JP3530810B2 - Substrate processing method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to a technical field such as a manufacturing process of a semiconductor device, and in particular, for example, a sol-like coating in which particles or colloids are dispersed as an insulating film material on a substrate and dispersed in an organic solvent. The present invention relates to a substrate processing method for performing gelation treatment when gelating a film.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
For example, SOD (Spin on Dielectric)
c) The system forms an interlayer insulating film. This S
In the OD system, a coating film is spin-coated on a wafer by a sol-gel method or the like, and a chemical treatment or a heat treatment is performed to form an interlayer insulating film.

When forming an interlayer insulating film by, for example, the sol-gel method, first, a colloid of an insulating film material, for example, TEOS (tetraethoxysilane) is placed on a semiconductor wafer (hereinafter referred to as "wafer") as an organic solvent. The solution dispersed in is supplied. Next, the wafer supplied with the solution is subjected to gelation treatment, and then the solvent is replaced. Then, the wafer in which the solvent is replaced is heat-treated.

[0004]

In the step of gelling (aging) the wafer among these series of steps, for example, a processing gas in which ammonia gas and water vapor are mixed is supplied and exhausted. The wafer is heat-treated at about 100 ° C. on the hot plate in the processing chamber. Since the processing gas contains water vapor as described above, T contained in the coating film applied as the insulating film material is reduced.
The EOS colloid is gelled and linked in a mesh. Moisture is contained in the coating film immediately after gelation, and after replacing the moisture in the coating film with another solvent, the solvent is removed,
An insulating film is obtained by drying. Alternatively, the water content in the coating film is removed and the coating film is dried to obtain an insulating film. There is a problem that the time required for the entire processing time for removing the water in the coating film is extremely long.

Therefore, in order to solve such a problem, it can be considered to reduce the ratio of water vapor contained in the processing gas, for example. However, in that case, T
There is a problem that the reaction rate of the EOS colloid gelling and chain-linking becomes slow, and the time required for the aging treatment becomes very long. Further, since moisture acts as a heat transfer medium that transfers heat from the hot plate to the wafer during heating, if the moisture is low, the heat transferred from the hot plate to the coating film applied on the wafer will vary, resulting in formation. Unevenness occurs on the surface of the formed interlayer insulating film. Then, such unevenness causes defective insulation of the wiring formed thereon.

The present invention has been made under such circumstances, and an object thereof is to provide a substrate processing method capable of uniformly heating a substrate while shortening the processing time.

[0007]

In order to achieve such an object, a first aspect of the present invention is to introduce a substrate into a processing chamber in which a substrate is placed while introducing a processing gas in which an alkaline gas and water vapor are mixed. There is provided a substrate processing method including a step of heating the substrate, and a step of reducing a ratio of water vapor in the processing gas after a predetermined time has elapsed after introducing the processing gas into the processing chamber.

With such a structure, the amount of water contained in the coating film after being exposed to the processing gas can be reduced, and the processing time required for removing this water can be shortened.

A second aspect of the present invention is that the substrate is arranged.
Processing in which alkaline gas and water vapor are mixed in the processing chamber
Heating the substrate while introducing gas, and the treatment
Before a predetermined time has passed since the gas was introduced into the processing chamber
And a step of reducing the proportion of water vapor in the processing gas.
In the substrate processing method, the processing gas is the processing chamber.
It is characterized in that it is introduced by gradually increasing the amount
It A third aspect of the present invention is a processing chamber in which a substrate is placed.
The treated gas, which is a mixture of alkaline gas and water vapor, is introduced into
The process of heating the substrate while entering the
The processing gas is introduced after a predetermined time has passed since it was introduced into the processing chamber.
Substrate treatment with reducing the rate of water vapor in the body
In the method, the treatment chamber is gradually pressurized.
Characterize. A fourth aspect of the present invention is that the substrate is arranged.
Processing in which alkaline gas and water vapor are mixed in the processing chamber
Heating the substrate while introducing gas, and the treatment
Before a predetermined time has passed since the gas was introduced into the processing chamber
And a step of reducing the proportion of water vapor in the processing gas.
In the substrate processing method, the inside of the processing chamber is lower than atmospheric pressure.
Be decompressed to pressure and then pressurized above normal pressure
Is characterized by.

[0010]

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

This embodiment uses the substrate processing method of the present invention to form an SOD (S) for forming an interlayer insulating film on a wafer.
It is applied to a pin on Dielectric processing system. 1 to 3 are diagrams showing the overall configuration of this SOD processing system, FIG. 1 being a plan view and FIG.
Is a front view and FIG. 3 is a rear view.

In this SOD processing system 1, a plurality of semiconductor wafers (hereinafter, referred to as wafers) W as substrates are loaded into or unloaded from the system by a plurality of wafer cassettes CR, for example, in units of 25 wafers. The cassette block 10 for loading / unloading the wafer W to / from the cassette CR, and 1 in the SOD coating process
The processing block 11 is formed by arranging a plurality of single-wafer processing stations that perform predetermined processing on the wafers W one by one at predetermined positions, and a bottle of ammonia water, a bubbler, a drain bottle, etc. required in the aging process. It has a configuration in which the installed cabinet 12 is integrally connected.

In the cassette block 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, up to four wafer cassettes CR are provided at the positions of the projections 20a on the cassette mounting table 20, with their respective wafer entrances / outlets directed toward the processing block 11 side. A wafer carrier 21 that is placed in a line in the direction and is movable in the cassette arrangement direction (X direction) and in the wafer arrangement direction (Z vertical direction) of the wafers stored in the wafer cassette CR is selectively provided in each wafer cassette CR. It is designed to be accessed. Further, the wafer transfer body 21 is configured to be rotatable in the θ direction, and as will be described later, the third side of the processing block 11 side.
It is also possible to access the transfer / cooling plate (TCP) belonging to the multi-stage station of the set G3.

In the processing block 11, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 22 is provided at the center, and all the processing stations are surrounded by one or a plurality of stages. It is located in. In this example,
In the multi-stage arrangement configuration of four sets G1, G2, G3, G4, the multi-stage stations of the first and second sets G1, G2 are juxtaposed on the front side (front side in FIG. 1) of the system and the multi-stage of the third set G3 The stations are arranged adjacent to the cassette block 10, and the multi-tier stations of the fourth set G4 are arranged adjacent to the cabinet 12.

As shown in FIG. 2, in the first set G1, the wafer W is placed on the spin chuck in the cup CP, the insulating film material is supplied, and the wafer is rotated to make a uniform insulating film material on the wafer. SOD coating processing station (SCT) for coating the wafer W on the spin chuck in the cup CP to supply exchange chemicals such as HMDS and heptane to dry the solvent in the insulating film coated on the wafer. A solvent exchange processing station (DSE) that performs a process of replacing with another solvent is stacked in two stages in order from the bottom.

In the second group G2, the SOD coating processing station (SCT) is arranged in the upper stage. It is also possible to arrange an SOD coating processing station (SCT), a solvent exchange processing station (DSE) or the like below the second group G2, if necessary.

As shown in FIG. 3, in the third set G3, 2
A low oxygen high temperature heat treatment station (OHP), a low temperature heat treatment station (LHP), two cooling treatment stations (CPL), a transfer / cooling plate (TCP), and a cooling treatment station (CPL). They are arranged in multiple stages from the top. Here, the low oxygen high temperature heat treatment station (OHP) has a hot plate on which the wafer W is placed in a process chamber that can be hermetically sealed, and the process chamber is uniformly discharged with N ₂ from holes on the outer periphery of the hot plate. Exhaust from the upper center,
The wafer W is heated at a high temperature in a low oxygen atmosphere. The low temperature heat treatment station (LHP) has a hot plate on which the wafer W is placed, and heats the wafer W at low temperature. The cooling processing station (CPL) has a cooling plate on which the wafer W is placed, and cools the wafer W. The transfer / cooling plate (TCP) has a two-stage structure having a cooling plate for cooling the wafer W in the lower stage and a transfer table in the upper stage, and transfers the wafer W between the cassette block 10 and the processing block 11.

In the fourth set G4, a low temperature heat treatment station (LHP), two low oxygen cure / cool treatment stations (DCC) and an aging treatment station (D).
AC) are arranged in multiple stages in order from the top. here,
The low oxygen curing / cooling processing station (DCC) has a hot plate and a cooling plate adjacent to each other in a process chamber that can be hermetically sealed, and performs high temperature heat treatment and heat treatment in a low oxygen atmosphere substituted with N _2. The wafer W is cooled. The aging processing station (DAC) introduces a processing gas (NH ₃ + H ₂ O) in which ammonia gas, which is an alkaline gas, and water vapor are mixed into a hermetically sealed processing chamber to perform aging processing on the wafer W, The upper insulating film material is wet-gelled.

FIG. 4 is a perspective view showing the outer appearance of the main wafer transfer mechanism 22. The main wafer transfer mechanism 22 is a cylindrical support composed of a pair of wall portions 25, 26 which are connected to each other at the upper and lower ends and face each other. Inside the body 27, a wafer transfer device 30 that can move up and down (Z direction) is installed. The cylindrical support 27 is connected to the rotation shaft of the motor 31, and is rotated integrally with the wafer transfer apparatus 30 about the rotation shaft by the rotation driving force of the motor 31. Therefore, the wafer transfer device 30 is rotatable in the θ direction. For example, three tweezers are provided on the transfer base 40 of the wafer transfer device 30. These tweezers 4
1, 42 and 43 are both wall portions 2 of the tubular support 27.
It has such a shape and size as to be able to pass through the side opening 44 between 5 and 26, and is configured to be movable back and forth along the X direction. Then, the main wafer transfer mechanism 22
Accesses the processing stations arranged around the tweezers 41, 42 and 43 to transfer the wafer W to and from these processing stations.

FIG. 5 is a sectional view of the aging processing station (DAC) described above, and FIG. 6 is a plan view thereof. Figure 7
FIG. 8 is a sectional view showing the structure of a processing chamber in the aging processing station (DAC), and FIG. 8 is a plan view thereof.

As shown in FIGS. 5 and 6, a processing chamber 51 is arranged at the center of the aging processing station (DAC). The processing chamber 51 includes a processing chamber main body 52 and this processing.
The chamber body 52 has a lid 53 that can be moved up and down. Further, two lifting cylinders 54 and 55 are arranged so as to be adjacent to the processing chamber 51. The elevating cylinder 54 is connected to the lid 53 via a support member 56, and drives the lid 53 to elevate. Also lifting cylinder 55
Is connected to three support pins 58, which will be described later, via a support member 57 and drives the support pins 58 up and down.

As shown in FIGS. 7 and 8, the processing chamber main body 5
A heating plate 60 is arranged substantially at the center of 2. A heater (not shown) is built in the heating plate 60. The heating plate 60 is heated by a heater to a temperature for performing an aging process, for example, around 100 ° C. In addition, a plurality of, for example, 3
The holes 61 are provided concentrically. The support pin 58 described above is arranged in each hole 61 so as to be retractable from the surface of the heating plate 60. The support pins 58 transfer the wafer W to and from the main wafer transfer mechanism 22 while protruding from the surface of the heating plate 60. The support pin 58 that has received the wafer W from the main wafer transfer mechanism 22 descends to lower the heat plate 60.
The wafer W is immersed in the wafer W, so that the wafer W is placed on the heating plate 60 and the wafer W is heated. Further, a proximity sheet 62a for floating and holding the wafer W on the hot plate 60 without adhering to the hot plate 60 is provided at a plurality of locations on the outer surface of the wafer W mounting position on the surface of the hot plate 60.
For example, they are arranged at 6 places. The proximity sheets 62a extend to the outside of the wafer W mounting position, and the guides 63 for guiding the wafer W are arranged at the extended positions of the proximity sheets 62a. .

As described above, the lid 53 is arranged above the processing chamber main body 52 so as to be able to move up and down. The contact surface of the processing chamber body 52 the outer periphery of the lid 53, the sealing member 62 is arranged, also the suction holes 64 connected to a vacuum device (not shown) on the contact surface is plurality et al There is. Then, with the lid 53 lowered, the suction holes 64 are evacuated, and the close contact surface of the outer periphery of the lid 53 and the processing chamber main body 52.
It is configured to form a closed space S in the processing chamber 51 by making close contact with the contact surface. Further, approximately the center of the lid 53,
That is, the exhaust hole 65 connected to the exhaust device 81 is provided in the upper center of the heating plate 60.

A supply passage 66 connected to a supply device 82 for supplying the processing gas into the processing chamber 51 and the nitrogen (N ₂ ) gas for purging is provided near the outer periphery of the back surface of the processing chamber main body 52. . A guide chamber 67 that temporarily stores the processing gas supplied from the supply device via the supply path 66 along the inner periphery of the back surface of the hot plate 60 and guides it from the outer edge of the hot plate 60 toward the front surface of the hot plate 60. Is provided.

A partition plate 68 for partitioning the inside of the guide chamber 67 into upper and lower parts is provided in the guide chamber 67. The supply passage 66 is provided outside the bottom surface of the lower chamber 69 partitioned by the partition plate 68, and the lower chamber 69 inside the lower chamber 69 is partitioned by the partition plate 68 into the upper chamber 70.
Is in communication with.

Further, on the bottom surface of the lower chamber 69, for example, four annular guide grooves 71 for guiding the processing gas supplied from the supply device along the outer periphery of the back surface of the heating plate 60 are provided. Further, in the upper chamber 70, an annular guide plate 72 for guiding the processing gas supplied from the supply device along the outer periphery of the back surface of the heating plate 60.
4 to 75 are provided. The guide plate 72 arranged on the innermost periphery is arranged on the partition plate 68 and has a gap between it and the back surface of the heat plate 60, and the next guide plate 73 is arranged on the back surface of the heat plate 60 and separates from the partition plate 68. And the next guide plate 74 is arranged on the partition plate 68, and there is a gap with the back surface of the heat plate 60, and the outermost guide plate 75 is arranged on the back surface of the heat plate 60. There is a gap with the partition plate 68. A gap 76 is provided between the inner periphery of the processing chamber main body 52 and the outer edge of the heating plate 60, and the heating chamber 6 is guided from the guide chamber 67 through the gap 76.
The processing gas and the nitrogen (N ₂ ) gas for purging are supplied to the surface of No. 0.

The controller 83 controls the operations of the exhaust device 81, the supply device 82, etc. described above. For example, the exhaust device 81 controls the exhaust amount, the supply device 82 controls the introduction amount (introduction pressure) of the processing gas or nitrogen gas to be supplied, and further controls the ratio of water vapor of the processing gas to be supplied. The pressure in the processing chamber 51 is controlled by controlling the exhaust amount of the exhaust device 81 and the introduction amount of the processing gas or nitrogen gas by the supply device 82. A heater is incorporated in the supply device 82, and the nitrogen gas and water introduced into the supply device 82 are temperature-controlled by this heater and supplied as a processing gas. The adjustment of the rate of water vapor of the processing gas is performed by adjusting the temperature of the heater.

A pressure sensor 84 for detecting the pressure in the processing chamber 51 is arranged in the processing chamber 51, and the detection result of the pressure sensor 84 is transmitted to the control section 83. ing.

Next, the operation of the SOD processing system 1 thus configured will be described. Figure 9 shows this SO
The processing flow in D processing system 1 is shown.

First, in the cassette block 10, the unprocessed wafer W is transferred from the wafer cassette CR to the wafer carrier 2.
1 is transferred to the transfer table in the transfer / cooling plate (TCP) belonging to the third set G3 on the processing block 11 side.

The wafer W transferred to the transfer table in the transfer / cooling plate (TCP) is transferred to the cooling processing station (CPL) via the main wafer transfer mechanism 22. Then, in the cooling processing station (CPL), the wafer W is processed by the SOD coating processing station (SCT).
(Step 901).

The wafer W cooled in the cooling processing station (CPL) is transferred to the SO through the main wafer transfer mechanism 22.
It is transported to the D coating processing station (SCT). Then, in the SOD coating processing station (SCT), the wafer W is subjected to SOD coating processing (step 90).
2).

The wafer W which has been subjected to the SOD coating processing at the SOD coating processing station (SCT) is transferred to the aging processing station (DAC) through the main wafer transfer mechanism 22. In the processing chamber 51 of the aging processing station (DAC), the wafer W is received from the main wafer transfer mechanism 22 with the support pins 58 protruding from the surface of the hot plate 60. Next, the support pin 58 descends and is placed on the hot plate 60, and the lid 53 descends and the close contact surface of the outer periphery of the cover 53 and the close contact surface of the processing chamber main body 52 come into close contact with each other. 51
A closed space S is formed inside. Then, the processing gas is supplied from the supply device 82 to the closed space S in the processing chamber 51 through the supply path 66.

FIG. 10 shows a temporal change of the pressure in the processing chamber when the processing gas and then the nitrogen gas are supplied into the processing chamber 51 and the ratio of the water vapor contained in the processing gas introduced into the processing chamber 51 with respect to time. It is an example showing a change.

By controlling the exhaust amount by the exhaust device 81 and the introduction amount of the processing gas by the supply device 82 as described above, for example, first, the closed space S in the processing chamber 51 is changed from normal pressure to the first pressure of 2000 Pa. And the state is maintained for, for example, about 20 seconds (period in FIG. 10).

After that, the closed space S in the processing chamber 51 is opened to 20
The pressure is increased from 00 Pa to the second pressure, for example, 3000 Pa, and this state is maintained for, for example, about 40 seconds (FIG. 10).
Period).

Here, when, for example, about 40 seconds have passed since the start of such processing (the period of FIG. 10), the ratio of the water vapor contained in the processing gas introduced into the processing chamber 51 is decreased, and then 20 times. The decrease is continued for about a second (until the end of the treatment with the treatment gas) (period in FIG. 10).
For example, it is preferable that the steam ratio is about 100 to 80% until about 40 seconds after the treatment is started, and finally the steam ratio is reduced to about 60 to 40%.

According to the above periods and, the processing chamber 51
The wafer W therein is aged by the processing gas,
The insulating film material on the wafer W is gelled (step 90).
3).

As described above, in this embodiment, since the ratio of the water vapor containing the processing gas is made relatively large for about 40 seconds from the start of the processing, the colloid of TEOS is gelled and chained in a mesh. Is promoted and the time required for the aging process is shortened. Furthermore, since the water is sufficiently supplied, the entire wafer surface to moisture row Kiwatari, moisture act as a heat transfer medium to transfer heat to the wafer from the hot plate, is uniformly heated with respect to the wafer W is carried out . After the gelation has proceeded to a certain extent, the proportion of water vapor in the processing gas is reduced, so that the amount of water in the coating film caused by the gelation is reduced. As a result, it is possible to shorten the processing time of the processing for replacing the water in the coating film with another solvent in the solvent exchange processing station (DSE) described later, and it is possible to shorten the overall processing time. The process at the solvent exchange processing station (DSE) can be omitted depending on the insulating film material. Even in this case, since it is necessary to remove the water content in the coating film, the time required for removing the water content in the coating film is shortened by reducing the water content in the coating film, and the overall processing time is reduced. It can be shortened.

Further, in this embodiment, the inside of the processing chamber 51 is kept at a first pressure higher than atmospheric pressure, for example, about 2000 Pa for about 20 seconds after the processing gas is introduced into the processing chamber 51, and then the processing chamber 51 is processed. Since the inner pressure is set to the second pressure higher than the first pressure, for example, about 3000 Pa, the interlayer insulating film having a desired film thickness can be formed on the wafer W without causing unevenness on the surface. The processing time can be shortened.

Then, in order to prevent the diffusion of the ammonia gas, the closed space S in the processing chamber 51 is once returned to normal pressure, and the nitrogen gas is supplied from the supply device 82 to the closed space S in the processing chamber 51 for about 10 seconds. Then, the closed space S in the processing chamber 51 is purged with nitrogen gas (period in FIG. 10).

Next, the lid 53 is raised and the support pins 58 are raised to transfer the wafer W to the main wafer transfer mechanism 22.

The wafer W aged in the aging processing station (DAC) is transferred to the main wafer transfer mechanism 22.
To the solvent exchange processing station (DSE). Then, in the solvent exchange processing station (DSE), the exchange chemical is supplied to the wafer W, and a process of replacing the solvent in the insulating film applied on the wafer with another solvent is performed (step 904).

The wafer W, which has been subjected to the replacement process at the solvent exchange processing station (DSE), is transferred to the low temperature heat processing station (LH) via the main wafer transfer mechanism 22.
P). Then, in the low temperature heat treatment station (LHP), the wafer W is subjected to the low temperature heat treatment (step 905).

The wafer W which has been subjected to the low temperature heat treatment at the low temperature heat treatment station (LHP) is transferred to the low oxygen high temperature heat treatment station (OHP) via the main wafer transfer mechanism 22. And low oxygen high temperature heat treatment station (OH
In P), the wafer W is subjected to high temperature heat treatment in a low oxygen atmosphere (step 906).

Low oxygen high temperature heat treatment station (OH
The wafer W which has been subjected to the high temperature heat treatment in P) is transferred to the low oxygen cure / cooling processing station (DCC) via the main wafer transfer mechanism 22. Then, in the low oxygen curing / cooling processing station (DCC), the wafer W is subjected to high temperature heating processing in a low oxygen atmosphere and cooling processing (step 907).

Low oxygen curing / cooling processing station (D
The wafer W processed in (CC) is transferred to the cooling plate in the transfer / cooling plate (TCP) via the main wafer transfer mechanism 22. And transfer / cooling plate (TC
On the cooling plate in P), the wafer W is cooled (step 908).

The wafer W cooled by the cooling plate in the transfer / cooling plate (TCP) is transferred to the wafer cassette CR via the wafer transfer body 21 in the cassette block 10.

The present invention is not limited to the above-described embodiment, but can be modified in various ways.

For example, the pressure may be finely changed during the period shown in FIG. This makes it possible to shorten the processing period.

In the above-described embodiment, a certain amount of process gas is supplied from the beginning, but FIG.
The amount of the processing gas to be supplied may be gradually increased as shown in FIG. By gradually changing the pressure in this way, the ammonia gas and water vapor in the processing gas can be efficiently vaporized so as not to become ammonia water.

Further, in the above-mentioned embodiment, the pressurization from normal pressure to 3000 Pa is performed stepwise.
By applying pressure stepwise as described above, the application of pressure is performed after the film quality is stabilized, so that an insulating film with good film quality can be obtained. However, the pressure may be gradually changed as shown in FIG. 12 without changing the pressure stepwise.

In the above embodiment, the pressure is increased from normal pressure to 3000 Pa. However, as shown in FIG. 13, the pressure may be once reduced from normal pressure to −1000 Pa and then increased to 3000 Pa. As described above, by initially reducing the pressure, the time for the processing gas to fill the processing chamber can be shortened, and for example, the processing time can be shortened by about 5 seconds as compared with the above-described embodiment.

Further, in the above-mentioned embodiment, the pressure in the processing chamber is raised in two stages, but the pressure in the processing chamber may be raised in three stages as shown in FIG. Can be shortened.

Further, the aging treatment time, the supply state of water vapor, etc. may be appropriately adjusted depending on the insulating film material. The temperature of the processing gas to be supplied is, for example, 30 to 40 ° C., but the temperature of the processing gas may be appropriately adjusted depending on the insulating film material.

Further, depending on the insulating film material, there is a material which shrinks and decreases when the temperature rises. When such an insulating film material is used, it is necessary to lower the temperature of the process gas during the aging process, and the supply device 82 in the above-described embodiment can be cooled to a temperature of, for example, 20 ° C. instead of the heater. Cooling means can be incorporated. As the cooling means, for example, temperature-controlled water having a temperature near the set temperature can be indirectly passed. By storing ammonia water in a device having such a cooling means and bubbling ammonia gas into the ammonia water, it is possible to generate ammonia gas containing water vapor as a processing gas.

In the present invention, the substrate to be processed is not limited to the semiconductor wafer, but may be another substrate such as an LCD substrate. The type of film is not limited to the interlayer insulating film.

[0059]

As described above, it is possible to uniformly heat the substrate while shortening the processing time.

[Brief description of drawings]

FIG. 1 is a plan view of an SOD processing system according to an embodiment of the present invention.

FIG. 2 is a front view of the SOD processing system shown in FIG.

FIG. 3 is a rear view of the SOD processing system shown in FIG.

4 is a perspective view of a main wafer transfer mechanism in the SOD processing system shown in FIG.

FIG. 5 is a sectional view of an aging processing station according to the embodiment of the present invention.

FIG. 6 is a plan view of the aging processing station shown in FIG.

7 is a sectional view of the processing chamber shown in FIGS. 5 and 6. FIG.

FIG. 8 is a plan view of the processing chamber shown in FIG.

9 is a processing flowchart of the SOD processing system shown in FIG.

10 is a time-dependent change in pressure in the processing chamber when a processing gas and then nitrogen gas are supplied to the aging processing station (DAC) in the SOD processing system shown in FIG. 1 and processing introduced into the processing chamber. It is a figure which shows the time change of the ratio of the water vapor which contains gas.

FIG. 11 is a diagram showing a temporal change in pressure in the processing chamber and a temporal change in the ratio of water vapor contained in the processing gas introduced into the processing chamber in the aging processing station (DAC) according to another embodiment. .

FIG. 12 is a diagram showing a temporal change in pressure in the processing chamber and a temporal change in the ratio of water vapor contained in the processing gas introduced into the processing chamber in the aging processing station (DAC) according to still another embodiment. is there.

FIG. 13 is a diagram showing a temporal change in pressure in a processing chamber and a temporal change in a ratio of water vapor contained in a processing gas introduced into the processing chamber in an aging processing station (DAC) according to still another embodiment. is there.

FIG. 14 is a diagram showing a temporal change in pressure in a processing chamber and a temporal change in a ratio of water vapor contained in a processing gas introduced into the processing chamber in an aging processing station (DAC) according to still another embodiment. is there.

[Explanation of symbols]

51 processing room 60 hot plate 65 Exhaust hole 66 supply path 81 Exhaust device 82 supply device 83 Control unit 84 Pressure sensor W wafer

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Claims (8)

(57) [Claims] 1. A step of heating the substrate while introducing a treatment gas in which an alkaline gas and water vapor are mixed into a treatment chamber in which the substrate is disposed, and a predetermined period after introducing the treatment gas into the treatment chamber. in the substrate processing method and a step of reducing the proportion of water vapor in the process gas after the lapse of time, within a predetermined time after introducing the process gas into the processing chamber
Is a first pressure higher than atmospheric pressure in the processing chamber,
And a second pressure higher than the first pressure in the processing chamber.
And a substrate processing method. 2. The substrate processing method according to claim 1 , wherein the processing chamber is brought to a state close to normal pressure from the second pressure after a lapse of a predetermined time after the rate of water vapor in the processing gas is reduced. A substrate processing method, comprising: 3. The substrate processing method according to claim 2 , wherein after the inside of the processing chamber is brought to a state close to atmospheric pressure from the second pressure, the inside of the processing chamber is replaced with an inert gas. Substrate processing method. A step of wherein heating the substrate to the substrate while introducing a process gas of a mixture of gas and water vapor of alkaline processing chamber which is disposed a predetermined after introducing the process gas into the processing chamber A substrate processing method comprising: a step of reducing the proportion of water vapor in the processing gas after a lapse of time, wherein the processing gas is introduced into the processing chamber while gradually increasing its amount. . A step wherein the substrate is heating the substrate while introducing a process gas of a mixture of gas and water vapor of alkaline processing chamber which is disposed a predetermined after introducing the process gas into the processing chamber A substrate processing method comprising: a step of reducing a rate of water vapor of the processing gas after a lapse of time, wherein the processing chamber is gradually pressurized. A step wherein the substrate is heating the substrate while introducing gas and process gas and mixed with water vapor alkaline processing chamber which is disposed a predetermined after introducing the process gas into the processing chamber In the substrate processing method, which comprises a step of reducing the proportion of water vapor in the processing gas after a lapse of time, the processing chamber is depressurized to a pressure lower than atmospheric pressure, and then pressurized to a pressure higher than atmospheric pressure. Substrate processing method. 7. The substrate processing method according to claim 1 , wherein the substrate is coated with a coating liquid in which particles or colloids are dispersed in a solvent, and the coating liquid is mixed with the processing gas. A substrate processing method, wherein the alkaline gas is ammonia gas. 8. The substrate processing method according to claim 7 , wherein the particles or colloids are made of TEOS.