JP3557382B2 - Substrate processing equipment - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention belongs to the technical field of a substrate processing apparatus used in a manufacturing process of a semiconductor device and the like.For example, a sol-like coating film in which particles or colloids are dispersed in an organic solvent, applied as an insulating film material on a substrate, is provided. The present invention relates to a substrate processing apparatus for performing a gelling process when gelling.
[0002]
[Prior art]
In a manufacturing process of a semiconductor device, for example, an interlayer insulating film is formed by an SOD (Spin on Dielectric) system. In this SOD system, for example, a coating film is spin-coated on a wafer, and a chemical treatment or a heat treatment is performed to form an interlayer insulating film.
[0003]
For example, when forming such an interlayer insulating film, first, a solution in which a colloid of an insulating film material, for example, TEOS (tetraethoxysilane) is dispersed in an organic solvent on a semiconductor wafer (hereinafter, referred to as “wafer”). Supply. Next, the wafer supplied with the solution is subjected to a gelling process, and then the solvent is replaced. Then, the wafer in which the solvent has been replaced is subjected to a heat treatment.
[0004]
In the step of gelling (aging) the wafer in the series of steps, the wafer is heated at, for example, about 100 ° C. in a processing chamber configured to supply and exhaust a processing gas including, for example, vaporized ammonia. Heated. Thereby, the colloid of TEOS contained in the coating film applied as the insulating film material is gelled and chained in a network.
[0005]
As a configuration for supplying the processing gas into the processing chamber, for example, a plurality of supply holes for blowing the processing gas heated along the outer periphery of the wafer surface are provided, and these supply holes are directed toward the surface of the wafer. It is conceivable to supply a processing gas.
[0006]
[Problems to be solved by the invention]
By the way, in the above-mentioned process of gelling a wafer, in order to perform a uniform gelling process, a process temperature is kept constant during the process, and a process gas containing ammonia is uniformly supplied onto the wafer. is important.
[0007]
However, in the above-described configuration, in order to maintain the supplied processing gas at a constant temperature, for example, a configuration is required in which a temperature detection unit is provided and the temperature of the processing gas is feedback-controlled based on the temperature detection result. In that case, in addition to the problem that the configuration becomes complicated, it takes a lot of time to return the temperature to an appropriate temperature particularly when the overheating occurs, and thus it is difficult to keep the processing temperature constant. There is.
[0008]
Further, among the supply holes connected to the apparatus for supplying the processing gas, the supply hole connected near the apparatus has a stronger tendency to supply a larger amount of the processing gas, and thus the processing gas is supplied onto the wafer. There is a problem that it is difficult to supply them uniformly.
[0009]
Therefore, an object of the present invention is to provide a substrate processing apparatus capable of maintaining a processing temperature constant with a simple configuration and further capable of uniformly supplying a processing gas onto a substrate.
[0010]
[Means for Solving the Problems]
To achieve the above object, a main aspect of the present invention is a substrate processing apparatus, comprising: a processing chamber for processing a substrate; and a first and a second surface disposed in the processing chamber. A hot plate that holds a substrate on a first surface and performs heat processing; a supply unit that supplies a processing gas into the processing chamber; an exhaust unit that exhausts the processing chamber; and an outer periphery of a second surface of the hot plate provided along the inside, said supplied process gas from the supply means temporarily stored in and a delivery passage for guiding toward the surface of the heat plate from the outer edge of the hot plate, the guide chamber, the A guide plate is provided for guiding the processing gas supplied from the supply means along the outer periphery of the back surface of the hot plate and connected to the hot plate.
[0011]
In the present invention, the processing gas supplied from the supply chamber is temporarily stored in the guide chamber provided on the back surface of the hot plate and set to a temperature substantially equal to the temperature of the substrate, and set to a temperature substantially equal to the temperature of the substrate. Therefore, the processing temperature can be kept constant with a simple configuration. Further, in the present invention, the guide chamber is provided along the inside of the outer periphery of the back surface of the hot plate, and is configured to guide the processing gas supplied from the supply means from the outer edge of the hot plate toward the surface of the hot plate. Therefore, the processing gas supplied from the supply means flows around the inside of the outer periphery of the back surface of the hot plate of the guide chamber and is supplied onto the substrate. Therefore, the processing gas can be supplied onto the substrate at a uniform concentration and temperature.
[0012]
These and other objects and advantages of the present invention can be easily confirmed by the following description and the accompanying drawings.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
First, an SOD (Spin on Dielectric) system as a substrate processing apparatus of the present invention will be described. 1 to 3 show the overall configuration of this SOD system. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.
[0014]
In the SOD system 1, a plurality of semiconductor wafers (hereinafter, referred to as "wafers") W as substrates are loaded into the system from the outside or unloaded from the system in units of, for example, 25 wafer cassettes CR. A cassette block 10 for loading and unloading wafers W, and various single-wafer processing stations for performing predetermined processing on the wafers W one by one in the SOD coating process are arranged in multiple stages at predetermined positions. It has a configuration in which a processing block 11 and a cabinet 12 in which an ammonia water bottle, a bubbler, a drain bottle, and the like required in the aging step are installed are integrally connected.
[0015]
In the cassette block 10, as shown in FIG. 1, a plurality of, for example, up to four wafer cassettes CR are arranged in a row in the X direction with the respective wafer entrances facing the processing block 11 at the positions of the projections 20 a on the cassette mounting table 20. The wafer carrier 21 mounted and movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z vertical direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. It has become. Further, the wafer transfer body 21 is configured to be rotatable in the θ direction, and also has access to a transfer / cooling plate (TCP) belonging to the multistage station section of the third set G3 on the processing block 11 side as described later. I can do it.
[0016]
In the processing block 11, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 22 is provided at the center, and all processing stations are arranged in multiple stages around one or more sets around the main wafer transfer mechanism 22. ing. In this example, a multi-stage arrangement of four sets G1, G2, G3, G4 is provided, and the multi-stage stations of the first and second sets G1, G2 are juxtaposed on the system front (front side in FIG. 1) side. The multistage stations of the set G3 are arranged adjacent to the cassette block 10, and the multistage stations of the fourth set G4 are arranged adjacent to the cabinet 12.
[0017]
As shown in FIG. 2, in the first set G1, the insulating film material is supplied by placing the wafer W on the spin chuck in the cup CP, and the wafer is rotated to apply the uniform insulating film material on the wafer. A SOD coating processing station (SCT) and a wafer W placed on a spin chuck in a cup CP to supply a chemical solution for exchange such as HMDS and heptane to remove a solvent in an insulating film applied on the wafer before a drying step. And a solvent exchange processing station (DSE) for performing a process of replacing with a solvent of the following order.
[0018]
In the second set G2, the SOD coating processing station (SCT) is arranged in the upper stage. In addition, if necessary, an SOD coating processing station (SCT), a solvent exchange processing station (DSE), and the like can be arranged at the lower stage of the second set G2.
[0019]
As shown in FIG. 3, in the third set G3, two low-oxygen high-temperature heat treatment stations (OHP), two low-temperature heat treatment stations (LHP), two cooling treatment stations (CPL), Cooling plates (TCP) and cooling processing stations (CPL) are arranged in multiple stages in order from the top. Here, the low-oxygen high-temperature heating processing station (OHP) has a hot plate on which the wafer W is placed in a process chamber that can be sealed, and discharges N2 uniformly from a hole on the outer periphery of the hot plate while maintaining the upper portion of the processing chamber. Air is exhausted from the center, and the wafer W is subjected to high-temperature heat treatment in a low oxygen atmosphere. The low-temperature heat processing station (LHP) has a hot plate on which the wafer W is placed, and heat-processes the wafer W at a low temperature. The cooling processing station (CPL) has a cooling plate on which the wafer W is placed, and cools the wafer W. The transfer / cooling plate (TCP) has a two-stage structure having a cooling plate for cooling the wafer W in a lower stage and a transfer table in an upper stage, and transfers the wafer W between the cassette block 10 and the processing block 11.
[0020]
In the fourth set G4, a low-temperature heating processing station (LHP), two low-oxygen curing / cooling processing stations (DCC), and an aging processing station (DAC) are arranged in multiple stages in order from the top. Here, the low-oxygen curing / cooling processing station (DCC) has a hot plate and a cooling plate adjacent to each other in a process chamber that can be sealed, and performs high-temperature heat treatment and heating in a N 2 -substituted low-oxygen atmosphere. The processed wafer W is cooled. An aging processing station (DAC) introduces NH 3 + H 2 O into a process chamber capable of being sealed, performs aging processing on the wafer W, and wet-gels the insulating film material film on the wafer W.
[0021]
FIG. 4 is a perspective view showing the external appearance of the main wafer transfer mechanism 22. The main wafer transfer mechanism 22 has a cylindrical support 27 composed of a pair of opposed wall portions 25 and 26 connected to each other at an upper end and a lower end. On the inside, a wafer transfer device 30 that can move up and down in the vertical direction (Z direction) is provided. The cylindrical support 27 is connected to a rotation shaft of a motor 31, and is rotated integrally with the wafer transfer device 30 around the rotation shaft by the rotation driving force of the motor 31. Therefore, the wafer transfer device 30 is rotatable in the θ direction. For example, three tweezers are provided on the transfer base 40 of the wafer transfer device 30. Each of these tweezers 41, 42, and 43 has a shape and a size that can pass through the side opening 44 between the two walls 25 and 26 of the cylindrical support 27, and the front and rear along the X direction. It is configured to be freely movable. Then, the main wafer transfer mechanism 22 accesses the processing stations arranged around the tweezers 41, 42, and 43 to transfer the wafer W to and from these processing stations.
[0022]
FIG. 5 is a sectional view of the aging processing station (DAC) described above, and FIG. 6 is a plan view thereof. 7 is a cross-sectional view showing a configuration of a processing chamber in an aging processing station (DAC), FIG. 8 is a view as viewed from an arrow A in FIG. 7, FIG. 9 is a view as viewed from an arrow B in FIG. 7, and FIG. FIG.
[0023]
As shown in FIGS. 5 and 6, a processing chamber 51 is disposed at the center of the aging processing station (DAC). Processing chamber 51 has a lid 53 which is vertically movably disposed relative to the main processing chamber 52 Toko processing chamber Body 52. Two elevating cylinders 54 and 55 are arranged adjacent to the processing chamber 51. The lifting cylinder 54 is connected to the lid 53 via a support member 56, and drives the lid 53 up and down. The elevating cylinder 55 is connected to three support pins, which will be described later, via a support member 57, and drives the support pins up and down.
[0024]
As shown in FIG. 7, a heating plate 60 is arranged at substantially the center of the processing chamber main body 52. A heater 81 is built in the hot plate 60. The hot plate 60 is heated by the heater 81 to a temperature for performing the aging process, for example, around 100 ° C. A plurality of holes, for example, three holes 61 are provided concentrically from the front surface to the back surface of the hot plate 60. In each hole 61, the above-described support pin 58 is positioned so as to be able to protrude and retract from the surface of the hot plate 60. The support pins 58 transfer the wafer W to and from the main wafer transfer mechanism 22 while protruding from the surface of the hot plate 60. The support pins 58 that have received the wafer W from the main wafer transfer mechanism 22 descend and sink into the hot plate 60 so that the wafer W is placed on the hot plate 60 and the wafer W is heated. Has become. Further, the proximity sheet 62 for floating and holding the wafer W on the hot plate 60 without adhering to the hot plate 60 is provided at a plurality of, for example, six, locations on the surface of the hot plate 60 around the wafer W mounting position. Are located. In addition, the proximity sheets 62 extend outside the wafer W mounting position, and guide guides 63 for guiding the wafer W are arranged at the positions where the respective proximity sheets 62 extend. .
[0025]
As described above, the lid 53 is disposed above the processing chamber main body 52 so as to be able to move up and down. A sealing member 77 is disposed on the contact surface of the lid 53 on the outer periphery of the processing chamber main body 52, and a plurality of suction holes 64 connected to a vacuuming device (not shown) are provided on the contact surface. . Then, with the lid 53 lowered, the suction hole 64 is evacuated to vacuum so that the close contact surface of the outer periphery of the cover 53 and the close contact surface of the processing chamber main body 52 come into close contact with each other to form a closed space S in the processing chamber 51. It is configured as follows. Further, an exhaust port 65 connected to an exhaust device 82 is provided substantially at the center of the lid 53, that is, at the upper center of the hot plate 60. Further, a heater 83 is built in the lid 53. Like the hot plate 60 described above, the lid 53 is also heated by the heater 83 to a temperature substantially equal to the temperature for performing the aging process. Thereby, it is possible to prevent the processing gas from condensing on the lid 53.
[0026]
Near the outer periphery of the back surface of the processing chamber main body 52, the processing chamber 51 is connected to a gas supply unit 84 that supplies a processing gas containing ammonia (NH 3) vaporized into the processing chamber 51 and a nitrogen (N 2) gas for purging. Only one supply path 66 is provided. A guide for temporarily storing the processing gas supplied from the gas supply unit 84 via the supply path 66 along the inside of the outer periphery of the back surface of the hot plate 60 and guiding the processing gas from the outer edge of the hot plate 60 toward the surface of the hot plate 60. A chamber 67 is provided. The gas supply unit 84 selectively supplies, for example, one of a processing gas (NH3 + H2O) containing vaporized ammonia (NH3) stored in a tank and a nitrogen (N2) gas for purging. The gas supply unit 84 also has a function of preheating these gases. For example, the preheating may be about the same as the actual processing temperature, but may be slightly lower than the processing temperature. This is because if the temperature is substantially the same as the actual processing temperature, it becomes impossible to lower the processing temperature to a normal processing temperature in the case of overheating.
[0027]
The control unit 85 controls on / off of the heaters 81 and 83 and the exhaust device 82 and controls switching of the gas supply unit 84. A monitor 86 for detecting the concentration of the processing gas is provided between the exhaust port 65 and the exhaust device 82, and a result detected by the monitor 86 is transmitted to the control unit 85. .
[0028]
The three support pins 58 described above are connected to a connecting member 91 at the lower part thereof, and the space where the connection is made is covered with a lower lid 87. The connecting member 91 is connected to a bar-shaped member 88 for driving up and down, and the bar-shaped member 88 extends outside through a hole 89 provided in the lower lid 87 and is connected to the external supporting member 57. An O-ring 90 for sealing is arranged between the connecting member 91 and the lower lid 87. When the support pin 58 is lowered and the wafer W is placed on the hot plate 60, the connecting member 91 and the lower An O-ring 90 is sandwiched between the cover 87 and the cover 87. Thereby, the tightness of the lower lid 87 is ensured, and as a result, the tightness in the sealed space S is ensured.
[0029]
In the guide room 67, a partition plate 68 for vertically partitioning the inside of the guide room 67 is provided. The only one supply path 66 is provided outside the bottom surface of the lower chamber 69 partitioned by the partition plate 68, and the lower chamber 69 is connected to the upper chamber 70 partitioned by the partition plate 68 inside the lower chamber 69. Are in communication between With the upper and lower chamber structure, the substantial distance that the processing gas passes through the guide chamber 67 can be increased, and the effect of temperature control by the heat storage of the processing gas in the guide chamber 67 can be further enhanced. In addition, the effect of the processing gas flowing around in the guide chamber 67 can be further enhanced, and the processing gas can be more uniformly supplied onto the wafer W.
[0030]
On the bottom surface of the lower chamber 69, for example, four guide grooves 71 for guiding the processing gas supplied from the gas supply unit 84 along the outer periphery of the back surface of the hot plate 60 are provided. As shown in FIG. 10, each time the guide groove 71 goes inward, the guide groove 71 branches twice in two directions and draws a circle on the innermost peripheral side. 8 and 9, the upper chamber 70 has, for example, four annular guide plates 72 to 75 for guiding the processing gas supplied from the gas supply unit 84 along the outer periphery of the back surface of the hot plate 60. Is provided. The guide plate 72 arranged at the innermost periphery is arranged on the partition plate 68 and has a gap with the back surface of the hot plate 60, and the next guide plate 73 is arranged on the back surface of the hot plate 60, and The next guide plate 74 is arranged on the partition plate 68, has a gap with the back surface of the hot plate 60, and the outermost guide plate 75 is arranged on the back surface of the hot plate 60, There is a gap between the partition plate 68. A gap 76 is provided between the inner periphery of the processing chamber main body 52 and the outer edge of the hot plate 60, and the processing gas and the nitrogen (N 2 ) Gas is supplied.
[0031]
Next, the operation of the SOD system 1 configured as described above will be described. FIG. 11 shows a processing flow in the SOD system 1.
[0032]
First, in the cassette block 10, the unprocessed wafer W is transferred from the wafer cassette CR to the transfer table in the transfer / cooling plate (TCP) belonging to the third set G3 on the processing block 11 side via the wafer transfer body 21.
[0033]
The wafer W transferred to the transfer table in the transfer / cooling plate (TCP) is transferred to the cooling processing station (CPL) via the main wafer transfer mechanism 22. Then, in the cooling processing station (CPL), the wafer W is cooled to a temperature suitable for processing in the SOD coating processing station (SCT) (step 901).
[0034]
The wafer W cooled at the cooling processing station (CPL) is transferred to the SOD coating processing station (SCT) via the main wafer transfer mechanism 22. Then, in the SOD coating station (SCT), the wafer W is subjected to the SOD coating process (Step 902).
[0035]
The wafer W on which the SOD coating processing has been performed at the SOD coating processing station (SCT) is transferred to the aging processing station (DAC) via the main wafer transfer mechanism 22. In the processing chamber 51 of the aging processing station (DAC), the wafer W is received from the main wafer transfer mechanism 22 with the support pins 58 protruding from the surface of the hot plate 60. Next, the support pins 58 are lowered to be placed on the hot plate 60, and the lid 53 is lowered so that the close contact surface of the outer periphery of the cover 53 and the close contact surface of the processing chamber main body 52 are in close contact with each other. A closed space S is formed in 51. Then, a processing gas containing vaporized ammonia (NH3) is supplied to the closed space S in the processing chamber 51 via the supply path 66. Thus, an aging process is performed on the wafer W, and a process for gelling the insulating film material on the wafer W is performed (step 903). In the present embodiment, the processing gas supplied via the supply path 66 flows around the inside of the outer periphery of the back surface of the hot plate 60 of the guide chamber 67 through the guide groove 71 and the guide plates 72 to 75 in the guide chamber 67. Since the processing gas is supplied from the guide chamber 67 to the surface of the hot plate 60 via the gap 76 between the inner periphery of the processing chamber main body 52 and the outer edge of the hot plate 60, a simple configuration is provided. Thus, the processing temperature in the processing chamber 51 can be kept constant, and the processing gas can be uniformly supplied onto the wafer W. Then, a nitrogen gas is supplied into the processing chamber 51 through the supply path 66 to prevent diffusion of ammonia, and the inside of the processing chamber 51 is purged. Next, the lid 53 is raised and the support pins 58 are raised to transfer the wafer W to the main wafer transfer mechanism 22. Incidentally, when the processing in the processing chamber 51 is not performed, usually, the lid 53 is closed. Thereby, leakage of the processing gas is further reduced.
In the present embodiment, the processing time is shortened particularly when the concentration of the processing gas at the time of processing is high based on the detection result of the monitor 86 by the control unit 85, and conversely, when the concentration of the processing gas at the time of processing is low. Is controlled to extend the processing time. Thereby, uniform processing can be performed.
[0036]
The wafer W that has been aged at the aging processing station (DAC) is transferred to the solvent exchange processing station (DSE) via the main wafer transfer mechanism 22. Then, at the solvent exchange processing station (DSE), a chemical solution for exchange is supplied to the wafer W, and a process of replacing the solvent in the insulating film applied on the wafer with another solvent is performed (step 904).
[0037]
The wafer W that has undergone the replacement processing at the solvent exchange processing station (DSE) is transferred to the low-temperature heating processing station (LHP) via the main wafer transfer mechanism 22. Then, the wafer W is subjected to a low-temperature heat treatment at a low-temperature heat treatment station (LHP) (step 905).
[0038]
The wafer W subjected to the low-temperature heat treatment at the low-temperature heat treatment station (LHP) is transferred to the low-oxygen high-temperature heat treatment station (OHP) via the main wafer transfer mechanism 22. Then, at the low-oxygen high-temperature heat treatment station (OHP), the wafer W is subjected to high-temperature heat treatment in a low-oxygen atmosphere (step 906).
[0039]
The wafer W that has been subjected to the high-temperature heat treatment at the low-oxygen high-temperature heat treatment station (OHP) is transferred to the low-oxygen cure / cooling treatment station (DCC) via the main wafer transfer mechanism 22. Then, in the low oxygen curing / cooling processing station (DCC), the wafer W is subjected to a high-temperature heat treatment in a low oxygen atmosphere and cooled (step 907).
[0040]
The wafer W processed in the low-oxygen curing / cooling processing station (DCC) is transferred to a cooling plate in a transfer / cooling plate (TCP) via the main wafer transfer mechanism 22. Then, the wafer W is cooled in the cooling plate of the transfer / cooling plate (TCP) (Step 908).
[0041]
The wafer W cooled by the cooling plate of the transfer / cooling plate (TCP) is transferred to the wafer cassette CR via the wafer transfer body 21 in the cassette block 10.
[0042]
Next, another embodiment of the present invention will be described.
[0043]
FIG. 12 is a view for explaining a configuration of a lid in a processing chamber according to another embodiment of the present invention.
[0044]
In this embodiment, as shown in FIG. 12, the exhaust port 95 has a larger diameter than the exhaust port 65 in the above-described embodiment, and a large number of through holes 96 are provided so as to close the exhaust port 95. The member 97 is disposed.
[0045]
With such a configuration, turbulence does not occur above the wafer W during processing, and processing can be performed uniformly. According to experiments by the present inventors, there was no problem that a stripe pattern was generated on the surface of the wafer W by performing the processing with such a configuration.
[0046]
FIG. 13 is a view for explaining a configuration of a processing chamber according to another embodiment of the present invention.
[0047]
In this embodiment, as shown in FIG. 13, an exhaust port 98 and a valve 99 for opening and closing the exhaust port 98 are provided at a lower portion of the outer periphery of the main body 52. I use it to exhaust. Thus, the processing gas can be efficiently purged.
[0048]
The present invention is not limited to the above-described embodiment, but can be variously modified. For example, the substrate to be processed is not limited to a semiconductor wafer, but may be another substrate such as an LCD substrate. Further, the type of the film is not limited to the interlayer insulating film. In addition, although it has been described that there is only one supply path 66, it goes without saying that a plurality of supply paths 66 may be provided. Further, a predetermined amount of the processing gas and the nitrogen gas can be supplied at a low flow rate, and the temperature control ability of the processing gas and the nitrogen gas can be further improved.
[0049]
【The invention's effect】
As described above, according to the present invention, temperature control or the like of the feedback system is not required, the processing temperature can be kept constant with a simple configuration, and the processing gas supplied from the supply means is supplied to the guide chamber. The processing gas can be supplied to the substrate after being wrapped around the inside of the outer periphery of the back surface of the hot plate, and the processing gas can be uniformly supplied to the substrate.
[Brief description of the drawings]
FIG. 1 is a plan view of an SOD system according to an embodiment of the present invention.
FIG. 2 is a front view of the SOD system shown in FIG.
FIG. 3 is a rear view of the SOD system shown in FIG. 1;
4 is a perspective view of a main wafer transfer mechanism in the SOD system shown in FIG.
FIG. 5 is a sectional view of the aging processing station according to the embodiment of the present invention.
FIG. 6 is a plan view of the aging processing station shown in FIG. 5;
FIG. 7 is a sectional view of the processing chamber shown in FIGS. 5 and 6;
8 is a view as viewed in the direction of the arrow A in FIG. 7;
9 is a view as viewed in the direction of the arrow B in FIG. 7;
FIG. 10 is a view as seen from the arrow C in FIG. 7;
FIG. 11 is a processing flowchart of the SOD system shown in FIG. 1;
FIG. 12 is a diagram illustrating a configuration of a lid in a processing chamber according to another embodiment of the present invention.
FIG. 13 is a view for explaining a configuration of a processing chamber according to another embodiment of the present invention.
[Explanation of symbols]
51 Processing chamber 60 Hot plate 65 Exhaust hole 66 Supply path 67 Guide chamber 71 Guide grooves 72 to 75 Guide plate W Wafer

Claims (11)

A processing chamber for processing the substrate;
A hot plate disposed in the processing chamber, having first and second surfaces, and performing a heat treatment while holding a substrate on the first surface;
Supply means for supplying a processing gas into the processing chamber,
Exhaust means for exhausting the inside of the processing chamber;
A guide chamber provided along the inner periphery of the second surface of the hot plate, for temporarily storing the processing gas supplied from the supply means and guiding the processing gas from the outer edge of the hot plate toward the surface of the hot plate; and equipped with,
The substrate processing apparatus , wherein the guide chamber guides the processing gas supplied from the supply unit along an outer periphery of a back surface of the hot plate, and includes a guide plate connected to the hot plate . A processing chamber for processing the substrate;
A hot plate disposed in the processing chamber, having first and second surfaces, and performing a heat treatment while holding a substrate on the first surface;
Supply means for supplying a processing gas into the processing chamber,
Exhaust means for exhausting the inside of the processing chamber;
A guide chamber provided along the inner periphery of the second surface of the hot plate, for temporarily storing the processing gas supplied from the supply means and guiding the processing gas from the outer edge of the hot plate toward the surface of the hot plate; and With
The substrate processing apparatus according to claim 1, wherein the guide chamber includes a guide path having a guide groove for guiding the processing gas supplied from the supply unit along the outer periphery of the back surface of the hot plate. In the substrate processing apparatus according to claim 1 or 2, wherein,
The said processing means is provided with the temperature control part which controls the temperature of the said process gas, The substrate processing apparatus characterized by the above-mentioned. In the substrate processing apparatus according to claim 1 or 2, wherein,
The substrate processing apparatus further comprises a means for supplying a gas for purging the guide chamber to the guide chamber. The substrate processing apparatus according to claim 1 or 2 ,
The substrate processing apparatus, wherein the supply unit supplies a processing gas to the guide chamber from one location. In the substrate processing apparatus according to claim 1 or 2, wherein,
The substrate is coated with a coating liquid in which particles or colloids are dispersed in a solvent,
A substrate processing apparatus, wherein the processing gas contains vaporized ammonia . The substrate processing apparatus according to claim 1, wherein
The processing chamber is
A main body on which the hot plate is arranged so that the first surface is an exposed surface;
A lid that is disposed so as to be able to approach and separate from the main body and forms a closed space for processing a substrate between the main body and the main body when the main body is in contact with the main body. Substrate processing equipment. The substrate processing apparatus according to claim 7 ,
The lid has an exhaust port for exhaust at a position corresponding to substantially the center of the substrate held by the hot plate,
The substrate processing apparatus, wherein the exhaust unit exhausts the inside of the closed space through the exhaust port. The substrate processing apparatus according to claim 8 ,
The substrate processing apparatus further comprises a member arranged to close the exhaust port and provided with a plurality of through holes. The substrate processing apparatus according to claim 7 ,
The substrate processing apparatus characterized by further be provided with a lid body temperature control mechanism for temperature control of the lid. The substrate processing apparatus according to claim 1, wherein
Means for detecting the concentration of the processing gas in the processing chamber;
A substrate processing apparatus, characterized in that the basis of the detected density, further comprising a means for controlling the processing time for processing a substrate in the processing chamber.

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