JP3606560B2 - Substrate processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus for forming an interlayer insulating film on a semiconductor wafer, for example.
[0002]
[Prior art]
In the manufacturing process of a semiconductor device, an interlayer insulating film is formed by, for example, an SOD (Spin on Dielectric) system. In this SOD system, an interlayer insulating film is formed by spin-coating a coating film on a wafer and applying chemical treatment or heat treatment.
[0003]
For example, when an interlayer insulating film is formed by a sol-gel method, an insulating film material such as a colloid of TEOS (tetraethoxysilane) is first dispersed in an organic solvent on a semiconductor wafer (hereinafter referred to as “wafer”). Supply the solution. Next, the wafer supplied with the solution is subjected to gelation, and then the solvent is replaced. Then, the wafer with the solvent replaced is subjected to a heat treatment.
[0004]
Such heat treatment includes a plurality of different temperature conditions such as a baking process for removing the solvent from the solvent on the wafer, a curing process for forming a film by a polymerization reaction, and a post-treatment process for generating a porous film. A heat treatment process is involved.
[0005]
In a conventional SOD system, wafers are carried between heat treatment apparatuses, for example, in units of lots using individual heat treatment apparatuses set to temperatures and pressures corresponding to these heat treatment steps.
[0006]
[Problems to be solved by the invention]
However, in such a system configuration, as a result, the waiting time of the wafer becomes long and the processing efficiency is poor. Therefore, for example, a coating device and a series of heat treatment devices necessary for the process of the SOD system are unitized, and these units are integrated, and a wafer is transferred between these units one by one by a transfer device. A leaf-type device configuration is conceivable.
[0007]
However, such an apparatus configuration has the following problems.
[0008]
First, since it is necessary to transfer wafers frequently between units, there is a problem that the total time required for transfer becomes longer and the processing efficiency is lowered. In addition, such a wafer transfer process often has adverse effects such as temperature control and particle adhesion.
[0009]
Second, the processing temperature in the heat treatment unit as described above reaches a fairly high temperature of, for example, about 800 ° C. at the maximum, so that there is a large thermal interference between the units including the coating unit and the like at a precise temperature. There is a problem that the coating process and the heat treatment cannot be performed.
[0010]
SUMMARY OF THE INVENTION Accordingly, a first object of the present invention is to provide a substrate processing apparatus capable of shortening the substrate transport time and improving the substrate processing efficiency.
[0011]
A second object of the present invention is to provide a substrate processing apparatus that can suppress thermal interference between units as much as possible.
[0012]
[Means for Solving the Problems]
In order to solve such a problem, a substrate processing apparatus of the present invention includes a partitioned first processing region and a second processing region, and an insulating film material is applied on the substrate in the first processing region. A heat-treating unit that disposes a plurality of types of heat treatments on the substrate on which the insulating film material has been applied by the application unit, and is disposed in the second processing region. A wall member provided with a temperature control part for adjusting the temperature inside is disposed so as to surround the second processing region, and at least the heating from the application part. processing It has the conveyance apparatus which conveys a board | substrate to a part.
Here, an inert gas may be introduced into the second processing region to further include a means for controlling the atmosphere of the second processing region with the inert gas. Moreover, you may further comprise the heat insulation member arrange | positioned between the said 1st process area | region and the said 2nd process area | region. Further, the plurality of types of heat treatment in the heat treatment section may include at least a heat treatment for baking the substrate and a heat treatment for curing the substrate.
[0013]
In the present invention, the substrate is transported from the coating unit to the heat treatment unit by the transport device, while the heat treatment unit performs a plurality of types of heat treatment on the substrate coated with the insulating film material by the coating unit. Since it comprised as mentioned above, conveyance of the board | substrate between heat processing parts can be suppressed as much as possible, and conveyance time can be shortened as much as possible. Accordingly, the substrate processing efficiency can be improved. In addition, since the number of heat treatment units can be reduced, the amount of heat generated in the entire system can be reduced, and as a result, thermal interference between units can be suppressed as much as possible.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0015]
1 to 3 are views showing an overall configuration of an SOD system according to an embodiment of the present invention. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.
[0016]
In this SOD system 1, a plurality of semiconductor wafers (hereinafter referred to as wafers) W as substrates are loaded into the system from the outside in units of 25 wafer cassettes CR, for example, in units of 25, or unloaded from the system. The cassette block 10 for loading / unloading the wafer W and various single-wafer processing units for performing predetermined processing on the wafer W one by one in the SOD coating process are arranged in multiple stages at predetermined positions. A first processing block 11 as a first processing area and a second processing area as a second processing area in which various single-wafer processing units for performing predetermined processing on the wafer W are arranged in multiple stages at predetermined positions. The processing block 12 is integrally connected.
[0017]
As will be described later, the SOD coating processing unit (SCT) is arranged in the first processing block 11 as the first processing region, and the second processing block 12 as the second processing region is in the heat treatment system. Processing units are arranged. In this way, the heat treatment system processing units are arranged in the second processing block 12 in a concentrated manner, and the coating treatment system processing units are arranged in the first processing block 11, which is an area different from this area. As a result, the heat treatment system processing unit is less likely to adversely affect the coating treatment system processing unit.
[0018]
In addition, a heat insulating wall 51 as a heat insulating member made of, for example, a vacuum layer is provided between the first processing block 11 as the first processing region and the second processing block 12 as the second processing region. ing. As described above, in addition to disposing the heat treatment system processing unit and the coating treatment system processing unit in separate regions, respectively, disposing such a heat insulating wall 51 between these regions. Thus, it is further less likely that the heat treatment processing unit has a thermal adverse effect on the coating treatment system processing unit.
[0019]
Further, an inert gas such as nitrogen gas is introduced into the second processing block 12 which is the second processing area above the second processing block 12, and the second processing area is the second processing area 12. An inert gas introduction section 52 for controlling the atmosphere in the processing block 12 by the inert gas is provided, and the second processing block 12 is a second processing region in the second processing block 12 below the second processing block 12. An exhaust part 53 for exhausting the air is provided. In this way, by controlling the atmosphere in the second processing block 12 which is the second processing region with the inert gas, it is possible to prevent oxidation during the heat treatment and transfer of the wafer W described later. Particularly, since the heat treatment units are intensively arranged in the second processing block 12, such atmosphere control can be performed efficiently.
[0020]
In the cassette block 10, as shown in FIG. 1, a plurality of, for example, up to four wafer cassettes CR are placed at the position of the protrusion 20a on the cassette mounting table 20 with their respective wafer entrances facing the first processing block 11 side. A wafer transfer body 21 which is placed in one direction and is movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z vertical direction) of the wafers stored in the wafer cassette CR is selectively provided to each wafer cassette CR. It comes to access. Further, the wafer transfer body 21 is configured to be rotatable in the θ direction, and as will be described later, a delivery / cooling plate (TCP) belonging to the multi-stage unit portion of the fourth group G4 on the first processing block 11 side. Can also be accessed.
[0021]
In the first processing block 11, as shown in FIG. 1, a first main transport body 22 of a vertical transport type is provided at the center, and all the processing units are arranged in one or more sets around it. Are arranged in multiple stages. In this example, the multi-stage arrangement configuration includes five groups G1, G2, G3, G4, and G5. The multistage units of the first and second groups G1 and G2 are juxtaposed on the front side of the system (front side in FIG. 1). The multistage unit of the fourth group G4 is arranged adjacent to the cassette block 10, and the multistage unit of the third group G3 is arranged adjacent to the second processing block 12.
[0022]
As shown in FIG. 2, in the first group G1 and the second group G2, the wafer W is placed on the spin chuck in the cup CP, the insulating film material is supplied, and the wafer is rotated to be uniform on the wafer. SOD coating processing unit (SCT) for coating an insulating film, and a solvent in the insulating film coated on the wafer by supplying a chemical solution for exchange such as HMDS and heptane by placing the wafer W on the spin chuck in the cup CP A solvent exchange processing unit (DSE) that performs a process of replacing the solvent with another solvent before the drying process is stacked in two stages from the bottom.
[0023]
In the second group G2, the SOD coating unit (SCT) is arranged in the upper stage. If necessary, an SOD coating processing unit (SCT), a solvent exchange processing unit (DSE), or the like can be arranged below the second group G2.
[0024]
In the SOD coating processing unit (SCT) and the solvent exchange processing unit (DSE), a solvent is applied onto the wafer W by a spin coating method. For example, a nozzle that discharges a solvent such as an insulating film material or a chemical solution for exchange is provided. Of course, a so-called scan coating method may be used in which a solvent is applied to the entire surface of the wafer W by scanning the wafer W in, for example, XY directions. By using such a scan coating method, it is possible to minimize the waste of the solvent.
[0025]
As shown in FIG. 3, in the third group G3, a delivery / cooling plate (TCP), two cooling processing units (CPL), and a transition unit (TRS) are arranged in multiple stages in order from the bottom.
[0026]
In the fourth group G4, a delivery / cooling plate (TCP), three cooling processing units (CPL), a transition unit (TRS), and a cooling processing unit (CPL) are arranged in multiple stages.
[0027]
The delivery / cooling plate (TCP) has a two-stage structure having a cooling plate for cooling the wafer W at the lower stage and a delivery table at the upper stage, and delivers the wafer W between the cassette block 10 and the first processing block 11. . Similarly, the transition unit (TRS) transfers the wafer W between the cassette block 10 and the first processing block 11. The cooling processing unit (CPL) has a cooling plate on which the wafer W is placed, and cools the wafer W.
[0028]
In the SOD system 1, as described above, the multi-stage unit of the fifth processing unit group G5 indicated by the broken line can be arranged on the back side of the first main transfer body. The multi-stage unit of the processing unit group G5 is configured to be able to shift laterally along the guide rail 25 as viewed from the first main transport body 22. Therefore, even when the multi-stage unit of the fifth processing unit group G5 is provided as shown in the figure, a space is secured by sliding along the guide rail 25, so that the first main transfer body 22 On the other hand, maintenance work can be easily performed from behind. Note that the multi-stage unit of the fifth processing unit group G5 is not limited to the linear slide shift along the guide rail 25 as described above, but as shown by the reciprocating rotation arrow of the one-dot chain line in FIG. Even if it is configured to be rotationally shifted outward, it is easy to secure a space for maintenance work on the first main transport body.
[0029]
In the second processing block 12, as described above, the sixth group G6 to which the unit that performs the heat treatment on the wafer W belongs is arranged on the front side of the system, and similarly, the unit that performs the heat processing on the wafer W belongs to the first group G6. Seven sets G7 are arranged on the back side of the system. Between the sixth set G6 and the seventh set G7, the second main transfer body that accesses the fourth set G4, the sixth set G6, and the seventh set G7 to transfer the wafer W The second main transport body 23 has a vertical transport type configuration similar to that of the first main transport body 22.
[0030]
The SOD system 1 is disposed in, for example, a clean room. For example, the first main transfer mechanism 22 is set to an atmosphere at a higher atmospheric pressure than the clean room set to the atmospheric pressure. Particles generated on the body 22 are discharged out of the SOD system 1, while particles in the clean room are prevented from entering the SOD system 1.
[0031]
As shown in FIGS. 2 and 3, in the sixth group G6, the multi-functional hot plate cure apparatus (MHC) irradiates the film with microwaves or electron beams in two stages, for example, at about 300 ° C. to 500 ° C. A microwave processing unit (MW) for heating and reforming, for example, an electron beam processing unit (EB) having a processing temperature of about 300 ° C. to 500 ° C., is provided in order from the bottom. On the other hand, in the seventh group G7, an aging treatment unit (DAC), two low-temperature heat treatment units (LHP) that heat-treat at a low temperature of about 80 ° C. to 250 ° C. An ultraviolet treatment unit (UV) for heating and reforming at about ~ 100 ° C is provided in order from the bottom. The aging unit (DAC) is, for example, NH in a processable chamber having a temperature of about 15 ° C to 80 ° C. ₃ + H ₂ O is introduced to age the wafer W, and the insulating film material film on the wafer W is wet-gelled.
[0032]
4 and 5 are a perspective view and a sectional view of the multi-functional hot plate curing apparatus (MHC).
[0033]
This multi-functional hot plate cure apparatus (MHC) has a heat treatment chamber 151 and a temperature adjustment treatment chamber 152 provided adjacent thereto. This heat treatment chamber 151 is formed so as to be able to be sealed by a mechanism of a gate valve 174 that can be opened and closed in order to transfer the wafer W to and from the temperature adjustment processing chamber 152.
[0034]
A heat plate 156 for heat-treating the wafer W is disposed at a substantially central portion in the heat treatment chamber 151. For example, a heater (not shown) is embedded in the hot plate 156, and the set temperature can be set to 80 to 250 ° C., for example. In addition, a plurality of, for example, three holes 157 are vertically penetrated through the heat plate 156, and support pins 158a for supporting the wafer W are inserted in the holes 157 so as to be movable up and down. . These support pins 158a are connected to and integrated with a communication member 159 on the back surface of the hot plate 156, and the communication member 159 is moved up and down by a lifting cylinder 160 disposed below the communication member 159. The support pin 158a protrudes or sunk from the surface of the hot plate 156 by the lifting / lowering operation of the lifting / lowering cylinder 160.
[0035]
A plurality of proximity pins 161 are arranged on the surface of the hot plate 156 so that the wafer W does not directly contact the hot plate 156 when the wafer W is heat-treated. This prevents static electricity from being charged on the wafer W during the heat treatment.
[0036]
Further, the heat treatment chamber 151 is provided with a nitrogen supply mechanism 162 for supplying an inert gas, for example, nitrogen gas, into the heat treatment chamber 151, and a control unit 167 is provided from a nitrogen supply port 182 formed in the upper portion. Nitrogen is supplied into the room according to the command. On the other hand, an oxygen supply mechanism 180 for supplying a reactive gas, for example, oxygen is provided in the heat treatment chamber 151, and oxygen is supplied into the chamber from an oxygen supply port 183 formed in the upper portion according to a command from the control unit 167. It comes to supply. This oxygen supply control is performed based on the measurement result of the oxygen sensor 172a that measures the oxygen concentration provided in the heat treatment chamber 151.
[0037]
On the other hand, an exhaust port 168 for decompression is provided in the lower part of the heat treatment chamber 151, and this exhaust port 168 is connected to, for example, a vacuum pump 170, and the operation of the vacuum pump 170 causes the inside of the heat treatment chamber 151 to be at atmospheric pressure. Also, it is possible to set a low atmospheric pressure, for example, around 0.1 torr.
[0038]
Further, a temperature sensor 172b for measuring the indoor temperature is attached to the heat treatment chamber 151. The measurement result by the temperature sensor 172b is transmitted to the control unit 167, and the control unit 167 adjusts the heating temperature of the hot plate 156 based on the measurement result.
[0039]
The temperature adjustment processing chamber 152 is provided with a window portion 181 for carrying the wafer W in and out of the second main transfer body 23. The window portion 181 is configured to be opened and closed by a shutter 164. Yes.
[0040]
Further, in the temperature adjustment processing chamber 152, a transfer temperature adjustment plate 176 for placing the wafer W and adjusting the temperature of the wafer W is configured to be movable in the horizontal direction along the guide plate 177a by the movement mechanism 177b. Has been. The set temperature of the transfer temperature adjusting plate 176 is, for example, 15 to 250 ° C., and the application temperature range of the wafer W to be temperature adjusted is, for example, 200 to 800 ° C. The transfer temperature adjusting plate 176 can enter the heat treatment chamber 151 via the gate valve 174, and receives the wafer W after being heated by the heat plate 156 in the heat treatment chamber 151 via the support pins 158a. Then, the wafer W is carried into the temperature adjustment processing chamber 152 and the temperature of the wafer W is adjusted.
[0041]
Below the transfer temperature control plate 176, a support pin 158b having the same configuration as the support pin 158a in the heat treatment chamber 151 is provided so as to be movable up and down. These support pins 158b are connected to and integrated with a support member 159 on the back surface of the transfer temperature adjusting plate 176, and the support member 159 is moved up and down by a lift cylinder 160 disposed below the support member 159.
[0042]
The vacuum pump 170 and the gas cylinders of the gas supply mechanisms 162 and 180 are arranged in a chemical chamber 30 disposed below a multi-functional hot plate cure apparatus (MHC) as shown in FIGS. It is set up.
[0043]
Next, processing steps of the SOD system 1 configured as described above will be described with reference to the flow shown in FIG.
[0044]
First, in the cassette block 10, the wafer W before processing is transferred from the wafer cassette CR via the wafer transfer body 21 to the transfer block or transfer unit (transition unit) in the transfer / cooling plate (TCP) belonging to the third group G 3 on the processing block 11 side. TRS).
[0045]
The wafer W transferred to the transfer table on the transfer / cooling plate (TCP) is transferred to the cooling processing unit (CPL) via the first main transfer body 22. In the cooling processing unit (CPL), the wafer W is cooled to a temperature suitable for processing in the SOD coating processing unit (SCT) (step 1).
[0046]
The wafer W cooled by the cooling processing unit (CPL) is transferred to the SOD coating processing unit (SCT) via the first main transfer body 22. In the SOD coating processing unit (SCT), the wafer W is subjected to SOD coating processing (step 2).
[0047]
The wafer W on which the SOD coating process is performed in the SOD coating processing unit (SCT) is transferred to the first main transfer body 22, the transfer / cooling plate (TCP) belonging to the fourth group G4, or the transition unit (TRS). Then, the film is transferred to the aging processing unit (DAC) through the second main transfer body 23 and subjected to the aging process, and the insulating film material on the wafer W is gelled (step 3).
[0048]
The wafer W subjected to the aging process by the aging process unit (DAC) is transferred to the second main transfer body 23, the transfer table in the transfer / cooling plate (TCP) belonging to the fourth group G4, or the transition unit (TRS), the first It is transferred to the solvent exchange processing unit (DSE) via the main transfer body 22. In the solvent exchange processing unit (DSE), the wafer W is supplied with an exchange chemical solution, and a process of replacing the solvent in the insulating film coated on the wafer with another solvent is performed (step 4).
[0049]
The wafer W that has been subjected to the replacement process in the solvent exchange processing unit (DSE) is transferred to the first main transfer body 22, the transfer / cooling plate (TCP) belonging to the fourth group G4, or the transition unit (TRS), It is conveyed to the low-temperature heat treatment unit (LHP) via the second main conveyance body 23. In the low-temperature heat processing unit (LHP), the wafer W is subjected to low-temperature heat processing (step 5).
[0050]
The wafer W that has been subjected to the low temperature heat treatment in the low temperature heat treatment unit (LHP) is transferred to the ultraviolet ray processing unit (UV) through the second main transfer body 23. In the ultraviolet processing unit (UV), the wafer W is processed with ultraviolet rays having a wavelength of about 172 nm (step 6). In the treatment with ultraviolet rays, nitrogen gas is jetted to make the inside of the ultraviolet treatment unit (UV) a nitrogen gas atmosphere, and in this state, ultraviolet rays are emitted from the ultraviolet irradiation lamp for 1 minute, for example.
[0051]
Here, instead of the ultraviolet treatment or after the ultraviolet treatment, the electron beam treatment by the electron beam treatment unit (EB) belonging to the sixth group G6 or the microwave treatment by the microwave treatment unit (MW) is appropriately performed. Also good.
[0052]
Next, the wafer W that has been treated with ultraviolet rays is transferred to the second main transfer body 23, the transfer / cooling plate (TCP) belonging to the fourth group G4, or the transition unit (TRS), the first main transfer. It is conveyed through the body 22 to the cooling processing unit (CPL) belonging to the fourth group G4. Then, the wafer W is cooled in the cooling processing unit (CPL) (step 7).
[0053]
The wafer W cooled by the cooling processing unit (CPL) is transferred again to the SOD coating processing unit (SCT) via the first main transfer body 22. In the SOD coating processing unit (SCT), the wafer W is subjected to the second SOD coating processing (step 8). At that time, since the surface of the insulating film material already applied on the wafer W has been modified to have a low contact angle by the above-described treatment with ultraviolet rays, the insulating film material can be further applied thereon. There are no irregularities on the surface.
[0054]
The wafer W that has been subjected to the SOD coating processing in the SOD coating processing unit (SCT) is transferred to the aging processing unit (DAC) through the first main transfer body 22 and subjected to the aging processing, and the insulating film material on the wafer W is changed. Gelled (step 9).
[0055]
The wafer W that has been aged by the aging processing unit (DAC) is transferred to the solvent exchange processing unit (DSE) via the first main transfer body 22. In the solvent exchange processing unit (DSE), the wafer W is supplied with an exchange chemical solution, and a process of replacing the solvent in the insulating film coated on the wafer with another solvent is performed (step 10).
[0056]
The wafer W that has been subjected to the replacement process in the solvent exchange processing unit (DSE) is transferred to the first main transfer body 22, the transfer / cooling plate (TCP) belonging to the fourth group G4, or the transition unit (TRS), It is conveyed to the low-temperature heat treatment unit (LHP) via the second main conveyance body 23. In the low-temperature heat processing unit (LHP), the wafer W is subjected to low-temperature heat processing (step 11).
[0057]
The wafer W that has been subjected to the low-temperature heat treatment in the low-temperature heat treatment unit (LHP) is transferred to the multi-functional hot plate cure apparatus (MHC) via the second main transfer body 23, and is subjected to the high-temperature heat treatment at a predetermined low oxygen concentration. , And a temperature adjustment process is performed (step 12).
[0058]
As shown in FIGS. 4 and 5, the second main transfer body 23 enters the room W through the window 181 of the temperature adjustment processing chamber 152 and the transfer temperature adjustment plate 176 is passed through the support pins 158b. Placed on. Then, the gate valve 174 is opened and the wafer W is transported into the heat treatment chamber 151 while the temperature is adjusted, and the wafer W is transferred onto the support pins 158a with the support pins 158a protruding from the surface of the hot plate 156. In this way, the wafer W before heating is transported while adjusting the temperature, thereby contributing to uniform heat history.
[0059]
When the wafer W is transferred to the hot plate, the transfer temperature adjusting plate 176 returns to the original position, and the gate valve 174 is closed to form a sealed space in the heat treatment chamber 151. Then, supply of nitrogen gas into the heat treatment chamber 151 is started by the nitrogen supply mechanism 162, pressure reduction in the chamber is started by the vacuum pump 170, and heat treatment by the hot plate 156 is started.
[0060]
When the heat treatment for a predetermined time is completed, the supply of nitrogen gas into the heat treatment chamber 151 is started again by the nitrogen supply mechanism 162, and the nitrogen gas is ejected until the inside of the heat treatment chamber 151 reaches atmospheric pressure. Then, the support pin 158 rises and protrudes from the surface of the hot plate 156, and the gate valve 174 is opened. At this time, the supply of nitrogen gas into the heat treatment chamber 151 is continued to make the heat treatment chamber 151 positive with respect to the temperature adjustment treatment chamber 152, so that the heat treatment chamber 151 is heated from the temperature adjustment treatment chamber 152. Intrusion of particles into the inside can be prevented.
[0061]
Then, the wafer W is transferred and taken out by the transfer temperature adjustment plate 176, and is transferred into the temperature adjustment processing chamber 152 while being adjusted at a temperature of 23 ° C., for example, and is received by the second main transfer body 23 via the support pins 158b. Passed.
[0062]
Thereafter, the wafer W is transferred to a cooling plate in a delivery / cooling plate (TCP). Then, the wafer W is cooled on the cooling plate in the delivery / cooling plate (TCP) (step 13).
[0063]
The wafer W cooled by the cooling plate in the delivery / cooling plate (TCP) is transferred to the wafer cassette CR through the wafer transfer body 21 in the cassette block 10.
[0064]
As described above, in the SOD system according to the present embodiment, the first and second main transport bodies 22 and 23 are used for the single wafer processing method, the heat treatment system unit, and the cooling treatment system unit. The wafer W is transported between the wafer W and the like, and a plurality of types of heat treatment are performed on the wafer W by the multi-functional hot plate cure apparatus (MHC). It is possible to minimize the transfer of the wafer W between them and shorten the transfer time. Therefore, the processing efficiency of the wafer W can be improved. In addition, the number of heat treatment units can be reduced by employing a multi-functional hot plate cure device (MHC). Thereby, the amount of heat generated in the entire system can be reduced, and as a result, thermal interference between units can be suppressed as much as possible.
[0065]
FIG. 7 shows a modified example of the present invention. In this example, the second processing block in the second processing area is provided on the wall member 201 surrounding the second processing block 12 which is the second processing area. The temperature control part 202 which temperature-controls the inside of 12 is provided. Specifically, the temperature control unit 202 includes, for example, a heater 203 and a cooling pipe 204 embedded in the wall member 201, and the power and cooling supplied to the heater 203 under the control of a control unit (not shown). The temperature and amount of cooling water supplied to the pipe 204 are controlled. By having such a temperature control unit 202, the temperature management in the second processing block 12, which is the second processing region, can be performed more precisely. In addition, in addition to more precise temperature management, the second space is obtained by dividing the upper and lower spaces of the wall member 201 into, for example, three regions R1 to R3 and separately managing the respective regions by the temperature control unit 202. The airflow management in the second processing block 12 which is the processing area can also be performed. For example, an upward air flow is intentionally generated by raising the temperature in the upper region than in the lower region, so that the sublimates generated from the wafer W can be reliably exposed to the outside without adversely affecting the wafer W. It becomes possible to discharge. Therefore, in this case, it is more preferable to introduce nitrogen gas or the like from below and exhaust from the top.
[0066]
The present invention is not limited to the embodiment described above.
[0067]
For example, in the above-described embodiment, the case where the insulating film material is applied twice has been described as an example. However, the coating may be performed once or three times or more.
[0068]
The present invention is naturally applicable to other processing systems that involve solution supply and heat treatment, such as resist coating and development processing in the exposure and development process.
[0069]
Furthermore, in the above embodiment, a silicon wafer has been described as an example of the substrate, but the present invention can also be applied to other substrates such as a glass substrate.
[0070]
【The invention's effect】
As described above, according to the present invention, the substrate transport time can be shortened and the substrate processing efficiency can be improved. Further, thermal interference between units can be suppressed as much as possible.
[Brief description of the drawings]
FIG. 1 is a plan view showing the overall configuration of an SOD system to which a substrate processing apparatus of the present invention is applied.
FIG. 2 is a front view of the SOD system shown in FIG.
FIG. 3 is a rear view of the SOD system shown in FIG. 1;
FIG. 4 is a perspective view of a multi-functional hot plate cure apparatus (MHC) according to the present invention.
5 is a cross-sectional view of the multi-functional hot plate cure apparatus (MHC) shown in FIG.
FIG. 6 is a flowchart showing processing steps of the SOD system according to the present embodiment.
FIG. 7 is a diagram for explaining a modification of the present invention.
[Explanation of symbols]
1 SOD system
11 First processing block (first processing area)
12 Second processing block (second processing area)
51 Insulation wall
52 Inert gas introduction part
DAC aging processing unit
EB electron beam processing unit
LHP low temperature heat treatment unit
MHC multi-functional hot plate cure device
MW Microwave processing unit
SCT SOD coating unit
UV UV treatment unit
W wafer

Claims (4)

A partitioned first processing region and a second processing region;
An application part for applying an insulating film material on the substrate is disposed in the first processing region,
In the second processing region, a heat treatment unit that performs a plurality of types of heat treatment on the substrate on which the insulating film material is applied by the application unit is disposed,
A wall member provided with a temperature control unit for controlling the temperature in the second processing region is disposed so as to surround the second processing region;
A substrate processing apparatus comprising: a transport device that transports a substrate from at least the coating unit to the heat treatment unit. The substrate processing apparatus according to claim 1 ,
The substrate processing apparatus further comprising means for introducing an inert gas into the second processing region and controlling the atmosphere of the second processing region with the inert gas. In the substrate processing apparatus of Claim 1 or Claim 2 ,
The substrate processing apparatus further comprising a heat insulating member disposed between the first processing region and the second processing region. In the substrate processing apparatus of any one of Claims 1-3 ,
The plurality of types of heat treatment in the heat treatment unit include at least heat treatment for baking the substrate and heat treatment for curing the substrate.

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