CN106158714A - 用于操作对准晶片对的装置 - Google Patents
用于操作对准晶片对的装置 Download PDFInfo
- Publication number
- CN106158714A CN106158714A CN201610323805.9A CN201610323805A CN106158714A CN 106158714 A CN106158714 A CN 106158714A CN 201610323805 A CN201610323805 A CN 201610323805A CN 106158714 A CN106158714 A CN 106158714A
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- Prior art keywords
- wafer
- floating carrier
- end effector
- framing component
- pin
- Prior art date
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- Granted
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Classifications
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Abstract
本发明公开了一种用于精确地操作对准与对中半导体晶片对以便晶片到晶片对准与结合应用的工业规模装置与系统。其包括末端执行器,此末端执行器具有框架构件以及连接到框架构件的浮动载体,使得其间形成间隙,其中浮动载体具有半圆形内周。对中的半导体晶片对在机械臂控制下利用末端执行器可定位在处理系统内。对中的半导体晶片对在结合装置中不存在末端执行器的情况下结合在一起。
Description
技术领域
本公开涉及用于操作对准晶片对的装置并且尤其涉及末端执行器(endeffector),此末端执行器构造为精确地承载对准的半导体晶片对以便适于晶片到晶片结合应用。
背景技术
在用于形成半导体装置的半导体处理应用的宽范围中布置晶片到晶片(W2W)结合。其中施加晶片到晶片结合的半导体处理应用的实例包括基板工程与集成电路的制造、微电机械系统(MEMS)的包装与封装以及纯微电子的多个处理层(3D集成)的堆叠。W2W结合涉及对准两个或更多个晶片的表面,将对准的晶片传送到晶片结合室中,使晶片表面达到接触并且在它们之间形成强的结合接口。全部处理的产生与如此制造的半导体装置的制造成本以及最终地包括这些装置的电子产品的成本极大地取决于晶片到晶片结合的质量。W2W结合的质量取决于晶片对准的准确性,在传送与结合处理过程中晶片对准的保持,以及跨晶片结合接口的结合强度的均匀性与整体性。此外,在晶片的传送、定位、对中与对准过程中需要极端小心以便避免晶片的破裂、表面损坏、或扭曲。
图1A描述了根据现有技术的用于将对准的晶片从对准器传送到结合件的传统传送固件的示意图。传统上,如图1A中所示,晶片对18在对准站50中对准并且对准晶片对18固定在传送固件24上。传送固件24将对准晶片对18承载到结合站60以及到任何其它处理站。在2011年5月24日公布并且标题为“用于半导体结合的装置与方法”的美国专利No.7,948,034中描述了现有技术传送固件24,其内容通过引用明确地包含于此。
图2A描述了根据现有技术的图1A的并且相对于图3中所述的传统传送固件;并且图2B示出了根据现有技术的图2A的传统传送固件的夹紧组件的放大图。图3是根据现有技术,利用传统传送固件将对准的晶片对加载到结合室中的示意性描述。首先参照图3,传统传送固件24的尺寸设计为保持对准晶片对(未示出)并且传送装置16用于将传送固件24与对准晶片对移动到结合室12之内与之外。在一个实例中,传送装置16是自动或另外地手动操作的传送臂或滑动件。
如图2A中所示,传送固件24是通常由钛构造的圆形形状的环280,并且包括三个突出部280a、280b、280c,此三个突出部围绕用作用于基部晶片的支撑点的圆形环280对称地间隔。邻近三个突出部280a、280b、280c中的每个是以120度分离对称地布置在圆形环的周边的三个间隔件与夹紧组件282a、282b、282c。每个间隔件与夹紧组件282a、282b、282c都包括间隔件284与夹紧件286。间隔件284构造为以预定间距设定两个晶片。具有不同厚度的间隔件可以选择为在两个晶片之间设置不同的间距。一旦将间隔件插入在晶片之间,夹紧件286就向下夹紧以锁定两个晶片的位置。夹紧件286可以是向下移动以便与上晶片接触以将其保持在传送固件24上的适当位置中的单个结构或者连接件。每个间隔件284与每个夹紧件286都分别地通过线性致动器283与285独立地致动。
对于结合处理来说,两个对准晶片布置在载体固件24中并且通过间隔件284隔开并且然后通过夹紧件286向下夹紧。具有夹紧晶片的固件被插入到结合室12中并且然后每个夹紧件286都一次松开一个,并且将间隔件284移除。一旦移除全部间隔件284并且两个晶片通过气动控制中心销钉堆叠在一起。然后,施加力柱以方便贯穿高温结合处理在结合装置12中的结合处理。
在此工业内,已知的是传送固件24可能是重的并且对于传送装置16或机械臂操作来说具有挑战性。此外,一旦它们定位在结合装置12内,传送固件24贯穿结合处理的持续期间保持在结合装置12中,由此使传送固件24受到高达550℃温度以及可以在结合装置12内使用的室气体和/或压力的结合环境。特别地,传送固件24可以定位为小时或者更多在仅几毫米远离结合装置12的加热卡盘的外周的位置中使得传送固件24变得非常热。这些情形将显著数量的应力布置在传送固件24上,并且尤其在间隔件284与夹紧件286的复杂结构上。因此,随着时间经过,传送固件24变得不可靠并且要求包括结构的敏感性调节的显著服务,这具有高的成本并且耗费大量时间。
在其它实施中,对准的晶片对临时地结合并且临时结合的晶片对被传送到结合站与任何其它处理站中。在处理过程中晶片的临时结合可以用于使对准偏移误差最小化。临时晶片结合技术包括使晶片的中心或边缘与激光束结合,使晶片的中心或边缘与临时粘性粘结剂结合以及经由混合融合结合晶片的中心或边缘。然后通过传送固件或类似传统的传送装置将结合的晶片对传送到结合装置。激光结合技术要求至少一个激光透明晶片并且粘结结合技术可能促使晶片表面的污染。
发明内容
因此,根据上述缺陷与不足,理想的是提供工业规模装置以便精确地操作对准与对中半导体晶片对以便具有高吞吐量的晶片到晶片结合应用以及在不引入任何污染物的情况下操作全部类型晶片的能力。
本公开的实施方式提供了用于末端执行器的系统和用于操作晶片的末端执行器装置。简要地说,在结构上,系统的一个实施方式尤其可以如下实施。末端执行器装置具有框架构件以及连接到框架构件的其间具有间隙的浮动载体,其中浮动载体具有半圆形内周。多个真空垫连接到浮动载体,其中多个真空垫中的每个都从浮动载体的半圆形内周向内地延伸。
本公开还可以视为提供用于将对准晶片对布置在处理设备中的系统。简要地说,在结构上,系统的一个实施方式尤其可以如下实施。末端执行器具有框架构件与用于承载间隔对准的晶片的浮动载体,其中浮动载体可移动地连接到框架构件。机械臂连接到末端执行器。处理装置具有处理室,其中框架构件与浮动载体定位在处理室内,并且其中浮动载体与框架构件脱离联接。
本公开还可以视为提供用于将对准晶片对布置在处理设备中的系统。简要地说,在结构上,系统的一个实施方式尤其可以如下实施。末端执行器具有框架构件与浮动载体,其中此浮动载体可移动地连接到框架构件,并且其中多个夹紧间隔件组件连接到框架构件与浮动载体的至少一个以便承载间隔对准的晶片。机械臂连接到末端执行器。结合装置具有结合室,其中框架构件与浮动载体在结合处理以前定位在结合室内并且在结合处理过程中从结合室移除。
当检验下面的附图与详细描述时本公开的其它系统、特征、与优点对于本领域的技术人员来说将会是或者成为显而易见的。期望的是,包括在本说明书内的全部此其它系统方法、特征、与优点都在本公开的范围内,并且由所附权利要求保护。
附图说明
参照下面的附图可以更好地理解本公开的多个方面。附图不是必要地按照比例,重点替代的是放在清楚地示出本公开的原理。此外,在附图中,贯穿几个附图相同的附图标记表示相应的部件。
图1A描述了根据现有技术的用于将对准的晶片从对准器传送到结合件的传统传送固件的示意图;
图1B描述了根据本公开的第一示例性实施方式的用于将对准的晶片从对准器传送到结合装置的传送装置与方法的示意图;
图2A描述了根据现有技术的图1A的并且如图3中所示的传统传送固件;
图2B描述了根据现有技术的图2A的传统传送固件的夹紧组件的放大图;
图3是根据现有技术利用传统传送固件将对准的晶片对加载到结合室中的示意性描述。
图4描述了根据本公开的第一示例性实施方式的用于将对准晶片传送到处理室之内和之外的末端执行器;
图5描述了根据本公开的第一示例性实施方式的保持一对对准晶片的图4的末端执行器的俯视图;
图6描述了根据本公开的第一示例性实施方式的保持一对对准晶片的图4的末端执行器的仰视图;
图7描述了根据本公开的第一示例性实施方式的保持一对对准晶片的图4的末端执行器的部分透明的仰视图;
图8A描述了根据本公开的第一示例性实施方式的保持一对对准晶片的图4的末端执行器的一部分的截面图;
图8B描述了根据本公开的第一示例性实施方式的保持一对对准晶片的图4的末端执行器的截面图;
图8C描述了根据本公开的第一示例性实施方式的保持一对对准晶片的图4的末端执行器的截面图;
图8D描述了根据本公开的第一示例性实施方式的定位在储存站上的图4的末端执行器的截面图;
图9描述了根据本公开的第一示例性实施方式的具有用于保持具有不同尺寸的晶片的可调节真空垫的末端执行器的仰视图;
图10A-图10B描述了根据本公开的第一示例性实施方式的用于机械臂的末端执行器;
图11A-图11H示意性描述了根据本公开的示例性实施方式从具有图4的末端执行器的对准器卸载对准晶片对的步骤;
图12是根据本公开的第一示例性实施方式的晶片对准器的示意图;
图13A-图13I示意性描述了根据本公开的第一示例性实施方式将对准晶片对加载到具有图4的末端执行器的结合件中的步骤;
图14描述了根据本公开的第一示例性实施方式将对准晶片对加载到具有图4的末端执行器的结合件中;
图15A描述了根据本公开的第一示例性实施方式经由单个中心销钉销定两个晶片的示意图;
图15B描述了根据本公开的第一示例性实施方式经由中心销钉和偏心防旋转销钉销定两个晶片的示意图;
图15C描述了根据本公开的第一示例性实施方式经由三个周向销钉销定两个晶片的示意图;
图16是根据本公开的第一示例性实施方式的示例性晶片结合件的示意图;
图17是根据本公开的第一示例性实施方式用于晶片结合件的示例性结合件间隔片机构的示意图;
图18A-图18B是根据本公开的第一示例性实施方式的销钉的一个实例的示意图;以及
图19是根据本公开的第一示例性实施方式的示出将对准晶片布置在结合装置中的方法的流程图。
具体实施方式
本公开提供了用于操作精确对准与对中的半导体晶片对以便具有高吞吐量的晶片到晶片对准与结合应用的工业规模的装置。此装置包括在机械臂的端部处附接的末端执行器。末端执行器构造为在不改变晶片到晶片对准的情况下并且在不引入任何污染物的情况下,将对准的晶片对保持、移动与布置在多个处理站之内与之外。
图1B描述了根据本公开的第一示例性实施方式用于将对准晶片20、30从对准器传送到结合装置的传送装置与方法的示意图。如图1B中所示,末端执行器100附接到机械臂80并且构造为移动到对准装置300与具有结合装置的单独结合站400之中与之外。一对两个晶片20、30通过末端执行器100承载到对准装置300中,其中两个晶片20、30相对于彼此对准并且它们的对准通过末端执行器100固定。接着,机械臂80将具有对准晶片对20、30的末端执行器100移动到对准装置300外部并且移动到其中两个对准晶片20、30可以结合的结合站400中。末端执行器100能够将两个对准晶片20、30布置在结合装置中,并且然后在结合处理的持续过程中机械臂80将其从结合装置移除。一旦完成结合处理,机械臂80就使端部相应器100向回移动到结合装置中以收集结合晶片对20、30,其当从结合站400移除它时由末端执行器100支撑。在一些实施方式中,对准装置300与结合站400集成在相同的反应器中。
图4描述了根据本公开的第一示例性实施方式的用于将对准晶片传送到处理室之中与之外的末端执行器100。末端执行器100可以包括Y形固定框架110与布置在框架110的顶部上的浮动载体120。在一个实例中,框架110具有半圆形内周110a,其具有与晶片20、30的半径大致匹配的半径。在其它实例中,框架110具有Y形或叉形内周。类似地,载体120具有半圆形内周120a,其具有与晶片20、30的半径大致匹配的半径。根据本公开,浮动载体120的半圆形内周120a可以理解为形成部分环结构,其具有在完成环例如360°以前终止的端部。如图4中所示,可以由具有部分环形状的浮动载体120形成半圆形内周120a的结构,此部分环形状包括大致180°旋转,或者在其它设计中部分环形状可以高达270°。浮动载体120的其它部分环构造也认为在本公开的范围内。
浮动载体120可以由平行于框架110的平面定向并且与其隔开定位的大致平面结构形成。浮动载体120可以包括朝向所述半圆形内周120a的中心轴线119向内地突出的多个真空垫,诸如三个真空垫122a、122b、122c。此三个真空垫122a、122b、122c可以分别地定位在内周120a的三个或更多个位置111a、111b、111c处。如图5中描述的,真空垫122a、122b与122c可以用于保持顶部晶片20的边缘。
图5描述了根据本公开的第一示例性实施方式的保持一对对准晶片20、30的图4的末端执行器100的俯视图。图6描述了根据本公开的第一示例性实施方式的保持一对对准晶片20、30的图4的末端执行器100的仰视图。参照图4-图6,应该指出的是末端执行器100可以理解为具有定位在其顶侧上的浮动载体120,同时框架构件110定位在其底侧上。与例如如相对于图2A-图2C说明的将对准晶片对的两个晶片承载在其顶部表面上的传统传送装置不同,末端执行器100可以承载框架构件110的臂的内部并且在浮动载体120的延伸唇部下方位置处的晶片20、30。此设计允许将晶片20、30的边缘在围绕框架构件110与浮动载体120的内周110a、120a的多个位置中保持在固定框架110与浮动载体120之间,诸如如图5和图6中所示分别经由三个夹紧件/间隔件组件130a、130b和130c在三个位置111a、111b、111c中。特别地,如图5中所示,顶部晶片20可以通过真空垫122a、122b和122c抵靠定位并且保持在浮动载体120的底侧上,同时可以通过机械夹紧件132a、132b、和132c保持底部晶片30。
图7描述了根据本公开的第一示例性实施方式的保持一对对准晶片的图4的末端执行器的部分透明的仰视图。图8A描述了根据本公开的第一示例性实施方式的保持一对对准晶片的图4的末端执行器的一部分的截面图。参照图4-图8A,末端执行器100还可以包括多个组件以围绕框架构件110的内周110a保持和/或隔开晶片,诸如组件130a、130b和130c。组件130a、130b和130c可以定位在与真空垫122a、122b和122c的间隔定位大致匹配的间隔位置中。组件130a、130b、和130c中的每个都可以分别地包括载体间隔片136a、136b和136c、机械夹紧件132a、132b、和132c以及限制部件134a、134b和134c。
限制部件134a、134b、134c可以将浮动载体120与固定框架110松散地联接与保持在一起。如图8A中所示,在浮动载体120与限制部件134a、134b和134c的每个之间形成间隙121。间隙121有助于浮动载体120与固定框架110的振动隔离,这可以防止源于承载末端执行器100的机械臂的振动传送到浮动载体120以及此外允许浮动载体120以兼容方式位于顶部晶片到卡盘数据接口上,并且避免了任何粗糙或张紧的接触。浮动载体120构造为相对于固定框架110沿着图8a的方向90上下移动,通过限制部件134a、134b、和134c松散地引导。尽管限制部件134a、134b、134c可以具有不同的设计,但是在一个实例中,限制部件134a、134b、134c的下部可以螺纹地连接到框架构件110同时上部相对于浮动载体120是可移动的。例如,限制部件134a、134b、和134c的上部可以包括可定位在凹入腔体135a,例如图8a中的凹入腔体135a内的头部,这允许浮动载体120相对于框架构件110沿着方向90的限定移动,由此允许控制间隙121的最大尺寸。此外,限制部件134a、134b、和134c相对于凹入腔体的尺寸可以选择为提供少量的侧向间隙,使得可以相对于框架构件110略微横向地调节浮动载体120。
载体间隔片136a、136b、136c用于当它们末端执行器100容纳晶片20、30时使晶片20、30彼此间隔开。在一个实例中,载体间隔片136a、136b、136b可以由具有氮化钛涂层的不锈钢本体构造,但是还可以使用多种材料与涂层。载体间隔片136a、136b、136c可以在相应的三个位置111a、111b、111c处插入到晶片20的边缘下面,并且然后如图8A中所示,晶片30堆叠在间隔片136a、136b、136c下面。然后可以通过夹紧件132a、132b、132c将两个堆叠晶片20、30一起夹紧在相应的三个位置111a、111b、111c中。间隔片136a、136b、136c构造为沿着方向92水平地移动并且夹紧件132a、132b、132c构造为沿着线性滑动件,以枢轴运动,通过凸轮式运动,或者其组合移动,以接触底部晶片30。例如,在一个实例中,夹紧件132a、132b、132c可以围绕大致平行于半圆形内周120a的轴线的枢转轴旋转。
图7还示出了结合件间隔片138a、138b、138c,此结合件间隔片是结合装置使用的间隔片以便当它们布置在结合装置内时使两个堆叠的晶片20、30隔开。如可以看到的,结合件间隔片138a、138b、138c可以定位到末端执行器间隔片136a、136b、136c的相邻位置,其可以围绕浮动载体120的半圆形周大致等距地隔开。
在一些使用中,可能期望的是通过对中和/或锁定机构装配末端执行器100以使浮动载体120对中和/或锁定到框架构件110。图8B描述了根据本公开的第一示例性实施方式的保持一对对准晶片的图4的末端执行器的截面图。具体地说,图8B示出了利用移动锥形销钉105的对中机构104,这允许在各使用周期之间中使浮动载体120重新对中到框架110。通过电机或经由在固定载体110处在轴上的气动致动精确地引导与驱动销钉105。销钉105可以定位在框架构件110中的第一孔105a内并且与浮动载体120中的精确适配孔105b接合。销钉105可以用于再对中目的或者还可以在传送过程中使用以使浮动载体120限定到框架构件110。在其它设计中,销钉105可以是定位在框架构件110上的固定销钉,其当框架构件110与浮动载体120之间的距离非常小时,即小于销钉105自身的长度时,接合在浮动载体120中的精确适配孔105b,并且当浮动载体120向后移动到框架构件110上时重置。
图8B还示出了可以用于将框架构件110固定到浮动载体120的机械夹紧件106的使用。机械夹紧件106可以安装到固定载体110并且可以沿着竖直方向或旋转方向移动以使框架构件110接合到浮动载体120以将浮动载体120保持到框架构件110并且避免浮动载体120的位置改变。
图8C描述了根据本公开的第一示例性实施方式的保持一对对准晶片的图4的末端执行器的截面图。在图8C中,可以使用集成固定再指引销钉与真空凹槽以使框架构件110夹紧到浮动载体120。如示出的,框架构件110可以具有延伸到孔105b中的销钉106,浮动载体120与多个真空凹槽08定位在与浮动载体120对接的框架构件110的表面上。可以将负压施加到真空凹槽108以将浮动载体120偏压到框架构件110,同时销钉106用于使浮动载体120对中到框架构件110。
图8D描述了根据本公开的第一示例性实施方式的定位在储存站上的图4的末端执行器的截面图。如示出的,框架构件110与浮动载体120内的孔105a、105b可以在交接处理过程中与末端执行器100一起使用,诸如以在不同末端执行器100之间改变。具体地说,如相对于图10A描述的在其上承载机械臂的末端执行器100可以将末端执行器100定位在具有向外延伸的销钉88的储存站86附近。末端执行器100可以在储存站86的销钉88上方引导直到销钉88与孔105a、105b接合。一旦销钉88定位在孔105a、105b内,机械臂可以与末端执行器100断开连接,使末端执行器100保留在储存站86上的收藏位置中。当不使用时具有销钉88的储存站86可以提供末端执行器100的安全储存并且允许机械臂在不同末端执行器100之间快速地改变。
进一步指出的是当从结合装置移除末端执行器100时,可以利用定位在框架构件110上,或者在末端执行器100的另一部分上的集成热电偶监控末端执行器100的高温。在另一个设计中,储存站86可以装配有热电偶以便允许当收藏在储存站86中时热监控末端执行器100。此外,当将末端执行器100布置在储存站86中时,对其可能期望的是通过自然冷却或通过冷却装置冷却到较低温度。
图9描述了根据本公开的第一示例性实施方式的具有可调节以保持具有不同尺寸的晶片的真空垫122a、122b和122c的末端执行器100的仰视图。如示出的,真空垫122a、122b和122c可以可移动地连接到浮动载体120使得它们可以沿着半圆形内周120a例如沿着方向123a、123b径向地可调节,使得它们可以朝向半圆形内周120a的中心点更近与更远地移动。图9示出了破裂箱,其示出了在两个示例性位置中的真空垫122a、122b和122c的大体轮廓:一个其中它们更靠近朝向中心点定位以保持较小的晶片尺寸22b并且一个其中它们更远离中心点定位以保持较大的晶片尺寸22a。真空垫122a、122b和122c可以调节到不同程度以容纳多个不同尺寸的晶片。
图10A-图10B描述了根据本公开的第一示例性实施方式的用于机械臂80的末端执行器100。如示出的,末端执行器100可以可移除地附接到机械臂80(图10A中示意性示出)并且可以根据需要支撑的晶片的尺寸与数量与不同尺寸或不同形状的末端执行器互换。机械臂80可以定位在对准装置300附近以允许从对准装置300移除在末端执行器100上承载的晶片20、30。机械臂80还可以定位在结合装置(未示出)附近,使得可以利用在机械臂80的端部处的工具交换器84在处理单元之间传送晶片20、30。在一个实例中,工具交换器84可以是崇德型sws-011,但是还可以使用其它工具交换器。与传统传送固件相比,末端执行器100具有减小的重量,这显著地减小了机械臂负载。末端执行器100也无需围绕机械臂80的互换轴82翻转对准晶片对20、30,例如分别地切换顶部晶片20与底部晶片30的相对竖直位置,这导致较容易操作全部与下对准偏移风险。
可以利用相对于图4-图10B描述的末端执行器100,将晶片对20、30布置在对准装置300内的对准器中并且根据本技术领域中公知的方法与处理对准。一旦对准,末端执行器100便可以用于从对准器移除对准晶片对20、30。图11A-图11H示意性描述了根据本公开的第一示例性实施方式的从具有图4的末端执行器100的对准器卸载对准晶片对20、30的步骤的截面图。尽管附图中的每个都大体上仅示出了末端执行器100的单个组件130a,但是应该指出的是还可以通过包括末端执行器100的其它组件完成相同的功能,使得在相同时间或者在不同但预定的时间在末端执行器上的三个点或更多个点处发生相同或类似功能。
首先图11A描述了已经相对于彼此对准的晶片20和30并且保持与对准装置300的上晶片卡盘320与下晶片卡盘330接触。在对准装置300中,当承载下晶片卡盘330的下阶可竖直地移动时,即入在98处指示的沿着z方向可竖直地移动时,承载上晶片卡盘320的上阶被固定。晶片20、30已经沿着x方向,例如在图11B中的方向92,y方向(页面外部)对准,并且相对于彼此成角度使得晶片平行。晶片20、30分别地具有边缘20e、30e,并且边缘20e、30e从对准装置300的卡盘320和330的侧面突出。
如图11B中所示,末端执行器100达到沿着方向91接近对准装置300的卡盘320与330的侧面以开始卸载处理。示意性示出地,末端执行器100具有可以安装到机械臂(未示出)的框架构件110,同时浮动载体120沿着方向90相对于框架构件110是可移动的。为了容易描述,可以认为框架构件110是固定的,其中其相对于末端执行器100被附接到的机械臂的端部部分是固定的,同时浮动载体120被认为是可移动的,其中,其相对于末端执行器100被附接到的机械臂的端部部分是可移动的。限制部件134a连接到框架构件110并且定位在浮动载体120中的孔135a内,其中在限制部件134a与孔135a的侧壁之间间隔的间隙允许浮动载体120沿着方向92相对于框架构件110的略微横向移动。
在图11B中示出的开始状态中,末端执行器100以打开构造定位在对准装置300附近,使得多个夹紧与间隔装置收回。浮动载体120处于与固定载体110联接或接触的位置中。接着,如图11C中所示,浮动载体120与框架构件110脱离联接,同时末端执行器100沿着方向97b,z方向向下移动。使浮动载体120与框架构件110脱离联接在防止承载末端执行器100的机械臂中的小的振动被传送到对准装置300并且致使晶片20、30的不期望的移动以及致使它们变得不对准上可能是重要的。末端执行器100的移动可以仅为几毫米直到真空垫122a与晶片20的边缘20e的顶部表面接触,并且固定框架110与浮动载体120之间的距离增加使得载体间隔片136a、136b、136c在晶片20的边缘20e的底部表面下方。在此位置中,选择性地,真空垫122a可以被致动以将浮动载体120有效地连接或锁定到顶部晶片20。
接着,在图11D中,间隔片136a沿着方向92、x方向水平地移动,使得其定位在晶片20的边缘20e的下表面与晶片30的边缘30e的上表面之间。间隔片136a、136b、136c沿着z方向是柔性的使得它们可以符合晶片20e和30e的表面。而不在表面上施加任何显著作用力。接着,如图11E中所示,下晶片卡盘330沿着方向96a向上移动直到晶片30的边缘30e的顶部表面接触间隔片136a的下表面,这在晶片20、30之间形成间隙。接着,如图11F中所示,夹紧件132a移动为与晶片30的边缘30e的底部表面接触并且分别地夹紧晶片20、30的边缘20e、30e连同它们之间插入的间隔片136a。在此位置处,与其间的间隔片136a一起锁定晶片20、30,其全部都通过末端执行器100保持。为了从对准设备300释放晶片对20、30,可以清除上晶片卡盘320并且然后下晶片卡盘330沿着z轴沿着方向96b向下移动到中间位置,由此在顶部晶片20与上晶片卡盘320之间形成间隔距离。然后,如图11H中所示,下晶片卡盘330的真空被释放并且沿着z方向进一步向下移动直到对准的晶片对20、30通过末端执行器100完全地保持在边缘20e、30e处,并且准备传送到对准装置300的外部。
图12是根据本公开的第一示例性实施方式的晶片对准装置300的示意图。晶片对准装置300可以用作其中使用图11A-图11H的处理的对准器的实例。如图12中所示,对准装置300还可以包括具有气动Z轴的间隔片托架360、静态支撑桥365、支撑框架390、顶部基板卡盘320、底部基板卡盘330与WEC间隔片机构380,其同样在标题为“用于半导体晶片对准的装置与方法”的美国专利8,139,219中描述,其是共有的并且其内容通过引用明确地包含于此。
图13A-图13H示意性描述了根据本公开的第一示例性实施方式的通过图4的末端执行器将对准晶片对加载到结合件中的步骤的截面图。处理站中的一个其中对准晶片20、30可以通过机械臂80传送与加载并且末端执行器100是结合件400。图13A示出了在将晶片布置在结合件室410内以前处于闲置状态的结合件400。结合件400包括定位在结合件室410下方与上方的底部卡盘430与顶部卡盘420,其中全部都能够保持加热状态以结合晶片。顶部卡盘420与底部卡盘430中的一个或两个可以沿着z轴竖直地移动。在多个结合件400设计中,卡盘中的仅一个将可移动同时其它将保持静止。结合件间隔件138包括在结合件400中并且可以附接到结合件400的下级,使得结合件间隔片138a随着底部卡盘430竖直地移动,由此保持到底部卡盘430的恒定相对位置。尽管出于公开清楚的目的附图中的每个通常地仅示出了单个结合件间隔片138a,应该指出的是,可以在间隔件400中使用三个或更多个间隔片138a、138b、138c(图7)使得在同时或者在不同但预定的时间在结合件中的三个或更多个点处发生相同或类似功能。
使用末端执行器100的结合处理基本上与利用传统传送固件的结合处理不同。传统的传送固件将对准的晶片传送到结合装置中并且贯穿结合处理的持续期间必须保持在结合装置中。相比之下此主题公开的末端执行器100允许将对准的晶片传送到结合装置中并且然后在结合处理以前从结合室移除。相应地,如与传统传统固件受到的500℃温度与长时间的持续时间相比,末端执行器100可以仅在结合装置中受到短暂持续时间的闲置温度,例如大约300℃。因此,末端执行器100经受较少的机械与热应力并且需要较少维护,这用于增加效率与降低成本。
作为概述,部分地由于插入在晶片之间的结合件间隔片138a的使用实现了根据本公开的结合,由此允许移除末端执行器间隔片136a、136b、和136c,并且全部末端执行器100被从结合室移除。然后通过销钉455a、455b和455c销定对准与间隔的晶片并且然后将结合力施加在销定晶片20、30上。一旦完成结合,就可以利用末端执行器100从结合装置移除结合晶片。
相对于图13B-图13H提供了用于通过末端执行器100将晶片20、30的对准对加载在结合件400中的处理的其它细节。首先参照图13B,对准与夹紧晶片20和30由末端执行器100承载并且插入到结合件室410中。在此结合件构造中,顶部卡盘420固定并且底部卡盘430经由z驱动450沿着方向425是可移动的,但是应该指出的是结合件400可以具有可移动与固定卡盘的任意构造。如前所述,如图13B中所示,末端执行器通过夹紧组件130a、130b、和130c保持晶片20、30的边缘20e、30e并且沿着方向99将晶片20、30插入到结合件室410中,使得边缘20e、30e从结合件400的加载侧突出。在此起始状态中,浮动载体120与框架构件110接触并且晶片边缘20e、30e夹紧在一起。
接着,如图13C中所示,具有夹紧晶片20、30的浮动载体120从框架构件110脱离联接使得其沿着方向90b向下移动并且晶片20、30布置在底部卡盘430上,使得晶片30的底部表面与底部卡盘430的顶部表面接触。在多个另选的一个中,具有夹紧晶片20、30的浮动载体120可以沿着方向90a向上移动并且晶片20、30布置在顶部卡盘420的底部表面上,使得晶片20的顶部表面与顶部卡盘420的底部表面接触。如示出的,底部卡盘430可以沿着底部卡盘430的周边的部分具有一个或多个切口432,这可以允许足够间隙以便末端执行器100将晶片20、30布置在结合件400内,例如,因此晶片20、30的外边缘可以与顶部卡盘420与底部卡盘430的周边大致对准。接着,如图13D中所示,尽管末端执行器间隔片136a保持在晶片20、30之间的位置中,一个或多个销钉455a达到在一个或多个位置中与晶片20的顶部表面接触。
在此工业内,期望的是尽可能有效地结合晶片以增加产量。用于增加结合晶片对的产量的的一种技术是即使当未主动地结合晶片时也能保持结合件400中的高温,由此减少了结合件400在每个周期达到操作温度所需的时间。然而,将对准的晶片布置在已经加热的结合件400内,例如在400℃的规格上,可能影响晶片20、30的对准。例如,使晶片20、30受到此类型加热环境可以导致晶片20、30径向地膨胀,因此理想的是将晶片20、30快速地销定在一起以及尽可能地准确。尽管晶片20、30可以销定在不同位置处,但是可能优选的是在其中心点处而不是沿着径向边缘将晶片20、30销定在一起,由此防止其中晶片20、30从偏移点的热膨胀致使错误对准的情形。在图13D-图13F中,销钉455a示出为定位在晶片20、30的中心处,但是如相对于图15A-图15C说明的销钉455a的数量与这些销钉的位置可以改变。
然后,如图13E中所示,尽管通过一个或多个销钉455a保持晶片20、30,但是将定位在晶片20、30的边缘部分附近的结合件间隔片138a中的一个或多个沿着方向411b插入晶片20、30之间。结合件间隔片138a可以比末端执行器间隔片136a薄,并且由此可以将它们插入在夹紧在末端执行器间隔片136a周围的晶片20、30之间。在一个实例中,结合件间隔片138a可以是大约100微米然而末端执行器间隔片136a可以大约是200微米。
接着,如图13F中所示,夹紧件132a、132b、132c释放并且它们与晶片30的下表面的边缘30e脱离接合。应该指出的是可以根据预定例程,诸如整体、顺序地、或者其组合移除此夹紧件。如图13G中所示,在释放夹紧件132a、132b和132c以后,末端执行器间隔片136a被沿着方向92b从两个晶片20、30之间的空间移除。三个或更多个结合件间隔片138a围绕晶片20、30的周边在晶片20、30之间保持在适当位置中。通常地,如图9中所示,结合件间隔片138a将沿着晶片20、30的周边靠近末端执行器间隔片136a的位置定位。如图13G-图13H中所示,由于附近的结合件间隔片保持在晶片20、30之间,因此在移除末端执行器间隔片136a以后,在晶片20、30之间仍可能存在间隔间隙。
最终,如图13H中所示,末端执行器100沿着方向97a向上移动直到真空垫122a、122b、122c从晶片20的边缘20e的顶部表面脱离接合,以将销定的晶片20、30留下在底部卡盘430的顶部上。如图13I中所示,在此阶段处,末端执行器100被从结合件400完全地移除,并且晶片结合可以开始。在晶片结合过程的初始阶段中,晶片20、30在结合件间隔片138a周围结合在一起。在施加力以前,将结合件间隔片138a移除。在完成结合过程以后,通过末端执行器100将结合晶片对20、30从结合件400移除。
图14描述了根据本公开的第一示例性实施方式的定位为容纳图4的末端执行器的结合件。具体地说,图14的结合件400可以具有不同设计的固定与可移动部分。在图13A-图13H中,结合件400设计为使得上卡盘420固定并且下卡盘430沿着z轴是可移动的。在图14中示出的结合件400的设计中,下卡盘430固定并且上卡盘420沿着方向426移动,直到上卡盘420的底部表面与顶部晶片的顶部表面接触。在结合件400的顶部和/或底部卡盘420、430的移动上的全部变型都可以用于本公开的装置、系统、与方法。
图15A-图15C示出了在结合件中使用的销钉的变型。图15A描述了根据本公开的第一示例性实施方式经由单个中心销钉销定两个晶片的示意图。图15B描述了根据本公开的第一示例性实施方式经由中心销钉和偏心防旋转销钉销定两个晶片的示意图。图15C描述了根据本公开的第一示例性实施方式的经由三个周向销钉销定两个晶片的示意图。一起参照图15A-图15C,销钉455a、455b、455c中的一个或多个可以在一个或多个不同位置处达到与晶片20的顶部表面接触。如图15A中所示,可能优选的是使用定位在晶片20、30的中心中的单个销钉455a。在中心使用单个销钉455a可以允许晶片20、30在不经受错误对准的情况下热膨胀。
如图15B中所示,在一个另选中,可以通过两个销钉455a、455b销定晶片20、30。这里,销钉455a是中心销钉并且销钉455b是防旋转销钉,使得销钉455b防止晶片20、30的旋转。在此设计中,与防旋转销钉455b相比,中心销钉455a可以将更大的销定力施加到晶片20、30。此外,偏心销钉455b可以径向地顺从,其中它可以是沿着晶片20、30的半径移动以适应晶片的热膨胀。在图15C中示出的另一个另选中,可以使用三个销钉455a、455b、455c,其中它们布置在晶片20、30的周边,诸如在结合件间隔片138a的每个附近。它们可以围绕晶片20、30周边大致等距地隔开,诸如彼此隔开120度。还可能的是使用这些构造或者未清晰示出的其它销钉构造的组合。例如,可能期望的是将图15A的中心销钉与图15C的三个周边销钉一起使用。
图16是根据本公开的第一示例性实施方式的示例性晶片结合件的示意图。如图16中所示,结合件400还包括具有隔膜力与电机定位的压力头460、具有压力板与上销钉455的结合头470、结合件间隔片机构480、具有夹置板与清除特征件的下加热器490以及静态Z轴支撑柱495。在标题为“用于半导体结合的装置与方法”的美国专利7,948,034中描述了结合件400的这些与其它部件,其是共有的并且其内容通过引用的方式明确地包含于此。
图17是根据本公开的第一示例性实施方式的用于晶片结合件400的示例性结合件间隔片机构480的示意图。参照图16-17,结合件间隔片机构480可以用于在对准晶片对之间在插入与收回位置之间移动结合件间隔片138a、138b、138c(在图7中示出)。在一个实例中,结合件间隔片机构480可以具有气动活塞482,此气动活塞安装到定位在z轴柱495周围并且在下加热器490下面的环484。此气动活塞482承载支撑结合件间隔片138a的支架486。当致动气动活塞482时,其沿着径向方向朝向结合区域的中心与远离结合区域的中心是可移动的。可以通过支架486在上面可滑动的轨道488引导结合件间隔片138a的移动。这些结构可以允许结合件间隔片138a具有径向顺从,由此当晶片经受热膨胀时允许结合件间隔片138a随着晶片20、30沿着径向方向移动。还可以使用超过气动控制的装置的其它机械与电机械装置以移动结合件间隔片138a。
传统结合装置已经使用了一个或多个销钉来压紧晶片,但是这些装置提供对此销钉限定的力控制。在一个实例中,传统销钉具有通过仅可以施加恒定压力到晶片的压缩弹簧或类似装置形成的单个力。因此,当顶部与底部卡盘压紧晶片时,与销钉对准的晶片的区域使得与通过卡盘接触的晶片的区域相比将较小的压力施加到它,这致使在与销钉接触的晶片的部分处的机械高产生损失。与此同时,传统销钉的低热传导性在与销钉对准的晶片的部分处致使热量高产生损失。当这些问题与传统销钉具有较大直径与大的周围间隙,通常地大约12mm-14mm的事实结合时,机械与热高产生损失加起来在晶片结合中是显著无效率的。
为克服这些问题,主题公开考虑减小机械产生损失与热产生损失的销钉455a。为此目的,图18A-图18B是根据本公开的第一示例性实施方式的销钉455a的一个实例的示意图。如示出的,销钉455a可以延伸通过结合装置的顶部卡盘420使得其可以移动到结合件室410区域中,其中此晶片(未示出)将定位用于结合。在一个实例中,销钉455a可以是5mm直径并且定位在顶部卡盘420内的6mm孔内以便提供销钉455a到顶部卡盘420大约0.50mm的间隙。与具有销钉与大致12mm-14mm的间隙直径的现有技术销钉相比,此销钉455a具有6mm直径,使得间隙可以极大地改善机械高产生损失。此外,与利用压紧弹簧以提供机械力的传统销钉不同,销钉455a可以利用气动致动器来控制销钉455a在晶片上的力。因此,由销钉455a施加的压力可以选择为大致与卡盘的压力匹配,由此进一步减少机械产生损失。
销钉455a可以由钛、诸如氮化硅陶瓷的陶瓷、或者其它材料构造,并且可以包括中心销钉502,其由沿着销钉455a的底部定位的下管或衬套504以及具有薄壁并且沿着销钉455a的上部定位的上管或衬套505围绕。下衬套504与上衬套505可以诸如通过焊接或另一种技术在中心销钉502附近的接合部处连接在一起。中心销钉502可以包括平坦的销钉尖端506。如参照图18B进一步描述的,通过围绕卡盘420和/或与定位在卡盘420上方的加热器526对接的加热器销钉532可以主动地加热上衬套505,并且还可以通过围绕卡盘420加热中心销钉502。此外,能够通过与销钉455a的结构对接的电阻加热元件加热销钉455a的部件。在一些设计中,来自卡盘420的被动加热与来自电阻元件加热的主动加热可以用于加热销钉455a的多个部件。
销钉455a在尖端附近可以是径向地顺从的,使得其以+/-0.5mm预先加载到中心,使得顶部中心定位为允许销定尖端506。当致动时预先加载销钉455a允许销钉455a具有自然、对中位置但是一旦在力下还允许销钉455a径向地顺从。因此,销钉455a可以保持将正交力施加在晶片上。
在图18B中详细地示出了销钉455a的其它结构。销钉455a大致居中地定位在具有也称作为聚醚醚酮套管的中心销钉套管512的中心壳体510内,其自身具有用于定位销钉455a的短的长度与直径比率514的套管适配。中心销钉套管512提供销钉455a与结合件400的周围结构的电隔离,这对于其中可以使用显著高的电压以使晶片结合的阳极结合过程是重要的。室盖子516与钢力反作用板518还围绕中心销钉套管512定位。朝向中心销钉套管512的下端是到可以由硅或类似材料制造的中心径向顺从O形环520的低力预负载。O形环520允许中心销钉502与周围管504在结合件400内径向地移动。铝冷却凸缘522定位在力反作用板518下方,并且热隔离构件524定位在冷却凸缘522下方以使加热器526热隔离。
冷却凸缘522的内部是围绕中心销钉502的一部分的套管528。套管528与热隔离构件524可以由诸如在商标名称下销售的一个的锂铝硅酸盐微晶玻璃陶瓷或类似材料构造。套管528可以在用作覆盖特征件的任一侧上具有插入腔体530以便在真空中为低空气介质提供电绝缘。加热器销钉532定位在套管528下方并且在中心销钉502与管子504的下边缘周围。加热器销钉532可以由氮化硅形成并且可以与套管528的下插入腔体530接合。加热器销钉532还可以沿着加热器526与上卡盘420的至少一部分的厚度与中心销钉502和管子504对接。与加热器526对接的加热器销钉532的定位,以及用于构造加热器销钉532的材料可以允许从加热器526通过加热器销钉532并且到中心销钉502与管子504的高效的热传送。这可以允许中心销钉502与管子504具有与顶部卡盘420的温度大致匹配的温度,因为全部结构都定位为将来自加热器526的热量充分地传送到它们接触的晶片的部分。因此,可以显著地改进传统销钉经受的热产生损失。销钉455a的增加的热连接同时能够控制销钉455a施加的力可以改进先前通过现有技术实现的在晶片上的结合。
图19是示出根据本公开的第一示例性实施方式的将对准晶片布置在结合装置中的方法的流程图600。应该指出的是在流程图中的任何处理描述或块都应该理解为代表包括用于执行此处理中的特定逻辑功能的一个或多个指令的模块、段、代码的部分、或步骤,并且另选的实施包括在本公开的范围内,其中如本公开技术领域的数量技术人员将会理解的可以根据涉及的功能不按示出或说明的顺序,包括大致同时发生地或者以相反顺序执行功能。
如通过块602示出的,通过具有框架构件与可移动地连接到框架构件的浮动载体的末端执行器固定间隔对准的晶片。机械臂用于移动末端执行器,由此将晶片移动到结合件的结合室中(块604)。将晶片从末端执行器卸载(块606)。从结合室移除末端执行器(块608)。使晶片结合(块610)。此方法还可以包括相对于本公开的任意附图公开的步骤、处理或功能中的任一个。
应该强调的是本公开的上述实施方式,尤其是任何“优选”实施方式,仅仅是实施的可能的实例,仅仅是阐述以便清楚的理解本公开的原理。在实质上不偏离本公开的精神与原理的情况下可以对本公开的上述实施方式进行多种变型与修改。全部此修改与变型都旨在于此包括在本公开的范围与本公开内并且由下面权利要求保护。
Claims (29)
1.一种用于操作晶片的末端执行器装置,包括:
框架构件,
浮动载体,其连接到所述框架构件,使得其间形成间隙,其中所述浮动载体具有半圆形内周;以及
多个真空垫,其连接到所述浮动载体,其中所述多个真空垫的每个都从所述浮动载体的半圆形内周向内地延伸。
2.根据权利要求1所述的末端执行器装置,其中所述多个真空垫可移动地连接到所述浮动载体并且能够沿着所述半圆形内周径向地调节。
3.根据权利要求1所述的末端执行器装置,其中所述浮动载体可移动地连接到所述框架构件并且能够沿着所述半圆形内周的轴线调节,其中所述间隙的尺寸是可调节的。
4.根据权利要求3所述的末端执行器装置,其中多个限制部件将所述浮动载体松散地联接到所述框架构件。
5.根据权利要求1所述的末端执行器装置,还包括连接到所述框架构件与浮动载体中的至少一个的多个夹紧间隔件组件,所述夹紧间隔件组件中的每个都具有至少一个间隔片与至少一个机械夹紧件。
6.根据权利要求5所述的末端执行器装置,其中所述多个夹紧间隔件组件在所述浮动载体的半圆形内周上大致等距离地间隔开。
7.根据权利要求5所述的末端执行器装置,其中所述至少一个机械夹紧件定位在所述浮动载体的下表面下方。
8.根据权利要求1所述的末端执行器装置,还包括与所述框架构件与所述浮动载体可移除地接合的对中机构,其中所述对中机构防止所述浮动载体相对于所述框架构件的位置改变。
9.根据权利要求8所述的末端执行器装置,其中所述对中机构还包括可移除地接合在所述框架构件内的第一孔与所述浮动载体内的第二孔之间的销钉,其中所述销钉在所述第一孔与所述第二孔中的接合使所述浮动载体沿着所述浮动载体的半圆形内周的轴线的方向对准到所述框架构件。
10.根据权利要求8所述的末端执行器装置,其中所述对中机构还包括机械夹紧件。
11.根据权利要求8所述的末端执行器装置,其中所述对中机构还包括真空夹紧件。
12.根据权利要求1所述的末端执行器装置,其中在激光预结合处理过程中在激光预结合装置内使用所述末端执行器。
13.一种用于将对准的晶片对布置在处理装置中的系统,所述系统包括:
末端执行器,其具有框架构件与用于承载以间隔对准的晶片的浮动载体,其中所述浮动载体可移动地连接到所述框架构件;
机械臂,其连接到所述末端执行器;以及
处理装置,其具有处理室,其中所述框架构件与浮动载体定位在所述处理室内,并且其中所述浮动载体与所述框架构件脱离联接。
14.根据权利要求13所述的系统,其中所述浮动载体具有半圆形内周。
15.根据权利要求14所述的系统,其中多个真空垫连接到所述浮动载体,其中所述多个真空垫中的每个都从所述浮动载体的半圆形内周向内地延伸。
16.根据权利要求15所述的系统,其中所述多个真空垫可移动地连接到所述浮动载体并且能够沿着所述半圆形内周径向地调节。
17.根据权利要求14所述的系统,其中所述浮动载体可移动地连接到所述框架构件并且能够沿着所述半圆形内周的轴线调节,其中在所述框架构件与所述浮动载体之间形成的间隙的尺寸是可调节的。
18.根据权利要求13所述的系统,其中多个限制部件将所述浮动载体松散地联接到所述框架构件。
19.根据权利要求13所述的系统,还包括连接到所述框架构件与浮动载体中的至少一个的多个夹紧间隔件组件,所述夹紧间隔件组件中的每个都具有至少一个间隔片与至少一个机械夹紧件。
20.根据权利要求19所述的系统,其中所述至少一个机械夹紧件定位在所述浮动载体的下表面下方。
21.根据权利要求13所述的系统,其中所述处理装置还包括具有上卡盘、下卡盘以及形成在其间的结合室的结合件,其中当定位在所述结合室内时所述框架构件与所述浮动载体脱离联接。
22.根据权利要求21所述的系统,其中所述结合件还包括定位在所述结合室附近的多个结合件间隔片,其中所述多个结合件间隔片能够插入到以间隔对准的所述晶片之间。
23.根据权利要求22所述的系统,其中所述多个结合件间隔片是可移动的,使得结合件间隔片机构定位在所述上卡盘与下卡盘中的至少一个附近。
24.根据权利要求21所述的系统,其中所述结合件还包括在所述结合室内能够与以间隔对准的所述晶片接合的压紧销钉,其中所述压紧销钉的压紧力是可调节的。
25.根据权利要求24所述的系统,其中所述压紧销钉具有小于6mm的直径。
26.根据权利要求24所述的系统,其中所述压紧销钉的压紧力能够通过气动控制装置调节。
27.根据权利要求24所述的系统,其中所述压紧销钉的压紧力与施加在所述上卡盘与下卡盘之间的压紧压力大致匹配。
28.根据权利要求24所述的系统,其中在结合处理过程中所述压紧销钉的温度与所述上卡盘与下卡盘中至少一个的温度大致匹配。
29.一种用于将对准的晶片对布置在处理装置中的系统,所述系统包括:
末端执行器,其具有框架构件与浮动载体,其中所述浮动载体可移动地连接到所述框架构件,并且其中多个夹紧间隔件组件连接到所述框架构件与所述浮动载体中的至少一个以承载以间隔对准的晶片;
机械臂,其连接到所述末端执行器;以及
结合装置,其具有结合室,其中所述框架构件与浮动载体在结合处理以前定位在所述结合室内并且在所述结合过程中从所述结合室移除。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109003932A (zh) * | 2017-06-06 | 2018-12-14 | 苏斯微技术光刻有限公司 | 用于处理对准的基板对的系统和相关技术 |
CN109256353A (zh) * | 2017-07-12 | 2019-01-22 | 家登精密工业股份有限公司 | 定位底座 |
CN109909870A (zh) * | 2017-12-13 | 2019-06-21 | 三星电子株式会社 | 制造半导体器件的方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10825705B2 (en) | 2015-05-15 | 2020-11-03 | Suss Microtec Lithography Gmbh | Apparatus, system, and method for handling aligned wafer pairs |
JP6700130B2 (ja) * | 2016-07-12 | 2020-05-27 | 東京エレクトロン株式会社 | 接合システム |
US9975255B1 (en) * | 2016-12-15 | 2018-05-22 | Jabil Inc. | Apparatus, system and method for providing a conformable vacuum cup for an end effector |
CN110581097B (zh) * | 2018-06-07 | 2024-03-29 | 佳宸科技有限公司 | 宽度可调式移动机构 |
CN110660723B (zh) * | 2018-06-29 | 2022-05-10 | 上海微电子装备(集团)股份有限公司 | 一种机械手、键合腔体、晶圆键合系统及键合方法 |
CN111211084A (zh) * | 2020-01-17 | 2020-05-29 | 长江存储科技有限责任公司 | 晶圆承载装置 |
CN111916384B (zh) * | 2020-08-17 | 2022-05-17 | 鑫天虹(厦门)科技有限公司 | 一种键合机对准模块和键合机 |
CN113921455A (zh) * | 2021-09-29 | 2022-01-11 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其晶圆支撑结构 |
US20230360940A1 (en) * | 2022-05-03 | 2023-11-09 | Applied Materials, Inc. | Wafer film frame carrier |
WO2024010711A1 (en) * | 2022-07-05 | 2024-01-11 | Lam Research Corporation | End effector |
CN115424958B (zh) * | 2022-09-16 | 2023-06-23 | 浙江嘉辰半导体有限公司 | 一种双面散热半导体封装结构及其工艺 |
CN117174643A (zh) * | 2023-10-07 | 2023-12-05 | 合肥开悦半导体科技有限公司 | 一种机械手臂 |
CN117049125B (zh) * | 2023-10-11 | 2023-12-26 | 合肥铠柏科技有限公司 | 一种可自适应样品架角度误差样品传输器 |
CN117174624B (zh) * | 2023-11-02 | 2024-04-12 | 迈为技术(珠海)有限公司 | 一种键合设备及键合方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5364222A (en) * | 1992-02-05 | 1994-11-15 | Tokyo Electron Limited | Apparatus for processing wafer-shaped substrates |
US5784797A (en) * | 1994-04-28 | 1998-07-28 | Semitool, Inc. | Carrierless centrifugal semiconductor processing system |
JP2006332590A (ja) * | 2005-05-27 | 2006-12-07 | Win Tech | 半導体ウエハ移送装置 |
CN101361177A (zh) * | 2006-08-11 | 2009-02-04 | 东京毅力科创株式会社 | 基板移载装置、基板处理装置、基板移载用臂、基板移载方法 |
CN101685769A (zh) * | 2008-09-24 | 2010-03-31 | 三星电子株式会社 | 晶片键合装置 |
JP5178495B2 (ja) * | 2008-12-22 | 2013-04-10 | 株式会社日立ハイテクノロジーズ | 試料搬送機構、及び試料搬送機構を備えた走査電子顕微鏡 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970003907B1 (ko) * | 1988-02-12 | 1997-03-22 | 도오교오 에레구토론 가부시끼 가이샤 | 기판처리 장치 및 기판처리 방법 |
JP3892494B2 (ja) | 1996-01-26 | 2007-03-14 | 東京エレクトロン株式会社 | 基板搬送装置 |
JP3722598B2 (ja) * | 1997-07-16 | 2005-11-30 | 株式会社ダイヘン | 2アーム方式の搬送用ロボット装置 |
JPH1167873A (ja) * | 1997-08-26 | 1999-03-09 | Hitachi Ltd | 半導体ウエハの処理方法および装置 |
JP2001225292A (ja) * | 2000-02-15 | 2001-08-21 | Sumitomo Heavy Ind Ltd | ワークグリップ機構 |
DE50102174D1 (de) * | 2000-03-03 | 2004-06-09 | Theo J J Zegers | Kopfhalterungsvorrichtung für chirurgische Zwecke |
AU2001286946A1 (en) * | 2000-09-01 | 2002-03-13 | Asyst Technologies, Inc. | Edge grip aligner with buffering capabilities |
DE10230373B3 (de) | 2002-07-05 | 2004-03-04 | Süss Microtec Lithography Gmbh | Vorrichtung und Verfahren zum Bonden eines Stapels aus drei oder mehr scheibenförmigen Substraten, insbesondere eines 3-Wafer-Stacks |
US20060120832A1 (en) * | 2004-11-08 | 2006-06-08 | Rajeshwar Chhibber | Method and apparatus for handling a substrate |
GB2425589A (en) * | 2005-04-30 | 2006-11-01 | Manh Han | Adjustable connection ring for photographic softbox or lighting umbrella |
JP4439464B2 (ja) * | 2005-12-06 | 2010-03-24 | 東京エレクトロン株式会社 | 基板搬送方法及び基板搬送装置 |
JP2007210079A (ja) * | 2006-02-10 | 2007-08-23 | Tokyo Seimitsu Co Ltd | ワーク搬送装置及びワーク搬送方法 |
US7948034B2 (en) | 2006-06-22 | 2011-05-24 | Suss Microtec Lithography, Gmbh | Apparatus and method for semiconductor bonding |
TWI533394B (zh) * | 2007-06-21 | 2016-05-11 | 尼康股份有限公司 | Conveying method and conveying device |
US8801865B2 (en) * | 2007-11-23 | 2014-08-12 | Lam Research Ag | Device and process for wet treating a peripheral area of a wafer-shaped article |
US8139219B2 (en) * | 2008-04-02 | 2012-03-20 | Suss Microtec Lithography, Gmbh | Apparatus and method for semiconductor wafer alignment |
US20100028109A1 (en) * | 2008-07-30 | 2010-02-04 | Fabworx Solutions, Inc. | Edge grip end effector |
JP5439583B2 (ja) * | 2009-04-16 | 2014-03-12 | スス マイクロテク リソグラフィー,ゲーエムベーハー | 一時的なウェハーボンディング及びデボンディングのための改善された装置 |
JP2011205004A (ja) * | 2010-03-26 | 2011-10-13 | Sokudo Co Ltd | 基板処理装置および基板処理方法 |
US8567837B2 (en) * | 2010-11-24 | 2013-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reconfigurable guide pin design for centering wafers having different sizes |
FR2972078A1 (fr) | 2011-02-24 | 2012-08-31 | Soitec Silicon On Insulator | Appareil et procédé de collage par adhésion moléculaire |
JP5490741B2 (ja) * | 2011-03-02 | 2014-05-14 | 東京エレクトロン株式会社 | 基板搬送装置の位置調整方法、及び基板処理装置 |
IL218981A (en) * | 2011-05-12 | 2015-10-29 | Semiconductor Tech & Instr Inc | System and method for using multi-component windshield holders in the appropriate configuration to handle and move windshield components |
US8985929B2 (en) * | 2011-09-22 | 2015-03-24 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and storage medium |
TWI523134B (zh) * | 2011-09-22 | 2016-02-21 | 東京威力科創股份有限公司 | 基板處理系統、基板搬運方法、及電腦記憶媒體 |
JP5582152B2 (ja) * | 2012-02-03 | 2014-09-03 | 東京エレクトロン株式会社 | 基板搬送装置、基板搬送方法及び記憶媒体 |
JP5673577B2 (ja) | 2012-02-07 | 2015-02-18 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
SG194239A1 (en) * | 2012-04-09 | 2013-11-29 | Semiconductor Tech & Instr Inc | End handler |
JP6001934B2 (ja) * | 2012-06-25 | 2016-10-05 | 東京応化工業株式会社 | 重ね合わせ装置および重ね合わせ方法 |
JP6118044B2 (ja) * | 2012-07-19 | 2017-04-19 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP5886821B2 (ja) * | 2013-01-04 | 2016-03-16 | ピーエスケー インコーポレイテッド | 基板処理装置及び方法 |
US9061423B2 (en) * | 2013-03-13 | 2015-06-23 | Varian Semiconductor Equipment Associates, Inc. | Wafer handling apparatus |
WO2014165406A1 (en) * | 2013-04-01 | 2014-10-09 | Brewer Science Inc. | Apparatus and method for thin wafer transfer |
JP6066149B2 (ja) | 2013-05-23 | 2017-01-25 | 株式会社ニコン | 基板保持方法及び装置、並びに露光方法及び装置 |
JP6190645B2 (ja) * | 2013-07-09 | 2017-08-30 | 東京エレクトロン株式会社 | 基板搬送方法 |
KR101416421B1 (ko) * | 2013-07-17 | 2014-07-09 | 현대자동차 주식회사 | 차량용 어시스트 핸들 |
CN110098138B (zh) * | 2013-09-25 | 2023-07-18 | Ev 集团 E·索尔纳有限责任公司 | 用于结合基板的装置及方法 |
CN105556654B (zh) | 2013-09-26 | 2019-07-26 | 应用材料公司 | 用于传送基板的气动终端受动器装置、基板传送系统与方法 |
US20150206783A1 (en) * | 2014-01-20 | 2015-07-23 | Suss Microtec Lithography, Gmbh | System amd method for substrate holding |
KR20160048301A (ko) * | 2014-10-23 | 2016-05-04 | 삼성전자주식회사 | 본딩 장치 및 그를 포함하는 기판 제조 설비 |
US10755960B2 (en) | 2014-11-04 | 2020-08-25 | Brooks Automation, Inc. | Wafer aligner |
JP6412786B2 (ja) * | 2014-12-03 | 2018-10-24 | 東京応化工業株式会社 | 搬送方法 |
FR3031046B1 (fr) * | 2014-12-24 | 2018-06-29 | Solystic | Installation pour la separation et l'individualisation d'objets postaux heterogenes |
US10825705B2 (en) * | 2015-05-15 | 2020-11-03 | Suss Microtec Lithography Gmbh | Apparatus, system, and method for handling aligned wafer pairs |
TWM513454U (zh) * | 2015-05-29 | 2015-12-01 | Episil Technologies Inc | 晶圓傳輸裝置 |
JP6574715B2 (ja) * | 2016-02-01 | 2019-09-11 | 東京エレクトロン株式会社 | 基板搬送方法及び基板処理システム |
KR101817209B1 (ko) * | 2016-06-24 | 2018-02-22 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
-
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- 2016-05-10 US US15/150,689 patent/US10825705B2/en active Active
- 2016-05-10 US US15/150,856 patent/US9640418B2/en active Active
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- 2016-05-13 AT ATA50443/2016A patent/AT517258B1/de active
- 2016-05-13 JP JP2016097183A patent/JP6785062B2/ja active Active
- 2016-05-13 JP JP2016097185A patent/JP6689668B2/ja active Active
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- 2016-05-16 CN CN201610323805.9A patent/CN106158714B/zh active Active
-
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- 2020-09-23 US US17/029,635 patent/US11651983B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5364222A (en) * | 1992-02-05 | 1994-11-15 | Tokyo Electron Limited | Apparatus for processing wafer-shaped substrates |
US5784797A (en) * | 1994-04-28 | 1998-07-28 | Semitool, Inc. | Carrierless centrifugal semiconductor processing system |
JP2006332590A (ja) * | 2005-05-27 | 2006-12-07 | Win Tech | 半導体ウエハ移送装置 |
CN101361177A (zh) * | 2006-08-11 | 2009-02-04 | 东京毅力科创株式会社 | 基板移载装置、基板处理装置、基板移载用臂、基板移载方法 |
CN101685769A (zh) * | 2008-09-24 | 2010-03-31 | 三星电子株式会社 | 晶片键合装置 |
JP5178495B2 (ja) * | 2008-12-22 | 2013-04-10 | 株式会社日立ハイテクノロジーズ | 試料搬送機構、及び試料搬送機構を備えた走査電子顕微鏡 |
Non-Patent Citations (3)
Title |
---|
JU YONG CHO;BONG JU WOO;WON KWEON JANG;: "Optical Module for Distinguishing Real and Fake Cracks in LCD and OLED Glass Boards", 《2013 INTERNATIONAL CONFERENCE ON MECHATRONICS,APPLIED MECHANICS AND ENERGY ENGINEERING(MAMEE 2013)》 * |
苏平等: "模块化组合设备的晶圆加工过程建模研究 ", 《中国机械工程》 * |
陈锦祥等: "整体式晶圆连续自动物料搬运系统性能分析 ", 《计算机集成制造系统》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109003932A (zh) * | 2017-06-06 | 2018-12-14 | 苏斯微技术光刻有限公司 | 用于处理对准的基板对的系统和相关技术 |
CN109003932B (zh) * | 2017-06-06 | 2023-10-31 | 苏斯微技术光刻有限公司 | 用于处理对准的基板对的系统和相关技术 |
CN109256353A (zh) * | 2017-07-12 | 2019-01-22 | 家登精密工业股份有限公司 | 定位底座 |
CN109909870A (zh) * | 2017-12-13 | 2019-06-21 | 三星电子株式会社 | 制造半导体器件的方法 |
CN109909870B (zh) * | 2017-12-13 | 2022-05-03 | 三星电子株式会社 | 制造半导体器件的方法 |
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US11651983B2 (en) | 2023-05-16 |
US10825705B2 (en) | 2020-11-03 |
TW201712793A (zh) | 2017-04-01 |
TWI718149B (zh) | 2021-02-11 |
AT517254A2 (de) | 2016-12-15 |
AT517258B1 (de) | 2020-01-15 |
US20210013079A1 (en) | 2021-01-14 |
DE102016108788B4 (de) | 2024-02-22 |
DE102016108788A1 (de) | 2016-11-17 |
JP6785062B2 (ja) | 2020-11-18 |
CN106158706A (zh) | 2016-11-23 |
KR20160134539A (ko) | 2016-11-23 |
AT517258A2 (de) | 2016-12-15 |
TWI706502B (zh) | 2020-10-01 |
DE102016108787B4 (de) | 2024-02-22 |
US20160336212A1 (en) | 2016-11-17 |
AT517254A3 (de) | 2018-09-15 |
KR20160134540A (ko) | 2016-11-23 |
KR102173844B1 (ko) | 2020-11-05 |
AT517258A3 (de) | 2018-09-15 |
JP2017022363A (ja) | 2017-01-26 |
JP6689668B2 (ja) | 2020-04-28 |
US9640418B2 (en) | 2017-05-02 |
CN106158706B (zh) | 2020-11-13 |
DE102016108787A1 (de) | 2016-11-17 |
TW201712789A (zh) | 2017-04-01 |
JP2017022364A (ja) | 2017-01-26 |
US20160336208A1 (en) | 2016-11-17 |
CN106158714B (zh) | 2020-12-11 |
KR102210304B1 (ko) | 2021-02-02 |
AT517254B1 (de) | 2020-01-15 |
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