JP6820767B2 - Peripheral coating device and peripheral coating method - Google Patents

Description

The present invention relates to a peripheral coating apparatus and a peripheral coating method for discharging a coating liquid onto a substrate to form an annular coating film at least on the peripheral edge of the surface of the substrate.

For example, in the photolithography process in the manufacturing process of a semiconductor device, for example, a coating process in which a coating liquid is supplied onto the surface of a semiconductor wafer (hereinafter referred to as “wafer”) as a substrate to form an antireflection film or a resist film, or a resist film. The exposure process for exposing the wafer to a predetermined pattern, the development process for developing the exposed resist film, the heat treatment for heating the wafer, and the like are sequentially performed to form a predetermined resist pattern on the wafer. Then, an etching process is performed using the resist pattern as a mask, and then a resist film removal process or the like is performed to form a predetermined pattern on the wafer.

By the way, in addition to the above coating process, a peripheral coating process for forming a resist film only on the peripheral edge of the wafer may be performed (see Patent Document 1).
In Patent Document 1, as an apparatus for forming a resist film having a uniform film thickness only on the peripheral edge of the wafer, the resist solution nozzle is applied to the peripheral edge of the wafer while rotating the wafer and discharging the resist solution from the resist solution nozzle. Scan-in control to move the resist liquid from the outside onto the peripheral edge of the wafer, and move the resist liquid nozzle from the peripheral edge of the wafer to the outside of the peripheral edge of the wafer while rotating the wafer and discharging the resist liquid from the resist liquid nozzle. Disclosed is an apparatus for moving the resist liquid nozzle at a speed lower than the speed at which the resist liquid moves to the peripheral edge side of the wafer when the scan-out control is performed and the scan-out control is performed.

JP-A-2014-110386

However, in the peripheral coating apparatus disclosed in Patent Document 1, when an unnecessary organic substance is present on the wafer, the adhesion of the resist film on the peripheral portion to the wafer may not be sufficient.

The present invention has been made in view of this point, and an object of the present invention is to provide a peripheral coating apparatus and a peripheral coating method for forming a coating film having high adhesion at a desired portion including a peripheral portion of a substrate.

In order to achieve the above object, the peripheral coating apparatus of the present invention includes a substrate holding unit that holds and rotates the substrate, an irradiation unit that irradiates the substrate with ultraviolet rays, and a coating liquid supply unit that supplies the coating liquid to the substrate. , Are provided in the same housing, the substrate holding portion, the irradiation portion, and the coating liquid supply portion are controlled, and at least the peripheral edge of the surface of the substrate is irradiated with ultraviolet rays, and then the coating liquid is discharged to form an annular shape. The irradiation unit includes a control unit that forms a coating film on the substrate, and the irradiation unit has a member that irradiates ultraviolet rays from the center side of the substrate toward the outside of the substrate, and the member irradiates the surface peripheral portion of the substrate with ultraviolet rays. The feature is that the angle with respect to the horizontal plane is smaller than the inclined surface on the front side of the bevel of the substrate .

It is preferable that the irradiation unit has another member that irradiates the bevel of the substrate with ultraviolet rays.

The peripheral coating device includes a heating portion for heating the annular coating film formed on the substrate in the housing , and the heating portion has a hot plate that contacts only the peripheral portion of the substrate, and the substrate is viewed from above. further comprising preferably Rukoto the heating unit driving unit that enables moving the hot plate between the said periphery only to the contact with the position where the contact position between a position away outward.

The present invention from another viewpoint is a peripheral coating method in which a coating liquid is discharged onto a substrate to form an annular coating film along the peripheral edge of the substrate, and the irradiation step of irradiating at least the peripheral edge of the surface of the substrate with ultraviolet rays. after UV irradiation, discharging a coating solution on at least the peripheral portion of the surface of the substrate, a coating step of forming a coating film of said annular, only contains the irradiation step, the angle with respect to the horizontal plane of the front side of the bevel of the substrate It is characterized in that the peripheral portion of the surface of the substrate is irradiated with ultraviolet rays from a member that is smaller than the angle of the inclined surface and irradiates ultraviolet rays from the center side of the substrate toward the outside of the substrate .

The irradiation step preferably includes a step of irradiating the bevel of the substrate with ultraviolet rays from a member other than the member.

Peripheral coating method further by heating unit for heating the peripheral portion of the substrate, seen including a heating step of heating the annular coating film formed on the substrate, the heating step, the annular coating film is formed After raising the substrate, it is preferable to move the heating portion from the outside of the substrate to a position where the peripheral edge portion of the substrate is heated with respect to the substrate to heat the annular coating film .

From another point of view, the present invention is a readable computer storage medium that stores a program that operates on the computer of the control unit that controls the peripheral coating device so that the peripheral coating method is executed by the peripheral coating device. ..

According to the present invention, a coating film having high adhesion to the substrate can be formed at a desired location including the peripheral edge of the substrate.

It is a top view which shows the outline of the structure of the substrate processing system provided with the peripheral coating apparatus which concerns on 1st Embodiment of this invention. It is a front view which shows the outline of the structure of the substrate processing system provided with the peripheral coating apparatus which concerns on 1st Embodiment of this invention. It is a back view which shows the outline of the structure of the substrate processing system provided with the peripheral coating apparatus which concerns on 1st Embodiment of this invention. It is a vertical sectional view which shows the outline of the structure of the peripheral coating apparatus which concerns on 1st Embodiment. It is sectional drawing which shows the outline of the structure of the peripheral coating apparatus which concerns on 1st Embodiment. It is a figure for demonstrating an irradiation nozzle. It is a figure for demonstrating the 1st heating unit. It is a figure which shows the flowchart explaining the process in the peripheral coating apparatus which concerns on 1st Embodiment. It is a figure for demonstrating another example of an irradiation part. It is a figure for demonstrating another example of an irradiation part. It is a figure for demonstrating another example of an irradiation part. It is a figure for demonstrating another example of the 1st heating unit. It is a figure for demonstrating another example of the 1st heating unit. It is a vertical sectional view which shows the outline of the structure of the peripheral coating apparatus which concerns on 2nd Embodiment. It is sectional drawing which shows the outline of the structure of the peripheral coating apparatus which concerns on 2nd Embodiment. It is a figure which shows the state which looked at the circumference of the wafer at the time of heating from the upper side. It is a figure which shows the state which the circumference of the wafer at the time of heating was seen from the horizontal direction. It is a figure which shows the state which the circumference of the wafer W at the time of heating is seen in the horizontal direction from the angle different from FIG. It is a figure for demonstrating another example of a heating unit. It is sectional drawing which shows the outline of the structure of the peripheral coating apparatus which concerns on 3rd Embodiment.

Hereinafter, embodiments of the present invention will be described. In the present specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals to omit duplicate description.

(First Embodiment)
FIG. 1 is an explanatory diagram showing an outline of a configuration of a substrate processing system 1 including a peripheral coating apparatus according to a first embodiment. 2 and 3 are a front view and a rear view schematically showing an outline of the internal configuration of the substrate processing system 1, respectively. In the following description, a case where the coating liquid is a resist liquid and the peripheral coating device is a device for applying the resist liquid to the substrate will be described as an example.

As shown in FIG. 1, the substrate processing system 1 includes a cassette station 10 in which a cassette C accommodating a plurality of wafers W is carried in and out, and a processing station 11 provided with a plurality of various processing devices for performing predetermined processing on the wafer W. And the interface station 13 that transfers the wafer W to and from the exposure apparatus 12 adjacent to the processing station 11 are integrally connected.

The cassette station 10 is provided with a cassette mounting table 20. The cassette mounting table 20 is provided with a plurality of cassette mounting plates 21 on which the cassette C is mounted when the cassette C is carried in and out of the substrate processing system 1.

As shown in FIG. 1, the cassette station 10 is provided with a wafer transfer device 23 that is movable on a transfer path 22 extending in the X direction. The wafer transfer device 23 is movable in the vertical direction and around the vertical axis (θ direction), and is a transfer device for the cassette C on each cassette mounting plate 21 and the third block G3 of the processing station 11 described later. Wafer W can be conveyed between them.

The processing station 11 is provided with a plurality of blocks G1, G2, G3, and G4 having various devices, for example, the first to fourth blocks. For example, a first block G1 is provided on the front side of the processing station 11 (negative direction side in the X direction in FIG. 1), and a second block G1 is provided on the back side (positive direction side in the X direction in FIG. 1) of the processing station 11. Block G2 is provided. Further, a third block G3 is provided on the cassette station 10 side of the processing station 11 (negative direction side in the Y direction in FIG. 1), and the interface station 13 side of the processing station 11 (positive direction side in the Y direction in FIG. 1). Is provided with a fourth block G4.

For example, in the first block G1, as shown in FIG. 2, a plurality of liquid treatment devices, for example, a development processing device 30 for developing and processing wafer W, and an antireflection film (hereinafter, “lower antireflection”) under the resist film of wafer W. A lower antireflection film forming device 31 that forms a film), a resist coating device 32 that applies a resist solution to a wafer W to form a resist film, and an antireflection film (hereinafter, "upper antireflection") on an upper layer of a resist film of a wafer W. The upper antireflection film forming device 33 and the peripheral coating device 34 forming the "preventive film") are arranged in this order from the bottom.

For example, the developing processing device 30, the lower antireflection film forming device 31, the resist coating device 32, the upper antireflection film forming device 33, and the peripheral coating device 34 are arranged side by side in the horizontal direction. The number and arrangement of the development processing device 30, the lower antireflection film forming device 31, the resist coating device 32, the upper antireflection film forming device 33, and the peripheral coating device 34 can be arbitrarily selected.

In the developing processing device 30, the lower antireflection film forming device 31, the resist coating device 32, and the upper antireflection film forming device 33, for example, spin coating is performed by applying a predetermined coating liquid on the wafer W. In spin coating, for example, the coating liquid is discharged onto the wafer W from the coating nozzle, and the wafer W is rotated to diffuse the coating liquid on the surface of the wafer W. The configuration of the peripheral coating device 34 will be described later.

For example, in the second block G2, as shown in FIG. 3, a heat treatment apparatus 40 that performs heat treatment such as heating and cooling of the wafer W, an adhesion apparatus 41 for improving the fixability between the resist liquid and the wafer W, and the wafer W. Peripheral exposure devices 42 that expose the outer peripheral portion are provided side by side in the vertical direction and the horizontal direction. The number and arrangement of the heat treatment apparatus 40, the adhesion apparatus 41, and the peripheral exposure apparatus 42 can also be arbitrarily selected.

For example, in the third block G3, a plurality of delivery devices 50, 51, 52, 53, 54, 55, and 56 are provided in order from the bottom. Further, the fourth block G4 is provided with a plurality of delivery devices 60, 61, 62 in order from the bottom.

As shown in FIG. 1, a wafer transfer region D is formed in a region surrounded by the first block G1 to the fourth block G4. In the wafer transfer region D, for example, a plurality of wafer transfer devices 70 having transfer arms 70a that can move in the Y direction, the X direction, the θ direction, and the vertical direction are arranged. The wafer transfer device 70 moves in the wafer transfer area D and transfers the wafer W to predetermined devices in the surrounding first block G1, second block G2, third block G3, and fourth block G4. it can.

Further, in the wafer transfer region D, a shuttle transfer device 80 for linearly transporting the wafer W between the third block G3 and the fourth block G4 is provided.

The shuttle transfer device 80 is linearly movable in the Y direction of FIG. 3, for example. The shuttle transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer device 52 of the third block G3 and the transfer device 62 of the fourth block G4.

As shown in FIG. 1, a wafer transfer device 100 is provided next to the third block G3 on the positive direction side in the X direction. The wafer transfer device 100 has, for example, a transfer arm 100a that can move in the X direction, the θ direction, and the vertical direction. The wafer transfer device 100 can move up and down while the wafer W is supported by the transfer arm 100a, and can transfer the wafer W to each transfer device in the third block G3.

The interface station 13 is provided with a wafer transfer device 110 and a transfer device 111. The wafer transfer device 110 has, for example, a transfer arm 110a that can move in the Y direction, the θ direction, and the vertical direction. The wafer transfer device 110 can, for example, support the wafer W on the transfer arm 110a and transfer the wafer W between each transfer device, the transfer device 111, and the exposure device 12 in the fourth block G4.

The substrate processing system 1 is provided with a control unit 300. The control unit 300 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program that controls the processing of the wafer W in the substrate processing system 1. Further, the program storage unit also stores a program for controlling the operation of the drive system of the above-mentioned various processing devices and transfer devices to realize the coating process described later in the substrate processing system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnet optical desk (MO), or memory card. It may have been installed in the control unit 300 from the storage medium.

Next, the configuration of the peripheral coating device 34 described above will be described with reference to FIGS. 4 and 5. The peripheral coating device 34 has a processing container 120 that can seal the inside as shown in FIGS. 4 and 5. A wafer W loading / unloading port (not shown) is formed on the side surface of the processing container 120.

A spin chuck 121 is provided in the processing container 120 as a substrate holding portion for holding and rotating the wafer W. The spin chuck 121 can be rotated to a predetermined speed by a chuck drive unit 122 such as a motor. Further, the chuck drive unit 122 is provided with a lifting drive mechanism such as a cylinder, and the spin chuck 121 can be raised and lowered.

Further, an elevating pin 123 for supporting and elevating the wafer W from below is provided so as to surround the lower part of the spin chuck 121. The elevating pin 123 can be elevated by the elevating drive unit 124. The elevating pin 123 can be projected to a position higher than the upper surface of the spin chuck 121 by the elevating drive unit 124, and the wafer W can be delivered to the spin chuck 121.

Around the spin chuck 121, an outer cup 130 that receives and collects the liquid scattered or dropped from the wafer W and an inner cup 140 located on the inner peripheral side of the outer cup 130 are provided.

As shown in FIG. 5, rails 150A and 150B extending along the Y direction (left-right direction in FIG. 5) are formed on the X-direction negative direction (downward direction in FIG. 5) side of the outer cup 130. The rails 150A and 150B are formed, for example, from the outside of the outer cup 130 on the negative direction in the Y direction (left direction in FIG. 5) to the outside on the positive direction in the Y direction (right direction in FIG. 5). The rail 150A is provided with two arms 151 and 152, and the rail 150B is similarly provided with two arms 153 and 154.

The first arm 151 supports a resist liquid supply nozzle 160 that constitutes a coating liquid supply unit that supplies the resist liquid as the coating liquid. The first arm 151 is movable on the rail 150A by the nozzle driving unit 161 as a moving mechanism. As a result, the resist liquid supply nozzle 160 passes from the standby portion 162 installed on the outer side of the outer cup 130 on the positive side in the Y direction to the upper part of the center of the wafer W in the outer cup 130, and Y of the outer cup 130. It can move to the standby portion 163 provided on the outside on the negative direction side. Further, the nozzle driving unit 161 allows the first arm 151 to be raised and lowered, and the height of the resist liquid supply nozzle 160 can be adjusted.
The resist liquid supply nozzle 160 is connected to a resist liquid supply source (not shown) via a pipe (not shown), a pump, or the like, and is configured so that the resist liquid can be discharged from the tip of the resist liquid supply nozzle 160.

The second arm 152 supports an irradiation nozzle 170 that constitutes an irradiation unit that irradiates the wafer W with ultraviolet rays. The second arm 152 is movable on the rail 150A by the nozzle driving unit 171 as a moving mechanism. As a result, the irradiation nozzle 170 can move from the outside of the outer cup 130 on the positive direction side in the Y direction to above the wafer W in the outer cup 130, specifically, near a part of the peripheral edge of the wafer W. .. Further, the nozzle driving unit 171 allows the second arm 152 to be raised and lowered, and the height of the irradiation nozzle 170 can be adjusted.

The first and second heating units 180 and 190, which form a heating unit that heats at least the peripheral portion of the wafer W, are supported on the third and fourth arms 153 and 154, respectively. The third and fourth arms 153 and 154 are movable on the rail 150B by the heating unit drive units 181 and 191 as a moving mechanism. As a result, the first and second heating units 180 and 190 can move from the outside of the outer cup 130 to the upper part of the outer cup 130. Further, the heating unit driving units 181 and 191 allow the third and fourth arms 153 and 154 to move up and down, and the heights of the first and second heating units 180 and 190 can be adjusted.

A control unit 300 is connected to the peripheral coating device 34, and the spin chuck 121, the resist liquid supply nozzle 160, the irradiation nozzle 170, the first and second peripheral coating devices 34 are controlled by the control unit 300 to control each part of the peripheral coating device 34. The heating units 180 and 190 of the above are controlled. By performing this control, the peripheral edge of the surface of the wafer W is irradiated with ultraviolet rays, the resist liquid is discharged to the peripheral edge, an annular resist film is formed along the peripheral edge, and the annular resist film is heated. To do. The annular resist film is used, for example, as a protective film for preventing the resist pattern formed before the formation of the annular resist film from becoming an abnormal shape during the etching process of the central portion of the wafer W.

Subsequently, the irradiation nozzle 170 will be described with reference to FIG.
The irradiation nozzle 170 is a member that irradiates, for example, ultraviolet rays having a wavelength of 172 nm. Further, as shown in FIG. 6A, the irradiation nozzle 170 is provided so as to be movable above the peripheral edge of the surface of the wafer W held by the chuck 121 along the radial direction of the wafer W. Therefore, in the peripheral coating device 34, by moving the irradiation nozzle 170 while rotating the wafer W held by the chuck 121, it is possible to irradiate only the peripheral portion of the surface W1 of the wafer W with ultraviolet rays. In this specification, it refers to the front surface of the portion of the wafer W excluding the bevel W2.

Further, as shown in FIG. 6B, the irradiation nozzle 170 is tilted with respect to the surface of the wafer W so as to irradiate ultraviolet rays from the center side of the wafer W toward the outside of the wafer W. As a result, the ultraviolet rays from the irradiation nozzle 170 are not irradiated to the bevel W2 of the wafer W, but are irradiated only to the peripheral edge of the surface W1 of the wafer W. The angle θ1 of the irradiation nozzle 170 with respect to the surface W1 of the wafer W, that is, the angle θ1 with respect to the horizontal plane is smaller than, for example, the angle θ2 with respect to the horizontal plane of the inclined surface W21 on the front side of the bevel W2.

Next, the first and second heating units 180 and 190 will be described with reference to FIG. 5 and with reference to FIG. 7.
The first and second heating units 180 and 190 have semicircular hot plates 182 and 192, respectively, as shown in FIG. A heater (not shown) is built in the hot plates 182 and 192. When heating the peripheral edge of the wafer W, the first and second heating units 180 and 190 are in contact with each other, for example, above the outer cup 130, and the hot plates 182 and 192 form an annular shape. Wafer W is placed on 182 and 192. That is, the hot plates 182 and 192 form an annular hot plate on which the wafer W is placed.

Further, the first and second heating units 180 and 190 have peripheral walls 183 and 193 that cover the outer periphery of the hot plates 182 and 192, and exhaust pipes 184 and 194 that are connected to the outer bottoms of the peripheral walls 183 and 193.

As shown in FIG. 7, the bottom surface of the peripheral wall 183 substantially coincides with the bottom surface of the hot plate 182, and the height of the peripheral wall 183 is formed to be larger than the sum of the thickness of the hot plate 182 and the thickness of the wafer W. .. Further, inside the peripheral wall 183, a semicircular first exhaust passage 185 is provided on the upper side in the horizontal plane, and a semicircular second exhaust passage 186 is provided on the lower side in the horizontal plane. Further, inside the peripheral wall 183, for example, holes 187 are provided at equal intervals along the peripheral wall 183. The hole 187 opens in the horizontal direction and communicates with the first exhaust passage 185. Further, inside the peripheral wall 183, a plurality of vertical paths 188 extending in the vertical direction and communicating the first exhaust passage 185 and the second exhaust passage 186 are provided along the peripheral wall 183, and the second exhaust passage 186 and the second exhaust passage 186. A communication passage 189 that communicates with the exhaust pipe 184 is provided.

When the wafer W is heated, the wafer W is placed on the first heating unit 180 when the elevating pin 123 to which the wafer W is delivered from the spin chuck 121 is lowered. Specifically, the wafer W is placed on the hot plate 182 with the peripheral edge portion of the wafer W in contact with the hot plate 182. The hot plate 182 is preheated, and therefore, by placing the wafer W on the hot plate 182, heating of the peripheral portion of the wafer W is started. Further, during heating by the hot plate 182 of the wafer W, the heated gas in the upper part of the peripheral edge of the wafer W is the hole 187, the first exhaust passage 185, the vertical passage 188, the second exhaust passage 186, and the communication passage 189. , Exhaust through the exhaust pipe 184. Therefore, the central portion of the wafer W is not heated by the heated gas at the upper portion of the peripheral portion of the wafer W.

Since the peripheral wall 193 of the second heating unit 190 has the same configuration as the peripheral wall 183 of the first heating unit 180, the description thereof will be omitted.

Next, the wafer processing performed by using the substrate processing system 1 will be described. First, the cassette C containing the plurality of wafers W is carried into the cassette station 10 of the substrate processing system 1, and each wafer W in the cassette C is sequentially conveyed to the delivery device 53 of the processing station 11 by the wafer transfer device 23. ..

Next, the wafer W is conveyed to the heat treatment apparatus 40 of the second block G2 and subjected to temperature control processing. After that, the wafer W is transported by the wafer transfer device 70 to, for example, the lower antireflection film forming device 31 of the first block G1, and the lower antireflection film is formed on the wafer W. After that, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2, heat-treated, and temperature-controlled.

Next, the wafer W is transferred to the adhering apparatus 41 and subjected to adhering processing. After that, the wafer W is conveyed to the resist coating device 32 of the first block G1 to form a resist film on the wafer W. After that, the wafer W is transferred to the heat treatment apparatus 40 and prebaked. In the pre-baking treatment, the same treatment as the heat treatment after the formation of the lower antireflection film is performed, and in the heat treatment after the formation of the antireflection film, the post-exposure baking treatment, and the post-baking treatment, which will be described later, the same treatment is performed. .. However, the heat treatment devices 40 used for each heat treatment are different from each other.

Next, the wafer W is conveyed to the upper antireflection film forming device 33, and the upper antireflection film is formed on the wafer W. After that, the wafer W is transferred to the heat treatment apparatus 40, heated, and temperature-controlled. After that, the wafer W is conveyed to the peripheral exposure apparatus 42 and subjected to peripheral exposure processing.

Next, the wafer W is conveyed to the exposure apparatus 12 and exposed in a predetermined pattern.

Next, the wafer W is conveyed to the heat treatment apparatus 40 and baked after exposure. After that, the wafer W is transported to, for example, the developing processing apparatus 30 for developing processing. After the development process is completed, the wafer W is transferred to the heat treatment apparatus 40 and post-baked.

Next, the wafer W is conveyed to the peripheral coating apparatus 34, and the resist liquid is applied to the peripheral edge of the surface of the wafer W to form an annular resist film. The wafer W is conveyed to the cassette C of the cassette mounting plate 21 to complete a series of photolithography steps.

Next, the process in the peripheral coating apparatus 34 will be described with reference to FIG.
First, the wafer W is carried into the peripheral coating device 34 by the wafer transfer device 70 (step S1). The wafer W carried into the peripheral coating device 34 is delivered from the wafer transfer device 70 to the elevating pin 123 which has been raised and waited in advance, and then the elevating pin 123 is lowered to spin in the outer cup 130. It is delivered to the chuck 121 and is attracted and held.

Subsequently, ultraviolet rays are irradiated from the irradiation nozzle 170 to the peripheral edge of the surface of the wafer W (step S2). Specifically, first, the arm 152 moves the irradiation nozzle 170 from the outside of the outer cup 130 to the upper side of the wafer W and slightly inside the peripheral edge of the surface of the wafer W. Then, while rotating the wafer W several times at a rotation speed of, for example, 20 to 60 rpm by the spin chuck 121, ultraviolet rays having a wavelength of 172 nm are irradiated from the irradiation nozzle 170. In this state, the irradiation nozzle 170 is moved outward, for example, to the upper side of the outer edge of the peripheral edge of the surface W1 of the wafer W.
The ultraviolet rays emitted from the irradiation nozzle 170 generate active oxygen and ozone in the vicinity of the peripheral edge of the surface W1 of the wafer W. The peripheral portion is washed with these active oxygen and ozone, that is, unnecessary organic substances existing in the peripheral portion are removed. Further, the peripheral portion is modified by the above-mentioned active oxygen and ozone, that is, the peripheral portion is made hydrophilic. In particular, in the present embodiment, as described above, the angle θ1 of the irradiation nozzle 170 with respect to the surface W1 of the wafer W, that is, the angle θ1 with respect to the horizontal plane is smaller than the angle θ2 with respect to the horizontal plane of the inclined surface W21 on the front side of the bevel W2. Even if the ultraviolet rays from the nozzle 170 are diffused light on the surface W1 of the wafer W, only the peripheral edge of the surface W1 of the wafer W can be modified without modifying the bevel W2 of the wafer W.

After the cleaning treatment and the reforming treatment with ultraviolet rays, the resist liquid is applied from the resist liquid supply nozzle 160 to the peripheral edge of the surface W1 of the wafer W to form an annular resist film (step S3). Specifically, first, the irradiation nozzle 170 is moved from the inside to the outside of the outer cup 130 by the arm 151, and the resist liquid supply nozzle 160 of the standby portion 163 outside the outer cup 130 is moved by the arm 151 to the surface of the wafer W. Move to above the inner edge of the peripheral edge of the. After that, the resist liquid is supplied onto the wafer W from the resist liquid supply nozzle 160 while rotating the wafer W by the spin chuck 121. At this time, the rotation speed and the rotation time of the wafer W are, for example, 100 to 1000 rpm and 1 to 5 seconds, respectively, and the discharge flow rate of the resist liquid is adjusted to be, for example, 1 ml per wafer W. As a result, an annular resist film can be formed on the surface W1 of the wafer W. Further, in the present embodiment, the peripheral edge of the surface W1 of the wafer W on which the annular resist film is formed is cleaned as described above, so that the annular resist film has high adhesion to the wafer W. Further, in the present embodiment, since the bevel W2 of the wafer W is not modified and only the peripheral edge of the surface W1 of the wafer W is modified, the resist liquid on the peripheral edge of the surface W1 of the wafer W is modified. Can be prevented from flowing out of the peripheral edge portion via the bevel W2, and an annular resist film having a desired thickness and a uniform film thickness can be obtained.

After forming the annular resist film, the peripheral portions of the wafer W are heated by the first and second heating units 180 and 190, and the annular resist film is heated (step S4). Specifically, first, the arm 151 moves the resist liquid supply nozzle 160 from the inside to the outside standby portion of the outer cup 130. Then, the elevating pin 123 is raised, and the wafer W is delivered from the spin chuck 121 to the elevating pin 123. After that, the arms 153 and 154 move the first and second heating units 180 and 190 above the outer cup 130, and the hot plates 182 and 192 of the first and second heating units 180 and 190 heat the ring. Form a plate. Subsequently, the elevating pin 123 is lowered, and the wafer W is placed on the hot plates 182 and 192 in a form in which the peripheral edge portion of the wafer W abuts on the hot plates 182 and 192, and the peripheral edge portion of the wafer W, that is, an annular shape on the wafer. Heat the resist film of. For example, the temperature of the hot plates 182 and 192 during heating is about 100 ° C., and the heating time is 60 seconds.

After heating the peripheral edge portion of the wafer W, the wafer W is carried out from the peripheral edge coating device 34 by the wafer transfer device 70 (step S5). Specifically, the elevating pin 123 is raised to transfer the wafer W from the hot plates 182 and 192 to the elevating pin 123, and then to the wafer transfer device 70, and the wafer transfer device 70 transfers the wafer W from the peripheral coating device 34. Let it be carried out.

In the present embodiment, the peripheral coating device 34 is provided with a spin chuck 121, an irradiation nozzle 170, and a resist liquid supply nozzle 160, and the cleaning treatment and modification treatment with ultraviolet rays and the annular coating film forming treatment are the same treatment. It can be done in the container 120, that is, in the same housing. Therefore, the wafer transfer between the two treatments required when the treatment with ultraviolet rays and the annular coating film forming treatment are performed by separate devices is not necessary in the peripheral coating device 34 of the present embodiment, and therefore the particles on the wafer W. The possibility of contamination can be reduced. Further, the peripheral coating device 34 can prevent the substrate processing system having the device for forming the annular resist film from becoming larger than the case where both of the above treatments are performed by separate devices.

Further, in the present embodiment, the peripheral coating apparatus 34 is provided with the first and second heating units 180 and 190, and in addition to the treatment with ultraviolet rays and the annular coating film forming treatment, the annular coating on the wafer W The heat treatment of the membrane can also be performed in the same apparatus. Therefore, the possibility that particles on the wafer W are mixed can be further reduced, and the size of the substrate processing system can be prevented from increasing.
However, the heat treatment of the annular coating film of the wafer W may not be performed by the peripheral coating apparatus, but may be performed by another apparatus in the substrate processing system.

FIG. 9 is a diagram illustrating another example of an irradiation unit that irradiates ultraviolet rays.
As shown in FIG. 9A, the irradiation unit of this example is provided with a lens 172 that collects ultraviolet rays in the irradiation nozzle 170. Since the lens 172 is provided in this way, as shown in FIG. 9B, the region irradiated with the ultraviolet rays from the irradiation nozzle 170 can be limited. Therefore, it is possible to more reliably irradiate only the peripheral edge portion of the surface W1 of the wafer W with ultraviolet rays without irradiating the bevel W2 of the wafer W with ultraviolet rays, and it is possible to modify only the peripheral edge portion.

In the figure, the lens 172 is built in the irradiation nozzle 170, but the lens 172 may be provided separately from the irradiation nozzle 170. In the case of a separate body, it is preferable that the lens 172 is also fixed to the arm 152 (see FIG. 5) to which the irradiation nozzle 170 is fixed, and the distance between the irradiation nozzle 170 and the lens 172 is constant.
Further, in the figure, the irradiation nozzle 170 is tilted with respect to the surface W1 of the wafer W so as to irradiate ultraviolet rays from the center side of the wafer W toward the outside of the wafer W. However, when the lens 172 is provided as in this example, even if the irradiation nozzle 170 is not tilted and is perpendicular to the surface W1 of the wafer W, only the peripheral edge of the surface W1 of the wafer W is irradiated with ultraviolet rays to irradiate the peripheral edge. Only the part can be modified.

FIG. 10 is a diagram illustrating another example of an irradiation unit that irradiates ultraviolet rays.
In the irradiation section shown in FIG. 6, only the peripheral edge portion of the surface W1 of the wafer W is cleaned and modified, whereby a resist film having high adhesion to the wafer W and having a desired thickness and a uniform film thickness is applied to the peripheral edge portion. It is for forming. However, it may be necessary to clean and modify the bevel W2 of the wafer W to form a coating film such as a resist film on the bevel W2 as well. For example, when forming a metal hard mask, a coating film is formed as a protective film that prevents the peripheral edge of the surface W1 of the wafer W and the bevel W2 from being contaminated.

The irradiation portion of the example of FIG. 10 is for cleaning and modifying the bevel W2 as well, and as shown in FIG. 10A, reflects the ultraviolet rays from the irradiation nozzle 170 and irradiates the bevel W2 of the wafer W with the ultraviolet rays. The mirror 173 is provided on the outside of the wafer W held by the spin chuck 121 as a member separate from the irradiation nozzle 170.
Therefore, the ultraviolet rays from the irradiation nozzle 170 are irradiated toward the peripheral edge of the surface W1 of the wafer W and the inclined surface W21 on the front side of the bevel W2, and are emitted from the irradiation nozzle 170 as shown in FIG. 10 (B). The ultraviolet rays reflected by the mirror 173 can be irradiated toward the side end surface W22 of the bevel W2 of the wafer W and the inclined surface W23 on the back side. Thereby, the peripheral portion of the surface W1 and the inclined surface W21 on the front side of the bevel W2, the side end surface W22 of the bevel W2, and the inclined surface W23 on the back side can be cleaned and modified. Therefore, a resist film having high adhesion to the wafer W can be formed on the peripheral edge of the surface W1 of the wafer W and the bevel W2.

It is preferable that the mirror 173 is fixed to an arm that can move in the horizontal direction and the vertical direction like the irradiation nozzle 170 and is located in the outer cup 130 (see FIG. 5) only during the ultraviolet irradiation treatment.

FIG. 11 is a diagram illustrating another example of an irradiation unit that irradiates ultraviolet rays.
The irradiation portion of the example of FIG. 11 is for forming a coating film not only on the peripheral edge of the surface W1 of the wafer W but also on the bevel W2, as in the example of FIG. 10 (A). As shown in the above, the irradiation nozzle 174 is provided as a member separate from the irradiation nozzle 170. With this irradiation nozzle 174, the bevel W2 can be irradiated with ultraviolet rays, and specifically, the inclined surface W21 on the front side of the bevel W2 of the wafer W and the side end surface W22 of the bevel W2 can be irradiated with ultraviolet rays. Therefore, the peripheral edge of the surface W1 of the wafer W can be cleaned and modified by the irradiation nozzle 170, and the inclined surface W21 on the front side of the bevel W2 and the side end surface W22 of the bevel W2 can be cleaned and modified by the irradiation nozzle 174. Therefore, a resist film having high adhesion to the wafer W can be formed on the peripheral edge of the surface W1 of the wafer W and the bevel W2.

FIG. 12 is a diagram illustrating another example of the first heating unit 180.
In the first heating unit 180 of the example of FIG. 7, the peripheral wall 183 covers only the outer periphery of the hot plate 182. On the other hand, in the first heating unit 180 of the example of FIG. 12, the peripheral wall 183 covers the outer periphery and the upper portion of the hot plate 182. Further, inside the peripheral wall 183, a semicircular first exhaust passage 185 is provided on the upper side in the horizontal plane, and a semicircular second exhaust passage 186 is provided on the lower side in the horizontal plane. A part of the first exhaust passage 185 is provided so as to be located above the hot plate 182. Further, on the surface of the peripheral wall 183 facing the hot plate 182, for example, holes 187 are provided at equal intervals along the peripheral wall 183. The hole 187 opens in the vertical direction and communicates with the first exhaust passage 185. Further, inside the peripheral wall 183, a plurality of vertical paths 188 extending in the vertical direction and communicating the first exhaust passage 185 and the second exhaust passage 186 are provided along the peripheral wall 183, and the second exhaust passage 186 and the second exhaust passage 186. A communication passage 189 that communicates with the exhaust pipe 184 is provided.

During heating by the hot plate 182 of the wafer W, the heated gas at the upper part of the peripheral edge of the wafer W is exhausted through the holes 187, the first exhaust passage 185, the vertical passage 188, the second exhaust passage 186, the communication passage 189, and the exhaust. It is exhausted through the pipe 184. Therefore, it is possible to more reliably prevent the central portion of the wafer W from being heated by the heated gas at the upper portion of the peripheral portion of the wafer W.

When the first heating unit 180 is configured as shown in FIG. 12, the second heating unit 190 is also configured in the same manner.

FIG. 13 is a diagram illustrating another example of the first heating unit 180.
In the first heating unit 180 of the example of FIG. 13, the peripheral wall 183 covers the outer periphery and the upper portion of the hot plate 182, as in the case of FIG. However, unlike the example of FIG. 12, the first heating unit 180 of this example has an exhaust pipe 184 provided on the outer upper portion of the peripheral wall 183. Further, the internal shape of the first heating unit 180 of this example is different from that of the example of FIG. Specifically, on the upper side of the peripheral wall 183 of the first heating unit 180 of this example, an exhaust passage 185 which is semicircular in the horizontal plane and a part of which is located above the hot plate 182 is provided. There is. On the surface of the peripheral wall 183 facing the hot plate 182, for example, holes 187 are provided at equal intervals along the peripheral wall 183. The hole 187 is open in the vertical direction and communicates with the exhaust passage 185. Further, inside the peripheral wall 183, a communication passage 189'that communicates the exhaust passage 185 and the exhaust pipe 184 is provided.

During heating by the hot plate 182 of the wafer W, the heated gas in the upper part of the peripheral edge of the wafer W is exhausted through the holes 187, the exhaust passage 185, the communication passage 189', and the exhaust pipe 184. Therefore, it is possible to more reliably prevent the central portion of the wafer W from being heated by the heated gas at the upper portion of the peripheral portion of the wafer W.

When the first heating unit 180 is configured as shown in FIG. 13, the second heating unit 190 is also configured in the same manner.

In the above example, the heating portion for heating the peripheral portion of the wafer W is composed of two heating units having a hot plate, in other words, the annular hot plate for heating the peripheral portion of the wafer is divided into two. Was there. However, the number of divisions of the annular hot plate may be 3 or more. Further, in the form in which the peripheral wall 183 covers the upper portion of the wafer W placed on the hot plate 182 as shown in FIGS. 12 and 13, the annular hot plate needs to be divided, but the hot plate needs to be divided as shown in FIG. If the peripheral wall 183 does not cover the upper portion of the wafer W placed on the 182, the annular hot plate does not need to be divided.

(Second Embodiment)
The configuration of the peripheral coating apparatus according to the second embodiment will be described with reference to FIGS. 14 and 15.
The peripheral coating apparatus of the present embodiment has a different structure of the heating portion for heating the peripheral portion of the wafer W from the peripheral coating apparatus 34 according to the first embodiment of FIGS. 4 and 5. Specifically, the peripheral coating apparatus of the present embodiment is provided as a heating portion that heats the peripheral portion of the wafer W in a non-contact manner with the wafer W. More specifically, in the peripheral coating apparatus of the present embodiment, as shown in FIG. 14, a heating unit 200 having a hot air nozzle 201 for ejecting hot air, that is, a heated gas (hereinafter, heated gas) onto the wafer W is heated. It is provided as a part. Further, the heating unit 200 is provided with an exhaust nozzle 202, which will be described later.

As shown in FIG. 15, in the peripheral coating device 34, a rail 150B extending along the Y direction (left-right direction in FIG. 15) is formed on the X-direction negative direction (downward direction in FIG. 15) of the outer cup 130. ing. The rail 150B is formed, for example, from the substantially center of the outer cup 130 to the outside on the positive direction (right direction in FIG. 15) side in the Y direction.

A heating unit 200 is supported by a third arm 153 provided on the rail 150B. The third arm 153 is movable on the rail 150B by the heating unit drive unit 181. As a result, the heating unit 200 can move from the outside of the outer cup 130 to the upper side of the peripheral edge of the wafer W in the outer cup 130. Further, the third arm 153 can be raised and lowered by the heating unit drive unit 181 as a moving mechanism, and the height of the heating unit 200 can be adjusted.

Next, the heating unit 200 will be described with reference to FIGS. 16 to 18. 16 is a view showing the periphery of the wafer W during heating as viewed from above, and FIG. 17 is a diagram showing the periphery of the wafer W during heating as viewed from the positive side in the Y direction of FIG. FIG. 18 is a diagram showing a state in which the periphery of the wafer W during heating is viewed from the negative side in the X direction of FIG.

As shown in FIG. 16, the heating unit 200 is provided with a hot air nozzle 201 for ejecting hot air, and a plurality of exhaust nozzles 202 for exhausting are provided so as to surround the hot air nozzle 201. Specifically, one exhaust nozzle 202 is provided at a position on the positive side in the X direction, one at a position on the negative side in the X direction, and one at a position on the negative side in the Y direction with respect to the hot air nozzle 201. The hot air nozzle 201 and the exhaust nozzle 202 are provided with a circular outlet 201a and an exhaust port 202a, respectively.

The hot air nozzle 201 is connected to a hot air supply source (not shown) via a pipe (not shown). The hot air supply source includes, for example, a heating means for heating the gas, a fan for sending the heated gas, and the like, and is configured so that the heated gas can be ejected from the tip of the hot air nozzle 201.
The exhaust nozzle 202 is connected to an exhaust device (not shown) via a pipe (not shown).

Further, as shown in FIGS. 17 and 18, the exhaust nozzle 202 is formed so that its tip is located on the wafer W side from the tip of the hot air nozzle 201.

In the peripheral coating device 34 having such a heating unit 200, after the resist film is formed, the resist liquid supply nozzle 160 is moved from the inside to the outside standby portion of the outer cup 130 by the arm 151. At the same time, the heating unit 200 is moved above the peripheral edge of the wafer W in the outer cup 130 by the third arm 153. Then, while rotating the wafer W with the spin chuck 121 at a rotation speed of, for example, 10 rpm, the heated gas is ejected from the hot air nozzle 201 to the peripheral edge of the wafer W. As a result, the resist film formed on the peripheral edge of the wafer W can be heated. Further, when heating, the shape of the resist film can be maintained by heating slowly and evenly. The temperature and supply time of the heated gas from the hot air nozzle 201 can be arbitrarily set and are set for each chemical solution.

Further, the heated gas ejected to the wafer W is exhausted by the exhaust nozzle 202 provided around the hot air nozzle 201. Therefore, since only the peripheral portion of the wafer W is exposed to the heating gas, only the desired region R can be heated by the heating unit 200.

It should be noted that a plurality of exhaust nozzles 202 do not necessarily have to be provided, and at least one exhaust nozzle 202 may be provided on the downstream side of the hot air nozzle 201 in the rotation direction of the wafer W.
Further, a plurality of hot air nozzles 201 may be provided.

FIG. 19 is a diagram showing another example of the heating unit 200.
In the heating unit 200 shown in FIG. 15 and the like, the number of exhaust nozzles 202 is 3, and the shape of the exhaust port 202a of the exhaust nozzle 202 is circular.
On the other hand, in the heating unit 200 of the example of FIG. 19, the number of exhaust nozzles 202 is 1, and the shape of the exhaust port 202a of the exhaust nozzle 202 is crescent-shaped. The positional relationship between the exhaust nozzle 202 and the hot air nozzle 201 is such that the center of the hot air nozzle 201 is sandwiched between both ends of the "crescent" of the exhaust port 202a of the exhaust nozzle 202, and the hot air nozzle 201 is located inside the wafer W in the radial direction. Is.

Even with the heating unit 200 of this example, only the peripheral edge of the wafer W can be heated.
Further, in the above example, the hot air nozzle 201 is provided on the front surface side of the wafer W, but may be provided on the back surface side of the wafer W, or is provided on both the front surface side and the back surface side. May be good. The exhaust nozzle 202 may be provided at least on the front surface side and the back surface side of the wafer W on the side where the hot air nozzle 201 is provided, but may be provided on both the front surface side and the back surface side. ..

In the above, the heating unit that heats the peripheral edge of the wafer W without contacting the wafer W has heated the wafer W with the heating gas from the hot air nozzle 201, but this is the method of heating the wafer W without contact. The method is not limited, and for example, a method by light heating using a lamp heater, infrared rays, or the like may be used.

(Third Embodiment)
The configuration of the peripheral coating apparatus according to the third embodiment will be described with reference to FIG.
In the peripheral coating apparatus of the present embodiment, as shown in FIG. 20, a pre-wet liquid supply nozzle 210 for supplying the pre-wet liquid is provided on the fourth arm 154.
In the peripheral coating apparatus 34 of the present embodiment, the pre-wet liquid is supplied to the peripheral portion of the wafer W after the irradiation of ultraviolet rays from the irradiation nozzle 170 and before the resist liquid is applied to the peripheral portion of the wafer W. This makes it possible to form a more homogeneous resist film.
Such a pre-wet liquid supply nozzle 210 may be provided in a peripheral coating device that heats using a hot plate as in the first embodiment.

In any of the above embodiments, it is preferable that the peripheral coating apparatus is provided with a rinsing means for removing the resist film formed on the unnecessary portion of the wafer W by the peripheral coating apparatus.

The present invention is useful when applying a coating liquid on a substrate to form an annular coating film along the periphery of the substrate.

1 ... Substrate processing system 21 ... Cassette mounting plate 34 ... Peripheral coating device 120 ... Processing container 121 ... Spin chuck 122 ... Chuck drive unit 123 ... Elevating pin 124 ... Elevating drive unit 130 ... Outer cup 140 ... Inner cup 151-154 ... First to fourth arms 160 ... Resist liquid supply nozzle 161 ... Nozzle drive unit 170 ... Irradiation nozzle 171 ... Nozzle drive unit 172 ... Lens 173 ... Mirror 174 ... Another irradiation nozzle 180 ... First heating unit 181 ... Heating unit Drive unit 182 ... Hot plate 185 ... First exhaust passage 186 ... Second exhaust passage 187 ... Hole 190 ... Second heating unit 191 ... Heating unit Drive unit 182 ... Hot plate 200 ... Heating unit 201 ... Hot air nozzle 201a ... Ejection 202 ... Exhaust nozzle 202a ... Exhaust port 210 ... Pre-wet liquid supply nozzle 300 ... Control unit

Claims (7)

A board holding part that holds and rotates the board,
An irradiation part that irradiates the substrate with ultraviolet rays,
A coating liquid supply unit that supplies the coating liquid to the substrate is provided in the same housing.
Further, a control unit that controls the substrate holding unit, the irradiation unit, and the coating liquid supply unit, irradiates at least the peripheral edge of the surface of the substrate with ultraviolet rays, and then discharges the coating liquid to form an annular coating film on the substrate. equipped with a,
The irradiation unit has a member that irradiates ultraviolet rays from the center side of the substrate toward the outside of the substrate.
The peripheral coating device is characterized in that when the surface peripheral edge of the substrate is irradiated with ultraviolet rays, the angle with respect to the horizontal plane is smaller than the inclined surface on the front side of the bevel of the substrate . The peripheral coating apparatus according to claim 1 , wherein the irradiation unit includes another member that irradiates the bevel of the substrate with ultraviolet rays. A heating portion for heating the annular coating film formed on the substrate is provided in the housing .
The heating portion has a hot plate that contacts only the peripheral portion of the substrate.
Claims, characterized in further comprising Rukoto heating unit drive unit which allows moving the hot plate between the a position abutting only the peripheral portion of the substrate from the contact position and a position away outward in a top view Item 2. The peripheral coating apparatus according to Item 1 or 2 . A peripheral coating method in which a coating liquid is discharged onto a substrate to form an annular coating film along the peripheral edge of the substrate.
An irradiation step of irradiating at least the peripheral edge of the surface of the substrate with ultraviolet rays,
After UV irradiation, discharging the coating solution onto the peripheral portion of at least the surface of the substrate, seen including a coating step, the forming a coating film of said annular,
In the irradiation step, the angle with respect to the horizontal plane is smaller than the angle of the inclined surface on the front side of the bevel of the substrate, and the ultraviolet rays are applied to the surface peripheral edge of the substrate from the member that irradiates the ultraviolet rays from the center side of the substrate toward the outside of the substrate. Peripheral coating method characterized by irradiating . The peripheral coating method according to claim 4 , wherein the irradiation step includes a step of irradiating the bevel of the substrate with ultraviolet rays from a member different from the member. The heating unit for heating the peripheral portion of the substrate, seen including a heating step of heating the annular coating film formed on a substrate,
In the heating step, after raising the substrate on which the annular coating film is formed, the heating portion is moved with respect to the substrate from the outside of the substrate to a position where the peripheral portion of the substrate is heated. The peripheral coating method according to claim 4 or 5 , wherein the annular coating film is heated . A readable computer storage that stores a program that operates on the computer of the control unit that controls the peripheral coating device so that the peripheral coating method according to any one of claims 4 to 6 is executed by the peripheral coating device. Medium.

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