KR102381816B1 - 주입 어셈블리를 갖는 상부 돔 - Google Patents

주입 어셈블리를 갖는 상부 돔 Download PDF

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KR102381816B1
KR102381816B1 KR1020167025115A KR20167025115A KR102381816B1 KR 102381816 B1 KR102381816 B1 KR 102381816B1 KR 1020167025115 A KR1020167025115 A KR 1020167025115A KR 20167025115 A KR20167025115 A KR 20167025115A KR 102381816 B1 KR102381816 B1 KR 102381816B1
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coupled
flange plate
tubes
holes
dome
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KR20160121563A (ko
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폴 브릴하트
안중 창
에드릭 통
킨 퐁 로
제임스 프란시스 맥
즈위안 예
카르틱 샤
에롤 안토니오 씨. 산체스
데이비드 케이. 칼슨
사티쉬 굽푸라오
조세프 엠. 라니쉬
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H01L21/02—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H01L21/67115—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020167025115A 2014-02-14 2015-01-28 주입 어셈블리를 갖는 상부 돔 Active KR102381816B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201461940178P 2014-02-14 2014-02-14
US61/940,178 2014-02-14
US201461943625P 2014-02-24 2014-02-24
US61/943,625 2014-02-24
US201461992053P 2014-05-12 2014-05-12
US61/992,053 2014-05-12
PCT/US2015/013347 WO2015123022A1 (en) 2014-02-14 2015-01-28 Upper dome with injection assembly

Publications (2)

Publication Number Publication Date
KR20160121563A KR20160121563A (ko) 2016-10-19
KR102381816B1 true KR102381816B1 (ko) 2022-04-04

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Country Link
US (2) US9845550B2 (https=)
JP (1) JP6542245B2 (https=)
KR (1) KR102381816B1 (https=)
CN (1) CN105981133B (https=)
SG (1) SG11201606004PA (https=)
TW (1) TWI665329B (https=)
WO (1) WO2015123022A1 (https=)

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TWI689619B (zh) * 2016-04-01 2020-04-01 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
US11670490B2 (en) * 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
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WO2020072241A1 (en) * 2018-10-01 2020-04-09 Applied Materials, Inc. Purged viewport for quartz dome in epitaxy reactor
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
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US12492487B2 (en) * 2023-04-28 2025-12-09 Applied Materials, Inc. Movable central reflectors of semiconductor processing equipment, and related systems and methods

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Also Published As

Publication number Publication date
JP6542245B2 (ja) 2019-07-10
US9845550B2 (en) 2017-12-19
US20150233016A1 (en) 2015-08-20
WO2015123022A1 (en) 2015-08-20
US10458040B2 (en) 2019-10-29
TWI665329B (zh) 2019-07-11
CN105981133B (zh) 2019-06-28
KR20160121563A (ko) 2016-10-19
SG11201606004PA (en) 2016-08-30
TW201544622A (zh) 2015-12-01
CN105981133A (zh) 2016-09-28
US20180066382A1 (en) 2018-03-08
JP2017511974A (ja) 2017-04-27

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