CN112947634B - Hot plate temperature adjusting method and hot plate device - Google Patents
Hot plate temperature adjusting method and hot plate device Download PDFInfo
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- CN112947634B CN112947634B CN202110134821.4A CN202110134821A CN112947634B CN 112947634 B CN112947634 B CN 112947634B CN 202110134821 A CN202110134821 A CN 202110134821A CN 112947634 B CN112947634 B CN 112947634B
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- temperature
- control system
- heating device
- line width
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/22—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element being a thermocouple
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Control Of Resistance Heating (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a hot plate temperature adjusting method, which comprises the following steps: acquiring a temperature value T1 of the heating device; acquiring a temperature value T2 of the top of the chamber; and the control system adjusts the heating device according to the relation between the line width and the temperature values T1 and T2 so as to obtain the target line width. A linear relation exists between the temperature value T1 of the heating device and the line width, and a linear relation also exists between the temperature value T2 of the top of the cavity and the line width. The control system adjusts the heating device according to two linear relationships. The invention carries out bidirectional temperature compensation on the hot plate according to the temperature value T1 of the heating device and the temperature value T2 of the top of the cavity. The bidirectional temperature compensation improves the accuracy of temperature adjustment of the hot plate compared with the unidirectional temperature compensation, so that the target line width can be obtained. The invention also discloses a hot plate device.
Description
Technical Field
The invention relates to the field of wafer baking, in particular to a hot plate temperature adjusting method and a hot plate device.
Background
The hot plate for baking the wafer is heated by a heating device. The temperature of the hot plate affects the line width of the wafer. The line width is adjusted by adjusting the temperature of the hot plate by those skilled in the art, so as to improve the uniformity of the line width of the wafer. However, in the prior art, the accuracy of the line width adjustment of the wafer is not sufficient, and the target line width may not be obtained.
Disclosure of Invention
The invention aims to improve the accuracy of temperature adjustment of a hot plate so as to obtain a target line width. In order to achieve the purpose, the invention provides the following technical scheme:
a hot plate temperature adjusting method comprises the following steps:
acquiring a temperature value T1 of the heating device;
acquiring a temperature value T2 of the top of the chamber;
and the control system adjusts the heating device according to the relation between the line width and the temperature values T1 and T2 so as to obtain the target line width.
Preferably, the "adjusting the heating device by the control system according to the relationship between the line width and the temperature values T1 and T2" is specifically:
the control system obtains a first adjustment amount according to a linear relation between the line width and a temperature value T1, the control system obtains a second adjustment amount according to a linear relation between the line width and a temperature value T2, the control system obtains an average adjustment amount according to the first adjustment amount and the second adjustment amount, and the control system adjusts the heating device according to the average adjustment amount.
Preferably, the linear relationship between the line width and the temperature value T2 is: y = AX 2 + BX + C, Y is the line width, X is the temperature value T2, A, B, C is the optimum parameter value obtained through the experiment.
Preferably, the method for acquiring the temperature value T1 of the heating device includes: and a first temperature probe is embedded in the heating device and is in communication connection with the control system.
Preferably, the method for obtaining the temperature value T2 at the top of the chamber is as follows: and a heat absorbing plate is arranged at the top in the chamber, a second temperature probe is embedded in the heat absorbing plate, and the second temperature probe is in communication connection with the control system.
The present invention also provides a hot plate apparatus, comprising: a chamber; a hot plate located within the chamber; heating device, heating device is used for giving the hot plate heating, still includes:
a control system in communication with the heating device;
a first temperature detector for detecting a temperature of the heating device, the first temperature detector being in communicative connection with the control system;
the second temperature detector is used for detecting the temperature of the top of the chamber and is in communication connection with the control system, and the control system adjusts the heating device according to the temperature value measured by the first temperature detector and the temperature value measured by the second temperature detector so as to obtain the target line width.
Preferably, the first temperature detector is a thermocouple and the second temperature detector is a temperature probe.
Preferably, a heat absorbing plate is arranged at the top of the inner part of the chamber, and the temperature probe is embedded in the heat absorbing plate.
Preferably, the material of the heat absorbing plate is metal aluminum, and the heat absorbing plate is located above the hot plate.
Preferably, the heat absorbing plate is plated to the top of the chamber by means of electroless aluminum plating.
According to the technical scheme, a linear relation exists between the temperature value T1 of the heating device and the line width, and a linear relation also exists between the temperature value T2 of the top of the cavity and the line width. The control system regulates the heating device according to two linear relationships. The invention carries out bidirectional temperature compensation on the hot plate according to the temperature value T1 of the heating device and the temperature value T2 of the top of the cavity. The bidirectional temperature compensation improves the accuracy of temperature adjustment of the hot plate compared with the unidirectional temperature compensation, so that the target line width can be obtained.
Drawings
In order to more clearly illustrate the solution of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without inventive efforts.
FIG. 1 is a linear relationship between line width and chamber top temperature T2 according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a hot plate apparatus according to an embodiment of the present invention.
Wherein, 1 is a heat absorbing plate, 2 is a temperature probe, and 3 is a chamber.
Detailed Description
The invention discloses a hot plate temperature adjusting method which can improve the accuracy of hot plate temperature adjustment so as to obtain a target line width. The invention also discloses a hot plate device.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
The invention discloses a hot plate temperature adjusting method, which comprises the following steps: acquiring a temperature value T1 of the heating device; acquiring a temperature value T2 at the top of the chamber 3; the control system adjusts the heating device according to the relation between the line width and the temperature values T1 and T2.
A linear relation exists between the temperature value T1 of the heating device and the line width, and a linear relation also exists between the temperature value T2 of the top of the cavity 3 and the line width. The control system adjusts the heating device according to two linear relationships. The invention carries out bidirectional temperature compensation on the hot plate according to the temperature value T1 of the heating device and the temperature value T2 of the top of the cavity 3. The bidirectional temperature compensation improves the accuracy of temperature adjustment of the hot plate compared with the unidirectional temperature compensation, so that the target line width can be obtained.
Next, how the control system adjusts the heating device according to the relationship between the line width and the temperature values T1 and T2 is described in detail: a certain linear relation exists between the line width and the temperature value T1 of the heating device. After the temperature value T1 of the heating device is obtained, the corresponding line width can be deduced. If the corresponding line width is larger than or smaller than the target line width, a first adjustment amount is obtained according to the linear relation between the line width and the temperature value T1, so that the line width of the wafer is the target line width.
Similarly, there is a linear relationship between the line width and the temperature T2 at the top of the chamber 3. Referring to fig. 1, fig. 1 is a linear relationship diagram of a line width and a temperature T2 at the top of a chamber according to an embodiment of the present invention, wherein X represents the temperature T2 at the top of the chamber 3, and Y represents the line width of a wafer. After obtaining the temperature T2 at the top of the chamber 3, the corresponding line width can be derived. And if the corresponding line width is larger than or smaller than the target line width, acquiring a second adjustment amount according to the linear relation between the line width and the temperature value T2 so as to enable the line width of the wafer to be the target line width.
After the control system acquires the first adjustment amount and the second adjustment amount, the control system acquires an average adjustment amount according to the first adjustment amount and the second adjustment amount. The control system adjusts the heating device according to the average adjustment amount. And the average regulating quantity of the first regulating quantity and the second regulating quantity is the bidirectional temperature compensation.
The linear relationship between the line width and the temperature T2 at the top of the chamber 3 is: y = AX 2 + BX + C, where Y is the line width, X is the temperature value T2 at the top of the chamber 3, and A, B, C is the optimum parameter value obtained through the experiment. I.e. the line width and the temperature value T2 at the top of the chamber 3 satisfy a one-dimensional quadratic relationship.
The method for acquiring the temperature value T1 of the heating device comprises the following steps: and a thermocouple is arranged in the heating device and is in communication connection with the control system, and the thermocouple transmits the detected temperature value of the heating device to the control system.
The method for acquiring the temperature value T2 of the heating device comprises the following steps: the top of the interior of the chamber 3 is provided with a heat absorbing plate 1, a temperature probe 2 is embedded in the heat absorbing plate 1, and the temperature probe 2 is in communication connection with a control system. The heat absorbing plate 1 is used for absorbing heat emitted by the heat disc so as to facilitate the detection of the temperature probe 2. The temperature probe 2 transmits the detected temperature value T2 to the control system.
It should be noted that, the arrangement of the heat absorbing plate 1 is not only beneficial to the detection of the temperature probe 2, but also reduces the internal space of the chamber 3, slows down the heat dissipation of the temperature at the top of the chamber 3, and reduces the discrete range of heat, thereby enabling the temperature in the chamber 3 to be relatively uniform.
The material of the heat absorbing plate 1 is preferably metal aluminum, and the heat absorbing plate 1 made of metal aluminum is positioned right above the hot plate. The heat emitted from the hot plate rises and is absorbed by the heat absorbing plate 1. The wall plate of the chamber 3 is also made of metal, and the heat absorbing plate 1 made of metal aluminum is plated on the top of the chamber 3 by means of chemical aluminum plating.
The invention also discloses a hot plate device, which comprises a chamber 3, a hot plate, a heating device, a control system, a first temperature detector and a second temperature detector, and please refer to fig. 2, and fig. 2 is a schematic structural diagram of the hot plate device provided by an embodiment of the invention. Wherein the hot plate is located in the chamber 3 and the heating means is used to heat the hot plate. The control system is in communication connection with the heating device and is used for adjusting the heating amount of the heating device.
The first temperature detector is used for detecting the temperature T1 of the heating device, the first temperature detector is in communication connection with the control system, and the first temperature detector transmits the detected temperature value T1 to the control system. The second temperature detector is used for detecting a temperature value T2 at the top of the chamber 3, the second temperature detector is in communication connection with the control system, and the second temperature detector transmits the detected temperature value T2 to the control system. The control system adjusts the heating amount of the heating device according to the temperature value T1 and the temperature value T2, so that the line width of the wafer is the target line width.
Further, the first temperature detector is preferably a thermocouple, and the second temperature detector is preferably a temperature probe.
The top of the interior of the chamber 3 is provided with a heat absorbing plate 1, and a temperature probe 2 is embedded in the heat absorbing plate 1. The heat absorbing plate 1 can absorb heat emitted by the heat disc to facilitate the detection of the temperature probe 2.
The material of the heat absorbing plate 1 is preferably metal aluminum, and the heat absorbing plate 1 made of metal aluminum is positioned right above the hot plate. The heat emitted from the hot plate rises and is absorbed by the heat absorbing plate 1. The wall plate of the chamber 3 is also made of metal, and the heat absorbing plate 1 made of metal aluminum is plated on the top of the chamber 3 by means of chemical aluminum plating.
Finally, it should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A method for adjusting the temperature of a hot plate is characterized by comprising the following steps:
acquiring a temperature value T1 of the heating device;
acquiring a temperature value T2 at the top of the cavity;
the control system adjusts the heating device according to the relation between the line width and the temperature values T1 and T2 to obtain a target line width;
the control system adjusts the heating device according to the relation between the line width and the temperature values T1 and T2, and specifically comprises the following steps:
the control system obtains a first adjustment quantity according to a linear relation between the line width and the temperature value T1, the control system obtains a second adjustment quantity according to a linear relation between the line width and the temperature value T2, the control system obtains an average adjustment quantity according to the first adjustment quantity and the second adjustment quantity, and the control system adjusts the heating device according to the average adjustment quantity.
2. The method of claim 1, wherein a linear relationship between the line width and the temperature T2 is: y = AX 2 + BX + C, Y is the line width, X is the temperature value T2, A, B, C is the parameter value obtained through the experiment.
3. The method for adjusting the temperature of the hot plate according to claim 1, wherein the method for obtaining the temperature value T1 of the heating device comprises: and arranging a thermocouple in the heating device, wherein the thermocouple is in communication connection with the control system.
4. The method for adjusting the temperature of a hot plate according to claim 1, wherein the method for obtaining the temperature value T2 at the top of the chamber comprises: the top of the interior of the chamber is provided with a heat absorbing plate, a temperature probe is embedded in the heat absorbing plate, and the temperature probe is in communication connection with the control system.
5. A hot plate apparatus comprising: a chamber; a hot plate located within the chamber; heating device, heating device is used for giving the hot plate heating, its characterized in that still includes:
a control system in communication with the heating device;
a first temperature detector for detecting a temperature of the heating device, the first temperature detector being in communication with the control system;
the second temperature detector is used for detecting the temperature of the top of the chamber and is in communication connection with the control system, and the control system adjusts the heating device according to the temperature value measured by the first temperature detector and the temperature value measured by the second temperature detector so as to obtain a target line width;
the control system adjusts the heating device according to the temperature value measured by the first temperature detector and the temperature value measured by the second temperature detector, specifically: the control system obtains a first adjustment quantity according to a linear relation between the line width and the temperature value measured by the first temperature detector, the control system obtains a second adjustment quantity according to a linear relation between the line width and the temperature value measured by the second temperature detector, the control system obtains an average adjustment quantity according to the first adjustment quantity and the second adjustment quantity, and the control system adjusts the heating device according to the average adjustment quantity.
6. A hot plate device according to claim 5, characterized in that the first temperature detector is a thermocouple and the second temperature detector is a temperature probe.
7. A hot plate device according to claim 6, characterized in that the top of the interior of the chamber is provided with a heat absorber plate in which the temperature probes are embedded.
8. The heat tray device according to claim 7, wherein the heat absorbing plate is made of aluminum, and the heat absorbing plate is located above the heat tray.
9. A hot plate apparatus according to claim 8, wherein the heat absorbing plate is plated to the top of the chamber by means of electroless aluminum plating.
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| CN202110134821.4A CN112947634B (en) | 2021-02-01 | 2021-02-01 | Hot plate temperature adjusting method and hot plate device |
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| CN202110134821.4A CN112947634B (en) | 2021-02-01 | 2021-02-01 | Hot plate temperature adjusting method and hot plate device |
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| CN112947634B true CN112947634B (en) | 2022-12-30 |
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