TWI700841B - 發光裝置之製造方法 - Google Patents
發光裝置之製造方法 Download PDFInfo
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- TWI700841B TWI700841B TW105108060A TW105108060A TWI700841B TW I700841 B TWI700841 B TW I700841B TW 105108060 A TW105108060 A TW 105108060A TW 105108060 A TW105108060 A TW 105108060A TW I700841 B TWI700841 B TW I700841B
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- Prior art keywords
- conductive adhesive
- anisotropic conductive
- led element
- temperature
- wiring substrate
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C09J9/02—Electrically-conducting adhesives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/70—Chelates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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- C09J11/06—Non-macromolecular additives organic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
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Abstract
本發明係於配線基板51上經由異向導電性接著劑50接合LED元件52而製造發光裝置。於該製造過程中,在配線基板51上配置異向導電性接著劑50,於該異向導電性接著劑50上配置LED元件52。異向導電性接著劑50中含有具有聚合性之環氧改質聚矽氧系樹脂及金屬螯合化合物,於藉由加壓體53按壓LED元件52時,使配線基板51維持160℃以上且210℃以下之溫度,並且將加壓體53設為低於配線基板51之溫度,且僅按壓特定之按壓時間。環氧改質聚矽氧系樹脂與金屬螯合化合物係於低溫進行反應,因此可不使螢光體層崩裂而將LED元件52暫時連接於配線基板51。
Description
本發明係關於一種製造使用LED元件之發光裝置之技術,特別是關於一種將具有螢光體層之LED元件固定至配線基板之技術。
作為將LED等晶片零件構裝至電路基板之方法,廣泛地採用如下方法:使用異向導電性接著劑對晶片零件進行倒裝晶片構裝,其中,該異向導電性接著劑係於環氧系接著劑中分散導電性粒子而成(例如參照專利文獻1、2)。根據該方法,晶片零件與電路基板之間係藉由異向導電性接著劑中所含之導電性粒子而電性連接,故而可縮短連接製程所需之時間,可提高生產效率。
而且,目前利用LED元件(其使用螢光體層)獲得之白色發光裝置成為照明裝置之主流,並開發有各種技術。例如雖有對凸塊使用焊料,進行回焊而將LED元件連接於配線基板之技術(專利文獻3、4等),但於藉由加熱超音波等進行回焊之情形時,存在如下問題:於發光之本體半導體晶片與將發光之光白色化之螢光體層之間發生剝離之問題。又,若欲僅藉由焊料而將本體半導體晶片固定至配線基板,則有本體半導體晶片自配線基板剝離之虞。
作為解決對策,可列舉於配線基板之表面塗佈助焊劑、或於回焊時施加負荷等方法,但於助焊劑洗淨時容易發生螢光體層之剝離,又,若於高溫下施加負荷,則存在螢光體層破裂之問題。
專利文獻1:日本特開2010-24301號公報
專利文獻2:日本特開2012-186322號公報
專利文獻3:日本特開2012-216712號公報
專利文獻4:日本特開2013-541805號公報
本發明係為了解決上述習知技術之不良情況而創作者,其目的在於提供一種不破壞螢光體層而獲得發光裝置之技術。
本發明之發明人發現:與硬化劑使用酸酐或咪唑化合物時相比,於使用金屬螯合化合物作為硬化劑時環氧改質聚矽氧系樹脂會於低溫進行聚合反應、或於將LED元件與配線基板之間暫時連接時螢光體層崩裂,其等之原因在於熱壓接之時間較長、或熱壓接溫度為高溫之方面,從而發明出本發明,即:藉由將進行暫時連接時之配線基板之溫度設為低溫、及採用金屬螯合化合物,而於將使用異向導電性接著劑之LED元件進行暫時連接之步驟中,藉由金屬螯合化合物,以低溫且短時間使異向導電性接著劑中所含之環氧改質聚矽氧系樹脂進行聚合反應。為了將螢光體層設為低溫,亦可採用將按壓體設為較配線基板溫度更低之情形。
根據上述觀點,本發明係一種發光裝置之製造方法,其具有
如下步驟:配置步驟,其係將LED元件配置於異向導電性接著劑上,該異向導電性接著劑係配置在配線基板上且含有聚合成分及硬化劑者;一次加熱步驟,其係一面藉由加壓體以特定之按壓時間按壓上述LED元件,一面使上述異向導電性接著劑升溫,藉由上述硬化劑使上述聚合成分之一部分進行聚合反應,從而將上述LED元件與上述配線基板暫時連接;及二次加熱步驟,其係使暫時連接之上述配線基板、上述異向導電性接著劑及上述LED元件升溫並使上述聚合成分進行聚合反應,而使上述異向導電性接著劑硬化而進行正式連接;且上述LED元件具有螢光體層,上述聚合成分中含有環氧改質聚矽氧系樹脂,上述硬化劑中使用金屬螯合化合物,且上述一次加熱步驟中對上述配線基板,於160℃以上且210℃以下之溫度進行特定之按壓時間的按壓。
又,本發明係一種發光裝置之製造方法,其中,上述按壓時間設為60秒以下之時間。
又,本發明係如上述任一項之發光裝置之製造方法,其中,上述二次加熱步驟中之上述配線基板之溫度設為低於上述一次加熱步驟中上述配線基板的溫度,且上述二次加熱步驟中對上述配線基板進行加熱之加熱時間設為比上述按壓時間長。
又,本發明係如上述任一項之發光裝置之製造方法,其中,使上述加壓體維持20℃以上且40℃以下之溫度。
由於不使用助焊劑,因此無需洗淨步驟。又,螢光體層不會崩裂,因此良率提高。
10‧‧‧發光裝置
50‧‧‧異向導電性接著劑
51‧‧‧配線基板
52‧‧‧LED元件
53‧‧‧加壓體
54‧‧‧導電粒子
55‧‧‧平台
56‧‧‧加熱裝置
57‧‧‧發熱體
58‧‧‧電源裝置
59‧‧‧導熱性填料
61‧‧‧電極
16‧‧‧螢光體層
17‧‧‧本體半導體晶片
圖1(a)~(d)係用以說明本發明之製造步驟之立體圖。
圖2(a)~(c)係用以說明本發明之製造步驟之剖面圖(其一)。
圖3(d)~(f)係用以說明本發明之製造步驟之剖面圖(其二)。
<異向導電性接著劑>
本發明中所使用之異向導電性接著劑由導電膏構成,含有作為黏合劑樹脂之環氧改質聚矽氧系樹脂、作為潛伏性硬化劑之金屬螯合物、及作為導電成分之金屬成分。該異向導電性接著劑不含助焊劑。
作為黏合劑樹脂之環氧改質聚矽氧系樹脂其黏度穩定性及耐熱性較高,因此較佳。作為此種環氧改質聚矽氧系樹脂,例如可使用下述通式(1)所表示之二縮水甘油基異三聚氰酸酯改質聚矽氧烷。
此處,R係碳數為1~6之低級烷基等烷基、或碳環式芳香族基、雜環式芳香族等之芳基。作為烷基之較佳之具體例,可列舉甲基、乙基、丙基、異丙基、丁基、異丁基,作為特佳之烷基,可列舉甲基。又,
作為芳基之較佳之具體例,可列舉苯基。n為1~40之數,較佳為1~9之數,更佳為1或2之數。
環氧改質聚矽氧系樹脂為通式(1)之二縮水甘油基異三聚氰酸酯改質聚矽氧烷,並且可於無損本發明之效果之範圍內含有雜環系環氧化合物、脂環式環氧化合物或氫化環氧化合物等。
作為脂環式環氧化合物,可較佳地列舉分子內具有兩個以上之環氧基者。該等可為液狀,亦可為固體狀。具體而言,可列舉縮水甘油基六氫雙酚A、3',4'-環氧環己烯羧酸3,4-環氧環己烯基甲酯等。其中,就可對硬化物確保適於構裝LED元件等之透光性且快速硬化性亦優異之方面而言,可較佳地使用縮水甘油基六氫雙酚A、3',4'-環氧環己烯羧酸3,4-環氧環己烯基甲酯。
作為氫化環氧化合物,可使用上述雜環系環氧化合物或脂環式環氧化合物之氫化物、或其他公知之氫化環氧化合物。該等脂環式環氧化合物、雜環系環氧化合物或氫化環氧化合物可單獨與通式(1)之二縮水甘油基異三聚氰酸酯改質聚矽氧烷併用,亦可併用兩種以上。又,除該等環氧化合物以外,只要無損本發明之效果,亦可併用其他環氧化合物。例如可列舉:使雙酚A、雙酚F、雙酚S、四甲基雙酚A、二芳基雙酚A、對苯二酚、鄰苯二酚、間苯二酚、甲酚、四溴雙酚A、三羥基聯苯、二苯甲酮、雙間苯二酚、雙酚六氟丙酮、四甲基雙酚A、四甲基雙酚F、三(羥基
苯基)甲烷、聯二甲苯酚、酚系酚醛清漆、甲酚酚醛清漆等多元酚與表氯醇進行反應而獲得之縮水甘油醚;使甘油、新戊二醇、乙二醇、丙二醇、丁二醇、己二醇、聚乙二醇、聚丙二醇等脂肪族多元醇與表氯醇進行反應而獲得之聚縮水甘油醚;使如對羥基苯甲酸、β-羥基萘甲酸之羥基羧酸與表氯醇進行反應而獲得之縮水甘油醚酯;自如鄰苯二甲酸、甲基鄰苯二甲酸、間苯二甲酸、對苯二甲酸、四氫鄰苯二甲酸、內亞甲基四氫鄰苯二甲酸、內亞甲基六氫鄰苯二甲酸、偏苯三甲酸、聚合脂肪酸之聚羧酸獲得之聚縮水甘油酯;自胺基苯酚、胺基烷基苯酚獲得之縮水甘油基胺基縮水甘油醚;自胺基苯甲酸獲得之縮水甘油基胺基縮水甘油酯;自苯胺、甲苯胺、三溴苯胺、苯二甲胺、二胺基環己烷、雙胺基甲基環己烷、4,4'-二胺基二苯甲烷、4,4'-二胺基二苯基碸等獲得之縮水甘油胺;環氧化聚烯烴等公知之環氧化合物類。
金屬螯合化合物其中心金屬並無特別限定,中心金屬可使用鋁、鋯、鈦等各種金屬。於該等金屬螯合物中,特佳為使用反應性較高之鋁螯合物。
作為鋁螯合劑,可列舉下述通式(2)所表示之3個β-酮烯醇酯陰離子配位於鋁之錯合物。
此處,R1、R2及R3分別獨立地為烷基或烷氧基。作為烷基,可列舉甲基、乙基等。作為烷氧基,可列舉甲氧基、乙氧基、油氧基。
作為通式(2)所表示之鋁螯合劑之具體例,可列舉三(乙醯丙酮)鋁、三(乙醯乙酸乙酯)鋁、單乙醯丙酮鋁雙(乙醯乙酸乙酯)、單乙醯丙酮鋁乙醯乙酸雙油酯、乙醯乙酸乙基鋁二異丙酯、乙醯乙酸烷基鋁二異丙酯等。
金屬螯合化合物較理想的是以含浸於多孔質粒子中之狀態含有於異向導電性接著劑中而用作潛伏性硬化劑。除金屬螯合化合物以外,亦可調配矽烷化合物作為輔助硬化劑。
作為導電成分之金屬成分係由粉末狀之金屬所構成者。作為構成金屬成分之金屬,可使用金、銀、銅、鎳、表面經金屬鍍敷之樹脂粒子等。
金屬粉末之粒徑係就確保塗佈穩定性之觀點而言,較佳為使用平均粒徑為3μm以上且10μm以下者。又,亦可於異向導電性接著劑中含有導熱性填料。作為導熱性填料之一例,可列舉焊料、無鉛焊料、氧化鋅、氮化硼、氧化鋁等。於該等中,就散熱性及成本之觀點而言,較理想的是無鉛焊料。
於本發明之情形時,異向導電性接著劑中之環氧改質聚矽氧系樹脂與金屬螯合化合物之調配比(重量%)較佳設為100:2~100:10。又,環氧改質聚矽氧系樹脂與金屬成分之調配比(體積%)較佳為設為100:1~100:30。另一方面,關於環氧改質聚矽氧系樹脂與導熱性填料之調配比(體積%),亦較佳為設為100:1~100:30。
<發光裝置之製造步驟>
首先,如圖1(2)所示,將形成有鋁(Al)配線層之由陶瓷所構成之配線基板51(厚度0.4mm)配置於平台55上,如圖1(b)所示,於各配線基板51之Al配線層上分別配置約10μg之異向導電性接著劑50,使配線基板51之Al配線層與異向導電性接著劑50接觸。將該狀態之剖面圖示於圖2(a)。圖中之符號54為導電粒子,此處為表面經金屬鍍敷之樹脂粒子。導電粒子54之粒徑較理想的是5μm以上且7μm以下。又,圖中之符號59為導熱性填料,粒徑為3μm以上且10μm以下,此處使用無鉛焊料之粒子。
於平台55設置有加熱裝置56。自電源裝置58使電流流過設置於加熱裝置56之發熱體57,因發熱體57發熱而平台55預先升溫至特定溫度。配線基板51及配線基板51上之異向導電性接著劑50係由升溫之平台55加熱而升溫。
其次,如圖1(c)、圖2(b)所示,於異向導電性接著劑50上配置LED元件52(尺寸:0.65mm×0.65mm,厚度0.36mm)。LED元件52係於本體半導體晶片17之單面配置有螢光體層16,於相反側之面設置有電極61,電極61係與異向導電性接著劑50接觸而配置。
此處,螢光體層16係於表面具有保護層,如圖1(d)、圖2(c)所示,使設置於壓接裝置之加壓體53與LED元件52之螢光體層16之表面接觸。
對加壓體53以維持20℃以上且40℃以下之室溫程度之溫度之方式進行溫度控制,對平台55以配線基板51成為160℃以上且210℃以下、較理想的是成為180℃以上且190℃以下之溫度之方式進行溫度控制。
於該狀態下,若藉由加壓體53按壓LED元件52,則異向導電性接著劑50因自加壓體53對LED元件52施加之按壓力而被擠向配線基板51之外側,從而LED元件52與配線基板51之間之距離接近,如圖3(d)所示,位於配線基板51之Al配線層與LED元件52之電極61之間之導電粒子54接觸於配線基板51之Al配線層及電極61之兩者,配線基板51之Al配線層與電極61經由導電粒子54而電性連接。
異向導電性接著劑50係藉由如下方式獲得之化合物而使LED元件52接著於配線基板51,即該化合物係:利用經升溫之配線基板51使異向導電性接著劑50受到一次加熱而升溫,若因升溫而異向導電性接著劑50中所含之金屬螯合化合物使含有之環氧改質聚矽氧系樹脂(二縮水甘油基異三聚氰酸酯改質聚矽氧烷)之一部分聚合,則利用聚合反應而獲得。
若LED元件52之螢光體層16被加熱至高於190℃之溫度,則具有崩裂之性質,於本例中,加壓體53係設為低於上限為210℃之配線基板51之溫度,故而對由配線基板51與加壓體53夾住之LED元件52進行一次加熱之溫度成為低於配線基板51之上限溫度210℃之溫度。
又,若螢光體層16於加壓之狀態升溫,則容易崩裂,因此加壓體53按壓LED元件52之按壓時間設定為20秒以下,以不會使螢光體層16崩裂。
若藉由加壓體53進行之按壓經過按壓時間而結束,則如圖3(e)所示,加壓體53遠離LED元件52。於該狀態下,LED元件52接著於配線基板51,LED元件52與配線基板51呈不會相對移動之暫時連接之狀態。
以暫時連接之狀態搬運配線基板51與暫時連接之LED元件52,搬入至加熱爐中並對配線基板51、異向導電性接著劑50及LED元件52進行二次加熱。加熱爐內之二次加熱之溫度係設為低於藉由設置於平台55之加熱裝置56而一次加熱時之溫度,又,加熱爐中之加熱時間係設為長於按壓時間。
藉由在加熱爐中之二次加熱而推進由金屬螯合化合物產生之環氧改質聚矽氧系樹脂之聚合反應,其結果,異向導電性接著劑50硬化而進行將LED元件52固定至配線基板51之正式連接,從而獲得圖3(f)之發光裝置10。
若對該發光裝置10通電,則本體半導體晶片17發光,射出之發光之光於透過螢光體層16時發生波長轉換,從而自發光裝置10發出白色光。再者,於本例之異向導電性接著劑50中不含助焊劑而亦可不設置發光裝置10之洗淨步驟。
<測定>
於製造發光裝置10之步驟中,在改變一次加熱時之配線基板51之溫度
及按壓加熱,藉由加壓體53按壓LED元件52,且藉由異向導電性接著劑50將LED元件52暫時連接於配線基板51時,對LED元件52之螢光體層16側之表面溫度、及配線基板51之表面溫度進行測定。LED元件52之螢光體層16側之溫度設為與加壓體53之與LED元件52接觸的表面之溫度相同之值。又,不藉由加熱爐進行加熱而對去除加壓體53後之配線基板51施加電壓,對LED元件52與配線基板51之間之導通電阻值進行測定。將測定結果示於下述表1。
關於導通電阻,測定使特定值之電流流過樣品時之電阻值,將電阻值經判斷為未電性連接之情形設為「×」,將所測得之電阻值為基準值以下之情形設為「○」,將雖為電性連接但電阻值大於基準值之情形設為「△」。
又,對自配線基板51卸除LED元件52時之力進行測定,將異向導電性接著劑50之聚合不充分而未暫時連接之情形設為「×」,將為暫時連接之情形設為「○」,將雖為暫時連接但卸除時之力小於基準值之情形設為「△」。
於表1中,「螢光體形狀」之項目係藉由顯微鏡觀察去除加
壓體53後之螢光體層16中之螢光體粒子之形狀的結果,對螢光體粒子之變形較大之螢光體層16標註「×」,對變形較小之螢光體層16標註「○」,將變形為「×」與「○」之中間之情形設為「△」。本發明包含如下情形:於該「螢光體形狀」之項目為「×」或「△」之情形時,螢光體層16亦不會崩裂而發揮功能。
根據該表1之結果,可知若將加壓體53之溫度設為35℃以下,將配線基板51之溫度設為160℃以上且210℃以下,且將按壓時間設為20秒以上且60秒以下,則電性連接及暫時連接狀態為良好。
50‧‧‧異向導電性接著劑
51‧‧‧配線基板
52‧‧‧LED元件
53‧‧‧加壓體
54‧‧‧導電粒子
55‧‧‧平台
56‧‧‧加熱裝置
57‧‧‧發熱體
58‧‧‧電源裝置
59‧‧‧導熱性填料
61‧‧‧電極
16‧‧‧螢光體層
17‧‧‧本體半導體晶片
Claims (5)
- 一種發光裝置之製造方法,其具有如下步驟:配置步驟,其係將LED元件配置於異向導電性接著劑上,該異向導電性接著劑係配置在配線基板上且含有聚合成分及硬化劑;一次加熱步驟,其係一面藉由加壓體以特定之按壓時間按壓上述LED元件,一面使上述異向導電性接著劑升溫並藉由上述硬化劑使上述聚合成分之一部分進行聚合反應,而將上述LED元件與上述配線基板暫時連接;及二次加熱步驟,其係使暫時連接之上述配線基板、上述異向導電性接著劑及上述LED元件升溫並使上述聚合成分進行聚合反應,而使上述異向導電性接著劑硬化而進行正式連接;且上述LED元件具有螢光體層,上述聚合成分中含有環氧改質聚矽氧系樹脂,上述硬化劑中使用金屬螯合化合物,且於上述一次加熱步驟中對上述配線基板,在160℃以上且210℃以下之溫度進行特定之按壓時間的按壓。
- 如申請專利範圍第1項之發光裝置之製造方法,其中,上述按壓時間設為60秒以下之時間。
- 如申請專利範圍第1或2項之發光裝置之製造方法,其中,上述二次加熱步驟中之上述配線基板之溫度設為低於上述一次加熱步驟中上述配線基板之溫度,且上述二次加熱步驟中對上述配線基板進行加熱之加熱時間設為比 上述按壓時間長。
- 如申請專利範圍第1或2項之發光裝置之製造方法,其中,使上述加壓體維持20℃以上且40℃以下之溫度。
- 如申請專利範圍第3項之發光裝置之製造方法,其中,使上述加壓體維持20℃以上且40℃以下之溫度。
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