JP4153686B2 - Film forming liquid drying equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a technique for drying a film forming solution such as a resist solution applied on a substrate such as a semiconductor wafer.
[0002]
[Prior art]
As one of film formation techniques in a semiconductor manufacturing apparatus, there is a technique based on a scan coating method as disclosed in Japanese Patent Application Laid-Open No. 2000-077326.
[0003]
The scan coating method is applied, for example, when a resist solution is applied to a substrate such as a semiconductor wafer. The resist solution is ejected linearly from the nozzle by moving the nozzle relative to the substrate. Is to be applied to the substrate.
[0004]
[Problems to be solved by the invention]
By the way, according to such a scan coating method, the resist solution applied on the substrate remains liquid. The wafer coated with the resist solution is usually transferred to the next baking step. However, if the resist solution remains in a liquid state, the resist solution may flow during transportation, or the resist solution may become organic during the baking process. Problems such as a large amount of solvent occur.
[0005]
For this reason, it is necessary to evaporate excess solvent and dry the resist solution after performing scan coating and before baking processing. (By the way, if the resist solution is applied by spin coating, the substrate is rotated. To dry the resist solution.)
[0006]
However, if the resist solution is dried in a room temperature atmosphere, the time required for the drying process becomes long.
[0007]
On the other hand, when the resist solution is dried in a predetermined high-temperature atmosphere, the time required for the drying process is shortened, but the resist solution is convected by heat on the substrate surface, resulting in a non-uniform film thickness after drying.
[0008]
Therefore, an object of the present invention is to dry a film forming liquid that can be dried in as short a time as possible so that the film thickness after drying is as uniform as possible. Equipment It is to provide.
[0014]
[Means for Solving the Problems]
In order to solve the above problems, the invention according to claim 1 A film forming liquid drying apparatus for drying a film forming liquid applied to a substrate, comprising: a low temperature side drying apparatus having a substrate holding means for holding the substrate under a predetermined drying temperature environment; and the predetermined drying temperature. A high temperature side drying device having a substrate holding means for holding the substrate in a high drying temperature environment, a substrate transfer means for transferring the substrate held on the low temperature side drying device side to the high temperature side drying device, and a substrate, Transport control means for causing the substrate transport means to perform an operation of transporting the substrate to the high temperature side drying apparatus during the drying process after being held on the low temperature side drying apparatus side, and the low temperature side drying The apparatus further includes an atmospheric pressure detection unit that can detect the atmospheric pressure around the substrate, which varies according to the degree of drying of the film forming solution, and the transfer control unit is configured to detect the substrate based on the atmospheric pressure detection signal from the atmospheric pressure detection unit. The high temperature side And it controls the timing for conveying to 燥 device.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0021]
In each of the following embodiments, the film forming liquid drying apparatus and the film forming liquid drying method were applied to an apparatus for drying a resist liquid applied to a substrate such as a semiconductor wafer and a method for drying the resist liquid. An example will be described.
[0022]
{First embodiment}
<Overall configuration of film forming liquid drying apparatus>
FIG. 1 is a schematic cross-sectional view showing the entire film forming liquid drying apparatus 5.
[0023]
The film-forming liquid drying apparatus 5 generally includes a container 10 that houses and holds the substrate 1, a heater 30 that can adjust a drying temperature for the substrate 1, and a control unit 35 that performs temperature adjustment control by the heater 30. The resist solution applied to the substrate 1 and remaining in a liquid state is dried.
[0024]
The container 10 is configured to be able to accommodate the substrate 1 in an airtight state. Specifically, the container 10 includes a main body 11 in which the substrate 1 is accommodated and disposed, and a lid 20 that covers the main body 11.
[0025]
FIG. 2 is a plan view of the main body 11, and FIG. 3 is a cross-sectional view of the container 10 with the lid 20 opened. As shown in FIGS. 1-3, the main-body part 11 is formed in the substantially disc shape, and the predetermined | prescribed accommodation space 13 surrounded by the surrounding wall part 12 is formed in the upper surface side center part. . The accommodation space 13 is formed in a shape and size that can accommodate the substrate 1 in a horizontal posture. Here, the substrate 1 is formed in a substantially circular shape in plan view, and the accommodation space 13 is formed in a circular hole shape that is slightly larger than the substrate 1.
[0026]
A plurality of protrusions 15 capable of supporting the substrate 1 are formed on the bottom surface 14 in the accommodating space 13 of the main body 11 and positioning the substrate 1 in the horizontal direction by contacting the peripheral side surface of the substrate 1. A plurality of guides 16 are formed. In FIG. 2, three projections 15 are formed at predetermined intervals along the outer peripheral direction of the substrate 1 to be accommodated and arranged in the accommodation space 13, and are positioned at outer positions corresponding to the respective projections 15. A guide 16 is formed.
[0027]
When the substrate 1 is accommodated in the accommodating space 13, the substrate 1 is supported by the projections 15 and is held at a predetermined position separated from the bottom surface 14.
[0028]
In the present embodiment, the protrusion 15 and the positioning guide 16 serve as a substrate holding unit that holds the substrate 1.
[0029]
Further, a push-up pin 17 is provided on the main body 11 so as to be able to move out of the bottom surface 14 (see FIG. 3). In FIG. 2, three push-up pins 17 are provided at positions where the positioning guides 16 can contact the peripheral edge of the substrate 1. The push-up pin 17 is driven out and back from the bottom surface 14 by a drive unit (not shown), and when it is advanced upward, the substrate 1 is lifted upward (see the substrate 1 indicated by a two-dot chain line in FIG. 3), and the illustration is omitted. In the state where the substrate 1 is transferred to and from the substrate transfer robot, and the substrate 1 is retracted downward, the substrate 1 is moved downward in the accommodation space 13 to be supported by the protrusion 15. ing.
[0030]
Further, an annular slit 18 is formed along an annular portion of the main body portion 11 where the inner surface of the peripheral wall portion 12 and the bottom surface 14 intersect, and an air suction hole 19 penetrating from the annular slit 18 to the outer surface of the main body portion 11 is formed. Is formed.
[0031]
A vacuum pump 40 as a suction means is connected to the outer opening of the air suction hole 19 via a pressure adjusting valve 41. When the vacuum pump 40 performs a suction operation, the gas in the container 10 is sucked. At this time, in the main body 11, gas is sucked through the annular slit 18, so that an equal suction force can be applied around the substrate 1 as much as possible.
[0032]
The lid 20 covers the main body 11 in an airtight state and is attached to the main body 11 so as to be freely opened and closed.
[0033]
That is, the upper portion of the peripheral wall portion 12 has a shape in which the outer peripheral portion is stepped down from the inner peripheral portion, and the lower peripheral portion of the lower surface of the lid 20 has a shape protruding one step correspondingly. is doing. When the lid 20 is attached to the main body 11 so that the outer peripheral portion of the lower surface of the lid 20 is fitted into the upper portion of the peripheral wall portion 12, the accommodation space 13 is maintained in an airtight state. An O-ring 28 is provided on the peripheral wall portion 12 side by an elastic member such as rubber so as to keep the airtight state more reliably.
[0034]
Furthermore, a gas supply hole 22 is formed in the lid 20 so as to penetrate the top and bottom (inside and outside of the container 10 as a reference). An inert gas supply source 42 as a gas supply means is connected to the gas supply hole 22 via a leak amount adjusting valve 43. When the air in the container 10 is sucked by the vacuum pump 40 with the lid 20 closed to the main body 11, a negative pressure is generated in the storage space 13, and the negative pressure causes the inside of the inert gas supply source 42. An inert gas (nitrogen gas or the like) is introduced into the accommodation space 13 through the gas supply hole 22. Here, the inert gas is introduced because the humidity, temperature, etc. can be easily managed.
[0035]
The opening / closing operation of the lid 20 is performed by driving a driving unit (not shown).
[0036]
The container 10 is provided with a barometer 44 for monitoring the atmospheric pressure in the accommodation space 13.
[0037]
The heater 30 has a function of adjusting the drying temperature for the substrate 1 accommodated in the container 10. In the present embodiment, the heater 30 is provided on the lower surface side of the main body portion 11 and the upper surface side of the lid body 20, and the heat generated by the heater 30 passes through the main body portion 11 and the inside of the lid body 20. It is transmitted to the gas in the storage space 13. Thereby, the gas temperature around the substrate 1 rises higher than the ambient temperature of the apparatus, and the drying temperature of the substrate 1 can be raised.
[0038]
In addition, the aspect in which the heater 30 is provided is not limited to that described above, and may be provided in the accommodation space 13, for example.
[0039]
The control unit 35 controls the entire apparatus, and includes a CPU, a ROM, a RAM, and the like, and is configured by a general microcomputer that performs a predetermined arithmetic operation using a software program stored in advance.
[0040]
The control unit 35 controls a series of operations described later. At least during the drying process described later, the heater 30 is turned on to control the operation to raise the drying temperature.
[0041]
In the present embodiment, the control unit 35 includes a timer circuit 36, and the timer circuit 36 measures the elapsed time after the drying process is started. Then, after a predetermined time has elapsed since the start of the drying process, the heater 30 is turned on to raise the drying temperature.
[0042]
<Operation of film forming liquid drying device>
Next, the operation of the film forming liquid drying apparatus 5 will be described with reference to FIG.
[0043]
First, after a resist solution is applied to the substrate 1 by a coating device (not shown) such as a scanning coating device, the substrate 1 is transported into the container 10 by a substrate transporting robot (not shown) as shown in step S1. Is done. The substrate 1 is supported on each protrusion 15 in the main body 11.
[0044]
Thereafter, as shown in step S2, the lid 20 is closed and the container 10 is hermetically sealed. Subsequently, as shown in step S3, the gas in the container 10 is sucked by the vacuum pump 40, and the container 10 is not sealed. An inert gas from the active gas supply source 42 is introduced into the container 10. At this time, the opening degree of the pressure adjusting valve 41 and the leak amount adjusting valve 43 is adjusted so that the inside of the accommodating space 13 is in a predetermined reduced pressure state that is reduced from the atmospheric pressure. At this time, the resist solution applied to the substrate 1 is dried at a relatively low temperature and a reduced pressure.
[0045]
When a preset pre-drying time has elapsed after starting the drying process, the heater 30 is turned on to increase the drying temperature, as shown in step S4.
[0046]
Here, the time of starting the drying process is based on the time of a predetermined processing operation performed along with the start of the drying process. For example, the time when the substrate 1 is transported into the container 10, the time when the container 10 is sealed, or the time when the vacuum pump is operated can be used as a reference.
[0047]
In addition, the pre-drying time is such that the resist solution is dried to some extent, and even after drying in a relatively high temperature atmosphere, the film thickness after drying is non-uniform due to the thermal convection of the resist solution on the surface of the substrate 1. It is time to be no longer.
[0048]
That is, when the drying of the resist solution on the surface of the substrate 1 proceeds to some extent, most of the solvent in the resist solution evaporates and the viscosity increases remarkably. Here, in general, the degree of convection depends on the viscosity of the liquid (Marangoni number, etc.), and convection hardly occurs when the viscosity increases. Accordingly, when the drying of the resist solution has progressed to some extent, even if the drying is performed in a relatively high temperature atmosphere, thermal convection of the resist solution on the surface of the substrate 1 hardly occurs and the film thickness after drying can be kept uniform. . Such pre-drying time is determined experimentally and empirically according to the drying conditions such as the type of the substrate 1 and the resist solution and the pressure in the container 10.
[0049]
The increased drying temperature in step S4 is set to be lower than the flash temperature of the resist solution.
[0050]
In step S4, after increasing the drying temperature, as shown in step S5, when the preset complete drying time has elapsed, the suction by the vacuum pump 40 is stopped to return the atmospheric pressure to the atmospheric pressure, and the heater 30 Is turned off to finish the drying process of the resist solution.
[0051]
This complete drying time is the time necessary for the drying to proceed to such an extent that when the substrate 1 is baked, the problem due to the generation of the organic solvent of the resist solution does not occur. Complete drying time is also required experimentally and empirically.
[0052]
Finally, in step S6, when the lid 20 is opened and the substrate 1 in the container 10 is taken out by a substrate transport robot (not shown), the drying process for the substrate 1 is completed.
[0053]
The substrate 1 thus dried is conveyed to the next baking apparatus (not shown).
[0054]
According to the film forming liquid drying apparatus 5 and the film forming liquid drying method configured as described above, since the drying is performed at a relatively low temperature until the middle of the film forming liquid drying process, the heat of the resist liquid in the drying process is obtained. Convection is prevented and the film thickness after drying can be made as uniform as possible. Also, during the drying process, the drying progresses to some extent and the viscosity rises and heat convection hardly occurs, and since drying is performed at a relatively high temperature, the subsequent drying can be performed in a short time, and the overall drying time Can be made as short as possible.
[0055]
In addition, by sucking the gas in the container 10, the drying is performed under a condition where the pressure is lower than the atmospheric pressure, so that the drying can be performed in a shorter time.
[0056]
Furthermore, since the gas from the outside is introduced into the container 10 while the gas in the container 10 is sucked, the gas that has approached the saturation state due to the evaporation of the solvent of the resist solution in the container 10 from the outside. In this respect, drying can be performed in a shorter time.
[0057]
<Modification of the first embodiment>
In the first embodiment, the drying temperature is increased after the pre-drying time has elapsed after the start of the drying process. However, as in the film forming solution drying apparatus 5B of the modification shown in FIG. The drying temperature may be controlled in accordance with the fluctuations.
[0058]
That is, the film-forming liquid drying apparatus 5B includes an atmospheric pressure detection unit 44B that can detect the atmospheric pressure in the storage space 13 of the container 10, and a detection signal from the atmospheric pressure detection unit 44B is output to the control unit 35B. . The atmospheric pressure detection unit 44 </ b> B detects the atmospheric pressure around the substrate 1 by detecting the atmospheric pressure in the accommodation space 13.
[0059]
A control unit 35B corresponding to the control unit 35 in the first embodiment controls the drying temperature based on the detection signal. Specifically, the control unit 35B turns on the heater 30 when the atmospheric pressure falls below a preset threshold value or when the rate of decrease in the atmospheric pressure exceeds a preset speed. Increase the drying temperature.
[0060]
This principle will be described with reference to FIG. A broken line in FIG. 6 indicates a change in atmospheric pressure when suction is performed in the accommodation space 13 in a state where the substrate 1 is not accommodated in the container 10, and a solid line in FIG. 6 indicates that the substrate 1 is accommodated in the container 10. A change in the atmospheric pressure when suction is performed in the accommodation space 13 in the accommodated state is shown. Various conditions relating to the suction and introduction of gas, such as the suction force by the vacuum pump 40 and the opening degree of the valves 41 and 43, that is, the decompression generation conditions are set to a constant condition.
[0061]
As shown in the figure, when suction is performed in a state where the substrate 1 is not accommodated in the container 10, the atmospheric pressure gradually decreases, and eventually the amount of inert gas introduced and the amount of suction are balanced, resulting in a predetermined pressure reduction. Maintained below.
[0062]
On the other hand, if the suction is performed in a state where the substrate 1 is accommodated in the container 10, although the atmospheric pressure suddenly decreases at the beginning of the suction (˜t 1), if the pressure is reduced to the predetermined pressure at the time t 1, The amount of evaporation of the solvent in the applied resist solution is drastically increased, and the pressure reduction is moderated (t1 to t2). When the drying of the resist solution progresses to some extent at time t2 and the evaporation amount of the solvent decreases, the atmospheric pressure decreases in accordance with the suction (t2 to t3), and eventually the introduction amount and the suction amount of the inert gas at time t3. Are balanced and maintained under a predetermined reduced pressure (t3-).
[0063]
That is, when the substrate 1 is baked at time t2 to t3, it can be considered that the drying has progressed to such an extent that a problem due to the generation of the organic solvent of the resist solution does not occur.
[0064]
Here, at time t2 to t3, the atmospheric pressure falls below a predetermined threshold value P1, or the atmospheric pressure suddenly decreases, so that the decreasing rate of the atmospheric pressure becomes larger than the predetermined speed.
[0065]
Therefore, in the film forming solution drying apparatus 5B according to this modification, the control unit 35B determines whether or not the atmospheric pressure falls below a predetermined threshold value P1 based on the detection signal from the atmospheric pressure detection unit 44B, or It is determined whether or not the decreasing speed exceeds a preset speed, and when the atmospheric pressure falls below a predetermined threshold value P1, or when the decreasing speed of the atmospheric pressure exceeds a preset speed, the heater 30 is turned on to increase the drying temperature.
[0066]
Even in this case, the same effect as in the case of the first embodiment can be obtained.
[0067]
In addition, since the drying temperature is increased in accordance with the atmospheric pressure fluctuation in the container 10, appropriate drying is performed in response to fluctuations in the coating conditions of the resist solution and the drying conditions such as the atmospheric temperature of the container 10. Can process.
[0068]
In the first embodiment and the modifications thereof, the drying temperature is increased only once during the drying process. However, as the drying process proceeds (for example, as the time elapses or the atmospheric pressure is increased). The drying temperature may be increased gradually or stepwise in multiple steps.
[0069]
Further, immediately after the start of the drying process, the drying temperature may be raised from room temperature as long as the resist solution applied to the substrate 1 does not easily cause thermal convection.
[0070]
{Second Embodiment}
Next, a film forming liquid drying apparatus according to a second embodiment of the present invention will be described.
[0071]
FIG. 7 is a schematic view showing the entire film forming liquid drying apparatus.
[0072]
As shown in the figure, this film-forming liquid drying apparatus includes a low-temperature side drying apparatus 100, a high-temperature side drying apparatus 200, and a substrate transfer that transfers the substrate 1 from the low-temperature side drying apparatus 100 toward the high-temperature side drying apparatus 200. Means 300.
[0073]
The low temperature side drying apparatus 100 has a configuration substantially similar to that of the film forming liquid drying apparatus 5 in the first embodiment.
[0074]
Constituent elements that are the same as the constituent elements of the film-forming liquid drying apparatus 5 are given the same reference numerals and explanation thereof is omitted, and only the differences are described. In the low-temperature-side drying apparatus 100, the film-forming liquid drying apparatus 5, the heater 30 and the control unit 35 for controlling the heater 30 are omitted.
[0075]
In the low temperature side drying apparatus 100, the substrate 1 is accommodated and held under a predetermined drying temperature environment (here, normal temperature).
[0076]
Further, the high temperature side drying apparatus 200 has substantially the same configuration as the film formation liquid drying apparatus 5 in the first embodiment.
[0077]
Constituent elements that are the same as the constituent elements of the film-forming liquid drying apparatus 5 are given the same reference numerals, explanations thereof are omitted, and only differences are explained. The high temperature side drying apparatus 200 has a configuration in which a mechanism related to introduction of suction / inert gas from the film forming liquid drying apparatus 5 is omitted. Specifically, in place of the container 10 in the film forming liquid drying apparatus 5, the main body 211 having a configuration in which the annular slit 18 and the air suction hole 19 formed in the main body 11 described above are omitted, and the lid 20 described above. A container 210 is used that includes a lid body 220 having a configuration in which the gas supply hole 22 formed in FIG. Further, the vacuum pump 40, the pressure adjustment valve 41, the inert gas supply source 42, and the leak amount adjustment valve 43 are omitted. Here, the drying process under reduced pressure is effective only in the initial drying state that is extremely susceptible to the influence of the outside world. Therefore, on the high temperature side drying apparatus 200 side, there is no problem even if the mechanism relating to the introduction of suction / inert gas is omitted. Absent. Furthermore, the control part 35 which controls the heater 30 is also omitted.
[0078]
In the high temperature side drying apparatus 200, the heater 30 is always on, and the substrate 1 is accommodated and held in a drying temperature environment higher than the predetermined drying temperature.
[0079]
The substrate transfer means 300 is configured by a well-known substrate transfer robot, and holds the substrate 1 accommodated and held in the low temperature side drying apparatus 100 with the lid 20 opened on the low temperature side drying apparatus 100 side. And this is conveyed to the high temperature side drying apparatus 200 side, and the board | substrate 1 is accommodated and arrange | positioned in the high temperature side drying apparatus 200 in the state which the cover body 220 opened in the high temperature side drying apparatus 200 side.
[0080]
The operation control of the substrate transfer means 300 is performed by a control unit 350 having a built-in timer circuit 351.
[0081]
The control unit 350 is configured by a general microcomputer similarly to the control unit 35 described above, and moves the substrate 1 from the low temperature side drying apparatus 100 side to the high temperature side drying apparatus 200 side at least during the drying process. The operation of the substrate transfer means 300 is controlled so as to be transferred.
[0082]
In the present embodiment, the control unit 350 measures the elapsed time after the drying process is started by the timer circuit 36, and after the predetermined time has elapsed from the start of the drying process, the control unit 350 moves the substrate 1 to the low temperature side drying apparatus 100 side. To the high temperature side drying apparatus 200 side.
[0083]
<Operation of film forming liquid drying device>
The operation of this film forming liquid drying apparatus will be described.
[0084]
First, the substrate 1 coated with a resist solution is conveyed into the low temperature side drying apparatus 100. In the low temperature side drying apparatus 100, drying is performed at a relatively low temperature. That is, in the flowchart shown in FIG. 4 described in the first embodiment, the processing from step S1 to step S3 is performed in the low temperature side drying apparatus 100.
[0085]
When a preset pre-drying time has elapsed after starting the drying process, the substrate transport means 300 transports the substrate 1 from the low temperature side drying device 100 side to the high temperature side drying device 200 side. That is, in the flowchart shown in FIG. 4, an operation of transferring the substrate 1 to the high temperature side drying apparatus 200 is performed instead of step S <b> 4 in which the heater 30 is turned on to increase the temperature.
[0086]
The pre-drying time and the processing start reference time are set in the same manner as described in the first embodiment.
[0087]
On the high temperature side drying apparatus 200 side, the heater 30 is always turned on and is set to a relatively high drying temperature. And if the board | substrate 1 is conveyed in the high temperature side drying apparatus 200, drying of the board | substrate 1 will be performed under comparatively high drying temperature, and after the board | substrate 1 conveyance, when the preset complete drying time passes, The substrate 1 is taken out from the high temperature side drying apparatus 200 side, and the drying process of the resist solution is completed. That is, in the flowchart shown in FIG. 4, the processes in steps S5 and S6 are performed in the high temperature side drying apparatus 200.
[0088]
Here, the drying temperature and the complete drying time are set in the same manner as described in the first embodiment.
[0089]
Also with the film forming liquid drying apparatus according to the second embodiment configured as described above, drying is performed at a relatively low temperature until the middle of the film forming liquid drying process, and thereafter at a relatively high temperature. Since the drying is performed, the film-forming solution applied on the substrate can be dried in as short a time as possible so that the film thickness after drying becomes as uniform as possible.
[0090]
Further, on the low temperature side drying apparatus 100 side, the gas in the container 10 is sucked to perform the drying under a condition where the pressure is lower than the atmospheric pressure. Therefore, the drying can be performed in a shorter time.
[0091]
Further, on the low temperature side drying apparatus 100 side, while the gas in the container 10 is sucked, the gas from the outside is introduced into the container 10, so that the solvent of the resist solution evaporates and becomes saturated in the container 10. Since the gas approaching the state can be replaced with the gas from the outside, drying can be performed in a shorter time from this point.
[0092]
In particular, in the first embodiment, when the drying process of the substrate 1 is repeatedly performed, it is necessary to wait for the heater 30 and the like to be cooled. In the second embodiment, however, the temperature is relatively low. Since the low temperature side drying apparatus 100 that performs drying at a high temperature and the high temperature side drying apparatus 200 that performs drying at a relatively high temperature are separated, such a cooling time is unnecessary, and a rapid drying process is performed on a plurality of substrates 1. Can be done.
[0093]
<Modification of Second Embodiment>
Note that, in the film-forming liquid drying apparatus according to the second embodiment, as in the film-forming liquid drying apparatus according to the modification shown in FIG. The timing at which the substrate 1 is transported from the low temperature side drying apparatus 100 side to the high temperature side drying apparatus 200 side may be controlled in accordance with fluctuations in the ambient atmospheric pressure.
[0094]
That is, in this film forming liquid drying apparatus, an atmospheric pressure detection unit 144B capable of detecting the atmospheric pressure in the internal storage space 13 is provided on the low temperature side drying apparatus 100 side, and a detection signal from the atmospheric pressure detection unit 144B is transmitted to the control unit. It is output to 350B. The atmospheric pressure detection unit 144 </ b> B detects the atmospheric pressure around the substrate 1 by detecting the atmospheric pressure in the accommodation space 13.
[0095]
The controller 350B controls the transfer timing by the substrate transfer means 300 based on the detection signal. Specifically, the control unit 350B operates the substrate transport unit 300 when the atmospheric pressure falls below a preset threshold value or when the rate of decrease in the atmospheric pressure exceeds a preset speed. Then, the substrate 1 is transported to the high temperature side drying apparatus 200.
[0096]
Even in this case, the same effect as in the second embodiment can be obtained.
[0097]
In addition, since the drying temperature is increased in accordance with the atmospheric pressure fluctuation in the container 10, appropriate drying is performed in response to fluctuations in the coating conditions of the resist solution and the drying conditions such as the atmospheric temperature of the container 10. Can process.
[0098]
In addition, a plurality of containers 10 and 210 are provided on at least one side of the low temperature side drying apparatus 100 and the high temperature side drying apparatus 200, and the substrate 1 is changed from the low temperature side to the high temperature side with different drying temperatures. The transfer may be performed sequentially, and the temperature for drying the substrate 1 may be gradually increased.
[0099]
{Other variations}
While the embodiments of the present invention have been described above, the present invention is not limited to the above examples.
[0100]
For example, although the semiconductor wafer is illustrated as the substrate 1, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, an optical disk substrate, or the like may be used.
[0101]
In addition to the resist solution, the film forming solution applied to the substrate 1 may be an interlayer insulating material, a low dielectric material, a ferroelectric material, an amount of wiring material, an organic metal material, a metal paste, or the like.
[0102]
Further, the present invention is not limited to the one in which the film forming solution is applied to the substrate 1 by the scan coating method, and can be applied to the case where the film forming solution is applied to the substrate 1 and remains in a liquid state.
[0107]
【The invention's effect】
According to the film-forming-liquid drying apparatus of Claim 1 comprised as mentioned above, Until the middle of the film-forming liquid drying process, drying is performed at a relatively low temperature in the low-temperature side drying device, so that thermal convection of the film-forming liquid in the drying process is prevented and the film thickness after drying is made as uniform as possible. Can be. Also, during the film-forming liquid drying process, when the drying progresses to some extent and heat convection is less likely to occur, drying is performed at a relatively high temperature in the high-temperature side drying device, so that drying is performed in as short a time as possible. Can do.
[0108]
In particular, the base Since the timing of transporting the substrate to the high-temperature side drying device is controlled according to fluctuations in the atmospheric pressure around the plate, appropriate drying processing can be performed in response to fluctuations in the coating solution application conditions and drying conditions. .
[Brief description of the drawings]
FIG. 1 is a schematic sectional view showing an overall configuration of a film forming liquid drying apparatus according to a first embodiment of the present invention.
FIG. 2 is a plan view showing a main body portion of a container of the above-described film forming liquid drying apparatus.
FIG. 3 is a cross-sectional view showing an open state of the container of the above-described film forming liquid drying apparatus.
FIG. 4 is a flowchart showing the operation of the above-described film forming liquid drying apparatus.
FIG. 5 is a schematic cross-sectional view showing a modification of the film forming liquid drying apparatus according to the first embodiment.
FIG. 6 is a diagram showing changes in time and atmospheric pressure after the start of suction.
FIG. 7 is a schematic cross-sectional view showing an overall configuration of a film forming liquid drying apparatus according to a second embodiment of the present invention.
FIG. 8 is a schematic cross-sectional view showing a modification of the film forming liquid drying apparatus according to the second embodiment of the invention.
[Explanation of symbols]
1 Substrate
5,5B Film forming liquid drying equipment
10 containers
11 Body
13 accommodation space
19 Air suction hole
20 Lid
22 Gas supply hole
30 Heating heater
35, 35B control unit
36 Timer circuit
40 Vacuum pump
42 Inert gas source
44B Barometric pressure detector
100 Low temperature drying equipment
144B Barometric pressure detector
200 High temperature side dryer
210 containers
211 Body
220 Lid
300 Substrate transfer means
350 Controller
350B control unit
351 Timer circuit

Claims (1)

  A film forming liquid drying apparatus for drying a film forming liquid applied to a substrate,
  A low temperature side drying apparatus having substrate holding means for holding the substrate under a predetermined drying temperature environment;
  A high-temperature side drying device having substrate holding means for holding the substrate under a drying temperature environment higher than the predetermined drying temperature;
  Substrate transport means for transporting the substrate held on the low temperature side drying device side to the high temperature side drying device;
  In the middle of the drying process after the substrate is held on the low-temperature side drying apparatus side, the substrate transporting means is provided with a conveyance control means for performing an operation of conveying the substrate to the high-temperature side drying apparatus,
  The low temperature side drying apparatus further includes an atmospheric pressure detection means that can detect the atmospheric pressure around the substrate, which varies depending on the degree of drying of the film forming solution,
  The transfer control means controls the timing for transferring the substrate to the high temperature side drying apparatus based on the atmospheric pressure detection signal from the atmospheric pressure detection means.

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