TWI667707B - Dry etching method - Google Patents

Dry etching method Download PDF

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Publication number
TWI667707B
TWI667707B TW103122642A TW103122642A TWI667707B TW I667707 B TWI667707 B TW I667707B TW 103122642 A TW103122642 A TW 103122642A TW 103122642 A TW103122642 A TW 103122642A TW I667707 B TWI667707 B TW I667707B
Authority
TW
Taiwan
Prior art keywords
etching
sige
gas
layer
film
Prior art date
Application number
TW103122642A
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English (en)
Chinese (zh)
Other versions
TW201515092A (zh
Inventor
申賾
小野哲郎
安並久夫
Original Assignee
日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201515092A publication Critical patent/TW201515092A/zh
Application granted granted Critical
Publication of TWI667707B publication Critical patent/TWI667707B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW103122642A 2013-10-08 2014-07-01 Dry etching method TWI667707B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-210656 2013-10-08
JP2013210656A JP6138653B2 (ja) 2013-10-08 2013-10-08 ドライエッチング方法

Publications (2)

Publication Number Publication Date
TW201515092A TW201515092A (zh) 2015-04-16
TWI667707B true TWI667707B (zh) 2019-08-01

Family

ID=52777282

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103122642A TWI667707B (zh) 2013-10-08 2014-07-01 Dry etching method

Country Status (4)

Country Link
US (2) US20150099368A1 (enExample)
JP (1) JP6138653B2 (enExample)
KR (2) KR20150041567A (enExample)
TW (1) TWI667707B (enExample)

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US10043674B1 (en) * 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10600889B2 (en) 2017-12-22 2020-03-24 International Business Machines Corporation Nanosheet transistors with thin inner spacers and tight pitch gate
JP6928548B2 (ja) * 2017-12-27 2021-09-01 東京エレクトロン株式会社 エッチング方法
US11011383B2 (en) 2018-01-22 2021-05-18 Tokyo Electron Limited Etching method
JP7145740B2 (ja) * 2018-01-22 2022-10-03 東京エレクトロン株式会社 エッチング方法
US10892158B2 (en) 2019-04-01 2021-01-12 Hitachi High-Tech Corporation Manufacturing method of a semiconductor device and a plasma processing apparatus
KR102258361B1 (ko) * 2019-09-10 2021-05-28 포항공과대학교 산학협력단 펄스형 전력을 사용한 플라즈마 활성종 생성방법
JP7345334B2 (ja) * 2019-09-18 2023-09-15 東京エレクトロン株式会社 エッチング方法及び基板処理システム
KR102851015B1 (ko) * 2019-10-29 2025-08-28 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 장치 및 나노 와이어 또는 나노 시트의 트랜지스터의 제조 방법
WO2021181613A1 (ja) * 2020-03-12 2021-09-16 株式会社日立ハイテク プラズマ処理方法
JP7360979B2 (ja) * 2020-03-19 2023-10-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置
EP4139952A1 (en) * 2020-04-21 2023-03-01 Praxair Technology, Inc. Novel methods for gas phase selective etching of silicon-germanium layers
WO2022039849A1 (en) * 2020-08-18 2022-02-24 Applied Materials, Inc. Methods for etching structures and smoothing sidewalls
US11527414B2 (en) 2020-08-18 2022-12-13 Applied Materials, Inc. Methods for etching structures with oxygen pulsing
US11538690B2 (en) 2021-02-09 2022-12-27 Tokyo Electron Limited Plasma etching techniques
WO2022264380A1 (ja) 2021-06-17 2022-12-22 株式会社日立ハイテク プラズマ処理方法および半導体装置の製造方法
US20230260802A1 (en) * 2022-02-17 2023-08-17 Applied Materials, Inc. Highly selective silicon etching
US12002683B2 (en) * 2022-04-05 2024-06-04 Tokyo Electron Limited Lateral etching of silicon
US12272558B2 (en) 2022-05-09 2025-04-08 Tokyo Electron Limited Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification
JP7831260B2 (ja) * 2022-12-09 2026-03-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20240282585A1 (en) * 2023-02-21 2024-08-22 Applied Materials, Inc. Treatments to improve etched silicon-and-germanium-containing material surface roughness
US20260190883A1 (en) 2023-07-06 2026-07-02 Hitachi High-Tech Corporation Etching method
US20250095984A1 (en) * 2023-09-20 2025-03-20 Applied Materials, Inc. In-situ sidewall passivation toward the bottom of high aspect ratio features
TW202542953A (zh) * 2024-01-18 2025-11-01 美商應用材料股份有限公司 Nf3超低流量
TWI921098B (zh) * 2024-03-13 2026-04-01 南韓商Ｔｅｓ股份有限公司 基板處理方法
US20250357132A1 (en) * 2024-05-17 2025-11-20 Applied Materials, Inc. Etching silicon-containing material and silicon-and-germanium-containing material
US20260052918A1 (en) * 2024-08-15 2026-02-19 Applied Materials, Inc. Selective etching of silicon-and-germanium-containing material

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US20130119018A1 (en) * 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
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US20080073635A1 (en) * 2006-09-21 2008-03-27 Masahiro Kiyotoshi Semiconductor Memory and Method of Manufacturing the Same
US20130119018A1 (en) * 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
US20130153970A1 (en) * 2011-12-20 2013-06-20 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Transistor structure, method for manufacturing a transistor structure, force-measuring system

Also Published As

Publication number Publication date
US20160307765A1 (en) 2016-10-20
KR20150041567A (ko) 2015-04-16
US20150099368A1 (en) 2015-04-09
JP6138653B2 (ja) 2017-05-31
TW201515092A (zh) 2015-04-16
KR20160100287A (ko) 2016-08-23
US11018014B2 (en) 2021-05-25
JP2015076459A (ja) 2015-04-20
KR101826642B1 (ko) 2018-02-07

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