WO2011145611A1 - Imprinting system, imprinting method, and computer storage medium - Google Patents

Imprinting system, imprinting method, and computer storage medium Download PDF

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Publication number
WO2011145611A1
WO2011145611A1 PCT/JP2011/061305 JP2011061305W WO2011145611A1 WO 2011145611 A1 WO2011145611 A1 WO 2011145611A1 JP 2011061305 W JP2011061305 W JP 2011061305W WO 2011145611 A1 WO2011145611 A1 WO 2011145611A1
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WO
WIPO (PCT)
Prior art keywords
template
imprint
substrate
processing station
unit
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Application number
PCT/JP2011/061305
Other languages
French (fr)
Japanese (ja)
Inventor
正一 寺田
幸吉 広城
孝典 西
高広 北野
Original Assignee
東京エレクトロン株式会社
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Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2011145611A1 publication Critical patent/WO2011145611A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/58—Applying the releasing agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Definitions

  • the present invention relates to an imprint system for forming a predetermined resist pattern on a substrate using a template having a transfer pattern formed on the surface, an imprint method using the imprint system, and a computer storage medium.
  • a semiconductor wafer (hereinafter referred to as “wafer”) is subjected to a photolithography process to form a predetermined resist pattern on the wafer. Then, using the resist pattern as a mask, an etching process is performed on the film to be processed on the wafer, and then a resist film removing process or the like is performed to form a predetermined pattern of the film to be processed.
  • the resist pattern When forming the above-described resist pattern, the resist pattern is required to be miniaturized in order to further increase the integration of the semiconductor device.
  • the limit of miniaturization in the photolithography process is about the wavelength of light used for the exposure process. For this reason, it has been advancing to shorten the wavelength of exposure light.
  • the wavelength of the exposure light source there are technical and cost limitations to shortening the wavelength of the exposure light source, and it is difficult to form a fine resist pattern on the order of several nanometers, for example, only by the method of advancing the light wavelength. is there.
  • a template having a fine pattern on the surface (sometimes referred to as a mold or a mold) is pressed onto the surface of a resist film formed on a wafer, then peeled off, and directly patterned on the surface of the resist film. Transfer is performed (Patent Document 1).
  • the processing time required for each wafer differs between the process of forming another resist film and the imprint process.
  • the other resist film is formed, for example, by applying a coating solution on a wafer and baking the coating solution.
  • the processing time required for one wafer is short, and in the current apparatus, for example, another resist film can be formed on 200 wafers per hour.
  • the imprint process after a resist film is formed on the wafer, the template pattern is transferred to the resist film a plurality of times, for example, 100 times. For this reason, the processing time required for one wafer is long, and the current apparatus has a limit of performing imprint processing on, for example, 20 wafers per hour.
  • the present invention has been made in view of such a point, and an object thereof is to form a predetermined resist pattern on a substrate appropriately and efficiently using a template.
  • the present invention provides an imprint system for forming a predetermined resist pattern on a substrate using a template having a transfer pattern formed on the surface, wherein the first resist film is formed on the substrate. And a second resist film formed on the substrate on which the first resist film is formed, and the transfer pattern is transferred to the second resist film to form the second resist film.
  • a plurality of imprint units for forming a predetermined resist pattern are arranged on the substrate, an imprint processing station connected to the substrate processing station, and a substrate loading / unloading substrate connected to the substrate processing station for loading / unloading the substrate into / from the substrate processing station. Station and the imprint processing station connected to the imprint processing station.
  • a template loading / unloading station for loading / unloading the template to / from the imprint processing station, and the imprint processing station conveys the template to the respective imprint units.
  • a transport unit including a template transport arm;
  • the imprint processing station forms a second resist film and a predetermined resist pattern (hereinafter sometimes referred to as “imprint processing”).
  • imprint processing a predetermined resist pattern
  • a plurality of imprint units to be performed are arranged. Therefore, the first resist film can be formed on the plurality of substrates at the substrate processing station, and the plurality of substrates on which the first resist film is formed can be continuously transferred from the substrate processing station to the imprint processing station.
  • the template loading / unloading station is connected to the imprint processing station, a plurality of templates can be continuously conveyed from the template loading / unloading station to the imprint processing station.
  • the substrate and the template are transported to the imprint unit by one transport unit, the substrate and the template can be transported efficiently.
  • imprint processing for each substrate using each template can be performed in parallel in each imprint unit. For this reason, even when the processing time in the substrate processing station and the processing time in the imprint unit are different, the substrate can be processed properly continuously without stopping the processing of the substrate in the substrate processing station. Therefore, a predetermined resist pattern can be appropriately and efficiently formed on the substrate.
  • the present invention provides an imprint method for forming a predetermined resist pattern on a substrate using a template having a transfer pattern formed on a surface thereof in the imprint system, wherein the imprint system includes a substrate.
  • a substrate processing station for forming a first resist film thereon, a second resist film is formed on the substrate on which the first resist film is formed, and the transfer pattern is transferred to the second resist film.
  • a substrate transfer station including a template transfer arm, and the substrate processing station.
  • An imprint processing station connected to the substrate processing station, a substrate loading / unloading station connected to the substrate processing station for loading / unloading the substrate, and a template connected to the imprint processing station.
  • a template loading / unloading station for loading / unloading a first resist film on a plurality of substrates at the substrate processing station, and using the transfer unit, the substrate processing station to the imprint processing station.
  • the plurality of substrates on which the first resist film is formed are continuously transferred, and a plurality of templates are continuously transferred from the template loading / unloading station to the imprint processing station. Forming said predetermined resist pattern for each substrate using the template is performed in parallel with each imprint unit.
  • a readable computer storage storing a program that operates on a computer of a control unit that controls the imprint system.
  • a medium is provided.
  • a predetermined resist pattern can be appropriately and efficiently formed on a substrate using a template.
  • a state in which the resist film is photopolymerized is shown, (h) shows a state in which a resist pattern is formed on the wafer, and (i) shows a state in which the remaining film on the wafer is removed.
  • FIG. 1 is a plan view showing an outline of a configuration of an imprint system 1 according to the present embodiment.
  • 2 and 3 are side views illustrating the outline of the configuration of the imprint system 1.
  • a template T having a rectangular parallelepiped shape and having a predetermined transfer pattern C formed on the surface is used as shown in FIG.
  • the transfer pattern C means the side of the template T which is formed with the surface T 1, the surface T 1 opposite to the surface of the backside T 2.
  • the release agent S along the shape of the transfer pattern C as shown in FIG. 5 is deposited.
  • a transparent material that can transmit visible light, near ultraviolet light, ultraviolet light, or the like, such as glass is used.
  • a material having liquid repellency with respect to a second resist film on the wafer which will be described later, for example, a fluororesin is used.
  • the imprint system 1 carries in and out a plurality of, for example, 25 wafers W as a substrate between the outside and the imprint system 1 in a cassette unit, or the wafer W with respect to the wafer cassette CW.
  • a wafer loading / unloading station 2 as a substrate loading / unloading station
  • a wafer processing station 3 as a substrate processing station including a plurality of processing units for performing predetermined processing on the wafer W
  • a template T for performing predetermined processing on the wafer W
  • An imprint processing station 4 having a plurality of imprint units for forming a predetermined resist pattern on W, and a plurality of, for example, five templates T, are carried in and out of the imprint system 1 between the outside and the imprint system 1 in a cassette unit.
  • a plate unloading station 5 has a configuration in which are integrally connected.
  • the wafer carry-in / out station 2, the wafer processing station 3, the imprint processing station 4, and the template carry-in / out station 5 are arranged in this order in the Y direction (left-right direction in FIG. 1).
  • the wafer loading / unloading station 2 is provided with a cassette mounting table 10.
  • the cassette mounting table 10 can mount a plurality of wafer cassettes CW in a row in the X direction (vertical direction in FIG. 1). That is, the wafer carry-in / out station 2 is configured to be capable of holding a plurality of wafers W.
  • a film to be processed (not shown) to be etched is formed in advance on the wafer W in the wafer cassette CW .
  • the wafer carry-in / out station 2 is provided with a wafer carrier 12 that can move on a conveyance path 11 extending in the X direction.
  • the wafer transfer body 12 can be expanded and contracted in the horizontal direction and can also move in the vertical direction and the vertical direction ( ⁇ direction), and can transfer the wafer W between the wafer cassette CW and the wafer processing station 3.
  • the wafer processing station 3 is provided with a transfer unit 20 at the center thereof.
  • a transfer unit 20 at the center thereof.
  • four processing blocks G1 to G4 in which various processing units are arranged in multiple stages are arranged.
  • the first processing block G1 and the second processing block G2 are sequentially arranged from the wafer carry-in / out station 2 side.
  • a third processing block G3 and a fourth processing block G4 are arranged in this order from the wafer carry-in / out station 2 side on the back side of the processing station 3 (the positive side in the X direction in FIG. 1).
  • a transition unit 21 for transferring the wafer W is disposed on the wafer carry-in / out station 2 side of the wafer processing station 3.
  • a transition unit 22 for delivering the wafer W and a buffer cassette 23 for temporarily storing the wafer W are arranged on the imprint processing station 4 side of the wafer processing station 3.
  • the transfer unit 20 has a transfer arm that holds and transfers the wafer W and is movable in the horizontal direction, the vertical direction, and the vertical direction.
  • the transfer unit 20 can transfer the wafer W to various processing units, transition units 21 and 22, and a buffer cassette 23, which will be described later, arranged in the processing blocks G1 to G4.
  • the first processing block G1 includes a plurality of liquid processing units, for example, resist coating units 30, 31 as coating units for coating a first resist liquid as a coating liquid on the wafer W. Are stacked in two stages. Similarly, in the second processing block G2, resist coating units 32 and 33 are stacked in two stages in order from the bottom. In addition, chemical chambers 34 and 35 for supplying various processing liquids to the liquid processing unit are provided at the lowermost stages of the first processing block G1 and the second processing block G2, respectively.
  • liquid processing units for example, resist coating units 30, 31 as coating units for coating a first resist liquid as a coating liquid on the wafer W.
  • resist coating units 32 and 33 are stacked in two stages in order from the bottom.
  • chemical chambers 34 and 35 for supplying various processing liquids to the liquid processing unit are provided at the lowermost stages of the first processing block G1 and the second processing block G2, respectively.
  • temperature adjusting units 40 and 41 for adjusting the temperature of the wafer W and heating units 42 and 43 for heating the wafer W are stacked in four stages in order from the bottom. Yes.
  • temperature control units 50 and 51 and heating units 52 and 53 for heating the wafer W are sequentially stacked in four stages from the bottom.
  • the imprint processing station 4 two rows of imprint blocks E1 and E2 are arranged as shown in FIG.
  • the first imprint block E1 is disposed on the front side of the imprint processing station 4 (X direction negative direction side in FIG. 1), and the second imprint block E2 is on the back side of the imprint processing station 4 (in FIG. 1). (X direction positive direction side).
  • a transfer area E3 for transferring the wafer W and the template T is formed between the two rows of imprint blocks E1 and E2.
  • the first imprint block E1 a plurality of, for example, five imprint units 60 are arranged in the Y direction. Further, a transition unit 61 that transfers the wafer W and the template T is disposed on the transfer area side E3 of each imprint unit 60.
  • a plurality of, for example, five imprint units 60 and transition units 61 are also arranged in the Y direction in the second imprint block E2.
  • the number of imprint units 60 is set based on the processing time in the wafer processing station 3 and the processing time of the imprint unit 60. That is, the wafer processing station 3 can perform wafer processing on, for example, 200 wafers W per hour. On the other hand, in the imprint unit 60, for example, imprint processing is performed on 20 wafers W per hour. Therefore, in the present embodiment, ten imprint units 60 are provided in the imprint processing station 4.
  • a transfer unit 70 that holds and transfers the wafer W and the template T is provided.
  • the transport unit 70 is configured to be movable on a transport path 71 extending in the transport direction E3 in the Y direction. Further, as will be described later, the transport unit 70 can be expanded and contracted in the horizontal direction, and is also movable in the vertical direction and the vertical direction ( ⁇ direction).
  • the transfer unit 70 can transfer the wafer W between the wafer processing station 3 and the transition unit 61 and can transfer the template T between the template carry-in / out station 5 and the transition unit 61.
  • the template loading / unloading station 5 is provided with a cassette mounting table 80.
  • the cassette mounting table 80 can mount a plurality of template cassettes CT in a line in the X direction (vertical direction in FIG. 1). That is, the template carry-in / out station 5 is configured to be able to hold a plurality of templates T.
  • the template carry-in / out station 5 is provided with a template carrier 82 that can move on a conveyance path 81 extending in the X direction.
  • Template carrier 82 is stretchable in the horizontal direction and the vertical is also movable in the direction and the vertical around (theta direction), the template with the transition unit 90 or a buffer cassette 91 to be described later as a template cassette C T T can be conveyed.
  • the template loading / unloading station 5 is provided with a transition unit 90 for transferring the template T to and from the imprint processing station 4 and a buffer cassette 91 for temporarily storing the template T.
  • a transition unit 90 for transferring the template T to and from the imprint processing station 4
  • a buffer cassette 91 for temporarily storing the template T.
  • the resist coating unit 30 has a casing 100 in which a loading / unloading port (not shown) for the wafer W is formed on the side surface.
  • a spin chuck 110 that holds and rotates the wafer is provided at the center of the casing 100.
  • the spin chuck 110 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the wafer W is provided on the upper surface. By suction from the suction port, the wafer W can be sucked and held on the spin chuck 110.
  • the spin chuck 110 is provided with a rotation drive unit 112 via a shaft 111. By this rotation driving unit 112, the spin chuck 110 can rotate at a predetermined speed around the vertical and can move up and down.
  • a cup 113 that receives and collects the liquid scattered or dropped from the wafer W.
  • a discharge pipe 114 for discharging the collected liquid
  • an exhaust pipe 115 for exhausting the atmosphere in the cup 113.
  • a rail 120 extending along the Y direction is formed on the negative side of the cup 113 in the X direction (downward direction in FIG. 7).
  • the rail 120 is formed, for example, from the outside of the cup 113 in the Y direction negative direction (left direction in FIG. 7) to the outside in the Y direction positive direction (right direction in FIG. 7).
  • An arm 121 is attached to the rail 120.
  • the arm 121 supports a resist solution nozzle 122 that supplies the first resist solution onto the wafer W.
  • the arm 121 is movable on the rail 120 by a nozzle driving unit 123.
  • the resist solution nozzle 122 can move from the standby part 124 installed outside the cup 113 on the positive side in the Y direction to above the center of the wafer W in the cup 113, and further on the wafer W. It can move in the radial direction.
  • the arm 121 can be moved up and down by a nozzle driving unit 123 and the height of the resist solution nozzle 122 can be adjusted.
  • a resist solution containing carbon is used as the first resist solution as the coating solution.
  • a coating solution for forming an SOG (Spin On Glass) film may be used as a coating solution.
  • the configuration of the resist coating units 31 to 33 is the same as the configuration of the resist coating unit 30 described above, and a description thereof will be omitted.
  • the heating unit 42 has a casing 130 in which a loading / unloading port (not shown) for the wafer W is formed on the side surface.
  • a mounting table 131 on which the wafer W is mounted is provided on the bottom surface of the casing 130.
  • the wafer W is mounted on the upper surface of the mounting table 131 so that the surface to be processed faces upward.
  • elevating pins 132 for supporting the wafer W from below and elevating it are provided in the mounting table 131.
  • the elevating pin 132 can be moved up and down by the elevating drive unit 133.
  • a through hole 134 that penetrates the upper surface in the thickness direction is formed on the upper surface of the mounting table 131, and the elevating pins 132 are inserted through the through holes 134.
  • a hot plate 135 for heating the wafer W is provided on the upper surface of the mounting table 131.
  • a heater that generates heat by power feeding is provided inside the hot plate 135, and the hot plate 135 can be adjusted to a predetermined set temperature.
  • the hot plate 135 may be provided above the wafer W, for example, on the ceiling surface of the lid 140 described later. Further, hot plates 135 may be provided above and below the wafer W.
  • a lid 140 that is movable up and down is provided above the mounting table 131.
  • the lid 140 has an open bottom surface and forms a processing chamber K together with the mounting table 131.
  • An exhaust part 141 is provided at the center of the upper surface of the lid 140. The atmosphere in the processing chamber K is uniformly exhausted from the exhaust unit 141.
  • the temperature control units 40, 41, 50 and 51 have the same configuration as the heating unit 42 described above, and a temperature control plate is used instead of the heat plate 135.
  • a cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature.
  • the lid 140 in the heating unit 42 may be omitted.
  • the imprint unit 60 has a casing 150 having a wafer W loading / unloading port (not shown) and a template T loading / unloading port (not shown) formed on the side surfaces.
  • a wafer holder 151 on which the wafer W is placed and held is provided on the bottom surface of the casing 150.
  • the wafer W is placed on the upper surface of the wafer holder 151 so that the surface to be processed faces upward.
  • raising / lowering pins 152 for supporting the wafer W from below and raising / lowering it are provided in the wafer holding part 151.
  • the elevating pin 152 can be moved up and down by the elevating drive unit 153.
  • a through hole 154 that penetrates the upper surface in the thickness direction is formed on the upper surface of the wafer holding portion 151, and the lifting pins 152 are inserted through the through holes 154.
  • the wafer holding unit 151 can be moved in the horizontal direction and can be rotated around the vertical by a moving mechanism 155 provided below the wafer holding unit 151.
  • a rail 160 extending along the Y direction is provided on the negative side in the X direction (downward direction in FIG. 10) of the wafer holding unit 151.
  • the rail 160 is formed, for example, from the outside of the wafer holding portion 151 on the Y direction negative direction (left direction in FIG. 10) to the outside on the Y direction positive direction (right direction in FIG. 10).
  • An arm 161 is attached to the rail 160.
  • a resist solution nozzle 162 that supplies a second resist solution onto the wafer W is supported on the arm 161.
  • the resist solution nozzle 162 has, for example, an elongated shape along the X direction that is the same as or longer than the diameter dimension of the wafer W.
  • an inkjet type nozzle is used as the resist solution nozzle 162, and a plurality of supply ports (not shown) formed in a line along the longitudinal direction are formed below the resist solution nozzle 162.
  • the resist solution nozzle 162 can strictly control the supply timing of the second resist solution, the supply amount of the second resist solution, and the like.
  • the arm 161 is movable on the rail 160 by the nozzle driving unit 163.
  • the resist solution nozzle 162 can move from the standby unit 164 installed outside the wafer holding unit 151 on the Y direction positive direction side to above the wafer W on the wafer holding unit 151, and the surface of the wafer W The top can be moved in the radial direction of the wafer W.
  • the arm 161 can be moved up and down by a nozzle driving unit 163, and the height of the resist solution nozzle 162 can be adjusted.
  • a template holding unit 170 that holds the template T as shown in FIG. 9 is provided on the ceiling surface in the casing 150 and above the wafer holding unit 151. That is, the wafer holding unit 151 and the template holding unit 170 are arranged so that the wafer W placed on the wafer holding unit 151 and the template T held on the template holding unit 170 face each other. Furthermore, the template holding portion 170 has a chuck 171 for holding adsorb outer peripheral portion of the rear surface T 2 of the template T. The chuck 171 is movable in the vertical direction and rotatable about the vertical by a moving mechanism 172 provided above the chuck 171. As a result, the template T can be raised and lowered by rotating in a predetermined direction with respect to the wafer W on the wafer holder 151.
  • the template holding unit 170 has a light source 173 provided above the template T held by the chuck 171.
  • the light source 173 emits light such as visible light, near ultraviolet light, and ultraviolet light, and the light from the light source 173 passes through the template T and is irradiated downward.
  • a wafer transfer mechanism (not shown) that transfers the wafer W to / from the transition unit 61 and a template transfer mechanism (not shown) that transfers the template T to / from the transition unit 61. ) And are provided.
  • the template transport mechanism is configured to be rotatable so as to invert the front and back surfaces of the template T.
  • the transfer unit 70 has a plurality of, for example, two wafer transfer arms 180 as substrate transfer arms that hold and transfer the wafer W. Further, the transport unit 70 has a plurality of, for example, two template transport arms 181 that hold and transport the template T.
  • the two template transfer arms 181 are provided above the two wafer transfer arms 180.
  • the vertical relationship between the two template transfer arms 181 and the two wafer transfer arms 180 is not limited to this embodiment, and the two wafer transfer arms 180 are arranged above the two template transfer arms 181. May be.
  • the two template transfer arms 181 are arranged above the two wafer transfer arms 180 as in the present embodiment. Is preferred.
  • the wafer transfer arm 180 is formed integrally with the arm portion 182 having an approximately 3/4 annular shape having a diameter larger than the diameter of the wafer W, and the arm portion 182. And a support portion 183 for supporting the.
  • the arm portion 182 is provided with, for example, four holding portions 184 that protrude inward and hold the wafer W.
  • the wafer transfer arm 180 can hold the wafer W horizontally on the holding unit 184.
  • the template transfer arm 181 is also formed integrally with the arm portion 185 having an approximately 3/4 annular shape having a larger diameter than the template T, and the arm portion 185. And a support portion 186 for supporting the.
  • the arm portion 185 is provided with holding portions 187 that protrude inward and hold corner portions of the template T, for example, at four locations.
  • the template carrying arm 181 can hold the template T horizontally on the holding unit 187.
  • an arm driving unit 190 is provided as shown in FIG.
  • each wafer transfer arm 180 and each template transfer arm 181 can move independently in the horizontal direction.
  • the wafer transfer arm 180, the template transfer arm 181, and the arm driving unit 190 are supported on the base 191.
  • a rotation drive unit 193 is provided on the lower surface of the base 191 via a shaft 192.
  • the rotation driving unit 193 is attached to the transport path 71 described above, and the transport unit 70 can move on the transport path 71.
  • the imprint system 1 described above is provided with a control unit 200 as shown in FIG.
  • the control unit 200 is a computer, for example, and has a program storage unit (not shown).
  • the program storage unit stores a program for executing wafer processing, imprint processing, and the like in the imprint system 1.
  • This program is recorded in a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), memory card, or the like. Or installed in the control unit 200 from the storage medium.
  • the imprint system 1 is configured as described above. Next, wafer processing, imprint processing, and the like performed in the imprint system 1 will be described.
  • FIG. 13 shows the main processing flow of this wafer processing and imprint processing
  • FIG. 14 shows the state of the wafer W and template T in each step.
  • the template T is taken from the template cassette C T on the cassette mounting table 80, it is transported to the transit unit 90.
  • the template T in the template cassette C T is the surface T 1 of the transfer pattern C is formed is accommodated to face upward.
  • the template T is transported to the transition unit 61 by the transport unit 70.
  • the template T is transported into the imprint unit 60 by the template transport mechanism in the imprint unit 60 (step A1 in FIG. 13).
  • the front and back surfaces of the template T are reversed by the template transport mechanism. That is, the rear surface T 2 of the template T is directed upwards.
  • the template T carried into the imprint unit 60 is sucked and held by the chuck 171 of the template holding unit 170.
  • a plurality of templates T are continuously conveyed from the template loading / unloading station 5 to the imprint processing station 4.
  • the wafer W is taken out from the template cassette CW on the cassette mounting table 10 by the wafer transfer body 12 at the wafer loading / unloading station 2.
  • the wafer is transferred to the transition unit 21 of the wafer processing station 3 (step A2 in FIG. 13).
  • the wafer W in the wafer cassette CW is accommodated so that the surface to be processed faces upward.
  • the wafer W is transferred to the resist coating unit 30 by the transfer unit 20 and delivered to the spin chuck 110.
  • the resist solution nozzle 122 is moved to above the center of the wafer W and the wafer W is rotated.
  • the first resist solution is supplied onto the rotating wafer W, the first resist solution is diffused on the wafer W by centrifugal force, and the first resist solution is applied to the entire surface of the wafer W ( Step A3) in FIG.
  • the wafer W is transferred to the heating unit 42 by the transfer unit 20.
  • the wafer W carried into the heating unit 42 is transferred to the lift pins 132 and placed on the placement table 131.
  • the lid 140 is closed, and the wafer W is heated to, for example, 200 ° C. by the hot plate 135.
  • the first resist film R 1 is formed on the wafer W as shown in FIG. 14 (a) (step A4 in FIG. 13).
  • the first resist film R 1 is formed by, for example, 10nm thickness of.
  • the wafer W is transferred to the temperature adjustment unit 40 by the transfer unit 20, and the wafer W is adjusted to a predetermined temperature, for example, room temperature.
  • the wafer W is transferred to the transition unit 22 by the transfer unit 20.
  • the wafer W is transferred to the imprint processing station 4 by the transfer unit 70.
  • the first resist film R 1 is formed on a plurality of wafers W, a plurality of wafers W are transported continuously to the imprinting station 4.
  • the buffer cassette 23 the wafer W in which the first resist film R 1 is formed may be temporarily stored.
  • the wafer W is transferred to the transition unit 61 by the transfer unit 70. Subsequently, the wafer W is transferred into the imprint unit 60 by the wafer transfer mechanism in the imprint unit 60 (step A5 in FIG. 13).
  • the wafer W carried into the imprint unit 60 is transferred to the lift pins 152 and is placed and held on the wafer holding unit 151. Subsequently, after the wafer W held by the wafer holder 151 is moved to a predetermined position in the horizontal direction and aligned, the resist solution nozzle 162 is moved in the radial direction of the wafer W, and FIG. As shown, a second resist solution is applied onto the wafer W to form a second resist film R2 (step A6 in FIG. 14). At this time, the control unit 200 controls the supply timing, supply amount, and the like of the second resist solution supplied from the resist solution nozzle 162.
  • the amount of the second resist solution applied to the portion corresponding to the convex portion (the portion corresponding to the concave portion in the transfer pattern C of the template T) is large and corresponds to the concave portion.
  • the amount of the second resist solution applied to the portion to be applied (the portion corresponding to the convex portion in the transfer pattern C) is controlled to be small. In this way, the second resist solution is applied onto the wafer W in accordance with the aperture ratio of the transfer pattern C.
  • the second resist film R 2 is formed by, for example, 50nm thickness of.
  • the template holding portion 170 The made template T is rotated in a predetermined direction. Then, the template T is lowered to the wafer W side as shown by the arrow in FIG. Template T is lowered to a predetermined position, the surface T 1 of the template T is pressed against the resist film R 2 of the second on the wafer W. The predetermined position is set based on the height of the resist pattern formed on the wafer W. Subsequently, light is emitted from the light source 173.
  • the template T is raised to form a resist pattern P on the wafer W.
  • the wafer W is transferred to the wafer transfer mechanism by the lift pins 152, transferred from the imprint unit 60, and transferred to the transition unit 61 (step A8 in FIG. 13).
  • the wafer W is transferred to the wafer processing station 3 by the transfer unit 70 and then returned to the wafer cassette CW by the wafer transfer body 12.
  • a thin resist residual film L may remain in the concave portion of the resist pattern P formed on the wafer W.
  • the residual film L remains outside the imprint system 1.
  • the film L may be removed.
  • steps A5 to A8 are repeated, and the resist pattern P is formed on each of the plurality of wafers W by using one template T. Then, when steps A5 to A8 are performed on a predetermined number of wafers W, the template T is replaced. That is, after the front and back surfaces of the template T are reversed by the template transport mechanism, the template T is transported from the imprint unit 60 and transported to the transition unit 61 (step A9 in FIG. 13). Thereafter, the template T, after being transported to the transit unit 90 by the transport unit 70, and returned to the template cassette C T by the template carrier 82.
  • the timing for exchanging the template T is set in consideration of the deterioration of the template T and the like.
  • the template T is also replaced when a different pattern P is formed on the wafer W.
  • the template T may be exchanged every time the template T is used once. Further, for example, the template T may be exchanged for each wafer W, or the template T may be exchanged for each lot, for example.
  • the predetermined resist pattern P is continuously formed on the plurality of wafers W while the template T is continuously replaced.
  • the imprint system 1 first the resist film R 1 on the wafer W as shown in FIG. 14 (e), the second resist pattern P of the resist film R 2 It is formed. Thereafter the imprint system 1 external etching unit (not shown), a second resist pattern P of the resist film R 2 as a mask, a resist pattern of the first resist film R 1 is etched Form. Then, these first resist film R 1 of the resist pattern and second resist pattern P of the resist film R 2 exerts sufficient etching resistant work together. Therefore, it is possible to appropriately form the pattern of the film to be processed by appropriately etching the film to be processed on the wafer W.
  • a plurality of imprint units 60 are arranged in the imprint processing station 4 with respect to one wafer processing station 3. Therefore, the wafer processing station 3 in the first on a plurality of wafers W of the resist film R 1 is formed from the wafer processing station 3 in the imprint processing station 4 the first resist film R 1 is more formed The wafer W can be continuously transferred. Further, since the template loading / unloading station 5 is connected to the imprint processing station 3, a plurality of templates T can be continuously transferred from the template loading / unloading station 5 to the imprint processing station 4. In the imprint processing station 4, an imprint process for each wafer W using each template T can be performed in parallel in each imprint unit 60.
  • the wafer W can be appropriately processed continuously without stopping the wafer processing in the wafer processing station 3. Therefore, the predetermined resist pattern P can be appropriately and efficiently formed on the wafer W. This also enables mass production of semiconductor devices.
  • the wafer W and the template T are transferred to the imprint unit 60 by the single transfer unit 70, so that the wafer W and the template T can be transferred efficiently. Furthermore, since the transfer unit 70 includes the two wafer transfer arms 180 and the two template transfer arms 181, the wafer W or the template T can be transferred into and out of the transition units 22, 61, and 90 simultaneously. it can. Therefore, the transfer of the wafer W and the template T at the imprint processing station 4 can be performed more efficiently.
  • the first resist solution on the wafer W is baked in the heating unit 42. Therefore, it is possible to appropriately form a first resist film R 1 on the wafer W.
  • a shielding plate 210 may be provided between the two wafer W transfer arms 180 and the two template transfer arms 181 as shown in FIG.
  • the shielding plate 210 is formed larger than at least the wafer transfer arm 180. In such a case, even when particles or the like adhere to the template transfer arm 181, the particles can be prevented from reattaching to the wafer transfer arm 180. Therefore, the wafer W can be appropriately transferred.
  • the template transport arm 181 of the transport unit 70 may be configured to be rotatable by the arm driving unit 190.
  • the holding portion 187 of the template transport arm 181 is provided with a suction pad (not shown) for sucking and holding the template T.
  • the front and back surfaces of the template T can be reversed by the template transport arm 181.
  • inversion of the front and back surfaces of the template T by the template transport mechanism in the imprint unit 60 can be omitted.
  • a template process in which a predetermined process is performed on the template T between the template carry-in / out station 5 and the imprint processing station 4 as shown in FIG. Station 300 may be arranged.
  • the transition unit 90 and the buffer cassette 91 provided in the wafer carry-in / out station 5 are omitted, and the functions of these units are performed by the template processing station 300 as described later.
  • the template processing station 300 is provided with a transport unit 310 at the center thereof.
  • a transport unit 310 for example, six processing blocks F1 to F6 in which various processing units are arranged in multiple stages are arranged.
  • the first processing block F1 and the second processing block F2 are sequentially arranged from the template loading / unloading station 5 side.
  • a third processing block F3 is disposed on the template loading / unloading station 5 side of the template processing station 300, and a fourth processing block F4 and a buffer cassette 311 are disposed on the imprint processing station 4 side of the template processing station 300.
  • a fourth processing block F4 and a buffer cassette 311 are disposed on the imprint processing station 4 side of the template processing station 300.
  • a fifth processing block F5 and a sixth processing block F6 are arranged in this order from the template loading / unloading station 5 side on the back side of the template processing station 300 (X direction positive direction side in FIG. 16).
  • the transport unit 310 can transport the template T to various processing units and buffer cassettes 311 described later disposed in the processing blocks F1 to F6.
  • the processing blocks F1 to F4 constitute a release agent processing block
  • the processing blocks F5 and F6 constitute a template cleaning block.
  • a plurality of liquid processing units for example, a release agent application unit 320 for applying the release agent S to the template T, and the release agent S on the template T are rinsed.
  • Rinse units 321 are stacked in two stages in order from the bottom.
  • the release agent coating unit 322 and the rinse unit 323 are stacked in two stages from the bottom.
  • chemical chambers 324 and 325 for supplying various processing liquids to the liquid processing unit are respectively provided in the lowermost stages of the first processing block F1 and the second processing block F2.
  • the third to the processing block F3, ultraviolet rays are irradiated to the template T as shown in FIG. 18, the pre-cleaning unit for cleaning prior to the surface T 1 that the release agent S on the template T is deposited 330
  • the temperature adjusting units 331 and 332 for adjusting the temperature of the template T, the transition unit 333 for transferring the template T, and the heating units 334 and 335 for heating the template T are stacked in six steps from the bottom.
  • the preprocessing unit 340, the temperature control units 341 and 342, the transition unit 343, and the heating units 344 and 345 are also stacked in the fourth processing block F4 in order from the bottom in six stages. Yes.
  • the fifth processing block F5 the inspection unit 352 for inspecting the cleaning unit 350 and 351, the surface T 1 of the template T after washing after cleaning the surface T 1 of the template T after use, as shown in FIG. 19 Three layers are stacked in order from the bottom.
  • post-cleaning units 360 and 361 and an inspection unit 362 are stacked in three stages in order from the bottom.
  • post-cleaning unit 350,351,360,361 may be the rear surface T 2 also further washed template T
  • the inspection unit 352, 362 may be further examined also the rear surface T 2 of the template T.
  • the release agent coating unit 320 has a casing 370 in which a loading / unloading port (not shown) for the template T is formed on the side surface.
  • a holding member 371 that holds and rotates the template T is provided at the center of the casing 370.
  • a central portion of the holding member 371 is recessed downward, and an accommodating portion 372 for accommodating the template T is formed.
  • a groove portion 372 a smaller than the outer shape of the template T is formed in the lower portion of the housing portion 372. Therefore, in the accommodating part 372, the inner peripheral part of the lower surface of the template T is not in contact with the holding member 371 by the groove part 372a, and only the outer peripheral part of the lower surface of the template T is supported by the holding member 371.
  • the accommodating portion 372 has a substantially rectangular planar shape that conforms to the outer shape of the template T.
  • a plurality of projecting portions 373 projecting inward from the side surfaces are formed in the housing portion 372, and the template T housed in the housing portion 372 is positioned by the projecting portions 373. Further, when the template T is transferred from the transfer arm of the transfer unit 310 to the storage unit 372, there are four notches 374 on the outer periphery of the storage unit 372 in order to avoid the transfer arm from interfering with the storage unit 372. It is formed in the place.
  • the holding member 371 is attached to the cover body 375 as shown in FIG. 20, and a rotation driving unit 377 is provided below the holding member 371 via a shaft 376.
  • the rotation drive unit 377 By this rotation drive unit 377, the holding member 371 can rotate around the vertical at a predetermined speed and can move up and down.
  • a cup 380 that receives and collects the release agent S scattered or dropped from the template T.
  • a discharge pipe 381 for discharging the collected release agent S and an exhaust pipe 382 for exhausting the atmosphere in the cup 380 are connected to the lower surface of the cup 380.
  • a rail 390 extending along the Y direction is formed on the side of the cup 380 in the negative X direction (downward direction in FIG. 22).
  • the rail 390 is formed, for example, from the outside of the cup 380 on the Y direction negative direction (left direction in FIG. 22) to the outside on the Y direction positive direction (right direction in FIG. 22).
  • An arm 391 is attached to the rail 390.
  • a release agent nozzle 392 that supplies the release agent S onto the template T is supported on the arm 391.
  • the arm 391 is movable on the rail 390 by a nozzle driving unit 393.
  • the release agent nozzle 392 can move from the standby portion 394 installed on the outer side of the cup 380 on the positive side in the Y direction to above the center portion of the template T in the cup 380.
  • the arm 391 can be moved up and down by a nozzle driving unit 393, and the height of the release agent nozzle 392 can be adjusted.
  • a cleaning liquid nozzle that injects a cleaning liquid, for example, an organic solvent, may be provided in the groove 372 a of the holding member 371.
  • a cleaning liquid for example, an organic solvent
  • the configuration of the release agent application unit 322 is the same as the configuration of the release agent application unit 320 described above, and thus the description thereof is omitted.
  • the rinse unit 321 has a casing 400 in which a loading / unloading port (not shown) for the template T is formed on the side surface.
  • An immersion tank 401 in which the template T is immersed is provided on the bottom surface of the casing 400.
  • an organic solvent for rinsing the release agent S on the template T is stored.
  • a holding part 402 that holds the template T is provided on the ceiling surface in the casing 400 and above the immersion tank 401.
  • Holding portion 402 the outer peripheral portion of the rear surface T 2 of the template T has a chuck 403 for holding suction.
  • Template T has a surface T 1 is held on the chuck 403 to face upward.
  • the chuck 403 can be moved up and down by a lifting mechanism 404.
  • the template T is immersed in the organic solvent stored in the immersion tank 401 in the state hold
  • the holding unit 402 includes a gas supply unit 405 provided above the template T held by the chuck 403.
  • the gas supply unit 405 can spray an inert gas such as nitrogen or a gas gas such as dry air downward, that is, on the surface T 1 of the template T held by the chuck 403.
  • the rinse unit 321 is connected to an exhaust pipe (not shown) that exhausts the internal atmosphere.
  • the configuration of the rinse unit 323 is the same as the configuration of the rinse unit 321 described above, and a description thereof will be omitted.
  • the pre-cleaning unit 330 has a casing 410 having a side surface (not shown) for carrying in / out of the template T.
  • a chuck 411 that holds the template T by suction is provided in the casing 410.
  • a chuck drive unit 412 is provided below the chuck 411.
  • the chuck driving unit 412 is provided on the bottom surface in the casing 410 and is mounted on a rail 413 extending along the Y direction. The chuck 411 can be moved along the rail 413 by the chuck driving unit 412.
  • An ultraviolet irradiation unit 414 that irradiates the template T held by the chuck 411 with ultraviolet rays is provided on the ceiling surface in the casing 410 and above the rail 413.
  • the ultraviolet irradiation unit 414 extends in the X direction as shown in FIG. Then, while the template T is moving along the rail 413, the surface T 1 of the template T is irradiated with ultraviolet rays from the ultraviolet irradiation unit 414, so that the entire surface T 1 of the template T is irradiated with ultraviolet rays.
  • the configuration of the pre-cleaning unit 340 is the same as the configuration of the pre-cleaning unit 330 described above, and a description thereof will be omitted.
  • the post-cleaning unit 350 includes a casing 420 having a loading / unloading port (not shown) for the template T formed on the side surface.
  • a mounting table 421 on which the template T is mounted is provided on the bottom surface in the casing 420.
  • Template T has a surface T 1 is placed on the top surface of the mounting table 421 to face upward.
  • elevating pins 422 for supporting the template T from below and elevating it are provided in the mounting table 421.
  • the elevating pin 422 can be moved up and down by the elevating drive unit 423.
  • a through hole 424 that penetrates the upper surface in the thickness direction is formed on the upper surface of the mounting table 421, and the elevating pin 422 is inserted through the through hole 424.
  • a rail 430 extending along the Y direction is provided on the mounting table 421 on the negative side in the X direction (downward direction in FIG. 27).
  • the rail 430 is formed from the outer side of the mounting table 421 on the Y direction negative direction (left direction in FIG. 27) to the outer side on the Y direction positive direction (right direction in FIG. 27).
  • An arm 431 is attached to the rail 430.
  • the arm 431 supports a cleaning liquid nozzle 432 for supplying a cleaning liquid onto the template T.
  • the cleaning liquid nozzle 432 has, for example, an elongated shape along the X direction that is the same as or longer than one side dimension of the template T.
  • an organic solvent or pure water is used as the cleaning liquid, and IPA (isopropyl alcohol), dibutyl ether, cyclohexane, or the like is used as the organic solvent.
  • the arm 431 is movable on the rail 430 by the nozzle driving unit 433. Accordingly, the cleaning liquid nozzle 432 can move from the standby unit 434 installed on the outer side of the mounting table 421 on the Y direction positive direction side to above the template T on the mounting table 421, and further on the surface T 1 of the template T. Can be moved in the side direction of the template T.
  • the arm 431 can be moved up and down by a nozzle driving unit 433, and the height of the cleaning liquid nozzle 432 can be adjusted.
  • An ultraviolet irradiation unit 435 that irradiates the template T with ultraviolet rays is provided on the ceiling surface in the casing 420 and above the mounting table 421.
  • the ultraviolet irradiation unit 435 is disposed so as to face the surface T 1 of the template T placed on the mounting table 421, and can irradiate the entire surface T 1 of the template T with ultraviolet rays.
  • the configuration of the post-cleaning units 351, 360, and 361 is the same as the configuration of the post-cleaning unit 350 described above, and a description thereof will be omitted.
  • the configuration of the heating units 334, 335, 344, and 345 described above is the same as the configuration of the heating units 42, 43, 52, and 53 in the wafer processing station 3 as shown in FIG.
  • the temperature control units 331, 332, 341, and 342 have the same configuration as the heating unit 334 described above, and a temperature control plate is used instead of the hot plate 135.
  • a cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature.
  • the lid 140 in the heating unit 334 may be omitted.
  • the imprint system 1 is configured as described above. Next, wafer processing, template processing imprint processing, and the like performed in the imprint system 1 will be described.
  • FIG. 29 shows the main processing flow of these wafer processing, template processing, and imprint processing
  • FIG. 30 shows the state of the wafer W and template T in each step.
  • the template transfer member 22, the template T from the template cassette C T on the cassette mounting table 80 of the template unloading station 5 is extracted, is conveyed to the transition unit 333 of the template processing station 300 (Step B1 in FIG. 29) .
  • the template T is transported to the pre-cleaning unit 330 by the transport unit 310 and is sucked and held by the chuck 411. Subsequently, the template T is irradiated with ultraviolet rays from the ultraviolet irradiation unit 414 while moving the template T along the rails 413 by the chuck driving unit 412. Thus, ultraviolet light is irradiated on the surface T 1 the entire surface of the template T, the surface T 1 of the template T is cleaned as shown in FIG. 30 (a) (step B2 in FIG. 29).
  • the transport unit 310 transports the template T to the release agent coating unit 320 and delivers it to the holding member 371.
  • the release agent nozzle 392 is moved to above the center of the template T and the template T is rotated.
  • the release agent S is supplied onto the rotating template T, and the release agent S is diffused on the template T by centrifugal force, so that the entire surface T 1 of the template T as shown in FIG. A release agent S is applied (step B3 in FIG. 29).
  • the template T is transported to the heating unit 334 by the transport unit 310.
  • the template T carried into the heating unit 334 is transferred to the lifting pins 132 and placed on the placement table 131.
  • the lid 140 is closed, and the template T is heated to, for example, 200 ° C. by the hot plate 135.
  • the release agent S on the template T is baked as shown in FIG. 30 (c) (step B4 in FIG. 29).
  • the template T is conveyed to the temperature adjustment unit 211 by the conveyance unit 310, and the template T is adjusted to a predetermined temperature.
  • the transport unit 310 transports the template T to the rinse unit 321 and holds the template T in the holding unit 402. Subsequently, the holding unit 402 is lowered, and the template T is immersed in the organic solvent stored in the immersion tank 401. When a predetermined time elapses, only the unreacted portion of the release agent S is peeled off, and the release agent S along the transfer pattern C is formed on the template T as shown in FIG. Step B5). Then, raise the holding portion 402, blown from the gas supply unit 405 gas gas to the template T, drying the surface T 1.
  • the unreacted part of the release agent S means a part other than the part where the release agent S chemically reacts with the surface T 1 of the template T and adsorbs to the surface T 1 .
  • the template T is transported to the transition unit 343 by the transport unit 310. Subsequently, the template T is transported to the imprint processing station 4 by the transport unit 70.
  • the steps B1 to B5 described above are repeated to form the release agent S on the plurality of templates T, and the plurality of templates T are continuously conveyed to the imprint processing station 4.
  • the template T on which the release agent S is formed may be temporarily stored in the buffer cassette 311 before the template T is conveyed to the imprint processing station 4.
  • the template T is transported to the transition unit 61 by the transport unit 70.
  • the template T is transported into the imprint unit 60 by the template transport mechanism in the imprint unit 60 (step B6 in FIG. 29).
  • the front and back surfaces of the template T are reversed by the template transport mechanism. That is, the rear surface T 2 of the template T is directed upwards.
  • the template T carried into the imprint unit 60 is sucked and held by the chuck 171 of the template holding unit 170.
  • predetermined processing is performed on the template T in the template processing station 300, and the wafer W is transferred from the wafer carry-in / out station 2 to the wafer processing station 3 while the template T is being transferred to the imprint unit 60 (step of FIG. 29).
  • B7 the wafer processing station 3 after the first resist solution is applied on the wafer W (step B8 in FIG. 29), the first resist solution on the wafer W is baked, as shown in FIG. 30 (e). the first resist film R 1 is formed on the wafer W as (step B9 in Fig. 29).
  • the plurality of wafers W are continuously transferred to the imprint processing station 4 and each wafer W is transferred to the imprint unit 60 (step B10 in FIG. 29). Note that these steps B7 to B10 are the same as the steps A2 to A5 in the above embodiment, and thus detailed description thereof is omitted.
  • step B11 in FIG. 29 the imprint unit 60, the second resist film R 2 is formed on the wafer W as shown in FIG. 30 (f) (step B11 in FIG. 29), the template T as shown in FIG. 30 (g) surface T 1 is pressed against the resist film R 2 a second on the wafer W, the transfer pattern C of the template T is transferred to the second resist film R 2 on the wafer W, the resist pattern P is formed ( Step B12 in FIG. 29). Thereafter, as shown in FIG. 30 (h), after the template T is raised and the resist pattern P is formed on the wafer W, the wafer W is unloaded from the imprint unit 60 and returned to the wafer cassette CW (FIG. 30). 29 step B13). Note that these steps B11 to B13 are the same as the steps A6 to A8 in the above-described embodiment, and thus detailed description thereof is omitted. Further, after step B13, the remaining film L on the wafer W may be removed as shown in FIG.
  • steps B10 to B13 are repeated, and a resist pattern P is formed on each of the plurality of wafers W by using one template T.
  • the template T is replaced. That is, after the front and back surfaces of the template T are reversed by the template transport mechanism, the template T is transported from the imprint unit 60 and transported to the transition unit 61 (step B14 in FIG. 29).
  • the template T is transported to the transition unit 343 of the template processing station 5 by the transport unit 70 and then transported to the post-cleaning unit 350 by the transport unit 310.
  • the template T conveyed to the post-cleaning unit 350 is transferred to the lifting pins 422 and placed on the placing table 421.
  • ultraviolet rays are irradiated from the ultraviolet irradiation unit 435 to the entire surface T 1 of the template T.
  • the release agent S on the template T is vaporized and most of it is removed.
  • the irradiation of ultraviolet rays is stopped, and the cleaning liquid is supplied to the release agent S remaining on the template T while moving the cleaning liquid nozzle 432 in the side direction of the template T.
  • the release agent S on the template T is removed, the surface T 1 is washed (step B15 in FIG. 29).
  • IPA is an organic solvent.
  • the rear surface T 2 may also be washed well surface T 1 of the template T.
  • the template T is transported to the inspection unit 352 by the transport unit 310. Then, in the inspection unit 352, for example, by observation or the like of the interference fringes, the surface T 1 of the template T is inspected (step B16 in FIG. 29). In the inspection unit 352, the rear surface T 2 may also be examined not only on the surface T 1 of the template T.
  • the template T is carried to the transit unit 333 by the transport unit 310, and returned to the template cassette C T by the template carrier 82.
  • the test result of the inspection unit 352 is good, for example, be surface T 1 it is properly cleaned of the template T, and if the surface T 1 is not deteriorated, the template T returned to the template cassette C T Are used again in the imprint unit 1.
  • the inspection result of the inspection unit 352 is bad, for example if the surface T 1 of the template T is degraded, the template T is carried to the outside of the imprint unit 1.
  • the predetermined resist pattern P is continuously formed on the plurality of wafers W while the template T is continuously replaced.
  • the release agent S is formed on the template T in the imprint system 1.
  • the template T can be continuously supplied to the imprint unit 60 while forming the film. Therefore, for example, even when the resist pattern P is formed on the plurality of wafers W before the template T deteriorates, the template T in the imprint unit 60 can be exchanged continuously and efficiently. Therefore, the predetermined resist pattern P can be appropriately formed on the plurality of wafers W.
  • processing blocks F5 and F6 constituting a template cleaning block are provided.
  • post-cleaning units 350, 351, 360, and 361 are provided and used in the imprint system 1. It is possible to clean the surface T 1 of the pre-template T. As a result, the template T can be used again in the imprint unit 1.
  • the template processing station 300 since the inspection unit 352 and 362 are provided, it is possible to inspect the surface T 1 of the template T after washing. Based on the inspection result, for example, the template T can be used again in the imprint unit 1 or can be determined to be carried out of the imprint unit 1. As a result, the template T can be used effectively, and a defective template T is not used in the imprint unit 1, so that a predetermined resist pattern P can be appropriately formed on the plurality of wafers W. .
  • both the processing blocks F1 to F4 constituting the release agent processing block and the processing blocks F5 and F6 constituting the template cleaning block are provided.
  • only the processing blocks F1 to F4 that are release agent processing blocks may be provided in the template processing station 300.
  • step B15 of the embodiment, B16 is omitted, the cleaning of the surface T 1 of the used template T is performed outside the imprint system 1.
  • the processing blocks F3 and F4 may be moved to the positions of the processing blocks F5 and F6, respectively, and a transition unit for transferring the template T may be provided at the positions of the processing blocks F3 and F4. .
  • the wafer carry-in / out station 2 the wafer processing station 3, the imprint processing station 4, the template processing station 300, and the template carry-in / out station 5 are arranged side by side in the horizontal direction.
  • the template processing station 300 may be stacked and disposed above the wafer processing station 3.
  • the template loading / unloading station 5 may be stacked and arranged above the wafer loading / unloading station 2. In such a case, the area occupied by the imprint system 1 can be reduced, and the manufacturing cost can be reduced.
  • the vertical relationship between the template processing station 300 and the template carry-in / out station 5 and the wafer processing station 3 and the wafer carry-in / out station 2 is not limited to the present embodiment, and the wafer processing station 3 and the wafer carry-in / out station 2 You may arrange in. However, since the template T is disposed above the wafer W in the imprint unit 60, it is preferable to dispose the template processing station 300 and the template carry-in / out station 5 in the upper layer as in the present embodiment.
  • processing blocks F1 to F4 which are release agent processing blocks may be provided in the template processing station 300, and the processing blocks F5 and F6 constituting the template cleaning block may be omitted.
  • step B15 of the embodiment, B16 is omitted, the cleaning of the surface T 1 of the used template T is performed outside the imprint system 1.
  • the configurations of the wafer carry-in / out station 2, the wafer processing station 3, the imprint processing station 4, the template processing station 300, and the template carry-in / out station 5 are the same as those in the above-described embodiment, and thus description thereof is omitted.
  • the release agent S after applying the release agent S on the template T in the template processing station 300, the release agent S is heated and baked, but instead of baking the release agent S. You may irradiate light. In such a case, the release agent S on the template T is irradiated with light having a wavelength of, for example, 350 nm to 2500 nm.
  • the surface T 1 of the template T and the active group of the release agent S can be chemically and strongly bonded, and the adhesion between the surface T 1 of the template T and the release agent S is improved. In other words, it can be brought into close contact with the surface T 1 of the template T of the release agent S in a short time.
  • an alcohol treatment may be performed instead of baking the release agent S.
  • alcohol is applied to the release agent S on the template T.
  • the release agent S is firmly and closely chemically react with the surface T 1 of the template T, thereby improving adhesion between the surfaces T 1 and the release agent S of the template T.
  • alcohol should just be alcohols and you may use alcohol other than ethanol.
  • methanol, propanol, butanol, pentanol, hexanol, heptanol may be used, or a mixture of these alcohols may be used.
  • the concentration of alcohol is not particularly limited, but is preferably 100%.
  • each processing unit is not limited to the above-described embodiment, and various configurations can be adopted as long as each processing can be performed.
  • the mold release agent S is rinsed by immersing the template T in the organic solvent stored in the immersion layer 401, as shown in FIGS. 20 and 22.
  • a rinse unit having the same configuration as the release agent coating unit 320 may be used.
  • a rinse liquid nozzle that supplies an organic solvent as a rinse liquid of the release agent S onto the template T is used.
  • an organic solvent is supplied onto the template T during rotation, to rinse the surface T 1 the entire surface of the template T.
  • a predetermined time elapses, only the unreacted portion of the release agent S is peeled off, and the release agent S along the transfer pattern C is formed on the template T.
  • it continues to further rotate the template T, drying finishing off the surface T 1. In this way, the release agent S on the template T is rinsed.
  • the second resist film R 2 is The possibility of adhering to the template T side cannot be denied. In view of such a case, adhesion to the second resist film R 2 of the wafer W side, the processing for improving the fixing production, it is preferable to previously performed before the formation of the second resist film R 2.
  • the surface of the first resist film R 1 is improved in adhesion to the UV curable resin, such as a silane coupling agent. It is preferable to form a film by applying an adhesive. Such a coating process may be performed, for example, after the first resist solution is baked (after step A4 and step B9), in accordance with the flow of FIGS.
  • the first resist solution for forming the first resist film R1 is applied and has the same configuration as the application units 30 to 33 as shown in FIG. A coating device can be used.
  • the wafer W is heated as necessary, further cooled as necessary, and then carried into the imprint unit 60. Thereafter, the flow shown in FIGS. Similarly, the second resist film R 2 in forming process (step A6, step B11) may be carried out.
  • the vapor of the adhesion agent is supplied to the wafer W surface A film may be formed.
  • FIG. 37 shows an outline of the configuration of a film forming unit 450 as a coating unit for the adhesive used at that time.
  • the film forming unit 450 is mounted on the substrate processing station 3, for example, instead of a part of the coating units 30 to 33.
  • the film forming unit 450 includes a mounting table 460 on which the wafer W is mounted, and a lid 461 provided above the mounting table 460.
  • the lid body 461 is configured to be movable in the vertical direction by, for example, an elevating mechanism (not shown). Further, the lower surface of the lid 461 is open.
  • the lid 461 and the mounting table 460 are integrated to form a sealed processing space K.
  • the wafer W is mounted such that the surface of the wafer W (for example, the formation surface of the first resist film R1) faces upward.
  • a temperature control plate 470 that controls the temperature of the wafer W is provided on the upper surface of the mounting table 460.
  • the temperature control plate 470 includes a Peltier element, for example, and can adjust the wafer W to a predetermined temperature.
  • lifting pins 471 for supporting the wafer W from below and lifting it are provided.
  • the elevating pin 471 can be moved up and down by an elevating drive unit 472.
  • a through hole 473 that penetrates the upper surface in the thickness direction is formed on the upper surface of the mounting table 460, and the elevating pin 471 is inserted through the through hole 473.
  • a gas supply pipe 490 that supplies vapor and water vapor of the adhesive onto the wafer W is provided on the ceiling surface of the lid 461.
  • the gas supply pipe 490 is connected to an adhesion agent supply source 491 that supplies vapor of the adhesion agent and a water vapor supply source 492 that supplies water vapor.
  • the gas supply pipe 490 includes a supply device group 493 including a valve, a flow rate control unit, and the like that control the flow of the adhesive agent supplied from the adhesive agent supply source 491 and the water vapor supplied from the water vapor supply source 492. Is provided.
  • the adhesive agent supply source 491 stores a liquid adhesive agent therein. Further, a gas supply pipe (not shown) for supplying nitrogen gas into the adhesive agent supply source 491 is connected to the adhesive agent supply source 491. In the adhesive agent supply source 491, the liquid adhesive agent is vaporized by supplying nitrogen gas therein, and a release agent vapor is generated. The adhesion agent vapor is supplied to the gas supply pipe 490 using the nitrogen gas as a carrier gas.
  • the water vapor supply source 492 stores, for example, water therein. For example, this water is heated and vaporized to generate water vapor.
  • An exhaust pipe 494 that exhausts the atmosphere of the processing space K is connected to the side surface of the lid 461.
  • An exhaust pump 495 that evacuates the atmosphere of the processing space K is connected to the exhaust pipe 494.
  • the film forming unit 450 In order to form an adhesive on the surface of the first resist film R1 using the film forming unit 450 having such a configuration, for example, after the process A4 shown in FIG. 13 and the process B9 shown in FIG.
  • the wafer W is transferred to the coating unit 450.
  • the transferred wafer W is transferred to the raising / lowering pins 471 and mounted on the mounting table 460.
  • the temperature of the wafer W on the mounting table 460 is adjusted to a predetermined temperature, for example, 50 ° C. by the temperature control plate 470.
  • the lid body 461 is lowered, and a processing space K sealed by the lid body 461 and the mounting table 460 is formed.
  • the vapor of the adhesive is supplied from the gas supply pipe 490 to the processing space K.
  • the supplied adhesive agent vapor is deposited on the surface of the wafer W.
  • water vapor is supplied from the gas supply pipe 490 to the processing space K, and the water vapor is supplied to the adhesion agent deposited on the wafer W.
  • the atmosphere in the processing space K may be replaced with an inert gas, for example, nitrogen gas.
  • the temperature of the wafer W on the mounting table 460 is adjusted to a predetermined temperature, for example, 50 ° C. by the temperature control plate 470.
  • the temperature of the wafer W is necessarily adjusted to a temperature higher than normal temperature.
  • the film may be formed at room temperature, for example, 20 ° C. to 25 ° C.
  • the steam is actively supplied to promote the hydrolysis.
  • the hydrolysis is performed by the moisture in the surrounding atmosphere even if the steam is not actively supplied.
  • the coupling reaction by dehydration condensation described above is realized.
  • resist solution vapor may be supplied onto the wafer W to form the first resist film R 1 on the wafer W.
  • the first resist film R 1 are those having an effect of enhancing the adhesion as described above are preferred.
  • the release agent application unit 320 is adopted, and the liquid release agent S is applied to the surface of the template T by the release agent nozzle 392 by the so-called spin coating method, and thereafter
  • the release agent was formed into a film by firing, but instead of this, a film is formed by supplying vapor of the release agent to the surface of the template T as in the film formation unit 450 described above.
  • a release agent film forming unit may be employed.
  • Such a release agent film forming unit that supplies the release agent vapor can be structurally the same as the film formation unit 450.
  • a release agent for example, a release agent supply source storing a silane coupling agent
  • the water vapor supply source 492 for supplying water vapor can be used as it is.
  • the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.
  • the present invention is not limited to this example and can take various forms.
  • the present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.
  • FPD flat panel display

Abstract

Disclosed is an imprinting system which comprises: a substrate processing station for forming a first resist film on a substrate; an imprinting station which is connected to the substrate processing station and provided with a plurality of imprinting units that form a second resist film on the substrate, on which the first resist film has been formed, and transfer a transfer pattern to the second resist film so that a predetermined resist pattern is formed on the second resist film; a substrate carrying in/out station for carrying a substrate into or out of the substrate processing station; and a template carrying in/out station for carrying a template into or out of the imprinting station. The imprinting station has a conveyance unit that comprises a substrate conveying arm for conveying a substrate to each imprinting unit and a template conveying arm for conveying a template to each imprinting unit.

Description

インプリントシステム、インプリント方法及びコンピュータ記憶媒体IMPRINT SYSTEM, IMPRINT METHOD, AND COMPUTER STORAGE MEDIUM
　本発明は、表面に転写パターンが形成されたテンプレートを用いて、基板上に所定のレジストパターンを形成するインプリントシステム、当該インプリントシステムを用いたインプリント方法及びコンピュータ記憶媒体に関する。 The present invention relates to an imprint system for forming a predetermined resist pattern on a substrate using a template having a transfer pattern formed on the surface, an imprint method using the imprint system, and a computer storage medium.
　例えば半導体デバイスの製造工程では、例えば半導体ウェハ（以下、「ウェハ」という。）にフォトリソグラフィー処理を行い、ウェハ上に所定のレジストパターンを形成することが行われている。そして、このレジストパターンをマスクとして、ウェハ上の被処理膜のエッチング処理が行われ、その後レジスト膜の除去処理などが行われて、所定の被処理膜のパターンが形成される。 For example, in a semiconductor device manufacturing process, for example, a semiconductor wafer (hereinafter referred to as “wafer”) is subjected to a photolithography process to form a predetermined resist pattern on the wafer. Then, using the resist pattern as a mask, an etching process is performed on the film to be processed on the wafer, and then a resist film removing process or the like is performed to form a predetermined pattern of the film to be processed.
　上述したレジストパターンを形成する際には、半導体デバイスのさらなる高集積化を図るため、当該レジストパターンの微細化が求められている。一般にフォトリソグラフィー処理における微細化の限界は、露光処理に用いる光の波長程度である。このため、従来より露光処理の光を短波長化することが進められている。しかしながら、露光光源の短波長化には技術的、コスト的な限界があり、光の短波長化を進める方法のみでは、例えば数ナノメートルオーダーの微細なレジストパターンを形成するのが困難な状況にある。 When forming the above-described resist pattern, the resist pattern is required to be miniaturized in order to further increase the integration of the semiconductor device. In general, the limit of miniaturization in the photolithography process is about the wavelength of light used for the exposure process. For this reason, it has been advancing to shorten the wavelength of exposure light. However, there are technical and cost limitations to shortening the wavelength of the exposure light source, and it is difficult to form a fine resist pattern on the order of several nanometers, for example, only by the method of advancing the light wavelength. is there.
　そこで、近年、ウェハにフォトリソグラフィー処理を行う代わりに、いわゆるインプリントと呼ばれる方法を用いてウェハ上に微細なレジストパターンを形成することが提案されている。この方法は、表面に微細なパターンを有するテンプレート（モールドや型と呼ばれることもある。）をウェハ上に形成したレジスト膜の表面に圧着させ、その後剥離し、当該レジスト膜の表面に直接パターンの転写を行うものである（特許文献１）。 Therefore, in recent years, it has been proposed to form a fine resist pattern on a wafer by using a so-called imprint method instead of performing a photolithography process on the wafer. In this method, a template having a fine pattern on the surface (sometimes referred to as a mold or a mold) is pressed onto the surface of a resist film formed on a wafer, then peeled off, and directly patterned on the surface of the resist film. Transfer is performed (Patent Document 1).
日本国特開２００９－４３９９８号公報Japanese Unexamined Patent Publication No. 2009-43998
　しかしながら、現状、テンプレートの表面に所定の微細なパターンを形成するのは技術的に困難である。すなわち、テンプレート上に、高いアスペクト比の深い溝を有するパターンを形成するのが困難な状況にある。かかるテンプレートを用いて上述したインプリント処理を行うと、ウェハ上に薄い膜厚のレジストパターンが形成される。この場合、その後ウェハ上の被処理膜のエッチング処理を行う際に、レジストパターンが十分な耐エッチング性能を発揮できず、被処理膜のパターンを適切に形成できない。 However, at present, it is technically difficult to form a predetermined fine pattern on the surface of the template. That is, it is difficult to form a pattern having a deep groove with a high aspect ratio on the template. When the imprint process described above is performed using such a template, a thin resist pattern is formed on the wafer. In this case, when the etching process of the film to be processed on the wafer is performed thereafter, the resist pattern cannot exhibit a sufficient etching resistance, and the pattern of the film to be processed cannot be appropriately formed.
　そこで、上述のインプリント処理を行う前に、予めウェハの被処理膜上に他のレジスト膜を形成しておくことが考えられる。かかる場合、インプリント処理を行うことで形成されたレジストパターンをマスクとして、他のレジスト膜をエッチング処理し、他のレジストパターンを形成する。そうすると、これら２つのレジストパターンが一体となって十分な耐エッチング性能を発揮し、被処理膜のパターンを適切に形成することができる。 Therefore, it is conceivable to form another resist film on the film to be processed in advance before performing the above-described imprint process. In this case, another resist film is etched using the resist pattern formed by the imprint process as a mask to form another resist pattern. Then, these two resist patterns can be integrated to exhibit sufficient etching resistance, and the pattern of the film to be processed can be appropriately formed.
　しかしながら、他のレジスト膜の形成処理とインプリント処理とでは、ウェハ１枚当たりに要する処理時間が異なる。他のレジスト膜は、例えばウェハ上に塗布液を塗布した後、当該塗布液を焼成することで形成される。この場合、ウェハ１枚当たりに要する処理時間が短く、現状の装置では、例えば１時間当たり２００枚のウェハに対して、他のレジスト膜の形成処理を行うことができる。一方、インプリント処理では、ウェハ上にレジスト膜を形成した後、当該レジスト膜に対するテンプレートのパターンの転写が複数回、例えば１００回行われる。このため、ウェハ１枚当たりに要する処理時間が長く、現状の装置では、例えば１時間当たり２０枚のウェハに対してインプリント処理を行うのが限界である。 However, the processing time required for each wafer differs between the process of forming another resist film and the imprint process. The other resist film is formed, for example, by applying a coating solution on a wafer and baking the coating solution. In this case, the processing time required for one wafer is short, and in the current apparatus, for example, another resist film can be formed on 200 wafers per hour. On the other hand, in the imprint process, after a resist film is formed on the wafer, the template pattern is transferred to the resist film a plurality of times, for example, 100 times. For this reason, the processing time required for one wafer is long, and the current apparatus has a limit of performing imprint processing on, for example, 20 wafers per hour.
　このように処理時間が異なる２つの処理を連続して行うと、インプリント処理を行っている間、他のレジスト膜の形成処理を停止せざるをえない。したがって、複数のウェハに対して所定のレジストパターンを連続的に効率よく形成することは現実的に困難であり、半導体デバイスの量産化に対応できない。 If two processes having different processing times are continuously performed as described above, the formation process of another resist film must be stopped while the imprint process is performed. Therefore, it is practically difficult to continuously and efficiently form a predetermined resist pattern on a plurality of wafers, and it cannot cope with mass production of semiconductor devices.
　本発明は、かかる点に鑑みてなされたものであり、テンプレートを用いて、基板上に所定のレジストパターンを適切且つ効率よく形成することを目的とする。 The present invention has been made in view of such a point, and an object thereof is to form a predetermined resist pattern on a substrate appropriately and efficiently using a template.
　前記の目的を達成するため、本発明は、表面に転写パターンが形成されたテンプレートを用いて、基板上に所定のレジストパターンを形成するインプリントシステムであって、基板上に第１のレジスト膜を形成する基板処理ステーションと、前記第１のレジスト膜が形成された基板上に第２のレジスト膜を形成し、前記転写パターンを前記第２のレジスト膜に転写して当該第２のレジスト膜に所定のレジストパターンを形成するインプリントユニットが複数配置され、前記基板処理ステーションに接続されたインプリント処理ステーションと、前記基板処理ステーションに接続され、当該基板処理ステーションに基板を搬入出する基板搬入出ステーションと、前記インプリント処理ステーションに接続され、当該インプリント処理ステーションにテンプレートを搬入出するテンプレート搬入出ステーションと、を有し、前記インプリント処理ステーションは、前記各インプリントユニットに対して基板を搬送する基板搬送アームと前記各インプリントユニットに対してテンプレートを搬送するテンプレート搬送アームとを備えた搬送ユニットを有する。 In order to achieve the above object, the present invention provides an imprint system for forming a predetermined resist pattern on a substrate using a template having a transfer pattern formed on the surface, wherein the first resist film is formed on the substrate. And a second resist film formed on the substrate on which the first resist film is formed, and the transfer pattern is transferred to the second resist film to form the second resist film. A plurality of imprint units for forming a predetermined resist pattern are arranged on the substrate, an imprint processing station connected to the substrate processing station, and a substrate loading / unloading substrate connected to the substrate processing station for loading / unloading the substrate into / from the substrate processing station. Station and the imprint processing station connected to the imprint processing station. A template loading / unloading station for loading / unloading the template to / from the imprint processing station, and the imprint processing station conveys the template to the respective imprint units. A transport unit including a template transport arm;
　本発明によれば、一の基板処理ステーションに対して、インプリント処理ステーションには、第２のレジスト膜の形成と所定のレジストパターンの形成（以下、「インプリント処理」という場合がある）を行うインプリントユニットが複数配置されている。このため、基板処理ステーションで複数の基板上に第１のレジスト膜を形成し、当該基板処理ステーションからインプリント処理ステーションに第１のレジスト膜が形成された複数の基板を連続して搬送できる。また、インプリント処理ステーションにはテンプレート搬入出ステーションが接続されているので、当該テンプレート搬入出ステーションからインプリント処理ステーションに複数のテンプレートを連続して搬送できる。さらに、インプリント処理ステーションでは、インプリントユニットに対する基板とテンプレートの搬送を一の搬送ユニットで行うので、基板とテンプレートを効率よく搬送することができる。そして、インプリント処理ステーションでは、各テンプレートを用いた各基板に対するインプリント処理を各インプリントユニットで並行して行うことができる。このため、基板処理ステーションにおける処理時間とインプリントユニットにおける処理時間が異なる場合でも、基板処理ステーションにおける基板の処理を停止させることなく、基板を連続して適切に処理することができる。したがって、基板上に所定のレジストパターンを適切且つ効率よく形成することができる。 According to the present invention, with respect to one substrate processing station, the imprint processing station forms a second resist film and a predetermined resist pattern (hereinafter sometimes referred to as “imprint processing”). A plurality of imprint units to be performed are arranged. Therefore, the first resist film can be formed on the plurality of substrates at the substrate processing station, and the plurality of substrates on which the first resist film is formed can be continuously transferred from the substrate processing station to the imprint processing station. In addition, since the template loading / unloading station is connected to the imprint processing station, a plurality of templates can be continuously conveyed from the template loading / unloading station to the imprint processing station. Furthermore, in the imprint processing station, since the substrate and the template are transported to the imprint unit by one transport unit, the substrate and the template can be transported efficiently. In the imprint processing station, imprint processing for each substrate using each template can be performed in parallel in each imprint unit. For this reason, even when the processing time in the substrate processing station and the processing time in the imprint unit are different, the substrate can be processed properly continuously without stopping the processing of the substrate in the substrate processing station. Therefore, a predetermined resist pattern can be appropriately and efficiently formed on the substrate.
　別な観点による本発明は、インプリントシステムにおいて、表面に転写パターンが形成されたテンプレートを用いて、基板上に所定のレジストパターンを形成するインプリント方法であって、前記インプリントシステムは、基板上に第１のレジスト膜を形成する基板処理ステーションと、前記第１のレジスト膜が形成された基板上に第２のレジスト膜を形成し、前記転写パターンを前記第２のレジスト膜に転写して当該第２のレジスト膜に所定のレジストパターンを形成するインプリントユニットが複数配置されると共に、前記各インプリントユニットに対して基板を搬送する基板搬送アームと前記各インプリントユニットに対してテンプレートを搬送するテンプレート搬送アームとを備えた搬送ユニットを有し、前記基板処理ステーションに接続されたインプリント処理ステーションと、前記基板処理ステーションに接続され、当該基板処理ステーションに基板を搬入出する基板搬入出ステーションと、前記インプリント処理ステーションに接続され、当該インプリント処理ステーションにテンプレートを搬入出するテンプレート搬入出ステーションと、を有し、前記基板処理ステーションにおいて複数の基板上に第１のレジスト膜を形成し、前記搬送ユニットを用いて、前記基板処理ステーションから前記インプリント処理ステーションに前記第１のレジスト膜が形成された複数の基板を連続して搬送すると共に、前記テンプレート搬入出ステーションから前記インプリント処理ステーションに複数のテンプレートを連続して搬送し、前記インプリント処理ステーションでは、各テンプレートを用いた各基板に対する前記所定のレジストパターンの形成が前記各インプリントユニットで並行して行なわれる。 According to another aspect, the present invention provides an imprint method for forming a predetermined resist pattern on a substrate using a template having a transfer pattern formed on a surface thereof in the imprint system, wherein the imprint system includes a substrate. A substrate processing station for forming a first resist film thereon, a second resist film is formed on the substrate on which the first resist film is formed, and the transfer pattern is transferred to the second resist film. A plurality of imprint units for forming a predetermined resist pattern on the second resist film, and a substrate transport arm for transporting a substrate to each imprint unit and a template to each imprint unit. A substrate transfer station including a template transfer arm, and the substrate processing station. An imprint processing station connected to the substrate processing station, a substrate loading / unloading station connected to the substrate processing station for loading / unloading the substrate, and a template connected to the imprint processing station. A template loading / unloading station for loading / unloading a first resist film on a plurality of substrates at the substrate processing station, and using the transfer unit, the substrate processing station to the imprint processing station. The plurality of substrates on which the first resist film is formed are continuously transferred, and a plurality of templates are continuously transferred from the template loading / unloading station to the imprint processing station. Forming said predetermined resist pattern for each substrate using the template is performed in parallel with each imprint unit.
　また別な観点による本発明によれば、前記インプリント方法をインプリントシステムによって実行させるために、当該インプリントシステムを制御する制御部のコンピュータ上で動作するプログラムを格納した、読み取り可能なコンピュータ記憶媒体が提供される。 According to another aspect of the present invention, in order to cause the imprint method to be executed by the imprint system, a readable computer storage storing a program that operates on a computer of a control unit that controls the imprint system. A medium is provided.
　本発明によれば、テンプレートを用いて、基板上に所定のレジストパターンを適切且つ効率よく形成することができる。 According to the present invention, a predetermined resist pattern can be appropriately and efficiently formed on a substrate using a template.
本実施の形態にかかるインプリントシステムの構成の概略を示す平面図である。It is a top view which shows the outline of a structure of the imprint system concerning this Embodiment. 本実施の形態にかかるインプリントシステムの構成の概略を示す側面図である。It is a side view which shows the outline of a structure of the imprint system concerning this Embodiment. 本実施の形態にかかるインプリントシステムの構成の概略を示す側面図である。It is a side view which shows the outline of a structure of the imprint system concerning this Embodiment. テンプレートの斜視図である。It is a perspective view of a template. テンプレートの側面図である。It is a side view of a template. レジスト塗布ユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of a resist application unit. レジスト塗布ユニットの構成の概略を示す横断面図である。It is a cross-sectional view which shows the outline of a structure of a resist application unit. 加熱ユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of a heating unit. インプリントユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of the imprint unit. インプリントユニットの構成の概略を示す横断面図である。It is a cross-sectional view which shows the outline of a structure of an imprint unit. 搬送ユニットの構成の概略を示す側面図である。It is a side view which shows the outline of a structure of a conveyance unit. 搬送ユニットの構成の概略を示す平面図である。It is a top view which shows the outline of a structure of a conveyance unit. ウェハ処理とインプリント処理の各工程を示したフローチャートである。It is the flowchart which showed each process of a wafer process and an imprint process. ウェハ処理とインプリント処理の各工程におけるウェハとテンプレートの状態を模式的に示した説明図であり、（ａ）はウェハ上に第１のレジスト膜が形成された様子を示し、（ｂ）はウェハ上に第２のレジスト膜が形成された様子を示し、（ｃ）はウェハ上の第２のレジスト膜を光重合させた様子を示し、（ｄ）はウェハ上にレジストパターンが形成された様子を示し、（ｅ）はウェハ上の残存膜が除去された様子を示す。It is explanatory drawing which showed typically the state of the wafer and template in each process of a wafer process and an imprint process, (a) shows a mode that the 1st resist film was formed on the wafer, (b) A state in which the second resist film is formed on the wafer is shown, (c) shows a state in which the second resist film on the wafer is photopolymerized, and (d) shows a resist pattern formed on the wafer. (E) shows a state in which the remaining film on the wafer has been removed. 他の実施の形態にかかる搬送ユニットの構成の概略を示す側面図である。It is a side view which shows the outline of a structure of the conveyance unit concerning other embodiment. 他の実施の形態にかかるインプリントシステムの構成の概略を示す平面図である。It is a top view which shows the outline of a structure of the imprint system concerning other embodiment. 他の実施の形態にかかるインプリントシステムの構成の概略を示す側面図である。It is a side view which shows the outline of a structure of the imprint system concerning other embodiment. 他の実施の形態にかかるインプリントシステムの内部構成の概略を示す側面図である。It is a side view which shows the outline of the internal structure of the imprint system concerning other embodiment. 他の実施の形態にかかるインプリントシステムの構成の概略を示す側面図である。It is a side view which shows the outline of a structure of the imprint system concerning other embodiment. 離型剤塗布ユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of a mold release agent application unit. 保持部材の構成の概略を示す平面図である。It is a top view which shows the outline of a structure of a holding member. 離型剤塗布ユニットの構成の概略を示す横断面図である。It is a cross-sectional view which shows the outline of a structure of a mold release agent application unit. リンスユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of a rinse unit. 前洗浄ユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of a pre-cleaning unit. 前洗浄ユニットの構成の概略を示す横断面図である。It is a cross-sectional view which shows the outline of a structure of a pre-cleaning unit. 後洗浄ユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of a post-cleaning unit. 後洗浄ユニットの構成の概略を示す横断面図である。It is a cross-sectional view which shows the outline of a structure of a post-cleaning unit. 加熱ユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of a heating unit. ウェハ処理、テンプレート処理及びインプリント処理の各工程を示したフローチャートである。It is the flowchart which showed each process of a wafer process, a template process, and an imprint process. ウェハ処理、テンプレート処理及びインプリント処理の各工程におけるウェハとテンプレートの状態を模式的に示した説明図であり、（ａ）はテンプレートの表面が洗浄された様子を示し、（ｂ）はテンプレートの表面に離型剤が塗布された様子を示し、（ｃ）はテンプレート上の離型剤が焼成された様子を示し、（ｄ）はテンプレート上に離型剤が成膜された様子を示し、（ｅ）はウェハ上に第１のレジスト膜が形成された様子を示し、（ｆ）はウェハ上に第２のレジスト膜が形成された様子を示し、（ｇ）はウェハ上の第２のレジスト膜を光重合させた様子を示し、（ｈ）はウェハ上にレジストパターンが形成された様子を示し、（ｉ）はウェハ上の残存膜が除去された様子を示す。It is explanatory drawing which showed typically the state of the wafer and template in each process of a wafer process, a template process, and an imprint process, (a) shows a mode that the surface of the template was wash | cleaned, (b) (C) shows a state in which the release agent on the template is baked, (d) shows a state in which the release agent is formed on the template, (E) shows how the first resist film is formed on the wafer, (f) shows how the second resist film is formed on the wafer, and (g) shows the second resist film on the wafer. A state in which the resist film is photopolymerized is shown, (h) shows a state in which a resist pattern is formed on the wafer, and (i) shows a state in which the remaining film on the wafer is removed. 他の実施の形態にかかるインプリントシステムの構成の概略を示す平面図である。It is a top view which shows the outline of a structure of the imprint system concerning other embodiment. 他の実施の形態にかかるインプリントシステムの構成の概略を示す平面図である。It is a top view which shows the outline of a structure of the imprint system concerning other embodiment. 他の実施の形態にかかるインプリントシステムの内部構成の概略を示す平面図である。It is a top view which shows the outline of the internal structure of the imprint system concerning other embodiment. 他の実施の形態にかかるインプリントシステムの構成の概略を示す側面図である。It is a side view which shows the outline of a structure of the imprint system concerning other embodiment. 他の実施の形態にかかるインプリントシステムの内部構成の概略を示す側面図である。It is a side view which shows the outline of the internal structure of the imprint system concerning other embodiment. 他の実施の形態にかかるインプリントシステムの構成の概略を示す側面図である。It is a side view which shows the outline of a structure of the imprint system concerning other embodiment. 密着剤の成膜ユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of the film-forming unit of adhesive agent.
　以下、本発明の実施の形態について説明する。図１は、本実施の形態にかかるインプリントシステム１の構成の概略を示す平面図である。図２及び図３は、インプリントシステム１の構成の概略を示す側面図である。 Hereinafter, embodiments of the present invention will be described. FIG. 1 is a plan view showing an outline of a configuration of an imprint system 1 according to the present embodiment. 2 and 3 are side views illustrating the outline of the configuration of the imprint system 1.
　本実施の形態のインプリントシステム１では、図４に示すように直方体形状を有し、表面に所定の転写パターンＣが形成されたテンプレートＴが用いられる。以下、転写パターンＣが形成されているテンプレートＴの面を表面Ｔ１といい、当該表面Ｔ１と反対側の面を裏面Ｔ２という。テンプレートＴの表面Ｔ１には、図５に示すように転写パターンＣの形状に沿った離型剤Ｓが成膜されている。なお、テンプレートＴには、可視光、近紫外光、紫外線などの光を透過可能な透明材料、例えばガラスが用いられる。また、離型剤Ｓの材料には、後述するウェハ上の第２のレジスト膜に対して撥液性を有する材料、例えばフッ素樹脂等が用いられる。 In the imprint system 1 of the present embodiment, a template T having a rectangular parallelepiped shape and having a predetermined transfer pattern C formed on the surface is used as shown in FIG. Hereinafter, the transfer pattern C means the side of the template T which is formed with the surface T 1, the surface T 1 opposite to the surface of the backside T 2. On the surface T 1 of the template T, the release agent S along the shape of the transfer pattern C as shown in FIG. 5 is deposited. For the template T, a transparent material that can transmit visible light, near ultraviolet light, ultraviolet light, or the like, such as glass, is used. Further, as the material of the release agent S, a material having liquid repellency with respect to a second resist film on the wafer, which will be described later, for example, a fluororesin is used.
　インプリントシステム１は、図１に示すように複数、例えば２５枚の基板としてのウェハＷをカセット単位で外部とインプリントシステム１との間で搬入出したり、ウェハカセットＣＷに対してウェハＷを搬入出したりする基板搬入出ステーションとしてのウェハ搬入出ステーション２と、ウェハＷに所定の処理を施す複数の処理ユニットを備えた基板処理ステーションとしてのウェハ処理ステーション３と、テンプレートＴを用いてウェハＷ上に所定のレジストパターンを形成するインプリントユニットを複数備えたインプリント処理ステーション４と、複数、例えば５枚のテンプレートＴをカセット単位で外部とインプリントシステム１との間で搬入出したり、テンプレートカセットＣＴに対してテンプレートＴを搬入出したりするテンプレート搬入出ステーション５と、一体に接続した構成を有している。ウェハ搬入出ステーション２、ウェハ処理ステーション３、インプリント処理ステーション４と、テンプレート搬入出ステーション５は、この順でＹ方向（図１の左右方向）に並べて配置されている。 As shown in FIG. 1, the imprint system 1 carries in and out a plurality of, for example, 25 wafers W as a substrate between the outside and the imprint system 1 in a cassette unit, or the wafer W with respect to the wafer cassette CW. A wafer loading / unloading station 2 as a substrate loading / unloading station, a wafer processing station 3 as a substrate processing station including a plurality of processing units for performing predetermined processing on the wafer W, and a template T. An imprint processing station 4 having a plurality of imprint units for forming a predetermined resist pattern on W, and a plurality of, for example, five templates T, are carried in and out of the imprint system 1 between the outside and the imprint system 1 in a cassette unit. te or transferring, the template T to the cassette C T A plate unloading station 5 has a configuration in which are integrally connected. The wafer carry-in / out station 2, the wafer processing station 3, the imprint processing station 4, and the template carry-in / out station 5 are arranged in this order in the Y direction (left-right direction in FIG. 1).
　ウェハ搬入出ステーション２には、カセット載置台１０が設けられている。カセット載置台１０は、複数のウェハカセットＣＷをＸ方向（図１中の上下方向）に一列に載置自在になっている。すなわち、ウェハ搬入出ステーション２は、複数のウェハＷを保有可能に構成されている。なお、本実施の形態において、ウェハカセットＣＷ内のウェハＷ上にはエッチング処理の対象となる被処理膜（図示せず）が予め形成されている。 The wafer loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 can mount a plurality of wafer cassettes CW in a row in the X direction (vertical direction in FIG. 1). That is, the wafer carry-in / out station 2 is configured to be capable of holding a plurality of wafers W. In this embodiment, a film to be processed (not shown) to be etched is formed in advance on the wafer W in the wafer cassette CW .
　ウェハ搬入出ステーション２には、Ｘ方向に延伸する搬送路１１上を移動可能なウェハ搬送体１２が設けられている。ウェハ搬送体１２は、水平方向に伸縮自在であり、且つ鉛直方向及び鉛直周り（θ方向）にも移動自在であり、ウェハカセットＣＷとウェハ処理ステーション３との間でウェハＷを搬送できる。 The wafer carry-in / out station 2 is provided with a wafer carrier 12 that can move on a conveyance path 11 extending in the X direction. The wafer transfer body 12 can be expanded and contracted in the horizontal direction and can also move in the vertical direction and the vertical direction (θ direction), and can transfer the wafer W between the wafer cassette CW and the wafer processing station 3.
　ウェハ処理ステーション３には、その中心部に搬送ユニット２０が設けられている。この搬送ユニット２０の周辺には、各種処理ユニットが多段に配置された、例えば４つの処理ブロックＧ１～Ｇ４が配置されている。ウェハ処理ステーション３の正面側（図１のＸ方向負方向側）には、ウェハ搬入出ステーション２側から第１の処理ブロックＧ１、第２の処理ブロックＧ２が順に配置されている。処理ステーション３の背面側（図１のＸ方向正方向側）には、ウェハ搬入出ステーション２側から第３の処理ブロックＧ３、第４の処理ブロックＧ４が順に配置されている。ウェハ処理ステーション３のウェハ搬入出ステーション２側には、ウェハＷの受け渡しを行うためのトランジションユニット２１が配置されている。ウェハ処理ステーション３のインプリント処理ステーション４側には、ウェハＷの受け渡しを行うためのトランジションユニット２２と、ウェハＷを一時的に保管するバッファカセット２３が配置されている。 The wafer processing station 3 is provided with a transfer unit 20 at the center thereof. Around the transport unit 20, for example, four processing blocks G1 to G4 in which various processing units are arranged in multiple stages are arranged. On the front side of the wafer processing station 3 (X direction negative direction side in FIG. 1), the first processing block G1 and the second processing block G2 are sequentially arranged from the wafer carry-in / out station 2 side. A third processing block G3 and a fourth processing block G4 are arranged in this order from the wafer carry-in / out station 2 side on the back side of the processing station 3 (the positive side in the X direction in FIG. 1). On the wafer carry-in / out station 2 side of the wafer processing station 3, a transition unit 21 for transferring the wafer W is disposed. On the imprint processing station 4 side of the wafer processing station 3, a transition unit 22 for delivering the wafer W and a buffer cassette 23 for temporarily storing the wafer W are arranged.
　搬送ユニット２０は、ウェハＷを保持して搬送し、且つ水平方向、鉛直方向及び鉛直周りに移動自在な搬送アームを有している。そして、搬送ユニット２０は、処理ブロックＧ１～Ｇ４内に配置された後述する各種処理ユニット、トランジションユニット２１、２２、及びバッファカセット２３に対してウェハＷを搬送できる。 The transfer unit 20 has a transfer arm that holds and transfers the wafer W and is movable in the horizontal direction, the vertical direction, and the vertical direction. The transfer unit 20 can transfer the wafer W to various processing units, transition units 21 and 22, and a buffer cassette 23, which will be described later, arranged in the processing blocks G1 to G4.
　第１の処理ブロックＧ１には、図２に示すように複数の液処理ユニット、例えばウェハＷ上に塗布液としての第１のレジスト液を塗布する塗布ユニットとしてのレジスト塗布ユニット３０、３１が下から順に２段に重ねられている。第２の処理ブロックＧ２も同様に、レジスト塗布ユニット３２、３３が下から順に２段に重ねられている。また、第１の処理ブロックＧ１及び第２の処理ブロックＧ２の最下段には、前記液処理ユニットに各種処理液を供給するためのケミカル室３４、３５がそれぞれ設けられている。 As shown in FIG. 2, the first processing block G1 includes a plurality of liquid processing units, for example, resist coating units 30, 31 as coating units for coating a first resist liquid as a coating liquid on the wafer W. Are stacked in two stages. Similarly, in the second processing block G2, resist coating units 32 and 33 are stacked in two stages in order from the bottom. In addition, chemical chambers 34 and 35 for supplying various processing liquids to the liquid processing unit are provided at the lowermost stages of the first processing block G1 and the second processing block G2, respectively.
　第３の処理ブロックＧ３には、図３に示すようにウェハＷの温度を調節する温度調節ユニット４０、４１、ウェハＷを加熱処理する加熱ユニット４２、４３が下から順に４段に重ねられている。 In the third processing block G3, as shown in FIG. 3, temperature adjusting units 40 and 41 for adjusting the temperature of the wafer W and heating units 42 and 43 for heating the wafer W are stacked in four stages in order from the bottom. Yes.
　第４の処理ブロックＧ４にも、第３の処理ブロックＧ３と同様に、温度調節ユニット５０、５１、ウェハＷを加熱処理する加熱ユニット５２、５３が下から順に４段に重ねられている。 In the fourth processing block G4, similarly to the third processing block G3, temperature control units 50 and 51 and heating units 52 and 53 for heating the wafer W are sequentially stacked in four stages from the bottom.
　インプリント処理ステーション４には、図１に示すように２列のインプリントブロックＥ１、Ｅ２が配置されている。第１のインプリントブロックＥ１はインプリント処理ステーション４の正面側（図１のＸ方向負方向側）に配置され、第２のインプリントブロックＥ２はインプリント処理ステーション４の背面側（図１のＸ方向正方向側）に配置されている。２列のインプリントブロックＥ１、Ｅ２の間には、ウェハＷとテンプレートＴを搬送するための搬送領域Ｅ３が形成されている。 In the imprint processing station 4, two rows of imprint blocks E1 and E2 are arranged as shown in FIG. The first imprint block E1 is disposed on the front side of the imprint processing station 4 (X direction negative direction side in FIG. 1), and the second imprint block E2 is on the back side of the imprint processing station 4 (in FIG. 1). (X direction positive direction side). A transfer area E3 for transferring the wafer W and the template T is formed between the two rows of imprint blocks E1 and E2.
　第１のインプリントブロックＥ１には、複数、例えば５基のインプリントユニット６０がＹ方向に並べて配置されている。また、各インプリントユニット６０の搬送領域側Ｅ３には、ウェハＷとテンプレートＴの受け渡しを行うトランジションユニット６１が配置されている。 In the first imprint block E1, a plurality of, for example, five imprint units 60 are arranged in the Y direction. Further, a transition unit 61 that transfers the wafer W and the template T is disposed on the transfer area side E3 of each imprint unit 60.
　第２のインプリントブロックＥ２にも、第１のインプリントブロックＥ１と同様に、複数、例えば５基のインプリントユニット６０とトランジションユニット６１がＹ方向に並べて配置されている。 Similarly to the first imprint block E1, a plurality of, for example, five imprint units 60 and transition units 61 are also arranged in the Y direction in the second imprint block E2.
　なお、インプリントユニット６０の数は、ウェハ処理ステーション３における処理時間とインプリントユニット６０の処理時間に基づいて設定される。すなわち、ウェハ処理ステーション３では、例えば１時間当たり２００枚のウェハＷに対してウェハ処理を行うことができる。一方、インプリントユニット６０では、例えば１時間当たり２０枚のウェハＷに対してインプリント処理を行う。したがって、本実施の形態では、インプリント処理ステーション４に１０基のインプリントユニット６０が設けられている。 Note that the number of imprint units 60 is set based on the processing time in the wafer processing station 3 and the processing time of the imprint unit 60. That is, the wafer processing station 3 can perform wafer processing on, for example, 200 wafers W per hour. On the other hand, in the imprint unit 60, for example, imprint processing is performed on 20 wafers W per hour. Therefore, in the present embodiment, ten imprint units 60 are provided in the imprint processing station 4.
　搬送領域Ｅ３には、ウェハＷとテンプレートＴを保持して搬送する搬送ユニット７０が設けられている。搬送ユニット７０は、搬送領域Ｅ３内をＹ方向に延伸する搬送路７１上を移動可能に構成されている。また、搬送ユニット７０は、後述するように水平方向に伸縮自在であり、且つ鉛直方向及び鉛直周り（θ方向）にも移動自在である。そして、搬送ユニット７０は、ウェハ処理ステーション３とトランジションユニット６１と間でウェハＷを搬送できると共に、テンプレート搬入出ステーション５とトランジションユニット６１との間でテンプレートＴを搬送できる。 In the transfer area E3, a transfer unit 70 that holds and transfers the wafer W and the template T is provided. The transport unit 70 is configured to be movable on a transport path 71 extending in the transport direction E3 in the Y direction. Further, as will be described later, the transport unit 70 can be expanded and contracted in the horizontal direction, and is also movable in the vertical direction and the vertical direction (θ direction). The transfer unit 70 can transfer the wafer W between the wafer processing station 3 and the transition unit 61 and can transfer the template T between the template carry-in / out station 5 and the transition unit 61.
　テンプレート搬入出ステーション５には、カセット載置台８０が設けられている。カセット載置台８０は、複数のテンプレートカセットＣＴをＸ方向（図１中の上下方向）に一列に載置自在になっている。すなわち、テンプレート搬入出ステーション５は、複数のテンプレートＴを保有可能に構成されている。 The template loading / unloading station 5 is provided with a cassette mounting table 80. The cassette mounting table 80 can mount a plurality of template cassettes CT in a line in the X direction (vertical direction in FIG. 1). That is, the template carry-in / out station 5 is configured to be able to hold a plurality of templates T.
　テンプレート搬入出ステーション５には、Ｘ方向に延伸する搬送路８１上を移動可能なテンプレート搬送体８２が設けられている。テンプレート搬送体８２は、水平方向に伸縮自在であり、且つ鉛直方向及び鉛直周り（θ方向）にも移動自在であり、テンプレートカセットＣＴと後述するトランジションユニット９０又はバッファカセット９１との間でテンプレートＴを搬送できる。 The template carry-in / out station 5 is provided with a template carrier 82 that can move on a conveyance path 81 extending in the X direction. Template carrier 82 is stretchable in the horizontal direction and the vertical is also movable in the direction and the vertical around (theta direction), the template with the transition unit 90 or a buffer cassette 91 to be described later as a template cassette C T T can be conveyed.
　テンプレート搬入出ステーション５には、インプリント処理ステーション４との間でテンプレートＴの受け渡しを行うためのトランジションユニット９０と、テンプレートＴを一時的に保管するバッファカセット９１が配置されている。なお、バッファカセット９１は、必要に応じて省略してもよい。 The template loading / unloading station 5 is provided with a transition unit 90 for transferring the template T to and from the imprint processing station 4 and a buffer cassette 91 for temporarily storing the template T. In addition, you may abbreviate | omit the buffer cassette 91 as needed.
　次に、上述したウェハ処理ステーション３のレジスト塗布ユニット３０～３３の構成について説明する。レジスト塗布ユニット３０は、図６に示すように側面にウェハＷの搬入出口（図示せず）が形成されたケーシング１００を有している。 Next, the configuration of the resist coating units 30 to 33 of the wafer processing station 3 described above will be described. As shown in FIG. 6, the resist coating unit 30 has a casing 100 in which a loading / unloading port (not shown) for the wafer W is formed on the side surface.
　ケーシング１００内の中央部には、ウェハを保持して回転させるスピンチャック１１０が設けられている。スピンチャック１１０は、水平な上面を有し、当該上面には、例えばウェハＷを吸引する吸引口（図示せず）が設けられている。この吸引口からの吸引により、ウェハＷをスピンチャック１１０上に吸着保持できる。 A spin chuck 110 that holds and rotates the wafer is provided at the center of the casing 100. The spin chuck 110 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the wafer W is provided on the upper surface. By suction from the suction port, the wafer W can be sucked and held on the spin chuck 110.
　スピンチャック１１０には、シャフト１１１を介して回転駆動部１１２が設けられている。この回転駆動部１１２により、スピンチャック１１０は鉛直周りに所定の速度で回転でき、且つ昇降できる。 The spin chuck 110 is provided with a rotation drive unit 112 via a shaft 111. By this rotation driving unit 112, the spin chuck 110 can rotate at a predetermined speed around the vertical and can move up and down.
　スピンチャック１１０の周囲には、ウェハＷから飛散又は落下する液体を受け止め、回収するカップ１１３が設けられている。カップ１１３の下面には、回収した液体を排出する排出管１１４と、カップ１１３内の雰囲気を排気する排気管１１５が接続されている。 Around the spin chuck 110, there is provided a cup 113 that receives and collects the liquid scattered or dropped from the wafer W. Connected to the lower surface of the cup 113 are a discharge pipe 114 for discharging the collected liquid and an exhaust pipe 115 for exhausting the atmosphere in the cup 113.
　図７に示すようにカップ１１３のＸ方向負方向（図７の下方向）側には、Ｙ方向（図７の左右方向）に沿って延伸するレール１２０が形成されている。レール１２０は、例えばカップ１１３のＹ方向負方向（図７の左方向）側の外方からＹ方向正方向（図７の右方向）側の外方まで形成されている。レール１２０には、アーム１２１が取り付けられている。 As shown in FIG. 7, a rail 120 extending along the Y direction (left and right direction in FIG. 7) is formed on the negative side of the cup 113 in the X direction (downward direction in FIG. 7). The rail 120 is formed, for example, from the outside of the cup 113 in the Y direction negative direction (left direction in FIG. 7) to the outside in the Y direction positive direction (right direction in FIG. 7). An arm 121 is attached to the rail 120.
　アーム１２１には、ウェハＷ上に第１のレジスト液を供給するレジスト液ノズル１２２が支持されている。アーム１２１は、ノズル駆動部１２３により、レール１２０上を移動自在である。これにより、レジスト液ノズル１２２は、カップ１１３のＹ方向正方向側の外方に設置された待機部１２４からカップ１１３内のウェハＷの中心部上方まで移動でき、さらに当該ウェハＷ上をウェハＷの径方向に移動できる。また、アーム１２１は、ノズル駆動部１２３によって昇降自在であり、レジスト液ノズル１２２の高さを調節できる。なお、本実施の形態において、塗布液としての第１のレジスト液には、例えばカーボンを有するレジスト液が用いられる。また、塗布液として、ＳＯＧ（Ｓｐｉｎ　Ｏｎ　Ｇｌａｓｓ）膜形成用の塗布液を用いてもよい。 The arm 121 supports a resist solution nozzle 122 that supplies the first resist solution onto the wafer W. The arm 121 is movable on the rail 120 by a nozzle driving unit 123. As a result, the resist solution nozzle 122 can move from the standby part 124 installed outside the cup 113 on the positive side in the Y direction to above the center of the wafer W in the cup 113, and further on the wafer W. It can move in the radial direction. The arm 121 can be moved up and down by a nozzle driving unit 123 and the height of the resist solution nozzle 122 can be adjusted. In the present embodiment, for example, a resist solution containing carbon is used as the first resist solution as the coating solution. Further, as a coating solution, a coating solution for forming an SOG (Spin On Glass) film may be used.
　なお、レジスト塗布ユニット３１～３３の構成は、上述したレジスト塗布ユニット３０の構成と同様であるので説明を省略する。 Note that the configuration of the resist coating units 31 to 33 is the same as the configuration of the resist coating unit 30 described above, and a description thereof will be omitted.
　次に、上述したウェハ処理ステーション３の加熱ユニット４２、４３、５２、５３の構成について説明する。加熱ユニット４２は、図８に示すように側面にウェハＷの搬入出口（図示せず）が形成されたケーシング１３０を有している。 Next, the configuration of the heating units 42, 43, 52, 53 of the wafer processing station 3 described above will be described. As shown in FIG. 8, the heating unit 42 has a casing 130 in which a loading / unloading port (not shown) for the wafer W is formed on the side surface.
　ケーシング１３０内の底面には、ウェハＷが載置される載置台１３１が設けられている。ウェハＷは、その被処理面が上方を向くように載置台１３１の上面に載置される。載置台１３１内には、ウェハＷを下方から支持し昇降させるための昇降ピン１３２が設けられている。昇降ピン１３２は、昇降駆動部１３３により上下動できる。載置台１３１の上面には、当該上面を厚み方向に貫通する貫通孔１３４が形成されており、昇降ピン１３２は、貫通孔１３４を挿通するようになっている。また、載置台１３１の上面には、ウェハＷを加熱する熱板１３５が設けられている。熱板１３５の内部には、例えば給電により発熱するヒータが設けられており、熱板１３５を所定の設定温度に調節できる。なお、この熱板１３５は、ウェハＷの上方、例えば後述する蓋体１４０の天井面に設けてもよい。また、ウェハＷの上方と下方に熱板１３５を設けてもよい。 A mounting table 131 on which the wafer W is mounted is provided on the bottom surface of the casing 130. The wafer W is mounted on the upper surface of the mounting table 131 so that the surface to be processed faces upward. In the mounting table 131, elevating pins 132 for supporting the wafer W from below and elevating it are provided. The elevating pin 132 can be moved up and down by the elevating drive unit 133. A through hole 134 that penetrates the upper surface in the thickness direction is formed on the upper surface of the mounting table 131, and the elevating pins 132 are inserted through the through holes 134. A hot plate 135 for heating the wafer W is provided on the upper surface of the mounting table 131. For example, a heater that generates heat by power feeding is provided inside the hot plate 135, and the hot plate 135 can be adjusted to a predetermined set temperature. The hot plate 135 may be provided above the wafer W, for example, on the ceiling surface of the lid 140 described later. Further, hot plates 135 may be provided above and below the wafer W.
　載置台１３１の上方には、上下動自在の蓋体１４０が設けられている。蓋体１４０は、下面が開口し、載置台１３１と一体となって処理室Ｋを形成する。蓋体１４０の上面中央部には、排気部１４１が設けられている。処理室Ｋ内の雰囲気は、排気部１４１から均一に排気される。 A lid 140 that is movable up and down is provided above the mounting table 131. The lid 140 has an open bottom surface and forms a processing chamber K together with the mounting table 131. An exhaust part 141 is provided at the center of the upper surface of the lid 140. The atmosphere in the processing chamber K is uniformly exhausted from the exhaust unit 141.
　なお、加熱ユニット４３、５２、５３の構成は、上述した加熱ユニット４２の構成と同様であるので説明を省略する。 In addition, since the structure of the heating units 43, 52, and 53 is the same as that of the heating unit 42 described above, the description thereof is omitted.
　また、温度調節ユニット４０、４１、５０、５１の構成についても、上述した加熱ユニット４２と同様の構成を有し、熱板１３５に代えて、温度調節板が用いられる。温度調節板の内部には、例えばペルチェ素子などの冷却部材が設けられており、温度調節板を設定温度に調節できる。また、この場合、加熱ユニット４２における蓋体１４０を省略してもよい。 Also, the temperature control units 40, 41, 50 and 51 have the same configuration as the heating unit 42 described above, and a temperature control plate is used instead of the heat plate 135. A cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature. In this case, the lid 140 in the heating unit 42 may be omitted.
　次に、上述したインプリント処理ステーション４のインプリントユニット６０の構成について説明する。インプリントユニット６０は、図９に示すように側面にウェハＷの搬入出口（図示せず）とテンプレートＴの搬入出口（図示せず）が形成されたケーシング１５０を有している。 Next, the configuration of the imprint unit 60 of the above-described imprint processing station 4 will be described. As shown in FIG. 9, the imprint unit 60 has a casing 150 having a wafer W loading / unloading port (not shown) and a template T loading / unloading port (not shown) formed on the side surfaces.
　ケーシング１５０内の底面には、ウェハＷが載置されて保持されるウェハ保持部１５１が設けられている。ウェハＷは、その被処理面が上方を向くようにウェハ保持部１５１の上面に載置される。ウェハ保持部１５１内には、ウェハＷを下方から支持し昇降させるための昇降ピン１５２が設けられている。昇降ピン１５２は、昇降駆動部１５３により上下動できる。ウェハ保持部１５１の上面には、当該上面を厚み方向に貫通する貫通孔１５４が形成されており、昇降ピン１５２は、貫通孔１５４を挿通するようになっている。また、ウェハ保持部１５１は、当該ウェハ保持部１５１の下方に設けられた移動機構１５５により、水平方向に移動可能で、且つ鉛直周りに回転自在である。 A wafer holder 151 on which the wafer W is placed and held is provided on the bottom surface of the casing 150. The wafer W is placed on the upper surface of the wafer holder 151 so that the surface to be processed faces upward. In the wafer holding part 151, raising / lowering pins 152 for supporting the wafer W from below and raising / lowering it are provided. The elevating pin 152 can be moved up and down by the elevating drive unit 153. A through hole 154 that penetrates the upper surface in the thickness direction is formed on the upper surface of the wafer holding portion 151, and the lifting pins 152 are inserted through the through holes 154. Further, the wafer holding unit 151 can be moved in the horizontal direction and can be rotated around the vertical by a moving mechanism 155 provided below the wafer holding unit 151.
　図１０に示すようにウェハ保持部１５１のＸ方向負方向（図１０の下方向）側には、Ｙ方向（図１０の左右方向）に沿って延伸するレール１６０が設けられている。レール１６０は、例えばウェハ保持部１５１のＹ方向負方向（図１０の左方向）側の外方からＹ方向正方向（図１０の右方向）側の外方まで形成されている。レール１６０には、アーム１６１が取り付けられている。 As shown in FIG. 10, a rail 160 extending along the Y direction (left and right direction in FIG. 10) is provided on the negative side in the X direction (downward direction in FIG. 10) of the wafer holding unit 151. The rail 160 is formed, for example, from the outside of the wafer holding portion 151 on the Y direction negative direction (left direction in FIG. 10) to the outside on the Y direction positive direction (right direction in FIG. 10). An arm 161 is attached to the rail 160.
　アーム１６１には、ウェハＷ上に第２のレジスト液を供給するレジスト液ノズル１６２が支持されている。レジスト液ノズル１６２は、例えばウェハＷの直径寸法と同じかそれよりも長い、Ｘ方向に沿った細長形状を有している。レジスト液ノズル１６２には、例えばインクジェット方式のノズルが用いられ、レジスト液ノズル１６２の下部には、長手方向に沿って一列に形成された複数の供給口（図示せず）が形成されている。そして、レジスト液ノズル１６２は、第２のレジスト液の供給タイミング、第２のレジスト液の供給量等を厳密に制御できる。 A resist solution nozzle 162 that supplies a second resist solution onto the wafer W is supported on the arm 161. The resist solution nozzle 162 has, for example, an elongated shape along the X direction that is the same as or longer than the diameter dimension of the wafer W. For example, an inkjet type nozzle is used as the resist solution nozzle 162, and a plurality of supply ports (not shown) formed in a line along the longitudinal direction are formed below the resist solution nozzle 162. The resist solution nozzle 162 can strictly control the supply timing of the second resist solution, the supply amount of the second resist solution, and the like.
　アーム１６１は、ノズル駆動部１６３により、レール１６０上を移動自在である。これにより、レジスト液ノズル１６２は、ウェハ保持部１５１のＹ方向正方向側の外方に設置された待機部１６４からウェハ保持部１５１上のウェハＷの上方まで移動でき、さらに当該ウェハＷの表面上をウェハＷの径方向に移動できる。また、アーム１６１は、ノズル駆動部１６３によって昇降自在であり、レジスト液ノズル１６２の高さを調整できる。 The arm 161 is movable on the rail 160 by the nozzle driving unit 163. As a result, the resist solution nozzle 162 can move from the standby unit 164 installed outside the wafer holding unit 151 on the Y direction positive direction side to above the wafer W on the wafer holding unit 151, and the surface of the wafer W The top can be moved in the radial direction of the wafer W. The arm 161 can be moved up and down by a nozzle driving unit 163, and the height of the resist solution nozzle 162 can be adjusted.
　ケーシング１５０内の天井面であって、ウェハ保持部１５１の上方には、図９に示すようにテンプレートＴを保持するテンプレート保持部１７０が設けられている。すなわち、ウェハ保持部１５１とテンプレート保持部１７０は、ウェハ保持部１５１に載置されたウェハＷと、テンプレート保持部１７０に保持されたテンプレートＴが対向するように配置されている。また、テンプレート保持部１７０は、テンプレートＴの裏面Ｔ２の外周部を吸着保持するチャック１７１を有している。チャック１７１は、当該チャック１７１の上方に設けられた移動機構１７２により、鉛直方向に移動自在で、且つ鉛直周りに回転自在になっている。これにより、テンプレートＴは、ウェハ保持部１５１上のウェハＷに対して所定の向きに回転し昇降できる。 A template holding unit 170 that holds the template T as shown in FIG. 9 is provided on the ceiling surface in the casing 150 and above the wafer holding unit 151. That is, the wafer holding unit 151 and the template holding unit 170 are arranged so that the wafer W placed on the wafer holding unit 151 and the template T held on the template holding unit 170 face each other. Furthermore, the template holding portion 170 has a chuck 171 for holding adsorb outer peripheral portion of the rear surface T 2 of the template T. The chuck 171 is movable in the vertical direction and rotatable about the vertical by a moving mechanism 172 provided above the chuck 171. As a result, the template T can be raised and lowered by rotating in a predetermined direction with respect to the wafer W on the wafer holder 151.
　テンプレート保持部１７０は、チャック１７１に保持されたテンプレートＴの上方に設けられた光源１７３を有している。光源１７３からは、例えば可視光、近紫外光、紫外線などの光が発せられ、この光源１７３からの光は、テンプレートＴを透過して下方に照射される。 The template holding unit 170 has a light source 173 provided above the template T held by the chuck 171. The light source 173 emits light such as visible light, near ultraviolet light, and ultraviolet light, and the light from the light source 173 passes through the template T and is irradiated downward.
　なお、インプリントユニット６０内には、トランジションユニット６１との間でウェハＷを搬送するウェハ搬送機構（図示せず）と、トランジションユニット６１との間でテンプレートＴを搬送するテンプレート搬送機構（図示せず）とが設けられている。また、テンプレート搬送機構は、テンプレートＴの表裏面を反転させるように回動自在に構成されている。 In the imprint unit 60, a wafer transfer mechanism (not shown) that transfers the wafer W to / from the transition unit 61 and a template transfer mechanism (not shown) that transfers the template T to / from the transition unit 61. ) And are provided. The template transport mechanism is configured to be rotatable so as to invert the front and back surfaces of the template T.
　次に、上述したインプリント処理ステーション４の搬送ユニット７０の構成について説明する。搬送ユニット７０は、図１１に示すようにウェハＷを保持して搬送する基板搬送アームとしてのウェハ搬送アーム１８０を複数、例えば２本有している。また、搬送ユニット７０は、テンプレートＴを保持して搬送するテンプレート搬送アーム１８１を複数、例えば２本有している。２本のテンプレート搬送アーム１８１は、２本のウェハ搬送アーム１８０の上方に設けられている。なお、２本のテンプレート搬送アーム１８１と２本のウェハ搬送アーム１８０との上下関係は本実施の形態に限定されず、２本のウェハ搬送アーム１８０が２本のテンプレート搬送アーム１８１の上方に配置されていてもよい。但し、インプリントユニット６０内では、テンプレートＴがウェハＷの上方に配置されるので、本実施の形態のように、２本のテンプレート搬送アーム１８１を２本のウェハ搬送アーム１８０の上方に配置するのが好ましい。 Next, the configuration of the transport unit 70 of the imprint processing station 4 described above will be described. As shown in FIG. 11, the transfer unit 70 has a plurality of, for example, two wafer transfer arms 180 as substrate transfer arms that hold and transfer the wafer W. Further, the transport unit 70 has a plurality of, for example, two template transport arms 181 that hold and transport the template T. The two template transfer arms 181 are provided above the two wafer transfer arms 180. The vertical relationship between the two template transfer arms 181 and the two wafer transfer arms 180 is not limited to this embodiment, and the two wafer transfer arms 180 are arranged above the two template transfer arms 181. May be. However, since the template T is arranged above the wafer W in the imprint unit 60, the two template transfer arms 181 are arranged above the two wafer transfer arms 180 as in the present embodiment. Is preferred.
　ウェハ搬送アーム１８０は、図１２に示すようにウェハＷの径よりも大きい径の略３／４円環状に構成されたアーム部１８２と、このアーム部１８２と一体に形成され、且つアーム部１８２を支持する支持部１８３とを有している。アーム部１８２には、内側に向かって突出し、ウェハＷを保持する保持部１８４が例えば４箇所に設けられている。ウェハ搬送アーム１８０は、この保持部１８４上にウェハＷを水平に保持することができる。 As shown in FIG. 12, the wafer transfer arm 180 is formed integrally with the arm portion 182 having an approximately 3/4 annular shape having a diameter larger than the diameter of the wafer W, and the arm portion 182. And a support portion 183 for supporting the. The arm portion 182 is provided with, for example, four holding portions 184 that protrude inward and hold the wafer W. The wafer transfer arm 180 can hold the wafer W horizontally on the holding unit 184.
　テンプレート搬送アーム１８１も、ウェハ搬送アーム１８０と同様に、テンプレートＴよりも大きい径の略３／４円環状に構成されたアーム部１８５と、このアーム部１８５と一体に形成され、且つアーム部１８５を支持する支持部１８６とを有している。アーム部１８５には、内側に向かって突出し、テンプレートＴの角部を保持する保持部１８７が例えば４箇所に設けられている。テンプレート搬送アーム１８１は、この保持部１８７上にテンプレートＴを水平に保持することができる。 Similarly to the wafer transfer arm 180, the template transfer arm 181 is also formed integrally with the arm portion 185 having an approximately 3/4 annular shape having a larger diameter than the template T, and the arm portion 185. And a support portion 186 for supporting the. The arm portion 185 is provided with holding portions 187 that protrude inward and hold corner portions of the template T, for example, at four locations. The template carrying arm 181 can hold the template T horizontally on the holding unit 187.
　ウェハ搬送アーム１８０及びテンプレート搬送アーム１８１の基端部には、図１１に示すようにアーム駆動部１９０が設けられている。このアーム駆動部１９０により、各ウェハ搬送アーム１８０及び各テンプレート搬送アーム１８１は独立して水平方向に移動できる。これらウェハ搬送アーム１８０、テンプレート搬送アーム１８１及びアーム駆動部１９０は、基台１９１に支持されている。基台１９１の下面には、シャフト１９２を介して回転駆動部１９３が設けられている。この回転駆動部１９３により、基台１９１及びテンプレート搬送アーム１８１はシャフト１９２を中心軸として回転でき、且つ昇降できる。また、回転駆動部１９３は上述した搬送路７１に取り付けられ、搬送ユニット７０は搬送路７１上を移動できる。 At the base ends of the wafer transfer arm 180 and the template transfer arm 181, an arm driving unit 190 is provided as shown in FIG. By this arm driving unit 190, each wafer transfer arm 180 and each template transfer arm 181 can move independently in the horizontal direction. The wafer transfer arm 180, the template transfer arm 181, and the arm driving unit 190 are supported on the base 191. A rotation drive unit 193 is provided on the lower surface of the base 191 via a shaft 192. By this rotation drive unit 193, the base 191 and the template transport arm 181 can be rotated about the shaft 192 as a central axis and can be moved up and down. In addition, the rotation driving unit 193 is attached to the transport path 71 described above, and the transport unit 70 can move on the transport path 71.
　以上のインプリントシステム１には、図１に示すように制御部２００が設けられている。制御部２００は、例えばコンピュータであり、プログラム格納部（図示せず）を有している。プログラム格納部には、インプリントシステム１におけるウェハ処理、インプリント処理等を実行するプログラムが格納されている。なお、このプログラムは、例えばコンピュータ読み取り可能なハードディスク（ＨＤ）、フレキシブルディスク（ＦＤ）、コンパクトディスク（ＣＤ）、マグネットオプティカルデスク（ＭＯ）、メモリーカードなどのコンピュータに読み取り可能な記憶媒体に記録されていたものであって、その記憶媒体から制御部２００にインストールされたものであってもよい。 The imprint system 1 described above is provided with a control unit 200 as shown in FIG. The control unit 200 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for executing wafer processing, imprint processing, and the like in the imprint system 1. This program is recorded in a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), memory card, or the like. Or installed in the control unit 200 from the storage medium.
　本実施の形態にかかるインプリントシステム１は以上のように構成されている。次に、そのインプリントシステム１で行われるウェハ処理、インプリント処理等について説明する。図１３は、このウェハ処理とインプリント処理の主な処理フローを示し、図１４は、各工程におけるウェハＷとテンプレートＴの状態を示している。 The imprint system 1 according to the present embodiment is configured as described above. Next, wafer processing, imprint processing, and the like performed in the imprint system 1 will be described. FIG. 13 shows the main processing flow of this wafer processing and imprint processing, and FIG. 14 shows the state of the wafer W and template T in each step.
　先ず、テンプレート搬入出ステーション５において、テンプレート搬送体８２によって、カセット載置台８０上のテンプレートカセットＣＴからテンプレートＴが取り出され、トランジションユニット９０に搬送される。なお、テンプレートカセットＣＴ内のテンプレートＴは、転写パターンＣが形成された表面Ｔ１が上方を向くように収容されている。 First, in template unloading station 5, by the template carrier 82, the template T is taken from the template cassette C T on the cassette mounting table 80, it is transported to the transit unit 90. Incidentally, the template T in the template cassette C T is the surface T 1 of the transfer pattern C is formed is accommodated to face upward.
　その後、搬送ユニット７０によって、テンプレートＴはトランジションユニット６１に搬送される。続いて、インプリントユニット６０内のテンプレート搬送機構によって、テンプレートＴはインプリントユニット６０内に搬送される（図１３の工程Ａ１）。このとき、テンプレート搬送機構によって、テンプレートＴの表裏面が反転される。すなわち、テンプレートＴの裏面Ｔ２が上方に向けられる。インプリントユニット６０に搬入されたテンプレートＴは、テンプレート保持部１７０のチャック１７１に吸着保持される。なお、テンプレート搬入出ステーション５からインプリント処理ステーション４には、複数のテンプレートＴが連続的に搬送される。 Thereafter, the template T is transported to the transition unit 61 by the transport unit 70. Subsequently, the template T is transported into the imprint unit 60 by the template transport mechanism in the imprint unit 60 (step A1 in FIG. 13). At this time, the front and back surfaces of the template T are reversed by the template transport mechanism. That is, the rear surface T 2 of the template T is directed upwards. The template T carried into the imprint unit 60 is sucked and held by the chuck 171 of the template holding unit 170. A plurality of templates T are continuously conveyed from the template loading / unloading station 5 to the imprint processing station 4.
　このようにテンプレート搬入出ステーション５からインプリントユニット６０へテンプレートＴを搬送中に、ウェハ搬入出ステーション２において、ウェハ搬送体１２により、カセット載置台１０上のテンプレートカセットＣＷからウェハＷが取り出され、ウェハ処理ステーション３のトランジションユニット２１に搬送される（図１３の工程Ａ２）。なお、ウェハカセットＣＷ内のウェハＷは、その被処理面が上方を向くように収容されている。 Thus, while the template T is being transferred from the template loading / unloading station 5 to the imprint unit 60, the wafer W is taken out from the template cassette CW on the cassette mounting table 10 by the wafer transfer body 12 at the wafer loading / unloading station 2. The wafer is transferred to the transition unit 21 of the wafer processing station 3 (step A2 in FIG. 13). The wafer W in the wafer cassette CW is accommodated so that the surface to be processed faces upward.
　その後、搬送ユニット２０によって、ウェハＷはレジスト塗布ユニット３０に搬送され、スピンチャック１１０に受け渡される。続いて、レジスト液ノズル１２２をウェハＷの中心部上方まで移動させると共に、ウェハＷを回転させる。そして、回転中のウェハＷ上に第１のレジスト液を供給し、遠心力により第１のレジスト液をウェハＷ上で拡散させて、ウェハＷの表面全面に第１のレジスト液を塗布する（図１３の工程Ａ３）。 Thereafter, the wafer W is transferred to the resist coating unit 30 by the transfer unit 20 and delivered to the spin chuck 110. Subsequently, the resist solution nozzle 122 is moved to above the center of the wafer W and the wafer W is rotated. Then, the first resist solution is supplied onto the rotating wafer W, the first resist solution is diffused on the wafer W by centrifugal force, and the first resist solution is applied to the entire surface of the wafer W ( Step A3) in FIG.
　その後、搬送ユニット２０によって、ウェハＷは加熱ユニット４２に搬送される。加熱ユニット４２に搬入されたウェハＷは、昇降ピン１３２に受け渡され、載置台１３１に載置される。続いて、蓋体１４０が閉じられ、ウェハＷは熱板１３５によって例えば２００℃に加熱される。所定時間経過後、ウェハＷ上の第１のレジスト液が焼成され、図１４（ａ）に示すようにウェハＷ上に第１のレジスト膜Ｒ１が形成される（図１３の工程Ａ４）。なお、第１のレジスト膜Ｒ１は、例えば１０ｎｍの膜厚で形成される。 Thereafter, the wafer W is transferred to the heating unit 42 by the transfer unit 20. The wafer W carried into the heating unit 42 is transferred to the lift pins 132 and placed on the placement table 131. Subsequently, the lid 140 is closed, and the wafer W is heated to, for example, 200 ° C. by the hot plate 135. After a predetermined time, is fired first resist solution on the wafer W, the first resist film R 1 is formed on the wafer W as shown in FIG. 14 (a) (step A4 in FIG. 13). The first resist film R 1 is formed by, for example, 10nm thickness of.
　その後、搬送ユニット２０によって、ウェハＷは温度調節ユニット４０に搬送され、ウェハＷが所定の温度、例えば常温に調節される。 Thereafter, the wafer W is transferred to the temperature adjustment unit 40 by the transfer unit 20, and the wafer W is adjusted to a predetermined temperature, for example, room temperature.
　その後、搬送ユニット２０によって、ウェハＷはトランジションユニット２２に搬送される。続いて、搬送ユニット７０によって、ウェハＷはインプリント処理ステーション４に搬送される。ここで、上述した工程Ａ２～Ａ４を繰り返し行い、複数のウェハＷ上に第１のレジスト膜Ｒ１を形成し、複数のウェハＷが連続的にインプリント処理ステーション４に搬送される。このとき、インプリント処理ステーション４にウェハＷを搬送する前に、バッファカセット２３において、第１のレジスト膜Ｒ１が形成されたウェハＷを一時的に保管してもよい。 Thereafter, the wafer W is transferred to the transition unit 22 by the transfer unit 20. Subsequently, the wafer W is transferred to the imprint processing station 4 by the transfer unit 70. Here repeats the step A2 ~ A4 described above, the first resist film R 1 is formed on a plurality of wafers W, a plurality of wafers W are transported continuously to the imprinting station 4. In this case, prior to transferring the wafer W to the imprinting station 4, the buffer cassette 23, the wafer W in which the first resist film R 1 is formed may be temporarily stored.
　その後、搬送ユニット７０によって、ウェハＷはトランジションユニット６１に搬送される。続いて、インプリントユニット６０内のウェハ搬送機構によって、ウェハＷはインプリントユニット６０内に搬送される（図１３の工程Ａ５）。 Thereafter, the wafer W is transferred to the transition unit 61 by the transfer unit 70. Subsequently, the wafer W is transferred into the imprint unit 60 by the wafer transfer mechanism in the imprint unit 60 (step A5 in FIG. 13).
　インプリントユニット６０に搬入されたウェハＷは、昇降ピン１５２に受け渡され、ウェハ保持部１５１上に載置され保持される。続いて、ウェハ保持部１５１に保持されたウェハＷを水平方向の所定の位置に移動させて位置合わせをした後、レジスト液ノズル１６２をウェハＷの径方向に移動させ、図１４（ｂ）に示すようにウェハＷ上に第２のレジスト液を塗布し、第２のレジスト膜Ｒ２を形成する（図１４の工程Ａ６）。このとき、制御部２００により、レジスト液ノズル１６２から供給される第２のレジスト液の供給タイミングや供給量等が制御される。すなわち、ウェハＷ上に形成されるレジストパターンにおいて、凸部に対応する部分（テンプレートＴの転写パターンＣにおける凹部に対応する部分）に塗布される第２のレジスト液の量は多く、凹部に対応する部分（転写パターンＣにおける凸部に対応する部分）に塗布される第２のレジスト液の量は少なくなるように制御される。このように転写パターンＣの開口率に応じてウェハＷ上に第２のレジスト液が塗布される。なお、第２のレジスト膜Ｒ２は、例えば５０ｎｍの膜厚で形成される。 The wafer W carried into the imprint unit 60 is transferred to the lift pins 152 and is placed and held on the wafer holding unit 151. Subsequently, after the wafer W held by the wafer holder 151 is moved to a predetermined position in the horizontal direction and aligned, the resist solution nozzle 162 is moved in the radial direction of the wafer W, and FIG. As shown, a second resist solution is applied onto the wafer W to form a second resist film R2 (step A6 in FIG. 14). At this time, the control unit 200 controls the supply timing, supply amount, and the like of the second resist solution supplied from the resist solution nozzle 162. That is, in the resist pattern formed on the wafer W, the amount of the second resist solution applied to the portion corresponding to the convex portion (the portion corresponding to the concave portion in the transfer pattern C of the template T) is large and corresponds to the concave portion. The amount of the second resist solution applied to the portion to be applied (the portion corresponding to the convex portion in the transfer pattern C) is controlled to be small. In this way, the second resist solution is applied onto the wafer W in accordance with the aperture ratio of the transfer pattern C. The second resist film R 2 is formed by, for example, 50nm thickness of.
　ウェハＷ上に第２のレジスト膜Ｒ２が形成されると、ウェハ保持部１５１に保持されたウェハＷを水平方向の所定の位置に移動させて位置合わせを行うと共に、テンプレート保持部１７０に保持されたテンプレートＴを所定の向きに回転させる。そして、図１４（ｂ）の矢印に示すようにテンプレートＴをウェハＷ側に下降させる。テンプレートＴは所定の位置まで下降し、テンプレートＴの表面Ｔ１がウェハＷ上の第２のレジスト膜Ｒ２に押し付けられる。なお、この所定の位置は、ウェハＷ上に形成されるレジストパターンの高さに基づいて設定される。続いて、光源１７３から光が照射される。光源１７３からの光は、図１４（ｃ）に示すようにテンプレートＴを透過してウェハＷ上の第２のレジスト膜Ｒ２に照射され、これにより第２のレジスト膜Ｒ２は光重合する。このようにしてウェハＷ上の第２のレジスト膜Ｒ２にテンプレートＴの転写パターンＣが転写され、レジストパターンＰが形成される（図１３の工程Ａ７）。 When the second resist film R 2 is formed on the wafer W, held together perform positioning by moving the wafer W held by the wafer holding unit 151 in a predetermined position in the horizontal direction, the template holding portion 170 The made template T is rotated in a predetermined direction. Then, the template T is lowered to the wafer W side as shown by the arrow in FIG. Template T is lowered to a predetermined position, the surface T 1 of the template T is pressed against the resist film R 2 of the second on the wafer W. The predetermined position is set based on the height of the resist pattern formed on the wafer W. Subsequently, light is emitted from the light source 173. Light from the light source 173 is irradiated on the second resist film R 2 on the wafer W passes through the template T as shown in FIG. 14 (c), whereby the second resist film R 2 is photopolymerized . The transfer pattern C of the template T is transferred to the resist film R 2 of the second on the wafer W, the resist pattern P is formed (step A7 in FIG. 13).
　その後、図１４（ｄ）に示すようにテンプレートＴを上昇させて、ウェハＷ上にレジストパターンＰを形成する。このとき、テンプレートＴの表面Ｔ１には離型剤Ｓが塗布されているので、ウェハＷ上のレジストがテンプレートＴの表面Ｔ１に付着することはない。その後、ウェハＷは、昇降ピン１５２によってウェハ搬送機構に受け渡され、インプリントユニット６０から搬出され、トランジションユニット６１に搬送される（図１３の工程Ａ８）。その後、ウェハＷは、搬送ユニット７０によってウェハ処理ステーション３に搬送された後、ウェハ搬送体１２によってウェハカセットＣＷに戻される。なお、ウェハＷ上に形成されたレジストパターンＰの凹部には、薄いレジストの残存膜Ｌが残る場合があるが、例えばインプリントシステム１の外部において、図１４（ｅ）に示すように当該残存膜Ｌを除去してもよい。 Thereafter, as shown in FIG. 14D, the template T is raised to form a resist pattern P on the wafer W. At this time, since the surface T 1 of the template T release agent S is coated, never resist on the wafer W adheres to the surface T 1 of the template T. Thereafter, the wafer W is transferred to the wafer transfer mechanism by the lift pins 152, transferred from the imprint unit 60, and transferred to the transition unit 61 (step A8 in FIG. 13). Thereafter, the wafer W is transferred to the wafer processing station 3 by the transfer unit 70 and then returned to the wafer cassette CW by the wafer transfer body 12. A thin resist residual film L may remain in the concave portion of the resist pattern P formed on the wafer W. For example, as shown in FIG. 14E, the residual film L remains outside the imprint system 1. The film L may be removed.
　以上の工程Ａ５～Ａ８を繰り返し行い、一のテンプレートＴを用いて、複数のウェハＷ上にレジストパターンＰをそれぞれ形成する。そして、所定枚数のウェハＷに対して工程Ａ５～Ａ８が行われると、テンプレートＴが交換される。すなわち、テンプレート搬送機構によってテンプレートＴの表裏面が反転された後、テンプレートＴはインプリントユニット６０から搬出され、トランジションユニット６１に搬送される（図１３の工程Ａ９）。その後、テンプレートＴは、搬送ユニット７０によってトランジションユニット９０に搬送された後、テンプレート搬送体８２によってテンプレートカセットＣＴに戻される。 The above steps A5 to A8 are repeated, and the resist pattern P is formed on each of the plurality of wafers W by using one template T. Then, when steps A5 to A8 are performed on a predetermined number of wafers W, the template T is replaced. That is, after the front and back surfaces of the template T are reversed by the template transport mechanism, the template T is transported from the imprint unit 60 and transported to the transition unit 61 (step A9 in FIG. 13). Thereafter, the template T, after being transported to the transit unit 90 by the transport unit 70, and returned to the template cassette C T by the template carrier 82.
　なお、テンプレートＴを交換するタイミングは、テンプレートＴの劣化等を考慮して設定される。また、ウェハＷに異なるパターンＰを形成する場合にも、テンプレートＴが交換される。例えばテンプレートＴを１回使用する度に当該テンプレートＴを交換してもよい。また、例えば１枚のウェハＷ毎にテンプレートＴを交換してもよいし、例えば１ロット毎にテンプレートＴを交換してもよい。 The timing for exchanging the template T is set in consideration of the deterioration of the template T and the like. The template T is also replaced when a different pattern P is formed on the wafer W. For example, the template T may be exchanged every time the template T is used once. Further, for example, the template T may be exchanged for each wafer W, or the template T may be exchanged for each lot, for example.
　このようにして、インプリントシステム１において、テンプレートＴを連続的に交換しつつ、複数のウェハＷに対して所定のレジストパターンＰが連続的に形成される。 Thus, in the imprint system 1, the predetermined resist pattern P is continuously formed on the plurality of wafers W while the template T is continuously replaced.
　以上の実施の形態によれば、インプリントシステム１において、図１４（ｅ）に示したようにウェハＷ上に第１のレジスト膜Ｒ１と、第２のレジスト膜Ｒ２のレジストパターンＰが形成される。そして、その後インプリントシステム１の外部のエッチング処理ユニット（図示せず）において、第２のレジスト膜Ｒ２のレジストパターンＰをマスクとして、第１のレジスト膜Ｒ１をエッチング処理してレジストパターンを形成する。そうすると、これら第１のレジスト膜Ｒ１のレジストパターンと第２のレジスト膜Ｒ２のレジストパターンＰが一体となって十分な耐エッチング機能を発揮する。したがって、ウェハＷ上の被処理膜を適切にエッチング処理して、当該被処理膜のパターンを適切に形成することができる。 According to the above embodiment, in the imprint system 1, first the resist film R 1 on the wafer W as shown in FIG. 14 (e), the second resist pattern P of the resist film R 2 It is formed. Thereafter the imprint system 1 external etching unit (not shown), a second resist pattern P of the resist film R 2 as a mask, a resist pattern of the first resist film R 1 is etched Form. Then, these first resist film R 1 of the resist pattern and second resist pattern P of the resist film R 2 exerts sufficient etching resistant work together. Therefore, it is possible to appropriately form the pattern of the film to be processed by appropriately etching the film to be processed on the wafer W.
　また、以上の実施の形態によれば、一のウェハ処理ステーション３に対して、インプリント処理ステーション４には、インプリントユニット６０が複数配置されている。このため、ウェハ処理ステーション３で複数のウェハＷ上に第１のレジスト膜Ｒ１を形成し、当該ウェハ処理ステーション３からインプリント処理ステーション４に第１のレジスト膜Ｒ１が形成された複数のウェハＷを連続して搬送できる。また、インプリント処理ステーション３にはテンプレート搬入出ステーション５が接続されているので、当該テンプレート搬入出ステーション５からインプリント処理ステーション４に複数のテンプレートＴを連続して搬送できる。そして、インプリント処理ステーション４では、各テンプレートＴを用いた各ウェハＷに対するインプリント処理を各インプリントユニット６０で並行して行うことができる。このため、ウェハ処理ステーション３における処理時間とインプリントユニット６０における処理時間が異なる場合でも、ウェハ処理ステーション３におけるウェハ処理を停止させることなく、ウェハＷを連続して適切に処理することができる。したがって、ウェハＷ上に所定のレジストパターンＰを適切且つ効率よく形成することができる。また、これによって、半導体デバイスの量産化を実現することも可能となる。 Further, according to the above embodiment, a plurality of imprint units 60 are arranged in the imprint processing station 4 with respect to one wafer processing station 3. Therefore, the wafer processing station 3 in the first on a plurality of wafers W of the resist film R 1 is formed from the wafer processing station 3 in the imprint processing station 4 the first resist film R 1 is more formed The wafer W can be continuously transferred. Further, since the template loading / unloading station 5 is connected to the imprint processing station 3, a plurality of templates T can be continuously transferred from the template loading / unloading station 5 to the imprint processing station 4. In the imprint processing station 4, an imprint process for each wafer W using each template T can be performed in parallel in each imprint unit 60. For this reason, even when the processing time in the wafer processing station 3 and the processing time in the imprint unit 60 are different, the wafer W can be appropriately processed continuously without stopping the wafer processing in the wafer processing station 3. Therefore, the predetermined resist pattern P can be appropriately and efficiently formed on the wafer W. This also enables mass production of semiconductor devices.
　また、インプリント処理ステーション４では、インプリントユニット６０に対するウェハＷとテンプレートＴの搬送を一の搬送ユニット７０で行うので、ウェハＷとテンプレートＴを効率よく搬送することができる。さらに、搬送ユニット７０は、２本のウェハ搬送アーム１８０と２本のテンプレート搬送アーム１８１を有しているので、トランジションユニット２２、６１、９０に対するウェハＷ又はテンプレートＴの搬入出を同時に行うことができる。したがって、インプリント処理ステーション４におけるウェハＷとテンプレートＴの搬送をさらに効率よく行うことができる。 In the imprint processing station 4, the wafer W and the template T are transferred to the imprint unit 60 by the single transfer unit 70, so that the wafer W and the template T can be transferred efficiently. Furthermore, since the transfer unit 70 includes the two wafer transfer arms 180 and the two template transfer arms 181, the wafer W or the template T can be transferred into and out of the transition units 22, 61, and 90 simultaneously. it can. Therefore, the transfer of the wafer W and the template T at the imprint processing station 4 can be performed more efficiently.
　また、ウェハ処理ステーション３では、レジスト塗布ユニット３０においてウェハＷ上に第１のレジスト液を塗布した後、加熱ユニット４２においてウェハＷ上の第１のレジスト液を焼成している。したがって、ウェハＷ上に第１のレジスト膜Ｒ１を適切に形成することができる。 In the wafer processing station 3, after the first resist solution is applied onto the wafer W in the resist coating unit 30, the first resist solution on the wafer W is baked in the heating unit 42. Therefore, it is possible to appropriately form a first resist film R 1 on the wafer W.
　以上の実施の形態の搬送ユニット７０において、図１５に示すように２本のウェハＷ搬送アーム１８０と２本のテンプレート搬送アーム１８１との間に、遮蔽板２１０を設けてもよい。遮蔽板２１０は、少なくともウェハ搬送アーム１８０よりも大きく形成されている。かかる場合、テンプレート搬送アーム１８１にパーティクル等が付着した場合でも、当該パーティクルがウェハ搬送アーム１８０に再付着するのを抑制することができる。したがって、ウェハＷを適切に搬送することができる。 In the transfer unit 70 of the above embodiment, a shielding plate 210 may be provided between the two wafer W transfer arms 180 and the two template transfer arms 181 as shown in FIG. The shielding plate 210 is formed larger than at least the wafer transfer arm 180. In such a case, even when particles or the like adhere to the template transfer arm 181, the particles can be prevented from reattaching to the wafer transfer arm 180. Therefore, the wafer W can be appropriately transferred.
　また、搬送ユニット７０のテンプレート搬送アーム１８１は、アーム駆動部１９０によって回動自在に構成されていてもよい。かかる場合、テンプレート搬送アーム１８１の保持部１８７には、テンプレートＴを吸着保持する吸着パッド（図示せず）が設けられる。そして、テンプレート搬送アーム１８１によってテンプレートＴの表裏面を反転させることができる。なお、この場合、インプリントユニット６０内のテンプレート搬送機構によるテンプレートＴの表裏面の反転を省略することができる。 Further, the template transport arm 181 of the transport unit 70 may be configured to be rotatable by the arm driving unit 190. In such a case, the holding portion 187 of the template transport arm 181 is provided with a suction pad (not shown) for sucking and holding the template T. Then, the front and back surfaces of the template T can be reversed by the template transport arm 181. In this case, inversion of the front and back surfaces of the template T by the template transport mechanism in the imprint unit 60 can be omitted.
　以上の実施の形態のインプリントシステム１において、図１６に示すようにテンプレート搬入出ステーション５とインプリント処理ステーション４との間に、テンプレートＴに所定の処理を複数の処理ユニットを備えたテンプレート処理ステーション３００を配置してもよい。かかる場合、ウェハ搬入出ステーション５に設けられていたトランジションユニット９０とバッファカセット９１は省略され、これらのユニットの機能は、後述するようにテンプレート処理ステーション３００が担う。 In the imprint system 1 according to the above embodiment, a template process in which a predetermined process is performed on the template T between the template carry-in / out station 5 and the imprint processing station 4 as shown in FIG. Station 300 may be arranged. In this case, the transition unit 90 and the buffer cassette 91 provided in the wafer carry-in / out station 5 are omitted, and the functions of these units are performed by the template processing station 300 as described later.
　テンプレート処理ステーション３００には、その中心部に搬送ユニット３１０が設けられている。この搬送ユニット３１０の周辺には、各種処理ユニットが多段に配置された、例えば６つの処理ブロックＦ１～Ｆ６が配置されている。テンプレート処理ステーション３００の正面側（図１６のＸ方向負方向側）には、テンプレート搬入出ステーション５側から第１の処理ブロックＦ１、第２の処理ブロックＦ２が順に配置されている。テンプレート処理ステーション３００のテンプレート搬入出ステーション５側には、第３の処理ブロックＦ３が配置され、テンプレート処理ステーション３００のインプリント処理ステーション４側には、第４の処理ブロックＦ４とバッファカセット３１１が配置されている。テンプレート処理ステーション３００の背面側（図１６のＸ方向正方向側）には、テンプレート搬入出ステーション５側から第５の処理ブロックＦ５、第６の処理ブロックＦ６が順に配置されている。搬送ユニット３１０は、これらの処理ブロックＦ１～Ｆ６内に配置された後述する各種処理ユニット及びバッファカセット３１１に対してテンプレートＴを搬送できる。なお、本実施の形態においては、処理ブロックＦ１～Ｆ４で離型剤処理ブロックを構成し、処理ブロックＦ５、Ｆ６でテンプレート洗浄ブロックを構成している。 The template processing station 300 is provided with a transport unit 310 at the center thereof. Around the transport unit 310, for example, six processing blocks F1 to F6 in which various processing units are arranged in multiple stages are arranged. On the front side of the template processing station 300 (X direction negative direction side in FIG. 16), the first processing block F1 and the second processing block F2 are sequentially arranged from the template loading / unloading station 5 side. A third processing block F3 is disposed on the template loading / unloading station 5 side of the template processing station 300, and a fourth processing block F4 and a buffer cassette 311 are disposed on the imprint processing station 4 side of the template processing station 300. Has been. A fifth processing block F5 and a sixth processing block F6 are arranged in this order from the template loading / unloading station 5 side on the back side of the template processing station 300 (X direction positive direction side in FIG. 16). The transport unit 310 can transport the template T to various processing units and buffer cassettes 311 described later disposed in the processing blocks F1 to F6. In the present embodiment, the processing blocks F1 to F4 constitute a release agent processing block, and the processing blocks F5 and F6 constitute a template cleaning block.
　第１の処理ブロックＦ１には、図１７に示すように複数の液処理ユニット、例えばテンプレートＴに離型剤Ｓを塗布する離型剤塗布ユニット３２０、テンプレートＴ上の離型剤Ｓをリンスするリンスユニット３２１が下から順に２段に重ねられている。第２の処理ブロックＦ２も同様に、離型剤塗布ユニット３２２、リンスユニット３２３が下から順に２段に重ねられている。また、第１の処理ブロックＦ１及び第２の処理ブロックＦ２の最下段には、前記液処理ユニットに各種処理液を供給するためのケミカル室３２４、３２５がそれぞれ設けられている。 In the first processing block F1, as shown in FIG. 17, a plurality of liquid processing units, for example, a release agent application unit 320 for applying the release agent S to the template T, and the release agent S on the template T are rinsed. Rinse units 321 are stacked in two stages in order from the bottom. Similarly, in the second processing block F2, the release agent coating unit 322 and the rinse unit 323 are stacked in two stages from the bottom. In addition, chemical chambers 324 and 325 for supplying various processing liquids to the liquid processing unit are respectively provided in the lowermost stages of the first processing block F1 and the second processing block F2.
　第３の処理ブロックＦ３には、図１８に示すようにテンプレートＴに対して紫外線を照射し、テンプレートＴ上に離型剤Ｓが成膜される前の表面Ｔ１を洗浄する前洗浄ユニット３３０、テンプレートＴの温度を調節する温度調節ユニット３３１、３３２、テンプレートＴの受け渡しを行うためのトランジションユニット３３３、テンプレートＴを加熱処理する加熱ユニット３３４、３３５が下から順に６段に重ねられている。 The third to the processing block F3, ultraviolet rays are irradiated to the template T as shown in FIG. 18, the pre-cleaning unit for cleaning prior to the surface T 1 that the release agent S on the template T is deposited 330 The temperature adjusting units 331 and 332 for adjusting the temperature of the template T, the transition unit 333 for transferring the template T, and the heating units 334 and 335 for heating the template T are stacked in six steps from the bottom.
　第４の処理ブロックＦ４にも、第３の処理ブロックＦ３と同様に、前洗浄ユニット３４０、温度調節ユニット３４１、３４２、トランジションユニット３４３、加熱ユニット３４４、３４５が下から順に６段に重ねられている。 Similarly to the third processing block F3, the preprocessing unit 340, the temperature control units 341 and 342, the transition unit 343, and the heating units 344 and 345 are also stacked in the fourth processing block F4 in order from the bottom in six stages. Yes.
　第５の処理ブロックＦ５には、図１９に示すように使用後のテンプレートＴの表面Ｔ１を洗浄する後洗浄ユニット３５０、３５１、洗浄後のテンプレートＴの表面Ｔ１を検査する検査ユニット３５２が下から順に３段に重ねられている。 The fifth processing block F5, the inspection unit 352 for inspecting the cleaning unit 350 and 351, the surface T 1 of the template T after washing after cleaning the surface T 1 of the template T after use, as shown in FIG. 19 Three layers are stacked in order from the bottom.
　第６の処理ブロックＦ６にも、第５の処理ブロックＦ５と同様に、後洗浄ユニット３６０、３６１、検査ユニット３６２が下から順に３段に重ねられている。なお、後洗浄ユニット３５０、３５１、３６０、３６１は、テンプレートＴの裏面Ｔ２もさらに洗浄してもよく、検査ユニット３５２、３６２は、テンプレートＴの裏面Ｔ２もさらに検査してもよい。 In the sixth processing block F6, as in the fifth processing block F5, post-cleaning units 360 and 361 and an inspection unit 362 are stacked in three stages in order from the bottom. Incidentally, post-cleaning unit 350,351,360,361 may be the rear surface T 2 also further washed template T, the inspection unit 352, 362 may be further examined also the rear surface T 2 of the template T.
　次に、上述した離型剤塗布ユニット３２０、３２２の構成について説明する。離型剤塗布ユニット３２０は、図２０に示すように側面にテンプレートＴの搬入出口（図示せず）が形成されたケーシング３７０を有している。 Next, the configuration of the release agent application units 320 and 322 described above will be described. As shown in FIG. 20, the release agent coating unit 320 has a casing 370 in which a loading / unloading port (not shown) for the template T is formed on the side surface.
　ケーシング３７０内の中央部には、テンプレートＴを保持して回転させる保持部材３７１が設けられている。保持部材３７１の中央部分は下方に窪み、テンプレートＴを収容する収容部３７２が形成されている。収容部３７２の下部には、テンプレートＴの外形より小さい溝部３７２ａが形成されている。したがって、収容部３７２内では、溝部３７２ａによってテンプレートＴの下面内周部は保持部材３７１と接しておらず、テンプレートＴの下面外周部のみが保持部材３７１に支持されている。収容部３７２は、図２１に示すようにテンプレートＴの外形に適合した略四角形の平面形状を有している。収容部３７２には、側面から内側に突出した突出部３７３が複数形成され、この突出部３７３により、収容部３７２に収容されるテンプレートＴの位置決めがされる。また、搬送ユニット３１０の搬送アームから収容部３７２にテンプレートＴを受け渡す際に、当該搬送アームが収容部３７２と干渉するのを避けるため、収容部３７２の外周には、切欠き部３７４が４箇所に形成されている。 A holding member 371 that holds and rotates the template T is provided at the center of the casing 370. A central portion of the holding member 371 is recessed downward, and an accommodating portion 372 for accommodating the template T is formed. A groove portion 372 a smaller than the outer shape of the template T is formed in the lower portion of the housing portion 372. Therefore, in the accommodating part 372, the inner peripheral part of the lower surface of the template T is not in contact with the holding member 371 by the groove part 372a, and only the outer peripheral part of the lower surface of the template T is supported by the holding member 371. As shown in FIG. 21, the accommodating portion 372 has a substantially rectangular planar shape that conforms to the outer shape of the template T. A plurality of projecting portions 373 projecting inward from the side surfaces are formed in the housing portion 372, and the template T housed in the housing portion 372 is positioned by the projecting portions 373. Further, when the template T is transferred from the transfer arm of the transfer unit 310 to the storage unit 372, there are four notches 374 on the outer periphery of the storage unit 372 in order to avoid the transfer arm from interfering with the storage unit 372. It is formed in the place.
　保持部材３７１は、図２０に示すようにカバー体３７５に取り付けられ、保持部材３７１の下方には、シャフト３７６を介して回転駆動部３７７が設けられている。この回転駆動部３７７により、保持部材３７１は鉛直周りに所定の速度で回転でき、且つ昇降できる。 The holding member 371 is attached to the cover body 375 as shown in FIG. 20, and a rotation driving unit 377 is provided below the holding member 371 via a shaft 376. By this rotation drive unit 377, the holding member 371 can rotate around the vertical at a predetermined speed and can move up and down.
　保持部材３７１の周囲には、テンプレートＴから飛散又は落下する離型剤Ｓを受け止め、回収するカップ３８０が設けられている。カップ３８０の下面には、回収した離型剤Ｓを排出する排出管３８１と、カップ３８０内の雰囲気を排気する排気管３８２が接続されている。 Around the holding member 371, there is provided a cup 380 that receives and collects the release agent S scattered or dropped from the template T. A discharge pipe 381 for discharging the collected release agent S and an exhaust pipe 382 for exhausting the atmosphere in the cup 380 are connected to the lower surface of the cup 380.
　図２２に示すようにカップ３８０のＸ方向負方向（図２２の下方向）側には、Ｙ方向（図２２の左右方向）に沿って延伸するレール３９０が形成されている。レール３９０は、例えばカップ３８０のＹ方向負方向（図２２の左方向）側の外方からＹ方向正方向（図２２の右方向）側の外方まで形成されている。レール３９０には、アーム３９１が取り付けられている。 22, a rail 390 extending along the Y direction (left and right direction in FIG. 22) is formed on the side of the cup 380 in the negative X direction (downward direction in FIG. 22). The rail 390 is formed, for example, from the outside of the cup 380 on the Y direction negative direction (left direction in FIG. 22) to the outside on the Y direction positive direction (right direction in FIG. 22). An arm 391 is attached to the rail 390.
　アーム３９１には、テンプレートＴ上に離型剤Ｓを供給する離型剤ノズル３９２が支持されている。アーム３９１は、ノズル駆動部３９３により、レール３９０上を移動自在である。これにより、離型剤ノズル３９２は、カップ３８０のＹ方向正方向側の外方に設置された待機部３９４からカップ３８０内のテンプレートＴの中心部上方まで移動できる。また、アーム３９１は、ノズル駆動部３９３によって昇降自在であり、離型剤ノズル３９２の高さを調整できる。 A release agent nozzle 392 that supplies the release agent S onto the template T is supported on the arm 391. The arm 391 is movable on the rail 390 by a nozzle driving unit 393. As a result, the release agent nozzle 392 can move from the standby portion 394 installed on the outer side of the cup 380 on the positive side in the Y direction to above the center portion of the template T in the cup 380. The arm 391 can be moved up and down by a nozzle driving unit 393, and the height of the release agent nozzle 392 can be adjusted.
　なお、例えば保持部材３７１の溝部３７２ａ内に、洗浄液、例えば有機溶剤を噴射する洗浄液ノズルを設けてもよい。この洗浄液ノズルからテンプレートＴの裏面Ｔ２に洗浄液を噴射することによって、当該裏面Ｔ２を洗浄することができる。 For example, a cleaning liquid nozzle that injects a cleaning liquid, for example, an organic solvent, may be provided in the groove 372 a of the holding member 371. By spraying the cleaning liquid onto the back surface T 2 of the template T from the cleaning liquid nozzle, the back surface T 2 can be cleaned.
　なお、離型剤塗布ユニット３２２の構成は、上述した離型剤塗布ユニット３２０の構成と同様であるので説明を省略する。 Note that the configuration of the release agent application unit 322 is the same as the configuration of the release agent application unit 320 described above, and thus the description thereof is omitted.
　次に、上述したリンスユニット３２１、３２３の構成について説明する。リンスユニット３２１は、図２３に示すように側面にテンプレートＴの搬入出口（図示せず）が形成されたケーシング４００を有している。 Next, the configuration of the rinse units 321 and 323 described above will be described. As shown in FIG. 23, the rinse unit 321 has a casing 400 in which a loading / unloading port (not shown) for the template T is formed on the side surface.
　ケーシング４００内の底面には、テンプレートＴを浸漬させる浸漬槽４０１が設けられている。浸漬槽４０１内には、テンプレートＴ上の離型剤Ｓをリンスするための有機溶剤が貯留されている。 An immersion tank 401 in which the template T is immersed is provided on the bottom surface of the casing 400. In the immersion tank 401, an organic solvent for rinsing the release agent S on the template T is stored.
　ケーシング４００内の天井面であって、浸漬槽４０１の上方には、テンプレートＴを保持する保持部４０２が設けられている。保持部４０２は、テンプレートＴの裏面Ｔ２の外周部を吸着保持するチャック４０３を有している。テンプレートＴは、その表面Ｔ１が上方を向くようにチャック４０３に保持される。チャック４０３は、昇降機構４０４により昇降できる。そして、テンプレートＴは、保持部４０２に保持された状態で浸漬槽４０１に貯留された有機溶剤に浸漬され、当該テンプレートＴ上の離型剤Ｓがリンスされる。 A holding part 402 that holds the template T is provided on the ceiling surface in the casing 400 and above the immersion tank 401. Holding portion 402, the outer peripheral portion of the rear surface T 2 of the template T has a chuck 403 for holding suction. Template T has a surface T 1 is held on the chuck 403 to face upward. The chuck 403 can be moved up and down by a lifting mechanism 404. And the template T is immersed in the organic solvent stored in the immersion tank 401 in the state hold | maintained at the holding | maintenance part 402, and the mold release agent S on the said template T is rinsed.
　保持部４０２は、チャック４０３に保持されたテンプレートＴの上方に設けられたガス供給部４０５を有している。ガス供給部４０５は、例えば窒素等の不活性ガスや乾燥空気などの気体ガスを下方、すなわちチャック４０３に保持されたテンプレートＴの表面Ｔ１に吹き付けることができる。これにより、浸漬槽４０１でリンスされたテンプレートＴの表面Ｔ１を乾燥させることができる。なお、リンスユニット３２１には、内部の雰囲気を排気する排気管（図示せず）が接続されている。 The holding unit 402 includes a gas supply unit 405 provided above the template T held by the chuck 403. The gas supply unit 405 can spray an inert gas such as nitrogen or a gas gas such as dry air downward, that is, on the surface T 1 of the template T held by the chuck 403. Thus, it is possible to dry the surface T 1 of the rinsing template T in the immersion bath 401. The rinse unit 321 is connected to an exhaust pipe (not shown) that exhausts the internal atmosphere.
　なお、リンスユニット３２３の構成は、上述したリンスユニット３２１の構成と同様であるので説明を省略する。 The configuration of the rinse unit 323 is the same as the configuration of the rinse unit 321 described above, and a description thereof will be omitted.
　次に、上述した前洗浄ユニット３３０、３４０の構成について説明する。前洗浄ユニット３３０は、図２４に示すように側面にテンプレートＴの搬入出口（図示せず）が形成されたケーシング４１０を有している。 Next, the configuration of the pre-cleaning units 330 and 340 described above will be described. As shown in FIG. 24, the pre-cleaning unit 330 has a casing 410 having a side surface (not shown) for carrying in / out of the template T.
　ケーシング４１０内には、テンプレートＴを吸着保持するチャック４１１が設けられている。チャック４１１は、テンプレートＴの表面Ｔ１が上方を向くように、その裏面Ｔ２を吸着保持する。チャック４１１の下方には、チャック駆動部４１２が設けられている。このチャック駆動部４１２は、ケーシング４１０内の底面に設けられ、Ｙ方向に沿って延伸するレール４１３上に取付けられている。このチャック駆動部４１２により、チャック４１１はレール４１３に沿って移動できる。 A chuck 411 that holds the template T by suction is provided in the casing 410. Chuck 411, the surface T 1 of the template T to face upward, suction-holds the rear surface T 2. A chuck drive unit 412 is provided below the chuck 411. The chuck driving unit 412 is provided on the bottom surface in the casing 410 and is mounted on a rail 413 extending along the Y direction. The chuck 411 can be moved along the rail 413 by the chuck driving unit 412.
　ケーシング４１０内の天井面であって、レール４１３の上方には、チャック４１１に保持されたテンプレートＴに紫外線を照射する紫外線照射部４１４が設けられている。紫外線照射部４１４は、図２５に示すようにＸ方向に延伸している。そして、テンプレートＴがレール４１３に沿って移動中に、紫外線照射部４１４から当該テンプレートＴの表面Ｔ１に紫外線を照射することで、テンプレートＴの表面Ｔ１全面に紫外線が照射される。 An ultraviolet irradiation unit 414 that irradiates the template T held by the chuck 411 with ultraviolet rays is provided on the ceiling surface in the casing 410 and above the rail 413. The ultraviolet irradiation unit 414 extends in the X direction as shown in FIG. Then, while the template T is moving along the rail 413, the surface T 1 of the template T is irradiated with ultraviolet rays from the ultraviolet irradiation unit 414, so that the entire surface T 1 of the template T is irradiated with ultraviolet rays.
　なお、前洗浄ユニット３４０の構成は、上述した前洗浄ユニット３３０の構成と同様であるので説明を省略する。 Note that the configuration of the pre-cleaning unit 340 is the same as the configuration of the pre-cleaning unit 330 described above, and a description thereof will be omitted.
　次に、上述した後洗浄ユニット３５０、３５１、３６０、３６１の構成について説明する。後洗浄ユニット３５０は、図２６に示すように側面にテンプレートＴの搬入出口（図示せず）が形成されたケーシング４２０を有している。 Next, the configuration of the above-described post-cleaning units 350, 351, 360, and 361 will be described. As shown in FIG. 26, the post-cleaning unit 350 includes a casing 420 having a loading / unloading port (not shown) for the template T formed on the side surface.
　ケーシング４２０内の底面には、テンプレートＴが載置される載置台４２１が設けられている。テンプレートＴは、その表面Ｔ１が上方を向くように載置台４２１の上面に載置される。載置台４２１内には、テンプレートＴを下方から支持し昇降させるための昇降ピン４２２が設けられている。昇降ピン４２２は、昇降駆動部４２３により上下動できる。載置台４２１の上面には、当該上面を厚み方向に貫通する貫通孔４２４が形成されており、昇降ピン４２２は、貫通孔４２４を挿通するようになっている。 A mounting table 421 on which the template T is mounted is provided on the bottom surface in the casing 420. Template T has a surface T 1 is placed on the top surface of the mounting table 421 to face upward. In the mounting table 421, elevating pins 422 for supporting the template T from below and elevating it are provided. The elevating pin 422 can be moved up and down by the elevating drive unit 423. A through hole 424 that penetrates the upper surface in the thickness direction is formed on the upper surface of the mounting table 421, and the elevating pin 422 is inserted through the through hole 424.
　図２７に示すように載置台４２１のＸ方向負方向（図２７の下方向）側には、Ｙ方向（図２７の左右方向）に沿って延伸するレール４３０が設けられている。レール４３０は、例えば載置台４２１のＹ方向負方向（図２７の左方向）側の外方からＹ方向正方向（図２７の右方向）側の外方まで形成されている。レール４３０には、アーム４３１が取り付けられている。 27, a rail 430 extending along the Y direction (left and right direction in FIG. 27) is provided on the mounting table 421 on the negative side in the X direction (downward direction in FIG. 27). For example, the rail 430 is formed from the outer side of the mounting table 421 on the Y direction negative direction (left direction in FIG. 27) to the outer side on the Y direction positive direction (right direction in FIG. 27). An arm 431 is attached to the rail 430.
　アーム４３１には、テンプレートＴ上に洗浄液を供給する洗浄液ノズル４３２が支持されている。洗浄液ノズル４３２は、例えばテンプレートＴの一辺寸法と同じかそれよりも長い、Ｘ方向に沿った細長形状を有している。なお、洗浄液には、例えば有機溶剤や純水が用いられ、有機溶剤としては、ＩＰＡ（イソプロピルアルコール）、ジブチルエーテル、シクロヘキサンなどが用いられる。 The arm 431 supports a cleaning liquid nozzle 432 for supplying a cleaning liquid onto the template T. The cleaning liquid nozzle 432 has, for example, an elongated shape along the X direction that is the same as or longer than one side dimension of the template T. For example, an organic solvent or pure water is used as the cleaning liquid, and IPA (isopropyl alcohol), dibutyl ether, cyclohexane, or the like is used as the organic solvent.
　アーム４３１は、ノズル駆動部４３３により、レール４３０上を移動自在である。これにより、洗浄液ノズル４３２は、載置台４２１のＹ方向正方向側の外方に設置された待機部４３４から載置台４２１上のテンプレートＴの上方まで移動でき、さらに当該テンプレートＴの表面Ｔ１上をテンプレートＴの辺方向に移動できる。また、アーム４３１は、ノズル駆動部４３３によって昇降自在であり、洗浄液ノズル４３２の高さを調整できる。 The arm 431 is movable on the rail 430 by the nozzle driving unit 433. Accordingly, the cleaning liquid nozzle 432 can move from the standby unit 434 installed on the outer side of the mounting table 421 on the Y direction positive direction side to above the template T on the mounting table 421, and further on the surface T 1 of the template T. Can be moved in the side direction of the template T. The arm 431 can be moved up and down by a nozzle driving unit 433, and the height of the cleaning liquid nozzle 432 can be adjusted.
　ケーシング４２０内の天井面であって、載置台４２１の上方には、テンプレートＴに紫外線を照射する紫外線照射部４３５が設けられている。紫外線照射部４３５は、載置台４２１に載置されたテンプレートＴの表面Ｔ１に対向してするように配置され、当該テンプレートＴの表面Ｔ１全面に紫外線を照射することができる。 An ultraviolet irradiation unit 435 that irradiates the template T with ultraviolet rays is provided on the ceiling surface in the casing 420 and above the mounting table 421. The ultraviolet irradiation unit 435 is disposed so as to face the surface T 1 of the template T placed on the mounting table 421, and can irradiate the entire surface T 1 of the template T with ultraviolet rays.
　なお、後洗浄ユニット３５１、３６０、３６１の構成は、上述した後洗浄ユニット３５０の構成と同様であるので説明を省略する。 Note that the configuration of the post-cleaning units 351, 360, and 361 is the same as the configuration of the post-cleaning unit 350 described above, and a description thereof will be omitted.
　なお、上述した加熱ユニット３３４、３３５、３４４、３４５の構成は、図２８に示すようにウェハ処理ステーション３における加熱ユニット４２、４３、５２、５３の構成と同様であるので説明を省略する。 The configuration of the heating units 334, 335, 344, and 345 described above is the same as the configuration of the heating units 42, 43, 52, and 53 in the wafer processing station 3 as shown in FIG.
　また、温度調節ユニット３３１、３３２、３４１、３４２の構成についても、上述した加熱ユニット３３４と同様の構成を有し、熱板１３５に代えて、温度調節板が用いられる。温度調節板の内部には、例えばペルチェ素子などの冷却部材が設けられており、温度調節板を設定温度に調節できる。また、この場合、加熱ユニット３３４における蓋体１４０を省略してもよい。 Also, the temperature control units 331, 332, 341, and 342 have the same configuration as the heating unit 334 described above, and a temperature control plate is used instead of the hot plate 135. A cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature. In this case, the lid 140 in the heating unit 334 may be omitted.
　本実施の形態にかかるインプリントシステム１は以上のように構成されている。次に、そのインプリントシステム１で行われるウェハ処理、テンプレート処理インプリント処理等について説明する。図２９は、これらウェハ処理、テンプレート処理及びインプリント処理の主な処理フローを示し、図３０は、各工程におけるウェハＷとテンプレートＴの状態を示している。 The imprint system 1 according to the present embodiment is configured as described above. Next, wafer processing, template processing imprint processing, and the like performed in the imprint system 1 will be described. FIG. 29 shows the main processing flow of these wafer processing, template processing, and imprint processing, and FIG. 30 shows the state of the wafer W and template T in each step.
　先ず、テンプレート搬送体２２によって、テンプレート搬入出ステーション５のカセット載置台８０上のテンプレートカセットＣＴからテンプレートＴが取り出され、テンプレート処理ステーション３００のトランジションユニット３３３に搬送される（図２９の工程Ｂ１）。 First, the template transfer member 22, the template T from the template cassette C T on the cassette mounting table 80 of the template unloading station 5 is extracted, is conveyed to the transition unit 333 of the template processing station 300 (Step B1 in FIG. 29) .
　その後、搬送ユニット３１０によって、テンプレートＴは、前洗浄ユニット３３０に搬送され、チャック４１１に吸着保持される。続いて、チャック駆動部４１２によってテンプレートＴをレール４１３に沿って移動させながら、紫外線照射部４１４から当該テンプレートＴに紫外線が照射される。こうして、テンプレートＴの表面Ｔ１全面に紫外線が照射され、図３０（ａ）に示すようにテンプレートＴの表面Ｔ１が洗浄される（図２９の工程Ｂ２）。 Thereafter, the template T is transported to the pre-cleaning unit 330 by the transport unit 310 and is sucked and held by the chuck 411. Subsequently, the template T is irradiated with ultraviolet rays from the ultraviolet irradiation unit 414 while moving the template T along the rails 413 by the chuck driving unit 412. Thus, ultraviolet light is irradiated on the surface T 1 the entire surface of the template T, the surface T 1 of the template T is cleaned as shown in FIG. 30 (a) (step B2 in FIG. 29).
　その後、搬送ユニット３１０によって、テンプレートＴは離型剤塗布ユニット３２０に搬送され、保持部材３７１に受け渡される。続いて、離型剤ノズル３９２をテンプレートＴの中心部上方まで移動させると共に、テンプレートＴを回転させる。そして、回転中のテンプレートＴ上に離型剤Ｓを供給し、遠心力により離型剤ＳをテンプレートＴ上で拡散させて、図３０（ｂ）に示すようにテンプレートＴの表面Ｔ１全面に離型剤Ｓを塗布する（図２９の工程Ｂ３）。 Thereafter, the transport unit 310 transports the template T to the release agent coating unit 320 and delivers it to the holding member 371. Subsequently, the release agent nozzle 392 is moved to above the center of the template T and the template T is rotated. Then, the release agent S is supplied onto the rotating template T, and the release agent S is diffused on the template T by centrifugal force, so that the entire surface T 1 of the template T as shown in FIG. A release agent S is applied (step B3 in FIG. 29).
　その後、搬送ユニット３１０によって、テンプレートＴは加熱ユニット３３４に搬送される。加熱ユニット３３４に搬入されたテンプレートＴは、昇降ピン１３２に受け渡され、載置台１３１に載置される。続いて、蓋体１４０が閉じられ、テンプレートＴは熱板１３５によって例えば２００℃に加熱される。所定時間経過後、図３０（ｃ）に示すようにテンプレートＴ上の離型剤Ｓが焼成される（図２９の工程Ｂ４）。 Thereafter, the template T is transported to the heating unit 334 by the transport unit 310. The template T carried into the heating unit 334 is transferred to the lifting pins 132 and placed on the placement table 131. Subsequently, the lid 140 is closed, and the template T is heated to, for example, 200 ° C. by the hot plate 135. After a predetermined time has elapsed, the release agent S on the template T is baked as shown in FIG. 30 (c) (step B4 in FIG. 29).
　その後、搬送ユニット３１０によって、テンプレートＴは温度調節ユニット２１１に搬送され、テンプレートＴが所定の温度に調節される。 Thereafter, the template T is conveyed to the temperature adjustment unit 211 by the conveyance unit 310, and the template T is adjusted to a predetermined temperature.
　その後、搬送ユニット３１０によって、テンプレートＴはリンスユニット３２１に搬送され、保持部４０２に保持される。続いて、保持部４０２を下降させ、テンプレートＴを浸漬槽４０１に貯留された有機溶剤に浸漬させる。所定時間経過すると、離型剤Ｓの未反応部のみが剥離し、図３０（ｄ）に示すようにテンプレートＴ上に転写パターンＣに沿った離型剤Ｓが成膜される（図２９の工程Ｂ５）。その後、保持部４０２を上昇させ、ガス供給部４０５から気体ガスをテンプレートＴに吹き付け、その表面Ｔ１を乾燥させる。なお、離型剤Ｓの未反応部とは、離型剤ＳがテンプレートＴの表面Ｔ１と化学反応して当該表面Ｔ１と吸着する部分以外をいう。 Thereafter, the transport unit 310 transports the template T to the rinse unit 321 and holds the template T in the holding unit 402. Subsequently, the holding unit 402 is lowered, and the template T is immersed in the organic solvent stored in the immersion tank 401. When a predetermined time elapses, only the unreacted portion of the release agent S is peeled off, and the release agent S along the transfer pattern C is formed on the template T as shown in FIG. Step B5). Then, raise the holding portion 402, blown from the gas supply unit 405 gas gas to the template T, drying the surface T 1. The unreacted part of the release agent S means a part other than the part where the release agent S chemically reacts with the surface T 1 of the template T and adsorbs to the surface T 1 .
　その後、搬送ユニット３１０によって、テンプレートＴはトランジションユニット３４３に搬送される。続いて、搬送ユニット７０によって、テンプレートＴはインプリント処理ステーション４に搬送される。ここで、上述した工程Ｂ１～Ｂ５を繰り返し行い、複数のテンプレートＴ上に離型剤Ｓを成膜し、複数のテンプレートＴが連続的にインプリント処理ステーション４に搬送される。このとき、インプリント処理ステーション４にテンプレートＴを搬送する前に、バッファカセット３１１において、離型剤Ｓが成膜されたテンプレートＴを一時的に保管してもよい。 Thereafter, the template T is transported to the transition unit 343 by the transport unit 310. Subsequently, the template T is transported to the imprint processing station 4 by the transport unit 70. Here, the steps B1 to B5 described above are repeated to form the release agent S on the plurality of templates T, and the plurality of templates T are continuously conveyed to the imprint processing station 4. At this time, the template T on which the release agent S is formed may be temporarily stored in the buffer cassette 311 before the template T is conveyed to the imprint processing station 4.
　その後、搬送ユニット７０によって、テンプレートＴはトランジションユニット６１に搬送される。続いて、インプリントユニット６０内のテンプレート搬送機構によって、テンプレートＴはインプリントユニット６０内に搬送される（図２９の工程Ｂ６）。このとき、テンプレート搬送機構によって、テンプレートＴの表裏面が反転される。すなわち、テンプレートＴの裏面Ｔ２が上方に向けられる。インプリントユニット６０に搬入されたテンプレートＴは、テンプレート保持部１７０のチャック１７１に吸着保持される。 Thereafter, the template T is transported to the transition unit 61 by the transport unit 70. Subsequently, the template T is transported into the imprint unit 60 by the template transport mechanism in the imprint unit 60 (step B6 in FIG. 29). At this time, the front and back surfaces of the template T are reversed by the template transport mechanism. That is, the rear surface T 2 of the template T is directed upwards. The template T carried into the imprint unit 60 is sucked and held by the chuck 171 of the template holding unit 170.
　このようにテンプレート処理ステーション３００においてテンプレートＴに所定の処理を行い、インプリントユニット６０へテンプレートＴを搬送中に、ウェハ搬入出ステーション２からウェハ処理ステーション３にウェハＷが搬送される（図２９の工程Ｂ７）。その後、ウェハ処理ステーション３において、ウェハＷ上に第１のレジスト液が塗布された後（図２９の工程Ｂ８）、ウェハＷ上の第１のレジスト液が焼成され、図３０（ｅ）に示すようにウェハＷ上に第１のレジスト膜Ｒ１が形成される（図２９の工程Ｂ９）。その後、複数のウェハＷが連続的にインプリント処理ステーション４に搬送され、各ウェハＷはインプリントユニット６０に搬送される（図２９の工程Ｂ１０）。なお、これら工程Ｂ７～Ｂ１０は、前記実施の形態における工程Ａ２～Ａ５と同様であるので、詳細な説明を省略する。 In this way, predetermined processing is performed on the template T in the template processing station 300, and the wafer W is transferred from the wafer carry-in / out station 2 to the wafer processing station 3 while the template T is being transferred to the imprint unit 60 (step of FIG. 29). B7). Thereafter, in the wafer processing station 3, after the first resist solution is applied on the wafer W (step B8 in FIG. 29), the first resist solution on the wafer W is baked, as shown in FIG. 30 (e). the first resist film R 1 is formed on the wafer W as (step B9 in Fig. 29). Thereafter, the plurality of wafers W are continuously transferred to the imprint processing station 4 and each wafer W is transferred to the imprint unit 60 (step B10 in FIG. 29). Note that these steps B7 to B10 are the same as the steps A2 to A5 in the above embodiment, and thus detailed description thereof is omitted.
　その後、インプリントユニット６０において、図３０（ｆ）に示すようにウェハＷ上に第２のレジスト膜Ｒ２が形成され（図２９の工程Ｂ１１）、図３０（ｇ）に示すようにテンプレートＴの表面Ｔ１がウェハＷ上の第２のレジスト膜Ｒ２に押し付けられて、ウェハＷ上の第２のレジスト膜Ｒ２にテンプレートＴの転写パターンＣが転写され、レジストパターンＰが形成される（図２９の工程Ｂ１２）。その後、図３０（ｈ）に示すようにテンプレートＴを上昇させて、ウェハＷ上にレジストパターンＰが形成された後、ウェハＷはインプリントユニット６０から搬出され、ウェハカセットＣＷに戻される（図２９の工程Ｂ１３）。なお、これら工程Ｂ１１～Ｂ１３は、前記実施の形態における工程Ａ６～Ａ８と同様であるので、詳細な説明を省略する。また、工程Ｂ１３を行った後、前記実施の形態と同様に、図３０（ｉ）に示すようにウェハＷ上の残存膜Ｌを除去してもよい。 Then, the imprint unit 60, the second resist film R 2 is formed on the wafer W as shown in FIG. 30 (f) (step B11 in FIG. 29), the template T as shown in FIG. 30 (g) surface T 1 is pressed against the resist film R 2 a second on the wafer W, the transfer pattern C of the template T is transferred to the second resist film R 2 on the wafer W, the resist pattern P is formed ( Step B12 in FIG. 29). Thereafter, as shown in FIG. 30 (h), after the template T is raised and the resist pattern P is formed on the wafer W, the wafer W is unloaded from the imprint unit 60 and returned to the wafer cassette CW (FIG. 30). 29 step B13). Note that these steps B11 to B13 are the same as the steps A6 to A8 in the above-described embodiment, and thus detailed description thereof is omitted. Further, after step B13, the remaining film L on the wafer W may be removed as shown in FIG.
　以上の工程Ｂ１０～Ｂ１３を繰り返し行い、一のテンプレートＴを用いて、複数のウェハＷ上にレジストパターンＰをそれぞれ形成する。そして、所定枚数のウェハＷに対して工程Ｂ１０～Ｂ１３が行われると、テンプレートＴが交換される。すなわち、テンプレート搬送機構によってテンプレートＴの表裏面が反転された後、テンプレートＴはインプリントユニット６０から搬出され、トランジションユニット６１に搬送される（図２９の工程Ｂ１４）。 The above steps B10 to B13 are repeated, and a resist pattern P is formed on each of the plurality of wafers W by using one template T. When the processes B10 to B13 are performed on the predetermined number of wafers W, the template T is replaced. That is, after the front and back surfaces of the template T are reversed by the template transport mechanism, the template T is transported from the imprint unit 60 and transported to the transition unit 61 (step B14 in FIG. 29).
　その後、テンプレートＴは、搬送ユニット７０によってテンプレート処理ステーション５のトランジションユニット３４３に搬送された後、搬送ユニット３１０によって後洗浄ユニット３５０に搬送される。後洗浄ユニット３５０に搬送されたテンプレートＴは、昇降ピン４２２に受け渡され、載置台４２１に載置される。続いて、紫外線照射部４３５からテンプレートＴの表面Ｔ１全面に紫外線が照射される。そうすると、テンプレートＴ上の離型剤Ｓが気化してそのほとんどが除去される。所定時間経過後、紫外線の照射を停止し、洗浄液ノズル４３２をテンプレートＴの辺方向に移動させながら、当該テンプレートＴ上に残存する離型剤Ｓに対して洗浄液を供給する。こうして、テンプレートＴ上の離型剤Ｓが除去され、表面Ｔ１が洗浄される（図２９の工程Ｂ１５）。なお、洗浄液として純水を用いる場合、テンプレートＴの表面Ｔ１にウォーターマークが付着するのを避けるため、その後有機溶剤であるＩＰＡを用いてさらに洗浄するのが好ましい。なお、後洗浄ユニット３５０では、テンプレートＴの表面Ｔ１だけでなく裏面Ｔ２も洗浄してもよい。 Thereafter, the template T is transported to the transition unit 343 of the template processing station 5 by the transport unit 70 and then transported to the post-cleaning unit 350 by the transport unit 310. The template T conveyed to the post-cleaning unit 350 is transferred to the lifting pins 422 and placed on the placing table 421. Subsequently, ultraviolet rays are irradiated from the ultraviolet irradiation unit 435 to the entire surface T 1 of the template T. Then, the release agent S on the template T is vaporized and most of it is removed. After the elapse of a predetermined time, the irradiation of ultraviolet rays is stopped, and the cleaning liquid is supplied to the release agent S remaining on the template T while moving the cleaning liquid nozzle 432 in the side direction of the template T. Thus, the release agent S on the template T is removed, the surface T 1 is washed (step B15 in FIG. 29). In the case of using pure water as a cleaning solution, to avoid water marks on the surface T 1 of the template T is attached, preferably then further washed with IPA is an organic solvent. In the post-cleaning unit 350, the rear surface T 2 may also be washed well surface T 1 of the template T.
　その後、搬送ユニット３１０によって、テンプレートＴは、検査ユニット３５２に搬送される。そして、検査ユニット３５２において、例えば干渉縞の観察等により、テンプレートＴの表面Ｔ１が検査される（図２９の工程Ｂ１６）。なお、検査ユニット３５２では、テンプレートＴの表面Ｔ１だけでなく裏面Ｔ２も検査してもよい。 Thereafter, the template T is transported to the inspection unit 352 by the transport unit 310. Then, in the inspection unit 352, for example, by observation or the like of the interference fringes, the surface T 1 of the template T is inspected (step B16 in FIG. 29). In the inspection unit 352, the rear surface T 2 may also be examined not only on the surface T 1 of the template T.
　その後、テンプレートＴは、搬送ユニット３１０によってトランジションユニット３３３に搬送され、テンプレート搬送体８２によってテンプレートカセットＣＴに戻される。なお、検査ユニット３５２の検査結果が良好な場合、例えばテンプレートＴの表面Ｔ１が適切に洗浄され、且つその表面Ｔ１が劣化していない場合には、テンプレートカセットＣＴに戻されたテンプレートＴは、インプリントユニット１内で再度使用される。一方、検査ユニット３５２の検査結果が悪い場合、例えばテンプレートＴの表面Ｔ１が劣化している場合には、テンプレートＴはインプリントユニット１の外部に搬出される。 Thereafter, the template T is carried to the transit unit 333 by the transport unit 310, and returned to the template cassette C T by the template carrier 82. In the case the test result of the inspection unit 352 is good, for example, be surface T 1 it is properly cleaned of the template T, and if the surface T 1 is not deteriorated, the template T returned to the template cassette C T Are used again in the imprint unit 1. On the other hand, if the inspection result of the inspection unit 352 is bad, for example if the surface T 1 of the template T is degraded, the template T is carried to the outside of the imprint unit 1.
　このようにして、インプリントシステム１において、テンプレートＴを連続的に交換しつつ、複数のウェハＷに対して所定のレジストパターンＰが連続的に形成される。 Thus, in the imprint system 1, the predetermined resist pattern P is continuously formed on the plurality of wafers W while the template T is continuously replaced.
　以上の実施の形態によれば、テンプレート処理ステーション３００内に、離型剤処理ブロックを構成する処理ブロックＦ１～Ｆ４が設けられているので、インプリントシステム１内でテンプレートＴ上に離型剤Ｓを成膜しつつ、テンプレートＴをインプリントユニット６０に連続的に供給できる。これによって、例えばテンプレートＴが劣化する前、あるいは複数のウェハＷ上に異なるレジストパターンＰを形成する場合でも、インプリントユニット６０内のテンプレートＴを連続して効率よく交換することができる。したがって、複数のウェハＷに対して所定のレジストパターンＰを適切に形成することができる。 According to the above embodiment, since the processing blocks F1 to F4 constituting the release agent processing block are provided in the template processing station 300, the release agent S is formed on the template T in the imprint system 1. The template T can be continuously supplied to the imprint unit 60 while forming the film. Thereby, for example, even when the resist pattern P is formed on the plurality of wafers W before the template T deteriorates, the template T in the imprint unit 60 can be exchanged continuously and efficiently. Therefore, the predetermined resist pattern P can be appropriately formed on the plurality of wafers W.
　また、テンプレート処理ステーション３００内には、テンプレート洗浄ブロックを構成する処理ブロックＦ５、Ｆ６が設けられ、例えば後洗浄ユニット３５０、３５１、３６０、３６１が設けられているので、インプリントシステム１内で使用済みのテンプレートＴの表面Ｔ１を洗浄することができる。これによって、インプリントユニット１内でテンプレートＴを再度使用することができる。 In the template processing station 300, processing blocks F5 and F6 constituting a template cleaning block are provided. For example, post-cleaning units 350, 351, 360, and 361 are provided and used in the imprint system 1. it is possible to clean the surface T 1 of the pre-template T. As a result, the template T can be used again in the imprint unit 1.
　さらに、テンプレート処理ステーション３００内に、検査ユニット３５２、３６２が設けられているので、洗浄後のテンプレートＴの表面Ｔ１を検査することができる。そして、この検査結果に基づいて、例えば当該テンプレートＴをインプリントユニット１内で再度使用したり、あるいはインプリントユニット１の外部に搬出する等を決定することができる。これによって、テンプレートＴを有効利用することができると共に、インプリントユニット１内で不良なテンプレートＴを使用することが無くなるので、複数のウェハＷ上に所定のレジストパターンＰを適切に形成することができる。 Furthermore, the template processing station 300, since the inspection unit 352 and 362 are provided, it is possible to inspect the surface T 1 of the template T after washing. Based on the inspection result, for example, the template T can be used again in the imprint unit 1 or can be determined to be carried out of the imprint unit 1. As a result, the template T can be used effectively, and a defective template T is not used in the imprint unit 1, so that a predetermined resist pattern P can be appropriately formed on the plurality of wafers W. .
　なお、以上の実施の形態のテンプレート処理ステーション３００には、離型剤処理ブロックを構成する処理ブロックＦ１～Ｆ４と、テンプレート洗浄ブロックを構成する処理ブロックＦ５、Ｆ６の両方が設けられていたが、例えば図３１に示すように、テンプレート処理ステーション３００内に離型剤処理ブロックである処理ブロックＦ１～Ｆ４のみを設けてもよい。この場合、前記実施の形態の工程Ｂ１５、Ｂ１６が省略され、使用済みのテンプレートＴの表面Ｔ１の洗浄はインプリントシステム１の外部で行われる。また、かかる場合、処理ブロックＦ３、Ｆ４をそれぞれ処理ブロックＦ５、Ｆ６の位置に移動させて配置し、処理ブロックＦ３、Ｆ４の位置にテンプレートＴの受け渡しを行うためのトランジションユニットをそれぞれ設けてもよい。 In the template processing station 300 of the above embodiment, both the processing blocks F1 to F4 constituting the release agent processing block and the processing blocks F5 and F6 constituting the template cleaning block are provided. For example, as shown in FIG. 31, only the processing blocks F1 to F4 that are release agent processing blocks may be provided in the template processing station 300. In this case, step B15 of the embodiment, B16 is omitted, the cleaning of the surface T 1 of the used template T is performed outside the imprint system 1. In such a case, the processing blocks F3 and F4 may be moved to the positions of the processing blocks F5 and F6, respectively, and a transition unit for transferring the template T may be provided at the positions of the processing blocks F3 and F4. .
　以上の実施の形態のインプリントシステム１では、ウェハ搬入出ステーション２、ウェハ処理ステーション３、インプリント処理ステーション４、テンプレート処理ステーション３００、テンプレート搬入出ステーション５が水平方向に並べて配置されていたが、図３２～図３６に示すようにテンプレート処理ステーション３００は、ウェハ処理ステーション３の上方に積層されて配置されていてもよい。また、テンプレート搬入出ステーション５は、ウェハ搬入出ステーション２の上方に積層されて配置されていてもよい。かかる場合、インプリントシステム１の占有面積を小さくすることができ、その製造コストを低廉化することができる。 In the imprint system 1 of the above embodiment, the wafer carry-in / out station 2, the wafer processing station 3, the imprint processing station 4, the template processing station 300, and the template carry-in / out station 5 are arranged side by side in the horizontal direction. As shown in FIG. 32 to FIG. 36, the template processing station 300 may be stacked and disposed above the wafer processing station 3. Further, the template loading / unloading station 5 may be stacked and arranged above the wafer loading / unloading station 2. In such a case, the area occupied by the imprint system 1 can be reduced, and the manufacturing cost can be reduced.
　なお、テンプレート処理ステーション３００及びテンプレート搬入出ステーション５と、ウェハ処理ステーション３及びウェハ搬入出ステーション２との上下関係は本実施の形態に限定されず、ウェハ処理ステーション３及びウェハ搬入出ステーション２を上層に配置してもよい。但し、インプリントユニット６０内では、テンプレートＴがウェハＷの上方に配置されるので、本実施の形態のようにテンプレート処理ステーション３００及びテンプレート搬入出ステーション５を上層に配置するのが好ましい。 The vertical relationship between the template processing station 300 and the template carry-in / out station 5 and the wafer processing station 3 and the wafer carry-in / out station 2 is not limited to the present embodiment, and the wafer processing station 3 and the wafer carry-in / out station 2 You may arrange in. However, since the template T is disposed above the wafer W in the imprint unit 60, it is preferable to dispose the template processing station 300 and the template carry-in / out station 5 in the upper layer as in the present embodiment.
　また、本実施の形態においても、テンプレート処理ステーション３００内に、離型剤処理ブロックである処理ブロックＦ１～Ｆ４のみを設け、テンプレート洗浄ブロックを構成する処理ブロックＦ５、Ｆ６を省略してもよい。この場合、前記実施の形態の工程Ｂ１５、Ｂ１６が省略され、使用済みのテンプレートＴの表面Ｔ１の洗浄はインプリントシステム１の外部で行われる。 Also in this embodiment, only the processing blocks F1 to F4 which are release agent processing blocks may be provided in the template processing station 300, and the processing blocks F5 and F6 constituting the template cleaning block may be omitted. In this case, step B15 of the embodiment, B16 is omitted, the cleaning of the surface T 1 of the used template T is performed outside the imprint system 1.
　なお、これらウェハ搬入出ステーション２、ウェハ処理ステーション３、インプリント処理ステーション４、テンプレート処理ステーション３００、テンプレート搬入出ステーション５の構成は、前記実施の形態と同様であるので説明を省略する。 Note that the configurations of the wafer carry-in / out station 2, the wafer processing station 3, the imprint processing station 4, the template processing station 300, and the template carry-in / out station 5 are the same as those in the above-described embodiment, and thus description thereof is omitted.
　以上の実施の形態では、テンプレート処理ステーション３００において、テンプレートＴ上に離型剤Ｓを塗布した後、当該離型剤Ｓを加熱して焼成していたが、離型剤Ｓを焼成する代わりに光を照射してもよい。かかる場合、テンプレートＴ上の離型剤Ｓに対して、波長が例えば３５０ｎｍ～２５００ｎｍの光が照射される。そうすると、テンプレートＴの表面Ｔ１と離型剤Ｓの活性基を強固且つ密に化学結合させることができ、テンプレートＴの表面Ｔ１と離型剤Ｓとの密着性が向上する。すなわち、テンプレートＴの表面Ｔ１に離型剤Ｓを短時間で密着させることができる。 In the above embodiment, after applying the release agent S on the template T in the template processing station 300, the release agent S is heated and baked, but instead of baking the release agent S. You may irradiate light. In such a case, the release agent S on the template T is irradiated with light having a wavelength of, for example, 350 nm to 2500 nm. As a result, the surface T 1 of the template T and the active group of the release agent S can be chemically and strongly bonded, and the adhesion between the surface T 1 of the template T and the release agent S is improved. In other words, it can be brought into close contact with the surface T 1 of the template T of the release agent S in a short time.
　また、テンプレート処理ステーション３００において、テンプレートＴ上に離型剤Ｓを塗布した後、離型剤Ｓを焼成する代わりにアルコール処理をしてもよい。かかる場合、テンプレートＴ上の離型剤Ｓにアルコールが塗布される。そうすると、離型剤ＳがテンプレートＴの表面Ｔ１と強固且つ密に化学反応し、テンプレートＴの表面Ｔ１と離型剤Ｓとの密着性が向上する。なお、アルコールはアルコール類であればよく、エタノール以外の他のアルコールを用いてもよい。例えばメタノール、プローパノール、ブタノール、ペンタノール、ヘキサノール、ヘプタノールを用いてもよく、あるいはこれらのアルコールの混合物を用いてもよい。また、アルコールの濃度は特に限定されないが、１００％であることが好ましい。 In addition, after applying the release agent S on the template T in the template processing station 300, an alcohol treatment may be performed instead of baking the release agent S. In such a case, alcohol is applied to the release agent S on the template T. Then, the release agent S is firmly and closely chemically react with the surface T 1 of the template T, thereby improving adhesion between the surfaces T 1 and the release agent S of the template T. In addition, alcohol should just be alcohols and you may use alcohol other than ethanol. For example, methanol, propanol, butanol, pentanol, hexanol, heptanol may be used, or a mixture of these alcohols may be used. The concentration of alcohol is not particularly limited, but is preferably 100%.
　以上の実施の形態のインプリントシステム１において、各処理ユニットの構成は前記実施の形態に限定されず、各処理を行うことができる構成であれば、種々の構成を取り得る。例えば以上の実施の形態のリンスユニット３２１、３２３では、浸漬層４０１に貯留された有機溶剤にテンプレートＴを浸漬することで離型剤Ｓをリンスしていたが、図２０及び図２２に示した離型剤塗布ユニット３２０と同様の構成を有するリンスユニットを用いてもよい。かかる場合、離型剤塗布ユニット３２０の離型剤ノズル３９２に代えて、テンプレートＴ上に離型剤Ｓのリンス液としての有機溶剤を供給するリンス液ノズルが用いられる。そして、このリンスユニットでは、回転中のテンプレートＴ上に有機溶剤が供給し、テンプレートＴの表面Ｔ１全面をリンスする。所定時間経過すると、離型剤Ｓの未反応部のみが剥離し、テンプレートＴ上に転写パターンＣに沿った離型剤Ｓが成膜される。その後、有機溶剤の供給を停止した後、さらにテンプレートＴを回転させ続け、その表面Ｔ１を振り切り乾燥させる。このようにして、テンプレートＴ上の離型剤Ｓがリンスされる。 In the imprint system 1 of the above embodiment, the configuration of each processing unit is not limited to the above-described embodiment, and various configurations can be adopted as long as each processing can be performed. For example, in the rinse units 321 and 323 according to the above-described embodiments, the mold release agent S is rinsed by immersing the template T in the organic solvent stored in the immersion layer 401, as shown in FIGS. 20 and 22. A rinse unit having the same configuration as the release agent coating unit 320 may be used. In this case, instead of the release agent nozzle 392 of the release agent application unit 320, a rinse liquid nozzle that supplies an organic solvent as a rinse liquid of the release agent S onto the template T is used. And in this rinsing unit, an organic solvent is supplied onto the template T during rotation, to rinse the surface T 1 the entire surface of the template T. When a predetermined time elapses, only the unreacted portion of the release agent S is peeled off, and the release agent S along the transfer pattern C is formed on the template T. Then, after stopping the supply of the organic solvent, it continues to further rotate the template T, drying finishing off the surface T 1. In this way, the release agent S on the template T is rinsed.
　前記した実施の形態では、図１３、図２９のフローでも示したように、ウェハＷ上に第１のレジスト膜Ｒ１が形成された後は、インプリント処理ステーション４にウェハＷが搬送され、その後第２のレジスト膜Ｒ２が形成される。 In the embodiment described above, as shown also in the flow of FIG. 13, FIG. 29, after the first resist film R 1 is formed on the wafer W is the wafer W is conveyed to the imprint processing station 4, then the second resist film R 2 is formed.
　しかしながら、テンプレートＴを第２のレジスト膜Ｒ２に接触させて転写パターンＣを転写した際に、テンプレートＴの表面に離型剤Ｓが成膜されていても、第２のレジスト膜Ｒ２がテンプレートＴ側に付着する可能性も否定できない。かかる場合に鑑みて、第２のレジスト膜Ｒ２のウェハＷ側への密着性、定着生を向上させる処理を、第２のレジスト膜Ｒ２の形成前に予め行なっておくことが好ましい。 However, when the template T to transfer the transfer pattern C in contact with a second resist film R 2, even if the release agent S is formed on the surface of the template T, the second resist film R 2 is The possibility of adhering to the template T side cannot be denied. In view of such a case, adhesion to the second resist film R 2 of the wafer W side, the processing for improving the fixing production, it is preferable to previously performed before the formation of the second resist film R 2.
　たとえば第２のレジスト膜Ｒ２の材料が、たとえばＵＶ硬化性樹脂の場合、第１のレジスト膜Ｒ１の表面に、当該ＵＶ硬化性樹脂との密着性を向上させる、シランカップリング剤などの密着剤を塗布して成膜しておくことが好ましい。このような塗布処理は、図１３、図２９のフローに即して言えば、たとえば第１のレジスト液を焼成した後（工程Ａ４、工程Ｂ９の後）、に行なうとよい。 For example, when the material of the second resist film R 2 is, for example, a UV curable resin, the surface of the first resist film R 1 is improved in adhesion to the UV curable resin, such as a silane coupling agent. It is preferable to form a film by applying an adhesive. Such a coating process may be performed, for example, after the first resist solution is baked (after step A4 and step B9), in accordance with the flow of FIGS.
　そしてそのような密着剤を塗布するにあたっては、第１のレジスト膜Ｒ１を形成する第１のレジスト液の塗布を行なった、図６に示したような塗布ユニット３０～３３と同じ構成を持った塗布装置を用いることができる。そしてそのように密着剤を塗布した後、必要に応じてウェハＷを加熱し、さらには必要に応じて冷却し、その後にインプリントユニット６０に搬入し、以後図１３、図２９に示したフローと同様に、第２のレジスト膜Ｒ２の形成処理（工程Ａ６、工程Ｂ１１）を実施すればよい。 In applying such an adhesive, the first resist solution for forming the first resist film R1 is applied and has the same configuration as the application units 30 to 33 as shown in FIG. A coating device can be used. After applying the adhesive as described above, the wafer W is heated as necessary, further cooled as necessary, and then carried into the imprint unit 60. Thereafter, the flow shown in FIGS. Similarly, the second resist film R 2 in forming process (step A6, step B11) may be carried out.
　またそのように第１のレジスト膜Ｒ１の表面に密着剤を成膜する際、前記した塗布ユニット３０のような液体を塗布する装置ではなく、密着剤の蒸気をウェハＷ表面に供給して成膜するようにしてもよい。 Also during the formation so the adhesion agent in the first resist film R 1 of the surface, rather than a device for applying a liquid such as coating unit 30 described above, the vapor of the adhesion agent is supplied to the wafer W surface A film may be formed.
　図３７は、その際に使用する密着剤の塗布ユニットとしての成膜ユニット４５０の構成の概略を示している。この成膜ユニット４５０は、たとえば塗布ユニット３０～３３の一部に代えて、基板処理ステーション３に搭載される。 FIG. 37 shows an outline of the configuration of a film forming unit 450 as a coating unit for the adhesive used at that time. The film forming unit 450 is mounted on the substrate processing station 3, for example, instead of a part of the coating units 30 to 33.
　成膜ユニット４５０は、図３７に示すようにウェハＷが載置される載置台４６０と、当該載置台４６０の上方に設けられた蓋体４６１とを有している。蓋体４６１は、例えば昇降機構（図示せず）によって鉛直方向に移動自在に構成されている。また、蓋体４６１の下面は開口している。そして、蓋体４６１と載置台４６０とが一体となって、密閉された処理空間Ｋを形成できるようになっている。 As shown in FIG. 37, the film forming unit 450 includes a mounting table 460 on which the wafer W is mounted, and a lid 461 provided above the mounting table 460. The lid body 461 is configured to be movable in the vertical direction by, for example, an elevating mechanism (not shown). Further, the lower surface of the lid 461 is open. The lid 461 and the mounting table 460 are integrated to form a sealed processing space K.
　載置台４６０には、ウェハＷの表面（たとえば第１のレジスト膜Ｒ１の形成面）が上方を向くように当該ウェハＷが載置される。載置台４６０の上面には、ウェハＷの温度を制御する温度制御板４７０が設けられている。温度制御板４７０は、例えばペルチェ素子などを内蔵し、ウェハＷを所定の温度に調節できる。載置台４６０内には、ウェハＷを下方から支持し昇降させるための昇降ピン４７１が設けられている。昇降ピン４７１は、昇降駆動部４７２により上下動できる。載置台４６０の上面には、当該上面を厚み方向に貫通する貫通孔４７３が形成されおり、昇降ピン４７１は、貫通孔４７３を挿通するようになっている。 On the mounting table 460, the wafer W is mounted such that the surface of the wafer W (for example, the formation surface of the first resist film R1) faces upward. A temperature control plate 470 that controls the temperature of the wafer W is provided on the upper surface of the mounting table 460. The temperature control plate 470 includes a Peltier element, for example, and can adjust the wafer W to a predetermined temperature. In the mounting table 460, lifting pins 471 for supporting the wafer W from below and lifting it are provided. The elevating pin 471 can be moved up and down by an elevating drive unit 472. A through hole 473 that penetrates the upper surface in the thickness direction is formed on the upper surface of the mounting table 460, and the elevating pin 471 is inserted through the through hole 473.
　また、蓋体４６１の天井面には、ウェハＷ上に密着剤の蒸気と水蒸気を供給するガス供給管４９０が設けられている。ガス供給管４９０には、密着剤の蒸気を供給する密着剤供給源４９１と、水蒸気を供給する水蒸気供給源４９２が接続されている。また、ガス供給管４９０には、密着剤供給源４９１から供給される密着剤の蒸気と、水蒸気供給源４９２から供給される水蒸気の流れを制御するバルブや流量調節部等を含む供給機器群４９３が設けられている。 Further, a gas supply pipe 490 that supplies vapor and water vapor of the adhesive onto the wafer W is provided on the ceiling surface of the lid 461. The gas supply pipe 490 is connected to an adhesion agent supply source 491 that supplies vapor of the adhesion agent and a water vapor supply source 492 that supplies water vapor. In addition, the gas supply pipe 490 includes a supply device group 493 including a valve, a flow rate control unit, and the like that control the flow of the adhesive agent supplied from the adhesive agent supply source 491 and the water vapor supplied from the water vapor supply source 492. Is provided.
　密着剤供給源４９１は、内部に液体状の密着剤を貯留している。また、密着剤剤供給源４９１には、当該密着剤供給源４９１内に窒素ガスを供給するガス供給管（図示せず）が接続されている。密着剤供給源４９１では、内部に窒素ガスが供給されることで液体状の密着剤が気化して、離型剤の蒸気が生成される。この密着剤の蒸気は、前記窒素ガスをキャリアガスとしてガス供給管４９０に供給さる。 The adhesive agent supply source 491 stores a liquid adhesive agent therein. Further, a gas supply pipe (not shown) for supplying nitrogen gas into the adhesive agent supply source 491 is connected to the adhesive agent supply source 491. In the adhesive agent supply source 491, the liquid adhesive agent is vaporized by supplying nitrogen gas therein, and a release agent vapor is generated. The adhesion agent vapor is supplied to the gas supply pipe 490 using the nitrogen gas as a carrier gas.
　水蒸気供給源４９２は、例えば内部に水を貯留している。そして、例えばこの水を加熱して気化させて、水蒸気が生成される。 The water vapor supply source 492 stores, for example, water therein. For example, this water is heated and vaporized to generate water vapor.
　蓋体４６１の側面には、処理空間Ｋの雰囲気を排気する排気管４９４が接続されている。排気管４９４には、処理空間Ｋの雰囲気を真空引きする排気ポンプ４９５が接続されている。 An exhaust pipe 494 that exhausts the atmosphere of the processing space K is connected to the side surface of the lid 461. An exhaust pump 495 that evacuates the atmosphere of the processing space K is connected to the exhaust pipe 494.
　かかる構成を有する成膜ユニット４５０を用いて、密着剤を第１のレジスト膜Ｒ１の表面に成膜するには、たとえば図１３に示した工程Ａ４、図２９に示した工程Ｂ９の後に、ウェハＷが塗布ユニット４５０に搬送される。搬送されたウェハＷは、昇降ピン４７１に受け渡され、載置台４６０に載置される。このとき、載置台４６０上のウェハＷは、温度制御板４７０によって所定の温度、例えば５０℃に温度調節される。続いて、蓋体４６１が下降し、当該蓋体４６１と載置台４６０とで密閉された処理空間Ｋが形成される。その後、ガス供給管４９０から処理空間Ｋに密着剤の蒸気が供給される。供給された密着剤の蒸気は、ウェハＷの表面上に堆積する。その後、ガス供給管４９０から処理空間Ｋに水蒸気が供給され、当該水蒸気はウェハＷ上に堆積した密着剤に供給される。 In order to form an adhesive on the surface of the first resist film R1 using the film forming unit 450 having such a configuration, for example, after the process A4 shown in FIG. 13 and the process B9 shown in FIG. The wafer W is transferred to the coating unit 450. The transferred wafer W is transferred to the raising / lowering pins 471 and mounted on the mounting table 460. At this time, the temperature of the wafer W on the mounting table 460 is adjusted to a predetermined temperature, for example, 50 ° C. by the temperature control plate 470. Subsequently, the lid body 461 is lowered, and a processing space K sealed by the lid body 461 and the mounting table 460 is formed. Thereafter, the vapor of the adhesive is supplied from the gas supply pipe 490 to the processing space K. The supplied adhesive agent vapor is deposited on the surface of the wafer W. Thereafter, water vapor is supplied from the gas supply pipe 490 to the processing space K, and the water vapor is supplied to the adhesion agent deposited on the wafer W.
　水蒸気が供給されるとウェハＷ上に堆積した密着剤の分子が加水分解され、さらにウェハＷの表面と密着剤分子が脱水縮合により結合される。これによってウェハＷ上に形成された第１のレジスト膜Ｒ１と、その上に形成される第２のレジスト膜Ｒ２との密着性が向上する。なお、ウェハＷ上に密着剤を成膜した後、処理空間Ｋの雰囲気を不活性ガス、例えば窒素ガスに置換してもよい。 When water vapor is supplied, the molecules of the adhesion agent deposited on the wafer W are hydrolyzed, and the surface of the wafer W and the adhesion agent molecules are bonded by dehydration condensation. Thus the first resist film R 1 formed on the wafer W, so as to improve the adhesive property between the second resist film R 2 is formed thereon. In addition, after depositing the adhesive on the wafer W, the atmosphere in the processing space K may be replaced with an inert gas, for example, nitrogen gas.
　このように密着剤の蒸気を供給して、ウェハＷ表面に密着剤を成膜する方式によれば、液体の密着剤を塗布して成膜する場合と比較すると、リンスする必要がなく、またより均一に成膜することが可能である。 Thus, according to the method of supplying the adhesion agent vapor and forming the adhesion agent on the surface of the wafer W, it is not necessary to rinse as compared with the case where the film is formed by applying the liquid adhesion agent. It is possible to form a film more uniformly.
　なお上記した例では、載置台４６０上のウェハＷは、温度制御板４７０によって所定の温度、例えば５０℃に温度調節されていたが、必ずしもそのように常温よりも高い温度にウェハＷを温度調整する必要がなく、常温、たとえば２０℃～２５℃のまま成膜してもよい。 In the example described above, the temperature of the wafer W on the mounting table 460 is adjusted to a predetermined temperature, for example, 50 ° C. by the temperature control plate 470. However, the temperature of the wafer W is necessarily adjusted to a temperature higher than normal temperature. The film may be formed at room temperature, for example, 20 ° C. to 25 ° C.
　また上記した例では、積極的に水蒸気を供給して加水分解を促進するようにしたが、そのように積極的に水蒸気を供給しなくとも、周囲の雰囲気中の水分によって、加水分解が行なわれ、前記した脱水縮合による結合反応は実現される。 In the above example, the steam is actively supplied to promote the hydrolysis. However, the hydrolysis is performed by the moisture in the surrounding atmosphere even if the steam is not actively supplied. The coupling reaction by dehydration condensation described above is realized.
　なお第１のレジスト膜Ｒ１の塗布にあたっても、レジスト液の蒸気をウェハＷ上に供給して、ウェハＷ上に第１のレジスト膜Ｒ１を形成するようにしてもよい。この場合、第１のレジスト膜Ｒ１は、前記したような密着性を高める効果を有するものが好ましい。 In applying the first resist film R 1 , resist solution vapor may be supplied onto the wafer W to form the first resist film R 1 on the wafer W. In this case, the first resist film R 1 are those having an effect of enhancing the adhesion as described above are preferred.
　さらにまた、前記実施の形態では、離型剤塗布ユニット３２０を採用し、テンプレートＴの表面に対して、液状の離型剤Ｓを離型剤ノズル３９２により、いわゆるスピンコーティング法によって塗布し、その後焼成して離型剤を成膜するようにしていたが、これに代えて、前記した成膜ユニット４５０のように、離型剤の蒸気をテンプレートＴの表面に供給して成膜する方式の、離型剤成膜ユニットを採用してもよい。 Furthermore, in the above embodiment, the release agent application unit 320 is adopted, and the liquid release agent S is applied to the surface of the template T by the release agent nozzle 392 by the so-called spin coating method, and thereafter The release agent was formed into a film by firing, but instead of this, a film is formed by supplying vapor of the release agent to the surface of the template T as in the film formation unit 450 described above. Alternatively, a release agent film forming unit may be employed.
　このような離型剤の蒸気を供給する離型剤成膜ユニットは、構造的には成膜ユニット４５０と同一のものを用いることができ、密着剤供給源４９１に代えて、離型剤（たとえばシランカップリング剤）を貯留した離型剤供給源を使用すればよい。そして水蒸気を供給するための水蒸気供給源４９２は、そのままこれを使用することができる。 Such a release agent film forming unit that supplies the release agent vapor can be structurally the same as the film formation unit 450. Instead of the adhesive supply source 491, a release agent ( For example, a release agent supply source storing a silane coupling agent) may be used. The water vapor supply source 492 for supplying water vapor can be used as it is.
　このように離型剤の蒸気を供給して、テンプレートＴ表面に離型剤を成膜する方式によれば、液体の離型剤を塗布して成膜する場合と比較すると、リンス、焼成する必要がなく、またより均一に成膜することが可能である。 In this manner, according to the system in which the release agent vapor is supplied and the release agent is formed on the surface of the template T, rinsing and baking are performed as compared with the case where the liquid release agent is applied to form a film. There is no need to form the film more uniformly.
　以上、添付図面を参照しながら本発明の好適な実施の形態について説明したが、本発明はかかる例に限定されない。当業者であれば、特許請求の範囲に記載された思想の範疇内において、各種の変更例または修正例に想到し得ることは明らかであり、それらについても当然に本発明の技術的範囲に属するものと了解される。本発明はこの例に限らず種々の態様を採りうるものである。本発明は、基板がウェハ以外のＦＰＤ（フラットパネルディスプレイ）、フォトマスク用のマスクレチクルなどの他の基板である場合にも適用できる。 The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.
　　１　　インプリントシステム
　　２　　ウェハ搬入出ステーション
　　３　　ウェハ処理ステーション
　　４　　インプリント処理ステーション
　　５　　テンプレート搬入出ステーション
　　３０～３３　レジスト塗布ユニット
　　４２、４３、５２、５３　加熱ユニット
　　６０　インプリントユニット
　　７０　搬送ユニット
　　１８０　ウェハ搬送アーム
　　１８１　テンプレート搬送アーム
　　２００　制御部
　　２１０　遮蔽板
　　３００　テンプレート処理ステーション
　　４５０　成膜ユニット
　　Ｅ１、Ｅ２　インプリントブロック
　　Ｅ３　搬送領域
　　Ｆ１～Ｆ６　処理ブロック
　　Ｃ　　転写パターン
　　Ｐ　　レジストパターン
　　Ｒ１　　第１のレジスト膜
　　Ｒ２　　第２のレジスト膜
　　Ｓ　　離型剤
　　Ｔ　　テンプレート
　　Ｗ　　ウェハ DESCRIPTION OF SYMBOLS 1 Imprint system 2 Wafer carrying in / out station 3 Wafer processing station 4 Imprint processing station 5 Template carrying in / out station 30-33 Resist coating unit 42, 43, 52, 53 Heating unit 60 Imprint unit 70 Conveyance unit 180 Wafer conveyance arm 181 Template Transfer arm 200 Control unit 210 Shield plate 300 Template processing station 450 Deposition unit E1, E2 Imprint block E3 Transfer area F1-F6 Processing block C Transfer pattern P Resist pattern R 1 First resist film R 2 Second resist film S Release agent T Template W Wafer

Claims (23)

  1. 表面に転写パターンが形成されたテンプレートを用いて、基板上に所定のレジストパターンを形成するインプリントシステムであって、
    基板上に第１のレジスト膜を形成する基板処理ステーションと、
    前記第１のレジスト膜が形成された基板上に第２のレジスト膜を形成し、前記転写パターンを前記第２のレジスト膜に転写して当該第２のレジスト膜に所定のレジストパターンを形成するインプリントユニットが複数配置され、前記基板処理ステーションに接続されたインプリント処理ステーションと、
    前記基板処理ステーションに接続され、当該基板処理ステーションに基板を搬入出する基板搬入出ステーションと、
    前記インプリント処理ステーションに接続され、当該インプリント処理ステーションにテンプレートを搬入出するテンプレート搬入出ステーションと、を有し、
    前記インプリント処理ステーションは、前記各インプリントユニットに対して基板を搬送する基板搬送アームと前記各インプリントユニットに対してテンプレートを搬送するテンプレート搬送アームとを備えた搬送ユニットを有する。     An imprint system for forming a predetermined resist pattern on a substrate using a template having a transfer pattern formed on the surface,
    A substrate processing station for forming a first resist film on the substrate;
    A second resist film is formed on the substrate on which the first resist film is formed, the transfer pattern is transferred to the second resist film, and a predetermined resist pattern is formed on the second resist film. A plurality of imprint units, and an imprint processing station connected to the substrate processing station;
    A substrate loading / unloading station connected to the substrate processing station and loading / unloading the substrate to / from the substrate processing station;
    A template loading / unloading station connected to the imprint processing station and loading / unloading the template to / from the imprint processing station;
    The imprint processing station includes a transport unit including a substrate transport arm that transports a substrate to each imprint unit and a template transport arm that transports a template to each imprint unit.
  2. 請求項１に記載のインプリントシステムにおいて、
    前記搬送ユニットは、複数の前記基板搬送アームと複数のテンプレート搬送アームを有する。     The imprint system according to claim 1,
    The transfer unit includes a plurality of the substrate transfer arms and a plurality of template transfer arms.
  3. 請求項２に記載のインプリントシステムにおいて、
    前記複数の基板搬送アームと前記複数のテンプレート搬送との間には、遮蔽板が設けられている。     The imprint system according to claim 2,
    A shielding plate is provided between the plurality of substrate transfer arms and the plurality of template transfers.
  4. 請求項１～３のいずれかに記載のインプリントシステムにおいて、
    前記テンプレート搬送アームは、テンプレートの表裏面を反転させるように回動自在である。     The imprint system according to any one of claims 1 to 3,
    The template transport arm is rotatable so as to invert the front and back surfaces of the template.
  5. 請求項１～４のいずれかに記載のインプリントシステムにおいて、
    前記インプリント処理ステーションには、前記複数のインプリントユニットを水平方向に並べて配置した２列のインプリントブロックが形成され、
    前記２列のインプリントブロック間には、前記搬送ユニットが配置された搬送領域が形成されている。     The imprint system according to any one of claims 1 to 4,
    In the imprint processing station, two rows of imprint blocks in which the plurality of imprint units are arranged in a horizontal direction are formed,
    Between the two rows of imprint blocks, a transport region in which the transport unit is disposed is formed.
  6. 請求項１～５のいずれかに記載のインプリントシステムにおいて、
    前記基板処理ステーションは、基板上に塗布液を塗布する塗布ユニットを有する。     The imprint system according to any one of claims 1 to 5,
    The substrate processing station has a coating unit for coating a coating solution on a substrate.
  7. 請求項６に記載のインプリントシステムにおいて、
    前記塗布ユニットは、前記第１のレジスト膜を形成する液体の蒸気を基板上に供給するものである。     The imprint system according to claim 6, wherein
    The coating unit supplies liquid vapor for forming the first resist film onto the substrate.
  8. 請求項１～７のいずれかに記載のインプリントシステムにおいて、
    前記第１のレジスト膜が形成された基板上に、前記第２のレジスト膜との密着性を高める密着剤を塗布する密着剤塗布ユニットを、前記基板処理ステーションに有する。     The imprint system according to any one of claims 1 to 7,
    The substrate processing station includes an adhesive application unit that applies an adhesive that enhances adhesion to the second resist film on the substrate on which the first resist film is formed.
  9. 請求項８に記載のインプリントシステムにおいて、
    前記密着剤塗布ユニットは、密着剤の蒸気を前記第１のレジスト膜が形成された基板上に供給するものである。     The imprint system according to claim 8, wherein
    The adhesive application unit supplies the adhesive vapor onto the substrate on which the first resist film is formed.
  10. 請求項９に記載のインプリントシステムにおいて、
    前記密着剤塗布ユニットは、基板に対して水蒸気を供給する機能を有している。     The imprint system according to claim 9, wherein
    The adhesive application unit has a function of supplying water vapor to the substrate.
  11. 請求項１～１０のいずれかに記載のインプリントシステムにおいて、
    前記インプリント処理ステーションと前記テンプレート搬入出ステーションとの間には、テンプレートの表面に離型剤を成膜する離型剤処理ブロックを備えたテンプレート処理ステーションが配置されている。     The imprint system according to any one of claims 1 to 10,
    Between the imprint processing station and the template carry-in / out station, there is disposed a template processing station having a release agent processing block for forming a release agent on the surface of the template.
  12. 請求項１１に記載のインプリントシステムにおいて、
    前記テンプレート処理ステーションには、前記インプリント処理ステーションから搬出されたテンプレートの表面を洗浄するテンプレート洗浄ブロックが配置されている。     The imprint system according to claim 11,
    In the template processing station, a template cleaning block for cleaning the surface of the template carried out from the imprint processing station is arranged.
  13. 請求項１１又は１２に記載のインプリントシステムにおいて、前記基板処理ステーションと前記テンプレート処理ステーションは、鉛直方向に積層されて配置され、
    前記基板搬入出ステーションと前記テンプレート搬入出ステーションは、鉛直方向に積層されて配置されている。     The imprint system according to claim 11 or 12, wherein the substrate processing station and the template processing station are stacked in a vertical direction,
    The substrate loading / unloading station and the template loading / unloading station are stacked in the vertical direction.
  14. 請求項１３に記載のインプリントシステムにおいて、
    前記テンプレート処理ステーションは、前記基板処理ステーションの上方に配置され、
    前記テンプレート搬入出ステーションは、前記基板搬入出ステーションの上方に配置されている。     The imprint system according to claim 13.
    The template processing station is disposed above the substrate processing station,
    The template loading / unloading station is disposed above the substrate loading / unloading station.
  15. 請求項１１又は１２に記載のインプリントシステムにおいて、前記基板処理ステーションと前記テンプレート処理ステーションは、前記インプリント処理ステーションを挟んで水平方向に並べて配置されている。 13. The imprint system according to claim 11 or 12, wherein the substrate processing station and the template processing station are arranged in a horizontal direction with the imprint processing station interposed therebetween.
  16. 請求項１１～１５のいずれかに記載のインプリントシステムにおいて、
    テンプレートの表面に離型剤の蒸気を供給して、当該表面に離型剤を成膜する離型剤成膜ユニットが、前記離型剤処理ブロックに設けられている。     The imprint system according to any one of claims 11 to 15,
    A release agent film forming unit for supplying a release agent vapor to the surface of the template to form a release agent on the surface is provided in the release agent processing block.
  17. 請求項１６に記載のインプリントシステムにおいて、
    前記離型剤成膜ユニットは、テンプレートに対して水蒸気を供給する機能を有している。     The imprint system according to claim 16, wherein
    The release agent film forming unit has a function of supplying water vapor to the template.
  18. インプリントシステムにおいて、表面に転写パターンが形成されたテンプレートを用いて、基板上に所定のレジストパターンを形成するインプリント方法であって、
    前記インプリントシステムは、
    基板上に第１のレジスト膜を形成する基板処理ステーションと、
    前記第１のレジスト膜が形成された基板上に第２のレジスト膜を形成し、前記転写パターンを前記第２のレジスト膜に転写して当該第２のレジスト膜に所定のレジストパターンを形成するインプリントユニットが複数配置されると共に、前記各インプリントユニットに対して基板を搬送する基板搬送アームと前記各インプリントユニットに対してテンプレートを搬送するテンプレート搬送アームとを備えた搬送ユニットを有し、前記基板処理ステーションに接続されたインプリント処理ステーションと、
    前記基板処理ステーションに接続され、当該基板処理ステーションに基板を搬入出する基板搬入出ステーションと、
    前記インプリント処理ステーションに接続され、当該インプリント処理ステーションにテンプレートを搬入出するテンプレート搬入出ステーションと、を有し、
    前記基板処理ステーションにおいて複数の基板上に第１のレジスト膜を形成し、
    前記搬送ユニットを用いて、前記基板処理ステーションから前記インプリント処理ステーションに前記第１のレジスト膜が形成された複数の基板を連続して搬送すると共に、前記テンプレート搬入出ステーションから前記インプリント処理ステーションに複数のテンプレートを連続して搬送し、
    前記インプリント処理ステーションでは、各テンプレートを用いた各基板に対する前記所定のレジストパターンの形成が前記各インプリントユニットで並行して行なわれる。     In an imprint system, using a template having a transfer pattern formed on a surface, an imprint method for forming a predetermined resist pattern on a substrate,
    The imprint system includes:
    A substrate processing station for forming a first resist film on the substrate;
    A second resist film is formed on the substrate on which the first resist film is formed, the transfer pattern is transferred to the second resist film, and a predetermined resist pattern is formed on the second resist film. A plurality of imprint units are arranged, and includes a substrate transport arm that transports a substrate to each imprint unit and a template transport arm that transports a template to each imprint unit. An imprint processing station connected to the processing station;
    A substrate loading / unloading station connected to the substrate processing station and loading / unloading the substrate to / from the substrate processing station;
    A template loading / unloading station connected to the imprint processing station and loading / unloading the template to / from the imprint processing station;
    Forming a first resist film on a plurality of substrates in the substrate processing station;
    Using the transport unit, the plurality of substrates on which the first resist film is formed are continuously transported from the substrate processing station to the imprint processing station, and from the template loading / unloading station to the imprint processing station. Conveys multiple templates in succession,
    In the imprint processing station, the predetermined resist pattern is formed on each substrate using each template in parallel in each imprint unit.
  19. 請求項１８に記載のインプリント方法において、
    前記基板処理ステーションにおいて、基板上に塗布液が塗布される。     The imprint method according to claim 18, wherein
    In the substrate processing station, a coating solution is applied onto the substrate.
  20. 請求項１８又は１９に記載のインプリント方法において、
    前記インプリント処理ステーションと前記テンプレート搬入出ステーションとの間には、離型剤処理ブロックを備えたテンプレート処理ステーションが配置され、
    前記離型剤ブロックにおいて、前記テンプレート搬入出ステーションから搬入されたテンプレート上に離型剤を成膜する。     The imprint method according to claim 18 or 19,
    A template processing station having a release agent processing block is disposed between the imprint processing station and the template carry-in / out station,
    In the release agent block, a release agent is deposited on the template carried in from the template carry-in / out station.
  21. 請求項２０に記載のインプリント方法において、
    前記テンプレート処理ステーションにはテンプレート洗浄ブロックが配置され、
    前記テンプレート洗浄ブロックにおいて、前記インプリント処理ステーションから搬出されたテンプレートの表面を洗浄する。     The imprint method according to claim 20, wherein
    A template cleaning block is disposed in the template processing station,
    In the template cleaning block, the surface of the template carried out from the imprint processing station is cleaned.
  22. 請求項１８～２１のいずれかに記載のインプリント方法において、
    前記インプリントシステムは、前記第１のレジスト膜が形成された基板上に、前記第２のレジスト膜との密着性を高める密着剤を塗布する密着剤塗布ユニットを、前記基板処理ステーションに有し、
    第１のレジスト膜形成後に、前記密着剤が基板上に塗布される工程を有する。     The imprint method according to any one of claims 18 to 21,
    The imprint system includes an adhesive agent coating unit that applies an adhesive agent that improves adhesion to the second resist film on the substrate on which the first resist film is formed, in the substrate processing station. ,
    After the first resist film is formed, the adhesive agent is applied on the substrate.
  23. 請求項１８～２２のいずれかに記載のインプリント方法をインプリントシステムによって実行させるために、当該インプリントシステムを制御する制御部のコンピュータ上で動作するプログラムを格納した、読み取り可能なコンピュータ記憶媒体。 23. A readable computer storage medium storing a program that operates on a computer of a control unit that controls the imprint system in order to cause the imprint method according to claim 18 to be executed by the imprint system. .
PCT/JP2011/061305 2010-05-21 2011-05-17 Imprinting system, imprinting method, and computer storage medium WO2011145611A1 (en)

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