TWI643283B - Substrate processing apparatus, substrate processing method, maintenance method of substrate processing apparatus, and recording medium - Google Patents
Substrate processing apparatus, substrate processing method, maintenance method of substrate processing apparatus, and recording medium Download PDFInfo
- Publication number
- TWI643283B TWI643283B TW105122804A TW105122804A TWI643283B TW I643283 B TWI643283 B TW I643283B TW 105122804 A TW105122804 A TW 105122804A TW 105122804 A TW105122804 A TW 105122804A TW I643283 B TWI643283 B TW I643283B
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- Prior art keywords
- substrate
- heating
- thermal catalyst
- exhaust
- processing apparatus
- Prior art date
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- 238000012545 processing Methods 0.000 title claims abstract description 200
- 239000000758 substrate Substances 0.000 title claims abstract description 184
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000012423 maintenance Methods 0.000 title claims description 43
- 238000003672 processing method Methods 0.000 title claims description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 116
- 239000003054 catalyst Substances 0.000 claims abstract description 111
- 230000005540 biological transmission Effects 0.000 claims abstract description 30
- 238000000859 sublimation Methods 0.000 claims abstract description 23
- 230000008022 sublimation Effects 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims description 31
- 238000004590 computer program Methods 0.000 claims description 8
- 230000000873 masking effect Effects 0.000 claims description 8
- 230000001965 increasing effect Effects 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 4
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- 238000007599 discharging Methods 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 2
- 230000001174 ascending effect Effects 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 32
- 239000011248 coating agent Substances 0.000 abstract description 21
- 238000000576 coating method Methods 0.000 abstract description 21
- 238000007725 thermal activation Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 91
- 238000012546 transfer Methods 0.000 description 48
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- 239000011572 manganese Substances 0.000 description 2
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- 229910006404 SnO 2 Inorganic materials 0.000 description 1
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- KVGMATYUUPJFQL-UHFFFAOYSA-N manganese(2+) oxygen(2-) Chemical compound [O--].[O--].[O--].[O--].[Mn++].[Mn++].[Mn++] KVGMATYUUPJFQL-UHFFFAOYSA-N 0.000 description 1
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- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 230000001590 oxidative effect Effects 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- OOAWCECZEHPMBX-UHFFFAOYSA-N oxygen(2-);uranium(4+) Chemical compound [O-2].[O-2].[U+4] OOAWCECZEHPMBX-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
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- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
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- 238000001556 precipitation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 1
- 229910003452 thorium oxide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- FCTBKIHDJGHPPO-UHFFFAOYSA-N uranium dioxide Inorganic materials O=[U]=O FCTBKIHDJGHPPO-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/60105—Applying energy, e.g. for the soldering or alloying process using electromagnetic radiation
- H01L2021/6012—Incoherent radiation, e.g. polychromatic heating lamp
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
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- H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
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Abstract
本發明之目的在於：在實行晶圓的加熱處理時，將因為晶圓的處理所產生的昇華物分解，以抑制昇華物附著於排氣通路。另外在利用光源部的光線對晶圓W實行加熱等的處理時，將附著於透光窗的昇華物除去。為了達成上述目的，本發明在處理容器2的內面形成熱觸媒層5，並將該熱觸媒層5加熱。藉此，從晶圓W上的塗布膜昇華並進入到處理容器2內的昇華物，在到達熱觸媒層5的附近時，會因為熱觸媒層5的熱活性化而被分解除去。另外當欲將附著於透光窗42的昇華物除去時，在將表面形成了熱觸媒層5的清潔用基板6搬入處理容器2內，並令熱觸媒層5接近透光窗42之後，將清潔用基板6加熱，藉此將附著於透光窗42的表面的昇華物9除去。The purpose of the present invention is to decompose the sublimates generated by the processing of the wafer during the heat treatment of the wafer to prevent the sublimation from adhering to the exhaust passage. In addition, when a process such as heating the wafer W is performed by using light from the light source section, the sublimated matter adhering to the light transmission window is removed. In order to achieve the above object, the present invention forms a thermal catalyst layer 5 on the inner surface of the processing container 2 and heats the thermal catalyst layer 5. Thereby, the sublimated material that has sublimated from the coating film on the wafer W and entered into the processing container 2 is decomposed and removed due to the thermal activation of the thermal catalyst layer 5 when it reaches the vicinity of the thermal catalyst layer 5. In addition, when it is desired to remove the sublimation attached to the light-transmissive window 42, the cleaning substrate 6 having the thermal catalyst layer 5 formed on the surface is moved into the processing container 2, and the thermal-catalyst layer 5 is brought close to the light-transmissive window 42 By heating the cleaning substrate 6, the sublimation 9 adhered to the surface of the light transmitting window 42 is removed.
Description
本發明係關於在具備排氣通路的處理容器內載置基板並實行基板處理的技術領域。The present invention relates to a technical field in which a substrate is placed in a processing container having an exhaust passage and substrate processing is performed.
例如在多層配線構造的半導體裝置的製造步驟中，會實行在基板（亦即半導體晶圓，以下稱為「晶圓」）上形成光阻膜或反射防止膜等的塗布膜的處理，接著為了令殘留在塗布膜中的溶劑乾燥，並促進交聯劑的交聯反應，會實行加熱處理。作為實行加熱處理的加熱處理裝置，會採用在處理容器內設置兼作晶圓載置台的加熱板的構造者。作為加熱晶圓的加熱部，取代加熱板，使用紅外線燈（LED光源）的構造者亦為人所習知。For example, in the manufacturing process of a semiconductor device with a multilayer wiring structure, a process of forming a coating film such as a photoresist film or an antireflection film on a substrate (ie, a semiconductor wafer, hereinafter referred to as a "wafer") is performed, and then The solvent remaining in the coating film is dried, and the crosslinking reaction of the crosslinking agent is promoted, and a heat treatment is performed. As a heat processing apparatus that performs heat processing, a structure in which a heating plate that doubles as a wafer mounting table in a processing container is used. As a heating part for heating a wafer, a structure using an infrared lamp (LED light source) instead of a heating plate is also known.
在該等加熱處理裝置中，由於在加熱晶圓之後塗布膜中的有機成分會昇華，故會利用空氣或惰性氣體清洗處理容器內部，並與排氣流一起將昇華物經由排氣通路排出。針對處理容器內的壁部，為了抑制處理蒙氣中的微粒的飛散，會加熱到昇華物的昇華溫度以上，以抑制昇華物的附著。然而流入排氣通路中的昇華物在排氣通路的下游側溫度會降低，故昇華物會變得容易析出，因此有必要定期進行維修。In these heat treatment apparatuses, since the organic components in the coating film are sublimated after the wafer is heated, the inside of the processing container is cleaned with air or an inert gas, and the sublimate is discharged through the exhaust passage together with the exhaust flow. In order to suppress the scattering of the particles in the processing mist, the wall portion in the processing container is heated to a temperature higher than the sublimation temperature of the sublimation substance to suppress the adhesion of the sublimation substance. However, since the temperature of the sublimated matter flowing into the exhaust passage decreases on the downstream side of the exhaust passage, the sublimate becomes easy to precipitate, and therefore it is necessary to perform maintenance regularly.
另外當將LED光源當作加熱部使用時，針對昇華物附著於將處理容器內的蒙氣與光源所在之蒙氣分隔的例如由石英板所構成的透光窗所導致的照度降低問題，則必須將裝置分解並實行清潔步驟。另外例如在形成作為蝕刻遮罩的稱為SOC（Spin On Cap，旋塗式覆蓋部）膜的碳系膜的步驟中，照射UV（紫外線）以實行膜層的平坦化處理的步驟已為人所習知，惟在該等情況下仍存在同樣的問題。In addition, when the LED light source is used as a heating part, in order to reduce the illuminance caused by the sublimation of the light-transmitting window composed of a quartz plate that separates the mask gas in the processing container from the mask gas in which the light source is located, The device must be disassembled and cleaned. In addition, for example, in the step of forming a carbon-based film called a SOC (Spin On Cap) film as an etching mask, the step of irradiating UV (ultraviolet rays) to perform a planarization process of the film layer has been human It is known that the same problem still exists in these cases.
另外專利文獻1記載了關於利用熱觸媒除去聚合物的技術內容。另外專利文獻2記載了利用熱觸媒進行塑膠複合材料的分解處理的技術內容。然而並未記載關於在基板處理裝置中將所產生之昇華物或分解殘渣除去的技術內容。 [先前技術文獻] [專利文獻]In addition, Patent Document 1 describes the technical content of removing a polymer using a thermal catalyst. In addition, Patent Document 2 describes the technical content of the decomposition treatment of a plastic composite material using a thermal catalyst. However, there is no description about the technical content of removing the generated sublimates or decomposition residues in the substrate processing apparatus. [Prior Art Literature] [Patent Literature]
[專利文獻1] 日本特開2014－94464號公報 [專利文獻2] 日本特開2014－177523號公報[Patent Document 1] Japanese Patent Application Publication No. 2014-94464 [Patent Document 2] Japanese Patent Application Publication No. 2014-177523
[發明所欲解決的問題] 本發明係在該等背景之下所思及者，其目的為提供一種可在一邊對處理容器內進行排氣一邊對基板實行處理時，將基板處理所生成之生成物分解，以抑制生成物附著於排氣通路的技術。本發明之另一目的在於提供一種在一邊對處理容器內進行排氣一邊利用光源部的光對基板實行處理時，將因為基板的處理所生成且附著於透光窗的生成物除去的技術。 [解決問題的手段][Problems to be Solved by the Invention] The present invention has been conceived in such backgrounds, and an object thereof is to provide a substrate produced by processing a substrate while exhausting the inside of a processing container while processing the substrate. A technology that decomposes products to prevent them from adhering to the exhaust passage. Another object of the present invention is to provide a technique for removing a product generated by the processing of the substrate and attached to the light-transmitting window when the substrate is processed by the light from the light source unit while the inside of the processing container is exhausted. [Means to solve the problem]
本發明之基板處理裝置的特徵為包含：處理容器，其在內部設置了載置被處理基板用的載置部；排氣通路，其用來將該處理容器內的蒙氣排出；熱觸媒物質，其形成於該處理容器的內面以及該排氣通路的至少其中一方，藉由被加熱而熱活性化，以將因為被處理基板的處理而從該被處理基板產生的生成物分解；以及熱觸媒用的加熱部，其用來將該熱觸媒物質加熱。The substrate processing apparatus of the present invention is characterized in that it includes a processing container provided with a mounting portion for mounting a substrate to be processed therein; an exhaust passage for exhausting the mist in the processing container; a thermal catalyst; A substance formed on at least one of an inner surface of the processing container and the exhaust passage, and being thermally activated by being heated to decompose a product generated from the processed substrate due to processing of the processed substrate; And a heating unit for a thermal catalyst, which heats the thermal catalyst substance.
本發明之另一基板處理裝置的特徵為包含：處理容器，其在內部設置了載置被處理基板用的載置部；基板加熱部，其將該載置部所載置之被處理基板加熱；排氣通路，其用來將該處理容器內的蒙氣排出；光源部，其對該載置部所載置之基板照射光線；透光窗，其將該光源部與處理容器內的蒙氣分隔；選擇部，其選擇維修模式；以及控制部，其輸出控制信號，以實行：將具備可藉由被加熱而熱活性化以將因為基板的處理而從基板產生之生成物（亦即昇華物）分解的熱觸媒物質的維修用基板，在選擇了該維修模式時搬入該處理容器內的步驟；接著為了令該維修用基板的該熱觸媒物質熱活性化而利用該基板加熱部進行加熱的步驟；以及為了將附著於該透光窗的該昇華物除去，而令被加熱之該維修用基板接近該透光窗的步驟。Another substrate processing apparatus of the present invention is characterized by comprising: a processing container having a mounting portion for mounting a substrate to be processed therein; and a substrate heating portion that heats the substrate to be processed placed on the mounting portion. An exhaust passage for exhausting the masking gas in the processing container; a light source section for irradiating light to the substrate placed on the mounting section; a light transmission window for coupling the light source section and the masking in the processing container; Air separation; a selection unit that selects a maintenance mode; and a control unit that outputs a control signal to implement: a product having a product that can be thermally activated by being heated to process a substrate from a substrate (ie, Sublimation) The substrate for maintenance of the thermal catalyst material decomposed is moved into the processing container when the maintenance mode is selected; then, the substrate is heated to thermally activate the thermal catalyst material of the maintenance substrate A heating step; and a step of bringing the heated substrate for maintenance close to the light transmission window in order to remove the sublimation attached to the light transmission window.
本發明之基板處理方法包含：將被處理基板載置於處理容器內的載置部並進行處理的步驟；將該處理容器內的蒙氣經由排氣通路排出的步驟；以及將設置於該處理容器的內面以及該排氣通路的至少其中一方的熱觸媒物質加熱，使其熱活性化，以將因為被處理基板的處理而從基板產生之生成物分解的步驟。The substrate processing method of the present invention includes a step of placing a substrate to be processed in a mounting portion in a processing container and performing processing; a step of discharging a masked gas in the processing container through an exhaust passage; and providing the processing in the processing device. A step of heating at least one of the inner surface of the container and the exhaust gas path to thermally activate the thermal catalyst material to decompose products generated from the substrate due to processing of the substrate to be processed.
本發明之基板處理裝置的維修方法，係維修基板處理裝置的方法，該基板處理裝置包含：處理容器，其在內部設置了載置被處理基板用的載置部；基板加熱部，其將該載置部所載置之被處理基板加熱；排氣通路，其用來將該處理容器內的蒙氣排出；光源部，其對該載置部所載置之基板照射光線；以及透光窗，其將該光源部與處理容器內的蒙氣分隔；該基板處理裝置的維修方法的特徵為包含：將具備可藉由被加熱而熱活性化以將因為基板的處理而從基板產生之生成物（亦即昇華物）分解的熱觸媒物質的維修用基板，搬入該處理容器內的步驟；接著為了令該維修用基板的該熱觸媒物質熱活性化而利用該基板加熱部進行加熱的步驟；以及為了將附著於該透光窗的該昇華物除去，而令被加熱之該維修用基板接近該透光窗的步驟。The method for repairing a substrate processing apparatus according to the present invention is a method for repairing a substrate processing apparatus. The substrate processing apparatus includes a processing container provided with a mounting portion for mounting a substrate to be processed therein, and a substrate heating portion, which The substrate to be processed placed on the mounting portion is heated; an exhaust passage for exhausting the masked gas in the processing container; a light source portion that irradiates light to the substrate placed on the mounting portion; and a light transmission window It separates the light source part from the mask in the processing container. The method for repairing the substrate processing device is characterized by including: generating heat generated by heating the substrate to be generated from the substrate by processing the substrate; A substrate for maintenance of a thermal catalyst substance that is decomposed by a substance (that is, a sublimate), and carried into the processing container; then, in order to thermally activate the thermal catalyst substance of the maintenance substrate, the substrate heating section is used for heating And a step of bringing the heated substrate for maintenance close to the light transmission window in order to remove the sublimated matter attached to the light transmission window.
本發明之記憶媒體，記憶了電腦程式，該電腦程式用於基板處理裝置，該基板處理裝置具備在內部設置了載置被處理基板用的載置部的處理容器，該記憶媒體的特徵為：該電腦程式組合步驟群以實行上述的基板處理方法。The memory medium of the present invention stores a computer program for a substrate processing apparatus. The substrate processing apparatus includes a processing container having a mounting portion for mounting a substrate to be processed therein. The characteristics of the storage medium are: The computer program combines steps to implement the substrate processing method described above.
另外本發明之記憶媒體，記憶了電腦程式，該電腦程式用於基板處理裝置，該基板處理裝置具備在內部設置了載置被處理基板用的載置部的處理容器，該記憶媒體的特徵為：該電腦程式組合步驟群以實行上述的基板處理裝置的維修方法。 [發明的功效]In addition, the storage medium of the present invention stores a computer program for a substrate processing apparatus. The substrate processing apparatus includes a processing container having a mounting portion for mounting a substrate to be processed therein. The characteristics of the storage medium are: : This computer program combines steps to implement the above-mentioned method for maintaining a substrate processing apparatus. [Effect of the invention]
若根據本發明，當在處理容器內實行基板的處理，並將處理容器內的蒙氣排出時，藉由在處理容器的內面以及該排氣通路的至少其中一方設置熱觸媒物質，並將熱觸媒物質加熱，以將在處理容器內的蒙氣中所產生的生成物分解除去。藉此便可抑制生成物附著於排氣通路，故可降低維修頻度。另外，另一本發明，在一邊對處理容器內進行排氣一邊利用光源部的光線對基板實行處理時，藉由將設置了熱觸媒物質的維修用基板加熱，並令其接近透光窗，以將附著於透光窗的昇華物除去，故無須拆解處理容器便可清潔透光窗。According to the present invention, when a substrate is processed in a processing container and the masking gas in the processing container is discharged, at least one of the inner surface of the processing container and the exhaust path is provided with a thermal catalyst substance, and The thermal catalyst substance is heated to decompose and remove the products generated in the mist in the processing container. This can prevent the product from adhering to the exhaust passage, so the maintenance frequency can be reduced. In addition, in another aspect of the present invention, when a substrate is processed by using light from a light source unit while exhausting the inside of a processing container, a maintenance substrate provided with a thermal catalyst substance is heated and brought close to a light transmission window. In order to remove the sublimation attached to the light transmission window, the light transmission window can be cleaned without disassembling the processing container.
［第1實施態樣］ 作為本發明之第1實施態樣的基板處理裝置，針對適用於加熱處理裝置的例子進行説明。首先針對組裝了本發明之加熱處理裝置的基板處理系統（亦即塗布、顯影裝置）的整體簡單敘述。塗布、顯影裝置，如圖1以及圖2所示的，構成將載置區塊B1、處理區塊B2、介面區塊B3連接成直線狀的構造。介面區塊B3，更與曝光站B4連接。[First Embodiment] As a substrate processing apparatus according to a first embodiment of the present invention, an example applied to a heat processing apparatus will be described. First, the overall description of a substrate processing system (ie, a coating and developing device) in which the heat processing device of the present invention is assembled is briefly described. As shown in FIGS. 1 and 2, the coating and developing device has a structure in which the placing block B1, the processing block B2, and the interface block B3 are connected in a straight line. The interface block B3 is further connected to the exposure station B4.
載置區塊B1，具有從收納複數枚產品用基板（例如直徑300mm的晶圓W）的搬運容器（亦即載體C，例如FOUP）將該等基板搬入裝置內或是從裝置內搬出的功能，並具備載體C的載置台101、閘門102，以及用來從載體C搬運晶圓W的搬運臂103。處理區塊B2構成用來對晶圓W實行液體處理的第1～第6單位區塊D1～D6由下往上依序堆疊的構造，各單位區塊D1～D6，大致為相同的構造。在圖1中，各單位區塊D1～D6所附之字母文字，表示處理種類別，BCT表示反射防止膜形成處理，COT表示對晶圓W供給光阻以形成光阻膜的光阻膜形成處理，DEV表示顯影處理。The mounting block B1 has a function of transferring the substrates into or out of the device from a carrying container (ie, a carrier C, such as a FOUP) that stores a plurality of product substrates (for example, a wafer W having a diameter of 300 mm). It also includes a mounting table 101, a shutter 102 for the carrier C, and a transfer arm 103 for transferring the wafer W from the carrier C. The processing block B2 has a structure in which the first to sixth unit blocks D1 to D6 for performing liquid processing on the wafer W are sequentially stacked from bottom to top, and the unit blocks D1 to D6 have substantially the same structure. In FIG. 1, the letters and letters attached to each unit block D1 to D6 indicate the type of processing, BCT indicates the anti-reflection film formation processing, and COT indicates the photoresist film formation by supplying a photoresist to the wafer W to form a photoresist film. Processing, DEV indicates development processing.
圖2代表性地顯示出單位區塊D3的構造，於單位區塊D3，設置了在從載置區塊B1側向介面區塊B3延伸的直條狀的搬運區域R3內移動的主臂A3，以及具備杯具模組111的塗布單元110。另外於棚台單元U1～U6堆疊了相當於本發明之加熱處理裝置的加熱模組以及冷卻模組1。在搬運區域R3的載置區塊B1側，設置了由互相堆疊的複數個模組所構成的棚台單元U7。搬運臂103與主臂A3之間的晶圓W的傳遞，透過棚台單元U7的傳遞模組與搬運臂104實行。FIG. 2 schematically shows the structure of the unit block D3. On the unit block D3, a main arm A3 that moves in a straight-shaped conveying area R3 extending from the placement block B1 to the interface block B3 is provided. And a coating unit 110 including a cup module 111. In addition, a heating module and a cooling module 1 corresponding to the heat treatment device of the present invention are stacked on the shed units U1 to U6. A shelving unit U7 composed of a plurality of modules stacked on each other is provided on the mounting block B1 side of the conveying area R3. The transfer of the wafer W between the transfer arm 103 and the main arm A3 is performed through the transfer module of the rack unit U7 and the transfer arm 104.
介面區塊B3，係用來在處理區塊B2與曝光站B4之間實行晶圓W的傳遞的區塊，並具備複數個處理模組互相堆疊的棚台單元U8、U9、U10。另外圖中的105、106係分別用來在棚台單元U8、U9之間以及棚台單元U9、U10之間實行晶圓W的傳遞的搬運臂，圖中的107，係用來在棚台單元U10與曝光站B4之間實行晶圓W的傳遞的搬運臂。針對在由塗布、顯影裝置以及曝光站B4所構成之系統中的晶圓W的大致搬運路徑簡單進行説明。晶圓W，依照載體C→搬運臂103→棚台單元U7的傳遞模組→搬運臂104→棚台單元U7的傳遞模組→單位區塊D1（D2）→單位區塊D3（D4）→介面區塊B3→曝光站B4→介面區塊B3→單位區塊D5（D6）→棚台單元U7的傳遞模組TRS→搬運臂103→載體C的順序移動。The interface block B3 is a block for transferring the wafer W between the processing block B2 and the exposure station B4, and is provided with a plurality of processing units U8, U9, and U10 stacked on top of each other. In addition, 105 and 106 in the figure are transfer arms for carrying wafer W between the shed units U8 and U9 and between the shed units U9 and U10, respectively. 107 in the figure are used for the shed A transfer arm that transfers the wafer W between the unit U10 and the exposure station B4. The rough conveyance path of the wafer W in a system including a coating and developing device and an exposure station B4 will be briefly described. Wafer W, according to carrier C → transfer arm 103 → transfer unit of shelf unit U7 → transfer arm 104 → transfer unit of shelf unit U7 → unit block D1 (D2) → unit block D3 (D4) → Interface block B3 → exposure station B4 → interface block B3 → unit block D5 (D6) → transfer module TRS of the shed unit U7 → transfer arm 103 → carrier C moves sequentially.
塗布、顯影裝置，如圖2所示的具備控制部100。控制部100，具有程式儲存部，於程式儲存部，儲存了組合命令以實施晶圓搬運配方、各加熱模組以及冷卻模組的清潔作業序列的程式。The coating and developing device includes a control unit 100 as shown in FIG. 2. The control section 100 has a program storage section, and the program storage section stores a program that combines commands to implement a wafer handling recipe, a cleaning operation sequence of each heating module, and a cooling module.
圖3顯示出加熱模組（亦即加熱處理裝置）的整體構造。圖3中的2為處理容器，該處理容器2，係由下構件25與蓋部22所構成，該下構件25係由頂面開口的扁平圓筒體所構成，該蓋部22相對於該下構件25上下移動以開啟或關閉處理容器2，進而構成實行基板（亦即直徑300mm的晶圓W）的加熱處理的加熱室。下構件25透過支持構件26被支持在基台27之上，該基台27相當於圖中未顯示的框體的底面部，該框體構成加熱處理裝置的外裝體。於下構件25，設置了基板加熱部（亦即構成光源部的LED陣列41），在LED陣列41的上方側，設置了用來將該LED陣列41所在之蒙氣與處理蒙氣分隔的例如由石英所構成的透光窗42。LED陣列41，遍及其整個周圍被例如對銅（Cu）板鍍金的反射板43所包圍，可將射向與照射方向（在圖3中為上方向）不同之方向的光線反射以有效率地取得輻射光。另外於透光窗42的表面，設置了用來將後述的清潔用基板保持在接近該透光窗42之狀態的突起部44。FIG. 3 shows the overall structure of a heating module (ie, a heat treatment device). 3 in FIG. 3 is a processing container. The processing container 2 is composed of a lower member 25 and a cover portion 22. The lower member 25 is formed of a flat cylindrical body with an open top surface. The lower member 25 moves up and down to open or close the processing container 2, and further constitutes a heating chamber that performs a heating process of the substrate (that is, the wafer W having a diameter of 300 mm). The lower member 25 is supported on a base 27 through a support member 26, and the base 27 corresponds to a bottom surface of a frame not shown in the figure, and the frame constitutes an exterior body of the heat treatment device. On the lower member 25, a substrate heating portion (ie, the LED array 41 constituting the light source portion) is provided. On the upper side of the LED array 41, for example, a mask for separating the LED array 41 from the processing mask is provided. A light transmission window 42 made of quartz. The LED array 41 is surrounded by, for example, a reflecting plate 43 plated with a copper (Cu) plate, and can reflect light rays directed in a direction different from the irradiation direction (upward direction in FIG. 3) to efficiently Get radiant light. In addition, a protrusion 44 is provided on the surface of the light-transmitting window 42 to hold a cleaning substrate described later in a state close to the light-transmitting window 42.
於下構件25的底部28以及透光窗42，從上方觀察在周圍方向上等間隔設置了3個將該等構件從厚度方向貫通的貫通孔29，對應各貫通孔29，設置了支持晶圓W的升降銷23。升降銷23，以利用設置在基台27上的升降機構24進行升降，而從透光窗42的表面突出或没入的方式設置，藉由使晶圓W升降，而在其與例如圖2中的搬運臂A3之間實行晶圓W的傳遞。Three through holes 29 penetrating through the thickness direction of the members from the bottom 28 and the transparent window 42 of the lower member 25 are arranged at equal intervals in the peripheral direction when viewed from above. Corresponding to each through hole 29, a supporting wafer is provided. W's lift pin 23. The lifting pin 23 is raised and lowered by the lifting mechanism 24 provided on the base 27, and is protruded or submerged from the surface of the light transmission window 42, and the wafer W is raised and lowered, for example, in FIG. 2 and FIG. The transfer of the wafer W is performed between the transfer arms A3.
蓋部22係由底面開口的扁平圓筒體所構成，並構成可在與下構件25的周圍壁部的頂面接觸（詳細而言係與後述的銷51抵接）而形成將處理容器2關閉之狀態的下降位置，與將晶圓W傳遞給升降銷23時的上升位置之間升降的構造。在該例中蓋部22的升降動作係利用設置於基台27的升降機構19驅動安裝於蓋部22的外周圍面的升降臂18來進行。The cover portion 22 is formed of a flat cylindrical body with an open bottom surface, and is configured to be in contact with the top surface of the peripheral wall portion of the lower member 25 (specifically, it is in contact with a pin 51 described later) to form the processing container 2 A structure in which the lowered position in the closed state is raised and lowered when the wafer W is transferred to the lift pin 23. In this example, the raising and lowering operation of the lid portion 22 is performed by driving the raising and lowering arm 18 attached to the outer peripheral surface of the lid portion 22 by the raising and lowering mechanism 19 provided on the base 27.
另外於下構件25的周圍壁部的頂面，沿著周圍方向隔著間隔形成了例如高度1mm的銷51。因此，當關閉蓋部22時，在蓋部22與下構件25之間會形成1mm的間隙，在將處理容器2內的氣體排出時，外部氣體（加熱處理裝置所在之無塵室的蒙氣）會從間隙流入，並在處理容器2內形成氣流。於蓋部22的頂板的中央部位，形成了排氣口32，於排氣口32，連接了由排氣導管所構成的排氣通路30的一端側的底部。排氣通路30，沿著蓋部22的頂面在半徑方向上直線狀延伸，並與工場內的排氣導管連接。In addition, on the top surface of the peripheral wall portion of the lower member 25, pins 51 having a height of, for example, 1 mm are formed at intervals in the peripheral direction. Therefore, when the lid portion 22 is closed, a gap of 1 mm is formed between the lid portion 22 and the lower member 25. When the gas in the processing container 2 is exhausted, the external air (the mask in the clean room where the heat treatment device is located) ) Will flow from the gap and form an air flow in the processing container 2. An exhaust port 32 is formed at a central portion of the top plate of the cover portion 22, and the exhaust port 32 is connected to a bottom portion on one end side of an exhaust passage 30 formed by an exhaust duct. The exhaust passage 30 extends linearly in a radial direction along the top surface of the cover portion 22 and is connected to an exhaust duct in the workshop.
另外於處理容器2的內壁面的全部，形成了熱觸媒層5，其係覆蓋熱觸媒物質（熱觸媒體）所形成，該熱觸媒物質例如係由Cr2 O3 所構成。熱觸媒層5，例如只要在基材上利用塗布、熱噴塗等已知的覆蓋方法形成熱觸媒體的被膜即可。在蓋部22的壁內，埋設了用來對處理容器2內的熱觸媒層5進行加熱的熱觸媒用的加熱部（亦即加熱器10）。加熱器10的發熱量，設定成熱觸媒層5被熱活性化而發揮熱觸媒功能（亦即將從晶圓W產生並到達該熱觸媒層5附近的昇華物熱分解的功能）的溫度，在例如Cr2 O3 的情況下，為200℃～400℃。位於蓋部22的頂面的排氣通路30被圖中未顯示的加熱器，加熱到從晶圓W產生的昇華物不會附著的溫度。In addition, a thermal catalyst layer 5 is formed on the entire inner wall surface of the processing container 2 and is formed by covering a thermal catalyst substance (thermal catalyst), which is made of, for example, Cr 2 O 3 . The thermal catalyst layer 5 may be formed on the base material by a known covering method such as coating or thermal spraying. In the wall of the lid portion 22, a heating portion (ie, a heater 10) for a thermal catalyst for heating the thermal catalyst layer 5 in the processing container 2 is buried. The amount of heat generated by the heater 10 is set such that the thermal catalyst layer 5 is thermally activated to perform a thermal catalyst function (that is, a function of thermally decomposing a sublimated substance generated from the wafer W and reaching the vicinity of the thermal catalyst layer 5). The temperature is, for example, 200 ° C to 400 ° C in the case of Cr 2 O 3 . The exhaust passage 30 located on the top surface of the cover portion 22 is heated to a temperature at which sublimates generated from the wafer W do not adhere by a heater (not shown).
於圖3揭示了控制加熱處理裝置的控制部，該控制部由於可謂係圖2所示之控制部的一部分，故附上相同的符號100。圖3所示之控制部100，與選擇維修模式的選擇部99連接，當選擇了維修模式時，用來實行加熱處理裝置的維修的程式便啟動。該選擇部99例如設置於操作者所操作的操作面板。控制部100，例如根據事前輸入控制部100的運轉程式，控制升降機構24所致之升降銷23的升降動作、LED模組4的照射強度調整或導通切斷動作。A control unit for controlling the heat treatment device is disclosed in FIG. 3. Since the control unit is a part of the control unit shown in FIG. 2, the same reference numeral 100 is attached. The control unit 100 shown in FIG. 3 is connected to a selection unit 99 that selects a maintenance mode. When the maintenance mode is selected, a program for performing maintenance of the heat treatment device is started. The selection unit 99 is provided, for example, on an operation panel operated by an operator. The control unit 100 controls the lifting operation of the lifting pin 23 caused by the lifting mechanism 24, the irradiation intensity adjustment of the LED module 4, or the ON / OFF operation based on the operation program of the control unit 100 input in advance.
接著針對本發明的實施態樣的基板處理裝置（亦即加熱處理裝置）的作用進行説明。首先利用外部的搬運臂（例如圖2所示的主臂A3）將晶圓W搬入處理容器2內。在該時點，LED模組4處於切斷狀態。當主臂A3所保持之晶圓W到達透光窗42的上方時，利用升降機構24令升降銷23上升，將主臂A3上的晶圓W頂起，從主臂A3接收晶圓W，傳遞了晶圓W的主臂A3便退出到處理容器2之外。Next, the function of the substrate processing apparatus (that is, the heat processing apparatus) according to the embodiment of the present invention will be described. First, the wafer W is transferred into the processing container 2 by an external transfer arm (for example, the main arm A3 shown in FIG. 2). At this point, the LED module 4 is in a cut-off state. When the wafer W held by the main arm A3 reaches above the light transmission window 42, the lifting pin 23 is raised by the lifting mechanism 24, the wafer W on the main arm A3 is lifted up, and the wafer W is received from the main arm A3. The main arm A3 that has transferred the wafer W is ejected out of the processing container 2.
然後令蓋部22下降，如圖3所示的，使蓋部22處於閉合狀態以形成處理蒙氣，同時令升降銷23下降，使晶圓W位於既定的高度，例如，位於透光窗42的表面與晶圓W的底面之間的間隙的高度為3mm的高度。接著從LED模組4向晶圓W照射晶圓W的吸收波長帶域的輻射光（亦即紅外線），將晶圓W加熱到既定的加熱處理溫度200℃～400℃（例如300℃）。因此在本實施態樣中，升降銷23相當於載置部。另外例如在令蓋部22下降之後才透過排氣通路30開始對處理容器2內進行排氣。如上所述的在將蓋部22閉合的狀態下，因為銷51的存在，蓋部22與下構件25之間形成了間隙。因此，當處理容器2內形成負壓時周圍的蒙氣（空氣）會從該間隙流入，如圖4所示的在處理容器2內，會形成從外周圍流向中央上部的氣流。Then, the cover portion 22 is lowered. As shown in FIG. 3, the cover portion 22 is closed to form a processing mask, and the lifting pin 23 is lowered to place the wafer W at a predetermined height, for example, at the light transmission window 42. The height of the gap between the surface and the bottom surface of the wafer W is a height of 3 mm. Then, the wafer W is irradiated with the radiated light (ie, infrared rays) in the absorption wavelength band of the wafer W from the LED module 4 to heat the wafer W to a predetermined heat treatment temperature of 200 ° C. to 400 ° C. (for example, 300 ° C.). Therefore, in this embodiment, the lift pin 23 corresponds to a mounting portion. In addition, for example, the inside of the processing container 2 is exhausted through the exhaust passage 30 only after the lid portion 22 is lowered. As described above, in the state where the lid portion 22 is closed, a gap is formed between the lid portion 22 and the lower member 25 due to the presence of the pin 51. Therefore, when a negative pressure is formed in the processing container 2, the surrounding air (air) flows into the gap. As shown in FIG. 4, in the processing container 2, an air flow is formed from the outer periphery to the upper center.
此時從晶圓W的塗布膜，例如塗布液中所含之有機成分，會昇華而成為昇華物，生成物（亦即昇華物）乘著處理容器2內所形成之氣流，流向處理容器2的中央上部的排氣口32，從排氣口32流入排氣通路30。另一方面，形成於包含處理容器2的頂板面在內的內壁面的熱觸媒層5會因為加熱器10而熱活性化，故接近處理容器2的內壁面的昇華物，會因為熱觸媒層5的熱觸媒作用而被分解。At this time, from the coating film of the wafer W, for example, the organic components contained in the coating solution, sublimate to become a sublimate, and the product (that is, the sublimate) multiplies the airflow formed in the processing container 2 and flows to the processing container 2 The exhaust port 32 at the upper part of the center flows into the exhaust passage 30 from the exhaust port 32. On the other hand, the thermal catalyst layer 5 formed on the inner wall surface including the top plate surface of the processing container 2 is thermally activated by the heater 10, so the sublimated matter close to the inner wall surface of the processing container 2 may be thermally contacted. The thermal catalyst of the medium layer 5 is decomposed.
在此針對熱觸媒層5所致之晶圓W處理時所產生的生成物（在此為從塗布膜昇華的昇華物）的分解進行説明。熱觸媒層5，例如在將Cr2 O3 加熱時會激發電子，而具有很強的氧化力。當有機成分（亦即昇華物）接近該熱觸媒層5時，有機成分會被氧化，而在昇華物內產生自由基。之後，所生成之自由基，在200～400℃之下，會在昇華物內傳播。然後昇華物會因為自由基而裂開，並小分子化，而成為小分子的昇華物，會與處理容器2內的蒙氣中所含有的氧結合，而成為二氧化碳與水。因此，從排氣口32排氣的處理容器2內的蒙氣，在利用熱觸媒層5的觸媒作用將昇華物分解之後便被排出。Here, the decomposition of a product (here, a sublimation product sublimated from a coating film) generated during the processing of the wafer W by the thermal catalyst layer 5 will be described. The thermal catalyst layer 5, for example, excites electrons when heating Cr 2 O 3 and has a strong oxidizing power. When the organic component (that is, the sublimate) approaches the thermal catalyst layer 5, the organic component is oxidized, and free radicals are generated in the sublimate. After that, the generated free radicals will propagate inside the sublimate at 200-400 ° C. Then, the sublimate will be cleaved due to free radicals and become small molecules, and become a small molecule sublimate, which will combine with oxygen contained in the Mongolian gas in the processing container 2 to become carbon dioxide and water. Therefore, the masked gas in the processing container 2 exhausted from the exhaust port 32 is discharged after the sublimate is decomposed by the catalytic action of the thermal catalyst layer 5.
在加熱處理結束之後，升降銷23上升並將晶圓W頂起，升降銷23就這樣上升到與搬運臂A3進行傳遞的高度位置。然後令搬運臂A3進入到處理容器2內的晶圓W的傳遞位置，之後，令升降銷23下降以將晶圓W傳遞給搬運臂A3。接收到晶圓W的搬運臂A3，在保持著晶圓W的狀態下後退，將晶圓W搬出到處理容器2之外。After the heat treatment is completed, the lift pin 23 is lifted and the wafer W is lifted, and the lift pin 23 is thus raised to the height position where the lift pin 23 is transferred to the transfer arm A3. Then, the transfer arm A3 is brought into the transfer position of the wafer W in the processing container 2, and thereafter, the lift pin 23 is lowered to transfer the wafer W to the transfer arm A3. The transfer arm A3 that has received the wafer W moves backward while holding the wafer W, and carries the wafer W out of the processing container 2.
像這樣從晶圓W昇華的昇華物，在被處理容器2內所覆蓋之熱觸媒層5分解之後會被排出，惟一部分的昇華物，會侵入到晶圓W與透光窗42之間的間隙，附著於透光窗42的表面。因此如圖5所示的昇華物9會在透光窗42的表面析出，從LED模組4所照射之光線的透光率會變差。因此晶圓W會發生溫度不一致的情況，無法良好地受到加熱，另外昇華物9可能會成為微粒的發生源。The sublimated material sublimated from the wafer W in this way is discharged after being decomposed by the thermal catalyst layer 5 covered in the processing container 2, but a part of the sublimated material penetrates between the wafer W and the light transmission window 42. The gap is attached to the surface of the light transmitting window 42. Therefore, the sublimation object 9 shown in FIG. 5 will precipitate on the surface of the light transmission window 42, and the light transmittance of the light irradiated from the LED module 4 will be deteriorated. Therefore, the temperature of the wafer W may be inconsistent, and the wafer W may not be heated well. In addition, the sublimate 9 may be a source of particles.
因此在例如加熱處理裝置所預先設定之枚數的晶圓W的處理結束之後，會實行將透光窗42的表面所析出之昇華物9除去的清潔作業。在該清潔作業中，會使用例如將直徑300mm的晶圓W的背面以熱觸媒層5覆蓋的清潔用基板。茲針對使用清潔用基板除去昇華物的情況進行説明，首先操作者利用模式選擇部99選擇維修模式。根據該選擇，利用搬運臂103從載置於例如圖1、圖2所示之塗布、顯影裝置的載置區塊B1的載體C將清潔用基板取出。清潔用基板透過搬運臂104、棚台單元U7傳遞給主臂A3，然後利用該主臂A3搬入處理容器2內並傳遞給升降銷23。Therefore, for example, after the processing of a predetermined number of wafers W by the heat treatment apparatus is completed, a cleaning operation to remove the sublimated matter 9 deposited on the surface of the light transmitting window 42 is performed. In this cleaning operation, for example, a cleaning substrate is used in which the back surface of the wafer W having a diameter of 300 mm is covered with the thermal catalyst layer 5. A description will be given of a case where the sublimated matter is removed using the cleaning substrate. First, the operator selects a maintenance mode using the mode selection unit 99. According to this selection, the cleaning substrate is taken out from the carrier C placed on the mounting block B1 of the coating and developing apparatus shown in, for example, FIGS. 1 and 2 by the transfer arm 103. The cleaning substrate is transmitted to the main arm A3 through the conveying arm 104 and the shelf unit U7, and is then carried into the processing container 2 by the main arm A3 and transmitted to the lift pin 23.
之後，如圖6所示的令升降銷23下降，將清潔用基板6傳遞給（載置於）各突起部44。然後，開始從排氣通路30排氣，同時令LED模組4導通，將清潔用基板6加熱到例如300℃。因此可以說，LED模組4係兼作熱觸媒用的加熱部以及基板加熱部。然後清潔用基板6的底面側的熱觸媒層5被活性化，由於透光窗42與清潔用基板6的距離接近到3mm左右，故附著於透光窗42的昇華物9會因為熱觸媒作用而被分解除去。昇華物9的分解成分與處理容器2內的蒙氣一併從排氣通路30排出。另外清潔用基板6亦可載置於塗布、顯影裝置內的保管部。保管部亦可利用例如棚台單元U7的一部分。Thereafter, as shown in FIG. 6, the lift pins 23 are lowered, and the cleaning substrate 6 is transferred (placed) to each of the protrusions 44. Then, the exhaust is started from the exhaust passage 30 while the LED module 4 is turned on, and the cleaning substrate 6 is heated to, for example, 300 ° C. Therefore, it can be said that the LED module 4 doubles as a heating portion for a thermal catalyst and a substrate heating portion. Then, the thermal catalyst layer 5 on the bottom surface side of the cleaning substrate 6 is activated. Since the distance between the light transmitting window 42 and the cleaning substrate 6 is approximately 3 mm, the sublimation 9 attached to the light transmitting window 42 may be exposed to heat. The medium is decomposed and removed. The decomposed components of the sublimate 9 are discharged from the exhaust passage 30 together with the masking gas in the processing container 2. The cleaning substrate 6 may be placed in a storage unit in a coating and developing device. The storage unit may use, for example, a part of the shelving unit U7.
在第1實施態樣中，當欲在處理容器2內實行晶圓W的加熱處理時，會於處理容器2的內面形成熱觸媒層5，並將該熱觸媒層5加熱。因此當從晶圓W上的塗布膜昇華並進入到處理容器2內的昇華物到達熱觸媒層5的附近時，會因為熱觸媒層5的熱活性化而被分解除去。其結果，由於流到排氣通路30的下游側的昇華物的量會變少，故排氣通路30的昇華物的附著量也會變少，可降低維修頻度，同時可抑制昇華物在處理容器2的內面析出，因此可減少微粒污染，亦可抑制處理容器2內的清潔頻度。In the first embodiment, when the wafer W is to be heated in the processing container 2, a thermal catalyst layer 5 is formed on the inner surface of the processing container 2 and the thermal catalyst layer 5 is heated. Therefore, when the sublimated material from the coating film on the wafer W and entered into the processing container 2 reaches the vicinity of the thermal catalyst layer 5, it is decomposed and removed due to the thermal activation of the thermal catalyst layer 5. As a result, since the amount of sublimates flowing to the downstream side of the exhaust passage 30 is reduced, the amount of sublimates attached to the exhaust passage 30 is also reduced, the frequency of maintenance can be reduced, and the sublimates can be prevented from being processed Since the inner surface of the container 2 is precipitated, particulate pollution can be reduced, and the frequency of cleaning in the processing container 2 can be suppressed.
另外藉由將表面形成熱觸媒層5的清潔用基板6搬入處理容器2內，並將清潔用基板6加熱，以將附著於透光窗42的表面的昇華物9除去。藉此，便可降低拆解處理容器2並實行內部清潔的維修頻度。In addition, the cleaning substrate 6 on which the thermal catalyst layer 5 is formed on the surface is carried into the processing container 2, and the cleaning substrate 6 is heated to remove the sublimation 9 attached to the surface of the light transmitting window 42. Thereby, the maintenance frequency of disassembling the processing container 2 and performing internal cleaning can be reduced.
［第2實施態樣］ 圖7以及圖8顯示出第2實施態樣的基板處理裝置。該基板處理裝置係在圖3所示之加熱處理裝置中，將排氣通路30的位於處理容器2的上方側的部位，以形成相較於比該部位更下游側之部位的壓力損失更大的壓力損失的方式，構成例如迷路構造。於構成迷路構造的部位，形成了熱觸媒層5。在該例中所謂的下游側的部位，係相當於構成比位於處理容器2的上方側的部位更下游側的排氣通路的排氣管34。構成迷路構造的部位，相當於壓力損失區域（壓力損失部），為了方便說明，將其說明為排氣通路300。[Second Embodiment] FIGS. 7 and 8 show a substrate processing apparatus according to a second embodiment. This substrate processing apparatus is a heating processing apparatus shown in FIG. 3, and a part of the exhaust passage 30 located on the upper side of the processing container 2 is formed to have a larger pressure loss than a part further downstream than the part. The way the pressure is lost constitutes, for example, a stray structure. A thermal catalyst layer 5 is formed at a portion constituting the stray structure. The so-called downstream portion in this example corresponds to an exhaust pipe 34 constituting an exhaust passage further downstream than the portion located on the upper side of the processing container 2. The part constituting the stray structure corresponds to a pressure loss region (pressure loss portion), and for convenience of explanation, it will be described as the exhaust passage 300.
排氣通路300，具備：下側排氣通路31，其一端側與排氣口32連接，在處理容器2的圖中，向右側周緣延伸；以及上側排氣通路33，其設置在下側排氣通路31的上方，同時其底面透過連通口31a與該下側排氣通路31的另一端側連通。上側排氣通路33，向處理容器的左側周緣左右彎曲迂迴複數次，與排氣管34連接，該排氣管34與所謂的工場排氣管（設置在工場內的排氣導管）連接。然後於該下側排氣通路31以及上側排氣通路33的各自的內面形成了熱觸媒層5。更構成在上側排氣通路33與處理容器2之間設置導熱板36，以傳導設置於處理容器2的加熱器10的熱，而將熱觸媒層5加熱到例如300℃的構造。另外，亦可設置專門用來將排氣通路300加熱的加熱器。The exhaust passage 300 includes a lower exhaust passage 31 connected to the exhaust port 32 at one end side and extending to the right peripheral edge in the drawing of the processing container 2, and an upper exhaust passage 33 provided at the lower exhaust Above the passage 31, at the same time, the bottom surface thereof communicates with the other end side of the lower exhaust passage 31 through the communication port 31a. The upper exhaust passage 33 is bent back and forth several times to the left and right peripheral edges of the processing container, and is connected to an exhaust pipe 34 connected to a so-called factory exhaust pipe (exhaust duct provided in the workshop). Then, a thermal catalyst layer 5 is formed on each inner surface of the lower exhaust passage 31 and the upper exhaust passage 33. A structure is also provided in which a heat transfer plate 36 is provided between the upper exhaust passage 33 and the processing container 2 to conduct heat from the heater 10 provided in the processing container 2 and heat the thermal catalyst layer 5 to, for example, 300 ° C. In addition, a heater dedicated to heating the exhaust passage 300 may be provided.
在第2實施態樣中，當處理容器2內的蒙氣經由排氣口32流入排氣通路300時，在該排氣通路300內流動的期間昇華物會因為熱觸媒層5而被分解排出。另外由於排氣通路300的流路彎曲迂迴，比起以通常的布局形成排氣通路的排氣管（亦即下游側的排氣管34）而言壓力損失更大，故處理容器2內的蒙氣的排氣流與排氣通路300的內壁衝突的程度較大。因此排氣流所含之昇華物與熱觸媒層5接觸或是位於熱觸媒層5附近的時間變長，故可將昇華物更確實地除去，其結果，便可減少排氣管34中的昇華物的附著量，進而降低維修頻度。In the second embodiment, when the masked gas in the processing container 2 flows into the exhaust path 300 through the exhaust port 32, the sublimated matter is decomposed by the thermal catalyst layer 5 while flowing in the exhaust path 300. discharge. In addition, because the flow path of the exhaust passage 300 is curved and detoured, the pressure loss is larger than that of the exhaust pipe (that is, the exhaust pipe 34 on the downstream side) that forms the exhaust passage in a normal layout. The degree of the masked exhaust gas collision with the inner wall of the exhaust passage 300 is large. Therefore, the time during which the sublimate contained in the exhaust gas comes into contact with the thermal catalyst layer 5 or is located near the thermal catalyst layer 5 becomes longer, so the sublimate can be removed more reliably, and as a result, the exhaust pipe 34 can be reduced. The amount of sublimation in the surface, thereby reducing the frequency of maintenance.
圖9顯示出壓力損失部（亦即排氣通路）的形狀、構造的另一例。圖9所示之壓力損失部（亦即排氣通路301），其一端側的底面與處理容器2的排氣口32連接，另一端側直線狀延伸。然後在排氣通路301的長度方向上觀察，從右側的壁部向左側的壁部延伸同時從頂板面向底面延伸的捕捉板部302，以及從左側的壁部向右側的壁部延伸同時從底面向頂板面延伸的捕捉板部302，在排氣通路301的長度方向上交替並排，設置了複數片。於排氣通路301的內面以及捕捉板部302的表面形成了熱觸媒層5。FIG. 9 shows another example of the shape and structure of the pressure loss portion (that is, the exhaust passage). The pressure loss portion (that is, the exhaust passage 301) shown in FIG. 9 has a bottom surface on one end side connected to the exhaust port 32 of the processing container 2 and the other end side extends linearly. Then viewed in the length direction of the exhaust passage 301, the capture plate portion 302 extending from the right wall portion to the left wall portion while extending from the top plate to the bottom surface, and extending from the left wall portion to the right wall portion and from the bottom The capture plate portions 302 extending toward the top plate surface are alternately arranged side by side in the length direction of the exhaust passage 301, and a plurality of capture plates are provided. A thermal catalyst layer 5 is formed on the inner surface of the exhaust passage 301 and the surface of the capture plate portion 302.
再者，壓力損失部（亦即排氣通路），亦可如圖10所示的，為構成「一端側的底面與排氣口32連接，向外側螺旋狀環繞，並在外緣部與排氣管34連接」的構造的排氣通路303。此時，亦可例如像圖10所示的那樣構成在排氣流的流動方向上從左右的側壁令捕捉板部304交替突出的構造。像這樣在處理容器2的直接下游側設置壓力損失較大的排氣通路並於該排氣通路形成熱觸媒層5係較佳的態樣，惟亦可如圖3所示的沿著通常的排氣通路30的布局於排氣通路30設置熱觸媒層5，即使在此等情況下，仍具有可抑制昇華物附著於下游側的排氣通路的效果。另外即使構成「並未於處理容器2的內壁設置熱觸媒層5，而係於排氣通路設置熱觸媒層5」的構造，亦具有可抑制昇華物附著於下游側的排氣通路的效果。在以上所述的實施態樣中，係使用LED陣列41作為將晶圓W加熱的基板加熱部，惟亦可使用成為載置晶圓W的載置板並利用加熱器進行加熱的加熱板。In addition, as shown in FIG. 10, the pressure loss portion (that is, the exhaust passage) may be connected to the exhaust port 32 on the bottom surface at one end side, spirally spiral outward, and be connected with the exhaust gas at the outer edge portion. The pipe 34 is connected to the exhaust passage 303 of the structure. At this time, for example, as shown in FIG. 10, a structure in which the capture plate portions 304 alternately protrude from the left and right side walls in the flow direction of the exhaust gas flow may be configured. It is preferable that an exhaust passage having a large pressure loss be provided on the downstream side of the processing vessel 2 and a thermal catalyst layer 5 be formed in the exhaust passage. The layout of the exhaust passage 30 is provided with the thermal catalyst layer 5 in the exhaust passage 30. Even in these cases, it has the effect of suppressing the sublimation from adhering to the exhaust passage on the downstream side. In addition, even if the structure "the thermal catalyst layer 5 is not provided on the inner wall of the processing container 2 and the thermal catalyst layer 5 is provided in the exhaust passage" is provided, the exhaust passage can prevent the sublimation from adhering to the downstream side. Effect. In the embodiment described above, the LED array 41 is used as the substrate heating portion for heating the wafer W, but a heating plate that is a mounting plate on which the wafer W is placed and heated by a heater may be used.
［第3實施態樣］ 茲説明適用於對晶圓W的表面照射UV（紫外線）以進行UV處理的裝置（例如使形成於晶圓W的塗布膜的表面平坦化的UV處理裝置）的例子，作為本發明之第3實施態樣的基板處理裝置。作為塗布膜，例如可列舉出形成在晶圓W的圖案上的SOC膜。作為SOC膜的原料，可使用將含有與在含氧蒙氣下照射紫外線所產生之活性氧或臭氧發生反應而分解的碳化合物的有機膜原料{例如具有聚乙烯構造[（－CH2 －）n ]的骨架的聚合物原料}溶解於溶媒的液體。UV處理裝置，如圖11所示的具備扁平且前後方向細長的長方體形狀的框體70，於框體70的前方側的側壁面設置了晶圓W搬入或搬出用的搬入搬出口71，以及開啟或關閉該搬入搬出口71的擋門72。[Third Embodiment] An example of a device (for example, a UV processing device for flattening the surface of a coating film formed on the wafer W) for applying UV (ultraviolet) to the surface of the wafer W will be described. As a substrate processing apparatus according to a third embodiment of the present invention. Examples of the coating film include an SOC film formed on a pattern of the wafer W. As a raw material of the SOC film, an organic film raw material containing a carbon compound that is decomposed by reacting with active oxygen or ozone generated by irradiation with ultraviolet rays under an oxygen-containing mask {for example, having a polyethylene structure [(-CH 2- ) n ] skeleton polymer raw material} liquid dissolved in a solvent. As shown in FIG. 11, the UV processing apparatus includes a flat, rectangular parallelepiped frame 70, and a side wall surface on the front side of the frame 70 is provided with a loading / unloading port 71 for loading or unloading a wafer W, and The shutter 72 of the loading / unloading port 71 is opened or closed.
框體70的內部，在從搬入搬出口71觀察位於跟前側的分隔板73的上方側的空間內，設置了搬運晶圓W的搬運臂74。於搬運臂74，設置了使其在跟前側的位置與內裡側的位置之間朝前後方向移動的圖中未顯示的移動機構；搬運臂74，在跟前側的位置，在其與圖中未顯示的外部的搬運臂之間實行晶圓W的傳遞，在內裡側的位置，在其與後述的載置台81之間實行晶圓W的傳遞。搬運臂74，亦具有作為冷卻經過處理後之晶圓W的冷卻臂的功能。Inside the housing 70, a transfer arm 74 for transferring the wafer W is provided in a space above the partition plate 73 located on the front side as viewed from the loading / unloading port 71. A moving mechanism (not shown) is provided on the conveying arm 74 to move it forward and backward between the position on the front side and the position on the inner side. The position of the conveying arm 74 on the front side is not shown in the figure. The transfer of the wafer W is performed between the outer transfer arms shown, and the transfer of the wafer W is performed between the inner transfer position and the mounting table 81 described later. The transfer arm 74 also functions as a cooling arm for cooling the processed wafer W.
在與外部的搬運臂之間傳遞晶圓W的跟前側的位置，設置了在實行外部的搬運臂與搬運臂74之間的晶圓W的傳遞時，暫時支持該晶圓W的升降銷75。升降銷75，與配置在分隔板73的下方側的空間內的升降機構76連接，而可在比搬運臂74的晶圓W的載置面更下方側的位置以及比該載置面更上方側且與外部的搬運臂之間實行晶圓W的傳遞的位置之間升降。在搬運臂74與外部的搬運臂之間實行晶圓W的傳遞的位置的後方側配置了晶圓W的載置台81。在載置台81的內部，埋入了加熱器82，故亦具有作為將晶圓W加熱的加熱部的功能。A lifting pin 75 for temporarily supporting the wafer W when transferring the wafer W between the external transfer arm and the transfer arm 74 is provided at a position on the front side of the transfer wafer W with the external transfer arm. . The elevating pin 75 is connected to the elevating mechanism 76 disposed in the space below the partition plate 73, and can be positioned at a position lower than the mounting surface of the wafer W of the transfer arm 74 and more than the mounting surface. The wafer W is moved up and down from a position where the transfer of the wafer W is performed between the upper side and the external transfer arm. A mounting table 81 for the wafer W is arranged on the rear side of the position where the transfer of the wafer W is performed between the transfer arm 74 and an external transfer arm. Since the heater 82 is embedded in the mounting table 81, it also functions as a heating section for heating the wafer W.
在載置台81的下方側，設置了在實行與搬運臂74之間的晶圓W的傳遞時，暫時支持該晶圓W的升降銷83。如圖11所示的，於載置台81，設置了升降銷83可貫通的貫通孔84。升降銷83，與升降機構85連接，藉由在移動到載置台81的上方側的搬運臂74的晶圓W的載置面的下方側位置與該載置面的上方側位置之間升降，以在其與搬運臂74之間實行晶圓W的傳遞，並將晶圓W載置於載置台81。另外升降銷83，構成可在支持第1實施態樣所説明之清潔用基板6時，上升到清潔用基板6的頂面與頂板面（詳細而言係後述的UV透光部93的底面）之間的高度尺寸在數mm～十數mm的範圍內（例如3mm）的高度的構造。On the lower side of the mounting table 81, when a wafer W is transferred to and from the transfer arm 74, an elevating pin 83 that temporarily supports the wafer W is provided. As shown in FIG. 11, a through-hole 84 through which the lifting pin 83 can pass is provided on the mounting table 81. The elevating pin 83 is connected to the elevating mechanism 85 and moves up and down between a position on the lower side of the mounting surface of the wafer W of the transfer arm 74 moved to the upper side of the mounting table 81 and a position on the upper side of the mounting surface. The wafer W is transferred between it and the transfer arm 74, and the wafer W is placed on the mounting table 81. In addition, the lifting pin 83 is configured to be capable of rising to the top surface and the top surface of the cleaning substrate 6 when supporting the cleaning substrate 6 described in the first embodiment (in detail, the bottom surface of the UV light-transmitting portion 93 described later). The height dimension is a structure having a height within a range of several mm to several ten mm (for example, 3 mm).
在載置台81的上方側，設置了收納UV燈92的燈室91，該UV燈92係作為用來對載置台81所載置之晶圓W照射UV光的光源部。燈室91的底面，設置了令UV燈92所照射之UV光穿透並射向晶圓W的透光窗（亦即UV透光部93）。UV透光部93，例如由UV光可穿透的石英板等所構成。另外用來對框體70內供給清淨空氣的氣體供給部94與用來將框體70內的蒙氣排出的排氣口95，以互相對向的方式設置於燈室91的下方的側壁。排氣口95，透過排氣管96與排氣機構97連接。另外於UV處理裝置，亦與加熱處理裝置同樣，連接了控制部100。On the upper side of the mounting table 81, a lamp chamber 91 that houses a UV lamp 92 is provided as a light source section for irradiating UV light to the wafer W mounted on the mounting table 81. The bottom surface of the lamp room 91 is provided with a light transmission window (that is, the UV light transmission portion 93) that allows the UV light irradiated by the UV lamp 92 to pass through and to the wafer W. The UV light-transmitting portion 93 is formed of, for example, a quartz plate through which UV light can pass. In addition, a gas supply portion 94 for supplying clean air into the frame body 70 and an exhaust port 95 for discharging the masked air in the frame body 70 are provided on the lower side wall of the lamp chamber 91 so as to face each other. The exhaust port 95 is connected to the exhaust mechanism 97 through an exhaust pipe 96. The UV processing device is also connected to the control unit 100 in the same manner as the heat processing device.
在該UV處理裝置中，表面塗布了SOC膜的晶圓W藉由外部的基板搬運機構與升降銷75的協同運作傳遞給搬運臂74。接著令搬運臂74移動到載置台81的上方側並停止，之後令升降銷83上升，將晶圓W從搬運臂74傳遞給升降銷83。之後令升降銷83下降，將晶圓W載置於載置台81。然後從氣體供給部94供給氣體，同時開始從排氣口95排氣。In this UV processing apparatus, the wafer W coated with the SOC film is transferred to the transfer arm 74 by a cooperative operation of an external substrate transfer mechanism and the lift pins 75. Next, the transfer arm 74 is moved to the upper side of the mounting table 81 and stopped. Thereafter, the lift pin 83 is raised, and the wafer W is transferred from the transfer arm 74 to the lift pin 83. Thereafter, the lift pin 83 is lowered, and the wafer W is placed on the mounting table 81. Then, the gas is supplied from the gas supply unit 94, and at the same time, exhaust is started from the exhaust port 95.
之後將晶圓W加熱到例如250℃，點亮UV燈92，照射UV光。藉由所照射之UV光，從晶圓W的上方的清淨空氣（含氧蒙氣）中的氧產生活性氧或臭氧。藉由該等活性氧與臭氧，SOC膜的表面（SOC膜的一部分）被分解除去，實行所謂的回蝕。Thereafter, the wafer W is heated to, for example, 250 ° C., the UV lamp 92 is turned on, and UV light is irradiated. By the irradiated UV light, active oxygen or ozone is generated from oxygen in the clean air (oxygen-containing gas) above the wafer W. With such active oxygen and ozone, the surface of the SOC film (a part of the SOC film) is decomposed and removed, and so-called etch-back is performed.
該等對晶圓W照射UV以實行SOC膜的平坦化的步驟，在如圖12所示的對晶圓W進行加熱處理時，從晶圓W昇華的昇華物有時會附著於UV透光部93的底面，若昇華物9附著於UV透光部93則透光率會下降，便無法實行良好的UV處理。因此，在實行過例如預先設定之枚數的晶圓W的處理之後，會使用遍及表面以及背面之中的至少表面的全部形成了熱觸媒層5的清潔用基板6將昇華物9除去。In the steps of irradiating the wafer W with UV to flatten the SOC film, when the wafer W is heat-treated as shown in FIG. 12, the sublimated material sublimated from the wafer W may adhere to the UV light transmission. If the sublimation 9 adheres to the UV light-transmitting portion 93 on the bottom surface of the portion 93, the light transmittance decreases, and good UV treatment cannot be performed. Therefore, after the processing of, for example, a predetermined number of wafers W is performed, the sublimate 9 is removed using the cleaning substrate 6 having the thermal catalyst layer 5 formed on at least the entire surface and at least the front surface.
例如利用與晶圓W同樣的步驟，如圖13所示的將清潔用基板6載置於載置台81。之後，利用載置台81將清潔用基板6（熱觸媒層5）加熱到200～400℃（例如300℃）。接著如圖14所示的令升降銷83上升，使清潔用基板6上升到其與UV透光部93之間的高度尺寸在數mm～十數mm的範圍內（例如3mm）的高度。此時持續以載置台81進行加熱，將清潔用基板6的溫度維持在300℃。另外利用氣體供給部94供給清淨空氣，同時開始從排氣口95排氣。其結果，藉由熱觸媒層5的作用，附著於UV透光部93的底面的昇華物9被分解，被分解之昇華物9與蒙氣一起從排氣口95排出。For example, using the same procedure as the wafer W, the cleaning substrate 6 is placed on the mounting table 81 as shown in FIG. 13. Thereafter, the cleaning substrate 6 (the thermal catalyst layer 5) is heated to 200 to 400 ° C. (for example, 300 ° C.) using the mounting table 81. Next, as shown in FIG. 14, the lifting pin 83 is raised, and the cleaning substrate 6 is raised to a height in a range of several mm to ten mm (for example, 3 mm) between the height dimension of the cleaning substrate 6 and the UV light transmitting portion 93. At this time, heating with the mounting table 81 was continued, and the temperature of the cleaning substrate 6 was maintained at 300 ° C. In addition, the clean air is supplied by the gas supply unit 94, and exhaust is started from the exhaust port 95 at the same time. As a result, the sublimate 9 attached to the bottom surface of the UV translucent portion 93 is decomposed by the action of the thermal catalyst layer 5, and the decomposed sublimate 9 is discharged from the exhaust port 95 together with the mask.
若根據第3實施態樣，則係藉由將清潔用基板6加熱，以將附著於UV透光部93的表面的昇華物9除去。因此可抑制UV的透光率變差對UV處理所造成的不良影響，另外也具有可降低拆解處理容器2並實行內部清潔之維修頻度的效果。在第3實施態樣中，亦可於排氣管96形成熱觸媒層以抑制昇華物在下游側的排氣通路析出，此時，亦可將排氣管96設置成像第2實施態樣那樣的壓力損失很大的構造。另外亦可將載置台81設置成可隨意升降的構造，並令載置台81上升，使除去用基板接近UV透光部93的底面，在本例中只要清潔用基板6的至少表面側被熱觸媒層5所覆蓋即可，惟亦可表面以及背面這兩面都被覆蓋。本發明的基板處理裝置，不限於加熱基板的裝置，亦可為例如利用處理氣體蝕刻基板的裝置。According to the third aspect, the cleaning substrate 6 is heated to remove the sublimation 9 attached to the surface of the UV light transmitting portion 93. Therefore, it is possible to suppress the bad influence caused by the deterioration of the light transmittance of UV on the UV treatment, and also have the effect of reducing the maintenance frequency of disassembling the processing container 2 and performing internal cleaning. In the third embodiment, a thermal catalyst layer may also be formed on the exhaust pipe 96 to suppress the precipitation of sublimates in the exhaust path on the downstream side. At this time, the exhaust pipe 96 may also be set to image the second embodiment. Such a structure with a large pressure loss. In addition, the mounting table 81 can be set to a structure that can be raised and lowered arbitrarily, and the mounting table 81 is raised to bring the removal substrate close to the bottom surface of the UV light transmitting portion 93. In this example, as long as at least the surface side of the cleaning substrate 6 is heated, The catalyst layer 5 may be covered, but both the front surface and the back surface may be covered. The substrate processing apparatus of the present invention is not limited to an apparatus for heating a substrate, and may be, for example, an apparatus for etching a substrate with a processing gas.
關於熱觸媒層所使用之材料的例子，亦可為以下之化學式所示的物質。BeO（氧化鈹）、MgO（氧化鎂）、CaO（氧化鈣）、SrO（氧化鍶）、BaO（氧化鋇）、CeO2 （二氧化鈰）、TiO2 （二氧化鈦）、ZrO2 （二氧化鋯）、V2 O5 （五氧化二釩）、Y2 O3 （三氧化二釔）、Y2 O2 S（二氧硫化二釔）、Nb2 O5 （五氧化二鈮）、Ta2 O5 （五氧化二鉭）、MoO3 （三氧化鉬）、WO3 （三氧化鎢）、MnO2 （二氧化錳）、Fe2 O3 （三氧化二鐵）、Fe3 O4 （四氧化三鐵）、MgFe2 O4 、NiFe2 O4 、ZnFe2 O4 、ZnCo2 O4 、ZnO（氧化鋅）、CdO（氧化鎘）、MgAl2 O4 、ZnAl2 O4 、Tl2 O3 （三氧化二鉈）、In2 O3 （三氧化二銦）、SnO2 （二氧化錫）、PbO2 （二氧化鉛）、UO2 （二氧化鈾）、Cr2 O3 （三氧化二鉻）、MgCr2 O4 、FeCrO4 、CoCrO4 、ZnCr2 O4 、WO2 （二氧化鎢）、MnO（氧化錳）、Mn3 O4 （四氧化三錳）、Mn2 O3 （三氧化二錳）、FeO（氧化鐵）、NiO（氧化鎳）、CoO（氧化鈷）、Co3 O4 （四氧化三鈷）、PdO（氧化鈀）、CuO（氧化銅）、Cu2 O（氧化二銅）、Ag2 O（氧化二銀）、CoAl2 O4 、NiAl2 O4 、Ti2 O（氧化二鈦）、GeO（氧化鍺）、PbO（氧化鉛）、TiO（氧化鈦）、Ti2 O3 （三氧化二鈦）、VO（氧化釩）、MoO2 （二氧化鉬）、IrO2 （二氧化銥）、RuO2 （二氧化釕）。再者該等熱觸媒體，宜加熱到200℃以上，更宜加熱到300℃以上的溫度。另外當欲將熱觸媒體設置於處理容器的內面或排氣管的內面時，亦可設置例如將熱觸媒體形成板狀的成型體。另外維修用基板亦可為由熱觸媒體所構成的板狀體。As an example of the material used for a thermal catalyst layer, the thing shown by the following chemical formula may be sufficient. BeO (beryllium oxide), MgO (magnesium oxide), CaO (calcium oxide), SrO (strontium oxide), BaO (barium oxide), CeO 2 (cerium dioxide), TiO 2 (titanium dioxide), ZrO 2 (zirconia) ), V 2 O 5 (Vanadium Pentoxide), Y 2 O 3 (Yttrium Dioxide), Y 2 O 2 S (Yttrium Dioxy Sulfide), Nb 2 O 5 (Niobium Pentoxide), Ta 2 O 5 (tantalum pentoxide), MoO 3 (molybdenum trioxide), WO 3 (tungsten trioxide), MnO 2 (manganese dioxide), Fe 2 O 3 (iron trioxide), Fe 3 O 4 (four Ferric oxide), MgFe 2 O 4 , NiFe 2 O 4 , ZnFe 2 O 4 , ZnCo 2 O 4 , ZnO (zinc oxide), CdO (cadmium oxide), MgAl 2 O 4 , ZnAl 2 O 4 , Tl 2 O 3 (thorium oxide), In 2 O 3 (indium trioxide), SnO 2 (tin dioxide), PbO 2 (lead dioxide), UO 2 (uranium dioxide), Cr 2 O 3 (trioxide Dichrome), MgCr 2 O 4 , FeCrO 4 , CoCrO 4 , ZnCr 2 O 4 , WO 2 (tungsten dioxide), MnO (manganese oxide), Mn 3 O 4 (trimanganese tetraoxide), Mn 2 O 3 ( Manganese trioxide), FeO (iron oxide), NiO (oxidation ), CoO (cobalt oxide), Co 3 O 4 (cobalt oxide), PdO (palladium oxide), CuO (copper oxide), Cu 2 O (dinitrogen copper), Ag 2 O (dinitrogen silver), CoAl 2 O 4 , NiAl 2 O 4 , Ti 2 O (titanium oxide), GeO (germanium oxide), PbO (lead oxide), TiO (titanium oxide), Ti 2 O 3 (titanium trioxide), VO (vanadium oxide), MoO 2 (molybdenum dioxide), IrO 2 (iridium dioxide), RuO 2 (ruthenium dioxide). Furthermore, such thermal contact media should be heated above 200 ° C, and more preferably above 300 ° C. In addition, when the thermal contact medium is intended to be provided on the inner surface of the processing container or the exhaust pipe, for example, a plate-shaped molded body may be provided to form the thermal contact medium. In addition, the maintenance substrate may be a plate-shaped body made of a thermal contact medium.
另外藉由將該等材料使用於熱觸媒層5，便可將聚對苯二甲酸乙二酯、聚丙烯、聚氯乙烯、聚苯乙烯、ABS樹脂、環氧樹脂、酚殘留物、苯、甲苯、揮發性有機碳等分解。In addition, by using these materials in the thermal catalyst layer 5, polyethylene terephthalate, polypropylene, polyvinyl chloride, polystyrene, ABS resin, epoxy resin, phenol residue, and benzene can be used. , Toluene, volatile organic carbon, etc.
另外對於覆蓋在處理容器或排氣管的內面的熱觸媒層而言，除了將熱觸媒層加熱的加熱部之外，更可設置將熱觸媒層冷卻的冷卻機構。例如可列舉出於處理容器的壁內或排氣管的周圍埋設冷卻配管，並令例如被冷卻器所冷卻之冷卻水流通於冷卻配管的內部的構造。在該等構造中，例如利用冷卻機構將熱觸媒層冷卻，令處理容器內的蒙氣或排氣管內的流通排氣所含之有機成分析出於熱觸媒層的表面。之後利用加熱機構將熱觸媒層加熱，以將昇華物分解除去。若根據該等方法，由於可將熱觸媒層冷卻以積極地捕捉收集蒙氣或排氣中所含之有機成分，故捕捉收集效率會提高，如是便可除去比加熱熱觸媒層以除去有機成分的方式更多的昇華物。藉此便可更進一步抑制流到排氣管的下游側的有機成分的量。In addition, the thermal catalyst layer covering the inner surface of the processing container or the exhaust pipe may be provided with a cooling mechanism for cooling the thermal catalyst layer in addition to the heating section that heats the thermal catalyst layer. For example, there is a structure in which a cooling pipe is buried in the wall of the processing container or around the exhaust pipe, and the cooling water cooled by the cooler is allowed to flow through the inside of the cooling pipe, for example. In these structures, for example, the thermal catalyst layer is cooled by a cooling mechanism, so that the organic components contained in the masking gas in the processing container or the circulating exhaust gas in the exhaust pipe are analyzed on the surface of the thermal catalyst layer. Thereafter, the thermal catalyst layer is heated by a heating mechanism to decompose and remove the sublimate. According to these methods, since the thermal catalyst layer can be cooled to actively capture and collect the organic components contained in the mask or exhaust gas, the capture and collection efficiency will be improved. If so, it can be removed than by heating the thermal catalyst layer to remove Organic ingredients are way more sublimated. This can further suppress the amount of organic components flowing to the downstream side of the exhaust pipe.
［第4實施態樣］ 以下所述之第4～6實施態樣，係表示將本發明之基板處理裝置適用於加熱處理裝置的例子。本發明，亦可將多孔質的熱觸媒體（熱觸媒物質）配置於排氣通路並使排氣流通過該熱觸媒體之中，本發明之第4實施態樣，係採用該等方法的加熱處理裝置的構造例。圖15以及圖16所示之例，取代上述圖7所示之加熱處理裝置中的包含排氣通路300在內的構造部位，具備包含將多孔質的熱觸媒形成塊狀的成型體（亦即塊體322）在內的構造體310。構造體310，具備：包含一端與形成於蓋部22的排氣口32連接的排氣通路312在內的本體部分311，以及從形成於該排氣通路312的另一端側的排氣埠313插入該排氣通路312內的筒匣320。[Fourth Embodiment] The fourth to sixth embodiments described below are examples in which the substrate processing apparatus of the present invention is applied to a heat processing apparatus. In the present invention, a porous thermal contact medium (thermal catalyst substance) may be arranged in the exhaust passage and the exhaust gas flow passes through the thermal contact medium. The fourth embodiment of the present invention adopts these methods Example of the structure of the heat treatment device. The example shown in FIGS. 15 and 16 includes a molded body including a porous thermal catalyst formed into a block (instead of a structural part including the exhaust passage 300 in the heat treatment apparatus shown in FIG. 7 (also That is, the structure 310 including the block 322). The structure 310 includes a main body portion 311 including an exhaust passage 312 connected at one end to an exhaust port 32 formed in the cover portion 22, and an exhaust port 313 formed from the other end side of the exhaust passage 312. The cartridge 320 is inserted into the exhaust passage 312.
筒匣320，具備殼體321以及多孔質的熱觸媒體（亦即塊體322）。殼體321係保持塊體322的保持體，形成從排氣通路312的上游側向下游側延伸且頂面為開口的大略箱型。殼體321，製作成將筒匣320插入排氣通路312時排氣通路312的壁面與筒匣320之間會形成不會妨礙到筒匣320裝卸之程度的極狹窄的間隙。另外於殼體321的長度方向一端側的底面，在對應排氣口32的位置形成了孔部323。再者殼體320的長度方向的另一端側的側面為開放的，同時用來將筒匣320從排氣通路312拉出的水平突片324以從殼體321的底面延伸而出的方式形成。The cartridge 320 includes a casing 321 and a porous thermal contact medium (that is, a block 322). The housing 321 is a holding body that holds the block 322 and is formed in a substantially box shape that extends from the upstream side to the downstream side of the exhaust passage 312 and has an open top surface. The casing 321 is manufactured so that when the cartridge 320 is inserted into the exhaust path 312, a very narrow gap is formed between the wall surface of the exhaust path 312 and the cartridge 320 so as not to hinder the mounting and dismounting of the cartridge 320. In addition, a hole portion 323 is formed on a bottom surface of one end side of the housing 321 in the longitudinal direction at a position corresponding to the exhaust port 32. Furthermore, the side surface of the other end side of the housing 320 in the longitudinal direction is open, and a horizontal tab 324 for pulling the cartridge 320 out of the exhaust passage 312 is formed so as to extend from the bottom surface of the housing 321 .
塊體322，例如構成令熱觸媒物質附著於由陶瓷所構成之多孔質體的觸媒載持體（亦即過濾器）的構造，並形成可收納於殼體321的角柱狀。然後如圖16所示的由塊體322插入殼體321所構成的筒匣320，從排氣埠313插入排氣通路312。排氣埠313，與連接於工場用資源之圖中未顯示的導管連接。在本例的加熱處理裝置中，例如設置於蓋體22的加熱器10透過本體部分311，將排氣通路312內的塊體322加熱，使熱觸媒體活性化。另外亦可於本體部分311設置加熱器，並利用該加熱器將塊體322加熱。然後當對處理容器2內的蒙氣進行排氣時，排氣流在流過排氣通路312時會通過構成塊體322的多孔質體的空隙，並經由導管排出。The block 322 has a structure in which, for example, a catalyst carrier (that is, a filter) in which a thermal catalyst substance is adhered to a porous body made of ceramics, and is formed in a corner column shape that can be accommodated in the housing 321. Then, as shown in FIG. 16, the cartridge 320 formed by inserting the block 322 into the housing 321 is inserted into the exhaust passage 312 from the exhaust port 313. The exhaust port 313 is connected to a duct (not shown) connected to the resource for the workshop. In the heat treatment apparatus of this example, for example, the heater 10 provided in the cover 22 penetrates the main body portion 311 and heats the block 322 in the exhaust passage 312 to activate the thermal contact medium. In addition, a heater may be provided in the main body portion 311, and the block 322 may be heated by the heater. When the masked gas in the processing container 2 is exhausted, the exhaust gas flow passes through the exhaust passage 312 and passes through the gap of the porous body constituting the block 322 and is discharged through the duct.
藉由像這樣配置成將多孔質體的塊體322塞入排氣通路312，並使排氣流通過塊體322內的空隙，排氣流所含之昇華物接觸熱觸媒體的面積便會變大，排氣流中的昇華物的分解效率便更良好。然後例如在每經過一既定枚數之晶圓W的處理或一段加熱處理裝置的既定運作時間便將排氣埠313與導管分離，並從排氣通路312將筒匣320取出，然後將塊體322更換成新的塊體322。By arranging the porous body block 322 into the exhaust passage 312 as described above and passing the exhaust gas flow through the gap in the block body 322, the area where the sublimate contained in the exhaust gas contacts the thermally-contact medium will be As it becomes larger, the decomposition efficiency of the sublimates in the exhaust gas flow becomes better. Then, for example, the exhaust port 313 is separated from the duct every time a predetermined number of wafers W are processed or a predetermined operating time of the heating processing device, and the cartridge 320 is taken out from the exhaust path 312, and then the block is removed. 322 is replaced with a new block 322.
在加熱處理裝置中，在實行加熱處理之後，會有排氣所含之難分解物質阻塞塊體322的空隙，而使排氣流量降低之虞，惟若根據第4實施態樣的加熱處理裝置，便可快速而簡單地從排氣通路312將塊體322取出並更換之。因此可簡單地實行維修，以圖縮短維修所導致之裝置運轉中斷時間（down time）。In the heat treatment device, after the heat treatment is performed, the hardly decomposable substances contained in the exhaust gas may block the voids of the block 322 and the exhaust gas flow rate may be reduced. The block 322 can be quickly and simply removed from the exhaust passage 312 and replaced. Therefore, maintenance can be simply performed in order to shorten the down time of the device operation caused by the maintenance.
另外亦可取代塊體322，例如使熱觸媒體附著於粒狀的陶瓷球的表面，並以填埋殼體321的間隙的方式填充之。將熱觸媒體所設之基質設置成粒子狀的態樣，表面積也會變大，故具有同樣的效果。另外，當欲將塊體322設置在排氣通路312的內部時，亦可使塊體322形成「塊體322的構造材料（亦即陶瓷）的密度從配置在排氣通路312的上游側（排氣口32側）的部位向配置在下游側（導管側）的部位變高（越上游側空隙率越高）」的態樣。藉由該等構造，排氣通過塊體322時的壓力損失會變小，故排氣流會平穩地流過排氣通路312，如是便可輕易地確保所需要的排氣流量。再者熱觸媒用的加熱部，亦可埋設於塊體322的內部。例如可列舉出如圖17所示的在塊體322的內部設置在長度方向上複數次彎曲迂迴的加熱器325的構造。Alternatively, instead of the block 322, for example, a thermal contact medium may be adhered to the surface of the granular ceramic ball and filled with a gap of the case 321. The same effect can be obtained by setting the matrix of the thermal contact medium in a particulate state, and the surface area will also increase. In addition, when the block body 322 is to be provided inside the exhaust passage 312, the block body 322 may also be formed so that the density of the structural material (ie, ceramic) of the block 322 is arranged on the upstream side of the exhaust passage 312 The position on the exhaust port 32 side) becomes higher toward the site disposed on the downstream side (the duct side) (the higher the upstream side, the higher the void ratio) ". With these structures, the pressure loss when the exhaust gas passes through the block 322 becomes small, so that the exhaust gas flow smoothly flows through the exhaust passage 312, so that the required exhaust gas flow rate can be easily ensured. Moreover, the heating part for a thermal catalyst may be buried in the inside of the block 322. For example, as shown in FIG. 17, a structure in which a heater 325 that is bent in a plurality of lengthwise directions in the longitudinal direction inside the block 322 is provided.
［第5實施態樣］ 另外針對對於構成將複數個加熱處理裝置的各自的排氣通路連接於共通的排氣通路（亦即集合導管）以進行排氣的構造的基板處理裝置適用本發明的實施態樣，用圖18進行説明。在圖18中，加熱處理裝置1所連接之300，係表示加熱處理裝置1的個別的排氣通路，330係表示共通的集合導管，集合導管330的下游側與工場用資源連接。然後該實施態樣，如圖18所示的具備熱觸媒物質的熱觸媒單元340以可隨意裝卸的方式設置於集合導管330。[Fifth Embodiment Aspect] In addition, the present invention is applicable to a substrate processing apparatus that has a structure that connects the respective exhaust passages of a plurality of heat treatment apparatuses to a common exhaust passage (that is, a collection duct) to exhaust. An embodiment will be described with reference to FIG. 18. In FIG. 18, 300 connected to the heat treatment device 1 indicates individual exhaust passages of the heat treatment device 1, 330 indicates a common collecting duct, and the downstream side of the collecting duct 330 is connected to the plant resource. Then, in this embodiment, a thermal catalyst unit 340 including a thermal catalyst substance as shown in FIG. 18 is detachably installed in the collecting duct 330.
熱觸媒單元340，例如，如圖18的縱剖面圖所示的，具備剖面形狀與集合導管330的剖面形狀對應的管路332，透過形成於管路332的兩端的凸緣331與集合導管330側的凸緣，以可隨意裝卸的方式連接於集合導管330。在管路332的內部，固定著多孔質的熱觸媒體的塊體341，於管路332的外表面，遍及整個周圍設置了用來加熱塊體341的加熱器342。另外加熱器342的周圍，被隔熱材343所覆蓋，然後隔熱材343的外側被蓋部344所覆蓋。另外亦可取代在蓋部344與加熱器342之間設置隔熱材343，令冷卻水流通於蓋部344與加熱器343之間，或是供給隔熱用的空氣。在本例中，係於各加熱處理裝置1的個別的排氣通路300，例如，如第2實施態樣或第4實施態樣所述的，設置熱觸媒體，除了個別的排氣管300之外，更於集合導管330設置熱觸媒體，藉以避免個別的排氣通路300所無法除去的昇華物附著堆積在下游側。The thermal catalyst unit 340 includes, for example, as shown in the longitudinal cross-sectional view of FIG. 18, a pipe 332 having a cross-sectional shape corresponding to the cross-sectional shape of the collecting pipe 330, and transmitting through the flanges 331 and the collecting pipe formed at both ends of the pipe 332. The flange on the 330 side is detachably connected to the collecting duct 330. Inside the pipe 332, a block 341 of a porous thermal contact medium is fixed, and a heater 342 for heating the block 341 is provided on the outer surface of the pipe 332 over the entire periphery. In addition, the periphery of the heater 342 is covered with a heat insulating material 343, and then the outside of the heat insulating material 343 is covered with a cover portion 344. Alternatively, instead of providing a heat insulating material 343 between the cover portion 344 and the heater 342, cooling water may be circulated between the cover portion 344 and the heater 343, or air for heat insulation may be supplied. In this example, the individual exhaust passages 300 attached to the respective heat treatment apparatuses 1 are provided with a thermal contact medium as described in the second embodiment or the fourth embodiment, except for the individual exhaust pipes 300. In addition, a thermal contact medium is provided in the collecting duct 330 to prevent the sublimation objects that cannot be removed by the individual exhaust passages 300 from being deposited on the downstream side.
另外在第5實施態樣中，在並未於個別的排氣通路300設置熱觸媒體而係於處理容器2的內面設置熱觸媒體的情況下，或是於個別的排氣通路300以及處理容器2的內面均未設置熱觸媒體的情況下，亦可僅於集合導管330設置熱觸媒體。另外在第3實施態樣的加熱處理裝置中，亦可構成更於集合導管330設置熱觸媒單元340的構造。In addition, in the fifth embodiment, when the thermal contact medium is not provided in the individual exhaust passages 300 and the thermal contact medium is provided on the inner surface of the processing container 2, or in the individual exhaust passages 300 and In the case where none of the inner surfaces of the processing container 2 is provided with a thermal contact medium, the thermal contact medium may be provided only in the collecting duct 330. The heat treatment apparatus according to the third embodiment may have a structure in which a thermal catalyst unit 340 is further provided to the collecting duct 330.
［第6實施態樣］ 圖19、圖20，係表示本發明之第6實施態樣的加熱處理裝置。該加熱處理裝置，利用埋設了加熱部（亦即加熱器361）的熱板362以及該熱板362所嵌入之基體370構成載置晶圓W的載置台360，於載置台360的周緣部位（亦即基體370的表面）沿著周圍方向遍及整個周圍設置了複數個具有開口的排氣口363。在基體370內，以各排氣口363為開口端的排氣通路364，設置成往下方延伸並向載置台360的中央部位彎曲。另一方面，於載置台360的底面中央部位，連接了排氣管365，且設置了例如圓柱狀的塊體366，其底面塞住該排氣管365的開口部，另外其周圍面塞住排氣通路364的下游側。亦即，排氣管365與排氣通路364之間被塊體366塞住，塊體366的頂面與熱板362的底面接觸。塊體366，與第4實施態樣所使用的塊體322同樣，構成令熱觸媒體附著於例如多孔質之陶瓷過濾器的構造。另外，排氣通路364，亦可設置成由對應各排氣口363上下延伸的排氣通路以及該等排氣通路的下端於其形成開口的共通排氣室所構成，並在該排氣室內設置塊體366的構造。另外在載置台360的上方，設置了蓋部367，蓋部367，於頂板部中央連接了用來供給例如氮氣（N2 氣體）等的清洗氣體的清洗氣體供給管路368。因此在該實施態樣中，加熱器361，兼作熱觸媒用的加熱部。[Sixth Embodiment] Figs. 19 and 20 show a heat treatment apparatus according to a sixth embodiment of the present invention. This heat treatment apparatus uses a hot plate 362 in which a heating portion (ie, a heater 361) is embedded and a substrate 370 in which the hot plate 362 is embedded to form a mounting table 360 on which a wafer W is placed. That is, the surface of the base body 370) is provided with a plurality of exhaust openings 363 having openings along the entire periphery. An exhaust passage 364 having each exhaust port 363 as an open end is provided in the base 370 so as to extend downward and bend toward a central portion of the mounting table 360. On the other hand, an exhaust pipe 365 is connected to a central portion of the bottom surface of the mounting table 360, and a cylindrical block 366 is provided, for example. The bottom surface of the exhaust pipe 365 blocks the opening of the exhaust pipe 365, and the surrounding surface is blocked. A downstream side of the exhaust passage 364. That is, the block 366 is plugged between the exhaust pipe 365 and the exhaust passage 364, and the top surface of the block 366 is in contact with the bottom surface of the heat plate 362. The block 366 has a structure in which a thermal contact medium is adhered to, for example, a porous ceramic filter, similarly to the block 322 used in the fourth embodiment. In addition, the exhaust passage 364 may be provided by an exhaust passage extending up and down corresponding to each exhaust port 363 and a common exhaust chamber in which a lower end of the exhaust passage forms an opening, and is arranged in the exhaust chamber. The structure of the block 366 is provided. Also above the mounting table 360 is provided a cover portion 367, the cap portion 367, the central portion of the top plate is connected for supplying a cleaning gas, for example nitrogen purge gas (N 2 gas) supply line 368 or the like. Therefore, in this embodiment, the heater 361 doubles as a heating portion for a thermal catalyst.
藉由以該等方式構成，便可利用載置台360的熱板362將晶圓W加熱，同時將設置於排氣通路364的熱觸媒體（亦即塊體366）加熱，使其活性化。然後由於在從排氣口363將晶圓W的上方的蒙氣排出時，排氣會通過受到加熱的塊體366才排出，故可將排氣所含之昇華物分解。另外第1～第5實施態樣所示之加熱處理裝置的載置台，亦可適用圖19、圖20所示之載置台360。With such a configuration, the wafer W can be heated by the hot plate 362 of the mounting table 360, and at the same time, the thermal contact medium (ie, the block 366) provided in the exhaust passage 364 can be heated and activated. Then, when the mask above the wafer W is discharged from the exhaust port 363, the exhaust is discharged through the heated block 366, so that the sublimates contained in the exhaust can be decomposed. In addition, the mounting table of the heat treatment apparatus shown in the first to fifth embodiments can also be applied to the mounting table 360 shown in FIGS. 19 and 20.
另外例如亦可測定在排氣通路中，設置了熱觸媒體的區域的下游側的排氣壓，並在排氣壓超過閾値時，令熱觸媒體的溫度上升。例如，如圖21所示的，在第4實施態樣所示之加熱處理裝置中，在排氣通路312的設置了塊體322的區域的下游側，設置測定排氣壓的排氣壓測定部326。然後構成「預先將排氣壓的上限閾値記憶於控制部100，比較排氣壓測定部326的測定値與壓力的上限閾値，當排氣壓超過上限閾値時，令熱觸媒用的加熱部（亦即加熱器10）的溫度上升到例如500℃」的構造。In addition, for example, it is possible to measure the exhaust pressure on the downstream side of the area where the thermal contact medium is provided in the exhaust passage, and to increase the temperature of the thermal contact medium when the exhaust pressure exceeds the threshold value. For example, as shown in FIG. 21, in the heat treatment apparatus shown in the fourth embodiment, an exhaust pressure measurement unit 326 for measuring exhaust pressure is provided on the downstream side of a region of the exhaust passage 312 where the block 322 is provided. . Then, “the upper limit threshold 値 of the exhaust pressure is stored in the control unit 100 in advance, and the measurement 値 of the exhaust pressure measurement unit 326 is compared with the upper limit threshold 値 of the pressure. When the exhaust pressure exceeds the upper limit threshold ，, the heating unit for the thermal catalyst (ie The temperature of the heater 10) rises to, for example, 500 ° C.
例如在加熱處理裝置中，在實行晶圓W的處理，接著進行蒙氣的排氣之後，未能分解完畢的昇華物有時會附著於塊體322或排氣通路312，壓力損失可能會變高，故會有導致排氣流量降低之虞。因此藉由在排氣壓上升時提高加熱器10的溫度，以提高熱觸媒體的活性。藉此，便可將阻塞於塊體322的物質或附著於排氣通路312的附著物也分解，故可降低壓力損失，並降低維修的頻度。For example, in a heat treatment device, after the wafer W is processed and then the mask is exhausted, the sublimated matter that has not been decomposed may adhere to the block 322 or the exhaust passage 312, and the pressure loss may change. High, there is a possibility that the exhaust flow rate will decrease. Therefore, by increasing the temperature of the heater 10 when the exhaust pressure rises, the activity of the thermal contact medium is increased. As a result, the material blocked in the block 322 or the adhered matter attached to the exhaust passage 312 can also be decomposed, so that the pressure loss can be reduced and the frequency of maintenance can be reduced.
另外排氣壓測定部326，亦可設置在比設置熱觸媒體的區域更靠上游側（處理容器2側）之處。或者亦可測定排氣的流量，並在流量低於下限値時令熱觸媒用的加熱部的溫度提高。再者亦可例如每經過既定枚數之晶圓W的處理，或者裝置的運作時間每經過既定的時間，便在一定的時間內提高熱觸媒用的加熱部的加熱溫度。藉由以該等方式構成便可定期地將附著於成型體的難分解物質除去，進而降低維修的頻度。The exhaust pressure measurement unit 326 may be provided on the upstream side (the processing container 2 side) than the area where the thermal contact medium is provided. Alternatively, the flow rate of the exhaust gas may be measured, and the temperature of the heating portion for the thermal catalyst may be increased when the flow rate is lower than the lower limit. In addition, for example, each time a predetermined number of wafers W are processed, or each time the operating time of the device passes a predetermined time, the heating temperature of the heating portion for the heating catalyst may be increased within a certain period of time. With such a configuration, the hardly decomposable substances adhering to the molded body can be removed regularly, and the frequency of maintenance can be reduced.
［檢證試驗］ 對於被Cr2 O3 所覆蓋之基板，以令聚合物（FRP）附著於表面的樣本為參考例，以並未令聚合物附著於表面的樣本為比較例，測定令參考例以及比較例的樣本的溫度緩緩從0℃提高到600℃時的質量的變化以及熱流。熱流的測定，使用示差掃描熱量測定器。圖22以及圖23係分別顯示出參考例以及比較例的對應溫度的樣本的質量的變化率（質量％）以及熱流（μV）的値的特性圖。若根據該結果，在參考例中，在溫度為300℃～350℃附近熱流增加，質量減少。吾人認為，這是因為，Cr2 O3 作為熱觸媒發揮作用，將聚合物分解的關係。因此，可以說，當使用Cr2 O3 作為熱觸媒層時，藉由加熱到300℃左右，便可將所附著之聚合物分解。[Verification Test] For a substrate covered with Cr 2 O 3 , a sample with a polymer (FRP) attached to the surface is taken as a reference example, and a sample without a polymer attached to the surface is used as a comparative example. The change in mass and heat flow when the temperature of the samples of Examples and Comparative Examples were gradually increased from 0 ° C to 600 ° C. The heat flow was measured using a differential scanning calorimeter. FIG. 22 and FIG. 23 are characteristic diagrams showing the change rate (mass%) and the heat flux (μV) of the mass of the samples corresponding to the temperature of the reference example and the comparative example, respectively. Based on the results, in the reference example, the heat flow increases near the temperature of 300 ° C to 350 ° C, and the mass decreases. In my opinion, this is because Cr 2 O 3 functions as a thermal catalyst and decomposes the polymer. Therefore, it can be said that when Cr 2 O 3 is used as the thermal catalyst layer, the attached polymer can be decomposed by heating to about 300 ° C.
1‧‧‧加熱處理裝置1‧‧‧heat treatment device
2‧‧‧處理容器2‧‧‧handling container
4‧‧‧LED模組4‧‧‧LED Module
5‧‧‧熱觸媒層5‧‧‧Hot catalyst layer
6‧‧‧清潔用基板6‧‧‧ Cleaning substrate
9‧‧‧昇華物9‧‧‧ Sublimation
10‧‧‧加熱器10‧‧‧ heater
18‧‧‧升降臂18‧‧‧ Lifting arm
19‧‧‧升降機構19‧‧‧ Lifting mechanism
22‧‧‧蓋部22‧‧‧ Cover
23‧‧‧升降銷23‧‧‧ Lifting Pin
24‧‧‧升降機構24‧‧‧ Lifting mechanism
25‧‧‧下構件25‧‧‧ lower member
26‧‧‧支持構件26‧‧‧Support components
27‧‧‧基台27‧‧‧ abutment
28‧‧‧底部28‧‧‧ bottom
29‧‧‧貫通孔29‧‧‧through hole
30‧‧‧排氣通路30‧‧‧Exhaust passage
31‧‧‧下側排氣通路31‧‧‧ lower side exhaust passage
31a‧‧‧連通口31a‧‧‧Connect
32‧‧‧排氣口32‧‧‧ exhaust port
33‧‧‧上側排氣通路33‧‧‧ Upper side exhaust passage
34‧‧‧排氣管34‧‧‧Exhaust pipe
36‧‧‧導熱板36‧‧‧Heat conduction plate
41‧‧‧LED陣列41‧‧‧LED Array
42‧‧‧透光窗42‧‧‧light window
43‧‧‧反射板43‧‧‧Reflector
44‧‧‧突起部44‧‧‧ protrusion
51‧‧‧銷51‧‧‧pin
70‧‧‧框體70‧‧‧Frame
71‧‧‧搬入搬出口71‧‧‧ moved in and out
72‧‧‧擋門72‧‧‧ door
73‧‧‧分隔板73‧‧‧ divider
74‧‧‧搬運臂74‧‧‧carrying arm
75‧‧‧升降銷75‧‧‧lift pin
76‧‧‧升降機構76‧‧‧Lifting mechanism
81‧‧‧載置台81‧‧‧mounting table
82‧‧‧加熱器82‧‧‧heater
83‧‧‧升降銷83‧‧‧ Lifting Pin
84‧‧‧貫通孔84‧‧‧through hole
85‧‧‧升降機構85‧‧‧Lifting mechanism
91‧‧‧燈室91‧‧‧light room
92‧‧‧UV燈92‧‧‧UV Light
93‧‧‧UV透光部93‧‧‧UV light transmission
94‧‧‧氣體供給部94‧‧‧Gas Supply Department
95‧‧‧排氣口95‧‧‧ exhaust port
96‧‧‧排氣管96‧‧‧ exhaust pipe
97‧‧‧排氣機構97‧‧‧Exhaust mechanism
99‧‧‧選擇部99‧‧‧Selection Department
100‧‧‧控制部100‧‧‧Control Department
101‧‧‧載置台101‧‧‧mounting table
102‧‧‧閘門102‧‧‧Gate
103‧‧‧搬運臂103‧‧‧carrying arm
104‧‧‧搬運臂104‧‧‧carrying arm
105‧‧‧搬運臂105‧‧‧carrying arm
106‧‧‧搬運臂106‧‧‧carrying arm
107‧‧‧搬運臂107‧‧‧carrying arm
110‧‧‧塗布單元110‧‧‧coating unit
111‧‧‧杯具模組111‧‧‧cup module
300‧‧‧排氣通路300‧‧‧Exhaust passage
301‧‧‧排氣通路301‧‧‧Exhaust passage
302‧‧‧捕捉板部302‧‧‧Capture Board
303‧‧‧排氣通路303‧‧‧Exhaust passage
304‧‧‧捕捉板部304‧‧‧Capture Board
310‧‧‧構造體310‧‧‧ Structure
311‧‧‧本體部分311‧‧‧ body part
312‧‧‧排氣通路312‧‧‧Exhaust passage
313‧‧‧排氣埠313‧‧‧ exhaust port
320‧‧‧筒匣320‧‧‧ cartridge
321‧‧‧殼體321‧‧‧shell
322‧‧‧塊體322‧‧‧block
323‧‧‧孔部323‧‧‧hole
324‧‧‧水平突片324‧‧‧horizontal tab
325‧‧‧加熱器325‧‧‧heater
326‧‧‧排氣壓測定部326‧‧‧Exhaust Pressure Measurement Department
330‧‧‧集合導管330‧‧‧ Collection catheter
331‧‧‧凸緣331‧‧‧ flange
332‧‧‧管路332‧‧‧pipe
340‧‧‧熱觸媒單元340‧‧‧Hot catalyst unit
341‧‧‧塊體341‧‧‧block
342‧‧‧加熱器342‧‧‧heater
343‧‧‧隔熱材343‧‧‧Insulation
344‧‧‧蓋部344‧‧‧ Cover
360‧‧‧載置台360‧‧‧mounting table
361‧‧‧加熱器361‧‧‧heater
362‧‧‧熱板362‧‧‧Hot plate
363‧‧‧排氣口363‧‧‧Exhaust port
364‧‧‧排氣通路364‧‧‧Exhaust passage
365‧‧‧排氣管365‧‧‧Exhaust pipe
366‧‧‧塊體366‧‧‧block
367‧‧‧蓋部367‧‧‧ Cover
368‧‧‧清洗氣體供給管路368‧‧‧Purge gas supply line
370‧‧‧基體370‧‧‧ substrate
A3‧‧‧主臂A3‧‧‧Main Arm
B1‧‧‧載置區塊B1‧‧‧ placement block
B2‧‧‧處理區塊B2‧‧‧Processing Block
B3‧‧‧介面區塊B3‧‧‧Interface Block
B4‧‧‧曝光站B4‧‧‧Exposure Station
BCT‧‧‧反射防止膜形成處理BCT‧‧‧Anti-reflection film formation treatment
C‧‧‧載體C‧‧‧ carrier
COT‧‧‧光阻膜形成處理COT‧‧‧Photoresist film formation process
D1‧‧‧第1單位區塊D1‧‧‧Unit 1 Block
D2‧‧‧第2單位區塊D2‧‧‧Unit 2 Block
D3‧‧‧第3單位區塊D3‧‧‧Unit 3 Block
D4‧‧‧第4單位區塊D4‧‧‧Unit 4
D5‧‧‧第5單位區塊D5‧‧‧Unit 5
D6‧‧‧第6單位區塊D6‧‧‧Unit 6
DEV‧‧‧顯影處理DEV‧‧‧Development processing
R3‧‧‧搬運區域R3‧‧‧ handling area
U1~U10‧‧‧棚台單元U1 ~ U10‧‧‧ Shed units
W‧‧‧晶圓W‧‧‧ Wafer
[圖1] 係表示塗布、顯影裝置的立體圖。 [圖2] 係表示塗布、顯影裝置的俯視圖。 [圖3] 係表示第1實施態樣的加熱處理裝置的縱斷側視圖。 [圖4] 係表示該加熱處理裝置的作用的説明圖。 [圖5] 係表示本發明的基板處理裝置的維修方法的説明圖。 [圖6] 係表示本發明的基板處理裝置的維修方法的説明圖。 [圖7] 係表示第2實施態樣的加熱處理裝置的縱斷側視圖。 [圖8] 係表示加熱處理裝置的排氣通路的俯視圖。 [圖9] 係表示加熱處理裝置的排氣通路的另一例的俯視圖以及側視圖。 [圖10] 係表示加熱處理裝置的排氣通路的另一例的俯視圖。 [圖11] 係表示第3實施態樣的平坦化裝置的縱斷側視圖。 [圖12] 係表示在平坦化裝置中所產生之昇華物的説明圖。 [圖13] 係表示平坦化裝置的維修方法的説明圖。 [圖14] 係表示平坦化裝置的維修方法的説明圖。 [圖15] 係表示第4實施態樣的加熱處理裝置的剖面圖。 [圖16] 係表示第4實施態樣的加熱處理裝置的分解立體圖。 [圖17] 係表示塊體以及熱觸媒用的加熱部的例子的立體圖。 [圖18] 係表示第5實施態樣的加熱處理裝置的立體圖以及熱觸媒單元的剖面圖。 [圖19] 係表示第6實施態樣的加熱處理裝置的剖面圖。 [圖20] 係表示第6實施態樣的加熱處理裝置的載置台的俯視圖。 [圖21] 係表示設置了排氣壓測定部的加熱裝置的説明圖。 [圖22] 係表示參考例的質量變化與熱量的溫度變化的特性圖。 [圖23] 係表示比較例的質量變化與熱量的溫度變化的特性圖。[FIG. 1] A perspective view showing a coating and developing device. Fig. 2 is a plan view showing a coating and developing device. 3 is a longitudinal side view showing a heat treatment apparatus according to a first embodiment. [Fig. 4] Fig. 4 is an explanatory diagram showing an operation of the heat treatment device. [Fig. 5] Fig. 5 is an explanatory diagram showing a maintenance method of a substrate processing apparatus according to the present invention. [Fig. 6] Fig. 6 is an explanatory diagram showing a maintenance method of a substrate processing apparatus according to the present invention. 7 is a longitudinal sectional side view showing a heat treatment apparatus according to a second embodiment. FIG. 8 is a plan view showing an exhaust passage of a heat treatment device. 9 is a plan view and a side view showing another example of an exhaust passage of the heat treatment device. FIG. 10 is a plan view showing another example of the exhaust passage of the heat treatment device. 11 is a longitudinal sectional side view showing a flattening device according to a third embodiment. [Fig. 12] An explanatory view showing a sublimation product generated in a flattening device. [Fig. 13] Fig. 13 is an explanatory diagram showing a maintenance method of the planarization device. [Fig. 14] Fig. 14 is an explanatory diagram showing a maintenance method of the planarization device. 15 is a cross-sectional view showing a heat treatment apparatus according to a fourth embodiment. 16 is an exploded perspective view showing a heat treatment apparatus according to a fourth embodiment. 17 is a perspective view showing an example of a block and a heating unit for a thermal catalyst. 18 is a perspective view of a heat treatment device according to a fifth embodiment and a cross-sectional view of a thermal catalyst unit. 19 is a cross-sectional view showing a heat treatment apparatus according to a sixth embodiment. 20 is a plan view showing a mounting table of a heat treatment apparatus according to a sixth embodiment. [FIG. 21] An explanatory diagram showing a heating device provided with an exhaust pressure measurement section. 22 is a characteristic diagram showing a change in mass and a change in temperature of heat in a reference example. 23 is a characteristic diagram showing a change in mass and a change in temperature of heat in a comparative example.
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| CN106409670B (en) | 2021-03-05 |
| KR20170015210A (en) | 2017-02-08 |
| JP2017034230A (en) | 2017-02-09 |
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