TWI665329B - 具有注入組件的上部圓頂 - Google Patents

具有注入組件的上部圓頂 Download PDF

Info

Publication number
TWI665329B
TWI665329B TW104104103A TW104104103A TWI665329B TW I665329 B TWI665329 B TW I665329B TW 104104103 A TW104104103 A TW 104104103A TW 104104103 A TW104104103 A TW 104104103A TW I665329 B TWI665329 B TW I665329B
Authority
TW
Taiwan
Prior art keywords
flange plate
dome
holes
coupled
component
Prior art date
Application number
TW104104103A
Other languages
English (en)
Chinese (zh)
Other versions
TW201544622A (zh
Inventor
布里哈特保羅
常安中
童艾德瑞克
勞建邦
麥克詹姆士法西斯
葉祉淵
薛卡提克
山契斯艾羅安東尼歐Ｃ
卡爾森大衛Ｋ
古波若沙堤西
拉尼許喬瑟夫Ｍ
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201544622A publication Critical patent/TW201544622A/zh
Application granted granted Critical
Publication of TWI665329B publication Critical patent/TWI665329B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
TW104104103A 2014-02-14 2015-02-06 具有注入組件的上部圓頂 TWI665329B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201461940178P 2014-02-14 2014-02-14
US61/940,178 2014-02-14
US201461943625P 2014-02-24 2014-02-24
US61/943,625 2014-02-24
US201461992053P 2014-05-12 2014-05-12
US61/992,053 2014-05-12

Publications (2)

Publication Number Publication Date
TW201544622A TW201544622A (zh) 2015-12-01
TWI665329B true TWI665329B (zh) 2019-07-11

Family

ID=53797591

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104104103A TWI665329B (zh) 2014-02-14 2015-02-06 具有注入組件的上部圓頂

Country Status (7)

Country Link
US (2) US9845550B2 (enExample)
JP (1) JP6542245B2 (enExample)
KR (1) KR102381816B1 (enExample)
CN (1) CN105981133B (enExample)
SG (1) SG11201606004PA (enExample)
TW (1) TWI665329B (enExample)
WO (1) WO2015123022A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015123022A1 (en) * 2014-02-14 2015-08-20 Applied Materials, Inc. Upper dome with injection assembly
US10053777B2 (en) * 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
KR102451499B1 (ko) * 2014-05-16 2022-10-06 어플라이드 머티어리얼스, 인코포레이티드 샤워헤드 설계
TWI677593B (zh) * 2016-04-01 2019-11-21 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
US11670490B2 (en) * 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
JP7060427B2 (ja) * 2018-03-29 2022-04-26 イビデン株式会社 Ｃｖｄ装置用ノズル、ｃｖｄ装置およびｃｖｄ膜の製造方法
WO2020072241A1 (en) * 2018-10-01 2020-04-09 Applied Materials, Inc. Purged viewport for quartz dome in epitaxy reactor
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN115161764B (zh) * 2022-06-23 2024-02-06 江苏天芯微半导体设备有限公司 一种控温装置及其外延设备
US12492487B2 (en) * 2023-04-28 2025-12-09 Applied Materials, Inc. Movable central reflectors of semiconductor processing equipment, and related systems and methods

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130019803A1 (en) * 2011-07-22 2013-01-24 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2707719A (en) 1954-04-23 1955-05-03 Leibowitz Jack Richard Apparatus for the vacuum melting of high purity materials
US3717439A (en) * 1970-11-18 1973-02-20 Tokyo Shibaura Electric Co Vapour phase reaction apparatus
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
DE2951667A1 (de) * 1979-12-21 1981-07-02 Merck Patent Gmbh, 6100 Darmstadt Transport- und entnahmevorrichtung
US4347431A (en) * 1980-07-25 1982-08-31 Bell Telephone Laboratories, Inc. Diffusion furnace
DE3130680A1 (de) 1981-08-03 1983-02-17 Heraeus Quarzschmelze Gmbh, 6450 Hanau "rohrfoermiger koerper mit flansch"
JPH0693452B2 (ja) * 1986-01-29 1994-11-16 株式会社日立製作所 枚葉式薄膜形成法および薄膜形成装置
US5156812A (en) * 1990-08-10 1992-10-20 Corning Incorporated Modular solvent extractor/concentrator apparatus with in-line drying adaptor
US5098662B1 (en) * 1990-08-10 1994-04-19 Corning Inc Modular solvent extractory concentrator apparatus
JPH0544038A (ja) * 1991-08-14 1993-02-23 Toshiba Corp Ｃｖｄ装置
JPH05299370A (ja) * 1992-04-23 1993-11-12 Tokyo Electron Tohoku Ltd 熱処理装置
JPH06283500A (ja) * 1993-03-30 1994-10-07 Hitachi Ltd 半導体製造装置および半導体装置
JP3171222B2 (ja) * 1994-06-14 2001-05-28 日本電気株式会社 マイクロ波プラズマ処理装置
USH1960H1 (en) * 1995-04-10 2001-06-05 Alpha Therapeutic Corp. Automated method and system for testing blood samples
JPH0922875A (ja) * 1995-07-06 1997-01-21 Nissin Electric Co Ltd 薄膜気相成長装置
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
JPH09246195A (ja) * 1996-03-07 1997-09-19 Nissin Electric Co Ltd 縦型気相成長装置
US6031211A (en) * 1997-07-11 2000-02-29 Concept Systems Design, Inc. Zone heating system with feedback control
US6706334B1 (en) * 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US6086679A (en) * 1997-10-24 2000-07-11 Quester Technology, Inc. Deposition systems and processes for transport polymerization and chemical vapor deposition
US6360562B1 (en) * 1998-02-24 2002-03-26 Superior Micropowders Llc Methods for producing glass powders
US6027569A (en) * 1998-06-03 2000-02-22 Seh America, Inc. Gas injection systems for a LPCVD furnace
JP2000286251A (ja) * 1999-03-31 2000-10-13 Japan Storage Battery Co Ltd 紫外線処理装置
JP4313470B2 (ja) * 1999-07-07 2009-08-12 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
JP2002057150A (ja) * 2000-08-08 2002-02-22 Crystage Co Ltd 薄膜形成装置
JP3775500B2 (ja) * 2002-03-12 2006-05-17 ソニー株式会社 半導体薄膜の形成方法及びその装置、並びに触媒ノズル
KR100837474B1 (ko) * 2003-03-04 2008-06-12 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리장치 및 디바이스의 제조방법
US20050082002A1 (en) * 2003-08-29 2005-04-21 Yuusuke Sato Method of cleaning a film-forming apparatus and film-forming apparatus
JPWO2005083760A1 (ja) * 2004-03-01 2007-11-29 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
KR100782369B1 (ko) * 2004-11-11 2007-12-07 삼성전자주식회사 반도체 제조장치
JP4761442B2 (ja) * 2005-08-08 2011-08-31 芝浦メカトロニクス株式会社 プラズマ発生装置及びプラズマ処理装置
US20070084406A1 (en) * 2005-10-13 2007-04-19 Joseph Yudovsky Reaction chamber with opposing pockets for gas injection and exhaust
US20070084408A1 (en) * 2005-10-13 2007-04-19 Applied Materials, Inc. Batch processing chamber with diffuser plate and injector assembly
KR101353334B1 (ko) * 2006-11-22 2014-02-18 소이텍 갈륨 질화물 증착에서의 반응 가스 감소
US20080124670A1 (en) * 2006-11-29 2008-05-29 Frank Jansen Inductively heated trap
US8610033B1 (en) * 2007-03-29 2013-12-17 Moore Epitaxial, Inc. Rapid thermal process reactor utilizing a low profile dome
JP4972444B2 (ja) * 2007-03-30 2012-07-11 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
US20090194024A1 (en) * 2008-01-31 2009-08-06 Applied Materials, Inc. Cvd apparatus
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
JP2010084157A (ja) * 2008-09-29 2010-04-15 Tokyo Electron Ltd ガス導入機構及び成膜装置
US20100117309A1 (en) * 2008-11-13 2010-05-13 Applied Materials, Inc. Sealing apparatus for a process chamber
WO2010058813A1 (ja) * 2008-11-21 2010-05-27 国立大学法人長岡技術科学大学 基板処理方法及び基板処理装置
JP5470948B2 (ja) * 2009-03-23 2014-04-16 株式会社明電舎 オゾン供給装置
JP5317852B2 (ja) * 2009-06-29 2013-10-16 株式会社クォークテクノロジー 紫外線照射装置
KR200479181Y1 (ko) * 2009-09-10 2015-12-30 램 리써치 코포레이션 플라즈마 처리 장치의 교체가능한 상부 체임버 부품
JP2011171450A (ja) * 2010-02-17 2011-09-01 Nuflare Technology Inc 成膜装置および成膜方法
US9570328B2 (en) * 2010-06-30 2017-02-14 Applied Materials, Inc. Substrate support for use with multi-zonal heating sources
US8133349B1 (en) * 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
JP2012142324A (ja) * 2010-12-28 2012-07-26 Japan Steel Works Ltd:The プラズマ処理方法及び処理装置
US20120270384A1 (en) * 2011-04-22 2012-10-25 Applied Materials, Inc. Apparatus for deposition of materials on a substrate
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US8960235B2 (en) * 2011-10-28 2015-02-24 Applied Materials, Inc. Gas dispersion apparatus
US20130269613A1 (en) * 2012-03-30 2013-10-17 Applied Materials, Inc. Methods and apparatus for generating and delivering a process gas for processing a substrate
DE112013003706T5 (de) * 2012-07-27 2015-04-09 Applied Materials, Inc. Verfahren und Vorrichtung zum Abgeben von Prozessgasen an ein Substrat
US20140026816A1 (en) 2012-07-27 2014-01-30 Applied Materials, Inc. Multi-zone quartz gas distribution apparatus
US20140137801A1 (en) * 2012-10-26 2014-05-22 Applied Materials, Inc. Epitaxial chamber with customizable flow injection
US9587993B2 (en) * 2012-11-06 2017-03-07 Rec Silicon Inc Probe assembly for a fluid bed reactor
US11015244B2 (en) * 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
WO2015123022A1 (en) * 2014-02-14 2015-08-20 Applied Materials, Inc. Upper dome with injection assembly
US20150376789A1 (en) * 2014-03-11 2015-12-31 Tokyo Electron Limited Vertical heat treatment apparatus and method of operating vertical heat treatment apparatus
JP6307984B2 (ja) * 2014-03-31 2018-04-11 東京エレクトロン株式会社 基板処理装置
WO2015195256A1 (en) * 2014-06-18 2015-12-23 Applied Materials, Inc. One-piece injector assembly
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
WO2016059974A1 (ja) * 2014-10-17 2016-04-21 株式会社堀場製作所 ガス分析装置
US9982364B2 (en) * 2015-04-07 2018-05-29 Applied Materials, Inc. Process gas preheating systems and methods for double-sided multi-substrate batch processing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130019803A1 (en) * 2011-07-22 2013-01-24 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate

Also Published As

Publication number Publication date
US9845550B2 (en) 2017-12-19
TW201544622A (zh) 2015-12-01
CN105981133B (zh) 2019-06-28
CN105981133A (zh) 2016-09-28
KR102381816B1 (ko) 2022-04-04
US20180066382A1 (en) 2018-03-08
US20150233016A1 (en) 2015-08-20
US10458040B2 (en) 2019-10-29
JP2017511974A (ja) 2017-04-27
SG11201606004PA (en) 2016-08-30
WO2015123022A1 (en) 2015-08-20
KR20160121563A (ko) 2016-10-19
JP6542245B2 (ja) 2019-07-10

Similar Documents

Publication Publication Date Title
TWI665329B (zh) 具有注入組件的上部圓頂
US11537151B2 (en) Multi-channel flow ratio controller and processing chamber
US10170342B2 (en) Flow controlled liner having spatially distributed gas passages
TWI638070B (zh) 石英的上部及下部圓頂
CN105009273B (zh) 基座支撑部及包含基座支撑部的外延生长设备
US20160010208A1 (en) Design of susceptor in chemical vapor deposition reactor
TWI741295B (zh) 用於使預熱構件自定中心之裝置
TWI673396B (zh) 大氣磊晶沈積腔室
TWI686501B (zh) 用於epi腔室的上圓頂
US9842753B2 (en) Absorbing lamphead face
US20150020734A1 (en) Structure for improved gas activation for cross-flow type thermal cvd chamber
US20160033070A1 (en) Recursive pumping member