TWI662148B - 含矽之氣體分配構件及其製造方法、噴淋頭電極、與半導體基板的處理方法 - Google Patents
含矽之氣體分配構件及其製造方法、噴淋頭電極、與半導體基板的處理方法 Download PDFInfo
- Publication number
- TWI662148B TWI662148B TW103104796A TW103104796A TWI662148B TW I662148 B TWI662148 B TW I662148B TW 103104796 A TW103104796 A TW 103104796A TW 103104796 A TW103104796 A TW 103104796A TW I662148 B TWI662148 B TW I662148B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon
- gas distribution
- carbon
- distribution member
- containing gas
- Prior art date
Links
- 238000009826 distribution Methods 0.000 title claims abstract description 143
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000012545 processing Methods 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 156
- 239000010703 silicon Substances 0.000 claims abstract description 155
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 150
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 102
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 101
- 239000000463 material Substances 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 195
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 46
- 230000008569 process Effects 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000004380 ashing Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 230000035699 permeability Effects 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims 8
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 150000003376 silicon Chemical class 0.000 abstract description 5
- 150000001721 carbon Chemical group 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 42
- 210000002381 plasma Anatomy 0.000 description 22
- 238000005273 aeration Methods 0.000 description 7
- 238000004891 communication Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000010288 cold spraying Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/766,096 US8883029B2 (en) | 2013-02-13 | 2013-02-13 | Method of making a gas distribution member for a plasma processing chamber |
| US13/766,096 | 2013-02-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201443273A TW201443273A (zh) | 2014-11-16 |
| TWI662148B true TWI662148B (zh) | 2019-06-11 |
Family
ID=51297720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103104796A TWI662148B (zh) | 2013-02-13 | 2014-02-13 | 含矽之氣體分配構件及其製造方法、噴淋頭電極、與半導體基板的處理方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8883029B2 (enExample) |
| JP (1) | JP6335538B2 (enExample) |
| KR (1) | KR20140102154A (enExample) |
| TW (1) | TWI662148B (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8883029B2 (en) * | 2013-02-13 | 2014-11-11 | Lam Research Corporation | Method of making a gas distribution member for a plasma processing chamber |
| US20140315392A1 (en) * | 2013-04-22 | 2014-10-23 | Lam Research Corporation | Cold spray barrier coated component of a plasma processing chamber and method of manufacture thereof |
| US9580360B2 (en) | 2014-04-07 | 2017-02-28 | Lam Research Corporation | Monolithic ceramic component of gas delivery system and method of making and use thereof |
| JP6375163B2 (ja) * | 2014-07-11 | 2018-08-15 | 東京エレクトロン株式会社 | プラズマ処理装置および上部電極アセンブリ |
| US9837254B2 (en) | 2014-08-12 | 2017-12-05 | Lam Research Corporation | Differentially pumped reactive gas injector |
| US9406535B2 (en) | 2014-08-29 | 2016-08-02 | Lam Research Corporation | Ion injector and lens system for ion beam milling |
| US10825652B2 (en) | 2014-08-29 | 2020-11-03 | Lam Research Corporation | Ion beam etch without need for wafer tilt or rotation |
| US9536748B2 (en) | 2014-10-21 | 2017-01-03 | Lam Research Corporation | Use of ion beam etching to generate gate-all-around structure |
| CN106783669B (zh) * | 2015-11-25 | 2019-04-12 | 无锡华瑛微电子技术有限公司 | 半导体处理装置及方法 |
| US10203604B2 (en) | 2015-11-30 | 2019-02-12 | Applied Materials, Inc. | Method and apparatus for post exposure processing of photoresist wafers |
| US9779955B2 (en) | 2016-02-25 | 2017-10-03 | Lam Research Corporation | Ion beam etching utilizing cryogenic wafer temperatures |
| US9958782B2 (en) | 2016-06-29 | 2018-05-01 | Applied Materials, Inc. | Apparatus for post exposure bake |
| KR102269479B1 (ko) * | 2016-12-08 | 2021-06-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 시간적 원자 층 증착 프로세싱 챔버 |
| CN113519071B (zh) | 2019-02-28 | 2025-04-22 | 朗姆研究公司 | 利用侧壁清洁的离子束蚀刻 |
| US11881384B2 (en) * | 2019-09-27 | 2024-01-23 | Applied Materials, Inc. | Monolithic modular microwave source with integrated process gas distribution |
| CN113025998B (zh) * | 2019-12-24 | 2023-09-01 | 广东众元半导体科技有限公司 | 一种金刚石薄膜微波等离子体化学气相沉积使用的基片台 |
| WO2021154816A1 (en) * | 2020-01-27 | 2021-08-05 | Applied Materials, Inc. | Methods and apparatus for plasma spraying silicon carbide coatings for semiconductor chamber applications |
| US11694908B2 (en) | 2020-10-22 | 2023-07-04 | Applied Materials, Inc. | Gasbox for semiconductor processing chamber |
| US11776793B2 (en) * | 2020-11-13 | 2023-10-03 | Applied Materials, Inc. | Plasma source with ceramic electrode plate |
| TW202305917A (zh) * | 2021-04-30 | 2023-02-01 | 日商東京威力科創股份有限公司 | 基板處理裝置及基板處理方法 |
| US12442080B2 (en) | 2023-11-16 | 2025-10-14 | Applied Materials, Inc. | Plasma showerhead assembly and method of reducing defects |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6444040B1 (en) * | 2000-05-05 | 2002-09-03 | Applied Materials Inc. | Gas distribution plate |
| US20040244685A1 (en) * | 1999-09-30 | 2004-12-09 | Lam Research Corporation | Pretreated gas distribution plate |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03162593A (ja) * | 1989-11-21 | 1991-07-12 | Hitachi Chem Co Ltd | プラズマエツチング用電極板及びその製造法 |
| JP3897393B2 (ja) * | 1997-04-14 | 2007-03-22 | 東芝セラミックス株式会社 | 高純度炭化珪素質半導体処理部材の製造方法 |
| JP3478703B2 (ja) * | 1997-05-15 | 2003-12-15 | 信越化学工業株式会社 | 炭化けい素電極板の製造方法 |
| JPH11104950A (ja) * | 1997-10-03 | 1999-04-20 | Shin Etsu Chem Co Ltd | 電極板及びその製造方法 |
| US6073577A (en) | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
| FR2790953B1 (fr) * | 1999-03-19 | 2002-08-09 | Oreal | Composition a phase aqueuse continue renfermant de l'acide l-2-oxothiazolidine 4-carboxylique |
| US6630756B2 (en) * | 2001-07-12 | 2003-10-07 | Generac Power Systems, Inc. | Air flow arrangement for generator enclosure |
| JP2003059903A (ja) * | 2001-08-10 | 2003-02-28 | Ibiden Co Ltd | プラズマエッチング装置のガス吹き出し板及びその製造方法 |
| EP1512164B1 (en) * | 2002-05-23 | 2016-01-06 | Lam Research Corporation | Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a mutli-part electrode |
| US7267741B2 (en) * | 2003-11-14 | 2007-09-11 | Lam Research Corporation | Silicon carbide components of semiconductor substrate processing apparatuses treated to remove free-carbon |
| US7645341B2 (en) * | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
| JP2005285846A (ja) * | 2004-03-26 | 2005-10-13 | Ibiden Co Ltd | プラズマエッチング装置のガス吹き出し板 |
| JP2005285845A (ja) * | 2004-03-26 | 2005-10-13 | Ibiden Co Ltd | プラズマエッチング装置のガス吹き出し板 |
| US8317968B2 (en) * | 2004-04-30 | 2012-11-27 | Lam Research Corporation | Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing |
| US7712434B2 (en) | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
| US7480974B2 (en) | 2005-02-15 | 2009-01-27 | Lam Research Corporation | Methods of making gas distribution members for plasma processing apparatuses |
| US8679252B2 (en) * | 2005-09-23 | 2014-03-25 | Lam Research Corporation | Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof |
| US7854820B2 (en) * | 2006-10-16 | 2010-12-21 | Lam Research Corporation | Upper electrode backing member with particle reducing features |
| US20080087641A1 (en) * | 2006-10-16 | 2008-04-17 | Lam Research Corporation | Components for a plasma processing apparatus |
| US8702866B2 (en) * | 2006-12-18 | 2014-04-22 | Lam Research Corporation | Showerhead electrode assembly with gas flow modification for extended electrode life |
| US8069817B2 (en) | 2007-03-30 | 2011-12-06 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
| KR101645043B1 (ko) * | 2007-10-31 | 2016-08-02 | 램 리써치 코포레이션 | 플라즈마 프로세싱 챔버, 플라즈마 프로세싱 콤포넌트 및 플라즈마 식각 챔버 프로세싱 콤포넌트 제조 방법 |
| JP5265700B2 (ja) * | 2007-12-19 | 2013-08-14 | ラム リサーチ コーポレーション | プラズマ処理装置用の複合シャワーヘッド電極組立体 |
| US8221582B2 (en) | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| US8161906B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
| US8449679B2 (en) * | 2008-08-15 | 2013-05-28 | Lam Research Corporation | Temperature controlled hot edge ring assembly |
| US8147648B2 (en) * | 2008-08-15 | 2012-04-03 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
| US8272346B2 (en) * | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
| US20110002103A1 (en) * | 2009-07-01 | 2011-01-06 | Wen-Yi Lee | Interlocking Structure For Memory Heat Sink |
| US8419959B2 (en) * | 2009-09-18 | 2013-04-16 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| KR200464037Y1 (ko) * | 2009-10-13 | 2012-12-07 | 램 리써치 코포레이션 | 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극 |
| US8470127B2 (en) | 2011-01-06 | 2013-06-25 | Lam Research Corporation | Cam-locked showerhead electrode and assembly |
| JP5808697B2 (ja) * | 2012-03-01 | 2015-11-10 | 株式会社日立ハイテクノロジーズ | ドライエッチング装置及びドライエッチング方法 |
| US9058960B2 (en) * | 2012-05-09 | 2015-06-16 | Lam Research Corporation | Compression member for use in showerhead electrode assembly |
| US8975817B2 (en) * | 2012-10-17 | 2015-03-10 | Lam Research Corporation | Pressure controlled heat pipe temperature control plate |
| US8883029B2 (en) * | 2013-02-13 | 2014-11-11 | Lam Research Corporation | Method of making a gas distribution member for a plasma processing chamber |
| US9580360B2 (en) * | 2014-04-07 | 2017-02-28 | Lam Research Corporation | Monolithic ceramic component of gas delivery system and method of making and use thereof |
-
2013
- 2013-02-13 US US13/766,096 patent/US8883029B2/en not_active Expired - Fee Related
-
2014
- 2014-02-13 KR KR1020140016848A patent/KR20140102154A/ko not_active Withdrawn
- 2014-02-13 JP JP2014025393A patent/JP6335538B2/ja active Active
- 2014-02-13 TW TW103104796A patent/TWI662148B/zh active
- 2014-10-09 US US14/510,681 patent/US20150024582A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040244685A1 (en) * | 1999-09-30 | 2004-12-09 | Lam Research Corporation | Pretreated gas distribution plate |
| US6444040B1 (en) * | 2000-05-05 | 2002-09-03 | Applied Materials Inc. | Gas distribution plate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014160819A (ja) | 2014-09-04 |
| US8883029B2 (en) | 2014-11-11 |
| US20150024582A1 (en) | 2015-01-22 |
| KR20140102154A (ko) | 2014-08-21 |
| TW201443273A (zh) | 2014-11-16 |
| US20140227866A1 (en) | 2014-08-14 |
| JP6335538B2 (ja) | 2018-05-30 |
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