JP3631131B2 - Silylation treatment apparatus and silylation treatment method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a silylation processing apparatus and a silylation processing method for silylating a substrate surface such as a semiconductor wafer or an LCD substrate.
[0002]
[Prior art]
In the manufacture of microelectronic devices such as semiconductor integrated circuits, as the patterns processed on silicon wafers become smaller, the lithography technology used for processing and the performance required for resist materials become increasingly severe. It is coming.
[0003]
With regard to lithography technology used for device fabrication, the wavelength of a light source used for pattern exposure has also been shortened, and i-line and KrF excimer laser light has been used.
[0004]
For i-line, lithography has been carried out using a photosensitizer having a novolac resist as a base resin. However, when using ArF excimer laser light by further shortening the wavelength, novolak resists absorb a large amount of light, so that miniaturization cannot be realized. Therefore, resists using phenolic cyclic compounds have been proposed. Such a phenolic resist has the advantage of improving plasma resistance, but when using a phenolic resist, the light absorption rate is very high, and the shorter the wavelength, the stronger the tendency. . In particular, when ArF excimer laser light is used, the light does not reach a sufficient depth.
[0005]
Therefore, the silylation method is in the spotlight as a technique that has a sufficient photosensitive action and improves plasma resistance even when a light source having a short wavelength such as ArF excimer laser light is used. In this silylation method, the photosensitive agent is exposed to a predetermined pattern image, and then the surface of the exposed photosensitive agent is silylated, and dry development is performed using the silylated photosensitive agent as a mask, thereby providing sufficient selectivity. A resist pattern having the same can be formed.
[0006]
[Problems to be solved by the invention]
By the way, according to the conventional silylation treatment method, there are problems to be solved as described below.
[0007]
The silylation reaction that realizes this silylation method has a very high temperature dependency, and if the temperature is non-uniform in the plane of the wafer, the silylation reaction also proceeds non-uniformly in the plane of the wafer. Therefore, in order to use the silylation method, it is necessary to obtain uniformity of the silylated layer. Conventionally, in order to solve this problem, various hardware configurations such as a processing chamber structure, a silylation atmosphere supply method, and a hot plate accuracy have been devised. However, even if the uniformity of the silylated layer is obtained by such a device, since the process conditions depend on the hardware surface, a slight defect in the hardware configuration prevents the formation of the uniform silylated layer. End up.
[0008]
The present invention has been made in order to solve the above-mentioned problems, and an object of the present invention is to provide a silylation apparatus and a silylation treatment method capable of obtaining a uniform silylation layer regardless of a hardware configuration. There is to do.
[0009]
[Means for Solving the Problems]
According to a first aspect of the present invention, a heating mechanism provided in the chamber for heating the substrate, a supply mechanism for supplying a vapor containing a silylating agent into the chamber, and holding the substrate in the chamber In addition, there is provided a substrate holding jig that can adjust the distance between the heating mechanism and the substrate in at least three stages.
[0010]
According to such a configuration, the substrate is received in a state where it is farthest from the heating mechanism and hardly affected by the heat in the chamber, and the temperature in the chamber is reduced by reducing the distance from the heating mechanism. It waits until the in-plane uniformity is maintained, and after the in-plane uniformity is obtained, it can be brought closer to the heating mechanism to cause the silylation reaction. As described above, the silylation in the atmosphere of the non-uniform silylating agent does not occur by maintaining the distance between the substrates at a predetermined distance from the heating mechanism until the heating by the heating mechanism becomes uniform. Therefore, a uniform silylated layer can be obtained regardless of the hardware configuration.
[0011]
According to the second aspect of the present invention, the step of carrying the substrate into the chamber and installing it at a predetermined distance from the heating mechanism provided in the chamber, and the silylating agent in the chamber A step of introducing a vapor containing the chamber to fill the chamber with a silylating agent atmosphere; a step of raising the temperature of the chamber by the heating mechanism; and bringing the substrate closer to the heating mechanism to silylate the substrate A step of uniformly diffusing the silylation atmosphere in the chamber at a temperature at which no reaction occurs, and a step of bringing the substrate closer to the heating mechanism to raise the temperature of the substrate and causing a silylation reaction on the substrate surface The silylation processing method characterized by including these is provided.
[0012]
According to this method, it is desirable that the distance between the heating mechanism and the substrate is set to change in at least three stages. Further, in the step of causing the silylation reaction, it is desirable that the substrate is substantially in contact with the heating mechanism.
[0013]
Further, after the silylation treatment, the silylation treatment can be completed easily by replacing the vapor of the silylating agent and introducing an inert gas into the chamber. In addition, an extra and non-uniform silylation reaction can be prevented by replacing the gas in the chamber after the gap between the heating mechanism and the substrate is separated.
[0014]
In addition, when the heating mechanism and the substrate are installed at a predetermined interval, when the atmosphere is filled with the silylating agent, the amount of gas existing in the chamber is reduced by reducing the pressure in the chamber. The gas flow inside becomes stable and the uniformity of the concentration of the silylating agent is further improved.
[0015]
In addition, by stopping the introduction of the silylating agent into the chamber and causing the silylation reaction without exhausting the chamber, the gas flow in the chamber is eliminated and the silylation atmosphere is kept uniform. Since the silylation reaction can be caused while being held, the in-plane uniformity of the silylation reaction on the wafer is further increased.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
[0017]
(First embodiment)
In the present embodiment, a case where the silylation processing apparatus of the present invention is used in a resist processing system for a semiconductor wafer will be described.
[0018]
1 and 2 show the structure of the silylation processing apparatus. FIG. 1 is a top view and FIG. 2 is a longitudinal sectional view.
[0019]
As shown in FIG. 1, the silylation processing apparatus 1 has a base block 2. The base block 2 has a concave shape, and includes a base block side portion 2a that defines the side portion and a base block bottom portion 2b that defines the bottom portion. Further, a horizontal shielding plate 3 is attached horizontally to the base block bottom 2b at a predetermined height of the base block side 2a. A circular opening 4 is formed in the horizontal shielding plate 3, and a hot plate 5 is accommodated in the opening 4 as a heating mechanism. The hot plate 5 is supported on the horizontal shielding plate 3 by a support plate 6.
[0020]
A processing chamber 7 as a chamber for performing silylation processing is defined by the base block side portion 2 a, the horizontal shielding plate 3, and the cover 8. Openings 7A and 7B are respectively formed on the front side and the back side of the processing chamber 7, and the wafer W is carried into and out of the processing chamber 7 through the openings 7A and 7B.
[0021]
Three holes 9 are formed through the hot plate 3, and lift pins 10 are inserted into the holes 9 as wafer W holding jigs. The three lift pins 10 are connected and supported by an arm 11, and the arm 11 is connected and supported by a rod 12a of a vertical cylinder 12, for example. When the rod 12 a protrudes from the vertical cylinder 12, the lift pins 10 protrude to lift the wafer W from the hot plate 5.
[0022]
The height of the lift pins 10 that support the wafer W at three points can be adjusted to, for example, three levels of low, medium, and high (hereinafter, each height is referred to as a low level, a medium level, and a high level). When the level is low, the lift pins 10 do not protrude from the surface of the hot plate 5. Therefore, although the distance between the wafer W held by the lift pins 10 and the surface of the hot plate 5 is theoretically 0 mm, the proximity in the actual apparatus configuration is, for example, about 0.1 μm. In the middle level, the lift pins 10 protrude from the surface of the hot plate 5 by, for example, 7 mm. Further, at a high level, the lift pins 10 protrude from the surface of the hot plate 5 by, for example, 18 mm. At this high level, the wafer W is transferred from another processing mechanism by a transfer mechanism (not shown).
[0023]
As shown in FIG. 2, a ring-shaped shutter 13 is attached to the outer periphery of the hot plate 5. The shutter 13 is supported by a rod 16a of a vertical cylinder 16 through an arm 15 so as to be movable up and down. The shutter 13 is retracted to a low position during non-processing, but rises during processing and is positioned between the hot plate 5 and the cover 8. A ring-shaped supply ring 14 is disposed on the inner periphery of the shutter 13 so as to surround the hot plate 5.
[0024]
A detailed perspective configuration of the supply ring 14 is shown in FIG. As shown in FIG. 3, the supply ring 14 has an annular ring member 14b. A large number of supply holes 14a are formed along the inner circumference of the ring member 14b at a pitch interval of, for example, a central angle of 2 °. Four supply passages 14c are opened at the bottom surface of the ring member 14b and symmetrical with respect to the center of the ring member 14b. The supply passage 14c communicates with a silylating agent supply source (not shown) outside the base block 2 through an opening provided in the base block bottom 2b.
[0025]
An exhaust hole 18 communicating with the exhaust pipe 17 is opened at the center of the cover 8. A gas generated during heat treatment or the like is exhausted through the exhaust hole 18. The exhaust pipe 17 communicates with a duct 19 (or 20) on the front side of the apparatus or another duct (not shown).
[0026]
A machine room 21 is provided below the horizontal shielding plate 3. The machine room 21 is defined by the side wall of the duct 19, the side wall 22, and the base block bottom 2b. The machine room 21 is provided with, for example, a hot plate support plate 6, a shutter arm 15, a lift pin arm 11, an elevating cylinder 16, and an elevating cylinder 12.
[0027]
As shown in FIG. 1, for example, four protrusions 23 are provided on the upper surface of the hot plate 5, and the wafer W is positioned by these four protrusions. A plurality of small protrusions (not shown) are provided on the upper surface of the hot plate 5, and when the wafer W is placed on the hot plate 5, the tops of these small protrusions come into contact with the wafer W. Yes. As a result, a minute gap (about 0.1 mm) is formed between the wafer W and the hot plate 5 so that the lower surface of the wafer W is not soiled or damaged.
[0028]
Next, the control system and silylating agent vapor supply mechanism of the silylation processing apparatus will be described with reference to FIG.
[0029]
As shown in FIG. 4, each supply passage 14 c communicates with a silylating agent vapor introducing pipe 31, and this silylating agent vapor introducing pipe 31 converts the silylating agent vapor generated in the bubbler tank 32 into the processing chamber 7. To introduce. The silylating agent vapor introducing pipe 31 is provided with a mass flow controller 33 for controlling the flow rate of the silylating agent vapor introduced into the processing chamber 7 based on a control command from the controller 34.
[0030]
A bubbling member 35 made of, for example, porous ceramic is provided on the bottom surface of the bubbler tank 32, and the bubbling member 35 has N ₂ A gas introduction pipe 36 for introducing an inert gas such as is inserted. From the upper surface of the bubbler tank 32, for example, N as a carrier gas from a carrier gas introduction pipe 37 ₂ Is introduced, and the silylating agent 38 stored in the tank 32 is introduced into the bubbling member 35 through an inert gas through the gas introduction pipe 36 to generate a silylating agent vapor while bubbling. ₂ Is introduced into the processing chamber 7 as a carrier gas.
[0031]
The hot plate 5 includes a resistance heater (not shown) and a temperature sensor 41, and outputs the detected temperature of the hot plate 5 to the controller 34. The controller 34 controls the temperature of the hot plate 5 using a resistance heater based on the detected temperature of the hot plate 5. For example, a hot plate may be used as a jacket having a hollow portion, and a heating medium may be circulated and supplied to the hollow portion to heat the wafer W.
[0032]
For example, a mass flow controller 42 is provided in the exhaust pipe 17, and the exhaust flow rate is controlled by the controller 34.
[0033]
For example, a pressure sensor 43 is attached in the processing chamber 7, and the pressure in the processing chamber 7 detected by the pressure sensor 43 is output to the controller 34. The controller 34 controls the mass flow controllers 33 and 42 based on the detected pressure in the processing chamber 7. Thereby, the flow rates of the silylating agent vapor introduced into the processing chamber 7 and the exhaust gas exhausted from the processing chamber 7 are controlled.
[0034]
The bubbler tank 32 is not limited to the above-described configuration. For example, without using the bubbling member 35 for bubbling, a large number of holes are formed in the introduction pipe 36 and gas is introduced from the holes. Bubbling may be performed. In this case, it is desirable to provide a check valve in the introduction pipe 36 in order to prevent the back flow of the silylating agent 38 during the period when the gas is not introduced.
[0035]
This silylation processing apparatus is applied to the coating and developing processing system shown in FIGS.
[0036]
As shown in FIG. 5, the coating and developing processing system includes a load / unload unit 62 for sequentially taking out wafers W from a cassette CR containing wafers W, and a wafer W taken out by the load / unload unit 62. A process processing unit 63 that performs resist solution coating and development process processing, and an interface unit 64 that transfers the wafer W coated with the resist solution to an exposure apparatus (not shown). The load / unload unit 62 includes a mounting table 65 in which a cassette CR storing, for example, 25 wafers of semiconductor wafers W is taken in and out.
[0037]
In the load / unload unit 62, as shown in FIG. 5, a plurality of, for example, up to four cassettes CR are provided at the position of the positioning projection 65a on the mounting table 65, and each wafer inlet / outlet is connected to the process processor 63 side. A first sub-arm mechanism that is mounted in a row in the X direction toward the head and is movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction; vertical direction) of the wafer W accommodated in the cassette CR. 66 selectively accesses each cassette CR.
[0038]
Further, the first sub arm mechanism 66 is configured to be rotatable in the θ direction, and can transfer the wafer W to a main arm mechanism 67 provided in the process processing unit 63. Further, as will be described later, the alignment unit (ALIM) and the extension unit (EXT) belonging to the multistage unit section of the third processing unit group G3 on the process processing section 63 side can also be accessed.
[0039]
The transfer of the wafer W between the load / unload unit 62 and the process processing unit 63 is performed via the third unit group G3. The third processing unit group G3 is configured by stacking a plurality of process processing units vertically as shown in FIG. That is, the processing unit group G3 includes a cooling unit (COL) that cools the wafer W, an adhesion unit (AD) that performs hydrophobic treatment for improving the fixability of the resist solution to the wafer W, and a silyl group for the wafer W. Silylation processing apparatus (SLL) that performs silylation treatment, dry development unit (DDEV) that performs dry development on wafer W that has undergone silylation treatment, alignment unit (ALIM) that aligns wafer W, wafer W An extension unit (EXT) for keeping the camera in standby, two pre-baking units (PREBAKE) for performing heat treatment before exposure processing, a post-baking unit (POBAKE) for performing heat treatment after exposure processing, and a post-exposure baking unit (PEBAKE) from bottom to top Stacked and are configured.
[0040]
The wafer W is transferred to the main arm mechanism 67 through the extension unit (EXT) and the alignment unit (ALIM).
[0041]
Further, as shown in FIG. 5, around the main arm mechanism 67, the first to fifth processing unit groups G1 to G5 including the third processing unit group G3 surround the main arm mechanism 67. Is provided. Similar to the third processing unit group G3 described above, the other processing unit groups G1, G2, G4, and G5 are configured by stacking various processing units in the vertical direction. The silylation processing apparatus (SLL) of the present invention is provided in the third and fourth processing unit groups G3 and G4.
[0042]
On the other hand, as shown in FIG. 7, the main arm mechanism 67 is equipped with a main arm 68 which can be moved up and down in the vertical direction (Z direction) inside a cylindrical guide 69 extending in the vertical direction. . The cylindrical guide 69 is connected to a rotating shaft of a motor (not shown), and is rotated integrally with the main arm 68 around the rotating shaft by the rotational driving force of the motor. It is freely rotatable in the θ direction. In addition, you may comprise the cylindrical guide 69 so that it may connect with another rotating shaft (not shown) rotated by the said motor. As described above, by driving the main arm 68 in the vertical direction, the wafer W can be arbitrarily accessed to each processing unit of the processing unit groups G1 to G5.
[0043]
When the main arm mechanism 67 receives the wafer W from the load / unload unit 62 via the extension unit (EXT) of the third processing unit group G3, the wafer W is first added to the third processing unit group G3. It is carried into the fusion unit (AD) and hydrophobized. Next, the wafer W is unloaded from the adhesion unit (AD) and cooled by the cooling unit (COL).
[0044]
The cooled wafer W is positioned and opposed to the resist solution coating apparatus (COT) of the first processing unit group G1 (or the second processing unit group G2) by the main arm mechanism 67.
[0045]
The wafer W coated with the resist solution is unloaded by the main arm mechanism 67 and transferred to the interface unit 64 via the fourth processing unit group G4.
[0046]
As shown in FIG. 6, the fourth processing unit group G4 includes a cooling unit (COL), an extension / cooling unit (EXT / COL), an extension unit (EXT), a cooling unit (COL), a silylation processing device ( SLL), a dry development unit (DDEV), two baking units (PREBAKE), and two post baking units (POBAKE) are sequentially stacked from the bottom to the top.
[0047]
The wafer W taken out from the resist solution coating unit (COT) is first inserted into a pre-baking unit (PREBAKE), and dried by removing a solvent from the resist solution. In addition, this drying may be based on the decompression method, for example. That is, a method of removing the solvent (drying the resist solution) by inserting the wafer W into a pre-baking unit (PREBAKE) or a chamber provided separately and reducing the pressure around the wafer W may be used.
[0048]
Next, the wafer W is cooled by a cooling unit (COL), and then transferred to a second sub arm mechanism 70 provided in the interface unit 64 via an extension unit (EXT).
[0049]
The second sub arm mechanism 70 that has received the wafer W sequentially stores the received wafer W in the buffer cassette BUCR. The interface unit 64 delivers the wafer W to an exposure apparatus (not shown) and receives the wafer W after the exposure process.
[0050]
On the wafer W after the exposure processing, the unnecessary resist film on the wafer peripheral portion is removed by a peripheral exposure apparatus (WEE), and then the main arm mechanism 67 via the fourth processing unit group G4 contrary to the above. The main arm mechanism 67 transports the exposed wafer W to a silylation processing apparatus (SLL). The wafer W that has been subjected to the silylation treatment by the silylation treatment apparatus (SLL) is transferred to a dry development unit (DDEV) and subjected to dry development. Thereafter, the sheet is discharged to the load / unload unit 62 via the extension unit (EXT).
[0051]
The fifth processing unit group G5 is selectively provided. In this example, the fifth processing unit group G5 is configured in the same manner as the fourth processing unit group G4. Further, the fifth processing unit group G5 is movably held by the rail 71, so that the maintenance process for the main arm mechanism 67 and the first to fourth processing unit groups G1 to G4 can be easily performed. ing.
[0052]
When the silylation processing apparatus of the present invention is applied to the coating and developing unit shown in FIGS. 5 to 7, each processing unit is configured to be stacked up and down so that the installation area of the apparatus can be significantly reduced.
[0053]
Of course, the silylation processing apparatus shown in this embodiment can be applied to apparatuses other than such a coating and developing unit. In addition, various modifications can be made without departing from the scope of the present invention.
[0054]
Next, the silylation process by this coating and developing system will be described with reference to the process cross-sectional view of FIG. 8 and the flowchart of FIG.
[0055]
When the main switch of the coating and developing treatment system is turned on, power supply from each power source to the silylation treatment apparatus 1 is started.
[0056]
Then, the shutter 13 is opened, the wafer W is placed on an arm holder (not shown) that holds the main arm of the main arm mechanism 67, and is inserted into the processing chamber 7. When the wafer W is carried in, the lift pins 10 are raised about 18 mm with respect to the hot plate 5 (S1), the wafer W is transferred from the arm holder to the lift pins 10, and the arm holder is retracted from the processing chamber 7 (FIG. 8 (a), S2). Since the temperature in the processing chamber 7 at the time of loading the wafer W is a normal temperature, the silylation reaction on the surface of the wafer W does not naturally occur at this stage.
[0057]
After the wafer W is carried into a position separated from the hot plate 5 by about 18 mm, the shutter 13 is lifted to evacuate the atmosphere from the exhaust hole 17 with the inside of the processing chamber 7 sealed, and the inside of the processing chamber 7 is decompressed. (S3). Then, when the pressure falls to a predetermined pressure, for example, 80 Pascal, the silylating agent vapor is introduced from the supply hole 14a (S4). The temperature of the silylating agent vapor at this time is preferably set to a temperature similar to that of the wafer W, for example, about 40 to 50 ° C., in order to prevent the reaction from proceeding unexpectedly.
[0058]
When the silylating agent vapor fills the processing chamber 7, the hot plate 5 is heated (S5). Then, the lift pins 10 are lowered to set the distance between the wafer W and the hot plate 5 to about 7 mm (S6). Needless to say, the lift pin 10 may be first lowered and then heated by the hot plate 5. Here, since the wafer W is separated from the hot plate 5, the wafer W is kept at a lower temperature than the surface of the hot plate 5. Specifically, the temperature of the wafer W is kept at about 40 to 50 ° C. in order to keep the temperature such that no silylation reaction occurs on the surface of the wafer W (FIG. 8B). Furthermore, it waits under this temperature condition until silylation agent vapor | steam spread | diffuses uniformly in the process chamber 7 (S7). If the silylating agent vapor is diffused uniformly, the temperature becomes uniform in the plane of the wafer W.
[0059]
Then, the introduction of the silylating agent vapor is stopped, the exhaust of the gas from the exhaust pipe 17 is stopped, all the gas flows into the processing chamber 7 are stopped, and the processing chamber 7 is kept at a constant pressure and sealed. In a state where the temperature in the processing chamber 7 is made uniform in the plane of the wafer W, the hot plate 5 is further heated (S8).
[0060]
When the temperature of the hot plate 5 itself becomes, for example, about 80 to 90 ° C., the lift pins 10 are further lowered so that the distance between the wafer W and the hot plate 5 is about 0.1 mm (FIG. 8C). S9). At this time, since the wafer W is heated to about 80 to 90 ° C., the wafer W also rises to 80 to 90 ° C., and silylation proceeds on the surface (S10). At the time of this silylation, the introduction of gas into the processing chamber 7 and the exhaust of the gas from the processing chamber 7 are stopped and sealed, and the in-plane uniformity of the temperature in the processing chamber 7 is maintained. Also proceeds uniformly in the plane of the wafer W.
[0061]
When the silylation is completed, in order to terminate the silylation reaction, N is introduced into the processing chamber 7 from a gas inlet (not shown). ₂ While introducing gas, the gas containing silylating agent vapor | steam is exhausted from the exhaust hole 17, and the gas in the processing chamber 7 is N from silylating agent vapor | steam. ₂ The gas is replaced (S11). Since the silylation reaction takes several seconds, the silylation reaction is immediately completed by replacing the gas in the processing chamber 7. Note that since the silylation reaction proceeds even slightly during the gas replacement and until the temperature of the wafer W surface is lowered to about 50 ° C., the temperature of the wafer W surface must be kept uniform. There is. Therefore, it is desirable to raise the lift pins 10 to make the distance between the wafer W and the hot plate 5 larger than 7 mm before the gas replacement. N introduced ₂ It is desirable that the gas be a gas having a temperature lower than about 50 ° C. which is a critical temperature at which the silylation reaction occurs. It should be noted that the gas replacement may be performed without raising the lift pin 10 and with a distance of 0 mm from the hot plate 5.
[0062]
According to the process described above, the following effects can be obtained.
[0063]
First, after introducing the silylating agent vapor, the temperature of the wafer W is changed to a silylation reaction by waiting at a predetermined interval from the hot plate 5 until the silylating vapor is uniformly diffused in the processing chamber 7. Can be made to stand by at a temperature of 50 ° C. or less, and the concentration in the processing chamber 7 can be made uniform during this waiting time. The silylation reaction is temperature-dependent, and the higher the temperature, the faster the silylation rate. By maintaining a uniform temperature in the plane of the wafer W in this way, the silylation with high in-plane uniformity of the wafer W is achieved. Processing can be performed.
[0064]
Secondly, by setting the interval between the hot plate 5 and the wafer W in three stages, the temperature of the wafer W is influenced by a transient temperature change until the temperature reaches a high temperature at which the silylation reaction proceeds. And stable silylation treatment can be performed. That is, while the temperature of the wafer W rises from 23 ° C. to 80 ° C., the temperature variation of the wafer W is very large, but the temperature variation from 50 ° C. to about 80 ° C. to 90 ° C. is relatively small. Therefore, silylation treatment with little temperature variation is possible. Further, only by performing processing with the interval between the hot plate 5 and the wafer W set in a plurality of stages as described above, sufficiently stable silylation processing can be easily performed even if there is a slight problem in the hardware configuration. be able to. For example, when the silylating agent is supplied from the upper part of the chamber using a shower or the like, strict accuracy is required for the shape of the outlet of the silylating agent. Stable silylation can be performed regardless of the configuration.
[0065]
Thirdly, during the silylation process, since the process chamber 7 is a sealed space where neither decompression nor exhaust is performed, variation in concentration can be suppressed to a minimum.
[0066]
Fourth, the wafer W may be lifted up after the vapor of the silylating agent is completely exhausted. This method can also prevent the reaction from inadvertently proceeding on the surface of the wafer W.
[0067]
Fifth, after the silylation treatment, the silylating agent vapor is N ₂ When replacing with gas, the wafer W is once separated from the hot plate 5 by a predetermined interval, so that the gas can be replaced after the wafer W is already at a temperature at which silylation is difficult to proceed. A heterogeneous silylation reaction can be prevented.
[0068]
Sixth, when introducing and homogenizing the silylating agent vapor, the amount of gas present in the processing chamber 7 is reduced by reducing the pressure once, so that the concentration of the silylating agent is uniform. improves.
[0069]
In addition, the silylation processing apparatus which concerns on this invention is applicable besides the structure in this embodiment.
[0070]
First, the silylating agent vapor introduction system is not limited to the configuration shown in FIG. For example, one or a plurality of holes may be provided in the hot plate 5 and the silylating agent vapor may be introduced to the surface side of the hot plate 5 through the holes. And may be introduced from the introduction port toward the processing chamber 7, and the configuration of the introduction system may be anything.
[0071]
Secondly, the lift pins 10 that hold the wafer W with respect to the hot plate 5 at a predetermined interval may move in a plurality of stages as well as in three stages of high level, medium level, and low level. Furthermore, it may move continuously from a high level to a medium level or from a medium level to a low level.
[0072]
An example of a form in which the hot plate 5 is held and used at four or more positions is shown in FIG. FIG. 10 shows a case where the wafer W is changed in five stages. A high level at which the wafer W is carried in (the interval between the hot plate 5 and the wafer W is 18 mm, for example), and a low level at which the inside of the processing chamber 7 is sealed to promote the silylation process (the interval between the hot plate 5 and the wafer W is 0 mm). ) Is the same as in the case of three stages (S1 to S7, S8 to S11), and the hot plate 5 is moved down in stages in a plurality of stages when the temperature variation in the processing chamber 7 is made uniform.
[0073]
In this case, first, the wafer W is temporarily held at a position lower than the high level until the temperature of the wafer W rises to a predetermined temperature (for example, 50 ° C.) (the distance between the hot plate 5 and the wafer W is, for example, 7 mm, S6). When the temperature in the processing chamber 7 rises (for example, 60 ° C.), the wafer W is moved downward (the distance between the hot plate 5 and the wafer W is, for example, 5 mm, S21 and S22), and after further temperature rise (for example, 70 ° C.). Further, the wafer W is moved downward (the interval between the hot plate 5 and the wafer W is 3 mm, for example, S23 and S24).
[0074]
Until the distance between the hot plate 5 and the wafer W is changed from 7 mm to 0 mm, the silylating agent vapor is continuously introduced as in the case shown in FIG. In this way, the multi-stage wafer W is moved downward, and finally the wafer W is lowered to a low level in contact with the hot plate 5. According to this, it is possible to move the wafer W following the change in temperature variation as compared with the case where the holding at the intermediate level is performed in one stage. Therefore, it is possible to perform a silylation process in which the influence of temperature variation is further reduced.
[0075]
In the example of FIG. 10, the case where the wafer W is moved in the vertical direction is shown in five stages, but the present invention can naturally be applied even if there are four stages or more than six stages. . Furthermore, the distance between the hot plate 5 and the wafer W when the wafer W is changed stepwise or the temperature in the processing chamber 7 is an example, and is not limited to the above.
[0076]
Further, the configuration of the supply ring 14 can be changed and used as follows. In the supply ring 14 shown in FIG. 11 (a), the supply holes 14p, 14q, 14r formed on the inner peripheral surface of the ring member are set so that the diameter of the supply holes located on the upper side increases. ing. That is, the supply hole 14p located at the lowermost side has the smallest diameter, the diameter of the supply hole 14q located above it is larger than the diameter of the supply hole 14p, and the diameter of the supply hole 14r located at the uppermost side is The largest is set. In other words, the diameter of the supply hole located on the front side of the wafer W is increased and the diameter of the supply hole located on the back side of the wafer W is reduced. Thus, the diameter of the supply hole formed in the vertical direction of the inner peripheral surface of the ring member 14b is set so as to be larger as it is located on the upper side.
[0077]
Thus, as can be seen from FIG. 11B, in the state where the wafer W is lifted up when the vapor containing the silylating agent is blown out, the supply hole 14p having the smallest diameter is on the back side of the wafer W. In addition, the supply hole 14r having the largest diameter is disposed on the surface side of the wafer W. Therefore, a larger amount of vapor can be supplied to the surface of the wafer W to be silylated than the back surface of the wafer W that is not subjected to the silylation treatment, and processing can be performed more effectively. Moreover, since the amount of steam blown to the back surface of the wafer W that is not subjected to silylation treatment can be reduced, the silylating agent that can be used can be saved.
[0078]
Of course, as in the example of FIG. 11, not only when the three sizes of supply holes are arranged stepwise in the ring member 14 b in the direction perpendicular to the surface of the wafer W, two sizes of supply holes are arranged. Or you may arrange | position the supply hole of four or more magnitude | sizes.
[0079]
Furthermore, in the supply ring 14 shown in FIG. 12, a plurality of supply holes 14a are formed in a portion corresponding to almost a half of the inner peripheral surface of the ring member 14b, and the above-mentioned supply is formed in the remaining inner peripheral surface. A plurality of exhaust holes 14e are formed to face the holes 14a. When the supply hole 14a and the exhaust hole 14e are arranged to face each other in this manner, as shown in FIG. 13, the vapor supplied from the supply hole 14a becomes a horizontal flow with respect to the wafer W as it is from the opposite exhaust hole 14e. Exhausted. Therefore, since no turbulent flow is generated, the uniformity of processing is improved and the exhaust efficiency is improved. Of course, the ratio of the supply holes 14a and the exhaust holes 14e arranged on the inner peripheral surface can be changed as appropriate according to the mode of use.
[0080]
As shown in FIG. 14, the hot plate 5 has a hole 9 for the lift pin 10 to move up and down. An inert gas such as N ₂ The gas may be blown to the non-processed surface of the wafer W, for example, the back surface of the wafer W. Therefore, in the example shown in FIG. ₂ A gas supply unit 81 for sending gas and a pipe line 82 are provided.
[0081]
Thus, N on the back surface of the wafer W ₂ At the start of blowing out the gas, the silylation process is completed, and when the vapor containing the silylating agent in the chamber 7 is purged with an inert gas, or the vapor containing the silylating agent from the chamber 7 is inert gas. And the wafer W is started to be lifted by the lift pins 10 as shown in FIG.
[0082]
In this way, it is possible to suppress deposition of deposits on the non-processed surface of the wafer W by blowing the inert gas onto the non-processed surface of the wafer W, for example, the back surface of the wafer W. The supply ring 14 shown in FIG. 16 has, for example, the upper supply holes 14l and 14m among the supply holes 14l, 14m and 14n formed in the vertical direction of the inner peripheral surface of the ring member 14b. A processing gas, for example, a vapor containing a silylating agent is supplied to the lower supply hole 14m, and an inert gas, for example, N ₂ The gas is blown out. Thereby, a processing gas, for example, a vapor containing a silylating agent can be supplied to the processing surface of the wafer W, and an inert gas, for example, N, is supplied to the non-processing surface of the wafer W. ₂ Gas can be blown out. Moreover, it can be set as the structure by which a vapor | steam is not supplied to the non-processing surface of the wafer W, and it can suppress that a deposit adheres to the non-processing surface of the wafer W by this.
[0083]
For the upper supply holes 14l and 14m, a mechanism capable of selectively blowing out a processing gas, for example, a vapor containing a silylating agent and an inert gas, may be used. In this case, for example, as shown in FIG. 17, the supply holes 14 l and 14 m are connected to the MFC 33 and the inert gas introduction source 92 via the supply gas switching mechanism 91. On the other hand, the supply hole 14 n is directly connected to the inert gas introduction source 92 without the supply gas switching mechanism 91. The supply gas switching mechanism 91 selectively introduces the inert gas from the inert gas introduction source 92 or the vapor containing the silylating agent from the MFC 33 into the supply holes 14l and 14m based on the control command of the controller 34. . The supply gas switching mechanism 91 is, for example, a switching valve.
[0084]
The present invention is not limited to the embodiment described above. The foregoing embodiments are presented to facilitate the understanding of the present invention, and the scope of the present invention is not limited by these embodiments, and various improvements and modifications can be made according to the spirit of the present invention. Is possible.
[0085]
【The invention's effect】
As described above in detail, according to the present invention, a uniform silylated layer can be obtained regardless of the hardware configuration.
[Brief description of the drawings]
FIG. 1 is a top view showing an overall configuration of a silylation processing apparatus according to a first embodiment of the present invention.
FIG. 2 is a longitudinal sectional view showing the overall configuration of the silylation processing apparatus according to the embodiment.
FIG. 3 is a perspective configuration diagram of a supply ring according to the embodiment.
FIG. 4 is a diagram showing an overall configuration of the silylation processing apparatus according to the embodiment together with a control system.
FIG. 5 is a diagram showing an overall configuration of a resist processing system to which the silylation processing apparatus according to the embodiment is applied.
FIG. 6 is a side view of a resist processing system to which the silylation processing apparatus according to the embodiment is applied.
FIG. 7 is a front view for explaining the function of the resist processing system to which the silylation processing apparatus according to the embodiment is applied.
FIG. 8 is a view showing a silylation treatment process according to the embodiment.
FIG. 9 is a view showing a flowchart of a silylation process according to the embodiment.
FIG. 10 is a flowchart showing a modified example of the silylation process.
FIG. 11 is a perspective view of a supply ring according to a modification of the embodiment.
FIG. 12 is a plan view of a supply ring according to still another modification of the embodiment.
13 is an explanatory view of a side cross-section showing the flow of airflow when the supply ring of FIG. 12 is used.
FIG. 14 is a plan view of a side cross-section of a silylation processing apparatus according to still another modification of the embodiment.
FIG. 15 is a plan view of a side cross section of a silylation processing apparatus according to still another modification of the embodiment.
FIG. 16 is a perspective view of a supply ring according to still another modification of the embodiment.
17 is a schematic diagram of a supply system including the supply ring of FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Silylation processing apparatus, 2 ... Base block, 2a ... Base block side part, 2b ... Base block bottom part, 3 ... Horizontal shielding board, 4 ... Opening, 5 ... Hot plate, 6 ... Support plate, 7 ... Processing chamber, 7A, 7B ... opening, 8 ... cover, 9 ... hole, 10 ... lift pin, 11 ... arm, 12 ... vertical cylinder, 12a ... rod, 13 ... shutter, 14 ... supply ring, 14a ... supply hole, 14b ... ring member, 14c: Supply passage, 14e: Exhaust hole, 14l, 14m, 14n ... Supply hole, 14p, 14q, 14r ... Supply hole, 15 ... Arm, 16 ... Vertical cylinder, 16a ... Rod, 17 ... Exhaust pipe, 18 ... Exhaust hole , 19 (20) ... duct, 21 ... machine room, 22 ... side wall, 23 ... projection, 31 ... silylating agent vapor introduction pipe, 32 ... bubbler tank, 33 ... mass flow controller, 34 ... con Roller, 35 ... Bubbling member, 36 ... Gas introduction pipe, 37 ... Carrier gas introduction pipe, 38 ... Silylating agent, 41 ... Temperature sensor, 42 ... Mass flow controller, 43 ... Pressure sensor, 62 ... Load / unload section, 63 ... Process processing section, 64 ... Interface section, 65 ... Place, 65a ... Projection section, 66 ... Sub arm mechanism, 67 ... Main arm mechanism, 68 ... Main arm, 69 ... Guide, 70 ... Sub arm mechanism, 71 ... Rail, 81 ... Gas supply unit, 82 ... Pipe line, 91 ... Supply gas switching mechanism, 92 ... Inert gas introduction source

Claims (14)

A chamber;
A heating mechanism provided in the chamber for heating the substrate;
A supply mechanism for supplying a vapor containing a silylating agent into the chamber from a plurality of supply holes arranged to surround the substrate and having different hole diameters in a direction perpendicular to the substrate surface ;
A substrate holding jig capable of holding the substrate in the chamber and adjusting the distance between the heating mechanism and the substrate in at least three stages ;
The silylation processing apparatus characterized by comprising. A chamber;
A heating mechanism that is provided in the chamber and heats a substrate having a processing surface on which silylation is to proceed and a non-processing surface that is in a front-back relationship with the processing surface ;
Vapor containing a silylating agent is contained in the chamber from a plurality of supply holes that surround the substrate and are disposed such that the processing surface side of the substrate has a larger hole diameter than the non-processing surface side of the substrate. A supply mechanism for supplying;
A substrate holding jig capable of holding the substrate in the chamber and adjusting the distance between the heating mechanism and the substrate in at least three stages ;
The silylation processing apparatus characterized by comprising. The silylation processing apparatus according to claim 1 , wherein the supply hole is provided on an inner peripheral surface of a supply ring disposed so as to surround the substrate. A plurality of supply holes are formed in a portion of the inner peripheral surface of the supply ring that is not more than half a circumference, and a plurality of exhaust holes are formed on the remaining inner peripheral surface where the supply holes are not formed so as to face each other with the substrate interposed therebetween. The silylation processing apparatus according to claim 3 , wherein A chamber;
A heating mechanism provided in the chamber for heating the substrate;
Oite into the chamber, the vapor containing silylating agent is supplied to the treated surface of the substrate, a supply mechanism for supplying inert gas to the non-treated surface of the substrate,
A substrate holding jig capable of holding the substrate in the chamber and adjusting the distance between the heating mechanism and the substrate in at least three stages ;
The silylation processing apparatus characterized by comprising. A chamber;
A heating mechanism provided in the chamber for heating the substrate;
A supply mechanism for supplying a vapor containing a silylating agent into the chamber;
A substrate holding jig capable of holding the substrate in the chamber and adjusting the distance between the heating mechanism and the substrate in at least three stages ;
A silylation processing apparatus comprising:
A supply ring that is disposed so as to surround the substrate and includes a plurality of first supply holes and a plurality of second supply holes on an inner peripheral surface;
The substrate has a processing surface on which silylation is to proceed, and a non-processing surface in front and back relation with the processing surface,
The first supply hole is provided on the processing surface side of the substrate, and the second supply hole is provided on the non-processing surface side of the substrate,
The steam from the supply mechanism is supplied from the first supply hole,
An inert gas is supplied from the second supply hole . A feed gas switching mechanism connected to the first supply hole, and connected to inert gas inlet part to the feed gas switching mechanism further wherein the supply mechanism is connected to the feed gas switching mechanism, The silylation processing apparatus according to claim 6 , wherein the inert gas and the vapor are selectively supplied from the first supply hole by switching the supply gas switching mechanism. A chamber;
A hot plate provided in the chamber as a heating mechanism for heating the substrate;
Oite within said chamber, a supply mechanism for supplying only the vapor containing silylation agent to the processing surface of the substrate,
Lift pins as substrate holding jigs that hold the substrate in the chamber and can adjust the distance between the heating mechanism and the substrate to at least three stages ;
A hole is formed in the hot plate so that the lift pin protrudes from the hot plate and moves while holding the substrate, and an inert gas is supplied to the non-processed surface of the substrate through the hole. The silylation processing apparatus characterized by the above-mentioned . Carrying the substrate into the chamber and holding the substrate at a predetermined distance from a heating mechanism provided in the chamber;
Introducing a vapor containing a silylating agent into the chamber to fill the chamber with a silylating agent atmosphere;
Heating the inside of the chamber by the heating mechanism;
Bringing the substrate close to the heating mechanism and uniformly diffusing the silylation atmosphere into the chamber at a temperature at which the silylation reaction of the substrate does not occur;
The substrate is further brought closer to the heating mechanism to raise the temperature of the substrate, the introduction of the vapor containing the silylating agent into the chamber is stopped, and the chamber is sealed without exhausting from the chamber. A step of causing a silylation reaction on the surface of the substrate ;
The silylation processing method characterized by including this. Carrying the substrate into the chamber and holding the substrate at a predetermined distance from a heating mechanism provided in the chamber;
A step of Oite, the only heating mechanism opposite to the substrate surface by introducing a vapor containing silylating agent is filled the chamber with a silylating agent atmosphere in the chamber,
Heating the inside of the chamber by the heating mechanism;
Bringing the substrate close to the heating mechanism and uniformly diffusing the silylation atmosphere into the chamber at a temperature at which the silylation reaction of the substrate does not occur;
Further bringing the substrate closer to the heating mechanism to raise the temperature of the substrate and causing a silylation reaction on the surface of the substrate ;
The silylation processing method characterized by including this. The silylation processing method according to claim 9 or 10 , wherein the distance between the heating mechanism and the substrate is set so as to change in at least three stages. The silylation processing method according to claim 9 or 10 , wherein a vapor containing the silylating agent is introduced after decompressing the inside of the chamber. The silylation treatment method according to claim 9 or 10 , wherein the silylation reaction is stopped by introducing an inert gas into the chamber and exhausting the vapor containing the silylating agent from the chamber. 14. The silylation method according to claim 13 , wherein the substrate is moved away from the heating mechanism after exhausting the vapor containing the silylating agent from the chamber by introducing the inert gas.

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