JP6335386B2 - カソードアッセンブリ - Google Patents
カソードアッセンブリ Download PDFInfo
- Publication number
- JP6335386B2 JP6335386B2 JP2017509243A JP2017509243A JP6335386B2 JP 6335386 B2 JP6335386 B2 JP 6335386B2 JP 2017509243 A JP2017509243 A JP 2017509243A JP 2017509243 A JP2017509243 A JP 2017509243A JP 6335386 B2 JP6335386 B2 JP 6335386B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- backing plate
- shield plate
- plate
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004544 sputter deposition Methods 0.000 claims description 28
- 230000002093 peripheral effect Effects 0.000 claims description 18
- 239000010408 film Substances 0.000 description 17
- 239000002245 particle Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
い。
Claims (5)
- 絶縁物製のターゲットと、このターゲットの一方の面に接合されるバッキングプレートと、バッキングプレートのターゲット側を下として、ターゲットの外周端より外方に延出したバッキングプレートの下側の延出部分に対向配置される環状のシールド板とを備えるスパッタリング装置用のカソードアッセンブリにおいて、
バッキングプレートは延出部分に対して凸設された接合部を有し、この接合部にターゲットを接合した状態で接合部から外方に張り出したターゲットの張出部分と、バッキングプレートの延出部分との間の隙間に、シールド板の内周縁部を位置させ、
前記シールド板と前記バッキングプレートとの間の隙間の長さ及び前記シールド板と前記ターゲットとの間の隙間の長さが、0.5mm〜2mmの範囲に夫々設定されることを特徴とするカソードアッセンブリ。 - 絶縁物製のターゲットと、このターゲットの一方の面に接合されるバッキングプレートと、バッキングプレートのターゲット側を下として、ターゲットの外周端より外方に延出したバッキングプレートの下側の延出部分に対向配置される環状のシールド板とを備えるスパッタリング装置用のカソードアッセンブリにおいて、
バッキングプレートは延出部分に対して凸設された接合部を有し、この接合部にターゲットを接合した状態で接合部から外方に張り出したターゲットの張出部分と、バッキングプレートの延出部分との間の隙間に、シールド板の内周縁部を位置させ、前記シールド板が複数の部分に分割可能であることを特徴とするカソードアッセンブリ。 - 前記ターゲットの張出部分とシールド板が重複して相対する部分の長さは、前記ターゲットの厚さ以上であることを特徴とする請求項1又は2記載のカソードアッセンブリ。
- 前記シールド板の内周縁部は、前記隙間において前記ターゲットの張出部分の中間点よりも前記接合部側に位置することを特徴とする請求項1〜3のいずれか1項記載のカソードアッセンブリ。
- 前記シールド板と前記バッキングプレートとの間の隙間の長さ及び前記シールド板と前記ターゲットとの間の隙間の長さが、0.5mm〜2mmの範囲に夫々設定されることを特徴とする請求項2記載のカソードアッセンブリ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015071607 | 2015-03-31 | ||
JP2015071607 | 2015-03-31 | ||
PCT/JP2016/001461 WO2016157771A1 (ja) | 2015-03-31 | 2016-03-15 | カソードアッセンブリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016157771A1 JPWO2016157771A1 (ja) | 2017-07-06 |
JP6335386B2 true JP6335386B2 (ja) | 2018-05-30 |
Family
ID=57004143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017509243A Active JP6335386B2 (ja) | 2015-03-31 | 2016-03-15 | カソードアッセンブリ |
Country Status (6)
Country | Link |
---|---|
US (1) | US10100399B2 (ja) |
JP (1) | JP6335386B2 (ja) |
KR (1) | KR101994343B1 (ja) |
CN (1) | CN107109632A (ja) |
TW (1) | TWI622660B (ja) |
WO (1) | WO2016157771A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7317734B2 (ja) | 2019-02-15 | 2023-07-31 | ゼロックス コーポレイション | 高周波識別(rfid)ラベル又は伝導性トレース熱転写印刷方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW202119873A (zh) * | 2019-07-16 | 2021-05-16 | 美商應用材料股份有限公司 | 用於增強電漿控制的em源 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63297554A (ja) * | 1987-05-29 | 1988-12-05 | Seiko Epson Corp | 薄膜形成方法 |
JP2001316798A (ja) * | 2000-05-09 | 2001-11-16 | Toshiba Corp | ターゲット装置およびそれを用いたスパッタリング装置 |
JP4336206B2 (ja) * | 2004-01-07 | 2009-09-30 | Hoya株式会社 | マスクブランクの製造方法、及びマスクブランク製造用スパッタリングターゲット |
JP2009187682A (ja) | 2008-02-01 | 2009-08-20 | Ulvac Japan Ltd | カソード電極の製造方法及び薄膜固体リチウムイオン2次電池の製造方法 |
JP5414340B2 (ja) | 2009-04-24 | 2014-02-12 | 株式会社アルバック | スパッタリング方法 |
US20130277203A1 (en) * | 2012-04-24 | 2013-10-24 | Applied Materials, Inc. | Process kit shield and physical vapor deposition chamber having same |
US9633824B2 (en) * | 2013-03-05 | 2017-04-25 | Applied Materials, Inc. | Target for PVD sputtering system |
JP2015030858A (ja) * | 2013-07-31 | 2015-02-16 | 株式会社アルバック | スパッタリングターゲットの製造方法 |
-
2016
- 2016-03-15 WO PCT/JP2016/001461 patent/WO2016157771A1/ja active Application Filing
- 2016-03-15 US US15/507,816 patent/US10100399B2/en active Active
- 2016-03-15 JP JP2017509243A patent/JP6335386B2/ja active Active
- 2016-03-15 KR KR1020177023623A patent/KR101994343B1/ko active IP Right Grant
- 2016-03-15 CN CN201680003515.4A patent/CN107109632A/zh active Pending
- 2016-03-22 TW TW105108837A patent/TWI622660B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7317734B2 (ja) | 2019-02-15 | 2023-07-31 | ゼロックス コーポレイション | 高周波識別(rfid)ラベル又は伝導性トレース熱転写印刷方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201704507A (zh) | 2017-02-01 |
JPWO2016157771A1 (ja) | 2017-07-06 |
US20170283941A1 (en) | 2017-10-05 |
US10100399B2 (en) | 2018-10-16 |
KR101994343B1 (ko) | 2019-06-28 |
CN107109632A (zh) | 2017-08-29 |
KR20170105613A (ko) | 2017-09-19 |
WO2016157771A1 (ja) | 2016-10-06 |
TWI622660B (zh) | 2018-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6171108B2 (ja) | 成膜装置及び成膜方法 | |
TWI686492B (zh) | 磁控管濺鍍裝置 | |
TWI641710B (zh) | Target assembly | |
JP6335386B2 (ja) | カソードアッセンブリ | |
JP6342497B2 (ja) | ターゲットアッセンブリ | |
US20160168687A1 (en) | Particle reduction in a deposition chamber using thermal expansion coefficient compatible coating | |
KR101827472B1 (ko) | 절연물 타겟 | |
TWI509097B (zh) | Sputtering device | |
JP5265309B2 (ja) | スパッタリング方法 | |
JP6636796B2 (ja) | スパッタリング装置及びスパッタリング方法 | |
JP2018135575A (ja) | スパッタリング装置 | |
JP2016211040A (ja) | ターゲットアッセンブリ、スパッタリング装置並びにターゲット材の使用限界判定方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180109 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180307 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180327 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180404 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180417 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180427 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6335386 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |