KR20150041567A - 드라이 에칭 방법 - Google Patents

드라이 에칭 방법 Download PDF

Info

Publication number
KR20150041567A
KR20150041567A KR20140091132A KR20140091132A KR20150041567A KR 20150041567 A KR20150041567 A KR 20150041567A KR 20140091132 A KR20140091132 A KR 20140091132A KR 20140091132 A KR20140091132 A KR 20140091132A KR 20150041567 A KR20150041567 A KR 20150041567A
Authority
KR
South Korea
Prior art keywords
etching
gas
sige
layer
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR20140091132A
Other languages
English (en)
Korean (ko)
Inventor
제 션
데츠오 오노
히사오 야스나미
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20150041567A publication Critical patent/KR20150041567A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H10W20/095—
    • H10W20/096—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR20140091132A 2013-10-08 2014-07-18 드라이 에칭 방법 Ceased KR20150041567A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-210656 2013-10-08
JP2013210656A JP6138653B2 (ja) 2013-10-08 2013-10-08 ドライエッチング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020160102185A Division KR101826642B1 (ko) 2013-10-08 2016-08-11 드라이 에칭 방법

Publications (1)

Publication Number Publication Date
KR20150041567A true KR20150041567A (ko) 2015-04-16

Family

ID=52777282

Family Applications (2)

Application Number Title Priority Date Filing Date
KR20140091132A Ceased KR20150041567A (ko) 2013-10-08 2014-07-18 드라이 에칭 방법
KR1020160102185A Active KR101826642B1 (ko) 2013-10-08 2016-08-11 드라이 에칭 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020160102185A Active KR101826642B1 (ko) 2013-10-08 2016-08-11 드라이 에칭 방법

Country Status (4)

Country Link
US (2) US20150099368A1 (enExample)
JP (1) JP6138653B2 (enExample)
KR (2) KR20150041567A (enExample)
TW (1) TWI667707B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200116407A (ko) * 2019-04-01 2020-10-12 주식회사 히타치하이테크 반도체 소자의 제조 방법 및 플라스마 처리 장치
KR20220070294A (ko) * 2019-10-29 2022-05-30 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 장치 및 나노 와이어 또는 나노 시트의 트랜지스터의 제조 방법
KR20230004626A (ko) * 2020-04-21 2023-01-06 프랙스에어 테크놀로지, 인코포레이티드 실리콘-게르마늄 층의 기상 선택적 식각을 위한 신규한 방법

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6516542B2 (ja) * 2015-04-20 2019-05-22 東京エレクトロン株式会社 被エッチング層をエッチングする方法
US10388729B2 (en) * 2016-05-16 2019-08-20 Globalfoundries Inc. Devices and methods of forming self-aligned, uniform nano sheet spacers
JP6619703B2 (ja) * 2016-06-28 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス エッチング方法
US10043674B1 (en) * 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10600889B2 (en) 2017-12-22 2020-03-24 International Business Machines Corporation Nanosheet transistors with thin inner spacers and tight pitch gate
JP6928548B2 (ja) * 2017-12-27 2021-09-01 東京エレクトロン株式会社 エッチング方法
JP7145740B2 (ja) * 2018-01-22 2022-10-03 東京エレクトロン株式会社 エッチング方法
US11011383B2 (en) 2018-01-22 2021-05-18 Tokyo Electron Limited Etching method
KR102258361B1 (ko) * 2019-09-10 2021-05-28 포항공과대학교 산학협력단 펄스형 전력을 사용한 플라즈마 활성종 생성방법
JP7345334B2 (ja) * 2019-09-18 2023-09-15 東京エレクトロン株式会社 エッチング方法及び基板処理システム
WO2021181613A1 (ja) * 2020-03-12 2021-09-16 株式会社日立ハイテク プラズマ処理方法
JP7360979B2 (ja) * 2020-03-19 2023-10-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2022039848A1 (en) * 2020-08-18 2022-02-24 Applied Materials, Inc. Methods for etching structures with oxygen pulsing
WO2022039849A1 (en) * 2020-08-18 2022-02-24 Applied Materials, Inc. Methods for etching structures and smoothing sidewalls
US11538690B2 (en) * 2021-02-09 2022-12-27 Tokyo Electron Limited Plasma etching techniques
JP7320135B2 (ja) 2021-06-17 2023-08-02 株式会社日立ハイテク プラズマ処理方法および半導体装置の製造方法
US20230260802A1 (en) * 2022-02-17 2023-08-17 Applied Materials, Inc. Highly selective silicon etching
US12272558B2 (en) 2022-05-09 2025-04-08 Tokyo Electron Limited Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification
JP2024083014A (ja) * 2022-12-09 2024-06-20 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20240282585A1 (en) * 2023-02-21 2024-08-22 Applied Materials, Inc. Treatments to improve etched silicon-and-germanium-containing material surface roughness
WO2025009167A1 (ja) 2023-07-06 2025-01-09 株式会社日立ハイテク エッチング方法
WO2025155797A1 (en) * 2024-01-18 2025-07-24 Applied Materials, Inc. Nf3 ultra low flow

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2654003B2 (ja) * 1986-06-30 1997-09-17 株式会社東芝 ドライエツチング方法
US5155657A (en) * 1991-10-31 1992-10-13 International Business Machines Corporation High area capacitor formation using material dependent etching
JP4056195B2 (ja) 2000-03-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3974356B2 (ja) * 2001-08-31 2007-09-12 芝浦メカトロニクス株式会社 ＳｉＧｅ膜のエッチング方法
US7317434B2 (en) * 2004-12-03 2008-01-08 Dupont Displays, Inc. Circuits including switches for electronic devices and methods of using the electronic devices
JP4738194B2 (ja) * 2006-02-09 2011-08-03 芝浦メカトロニクス株式会社 エッチング方法及び半導体装置の製造方法
KR20170116213A (ko) * 2006-04-10 2017-10-18 솔베이 플루오르 게엠베하 에칭 방법
JP2008078404A (ja) * 2006-09-21 2008-04-03 Toshiba Corp 半導体メモリ及びその製造方法
US7863124B2 (en) * 2007-05-10 2011-01-04 International Business Machines Corporation Residue free patterned layer formation method applicable to CMOS structures
US7485520B2 (en) * 2007-07-05 2009-02-03 International Business Machines Corporation Method of manufacturing a body-contacted finfet
JP2012521078A (ja) * 2009-03-17 2012-09-10 アイメック プラズマテクスチャ方法
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
KR20120073727A (ko) 2010-12-27 2012-07-05 삼성전자주식회사 스트레인드 반도체 영역을 포함하는 반도체 소자와 그 제조방법, 및 그것을 포함하는 전자 시스템
JP5774428B2 (ja) * 2011-09-28 2015-09-09 株式会社日立ハイテクノロジーズ ドライエッチング方法およびプラズマエッチング装置
TWI500066B (zh) 2011-07-27 2015-09-11 日立全球先端科技股份有限公司 Plasma processing device
US20130119018A1 (en) * 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
DE102011089261B4 (de) * 2011-12-20 2014-11-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transistorstruktur, Verfahren zur Herstellung einer Transistorstruktur, Kraftmesssystem
CN103311172A (zh) * 2012-03-16 2013-09-18 中芯国际集成电路制造(上海)有限公司 Soi衬底的形成方法
CN103531475A (zh) * 2012-07-03 2014-01-22 中国科学院微电子研究所 半导体器件及其制造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200116407A (ko) * 2019-04-01 2020-10-12 주식회사 히타치하이테크 반도체 소자의 제조 방법 및 플라스마 처리 장치
KR20220070294A (ko) * 2019-10-29 2022-05-30 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 장치 및 나노 와이어 또는 나노 시트의 트랜지스터의 제조 방법
US12165848B2 (en) 2019-10-29 2024-12-10 Tokyo Electron Limited Substrate processing method, substrate processing apparatus, and method for producing nanowire or nanosheet transistor
KR20230004626A (ko) * 2020-04-21 2023-01-06 프랙스에어 테크놀로지, 인코포레이티드 실리콘-게르마늄 층의 기상 선택적 식각을 위한 신규한 방법
US12494374B2 (en) 2020-04-21 2025-12-09 Praxair Technology, Inc. Methods for gas phase selective etching of silicon-germanium layers

Also Published As

Publication number Publication date
US20160307765A1 (en) 2016-10-20
JP6138653B2 (ja) 2017-05-31
TWI667707B (zh) 2019-08-01
TW201515092A (zh) 2015-04-16
US20150099368A1 (en) 2015-04-09
JP2015076459A (ja) 2015-04-20
KR101826642B1 (ko) 2018-02-07
US11018014B2 (en) 2021-05-25
KR20160100287A (ko) 2016-08-23

Similar Documents

Publication Publication Date Title
KR101826642B1 (ko) 드라이 에칭 방법
JP6035606B2 (ja) プラズマ処理方法およびプラズマ処理装置
JP7320135B2 (ja) プラズマ処理方法および半導体装置の製造方法
JP6298867B2 (ja) プラズマ処理方法およびプラズマ処理装置
US9018075B2 (en) Plasma processing method
US11398386B2 (en) Plasma etch processes
US8828882B2 (en) Method for forming a deep trench in a microelectronic component substrate
JP2013229351A (ja) ドライエッチング方法
JP5851349B2 (ja) プラズマエッチング方法及びプラズマエッチング装置
US12412747B2 (en) Post-processing of indium-containing compound semiconductors
CN112424912B (zh) 等离子处理方法
JP6579786B2 (ja) プラズマエッチング方法
US12334353B2 (en) Method and apparatus for plasma etching
JP6228860B2 (ja) 半導体装置の製造方法
JP2009076711A (ja) 半導体装置の製造方法
JP5774356B2 (ja) プラズマ処理方法
KR101285749B1 (ko) 드라이 에칭 방법 및 게이트 라스트 방식의 메탈 게이트 제조 방법
JP5792613B2 (ja) プラズマエッチング方法
TWI869908B (zh) 電漿處理方法
JP5918886B2 (ja) プラズマ処理方法
JP6184838B2 (ja) 半導体製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0601 Decision of rejection after re-examination

St.27 status event code: N-2-6-B10-B17-rex-PX0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

A107 Divisional application of patent
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000