JP5914786B1 - 絶縁物ターゲット - Google Patents
絶縁物ターゲット Download PDFInfo
- Publication number
- JP5914786B1 JP5914786B1 JP2015562974A JP2015562974A JP5914786B1 JP 5914786 B1 JP5914786 B1 JP 5914786B1 JP 2015562974 A JP2015562974 A JP 2015562974A JP 2015562974 A JP2015562974 A JP 2015562974A JP 5914786 B1 JP5914786 B1 JP 5914786B1
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- shield
- insulator
- target material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000012212 insulator Substances 0.000 title claims abstract description 29
- 238000004544 sputter deposition Methods 0.000 claims abstract description 48
- 239000013077 target material Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 44
- 230000002093 peripheral effect Effects 0.000 claims abstract description 14
- 238000005477 sputtering target Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 9
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 7
- 239000000395 magnesium oxide Substances 0.000 description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/082—Oxides of alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (3)
- スパッタリング装置用の絶縁物ターゲットであって、この絶縁物ターゲットのスパッタリング装置への組付時、その周囲にシールドが配置されるものにおいて、
絶縁物ターゲットは、シールドで囲まれる板状のターゲット材と、ターゲット材の一方の面がスパッタリングされるスパッタ面とし、ターゲット材の他方の面の外周縁部に接合され、ターゲット材の周面から外方に延出されると共にシールドから所定間隔を存する延出部を有する環状の支持材とを備え、
支持材は、絶縁物ターゲットに交流電力を投入してスパッタ面がスパッタリングされるとき、ターゲット材のインピーダンスと同等以上のインピーダンスを持つように構成されることを特徴とする絶縁物製スパッタリングターゲット。 - ターゲット材と支持材とが同一材料で形成され、支持材は、ターゲット材の板厚と同等以上の肉厚を有することを特徴とする請求項1記載の絶縁物製スパッタリングターゲット。
- ターゲット材と支持材とが異なる材料で形成されていることを特徴とする請求項1記載の絶縁物製スパッタリングターゲット。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014141680 | 2014-07-09 | ||
JP2014141680 | 2014-07-09 | ||
PCT/JP2015/002792 WO2016006155A1 (ja) | 2014-07-09 | 2015-06-02 | 絶縁物ターゲット |
Publications (2)
Publication Number | Publication Date |
---|---|
JP5914786B1 true JP5914786B1 (ja) | 2016-05-11 |
JPWO2016006155A1 JPWO2016006155A1 (ja) | 2017-04-27 |
Family
ID=55063815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015562974A Active JP5914786B1 (ja) | 2014-07-09 | 2015-06-02 | 絶縁物ターゲット |
Country Status (7)
Country | Link |
---|---|
US (1) | US20170178875A1 (ja) |
JP (1) | JP5914786B1 (ja) |
KR (2) | KR101827472B1 (ja) |
CN (1) | CN105408515A (ja) |
SG (1) | SG11201600348XA (ja) |
TW (1) | TW201612341A (ja) |
WO (1) | WO2016006155A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023112155A1 (ja) * | 2021-12-14 | 2023-06-22 | 日新電機株式会社 | スパッタリング装置 |
WO2023141145A1 (en) * | 2022-01-21 | 2023-07-27 | Applied Materials, Inc. | Composite pvd targets |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08213319A (ja) * | 1995-02-06 | 1996-08-20 | Sony Corp | スパッター装置 |
JPH11503793A (ja) * | 1995-02-17 | 1999-03-30 | マテリアルズ リサーチ コーポレーション | 機械的に取り付けられたスパッタリングターゲットとアダプタ |
US6497797B1 (en) * | 2000-08-21 | 2002-12-24 | Honeywell International Inc. | Methods of forming sputtering targets, and sputtering targets formed thereby |
JP2010501045A (ja) * | 2006-08-14 | 2010-01-14 | ハネウェル・インターナショナル・インコーポレーテッド | Pvdターゲットの新規な製造設計と加工方法及び加工装置 |
JP2011518258A (ja) * | 2008-04-21 | 2011-06-23 | ハネウェル・インターナショナル・インコーポレーテッド | Dcマグネトロンスパッタリングシステムの設計および使用 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4270669B2 (ja) * | 1999-08-27 | 2009-06-03 | 株式会社アルバック | 強磁性体のマグネトロンスパッタ方法および装置 |
JP2002220660A (ja) * | 2001-01-26 | 2002-08-09 | Seiko Epson Corp | スパッタリング装置 |
JP5399165B2 (ja) * | 2008-11-17 | 2014-01-29 | 富士フイルム株式会社 | 成膜方法、成膜装置、圧電体膜、圧電素子、液体吐出装置、及び圧電型超音波振動子 |
-
2015
- 2015-06-02 KR KR1020167012700A patent/KR101827472B1/ko active IP Right Grant
- 2015-06-02 SG SG11201600348XA patent/SG11201600348XA/en unknown
- 2015-06-02 KR KR1020177015291A patent/KR20170068614A/ko active Application Filing
- 2015-06-02 US US15/324,430 patent/US20170178875A1/en not_active Abandoned
- 2015-06-02 CN CN201580001472.1A patent/CN105408515A/zh active Pending
- 2015-06-02 JP JP2015562974A patent/JP5914786B1/ja active Active
- 2015-06-02 WO PCT/JP2015/002792 patent/WO2016006155A1/ja active Application Filing
- 2015-06-04 TW TW104118161A patent/TW201612341A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08213319A (ja) * | 1995-02-06 | 1996-08-20 | Sony Corp | スパッター装置 |
JPH11503793A (ja) * | 1995-02-17 | 1999-03-30 | マテリアルズ リサーチ コーポレーション | 機械的に取り付けられたスパッタリングターゲットとアダプタ |
US6497797B1 (en) * | 2000-08-21 | 2002-12-24 | Honeywell International Inc. | Methods of forming sputtering targets, and sputtering targets formed thereby |
JP2010501045A (ja) * | 2006-08-14 | 2010-01-14 | ハネウェル・インターナショナル・インコーポレーテッド | Pvdターゲットの新規な製造設計と加工方法及び加工装置 |
JP2011518258A (ja) * | 2008-04-21 | 2011-06-23 | ハネウェル・インターナショナル・インコーポレーテッド | Dcマグネトロンスパッタリングシステムの設計および使用 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2016006155A1 (ja) | 2017-04-27 |
US20170178875A1 (en) | 2017-06-22 |
CN105408515A (zh) | 2016-03-16 |
KR20160071452A (ko) | 2016-06-21 |
SG11201600348XA (en) | 2016-02-26 |
WO2016006155A1 (ja) | 2016-01-14 |
KR20170068614A (ko) | 2017-06-19 |
KR101827472B1 (ko) | 2018-02-08 |
TW201612341A (en) | 2016-04-01 |
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