CN105981133B - 具有注入组件的上部圆顶 - Google Patents

具有注入组件的上部圆顶 Download PDF

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Publication number
CN105981133B
CN105981133B CN201580008431.5A CN201580008431A CN105981133B CN 105981133 B CN105981133 B CN 105981133B CN 201580008431 A CN201580008431 A CN 201580008431A CN 105981133 B CN105981133 B CN 105981133B
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China
Prior art keywords
dome
coupled
flange plate
holes
gas
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English (en)
Chinese (zh)
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CN105981133A (zh
Inventor
保罗·布里尔哈特
常安忠
埃德里克·唐
建·彭·陆
詹姆斯·弗朗西斯·麦克
叶祉渊
卡尔蒂克·沙阿
埃罗尔·安东尼奥·C·桑切斯
戴维·K·卡尔森
萨瑟施·库珀奥
约瑟夫·M·拉内什
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN105981133A publication Critical patent/CN105981133A/zh
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Publication of CN105981133B publication Critical patent/CN105981133B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
CN201580008431.5A 2014-02-14 2015-01-28 具有注入组件的上部圆顶 Active CN105981133B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201461940178P 2014-02-14 2014-02-14
US61/940,178 2014-02-14
US201461943625P 2014-02-24 2014-02-24
US61/943,625 2014-02-24
US201461992053P 2014-05-12 2014-05-12
US61/992,053 2014-05-12
PCT/US2015/013347 WO2015123022A1 (en) 2014-02-14 2015-01-28 Upper dome with injection assembly

Publications (2)

Publication Number Publication Date
CN105981133A CN105981133A (zh) 2016-09-28
CN105981133B true CN105981133B (zh) 2019-06-28

Family

ID=53797591

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580008431.5A Active CN105981133B (zh) 2014-02-14 2015-01-28 具有注入组件的上部圆顶

Country Status (7)

Country Link
US (2) US9845550B2 (enExample)
JP (1) JP6542245B2 (enExample)
KR (1) KR102381816B1 (enExample)
CN (1) CN105981133B (enExample)
SG (1) SG11201606004PA (enExample)
TW (1) TWI665329B (enExample)
WO (1) WO2015123022A1 (enExample)

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CN105981133B (zh) * 2014-02-14 2019-06-28 应用材料公司 具有注入组件的上部圆顶
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CN106463344B (zh) * 2014-05-16 2019-10-11 应用材料公司 喷头设计
TWI677593B (zh) * 2016-04-01 2019-11-21 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
US11670490B2 (en) 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
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CN112840444A (zh) * 2018-10-01 2021-05-25 应用材料公司 用于外延反应器的石英圆顶的净化的视口
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN115161764B (zh) * 2022-06-23 2024-02-06 江苏天芯微半导体设备有限公司 一种控温装置及其外延设备
US12492487B2 (en) * 2023-04-28 2025-12-09 Applied Materials, Inc. Movable central reflectors of semiconductor processing equipment, and related systems and methods

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Also Published As

Publication number Publication date
CN105981133A (zh) 2016-09-28
TWI665329B (zh) 2019-07-11
TW201544622A (zh) 2015-12-01
SG11201606004PA (en) 2016-08-30
US20150233016A1 (en) 2015-08-20
US9845550B2 (en) 2017-12-19
JP6542245B2 (ja) 2019-07-10
US10458040B2 (en) 2019-10-29
KR102381816B1 (ko) 2022-04-04
KR20160121563A (ko) 2016-10-19
JP2017511974A (ja) 2017-04-27
US20180066382A1 (en) 2018-03-08
WO2015123022A1 (en) 2015-08-20

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