TWI784143B - Heat treatment device and heat treatment method - Google Patents

Abstract

In a heat treatment of a substrate, the occurrence of airflow in a heat treatment space is suppressed by not exhausting the treatment space until the substrate temperature reaches a crosslinking temperature.

A heat treatment device 40 comprises a mounting section 200 on which a wafer W is mounted, a ring body 210 which is provided surrounding the outer periphery of the mounting section 200 and is capable of moving freely up and down, a lid body 220 which covers the mounting section 200 and has a lower surface that abuts the ring body 210 to form a heat treatment space S, a central exhaust section 221 which is disposed at the center of the lid body 220 and exhausts the inside of the heat treatment space S, and a control section 100 which controls the heat treatment of the wafer W. After the heat treatment space S is formed, the control section 100 ensures that the inside of the heat treatment space S is not exhausted until the temperature of the wafer W mounted on the mounting section 200 has reached the crosslinking temperature, and is only exhausted by the central exhaust section 221 once the crosslinking temperature has been reached.

Description

Heat treatment device and heat treatment method

The present invention relates to a heat treatment device and a heat treatment method.

In the manufacturing process of semiconductor elements, the coating film is dried on a substrate on which a coating film such as a resist film is formed, such as a semiconductor wafer (in the following description, it may be simply referred to as a wafer). , and the semiconductor wafer is heat-treated.

This kind of heat treatment is conventionally carried out using a heat treatment device. During heating, since the uniformity of the film thickness is affected, it is necessary to pay attention to the air flow control and exhaust control in the heat treatment container. For example, when the exhaust process in the heat treatment container is performed only from the exhaust port provided above the central part of the wafer, due to the influence of the exhaust flow formed in the processing container, the coating film coated on the wafer The film thickness is thicker in the central part than in the outer peripheral part.

Therefore, in the heat treatment apparatus described in Patent Document 1, in addition to the central exhaust port provided at an upper position coincident with the center of the wafer placed on the mounting section, there is also a The upper position is located at the outer peripheral exhaust ports formed at equal intervals in the circumferential direction.

In Patent Document 1, when the wafer is heated to cause the cross-linking reaction, a small amount of exhaust flow is exhausted from the central exhaust port, and a large flow rate is exhausted from the outer peripheral exhaust port. In this way, the exhaust flow in the heat treatment container, especially at the center of the wafer can be controlled, and the swelling of the film at the center of the wafer can be suppressed, and the film thickness of the coating film formed on the wafer can ensure a good surface quality. Internal uniformity. [Prior Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2016-115919

[Problem to be solved by the invention]

However, in the heat treatment apparatus described in the above-mentioned Patent Document 1, although the in-plane uniformity of the entire film thickness can be improved, the processing container is discharged from both the central exhaust port and the peripheral exhaust port during the heat treatment. Gas, and the exhaust flow to the two exhaust ports is generated in the processing container. As a result, the film thickness of the central part and peripheral part of the coating film may be thicker than that of other parts. That is, there is room for further improvement in the in-plane uniformity of the film thickness on the wafer.

The present invention was made in view of this point, and an object of the present invention is to further improve the in-plane uniformity of the film thickness of the coating film on the substrate when the substrate is heat-treated. [means to solve the problem]

In order to achieve the above object, the present invention is a heat treatment device for heat treatment of a coating film formed on a substrate, which includes a mounting part, a heating part, an annular body, a cover body, a central exhaust part, and a control part: the The placing part carries the substrate; the heating part is used to heat the substrate placed on the placing part; the annular body is set to surround the outer periphery of the placing part; the cover covers the placing part, and its The bottom surface abuts or approaches the annular body to form a heat treatment space; the central exhaust part is arranged at the central part of the cover to exhaust the heat treatment space; the control part is placed on the placement The control of the heat treatment of the substrate of the control unit; the control unit is controlled to perform the first heat treatment process and the second heat treatment process, the first heat treatment process is formed in the heat treatment space and the substrate is placed in the heat treatment space In this state, the heating of the substrate is carried out without exhausting the heat treatment space, and the second heat treatment process is carried out while activating the central exhaust part to exhaust the heat treatment space. Substrate heating.

According to the present invention, the exhaust in the heat treatment space formed by contacting or approaching the cover body and the annular body is not carried out in the first heat treatment process. Next, in the subsequent second heat treatment process, a second heat treatment process is performed in which the substrate is heated while the central exhaust unit is operated to exhaust the heat treatment space. Therefore, the influence of the exhaust flow on the film thickness can be reduced, and the in-plane uniformity of the coated film can be improved. In addition, here, being close means, for example, a state in which a gap having a size of more than 0 mm to less than 1 mm exists between the cover body and the annular body.

The cover forming the heat treatment space may also have a peripheral exhaust portion on the outside of the contact or close part between the annular body and the cover.

The outer peripheral exhaust portion may also have a ring shape surrounding the entire peripheral opening on the bottom surface side of the cover.

The peripheral exhaust part can also be activated during the second heat treatment process.

The annular body can also move up and down freely. When the outer peripheral exhaust part is operated, the annular body descends, and a gap larger than the annular body is formed between the annular body, the bottom surface of the cover body and the top surface of the annular body. A gap close to the gap in time.

It may further include an outer exhaust portion disposed on the outer periphery of the annular body for exhausting gas leaking out of the heat treatment space.

The outer exhaust unit may operate at least while the substrate is being heated regardless of the temperature of the substrate placed on the mounting unit.

The present invention of another viewpoint is a heat treatment method of heat-treating a coating film formed on a substrate, in which a heating system for accommodating the mounting portion and the substrate is formed in a state where the substrate is mounted on a mounting portion having a heating function. A processing space, including a first heat treatment process and a second heat treatment process, the first heat treatment process forms the heat treatment space and the substrate is placed in the heat treatment space, without the heat treatment space The heating of the substrate is carried out in the case of internal exhaust; the second heat treatment process exhausts the heat treatment space at least from above the central part of the heat treatment space, and heats the substrate.

In the second heat treatment process, the heat treatment space may also be exhausted from the peripheral portion of the heat treatment space to increase the amount of exhaust gas. [Effect of the invention]

According to the present invention, when the substrate is heated, the in-plane uniformity of the film thickness of the coating film on the substrate can be improved more than conventionally.

[Form for implementing the invention]

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in this specification and drawings, the same code|symbol is attached|subjected to the element which has substantially the same functional structure, and repeated description is abbreviate|omitted.

>Substrate Processing System> First, the structure of the substrate processing system including the heat processing apparatus of this embodiment is demonstrated. FIG. 1 is a schematic plan view schematically showing the structure of a substrate processing system 1 . 2 and 3 are respectively a front view and a rear view schematically showing the internal structure of the substrate processing system 1 . In the substrate processing system 1, predetermined processing is performed on a wafer W as a substrate to be processed.

As shown in FIG. 1 , the substrate processing system 1 has a structure that includes a cassette station 10 that loads and unloads a cassette C that accommodates a plurality of wafers W, and has a plurality of processes for performing predetermined processes on wafers W. The processing station 11 of the device and the interface station 13 for transferring the wafer W between the processing station 11 and the adjacent exposure device 12 are connected integrally.

A cassette loading table 20 is provided at the cassette station 10 . The cassette mounting table 20 is provided with a plurality of cassette mounting plates 21 on which the cassette C is loaded when the cassette C is loaded and unloaded from the outside of the substrate processing system.

As shown in FIG. 1 , the cassette station 10 is provided with a wafer transfer device 23 movable on a transfer path 22 extending in the X direction. The wafer transfer device 23 can also move freely in the vertical direction and around the vertical axis (theta direction), and can be used between the cassette C on each cassette loading plate 21 and the transfer device of the third block G3 of the processing station 11 described later. The wafer W is transported between them.

In the processing station 11, a plurality of, for example, four blocks having various devices, that is, the first block G1 to the fourth block G4 are provided. For example, the second block G2 is provided on the back side of the processing station 11 (the positive direction side in the X direction in FIG. 1 , the upper side in the drawing). Also, the aforementioned third block G3 is provided on the side of the cassette station 10 of the processing station 11 (the side in the negative direction of the Y direction in FIG. 1 ), and on the side of the interface station 13 of the processing station 11 (the side in the positive direction of the Y direction in FIG. 1 ). A fourth block G4 is provided.

As shown in FIG. 2, for example, in the first block G1, a plurality of liquid processing devices, such as a development processing device 30 for performing development processing on a wafer W, forms an anti-reflection film ( Hereinafter referred to as "lower anti-reflection film"), a lower anti-reflection film forming device 31, a resist coating device 32 as a processing liquid coating device that applies a resist to a wafer W to form a processing film, and The upper anti-reflection film formation device 33 is arranged sequentially from below on which an anti-reflection film (hereinafter referred to as "upper anti-reflection film") is formed on the upper layer of the processed film of the wafer W.

For example, three development processing devices 30 , lower anti-reflection film forming devices 31 , resist solution coating devices 32 , and upper anti-reflection film forming devices 33 are arranged in a row in the horizontal direction. In addition, the number and arrangement of the image development processing devices 30, lower anti-reflection film forming devices 31, resist solution coating devices 32, and upper anti-reflection film forming devices 33 can be selected arbitrarily.

These image development processing devices 30 , lower anti-reflection film forming device 31 , resist coating device 32 , and upper anti-reflection film forming device 33 perform, for example, spin coating to apply a predetermined processing liquid onto the wafer W. . In spin coating, the processing liquid is sprayed onto the wafer W from, for example, a coating nozzle, and the wafer W is rotated to diffuse the processing liquid onto the surface of the wafer W.

As shown in FIG. 3 , in the second block G2, for example, the heat treatment device 40 of the embodiment of heat treatment of the wafer W is performed, and the hydrophobization treatment is performed to improve the fixation of the resist liquid and the wafer W. The processing device 41 and the peripheral exposure device 42 for exposing the outer peripheral portion of the wafer W are aligned in the vertical direction and the horizontal direction. The number and arrangement of these heat treatment devices 40 , hydrophobization treatment devices 41 , and peripheral exposure devices 42 can also be selected arbitrarily.

For example, a plurality of transfer devices 50 , 51 , 52 , 53 , 54 , 55 , and 56 are provided in order from below in the third block G3 . Moreover, a plurality of transfer devices 60, 61, 62 are provided in order from below in the fourth block G4.

As shown in FIG. 1 , a wafer transfer area E is formed in an area surrounded by the first block G1 to the fourth block G4 . In the wafer transfer area E, a plurality of wafer transfer devices 70 having transfer arms 70a movable in, for example, the Y direction, the X direction, the θ direction, and the vertical direction are arranged. The wafer transfer device 70 can move in the wafer transfer area E, and transfer the wafer W to the predetermined area in the surrounding first block G1, second block G2, third block G3, and fourth block G4. device.

Furthermore, as shown in FIG. 3 , in the wafer transfer area E, a shuttle transfer device 80 for linearly transferring the wafer W between the third block G3 and the fourth block G4 is provided.

The shuttle transport device 80 can move linearly in, for example, the Y direction in FIG. 3 . The shuttle transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer device 52 in the third block G3 and the transfer device 62 in the fourth block G4.

As shown in FIG. 1 , a wafer transfer device 81 is provided beside the positive direction side in the X direction of the third block G3 . The wafer transfer device 81 has a transfer arm 81 a that can move freely in, for example, the X direction, the θ direction, and the vertical direction. The wafer transfer device 81 moves up and down while supporting the wafer W by the transfer arm 81a, and can transfer the wafer W to each delivery device in the third block G3.

The interface station 13 is provided with a wafer transfer device 90 and delivery devices 91 and 92 . The wafer transfer device 90 has a transfer arm 90a that is movable in, for example, the Y direction, the θ direction, and the vertical direction. The wafer transfer device 90 supports the wafer W on, for example, the transfer arm 90a, and transfers the wafer W between the transfer devices, the transfer devices 91 and 92, and the exposure device 12 in the fourth block G4.

As shown in FIG. 1 , a control unit 100 is provided in the above substrate processing system 1 . The control unit 100 is, for example, a computer, and has a program storage unit (not shown). A program for controlling the processing of the wafer W in the substrate processing system 1 is stored in the program storage unit. In addition, the program can be recorded on a computer-readable recording medium such as a computer-readable hard disk (HD), floppy disk (FD), compact disk (CD), optical disk (MO), memory card, etc. It can be installed in the control unit 100 from this recording medium.

>Operation of Substrate Processing System> Next, wafer processing performed using the substrate processing system 1 configured as above will be described.

First, the cassette C containing a plurality of wafers W is carried into the cassette station 10 of the substrate processing system 1 and placed on the cassette loading plate 21 . Next, the wafers W in the cassette C are sequentially taken out by the wafer transfer device 23 and transferred to the transfer device 53 of the third block G3 of the processing station 11 .

The wafer W transferred to the delivery device 53 is transferred to the heat treatment device 40 in the second block G2 by the wafer transfer device 70, and subjected to temperature adjustment treatment. Next, the wafer W is transferred by the wafer transfer device 70 to, for example, the lower anti-reflection film forming device 31 of the first block G1, and the lower anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment device 40 in the second block G2, and after being heat-treated, it is returned to the transfer device 53 in the third block G3.

The wafer W sent back to the transfer device 53 is transferred to the transfer device 54 in the same third block G3 by the wafer transfer device 81 . Next, the wafer W is transferred by the wafer transfer device 70 to the hydrophobization treatment device 41 of the second block G2, and the hydrophobization treatment is performed.

The wafer W subjected to the hydrophobization treatment is transferred to the resist liquid coating device 32 by the wafer transfer device 70 , and a resist film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment device 40 by the wafer transfer device 70, and after prebaking, the wafer W is transferred to the delivery device 55 of the third block G3.

The wafer W transferred to the transfer device 55 of the third block G3 is transferred to the upper anti-reflection film forming device 33 by the wafer transfer device 70, and an upper anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment device 40 by the wafer transfer device 70 to be heated, and then the temperature is adjusted. After the temperature is adjusted, the wafer W is transferred to the peripheral exposure device 42 to perform peripheral exposure processing.

Next, the wafer W is transferred to the delivery device 56 of the third block G3 by the wafer transfer device 70 .

The wafer W transferred to the transfer device 56 in the third block G3 is transferred to the transfer device 52 by the wafer transfer device 81 , and transferred to the transfer device 62 in the fourth block G4 by the shuttle transfer device 80 . The wafer W transferred to the delivery device 62 is transferred to the exposure device 12 by the wafer transfer device 90 of the interface station 13, and the exposure process is performed with a predetermined pattern.

The exposed wafer W is transferred to the delivery device 60 in the fourth block G4 by the wafer transfer device 90 . Thereafter, the wafer is transferred to the heat treatment device 40 by the wafer transfer device 70, and post-exposure baking processing is performed.

Next, the wafer W is transferred to the development processing device 30 by the wafer transfer device 70 to be developed. After the development is completed, the wafer W is transferred to the heat treatment device 40 by the wafer transfer device 70 and post-baked.

Afterwards, the wafer W is transferred to the delivery device 50 of the third block G3 by the wafer transfer device 70 , and transferred to the cassette C on the predetermined cassette loading plate 21 by the wafer transfer device 23 of the cassette station 10 . In this way, a series of photolithography process ends.

>Structure of heat treatment device> Next, the structure of the heat treatment apparatus 40 according to the embodiment of the present invention will be described with reference to FIG. 4 .

FIG. 4 is a schematic side cross-sectional view schematically showing the structure of a heat treatment device 40 . As shown in FIG. 4 , the heat treatment apparatus 40 is provided with a loading unit 200 on which the wafer W is placed, an annular body 210 provided to surround the outer circumference of the loading unit 200 , and a The cover body 220 which contacts the annular body 210 and covers the mounting part 200 forms the heat treatment space S.

The loading unit 200 has a hot plate 201 on which the wafer W is directly placed, and the hot plate 201 is supported by a hot plate support unit 202 . The hot plate support part 202 is supported by a plurality of support columns 203 on a base 204 constituting the bottom of the heat treatment device 40 . A heater 205 as a heating unit is provided inside the hot plate 201 .

A support pin lifting mechanism 206 is provided on the base 204 to move the support pin 207 up and down. As a result, the support pins 207 freely protrude upward from the hot plate 201 , and the wafer W can be transferred to and from the transfer arm 70 a of the aforementioned wafer transfer device 70 .

The ring body 210 can move up and down freely by the ring body lifting mechanism 211 . And it is arranged so that the top surface 210 a of the annular body 210 is at the same height as the top surface of the hot plate 201 when the annular body 210 is lifted to the uppermost state.

The cover body 220 has a top plate 220 a forming a top surface of the heat treatment space S facing the hot plate 201 , and a hanging portion 220 b forming a side wall of the heat treatment space S. The cover body 220 is configured to be lifted and lowered freely by a cover body lifting mechanism (not shown in the figure), and the cover body lifting mechanism lowers the cover body 220, so that the bottom surface 220c of the hanging portion 220b is in contact with the top surface 210a of the ring body 210. Next, thereby, the heat treatment space S is formed.

Also, when forming the heat treatment space S, the annular body 210 is lowered by the annular body elevating mechanism 211, as shown in FIG. A gap D is formed between the faces 210a.

At the center of the top plate 220 a , that is, above the center of the wafer W placed on the hot plate 201 , a central exhaust unit 221 for exhausting the heat treatment space S is provided. The central exhaust part 221 is connected to the exhaust device 222 provided outside the heat treatment device 40 to discharge the gas in the heat treatment space S, for example.

A ring-shaped outer extension portion 225 is disposed on the outer periphery of the cover body 220 . The outer extension portion 225 is composed of an extension portion 225a and a hanging portion 225b, and an annular opening 225c with a bottom side opening is formed between the hanging portion 225b and the outer side of the hanging portion 220b of the cover 220 . The opening 225c leads to an exhaust portion (not shown in the figure), which constitutes the peripheral exhaust portion 230 of the present invention.

The height position of the lower end surface 225d of the hanging portion 225b of the outer extension portion 225 is set higher than the bottom surface 220c of the hanging portion 220b of the cover 220 . Therefore, when the heat treatment space S is formed by the contact between the cover body 220 and the annular body 210, the lower end surface 225d of the hanging portion 225b of the outer extension portion 225 is not in contact with the top surface 210a of the annular body 210 and the outer exhaust portion described later. The top surfaces of 240 abut against each other, and as shown in FIG. 5 and FIG. 6 , a gap D2 is formed.

An outer exhaust portion 240 is provided on the outer periphery of the annular body 210 for exhausting the gas leaking to the outer side of the heat treatment space S. As shown in FIG. The outer exhaust unit 240 is connected to an exhaust device 241 provided outside the heat treatment device 40 , for example.

>Action of heat treatment device> The heat treatment device 40 of the embodiment has the above-mentioned structure. Next, a heat treatment method using the heat treatment device 40 will be described. 7 and 8 are explanatory diagrams schematically showing the operation of the heat treatment device 40 in a series of heat treatment processes. FIG. A graph of the action over time. In addition, in FIG. 9 , the time point at which the first heat treatment process described later is started is 0 on the horizontal axis.

First, the central exhaust unit 221, the outer peripheral exhaust unit 230, and the outer exhaust unit 240 are exhausted by operating the exhaust device 222, the exhaust device 241, and the outer exhaust unit, so that the heat treatment device 40 is exhausted. The gas is stable. When the gas is stabilized in this way, the lid body 220 is raised as shown in FIG. 7( a ). In this state, the wafer W to be heated is transferred onto the hot plate 201 of the mounting unit 200 by the transfer arm 70 a of the wafer transfer device 70 of the substrate processing system 1 , and placed on the support pins 207 . Thereafter, the transfer arm 70 a retracts to the outside of the heat treatment apparatus 40 , and then the support pins 207 descend, and the wafer W is placed on the hot plate 201 . After the wafer W is placed on the hot plate 201, the cover body 220 is lowered by the cover lifting mechanism (not shown in the figure), so that the top surface 210a of the annular body 210 and the bottom surface of the hanging part 220b of the cover body 220 220c contact to form a heat treatment space S (preparation process). At this time, even if they are not completely in contact, some gaps that do not substantially exhaust air from the top surface 210a of the annular body 210 and the bottom surface 220c of the hanging portion 220b of the cover body 220, for example, more than 0 mm and less than 1 mm may be formed. , For example, a gap of 0.5 mm.

Next, as shown in FIG. 7(b) and FIG. 9, the operation of the exhaust device 222 is stopped, and the exhaust of the central exhaust part 221 is stopped, and the wafer placed on the hot plate 201 of the mounting part 200 is W starts the first heat treatment (first heat treatment process) performed by the heater 205 . In the first heat treatment process, the central exhaust unit 221 is not exhausted. That is, until the temperature of the wafer W reaches the crosslinking temperature of the coating film coated on the wafer W, the central exhaust unit 221 is not exhausted.

Then, after the wafer temperature reaches the crosslinking temperature, that is, the reaction of the coating film is stable, and after the influence of the air flow on the coating film is weakened, the operation of the exhaust device 222 is started again, and the exhaust of the central exhaust part 221 is implemented (the first step) 2 heat treatment process).

In this way, since the first heat treatment process, that is, during the period when the temperature of the wafer W reaches the crosslinking temperature of the coating film, the central exhaust part 221 in the heat treatment space S is not exhausted, so the heat treatment does not occur. An exhaust flow is formed in the space S. Therefore, it is possible to prevent the film thickness of the coating film from being affected by the exhaust flow generated in the heat treatment space S and being uneven in the plane. Thereby, the in-plane uniformity of the film thickness on the wafer W can be improved more than conventionally.

In addition, as shown in FIG. 9 , in the first heat treatment process, the exhaust from the peripheral exhaust part 230 and the outer exhaust part 240 can of course continue from the preparation process to the second heat treatment process. According to the present embodiment, since the peripheral exhaust portion 230 and the outer exhaust portion 240 are formed outside the heat processing space S, no air flow is formed in the processing space to affect the film thickness on the wafer W.

Then, during the heat treatment, the peripheral exhaust part 230 continuously exhausts the gas outside the heat treatment space S, so that the gas outside the cover body 220 can be easily taken in through the gap D2, and the gas in the hanging part 220b of the cover body 220 The outer periphery forms the exhaust flow as an air curtain. Thereby, the influence of the outside on the heat treatment space S, such as the influence of heat, can be blocked, the reaction in the heat treatment space S can be stabilized, and the in-plane uniformity of the coating film can be further improved. And in the embodiment, since the height position of the lower end surface 225d of the hanging portion 225b of the outer extension portion 225 is set to be higher than the bottom surface 220c of the hanging portion 220b of the cover body 220, the outer peripheral air exhaust portion 230 can effectively guide air from the outside. Air, whereby an air curtain can be suitably formed. In addition, in the aforementioned example, the outer extension portion 225 is formed on the outer periphery of the cover body 220, and the outer peripheral exhaust portion 230 is formed between the cover body 220. Instead, another cover body is provided on the left side of the cover body 220, and The outer peripheral exhaust part 230 may be formed between the two covers which move up and down integrally.

After the temperature of the wafer W placed on the hot plate 201 reaches the crosslinking temperature of the coating film, that is, in the second heat treatment process, the exhaust of the central exhaust unit 221 is restarted. Thereby, even when impurities such as sublimates are generated during the heat treatment of the wafer W, for example, the impurities can be discharged. Also, as mentioned above, since the exhaust gas starts after the temperature of the wafer W reaches the crosslinking temperature, the exhaust flow to the central exhaust part 221 will not affect the film thickness of the coating film.

Again, as shown in Fig. 7 (c) and Fig. 9, when the gas discharge of the heat treatment space S performed by the central exhaust part 221 is started, that is, when the second heat treatment process is started, an annular body The lifting mechanism 211 lowers the annular body 210 to form a gap D between the top surface 210 a of the annular body 210 and the bottom surface 220 c of the hanging portion 220 b of the cover body 220 . Thereby, the gap D has the function of a flow path for exhausting from the lower periphery of the heat treatment space S, and the exhaust process in the heat treatment space S is not only performed from the central exhaust part 221, but also can be performed from the outer periphery exhaust part 230 and the outer side. The exhaust part 240 is carried out simultaneously from the peripheral part of the heat treatment space S, so the impurity recovery efficiency can be improved.

In addition, in this embodiment, since in addition to the central exhaust portion 221 and the outer peripheral exhaust portion 230, the gas is simultaneously discharged from the outer exhaust portion 240 arranged outside the outer circumference of the annular body 210, so even if the gas is discharged from the heating When the amount of impurities leaked from the processing space S is too large to be completely recovered by the peripheral exhaust part 230, it can also appropriately contribute to the recovery of these impurities.

When the heat treatment of the wafer W is finished, as shown in FIG. The transfer arm 70 a of the wafer transfer device 70 carries out the heat-treated wafer W to the outside of the heat treatment device 40 .

When the unloading of the wafer W is completed, as shown in FIG. 8( b ), the cover body 220 is lowered so that it abuts against the annular body 210. In this state, the central exhaust part 221 and the outer peripheral exhaust part The gas unit 230 and the outer exhaust unit 240 continue to exhaust, recover the residual impurities in the heat processing device 40, and stabilize the heat processing device 40 to receive the next wafer W. In this way, a series of heat treatment process ends.

In addition, in the example described above, the restart time point of the exhaust of the central exhaust part 221, that is, the time point when the second heat treatment process is started is controlled according to the wafer temperature, and the time point when the second heat treatment process is started may not be Judging by temperature. For example, it can also be configured to monitor the heat treatment space S with a camera, etc., and control according to the completion status of the coating film. The reaction speed of the membrane is controlled according to the time calculated by this calculation.

In addition, in the above embodiment, the annular body 210 is lowered in the second heat treatment process, and gas discharge from the heat treatment space S by the outer periphery exhaust unit 230 and the outer exhaust unit 240 is started. However, in order not to overfill the heat treatment space S with impurities such as sublimates during the first heat treatment process, the annular body 210 may also be lowered during the first heat treatment process, and the gap D is appropriately controlled to form. However, at this time, it is necessary to control the width of the gap D to such an extent that no air flow is generated in the heat treatment space S. In this way, by forming the gap D in the first heat treatment process, the heat treatment space S can be prevented from being filled with excessive impurities, and the impurities can be prevented from adhering to the wafer W again.

Also, in the above-mentioned embodiment, the exhaust from the outer peripheral exhaust unit 230 and the outer exhaust unit 240 has been operating throughout the heat treatment, and it can also be controlled so that the temperature of the substrate reaches the point where the coating film is reached in the same way as the central exhaust unit 221. After the cross-linking temperature, that is, after entering the second heat treatment process, it will start. By such control, for example, when there is a gap between the top surface 210a of the annular body 210 and the bottom surface 210c of the hanging portion 210b of the cover 220, the gas in the heat treatment space S can be prevented from being exhausted from the outside. This gap leaks out, forming an exhaust flow in the heat treatment space S, which affects the uniformity of the coating film.

As mentioned above, the embodiment of the present invention has been described, but the present invention is not limited to this example. It is obvious that various modifications or amendments can be conceived within the scope of the technical ideas described in the scope of the claims as long as they are in the industry, and it can be understood that these naturally also belong to the technical scope of the present invention. [Industrial availability]

The present invention is useful when heating a substrate.

1‧‧‧substrate processing system 10‧‧‧Crystal Station 11‧‧‧Processing station 12‧‧‧Exposure device 13‧‧‧interface station 20‧‧‧Case holder 21‧‧‧Case loading plate 22‧‧‧Transportation path 23‧‧‧Wafer transfer device 30‧‧‧Image processing device 31‧‧‧The bottom anti-reflection film forming device 32‧‧‧Resist solution coating device 33‧‧‧Upper part anti-reflection film forming device 40‧‧‧heat treatment device 41‧‧‧hydrophobic treatment device 42‧‧‧peripheral exposure device 50‧‧‧Transfer device 51‧‧‧Transfer device 52‧‧‧Transfer device 53‧‧‧Transfer device 54‧‧‧Transfer device 55‧‧‧Transfer device 56‧‧‧Transfer device 60‧‧‧Transfer device 61‧‧‧Transfer device 62‧‧‧Transfer device 70‧‧‧Wafer transfer device 70a‧‧‧Transfer arm 80‧‧‧Shuttle conveying device 81‧‧‧Wafer transfer device 81a‧‧‧Transfer arm 90‧‧‧Wafer transfer device 90a‧‧‧Transfer arm 91‧‧‧Transfer device 92‧‧‧Transfer device 100‧‧‧Control Department 200‧‧‧Loading part 201‧‧‧Hot plate 202‧‧‧Hot plate support 203‧‧‧Support column 204‧‧‧Abutment 205‧‧‧Heater 206‧‧‧Support pin lifting mechanism 207‧‧‧Support pin 210‧‧‧ring body 210a‧‧‧top 211‧‧‧Ring body lifting mechanism 220‧‧‧Cover 220a‧‧‧top plate 220b‧‧‧hanging part 220c‧‧‧Bottom 221‧‧‧central exhaust 222‧‧‧Exhaust device 225‧‧‧outer extension 225a‧‧‧Extension 225b‧‧‧hanging part 225c‧‧‧opening 225d‧‧‧lower end face 230‧‧‧Peripheral exhaust part 240‧‧‧Outside exhaust 241‧‧‧exhaust device C‧‧‧crystal case D‧‧‧Gap D2‧‧‧Gap E‧‧‧wafer transfer area G1‧‧‧1st block G2‧‧‧Block 2 G3‧‧‧Block 3 G4‧‧‧4th block S‧‧‧heating treatment space W‧‧‧Wafer X‧‧‧direction Y‧‧‧direction θ‧‧‧direction

[ Fig. 1 ] is a plan view schematically showing a substrate processing system including a heat processing apparatus according to this embodiment. [ FIG. 2 ] is a front view of the substrate processing system in FIG. 1 . [ Fig. 3 ] is a rear view of the substrate processing system in Fig. 1 . [ FIG. 4 ] is an explanatory diagram schematically showing a side cross-section showing an outline of the structure of the heat treatment apparatus according to the present embodiment. [ FIG. 5 ] is an explanatory diagram schematically showing a heat treatment space formed in the heat treatment apparatus of FIG. 4 . [ Fig. 6 ] is an explanatory diagram schematically showing a state in which the annular body is lowered in the heat treatment apparatus of Fig. 5 . [ Fig. 7 ] (a) to (c) are explanatory diagrams showing the flow of a series of operations of the heat treatment apparatus of this embodiment. [FIG. 8] (a) and (b) are explanatory diagrams which show the flow of a series of operations of the heat treatment apparatus of this embodiment. [ Fig. 9 ] is a graph showing the flow of a series of operations during wafer heating in the heat treatment apparatus of the present embodiment, and the substrate temperature as a function of time.

40: Heat treatment device

200: loading part

201: hot plate

202: hot plate support part

203: support column

204: Abutment

205: heater

206: Support pin lifting mechanism

207: support pin

210: ring body

210a: top surface

211: Annular Body Lifting Mechanism

220: cover body

220a: top plate

220b: hanging part

220c: bottom surface

221: central exhaust

222: exhaust device

225: Outer extension

225a: extension

225b: hanging part

225c: opening

230: Peripheral exhaust part

240: Outer exhaust part

241: exhaust device

W: Wafer

Claims (9)

A heat treatment device for heat treatment of a coating film formed on a substrate, comprising: a mounting portion for mounting the substrate; a heating portion for heating the substrate mounted on the mounting portion; an annular body, Set around the outer periphery of the loading part; the cover covers the loading part, and its bottom surface abuts or approaches the annular body to form a heat treatment space; the central exhaust part is arranged on the cover The central part can exhaust the heat treatment space; and the control part controls the heat treatment of the substrate placed on the mounting part; the control part controls to implement the first heat treatment process and the second heating The treatment process, the first heat treatment process is to heat the substrate under the condition that the heat treatment space is formed and the substrate is placed in the heat treatment space without exhausting the heat treatment space; The second heat treatment process is to heat the substrate while activating the central exhaust part to exhaust the heat treatment space; the cover forming the heat treatment space is between the annular body and the cover. The outside of the abutting or proximate portion has a peripheral vent. In the heat treatment device as claimed in claim 1 of the scope of the patent application, wherein the outer peripheral exhaust part has a ring shape around the entire peripheral opening on the bottom surface side of the cover body. As the heat treatment device of claim 1 or 2 of the patent scope, wherein, the peripheral exhaust part operates during the second heat treatment process. Such as the heat treatment device of item 3 of the scope of the patent application, wherein the annular system can move up and down freely, and when the outer peripheral exhaust part is actuated, the annular body descends, and the annular body, the bottom surface of the cover and the A gap larger than the gap when approaching is formed between the top surfaces of the annular bodies. The heat treatment device of item 1 or item 2 of the scope of the patent application includes: an outer exhaust part, which is arranged outside the outer circumference of the annular body, and is used to discharge the gas leaked out of the heat treatment space. In the heat treatment apparatus according to claim 5 of the present invention, the outer exhaust unit operates at least while heating the substrate regardless of the temperature of the substrate placed on the placement unit. A heat treatment method for heat-treating a coating film formed on a substrate, forming a heat treatment space for accommodating the mounting portion and the substrate in a state where the substrate is mounted on a mounting portion having a heating function, and Including the following process: the first heat treatment process, in the state where the heat treatment space is formed and the substrate is placed in the heat treatment space, the substrate is heated without exhausting the heat treatment space; and In the second heat treatment process, the heating of the substrate is performed while exhausting the heat treatment space from at least above the central part of the heat treatment space; The distance between the annular body provided on the outer periphery and the cover covering the mounting portion and whose bottom surface is in contact with or close to the annular body to form a heat treatment space, compared with the first heat treatment process is In a wider state, the air is exhausted from the peripheral air exhaust part provided on the outside of the bottom surface of the part of the cover closest to the annular body and at a position higher than the bottom surface of the cover. The heat treatment method according to claim 7 of the patent claims, wherein while exhausting from the outer peripheral exhaust part, exhaust is also performed from an outer exhaust part located outside the outer peripheral exhaust part. The heat treatment method of claim 7, wherein, in the second heat treatment process, the heat treatment space is exhausted from the peripheral portion of the heat treatment space to increase the exhaust volume.

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