JP3484035B2 - Substrate heat treatment method and apparatus - Google Patents
Substrate heat treatment method and apparatusInfo
- Publication number
- JP3484035B2 JP3484035B2 JP3265097A JP3265097A JP3484035B2 JP 3484035 B2 JP3484035 B2 JP 3484035B2 JP 3265097 A JP3265097 A JP 3265097A JP 3265097 A JP3265097 A JP 3265097A JP 3484035 B2 JP3484035 B2 JP 3484035B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- substrate
- exhaust
- space
- treatment space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体ウエハ、
液晶表示装置（ＬＣＤ）用あるいはフォトマスク用のガ
ラス基板などの基板の表面にフォトレジスト、ＳＯＧ材
などの塗布液を塗布した後において、基板を熱処理プレ
ート上に載置して熱処理する基板の熱処理方法、ならび
に、その方法を実施するために使用される基板の熱処理
装置に関する。TECHNICAL FIELD The present invention relates to a semiconductor wafer,
Heat treatment of a substrate such as a glass substrate for a liquid crystal display (LCD) or a photomask, which is performed by applying a coating solution such as a photoresist or an SOG material on the surface of the substrate and then placing the substrate on a heat treatment plate for heat treatment. The present invention relates to a method, and an apparatus for heat treating a substrate used to carry out the method.
【０００２】[0002]
【従来の技術】基板の表面にフォトレジストを塗布した
後に基板をベーク処理したり、表面に化学増幅型レジス
トが塗布された基板を露光後ベーク（ＰＥＢ）処理した
りする場合などには、ホットプレートを備えた熱処理装
置が使用される。このベーク処理を行う場合には、ホッ
トプレート上に基板をホットプレート上面から僅かに浮
かせた状態で載置し、あるいは、ホットプレートの上面
に基板を直接に載置し、基板を均一に加熱するために、
基板の表面から所定間隔をあけて基板表面と平行にベー
クカバーを配置して、基板の上方をベークカバーで覆う
ようにしている。また、ホットプレートによる基板の加
熱に伴って、基板の表面に塗布された塗布液から溶剤が
蒸発するが、その発生した溶剤蒸気が周囲へ拡散しない
ようにするため、排気手段により、例えばホットプレー
トの周囲から下方へ吸引して、ホットプレートとベーク
カバーとの間の熱処理空間の排気を行うようにしてい
る。そして、従来は、基板を熱処理している期間中、熱
処理空間の排気を常時行うようにしていた。2. Description of the Related Art When a photoresist is applied to the surface of a substrate, the substrate is baked, or a substrate having a chemically amplified resist applied to the surface is subjected to a post-exposure bake (PEB) treatment. A heat treatment device with a plate is used. When performing this baking process, the substrate is placed on the hot plate in a state of being slightly floated from the top face of the hot plate, or the substrate is placed directly on the top face of the hot plate to uniformly heat the substrate. for,
A bake cover is arranged parallel to the surface of the substrate at a predetermined distance from the surface of the substrate so that the upper side of the substrate is covered with the bake cover. Further, as the substrate is heated by the hot plate, the solvent evaporates from the coating liquid applied to the surface of the substrate, but in order to prevent the generated solvent vapor from diffusing to the surroundings, for example, the hot plate is used. The heat treatment space between the hot plate and the bake cover is exhausted by sucking downward from the periphery of the. In the past, the heat treatment space was constantly evacuated during the heat treatment of the substrate.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、基板の
熱処理中にホットプレートの周囲などから熱処理空間の
排気を行うことは、基板の面内温度の均一性を損う大き
な原因となっていた。そして、基板の面内温度の均一性
が損われると、基板の各位置での溶剤の蒸発量に差を生
じて、フォトレジストの膜厚均一性に悪影響を及ぼした
り、ＰＥＢ処理後に現像処理されたレジスト膜における
線幅均一性に悪影響を及ぼしたりすることになる。However, exhausting the heat treatment space from around the hot plate during heat treatment of the substrate has been a major cause of impairing the uniformity of the in-plane temperature of the substrate. When the uniformity of the in-plane temperature of the substrate is impaired, the evaporation amount of the solvent at each position of the substrate becomes different, which adversely affects the uniformity of the film thickness of the photoresist, or the development process is performed after the PEB process. In addition, the line width uniformity in the resist film may be adversely affected.
【０００４】この発明は、以上のような事情に鑑みてな
されたものであり、熱処理プレート上に載置された基板
の上方をカバーで覆って基板を熱処理する場合に、基板
の面内温度を均一にして、熱処理品質を向上させること
ができる基板の熱処理方法を提供すること、ならびに、
その方法を好適に実施することができる基板の熱処理装
置を提供することを目的とする。The present invention has been made in view of the above circumstances, and when the substrate is heat-treated by covering the upper side of the substrate placed on the heat treatment plate with a cover, the in-plane temperature of the substrate is controlled. To provide a method for heat treatment of a substrate which is uniform and can improve heat treatment quality, and
It is an object of the present invention to provide a substrate heat treatment apparatus which can suitably carry out the method.
【０００５】[0005]
【課題を解決するための手段】請求項１に係る発明は、
熱処理プレートの上面に基板を直接にもしくは間隔を設
けて載置し、前記熱処理プレートの上方を覆うようにカ
バーを配置して熱処理プレートとの間で熱処理空間を形
成し、その熱処理空間の排気を行って、基板を熱処理す
る基板の熱処理方法において、基板の熱処理の内容に応
じて、熱処理中の全期間もしくは一部の期間における前
記熱処理空間の排気を停止させることを特徴とする。The invention according to claim 1 is
The substrate is placed directly on the upper surface of the heat treatment plate or at intervals, and a cover is arranged so as to cover the heat treatment plate to form a heat treatment space between the heat treatment plate and the heat treatment space. In the substrate heat treatment method of performing the heat treatment of the substrate, the exhaust of the heat treatment space is stopped during the entire period or a part of the period during the heat treatment according to the content of the heat treatment of the substrate.
【０００６】請求項２に係る発明は、請求項１記載の熱
処理方法において、熱処理空間の排気を停止した状態か
ら熱処理空間の排気を開始する時機を、基板の熱処理が
完了する直前から完了した直後までの間とすることを特
徴とする。According to a second aspect of the present invention, in the heat treatment method according to the first aspect, the timing of starting the evacuation of the heat treatment space from the state where the evacuation of the heat treatment space is stopped is immediately before or after the heat treatment of the substrate is completed. It is characterized by being up to.
【０００７】請求項３に係る発明は、請求項１記載の熱
処理方法において、基板の熱処理中の全期間にわたって
熱処理空間の排気を停止し、基板の熱処理が完了した直
後から前記熱処理空間の排気を行うことを特徴とする。According to a third aspect of the present invention, in the heat treatment method according to the first aspect, the exhaust of the heat treatment space is stopped for the entire period during the heat treatment of the substrate, and the exhaust of the heat treatment space is performed immediately after the heat treatment of the substrate is completed. It is characterized by performing.
【０００８】請求項４に係る発明は、上面に基板を直接
にもしくは間隔を設けて載置する熱処理プレートと、こ
の熱処理プレートの上方を覆うように配置されて熱処理
プレートとの間で熱処理空間を形成するカバーと、排気
吸引源に流路接続され、前記熱処理空間の排気を行うた
めの排気路とを備えた基板の熱処理装置において、前記
排気路に、前記排気吸引源に対する連通状態と遮断状態
とを切り換える切換え手段を設け、基板の熱処理の内容
に応じて、前記熱処理空間の排気および排気停止の期間
設定を入力するための設定入力手段と、この設定入力手
段によって入力された熱処理空間の排気および排気停止
の期間設定を記憶する記憶手段と、この記憶手段に記憶
された前記期間設定に基づいて、前記熱処理空間が所望
の各時期に排気されまたは排気停止されるように前記切
換え手段を制御する制御手段とを備えたことを特徴とす
る。According to a fourth aspect of the present invention, there is provided a heat treatment space between the heat treatment plate on which the substrate is placed directly or on the upper surface of the heat treatment plate and the heat treatment plate which is arranged so as to cover the heat treatment plate. In a heat treatment apparatus for a substrate, which comprises a cover to be formed and an exhaust passage connected to an exhaust suction source for exhausting the heat treatment space, in the exhaust passage, a communication state and a cutoff state with respect to the exhaust suction source. And a setting input means for inputting a period setting of the evacuation of the heat treatment space and an evacuation stop according to the content of the heat treatment of the substrate, and the exhaust of the heat treatment space input by the setting input means. And a storage unit that stores the setting of the period for stopping the exhaust, and the heat treatment space is exhausted at each desired time based on the period setting stored in the storage unit. Or is characterized in that a control means for controlling said switching means so that the exhaust is stopped.
【０００９】請求項１に係る発明の基板の熱処理方法に
よると、熱処理プレート上に基板を載置し熱処理プレー
トの上方をカバーで覆って基板を熱処理する場合に、基
板の熱処理の内容に応じて、熱処理中における熱処理空
間の排気が全期間にわたりあるいは一部の期間において
停止されるので、熱処理空間の排気によって基板の面内
温度の均一性が阻害されることが無くなりもしくは最小
限に抑えられる。According to the substrate heat treatment method of the first aspect of the present invention, when the substrate is placed on the heat treatment plate and the upper portion of the heat treatment plate is covered with the cover to heat the substrate, the heat treatment of the substrate is performed according to the contents of the heat treatment of the substrate. Since the exhaust of the heat treatment space during the heat treatment is stopped for the entire period or a part of the period, the in-plane temperature uniformity of the substrate is not obstructed or minimized by the exhaust of the heat treatment space.
【００１０】請求項２に係る発明の熱処理方法では、基
板の熱処理中における熱処理空間の排気が全期間にわた
りもしくはほぼ全期間にわたって停止されるので、熱処
理空間の排気によって基板の面内温度の均一性が阻害さ
れることが無くなりもしくはほとんど無くなる。そし
て、基板の熱処理が完了する直前から完了した直後まで
の間に熱処理空間の排気が開始されるので、熱処理中に
基板の表面上の塗布液から蒸発して熱処理空間に滞留し
た溶剤蒸気は、熱処理空間から速やかに排気される。In the heat treatment method according to the second aspect of the present invention, since the exhaust of the heat treatment space during the heat treatment of the substrate is stopped for the entire period or for almost the entire period, the in-plane temperature uniformity of the substrate is maintained by the exhaust of the heat treatment space. Are no longer or almost never disturbed. Then, since the exhaust of the heat treatment space is started from immediately before the heat treatment of the substrate is completed to immediately after the heat treatment of the substrate is completed, the solvent vapor evaporated from the coating liquid on the surface of the substrate during the heat treatment and staying in the heat treatment space is The heat treatment space is quickly exhausted.
【００１１】請求項３に係る発明の熱処理方法では、基
板の熱処理中の全期間にわたって熱処理空間の排気が停
止されるので、熱処理空間の排気によって基板の面内温
度の均一性が阻害されることが無くなる。そして、基板
の熱処理が完了した直後から熱処理空間の排気が行われ
るので、熱処理中に基板の表面上の塗布液から蒸発して
熱処理空間に滞留した溶剤蒸気は、熱処理空間から速や
かに排気される。In the heat treatment method of the third aspect of the present invention, since the exhaust of the heat treatment space is stopped for the entire period during the heat treatment of the substrate, the in-plane temperature uniformity of the substrate is hindered by the exhaust of the heat treatment space. Disappears. Then, since the heat treatment space is evacuated immediately after the heat treatment of the substrate is completed, the solvent vapor evaporated from the coating liquid on the surface of the substrate and staying in the heat treatment space during the heat treatment is quickly exhausted from the heat treatment space. .
【００１２】請求項４に係る発明の基板の熱処理装置で
は、熱処理プレートの上面に基板が載置され、熱処理プ
レートの上方がカバーで覆われて熱処理プレートとカバ
ーとの間に熱処理空間が形成され、この状態で基板の熱
処理が行われる。この場合、制御手段により、設定入力
手段によって入力され記憶手段に記憶された熱処理空間
の排気および排気停止の期間設定に基づいて切換え手段
が制御され、熱処理空間の排気を行うための排気路が排
気吸引源に連通した状態と排気吸引源と遮断された状態
とが適宜切り換えられて、熱処理空間が所望の各時期に
排気され排気停止される。したがって、基板の熱処理の
内容に応じて、熱処理中における熱処理空間の排気が適
当な期間に停止されるようにすることができるため、熱
処理空間の排気によって基板の面内温度の均一性が阻害
されることを無くしもしくは最小限に抑えることが可能
になる。In the substrate heat treatment apparatus of the fourth aspect of the present invention, the substrate is placed on the upper surface of the heat treatment plate, the upper portion of the heat treatment plate is covered with the cover, and the heat treatment space is formed between the heat treatment plate and the cover. In this state, heat treatment of the substrate is performed. In this case, the control means controls the switching means based on the period setting of the exhaust of the heat treatment space and the stop of the exhaust which are input by the setting input means and stored in the storage means, and the exhaust passage for exhausting the heat treatment space is exhausted. A state in which the heat treatment space is communicated with the suction source and a state in which the suction source is cut off are appropriately switched, and the heat treatment space is evacuated and exhausted at each desired time. Therefore, the evacuation of the heat treatment space during the heat treatment can be stopped in an appropriate period according to the content of the heat treatment of the substrate, so that the in-plane temperature uniformity of the substrate is hindered by the evacuation of the heat treatment space. Can be eliminated or minimized.
【００１３】[0013]
【発明の実施の形態】以下、この発明の好適な実施形態
について図面を参照しながら説明する。BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below with reference to the drawings.
【００１４】図１は、この発明に係る基板の熱処理方法
を実施するのに使用される熱処理装置の１例を示す概略
構成図である。この図においては、ベークカバーの支持
機構や昇降機構の図示を省略している。FIG. 1 is a schematic block diagram showing an example of a heat treatment apparatus used for carrying out the substrate heat treatment method according to the present invention. In this figure, the support mechanism for the bake cover and the lifting mechanism are not shown.
【００１５】この熱処理装置は、表面に塗布液、例えば
フォトレジストやＳＯＧ材などが塗布された基板Ｗを直
接にもしくは間隔を設けて上面に載置するホットプレー
ト１０を有し、ホットプレート１０の上方に、それを覆
うようにベークカバー１２が配置されていて、ベークカ
バー１２とホットプレート１０との間に熱処理空間が形
成されるようになっている。ホットプレート１０および
ベークカバー１２の周囲は、チャンバ１４によって囲ま
れており、ホットプレート１０の周囲に、その全周にわ
たって排気通路１６の排気口が開設され、排気通路１６
は、排気路２０を通して排気吸引源に流路接続されてい
る。そして、ホットプレート１０の周囲から雰囲気ガス
が下方へ吸引されて、ホットプレート１０とベークカバ
ー１２との間の熱処理空間の排気が行われる。This heat treatment apparatus has a hot plate 10 on which a substrate W having a surface coated with a coating liquid, such as a photoresist or an SOG material, is placed directly or at an interval on the upper surface. The bake cover 12 is disposed above the bake cover 12 so that a heat treatment space is formed between the bake cover 12 and the hot plate 10. The hot plate 10 and the bake cover 12 are surrounded by a chamber 14, and an exhaust port of an exhaust passage 16 is opened around the hot plate 10 around the entire circumference thereof.
Are connected to the exhaust suction source through the exhaust passage 20. Then, the atmospheric gas is sucked downward from around the hot plate 10, and the heat treatment space between the hot plate 10 and the bake cover 12 is exhausted.
【００１６】また、この熱処理装置では、図示していな
いが、ベークカバー１２の内部が仕切られてガス分配室
が形設されており、必要により、不活性ガス、例えば窒
素ガスの供給源からガス供給路２２を通ってベークカバ
ー１２内部のガス分配室へ窒素ガスを供給し、ガス分配
室から多数のガス吹出し孔（図示せず）を通ってホット
プレート１０上の基板Ｗの表面全体へ均一に窒素ガスを
供給することができる構成となっている。また、図示し
ていないが、ベークカバー１２は支持機構によって支持
され、支持機構が昇降機構によって上下方向へ移動可能
とされている。これにより、ベークカバー１２は、図示
しているようにホットプレート１０の上方を覆う処理位
置と、ホットプレート１０から上方へ離間した図示して
いない待機位置との間で、上昇および下降するように支
持されている。Further, in this heat treatment apparatus, although not shown, the inside of the bake cover 12 is partitioned to form a gas distribution chamber, and if necessary, a gas from a supply source of an inert gas, such as nitrogen gas, may be supplied. Nitrogen gas is supplied to the gas distribution chamber inside the bake cover 12 through the supply passage 22, and is uniformly distributed over the entire surface of the substrate W on the hot plate 10 through a number of gas outlets (not shown) from the gas distribution chamber. It is configured to be able to supply nitrogen gas to. Although not shown, the bake cover 12 is supported by a supporting mechanism, and the supporting mechanism is vertically movable by an elevating mechanism. As a result, the bake cover 12 moves up and down between the processing position that covers the upper side of the hot plate 10 as shown in the figure and the standby position (not shown) that is separated upward from the hot plate 10. It is supported.
【００１７】ホットプレート１０の周囲に配設された排
気通路１６と排気吸引源とを流路接続させている排気路
２０には、排気通路１６を排気吸引源に連通させた状態
と排気通路１６を排気吸引源と遮断した状態とに切り換
える開閉弁２４が介設されている。開閉弁２４は、コン
トローラ２６に接続されており、コントローラ２６は、
マイクロコンピュータのＣＰＵ２８に接続されている。
また、ＣＰＵ２８には、キーボード３０およびメモリ３
２が接続されている。そして、予め、基板の内容に応じ
て、熱処理空間の排気を行う期間および排気を停止する
期間を設定し、その期間設定を含む熱処理条件をキーボ
ード３０によって入力しておく。この設定入力された熱
処理条件は、プログラムされたレシピとしてメモリ３２
に記憶される。例えば、基板の熱処理中の大部分の期間
は熱処理空間の排気を停止しておき、基板の熱処理が完
了する直前から熱処理空間の排気を開始するとか、基板
の熱処理中の全期間にわたって熱処理空間の排気を停止
しておき、基板の熱処理が完了した時点もしくはその直
後から熱処理空間の排気を開始するとか、基板の表面に
塗布された塗布液から蒸発する溶剤蒸気の量が熱処理中
を通して多いような基板の熱処理を行うときには、熱処
理空間の排気を常時行うようにし、あるいは、熱処理の
開始当初は排気を停止しておき、或る程度時間が経過し
た時点で熱処理空間の排気を開始する、といった熱処理
空間の排気および排気停止の期間設定をし、それをメモ
リ３２に記憶させておく。なお、ベークカバー１２の内
部のガス分配室への窒素ガスの供給は、熱処理空間を排
気する時期に合わせて行うようにする。In the exhaust passage 20 which connects the exhaust passage 16 arranged around the hot plate 10 and the exhaust suction source, the exhaust passage 16 communicates with the exhaust suction source and the exhaust passage 16 An on-off valve 24 is provided to switch between the exhaust gas suction source and the exhaust gas suction source. The on-off valve 24 is connected to the controller 26, and the controller 26
It is connected to the CPU 28 of the microcomputer.
The CPU 28 also includes a keyboard 30 and a memory 3.
2 is connected. Then, in advance, a period for exhausting the heat treatment space and a period for stopping the exhaust are set according to the contents of the substrate, and heat treatment conditions including the period setting are input by the keyboard 30. The heat treatment conditions that have been set and input are stored in the memory 32 as a programmed recipe.
Memorized in. For example, the evacuation of the heat treatment space may be stopped during most of the heat treatment of the substrate, and the evacuation of the heat treatment space may be started immediately before the heat treatment of the substrate is completed. If the evacuation is stopped and the evacuation of the heat treatment space is started at or immediately after the completion of the heat treatment of the substrate, or the amount of solvent vapor evaporated from the coating liquid applied to the surface of the substrate is large during the heat treatment. When performing the heat treatment on the substrate, the heat treatment space is constantly evacuated, or the evacuation is stopped at the beginning of the heat treatment, and the heat treatment space is evacuated after a certain time has elapsed. The period for exhausting the space and the period for stopping the exhaust are set and stored in the memory 32. The nitrogen gas is supplied to the gas distribution chamber inside the bake cover 12 at the time when the heat treatment space is exhausted.
【００１８】上記したような構成の熱処理装置を使用し
て基板をベーク処理する場合には、ベークカバー１２を
ホットプレート１０から上方に離間した待機位置へ上昇
させた状態において、基板Ｗを装置内へ搬入してホット
プレート１０の上面に載置する。次に、昇降機構により
ベークカバー１２を下降させて、図示しているようにホ
ットプレート１０の上面に載置された基板Ｗの上方をベ
ークカバー１２で覆ってから、基板Ｗの熱処理を開始す
る。熱処理が開始されると、メモリ３２から読み出され
たレシピのプログラム内容に従い、ＣＰＵ２８からの信
号によりコントローラ２６から制御信号が出力されて、
その制御信号により開閉弁２４の開閉動作が制御され、
ホットプレート１０とベークカバー１２との間の熱処理
空間が所望の各時期に排気されまたは排気停止される。
例えば、基板Ｗの熱処理中は、開閉弁２４を閉じて熱処
理空間の排気が行われないようにし、熱処理が完了する
直前あるいは熱処理が完了した時点もしくはその直後に
おいて、ベークカバー１２が上昇してホットプレート１
０から上方へ離間する前後に、コントローラ２６からの
制御信号により開閉弁２４を開いて、ホットプレート１
０の周囲の排気通路１６と排気吸引源とを排気路２０に
より連通させた状態にし、熱処理空間の排気が開始され
るようにする。このように熱処理空間の排気および排気
停止を制御することにより、基板Ｗの熱処理中は、排気
が行われないために、基板Ｗの面内温度の均一性が向上
し、一方、熱処理に伴って基板Ｗの表面の塗布液から蒸
発し熱処理空間に滞留した溶剤蒸気は、基板Ｗの熱処理
が終了した時点で速やかに強制排気されることとなる。When the substrate is baked by using the heat treatment apparatus having the above-mentioned structure, the substrate W is placed inside the apparatus in a state where the bake cover 12 is lifted up from the hot plate 10 to the standby position. And is placed on the upper surface of the hot plate 10. Next, the bake cover 12 is lowered by the elevating mechanism to cover the upper side of the substrate W placed on the upper surface of the hot plate 10 with the bake cover 12 as shown in the figure, and then the heat treatment of the substrate W is started. . When the heat treatment is started, a control signal is output from the controller 26 by a signal from the CPU 28 according to the program content of the recipe read from the memory 32,
The open / close operation of the open / close valve 24 is controlled by the control signal,
The heat treatment space between the hot plate 10 and the bake cover 12 is exhausted or stopped at desired times.
For example, during the heat treatment of the substrate W, the on-off valve 24 is closed so that the heat treatment space is not evacuated, and the bake cover 12 is raised and hot just before the heat treatment is completed or immediately after the heat treatment is completed. Plate 1
The open / close valve 24 is opened by a control signal from the controller 26 before and after the upward separation from 0, and the hot plate 1
The exhaust passage 16 and the exhaust suction source around 0 are connected by the exhaust passage 20 so that exhaust of the heat treatment space is started. By controlling the evacuation and the evacuation of the evacuation of the heat treatment space in this manner, since the evacuation is not performed during the heat treatment of the substrate W, the in-plane temperature uniformity of the substrate W is improved, while the heat treatment is accompanied. The solvent vapor evaporated from the coating liquid on the surface of the substrate W and staying in the heat treatment space is promptly exhausted by force at the time when the heat treatment of the substrate W is completed.
【００１９】なお、基板Ｗの熱処理中に、基板Ｗが載置
されたホットプレート１０の上部空間をベークカバー１
２によって密閉（完全密閉でなくてもよい）し、その密
閉空間に基板Ｗの表面の塗布液から蒸発した溶剤蒸気を
閉じ込めておき、熱処理が終了してベークカバー１２が
上昇する前後に排気を開始して、密閉空間から漏れ出た
溶剤蒸気をチャンバ１４内から強制排気するようにして
もよい。During the heat treatment of the substrate W, the bake cover 1 is provided in the upper space of the hot plate 10 on which the substrate W is placed.
It is hermetically sealed (not necessarily completely hermetically sealed) by 2, and the solvent vapor evaporated from the coating liquid on the surface of the substrate W is trapped in the hermetically sealed space, and exhaust is performed before and after the heat treatment is completed and the bake cover 12 is raised. Alternatively, the solvent vapor leaking from the closed space may be forcibly exhausted from the chamber 14.
【００２０】上記実施形態では、熱処理空間の排気を、
ホットプレート１０の周囲から下方への吸引によって行
うようにしているが、基板の熱処理が完了する前後の時
点で排気を開始するときは、排気はどのような方法によ
ってもよく、例えば、ガス供給路２２を流路切換え手段
により排気吸引源に流路接続できるようにしておき、ベ
ークカバー１２の内部からガス供給路２２の一部を経て
熱処理空間の排気を行うようにしてもよい。また、ベー
クカバー１２へのガス供給系は、特に必要が無ければ設
けなくてもよい。In the above embodiment, the exhaust of the heat treatment space is
Although the suction is performed from the periphery of the hot plate 10 downward, when the exhaust is started before and after the heat treatment of the substrate is completed, the exhaust may be performed by any method, for example, the gas supply path. 22 may be connected to the exhaust suction source by a flow path switching means, and the heat treatment space may be exhausted from the inside of the bake cover 12 through a part of the gas supply path 22. Further, the gas supply system to the bake cover 12 may be omitted if it is not necessary.
【００２１】[0021]
【発明の効果】請求項１に係る発明の基板の熱処理方法
によると、熱処理プレート上に載置された基板の上方を
カバーで覆って基板を熱処理したときに、熱処理中にお
ける基板の面内温度の均一性が熱処理空間の排気によっ
て阻害されることが無くなりもしくは最小限に抑えられ
るので、基板の熱処理品質が向上する。According to the substrate heat treatment method of the first aspect of the present invention, the in-plane temperature of the substrate during the heat treatment when the substrate placed on the heat treatment plate is covered with a cover to heat the substrate. Uniformity is eliminated or minimized by the evacuation of the heat treatment space, thus improving the heat treatment quality of the substrate.
【００２２】請求項２に係る発明の熱処理方法では、熱
処理中における基板の面内温度の均一性が熱処理空間の
排気によって阻害されることが無くなりもしくはほとん
ど無くなるため、基板の熱処理品質が向上する。In the heat treatment method according to the second aspect of the present invention, the uniformity of the in-plane temperature of the substrate during the heat treatment is not obstructed by the evacuation of the heat treatment space or is almost eliminated, so that the heat treatment quality of the substrate is improved.
【００２３】請求項３に係る発明の熱処理方法では、熱
処理中における基板の面内温度の均一性が熱処理空間の
排気によって阻害されることが無くなるため、基板の熱
処理品質が向上する。In the heat treatment method according to the third aspect of the present invention, the uniformity of the in-plane temperature of the substrate during the heat treatment is not disturbed by the exhaust of the heat treatment space, so that the heat treatment quality of the substrate is improved.
【００２４】請求項４に係る発明の基板の熱処理装置を
使用すると、請求項１に係る発明の熱処理方法を好適に
実施することができ、請求項１に係る発明の上記効果が
得られて、基板の熱処理品質を向上させることができ
る。By using the substrate heat treatment apparatus of the invention according to claim 4, the heat treatment method of the invention according to claim 1 can be preferably carried out, and the above-mentioned effect of the invention according to claim 1 can be obtained. The heat treatment quality of the substrate can be improved.
【図１】この発明に係る基板の熱処理方法を実施するの
に使用される熱処理装置の１例を示す概略構成図であ
る。FIG. 1 is a schematic configuration diagram showing an example of a heat treatment apparatus used to carry out a substrate heat treatment method according to the present invention.
１０ ホットプレート １２ ベークカバー １４ チャンバ １６ 排気通路 ２０ 排気路 ２４ 開閉弁 ２６ コントローラ ２８ ＣＰＵ ３０ キーボード ３２ メモリ 10 hot plates 12 Bake cover 14 chambers 16 Exhaust passage 20 exhaust path 24 on-off valve 26 Controller 28 CPU 30 keyboard 32 memory
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平９−92595（ＪＰ，Ａ) 特開 平３−127820（ＪＰ，Ａ) 特開 平６−37006（ＪＰ，Ａ) 特開 平６−260408（ＪＰ，Ａ) 特開 平７−321023（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/027 ─────────────────────────────────────────────────── --- Continuation of the front page (56) References JP-A-9-92595 (JP, A) JP-A-3-127820 (JP, A) JP-A-6-37006 (JP, A) JP-A-6- 260408 (JP, A) JP-A-7-321023 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 21/027
Claims (4)
しくは間隔を設けて載置し、前記熱処理プレートの上方
を覆うようにカバーを配置して熱処理プレートとの間で
熱処理空間を形成し、その熱処理空間の排気を行って、
基板を熱処理する基板の熱処理方法において、 基板の熱処理の内容に応じて、熱処理中の全期間もしく
は一部の期間における前記熱処理空間の排気を停止させ
ることを特徴とする基板の熱処理方法。1. A substrate is placed on the upper surface of a heat treatment plate directly or at intervals, and a cover is arranged so as to cover the heat treatment plate to form a heat treatment space between the heat treatment plate and the heat treatment plate. Evacuate the heat treatment space,
A substrate heat treatment method for heat treating a substrate, characterized in that the evacuation of the heat treatment space is stopped during the whole or a part of the heat treatment according to the content of the heat treatment of the substrate.
処理空間の排気を開始する時機が、基板の熱処理が完了
する直前から完了した直後までの間とされる請求項１記
載の基板の熱処理方法。2. The heat treatment method for a substrate according to claim 1, wherein the time when the heat treatment space is evacuated from the state where the heat treatment space is evacuated is from immediately before to immediately after the heat treatment of the substrate is completed. .
理空間の排気が停止され、基板の熱処理が完了した直後
から前記熱処理空間の排気が行われる請求項１記載の基
板の熱処理方法。3. The method for heat treating a substrate according to claim 1, wherein the evacuation of the heat treatment space is stopped for the entire period of the heat treatment of the substrate, and the heat treatment space is evacuated immediately after the heat treatment of the substrate is completed.
て載置する熱処理プ レートと、この熱処理プレートの上方を覆うように配置
されて熱処理プレートとの間で熱処理空間を形成するカ
バーと、 排気吸引源に流路接続され、前記熱処理空間の排気を行
うための排気路とを備えた基板の熱処理装置において、 前記排気路に、前記排気吸引源に対する連通状態と遮断
状態とを切り換える切換え手段を設け、 基板の熱処理の内容に応じて、前記熱処理空間の排気お
よび排気停止の期間設定を入力するための設定入力手段
と、 この設定入力手段によって入力された熱処理空間の排気
および排気停止の期間設定を記憶する記憶手段と、 この記憶手段に記憶された前記期間設定に基づいて、前
記熱処理空間が所望の各時期に排気されまたは排気停止
されるように前記切換え手段を制御する制御手段とを備
えたことを特徴とする基板の熱処理装置。4. A heat treatment plate on which a substrate is placed directly or at intervals, a cover which is disposed so as to cover the heat treatment plate and forms a heat treatment space between the heat treatment plate, and exhaust. In a heat treatment apparatus for a substrate, which is connected to a suction source in a flow path and has an exhaust passage for exhausting the heat treatment space, a switching means for switching between a communication state and a cutoff state for the exhaust suction source is provided in the exhaust passage. A setting input means for inputting a period setting of the exhaust and the exhaust stop of the heat treatment space according to the content of the heat treatment of the substrate, and an exhaust period setting of the exhaust and the exhaust stop of the heat treatment space inputted by the setting input means Based on the period setting stored in the storage unit, the heat treatment space is evacuated or stopped at each desired time. Heat treatment apparatus of the substrate, characterized in that a control means for controlling said switching means so that.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3265097A JP3484035B2 (en) | 1997-01-31 | 1997-01-31 | Substrate heat treatment method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3265097A JP3484035B2 (en) | 1997-01-31 | 1997-01-31 | Substrate heat treatment method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10223515A JPH10223515A (en) | 1998-08-21 |
| JP3484035B2 true JP3484035B2 (en) | 2004-01-06 |
Family
ID=12364744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3265097A Expired - Fee Related JP3484035B2 (en) | 1997-01-31 | 1997-01-31 | Substrate heat treatment method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3484035B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3884542B2 (en) * | 1997-10-06 | 2007-02-21 | シャープ株式会社 | Resist heat treatment apparatus and resist heat treatment method |
| JP3702175B2 (en) * | 2000-12-19 | 2005-10-05 | 東京エレクトロン株式会社 | Heat treatment apparatus and method, and pattern formation method |
| KR100396699B1 (en) * | 2001-01-10 | 2003-09-03 | 주식회사 하이닉스반도체 | reflow bake system in fabrication of semiconductor device |
| JP6811638B2 (en) | 2017-02-14 | 2021-01-13 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and its equipment |
| JP6987507B2 (en) * | 2017-02-14 | 2022-01-05 | 株式会社Ｓｃｒｅｅｎホールディングス | Board processing method and its equipment |
| JP6987968B2 (en) * | 2018-03-23 | 2022-01-05 | 東京エレクトロン株式会社 | Heat treatment equipment and heat treatment method |
| JP7308671B2 (en) * | 2019-07-03 | 2023-07-14 | 東京エレクトロン株式会社 | SUBSTRATE HEAT TREATMENT APPARATUS, SUBSTRATE HEAT TREATMENT METHOD, AND STORAGE MEDIUM |
-
1997
- 1997-01-31 JP JP3265097A patent/JP3484035B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10223515A (en) | 1998-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI342385B (en) | Reduced pressure drying apparatus | |
| WO2005104194A1 (en) | Substrate processing method and substrate processing apparatus | |
| US20170372926A1 (en) | Substrate treating unit, baking apparatus including the same, and substrate treating method using baking apparatus | |
| JP3484035B2 (en) | Substrate heat treatment method and apparatus | |
| JP2002184682A (en) | Method and device for heat treatment, and pattern formation method | |
| JP3913625B2 (en) | Vacuum drying apparatus, coating film forming apparatus, and vacuum drying method | |
| KR100848209B1 (en) | Single-wafer type heat treatment apparatus for semiconductor processing system | |
| KR100566790B1 (en) | Thin film forming apparatus and thin film forming method | |
| JPH09320799A (en) | Plasma processor and plasma processing method | |
| JP3525022B2 (en) | Substrate heating device | |
| JP4153686B2 (en) | Film forming liquid drying equipment | |
| JP3784305B2 (en) | Vacuum drying apparatus and vacuum drying method | |
| JP3847473B2 (en) | Substrate heat treatment apparatus and substrate heat treatment method | |
| JP3280798B2 (en) | Heat treatment method and heat treatment apparatus for coating film | |
| JP3609266B2 (en) | Substrate processing equipment | |
| JP2002270493A (en) | Heat treating apparatus and exhausting method thereof | |
| JP2000091224A (en) | Method and device for heat treatment | |
| JPH11317339A (en) | Method and device for processing substrate | |
| JP4066255B2 (en) | Substrate processing apparatus and substrate processing method | |
| JP3540111B2 (en) | Substrate heat treatment equipment | |
| JP2001237155A (en) | Heat treatment method and heat treatment device | |
| KR20180093789A (en) | Substrate treating method | |
| JP3594820B2 (en) | Substrate heat treatment equipment | |
| JPH10335238A (en) | Substrate heat-treating apparatus | |
| JP2000100807A (en) | Substrate thermal treatment equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071017 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081017 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091017 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091017 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091017 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101017 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101017 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111017 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111017 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111017 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121017 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121017 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131017 Year of fee payment: 10 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |