TWI692542B - 電漿前級熱反應器系統 - Google Patents
電漿前級熱反應器系統 Download PDFInfo
- Publication number
- TWI692542B TWI692542B TW104107225A TW104107225A TWI692542B TW I692542 B TWI692542 B TW I692542B TW 104107225 A TW104107225 A TW 104107225A TW 104107225 A TW104107225 A TW 104107225A TW I692542 B TWI692542 B TW I692542B
- Authority
- TW
- Taiwan
- Prior art keywords
- stage
- plasma reactor
- source
- sub
- exhaust gas
- Prior art date
Links
- 239000007789 gas Substances 0.000 claims abstract description 175
- 238000012423 maintenance Methods 0.000 claims abstract description 52
- 238000001816 cooling Methods 0.000 claims description 21
- 238000010926 purge Methods 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 238000000746 purification Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 34
- 239000002245 particle Substances 0.000 abstract description 22
- 239000000463 material Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 230000003313 weakening effect Effects 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 7
- 238000002485 combustion reaction Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000009489 vacuum treatment Methods 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Treating Waste Gases (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461949217P | 2014-03-06 | 2014-03-06 | |
| US61/949,217 | 2014-03-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201600623A TW201600623A (zh) | 2016-01-01 |
| TWI692542B true TWI692542B (zh) | 2020-05-01 |
Family
ID=54016800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104107225A TWI692542B (zh) | 2014-03-06 | 2015-03-06 | 電漿前級熱反應器系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20150252473A1 (enExample) |
| JP (1) | JP2017510453A (enExample) |
| KR (1) | KR102351585B1 (enExample) |
| CN (1) | CN106029217A (enExample) |
| TW (1) | TWI692542B (enExample) |
| WO (1) | WO2015134156A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102477302B1 (ko) * | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
| US10337105B2 (en) | 2016-01-13 | 2019-07-02 | Mks Instruments, Inc. | Method and apparatus for valve deposition cleaning and prevention by plasma discharge |
| US10535506B2 (en) | 2016-01-13 | 2020-01-14 | Mks Instruments, Inc. | Method and apparatus for deposition cleaning in a pumping line |
| KR102567720B1 (ko) * | 2016-01-26 | 2023-08-17 | 주성엔지니어링(주) | 기판 처리 장치 |
| JP7008629B2 (ja) * | 2016-01-26 | 2022-01-25 | ジュスン エンジニアリング カンパニー リミテッド | 基板処理装置 |
| CN108701583B (zh) | 2016-04-13 | 2023-12-01 | 应用材料公司 | 用于排气冷却的设备 |
| CN109155233B (zh) * | 2016-04-15 | 2023-05-23 | 应用材料公司 | 利用氧等离子体清洁循环的等离子体减量固体回避法 |
| KR102204229B1 (ko) * | 2016-08-26 | 2021-01-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 저압 리프트 핀 캐비티 하드웨어 |
| US10695713B2 (en) | 2017-01-30 | 2020-06-30 | Panasonic Intellectual Property Management Co., Ltd. | Flux recovery device, and reflow apparatus and gas exchange method using the same |
| JP6606670B2 (ja) * | 2017-01-30 | 2019-11-20 | パナソニックIpマネジメント株式会社 | フラックス回収装置およびリフロー装置ならびにフラックス回収装置における気体交換方法 |
| US20180226234A1 (en) | 2017-02-09 | 2018-08-09 | Applied Materials, Inc. | Plasma abatement technology utilizing water vapor and oxygen reagent |
| US10861681B2 (en) | 2017-05-19 | 2020-12-08 | Applied Materials, Inc. | Apparatus for collection and subsequent reaction of liquid and solid effluent into gaseous effluent |
| GB2564399A (en) * | 2017-07-06 | 2019-01-16 | Edwards Ltd | Improvements in or relating to pumping line arrangements |
| WO2019120358A1 (de) * | 2017-12-21 | 2019-06-27 | centrotherm international AG | Verfahren zum betrieb einer abscheideanlage |
| US10889891B2 (en) * | 2018-05-04 | 2021-01-12 | Applied Materials, Inc. | Apparatus for gaseous byproduct abatement and foreline cleaning |
| US11221182B2 (en) | 2018-07-31 | 2022-01-11 | Applied Materials, Inc. | Apparatus with multistaged cooling |
| US11306971B2 (en) | 2018-12-13 | 2022-04-19 | Applied Materials, Inc. | Heat exchanger with multistaged cooling |
| KR20220024833A (ko) * | 2019-06-25 | 2022-03-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 진공 포어라인에서의 입자 수집을 위한 고효율 트랩 |
| TWI783382B (zh) * | 2020-03-18 | 2022-11-11 | 日商國際電氣股份有限公司 | 基板處理裝置,排氣裝置及半導體裝置的製造方法 |
| KR102300561B1 (ko) * | 2020-07-31 | 2021-09-13 | 삼성전자주식회사 | 증착 시스템 및 공정 시스템 |
| US11745229B2 (en) | 2020-08-11 | 2023-09-05 | Mks Instruments, Inc. | Endpoint detection of deposition cleaning in a pumping line and a processing chamber |
| US11664197B2 (en) | 2021-08-02 | 2023-05-30 | Mks Instruments, Inc. | Method and apparatus for plasma generation |
| KR20230083516A (ko) * | 2021-12-03 | 2023-06-12 | 삼성전자주식회사 | 기판 처리 시스템, 및 이를 사용한 반도체 소자의 제조 방법 |
| KR102490651B1 (ko) * | 2022-08-18 | 2023-01-20 | 주식회사 미래보 | 반도체 공정 시 발생하는 반응부산물 포집 장치의 신속 교체를 통한 공정 정지 로스 감축 시스템 |
| US12159765B2 (en) | 2022-09-02 | 2024-12-03 | Mks Instruments, Inc. | Method and apparatus for plasma generation |
| KR20240115465A (ko) | 2023-01-19 | 2024-07-26 | 삼성전자주식회사 | 플라즈마 소스를 갖는 배기가스 처리 장치 및 이를 포함하는 기판 처리 장치 |
| US12455119B2 (en) | 2023-04-10 | 2025-10-28 | Applied Materials, Inc. | Regenerator for foreline heating |
| KR102814486B1 (ko) * | 2024-01-24 | 2025-05-29 | 주식회사 에이치피에스피 | 고압 기판 처리 장치 및 그에 사용되는 콜드 트랩 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3171593B2 (ja) * | 1990-10-09 | 2001-05-28 | 東京エレクトロン株式会社 | トラップ装置 |
| JP2996524B2 (ja) | 1991-03-18 | 2000-01-11 | 松下電子工業株式会社 | ポリイミド硬化装置 |
| JPH05195952A (ja) | 1992-01-17 | 1993-08-06 | Matsushita Electric Ind Co Ltd | クライオパネル装置 |
| US6045618A (en) * | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
| JPH115012A (ja) * | 1997-06-16 | 1999-01-12 | Kenji Inoue | 排ガス処理方法および処理装置 |
| JP2000026971A (ja) * | 1998-07-10 | 2000-01-25 | Kokusai Electric Co Ltd | Cvd装置の排ガス処理装置 |
| JP2000262841A (ja) * | 1999-03-18 | 2000-09-26 | Kokusai Electric Co Ltd | トラップ装置及び半導体製造装置 |
| US6291938B1 (en) | 1999-12-31 | 2001-09-18 | Litmas, Inc. | Methods and apparatus for igniting and sustaining inductively coupled plasma |
| US6156667A (en) * | 1999-12-31 | 2000-12-05 | Litmas, Inc. | Methods and apparatus for plasma processing |
| JP4549563B2 (ja) * | 2001-03-22 | 2010-09-22 | 三菱電機株式会社 | ハロゲン含有ガスの処理装置 |
| US7060234B2 (en) * | 2001-07-18 | 2006-06-13 | Applied Materials | Process and apparatus for abatement of by products generated from deposition processes and cleaning of deposition chambers |
| JP2005142377A (ja) * | 2003-11-07 | 2005-06-02 | Mitsubishi Heavy Ind Ltd | クリーニングガスのリサイクルシステム |
| US20060090773A1 (en) | 2004-11-04 | 2006-05-04 | Applied Materials, Inc. | Sulfur hexafluoride remote plasma source clean |
| GB0505674D0 (en) * | 2005-03-22 | 2005-04-27 | Boc Group Plc | Trap device |
| US20090175771A1 (en) * | 2006-03-16 | 2009-07-09 | Applied Materials, Inc. | Abatement of effluent gas |
| KR101041026B1 (ko) * | 2008-09-01 | 2011-06-13 | 한국에너지기술연구원 | 공동형 플라즈마 토치, 플라즈마/가스 혼합형 연소장치 및이를 이용한 용융방법 |
| US20100130017A1 (en) | 2008-11-21 | 2010-05-27 | Axcelis Technologies, Inc. | Front end of line plasma mediated ashing processes and apparatus |
| GB0902234D0 (en) * | 2009-02-11 | 2009-03-25 | Edwards Ltd | Method of treating an exhaust gas stream |
| US8747762B2 (en) * | 2009-12-03 | 2014-06-10 | Applied Materials, Inc. | Methods and apparatus for treating exhaust gas in a processing system |
| US20110256734A1 (en) | 2010-04-15 | 2011-10-20 | Hausmann Dennis M | Silicon nitride films and methods |
| CN203002192U (zh) * | 2012-12-28 | 2013-06-19 | 成都老肯科技股份有限公司 | 一种过氧化氢等离子体灭菌器的废气分解装置 |
-
2015
- 2015-02-09 CN CN201580009058.5A patent/CN106029217A/zh active Pending
- 2015-02-09 WO PCT/US2015/015048 patent/WO2015134156A1/en not_active Ceased
- 2015-02-09 KR KR1020167027155A patent/KR102351585B1/ko active Active
- 2015-02-09 JP JP2016573647A patent/JP2017510453A/ja active Pending
- 2015-02-24 US US14/630,631 patent/US20150252473A1/en not_active Abandoned
- 2015-03-06 TW TW104107225A patent/TWI692542B/zh active
-
2019
- 2019-03-28 US US16/368,170 patent/US10920315B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017510453A (ja) | 2017-04-13 |
| CN106029217A (zh) | 2016-10-12 |
| KR102351585B1 (ko) | 2022-01-13 |
| TW201600623A (zh) | 2016-01-01 |
| US20150252473A1 (en) | 2015-09-10 |
| WO2015134156A1 (en) | 2015-09-11 |
| US20190226083A1 (en) | 2019-07-25 |
| KR20160130261A (ko) | 2016-11-10 |
| US10920315B2 (en) | 2021-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI692542B (zh) | 電漿前級熱反應器系統 | |
| TWI895326B (zh) | 專用於零件清潔的系統 | |
| JP6918146B2 (ja) | 液体および固体の排出物を収集して後に反応させて気体の排出物にする装置 | |
| US6255222B1 (en) | Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process | |
| CN101911262B (zh) | 加热的喷头组件 | |
| CN1947216B (zh) | 等离子体加工系统的多片挡板组件 | |
| JP5269770B2 (ja) | Cvdシステム排出のイン・シトゥー洗浄 | |
| TWI750669B (zh) | 電漿處理裝置及大氣開放方法 | |
| CN105026612B (zh) | 用于前级管线等离子体减量系统的气体套管 | |
| JP2001104825A (ja) | 基板処理チャンバのインサイチュ(in−situ)真空ライン清浄用加熱された静電粒子トラップ | |
| WO2017177398A1 (en) | Apparatus for exhaust cooling | |
| US20240368756A1 (en) | Cleaning assemblies for substrate processing chambers | |
| JP6153033B2 (ja) | ガス流の処理装置 | |
| CN1934684A (zh) | 基板处理装置 | |
| KR100819096B1 (ko) | Peox공정을 진행하는 반도체 제조설비의 리모트 플라즈마를 이용한 세정방법 | |
| TW201439367A (zh) | Cvd裝置及cvd裝置處理室的淨化方法 | |
| TWI803080B (zh) | 半導體處理系統及處理半導體基板的方法 | |
| KR100545696B1 (ko) | 진공펌프 일체형 폐기가스 처리장치 | |
| TW202417134A (zh) | 使用微波源清潔節流閥及前級管線 | |
| CN116670323B (zh) | 用于减少节流阀漂移的主动冷却式前级管道陷阱 | |
| CN114107949A (zh) | 配备有自由基部的基板处理装置 | |
| CN118547265A (zh) | 一种半导体处理装置及半导体镀膜设备 | |
| JP3827869B2 (ja) | 半導体製造装置およびそのクリーニング方法 | |
| TW202540483A (zh) | 維護系統、及用於清潔的方法 | |
| KR200336937Y1 (ko) | 진공펌프 일체형 폐기가스 처리장치 |