SG11201600348XA - Insulator target - Google Patents

Insulator target

Info

Publication number
SG11201600348XA
SG11201600348XA SG11201600348XA SG11201600348XA SG11201600348XA SG 11201600348X A SG11201600348X A SG 11201600348XA SG 11201600348X A SG11201600348X A SG 11201600348XA SG 11201600348X A SG11201600348X A SG 11201600348XA SG 11201600348X A SG11201600348X A SG 11201600348XA
Authority
SG
Singapore
Prior art keywords
insulator target
insulator
target
Prior art date
Application number
SG11201600348XA
Inventor
Shinji Kohari
Hiroki Yamamoto
Yoji Taguchi
Takahiro Nanba
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of SG11201600348XA publication Critical patent/SG11201600348XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/082—Oxides of alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
SG11201600348XA 2014-07-09 2015-06-02 Insulator target SG11201600348XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014141680 2014-07-09
PCT/JP2015/002792 WO2016006155A1 (en) 2014-07-09 2015-06-02 Insulating material target

Publications (1)

Publication Number Publication Date
SG11201600348XA true SG11201600348XA (en) 2016-02-26

Family

ID=55063815

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201600348XA SG11201600348XA (en) 2014-07-09 2015-06-02 Insulator target

Country Status (7)

Country Link
US (1) US20170178875A1 (en)
JP (1) JP5914786B1 (en)
KR (2) KR20170068614A (en)
CN (1) CN105408515A (en)
SG (1) SG11201600348XA (en)
TW (1) TW201612341A (en)
WO (1) WO2016006155A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023112155A1 (en) * 2021-12-14 2023-06-22 日新電機株式会社 Sputtering apparatus
WO2023141145A1 (en) * 2022-01-21 2023-07-27 Applied Materials, Inc. Composite pvd targets

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213319A (en) * 1995-02-06 1996-08-20 Sony Corp Sputtering device
US5529673A (en) * 1995-02-17 1996-06-25 Sony Corporation Mechanically joined sputtering target and adapter therefor
JP4270669B2 (en) * 1999-08-27 2009-06-03 株式会社アルバック Method and apparatus for magnetron sputtering of ferromagnetic material
US6497797B1 (en) * 2000-08-21 2002-12-24 Honeywell International Inc. Methods of forming sputtering targets, and sputtering targets formed thereby
JP2002220660A (en) * 2001-01-26 2002-08-09 Seiko Epson Corp Sputtering apparatus
US20080041720A1 (en) * 2006-08-14 2008-02-21 Jaeyeon Kim Novel manufacturing design and processing methods and apparatus for PVD targets
JP5676429B2 (en) 2008-04-21 2015-02-25 ハネウェル・インターナショナル・インコーポレーテッド Design and use of DC magnetron sputtering system
JP5399165B2 (en) * 2008-11-17 2014-01-29 富士フイルム株式会社 Film formation method, film formation apparatus, piezoelectric film, piezoelectric element, liquid ejection apparatus, and piezoelectric ultrasonic transducer

Also Published As

Publication number Publication date
KR20160071452A (en) 2016-06-21
US20170178875A1 (en) 2017-06-22
KR101827472B1 (en) 2018-02-08
KR20170068614A (en) 2017-06-19
WO2016006155A1 (en) 2016-01-14
JPWO2016006155A1 (en) 2017-04-27
JP5914786B1 (en) 2016-05-11
CN105408515A (en) 2016-03-16
TW201612341A (en) 2016-04-01

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