KR20200097648A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

Provided are a substrate processing apparatus effective for stability of the quality of a resist pattern using a metal-containing resist, and a substrate processing method. The substrate processing apparatus includes: a heat treatment unit for heat treating a substrate on which a film of a metal-containing resist is formed, and subjected to exposure treatment to the film; and a developing unit for developing a heat-treated film. The heat treatment unit includes: a hot plate supporting and heating a substrate; a chamber covering a processing space on the hot plate; a gas discharge unit in the chamber for discharging a moisture-containing gas from upper side toward a substrate on the hot plate; an exhaust unit for exhausting the inside of the chamber from the outer periphery; and a heater provided in the chamber for heating the chamber.

Description

Substrate processing apparatus and substrate processing method {SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD}

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

In order to realize the miniaturization of a resist pattern, it has been proposed to use a metal-containing resist, which is a metal-containing resist (see, for example, Patent Document 1).

Japanese Patent Publication No. 2016-530565

The present disclosure provides a substrate processing apparatus and a substrate processing method effective for stability of the quality of a resist pattern using a metal-containing resist.

A substrate processing apparatus according to an aspect of the present disclosure includes a heat treatment unit for thermally treating a substrate on which a film of a metal-containing resist is formed, and an exposure treatment is applied to the film, and a development treatment for developing the heat-treated film. Equipped with units. The heat treatment unit includes a hot plate supporting and heating a substrate, a chamber covering a processing space on the hot plate, a gas discharge portion in the chamber that discharges a gas containing moisture from an upper side toward a substrate on the hot plate, and a processing space. It has an exhaust part for exhausting the inside of the chamber from the outer periphery, and a heater provided in the chamber to heat the chamber.

According to the present disclosure, a substrate processing apparatus and a substrate processing method effective for the stability of the quality of a resist pattern using a metal-containing resist are provided.

1 is a diagram illustrating a schematic configuration of a substrate processing system according to a first embodiment.
2 is a schematic diagram illustrating an internal configuration of the substrate processing apparatus according to the first embodiment.
3 is a flowchart showing an example of a substrate processing method.
4 is a schematic diagram illustrating a configuration of a heat treatment unit.
5 is a schematic diagram illustrating a cross-sectional configuration along a line VV shown in FIG. 4.
6 is a functional block diagram illustrating a functional configuration of a control device.
7 is a block diagram illustrating a hardware configuration of a control device.
8A is a flow chart showing an example of a temperature adjustment procedure of a hot plate. 8B is a flowchart showing an example of a procedure for adjusting the temperature of the chamber.
9 is a flowchart showing an example of a heat treatment procedure.
10 is a flowchart showing an example of a heat treatment procedure in the substrate processing system according to the second embodiment.
11 is a schematic diagram illustrating a configuration of a thermal processing unit of a substrate processing system according to a third embodiment.
12 is a flowchart showing an example of a heat treatment procedure.
13 is a schematic diagram illustrating a configuration of a thermal processing unit of a substrate processing system according to a fourth embodiment.
14 is a flowchart showing an example of a heat treatment procedure.

Hereinafter, various exemplary embodiments will be described. In the description, the same elements or elements having the same function are assigned the same reference numerals, and redundant descriptions are omitted.

[First embodiment]

First, a substrate processing system according to a first embodiment will be described with reference to FIGS. 1 to 9.

[Substrate processing system]

The substrate processing system 1 is a system for forming a photosensitive film, exposing the photosensitive film, and developing the photosensitive film on a substrate. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive film is, for example, a resist film. The substrate processing system 1 includes a coating/developing device 2 and an exposure device 3. The exposure apparatus 3 is an apparatus that exposes a resist film (photosensitive film) formed on the wafer W (substrate). Specifically, the exposure apparatus 3 irradiates an energy ray to the exposed portion of the resist film by a method such as liquid immersion exposure. The coating/development device 2 performs a treatment of forming a resist film by applying a resist (chemical) to the surface of the wafer W (substrate) before exposure treatment by the exposure device 3, and then forming a resist film after exposure treatment. Development treatment is performed. The substrate processing system 1 forms a film of a metal-containing resist using a resist containing a metal (hereinafter referred to as a "metal-containing resist"). For example, the substrate processing system 1 may form the film using a resist containing tin (Sn).

[Substrate processing device]

Hereinafter, as an example of the substrate processing apparatus, the configuration of the coating/developing apparatus 2 will be described. As shown in FIGS. 1 and 2, the coating/developing device 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 100.

The carrier block 4 introduces the wafer W into the coating/development apparatus 2 and leads out the wafer W from the coating/development apparatus 2. For example, the carrier block 4 can support a plurality of carriers C for wafers W, and incorporates a transfer device A1 including a transfer arm. The carrier C accommodates a plurality of circular wafers W, for example. The transfer device A1 takes out the wafer W from the carrier C, transfers it to the processing block 5, receives the wafer W from the processing block 5, and returns it into the carrier C. The processing block 5 has a plurality of processing modules 11, 12, 13, 14.

The processing module 11 includes a coating unit U1, a heat processing unit U2, and a transfer device A3 that transports the wafer W to these units. The processing module 11 forms a lower layer film on the surface of the wafer W by the coating unit U1 and the heat processing unit U2. The coating unit U1 applies a processing liquid for forming an underlayer film onto the wafer W. The heat treatment unit U2 performs various heat treatments accompanying the formation of the lower layer film.

The processing module 12 performs a film forming process to form a film of a metal-containing resist. The processing module 12 includes a coating unit U3, a heat processing unit U4, and a transfer device A3 that transports the wafer W to these units. The processing module 12 forms a film of a metal-containing resist on the lower layer film by the application unit U3 and the heat treatment unit U4. The coating unit U3 is a processing liquid for forming a film, and applies a metal-containing resist onto the lower layer film. The heat treatment unit U4 performs various heat treatments accompanying the formation of a film. As a result, a film of a metal-containing resist is formed on the surface of the wafer W.

The processing module 13 includes a coating unit U5, a heat processing unit U6, and a transfer device A3 that transports the wafer W to these units. The processing module 13 forms an upper layer film on the resist film by the application unit U5 and the heat treatment unit U6. The coating unit U5 applies a liquid for forming an upper layer film onto the resist film. The heat treatment unit U6 performs various heat treatments accompanying the formation of the upper layer film.

The processing module 14 includes a developing unit U7 (development processing unit), a heat processing unit U8, and a transfer device A3 that transports the wafers W to these units. The processing module 14 performs development processing of a film subjected to exposure processing and a heat treatment accompanying the development processing by the developing unit U7 and the thermal processing unit U8. As a result, a resist pattern using a metal-containing resist is formed on the surface of the wafer W. Specifically, the heat treatment unit U8 performs heat treatment (PEB: Post Exposure Bake) before development treatment. The developing unit U7 develops the wafer W subjected to the heat treatment (PEB) by the heat treatment unit U8. For example, the developing unit U7 applies a developing solution on the surface of the exposed wafer W and then rinses it with a rinse solution to develop a film of a metal-containing resist. The heat treatment unit U8 may perform heat treatment (PB: Post Bake) after the development treatment. Hereinafter, unless otherwise specified, the heat treatment in the heat treatment unit U8 is described as being “heat treatment before development treatment (PEB)”. In addition, the coating of the metal-containing resist will be described simply as a "coating".

A shelf unit U10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is divided into a plurality of cells arranged in the vertical direction. In the vicinity of the shelf unit U10, a conveyance device A7 including a lifting arm is provided. The transfer device A7 raises and lowers the wafer W between cells of the shelf unit U10.

A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is divided into a plurality of cells arranged in the vertical direction.

The interface block 6 transfers the wafer W to and from the exposure apparatus 3. For example, the interface block 6 incorporates a transfer device A8 including a transfer arm, and is connected to the exposure device 3. The conveyance apparatus A8 delivers the wafer W arranged on the shelf unit U11 to the exposure apparatus 3. The transfer device A8 receives the wafer W from the exposure device 3 and returns it to the shelf unit U11.

In Fig. 3, an example of a substrate processing procedure including coating and developing processing is shown. The control device 100 controls the coating/development apparatus 2 so as to execute the coating/development process in the following order, for example. First, the control device 100 controls the transfer device A1 to transfer the wafer W in the carrier C to the shelf unit U10, and transfers the wafer W to the cell for the processing module 11. The conveying device A7 is controlled so as to be disposed.

Subsequently, the control device 100 controls the transfer device A3 to transfer the wafer W of the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 11. Further, the control device 100 controls the coating unit U1 and the heat treatment unit U2 so as to form an underlayer film on the surface of the wafer W (step S01). Thereafter, the control device 100 controls the transfer device A3 to return the wafer W on which the lower layer film is formed to the shelf unit U10, and places the wafer W in the cell for the processing module 12. The conveying device A7 is controlled so that it may be.

Next, the control device 100 controls the conveyance device A3 so that the wafer W of the shelf unit U10 is conveyed to the coating unit U3 and the heat processing unit U4 in the processing module 12. Further, the control device 100 controls the coating unit U3 and the heat treatment unit U4 to form a film of a metal-containing resist on the lower layer film of the wafer W (step S02). After that, the control device 100 controls the transfer device A3 to return the wafer W to the shelf unit U10, and places the wafer W in the cell for the processing module 13. Control (A7).

Subsequently, the control device 100 controls the transfer device A3 so as to transfer the wafer W of the shelf unit U10 to each unit in the processing module 13. Further, the control device 100 controls the coating unit U5 and the heat treatment unit U6 to form an upper layer film on the film of the wafer W (step S03). After that, the control device 100 controls the transfer device A3 to transfer the wafer W to the shelf unit U11.

Next, the control device 100 controls the conveyance device A8 so that the wafer W accommodated in the shelf unit U11 may be sent to the exposure device 3. Then, in the exposure apparatus 3, an exposure treatment is performed on the film formed on the wafer W (step S04). Thereafter, the control device 100 receives the exposed wafer W from the exposure device 3, and transfers the wafer W to the cell for the processing module 14 in the shelf unit U11. The conveying device A8 is controlled so as to be disposed.

Subsequently, the control device 100 controls the conveyance device A3 to convey the wafer W of the shelf unit U11 to the heat processing unit U8 in the processing module 14. Then, the control device 100 controls the heat treatment unit U8 to perform heat treatment before development on the film of the wafer W (step S05). Subsequently, the control device 100, the developing unit U7 and the thermal processing unit (e.g., the developing unit U7 and the thermal processing unit ( U8) is controlled (steps S06 and S07). Thereafter, the control device 100 controls the transfer device A3 to return the wafer W to the shelf unit U10, and the transfer device A7 and the transfer device A7 to return the wafer W into the carrier C. It controls the conveyance device A1. In this way, the substrate processing including the coating and developing processing is completed.

In addition, the specific configuration of the substrate processing device is not limited to the configuration of the coating/developing device 2 illustrated above. The substrate processing apparatus is provided with a unit that performs a film forming process to form a film of a metal-containing resist, a heat treatment unit that heats the film after exposure treatment, a developing unit that develops the film, and a control device capable of controlling them. It may be.

(Heat treatment unit)

Next, an example of the heat processing unit U8 of the processing module 14 will be described in detail with reference to FIGS. 4 and 5. As shown in FIG. 4, the heat processing unit U8 includes a heating mechanism 20, a wafer lifting mechanism 30 (elevating portion), a receiving mechanism 40, a gas supply mechanism 60, and an exhaust gas. A mechanism 70 and a lower gas discharge mechanism 80 are provided. In addition, in FIG. 4, hatching showing that it is a cross section except for some elements is omitted.

The heating mechanism 20 is configured to heat the wafer W. The heating mechanism 20 includes a hot plate 21 and a hot plate temperature measuring unit 23. The hot plate 21 includes a hot plate heater 22. The hot plate 21 supports the wafer W to be subjected to heat treatment, and heats the supported wafer W. The hot plate 21 is formed in a substantially disk shape as an example. The diameter of the hot plate 21 may be larger than the diameter of the wafer W. The hot plate 21 has an arrangement surface 21a. By arranging the wafer W at a predetermined position on the placement surface 21a, the hot plate 21 supports the wafer W. The hot plate 21 may be made of a metal such as aluminum, silver, or copper having high thermal conductivity.

The hot plate heater 22 raises the temperature of the hot plate 21. The hot plate heater 22 may be provided inside the hot plate 21 or may be provided on the hot plate 21. The hot plate heater 22 may be constituted by a resistance heating element. As a current flows through the hot plate heater 22, the hot plate heater 22 generates heat. Then, heat from the hot plate heater 22 is transferred, and the temperature of the hot plate 21 increases. A current of a value according to an instruction from the control device 100 may flow to the hot plate heater 22, or a voltage of a value according to an instruction from the control device 100 may be applied, and a current according to the voltage value may flow. .

The hot plate temperature measuring unit 23 measures the temperature of the hot plate 21. As the hot plate temperature measuring unit 23, a temperature sensor (for example, a thermistor) may be used. The hot plate temperature measuring unit 23 may be provided inside the hot plate 21. The hot plate temperature measuring unit 23 may measure the temperature of the hot plate 21 repeatedly at predetermined intervals, or may measure the temperature of the hot plate 21 at a timing according to an instruction from the control device 100. The hot plate temperature measuring unit 23 outputs the measured value to the control device 100. For example, the hot plate temperature measuring unit 23 may output a voltage value according to the temperature of the hot plate 21 to the control device 100 as information (temperature information) about the temperature of the hot plate 21.

The wafer lifting mechanism 30 is configured to lift the wafer W on the hot plate 21. Specifically, the wafer lifting mechanism 30 controls the processing height at which the wafer W is disposed on the mounting surface 21a of the hot plate 21 and the transfer of the wafer W in the upper space spaced from the hot plate 21. The wafer W is raised or lowered between the height of the transfer to be performed. The wafer lifting mechanism 30 includes a plurality (for example, three) of support pins 31 and a lifting drive unit 32.

The support pin 31 is a pin that supports the wafer W from below. For example, the support pin 31 may be configured to extend in the vertical direction so as to penetrate the hot plate 21. The plurality of support pins 31 may be arranged at equal intervals from each other in the circumferential direction around the center of the hot plate 21. The elevating drive unit 32 raises and lowers the support pin 31 according to the instruction of the control device 100. The elevating drive unit 32 is, for example, an elevating actuator.

The accommodation mechanism 40 is configured to receive a wafer W that is an object of heat treatment. The accommodation mechanism 40 includes a chamber 41, a chamber drive unit 46, a chamber heater 44 (heater), and a chamber temperature measurement unit 45. The chamber 41 is configured to form a processing space S for performing heat treatment. In other words, the chamber 41 covers the processing space S on the hot plate 21. The chamber 41 includes a lower chamber 42 and an upper chamber 43.

The lower chamber 42 holds the hot plate 21. The lower chamber 42 may have a cylindrical shape so as to surround the periphery of the hot plate 21. The lower chamber 42 includes an upper flange 42a covering an upper surface of the peripheral portion of the hot plate 21, a lower flange 42b covering a lower surface of the peripheral portion of the hot plate 21, and an upper flange 42a and a lower flange ( By connecting 42b), you may be provided with the side wall 42c covering the circumferential surface of the hot plate 21. The lower chamber 42 may be fixed at a position determined in the heat processing unit U8.

The upper chamber 43 is a lid that forms the processing space S in the chamber 41 together with the lower chamber 42. When the upper chamber 43 comes into contact with the lower chamber 42, a processing space S is formed in the chamber 41. The upper chamber 43 has a top plate 43a, a side wall 43b, and a flange 43c.

The top plate 43a has a disk shape having the same diameter as the lower chamber 42. The top plate 43a is disposed so as to face the mounting surface 21a of the hot plate 21 in the vertical direction. That is, the top plate 43a covers the arrangement surface 21a of the hot plate 21. The lower surface of the top plate 43a constitutes the upper surface of the processing space S. The side wall 43b is configured to extend downward from the outer edge of the top plate 43a. The side wall 43b surrounds the arrangement surface 21a of the hot plate 21. The inner surface of the side wall 43b constitutes the peripheral surface of the processing space S. The flange 43c is configured to extend from the lower end of the side wall 43b toward the inside (the center of the hot plate 21). The flange 43c may protrude inward from the side wall 43b to the same extent as the upper flange 42a of the lower chamber 42. The upper surface and the arrangement surface 21a of the upper flange 42a constitute the lower surface of the processing space S.

The chamber driving unit 46 elevates the upper chamber 43. For example, the chamber driving unit 46 is a lifting actuator. When the upper chamber 43 is raised by the chamber driving unit 46, the chamber 41 is opened. By lowering the upper chamber 43 until it contacts the lower chamber 42 by the chamber driving part 46, the chamber 41 is in a closed state. When the chamber 41 is in a closed state, a processing space S is formed inside the chamber 41, and when the chamber 41 is in an open state, the space above the hot plate 21 is outside the chamber 41. It is connected to the space of.

The chamber heater 44 raises the temperature of the chamber 41 (upper chamber 43). The chamber heater 44 is provided in the upper chamber 43. For example, the chamber heater 44 may be provided inside the top plate 43a and the side wall 43b of the upper chamber 43, and may be provided on the surface of the top plate 43a and the side wall 43b. The chamber heater 44 may be constituted by a resistance heating element. As a current flows through the chamber heater 44, the chamber heater 44 generates heat. Then, heat from the chamber heater 44 is transferred, and the temperature of the upper chamber 43 increases. A current of a value according to an instruction from the control device 100 may flow to the chamber heater 44, or a voltage of a value according to an instruction from the control device 100 may be applied, and a current according to the voltage value may flow. .

The chamber temperature measuring unit 45 measures the temperature of the chamber 41 (upper chamber 43). As the chamber temperature measuring unit 45, a temperature sensor (for example, a thermistor) may be used. The chamber temperature measuring part 45 may be provided in the upper chamber 43, for example, may be provided inside the top plate 43a. The chamber temperature measuring unit 45 may measure the temperature of the upper chamber 43 repeatedly at predetermined intervals, or may measure the temperature of the upper chamber 43 at a timing according to an instruction from the control device 100. The chamber temperature measuring unit 45 outputs the measured value to the control device 100. For example, the chamber temperature measuring unit 45 may output a voltage value according to the temperature of the upper chamber 43 to the control device 100 as information (temperature information) about the temperature of the upper chamber 43.

The upper chamber 43 includes a gas discharge part 50. The gas discharge unit 50 discharges gas from above toward the wafer W on the hot plate 21 in the chamber 41. The gas discharge unit 50 discharges a gas containing moisture (hereinafter, referred to as “water containing gas”) toward the wafer W on the hot plate 21. The gas discharge unit 50 may discharge gas other than a moisture-containing gas. For example, the gas discharge unit 50 may discharge an inert gas toward the wafer W on the hot plate 21. The gas discharge part 50 is provided on the top plate 43a. The gas discharge unit 50 has a buffer space provided below the top plate 43a and a plurality of discharge holes 51 penetrating between the buffer space and the processing space S on the lower surface of the top plate 43a. .

The plurality of discharge holes 51 are scattered at a substantially uniform density in a portion of the lower surface of the top plate 43a facing the wafer W on the hot plate 21 (opposite surface 50a). For example, as shown in FIG. 5, the plurality of discharge holes 51 are in a region (hereinafter referred to as a “facing region”) of the facing surface 50a facing the wafer W on the hot plate 21. , Are arranged scattered. The opposing region is a region overlapping the wafer W on the hot plate 21 among the opposing surfaces 50a when viewed from the vertical direction. When the gas discharge unit 50 discharges the moisture-containing gas, a plurality of discharge holes (eg, the moisture content (humidity) in the space on the upper surface of the wafer W) are substantially uniform over the entire upper surface of the wafer W. 51) may be scattered (they may be scattered). The plurality of discharge holes 51 may be dotted so that the hole density becomes uniform in the opposite region. The hole density is a ratio occupied by the opening area of the discharge hole 51 per unit area in the opposite region.

The opening areas of the plurality of discharge holes 51 may be substantially the same as each other. When viewed from the vertical direction, the shape of the discharge hole 51 may be a circular shape. The spacing between the discharge holes 51 in the transverse direction may be uniform, and the spacing between the discharge holes 51 in the longitudinal direction may be uniform. The spacing between the discharge holes 51 may be uniform in both the transverse direction and the longitudinal direction.

Returning to FIG. 4, the gas supply mechanism 60 is configured to supply gas to the gas discharge unit 50. The gas supply mechanism 60 may supply at least one of a water-containing gas (first gas) and an inert gas (second gas) to the gas discharge unit 50. For example, the gas supply mechanism 60 includes a gas supply path 61, a gas switching unit 62, a gas supply source 63, a humidity control unit 64, and a gas supply source 65.

The gas supply path 61 is a flow path for supplying gas to the gas discharge unit 50. One end of the gas supply path 61 is connected to the gas discharge part 50. The other end of the gas supply path 61 is connected to each of the gas supply source 63 and the gas supply source 65 via the gas switching unit 62. The gas switching unit 62 switches the type of gas supplied to the gas discharge unit 50 according to the instruction of the control device 100. Specifically, the gas switching unit 62 switches between a first state in which the water-containing gas is discharged from the gas discharge unit 50 and a second state in which the inert gas is discharged from the gas discharge unit 50. In addition to the first state and the second state, the gas switching unit 62 may switch to a third state (gas stop state) in which no gas is discharged from the gas discharge unit 50. The gas switching unit 62 may be constituted by a switching valve.

The gas supply source 63 supplies the water-containing gas to the gas discharge unit 50 through the gas supply path 61, the gas conversion unit 62 and the humidity control unit 64. The humidity control unit 64 adjusts the moisture concentration of the gas in the gas supply source 63 and supplies the moisture-containing gas whose moisture concentration is adjusted to the gas discharge unit 50 through the gas conversion unit 62. For example, the humidity control unit 64 may have a function of humidifying the gas in the gas supply source 63 or may have a function of dehumidifying (dehydrating) the gas in the gas supply source 63. The humidity control unit 64 may adjust the moisture concentration so that the moisture concentration of the moisture-containing gas is about 40% to 60%. The moisture-containing gas whose moisture concentration is adjusted through the humidity control unit 64 is supplied to the gas discharge unit 50, and the moisture-containing gas is discharged from the gas discharge unit 50 into the chamber 41, whereby the chamber 41 ) The humidity inside is maintained at around 40% to 60%.

The gas supply source 65 supplies an inert gas to the gas discharge unit 50 via a gas supply path 61 and a gas switching unit 62. The inert gas is a gas that is less likely to react with the metal sublimation generated from the film when the wafer W is heated compared to the moisture-containing gas supplied from the gas supply source 63 and the humidity control unit 64. The gas supply source 65, as an inert gas, may supply a gas having a lower oxygen concentration than the moisture-containing gas supplied from the gas supply source 63 and the humidity control unit 64, and supply a gas with a low humidity. You may have it. For example, the gas supply source 65 may supply nitrogen (N ₂ ) gas as a gas having a low oxygen concentration, or may supply dry air as a gas having a low humidity.

The exhaust mechanism 70 (exhaust portion) is configured to discharge gas in the chamber 41 to the outside of the chamber 41. The exhaust mechanism 70 exhausts the inside of the chamber from the outer periphery of the processing space S. The exhaust mechanism 70 includes a plurality of exhaust holes 71 and an exhaust device 76. The plurality of exhaust holes 71 are provided corresponding to the outer peripheral portion of the processing space S. The plurality of exhaust holes 71 are provided in the top plate 43a of the upper chamber 43 and are respectively opened in the outer peripheral portion of the inner surface of the top plate 43a (that is, the outer peripheral portion of the upper surface of the processing space S). The exhaust device 76 discharges the gas in the processing space S to the outside of the chamber 41 through the plurality of exhaust holes 71. The exhaust device 76 is an exhaust pump, for example.

A rectifying portion 73 may be formed in the outer peripheral portion of the processing space S. When the inside of the processing space S is exhausted, the rectifying part 73 is a space for suppressing the occurrence of residence or vortex in the processing space S. For example, the rectifying part 73 may be formed between the gas discharge part 50 and the exhaust hole 71 (exhaust port 72) in the horizontal direction. The rectifying part 73 is formed so that the space|interval between the upper surface and the lower surface of the processing space S becomes small as it goes outward in the horizontal direction. For example, the upper surface of the rectifying part 73 may be formed by the outer edge of the lower surface of the top plate 43a, and the lower surface of the rectifying part 73 may be formed by the upper surface of the flange 43c of the upper chamber 43. . In this case, the top plate 43a may include an inclined surface 47 in which the gap with the flange 43c decreases as it faces outward in the horizontal direction on the lower surface of the outer edge. The exhaust port 72 of the exhaust hole 71 may be opened on the upper surface of the processing space S outside the rectifying portion 73. In other words, the exhaust hole 71 (exhaust mechanism 70) exhausts the inside of the chamber 41 from the outer periphery of the processing space S by sucking up gas from the upper portion of the outer peripheral portion of the processing space S.

The lower gas discharge mechanism 80 is configured to discharge gas from the mounting surface 21a of the hot plate 21 in the chamber 41. The lower gas discharge mechanism 80 includes a gas discharge part 81 (lower gas discharge part), a gas supply path 82, an on-off valve 83, and a gas supply source 84. The gas discharge part 81 discharges gas upward from the arrangement surface 21a of the hot plate 21. The gas discharge part 81 may be one or a plurality of gas discharge holes penetrating the hot plate 21 in the vertical direction.

The gas supply source 84 supplies gas to the gas discharge unit 81 via the gas supply path 82 and the on-off valve 83. The gas discharged from the gas discharge unit 81 may be a gas (for example, air) having a lower moisture concentration than the moisture-containing gas discharged from the gas discharge unit 50. Alternatively, the gas discharged from the gas discharge unit 81 may be the same gas as the moisture-containing gas discharged from the gas discharge unit 50 or the same gas as the inert gas discharged from the gas discharge unit 50.

The on-off valve 83 switches between a discharge state in which gas is discharged from the gas discharge unit 81 and a stop state in which the gas discharge from the gas discharge unit 81 is stopped. The opening/closing valve 83 is switched to the opening/closing state according to the instruction of the control device 100. For example, the on-off valve 83 may be a solenoid valve (solenoid valve). When the on-off valve 83 is in the open state, the gas in the gas supply source 84 is supplied to the gas discharge unit 81 via the gas supply path 82, and the gas is discharged from the gas discharge unit 81. When the on-off valve 83 is in the closed state, the gas in the gas supply source 84 is not supplied to the gas discharge unit 81, and the gas is not discharged from the gas discharge unit 81 (gas discharge is stopped).

(controller)

Next, a specific configuration of the control device 100 is illustrated. As shown in Fig. 6, the control device 100 has a functional configuration (hereinafter, referred to as a'function module'), a hot plate temperature acquisition unit 102, a hot plate heater control unit 104, and a chamber temperature acquisition unit ( 106), chamber heater control unit 108 (heater control unit), chamber opening/closing control unit 110, wafer lifting control unit 112 (elevating control unit), lower discharge control unit 114 (discharging control unit), and gas switching A control unit 116 (switching control unit) and an operation command holding unit 119 are provided.

The hot plate temperature acquisition unit 102 is configured to acquire temperature information of the hot plate 21. Specifically, the hot plate temperature acquisition unit 102 acquires temperature information of the hot plate 21 measured by the hot plate temperature measurement unit 23. For example, the hot plate temperature acquisition unit 102 acquires a voltage value according to the temperature of the hot plate 21 as temperature information from the hot plate temperature measurement unit 23. The hot plate temperature acquisition unit 102 outputs the acquired temperature information to the hot plate heater control unit 104.

The hot plate heater control unit 104 is configured to control the hot plate heater 22. For example, the hot plate heater control unit 104 controls the hot plate heater 22 so that the temperature of the hot plate 21 is maintained at a predetermined target value. Even if the hot plate heater control unit 104 calculates the deviation between the target value and the temperature information (measured value) acquired by the hot plate temperature acquisition unit 102, and adjusts the control amount to the hot plate heater 22 based on the calculated deviation do. For example, the hot plate heater control unit 104 performs proportional control, proportional/integral control, or proportional/integral/differential control based on the deviation between the measured value of the temperature of the hot plate 21 and the target value. You may adjust the value of the current flowing through the heater 22.

The chamber temperature acquisition unit 106 is configured to acquire temperature information of the chamber 41 (upper chamber 43). Specifically, the chamber temperature acquisition unit 106 acquires temperature information of the chamber 41 measured by the chamber temperature measurement unit 45. For example, the chamber temperature acquisition unit 106 acquires a voltage value corresponding to the temperature of the chamber 41 as temperature information from the chamber temperature measurement unit 45. The chamber temperature acquisition unit 106 outputs the acquired temperature information to the chamber heater control unit 108.

The chamber heater control unit 108 is configured to control the chamber heater 44. For example, the chamber heater control unit 108 controls the chamber heater 44 so that the temperature of the chamber 41 is maintained at a predetermined target value. The target value for the temperature of the chamber 41 may be set according to the target value for the temperature of the hot plate 21. The chamber heater control unit 108 may control the chamber heater 44 so that the temperature of the chamber 41 is maintained at a target value equal to the target value for the temperature of the hot plate 21. The chamber heater control unit 108 calculates a deviation between the target value and the temperature information (measured value) acquired by the chamber temperature acquisition unit 106, and adjusts the amount of control to the chamber heater 44 based on the calculated deviation. do. For example, the chamber heater control unit 108 performs proportional control, proportional/integral control, or proportional/integral/differential control based on the deviation between the measured value of the temperature of the chamber 41 and the target value. You may adjust the current value passed through the heater 44.

The chamber opening/closing control unit 110 is configured to perform opening/closing control of the chamber 41. The chamber opening/closing control unit 110 switches the opening/closing state of the chamber 41. Specifically, the chamber opening and closing control unit 110 switches between an open state in which the upper chamber 43 is separated from the lower chamber 42 and a closed state in which the upper chamber 43 is in contact with the lower chamber 42. . For example, the chamber opening/closing control unit 110 drives the chamber driving unit 46 and raises and lowers the upper chamber 43 to switch the open state and the closed state. The chamber opening/closing control unit 110 drives the chamber driving unit 46 and moves the chamber 41 from the closed state to the open state by raising the upper chamber 43 to a height spaced apart from the lower chamber 42 by a predetermined distance. do. The chamber opening/closing control unit 110 drives the chamber driving unit 46 and lowers the upper chamber 43 until it contacts the lower chamber 42, thereby switching the chamber 41 from the open state to the closed state.

The wafer lift control unit 112 is configured to lift the wafer W on the hot plate 21. Specifically, the wafer lift control unit 112 drives the lift drive unit 32 of the wafer lift mechanism 30 to lift the support pin 31. For example, the wafer lift control unit 112 raises the support pin 31 by the lift drive unit 32 while the wafer W is disposed on the heating plate 21 to lift the wafer W. Raise. After the wafer W is placed on the support pin 31 while the support pin 31 is raised, the wafer lift control unit 112 lowers the support pin 31 by the lift drive unit 32 to lower the wafer (W) is placed on the hot plate 21. The wafer lifting control unit 112 may output a signal indicating that the wafer W is raised and lowered to the lower discharge control unit 114 when raising and lowering the wafer W.

The lower discharge control unit 114 is configured to discharge gas from the lower gas discharge mechanism 80. Specifically, the lower discharge control unit 114 discharges gas from the gas discharge unit 81 into the processing space S by switching the on/off valve 83 from the closed state to the open state. The lower discharge control unit 114 may switch the on/off valve 83 from the closed state to the open state when a signal indicating the rise of the wafer W is received from the wafer lifting control unit 112. When the lower discharge control unit 114 receives a signal indicating the lowering of the wafer W from the wafer lift control unit 112, the on-off valve 83 may be switched from the open state to the closed state. That is, the lower discharge control unit 114 may stop the discharge of gas from the gas discharge unit 81 when a signal indicating the lowering of the wafer W is received.

The gas switching control unit 116 is configured to control the gas switching unit 62. Specifically, the gas switching control unit 116 is in a state in which the gas supply source 63 is connected to the gas discharge unit 50 (a first state) and a state in which the gas supply source 65 is connected to the gas discharge unit 50 ( The gas switching unit 62 is controlled to switch the second state). In the state where the gas supply source 63 is connected to the gas supply path 61, the gas discharge unit 50 discharges the water-containing gas. In a state where the gas supply source 65 is connected to the gas supply path 61, the gas discharge unit 50 discharges an inert gas.

The operation command holding unit 119 holds an operation command indicating a predetermined condition for heat processing in the heat processing unit U8. For example, in the operation command, the target value for the temperature of the hot plate 21, the target value for the temperature of the chamber 41, the time for discharging the water-containing gas from the gas discharge unit 50, and the gas discharge unit 50 Information on the time to discharge the inert gas from) is included.

The control device 100 is configured by one or a plurality of control computers. For example, the control device 100 has the circuit 120 shown in FIG. The circuit 120 includes one or more processors 121, a memory 122, a storage 123, a timer 124, and an input/output port 125. The storage 123 has a storage medium readable by a computer, such as a hard disk, for example. The storage medium stores a program for causing the control device 100 to execute a substrate processing procedure described later. The storage medium may be a removable medium such as a nonvolatile semiconductor memory, a magnetic disk, and an optical disk. The memory 122 temporarily stores a program loaded from a storage medium of the storage 123 and an operation result by the processor 121. The processor 121 configures each of the above-described functional modules by executing the program in cooperation with the memory 122. The timer 124 measures the elapsed time, for example, by counting a reference pulse of a constant period. The input/output port 125 inputs/outputs an electric signal to/from the thermal processing unit U8 in response to a command from the processor 121.

In addition, the hardware configuration of the control device 100 is not necessarily limited to configuring each function module by a program. For example, each functional module of the control device 100 may be constituted by a dedicated logic circuit or an application specific integrated circuit (ASIC) incorporating the same.

[Substrate processing sequence]

Next, as an example of the substrate processing method, a substrate processing procedure performed in the coating/developing apparatus 2 will be described. This substrate processing procedure includes a temperature adjustment procedure of the hot plate 21, a temperature adjustment procedure of the chamber 41, and a heat treatment procedure in the heat processing unit U8.

8A is a flowchart showing an example of a temperature adjustment procedure of the hot plate 21. In this order of temperature adjustment of the hot plate 21, the control device 100 first executes step S11. In step S11, for example, the hot plate temperature acquisition unit 102 acquires temperature information (measured value) of the hot plate 21 from the hot plate temperature measurement unit 23. The hot plate temperature acquisition unit 102 outputs the acquired temperature information to the hot plate heater control unit 104.

Subsequently, the control device 100 executes steps S12 and S13. In step S12, for example, the hot plate heater control unit 104 calculates a deviation between the measured value of the temperature of the hot plate 21 and the target value. In step S13, the hot plate heater control unit 104 controls the hot plate heater 22 based on the deviation calculated in step S12. For example, the hot plate heater control unit 104 may obtain a control amount by a proportional control method based on the deviation calculated in step S12 and the like, and adjust the current value to the hot plate heater 22 so that the deviation approaches zero. .

The control device 100 repeats steps S11 to S13 at a predetermined control cycle. Thereby, the temperature of the hot plate 21 is maintained near the target value, and the wafer W disposed on the hot plate 21 is heated to the target value or a temperature near the target value. In addition, the control device 100 maintains the temperature of the hot plate 21 in the vicinity of the target value from the operation of the coating/development device 2 to the end of the processing for the wafer W of the predetermined number of processed sheets. You can continue.

8B is a flow chart showing an example of a procedure for adjusting the temperature of the chamber 41. In the temperature adjustment sequence of the chamber 41, the control device 100 first executes step S21. In step S21, for example, the chamber temperature acquisition unit 106 acquires temperature information (measured value) of the chamber 41 from the chamber temperature measurement unit 45. The chamber temperature acquisition unit 106 outputs the acquired temperature information to the chamber heater control unit 108.

Then, the control device 100 executes steps S22 and S23. In step S22, for example, the chamber heater control unit 108 calculates a deviation between the measured value of the temperature of the chamber 41 and the target value. In step S23, the chamber heater control unit 108 controls the chamber heater 44 based on the deviation calculated in step S22. For example, the chamber heater control unit 108 may obtain a control amount by the proportional control method based on the deviation calculated in step S22, and adjust the current value to the chamber heater 44 so that the deviation approaches zero. . The chamber heater control unit 108 may control the chamber heater 44 so that the temperature of the chamber 41 substantially matches the temperature of the hot plate 21. In other words, the target value for the temperature of the chamber 41 may be set substantially the same as the target value for the temperature of the hot plate 21. In addition, the fact that the temperature of the chamber 41 approximately matches the temperature of the hot plate 21 is not only the case that the temperature is completely matched, but also the difference between the temperatures is the number of the temperature of any one of the hot plate 21 and the chamber 41 It includes cases that fall within the range of %.

The control device 100 repeats steps S21 to S23 at a predetermined control cycle. Thereby, the temperature of the chamber 41 is maintained in the vicinity of the target value. In addition, the control device 100 maintains the temperature of the chamber 41 in the vicinity of the target value from the operation of the coating/development device 2 to the end of the processing on the wafer W of the predetermined number of processing sheets. You can continue.

9 is a flowchart showing an example of a heat treatment procedure in the heat treatment unit U8. This heat treatment procedure is started in a state in which the water-containing gas is discharged from the gas discharge unit 50 by the control device 100 and the exhaust system 70 is exhausted. The control device 100 first executes step S31. In step S31, for example, the chamber opening and closing control unit 110 drives the chamber driving unit 46 to raise the upper chamber 43. Thereby, the space in the chamber 41 is connected to the space outside the chamber 41.

Subsequently, the control device 100 executes step S32. In step S32, the control device 100 controls the transfer device A3 and the wafer lifting mechanism 30 so that the wafer W is carried into the chamber 41. For example, while the wafer lift control unit 112 drives the lift drive unit 32 to raise the support pin 31, the control device 100 arranges the wafer W on the support pin 31. It controls the conveyance device A3.

Subsequently, the control device 100 executes steps S33 and S34. In step S33, for example, the chamber opening/closing control unit 110 drives the chamber driving unit 46 to lower the upper chamber 43. In step S34, the wafer lift control unit 112 drives the lift drive unit 32 to lower the support pin 31 to place the wafer W supported by the support pin 31 on the hot plate 21. Let it. In this way, the processing space S is formed in the chamber 41, and the wafer W is disposed on the placement surface 21a, whereby the heat treatment of the wafer W to be processed is started.

Subsequently, the control device 100 executes step S35. In step S35, the control device 100 waits from the start of the heat treatment of the wafer W until the first predetermined time has elapsed. Thereby, the heat treatment of the wafer W is performed for the first predetermined time in the state in which the water-containing gas is discharged (full) in the processing space S. After the first predetermined time has elapsed, the control device 100 may execute step S36. In step S36, for example, from the first state in which the water-containing gas is discharged by the gas discharging unit 50, the gas switching control unit 116 is the first state in which the inert gas is discharged by the gas discharging unit 50. The gas conversion unit 62 is controlled to be converted to the 2 state.

Subsequently, the control device 100 executes step S37. In step S37, the control device 100 waits until a second predetermined time elapses from the switching to the inert gas. The second predetermined time is set in advance so that the water-containing gas in the processing space S can be replaced with an inert gas. As an example, the second predetermined time may be set to about 1/6 to 1/2 of the first predetermined time. After the second predetermined time has elapsed, the control device 100 executes step S38. In step S38, the wafer lift control unit 112 drives the lift drive unit 32 to lift the support pin 31 so as to separate the wafer W to be processed from the hot plate 21. Thereby, the heat treatment on the wafer W is ended.

Subsequently, the control device 100 executes step S39. In step S39, the lower discharge control unit 114 switches the on/off valve 83 from the closed state to the open state so that the discharge of gas from the gas discharge unit 81 is started. Thereby, the gas discharge part 81 starts to discharge gas into the space between the wafer W raised by the support pin 31 and the hot plate 21. The lower discharge control unit 114 keeps the on-off valve 83 in an open state, and continues the state in which gas is discharged from the gas discharge unit 81.

Subsequently, the control device 100 executes steps S40 and S41. In step S40, the chamber opening/closing control unit 110 drives the chamber driving unit 46 to raise the upper chamber 43. In step S41, for example, the control device 100 controls the transfer device A3 so that the wafer W is carried out from the chamber 41. Then, the control device 100 executes step S42. In step S42, the lower discharge control unit 114 opens the opening/closing valve 83 so that the discharge of gas from the gas discharge unit 81 is stopped after the wafer W is discharged from the chamber 41. Transition from state to closed state.

Subsequently, the control device 100 executes step S43. In step S43, the gas switching control unit 116 switches the gas from a state in which the inert gas is discharged by the gas discharge unit 50 to a state in which the water-containing gas is discharged by the gas discharge unit 50. Control the unit 62. Thus, the heat treatment procedure for one wafer W is ended. After that, the control device 100 returns the process to step S32. Thereafter, the heat treatment on the wafer W is repeated.

[Effect of embodiment]

In the coating/development apparatus 2 according to the present embodiment described above, a heat treatment unit U8 for thermally treating a wafer W on which a film of a metal-containing resist has been formed and subjected to exposure treatment on the film, and a heat treatment And a developing unit U7 that develops the applied film. The heat processing unit U8 includes a hot plate 21 supporting and heating the wafer W, a chamber 41 covering the processing space S on the hot plate 21, and moisture in the chamber 41. A gas discharge unit 50 for discharging the contained gas toward the wafer W on the hot plate 21 from above, an exhaust mechanism 70 for exhausting the inside of the chamber 41 from the outer periphery of the processing space S, It is provided in the chamber 41 and has a chamber heater 44 for heating the chamber 41.

The substrate processing method performed in the coating/development apparatus 2 includes forming a film of a metal-containing resist on the wafer W, and heat treating the wafer W after which the film has been formed and subjected to exposure treatment on the film. And developing the heat-treated film. The heat treatment includes heating the wafer W on the hot plate 21, and in the chamber 41 covering the processing space S on the hot plate 21, containing moisture from above toward the wafer W. It includes discharging gas, exhausting the inside of the chamber 41 from the outer periphery of the processing space S, and heating the chamber 41 by the chamber heater 44 provided in the chamber 41.

With the heat treatment of the wafer W, a metal sublimation is generated from the film of the metal-containing resist. This metal sublimation tends to be more likely to adhere to a lower temperature peripheral member (for example, the chamber 41) than the hot plate 21. In the coating/development apparatus 2 and the substrate processing method, the temperature of the chamber 41 is increased by the chamber heater 44, so that the metal sublimation from the film accompanying the heat treatment adheres to the chamber 41. It is difficult. For this reason, it is suppressed that the metal sublimation product from the film of one wafer W adheres to the other wafer W to be heat-treated after the processing of the wafer W (metal contamination). As a result, it becomes possible to improve the stability of the quality of a resist pattern using a metal-containing resist.

The size of the resist pattern using the metal-containing resist is affected by the moisture content (humidity) in the chamber 41 during heat treatment. When there is a difference in the amount of moisture between regions in one wafer W, a difference occurs in the amount of moisture reacted in the film (amount of reacted moisture), and a difference occurs between regions in the resist pattern. When exhaust is performed from the outer periphery of the processing space (S), if the flow rate of the gas discharged from the gas discharge unit 50 is too small compared to the exhaust amount, it is in the outer periphery area compared to the central area of the wafer W during heat treatment. There is a fear that the amount of moisture in the reaction may decrease. That is, there is a possibility that a difference in the size of the resist pattern may occur between the central region of the wafer W and the outer circumferential region.

In contrast, in the coating/development apparatus 2 described above, since the temperature of the image chamber 43 including the gas discharge unit 50 is increased, the water-containing gas is heated before discharge from the gas discharge unit 50. Become and thermally expand. For this reason, the flow rate per unit time of the water-containing gas discharged from the gas discharge unit 50 is larger than that in the case where the chamber heater 44 is not provided. Thereby, gas flows more from the center region toward the outer circumference in the processing space S, and the difference in the amount of reaction moisture between the central region and the outer circumferential region of the wafer W is reduced. Therefore, the resist in one wafer W The difference in size of the pattern is reduced (the resist pattern is uniformed). As a result, it becomes possible to improve the stability of the quality of a resist pattern using a metal-containing resist.

In the coating/development apparatus 2, the heat treatment unit U8 further includes a humidity control unit 64 that adjusts the humidity of the moisture-containing gas discharged from the gas discharge unit 50. In this case, the variation between the wafers W in the amount of reaction moisture in the film of the wafer W can be suppressed. As a result, the error in the size of the resist pattern between the wafers W is reduced, so that it becomes possible to improve the dimensional stability of the resist pattern. In addition, even when the chamber heater 44 is not provided in the chamber 41, by adjusting the humidity of the moisture-containing gas by the humidity control unit 64, at least the dimensions of the resist pattern between the wafers W are It is effective in suppressing errors.

In the coating/developing apparatus 2, the gas discharge unit 50 includes a plurality of discharge holes 51 interspersed along a surface facing the wafer W on the hot plate 21. In this configuration, compared to the case where one discharge hole is provided, it is easier to disperse the moisture-containing gas. As a result, uniformity of the reaction moisture content of the film in one wafer W is achieved more reliably.

The coating/development device 2 further includes a chamber heater control unit 108 that controls the chamber heater 44 so that the temperature of the upper chamber 43 substantially matches the temperature of the hot plate 21 during heat treatment. . As the hot plate 21 rises to a predetermined target temperature and the wafer W on the hot plate 21 is heated, a metal sublimation is generated from the film. Since the upper chamber 43 approaches the temperature at the time of generation of the metal sublimation, adhesion of the metal sublimation due to deterioration in the upper chamber 43 is unlikely to occur. For this reason, it is suppressed that the metal sublimation adheres to the chamber 41 more reliably. As a result, it becomes possible to suppress metal contamination more reliably.

The coating/development device 2 is in a first state in which the water-containing gas is discharged from the gas discharge unit 50, and is less likely to react with the metal sublimation from the film compared to the water-containing gas from the gas discharge unit 50. A gas switching unit 62 for switching the second state for discharging gas, and a gas switching control unit 116 for controlling the gas switching unit 62 to be switched from the first state to the second state during heat treatment. Equipped. When the metal sublimation from the film reacts with a component (for example, oxygen) in the processing space S and deteriorates, the metal sublimation may easily adhere to the chamber 41. In the above configuration, since gas that is difficult to react with the metal sublime is discharged from the gas discharge unit 50 during the heat treatment, deterioration of the metal sublimation is suppressed, and adhesion of the metal sublimation to the chamber 41 can be suppressed. . As a result, it becomes possible to suppress metal contamination more reliably. In addition, even when the chamber heater 44 is not provided in the chamber 41, the above-described at least suppression of metal contamination (suppression of deterioration of the metal sublimation) by switching to discharge of gas that is difficult to react with the metal sublimation during heat treatment ) Is valid.

In the coating/developing apparatus 2, the heat processing unit U8 includes a wafer lifting mechanism 30 for lifting the wafer W on the hot plate 21, and an upper surface of the hot plate 21 (placement surface 21a). It further has a gas discharge portion 81 for discharging the gas upward from ). After the heat treatment of one wafer W is completed, there is a case where a metal sublimation product from the film adheres to a low-temperature peripheral member (for example, the lower chamber 42) around the hot plate 21. In this case, when the other wafer W is raised by the wafer lifting mechanism 30, negative pressure is generated in the space between the wafer W and the hot plate 21, and the metal sublimation adhering to the peripheral member There is a possibility that the metal sublimation product is attracted to the back surface of the wafer W and adheres to the back surface of the wafer W. In the above configuration, when the wafer W is raised by the wafer lifting mechanism 30, gas can be discharged from the gas discharge unit 81, so that when the wafer W is raised, the metal sublimation is It can be suppressed from being pulled to the back side of (W). As a result, it becomes possible to suppress metal contamination more reliably. In addition, even when the chamber heater 44 is not provided in the chamber 41, at least metal contamination is suppressed by discharging the gas from the gas discharge unit 81 (adherence of the metal sublimation on the back surface of the wafer W). Suppression).

In the coating/development device 2, after the heat treatment is finished, a wafer lifting control unit 112 that controls the wafer lifting mechanism 30 to raise the wafer W, and the wafer W on the hot plate 21 are In the elevated state, a lower discharge control unit 114 is further provided that controls the lower gas discharge mechanism 80 so as to discharge gas from the upper surface of the hot plate 21. In this case, since gas is not discharged from the gas discharge unit 81 during heat treatment, the heating temperature for the wafer W can be stabilized. That is, it becomes possible to achieve both suppression of metal contamination and stability of heat treatment.

In the coating/development device 2, a rectifying portion 73 is formed in the outer peripheral portion of the processing space S in which the distance between the upper surface and the lower surface becomes smaller as it goes outward. In this configuration, compared to the case where the distance between the upper surface and the lower surface is substantially constant in the outer circumferential portion of the processing space S, it is difficult to cause retention in the flow of gas accompanying exhaust gas. As a result, it becomes possible to exhaust the inside of the chamber 41 more reliably.

In the coating/developing device 2, the exhaust hole 71 is opened on the upper surface of the processing space S outside the rectifying portion 73. In this case, the airflow flowing toward the exhaust hole 71 is liable to be guided into the exhaust hole 71 because retention is not generated by the rectifying portion 73. As a result, it becomes possible to exhaust the inside of the chamber 41 more reliably.

(Modification example)

As mentioned above, although the embodiment has been described, the present disclosure is not necessarily limited to the above-described embodiment, and various changes can be made without departing from the gist thereof.

In the heat treatment procedure described above, the control device 100 may perform the treatment by changing the order of each step, or may execute two or more steps in parallel, within a range in which the heat treatment is not affected. For example, the control device 100 may execute step S38 and step S39 in parallel, or may execute step S39 before executing step S38. The control device 100 may execute the processing of step S39 after step S40.

The control device 100 does not need to execute the process of step S36 after the lapse of the first predetermined time. In other words, the heat treatment unit U8 may perform heat treatment of the wafer W from start to finish in a state in which a moisture-containing gas is discharged (filled) into the chamber 41 (process space S). . In this case, the gas supply mechanism 60 does not have to be equipped with the gas supply source 65 which supplies an inert gas.

[Second Embodiment]

Next, a substrate processing system according to a second embodiment will be described with reference to FIGS. 4 and 10. In the substrate processing system according to the second embodiment, the heat processing unit U8 includes a flow rate switching unit 66 and the control device 100 includes a flow rate switching control unit 118 (switching control unit) (Fig. 6) It is different from the first embodiment in points.

The flow rate switching unit 66 may switch the flow rate of the gas supplied from the gas supply source 63 toward the gas discharge unit 50. For example, the flow rate switching unit 66 may be constituted by a control valve capable of adjusting the flow rate (pressure) of the gas from the gas supply source 63. The flow rate switching unit 66 includes a first state in which the water-containing gas is discharged from the gas discharge unit 50 at a first flow rate, and the water-containing gas is discharged from the gas discharge unit 50 at a second flow rate greater than the first flow rate. The discharged second state is switched.

10 shows an example of a heat treatment procedure in the substrate processing system according to the second embodiment. This heat treatment procedure is different from the heat treatment procedure according to the first embodiment in that the flow rate of the gas discharged from the gas discharge unit 50 is switched during heat treatment. Specifically, first, the control device 100 executes steps S51 to S55. Steps S51 to S55 are respectively executed in the same manner as steps S31 to S35, and thus description thereof will be omitted. In step S55, after the lapse of the first predetermined time, the control device 100 executes step S56. In step S56, for example, from the first state in which the water-containing gas is discharged by the gas discharge unit 50 at the first flow rate, the flow rate switching control unit 118 is The flow rate switching unit 66 is controlled to switch to a second state in which the water-containing gas is discharged at a flow rate.

Then, the control device 100 waits for a second predetermined time by executing step S57. Thereby, after the lapse of the first predetermined time, the water-containing gas is discharged from the gas discharge unit 50 at the second predetermined time and the second flow rate. After the lapse of the second predetermined time, the control device 100 executes steps S58 to S60 without performing the same processing as in step S39. Steps S58 to S60 are respectively executed in the same manner as steps S38, S40, and S41, so their description is omitted. Subsequently, the control device 100 executes step S61. In step S61, for example, from the second state in which the water-containing gas is discharged by the gas discharge unit 50 at a second flow rate, the flow rate switching control unit 118 is The flow rate switching unit 66 is controlled to switch to the first state in which the water-containing gas is discharged at a flow rate.

Thus, the heat treatment for one wafer W is ended. After that, the control device 100 returns the process to step S52. Thereafter, the heat treatment on the wafer W is repeated. In addition, when this illustrated heat treatment procedure is performed, the gas supply mechanism 60 does not have to be provided with the gas supply source 65 for supplying an inert gas. The control device 100 does not have to be provided with the lower discharge control unit 114 and the gas switching control unit 116.

The heat processing unit U8 may perform heat treatment of the wafer W by combining the switching of the flow rate in the second embodiment and the switching of the type of gas in the first embodiment. For example, the gas switching unit 62 (flow rate switching unit) includes a first state in which a water-containing gas (first gas) is discharged from the gas discharge unit 50 at a first flow rate, and the gas discharge unit 50 You may switch the second state in which another gas (second gas) different from the water-containing gas is discharged at a second flow rate from. For example, the gas supply source 65 may supply dry air as another gas to the gas discharge unit 50. Dry air is a gas having a lower humidity than a moisture-containing gas. The control device 100 may perform control so that the heat treatment combining the switching of the flow rate and the gas type may be executed similarly to the heat treatment procedure shown in FIG. 9. For example, the gas switching control unit 116 (switching control unit), from the first state in which the water-containing gas is discharged at the first flow rate by the gas discharge unit 50 in step S36, the gas discharge unit ( The gas switching unit 62 may be controlled so as to switch to a second state in which dry air is discharged at a second flow rate by 50).

Also in the coating/development apparatus 2 according to the second embodiment, since the temperature of the chamber 41 is increased by the chamber heater 44, it is effective in suppressing metal contamination and uniformity of the resist pattern.

In the coating/development device 2 according to the second embodiment, a first state in which a water-containing gas is discharged from the gas discharge unit 50 at a first flow rate, and a first state in which a water-containing gas is discharged from the gas discharge unit 50 is greater than the first flow rate. 2 A flow rate switching unit (gas switching unit 62 or flow rate switching unit 66) for switching a second state in which a water-containing gas or a gas different from the water-containing gas is discharged at a flow rate, and during heat treatment, the first A switching controller (flow rate switching controller 118 or gas switching controller 116) for controlling the flow rate switching unit to be switched from the state to the second state is further provided. In this case, during the heat treatment, when the flow rate of the gas discharged from the gas discharge unit 50 increases, the metal sublimation from the film is rapidly discharged. For this reason, adhesion of the metal sublimation to the peripheral member is suppressed, and thus metal contamination is suppressed. In addition, even when the chamber heater 44 is not provided in the chamber 41, it is effective in suppressing adhesion of metal sublimates by increasing the flow rate of the above-described at least gas in the middle.

The gas switching unit 62 discharges a moisture-containing gas containing moisture from the gas discharge unit 50 at a first flow rate in the first state, and in the second state, the humidity is lower than that of the moisture-containing gas. Gas is discharged from the gas discharge unit 50 at a second flow rate. The dimensional stability may deteriorate as the gas flow rate increases during the heat treatment. However, when the gas flow rate is large, the low-humidity gas is discharged. Therefore, it is compatible with the adhesion of metal sublimates and the dimensional stability of the resist pattern. This is planned.

[Third Embodiment]

Next, a substrate processing system according to a third embodiment will be described with reference to FIGS. 11 and 12. In the substrate processing system according to the third embodiment, the heat processing unit U8 includes an outer circumferential exhaust mechanism 79 for performing outer circumferential exhaust and a central exhaust mechanism 90 for performing central exhaust, and a heat processing unit U8 ) Is different from the first embodiment in that the lower gas discharge mechanism 80 is not provided. The outer circumferential exhaust mechanism 79 (outer circumferential exhaust portion) includes a plurality of exhaust holes 71, an exhaust path 74, an on-off valve 75, and an exhaust device 76.

One end of the exhaust path 74 is connected to a plurality of exhaust holes 71, and the other end of the exhaust path 74 is connected to the exhaust device 76 via an on-off valve 75. The on-off valve 75 switches between an exhaust state in which exhaust is performed from the outer periphery of the processing space S and a stop state in which exhaust from the outer periphery of the processing space S stops according to the instruction of the control device 100 do. For example, the on-off valve 75 may be a solenoid valve (solenoid valve).

The central exhaust mechanism 90 is configured to exhaust the inside of the chamber 41 (process space S) from the central region of the processing space S. The amount of exhaust by the central exhaust mechanism 90 (volume of gas discharged from the inside of the chamber 41 per unit time) may be larger than the amount of exhaust by the outer peripheral exhaust mechanism 79. As an example, the exhaust amount of the central exhaust mechanism 90 may be about 2 to 4 times the exhaust amount of the outer peripheral exhaust mechanism 79. The central exhaust mechanism 90 (central exhaust part) includes an exhaust hole 91, an exhaust path 92, an on-off valve 93, and an exhaust device 94.

The exhaust hole 91 discharges gas from the central region in the chamber 41 of the processing space S to the outside of the chamber 41. The exhaust hole 91 may be provided corresponding to the center of the hot plate 21 (wafer W on the hot plate 21). The exhaust hole 91 may penetrate the top plate 43a of the upper chamber 43 including the gas discharge part 50 in the vertical direction.

One end of the exhaust path 92 is connected to the exhaust hole 91, and the other end of the exhaust path 92 is connected to the exhaust device 94 via an on-off valve 93. The on-off valve 93 is in an exhaust state in which exhaust is performed from the central region of the processing space S and a stop state in which exhaust from the central region of the processing space S stops according to the instruction of the control device 100 Switch. For example, the on-off valve 93 may be a solenoid valve (solenoid valve). The exhaust device 94 may be constituted by an exhaust pump that sucks out gas in the processing space S.

12 shows an example of a heat treatment procedure performed in the substrate processing system according to the third embodiment. In this heat treatment sequence, the moisture-containing gas is continuously discharged from the gas discharge unit 50 while the heat treatment is continued, and the central discharge is performed in addition to the outer circumferential exhaust from the middle of the heat treatment, according to the first embodiment. It is different from the heat treatment order. In the heat treatment procedure according to the third embodiment, as in the first embodiment, the discharge of the water-containing gas from the gas discharge unit 50 and the exhaust from the outer circumference through the plurality of exhaust holes 71 (outer circumference exhaust) are performed. It starts from the done state.

The control device 100 first executes steps S71 to S75. Steps S71 to S75 are respectively executed in the same manner as steps S31 to S35, and thus descriptions thereof will be omitted. In step S75, after the lapse of the first predetermined time, the control device 100 executes step S76. In step S76, for example, the control device 100 controls the on-off valve 93 so that the exhaust by the central exhaust is switched from the stopped state to the exhaust state. Thereby, in the chamber 41, in addition to the outer circumferential exhaust by the outer circumferential exhaust mechanism 79, central exhaust by the central exhaust mechanism 90 is performed.

Then, the control device 100 waits for a second predetermined time by executing step S77. Thereby, after the lapse of the first predetermined time, the inside of the chamber 41 is exhausted by the second predetermined time, the outer circumferential exhaust and the central exhaust. After the second predetermined time has elapsed, the control device 100 executes steps S78 to S80. The second predetermined time may be set to the same length as the first predetermined time. Steps S78 to S80 are respectively executed in the same manner as steps S38, S40, and S41, so their description is omitted. Subsequently, the control device 100 executes step S81. In step S81, for example, the control device 100 controls the on-off valve 93 so that the exhaust by the central exhaust is switched from the exhaust state to the stop state. That is, the control device 100 stops central exhaust.

Thus, the heat treatment for one wafer W is ended. After that, the control device 100 returns the process to step S72. Thereafter, the heat treatment on the wafer W is repeated. In addition, when this illustrated heat treatment procedure is executed, the control device 100 may be provided with an exhaust control unit that controls the open/close state of the on-off valve 93 as a function module. The control device 100 may stop the outer circumferential exhaust by controlling the open/close state of the on-off valve 75 while the central exhaust is being performed.

Also in the coating/development apparatus 2 according to the third embodiment, since the temperature of the chamber 41 is increased by the chamber heater 44, it is effective in suppressing metal contamination and uniformity of the resist pattern.

When exhaust is performed from the outer periphery of the processing space S, there is a concern that the amount of reacted moisture in the central region of the wafer W increases as compared to the outer periphery of the wafer W as the heat treatment proceeds. . In the coating/development device 2 according to the third embodiment, during heat treatment, it is switched to a state in which central exhaust in addition to the outer periphery exhaust is performed, so that after the conversion, moisture skewed to the central area is more exhausted than the outer periphery area. do. For this reason, since the difference in the amount of reaction moisture between the central region and the outer circumferential region of the wafer W is reduced, it becomes possible to reduce the dimensional difference of the resist pattern in one wafer W. In addition, even when the chamber heater 44 is not provided in the chamber 41, it is effective in reducing the difference in the amount of reacted moisture by adding at least the central exhaust gas in the middle.

[Fourth Embodiment]

Next, a substrate processing system according to a fourth embodiment will be described with reference to FIGS. 13 and 14. In the substrate processing system according to the fourth embodiment, the heat treatment unit U8 has a gas discharge port 53 (a second gas discharge part), and the heat treatment unit U8 is instead of the gas supply mechanism 60 It differs from the first embodiment in that the gas supply mechanism 69 is provided.

The gas discharge port 53 discharges a moisture-containing gas from above toward the wafer W on the hot plate 21 in the central region of the processing space S. The gas discharge port 53 may be provided corresponding to the center of the hot plate 21 (the wafer W on the hot plate 21). For example, the gas discharge port 53 may be constituted by one discharge hole (discharge pipe) provided at a position corresponding to the center of the hot plate 21. The gas discharge port 53 may penetrate the top plate 43a of the upper chamber 43 including the gas discharge part 50 (first gas discharge part) in the vertical direction.

The gas supply mechanism 69 includes, for example, a gas supply path 54, a gas switching unit 55, a gas supply path 61, a gas supply source 63, and a flow rate switching unit 66. do. The gas switching unit 55 is connected to the gas discharge port 53 via the gas supply path 54 and is connected to the gas discharge unit 50 via the gas supply path 61. A gas supply source 63 is connected to the gas switching unit 55. The gas switching unit 55 controls a global discharge state in which the water-containing gas is discharged from the gas discharge unit 50 at a first flow rate, and a central discharge state in which the water-containing gas is discharged from the gas discharge port 53 at a second flow rate. Switch. The gas switching unit 55 may be constituted by, for example, a switching valve. Further, the second flow rate is set to be about the same as the first flow rate or to be larger than the first flow rate.

14 shows an example of a heat treatment procedure performed in the substrate processing system according to the fourth embodiment. This heat treatment sequence is different from the heat treatment sequence according to the first embodiment in that after the lapse of the first predetermined time, the entire discharge state is switched to the central discharge state. This heat treatment procedure is started in a state in which exhaust from the outer periphery (outer periphery exhaust) passing through the plurality of exhaust holes 71 is performed.

The control device 100 first executes steps S91 to S95. Steps S91 to S95 are respectively executed in the same manner as steps S31 to S35, and thus a description thereof will be omitted. In step S95, after the lapse of the first predetermined time, the control device 100 executes step S96. In step S96, for example, the control device 100 controls the gas switching unit 55 and the flow rate switching unit 66 so as to switch from the global discharge state to the central discharge state. Accordingly, in the chamber 41, from the state in which the water-containing gas is discharged at the first flow rate by the gas discharge part 50, the discharge by the gas discharge part 50 is stopped, and the gas discharge port 53 As a result, it is switched to a state in which the water-containing gas is discharged at the second flow rate.

Subsequently, the control device 100 waits for a second predetermined time by executing step S97. Thereby, after the lapse of the first predetermined time, the water-containing gas is discharged from the gas discharge port 53 at the second predetermined time at the second flow rate. The second predetermined time may be set to the same length as the first predetermined time. After the second predetermined time has elapsed, the control device 100 executes steps S98 to S100. Steps S98 to S100 are respectively executed in the same manner as steps S38, S40, and S41, so their description is omitted. Subsequently, the control device 100 executes step S101. In step S101, for example, the control device 100 controls the gas switching unit 55 and the flow rate switching unit 66 to switch from the central discharge state to the global discharge state. That is, the control device 100 stops the discharge of gas from the gas discharge port 53 and resumes the discharge of the gas from the gas discharge part 50.

Thus, the heat treatment for one wafer W is ended. After that, the control device 100 returns the process to step S92. Thereafter, the heat treatment on the wafer W is repeated. In addition, when this illustrated heat treatment procedure is executed, the gas switching control unit 116 of the control device 100 may execute the processing of steps S96 and S101. The heat treatment unit U8 may be provided with different gas supply sources respectively supplied to the gas discharge unit 50 and the gas discharge port 53. In this case, after the lapse of the first predetermined time, the control device 100 may perform control so as to discharge from the gas discharge port 53 in addition to the discharge from the gas discharge unit 50. That is, in the central discharge state, gas may be discharged from both of the gas discharge unit 50 and the gas discharge port 53.

Also in the coating/developing apparatus 2 according to the fourth embodiment, since the temperature of the chamber 41 is increased by the chamber heater 44, it is effective in suppressing metal contamination and uniformity of the resist pattern.

When exhaust is performed from the outer periphery of the processing space S, there is a concern that the amount of reacted moisture in the central region of the wafer W increases as compared to the outer periphery of the wafer W as the heat treatment proceeds. . In the coating/development device 2 according to the fourth embodiment, during heat treatment, the entire discharge state is switched to the central discharge state, and after the change, the moisture skewed to the central region is transferred to the gas from the gas discharge port 53. It moves to the outer periphery area by the discharge of. For this reason, since the difference in the amount of reaction moisture between the central region and the outer circumferential region of the wafer W is reduced, it becomes possible to reduce the dimensional difference of the resist pattern in one wafer W. In addition, even when the chamber heater 44 is not provided in the chamber 41, it is effective in reducing the difference in the amount of reacted moisture by adding at least the central exhaust gas in the middle.

In addition, the substrate to be processed is not limited to a semiconductor wafer, and may be, for example, a glass substrate, a mask substrate, or a flat panel display (FPD).

In addition, the following configurations are included in the first to fourth embodiments described above.

(Annex 1)

A heat treatment unit for thermally treating a substrate on which a film of a metal-containing resist is formed and the film has been subjected to exposure treatment;

And a developing processing unit for developing the heat-treated film,

The heat treatment unit,

A hot plate supporting and heating the substrate,

A chamber covering the processing space on the hot plate,

In the chamber, a gas discharge portion for discharging a gas containing moisture from above toward the substrate on the hot plate,

A substrate processing apparatus having an exhaust portion for exhausting the inside of the chamber from an outer periphery of the processing space.

(Annex 2)

The substrate processing apparatus according to Appendix 1, wherein the heat treatment unit further has a humidity control unit that adjusts the humidity of the gas discharged from the gas discharge unit.

(Annex 3)

A first state in which a first gas containing moisture is discharged from the gas discharge unit, and a second gas that is difficult to react with a metal sublimation from the film compared to the first gas from the gas discharge unit is discharged. A gas switching unit for switching two states,

The substrate processing apparatus according to Appendix 1 or 2, further comprising a switching control unit for controlling the gas switching unit so as to switch from the first state to the second state during the heat treatment.

(Annex 4)

A flow rate switching unit for switching between a first state in which gas is discharged from the gas discharge unit at a first flow rate and a second state in which gas is discharged from the gas discharge unit at a second flow rate greater than the first flow rate,

The substrate processing apparatus according to Appendix 1 or 2, further comprising a switching control unit for controlling the flow rate switching unit so as to switch from the first state to the second state during the heat treatment.

(Annex 5)

In the first state, the flow rate switching unit discharges a first gas containing moisture from the gas discharge unit at the first flow rate, and in the second state, a second gas having a lower humidity than the first gas The substrate processing apparatus according to Appendix 4, wherein the gas is discharged from the gas discharge unit at the second flow rate.

(Annex 6)

The heat treatment unit,

An elevating portion for elevating the substrate on the hot plate,

The substrate processing apparatus according to any one of Supplementary Notes 1 to 5, further comprising a lower gas discharge portion that discharges gas from the upper surface of the hot plate upward.

(Annex 7)

After the end of the heat treatment, an elevation control unit for controlling the elevation unit to raise the substrate,

A substrate processing apparatus further comprising a discharge control unit for controlling the lower gas discharge unit to discharge gas from an upper surface of the hot plate while the substrate on the hot plate is raised.

(Annex 8)

A heat treatment unit for thermally treating a substrate on which a film of a metal-containing resist is formed and the film has been subjected to exposure treatment;

A developing processing unit that develops the heat-treated film,

It has an exhaust control unit,

The heat treatment unit,

A hot plate supporting and heating the substrate,

A chamber covering the processing space on the hot plate,

In the chamber, a gas discharge portion for discharging a gas containing moisture from above toward the substrate on the hot plate,

An exhaust unit including an outer circumferential exhaust unit for exhausting the interior of the chamber from an outer periphery of the processing space, and a central exhaust unit for exhausting the interior of the chamber from a central region of the processing space;

An exhaust switching unit for switching between a first state in which the interior of the chamber is exhausted from the outer circumferential exhaust unit and a second state in which the interior of the chamber is exhausted from at least the central exhaust unit,

The exhaust control unit controls the exhaust switching unit to be switched from the first state to the second state during the heat treatment.

(Annex 9)

A heat treatment unit for thermally treating a substrate on which a film of a metal-containing resist is formed and the film has been subjected to exposure treatment;

A developing processing unit that develops the heat-treated film,

It has a switching control unit,

The heat treatment unit,

A hot plate supporting and heating the substrate,

A chamber covering the processing space on the hot plate,

A first comprising a plurality of discharge holes scattered along a surface of the hot plate facing the substrate, and in the chamber, discharges a gas containing moisture from each of the plurality of discharge holes toward the substrate on the hot plate A gas discharge unit,

A second gas discharge portion provided corresponding to the central region of the substrate on the hot plate and for discharging a gas containing moisture from above toward the substrate on the hot plate;

A gas switching unit for switching between a first state in which gas is discharged from the first gas discharge unit and a second state in which gas is discharged from at least the second gas discharge unit,

The switching control unit controls the gas switching unit to be switched from the first state to the second state during the heat treatment.

Claims (12)

And a heat treatment unit for thermally treating a substrate on which a film of a metal-containing resist is formed, and subjected to exposure treatment to the film
The heat treatment unit,
A hot plate supporting and heating the substrate,
A chamber covering the processing space on the hot plate,
In the chamber, a gas discharge portion for discharging a gas containing moisture from above toward the substrate on the hot plate,
An exhaust part for exhausting the inside of the chamber from an outer periphery of the processing space,
A substrate processing apparatus provided in the chamber and having a heater for heating the chamber. The method of claim 1,
The heat treatment unit further has a humidity control unit that adjusts the humidity of the gas discharged from the gas discharge unit. The method of claim 1,
The gas discharge unit includes a plurality of discharge holes interspersed along a surface of the hot plate facing the substrate. The method of claim 1,
During the heat treatment, the substrate processing apparatus further includes a heater control unit that controls the heater so that the temperature of the chamber substantially matches the temperature of the hot plate. The method according to any one of claims 1 to 4,
A first state in which a first gas containing moisture is discharged from the gas discharge unit, and a second gas that is difficult to react with a metal sublimation from the film compared to the first gas from the gas discharge unit is discharged. A gas switching unit for switching two states,
During the heat treatment, the substrate processing apparatus further includes a switching control unit for controlling the gas switching unit to be switched from the first state to the second state. The method according to any one of claims 1 to 4,
A flow rate switching unit for switching between a first state in which gas is discharged from the gas discharge unit at a first flow rate and a second state in which gas is discharged from the gas discharge unit at a second flow rate greater than the first flow rate,
During the heat treatment, the substrate processing apparatus further includes a switching control unit for controlling the flow rate switching unit to be switched from the first state to the second state. The method of claim 6,
In the first state, the flow rate switching unit discharges a first gas containing moisture from the gas discharge unit at the first flow rate, and in the second state, a second gas having a lower humidity than the first gas The substrate processing apparatus in which the gas is discharged from the gas discharge unit at the second flow rate. The method according to any one of claims 1 to 4,
The heat treatment unit,
An elevating portion for elevating the substrate on the hot plate,
The substrate processing apparatus, further comprising a lower gas discharge portion for discharging gas upward from the upper surface of the hot plate. The method of claim 8,
After the end of the heat treatment, an elevation control unit for controlling the elevation unit to raise the substrate,
A substrate processing apparatus further comprising a discharge control unit for controlling the lower gas discharge unit to discharge gas from an upper surface of the hot plate while the substrate on the hot plate is raised. The method according to any one of claims 1 to 4,
A substrate processing apparatus, wherein a rectifying portion is formed in an outer peripheral portion of the processing space, wherein the distance between the upper surface and the lower surface becomes smaller as it goes outward. The method of claim 10,
The exhaust portion is opened on an upper surface of the processing space outside the rectifying portion. Forming a film of a metal-containing resist on the substrate,
Thermally treating a substrate on which the film is formed and on which the exposure treatment has been applied,
Including developing the film subjected to the heat treatment,
The heat treatment,
Heating the substrate by supporting the substrate on a hot plate,
Discharging a gas containing moisture from above toward the substrate in a chamber covering the processing space on the hot plate;
Exhausting the inside of the chamber from the outer periphery of the processing space,
And heating the chamber by a heater provided in the chamber.

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