JP3527868B2 - Heat treatment apparatus and heat treatment method for semiconductor substrate - Google Patents
Heat treatment apparatus and heat treatment method for semiconductor substrateInfo
- Publication number
- JP3527868B2 JP3527868B2 JP33046699A JP33046699A JP3527868B2 JP 3527868 B2 JP3527868 B2 JP 3527868B2 JP 33046699 A JP33046699 A JP 33046699A JP 33046699 A JP33046699 A JP 33046699A JP 3527868 B2 JP3527868 B2 JP 3527868B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- atmosphere
- oxygen concentration
- heat treatment
- closed container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Furnace Details (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウェハ等の
基板の表面に低誘電率（Low-k）層間絶縁膜を形成する
ための薬液を塗布し、その薬液を基板上に焼結する半導
体基板の熱処理装置及び熱処理方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor in which a chemical solution for forming a low dielectric constant (Low-k) interlayer insulating film is applied on the surface of a substrate such as a semiconductor wafer and the chemical solution is sintered on the substrate. The present invention relates to a substrate heat treatment apparatus and a heat treatment method.
【０００２】[0002]
【従来の技術】半導体ウェハ等の基板上に塗布されたレ
ジスト液、ＳＯＧ（Spin On Glass）等の薬液を基板上
で乾燥又は、焼結する熱処理工程は、従来、大気雰囲気
又は、それに近い高酸素濃度雰囲気で行われていた。2. Description of the Related Art A heat treatment process for drying or sintering a resist solution applied on a substrate such as a semiconductor wafer or a chemical solution such as SOG (Spin On Glass) on the substrate has hitherto been carried out in an air atmosphere or at a high temperature close to it. It was performed in an oxygen concentration atmosphere.
【０００３】従来の熱処理装置（ベーク装置）の一例を
図５に示す。このベーク装置では、ハウジング１により
形成される処理室２の基板受渡し位置Ａに対応して処理
室２を外気と遮断するシャッタ３を備えているが、特
に、処理室２内を密閉するように考慮されておらず、構
造上、処理室２は前述のごとく外気に開放されている。
処理室２内において、基板ベークのためのホットプレー
ト４は処理基板Ｗに対して下面側に配され、基板上部に
は同心円状外周部に窒素ガス（Ｎ2）の吐出口５が配さ
れ、上部中央には処理室２内の雰囲気を排出する排気口
６が配されている。An example of a conventional heat treatment apparatus (baking apparatus) is shown in FIG. This baking apparatus is provided with a shutter 3 which shields the processing chamber 2 from the outside air in correspondence with the substrate transfer position A of the processing chamber 2 formed by the housing 1. In particular, the inside of the processing chamber 2 is sealed. It is not taken into consideration, and because of the structure, the processing chamber 2 is open to the outside air as described above.
In the processing chamber 2, the hot plate 4 for baking the substrate is arranged on the lower surface side with respect to the processing substrate W, the nitrogen gas (N 2 ) discharge port 5 is arranged on the upper peripheral portion of the substrate in a concentric outer periphery, An exhaust port 6 for exhausting the atmosphere in the processing chamber 2 is arranged in the upper center.
【０００４】一般に薬液を塗布された基板は、図示され
ていないロボット等によって直ちにベーク装置の処理室
２内に搬入され、ベーク処理位置Ｂと基板受渡し位置Ａ
の間で昇降・停止可能であって予め基板受渡し位置Ａで
待機している基板支持ピン７上に置かれ、基板支持ピン
７がエアシリンダ８の作動で降下することにより、ベー
ク処理が始まる。ベーク処理後、処理基板Ｗは基板支持
ピン７により、基板受渡しレベルＡまで上昇し、前記ロ
ボットによりベーク装置より搬出され、次工程へ搬送さ
れる。Generally, the substrate coated with the chemical solution is immediately carried into the processing chamber 2 of the baking apparatus by a robot or the like (not shown), and the baking processing position B and the substrate transfer position A are transferred.
The substrate is placed on the substrate support pins 7 that can be lifted / stopped between them and is waiting in advance at the substrate transfer position A, and the substrate support pins 7 are lowered by the operation of the air cylinder 8 to start the baking process. After the bake processing, the processed substrate W is raised to the substrate delivery level A by the substrate support pins 7, is carried out from the baking device by the robot, and is carried to the next step.
【０００５】また、ベーク装置の他の例として、例え
ば、特開平１１−８１７５号公報に示されるように、ハ
ウジングによる一つの処理ケース内に、ベーク用のホッ
トプレートとベーク処理後の基板を冷却処理するクーリ
ングプレートとを備え、ホットプレートとクーリングプ
レートとの間で基板の移動を行うことで、ケース内に基
板を収納したままで、ベーキング処理のための昇温及び
クーリング処理のための降温を行うことができるように
し、また、ベーキング処理後に送風及び排気を行うこと
で、雰囲気温度を降下させ、基板の冷却効率を上げるよ
うにしている。この装置においては、基板の出し入れに
伴う気流の巻き込みによりケース内の温度変化があって
も、温度が安定するまでの間、基板を待機させることが
でき、ホットプレートによる加熱温度が安定してから基
板の加熱を行うことが可能で、昇温・降温時の基板での
熱分布ムラの低減、処理の不均一性の低減等が図れる。As another example of the baking apparatus, for example, as shown in Japanese Patent Laid-Open No. 11-8175, a hot plate for baking and a substrate after baking are cooled in one processing case by a housing. It is equipped with a cooling plate for processing, and by moving the substrate between the hot plate and the cooling plate, it is possible to increase the temperature for the baking process and the temperature for the cooling process while the substrate is stored in the case. By performing air blowing and exhausting after the baking treatment, the ambient temperature is lowered and the cooling efficiency of the substrate is increased. In this device, even if there is a temperature change in the case due to the entrainment of the air flow associated with the loading and unloading of the substrate, the substrate can be put on standby until the temperature stabilizes, and after the heating temperature by the hot plate stabilizes. Since it is possible to heat the substrate, it is possible to reduce uneven heat distribution in the substrate during temperature rise / fall, reduce non-uniformity of processing, and the like.
【０００６】[0006]
【発明が解決しようとする課題】ところで、近年、半導
体デバイスの微細化に伴い、配線容量が下げられる低消
費電力化の可能な低誘電率（Ｌｏｗ−ｋ）層間絶縁膜
が、従来のＳＯＧに代わり有望視されている。この材料
は化学的性質上、高酸素濃度雰囲気（100ppm以上）で加
熱処理（200℃以上）を行うと、反応が過剰となって不
都合である。By the way, in recent years, with the miniaturization of semiconductor devices, a low dielectric constant (Low-k) interlayer insulating film capable of lowering wiring capacitance and reducing power consumption has been replaced by a conventional SOG. Instead, it looks promising. This material
Due to its chemical nature, heat treatment (200 ° C or higher) in a high oxygen concentration atmosphere (100ppm or higher) causes an excessive reaction, which is inconvenient.
【０００７】上述した従来技術による熱処理装置や上記
公報に示されるようなベーク装置は、一般の薬液塗布後
の熱処理を行うものであることから、構造上、外気と処
理室内は完全に遮断されておらず、処理中にも各所の開
口部から大気雰囲気が処理室内へ流入してしまう。ま
た、加熱処理前後において、基板の温度を薬液の大気開
放可能温度域以内に抑えることは容易ではない。そのた
め、低誘電率（Low-k）層間絶縁膜の薬液の場合は、反
応が過剰になり、適正な熱処理が行えない。The above-described heat treatment apparatus according to the prior art and the baking apparatus as disclosed in the above publication perform the heat treatment after the general application of the chemical liquid, so that the outside air and the processing chamber are completely cut off from the structure. Therefore, the air atmosphere flows into the processing chamber through the openings at various places during the processing. Further, before and after the heat treatment, it is not easy to keep the temperature of the substrate within the temperature range in which the chemical solution can be opened to the atmosphere. Therefore, in the case of a chemical solution for a low dielectric constant (Low-k) interlayer insulating film, the reaction becomes excessive and proper heat treatment cannot be performed.
【０００８】しかも、基板搬出入時のシャッタ開閉に伴
い流入する大気雰囲気の流量に対して、処理基板上部よ
り排出されるＮ2流量が少ないうえ、外気に対して開口
部が多い構造のため、効率良く処理室内の大気雰囲気を
置換することができない（処理室内の雰囲気を低酸素濃
度に置換するという考えがない）。また、基板上部より
Ｎ2を排出する構成においては、加熱処理後の冷却時間
を短くするために温度勾配を上げるべくＮ2流量を多く
すると、基板表面の膜厚分布に悪影響を及ぼす。さらに
は、処理室内の雰囲気を低酸素濃度に保持して加熱処理
を行うには、加熱処理中も不活性ガスによるパージ動作
を行う必要があることが明らかになったが、その気流が
基板に直接に当たると、処理ムラの原因となる。Moreover, since the N 2 flow rate discharged from the upper part of the processing substrate is small with respect to the flow rate of the atmospheric atmosphere flowing in with the opening and closing of the shutter when the substrate is loaded and unloaded, the structure has many openings for the outside air. The atmosphere in the processing chamber cannot be efficiently replaced (there is no idea to replace the atmosphere in the processing chamber with a low oxygen concentration). Further, in the configuration in which N 2 is discharged from the upper part of the substrate, if the N 2 flow rate is increased to increase the temperature gradient in order to shorten the cooling time after the heat treatment, the film thickness distribution on the substrate surface is adversely affected. Furthermore, it was revealed that in order to perform heat treatment while keeping the atmosphere in the processing chamber at a low oxygen concentration, it was necessary to perform a purging operation with an inert gas during the heat treatment. If it hits directly, it will cause uneven processing.
【０００９】本発明は、上記課題に鑑みてなされたもの
で、処理室内雰囲気の低酸素濃度化を容易に実現し、従
来では困難であった、基板上に形成する低誘電率（Ｌｏ
ｗ−ｋ）層間絶縁膜の材料を適正に加熱処理することが
でき、しかも、加熱及び冷却の処理時間の短縮が図れ、
また、処理室内雰囲気の低酸素濃度への置換のためのパ
ージが基板処理の均一化に影響を与えることのない半導
体基板の熱処理装置及び熱処理方法を提供することを目
的とする。The present invention has been made in view of the above problems, and easily achieves a low oxygen concentration in the atmosphere of the processing chamber, and it has been difficult to form a low dielectric constant (Lo) formed on a substrate, which has been difficult in the past.
w-k) The material of the interlayer insulating film can be appropriately heat-treated, and the heating and cooling processing time can be shortened.
It is another object of the present invention to provide a heat treatment apparatus and a heat treatment method for a semiconductor substrate, in which the purging for replacing the atmosphere in the processing chamber with a low oxygen concentration does not affect the uniformity of the substrate processing.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
に本発明は、半導体基板の表面に低誘電率（Ｌｏｗ−
ｋ）層間絶縁膜を形成するための薬液が塗布され、この
薬液を低酸素濃度雰囲気で加熱処理して焼結させる半導
体基板の熱処理装置において、被処理基板の受渡しに際
してのシャッタ開閉時以外は大気と遮断され、一連の熱
処理を低酸素濃度雰囲気で行うための密閉容器と、該密
閉容器内の高酸素濃度の大気雰囲気を置換して、低酸素
濃度にするために密閉容器内に不活性ガスを吐出する吐
出手段、及び容器内雰囲気を排気する排気手段と、該密
閉容器内に設けられ、前記被処理基板に対して上面側に
位置し前記基板を加熱処理するベークプレートと、該密
閉容器内に設けられ、前記被処理基板に対して下面側に
位置し、加熱処理後の高温の基板を焼結された薬液が高
酸素濃度の大気雰囲気に開放可能な温度域まで冷却処理
するクールプレートと、該密閉容器内に設けられ、前記
加熱処理位置と冷却処理位置の間で基板を水平に保った
まま昇降が可能であって、さらに中間位置で基板の受渡
しに際して停止可能な基板支持部材とを備え、前記吐出
手段は、前記クールプレートの下方周囲に配置されたチ
ューブに複数の穿孔からなる吐出口を有し、前記排気手
段は、前記ベークプレートの周囲から上方に排気する排
気口を有し、前記吐出手段及び排気手段は、前記加熱処
理時にも、密閉容器内雰囲気を低酸素濃度に保持するた
めに不活性ガスによるパージ動作を行えるよう構成した
ものである。 In order to achieve the above object, the present invention provides a low dielectric constant (Low-) on the surface of a semiconductor substrate.
k) In a heat treatment apparatus for a semiconductor substrate, in which a chemical solution for forming an interlayer insulating film is applied, and the chemical solution is heat-treated and sintered in a low oxygen concentration atmosphere, the atmosphere other than when the shutter is opened / closed when the substrate to be processed is delivered. And a closed container for performing a series of heat treatments in a low oxygen concentration atmosphere, and an atmosphere of a high oxygen concentration in the closed container are replaced to obtain a low oxygen content.
Discharge means for discharging an inert gas into the closed container to adjust the concentration , and exhaust means for exhausting the atmosphere in the container, and the discharge means provided in the closed container and located on the upper surface side with respect to the substrate to be processed. A bake plate for heat-treating the substrate and a chemical solution which is provided in the closed container and is located on the lower surface side with respect to the substrate to be treated and which is obtained by sintering the high-temperature substrate after the heat treatment is high.
A cool plate that cools down to a temperature range where it can be opened to an atmosphere of oxygen concentration and a closed container that can be raised and lowered while keeping the substrate horizontal between the heat treatment position and the cooling treatment position. Te, further comprising a substrate supporting member can be stopped during transfer of the substrate at the intermediate position, the discharge
Means are provided in a chisel arranged around the lower side of the cool plate.
The tube has a discharge port consisting of multiple holes,
The stages are exhausts that exhaust upward from around the bake plate.
The discharge means and the exhaust means have an air vent, and the heating means
At the same time, keep the atmosphere in the closed container at a low oxygen concentration.
In order to perform the purge operation with an inert gas,
It is a thing.
【００１１】上記構成においては、密閉処理室内はその
雰囲気が不活性ガスで置換され、もって低酸素濃度雰囲
気とされ、従って、半導体基板表面に塗布された低誘電
率（Ｌｏｗ−ｋ）層間絶縁膜を形成するための薬液を低
酸素濃度雰囲気で加熱処理することが可能となり、ま
た、加熱処理前後における基板の温度を薬液が高酸素濃
度の大気雰囲気に開放可能な温度域以内に抑えることが
可能となり、過剰反応になることなく適正な処理が行え
る。In the above structure, the atmosphere in the hermetically sealed processing chamber is replaced with an inert gas, so that the atmosphere has a low oxygen concentration. Therefore, the low dielectric constant (Low-k) interlayer insulating film applied to the surface of the semiconductor substrate. Low chemicals to form
It becomes possible to perform heat treatment in an oxygen concentration atmosphere, and the temperature of the substrate before and after the heat treatment can be adjusted to a high oxygen concentration.
It is possible to keep the temperature within a temperature range that can be released into the air atmosphere , and proper processing can be performed without excessive reaction.
【００１２】[0012]
【００１３】また、低酸素濃度に保持するために加熱処
理時とその前後に不活性ガスによるパージ動作を行うこ
とが望ましいが、その気流が被処理基板に直接当ること
がないので、処理ムラを起こすことがなく、基板の均一
な加熱、冷却処理が可能となり、しかも、処理時間の短
縮化につながる。 Further, this purging operation by the inert gas during the heating process and before and after to hold the low oxygen concentration
However , since the air flow does not directly hit the substrate to be processed , there is no processing unevenness and the substrate is uniform.
Heating and cooling can be performed, and the processing time can be shortened.
【００１４】さらに、本発明は、半導体基板の表面に低
誘電率（Ｌｏｗ−ｋ）層間絶縁膜を形成するための薬液
を塗布した後、この薬液を低酸素濃度雰囲気で加熱処理
して焼結させる半導体基板の熱処理方法において、被処
理基板を密閉容器の基板搬出入用の開口を通して密閉容
器内へ挿入し、予め基板の受渡し位置で待機している基
板支持部材上に該基板を置くステップと、基板搬出入用
の開口に設けられたシャッタを閉じた後、基板支持部材
が下降し、該基板をクールプレートにより冷却処理する
位置で待機させることにより予め所定温度まで昇温され
たベークプレートの放射熱による基板の温度上昇を抑制
するステップと、前記冷却処理位置での待機中に、前記
クールプレートの下方周囲から不活性ガスを吐出し、前
記ベークプレートの周囲から上方に排気することで、密
閉容器内雰囲気を低酸素濃度に保持するためのパージを
行い、基板の受渡しに際してシャッタ開閉により密閉容
器内に流入した高酸素濃度の大気雰囲気を不活性ガスで
置換し、密閉容器内の酸素濃度を所定の濃度まで下げる
ステップと、密閉容器内の酸素濃度が所定の濃度まで降
下した後、前記基板支持部材はベークプレートによる加
熱処理位置まで上昇し、所定時間、基板を加熱処理する
ステップと、前記加熱処理の後、基板支持部材は再度、
冷却処理位置まで下降し、焼結された薬液が高酸素濃度
の大気雰囲気に開放可能な温度域まで基板の温度を下げ
るステップと、基板温度が高酸素濃度の大気雰囲気に開
放可能な温度域まで降下した後、該基板を基板支持部材
により受渡し位置まで上昇させ、シャッタが開かれた
後、密閉容器より搬出するステップとから成るものであ
る。この方法においても、上記と同等の作用が得られ
る。 Further, according to the present invention, after applying a chemical solution for forming a low dielectric constant (Low-k) interlayer insulating film on the surface of a semiconductor substrate, the chemical solution is heat-treated in a low oxygen concentration atmosphere.
In the method for heat treating a semiconductor substrate, the substrate to be processed is inserted into the hermetic container through the substrate loading / unloading opening of the hermetic container, and the substrate is preliminarily waited at the substrate transfer position. And the shutter provided in the opening for loading and unloading the substrate is closed, the substrate supporting member is lowered, and the substrate is preliminarily heated to a predetermined temperature by standing by at a position where the cool plate cools the substrate. and step of suppressing the temperature rise of the substrate due to radiation heat baking plates, while waiting in the cooling processing position, wherein
Inert gas is discharged from the lower periphery of the cool plate,
By exhausting air from around the bake plate,
Purge to keep the atmosphere in the closed container at a low oxygen concentration.
Performed and closed the shutter by opening and closing the shutter when delivering the substrate.
After replacing the atmosphere of high oxygen concentration flowing into the vessel with an inert gas, the step of lowering the oxygen concentration in the closed container to a predetermined concentration, and after the oxygen concentration in the closed container drops to the predetermined concentration, The substrate supporting member is elevated to the heat treatment position by the bake plate, and the substrate is heat treated for a predetermined time, and after the heat treatment, the substrate supporting member is again
The oxygen concentration of the sintered chemical liquid descends to the cooling processing position.
The step of lowering the temperature of the substrate to a temperature range in which the substrate can be opened to the atmosphere, and the substrate temperature is lowered to a temperature range in which the substrate can be opened to the atmosphere of high oxygen concentration, and then the substrate is supported by the substrate supporting member. After raising the shutter to the delivery position and opening the shutter, it is carried out from the closed container. Also in this method, the same effect as above can be obtained.
【００１５】[0015]
【００１６】上記処理方法において、クールプレートの
下方周囲から不活性ガスを吐出し、ベークプレートの周
囲から上方に排気することで、密閉容器内雰囲気を低酸
素濃度に保持するためのパージを行い、このパージは冷
却処理位置での待機中に続いて加熱処理時にも行うもの
とすることが望ましい。In the above treatment method, an inert gas is discharged from the lower periphery of the cool plate and exhausted upward from the periphery of the bake plate to perform purging for keeping the atmosphere in the closed container at a low oxygen concentration, It is desirable that this purging be performed during the heat treatment subsequent to the standby at the cooling treatment position.
【００１７】[0017]
【発明の実施の形態】本発明の一実施形態による半導体
基板の熱処理装置について図面を参照して説明する。図
１乃至図３において、熱処理装置（ベーク装置）は、ハ
ウジング（筐体）１内に密閉容器（処理室とも言う）１
１を備え、この密閉容器１１は、円筒側壁を有するチャ
ンバ１２と、このチャンバ１２の上部にトップベース１
３と、下部にボトムベース１４を配置することによって
区画形成されている。この処理室１１の空間を図２に波
線サークルで示している。チャンバ１２の側面の基板受
渡し位置Ａ（図３）には、シリコンウエーハ等の基板Ｗ
を処理室内に搬出入するための開口１５が設けられてい
るが、基板搬出入時以外は処理室内と外気を遮断するた
めのシャッタ１６が設けられている。BEST MODE FOR CARRYING OUT THE INVENTION A heat treatment apparatus for a semiconductor substrate according to an embodiment of the present invention will be described with reference to the drawings. 1 to 3, a heat treatment apparatus (baking apparatus) includes a closed container (also referred to as a processing chamber) 1 in a housing (housing) 1.
1, the closed container 11 includes a chamber 12 having a cylindrical side wall, and a top base 1 on the upper portion of the chamber 12.
3 and the bottom base 14 is arranged in the lower part to form a partition. The space of the processing chamber 11 is shown by a wavy circle in FIG. At the substrate transfer position A (FIG. 3) on the side surface of the chamber 12, a substrate W such as a silicon wafer is provided.
An opening 15 is provided for loading and unloading into and from the processing chamber, but a shutter 16 is provided to shut off the outside air from the processing chamber except when the substrate is loaded and unloaded.
【００１８】処理室内上部にベークプレート１７、処理
室内底部にクールプレート１８がそれぞれ配されてい
る。ベークプレート１７とクールプレート１８の間隔
は、処理する薬液、基板の種類によって可変とし、調整
できる機構を付加してもよい。また、処理室内上部にク
ールプレート１８、処理室内底部にベークプレート１７
を配しても同様の効果が得られるが、図示した本実施形
態のような配置の方が、対流を抑え、昇降温時の効率を
上げ、温度ムラを防止すると共に昇華物対策が図れる点
では優れている。A bake plate 17 is arranged at the upper part of the processing chamber, and a cool plate 18 is arranged at the bottom of the processing chamber. The distance between the bake plate 17 and the cool plate 18 may be varied depending on the type of chemical solution to be processed and the type of substrate, and a mechanism that can be adjusted may be added. Further, a cool plate 18 is provided on the upper part of the processing chamber and a bake plate 17 is provided on the bottom part of the processing chamber.
Although the same effect can be obtained by arranging the above, the arrangement as in the illustrated embodiment can suppress convection, increase the efficiency during temperature increase / decrease, prevent temperature unevenness, and prevent sublimates. Is better then.
【００１９】ベークプレート１７は、トップベース１３
及び、チャンバ１２に対して所定の隙間をあけて取付け
られており、トップベース１３中央上部の開口（排気
口）１９より、ベークプレート１７の外周側部を通して
処理室１１内の雰囲気を排気可能な構造（排気手段）と
なっている。本実施形態ではトップベース１３を水冷却
しており、ベークプレート１７が極めて高温になるた
め、ベーク装置外への影響を考慮して処理室を形成する
筐体にこのような冷却機構を付加することは有効であ
る。ボトムベース１４については、水冷又はペルチェ素
子等のサーモモジュールによる冷却を行う。The bake plate 17 is a top base 13.
Also, it is attached to the chamber 12 with a predetermined gap, and the atmosphere in the processing chamber 11 can be exhausted through the opening (exhaust port) 19 in the upper center of the top base 13 through the outer peripheral side portion of the bake plate 17. It has a structure (exhaust means). In the present embodiment, the top base 13 is water-cooled, and the bake plate 17 becomes extremely hot. Therefore, such a cooling mechanism is added to the housing forming the processing chamber in consideration of the influence on the outside of the baking apparatus. That is valid. The bottom base 14 is cooled by water or a thermo module such as a Peltier element.
【００２０】基板支持ピン２０は、クールプレート１８
下部より該クールプレート１８を貫通して例えば３本設
けられ、処理室１１外に昇降駆動機構２１を持つ。この
昇降駆動機構２１により、支持ピン２０で支持される基
板Ｗを処理室１１内のベーク処理位置Ｃ（図３）とクー
ル処理位置Ｂ（図３）の間で昇降・停止させることがで
きる。昇降駆動機構２１は、基板受渡し位置Ａでの停止
も可能なように、異なるストロークの２つの空圧シリン
ダ２１ａ，２１ｂを直列に連結した構造となっている。
これらシリンダ２１ａ，２１ｂの動作はアーム（その動
きを矢印方向で示している）を介して基板支持ピン２０
に伝達される。なお、昇降駆動機構２１は、本実施形態
の構成に限られず、ベーク処理位置Ｃとクール処理位置
Ｂの間で基板Ｗを自在に昇降・停止させることができる
ようにボールねじ軸と電動モータを用いてもよい。The substrate support pin 20 is used for the cool plate 18
For example, three cool plates 18 are provided from the bottom to penetrate the cool plate 18, and an elevating drive mechanism 21 is provided outside the processing chamber 11. By the lifting drive mechanism 21, the substrate W supported by the support pins 20 can be lifted and stopped between the bake processing position C (FIG. 3) and the cool processing position B (FIG. 3) in the processing chamber 11. The lift drive mechanism 21 has a structure in which two pneumatic cylinders 21a and 21b having different strokes are connected in series so that the lift drive mechanism 21 can also be stopped at the substrate transfer position A.
The operation of these cylinders 21a and 21b is performed by the arm (the movement is shown in the direction of the arrow) of the substrate support pin 20.
Be transmitted to. The lifting drive mechanism 21 is not limited to the configuration of this embodiment, and includes a ball screw shaft and an electric motor so that the substrate W can be freely lifted and stopped between the bake processing position C and the cool processing position B. You may use.
【００２１】クールプレート１８の外周部下方には不活
性ガスとしてＮ2を処理室内に吐出するノズル２２（吐
出手段の吐出口）が設けられており、これにより処理室
１１内雰囲気の低酸素濃度化を図る。ノズル２２はリン
グ状に配したＳＵＳチューブに複数の同心円上に開けら
れた穿孔からなり、パージされる気流が基板Ｗに直接に
当たることがないように形成されている。前記Ｎ2の吐
出及び処理室１１内雰囲気の排気、すなわち不活性ガス
によるパージ動作は、処理室１１内雰囲気を低酸素濃度
に保持するために、加熱処理前後の待機時は勿論のこと
加熱処理時にも行う。本実施形態の吐出手段の構成によ
り、不活性ガスによるパージ動作の気流が直接に基板に
当たることがなくなるので、基板処理の均一性に影響を
与えることがなく、また、処理時間の短縮につながる。Below the outer periphery of the cool plate 18, there is provided a nozzle 22 (a discharge port of a discharge means) for discharging N 2 as an inert gas into the processing chamber, whereby a low oxygen concentration in the atmosphere inside the processing chamber 11 is provided. Try to change. The nozzle 22 is formed of a plurality of concentric holes formed in a ring-shaped SUS tube and is formed so that the purged airflow does not directly hit the substrate W. In order to maintain the atmosphere in the processing chamber 11 at a low oxygen concentration, the N 2 discharge and the exhaust of the atmosphere in the processing chamber 11, that is, the purging operation are performed not only in the standby state before and after the thermal processing but also in the heat treatment. Also sometimes. With the configuration of the discharging means of the present embodiment, the air flow of the purging operation by the inert gas does not directly hit the substrate, so that the uniformity of the substrate processing is not affected and the processing time is shortened.
【００２２】上記のように構成されたベーク装置による
半導体基板の熱処理方法について図４を参照して説明す
る。
＜基板搬入＞薬液を塗布された基板は、直ちにロボット
等によってベーク装置内に搬送され、処理室１１のシャ
ッタ１６の開と同時に、予め基板受渡し位置Ａで待機し
ている基板支持ピン２０上に置かれる。＜処理前待機＞
本実施形態のようにベーク処理部が被処理基板Ｗに対し
て上面側に配され、クール処理部が該基板Ｗに対して下
面側に配されている場合、シャッタ１６の閉後、処理室
１１内の酸素濃度が所定の濃度に下がるまで、基板支持
ピン２０が降下し、基板Ｗをクール処理位置Ｂで待機さ
せることにより、予め所定温度まで昇温されたベークプ
レート１７の放射熱による基板Ｗの温度上昇を抑制す
る。A method of heat-treating a semiconductor substrate using the baking apparatus configured as described above will be described with reference to FIG. <Substrate Loading> The substrate coated with the chemical solution is immediately transferred into the baking device by a robot or the like, and at the same time when the shutter 16 of the processing chamber 11 is opened, it is preliminarily placed on the substrate support pins 20 waiting at the substrate transfer position A. Placed. <Wait before processing>
When the bake processing unit is arranged on the upper surface side with respect to the substrate W to be processed and the cool processing unit is arranged on the lower surface side with respect to the substrate W as in the present embodiment, after the shutter 16 is closed, the processing chamber is closed. The substrate support pins 20 are lowered until the oxygen concentration in 11 drops to a predetermined concentration, and the substrate W is kept in the cool processing position B in a standby state. Suppress W temperature rise.
【００２３】＜処理＞クール処理位置Ｂでの待機中に基
板受渡し時のシャッタ１６の開閉により流入した大気雰
囲気をＮ2で置換し、処理室１１内の酸素濃度を所定の
濃度（１０ｐｐｍ程度）まで下げる（その間約４０乃至
６０秒）。酸素濃度が所定の濃度まで降下した後、基板
支持ピン２０はベーク処理位置Ｃまで上昇し、所定時間
（約６０秒）、被処理基板Ｗを３００℃以上の高温で加
熱処理する。
＜処理後待機＞ベーク処理後、基板支持ピン２０は再度
クール処理位置Ｂまで下降し、薬液の大気開放可能な温
度域（約２００℃以下）まで基板Ｗの温度を下げる。
＜基板搬出＞基板温度が大気開放可能な温度域まで降下
した後、該被処理基板Ｗは基板支持ピン２０により、受
渡し位置Ａまで上昇し、シャッタ１６の開と同時に、前
記ロボットによりベーク装置より搬出され、次工程へ搬
送される。<Processing> During the standby at the cool processing position B, the atmosphere inflowing by opening and closing the shutter 16 during substrate transfer is replaced with N 2 , and the oxygen concentration in the processing chamber 11 is set to a predetermined concentration (about 10 ppm). Until about 40 to 60 seconds. After the oxygen concentration drops to a predetermined concentration, the substrate support pin 20 moves up to the bake processing position C, and heats the substrate W to be processed at a high temperature of 300 ° C. or higher for a predetermined time (about 60 seconds). <Standby After Treatment> After the bake treatment, the substrate support pins 20 are lowered again to the cool treatment position B, and the temperature of the substrate W is lowered to a temperature range (about 200 ° C. or less) where the chemical solution can be released into the atmosphere. <Substrate Carry Out> After the substrate temperature has dropped to a temperature range in which it can be opened to the atmosphere, the substrate W to be processed is raised to the delivery position A by the substrate support pin 20, and at the same time when the shutter 16 is opened, the robot W is moved by the robot from the baking device. It is carried out and transported to the next process.
【００２４】なお、本発明は上記実施形態の構成に限定
されるものではなく、その要旨を逸脱しない範囲で種々
の変更が可能である。例えば、基板受渡し位置Ａとクー
ル処理位置Ｂとが同じレベルのものであっても構わな
い。また、チャンバ１２は、処理室１１を完全な密閉構
成とすることが望ましいが、それが難しい場合は、亜密
閉構成であっても構わない。また、層間絶縁膜は、多層
に亙って形成されるものであってもよい。The present invention is not limited to the configuration of the above embodiment, and various modifications can be made without departing from the spirit of the invention. For example, the substrate transfer position A and the cool processing position B may be at the same level. Further, it is desirable that the chamber 12 has a completely sealed configuration of the processing chamber 11, but if it is difficult, the chamber 12 may have a sub-sealed configuration. Further, the interlayer insulating film may be formed in multiple layers.
【００２５】以上のように本発明の半導体基板の熱処理
装置及び熱処理方法によれば、基板の処理室を密閉容器
として、該密閉容器内に不活性ガスの吐出手段及び排気
手段を有することにより、容易に処理室内の低酸素濃度
化を実現し、かつ処理前の雰囲気置換のための待機時に
基板の温度上昇を抑制し、適正な処理が可能であり、ま
た、基板がベーク処理前後の高酸素濃度の大気雰囲気中
にある時は、基板の温度を薬液の大気開放可能温度域以
内に抑えることが可能となり、もって低誘電率（Ｌｏｗ
−ｋ）層間絶縁膜の材料を基板上で加熱処理することが
可能となる。また、処理室の雰囲気置換及び、低酸素濃
度保持のためのパージ気流が直接に基板に当らない構成
とすることで、加熱処理中及びその前後にパージ動作を
行っても、基板処理の均一性に悪影響を与えることがな
い。As described above, according to the heat treatment apparatus and the heat treatment method of the semiconductor substrate of the present invention, the processing chamber of the substrate is used as a hermetically sealed container, and the inert gas is discharged and exhausted into the hermetically sealed container.
By having a means, it is possible to easily achieve a low oxygen concentration in the processing chamber, suppress the temperature rise of the substrate during standby for atmosphere replacement before processing, and perform proper processing.
Also, when the substrate is in an atmosphere of high oxygen concentration before and after baking, it is possible to keep the temperature of the substrate within the temperature range in which the chemical solution can be opened to the atmosphere, and thus the low dielectric constant (Low
-K) The material of the interlayer insulating film can be heat-treated on the substrate. Also, the atmosphere in the processing chamber should be replaced and the oxygen concentration should be low.
By purging airflow for degree holding it is configured not hit directly to the substrate, even if the purge operation during the heat treatment and before and after, it it is to adversely affect the uniformity of substrate processing
Yes .
【図面の簡単な説明】[Brief description of drawings]
【図１】 本発明の一実施形態による半導体基板の熱処
理装置の側面断面図である。FIG. 1 is a side sectional view of a semiconductor substrate heat treatment apparatus according to an embodiment of the present invention.
【図２】 同熱処理装置の正面断面図である。FIG. 2 is a front sectional view of the heat treatment apparatus.
【図３】 同熱処理装置の動作を説明するための側面断
面図である。FIG. 3 is a side sectional view for explaining the operation of the heat treatment apparatus.
【図４】 本発明の方法を説明するフロー図である。FIG. 4 is a flow diagram illustrating the method of the present invention.
【図５】 従来の熱処理装置の概略断面図である。FIG. 5 is a schematic sectional view of a conventional heat treatment apparatus.
１２ チャンバ １３ 密閉容器（処理室） １５ シャッタ開口部 １６ シャッタ １７ ベークプレート １８ クールプレート １９ 排気口 ２０ 基板支持ピン ２１ａ，２１ｂ 基板支持ピン昇降用シリンダ ２２ 不活性ガス吐出用ノズル Ｗ 処理基板 12 chambers 13 Airtight container (processing room) 15 Shutter opening 16 shutters 17 Bake plate 18 cool plate 19 exhaust port 20 substrate support pins 21a, 21b Substrate support pin lifting cylinder 22 Inert gas discharge nozzle W treated substrate
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/027 H01L 21/205 H01L 21/31 H01L 21/316 ─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/027 H01L 21/205 H01L 21/31 H01L 21/316
Claims (3)
ｋ）層間絶縁膜を形成するための薬液が塗布され、この
薬液を低酸素濃度雰囲気で加熱処理して焼結させる半導
体基板の熱処理装置において、 被処理基板の受渡しに際してのシャッタ開閉時以外は大
気と遮断され、一連の熱処理を低酸素濃度雰囲気で行う
ための密閉容器と、 該密閉容器内の高酸素濃度の大気雰囲気を置換して、低
酸素濃度にするために密閉容器内に不活性ガスを吐出す
る吐出手段、及び容器内雰囲気を排気する排気手段と、 該密閉容器内に設けられ、前記被処理基板に対して上面
側に位置し前記基板を加熱処理するベークプレートと、 該密閉容器内に設けられ、前記被処理基板に対して下面
側に位置し、加熱処理後の高温の基板を焼結された薬液
が高酸素濃度の大気雰囲気に開放可能な温度域まで冷却
処理するクールプレートと、 該密閉容器内に設けられ、前記加熱処理位置と冷却処理
位置の間で基板を水平に保ったまま昇降が可能であっ
て、さらに中間位置で基板の受渡しに際して停止可能な
基板支持部材とを備え、 前記吐出手段は、前記クールプレートの下方周囲に配置
されたチューブに複数の穿孔からなる吐出口を有し、前
記排気手段は、前記ベークプレートの周囲から上方に排
気する排気口を有し、前記吐出手段及び排気手段は、前
記加熱処理時にも、密閉容器内雰囲気を低酸素濃度に保
持するために不活性ガスによるパージ動作を行う ことを
特徴とする半導体基板の熱処理装置。1. A low dielectric constant (Low-) on the surface of a semiconductor substrate.
k) In a heat treatment apparatus for a semiconductor substrate, in which a chemical solution for forming an interlayer insulating film is applied, and the chemical solution is heat-treated and sintered in a low oxygen concentration atmosphere, in the atmosphere except when the shutter is opened / closed when the substrate to be processed is delivered. And a closed container for performing a series of heat treatments in a low oxygen concentration atmosphere, and an atmosphere of high oxygen concentration in the closed container are replaced ,
Discharge means for discharging an inert gas into the closed container to adjust the oxygen concentration , and exhaust means for exhausting the atmosphere in the container, and the discharge means provided in the closed container and located on the upper surface side with respect to the substrate to be processed. A bake plate for heat-treating the substrate, and a chemical liquid provided in the closed container, located on the lower surface side with respect to the substrate to be treated, and obtained by sintering a high-temperature substrate after the heat treatment.
A cool plate that cools down to a temperature range where it can be opened to an atmosphere of high oxygen concentration , and a closed container that can be raised and lowered while keeping the substrate horizontal between the heat treatment position and the cooling treatment position. a is further provided with a substrate support member can be stopped during transfer of the substrate at the intermediate position, the discharge means is located below the periphery of the cool plate
Has a discharge port consisting of multiple perforations
The exhaust means exhausts upward from around the bake plate.
The discharge means and the exhaust means are
Keep the atmosphere in a closed container at a low oxygen concentration during heat treatment.
A heat treatment apparatus for semiconductor substrates, characterized in that a purging operation with an inert gas is carried out to hold the semiconductor substrate.
ｋ）層間絶縁膜を形成するための薬液を塗布した後、こ
の薬液を低酸素濃度雰囲気で加熱処理して焼結させる半
導体基板の熱処理方法において、 被処理基板を密閉容器の基板搬出入用の開口を通して密
閉容器内へ挿入し、予め基板の受渡し位置で待機してい
る基板支持部材上に該基板を置くステップと、 基板搬出入用の開口に設けられたシャッタを閉じた後、
基板支持部材が下降し、該基板をクールプレートにより
冷却処理する位置で待機させることにより予め所定温度
まで昇温されたベークプレートの放射熱による基板の温
度上昇を抑制するステップと、 前記冷却処理位置での待機中に、前記クールプレートの
下方周囲から不活性ガスを吐出し、前記ベークプレート
の周囲から上方に排気することで、密閉容器内雰囲気を
低酸素濃度に保持するためのパージを行い、基板の受渡
しに際してシャッタ開閉により密閉容器内に流入した高
酸素濃度の大気雰囲気を不活性ガスで置換し、密閉容器
内の酸素濃度を所定の濃度まで下げるステップと、 密閉容器内の酸素濃度が所定の濃度まで降下した後、前
記基板支持部材はベークプレートによる加熱処理位置ま
で上昇し、所定時間、基板を加熱処理するステップと、 前記加熱処理の後、基板支持部材は再度、冷却処理位置
まで下降し、焼結された薬液が高酸素濃度の大気雰囲気
に開放可能な温度域まで基板の温度を下げるステップ
と、 基板温度が高酸素濃度の大気雰囲気に開放可能な温度域
まで降下した後、該基板を基板支持部材により受渡し位
置まで上昇させ、シャッタが開かれた後、密閉容器より
搬出するステップとから成ることを特徴とする半導体基
板の熱処理方法。2. A low dielectric constant (Low-) on the surface of a semiconductor substrate.
k) In a heat treatment method of a semiconductor substrate, in which a chemical solution for forming an interlayer insulating film is applied, and then the chemical solution is heat-treated and sintered in a low oxygen concentration atmosphere, a substrate to be processed is used for carrying in and out of a closed container. Inserting the substrate through the opening into the closed container, placing the substrate on the substrate support member that is waiting in advance at the substrate transfer position, and closing the shutter provided in the substrate loading / unloading opening,
A step of suppressing the temperature rise of the substrate due to the radiant heat of the bake plate which has been raised to a predetermined temperature by waiting the substrate supporting member at the position where the substrate is cooled and cooled by the cool plate; While waiting in the
Inert gas is discharged from the lower periphery, and the bake plate is
By exhausting upward from the surroundings,
To purge for holding the low oxygen concentration, high flowing in a sealed container by a shutter opening and closing time of transfer of the substrate
Substituting an atmosphere of oxygen concentration with an inert gas to reduce the oxygen concentration in the closed container to a predetermined concentration; and after the oxygen concentration in the closed container drops to a predetermined concentration, the substrate supporting member is a bake plate. And heating the substrate for a predetermined time by heating the substrate supporting member down to the cooling position again, and the sintered chemical solution is in an atmosphere of high oxygen concentration in the atmosphere.
The step of lowering the temperature of the substrate to a temperature range in which the substrate can be opened to the open position, and after the substrate temperature has dropped to a temperature range in which it can be opened to an atmosphere of high oxygen concentration , the substrate is raised by the substrate support member to the delivery position, and the shutter is released. And a step of unloading the semiconductor substrate from the closed container after being opened.
中に続いて前記加熱処理時にも行うことを特徴とする請
求項２に記載の半導体基板の熱処理方法。3. The contract according to claim 1, wherein the purging is also performed during the heat treatment subsequent to the standby at the cooling treatment position.
The heat treatment method for a semiconductor substrate according to claim 2 .
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| JP2003035810A (en) * | 2001-07-23 | 2003-02-07 | Dainippon Printing Co Ltd | Method for manufacturing color filter substrate and annealing furnace used in the method |
| JP4357400B2 (en) * | 2003-10-22 | 2009-11-04 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method |
| KR100782484B1 (en) | 2006-07-13 | 2007-12-05 | 삼성전자주식회사 | Heat treatment equipment |
| CN102460650B (en) | 2009-06-24 | 2014-10-01 | 佳能安内华股份有限公司 | Vacuum heating/cooling apparatus and method of producing magnetoresistive element |
| JP5786487B2 (en) * | 2011-06-22 | 2015-09-30 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method |
| CN103094157B (en) * | 2011-10-31 | 2015-07-15 | 细美事有限公司 | Substrate treating apparatus and substrate treating method |
| TWI481057B (en) * | 2012-05-24 | 2015-04-11 | Sunshine Pv Corp | Annealing device for a thin-film solar cell |
| CN105280518B (en) * | 2014-05-30 | 2020-09-08 | 盛美半导体设备(上海)股份有限公司 | Heat treatment device for semiconductor substrate |
| JP6896447B2 (en) | 2017-02-14 | 2021-06-30 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method |
| JP6811638B2 (en) * | 2017-02-14 | 2021-01-13 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and its equipment |
| JP6887265B2 (en) * | 2017-02-28 | 2021-06-16 | 株式会社Ｓｃｒｅｅｎホールディングス | Board processing equipment |
| JP6925213B2 (en) * | 2017-09-22 | 2021-08-25 | 東京エレクトロン株式会社 | Heat treatment equipment and heat treatment method |
| KR102386210B1 (en) * | 2018-10-15 | 2022-04-12 | 세메스 주식회사 | Method for cooling hot plate, Apparatus and Method for treating substrate |
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