TWI699443B - 濺鍍裝置 - Google Patents
濺鍍裝置 Download PDFInfo
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- TWI699443B TWI699443B TW104124387A TW104124387A TWI699443B TW I699443 B TWI699443 B TW I699443B TW 104124387 A TW104124387 A TW 104124387A TW 104124387 A TW104124387 A TW 104124387A TW I699443 B TWI699443 B TW I699443B
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- target
- sputtering
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- magnesium oxide
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 51
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 46
- 239000000395 magnesium oxide Substances 0.000 claims description 42
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 abstract description 27
- 238000009826 distribution Methods 0.000 abstract description 17
- 239000007789 gas Substances 0.000 abstract description 13
- 239000002245 particle Substances 0.000 description 18
- 239000013077 target material Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000005291 magnetic effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000005641 tunneling Effects 0.000 description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910019236 CoFeB Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 2
- 229910001632 barium fluoride Inorganic materials 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 238000012864 cross contamination Methods 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 2
- 229910001637 strontium fluoride Inorganic materials 0.000 description 2
- 229910014031 strontium zirconium oxide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- OMQSJNWFFJOIMO-UHFFFAOYSA-J zirconium tetrafluoride Chemical compound F[Zr](F)(F)F OMQSJNWFFJOIMO-UHFFFAOYSA-J 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- KSQXWURTHKFKGU-UHFFFAOYSA-L [F].[F-].[Mg+2].[F-] Chemical compound [F].[F-].[Mg+2].[F-] KSQXWURTHKFKGU-UHFFFAOYSA-L 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
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Abstract
提供一種能夠將使結晶性作了更進一步的提升之絕緣物膜以良好的膜厚分布均一性來成膜之濺鍍裝置。
本發明之濺鍍裝置(SM)，係在設置有絕緣物靶(4)之真空腔(1)內，具備有與此絕緣物靶相對向而保持應處理之基板(W)的平台(2)，並設置有將平台作旋轉驅動之驅動手段(3)、和對於絕緣物靶投入高頻電力之濺鍍電源(E1)、以及將稀有氣體導入至真空腔內之氣體導入手段(13)、(14)，將基板與絕緣物靶之濺鍍面之間的間隔(d3)，設定為40mm~150mm之範圍內。
Description
本發明，係有關於成膜氧化鎂膜等之絕緣物膜的濺鍍裝置。
近年來，使用有對於穿隧磁阻(TMR：Tunneling Megneto Resistance)作了利用的MTJ(Magnetic Tunnel Junction)元件之磁性隨機存取記憶體(MRAM：Magnetic Random Access Memory)，係受到矚目。又，作為將穿隧障壁層以2枚的強磁性材料之電極層來作包夾所成的MTJ元件之穿隧障壁層，係對於使用結晶性之氧化鎂(MgO)膜一事有所檢討。對於此種MTJ元件之特性的提升，磁阻變化率(當兩側之電極層的磁化為平行時之穿隧阻抗(RP)和當兩側之電極層之磁化為反平行時的穿隧阻抗(RAP)之間之變化率：MR比)係為其中一個重要的因素，為了將MR比盡可能地作提升，係需要進行電極層與穿隧障壁層之間的界面之構造的改良(使O或O2不會在界面處而過度地殘留等)以及氧化鎂之結晶性的提升，此事係為一般所周知。另一方面，對於上述氧化鎂膜之成膜
裝置，則係要求其具備有高度量產性，並且能夠以使在應處理之基板(例如，
300mm之矽晶圓)面內的膜厚分布成為未滿1σ1%的方式來進行成膜。
作為能夠成膜此種氧化鎂膜之成膜裝置，係根據專利文獻1而周知有下述之濺鍍裝置。此濺鍍裝置，係在設置有氧化鎂製之靶的真空腔內之底部處，具備有與靶相對向而保持應處理之基板的平台，並設置有對於靶投入高頻電力之濺鍍電源、以及將稀有氣體導入至真空腔內之氣體導入手段。又，在平台處，係設置有以此平台之中心作為旋轉中心而進行旋轉驅動之驅動手段，並且，係將被配置在真空腔之上部處的靶，分成第1靶材和面積為較第1靶材更小之第2靶材來構成，並將第1以及第2之兩靶材相對於基板表面(成膜面)而有所傾斜地來作配置。於此情況，為了將例如起因於成膜時之氧離子所導致的氧化鎂膜之局部性的缺陷降低，係認為以下述一般之配置為較理想，亦即是：將當從各靶之中心起而對於被保持在平台上之基板面內畫下垂線時的所謂T-S間距離設定為例如190mm以上之較長的長度，並且使各靶之濺鍍面不會與基板相對向。
於此，被使用在MTJ元件之穿隧障壁層中的氧化鎂膜，於其之成膜後的工程中，係會有進行用以提升結晶性之退火處理的情形。在退火溫度中，係存在有裝置上的限制或起因於基底之膜的構成等所致之限制，而僅能夠升溫至700℃程度。因此，係期待能夠藉由使用濺鍍裝
置而在成膜氧化鎂膜時預先使結晶性提升，來達成更大的MR比。故而，本發明之發明者們，係反覆進行努力研究，並得到下述的知識：亦即是，當對於氧化鎂之靶投入高頻電力並進行濺鍍時，若是將從靶所飛散出之濺鍍粒子中的主要為MgO之中性粒子，而一面極力抑制此濺鍍粒子所具有的(濺鍍)能量之減少一面使其到達成膜對象物(面)處，則藉由濺鍍粒子之遷移(migration)，岩鹽型構造之結晶性係更進一步的提升，而能夠使MR比更加增大。
[專利文獻1]日本特開2011-058073號公報
本發明，係為基於以上之知識所進行者，並以提供一種能夠將使結晶性作了更進一步的提升之絕緣物膜以良好的膜厚分布均一性來成膜之濺鍍裝置一事，作為課題。
為了解決上述課題，本發明之濺鍍裝置，其特徵為：係在設置有絕緣物靶之真空腔內，具備有與此絕
緣物靶相對向而保持應處理之基板的平台，並設置有將平台作旋轉驅動之驅動手段、和對於絕緣物靶投入高頻電力之濺鍍電源、以及將稀有氣體導入至真空腔內之氣體導入手段，將基板與絕緣物靶之濺鍍面之間的間隔，設定為40mm~150mm之範圍內。另外，作為絕緣物靶，最理想係使用氧化鎂製之靶，但是，係亦可使用具備有岩鹽型構造之氧化鈣、氧化鋇、氧化鍶以及氧化鋯一般之氧化物靶，或者是如同氟化鎂、氟化鈣、氟化鋇、氟化鍶以及氟化鋯一般之氟化物靶。
若依據本發明，則藉由採用將在藉由高頻濺鍍來成膜絕緣物膜時的所謂T-S間距離設定為40mm~150mm之範圍內的構成，從靶所飛散出之濺鍍粒子中的主要為絕緣物(氧化物)之中性粒子，係在保持有此濺鍍粒子所具有的(濺鍍)能量之狀態下而到達基板處，其結果，藉由濺鍍粒子之遷移，係能夠得到使絕緣物固有之結晶性作了更進一步的提升之絕緣物膜，並且，係確認到，若是將此作為MTJ元件之穿隧障壁層來使用，則係能夠使MR比更加增大。另外，若是T-S間距離成為較150mm而更大，則係無法得到結晶性為佳之絕緣物膜。又，若是將投入至絕緣物靶中的高頻電力降低，則會成為使濺鍍粒子所具有的能量降低，而並不理想。進而，較理想，濺鍍時之真空腔內的壓力，係設為0.1~0.2Pa之範圍內而成為較先前技術例更高，並藉由將靶電位降低，來降低起因於負離子所導致的對於膜之損傷，同時，亦藉由將T-S間距
離拉近，而將起因於濺鍍粒子之對於基板的碰撞所導致的能量之減少抑制在最小限度。
在本發明中，較理想，前述絕緣物靶，係藉由較前述基板之面積而更小之至少2枚的靶材所構成，該些靶材，係在與被保持於平台上之基板相平行的同一平面內，分別從該基板之中心有所偏移地而被作配置，藉由此，藉由將對於此些之至少2枚的靶分別進行濺鍍而在基板表面上成膜時的膜厚分布作加總，係成為能夠將在絕緣物膜之成膜中所要求的於基板(例如，
300mm之矽晶圓)面內的膜厚分布調整為未滿1σ1%。
又，在本發明中，較理想，係更進而具備有：被配置於前述平面內之具有去疵作用的金屬製之其他之靶、和對於此其他之靶投入直流電力之其他之濺鍍電源。若依據此，則藉由對於其他之靶進行了濺鍍時的去疵效果，係能夠在絕緣物膜的成膜之前而盡可能迅速地將真空腔內之壓力降低至5×10-7Pa程度，而能夠以良好之量產性來得到使絕緣物固有之結晶性作了更進一步的提升之絕緣物膜。於此情況，為了防止在各靶之間的所謂交叉污染，較理想，係具備有將前述絕緣物靶和前述其他之靶之間的基板側之面選擇性地作遮蔽之遮蔽手段。
SM‧‧‧濺鍍裝置
W‧‧‧基板
1‧‧‧真空腔
2‧‧‧平台
3‧‧‧驅動手段
4‧‧‧絕緣物靶(氧化鎂製之靶)
4a、4b‧‧‧靶材
E1‧‧‧濺鍍電源
6‧‧‧其他之靶
E2‧‧‧其他之濺鍍電源
7a‧‧‧遮蔽手段
[圖1]對於本發明之實施形態的濺鍍裝置之構成作說
明的示意圖。
[圖2]對於靶和遮蔽手段間的平面觀察下之位置關係作展示之示意圖。
[圖3]針對對於本發明之效果作確認的實驗結果作展示之圖表。
[圖4]針對對於本發明之效果作確認的實驗結果作展示之圖表。
[圖5]針對對於本發明之效果作確認的實驗結果作展示之圖表。
以下，參考圖面，將基板W設為
300mm之矽晶圓，並將絕緣物靶4設為氧化鎂製之靶，而以在此基板表面上成膜身為絕緣物膜之氧化鎂膜的情況為例，來對於本發明之濺鍍裝置的實施形態作說明。以下，對於「上」、「下」之類之方向作標示的用語，係以圖1為基準來作說明。
參考圖1，SM，係為本實施形態之真空處理裝置，濺鍍裝置SM，係具備有區劃出處理室10之真空腔1。在真空腔1之底壁處，係經由排氣管11而被連接有真空幫浦12，並構成為能夠一直真空抽氣至成為特定壓力(例如10-6Pa)為止。在真空腔1之側壁處，係被連接有從圖外之氣體源而來的氣體導入管13，並成為能夠將藉由質量流控制器14來作了流量控制的稀有氣體導入至真
空腔1中。此些之氣體導入管13以及質量流控制器14，係構成本發明之「氣體導入手段」。於此情況，較理想，濺鍍時之真空腔1內的壓力，係被設定為0.02~0.2Pa之範圍內，而能夠降低後述之靶電位，並且能夠抑制起因於濺鍍粒子之對於基板W的碰撞所導致之能量的減少。
在處理室10之下部，係被設置有保持基板W的平台2。在平台2處，係被連結有貫通真空腔1之底壁而突出設置於處理室10內的作為驅動手段之馬達3之驅動軸31，在進行由濺鍍所致之成膜時，係成為能夠以基板W之中心作為旋轉中心而以特定之旋轉速度來進行旋轉驅動。又，與平台2相對向地，在真空腔1之上部處，係以面臨處理室10的方式而被配置有氧化鎂製之靶4。另外，亦可在平台2處連接其他之高頻電源，並在成膜時對於平台2投入特定之偏壓電力。
氧化鎂製之靶4，係藉由以周知之方法所製作出的較基板W之面積而更小之至少2枚(在本實施形態中係為2枚)的平面觀察時成圓形之靶材4a、4b所構成。於此情況，兩靶材4a、4b之未使用時的下面(濺鍍面)之面積，係對於濺鍍時之濺鍍粒子的飛散分布和基板W之成膜面的面積等作考慮而適宜設定，並使兩靶材4a、4b之中心線Ct1、Ct2從被保持在平台2上之基板W的中心線Cs起分別朝向徑方向外側作偏移，而配置之。於此情況，其中一方之靶材4a，係因應於靶材4a、4b之未使用時的下面之面積來以使其之一部分會從基板W之
外周來突出於外側的方式，而設定其之偏移量d1，並以此作為基準，來對於當在基板W上成膜氧化鎂膜時的膜厚分布作考慮並設定另外一方之靶材4b的偏移量d2。又，兩靶材4a、4b之未使用時的下面與基板W之間的所謂T-S間距離d3，係被設定為40mm~150mm之範圍內。若是T-S間距離ds成為較150mm而更大，則係無法得到結晶性為佳之氧化鎂膜。T-S間距離d3的下限，係對於放電空間之確保以及後述之遮蔽手段7a、7b的遮蔽板73之移動空間與基板W之搬送空間等作考慮而進行設定，例如係可設定為上述之40mm。
兩靶材4a、4b，係經由省略圖示之銦或錫等的接合材，來接合在當成膜時而使靶材4a、4b冷卻的銅製之背板41上，並以於此狀態下而兩靶材4a、4b之未使用時的下面會位置於與基板W相平行之同一平面內的方式，來隔著絕緣板I而安裝於真空腔1之上部。又，在兩靶材4a、4b之上方，係分別設置有在靶2之下方空間中而產生隧道狀之漏洩磁場(未圖示)的磁鐵單元5、5。於此情況，磁鐵單元5、5，由於係能夠利用周知之形態的磁鐵單元，因此，係省略詳細之說明，但是，較理想，係以使在靶材4a、4b之下面(濺鍍面)處的磁場之水平方向成分的磁場強度會成為1000G~4000G之範圍的方式來作設定。在兩靶材4a、4b處，係被連接有從身為濺鍍電源之周知之構造的高頻電源E1、E1而來之輸出，而成為在濺鍍時能夠投入特定頻率(例如，13.56MHz)之電
力。於此情況，較理想，所投入的高頻電力，係被設定為0.1kW~0.6kW之範圍內，而使靶電位增大。若是高頻電力為較0.1kW更低，則會成為使濺鍍粒子所具有的能量降低，而並不理想。又，在真空腔1內，係被設置有上下之防附著板8u、8d、9，而防止濺鍍粒子附著在真空腔1之內壁面上。
又，亦參考圖2，在真空腔1之上部，係以會位置在與兩靶材4a、4b之下面同一平面內並且面臨處理室10的方式，而被配置有鈦製之其他之靶6。其他之靶6，雖並未特別作圖示說明，但是，係與上述靶材4a、4b相同的，經由接合材來接合在背板上，並於此狀態下隔著絕緣板I而安裝於真空腔1之上部，且被連接有從其他之身為濺鍍電源之周知之構造的DC電源(其他之濺鍍電源)E2而來的輸出。藉由在進行靶材4a、4b之濺鍍之前先對於靶6進行濺鍍並在防附著板8u、8d、9等處形成鈦膜，係成為能夠藉由此鈦膜的去疵效果，而盡可能迅速地將處理室10內之壓力降低至5×10-7Pa程度。
又，在真空腔1之上部，係被設置有2個的遮蔽手段7a、7b。各遮蔽手段7a、7b，係具備有相同的構成，並由馬達等之驅動源71、和貫通真空腔1之上壁而突出設置於處理室10內之驅動軸72、和被連結於驅動軸72之下端並具有能夠將兩靶材4a、4b以及其他之靶6完全作覆蓋的面積之遮蔽板73，而構成之。
在對於兩靶材4a、4b進行濺鍍的情況時，遮
蔽手段7a、7b之兩遮蔽板73，係如同在圖2中以假想線所示一般，被移動至從兩靶材4a、4b之下方而作了分離的退避位置處，此時，係成為藉由其中一個的遮蔽手段7b之遮蔽板73而將其他之靶6完全作覆蓋。又，在對於其他之靶6進行濺鍍的情況時，遮蔽手段7a、7b之兩遮蔽板73，係如同在圖2中以實線所示一般，被移動至兩靶材4a、4b之下方的遮蔽位置處，此時，係成為藉由兩遮蔽板73而將兩靶材4a、4b完全作覆蓋。藉由此，係能夠有效地防止兩靶材4a、4b與其他之靶6之間的所謂交叉污染的情形。驅動源71之動作、真空幫浦12之動作、氣體導入或電力投入等之濺鍍裝置SM之動作，係成為藉由圖外之控制單元而被作統籌控制。
若依據以上之實施形態，則當對於兩靶材4a、4b而藉由上述之各條件來進行了濺鍍時，從兩靶材4a、4b所分別飛散出之濺鍍粒子中的主要為MgO之中性粒子，係在使此濺鍍粒子所具有的(濺鍍)能量作了保持的狀態下而到達基板W處，其結果，則藉由濺鍍粒子之遷移(migration)，係能夠得到使氧化鎂所固有之岩鹽型構造之結晶性作了更進一步的提升之氧化鎂膜。並且，藉由採用具備有鈦或鉭製之其他之靶6並且例如能夠在對於基板W之氧化鎂膜的成膜之前而先對於其他之靶6進行濺鍍的構成，由於係能夠在盡可能迅速地將處理室10內之壓力降低至5×10-7Pa程度之後，再進行對於基板W之氧化鎂膜的成膜，因此係能夠以良好之量產性來得到使岩
鹽型構造之結晶性作了更進一步的提升之氧化鎂膜。進而，藉由在防附著板上而將金屬材料作一定量的成膜，係能夠確保RF濺鍍之陽極面，而能夠維持安定的RF濺鍍。又，若是將如同上述一般所成膜之物作為MTJ元件之穿隧障壁層來使用，則係能夠使MR比更加增大。進而，藉由將對於兩靶材4a、4b分別進行濺鍍而在基板W表面上成膜時的膜厚分布作加總，係成為能夠將在氧化鎂膜之成膜中所要求的於基板(例如，
300mm之矽晶圓)面內的膜厚分布調整為未滿1σ1%。
接著，為了確認本發明之效果，係使用圖1中所示之濺鍍裝置而進行了以下的實驗。在實驗1中，作為基板W，係使用
300mm之矽晶圓，作為靶材4a、4b，係分別使用
165mm者。又，作為濺鍍條件，係以使濺鍍時之處理室10內的壓力成為0.1Pa的方式來對於氬氣之導入量和真空幫浦之排氣速度作設定，並將從高頻電源E1而來之投入電力設定為0.50kW。又，係將靶材4a之中心線Ct1和基板W之中心線Cs之間的間隔d1固定為80mm，並一面使靶材4b之中心線Ct2和基板W之中心線Cs之間的間隔d2作改變，一面將氧化鎂膜作了成膜。
圖3，係為對於當使間隔d2在150mm~200mm的範圍內而一次作10mm的改變並成膜了氧化鎂膜時的膜厚分布之傾向作展示之圖表。若依據此，則係確認到：當將間隔d1固定為80mm的情況時，若是將間隔d2設定為165~200mm的範圍內，則係能夠以使於基板面內
的膜厚分布成為未滿1σ1%的方式來進行成膜。進而，係確認到：若是將間隔d2設定為170~180mm的範圍內，則係能夠將於基板面內的膜厚分布調整為未滿1σ0.5%。
接著，在實驗2中，係在基板W上以1.0nm之膜厚而成膜了CoFeB膜，之後，使用圖1中所示之濺鍍裝置而以0.8nm之膜厚來成膜氧化鎂膜，並進而以1.2nm之膜厚而成膜CoFeB，且對於磁阻變化率作了測定。於此情況，作為基板W，係使用
300mm之矽晶圓，作為靶材4a、4b，係分別使用
165mm者，將靶材4a之中心線Ct1和基板W之中心線Cs之間的間隔d1固定為80mm，並將靶材4b之中心線Ct2和基板W之中心線Cs之間的間隔d2設定為180mm，關於其他之濺鍍條件，則係設為與實驗1相同。又，係將所謂的T-S間距離d3，設定為300mm之長距離、和身為較此長距離之1/2的150nm而更短之短距離。
圖4，係為對於當使T-S間距離改變並成膜了氧化鎂膜時的正規化後之MR比(磁阻變化率)作展示之圖表。若依據此，則係確認到；藉由將T-S間距離設定為短距離，相較於T-S間距離為300mm之長距離(相當於先前技術例)的情況，係能夠使MR比增大。藉由此，係可得知，藉由將T-S間距離設定為短距離，係能夠得到使結晶性作了更進一步的提升之氧化鎂膜。
圖5，係為對於當調整從靶材4a、4b所濺鍍而來之成膜量並成膜了氧化鎂膜時的膜厚分布之傾向作展
示之圖表。若依據此，則係確認到：當從靶材4a而來之成膜量相較於從靶材4b而來之成膜量而為較多的情況時，係成為如同以一點鍊線所示一般之下凸的分布傾向，膜厚分布係成為1σ1.86%，另一方面，當從靶材4b而來之成膜量相較於從靶材4a而來之成膜量而為較多的情況時，係成為如同以實線所示一般之上凸的分布傾向，膜厚分布係成為1σ2.81%。係確認到：藉由將從此些之靶材4a、4b而來的成膜量決定為最適當的平衡度，係能夠將膜厚分度調整為未滿1σ1%(0.47%)。
以上，雖係針對本發明之實施形態作了說明，但是，本發明係不被上述實施形態所限定，在不脫離本發明之範圍內，係可作各種之變更。例如，作為其他之靶6，係不僅是鈦製者，而亦可使用鉭製者。又，絕緣物靶4，係並不被限定於上述之氧化鎂製之靶，亦可使用具備有岩鹽型構造之氧化鈣、氧化鋇、氧化鍶以及氧化鋯一般之氧化物靶，或者是如同氟化鎂、氟化鈣、氟化鋇、氟化鍶以及氟化鋯一般之氟化物靶。
SM‧‧‧濺鍍裝置
W‧‧‧基板
1‧‧‧真空腔
2‧‧‧平台
3‧‧‧驅動手段
4‧‧‧絕緣物靶(氧化鎂製之靶)
4a、4b‧‧‧靶材
5‧‧‧磁鐵單元
7a、7b‧‧‧遮蔽手段
8u、8d、9‧‧‧防附著板
10‧‧‧處理室
11‧‧‧排氣管
12‧‧‧真空幫浦
13‧‧‧氣體導入管
14‧‧‧質量流控制器
31‧‧‧驅動軸
41‧‧‧背板
71‧‧‧驅動源
72‧‧‧驅動軸
73‧‧‧遮蔽板
E1‧‧‧濺鍍電源
d1、d2‧‧‧偏移量
d3‧‧‧T-S間距離
Cs‧‧‧基板W之中心線
Ct1‧‧‧靶材4a之中心線
Ct2‧‧‧靶材4b之中心線
Claims (3)
- 一種濺鍍裝置，其特徵為：係在設置有氧化鎂靶之真空腔內，具備有與此氧化鎂靶相對向而保持應處理之基板的平台，並設置有將平台作旋轉驅動之驅動手段、和對於氧化鎂靶投入高頻電力之濺鍍電源、以及將稀有氣體導入至真空腔內之氣體導入手段，將基板與氧化鎂靶之濺鍍面之間的間隔，設定為40mm~150mm之範圍內，前述氧化鎂靶，係藉由較前述基板之面積而更小之至少2枚的靶材所構成，該些靶材，係在與被保持於平台上之基板相平行的同一平面內，從該基板之中心分別以相異之偏移量而被作配置。
- 如申請專利範圍第1項所記載之濺鍍裝置，其中，前述氧化鎂靶，係藉由2枚的靶材所構成，其中一方之靶材之偏移量，係被設定為另外一方之靶材之偏移量的2.06~2.50倍。
- 如申請專利範圍第1項所記載之濺鍍裝置，其中，前述氧化鎂靶，係藉由2枚的靶材所構成，其中一方之靶材之偏移量，係被設定為另外一方之靶材之偏移量的2.13~2.25倍。
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| EP (1) | EP3199661A4 (zh) |
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| JP7000083B2 (ja) * | 2017-09-07 | 2022-01-19 | 芝浦メカトロニクス株式会社 | 成膜装置 |
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| JP2000038664A (ja) * | 1998-07-21 | 2000-02-08 | Ulvac Japan Ltd | 絶縁膜形成方法 |
| JP2010285647A (ja) * | 2009-06-10 | 2010-12-24 | Olympus Corp | 成膜装置及び成膜方法 |
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| US4591417A (en) * | 1983-12-27 | 1986-05-27 | Ford Motor Company | Tandem deposition of cermets |
| WO2009044473A1 (ja) * | 2007-10-04 | 2009-04-09 | Canon Anelva Corporation | 高周波スパッタリング装置 |
| JP5101266B2 (ja) * | 2007-12-21 | 2012-12-19 | 株式会社アルバック | 磁気デバイスの製造方法 |
| JP5442367B2 (ja) * | 2009-09-11 | 2014-03-12 | 株式会社アルバック | 薄膜形成方法及び薄膜形成装置 |
| US20130048494A1 (en) * | 2010-03-29 | 2013-02-28 | Ulvac, Inc. | Sputtering device |
| JP2012219330A (ja) * | 2011-04-08 | 2012-11-12 | Ulvac Japan Ltd | 相変化メモリの形成装置、及び相変化メモリの形成方法 |
| JP5731085B2 (ja) * | 2013-02-05 | 2015-06-10 | キヤノンアネルバ株式会社 | 成膜装置 |
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- 2015-07-15 CN CN201580047418.0A patent/CN106715749B/zh active Active
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| JP2000038664A (ja) * | 1998-07-21 | 2000-02-08 | Ulvac Japan Ltd | 絶縁膜形成方法 |
| JP2010285647A (ja) * | 2009-06-10 | 2010-12-24 | Olympus Corp | 成膜装置及び成膜方法 |
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| KR20170060110A (ko) | 2017-05-31 |
| US20180057928A1 (en) | 2018-03-01 |
| WO2016047013A1 (ja) | 2016-03-31 |
| SG11201701789PA (en) | 2017-04-27 |
| EP3199661A1 (en) | 2017-08-02 |
| JP6379208B2 (ja) | 2018-08-22 |
| CN106715749B (zh) | 2019-02-12 |
| CN106715749A (zh) | 2017-05-24 |
| JPWO2016047013A1 (ja) | 2017-07-27 |
| TW201612344A (en) | 2016-04-01 |
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