TWI706455B - 晶圓之加工方法 - Google Patents
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Abstract
本發明係一種晶圓之加工方法,其課題為:即使自形成環狀補強部於外周側的晶圓,除去環狀補強部,亦適當地位置調整晶圓者。
其解決手段為自加以形成環狀補強部(71)於裝置範圍(A1)之周圍的晶圓(W),除去環狀補強部的晶圓之加工方法,其中,包含:藉由黏著膠帶(T)而使晶圓支持於框體(F)之步驟,和形成對應於缺口(N)之標記(M)於較環狀補強部與裝置範圍之邊界部(73)為內徑側之步驟,和將環狀補強部與裝置範圍的邊界部,與黏著膠帶同時切斷,分離裝置範圍與環狀補強部之步驟,和使環狀補強部,與框體同時自保持平台脫離,而除去環狀補強部之步驟。
Description
本發明係有關自晶圓除去形成於裝置範圍的周圍之環狀補強部之晶圓的加工方法。
形成IC、LSI等之複數的裝置之晶圓係經由切割裝置等,於各裝置,加以分割成各個之晶片,而分割後的晶片係加以組裝於各種電子機器而廣泛地被利用。為了謀求電子機器的小型化,輕量化等,晶圓的厚度則例如呈成為50μm~100μm地加以薄化形成。如此之晶圓係剛性降低,並且產生有彎曲之故而處理則變為困難。因此,提案有:僅研削對應於形成有晶圓的裝置之裝置範圍的背面側,於晶圓之外周,形成環狀補強部而提高晶圓剛性之方法(例如,參照專利文獻1)。
提案有:在將形成環狀補強部的晶圓,沿著分割預定線而進行分割之前,自晶圓除去環狀補強部之方法(例如,參照專利文獻2)。在專利文獻2所記載之方法中,貼著黏著膠帶於晶圓表面,藉由黏著膠帶而於環狀的框體內側,支持晶圓而加以一體化。在此狀態,晶圓之
裝置範圍與環狀補強部(外周剩餘範圍)之邊界部則與黏著膠帶同時,經由雷射加工而加以切斷之後,自晶圓分離之環狀補強部則與框體同時加以去除。
[專利文獻1]日本特開2007-019461號公報
[專利文獻2]日本特開2015-147231號公報
但在專利文獻2所記載之晶圓的加工方法中,當自晶圓除去環狀補強部時,形成於環狀補強部之位置調整用之缺口則消失之故,而有在後續的工程,進行位置調整之情況成為困難之問題。
本發明係有鑑於有關的點所作為之構成,其目的為提供:即使自形成環狀補強部於外周側之晶圓,除去環狀補強部,亦可適當地位置調整晶圓之晶圓的加工方法。
當經由本發明時,提供:於表面具有形成複數之裝置的裝置範圍,和圍繞該裝置範圍之外周剩餘範圍,於外周緣具有顯示結晶方位之缺口的同時,於背面加
以形成有對應於該裝置範圍之圓形凹部與對應於該外周剩餘範圍之環狀補強部之晶圓的加工方法,其中,具備:於具有收容晶圓之開口部的環狀框體之該開口部,收容晶圓,將該晶圓的表面,貼著於外周部則裝著於環狀框體之黏著膠帶,將該晶圓,藉由該黏著膠帶而由該環狀框體進行支持之晶圓支持步驟,和將支持於該環狀框體之晶圓,由保持平台進行保持,經由對於晶圓而言,照射具有吸收性之波長的雷射光線之時,將該環狀補強部與該裝置範圍之邊界部,與該黏著膠帶同時切斷,分離該裝置範圍與該環狀補強部之環狀補強部分離步驟,和在該環狀補強部分離步驟之前或後,於該環狀補強部與該裝置範圍之邊界部的內徑側,形成對應於缺口之標記的標記形成步驟,和實施該環狀補強部分離步驟及該標記形成步驟之後,藉由該黏著膠帶而使支持於該環狀框體之該環狀補強部,與該環狀框體同時,自該保持平台脫離,除去該環狀補強部之環狀補強部除去步驟之晶圓的加工方法。
如根據此構成,沿著裝置範圍與環狀補強部之邊界部,加以照射雷射光線,自晶圓的裝置範圍,加以分離環狀補強部。並且,由使分離後之環狀補強部,自保持平台脫離者,自晶圓,加以除去環狀補強部。此時,對應於環狀補強部之外周緣的缺口之標記則加以形成於較裝置範圍與環狀補強部之邊界部為內徑側之故,即使自晶圓加以除去環狀補強部,亦未有自晶圓,標記消失之情況。因而,在後續的工程中,取代於缺口而將標記作為基準,
而可適當地位置調整晶圓者。
理想係本發明之晶圓的加工方法係在該標記形成步驟之後,且於該環狀補強部分離步驟之前,更具備由檢出手段而檢出形成於晶圓上之該標記與該缺口的位置關係之位置關係檢出步驟。
如根據本發明,由將對應於環狀補強部之外周緣的缺口之標記,形成於較裝置範圍與環狀補強部之邊界部為內徑側者,即使自晶圓除去環狀補強部,亦可在後續的工程中,適當地位置調整晶圓。
1‧‧‧雷射加工裝置
30‧‧‧保持平台
71‧‧‧環狀補強部
72‧‧‧外周邊緣
73‧‧‧邊界部
A1‧‧‧裝置範圍
A2‧‧‧外周剩餘範圍
F‧‧‧框體
M‧‧‧標記
N‧‧‧缺口
T‧‧‧黏著膠帶
W‧‧‧晶圓
圖1係本實施形態之雷射加工裝置之斜視圖。
圖2係本實施形態之晶圓及保持平台之模式性剖面圖。
圖3係顯示晶圓支持步驟之一例的模式性剖面圖。
圖4係顯示標記形成步驟之一例的模式性剖面圖。
圖5係顯示環狀補強部分離步驟之一例的模式性剖面圖。
圖6係顯示環狀補強部除去步驟之一例的圖。
圖7係顯示位置關係檢出步驟之一例的圖。
以下,參照附加圖面,對於本發明之實施形態之晶圓的加工方法加以說明。圖1係使用於本實施形態之晶圓的加工方法之雷射加工裝置的斜視圖。然而,雷射加工裝置係如可在本實施形態之晶圓的加工方法使用即可,而未加以限定於圖1所示之構成。
如圖1所示,雷射加工裝置1係使照射雷射光線的雷射光線照射手段40與保持晶圓W之保持平台30相對移動,呈加工晶圓W地加以構成。晶圓W係經由配列於表面的格子狀之分割預定線(不圖示)而加以區劃成複數的範圍,對於區劃於分割預定線的各範圍係加以形成有裝置(不圖示)。晶圓W的表面係加以分為形成有複數之裝置的裝置範圍A1,和圍繞裝置範圍A1之外周剩餘範圍A2。另外,對於晶圓W之外周緣係加以形成有顯示結晶方位的缺口N(參照圖4B)。
晶圓W係加以形成研削裝置範圍A1的背面而形成圓形凹部,於外周剩餘範圍A2的背面形成凸狀之環狀補強部71。在本說明書中,有將此晶圓W稱作TAIKO晶圓者。僅將晶圓W之裝置範圍A1加以薄化之故,經由裝置範圍A1之周圍環狀補強部71而加以提高晶圓W之剛性。經由此,由環狀補強部71補足晶圓W之裝置範圍A1產生薄化而不足之剛性者,抑制晶圓W之彎曲而防止搬送時等之破損。然而,晶圓W係亦可為矽,砷化鎵等之半導體晶圓,而亦可為陶瓷,玻璃,藍寶石等之
光裝置晶圓。
另外,對於晶圓W之表面係加以貼著黏著膠帶T之中央部分,對於黏著膠帶T之外周部分係加以貼著環狀的框體F。形成有此環狀補強部71之晶圓W係在加以施以特定的加工之後,以雷射加工裝置1而加以除去環狀補強部71。在雷射加工中,與使用切削刀刃之機械性切割,而成為可未對於環狀補強部71產生干擾而進行切離者。然而,特定的加工係對於形成環狀補強部71之晶圓W而言加以實施之加工,例如,於晶圓W之裝置範圍A1的背面形成反射膜之加工。
對於雷射加工裝置1之基台10上,係加以設置使保持平台30移動於X軸方向及Y軸方向之保持平台移動機構20。保持平台移動機構20係具有:平行於配置在基台10上之X軸方向的一對導軌21,和可滑動於一對之導軌21地加以配置之馬達驅動的X軸平台22。另外,保持平台移動機構20係具有:配置於X軸平台22之上面,平行於Y軸方向的一對導軌23,和可滑動於一對之導軌23地加以配置之馬達驅動的Y軸平台24。
對於X軸平台22及Y軸平台24的背面側,係各加以形成未圖示之螺母部,而對於此等螺母部係加以栓合滾動螺旋25,26。並且,由加以旋轉驅動連結於滾動螺旋25,26之一端部的驅動馬達27,28者,保持平台30則沿著導軌21,23而加以移動至X軸方向及Y軸方向。另外,對於Y軸平台24上,係保持晶圓W之保持平
台30則可旋轉於Z軸周圍地加以設置。對於保持平台30之上面係加以形成保持面31,而對於保持平台30之周圍係加以設置挾持固定晶圓W周圍之框體F的箝位部32。
對於保持平台30之後方的立壁部11係加以突設手臂部12,而對於手臂部12之前端係呈於保持平台30,以上下方向對向地,加以設置雷射光線照射手段40。在雷射光線照射手段40之加工頭41中,經由集光器而加以集光自未圖示之振盪器所振盪之雷射光線,朝向保持在保持平台30上之晶圓W而加以照射。此情況,雷射光線係對於晶圓W而言具有吸收性的波長,經由對於晶圓W而言之雷射光線的照射之時,晶圓W之一部分則被昇華而加以雷射消融。
然而,消融係指當雷射光線的照射強度則成為特定之加工臨界值以上時,在固體表面而變換為電子,熱的,光科學的及力學的能量,其結果,爆發性地釋放中性原子,分子,正負的離子,自由基,簇集,電子,光,而加以蝕刻固體表面之現象。
另外,對於雷射光線照射手段40之側方係加以設置攝影晶圓W之外周邊緣72(參照圖4B)之攝影手段45。經由攝影手段45而加以攝影晶圓W之外周邊緣72的任意3處,對於各攝影畫像而言加以實施各種畫像處理,加以檢出外周邊緣72之3點的座標。依據此外周邊緣72之3點的座標而加以算出晶圓W之中心,將晶圓W之中心作為基準,加以校準加工頭41。經由此校準而
精確度佳地將加工頭41定位於裝置範圍A1與環狀補強部71(外周剩餘範圍A2)與邊界部73。
另外,對於雷射加工裝置1係加以設置統括控制裝置各部之控制部50。控制部50係經由執行各種處理之處理器或記憶體等而加以構成。記憶體係因應用途,以 ROM(Read Only Memory)、RAM(Random Access Memory)等之一個或複數之記憶媒體而加以構成。對於控制部50的ROM係加以記憶執行後述之各步驟的各種處理之程式。在如此之雷射加工裝置1中,經由沿著裝置範圍A1與環狀補強部71之邊界部73的雷射加工,而自晶圓W加以切離環狀補強部71。
但對於加以形成有金屬製之反射膜等於晶圓W之裝置範圍A1的背面之情況,以IR照相機等,無法自晶圓W的背面側看到表面圖案,而無法確認晶圓W的方向。因此,對於本實施形態之晶圓W的外周緣,係呈亦可自背面側確認晶圓W的方向地,位置調整地形成缺口N。但當自晶圓W加以除去環狀補強部71時,形成於環狀補強部71之位置調整用之缺口N則消失之故,在後續的工程中,無法將缺口N作為基準而作位置調整。
因此,在本實施形態之晶圓W的加工方法中,在自晶圓W加以切斷環狀補強部71之前,作為呈將對應於缺口N之標記M,形成於較裝置範圍A1與環狀補強部71之邊界部73為內徑側(參照圖4C)。經由此,即使自晶圓W除去環狀補強部71,亦成為可在後續的工
程中,適當地位置調整晶圓W者。
在此,對於在本實施形態之晶圓的加工方法所使用之保持平台加以簡單地進行說明。圖2係本實施形態之晶圓及保持平台之剖面模式圖。然而,保持平台係未加以限定於圖2所示之構成,可作適宜變更。
如圖2所示,對於保持平台30之上面,係加以形成在消融加工時,放出雷射光線之環狀的放出溝33。放出溝33係對應於晶圓W之裝置範圍A1與環狀補強部71之邊界部73,而沿著保持平台30之外周而加以形成。在保持平台30之上面中,放出溝33之半徑方向內側係成為保持晶圓W之保持面31,而對應於晶圓W之裝置範圍A1。對於保持平台30之保持面31係加以形成在中心作為正交之十字狀的吸引溝34(參照圖1),和將十字狀的吸引溝34之交點作為中心之同心圓狀的環狀之吸引溝35。
十字狀的吸引溝34及環狀的吸引溝35係通過保持平台30內之流路而加以連接於吸引源(不圖示)。經由產生於此吸引溝34,35之負壓,晶圓W則藉由黏著膠帶T而吸引保持於保持面31。另外,在保持平台30之上面中,放出溝33之半徑方向外側的環狀之支持面36係加以形成為與保持面31相同的高度,而對應於晶圓W之外側的黏著膠帶T。經由此,經由保持面31與支持面36而以水平狀態加以支持黏著膠帶T,加以防止對於放出溝33內之環狀補強部71的掉落。
放出溝33的溝底37係呈朝向保持平台30的中心而變深地傾斜。溝底37之推拔形狀的表面,係以噴沙法等加以形成使雷射光線散射之細微的凹凸。以此溝底37之傾斜,雷射光線的反射光之方向則自光源脫離,經由細微之凹凸,雷射光線的強度變弱者,加以抑制經由反射光之光源的破損。另外,在攝影晶圓W時,亦同樣地,攝影光的反射光之方向則自攝影手段45(參照圖4A)脫離,經由細微的凹凸,攝影光的反射光則變弱之故,而在攝影畫像,顯示晶圓W之外周邊緣72的明暗對比則作為明確。
接著,參照圖3至圖7,對於本實施形態之晶圓的加工方法加以詳細說明。圖3係顯示晶圓支持步驟,圖4係顯示標記形成步驟,圖5係顯示環狀補強部分離步驟,圖6係顯示環狀補強部除去步驟,圖7係顯示位置關係檢出步驟之各一例的圖。然而,以下之晶圓的加工方法係顯示一例者,可適宜做變更。然而,圖4A係各顯示對於晶圓而言之攝影處理,圖4B及圖4C係顯示對於晶圓而言之標記處理。
如圖3所示,首先加以實施晶圓支持步驟。在晶圓支持步驟中,於環狀框體F之開口部,加以收容有晶圓W,於晶圓W的表面及框體F,加以貼著黏著膠帶T。經由此,在將環狀補強部71朝向於上方之狀態,藉由黏著膠帶T而加以支持晶圓W於框體F。晶圓W係在藉由黏著膠帶T而加以支持於框體F內側的狀態,加以搬入
至上述之雷射加工裝置1(參照圖1)。然而,晶圓支持步驟係以操作者的手作業而加以實施亦可,而亦可經由不圖示之膠帶貼片機而加以實施。
如圖4所示,對於晶圓支持步驟之後係加以實施標記形成步驟的攝影處理。如圖4A所示,在標記形成步驟的攝影處理中,於雷射加工裝置1(參照圖1)之保持平台30,加以保持晶圓W,再經由箝位部32而夾持固定晶圓W周圍之框體F。並且,加以定位晶圓W之環狀補強部71於攝影手段45之下方,再經由攝影手段45而攝影晶圓W之外周邊緣72。此時,自攝影手段45加以照射攝影光於晶圓W之外周邊緣72周邊,由引導外周邊緣72周邊的反射光而加以生成攝影畫像。
對於外周邊緣72之內側係存在有環狀補強部71之水平的上面76,而來自攝影手段45之落射光(攝影光)係在環狀補強部71之上面76加以反射(暈光)而導入至攝影手段45。另一方面,對於外周邊緣72之外側係存在有放出溝33,而自攝影手段45之落射光係透過黏著膠帶T而在放出溝33之推拔形狀的溝底37而反射。在溝底37所反射的光則朝向晶圓W之中心同時,經由溝底37之細微的凹凸而加以散射。因而,在外周邊緣72之外側反射的反射光係成為不易導入至攝影手段45。
在外周邊緣72周邊之攝影畫像中,導入反射光至攝影手段45之外周邊緣72之內側則明亮地加以顯示之另一方面,不易導入反射光至攝影手段45,而外周邊
緣72之外側則暗淡地加以顯示。因而,在晶圓W之外周邊緣72的明暗對比則成為明確,而正確地辨識晶圓W之外周邊緣72。由如此作為,在晶圓W之複數處(在本實施形態中係為3處)中,加以攝影晶圓W之外周邊緣72,自各攝影畫像而加以檢出外周邊緣72之座標。並且,依據複數之外周邊緣72的座標,加以算出晶圓W的中心O(參照圖4B)。
如圖4B所示,對於標記形成步驟的攝影處理之後,加以實施標記處理。在標記處理中,於環狀補強部71與裝置範圍A1之邊界部73,即較在後續之環狀補強部分離步驟中所形成之雷射加工痕79為內徑側,加以形成對應缺口N之標記M(參照圖4C)。此情況,在連結晶圓W之中心O與缺口N之直線L1上,較邊界部73為內側之標記位置P則定位於加工頭41(參照圖4C)之正下方。然而,缺口N之位置係依據自預先所記憶之晶圓W的中心O之距離或方向而加以檢出亦可,而亦可經由攝影手段45而與外周邊緣72同時加以檢出。
並且,如圖4C所示,於晶圓W的表面附近,加以調整雷射光線的集光位置之後,朝向較晶圓W之裝置範圍A1與環狀補強部71之邊界部73為內側的標記位置P,加以照射雷射光線。如上述,雷射光線則對於晶圓W而具有吸收性的波長之故,在標記位置P部分性地加以除去晶圓W之表面,加以形成對應缺口N之位置決定用的標記M。然而,標記於晶圓W表面之標記手段
係不限於上述之雷射光線照射手段40,而以標記油墨於晶圓W表面之噴墨式的塗佈手段亦可。
如圖5所示,對於標記形成步驟之後係加以實施環狀補強部分離步驟。在環狀補強部分離步驟中,在保持晶圓W於保持平台30之狀態,經由對於晶圓W而言具有吸收性的雷射光線而加以分離裝置範圍A1與環狀補強部71之邊界部73。此情況,裝置範圍A1與環狀補強部71之邊界部73則加以定位於加工頭41之正下方。並且,加以調整雷射光線的集光點之後,朝向裝置範圍A1與環狀補強部71之邊界部73而加以照射雷射光線。
經由在加以照射雷射光線而旋轉保持平台30之時,裝置範圍A1與環狀補強部71之邊界部73則與黏著膠帶T同時加以切斷,而分離裝置範圍A1與環狀補強部71。此時,雷射光線係貫通晶圓W及黏著膠帶T,在放出溝33之溝底37,朝向於保持平台30的中心而加以反射。另外,對於溝底37係加以設置細微之凹凸之故,雷射光線則被散射而強度變弱。因此,在溝底37而反射之雷射光線則不易朝向加工頭41而加以反射,假設雷射光線朝向加工頭41而反射,強度則亦下降之故而未對於光源帶來損傷。
然而,在環狀補強部分離步驟中,沿著裝置範圍A1與環狀補強部71之邊界部73而加以切斷,但當切斷寬度窄時,而有以在消融加工所產生之碎片而埋入切斷寬度之可能性。因此,呈擴大裝置範圍A1與環狀補強
部71之邊界部73的切斷寬度地,重複實施環狀補強部分離步驟於同心圓狀,作為呈完全地分離裝置範圍A1與環狀補強部71亦可。
如圖6所示,對於環狀補強部分離步驟之後係加以實施環狀補強部除去步驟。在環狀補強部除去步驟中,加以解除經由箝位部32之框體F的夾持固定,而搬送手段60則定位於保持平台30之上方。並且,經由搬送手段60之吸附墊片61而加以保持框體F,藉由黏著膠帶T而支持於框體F之環狀補強部71則與框體F同時,自保持平台30脫離。經由此,對於保持平台30上,係自晶圓W加以除去環狀補強部71,僅殘留晶圓W之裝置範圍A1。
但當自晶圓W加以除去環狀補強部71時,無法檢查缺口N與標記M是否正確地對應者。因此,如圖7所示,在標記形成步驟之後,且於環狀補強部分離步驟之前,加以實施檢出形成於晶圓W上之標記M與缺口N之位置關係的位置關係檢出步驟亦可。在位置關係檢出步驟中,加以定位晶圓W之標記M於攝影手段45(參照圖4A),經由攝影手段45而加以攝影晶圓W上之標記M。並且,自攝影畫像加以檢出標記M之正確的座標,加以檢出對於缺口N而言之標記M之詳細的位置關係。
此情況,加以求得對於連結晶圓W之中心O與標記M之直線L2而言之連結晶圓W之中心O與缺口N之直線L1的角度θ。經由此,加以確認自晶圓W之中
心O而視之缺口N的方向與標記M的方向之角度偏移。對於此缺口N而言之標記M的角度偏移或標記M之座標係在後續的工程,加以利用於對於晶圓W之分割預定線(不圖示)而言之加工手段的位置調整等。然而,檢出標記M與缺口N之詳細的位置關係之檢出手段係不限於上述之攝影手段45,而如為可辨識晶圓W上之標記M的構成,並無特別加以限定。
如以上,在本實施形態之晶圓W的加工方法中,沿著裝置範圍A1與環狀補強部71之邊界部73而加以照射雷射光線,自晶圓W之裝置範圍A1加以分離環狀補強部71。並且,由使分離後之環狀補強部71,自保持平台30脫離者,自晶圓W,加以除去環狀補強部71。此時,對應於環狀補強部71之外周緣的缺口N之標記M則加以形成於較裝置範圍A1與環狀補強部71之邊界部73為內徑側之故,即使自晶圓W加以除去環狀補強部71,亦未有自晶圓W,標記M消失之情況。因而,在後續的工程中,取代於缺口N而將標記M作為基準,而可適當地位置調整晶圓W者。
然而,本發明係未加以限定於上述實施形態,而可作種種變更而實施者。在上述實施形態中,對於附加圖面所圖示之尺寸或形狀等,係未加以限定於此,而可在發揮本發明之效果的範圍內作適宜變更。其他,只要在不脫離本發明之目的的範圍,可作適宜變更而實施者。
例如,在上述之實施形態中,作成於保持平
台30之上面,形成有放出溝33之構成,但不限定於此構成。如未有經由雷射光線的反射而對於光源帶來損傷,即使未加以形成放出溝33於保持平台30之上面亦可。
例如,在上述之實施形態中,做成在環狀補強部分離步驟之前,實施標記形成步驟之構成,但並不限定於此構成。而於環狀補強部分離步驟之後實施標記形成步驟亦可。
另外,在上述之實施形態中,作為在連結晶圓W之中心O與缺口N之直線L1上,形成標記M於較裝置範圍A1與環狀補強部71之邊界部73為內徑側的構成,但並不限定於此構成。標記M係如在裝置範圍A1與環狀補強部71之邊界部73為內徑側,形成於對應缺口N之位置即可。例如,在正交於連結晶圓W之中心O與缺口N之直線L1的直線上,形成於較裝置範圍A1與環狀補強部71之邊界部73為內徑側亦可。即,對應於缺口N之標記M係指顯示與缺口N之位置關係為明確之標記M。
另外,在上述之實施形態中,做成由同一之雷射加工裝置1而加以實施標記形成步驟,環狀補強部分離步驟,環狀補強部除去步驟,位置關係檢出步驟之構成,但並不限定於此構成。各步驟係由另外的裝置而加以實施亦可。
如以上說明,本發明係即使自形成環狀補強部於外周側之晶圓,除去環狀補強部,亦具有可適當地位
置調整晶圓之效果,特別是對於在裝置範圍的背面,金屬製之反射膜則自晶圓除去環狀補強部之晶圓的加工方法為有作用。
30‧‧‧保持平台
31‧‧‧保持面
32‧‧‧箝位部
33‧‧‧放出溝
37‧‧‧溝底
40‧‧‧雷射光線照射手段
41‧‧‧加工頭
45‧‧‧攝影手段
71‧‧‧環狀補強部
72‧‧‧外周邊緣
73‧‧‧邊界部
76‧‧‧水平的上面
79‧‧‧雷射加工痕
A1‧‧‧裝置範圍
A2‧‧‧外周剩餘範圍
F‧‧‧框體
L1‧‧‧直線
M‧‧‧標記
N‧‧‧缺口
O‧‧‧中心
P‧‧‧標記位置
T‧‧‧黏著膠帶
W‧‧‧晶圓
Claims (1)
- 一種晶圓的加工方法,係於表面具有形成有複數之裝置的裝置範圍,和圍繞該裝置範圍之外周剩餘範圍,且於外周緣具有顯示結晶方位之缺口的同時,於背面加以形成有對應於該裝置範圍之圓形凹部與對應於該外周剩餘範圍之環狀補強部之晶圓的加工方法,其特徵為具備:於具有收容晶圓之開口部的環狀框體之該開口部,收容晶圓,且將該晶圓的表面,貼著於外周部則裝著於環狀框體之黏著膠帶,將該晶圓,藉由該黏著膠帶而由該環狀框體進行支持之晶圓支持步驟,和將支持於該環狀框體之晶圓,由保持平台進行保持,且經由對晶圓照射具有吸收性之波長的雷射光線,將該環狀補強部與該裝置範圍之邊界部與該黏著膠帶同時切斷,而分離該裝置範圍與該環狀補強部之環狀補強部分離步驟,和在該環狀補強部分離步驟之前或後,於該環狀補強部與該裝置範圍之邊界部的內徑側,形成對應於缺口之標記的標記形成步驟,和實施該環狀補強部分離步驟及該標記形成步驟之後,使藉由該黏著膠帶而支持於該環狀框體之該環狀補強部,與該環狀框體同時,自該保持平台脫離,而除去該環狀補強部之環狀補強部除去步驟;在該標記形成步驟之後,且於該環狀補強部分離步驟之前,更具備由檢出手段而檢出形成於晶圓上之該標記與 該缺口的位置關係之位置關係檢出步驟。
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