JP6542245B2 - 射出アセンブリ付きの上方ドーム - Google Patents

射出アセンブリ付きの上方ドーム Download PDF

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Publication number
JP6542245B2
JP6542245B2 JP2016551717A JP2016551717A JP6542245B2 JP 6542245 B2 JP6542245 B2 JP 6542245B2 JP 2016551717 A JP2016551717 A JP 2016551717A JP 2016551717 A JP2016551717 A JP 2016551717A JP 6542245 B2 JP6542245 B2 JP 6542245B2
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JP
Japan
Prior art keywords
dome
flange plate
holes
tube
gas
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Active
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JP2016551717A
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English (en)
Japanese (ja)
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JP2017511974A (ja
JP2017511974A5 (enExample
Inventor
ポール ブリルハート，
ポール ブリルハート，
アンチョン チャン，
アンチョン チャン，
エドリック トン，
エドリック トン，
キン ポン ロー，
キン ポン ロー，
ジェームズ フランシス マック，
ジェームズ フランシス マック，
ジーユエン イェー，
ジーユエン イェー，
カルティーク シャー，
カルティーク シャー，
エロール アントニオ シー． サンチェス，
エロール アントニオ シー． サンチェス，
デーヴィッド ケー． カールソン，
デーヴィッド ケー． カールソン，
サティシュ クップラオ，
サティシュ クップラオ，
ジョーセフ エム． ラニッシュ，
ジョーセフ エム． ラニッシュ，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2017511974A5 publication Critical patent/JP2017511974A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2016551717A 2014-02-14 2015-01-28 射出アセンブリ付きの上方ドーム Active JP6542245B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201461940178P 2014-02-14 2014-02-14
US61/940,178 2014-02-14
US201461943625P 2014-02-24 2014-02-24
US61/943,625 2014-02-24
US201461992053P 2014-05-12 2014-05-12
US61/992,053 2014-05-12
PCT/US2015/013347 WO2015123022A1 (en) 2014-02-14 2015-01-28 Upper dome with injection assembly

Publications (3)

Publication Number Publication Date
JP2017511974A JP2017511974A (ja) 2017-04-27
JP2017511974A5 JP2017511974A5 (enExample) 2018-03-08
JP6542245B2 true JP6542245B2 (ja) 2019-07-10

Family

ID=53797591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016551717A Active JP6542245B2 (ja) 2014-02-14 2015-01-28 射出アセンブリ付きの上方ドーム

Country Status (7)

Country Link
US (2) US9845550B2 (enExample)
JP (1) JP6542245B2 (enExample)
KR (1) KR102381816B1 (enExample)
CN (1) CN105981133B (enExample)
SG (1) SG11201606004PA (enExample)
TW (1) TWI665329B (enExample)
WO (1) WO2015123022A1 (enExample)

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TWI677593B (zh) * 2016-04-01 2019-11-21 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
US11670490B2 (en) * 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
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WO2020072241A1 (en) * 2018-10-01 2020-04-09 Applied Materials, Inc. Purged viewport for quartz dome in epitaxy reactor
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
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US12492487B2 (en) * 2023-04-28 2025-12-09 Applied Materials, Inc. Movable central reflectors of semiconductor processing equipment, and related systems and methods

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Also Published As

Publication number Publication date
US9845550B2 (en) 2017-12-19
TW201544622A (zh) 2015-12-01
CN105981133B (zh) 2019-06-28
CN105981133A (zh) 2016-09-28
KR102381816B1 (ko) 2022-04-04
US20180066382A1 (en) 2018-03-08
US20150233016A1 (en) 2015-08-20
US10458040B2 (en) 2019-10-29
JP2017511974A (ja) 2017-04-27
TWI665329B (zh) 2019-07-11
SG11201606004PA (en) 2016-08-30
WO2015123022A1 (en) 2015-08-20
KR20160121563A (ko) 2016-10-19

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