TWI692542B - 電漿前級熱反應器系統 - Google Patents

電漿前級熱反應器系統 Download PDF

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Publication number
TWI692542B
TWI692542B TW104107225A TW104107225A TWI692542B TW I692542 B TWI692542 B TW I692542B TW 104107225 A TW104107225 A TW 104107225A TW 104107225 A TW104107225 A TW 104107225A TW I692542 B TWI692542 B TW I692542B
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TW
Taiwan
Prior art keywords
stage
plasma reactor
source
sub
exhaust gas
Prior art date
Application number
TW104107225A
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English (en)
Chinese (zh)
Other versions
TW201600623A (zh
Inventor
迪辛森柯林約翰
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201600623A publication Critical patent/TW201600623A/zh
Application granted granted Critical
Publication of TWI692542B publication Critical patent/TWI692542B/zh

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting
    • H01J37/32844Treating effluent gases
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02CCAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00Capture or disposal of greenhouse gases
    • Y02C20/30Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treating Waste Gases (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW104107225A 2014-03-06 2015-03-06 電漿前級熱反應器系統 TWI692542B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461949217P 2014-03-06 2014-03-06
US61/949,217 2014-03-06

Publications (2)

Publication Number Publication Date
TW201600623A TW201600623A (zh) 2016-01-01
TWI692542B true TWI692542B (zh) 2020-05-01

Family

ID=54016800

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104107225A TWI692542B (zh) 2014-03-06 2015-03-06 電漿前級熱反應器系統

Country Status (6)

Country Link
US (2) US20150252473A1 (enExample)
JP (1) JP2017510453A (enExample)
KR (1) KR102351585B1 (enExample)
CN (1) CN106029217A (enExample)
TW (1) TWI692542B (enExample)
WO (1) WO2015134156A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102477302B1 (ko) * 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
US10337105B2 (en) 2016-01-13 2019-07-02 Mks Instruments, Inc. Method and apparatus for valve deposition cleaning and prevention by plasma discharge
US10535506B2 (en) 2016-01-13 2020-01-14 Mks Instruments, Inc. Method and apparatus for deposition cleaning in a pumping line
KR102567720B1 (ko) * 2016-01-26 2023-08-17 주성엔지니어링(주) 기판 처리 장치
JP7008629B2 (ja) * 2016-01-26 2022-01-25 ジュスン エンジニアリング カンパニー リミテッド 基板処理装置
CN108701583B (zh) 2016-04-13 2023-12-01 应用材料公司 用于排气冷却的设备
CN109155233B (zh) * 2016-04-15 2023-05-23 应用材料公司 利用氧等离子体清洁循环的等离子体减量固体回避法
KR102204229B1 (ko) * 2016-08-26 2021-01-15 어플라이드 머티어리얼스, 인코포레이티드 저압 리프트 핀 캐비티 하드웨어
US10695713B2 (en) 2017-01-30 2020-06-30 Panasonic Intellectual Property Management Co., Ltd. Flux recovery device, and reflow apparatus and gas exchange method using the same
JP6606670B2 (ja) * 2017-01-30 2019-11-20 パナソニックIpマネジメント株式会社 フラックス回収装置およびリフロー装置ならびにフラックス回収装置における気体交換方法
US20180226234A1 (en) 2017-02-09 2018-08-09 Applied Materials, Inc. Plasma abatement technology utilizing water vapor and oxygen reagent
US10861681B2 (en) 2017-05-19 2020-12-08 Applied Materials, Inc. Apparatus for collection and subsequent reaction of liquid and solid effluent into gaseous effluent
GB2564399A (en) * 2017-07-06 2019-01-16 Edwards Ltd Improvements in or relating to pumping line arrangements
WO2019120358A1 (de) * 2017-12-21 2019-06-27 centrotherm international AG Verfahren zum betrieb einer abscheideanlage
US10889891B2 (en) * 2018-05-04 2021-01-12 Applied Materials, Inc. Apparatus for gaseous byproduct abatement and foreline cleaning
US11221182B2 (en) 2018-07-31 2022-01-11 Applied Materials, Inc. Apparatus with multistaged cooling
US11306971B2 (en) 2018-12-13 2022-04-19 Applied Materials, Inc. Heat exchanger with multistaged cooling
KR20220024833A (ko) * 2019-06-25 2022-03-03 어플라이드 머티어리얼스, 인코포레이티드 진공 포어라인에서의 입자 수집을 위한 고효율 트랩
TWI783382B (zh) * 2020-03-18 2022-11-11 日商國際電氣股份有限公司 基板處理裝置,排氣裝置及半導體裝置的製造方法
KR102300561B1 (ko) * 2020-07-31 2021-09-13 삼성전자주식회사 증착 시스템 및 공정 시스템
US11745229B2 (en) 2020-08-11 2023-09-05 Mks Instruments, Inc. Endpoint detection of deposition cleaning in a pumping line and a processing chamber
US11664197B2 (en) 2021-08-02 2023-05-30 Mks Instruments, Inc. Method and apparatus for plasma generation
KR20230083516A (ko) * 2021-12-03 2023-06-12 삼성전자주식회사 기판 처리 시스템, 및 이를 사용한 반도체 소자의 제조 방법
KR102490651B1 (ko) * 2022-08-18 2023-01-20 주식회사 미래보 반도체 공정 시 발생하는 반응부산물 포집 장치의 신속 교체를 통한 공정 정지 로스 감축 시스템
US12159765B2 (en) 2022-09-02 2024-12-03 Mks Instruments, Inc. Method and apparatus for plasma generation
KR20240115465A (ko) 2023-01-19 2024-07-26 삼성전자주식회사 플라즈마 소스를 갖는 배기가스 처리 장치 및 이를 포함하는 기판 처리 장치
US12455119B2 (en) 2023-04-10 2025-10-28 Applied Materials, Inc. Regenerator for foreline heating
KR102814486B1 (ko) * 2024-01-24 2025-05-29 주식회사 에이치피에스피 고압 기판 처리 장치 및 그에 사용되는 콜드 트랩

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3171593B2 (ja) * 1990-10-09 2001-05-28 東京エレクトロン株式会社 トラップ装置
JP2996524B2 (ja) 1991-03-18 2000-01-11 松下電子工業株式会社 ポリイミド硬化装置
JPH05195952A (ja) 1992-01-17 1993-08-06 Matsushita Electric Ind Co Ltd クライオパネル装置
US6045618A (en) * 1995-09-25 2000-04-04 Applied Materials, Inc. Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment
JPH115012A (ja) * 1997-06-16 1999-01-12 Kenji Inoue 排ガス処理方法および処理装置
JP2000026971A (ja) * 1998-07-10 2000-01-25 Kokusai Electric Co Ltd Cvd装置の排ガス処理装置
JP2000262841A (ja) * 1999-03-18 2000-09-26 Kokusai Electric Co Ltd トラップ装置及び半導体製造装置
US6291938B1 (en) 1999-12-31 2001-09-18 Litmas, Inc. Methods and apparatus for igniting and sustaining inductively coupled plasma
US6156667A (en) * 1999-12-31 2000-12-05 Litmas, Inc. Methods and apparatus for plasma processing
JP4549563B2 (ja) * 2001-03-22 2010-09-22 三菱電機株式会社 ハロゲン含有ガスの処理装置
US7060234B2 (en) * 2001-07-18 2006-06-13 Applied Materials Process and apparatus for abatement of by products generated from deposition processes and cleaning of deposition chambers
JP2005142377A (ja) * 2003-11-07 2005-06-02 Mitsubishi Heavy Ind Ltd クリーニングガスのリサイクルシステム
US20060090773A1 (en) 2004-11-04 2006-05-04 Applied Materials, Inc. Sulfur hexafluoride remote plasma source clean
GB0505674D0 (en) * 2005-03-22 2005-04-27 Boc Group Plc Trap device
US20090175771A1 (en) * 2006-03-16 2009-07-09 Applied Materials, Inc. Abatement of effluent gas
KR101041026B1 (ko) * 2008-09-01 2011-06-13 한국에너지기술연구원 공동형 플라즈마 토치, 플라즈마/가스 혼합형 연소장치 및이를 이용한 용융방법
US20100130017A1 (en) 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
GB0902234D0 (en) * 2009-02-11 2009-03-25 Edwards Ltd Method of treating an exhaust gas stream
US8747762B2 (en) * 2009-12-03 2014-06-10 Applied Materials, Inc. Methods and apparatus for treating exhaust gas in a processing system
US20110256734A1 (en) 2010-04-15 2011-10-20 Hausmann Dennis M Silicon nitride films and methods
CN203002192U (zh) * 2012-12-28 2013-06-19 成都老肯科技股份有限公司 一种过氧化氢等离子体灭菌器的废气分解装置

Also Published As

Publication number Publication date
JP2017510453A (ja) 2017-04-13
CN106029217A (zh) 2016-10-12
KR102351585B1 (ko) 2022-01-13
TW201600623A (zh) 2016-01-01
US20150252473A1 (en) 2015-09-10
WO2015134156A1 (en) 2015-09-11
US20190226083A1 (en) 2019-07-25
KR20160130261A (ko) 2016-11-10
US10920315B2 (en) 2021-02-16

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