TWI668768B - Engagement device and joining method - Google Patents

Engagement device and joining method Download PDF

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Publication number
TWI668768B
TWI668768B TW106141720A TW106141720A TWI668768B TW I668768 B TWI668768 B TW I668768B TW 106141720 A TW106141720 A TW 106141720A TW 106141720 A TW106141720 A TW 106141720A TW I668768 B TWI668768 B TW I668768B
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TW
Taiwan
Prior art keywords
sheet
bonding
suction hole
electronic component
tapered side
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TW106141720A
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English (en)
Other versions
TW201826406A (zh
Inventor
渡辺治
中村智宣
前田徹
永井訓
野口勇一郎
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日商新川股份有限公司
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Publication of TW201826406A publication Critical patent/TW201826406A/zh
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Publication of TWI668768B publication Critical patent/TWI668768B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/1429—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
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    • B29C65/1435—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface at least passing through one of the parts to be joined, i.e. transmission welding
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Abstract

本發明的課題是將電子零件經由黏接材料良好地接合於基板上。接合裝置10是將電子零件100經由黏接材料112熱壓接於基板110或其他電子零件上的接合裝置，包括：接合工具40，包含接合前端部42，所述接合前端部42包含接合面44及錐形側面46，所述接合面44設置有隔著單片狀的多孔性片材130吸附電子零件100的第1抽吸孔50，所述錐形側面46形成為朝向接合面44前端變細的錐狀，且設置有吸附多孔性片材130的第2抽吸孔52、第2抽吸孔54；以及接合控制部30，對第1抽吸孔50及第2抽吸孔52、第2抽吸孔54相互獨立地進行控制。

Description

接合裝置和接合方法
本發明是有關於一種接合裝置和接合方法。
現在已知有將半導體芯片(semiconductor die)等電子零件接合於基板上的封裝技術。例如，在專利文獻1中，為了容易控制黏接劑的供給量，將樹脂薄膜(黏接劑)供給至基板，並利用接合工具將半導體芯片經由樹脂薄膜接合於基板上。
[現有技術文獻]
[專利文獻]
專利文獻1：日本專利第4780858號公報
然而，先前，存在如下情況：藉由接合工具的加熱及加壓，基板上的黏接劑會自半導體芯片的側面上爬至上方，使得經熔融的黏接劑附著在接合工具的前端部。又，存在如下情況：當對黏接劑進行加熱熔融而封裝時，由黏接劑產生的煙氣(fume gas)會進入至接合工具的抽吸孔，由此使接合工具污染。此外，伴隨著近年來的電子零件的小型化，在接合步驟中亦需要考慮窄間距化。
本發明是鑒於此種情況而開發的，目的在於提供一種可將電子零件經由黏接材料良好地接合於基板上的接合裝置和接合 方法。
本發明的第1實施形態的接合裝置是將電子零件經由黏接材料熱壓接於基板或其他電子零件上的接合裝置，包括：接合工具，包括接合前端部，所述接合前端部包括接合面及錐形側面，所述接合面設置有隔著具有透氣性的單片狀的透氣性片材而吸附電子零件的第1抽吸孔，所述錐形側面形成為朝向接合面前端變細的錐狀，且設置有吸附透氣性片材的第2抽吸孔；以及接合控制部，對第1抽吸孔及第2抽吸孔相互獨立地進行控制。
根據所述構成，包括接合控制部，所述接合控制部是對設置在接合面上的第1抽吸孔、以及設置在錐形側面上的第2抽吸孔相互獨立地進行控制，故可分別視需要而獨立地控制電子零件或透氣性片材的吸附或脫離。又，透氣性片材是由設置在錐形側面上的第2抽吸孔吸附，故可防止單片狀的多孔性片材的端部下垂，從而在接合步驟時使透氣性片材確實地吸附於接合前端部。因此，可將電子零件經由黏接材料良好地接合於基板上。
本發明的接合方法包括如下步驟：準備接合工具，所述接合工具包括接合前端部，所述接合前端部包含接合面以及錐形側面，所述接合面設置有隔著具有透氣性的單片狀的透氣性片材而吸附電子零件的第1抽吸孔，所述錐形側面形成為朝向接合面前端變細的錐狀，且設置有吸附透氣性片材的第2抽吸孔；將第1抽吸孔及第2抽吸孔的抽吸動作設為導通狀態，隔著透氣性片材 將電子零件吸附於接合面上；藉由接合工具將電子零件經由黏接材料熱壓接於基板或其他電子零件上；以及一面將第2抽吸孔的抽吸動作設為導通狀態，一面將第1抽吸孔的抽吸動作設為斷開狀態或將排氣動作設為導通狀態，使電子零件自接合面脫離。
根據本發明，可將電子零件經由黏接材料良好地接合於基板上。
10、10A、10B‧‧‧接合裝置
12‧‧‧晶圓平台
14‧‧‧中間平台
16‧‧‧接合平台
17‧‧‧片材載置平台
18‧‧‧接合頭
20‧‧‧Z軸驅動機構
26、27‧‧‧攝像部
28‧‧‧XY台
30‧‧‧接合控制部
32‧‧‧操作部
34‧‧‧顯示部
40‧‧‧接合工具
42‧‧‧接合前端部
44‧‧‧接合面
46、46a~46d、66、66a~66d‧‧‧錐形側面
48‧‧‧周邊面
50‧‧‧第1抽吸孔
52、54‧‧‧第2抽吸孔
60‧‧‧片材載置部
62‧‧‧片材回收孔
64‧‧‧底面
68‧‧‧周邊
70、71‧‧‧開孔機構
70a、71a‧‧‧針構件
100‧‧‧電子零件/半導體芯片
102a、122a‧‧‧第1主面
102b、122b‧‧‧第2主面
104‧‧‧電極墊
106‧‧‧凸塊電極
108‧‧‧保護膜
110‧‧‧基板
112、114‧‧‧黏接材料
120‧‧‧晶圓
130‧‧‧多孔性片材
140‧‧‧半導體裝置/片材
S10~S15‧‧‧步驟
θ1、θ2‧‧‧傾斜角度
III-III、VI-VI‧‧‧剖面線
圖1是表示本發明的第1實施形態的接合裝置的圖。
圖2是圖1的接合工具的俯視圖。
圖3是圖2的III-III線剖面圖。
圖4是表示本實施形態的接合方法的圖。
圖5是圖4的片材載置平台的俯視圖。
圖6是表示第1實施形態的接合方法的圖。
圖7是表示第1實施形態的接合方法的圖。
圖8是表示第1實施形態的接合方法的圖。
圖9是表示第1實施形態的接合方法的圖。
圖10是第1實施形態的接合方法的流程圖。
圖11是表示本發明的第2實施形態的接合裝置的圖。
圖12是表示本發明的第3實施形態的接合裝置的圖。
以下對本發明的實施形態進行說明。在以下圖式的記載中，相同或類似的構成要素是用相同或類似的符號表示。圖式為例示，各部的尺寸或形狀為示意性的尺寸或形狀，不應將本申請發明的技術範圍限定於所述實施形態來解釋。
再者，在本發明的各實施形態中，所謂透氣性，是指夾於接合頭與半導體芯片之間的上爬防止用的片材可在如下程度上使空氣透過的性能：藉由自形成於接合頭上的第1抽吸孔、第2抽吸孔供給的真空，而使接合頭可將半導體芯片保持在所述接合面上。即，具有透氣性的上爬防止用的片材例如，如以下所述為多孔性片材、不織布或形成有透氣孔的片材，但所述實施方式不可作限定性解釋。
(第1實施形態)
圖1是表示第1實施形態的接合裝置的整體概況的圖。本實施形態的接合裝置10是用以將電子零件的一例即半導體芯片100封裝於基板110的接合區域的裝置。
在圖1所示的示例中，揭示半導體芯片100作為接合於基板110的電子零件的一例。半導體芯片100包含半導體材料。半導體芯片100形成為具有作為主面的表面及背面的長方體狀。具體而言，半導體芯片100包括形成有規定的電路圖案的表面即第1主面102a、以及與第1主面102a相反的背面即第2主面102b。在本實施形態中，在半導體芯片100的第1主面102a與基板110相對向的方向上，半導體芯片100與基板110接合。此種接合實 施方式被稱為倒裝接合(face down bonding)。
接合裝置10包括晶圓平台(wafer stage)12、中間平台14、接合平台16、片材載置平台17、接合頭18、經由Z軸驅動機構20安裝在接合頭18上的接合工具40(包含接合前端部42)、獲取半導體芯片100的圖像資訊的攝像部26及攝像部27、使接合頭18在XY軸方向上移動的XY台(table)28、以及對該些各種構成的動作進行控制的接合控制部30。
在以下的說明中，將XY軸方向設為與半導體芯片100的主面(或任一平台的主面)平行的方向，將Z軸方向設為與XY軸方向上的面垂直的方向來進行說明。再者，X軸方向與Y軸方向為相互正交。
在晶圓平台12上，載置有包含經單片化的多個半導體芯片100的晶圓120。晶圓120包括形成有規定的電路圖案的表面即第1主面122a(相當於半導體芯片100的第1主面102a)、以及與第1主面122a相反的背面即第2主面122b(相當於半導體芯片100的第2主面102b)。晶圓120藉由將第2主面122b貼附於晶圓平台12上的薄膜上，而固定在晶圓平台12上。晶圓平台12上的半導體芯片100在藉由吸附工具與拾取單元(均未圖示)的協同動作而拾取半導體芯片100之後，藉由移送頭(未圖示)，而移送至中間平台14。
中間平台14是用以暫時載置半導體芯片100的平台。中間平台14配置在晶圓平台12與接合平台16之間。在接合平台 16上將半導體芯片100倒裝接合於基板110上時，使自晶圓平台12拾取的半導體芯片100的方向正反反轉，而在第1主面102a所對向的方向上將半導體芯片100載置在中間平台14上。中間平台14是藉由線性馬達(未圖示)等驅動機構，可沿XY軸方向移動而構成。半導體芯片100藉由將第1主面102a貼附於中間平台14上的薄膜上，而固定在中間平台14上。中間平台14上的半導體芯片100在藉由吸附工具與拾取單元(均未圖示)的協同動作而拾取半導體芯片100之後，藉由移送頭(未圖示)，而移送至接合平台16。
接合平台16是用以配置基板110，將半導體芯片100接合於基板110上的平台。基板110包括搭載電子零件(半導體芯片100)的搭載區域。在圖1所示的示例中，基板110包含一個搭載區域。基板110例如藉由在接合平台16上的薄膜上貼附與設置有基板110的搭載區域的面相反的面，而固定在接合平台16上。
再者，作為變形例，例如亦可在一個基板110上設置有多個搭載區域。此時，可藉由在基板110的各搭載區域內搭載電子零件(半導體芯片100)之後，在每個搭載區域內使基板110單片化，來獲得多個成品(包括電子零件的電子器件)。
或者，亦可藉由在基板110上的一個搭載區域內層疊多個半導體芯片100，而製造堆疊(stack)型半導體裝置。即，亦可在接合平台16上，在已搭載於基板110上的其他電子零件(例如半導體芯片)上搭載電子零件(半導體芯片100)。在此種堆疊 型半導體裝置中，亦可為搭載在搭載區域內的兩個以上的半導體芯片100全部朝向相同的方向，或者亦可為一部分朝向不同的方向。
基板110的材質例如包含有機材料(例如環氧基板或聚醯亞胺基板)、無機材料(例如玻璃基板)或該些材料的複合材料(例如玻璃環氧基板)。基板110是所謂的插入器(interposer)。
再者，接合平台16是藉由導軌(未圖示)等驅動機構，而使基板110可沿X軸方向移動而構成。又，接合平台16包括用以對基板110進行加熱的加熱部。
片材載置平台17是用以供給或回收具有透氣性的單片狀的多孔性片材130(參照圖4)的平台。片材載置平台17包含載置單片狀的多孔性片材130的至少一個片材載置部60。片材載置部60的構成將在後文說明。
在接合頭18上，經由Z軸驅動機構20安裝有接合工具40，並且，在與接合工具40在Y軸方向上相隔規定距離的位置上安裝有攝像部26。換言之，在圖1所示的示例中，接合工具40及攝像部26是固定在接合頭18上，接合頭18藉由XY台28而移動，從而使接合工具40與攝像部26一併沿XY軸方向移動。又，在與攝像部26相反之側，設置有攝像部27。攝像部26可在中間平台14或接合平台16上，拍攝半導體芯片100的第2主面102b，攝像部27可拍攝半導體芯片100的第1主面102a。再者，作為變形例，攝像部26亦可不固定在接合頭18上，而與接合工 具40各別地移動。
接合工具40包括接合半導體芯片100的接合前端部42。接合前端部42是沿Z軸方向延伸的接合工具40之中接合平台16側的端部。接合工具40內置有加熱器(heater)(未圖示)，以能夠對半導體芯片100或基板110進行加熱。又，接合工具40具有抽真空(air vacuum)功能及/或鼓風(air blow)功能，以能夠使半導體芯片100或多孔性片材130吸附或脫離。在本實施形態中，藉由接合工具40而隔著多孔性片材130將半導體芯片100接合於基板110上。再者，接合工具40的構成將在後文說明。
多孔性片材130具有用以使一個主面與另一個主面之間通氣的多個孔。關於多孔性片材130的哥雷值(Gurley value)，為了吸附半導體芯片100等電子零件，值越小越好，較佳為例如具有1~2(s/100 cc/in2)的範圍。
又，多孔性片材130包含較作為接合對象的半導體芯片100的半導體材料或接合面44的材質更柔軟的材質。多孔性片材130亦可為例如不織布。
多孔性片材130例如為四氟乙烯樹脂(聚四氟乙烯(Polytetrafluoroethylene，PTFE))或聚醯亞胺，但對其材質並不限定，亦可使用其他多孔性的材料。例如，當使用四氟乙烯樹脂作為多孔性片材130時，四氟乙烯樹脂亦可為PTFE奈米纖維。PTFE奈米纖維亦可使用具有約1μm~2μm的孔徑，具有約56μm的厚度，且哥雷值具有1.2(s/100 cc/in2)者。PTFE奈米纖維儘 管厚卻可減小哥雷值(即提高通氣性)，而且，即使加熱至約260℃亦幾乎不會熱收縮，故在例如施加230℃以上的熱的製造製程中具有耐熱性。因此，PTFE奈米纖維在用作本實施形態的多孔性片材130時有效。
接合控制部30是控制為了利用接合裝置10進行接合所必需的處理的構件。接合控制部30進行包含接合工具40的XYZ軸驅動、θ軸驅動(圍繞著Z軸的旋轉)及傾斜驅動(tilt drive)(傾斜方向)的接合工具40的位置控制、抽真空功能及/或鼓風功能的導通或斷開控制、將半導體芯片100封裝至基板110時的載荷控制、接合工具40或接合平台16的熱供給控制等。接合控制部30是以在與接合頭18、接合工具40及攝像部26、攝像部27等各構成之間可進行信號的收發的方式連接，藉此對該些構件的動作進行控制。
在接合控制部30上，連接有用以輸入控制資訊的操作部32、以及用以輸出控制資訊的顯示部34。由此，操作者可一面藉由顯示部34識別畫面，一面藉由操作部32而輸入需要的控制資訊。
接合控制部30是包括中央處理單元(Central Processing Unit，CPU)及記憶體等的電腦裝置，在記憶體中預先儲存有用以進行接合所必需的處理的接合程式等。接合控制部30是可執行後述本實施形態的半導體芯片的封裝方法的相關各步驟而構成(例如包含用以使電腦執行各動作的程式)。
其次，一面參照圖2及圖3，一面對本實施形態的接合工具40的詳細情況進行說明。圖2是接合工具40的俯視圖。圖3是圖2的III-III線剖面圖。
接合前端部42包括接合面44、以及朝向接合面44前端變細的錐形側面46a~錐形側面46d(以下，亦將該些面統稱為「錐形側面46」)。在圖2所示的示例中，在接合面44上設置有多個第1抽吸孔50，在錐形側面46上設置有多個第2抽吸孔52、第2抽吸孔54，以便能夠使多孔性片材130或半導體芯片100吸附或脫離。
接合面44與作為接合對象的半導體芯片100的形狀相對應，例如在XY平面觀察時呈矩形狀。又，接合面44在XY平面觀察時具有大於半導體芯片100(電子零件)的形狀。藉此，可利用接合面44均勻地按壓整個半導體芯片100，故可實現良好的接合。
錐形側面46設置在接合面44的各邊上。在圖2所示的示例中，在接合面44的各邊之中任一條邊上設置有錐形側面46a，且與錐形側面46a鄰接地設置有錐形側面46b，與錐形側面46b鄰接地設置有錐形側面46c，與錐形側面46c鄰接地設置有錐形側面46d。換言之，錐形側面46a、錐形側面46c設置在接合面44的相互對向的各邊上，另一方面，錐形側面46b、錐形側面46d設置在接合面44的相互對向的各邊上。如圖3所示，各錐形側面46a~錐形側面46d與接合工具40的周邊面48(或接合面44)所成的 角θ1為θ1>90度(例如θ1≧135度)。各錐形側面46a~錐形側面46d的傾斜角度θ1可根據接合面44的大小或半導體芯片100的吸附程度等來適當設定。
多個第1抽吸孔50(圖2中為10個)設置在接合面44的中央區域。由此，可藉由第1抽吸孔50來有效地吸附半導體芯片100。
再者，多個第1抽吸孔50是朝向接合工具40的基端部側延伸且相互連通(未圖示)。由此，可統一控制多個第1抽吸孔50。
又，多個第2抽吸孔52(圖2中為3個)設置在任一個錐形側面46a上，多個第2抽吸孔54(圖2中為3個)設置在與錐形側面46a相對向的錐形側面46c上。另一方面，在剩下的錐形側面46b、錐形側面46d上未設置第2抽吸孔。藉此，對多孔性片材130在單方向上進行吸附支撐，因此可抑制片材的褶皺或下垂，從而將多孔性片材130以良好的狀態吸附於接合前端部42上。
在圖2所示的示例中，第2抽吸孔52(或第2抽吸孔54)是以沿錐形側面46a(或錐形側面46c)上的接合面44的邊的延伸方向間隔彼此大致均等的方式配置。
再者，多個第2抽吸孔52、第2抽吸孔54是朝向接合工具40的基端部側延伸且相互連通(未圖示)。由此，可統一控制多個第2抽吸孔52、第2抽吸孔54。
在本實施形態中，對設置在接合面44上的多個第1抽 吸孔50、與設置在錐形側面46上的多個第2抽吸孔52、第2抽吸孔54可相互獨立地進行控制而構成。藉由採用此種構成，例如，(i)當使多孔性片材130與半導體芯片100兩者吸附於接合工具40上時，將第1抽吸孔50及第2抽吸孔52、第2抽吸孔54的抽吸動作均控制成導通狀態，(ii)當使半導體芯片100自接合工具40脫離時，一面將第1抽吸孔50的抽吸動作設為斷開狀態，一面將第2抽吸孔52、第2抽吸孔54的抽吸動作控制成導通狀態，(iii)當使多孔性片材130自接合工具40脫離時，將第1抽吸孔50及第2抽吸孔52、第2抽吸孔54的抽吸動作均設為斷開狀態。
再者，亦可替代在所述(i)~(iii)中將抽吸動作設為斷開狀態的操作，將排氣動作控制成導通狀態，以便藉由鼓風等而引起真空破壞。藉此，可使半導體芯片100或多孔性片材130自接合工具40確實地脫離。
其次，一面參照圖4~圖10，一面對本實施形態的接合方法進行說明。圖4~圖9是表示本實施形態的接合方法的圖，圖10是本實施形態的接合方法的流程圖。再者，圖5是本實施形態的片材載置平台的俯視圖。本實施形態的接合方法可利用圖1所示的接合裝置10來進行。藉由本實施形態的接合方法，可製造將半導體芯片100經由黏接材料114封裝在基板110上的半導體裝置140(參照圖8)。
以下，按照圖10的流程圖，一面參照圖4~圖9的各圖，一面對接合方法進行說明。
首先，在晶圓平台12上，準備經單片化的多個半導體芯片100(S10)。具體而言，如圖1所示，在晶圓平台12上，準備包含貼附在薄膜上的多個半導體芯片100的晶圓120。晶圓120是將多個半導體芯片100分別在第1主面102a朝向上方並且第2主面102b與晶圓平台12相對向的方向上，配置在晶圓平台12上。
其次，將半導體芯片100移送至中間平台14(S11)。例如，藉由吸附工具與拾取單元(均未圖示)的協同動作，將晶圓平台12上的多個半導體芯片100一個個地移送至中間平台14。
另一方面，對片材載置平台17的片材載置部60供給多孔性片材130，使接合工具40移動至片材載置平台17的上方，使多孔性片材130吸附於接合面44(S12)。具體而言，如圖4所示，使接合前端部42嵌合於片材載置部60，並且將第1抽吸孔50及第2抽吸孔52、第2抽吸孔54的抽吸動作設為導通狀態(VAC：導通(ON))，使多孔性片材130吸附於接合前端部42。步驟S12可與步驟S11同時進行或在步驟S11之後進行。
在此處，對片材載置平台17的構成進行說明。圖5是片材載置平台17的俯視圖，圖4是圖5的VI-VI線剖面圖。
片材載置平台17包含至少一個片材載置部60。在一個片材載置部60上載置有單片狀的一個多孔性片材130。在圖4所示的示例中，表示有一個片材載置部60，但亦可在片材載置平台17上設置有多個片材載置部60。
片材載置部60包括支撐多孔性片材130的底面64、以 及形成為越遠離底面64越擴大的錐狀的錐形側面66a、錐形側面66b、錐形側面66c、錐形側面66d(以下亦將該些面統稱為「錐形側面66」)。在圖4所示的示例中，在底面64上設置有用以回收多孔性片材130的片材回收孔62。
底面64與接合面44的形狀相對應，例如在XY平面觀察時呈矩形狀。又，底面64在XY平面觀察時具有大於半導體芯片100(電子零件)的形狀。
錐形側面66是與接合前端部42的錐形側面46相對應而設置，且設置在底面64的各邊上。在圖5所示的示例中，在底面64的各邊之中任一條邊上設置有錐形側面66a，且與錐形側面66a鄰接地設置有錐形側面66b，與錐形側面66b鄰接地設置有錐形側面66c，與錐形側面66c鄰接地設置有錐形側面66d。換言之，錐形側面66a、錐形側面66c設置在底面64的相互對向的各邊上，另一方面，錐形側面66b、錐形側面66d設置在底面64的相互對向的各邊上。如圖4所示，各錐形側面66a~錐形側面66d與片材載置平台17的周邊68(或底面64)所成的角θ2為θ2>90度(例如θ2≧135度)。各錐形側面66a~錐形側面66d的傾斜角度θ2亦可與接合前端部42的各錐形側面46a~錐形側面46d的傾斜角度θ1實質上相同。
若返回至圖10的流程圖，則其次，藉由接合工具40，將半導體芯片100經由黏接材料112熱壓接於基板110上(S13)。
具體而言，首先，在使多孔性片材130吸附於接合前端 部42的狀態下，使接合工具40移動至中間平台14的上方，而使中間平台14上的半導體芯片100隔著多孔性片材130吸附於接合前端部42上。然後，將接合工具40如圖6所示配置在接合平台16的上方。此時，半導體芯片100是形成有規定的電路圖案的第1主面102a與基板110相對向，第2主面102b隔著多孔性片材130而吸附於接合面44上。又，多孔性片材130吸附於接合面44及錐形側面46上。如圖6所示，在步驟S13的步驟中，第1抽吸孔50及第2抽吸孔52、第2抽吸孔54的抽吸動作是設為導通狀態(VAC：導通)。
在此處，對半導體芯片100的構成進行說明。在半導體芯片100的第1主面102a上，設置有多個電極墊(pad)104、設置在多個電極墊104上的多個凸塊電極106、以及設置在多個凸塊電極106的周圍的保護膜108。電極墊104是與形成於第1主面102a上的電路圖案電性連接的端子。又，在各電極墊104的外周端部，被保護膜108所包覆，由此露出的電極墊104的中央部成為與凸塊電極106的連接部。
電極墊104及凸塊電極106的材質並無限定，例如電極墊104亦可為鋁或銅等，並且，凸塊電極106亦可為金等。
若返回至圖6，則在接合平台16上配置有基板110，在基板110的搭載半導體芯片100的區域內設置有黏接材料112。在圖6所示的示例中，黏接材料112在常溫下為漿料狀，但並不限於此，亦可在常溫下為薄膜狀。黏接材料112例如為熱硬化性樹 脂。藉此，可藉由對黏接材料112進行加熱而使其熔融及硬化。
然後，如圖7所示，使接合工具40朝向接合平台16下降，並利用接合工具40進行加壓及加熱，將半導體芯片100經由經熱硬化的黏接材料114而接合於基板110上。如此一來，可實現半導體芯片100的凸塊電極106與基板110的配線(未圖示)的電性接合，同時，可對半導體芯片100與基板110之間進行樹脂密封。再者，黏接材料並不限於在接合前預先設置在基板110上的實施方式，亦可在接合步驟中在半導體芯片100與基板110之間作為底部填充料(underfill)而填充。
半導體芯片100的向基板110的熱壓接結束之後，使半導體芯片100自接合面44脫離(S14)。具體而言，如圖8所示，一面將第1抽吸孔50的抽吸動作設為斷開狀態(VAC：斷開(OFF))，一面將第2抽吸孔52、第2抽吸孔54的抽吸動作均控制成導通狀態(VAC：導通)。如此一來，可一面使多孔性片材130吸附於接合前端部42上，一面僅使半導體芯片100自接合前端部42脫離。此時，多孔性片材130是吸附於相對向的一對錐形側面46a、錐形側面46c上，故可預先穩定地吸附在接合前端部42上。
然後，使接合工具40移動至片材載置平台17的上方，使多孔性片材130自接合面44脫離至片材載置部60上(S15)。具體而言，如圖9所示，將第1抽吸孔50及第2抽吸孔52、第2抽吸孔54的抽吸動作均設為斷開狀態。如此一來，可使多孔性片材130自接合前端部42脫離。然後，配置在片材載置部60上的 使用完的多孔性片材130亦可設為藉由將片材回收孔62的抽吸動作設為導通狀態(VAC：導通)，而回收至片材回收孔62內。
再者，在所述接合方法中，亦可代替將抽吸動作設為斷開狀態的操作，將排氣動作控制成導通狀態，以便藉由鼓風等而引起真空破壞。藉此，可使半導體芯片100或多孔性片材130自接合工具40確實地脫離。
如以上所述，本實施形態的接合裝置是將電子零件經由黏接材料熱壓接於基板或其他電子零件上的接合裝置，包括：接合工具，包含接合前端部，所述接合前端部包含接合面及錐形側面，所述接合面設置有隔著單片狀的多孔性片材吸附電子零件的第1抽吸孔，所述錐形側面形成為朝向接合面前端變細的錐狀，且設置有吸附多孔性片材的第2抽吸孔；以及接合控制部，對第1抽吸孔及第2抽吸孔相互獨立地進行控制。
根據所述構成，包含接合控制部，所述接合控制部是對設置在接合面上的第1抽吸孔、與設置在錐形側面上的第2抽吸孔相互獨立地進行控制，因此可分別視需要而獨立地控制電子零件或多孔性片材的吸附或脫離。因此，可將電子零件經由黏接材料良好地接合於基板上。又，多孔性片材是由設置在錐形側面上的第2抽吸孔來吸附，故可防止單片狀的多孔性片材的端部下垂，從而在接合步驟時使多孔性片材確實地吸附於接合前端部。又，設置有第2抽吸孔的部分是形成為錐狀，故可進行與窄間距化相應的接合步驟。
在所述實施方式中，亦可為接合面呈矩形狀，錐形側面至少分別設置在接合面的相互對向的各邊上。
在所述實施方式中，亦可為接合面在俯視所述接合面時大於電子零件。
在所述實施方式中，亦可更包括至少一個片材載置部，所述片材載置部載置多孔性片材，以便對接合工具供給或回收多孔性片材。
在所述實施方式中，亦可為至少一個片材載置部包括支撐多孔性片材的底面、以及形成為越遠離底面越擴大的錐狀的錐形側面。
在所述實施方式中，亦可為片材載置部的底面呈矩形狀，片材載置部的錐形側面至少分別設置在底面的相互對向的各邊上。
在所述實施方式中，亦可為在片材載置部的底面上設置有回收多孔性片材的片材回收孔。
本實施形態的接合方法包括如下步驟：準備接合工具，所述接合工具包括接合前端部，所述接合前端部包含接合面及錐形側面，所述接合面設置有隔著單片狀的多孔性片材吸附電子零件的第1抽吸孔，所述錐形側面形成為朝向接合面前端變細的錐狀，且設置有吸附多孔性片材的第2抽吸孔；將第1抽吸孔及第2抽吸孔的抽吸動作設為導通狀態，隔著多孔性片材將電子零件吸附於接合面上；藉由接合工具，將電子零件經由黏接材料熱壓接 於基板或其他電子零件上；以及一面將第2抽吸孔的抽吸動作設為導通狀態，一面將第1抽吸孔的抽吸動作設為斷開狀態或將排氣動作設為導通狀態，而使所述電子零件自接合面脫離。
根據所述構成，包括接合控制部，所述接合控制部是對設置在接合面上的第1抽吸孔、以及設置在錐形側面上的第2抽吸孔相互獨立地進行控制，故可分別視需要而獨立地控制電子零件或多孔性片材的吸附或脫離。因此，可將電子零件經由黏接材料良好地接合於基板上。又，多孔性片材是由設置在錐形側面上的第2抽吸孔吸附，因此可防止單片狀的多孔性片材的端部下垂，從而在接合步驟時使多孔性片材確實地吸附於接合前端部。又，設置有第2抽吸孔的部分形成為錐狀，因此可進行與窄間距化相應的接合步驟。
又，由於多孔性片材介於接合前端部與電子零件之間，故即使黏接材料自電子零件的側面上爬至上方，亦可防止黏接材料附著在接合前端部。因此，即使應用在XY平面觀察時大於電子零件的接合面，亦會抑制接合工具的污染等，從而不會降低裝置的維護性。因此，可均勻地按壓整個電子零件，並且實現維護性的提高。
又，由於使用多孔性片材，故可抑制對電子零件或黏接材料進行加熱時所產生的煙氣附著在接合前端部，或進入至第1抽吸孔及第2抽吸孔。因此，就此方面而言，可抑制接合工具受到污染，從而可使維護性進一步提高。
本發明並不限定於所述實施形態，可進行各種變形而應用。
在所述實施形態中，已說明將接合前端部42的錐形側面46設置在接合面44的各邊上的實施方式，但不需要在所有的邊上設置錐形側面46，亦可僅在相對向的兩條邊上設置錐形側面。此時，只要在相對向的兩條邊的各錐形側面上分別設置一個以上的第2抽吸孔即可。
在所述實施形態中，已說明在錐形側面46a~錐形側面46d之中相對向的兩個錐形側面46a、錐形側面46c上設置第2抽吸孔52、第2抽吸孔54的實施方式，但除所述實施方式以外，亦可在另一對相對向的兩個錐形側面46b、錐形側面46d上亦設置第2抽吸孔。
在所述實施形態中，已說明分別設置多個第1抽吸孔50及第2抽吸孔52、第2抽吸孔54的實施方式，但設置在接合面44、錐形側面46a及錐形側面46c上的抽吸孔亦可分別各為一個。
在所述實施形態中，已說明片材載置平台17兼用於多孔性片材130的供給及回收的實施方式，但亦可分為用以供給多孔性片材130的平台、及用以回收多孔性片材130的平台。此時，各平台的片材載置部的構成亦可為相同。
在所述實施形態中，是以對半導體芯片100進行倒裝接合的實施方式為例進行說明，但亦可將本發明應用於仰面接合(face up bonding)。此時，在半導體芯片100的第2主面102b與 基板110相對向的方向上，將半導體芯片100接合於基板110。
又，在所述實施形態中，作為進行接合的半導體芯片100的一例，已說明在第1主面102a上設置電極墊104及凸塊電極106的實施方式，但亦可將包含貫通兩個主面的貫通電極的半導體芯片接合於基板110上。此時，亦可在基板110的搭載區域內使半導體芯片跨多段堆疊，在各段內分別對多個半導體芯片進行統一接合。
又，作為接合對象的電子零件的一例並不限於半導體芯片，亦可將封裝有半導體芯片的半導體裝置接合於基板上。或者，電子零件既可為主動元件或被動元件中的任一者，亦可為其他零件。
(第2實施形態)
在第1實施形態中，是在接合工具與半導體芯片之間夾著具有透氣性的多孔性片材而將半導體芯片接合於基板110上，而在本實施形態中，與第1實施形態的不同點是在不具有透氣性的片材上開設透氣孔而使所述片材具有透氣性。以下，以與第1實施形態的不同點為中心進行說明。
圖11是表示本發明的第2實施形態的接合裝置的圖。圖11所示的本實施形態的接合裝置10A包括開孔機構70。所述開孔機構70是在接合前端部42所保持的上爬防止用的片材140上開設透氣孔。片材140是不具有透氣性的例如聚丙烯、聚酯、氯乙烯、聚醯亞胺等的樹脂片材，但其材質可無限定地使用。
開孔機構70設置在接合頭18可沿XY方向移動的範圍內。開孔機構70包括與圖3所示的第1抽吸孔50相對應地在片材140上開設透氣孔的多個針構件70a。針構件70a藉由與開孔機構70一併藉由未圖示的驅動機構而沿Z方向上升及下降，貫通保持於接合工具40上的片材140，而在所述片材140上開設透氣孔，所述接合工具40是停止在開孔機構70的正上方。
在此處，形成於接合前端部42的第2抽吸孔52是為了抑制保持在接合工具40上的片材140的褶皺、下垂而設置。因此，即使在片材140的與第2抽吸孔52、第2抽吸孔54相對應的部位上未藉由開孔機構70而開設透氣孔，亦可藉由接合工具40來吸附保持半導體芯片100。再者，當然，只要可抑制片材140的褶皺、下垂，亦可開設與第2抽吸孔52相對應的透氣孔。
又，開孔機構70亦可設為不具有驅動機構而固定地配置在接合裝置10A上的構成。當設為所述構成時，藉由接合工具40相對於開孔機構70下降及上升而在片材140上開設透氣孔。
此外，透氣孔亦可不將各個透氣孔與一個第1抽吸孔50相對應地開設在片材140上，或者亦可與多個第1抽吸孔50相對應地開設一個透氣孔。當設為所述構成時，亦可在接合前端部42形成具有較針構件70a的直徑更大的直徑的孔，在片材140上開設與所述孔相對應的透氣孔。又，亦可形成與接合前端部42連通的溝槽，並且與所述溝槽相對應地將針構件70a設為中空形狀，在片材140上形成與所述溝槽及中空形狀相對應的形狀的開口孔。
根據本實施形態，在為了抑制上爬而採用不具有透氣性的片材140的構成中，亦可有效抑制保持於接合工具40上的片材140的褶皺、下垂。
(第3實施形態)
第2實施形態的開孔機構70是在保持於接合工具40上的狀態下在片材140上開設透氣孔，但本實施形態的開孔機構71的不同點是在載置於片材載置平台17上的狀態下在片材140上開設透氣孔。以下，以與第2實施形態的不同點為中心進行說明。
圖12是表示本發明的第3實施形態的接合裝置的圖。圖12所示的本實施形態的接合裝置10B包括具有多個針構件71a的開孔機構71。在片材載置平台17上，形成有與多個針構件71a相對應的未圖示的孔。開孔機構71藉由未圖示的驅動機構而相對於片材載置平台17沿Z方向上升或下降，並使針構件71a貫通於片材140而形成透氣孔。再者，亦可將開孔機構71固定在接合裝置上，使片材載置平台17相對於開孔機構71驅動藉此在片材140上形成透氣孔。
接合工具40吸附保持形成有透氣孔的片材140，且經由所述片材140將半導體芯片100接合於基板110上。
此外，接合裝置亦可設為如下實施方式：藉由使片材140單片化的未圖示的單片化機構，而切取片材140加以單片化，並且形成透氣孔。又，亦可另外設置在片材140上形成透氣孔的機構。
又，作為上爬防止用的片材，亦可使用規則地或不規則地一致地預先形成有多個透氣孔的片材，所述多個透氣孔是用以對包含不具有透氣性的材質的片材賦予透氣性。
又，已說明將多個第1抽吸孔50設置在接合面44的中央區域的內容，但多個第1抽吸孔50亦可例如規則地或不規則地設置在接合面44的緣部附近或整個接合面44上。
又，第1抽吸孔50、第2抽吸孔52亦可為矩形等多邊形的孔或長孔。此外，第1抽吸孔50、第2抽吸孔52亦可為與接合面44連通而設置的溝槽形狀。
又，接合工具40的錐形側面46a~錐形側面46d亦可僅設置在相對向的兩個面上。同樣地，片材載置部60的錐形側面66a~錐形側面66d亦可僅設置在相對向的兩個面上。
通過所述發明的實施形態而說明的實施方式可根據用途來適當組合，或者加以變更或改良而使用，本發明並不限定於所述實施形態的記載。自申請專利範圍的記載當知，此種組合或者加以變更或改良的形態亦可包含在本發明的技術範圍內。

Claims (13)

  1. 一種接合裝置，將電子零件經由黏接材料熱壓接於基板或其他電子零件上，所述接合裝置包括：接合工具，包含接合前端部，所述接合前端部包含接合面以及錐形側面，所述接合面設置有隔著具有透氣性的單片狀的透氣性片材而吸附所述電子零件的第1抽吸孔，所述錐形側面形成為朝向所述接合面前端變細的錐狀，且設置有吸附所述透氣性片材的第2抽吸孔；以及接合控制部，對所述第1抽吸孔及所述第2抽吸孔相互獨立地進行控制。
  2. 如申請專利範圍第1項所述的接合裝置，其中所述接合面呈矩形狀，所述錐形側面至少分別設置在所述接合面的相互對向的各邊上。
  3. 如申請專利範圍第1項或第2項所述的接合裝置，其中所述接合面在俯視所述接合面時大於所述電子零件。
  4. 如申請專利範圍第1項或第2項所述的接合裝置，其中更包括：至少一個片材載置部，載置所述透氣性片材，以便對所述接合工具供給或回收所述透氣性片材。
  5. 如申請專利範圍第4項所述的接合裝置，其中所述至少一個片材載置部包括：底面，支撐所述透氣性片材；以及錐形側面，形成為越遠離所述底面越擴大的錐狀。
  6. 如申請專利範圍第5項所述的接合裝置，其中所述片材載置部的所述底面呈矩形狀，所述片材載置部的所述錐形側面至少分別設置在所述底面的相互對向的各邊上。
  7. 如申請專利範圍第5項所述的接合裝置，其中在所述片材載置部的所述底面上設置有回收所述透氣性片材的片材回收孔。
  8. 如申請專利範圍第1項或第2項所述的接合裝置，其中所述透氣性片材藉由在不具有透氣性的片材上所開設的透氣孔而具有透氣性，所述接合裝置更包括：開孔機構，在所述不具有透氣性的片材上開設所述透氣孔。
  9. 如申請專利範圍第1項或第2項所述的接合裝置，其中所述透氣性片材為多孔性片材。
  10. 一種接合方法，包括如下步驟：準備接合工具，所述接合工具包括接合前端部，所述接合前端部包含接合面以及錐形側面，所述接合面設置有隔著具有透氣性的單片狀的透氣性片材而吸附電子零件的第1抽吸孔，所述錐形側面形成為朝向所述接合面前端變細的錐狀，且設置有吸附所述透氣性片材的第2抽吸孔； 將所述第1抽吸孔及所述第2抽吸孔的抽吸動作設為導通狀態，隔著所述透氣性片材將所述電子零件吸附於所述接合面上；藉由所述接合工具將所述電子零件經由黏接材料熱壓接於基板或其他電子零件上；以及一面將所述第2抽吸孔的抽吸動作設為導通狀態，一面將所述第1抽吸孔的抽吸動作設為斷開狀態或將排氣動作設為導通狀態，使所述電子零件自所述接合面脫離。
  11. 如申請專利範圍第10項所述的接合方法，其中更包括如下步驟：準備載置所述透氣性片材的至少一個片材載置部；且所述至少一個片材載置部包括：底面，支撐所述透氣性片材；以及錐形側面，形成為越遠離所述底面越擴大的錐狀。
  12. 如申請專利範圍第10項或第11項所述的接合方法，其中所述透氣性片材藉由在不具有透氣性的片材上所開設的透氣孔而具有透氣性，所述接合方法更包括如下步驟：藉由開孔機構在所述不具有透氣性的片材上開設所述透氣孔。
  13. 如申請專利範圍第10項或第11項所述的接合方法，其中所述透氣性片材為多孔性片材。
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US20210005570A1 (en) 2021-01-07
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