JP3585215B2 - Substrate processing equipment - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention belongs to the technical field of a substrate processing apparatus that heats or cools a substrate such as a semiconductor wafer.
[0002]
[Prior art]
In a manufacturing process of a semiconductor device, an interlayer insulating film is formed by, for example, a SOD (Spin on Dielectric) system. In this SOD system, a coating film is spin-coated on a wafer and subjected to a chemical treatment or a heating treatment to form an interlayer insulating film.
[0003]
For example, when an interlayer insulating film is formed by a sol-gel method, first, a colloid of an insulating film material, for example, TEOS (tetraethoxysilane) is dispersed in an organic solvent on a semiconductor wafer (hereinafter, referred to as “wafer”). Supply the solution. Next, the wafer supplied with the solution is subjected to a gelling process, and then the solvent is replaced. Then, the wafer in which the solvent has been replaced is subjected to a heat treatment.
[0004]
In these series of steps, various heating processes and cooling processes are performed. Generally, such a heating process or a cooling process is performed by placing the wafer on a hot plate or a cooling plate (hereinafter, these are referred to as plates) for heating or cooling the wafer. If the wafer is placed directly on the plate, a gap forming member is arranged on the plate because the wafer is adversely affected by static electricity, and the wafer is heated or cooled while forming a gap between the wafer and the plate. I have.
[0005]
Incidentally, when performing the heat treatment at a high temperature on the wafer in which the solvent has been replaced in the heat treatment and the cooling treatment, the treatment is performed in a low oxygen atmosphere from the viewpoint of preventing oxidation. Such a low-oxygen atmosphere is, for example, after the wafer is loaded into the processing chamber, the processing chamber becomes N₂It is formed by replacing with a gas.
[0006]
[Problems to be solved by the invention]
However, N₂If it takes a long time to form a desired low-oxygen atmosphere by substituting with, the time required for the heat treatment under low oxygen becomes substantially longer, which affects the entire processing time for forming the insulating film. There is a problem of giving. Therefore, the processing chamber can be efficiently N₂It is desired to replace with gas.
[0007]
An object of the present invention is to provide a substrate processing apparatus capable of performing heat treatment under low oxygen in a short time and further reducing the total time required for substrate processing.
[0008]
Another object of the present invention is to provide a substrate processing apparatus capable of uniformly performing a heat treatment under low oxygen.
[0009]
[Means for Solving the Problems]
In order to solve this problem, a main aspect of the present invention is a processing chamber for heat-treating a substrate having a first surface and a second surface, and a processing chamber disposed in the processing chamber and having a second surface side. A hot plate that heat-treats the substrate, a gap forming member that holds a predetermined gap between a surface of the hot plate and a second surface of the substrate, and a gap disposed around the hot plate, A first supply unit for supplying a purge gas to the first surface and the second surface of the substrate substantially parallel to the substrate disposed on the hot plate via a forming member;A second supply unit for supplying a purge gas from a surface of the hot plate toward a second surface of the substrate;Is provided.
[0010]
In the present invention, since the gas for purging is supplied to the first surface and the second surface of the substrate substantially parallel to the substrate arranged on the hot plate via the gap forming member, Can be efficiently replaced with a purge gas, and the periphery of the substrate can be uniformly replaced. Therefore, heat treatment under low oxygen can be performed in a short time, and the total time required for substrate processing can be further reduced. In addition, heat treatment under low oxygen can be performed uniformly.
Another aspect of the present invention is a processing chamber for heating a substrate having a first surface and a second surface, the processing chamber being disposed in the processing chamber, and heating the substrate from the second surface side. A hot plate, a gap forming member for maintaining a predetermined gap between a surface of the hot plate and a second surface of the substrate, and a hot plate disposed around the hot plate; A first supply unit for supplying a purge gas to the first surface and the second surface of the substrate substantially parallel to the substrate disposed on the plate, wherein the first supply unit is An exhaust unit is disposed on one side of the hot plate and further disposed on the other side of the hot plate.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0019]
1 to 3 are views showing the overall configuration of an SOD system according to an embodiment of the present invention. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.
[0020]
In the SOD system 1, a plurality of semiconductor wafers (hereinafter, referred to as "wafers") W as substrates are loaded into the system from the outside or unloaded from the system in units of, for example, 25 wafer cassettes CR. A cassette block 10 for loading and unloading wafers W, and various single-wafer processing stations for performing predetermined processing on the wafers W one by one in the SOD coating process are arranged in multiple stages at predetermined positions. It has a configuration in which a processing block 11 and a cabinet 12 in which an ammonia water bottle, a bubbler, a drain bottle, and the like required in the aging step are installed are integrally connected.
[0021]
In the cassette block 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, up to four wafer cassettes CR are arranged in a row in the X direction with the wafer entrances facing the processing block 11 at positions of the projections 20 a on the cassette mounting table 20. The wafer carrier 21 mounted and movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z vertical direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. It has become. Further, the wafer transfer body 21 is configured to be rotatable in the θ direction, and also has access to a transfer / cooling plate (TCP) belonging to the multistage station section of the third set G3 on the processing block 11 side as described later. I can do it.
[0022]
In the processing block 11, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 22 is provided at the center, and all processing stations are arranged in multiple stages around one or more sets around the main wafer transfer mechanism 22. ing. In this example, a multi-stage arrangement of four sets G1, G2, G3, G4 is provided, and the multi-stage stations of the first and second sets G1, G2 are juxtaposed on the system front (front side in FIG. 1) side. The multistage stations of the set G3 are arranged adjacent to the cassette block 10, and the multistage stations of the fourth set G4 are arranged adjacent to the cabinet 12.
[0023]
As shown in FIG. 2, in the first set G1, a wafer W is placed on a spin chuck in a cup CP to supply an insulating film material, and the wafer is rotated to apply a uniform insulating film on the wafer. A coating process station (SCT), a wafer W is placed on a spin chuck in a cup CP to supply an exchange chemical such as HMDS and heptane, and a solvent in an insulating film applied on the wafer is removed by another solvent before a drying process. A solvent exchange processing station (DSE) for performing a process of replacing with a solvent is stacked in two stages from the bottom.
[0024]
In the second set G2, the SOD coating processing station (SCT) is arranged in the upper stage. In addition, if necessary, an SOD coating processing station (SCT), a solvent exchange processing station (DSE), and the like can be arranged at the lower stage of the second set G2.
[0025]
As shown in FIG. 3, in the third set G3, two low-oxygen high-temperature heat treatment stations (OHP), two low-temperature heat treatment stations (LHP), two cooling treatment stations (CPL), Cooling plates (TCP) and cooling processing stations (CPL) are arranged in multiple stages in order from the top. Here, the low-oxygen high-temperature heating processing station (OHP) has a hot plate on which the wafer W is placed in a process chamber that can be sealed, and discharges N2 uniformly from a hole on the outer periphery of the hot plate, and the upper portion of the processing chamber Air is exhausted from the center, and the wafer W is subjected to high-temperature heat treatment in a low oxygen atmosphere. The low-temperature heat processing station (LHP) has a hot plate on which the wafer W is placed, and heat-processes the wafer W at a low temperature. The cooling processing station (CPL) has a cooling plate on which the wafer W is placed, and cools the wafer W. The transfer / cooling plate (TCP) has a two-stage structure having a cooling plate for cooling the wafer W in a lower stage and a transfer table in an upper stage, and transfers the wafer W between the cassette block 10 and the processing block 11.
[0026]
In the fourth set G4, a low-temperature heating processing station (LHP), two low-oxygen curing / cooling processing stations (DCC), and an aging processing station (DAC) are arranged in multiple stages in order from the top. Here, the low-oxygen curing / cooling processing station (DCC) has a hot plate and a cooling plate adjacent to each other in a process chamber that can be sealed, and performs high-temperature heat treatment and heating in a N 2 -substituted low-oxygen atmosphere. The processed wafer W is cooled. The aging processing station (DAC) introduces NH 3 + H 2 O into a process chamber that can be sealed, performs aging processing on the wafer W, and wet-gels the insulating film material film on the wafer W.
[0027]
FIG. 4 is a perspective view showing the external appearance of the main wafer transfer mechanism 22. The main wafer transfer mechanism 22 has a cylindrical support 27 composed of a pair of opposed wall portions 25 and 26 connected to each other at an upper end and a lower end. On the inside, a wafer transfer device 30 that can move up and down in the vertical direction (Z direction) is provided. The cylindrical support 27 is connected to a rotation shaft of a motor 31, and is rotated integrally with the wafer transfer device 30 around the rotation shaft by the rotation driving force of the motor 31. Therefore, the wafer transfer device 30 is rotatable in the θ direction. For example, three tweezers are provided on the transfer base 40 of the wafer transfer device 30. Each of these tweezers 41, 42, and 43 has a shape and a size that can pass through the side opening 44 between the two walls 25 and 26 of the cylindrical support 27, and the front and rear along the X direction. It is configured to be freely movable. Then, the main wafer transfer mechanism 22 accesses the processing stations arranged around the tweezers 41, 42, and 43 to transfer the wafer W to and from these processing stations.
[0028]
FIG. 5 is a sectional view of the cooling processing station (CPL) described above, and FIG. 6 is a plan view thereof.
[0029]
A cooling plate 32 as a plate for performing a cooling process on the wafer W is disposed substantially at the center of the cooling processing station (CPL). The cooling plate 32 is, for example, circular with a diameter slightly larger than the wafer W, and a cooling pipe (not shown) is arranged in the cooling plate 32 so that cooling water circulates in the cooling pipe.
[0030]
A plurality of through holes 34 are provided between the front and back surfaces of the cooling plate 32, for example, at three positions. In these through holes 34, a plurality of, for example, three support pins 35 for transferring the wafer W are inserted so as to be able to protrude and retract. These support pins 35 are integrally connected on the back surface side of the cooling plate 32 by a connecting member 36 arranged on the back surface side of the cooling plate 32. The coupling member 36 is connected to an elevating cylinder 37 arranged on the back side of the cooling plate 32. The support pins 35 protrude or sink from the surface of the cooling plate 32 by the elevating operation of the elevating cylinder 37. The support pins 35 transfer the wafer W to and from the main wafer transfer mechanism 22 while protruding from the surface of the cooling plate 32. The support pins 35 that have received the wafer W from the main wafer transfer mechanism 22 descend and sink into the cooling plate 32, whereby the wafer W comes into close contact with the surface of the cooling plate 32, and the wafer W is cooled. It has become.
[0031]
Above the cooling plate 32, a cooling cover 38 is arranged. Note that it is also possible to provide a support pin on the upper surface of the cooling cover 38 to constitute a standby portion for the wafer W.
[0032]
Further, in this cooling processing station (CPL), a proximity sheet 51 as a gap forming member for floating and holding the wafer W on the cooling plate 32 without adhering to the cooling plate 32 is provided at the outer periphery of the wafer W mounting position. Proximity pins 52 as gap forming members are disposed at a plurality of positions, for example, six positions, and at the center of the wafer W mounting position.
[0033]
The proximity sheets 51 extend outside the wafer W mounting position, and guide guides 53 for guiding the substrates are arranged at the positions where the proximity sheets 51 extend.
[0034]
The height of the proximity sheet 51 and the proximity pins 52 in the cooling processing station (CPL) is set to, for example, about 0.1 mm. Thereby, the gap between the cooling plate 32 and the wafer W becomes very small, and the cooling effect can be enhanced.
[0035]
FIG. 7 is a sectional view of the aging processing station (DAC).
[0036]
An aging processing station (DAC) is provided with a heating plate 61 made of, for example, ceramics having a built-in heater 61a, and a seal formed on a peripheral portion of the heating plate 61 so as to form a space S that forms a processing chamber above the heating plate 61. A lid 63 which is in close contact with the heating plate 61 via a member 62 and which has a supply port formed on the surface of the heating plate 61 so as to surround a wafer placed on the heating plate 61. The apparatus includes a path 64, an exhaust path 65 having a suction port formed in the center of the lid 63, and three lifting pins 66 for raising and lowering the wafer W between the heating plate 61 and a position above the heating plate 61.
[0037]
In this aging processing station (DAC), ammonia is vaporized by a bubbler and a mass flow controller (not shown) in the side cabinet 12 and supplied into the processing chamber S through the above-described gas supply path 64, and is discharged into an exhaust path. Exhaust gas from 65 is trapped by a drain tank (not shown) in the side cabinet 12.
[0038]
In the aging processing station (DAC), a proximity sheet 51 and a proximity pin 52 as gap forming members having a height of about 0.1 mm, for example, and a guide guide 53 are provided similarly to the cooling processing station (CPL) described above. Is provided.
[0039]
FIG. 8 is a sectional view of the low-temperature heat treatment station (LHP) described above.
[0040]
At a substantially center of the low-temperature heat treatment station (LHP), a hot plate 132 as a plate for heat-treating the wafer W is disposed. A heater (not shown) is embedded in the hot plate 132.
[0041]
A plurality of through holes 134 are provided between the front surface and the back surface of the hot plate 132, for example, at three positions. In these through holes 134, a plurality of, for example, three support pins 135 for transferring the wafer W are inserted so as to be able to protrude and retract. These support pins 135 are integrally connected on the back side of the hot plate 132 by a connecting member 136 disposed on the back side of the hot plate 132. The coupling member 136 is connected to a lifting cylinder 137 arranged on the back side of the hot plate 132. The support pins 135 protrude or sink from the surface of the hot plate 132 by the elevating operation of the elevating cylinder 137.
[0042]
Above the hot plate 132, an elevating cover 138 is arranged. The elevating cover 138 can be moved up and down by an elevating cylinder 139. Then, when the elevating cover 138 is lowered as shown in the figure, a closed space for performing a heat treatment is formed between the elevating cover 138 and the hot plate 132.
[0043]
Further, in the low-temperature heating processing station (LHP), similar to the above-described aging processing station (DAC) and cooling processing station (CPL), for example, the proximity sheet 51 and the proximity sheet as gap forming members having a height of about 0.1 mm are provided. A pin 52 and a guide 53 are provided. By thus narrowing the gap between the hot plate 132 and the wafer W, the effect of the heat treatment can be enhanced.
[0044]
FIG. 9 is a cross-sectional view of the low-oxygen high-temperature heat treatment station (OHP) described above.
[0045]
A hot plate 232 as a plate for heat-treating the wafer W is disposed substantially at the center of the low-oxygen high-temperature heat treatment station (OHP). A heater (not shown) is embedded in the hot plate 232.
[0046]
A plurality of, for example, three, through holes 234 are provided between the front surface and the back surface of the hot plate 232. In each of the through holes 234, a plurality of, for example, three support pins 235 for transferring the wafer W are inserted so as to be able to protrude and retract. These support pins 235 are integrally connected on the back side of the hot plate 232 by a connecting member 236 arranged on the back side of the hot plate 232. The coupling member 236 is connected to a lifting cylinder 237 disposed on the back side of the hot plate 232. The support pin 235 protrudes or sinks from the surface of the hot plate 232 by the elevating operation of the elevating cylinder 237.
[0047]
Above the hot plate 232, an elevating cover 238 is arranged. The elevating cover 238 can be moved up and down by an elevating cylinder 239. Then, when the elevating cover 238 is lowered as shown in the drawing, a closed space for performing a heat treatment is formed between the elevating cover 238 and the hot plate 232.
[0048]
Further, the N 2 gas is uniformly discharged from the hole 240 on the outer periphery of the hot plate 232 and exhausted from the exhaust port 241 at the center of the elevating cover 238 so that the wafer W is heated at a high temperature in a low oxygen atmosphere. .
[0049]
In the low-oxygen high-temperature heat treatment station (OHP), the proximity sheet 251 and the proxy sheet as gap-forming members are provided similarly to the aging treatment station (DAC), the cooling treatment station (CPL), and the low-temperature heat treatment station (LHP). The proximity pin 252 and the guide 253 are provided. The height of the proximity sheet 251 and the proximity pin 252 is set to 0.2 mm, and the above-described aging processing station (DAC) and cooling processing station (CPL) are provided. , Twice as high as that of the low-temperature heat treatment station (LHP). As a result, air does not remain in the gap between the wafer W and the hot plate 232 when replacing with the N 2 gas, and the inside of the sealed space between the elevating cover 238 as the processing chamber and the hot plate 232 is desired. The time for forming a low oxygen atmosphere can be shortened, and heat treatment under low oxygen can be performed in a short time.
[0050]
FIG. 10 is a plan view of the above-described low oxygen curing / cooling processing station (DCC), and FIG. 11 is a sectional view thereof.
[0051]
The low-oxygen curing / cooling treatment station (DCC) has a heat treatment chamber 341 and a cooling treatment chamber 342 provided adjacent thereto, and the heat treatment chamber 341 has a set temperature of 200 to 470. It has a hot plate 343 that can be set to ℃. The low-oxygen curing / cooling processing station (DCC) further includes a first gate shutter 344 that opens and closes when transferring the wafer W to and from the main wafer transfer mechanism 22, a heating processing chamber 341 and a cooling processing chamber 342. And a ring shutter 346 that moves up and down together with the second gate shutter 345 while surrounding the wafer W around the hot plate 343. Further, the heating plate 343 is provided with three lift pins 347 for placing the wafer W thereon and moving it up and down. Note that a shielding screen may be provided between the hot plate 343 and the ring shutter 346.
[0052]
Below the heat treatment chamber 341, an elevating mechanism 348 for elevating the three lift pins 347, an elevating mechanism 349 for elevating the ring shutter 346 together with the second gate shutter 345, and a first gate shutter A lifting mechanism 350 for lifting and lowering the 344 to open and close it is provided.
[0053]
In the heat treatment chamber 341, N gas is supplied from a ring shutter 346 as a purge gas as described later.₂Gas is supplied. An exhaust pipe 351 is connected to an upper portion of the heat treatment chamber 341, and the inside of the heat treatment chamber 341 is configured to be exhausted through the exhaust pipe 351. Further, an oxygen concentration monitor 361 for monitoring the oxygen concentration in the heat treatment chamber 341 is connected to the heat treatment chamber 341. Then, as described later, N₂By evacuating while supplying the gas, the inside of the heat treatment chamber 341 is maintained at a low oxygen concentration (for example, 50 ppm or less) atmosphere. Of course, the oxygen concentration monitoring section may be arranged on an exhaust path such as an exhaust pipe.
[0054]
The heating processing chamber 341 and the cooling processing chamber 342 are communicated through a communication port 352, and a cooling plate 353 for mounting and cooling the wafer W is horizontally moved by a moving mechanism 355 along a guide plate 354. It is configured to be movable in the direction. Thereby, the cooling plate 352 can enter the inside of the heat treatment chamber 341 through the communication port 352, and341The wafer W heated by the internal heating plate 343 is received from the lift pins 347 and carried into the cooling processing chamber 342, and after the wafer W is cooled, the wafer W is returned to the lift pins 347.
[0055]
The set temperature of the cooling plate 353 is, for example, 15 to 25 ° C., and the applicable temperature range of the wafer W to be cooled is, for example, 200 to 470 ° C.
[0056]
Further, the cooling processing chamber 342 is configured such that an inert gas such as N 2 is supplied thereto through a supply pipe 356, and is further exhausted to the outside through an exhaust pipe 357. It is configured. Thus, similarly to the heat treatment chamber 341, the inside of the cooling treatment chamber 342 is maintained at a low oxygen concentration (for example, 50 ppm or less) atmosphere.
[0057]
On the hot plate 343, a proximity sheet 251 and proximity pins 252 each having a height of 0.2 mm, similar to the above-described low-oxygen high-temperature heat treatment station (OHP), and a guide 253 are provided. This prevents air from remaining in the gap between the wafer W and the hot plate 343 when replacing with the N 2 gas, thereby shortening the time required for setting the inside of the heat treatment chamber 341 to a desired low oxygen atmosphere. In addition, heat treatment under low oxygen can be performed in a short time. FIG. 13 shows the results of an experiment performed to confirm such an effect. In the figure, A indicates a temporal change in the oxygen concentration in the gap between the wafer W and the hot plate 343 when the gap between the hot plate 343 and the hot plate 343 is 0.1 mm. The time change of the oxygen concentration in the gap in the case of 0.2 mm is shown. From this figure, it can be seen that the oxygen concentration decreases as the gap between the wafer W and the hot plate 343 increases.
[0058]
The configuration of the cooling plate disposed below the transfer / cooling plate (TCP) is substantially the same as that of the cooling processing station (CPL) shown in FIGS. 5 and 6. Similarly, a proximity sheet and a proximity pin having a height of 0.1 mm and a guide are provided.
[0059]
FIG. 14 is a diagram showing a configuration inside the heat treatment chamber 341 in the low oxygen curing / cooling treatment station (DCC) described above. This figure shows a state in which the ring shutter 346 is raised, and the ring shutter 346 surrounds the periphery of the wafer W placed on the heating plate 343 at the heating position.
[0060]
N inside the ring shutter 346₂N from gas supply source 362₂Gas is supplied. In addition, the inner wall of the ring shutter 346 has N₂A large number of ejection holes 363 for ejecting gas substantially parallel to the wafer W are provided.
[0061]
With respect to the wafer W placed on the hot plate 343 via the proximity sheet and the proximity pins, N₂In order to supply the gas, some of the large number of ejection holes 363 are provided at a position lower than the back surface of the wafer W placed on the hot plate 343 via the proximity sheet and the proximity pins, and the remaining ejection holes are provided. Reference numeral 363 is provided at a position higher than the surface of the wafer W.
[0062]
Further, the control unit 364 controls N based on the oxygen concentration in the heat treatment chamber 341 monitored by the oxygen concentration monitoring unit 361.₂N from gas supply 362₂The gas supply amount and the exhaust amount via the exhaust pipe 351 are controlled. By performing control in this manner, N₂Gas consumption can be reduced.
[0063]
With the lift pins 347 raised, the wafer W is transferred onto the lift pins 347 from the main wafer transfer mechanism 22. Thereafter, the first and second gate shutters 344, 345 are closed. N in the heat treatment chamber 341₂N from gas supply source 362₂The gas is supplied, and the inside of the heat treatment chamber 341 is further exhausted through the exhaust pipe 351. At this stage, a large amount of N of about 30 l / min.₂Supply gas. Thereby, the air remaining in the heat treatment chamber 341 is pushed out from the exhaust pipe 351 and the purging proceeds rapidly.
[0064]
From such a state, the lift pins 347 are lowered, and the wafer W is placed on the hot plate 343 via the proximity sheet and the proximity pins. In the present embodiment, as described above, N₂Since the gas is supplied to the front and back surfaces of the wafer W almost in parallel to the wafer W, the periphery of the wafer W is efficiently N₂Can be replaced with gas and N₂The surroundings of the gas can be uniformly replaced.
[0065]
Thereafter, when the oxygen concentration becomes stable below a certain value, N₂The gas supply was reduced to a small amount of about 10 l / min.₂Gas continues to be supplied by this amount. Thus N₂By reducing the gas supply, N₂Gas consumption can be reduced.
[0066]
Next, the operation of the SOD system 1 configured as described above will be described. FIG. 12 shows a processing flow in the SOD system 1.
[0067]
First, in the cassette block 10, the unprocessed wafer W is transferred from the wafer cassette CR to the transfer table in the transfer / cooling plate (TCP) belonging to the third set G3 on the processing block 11 side via the wafer transfer body 21.
[0068]
The wafer W transferred to the transfer table in the transfer / cooling plate (TCP) is transferred to the cooling processing station (CPL) via the main wafer transfer mechanism 22. Then, in the cooling processing station (CPL), the wafer W is cooled to a temperature suitable for processing in the SOD coating processing station (SCT) (step 901).
[0069]
The wafer W cooled at the cooling processing station (CPL) is transferred to the SOD coating processing station (SCT) via the main wafer transfer mechanism 22. Then, in the SOD coating station (SCT), the wafer W is subjected to the SOD coating process (Step 902).
[0070]
The wafer W on which the SOD coating processing has been performed at the SOD coating processing station (SCT) is transferred to the aging processing station (DAC) via the main wafer transfer mechanism 22. Then, in the aging processing station (DAC), NH 3 + H 2 O is introduced into the processing chamber, the wafer W is subjected to aging processing, and the insulating film material film on the wafer W is gelled (step 903).
[0071]
The wafer W that has been aged at the aging processing station (DAC) is transferred to the solvent exchange processing station (DSE) via the main wafer transfer mechanism 22. Then, at the solvent exchange processing station (DSE), a chemical solution for exchange is supplied to the wafer W, and a process of replacing the solvent in the insulating film applied on the wafer with another solvent is performed (step 904).
[0072]
The wafer W that has undergone the replacement processing at the solvent exchange processing station (DSE) is transferred to the low-temperature heating processing station (LHP) via the main wafer transfer mechanism 22. Then, the wafer W is subjected to a low-temperature heat treatment at a low-temperature heat treatment station (LHP) (step 905).
[0073]
The wafer W subjected to the low-temperature heat treatment at the low-temperature heat treatment station (LHP) is transferred to the low-oxygen high-temperature heat treatment station (OHP) via the main wafer transfer mechanism 22. Then, at the low-oxygen high-temperature heat treatment station (OHP), the wafer W is subjected to high-temperature heat treatment in a low-oxygen atmosphere (step 906). Alternatively, the wafer W subjected to the low-temperature heat treatment at the low-temperature heat treatment station (LHP) is transferred to the low-oxygen cure / cooling processing station (DCC) via the main wafer transfer mechanism 22. Then, in the low oxygen curing / cooling processing station (DCC), the wafer W is subjected to a high-temperature heat treatment in a low oxygen atmosphere and cooled (step 907).
[0074]
Either of Steps 906 and 907 is appropriately selected depending on the insulating material applied to the wafer W.
[0075]
The wafer W processed in step 906 or 907 is transferred to the cooling plate in the transfer / cooling plate (TCP) via the main wafer transfer mechanism 22. Then, the wafer W is cooled in the cooling plate of the transfer / cooling plate (TCP) (Step 908).
[0076]
The wafer W cooled by the cooling plate of the transfer / cooling plate (TCP) is transferred to the wafer cassette CR via the wafer transfer body 21 in the cassette block 10.
[0077]
As described above, in the SOD system 1 of the present embodiment, the aging processing station (DAC) for aging the wafer W coated with the edge film material and the solvent exchange processing station (DSE) for performing the solvent exchange processing on the aged wafer W. Is integrated with the system, so that the total time required for substrate processing is very short. In addition, the aging processing station (DAC) and the solvent exchange processing station (DSE) are like a buffer that temporarily holds the wafer W with respect to the low oxygen high temperature heating processing station (OHP) and the low oxygen curing / cooling processing station (DCC). Since it performs various functions, it is possible to make the tact time consistent.
[0078]
Next, a modification of the heat treatment chamber shown in FIG. 14 will be described.
[0079]
The heat treatment chamber 401 shown in FIG.₂An ejection hole 402 for ejecting gas is provided. By providing such ejection holes 402, the gap between the back surface of the wafer W placed on the hot plate 343 and the hot plate 343 via the proximity sheet and the proximity pins is N₂Gas can be supplied more efficiently and more uniformly.
[0080]
The heat treatment chamber 411 illustrated in FIG.Out ofSome are ejected from the ejection holes 363 provided at a position lower than the back surface of the wafer W disposed on the hot plate 343 via the proximity sheet and the proximity pins.₂The amount of gas ejected and the N ejected from the ejection hole 363 provided at the position closest to the surface of the wafer W₂The amount of gas ejected from the ejection hole 363 at the position along the distance from the surface of the wafer W with the gas ejection amount being maximized₂The amount of gas spout is gradually reduced. Since there is no problem even if the oxygen concentration is high to some extent at a position distant from the wafer W, the N₂By reducing the gas supply amount, N₂Gas consumption can be reduced.
[0081]
The heat treatment chamber 421 shown in FIG. 17 and FIG.₂N for supplying gas₂A gas supply section 422 is provided, and an exhaust section 423 for exhausting gas is provided on the other side of the hot plate 343.
[0082]
The heat treatment chamber 431 shown in FIG. 19 and FIG.₂N for supplying gas₂A gas supply unit 432 is provided, and an exhaust unit 433 for exhausting gas is provided on the outer periphery of the hot plate 343.
[0083]
In the heat treatment chambers 421 and 431 configured as described above, N₂The gas can be purged more smoothly and quickly.
[0084]
In the heat treatment chamber 441 shown in FIG. 21, an exhaust portion 442 for exhausting air is provided on the surface of the hot plate 343, and N₂N for supplying gas₂A gas supply unit 443 is provided. In this example, in particular, by providing the exhaust portion 442 on the surface of the hot plate 343, uniform exhaust can be performed, and thereby uniform processing can be performed by uniform purge.
[0085]
The present invention can be further modified and implemented as follows.
[0086]
That is, as shown in FIG. 22, when the wafer W is transferred from the main wafer transfer mechanism 22 onto the lift pins 347 in a state where the lift pins 347 are raised, for example, in the heat treatment chamber 341 shown in FIG. Then, the second gate shutters 344 and 345 are closed (step 2201). Next, lowering of the lift pins 347 is started (step 2202), and N₂The inside of the heat treatment chamber 341 is exhausted without supplying the gas (step 2203). After reaching a certain degree of vacuum state (for example, after a lapse of a predetermined time) (step 2204), the evacuation is stopped and N₂The supply of gas is started (Step 2205). Thereafter, the wafer W is placed on the hot plate 343 via the proximity sheet and the proximity pins. In the present embodiment, in particular, N₂Since gas is supplied, purging can be performed efficiently.
[0087]
Further, as shown in FIG. 23, for example, when the wafer W is transferred from the main wafer transfer mechanism 22 onto the lift pins 347 in a state where the lift pins 347 are raised in the heat treatment chamber 341 shown in FIG. Then, the second gate shutters 344 and 345 are closed (step 2301). Next, the lowering of the lift pins 347 is started (step 2302), and the inside of the heat treatment chamber 341 is exhausted while N₂A gas is supplied (step 2303). Thereafter, the wafer W is placed on the hot plate 343 via the proximity sheet and the proximity pins. In the present embodiment, there is a possibility that particles may fly especially when the pressure in the processing chamber is once reduced to a vacuum state, but such a situation can be avoided since there is no pressure reducing step. In addition, N₂By performing the substitution, the temperature distribution can be further improved, and the heat treatment can be performed at a stable temperature.
[0088]
Further, as shown in FIG. 24, for example, when the wafer W is transferred from the main wafer transfer mechanism 22 onto the lift pins 347 in a state where the lift pins 347 are raised in the heat treatment chamber 341 shown in FIG. Then, the second gate shutters 344 and 345 are closed (step 2401). Next, while evacuating the inside of the heat treatment chamber 341, N 2₂A gas is supplied (step 2402). Thereafter, the oxygen concentration is checked, and when the oxygen concentration falls below a predetermined value (step 2403), the lowering of the lift pins 347 is started (step 2404), and thereafter, the wafer W is transferred via the proximity sheet and the proximity pins. It is placed on the hot plate 343. In this embodiment, in particular, N₂Since the heating of the wafer W is started after the replacement is completed, the oxidation of the wafer W can be reliably prevented.
[0089]
The present invention is not limited to the above-described embodiment, and can be variously modified. For example, the substrate to be processed is not limited to a semiconductor wafer, but may be another substrate such as an LCD substrate. Further, the type of the film is not limited to the interlayer insulating film.
[0090]
【The invention's effect】
As described above, according to the present invention, heat treatment under low oxygen can be performed in a short time, and the total time required for substrate processing can be shortened. In addition, heat treatment under low oxygen can be performed uniformly.
[Brief description of the drawings]
FIG. 1 is a plan view of an SOD system according to an embodiment of the present invention.
FIG. 2 is a front view of the SOD system shown in FIG.
FIG. 3 is a rear view of the SOD system shown in FIG. 1;
4 is a perspective view of a main wafer transfer mechanism in the SOD system shown in FIG.
FIG. 5 is a sectional view of a cooling processing station according to the embodiment of the present invention.
6 is a plan view of the cooling processing station shown in FIG.
FIG. 7 is a sectional view of the aging processing station according to the embodiment of the present invention.
FIG. 8 is a sectional view of a low-temperature heat treatment station according to the embodiment of the present invention.
FIG. 9 is a sectional view of a low-oxygen and high-temperature heat treatment station according to the embodiment of the present invention.
FIG. 10 is a plan view of a low oxygen curing / cooling processing station according to the embodiment of the present invention.
FIG. 11 is a sectional view of the low-oxygen curing / cooling processing station shown in FIG. 11;
FIG. 12 is a processing flowchart of the SOD system shown in FIG. 1;
FIG. 13 shows the results of an experiment performed to confirm the effects of the present invention.
FIG. 14 is a sectional view of a heat treatment chamber in the low-oxygen curing / cooling treatment station shown in FIG.
FIG. 15 is a sectional view showing another embodiment of the heat treatment chamber.
FIG. 16 is a sectional view showing still another embodiment of the heat treatment chamber.
FIG. 17 is a plan view showing still another embodiment of the heat treatment chamber.
18 is a cross-sectional view of the heat treatment chamber shown in FIG.
FIG. 19 is a plan view showing another embodiment of the heat treatment chamber.
20 is a cross-sectional view of the heat treatment chamber shown in FIG.
FIG. 21 is a plan view showing still another embodiment of the heat treatment chamber.
FIG. 22 is a flowchart showing another processing procedure in the heat treatment chamber.
FIG. 23 is a flowchart showing another processing procedure in the heat treatment chamber.
FIG. 24 is a flowchart showing yet another processing procedure in the heat treatment chamber.
[Explanation of symbols]
22 Main wafer transfer mechanism
32 cooling plate
51,251 Proximity sheet
52, 252 Proximity pin
61, 132, 232, 343 hot plate
W wafer
CPL cooling processing station
SCT SOD coating station
DAC aging processing station
DSE Solvent Exchange Processing Station
LHP low temperature heat treatment station
OHP Low oxygen high temperature heat treatment station
DCC Low oxygen cure / cooling station
TCP delivery / cooling plate

Claims (3)

A processing chamber for heat-treating a substrate having a first surface and a second surface;
A hot plate disposed in the processing chamber and heat-treating the substrate from the second surface side;
A gap forming member that holds a predetermined gap between the surface of the hot plate and the second surface of the substrate;
A purge gas is supplied to the first surface and the second surface of the substrate, which is disposed around the hot plate and is substantially parallel to the substrate disposed on the hot plate via the gap forming member. A first supply unit,
A second supply unit configured to supply a gas for purging from a surface of the hot plate toward a second surface of the substrate. A processing chamber for heat-treating a substrate having a first surface and a second surface;
A hot plate disposed in the processing chamber and heat-treating the substrate from the second surface side;
A gap forming member that holds a predetermined gap between the surface of the hot plate and the second surface of the substrate;
A purge gas is supplied to the first surface and the second surface of the substrate, which is disposed around the hot plate and is substantially parallel to the substrate disposed on the hot plate via the gap forming member. A first supply unit that performs
The first supply unit is disposed on one side of the hot plate;
The substrate processing apparatus further includes an exhaust unit disposed on the other side of the hot plate. The substrate processing apparatus according to claim 2,
The substrate processing apparatus according to claim 1, wherein the exhaust unit exhausts air from a first surface and a second surface of the substrate substantially in parallel with the substrate disposed on the hot plate.

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