JP2017510453A - プラズマ・フォアライン・サーマル・リアクタ・システム - Google Patents

プラズマ・フォアライン・サーマル・リアクタ・システム Download PDF

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Publication number
JP2017510453A
JP2017510453A JP2016573647A JP2016573647A JP2017510453A JP 2017510453 A JP2017510453 A JP 2017510453A JP 2016573647 A JP2016573647 A JP 2016573647A JP 2016573647 A JP2016573647 A JP 2016573647A JP 2017510453 A JP2017510453 A JP 2017510453A
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JP
Japan
Prior art keywords
foreline
plasma reactor
subsystem
plasma
exhaust gas
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Pending
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JP2016573647A
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English (en)
Japanese (ja)
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JP2017510453A5 (enExample
Inventor
コリン ジョン ディキンソン
コリン ジョン ディキンソン
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2017510453A publication Critical patent/JP2017510453A/ja
Publication of JP2017510453A5 publication Critical patent/JP2017510453A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treating Waste Gases (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2016573647A 2014-03-06 2015-02-09 プラズマ・フォアライン・サーマル・リアクタ・システム Pending JP2017510453A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461949217P 2014-03-06 2014-03-06
US61/949,217 2014-03-06
PCT/US2015/015048 WO2015134156A1 (en) 2014-03-06 2015-02-09 Plasma foreline thermal reactor system

Publications (2)

Publication Number Publication Date
JP2017510453A true JP2017510453A (ja) 2017-04-13
JP2017510453A5 JP2017510453A5 (enExample) 2018-03-15

Family

ID=54016800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016573647A Pending JP2017510453A (ja) 2014-03-06 2015-02-09 プラズマ・フォアライン・サーマル・リアクタ・システム

Country Status (6)

Country Link
US (2) US20150252473A1 (enExample)
JP (1) JP2017510453A (enExample)
KR (1) KR102351585B1 (enExample)
CN (1) CN106029217A (enExample)
TW (1) TWI692542B (enExample)
WO (1) WO2015134156A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112020766A (zh) * 2018-05-04 2020-12-01 应用材料公司 用于气体副产品消除和前级管线清洁的设备
JP2024028096A (ja) * 2022-08-18 2024-03-01 ミラエボ カンパニー リミテッド 半導体工程用反応副産物捕集装置の迅速交換による工程停止ロス減縮システム
JP2025114519A (ja) * 2024-01-24 2025-08-05 エイチピエスピ カンパニー リミテッド 高圧基板処理装置およびそれに使用されるコールドトラップ

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KR102477302B1 (ko) * 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
US10337105B2 (en) 2016-01-13 2019-07-02 Mks Instruments, Inc. Method and apparatus for valve deposition cleaning and prevention by plasma discharge
US10535506B2 (en) 2016-01-13 2020-01-14 Mks Instruments, Inc. Method and apparatus for deposition cleaning in a pumping line
KR102567720B1 (ko) * 2016-01-26 2023-08-17 주성엔지니어링(주) 기판 처리 장치
JP7008629B2 (ja) * 2016-01-26 2022-01-25 ジュスン エンジニアリング カンパニー リミテッド 基板処理装置
CN108701583B (zh) 2016-04-13 2023-12-01 应用材料公司 用于排气冷却的设备
CN109155233B (zh) * 2016-04-15 2023-05-23 应用材料公司 利用氧等离子体清洁循环的等离子体减量固体回避法
KR102204229B1 (ko) * 2016-08-26 2021-01-15 어플라이드 머티어리얼스, 인코포레이티드 저압 리프트 핀 캐비티 하드웨어
US10695713B2 (en) 2017-01-30 2020-06-30 Panasonic Intellectual Property Management Co., Ltd. Flux recovery device, and reflow apparatus and gas exchange method using the same
JP6606670B2 (ja) * 2017-01-30 2019-11-20 パナソニックＩｐマネジメント株式会社 フラックス回収装置およびリフロー装置ならびにフラックス回収装置における気体交換方法
US20180226234A1 (en) 2017-02-09 2018-08-09 Applied Materials, Inc. Plasma abatement technology utilizing water vapor and oxygen reagent
US10861681B2 (en) 2017-05-19 2020-12-08 Applied Materials, Inc. Apparatus for collection and subsequent reaction of liquid and solid effluent into gaseous effluent
GB2564399A (en) * 2017-07-06 2019-01-16 Edwards Ltd Improvements in or relating to pumping line arrangements
WO2019120358A1 (de) * 2017-12-21 2019-06-27 centrotherm international AG Verfahren zum betrieb einer abscheideanlage
US11221182B2 (en) 2018-07-31 2022-01-11 Applied Materials, Inc. Apparatus with multistaged cooling
US11306971B2 (en) 2018-12-13 2022-04-19 Applied Materials, Inc. Heat exchanger with multistaged cooling
KR20220024833A (ko) * 2019-06-25 2022-03-03 어플라이드 머티어리얼스, 인코포레이티드 진공 포어라인에서의 입자 수집을 위한 고효율 트랩
TWI783382B (zh) * 2020-03-18 2022-11-11 日商國際電氣股份有限公司 基板處理裝置，排氣裝置及半導體裝置的製造方法
KR102300561B1 (ko) * 2020-07-31 2021-09-13 삼성전자주식회사 증착 시스템 및 공정 시스템
US11745229B2 (en) 2020-08-11 2023-09-05 Mks Instruments, Inc. Endpoint detection of deposition cleaning in a pumping line and a processing chamber
US11664197B2 (en) 2021-08-02 2023-05-30 Mks Instruments, Inc. Method and apparatus for plasma generation
KR20230083516A (ko) * 2021-12-03 2023-06-12 삼성전자주식회사 기판 처리 시스템, 및 이를 사용한 반도체 소자의 제조 방법
US12159765B2 (en) 2022-09-02 2024-12-03 Mks Instruments, Inc. Method and apparatus for plasma generation
KR20240115465A (ko) 2023-01-19 2024-07-26 삼성전자주식회사 플라즈마 소스를 갖는 배기가스 처리 장치 및 이를 포함하는 기판 처리 장치
US12455119B2 (en) 2023-04-10 2025-10-28 Applied Materials, Inc. Regenerator for foreline heating

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JPH04150903A (ja) * 1990-10-09 1992-05-25 Tokyo Electron Sagami Ltd トラップ装置
JPH115012A (ja) * 1997-06-16 1999-01-12 Kenji Inoue 排ガス処理方法および処理装置
JP2000026971A (ja) * 1998-07-10 2000-01-25 Kokusai Electric Co Ltd Ｃｖｄ装置の排ガス処理装置
JP2000262841A (ja) * 1999-03-18 2000-09-26 Kokusai Electric Co Ltd トラップ装置及び半導体製造装置
JP2002273169A (ja) * 2001-03-22 2002-09-24 Mitsubishi Electric Corp ハロゲン含有ガスの処理装置
JP2005142377A (ja) * 2003-11-07 2005-06-02 Mitsubishi Heavy Ind Ltd クリーニングガスのリサイクルシステム
US20110135552A1 (en) * 2009-12-03 2011-06-09 Applied Materials, Inc. Methods and apparatus for treating exhaust gas in a processing system
JP2012514531A (ja) * 2009-01-01 2012-06-28 アプライド マテリアルズ インコーポレイテッド 排ガス削減の改善
JP2012517581A (ja) * 2009-02-11 2012-08-02 エドワーズ リミテッド 排気ガスの処理方法

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JPH04150903A (ja) * 1990-10-09 1992-05-25 Tokyo Electron Sagami Ltd トラップ装置
JPH115012A (ja) * 1997-06-16 1999-01-12 Kenji Inoue 排ガス処理方法および処理装置
JP2000026971A (ja) * 1998-07-10 2000-01-25 Kokusai Electric Co Ltd Ｃｖｄ装置の排ガス処理装置
JP2000262841A (ja) * 1999-03-18 2000-09-26 Kokusai Electric Co Ltd トラップ装置及び半導体製造装置
JP2002273169A (ja) * 2001-03-22 2002-09-24 Mitsubishi Electric Corp ハロゲン含有ガスの処理装置
JP2005142377A (ja) * 2003-11-07 2005-06-02 Mitsubishi Heavy Ind Ltd クリーニングガスのリサイクルシステム
JP2012514531A (ja) * 2009-01-01 2012-06-28 アプライド マテリアルズ インコーポレイテッド 排ガス削減の改善
JP2012517581A (ja) * 2009-02-11 2012-08-02 エドワーズ リミテッド 排気ガスの処理方法
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112020766A (zh) * 2018-05-04 2020-12-01 应用材料公司 用于气体副产品消除和前级管线清洁的设备
JP2021524162A (ja) * 2018-05-04 2021-09-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ガス状副生成物軽減およびフォアライン洗浄のための装置
JP7083424B2 (ja) 2018-05-04 2022-06-10 アプライド マテリアルズ インコーポレイテッド ガス状副生成物軽減およびフォアライン洗浄のための装置
CN112020766B (zh) * 2018-05-04 2025-01-03 应用材料公司 用于气体副产品消除和前级管线清洁的设备
JP2024028096A (ja) * 2022-08-18 2024-03-01 ミラエボ カンパニー リミテッド 半導体工程用反応副産物捕集装置の迅速交換による工程停止ロス減縮システム
JP7479087B2 (ja) 2022-08-18 2024-05-08 ミラエボ カンパニー リミテッド 半導体工程用反応副産物捕集装置の迅速交換による工程停止ロス減縮システム
JP2025114519A (ja) * 2024-01-24 2025-08-05 エイチピエスピ カンパニー リミテッド 高圧基板処理装置およびそれに使用されるコールドトラップ

Also Published As

Publication number Publication date
CN106029217A (zh) 2016-10-12
TWI692542B (zh) 2020-05-01
KR102351585B1 (ko) 2022-01-13
TW201600623A (zh) 2016-01-01
US20150252473A1 (en) 2015-09-10
WO2015134156A1 (en) 2015-09-11
US20190226083A1 (en) 2019-07-25
KR20160130261A (ko) 2016-11-10
US10920315B2 (en) 2021-02-16

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