TWI665329B - 具有注入組件的上部圓頂 - Google Patents

具有注入組件的上部圓頂 Download PDF

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Publication number
TWI665329B
TWI665329B TW104104103A TW104104103A TWI665329B TW I665329 B TWI665329 B TW I665329B TW 104104103 A TW104104103 A TW 104104103A TW 104104103 A TW104104103 A TW 104104103A TW I665329 B TWI665329 B TW I665329B
Authority
TW
Taiwan
Prior art keywords
flange plate
dome
holes
coupled
component
Prior art date
Application number
TW104104103A
Other languages
English (en)
Chinese (zh)
Other versions
TW201544622A (zh
Inventor
Paul Brillhart
布里哈特保羅
Anzhong Chang
常安中
Edric Tong
童艾德瑞克
Kin Pong Lo
勞建邦
James Francis MACK
麥克詹姆士法西斯
Zhiyuan Ye
葉祉淵
Kartik Shah
薛卡提克
Errol Antonio C. Sanchez
山契斯艾羅安東尼歐Ｃ
David K. Carlson
卡爾森大衛Ｋ
Satheesh Kuppurao
古波若沙堤西
Joseph M. Ranish
拉尼許喬瑟夫Ｍ
Original Assignee
Applied Materials, Inc.
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc., 美商應用材料股份有限公司 filed Critical Applied Materials, Inc.
Publication of TW201544622A publication Critical patent/TW201544622A/zh
Application granted granted Critical
Publication of TWI665329B publication Critical patent/TWI665329B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
TW104104103A 2014-02-14 2015-02-06 具有注入組件的上部圓頂 TWI665329B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201461940178P 2014-02-14 2014-02-14
US61/940,178 2014-02-14
US201461943625P 2014-02-24 2014-02-24
US61/943,625 2014-02-24
US201461992053P 2014-05-12 2014-05-12
US61/992,053 2014-05-12

Publications (2)

Publication Number Publication Date
TW201544622A TW201544622A (zh) 2015-12-01
TWI665329B true TWI665329B (zh) 2019-07-11

Family

ID=53797591

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104104103A TWI665329B (zh) 2014-02-14 2015-02-06 具有注入組件的上部圓頂

Country Status (7)

Country Link
US (2) US9845550B2 (https=)
JP (1) JP6542245B2 (https=)
KR (1) KR102381816B1 (https=)
CN (1) CN105981133B (https=)
SG (1) SG11201606004PA (https=)
TW (1) TWI665329B (https=)
WO (1) WO2015123022A1 (https=)

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TWI689619B (zh) * 2016-04-01 2020-04-01 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
US11670490B2 (en) * 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
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WO2020072241A1 (en) * 2018-10-01 2020-04-09 Applied Materials, Inc. Purged viewport for quartz dome in epitaxy reactor
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN115161764B (zh) * 2022-06-23 2024-02-06 江苏天芯微半导体设备有限公司 一种控温装置及其外延设备
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Also Published As

Publication number Publication date
JP6542245B2 (ja) 2019-07-10
US9845550B2 (en) 2017-12-19
US20150233016A1 (en) 2015-08-20
WO2015123022A1 (en) 2015-08-20
KR102381816B1 (ko) 2022-04-04
US10458040B2 (en) 2019-10-29
CN105981133B (zh) 2019-06-28
KR20160121563A (ko) 2016-10-19
SG11201606004PA (en) 2016-08-30
TW201544622A (zh) 2015-12-01
CN105981133A (zh) 2016-09-28
US20180066382A1 (en) 2018-03-08
JP2017511974A (ja) 2017-04-27

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