CN111954923A - Heat treatment apparatus and heat treatment method - Google Patents
Heat treatment apparatus and heat treatment method Download PDFInfo
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- CN111954923A CN111954923A CN201980019855.XA CN201980019855A CN111954923A CN 111954923 A CN111954923 A CN 111954923A CN 201980019855 A CN201980019855 A CN 201980019855A CN 111954923 A CN111954923 A CN 111954923A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 200
- 238000000034 method Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000011248 coating agent Substances 0.000 claims abstract description 33
- 238000000576 coating method Methods 0.000 claims abstract description 33
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 235000012431 wafers Nutrition 0.000 description 123
- 238000012546 transfer Methods 0.000 description 40
- 238000012545 processing Methods 0.000 description 35
- 230000008569 process Effects 0.000 description 16
- 239000012535 impurity Substances 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 9
- 238000004132 cross linking Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
A heat treatment device for heat-treating a coating film formed on a substrate includes: a mounting part for mounting a substrate; a heating unit for heating a substrate placed thereon; an annular body provided so as to surround the outer periphery of the placement portion; a lid body covering the placement portion and forming a heat treatment space by a lower surface of the lid body coming into contact with or approaching the annular body; a central exhaust unit disposed at a central portion of the lid body for exhausting the heat treatment space; and a control unit that controls a heat treatment of the substrate placed on the placement unit, wherein the control unit controls to perform: a first heat treatment step of heating the substrate without exhausting the inside of the heat treatment space in a state where the heat treatment space is formed and the substrate is present in the heat treatment space; and a second heat treatment step of operating the central exhaust unit to exhaust the gas from the heat treatment space and heat the substrate.
Description
Technical Field
(Cross-reference to related applications)
The present application claims priority from patent application No. 2018-56754 to date 3-23 of 2018, and the contents of which are incorporated herein by reference.
The present invention relates to a heat treatment apparatus and a heat treatment method.
Background
In a process for manufacturing a semiconductor device, for example, a substrate on which a coating film such as a resist film is formed, for example, a semiconductor wafer (hereinafter, the coating film may be simply referred to as a wafer) is subjected to a heat treatment in order to dry the coating film.
Conventionally, such a heat treatment is performed using a heat treatment apparatus, but since uniformity of film thickness is affected when heating is performed, attention needs to be paid to air flow control and exhaust control in a heat treatment chamber. For example, when the exhaust treatment in the heat treatment vessel is performed only from the exhaust port provided above the central portion of the wafer, the thickness of the coating film applied to the wafer becomes thicker at the central portion than at the outer peripheral portion due to the influence of the exhaust flow formed in the treatment vessel.
Therefore, the heat treatment apparatus described in patent document 1 includes a central exhaust port provided at an upper position corresponding to the center of the wafer placed on the placement portion, and further includes peripheral exhaust ports formed at equal intervals in the circumferential direction at an upper position outside the outer edge of the wafer.
In patent document 1, when the wafer is heated to perform the crosslinking reaction, the gas is exhausted from the central exhaust port at a small flow rate, and the gas is exhausted from the peripheral exhaust port at a large flow rate. This makes it possible to control the flow of exhaust gas in the heat treatment chamber, particularly in the center portion of the wafer, to suppress the film from bulging in the center of the wafer, and to ensure good in-plane uniformity of the film thickness of the coating film formed on the wafer.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2016-115919
Disclosure of Invention
Problems to be solved by the invention
However, in the heat treatment apparatus described in patent document 1, although the in-plane uniformity of the film thickness can be improved as a whole, the process container atmosphere is exhausted from both the center exhaust port and the peripheral exhaust port during the heat treatment, and exhaust flows to both the exhaust ports are generated in the process container. As a result, the thickness of the coating film may be thicker at the central portion and the peripheral portion than at other portions. That is, there is room for further improvement in the in-plane uniformity of the film thickness on the wafer.
In view of the above, one embodiment of the present invention is to further improve the in-plane uniformity of the film thickness of a coating film on a substrate when the substrate is subjected to heat treatment.
Means for solving the problems
One aspect of the present invention is a heat treatment apparatus for performing heat treatment on a coating film formed on a substrate, the heat treatment apparatus including: a mounting part for mounting a substrate; a heating unit configured to heat the substrate placed on the placing unit; an annular body provided so as to surround an outer periphery of the placement portion; a lid body that covers the placement portion and forms a heat treatment space by a lower surface of the lid body coming into contact with or approaching the annular body; a central exhaust unit disposed at a central portion of the lid body and configured to exhaust the heat treatment space; and a control unit that controls heat treatment of the substrate placed on the placement unit, wherein the control unit controls to perform: a first heat treatment step of heating the substrate without exhausting the inside of the heat treatment space in a state where the heat treatment space is formed and the substrate is present in the heat treatment space; and a second heat treatment step of heating the substrate while exhausting the gas from the heat treatment space by operating the central exhaust unit.
According to one embodiment of the present invention, the heat treatment space formed by the lid body and the annular body in contact with or in proximity to each other is not exhausted in the first heat treatment step. Then, a second heat treatment step is performed, and in the second heat treatment step thereafter, the central exhaust portion is operated to exhaust the gas from the heat treatment space and to heat the substrate. Therefore, the influence of the exhaust flow on the film thickness can be reduced, and the in-plane uniformity of the coating film can be improved.
Here, the proximity means a state where a gap exists between the lid body and the annular body, and the size of the gap is, for example, more than 0mm and 1mm or less.
An aspect of the present invention from another viewpoint is a heat treatment method for performing heat treatment on a coating film formed on a substrate, the heat treatment method including forming a heat treatment space in which a mounting unit having a heating function and the substrate are accommodated in a state in which the substrate is mounted on the mounting unit, the heat treatment method including: a first heat treatment step of heating the substrate without exhausting the inside of the heat treatment space in a state where the substrate is present in the heat treatment space; and a second heat treatment step of exhausting the inside of the heat treatment space from at least above a central portion of the heat treatment space and heating the substrate.
ADVANTAGEOUS EFFECTS OF INVENTION
According to one embodiment of the present invention, when the substrate is heated, the in-plane uniformity of the film thickness of the coating film on the substrate can be further improved as compared with the conventional one.
Drawings
Fig. 1 is a plan view schematically showing a substrate processing system including a heat treatment apparatus according to the present embodiment.
Fig. 2 is a front view of the substrate processing system of fig. 1.
Fig. 3 is a rear view of the substrate processing system of fig. 1.
Fig. 4 is an explanatory view schematically showing a side cross section showing an outline of the configuration of the heat treatment device according to the present embodiment.
Fig. 5 is an explanatory view schematically showing a case where the heat treatment apparatus of fig. 4 forms a heat treatment space.
Fig. 6 is an explanatory view schematically showing a state in which the ring member is lowered in the heat treatment apparatus of fig. 5.
Fig. 7 is an explanatory diagram illustrating a flow of a series of operations of the heat treatment device according to the present embodiment.
Fig. 8 is an explanatory diagram illustrating a flow of a series of operations of the heat treatment device according to the present embodiment.
Fig. 9 is a graph showing a flow of a series of operations during wafer heating in the heating processing apparatus according to the present embodiment and a substrate temperature with time.
Detailed Description
Embodiments of the present invention will be described below with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description thereof is omitted.
< substrate processing System >
First, the configuration of a substrate processing system including the heat treatment apparatus according to the present embodiment will be described. Fig. 1 is a plan view schematically showing the configuration of a substrate processing system 1. Fig. 2 and 3 are a front view and a rear view schematically showing the internal structure of the substrate processing system 1, respectively. In the substrate processing system 1, a predetermined process is performed on a wafer W as a target substrate.
As shown in fig. 1, a substrate processing system 1 has a structure in which the following parts are integrally connected: a cassette transfer station 10 for carrying in and out a cassette C containing a plurality of wafers W to and from the cassette transfer station 10; a processing station 11 including a plurality of processing apparatuses for performing a predetermined process on the wafer W; and an interface station 13 that transfers the wafer W to and from the exposure apparatus 12 adjacent to the processing station 11.
The cassette transfer station 10 is provided with a cassette mounting table 20. The cassette mounting table 20 is provided with a plurality of cassette mounting plates 21 for mounting the cassettes C when the cassettes C are carried in and out from the outside of the substrate processing system.
As shown in fig. 1, the cassette transfer station 10 is provided with a wafer transfer device 23 that is movable on a transfer path 22 extending in the X direction. The wafer transfer device 23 is also movable in the vertical direction and in the vertical direction (θ direction), and is capable of transferring the wafer W between the cassettes C on the cassette mounting plates 21 and a transfer device of the third block G3 of the process station 11 described later.
The processing station 11 is provided with a plurality of blocks including various devices, for example, four blocks, i.e., a first block G1 to a fourth block G4. For example, a second block G2 is provided on the back side (the positive X-direction side in fig. 1, the upper side in the drawing) of the processing station 11. The third block G3 described above is provided on the cassette transfer station 10 side (negative Y direction side in fig. 1) of the processing station 11, and the fourth block G4 is provided on the interface station 13 side (positive Y direction side in fig. 1) of the processing station 11.
For example, as shown in fig. 2, a plurality of liquid processing apparatuses, for example, a developing apparatus 30 for performing a developing process on the wafer W, a lower anti-reflection film forming apparatus 31 for forming an anti-reflection film (hereinafter referred to as "lower anti-reflection film") on a lower layer of the process film on the wafer W, a resist coating apparatus 32 as a process liquid coating apparatus for coating a resist on the wafer W to form a process film, and an upper anti-reflection film forming apparatus 33 for forming an anti-reflection film (hereinafter referred to as "upper anti-reflection film") on an upper layer of the process film on the wafer W are sequentially disposed from bottom to top in the first block G1.
For example, the developing apparatus 30, the lower anti-reflection film forming apparatus 31, the resist coating apparatus 32, and the upper anti-reflection film forming apparatus 33 are arranged in three rows in the horizontal direction. The number and arrangement of the developing apparatus 30, the lower anti-reflection film forming apparatus 31, the resist coating apparatus 32, and the upper anti-reflection film forming apparatus 33 can be arbitrarily selected.
The developing apparatus 30, the lower anti-reflection film forming apparatus 31, the resist coating apparatus 32, and the upper anti-reflection film forming apparatus 33 perform, for example, spin coating of the wafer W with a predetermined processing liquid. During the spin coating, the wafer W is rotated while the processing liquid is discharged from the coating nozzle onto the wafer W, for example, to diffuse the processing liquid on the surface of the wafer W.
As shown in fig. 3, for example, in the second block G2, the heat treatment apparatus 40, the hydrophobic treatment apparatus 41, and the periphery exposure apparatus 42 according to the embodiment are provided so as to be aligned in the vertical direction and the horizontal direction, the heat treatment apparatus 40 according to the embodiment performs the heat treatment of the wafer W, the hydrophobic treatment apparatus 41 performs the hydrophobic treatment to improve the adhesiveness of the resist solution to the wafer W, and the periphery exposure apparatus 42 exposes the outer periphery of the wafer W. The number and arrangement of the heat treatment apparatuses 40, the hydrophobization apparatus 41, and the peripheral exposure apparatus 42 can be arbitrarily selected.
For example, the third block G3 is provided with a plurality of passing devices 50, 51, 52, 53, 54, 55, 56 in this order from bottom to top. In the fourth block G4, a plurality of delivery devices 60, 61, and 62 are provided in this order from the bottom.
As shown in fig. 1, a wafer conveyance area E is formed in an area surrounded by the first block G1 to the fourth block G4. In the wafer transfer area E, a plurality of wafer transfer devices 70 are arranged, and the wafer transfer devices 70 include transfer arms 70a that are movable in, for example, the Y direction, the X direction, the θ direction, and the vertical direction. The wafer transfer device 70 moves in the wafer transfer area E, and can transfer the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4.
As shown in fig. 3, the shuttle conveying device 80 for linearly conveying the wafer W between the third block G3 and the fourth block G4 is provided in the wafer conveying area E.
The shuttle conveying device 80 is linearly movable in the Y direction of fig. 3, for example. The shuttle 80 can move in the Y direction while supporting the wafer W, and can convey the wafer W between the delivery device 52 of the third block G3 and the delivery device 62 of the fourth block G4.
As shown in fig. 1, a wafer carrier 81 is provided in the vicinity of the third block G3 on the positive X-direction side. The wafer transfer device 81 includes a transfer arm 81a that is movable in, for example, the X direction, the θ direction, and the up-down direction. The wafer transfer device 81 can move in the vertical direction with the wafer W supported by the transfer arm 81a, and transfer the wafer W to the respective transfer devices in the third block G3.
The interface station 13 is provided with a wafer transfer device 90 and transfer devices 91 and 92. The wafer transfer device 90 includes a transfer arm 90a that is movable in, for example, the Y direction, the θ direction, and the up-down direction. The wafer transfer device 90 can support the wafer W on the transfer arm 90a, for example, and transfer the wafer W between the respective delivery devices, the delivery devices 91 and 92, and the exposure device 12 in the fourth block G4.
In the substrate processing system 1 described above, the control unit 100 is provided as shown in fig. 1. The control unit 100 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the substrate processing system 1. The program may be recorded in a computer-readable storage medium such as a Hard Disk (HD), a Flexible Disk (FD), a Compact Disc (CD), a magneto-optical disk (MO), or a memory card, and installed from the storage medium to the control unit 100.
< operation of substrate processing System >
Next, a wafer process performed by using the substrate processing system 1 configured as described above will be described.
First, the cassette C containing a plurality of wafers W is loaded into the cassette transfer station 10 of the substrate processing system 1 and placed on the cassette mounting plate 21. Next, the wafers W in the cassette C are sequentially taken out by the wafer transfer device 23 and transferred to the delivery device 53 of the third block G3 of the processing station 11.
The wafer W conveyed to the transfer device 53 is conveyed to the heat treatment device 40 of the second block G2 by the wafer conveying device 70, and temperature adjustment processing is performed. Next, the wafer W is transported by the wafer transport apparatus 70 to, for example, the bottom anti-reflection film forming apparatus 31 of the first block G1, and a bottom anti-reflection film is formed on the wafer W. Thereafter, the wafer W is carried to the heat treatment apparatus 40 of the second block G2, subjected to heat treatment, and returned to the delivery apparatus 53 of the third block G3.
The wafer W returned to the delivery device 53 is transported to the delivery device 54 of the third block G3 by the wafer transport device 81. Subsequently, the wafer W is transported to the hydrophobization apparatus 41 of the second block G2 by the wafer transport apparatus 70, and hydrophobization is performed.
The wafer W subjected to the hydrophobization treatment is transported to the resist coating apparatus 32 by the wafer transport apparatus 70, and a resist is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70, subjected to the prebaking process, and transferred to the delivery apparatus 55 of the third block G3.
The wafer W conveyed to the delivery apparatus 55 of the third block G3 is conveyed to the upper anti-reflection film forming apparatus 33 by the wafer conveying apparatus 70, and an upper anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70, heated, and then temperature-adjusted. After the temperature adjustment, the wafer W is conveyed to the peripheral exposure apparatus 42 to be subjected to the peripheral exposure process.
Subsequently, the wafer W is conveyed to the delivery device 56 of the third block G3 by the wafer conveying device 70.
The wafer W conveyed to the delivery device 56 of the third block G3 is conveyed to the delivery device 52 by the wafer conveying device 81, and conveyed to the delivery device 62 of the fourth block G4 by the shuttle conveying device 80. The wafer W conveyed to the delivery device 62 is conveyed to the exposure device 12 by the wafer conveyance device 90 of the interface station 13, and exposure processing is performed in a predetermined pattern.
The wafer W subjected to the exposure process is transferred to the delivery apparatus 60 of the fourth block G4 by the wafer transfer apparatus 90. Thereafter, the wafer is transported to the heat treatment apparatus 40 by the wafer transport apparatus 70, and the post-exposure baking process is completed.
Next, the wafer W is transported to the developing apparatus 30 by the wafer transport apparatus 70 and developed. After the development is completed, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70, and the post-baking treatment is performed.
Thereafter, the wafer W is carried by the wafer carrier 70 to the delivery device 50 of the third block G3, and is carried by the wafer carrier 23 of the cassette delivery station 10 to the cassette C of the predetermined cassette placement plate 21. Thus, the series of photolithography steps is completed.
< construction of Heat treatment apparatus >
Next, the structure of the heat treatment apparatus 40 according to the embodiment of the present invention will be described with reference to fig. 4.
Fig. 4 is a side cross-sectional view schematically showing the configuration of the heat treatment apparatus 40. As shown in fig. 4, the heat treatment apparatus 40 includes: a mounting unit 200 on which a wafer W is mounted; a ring body 210 provided so as to surround the outer periphery of the placement portion 200; and a cover 220 disposed to face the mounting portion 200, and forming a heat treatment space S by contacting the annular body 210 and covering the mounting portion 200.
The mounting unit 200 includes a hot plate 201 on which the wafer W is directly mounted, and the hot plate 201 is supported by a hot plate support unit 202. The platen support portion 202 is supported by a base 204 constituting the bottom of the heat treatment device 40 via a plurality of support columns 203. A heater 205 as a heating portion is provided inside the hot plate 201.
The base 204 is provided with a support pin lifting mechanism 206 capable of moving the support pin 207 up and down. Thus, the support pin 207 can freely protrude upward from the hot plate 201, and can receive and transmit the wafer W with the transfer arm 70a of the wafer transfer device 70 described above.
The ring body 210 is vertically movable by a ring body elevating mechanism 211. Further, in a state where ring body 210 is lifted up to the top, upper surface 210a of ring body 210 is arranged to be flush with the height of the upper surface of hot plate 201.
The cover 220 has: a top plate 220a facing the hot plate 201 and forming a top surface of the heat treatment space S; and a hanging portion 220b forming a sidewall of the heat treatment space S. The lid 220 is configured to be movable up and down by a lid lifting mechanism (not shown), and by lowering the lid 220 by the lid lifting mechanism, the lower surface 220c of the suspended portion 220b is brought into contact with the upper surface 210a of the ring body 210, thereby forming the heat treatment space S.
Further, when the heat treatment space S is formed, the ring body 210 is lowered by the ring body lifting mechanism 211, whereby a gap D can be formed between the lower surface 220c of the suspended portion 220b of the lid body 220 and the upper surface 210a of the ring body 210 as shown in fig. 6.
A central exhaust portion 221 for exhausting the interior of the heat treatment space S is provided at the center of the top plate 220a, i.e., above the central portion of the wafer W mounted on the hot plate 201. The central exhaust unit 221 communicates with an exhaust unit 222 provided outside the heat treatment apparatus 40, for example, and can exhaust the atmosphere in the heat treatment space S.
An annular outer extension 225 is provided on the outer periphery of the lid 220. The outer extension 225 includes an extension 225a and a hanging portion 225b, and an annular opening 225c having an opening on the lower surface side is formed between the hanging portion 225b and the outer side of the hanging portion 220b of the lid body 220. The opening 225c communicates with an exhaust portion (not shown), and constitutes an outer peripheral exhaust portion 230 of the present invention.
The height position of the lower end surface 225d of the hanging-down portion 225b of the outer extension portion 225 is set higher than the lower surface 220c of the hanging-down portion 220b of the lid body 220. Therefore, when the lid 220 abuts the ring body 210 to form the heat treatment space S, the lower end surface 225D of the suspended portion 225b of the outer extending portion 225 does not abut the upper surface 210a of the ring body 210 and the upper surface of the outer exhaust portion 240 described later, and a gap D2 is formed as shown in fig. 5 and 6.
An outer exhaust portion 240 for exhausting the atmosphere gas leaked to the outside of the heat treatment space S is provided outside the outer periphery of the annular body 210. The outside exhaust unit 240 communicates with an exhaust device 241 provided outside the heat treatment device 40, for example.
< operation of Heat treatment apparatus >
The heat treatment apparatus 40 according to the embodiment has the above-described configuration, and a heat treatment method using the heat treatment apparatus 40 will be described next. Fig. 7 and 8 are explanatory views schematically showing the operation of the heat treatment apparatus 40 in a series of heat treatment steps, and fig. 9 is a timing chart showing the change with time of the substrate temperature, various kinds of exhaust, and the operation of the ring body 210 in the heat treatment performed by the heat treatment apparatus 40. In fig. 9, the time point at which the first heat treatment step described later is started is 0 on the horizontal axis.
First, the exhaust device 222, the exhaust device 241, and the outer exhaust portion are operated to exhaust the gas from the central exhaust portion 221, the outer peripheral exhaust portion 230, and the outer exhaust portion 240, thereby stabilizing the atmosphere in the heat treatment device 40. After the atmosphere is stabilized in this way, the lid 220 is raised as shown in fig. 7 (a). In this state, the wafer W to be heated is carried onto the hot plate 201 of the placing unit 200 and placed on the support pins 207 by the carrying arm 70a of the wafer carrying device 70 of the substrate processing system 1. Thereafter, the transfer arm 70a is retracted out of the heat treatment apparatus 40, and then the support pins 207 are lowered to place the wafer W on the hot plate 201. After the wafer W is placed on the hot plate 201, the lid 220 is lowered by a lid lifting mechanism (not shown), whereby the upper surface 210a of the ring body 210 is brought into contact with the lower surface 220c of the suspended portion 220b of the lid 220 to form a heat treatment space S (preparation step). In this case, even if the upper surface 210a of the ring body 210 and the lower surface 220c of the hanging portion 220b of the lid body 220 do not completely abut against each other, a small gap in which substantially no air is discharged, for example, a gap exceeding 0mm and 1mm or less, for example, a gap of 0.5mm, may be formed between them.
Next, as shown in fig. 7 (b) and 9, the exhaust device 222 is stopped to stop the exhaust of the central exhaust portion 221, and the first heat treatment of the wafer W placed on the hot plate 201 of the placing portion 200 by the heater 205 is started (first heat treatment step). In the first heat treatment step, the central exhaust unit 221 is not exhausted. That is, the central exhaust unit 221 does not exhaust until the temperature of the wafer W reaches the cross-linking temperature of the coating film applied to the wafer W.
After the wafer temperature reaches the crosslinking temperature, that is, after the reaction of the coating film is stabilized and the influence of the gas flow on the coating film is weakened, the exhaust device 222 is again operated to perform the exhaust from the central exhaust unit 221 (second heat treatment step).
In this way, in the first heat treatment step, that is, until the temperature of the wafer W reaches the crosslinking temperature of the coating film, the exhaust is not performed from the central exhaust portion 221 in the heat treatment space S, and therefore, no exhaust flow is formed in the heat treatment space S. Therefore, it is possible to prevent the film thickness of the coating film from being affected by the influence of the exhaust gas flow generated in the heat treatment space S and becoming non-uniform in the plane. This can further improve the in-plane uniformity of the film thickness on the wafer W as compared with the conventional one.
As shown in fig. 9, in the first heat treatment step, it is needless to say that the exhaust from the outer periphery exhaust part 230 and the outer side exhaust part 240 may be continued from the preparation step to the second heat treatment step. According to the present embodiment, since the outer peripheral exhaust part 230 and the outer exhaust part 240 are formed outside the heat treatment space S, no gas flow is formed in the treatment space, and the film thickness on the wafer W is not affected.
Further, by continuing to exhaust the atmosphere outside the heat treatment space S by the outer peripheral exhaust portion 230 during the heat treatment, the atmosphere outside the lid body 220 can be easily taken in through the gap D2, and an exhaust flow as an air curtain can be formed on the outer periphery of the suspended portion 220b of the lid body 220. This makes it possible to isolate the influence of the outside on the heat treatment space S, for example, the heat influence, and stabilize the reaction in the heat treatment space S, thereby further improving the in-plane uniformity of the coating film. In the embodiment, since the height position of the lower end surface 225d of the hanging portion 225b of the outer extension portion 225 is set higher than the lower surface 220c of the hanging portion 220b of the lid body 220, the gas can be guided more effectively from the outside to the outer peripheral exhaust portion 230, and thus the gas curtain can be formed appropriately.
In the above example, the outer extending portion 225 is formed on the outer periphery of the lid 220 to form the outer periphery exhaust portion 230 with the lid 220, but another lid may be provided separately on the left side of the lid 220 to form the outer periphery exhaust portion 230 between both lids that move integrally up and down.
After the temperature of the wafer W placed on the hot plate 201 reaches the crosslinking temperature of the coating film, that is, in the second heat treatment step, the exhaust from the central exhaust portion 221 is restarted. This allows, for example, even when impurities such as sublimates are generated during the heat treatment of the wafer W, the wafer W to be exhausted. Further, since the exhaust is started after the temperature of the wafer W reaches the crosslinking temperature as described above, the exhaust flow to the central exhaust portion 221 does not affect the film thickness of the coating film.
As shown in fig. 7 (c) and 9, when the exhaust of the atmosphere gas in the heat treatment space S is started by the central exhaust portion 221, that is, when the second heat treatment step is started, the ring body 210 is lowered by the ring body lifting mechanism 211, and a gap D may be formed between the upper surface 210a of the ring body 210 and the lower surface 220c of the hanging portion 220b of the lid body 220. Thus, the gap D functions as an exhaust gas flow path for exhausting gas from the lower periphery of the heat treatment space S, and the exhaust gas treatment in the heat treatment space S can be performed not only from the central exhaust gas portion 221 but also from the peripheral edge portion of the heat treatment space S by the outer peripheral exhaust gas portion 230 and the outer exhaust gas portion 240 at the same time, so that the impurity collection efficiency can be improved.
In addition, in the present embodiment, since the atmosphere is simultaneously exhausted from the outer exhaust portion 240 disposed outside the outer periphery of the ring body 210 in addition to the central exhaust portion 221 and the outer peripheral exhaust portion 230, even when the amount of impurities leaking from the heat treatment space S is large and the impurities are not completely recovered by the outer peripheral exhaust portion 230, it is possible to appropriately contribute to the recovery of the impurities and the like.
When the heat treatment of the wafer W is completed, as shown in fig. 8 (a), the ring body 210 is raised, and then the lid 220 is lifted by the lid lifting mechanism, and after the wafer W is raised by the support pins 207, the wafer W after the heat treatment is carried out to the outside of the heat treatment apparatus 40 by the carrier arm 70a of the wafer carrier apparatus 70.
When the carrying-out of the wafer W is completed, the lid 220 is lowered again as shown in fig. 8 (b), whereby the lid 220 is brought into contact with the ring body 210, and in this state, the exhaust from the central exhaust portion 221, the outer peripheral exhaust portion 230, and the outer exhaust portion 240 is continued to recover the residual impurities and the like in the heat treatment apparatus 40, and the interior of the heat treatment apparatus 40 is stabilized for receiving the wafer W after the reception. Thus, the series of heat treatment steps is completed.
In the above-described example, the timing of restarting the exhaust gas in the central exhaust portion 221, that is, the timing of starting the second heat treatment step, is controlled based on the wafer temperature, but the timing of starting the second heat treatment step may not be determined based on the temperature. For example, the inside of the heat treatment space S may be monitored by a camera or the like, and control may be performed according to the state of completion of the coating film, or the material of the coating film and other conditions may be stored in the control unit 100 in advance, the reaction rate of the film may be calculated based on the set conditions, and control may be performed based on the time calculated by the correlation calculation.
In the above embodiment, the ring body 210 is lowered in the second heat treatment step, and the exhaust of the atmosphere in the heat treatment space S by the outer peripheral exhaust portion 230 and the outer exhaust portion 240 is started. However, in order to prevent the heat treatment space S from being excessively filled with impurities such as sublimates in the first heat treatment step, the ring body 210 is lowered in the first heat treatment step, and the gap D is appropriately controlled so as to be formed. However, in this case, the width of the gap D needs to be controlled to such an extent that no airflow is generated in the heat treatment space S. As described above, by forming the gap D in the first heat treatment step, it is possible to prevent the heat treatment space S from being filled with excessive impurities and to prevent the generated impurities from being reattached to the wafer W.
In the above embodiment, the exhaust is performed from the outer circumference exhaust part 230 and the outer side exhaust part 240 all the time during the entire heat treatment, but the exhaust may be performed after the substrate temperature reaches the crosslinking temperature of the coating film as in the center exhaust part 221, that is, after the second heat treatment step. By controlling in this manner, for example, when a gap is formed in the contact portion between the upper surface 210a of the ring body 210 and the lower surface 210c of the suspended portion 210b of the lid body 220, it is possible to prevent the atmosphere in the heat processing space S from leaking from the gap by the exhaust gas from the outside and forming an exhaust gas flow in the heat processing space S, which affects the film uniformity.
The embodiments of the present invention have been described above, but the present invention is not limited to the examples. It is clear that those skilled in the art can conceive various modifications and adaptations within the scope of the technical idea described in the claims, and it should be understood that these also naturally fall within the technical scope of the present invention.
Industrial applicability
The present invention is useful in heating a substrate.
Description of the reference numerals
1: a substrate processing system; 40: a heat treatment device; 100: a control unit; 200: a placement part; 201: a hot plate; 202: a hot plate support portion; 210: an annular body; 211: a ring body lifting mechanism; 220: a cover body; 220 a: a top plate; 220 b: a hanging part; 220 c: a lower surface; 221: a central exhaust part; 230: an outer peripheral exhaust portion; 240: an outer exhaust part; 222. 241: an exhaust device; w: and (5) a wafer.
Claims (9)
1. A heat treatment apparatus for heat-treating a coating film formed on a substrate, the heat treatment apparatus comprising:
a mounting part for mounting a substrate;
a heating unit configured to heat the substrate placed on the placement unit;
an annular body provided so as to surround an outer periphery of the placement portion;
a lid body that covers the placement portion and forms a heat treatment space by a lower surface of the lid body coming into contact with or approaching the annular body;
a central exhaust unit disposed at a central portion of the lid body and configured to exhaust the heat treatment space; and
a control unit for controlling the heat treatment of the substrate placed on the placement unit,
wherein the control section controls to perform:
a first heat treatment step of heating the substrate without exhausting the inside of the heat treatment space in a state where the heat treatment space is formed and the substrate is present in the heat treatment space; and a second heat treatment step of heating the substrate while exhausting the gas from the heat treatment space by operating the central exhaust unit.
2. The heat treatment apparatus according to claim 1,
the lid body forming the heat treatment space has an outer peripheral exhaust portion outside a portion of the annular body in contact with or close to the lid body.
3. The heat treatment apparatus according to claim 2,
the outer peripheral exhaust portion has an annular shape that is open over the entire circumference on the lower surface side of the lid body.
4. The heat treatment apparatus according to claim 2,
the outer periphery exhaust unit operates in the second heat treatment step.
5. The heat treatment apparatus according to claim 4,
the annular body is movable in the vertical direction, and when the outer peripheral exhaust portion is operated, the annular body is lowered, and a gap larger than the gap at the time of the approach is formed between the annular body, the lower surface of the lid body, and the upper surface of the annular body.
6. The heat treatment apparatus according to claim 1,
the apparatus further includes an outer exhaust portion provided outside the outer periphery of the annular body and configured to exhaust the atmosphere gas leaked to the outside of the heat treatment space.
7. The heat treatment apparatus according to claim 6,
the outer exhaust unit operates at least during heating of the substrate regardless of the temperature of the substrate placed on the placement unit.
8. A heat treatment method for heat-treating a coating film formed on a substrate, in which heat treatment method,
a heat treatment space for accommodating the substrate and the mounting part in a state where the substrate is mounted on the mounting part having the heating function,
the heat treatment method comprises the following steps:
a first heat treatment step of heating the substrate without exhausting the inside of the heat treatment space in a state where the heat treatment space is formed and the substrate is present in the heat treatment space; and
and a second heat treatment step of exhausting the inside of the heat treatment space from at least above a central portion of the heat treatment space and heating the substrate.
9. The heat treatment method according to claim 8,
in the second heat treatment step, the inside of the heat treatment space is also exhausted from a peripheral portion of the inside of the heat treatment space to increase an exhaust gas amount.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-056754 | 2018-03-23 | ||
| JP2018056754 | 2018-03-23 | ||
| PCT/JP2019/009664 WO2019181605A1 (en) | 2018-03-23 | 2019-03-11 | Heat treatment device and heat treatment method |
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| CN111954923A true CN111954923A (en) | 2020-11-17 |
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| CN201980019855.XA Pending CN111954923A (en) | 2018-03-23 | 2019-03-11 | Heat treatment apparatus and heat treatment method |
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| JP (2) | JP6987968B2 (en) |
| KR (1) | KR20200133763A (en) |
| CN (1) | CN111954923A (en) |
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| WO (1) | WO2019181605A1 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2019181605A1 (en) | 2019-09-26 |
| JP7365387B2 (en) | 2023-10-19 |
| KR20200133763A (en) | 2020-11-30 |
| TWI784143B (en) | 2022-11-21 |
| JPWO2019181605A1 (en) | 2021-03-11 |
| JP6987968B2 (en) | 2022-01-05 |
| JP2022019880A (en) | 2022-01-27 |
| TW201941324A (en) | 2019-10-16 |
| TWI835357B (en) | 2024-03-11 |
| TW202307988A (en) | 2023-02-16 |
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