JP2003100608A - Drying apparatus and drying method for film forming liquid - Google Patents

Abstract

PROBLEM TO BE SOLVED: To dry resist liquid coating a substrate as quickly as possible in a short time so that film thickness after drying is quickly formed uniform. SOLUTION: The substrate 1 coated with the resist liquid is housed to be retained in a container 10. A housing space 13 in the container 10 is retained to a reduced pressure state. Drying is done under a normal temperature in the prior period of a drying process, and the drying is performed under a relatively high temperature by raising the temperature of the housing space 13 in the container 10 at the time when the drying is fairly progressed and therewith the viscosity of the resist liquid on the substrate 1 is increased and heat convection stops.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for drying a film forming liquid such as a resist liquid applied on a substrate such as a semiconductor wafer.

[0002]

2. Description of the Related Art As one of film forming techniques in a semiconductor manufacturing apparatus, there is a method using a scan coating method as disclosed in Japanese Patent Laid-Open No. 2000-077326.

The scan coating method is applied, for example, when a resist solution is coated on a substrate such as a semiconductor wafer. The nozzle is moved linearly from the nozzle by moving the nozzle relative to the substrate. The resist solution is applied to the substrate.

[0004]

By the way, according to such a scan coating method, the resist liquid coated on the substrate remains liquid. The wafer coated with the resist solution is usually moved to the next baking step.
If the resist solution remains liquid, problems such as the resist solution flowing during transportation and a large amount of organic solvent of the resist solution generated during the baking process occur.

For this reason, it is necessary to evaporate the excess solvent to dry the resist solution after the scan coating and before the baking treatment (by the way, when the resist solution is coated by the spin coating method, The resist solution is dried by rotating the substrate.).

However, if the resist solution is dried in a normal temperature atmosphere, the time required for the drying process becomes long.

On the other hand, when the resist solution is dried in a predetermined high temperature atmosphere, the time required for the drying process is shortened, but
The resist solution is heated by convection on the surface of the substrate, and the film thickness after drying becomes uneven.

Therefore, an object of the present invention is to dry a film-forming liquid applied on a substrate in a shortest possible time so that the film thickness after drying becomes as uniform as possible. An object is to provide a film liquid drying device and a film liquid drying method.

[0009]

[Means for Solving the Problems] In order to solve the above problems,
The invention according to claim 1 is a film-forming-solution drying device for drying a film-forming solution applied to a substrate, comprising substrate holding means for holding the substrate, and drying of the substrate held by the substrate supporting means. A drying temperature adjusting means capable of adjusting the temperature, and a temperature adjusting control means for increasing the drying temperature by the drying temperature adjusting means during the drying process after the substrate is held by the substrate holding means. is there.

As described in claim 2, the substrate holding means further comprises a time measuring means for measuring an elapsed time after the substrate is held and a drying process is started, and the temperature adjustment control means is provided with the time measuring means. You may make it control the drying temperature by the said drying temperature adjustment means based on the timekeeping signal output from a means.

Further, according to a third aspect of the invention, there is further provided atmospheric pressure detecting means capable of detecting the atmospheric pressure around the substrate, which varies depending on the degree of dryness of the film-forming liquid, and the temperature adjustment control means comprises the atmospheric pressure. Based on the atmospheric pressure detection signal from the detection means,
You may make it control the drying temperature by the said temperature adjustment control means.

Further, according to a fourth aspect of the present invention, the apparatus further comprises an airtight container for holding the substrate held by the substrate holding means in an airtight state, and suction means for sucking gas in the airtight container. Good.

In this case, as described in claim 5, the airtight container may be further provided with a gas supply means for supplying a gas from the outside.

According to a sixth aspect of the present invention, there is provided a film forming liquid drying device for drying the film forming liquid applied to the substrate, comprising a substrate holding means for holding the substrate under a predetermined drying temperature environment. A high temperature side drying device having a low temperature side drying device having a substrate holding means for holding a substrate under a drying temperature environment higher than the predetermined drying temperature; and a substrate held on the low temperature side drying device side having the high temperature side. And a substrate conveying means for conveying the substrate to the side drying device, and an operation for causing the substrate conveying means to convey the substrate to the high temperature side drying device during the drying process after the substrate is held on the low temperature side drying device side. And a transport control means for controlling the transport.

Further, as described in claim 7, it further comprises a time measuring means for measuring an elapsed time after the start of the drying process, and the conveyance control means, based on a time measuring signal outputted from the time measuring means, You may make it control the timing which conveys a board | substrate to the said high temperature side drying device.

Further, as described in claim 8, the low-temperature-side drying device changes according to the degree of drying of the film-forming liquid.
Further, it is further provided with an atmospheric pressure detection means capable of detecting the atmospheric pressure around the substrate, and the transfer control means controls the timing of transferring the substrate to the high temperature side drying device based on the atmospheric pressure detection signal from the atmospheric pressure detection means. Good.

Further, as described in claim 9, the low-temperature side drying device includes an airtight container for accommodating the substrate in an airtight state,
Suction means for sucking the gas in the airtight container may be further provided.

In this case, as described in claim 10, the low temperature side drying device may further include gas supply means for supplying a gas from the outside into the airtight container.

The invention according to claim 11 is a method for drying a film-forming liquid applied to a substrate, wherein the film-forming liquid applied to the substrate is dried while being dried. This is to raise the drying temperature of the film-forming liquid applied to the substrate.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings.

In each of the following embodiments, the apparatus for drying a film forming solution and the method for drying a film forming solution are an apparatus for drying a resist solution applied to a substrate such as a semiconductor wafer and a method for drying the resist solution. The applied example will be described.

First Embodiment <Overall Structure of Film Forming Liquid Drying Device> FIG. 1 is a schematic sectional view showing the entire film forming liquid drying device 5.

The film-forming liquid drying device 5 roughly includes a container 10 for containing and holding the substrate 1, a heater 30 capable of adjusting a drying temperature for the substrate 1, and a temperature adjustment control by the heater 30. The controller 35 is provided, and the resist liquid which is applied to the substrate 1 and remains liquid is dried.

The container 10 is constructed so that the substrate 1 can be housed in an airtight state. Specifically, the container 10 includes a main body 11 in which the substrate 1 is housed and arranged, and a lid 20 that covers the main body 11.

FIG. 2 shows a plan view of the main body 11 and FIG. 3 shows a sectional view of the container 10 with the lid 20 opened. As shown in FIGS. 1 to 3, the main body portion 11 is formed in a substantially disc shape, and a predetermined accommodation space 13 surrounded by a peripheral wall portion 12 is formed in the central portion on the upper surface side. .
The accommodation space 13 is formed in a shape and a size capable of accommodating the substrate 1 in a horizontal posture. Here, the substrate 1 is formed in a substantially circular shape in a plan view, and the accommodation space 13 is formed in a circular hole shape which is slightly larger than the substrate 1.

The bottom surface 1 of the main body 11 inside the accommodation space 13
A plurality of protrusions 15 capable of supporting the substrate 1 are formed on the substrate 4, and a plurality of positioning guides 16 that abut on the peripheral side surface of the substrate 1 to position the substrate 1 in the horizontal direction. In FIG. 2, a predetermined space 3 is provided along the outer peripheral direction of the substrate 1 to be housed and arranged in the housing space 13.
One protrusion 15 is formed, and a positioning guide 16 is formed at an outer position corresponding to each protrusion 15.

Then, when the substrate 1 is accommodated in the accommodation space 13, the substrate 1 is supported by the respective projections 15,
It is held at a predetermined position separated from the bottom surface 14.

In this embodiment, these protrusions 1
5 and the positioning guide 16 serve as a substrate holding means for holding the substrate 1.

A push-up pin 17 is provided on the main body 11 so as to be able to move back and forth from the bottom surface 14 (see FIG. 3).
In FIG. 2, three push-up pins 17 are provided between the respective positioning guides 16 at positions where they can contact the peripheral edge of the substrate 1. The push-up pin 17 is provided on the bottom surface 1 by a drive unit (not shown).
In the state of being driven in and out of 4 and advanced upward, the board 1
Is lifted up (refer to the substrate 1 indicated by a chain double-dashed line in FIG. 3) to transfer the substrate 1 to and from a substrate transfer robot (not shown), and when retracted downward, the substrate 1 is accommodated in the accommodation space. 13 to move the substrate 1 downward to project the substrate 15
It is configured to be supported by.

Further, an annular slit 18 is formed along the annular portion of the main body portion 11 where the inner surface of the peripheral wall portion 12 and the bottom surface 14 intersect with each other, and air suction that penetrates from the annular slit 18 to the outer surface of the main body portion 11 is performed. A hole 19 is formed.

A vacuum pump 40 as a suction means is connected to the outer opening of the air suction hole 19 via a pressure adjusting valve 41. Then, when the vacuum pump 40 is caused to perform the suction operation, the gas in the container 10 is sucked.
At this time, since the gas is sucked through the annular slit 18 in the main body portion 11, it is possible to apply a suction force as uniform as possible around the substrate 1.

The lid 20 covers the main body 11 in an airtight state and is attached to the main body 11 so as to be openable and closable.

That is, the upper portion of the peripheral wall portion 12 has a shape in which the outer peripheral side portion is stepped down from the inner peripheral side portion, and correspondingly, the lower peripheral portion of the lower surface of the lid 20 projects one step. It has a shape. Then, when the lid 20 is attached to the main body 11 so that the outer peripheral portion of the lower surface of the lid 20 is fitted into the upper portion of the peripheral wall portion 12, the accommodation space 13 is kept airtight. An O-ring 28 is provided on the side of the peripheral wall portion 12 by an elastic member such as rubber so that the airtight state can be more reliably maintained.

Further, the lid body 20 has its upper and lower parts (container 1
Gas supply hole 22 penetrating inside (outside of 0)
Are formed. An inert gas supply source 42 as a gas supply means is connected to the gas supply hole 22 via a leak amount adjustment valve 43. Then, with the lid 20 closed to the main body 11, the container 1 is
When the air in 0 is sucked, a negative pressure is generated in the accommodation space 13, and the negative pressure causes the inert gas (nitrogen gas or the like) in the inert gas supply source 42 to enter the accommodation space 13 through the gas supply hole 22. be introduced. Here, the inert gas is introduced because the humidity, temperature, etc. can be easily controlled.

The opening / closing operation of the lid 20 is performed by driving a drive unit (not shown).

The container 10 has a storage space 1
A barometer 44 is provided for monitoring the air pressure inside the unit 3.

The heater 30 has a function of adjusting the drying temperature of the substrate 1 contained in the container 10. In the present embodiment, the lower surface side of the main body 11 and the lid 2
The heater 30 is provided on the upper surface side of 0, and the heat generated by the heater 30 is transferred to the gas in the housing space 13 of the container 10 through the inside of the main body 11 and the lid 20. As a result, the gas temperature around the substrate 1 rises above the ambient temperature of the apparatus, and the drying temperature of the substrate 1 can be raised.

The mode in which the heater 30 is provided is not limited to that described above, and may be provided in the accommodation space 13, for example.

The control unit 35 is for controlling the entire apparatus, is provided with a CPU, a ROM, a RAM and the like, and is constituted by a general microcomputer for performing a predetermined arithmetic operation by a software program stored in advance. There is.

The control unit 35 controls a series of operations described later. At least during the drying process described below,
The heater 30 is turned on to control the operation of raising the drying temperature.

In the present embodiment, the control unit 35 has a timer circuit 36 incorporated therein, and the timer circuit 36 measures the elapsed time after the start of the drying process. Then, after a predetermined time set in advance from the start of the drying process, the heater 30 is turned on to raise the drying temperature.

<Operation of Film Forming Liquid Drying Device> Next, the operation of the film forming liquid drying device 5 will be described with reference to FIG.

First, after the resist solution is applied to the substrate 1 by a coating device (not shown) (scan coating device or the like), the substrate 1 is transferred to the container 10 by a substrate transfer robot not shown in step S1. Be transported inside. The substrate 1 is supported on each protrusion 15 in the main body 11.

Thereafter, as shown in step S2, the lid 20 is closed to hermetically seal the container 10, and subsequently, as shown in step S3, the container 10 is evacuated by the vacuum pump 40.
The gas inside is sucked, and the inert gas from the inert gas supply source 42 is introduced into the container 10. At this time, the openings of the pressure adjusting valve 41 and the leak amount adjusting valve 43 are adjusted so that the inside of the accommodation space 13 is in a predetermined depressurized state in which the pressure is lower than the atmospheric pressure. At this time, the resist solution applied to the substrate 1 is dried at a relatively low temperature and a reduced pressure.

When the preset pre-drying time elapses after starting the drying process, the heater 30 is turned on to raise the drying temperature, as shown in step S4.

Here, the start of the drying process is based on the time of a predetermined processing operation that is performed along with the start of the drying process. For example, when the substrate 1 is transferred into the container 10, or the container 10
Can be used as a reference when the airtight is sealed or when the vacuum pump is operated.

The pre-drying time is such that even if the resist solution has been dried to some extent and the film is dried in a relatively high temperature atmosphere, the film thickness after drying is caused by the thermal convection of the resist solution on the surface of the substrate 1. The time is such that it does not become uneven.

That is, when the drying of the resist solution on the surface of the substrate 1 progresses to some extent, most of the solvent in the resist solution evaporates, and the viscosity rises significantly. Where, in general,
The degree of convection depends on the viscosity of the liquid (Marangoni number, etc.),
When the viscosity increases, it becomes difficult for convection to occur. Therefore, when the resist solution has been dried to some extent, thermal convection of the resist solution does not easily occur on the surface of the substrate 1 even if the resist solution is dried in a relatively high temperature atmosphere, and the film thickness after drying can be kept uniform. . Such a pre-drying time depends on the type of the substrate 1, the resist solution, the atmospheric pressure in the container 10, and other drying conditions.
Required experimentally and empirically.

The increased drying temperature in step S4 is set to a temperature lower than the flash temperature of the resist solution.

After the drying temperature is raised in step S4, as shown in step S5, when a preset complete drying time elapses, suction by the vacuum pump 40 is stopped to return the atmospheric pressure to the atmospheric pressure, and Heater 30
Is turned off to complete the drying process of the resist solution.

This complete drying time is the time required for the substrate 1 to be in a state in which it has been dried to such an extent that the problem caused by the organic solvent of the resist solution does not occur when the substrate 1 is baked. Yes, this complete drying time is also required experimentally and empirically.

Finally, in step S6, the lid 20
Is opened and the substrate 1 in the container 10 is taken out by a substrate transfer robot (not shown), and the drying process for the substrate 1 is completed.

The substrate 1 thus dried is conveyed to the next baking device (not shown).

The film-forming liquid drying device 5 configured as described above
According to the method for drying a film-forming liquid, since the film-forming liquid is dried at a relatively low temperature until the middle of the process for drying the film-forming liquid, thermal convection of the resist liquid in the drying process is prevented, and the film thickness after drying can be increased. Can be made uniform uniformly. Also, during the drying process, the drying proceeds to a certain degree and the viscosity rises so that heat convection does not easily occur, so the drying is performed at a relatively high temperature, so the subsequent drying can be performed in a short time, and the overall drying time Can be as short as possible.

In addition, by sucking the gas in the container 10, the drying is performed under the condition that the pressure is lower than the atmospheric pressure, so that the drying can be performed in a shorter time.

Furthermore, while the gas in the container 10 is sucked, the gas from the outside is introduced into the container 10,
Since the solvent of the resist solution in the container 10 is evaporated and the gas that has reached a saturated state can be replaced with a gas from the outside, drying can be performed in a shorter time also from this point.

<Modification of First Embodiment> In the first embodiment, the drying temperature is raised after the pre-drying time has elapsed after the start of the drying process. However, in the modification shown in FIG. As in the film-forming liquid drying device 5B, the drying temperature may be controlled according to the fluctuation of the atmospheric pressure around the substrate 1.

That is, this film-forming liquid drying device 5B is composed of the container 1
Atmospheric pressure detection unit 44 capable of detecting the atmospheric pressure in the accommodation space 13 of 0
B is provided, and the detection signal from the atmospheric pressure detecting unit 44B is output to the control unit 35B. The atmospheric pressure detection unit 44B detects the atmospheric pressure inside the accommodation space 13 to detect the atmospheric pressure around the substrate 1.

The control unit 35 in the first embodiment described above.
The control unit 35B corresponding to controls the drying temperature based on the detection signal. Specifically, the control unit 35B turns on the heating heater 30 when the atmospheric pressure falls below a preset threshold value or when the decreasing rate of the atmospheric pressure exceeds a preset speed. Increase the drying temperature.

This principle will be described with reference to FIG. A broken line in FIG. 6 shows a change in atmospheric pressure when suction is performed in the accommodation space 13 in a state where the substrate 1 is not accommodated in the container 10, and a solid line in FIG.
5 shows a change in atmospheric pressure when suction is performed in the accommodation space 13 in a state where the is accommodated. The suction force of the vacuum pump 40, various conditions related to the suction / introduction of gas such as the opening degrees of the valves 41 and 43, that is, the reduced pressure generation conditions are constant conditions.

As shown in the figure, when suction is performed in a state where the substrate 1 is not housed in the container 10, the atmospheric pressure gradually decreases, and eventually the amount of the inert gas introduced and the amount of suction are balanced,
It is maintained under a predetermined reduced pressure.

On the other hand, when suction is performed with the substrate 1 accommodated in the container 10, the atmospheric pressure sharply decreases at the beginning of suction (up to t1), but when the pressure is reduced to a predetermined pressure at time t1, The evaporation amount of the solvent in the resist solution applied to the substrate 1 is drastically increased, and the change in reduced pressure becomes gentle (t1 to
t2). Then, when the drying of the resist solution progresses to some extent at time t2 and the evaporation amount of the solvent decreases, the atmospheric pressure decreases in response to suction (t2 to t3), and at time t3, the amount of the inert gas introduced and the amount of suction are reduced. Are balanced,
It is maintained under a predetermined reduced pressure (from t3).

That is, at the times t2 to t3, the substrate 1
It can be considered that when the baking treatment is performed, the drying is advanced to such an extent that the problem due to the generation of the organic solvent in the resist solution does not occur.

At times t2 to t3, the atmospheric pressure falls below a predetermined threshold value P1 or the atmospheric pressure suddenly decreases, so that the rate of decrease in atmospheric pressure becomes greater than the predetermined speed.

Therefore, in the film-forming liquid drying device 5B according to this modification, the control unit 35B determines whether the atmospheric pressure is below the predetermined threshold value P1 based on the detection signal from the atmospheric pressure detecting unit 44B, or , It is determined whether the rate of decrease of atmospheric pressure exceeds a preset rate, and the atmospheric pressure is reduced to a predetermined threshold value P1.
Or the decrease rate of atmospheric pressure exceeds a preset rate, the heater 30 is turned on to raise the drying temperature.

Even in this case, the same effect as in the case of the first embodiment can be obtained.

In addition, since the drying temperature is raised in accordance with the fluctuation of the atmospheric pressure in the container 10, the coating condition of the resist solution and the drying conditions such as the ambient temperature of the container 10 correspond to the fluctuations. Appropriate drying process can be performed.

In the first embodiment and its modification, the drying temperature is raised only once during the drying process, but as the drying process progresses (for example, with the passage of time, or The drying temperature may be gradually or gradually increased or may be stepwise divided into a plurality of times.

Immediately after the start of the drying process, the drying temperature may be raised from room temperature as long as the resist solution applied to the substrate 1 is less likely to generate thermal convection.

{Second Embodiment} Next, a film forming liquid drying apparatus according to a second embodiment of the present invention will be described.

FIG. 7 is a schematic view showing the whole film forming liquid drying apparatus.

As shown in the figure, this film-forming-liquid drying apparatus comprises a low-temperature side drying apparatus 100, a high-temperature side drying apparatus 200,
Substrate carrying means 300 for carrying the substrate 1 from the low temperature side drying device 100 side to the high temperature side drying device 200.

The low-temperature-side drying device 100 has the same structure as the film-forming liquid drying device 5 of the first embodiment.

Constituent elements similar to those of the film-forming liquid drying device 5 are designated by the same reference numerals, and the description thereof will be omitted. Only the differences will be described.
At 0, the heater 30 and the controller 35 for controlling the heater 30 are omitted from the film-forming liquid drying device 5.

In the low temperature side drying apparatus 100, the substrate 1 is housed and held under a predetermined drying temperature environment (normal temperature here).

Further, the high temperature side drying device 200 also has substantially the same structure as the film forming liquid drying device 5 in the first embodiment.

Constituent elements similar to those of the film-forming liquid drying device 5 are designated by the same reference numerals, and the description thereof will be omitted. Only different points will be described. This high temperature side drying device 200
In the above, the structure relating to the suction / inert gas introduction from the film forming liquid drying device 5 is omitted. Specifically, instead of the container 10 in the film-forming liquid drying device 5, a main body 211 having a configuration in which the annular slit 18 and the air suction hole 19 formed in the main body 11 described above are omitted, and the lid 20 described above. A container 210 including a lid 220 having a configuration in which the gas supply hole 22 formed in the above is omitted is used. Further, the vacuum pump 40, the pressure adjusting valve 41, the inert gas supply source 42, and the leak amount adjusting valve 43 are omitted. Here, since the drying treatment under reduced pressure is effective only in the initial state of drying which is extremely susceptible to the external environment, there is no problem even if the mechanism related to the introduction of suction / inert gas is omitted on the high temperature side drying device 200 side. Absent. Further, the control unit 35 that controls the heater 30 is also omitted.

In this high temperature side drying device 200, the heater 30 is always turned on, and the substrate 1 is housed and held in a drying temperature environment higher than the predetermined drying temperature.

The substrate transfer means 300 is constituted by a well-known substrate transfer robot, and the substrates accommodated and held in the low temperature side drying device 100 with the lid 20 open on the low temperature side drying device 100 side. 1 is held and conveyed to the high temperature side drying device 200 side, and the high temperature side drying device 20
On the 0 side, the substrate 1 is housed and arranged in the high temperature side drying device 200 with the lid 220 opened.

The operation control of the substrate transfer means 300 is performed by the control section 350 having the timer circuit 351 built therein.

Similar to the above-mentioned control unit 35, the control unit 350 is composed of a general microcomputer, and at least during the drying process, the substrate 1 is dried from the low temperature side drying device 100 side to the high temperature side drying device. The operation of the substrate transfer means 300 is controlled so that the substrate is transferred to the 200 side.

In the present embodiment, the control unit 350 measures the elapsed time after the drying process is started by the timer circuit 36, and after the preset time has elapsed from the start of the drying process, the substrate 1 is dried on the low temperature side. It is conveyed from the apparatus 100 side to the high temperature side drying apparatus 200 side.

<Operation of Film Forming Liquid Drying Device> The operation of the film forming liquid drying device will be described.

First, the substrate 1 coated with the resist solution is conveyed into the low temperature side drying device 100. Low temperature side dryer 10
At 0, the drying is performed at a relatively low temperature. That is, in the flowchart shown in FIG. 4 described in the first embodiment, step S1 to step S
The processes up to 3 are performed in the low temperature side drying device 100.

When a preset pre-drying time elapses after starting the drying process, the substrate carrying means 300 carries the substrate 1 from the low temperature side drying device 100 side to the high temperature side drying device 200 side. That is, in the flowchart shown in FIG. 4, instead of step S4 of turning on the heater 30 to raise the temperature, the substrate 1 is dried on the high temperature side drying device 2 instead of the step S4.
The operation of switching to 00 is performed.

The pre-drying time at the start of processing is set in the same manner as described in the first embodiment.

On the high temperature side drying device 200 side, the heater 30 is constantly turned on to set a relatively high drying temperature. Then, when the substrate 1 is transferred into the high temperature side drying device 200, the substrate 1 is dried at a relatively high drying temperature, and after the transfer of the substrate 1, when a preset complete drying time elapses, The substrate 1 is taken out from the high temperature side drying device 200 side, and the drying process of the resist solution is completed. That is, FIG.
Of the flowchart shown in step S5, S6
The above process is performed in the high temperature side drying device 200.

The drying temperature and the complete drying time here are set in the same manner as described in the first embodiment.

Even with the film-forming liquid drying apparatus according to the second embodiment having the above-described structure, the film-forming liquid drying process is performed at a relatively low temperature until the middle of the film-forming liquid drying process, and thereafter, the film-forming liquid drying device is relatively dried. Since the film is dried at a high temperature, the film-forming liquid applied on the substrate can be dried in the shortest possible time so that the film thickness after drying is as uniform as possible.

Further, on the low temperature side drying device 100 side, the gas in the container 10 is sucked to perform the drying under the condition that the pressure is lower than the atmospheric pressure, so that the drying can be performed in a shorter time. .

Further, on the low temperature side drying device 100 side, while the gas in the container 10 is sucked, while the gas from the outside is introduced into the container 10, the solvent of the resist solution evaporates in the container 10. Then, the gas that is close to the saturated state can be replaced with the gas from the outside, and from this point, the drying can be performed in a shorter time.

In particular, in the first embodiment, when the substrate 1 is repeatedly dried, it is necessary to wait for the heater 30 and the like to cool, but in the second embodiment, Since the low temperature side drying device 100 that performs drying at a relatively low temperature and the high temperature side drying device 200 that performs drying at a relatively high temperature are separated, such a cooling time is not required, and a plurality of substrates 1 can be quickly processed. Drying process can be performed.

<Modification of Second Embodiment> Incidentally, in the film-forming-solution drying apparatus according to the second embodiment, as in the modification according to the first embodiment, shown in FIG. As in the case of the film-forming liquid drying apparatus of the modification, the timing of transporting the substrate 1 from the low temperature side drying apparatus 100 side to the high temperature side drying apparatus 200 side may be controlled according to the fluctuation of the atmospheric pressure around the substrate 1. Good.

That is, in this film-forming liquid drying apparatus, an atmospheric pressure detecting section 144B capable of detecting the atmospheric pressure in the accommodation space 13 therein is provided on the low temperature side drying apparatus 100 side, and a detection signal from this atmospheric pressure detecting section 144B is provided. Is output to the control unit 350B. The atmospheric pressure detector 144B detects the atmospheric pressure in the housing space 13 to detect the atmospheric pressure around the substrate 1.

The controller 350B controls the transfer timing of the substrate transfer means 300 based on the detection signal. Specifically, the control unit 350B operates the substrate transfer means 300 when the atmospheric pressure falls below a preset threshold value or when the reduction rate of the atmospheric pressure exceeds a preset speed. The substrate 1 on the high temperature side drying device 200.
Transport to.

Even in this case, the same effect as in the case of the second embodiment can be obtained.

In addition, since the drying temperature is raised according to the fluctuation of the atmospheric pressure in the container 10, the coating condition of the resist solution and the drying conditions such as the ambient temperature of the container 10 correspond to the fluctuation. Appropriate drying process can be performed.

At least one side of the low temperature side drying device 100 and the high temperature side drying device 200 is provided with the container 1
0 and 210 are provided, and different drying temperatures are used.
The substrate 1 may be sequentially transferred from the low temperature side to the high temperature side, and the temperature for drying the substrate 1 may be gradually increased.

{Other Modifications} Although the embodiments of the present invention have been described above, the present invention is not limited to the above examples.

For example, although the semiconductor wafer is exemplified as the substrate 1, it may be a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disc, or the like.

The film forming liquid applied to the substrate 1 may be an interlayer insulating material, a low dielectric material, a ferroelectric material, a wiring material amount, an organic metal material, a metal paste, etc. in addition to the resist liquid. Good.

Further, the present invention is not limited to the one in which the film forming liquid is applied to the substrate 1 by the scan coating method, and may be applied to the one in which the film forming liquid is applied to the substrate 1 and remains in the liquid state.

[0103]

According to the film-forming-liquid drying apparatus of the present invention configured as described above, since the film-forming-liquid drying apparatus is dried at a relatively low temperature until the middle of the film-forming-liquid drying process. Thermal convection of the film-forming liquid in the drying process is prevented, and the film thickness after drying can be made as uniform as possible. Further, in the course of the film-forming liquid drying process, when the drying progresses to a certain extent and heat convection does not easily occur, the drying is performed at a relatively high temperature.
It can be dried in the shortest possible time.

Further, when the drying temperature is controlled according to the fluctuation of the atmospheric pressure of the substrate as described in claim 3, an appropriate drying process is performed in accordance with the coating condition of the film forming liquid and the fluctuation of the drying conditions. You can do it.

Further, in the film-forming-solution drying apparatus according to the fourth aspect, since the gas can be sucked in the airtight container to perform the drying under the pressure lower than the atmospheric pressure, the drying time can be shortened. It can be dried.

Further, according to the film-forming liquid drying apparatus of the fifth aspect, while the gas in the airtight container is sucked, the gas is supplied from the outside into the airtight container to form a film in the airtight container. Since the gas in which the solvent of the liquid has evaporated can be replaced with the gas from the outside, drying can be performed in a shorter time also from this point.

Further, according to the film-forming-solution drying device of the sixth to tenth aspects, since the film-forming-liquid drying device is dried at a relatively low temperature in the low-temperature-side drying device until the middle of the film-forming liquid drying process, the drying process is performed. The thermal convection of the film-forming solution in the above step is prevented, and the film thickness after drying can be made as uniform as possible. Also, during the drying process of the film-forming liquid, when the drying progresses to some extent and heat convection does not occur easily, the drying is performed at a relatively high temperature in the high temperature side drying device. You can

Further, when the timing of transporting the substrate to the high temperature side drying device is controlled in accordance with the variation of the atmospheric pressure of the substrate as in the eighth aspect, the coating condition of the film forming liquid and the variation of the drying condition may be changed. Correspondingly, an appropriate drying process can be performed.

In addition, in the film-forming-solution drying apparatus according to the ninth aspect, by sucking the gas in the airtight container, the drying can be performed under a pressure lower than the atmospheric pressure. Can be dried.

Further, according to the film-forming liquid drying apparatus of the tenth aspect, while the gas in the airtight container is sucked, the gas is supplied from the outside into the airtight container to form a film in the airtight container. Since the gas in which the solvent of the liquid has evaporated can be replaced with the gas from the outside, drying can be performed in a shorter time also from this point.

Further, according to the film-forming liquid drying method of the eleventh aspect, since the film-forming liquid is dried at a relatively low temperature until the film-forming liquid drying process, thermal convection of the film-forming liquid is prevented during the drying process. Thus, the film thickness after drying can be made as uniform as possible. In addition, since the drying is performed at a relatively high temperature when the drying progresses to some extent and heat convection hardly occurs during the film-forming liquid drying process, the drying can be performed in the shortest possible time.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing the overall configuration of a film-forming liquid drying device according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a main body of a container of the above film forming liquid drying apparatus.

FIG. 3 is a cross-sectional view showing an open state of a container of the above film forming liquid drying apparatus.

FIG. 4 is a flow chart showing the operation of the above film forming liquid drying apparatus.

FIG. 5 is a schematic cross-sectional view showing a modified example of the film-forming liquid drying device according to the first embodiment.

FIG. 6 is a diagram showing changes in time and atmospheric pressure after starting suction.

FIG. 7 is a schematic cross-sectional view showing the overall configuration of a film forming liquid drying apparatus according to a second embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view showing a modified example of the film-forming liquid drying device according to the second embodiment of the invention.

[Explanation of symbols]

1 substrate 5,5B Film forming liquid dryer 10 containers 11 Main body 13 accommodation space 19 Air suction hole 20 lid 22 Gas supply hole 30 heating heater 35, 35B control unit 36 timer circuit 40 vacuum pump 42 Inert gas supply source 44B atmospheric pressure detector 100 low temperature side dryer 144B atmospheric pressure detector 200 High temperature side dryer 210 containers 211 main body 220 lid 300 substrate transfer means 350 control unit 350B control unit 351 timer circuit

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) F26B 9/06 F26B 25/00 B 25/00 G03F 7/38 501 G03F 7/38 501 H01L 21/304 651M H01L 21/304 651 21/30 564Z (72) Inventor Hiroshi Kobayashi 1st Japan Screen Manufacturing Co., Ltd. (1) No. 1, Tenjin Kitamachi 4-chome, Tenjin Kitamachi, Kamikyo-ku, Kyoto, Japan 1 Hokugawa-dori Teranouchi 4 Tenma Kitamachi 1-chome, Kamikyo-ku, Kyoto F-Term (Reference) 2D H0996 AA25 CA13 DA10 3L113 AA01 AB02 AC67 BA34 CA08 CA10 DA01 DA24 4D075 BB24Z BB36Z BB56Z BB57Z BB93Z BB95Z CA23 CA48 DA08 DB13 DB14 DC22 DC24 DC27 EA07 EA14 EA45 4F042 AA02 AA07 AA08 AA10 BA01 BA06 BA19 DB04 DB09 DB17 DC01 DF25 D F29 5F046 JA27

Claims (11)

[Claims] 1. A film forming liquid drying apparatus for drying a film forming liquid applied to a substrate, comprising: substrate holding means for holding the substrate; and a drying temperature for the substrate held by the substrate supporting means. A film forming liquid drying apparatus including a possible drying temperature adjusting means, and a temperature adjusting control means for increasing the drying temperature by the drying temperature adjusting means during the drying process after the substrate is held by the substrate holding means. . 2. The apparatus for drying a film forming solution according to claim 1, further comprising a time measuring unit for measuring an elapsed time after the substrate is held by the substrate holding unit and the drying process is started, The control means controls the drying temperature by the drying temperature adjusting means on the basis of a time signal output from the time measuring means. 3. The film-forming liquid drying apparatus according to claim 1, further comprising: an atmospheric pressure detecting unit that can detect a peripheral atmospheric pressure of the substrate, which varies depending on a degree of drying of the film-forming liquid, and the temperature adjustment. The control unit controls the drying temperature by the temperature adjustment control unit on the basis of the atmospheric pressure detection signal from the atmospheric pressure detection unit. 4. The film-forming liquid drying device according to claim 1, wherein an airtight container for housing the substrate held by the substrate holding means in an airtight state, and the inside of the airtight container And a suction means for sucking the gas of 1. 5. The film-forming liquid drying device according to claim 4, further comprising a gas supply means for supplying a gas from the outside into the airtight container. 6. A film forming solution drying apparatus for drying a film forming solution applied to a substrate, comprising: a low temperature side drying apparatus having a substrate holding means for holding the substrate under a predetermined drying temperature environment, A high temperature side drying device having a substrate holding means for holding a substrate under a drying temperature environment higher than a predetermined drying temperature, and a substrate transportation for transporting the substrate held on the low temperature side drying device side to the high temperature side drying device And a transfer control unit that causes the substrate transfer unit to perform an operation of transferring the substrate to the high temperature side drying device during a drying process after the substrate is held on the low temperature side drying device side. Film forming liquid drying device. 7. The apparatus for drying a film forming solution according to claim 6, further comprising a time measuring means for measuring an elapsed time after the start of the drying process, and the transfer control means outputs from the time measuring means. A film-forming liquid drying device that controls the timing of transporting the substrate to the high-temperature-side drying device based on a timing signal. 8. The film-forming liquid drying device according to claim 6, wherein the low-temperature-side drying device is capable of detecting the atmospheric pressure around the substrate, which varies depending on the degree of drying of the film-forming liquid. The film forming liquid drying apparatus, wherein the transfer control means controls the timing of transferring the substrate to the high temperature side drying apparatus based on the atmospheric pressure detection signal from the atmospheric pressure detecting means. 9. The film-forming liquid drying device according to claim 6, wherein the low-temperature drying device includes an airtight container that accommodates a substrate in an airtight state, and an inside of the airtight container. A film forming liquid drying apparatus further comprising: a suction unit that sucks gas. 10. The film-forming liquid drying device according to claim 9, wherein the low-temperature-side drying device further includes a gas supply unit for supplying a gas from the outside into the airtight container. . 11. A method for drying a film-forming liquid applied to a substrate, comprising: a film-forming liquid applied to the substrate while the film-forming liquid applied to the substrate is being dried. A method for drying a film-forming liquid, which raises the drying temperature of.