JP2002151485A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of shortening the carrying time of a substrate, improving the processing efficiency of the substrate, and suppressing thermal interference between units as much as possible. SOLUTION: A wafer W is carried among the unit of an applying processing system, the unit of a heating processing system and the unit of a cooling processing system or the like further by sheets by using first and second main carrying bodies 22 and 23. The plural kinds of heating processings are executed to the wafer W by a multifunctional hot plate curing device (MTC).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a substrate processing apparatus for forming an interlayer insulating film on a semiconductor wafer, for example.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
For example, SOD (Spin on Dielectric)
c) An interlayer insulating film is formed by the system. This S
In the OD system, a coating film is spin-coated on a wafer and subjected to a chemical treatment or a heat treatment to form an interlayer insulating film.

For example, when an interlayer insulating film is formed by a sol-gel method, first, an insulating film material, for example, a colloid of TEOS (tetraethoxysilane) is coated on a semiconductor wafer (hereinafter, referred to as "wafer") with an organic solvent. Is supplied. Next, the wafer supplied with the solution is subjected to a gelling process, and then the solvent is replaced. Then, the wafer in which the solvent has been replaced is heated.

[0004] Such a heat treatment includes a baking treatment for removing a solvent from a solvent on a wafer, a curing treatment for forming a film by a polymerization reaction, and a post-treatment treatment for generating a porous material. It involves a plurality of different heat treatment steps.

[0005] In the conventional SOD system, wafers are carried between the heat treatment apparatuses, for example, in lots by using individual heat treatment apparatuses set at temperatures and pressures corresponding to these heat treatment steps. .

[0006]

However, in such a system configuration, the waiting time of the wafer is long, resulting in poor processing efficiency. Therefore, for example, a so-called wafer transporting a wafer one by one by a transport device by integrating a coating device, a series of heat treatment devices, and the like necessary for the process of the SOD system, and integrating these units. A leaf-type device configuration is conceivable.

However, in such an apparatus configuration,
There are the following problems.

First, since it is necessary to frequently transfer the wafer between the units, there is a problem that the total time required for the transfer becomes long and the processing efficiency is reduced. In addition, such a wafer transfer process often has adverse effects such as temperature control and particle adhesion.

Second, since the processing temperature in the above-described heat processing unit reaches a considerably high temperature of, for example, about 800 ° C. at present, thermal interference between units including the coating unit and the like is large, and There is a problem that the coating treatment or the heating treatment at a different temperature cannot be performed.

Accordingly, a first object of the present invention is to provide a substrate processing apparatus capable of shortening the substrate transport time and improving the substrate processing efficiency.

A second object of the present invention is to provide a substrate processing apparatus capable of minimizing thermal interference between units.

[0012]

SUMMARY OF THE INVENTION In order to solve the above problems, a substrate processing apparatus according to the present invention comprises a coating section for coating an insulating film material on a substrate, and a substrate on which the insulating film material is coated by the coating section. On the other hand, it is characterized by comprising a heat treatment section for performing a plurality of types of heat treatment, and a transfer device for transferring a substrate from at least the coating section to the heat treatment section.

According to the present invention, the substrate is transported from the coating section to the heat processing section by the transport apparatus, while the heating section is provided with a plurality of types of heating for the substrate coated with the insulating film material by the coating section. Since the processing is performed, the transfer of the substrate between the heat treatment units can be suppressed as much as possible, and the transfer time can be reduced as much as possible. Therefore, the processing efficiency of the substrate can be improved. Further, since the number of heat treatment units can be reduced, the amount of heat generated in the entire system can be reduced, and as a result, thermal interference between units can be suppressed as much as possible.

[0014]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 to FIG. 3 show an S according to an embodiment of the present invention.
1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.

In the SOD system 1, a plurality of semiconductor wafers (hereinafter, referred to as "wafers") W as substrates are carried into or out of the system by a wafer cassette CR in units of, for example, 25 wafers, or out of the system. A cassette block 10 for loading / unloading wafers W from / to the CR and various single-wafer processing units for performing predetermined processing on the wafers W one by one in the SOD coating process are arranged at predetermined positions in multiple stages. A first processing block 11 as a first processing area, and a second processing area as a second processing area in which various single-wafer processing units for similarly performing predetermined processing on the wafer W are arranged at predetermined positions. It has a configuration in which the second processing block 12 is integrally connected.

As will be described later, an SOD coating unit (SCT) is disposed in a first processing block 11 as a first processing area, and heating is performed in a second processing block 12 as a second processing area. The processing unit of the processing system is arranged. As described above, the processing units of the heating processing system are intensively arranged in the second processing block 12, and the processing units of the coating processing system are arranged in the first processing block 11, which is a region different from this region. Thus, the processing unit of the heat treatment system is less likely to adversely affect the processing unit of the coating treatment system.

Further, between the first processing block 11 as the first processing area and the second processing block 12 as the second processing area, a heat insulating wall 51 as a heat insulating member made of, for example, a vacuum layer is provided. Is provided. As described above, in addition to arranging the processing unit of the heat treatment system and the processing unit of the coating treatment system in separate areas, respectively, and arranging such a heat insulating wall 51 between these areas. Thus, the thermal processing system processing unit is less likely to adversely affect the coating processing system processing unit.

Further, an inert gas such as nitrogen gas is introduced into the second processing block 12, which is a second processing area, above the second processing block 12, thereby forming a second processing area. An inert gas introduction unit 52 for controlling the atmosphere in the second processing block 12 with the inert gas is provided, and a second processing area, a second processing area, is provided below the second processing block 12. An exhaust unit 53 that exhausts the inside of the block 12 is provided. As described above, by controlling the atmosphere in the second processing block 12, which is the second processing region, by the inert gas, it is possible to prevent oxidation during the heat treatment and transfer of the wafer W described later. In particular, since the units of the heat treatment system are intensively arranged in the second processing block 12, such atmosphere control can be performed efficiently.

In the cassette block 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, up to four wafer cassettes are arranged at the positions of the projections 20 a on the cassette mounting table 20 so that the respective wafer entrances and exits are located on the first processing block 11 side. A wafer carrier 21 mounted in a row in the X direction and movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z vertical direction) of the wafers stored in the wafer cassette CR is mounted on each wafer cassette CR. It is selectively accessed. Further, the wafer transfer body 21 is configured to be rotatable in the θ direction, and as described later, a transfer / cooling plate (TCP) belonging to the multi-stage unit section of the fourth set G4 on the first processing block 11 side. Is also accessible.

In the first processing block 11, as shown in FIG. 1, a first main transport body 22 of a vertical transport type is provided at the center, and all the processing units are surrounded by one or more sets. Are arranged in multiple stages. In this example, 5
This is a multi-stage arrangement of sets G1, G2, G3, G4, G5. The multi-stage units of the first and second sets G1, G2 are arranged side by side on the front side of the system (in FIG. 1), and the fourth set G4
Are arranged adjacent to the cassette block 10, and the multistage units of the third set G3 are arranged adjacent to the second processing block 12.

As shown in FIG. 2, in the first set G1 and the second set G2, the wafer W is placed on the spin chuck in the cup CP, the insulating film material is supplied, and the wafer is rotated. A SOD coating processing unit (SCT) for coating a uniform insulating film thereon, and a wafer W in a cup CP
Exchange processing unit (DS) that supplies a chemical solution for exchange such as HMDS and heptane on a spin chuck and replaces the solvent in the insulating film applied on the wafer with another solvent before the drying process
E) are stacked in two stages from the bottom.

In the second set G2, an SOD coating processing unit (SCT) is arranged in the upper stage. Note that an SOD coating processing unit (SCT), a solvent exchange processing unit (DSE), and the like can be disposed below the second set G2 as needed.

In the SOD coating processing unit (SCT) and the solvent exchange processing unit (DSE), a solvent is applied onto the wafer W by a spin coating method. However, for example, a solvent such as an insulating film material or a chemical for exchange is discharged. It is a matter of course that a so-called scan coating method in which a solvent is applied over the entire surface of the wafer W by scanning the nozzle W on the wafer W in the XY directions, for example, may be used. By using such a scan coating method, it is possible to minimize waste of the solvent.

As shown in FIG. 3, in the third set G3, a delivery / cooling plate (TCP), two cooling processing units (CPL), and a transition unit (TR)
S) are arranged in multiple stages in order from the bottom.

In the fourth set G4, a delivery / cooling plate (TCP) and three cooling processing units (CPL)
, A transition unit (TRS), and a cooling processing unit (CPL) in multiple stages.

The transfer / cooling plate (TCP) has a two-stage structure having a cooling plate for cooling the wafer W in a lower stage, and a transfer table in an upper stage, and transfers the wafer W between the cassette block 10 and the first processing block 11. Perform delivery. Similarly, the transition unit (TRS) transfers the wafer W between the cassette block 10 and the first processing block 11. The cooling processing unit (CPL)
For cooling the wafer W.

Further, in the SOD system 1, as described above, the multi-stage unit of the fifth processing unit group G5 shown by the broken line can be arranged also on the back side of the first main carrier. The multi-stage units of the fifth processing unit group G5 are configured so that they can be shifted laterally along the guide rails 25 as viewed from the first main transport body 22. Therefore, even when the multi-stage unit of the fifth processing unit group G5 is provided as shown in the drawing, the space is secured by sliding along the guide rail 25, so that the first main transport body 22 On the other hand, maintenance work can be easily performed from behind. Note that the multi-stage unit of the fifth processing unit group G5 has the guide rail 25
The first main transfer is not limited to the linear slide shift along the arrow, but may be configured such that the shift is performed to the outside of the system, as shown by the reciprocating rotation arrow indicated by the alternate long and short dash line in FIG. It is easy to secure space for maintenance work on the body.

In the second processing block 12, as described above, the sixth set G6 to which the unit for performing the heating process on the wafer W belongs is disposed on the front side of the system, and the unit for performing the heating process on the wafer W similarly. Is disposed on the back side of the system. Between the sixth set G6 and the seventh set G7, a second main transfer body that accesses the fourth set G4, the sixth set G6, and the seventh set G7 and transfers the wafer W. The second main carrier 23 has the same vertical transport type configuration as the first main carrier 22.

The SOD system 1 is disposed, for example, in a clean room, and has, for example, a first main transport mechanism 22.
The upper part is set to an atmosphere of a higher pressure than the clean room set to the atmospheric pressure, whereby particles generated from the first main carrier 22 are discharged to the outside of the SOD system 1, while the inside of the clean room is Particles are prevented from entering the SOD system 1.

As shown in FIG. 2 and FIG. 3, in the sixth set G6, a multi-functional hot plate curing apparatus (MHC) has two stages, and the film is irradiated with microwaves or electron beams to form a film, for example, at 300 ° C. to 500 ° C. Microwave processing unit (MW) for heating and reforming at about ℃, for example, 300 ℃ ~ 5
An electron beam processing unit (E
B) are provided in one stage and in order from the bottom. On the other hand, in the seventh group G7, an aging processing unit (DAC)
And two low-temperature heat treatment units (LHP) for performing heat treatment at a low temperature of, for example, about 80 ° C. to 250 ° C., and an ultraviolet treatment unit for irradiating ultraviolet rays to heat and modify the film at, for example, a normal temperature to about 100 ° C. (UV) are provided in order from the bottom. The aging processing unit (DAC) introduces NH ₃ + H ₂ O into a process chamber capable of being sealed at a temperature of, for example, about 15 ° C. to 80 ° C. to perform aging processing on the wafer W, and wets the insulating film material film on the wafer W. Gel.

FIGS. 4 and 5 are a perspective view and a sectional view of the multifunctional hot plate curing apparatus (MHC).

This multi-functional hot plate curing apparatus (MHC) has a heating processing chamber 151 and a temperature control processing chamber 152 provided adjacent thereto. The heating processing chamber 151 is formed to be hermetically closed by a gate valve 174 mechanism that can be opened and closed to transfer the wafer W to and from the temperature control processing chamber 152.

A heating plate 156 for heating the wafer W is disposed substantially at the center of the heating processing chamber 151. Inside the hot plate 156, for example, a heater (not shown)
Is embedded, and the set temperature can be set to 80 to 250 ° C., for example. Further, a plurality of, for example, three holes 157 penetrate vertically through the hot plate 156, and support pins 158a for supporting the wafer W are inserted in these holes 157 so as to be able to move up and down. . These support pins 158a are connected to the communication members 15 on the back surface of the hot plate 156.
9, the communication member 159 is lifted and lowered by a lifting cylinder 160 disposed below the communication member 159. Then, the support pins 158 a protrude or sink from the surface of the hot plate 156 by the elevating operation of the elevating cylinder 160.

A plurality of proximity pins 161 are arranged on the surface of the heating plate 156 so that the wafer W does not directly contact the heating plate 156 when the wafer W is subjected to heat treatment. This prevents the wafer W from being charged with static electricity during the heating process.

Further, the heat treatment chamber 151 is provided with a nitrogen supply mechanism 162 for supplying an inert gas, for example, nitrogen gas, into the heat treatment chamber 151, and is provided with a nitrogen supply port 182 formed at the upper part. Nitrogen is supplied into the room by a command from the control unit 167. On the other hand, an oxygen supply mechanism 180 for supplying a reactive gas, for example, oxygen, is provided in the heat treatment chamber 151, and oxygen is supplied into the room from an oxygen supply port 183 formed in the upper part by a command of the control unit 167. Supply. This oxygen supply control is performed based on the measurement result of the oxygen sensor 172a that measures the oxygen concentration provided in the heat treatment chamber 151.

On the other hand, an evacuation port 168 for reducing pressure is provided below the heat treatment chamber 151, and this evacuation port 168 is connected to, for example, a vacuum pump 170.
, The inside of the heat treatment chamber 151 can be set to a pressure lower than the atmospheric pressure, for example, about 0.1 torr.

Further, a temperature sensor 172b for measuring the indoor temperature is attached to the heat treatment chamber 151. The measurement result by the temperature sensor 172b is
The control unit 167 adjusts the heating temperature of the hot plate 156 based on the measurement result.

The temperature control processing chamber 152 has a second main carrier 23
A window 181 for loading / unloading the wafer W is provided between the window 181 and the window 181. The window 181 can be opened and closed by a shutter 164.

In the temperature control processing chamber 152, the wafer W
A transfer temperature adjusting plate 176 for adjusting the temperature of the wafer W by mounting the moving mechanism 17 along the guide plate 177a
7b is configured to be movable in the horizontal direction. The set temperature of the transfer temperature control plate 176 is, for example, 15 to 250 ° C., and the applicable temperature range of the wafer W to be temperature controlled is, for example, 20 ° C.
0-800 ° C. The transfer temperature control plate 176 can enter the heat treatment chamber 151 via the gate valve 174, and receives the wafer W heated by the hot plate 156 in the heat treatment chamber 151 via the support pins 158a. The wafer W is carried into the temperature control processing chamber 152 to control the temperature of the wafer W.

Below the transfer temperature control plate 176, a support pin 158b having the same configuration as the support pin 158a in the heat treatment chamber 151 is provided so as to be able to move up and down. These support pins 158b are connected to and integrated with the support member 159 on the back surface of the transfer temperature control plate 176,
9 is lifted and lowered by a lifting cylinder 160 disposed below.

As shown in FIGS. 2 and 3, the vacuum pump 170 and the gas cylinders of the gas supply mechanisms 162 and 180 are provided in a chemical chamber 30 disposed below a multi-functional hot plate curing device (MHC). It is located inside.

Next, the processing steps of the SOD system 1 configured as described above will be described with reference to the flow shown in FIG.

First, in the cassette block 10, the wafer W before processing is transferred from the wafer cassette CR to the wafer carrier 2.
1 and transferred to a transfer table in a transfer / cooling plate (TCP) belonging to the third set G3 on the processing block 11 side or to a transition unit (TRS).

The wafer W transferred to the transfer table in the transfer / cooling plate (TCP) is transferred to the first main transfer member 2
2 to a cooling processing unit (CPL).
Then, in the cooling processing unit (CPL), the wafer W
Is cooled to a temperature suitable for processing in the SOD coating processing unit (SCT) (step 1).

The wafer W cooled by the cooling unit (CPL) is transferred to the SOD coating unit (SCT) via the first main transfer body 22. Then, in the SOD coating processing unit (SCT), the wafer W
A coating process is performed (Step 2).

In the SOD coating processing unit (SCT), the SO
The wafer W on which the D coating process has been performed is the first main carrier 22,
Delivery / cooling plate (TCP) belonging to the fourth set G4
At the delivery table or transition unit (T
RS), transferred to the aging processing unit (DAC) via the second main transfer body 23, subjected to aging processing, and the insulating film material on the wafer W is gelled (step 3).

The wafer W subjected to aging processing by the aging processing unit (DAC) is transferred to the second main carrier 23,
Of the transfer / cooling plate (TCP) belonging to the set G4, or the transition unit (TR)
S), is transported to the solvent exchange processing unit (DSE) via the first main transport body 22. Then, in the solvent exchange processing unit (DSE), an exchange chemical is supplied to the wafer W, and a process of replacing the solvent in the insulating film applied on the wafer with another solvent is performed (step 4).

The wafer W having undergone the replacement processing in the solvent exchange processing unit (DSE) is provided on the first main transfer body 22, the transfer table in the transfer / cooling plate (TCP) belonging to the fourth set G4, or the transition unit ( TRS) and transported to the low-temperature heating unit (LHP) via the second main transport body 23. Then, in the low-temperature heating unit (LHP), the wafer W is subjected to low-temperature heating (step 5).

The wafer W which has been subjected to the low-temperature heat treatment in the low-temperature heat treatment unit (LHP) is transferred to the ultraviolet treatment unit (UV) via the second main transfer member 23. Then, in the ultraviolet processing unit (UV), the wafer W is 172n.
A process using ultraviolet light having a wavelength of about m is performed (step 6). In the process using ultraviolet rays, a nitrogen gas is blown out, and the inside of an ultraviolet ray processing unit (UV) is set to a nitrogen gas atmosphere. In this state, ultraviolet rays are emitted from an ultraviolet irradiation lamp for one minute, for example.

The electron beam processing by the electron beam processing unit (EB) belonging to the sixth set G6 and the microwave processing by the microwave processing unit (MW) are performed instead of or after the ultraviolet light treatment as appropriate. You may do so.

Next, the wafer W that has been
Is the delivery / transfer belonging to the second main carrier 23 and the fourth group G4.
A transfer table in the cooling plate (TCP) or a transition unit (TRS), a cooling processing unit (CPL) belonging to the fourth set G4 via the first main carrier 22
Transported to Then, the wafer W is cooled in the cooling processing unit (CPL) (Step 7).

The wafer W cooled by the cooling processing unit (CPL) is returned to the SOD through the first main carrier 22 again.
It is transported to a coating processing unit (SCT). And SO
In the D coating processing unit (SCT), the wafer W
A second SOD coating process is performed (step 8). At this time, since the surface of the insulating film material already applied on the wafer W has been modified so as to have a low contact angle by the above-described treatment with ultraviolet light, even if the insulating film material is further applied thereon, No irregularities occur on the surface.

In the SOD coating processing unit (SCT), SO
The wafer W on which the D coating process has been performed is transported to the aging processing unit (DAC) via the first main transport body 22,
The aging process is performed, and the insulating film material on the wafer W is gelled (Step 9).

The wafer W that has been aged by the aging processing unit (DAC) is transferred to the solvent exchange processing unit (DSE) via the first main transfer body 22. Then, in the solvent exchange processing unit (DSE), an exchange chemical is supplied to the wafer W, and a process of replacing the solvent in the insulating film applied on the wafer with another solvent is performed (step 1).
0).

The wafer W having undergone the replacement processing in the solvent exchange processing unit (DSE) is provided on the first main carrier 22, the transfer table in the transfer / cooling plate (TCP) belonging to the fourth set G4, or the transition unit ( TRS) and transported to the low-temperature heating unit (LHP) via the second main transport body 23. Then, the wafer W is subjected to a low-temperature heating process in the low-temperature heating unit (LHP) (step 11).

The wafer W which has been subjected to the low-temperature heat treatment in the low-temperature heat treatment unit (LHP) is passed through the second main carrier 23 to a multi-functional hot plate curing apparatus (MH).
C) and transferred to a high-temperature heat treatment at a predetermined low oxygen concentration,
Then, a temperature control process is performed (step 12).

As shown in FIGS. 4 and 5, the second main carrier 23 enters the wafer W through the window 181 of the temperature control processing chamber 152 and transfers the wafer W through the support pins 158b. It is placed on the adjustment plate 176. And the gate valve 17
4 is opened, the wafer W is transferred into the heat treatment chamber 151 while the temperature is adjusted, and the wafer W is transferred to the support pins 158a with the support pins 158a protruding from the surface of the hot plate 156. In this way, by transporting the wafer W before heating while controlling the temperature, it contributes to uniform heat history.

When the wafer W is transferred to the hot plate, the transfer temperature control plate 176 returns to its original position, and a closed space is formed in the heat treatment chamber 151 by closing the gate valve 174. Then, the supply of nitrogen gas into the heat treatment chamber 151 is started by the nitrogen supply mechanism 162, the pressure inside the room is started by the vacuum pump 170, and the hot plate 156
Is started.

When the heat treatment for a predetermined time is completed, supply of nitrogen gas into the heat treatment chamber 151 is started again by the nitrogen supply mechanism 162, and nitrogen gas is ejected until the inside of the heat treatment chamber 151 becomes atmospheric pressure. . Then, the support pin 158 rises and protrudes from the surface of the hot plate 156, and the gate valve 1
74 opens. At this time, the supply of the nitrogen gas into the heat treatment chamber 151 is continued, so that the heat treatment chamber 151 is made to have a positive pressure with respect to the temperature control processing chamber 152, so that the heat treatment chamber 152 Particles can be prevented from entering the inside.

Then, the wafer W is transferred and taken out by the transfer temperature control plate 176, is transferred into the temperature control processing chamber 152 while controlling the temperature at, for example, 23 ° C., and is transferred to the second main transfer member via the support pins 158b. 23.

Thereafter, the wafer W is transferred to a cooling plate in a delivery / cooling plate (TCP). And in the cooling plate in the delivery and cooling plate (TCP),
The wafer W is subjected to a cooling process (step 13).

The wafer W cooled by the cooling plate in the transfer / cooling plate (TCP) is transferred to the wafer cassette CR via the wafer transfer body 21 in the cassette block 10.

As described above, in the SOD system according to the present embodiment, the unit of the coating processing system, the unit of the heating processing system, and further the cooling processing are performed by using the first and second main transport bodies 22 and 23 in a single-wafer manner. While the wafer W is transported to and from a system unit or the like, the wafer W is transported by a multi-functional hot plate curing apparatus (MHC).
, The transfer of the wafer W between the heat treatment systems can be suppressed as much as possible, and the transfer time can be shortened as much as possible. Therefore, the processing efficiency of the wafer W can be improved. In addition, the number of heat treatment units can be reduced by employing a multifunctional hot plate curing device (MHC). As a result, the amount of heat generated in the entire system can be reduced, and as a result, thermal interference between units can be suppressed as much as possible.

FIG. 7 shows a modification of the present invention. In this example, a wall member 201 surrounding a second processing block 12 which is a second processing area has a second processing area in the second processing area. Is provided with a temperature control unit 202 for controlling the temperature inside the processing block 12. Specifically, the temperature control unit 202 includes, for example, a heater 203 and a cooling pipe 204 embedded in the wall member 201, and controls the power and cooling supplied to the heater 203 under the control of a control unit (not shown). The temperature and amount of the cooling water supplied to the pipe 204 are controlled.
By having such a temperature control unit 202, the temperature management in the second processing block 12, which is the second processing area, can be performed more precisely. The upper and lower portions of the wall member 201 are divided into, for example, three regions R <b> 1 to R <b> 3, and the respective regions are separately managed by the temperature control unit 202. The airflow management in the second processing block 12, which is the processing area of, can also be performed. For example, an upward airflow is intentionally generated by increasing the temperature in the upper region compared to the lower region, whereby sublimates and the like generated from the wafer W can be reliably discharged to the outside without adversely affecting the wafer W. It can be discharged. Therefore, in this case, it is more preferable to introduce nitrogen gas or the like from below and exhaust gas from above.

The present invention is not limited to the embodiment described above.

For example, in the above embodiment, the case where the insulating film material is applied twice has been described as an example.
Of course, it does not matter even if it is more than the first coat.

Further, the present invention can be naturally applied to other processing systems that involve solution supply and heat treatment, such as resist coating and development processing in the exposure and development steps.

Further, in the above embodiment, the silicon wafer is taken as an example of the substrate, but the present invention can be applied to other substrates such as a glass substrate.

[0070]

As described above, according to the present invention,
The substrate transfer time can be reduced, and the processing efficiency of the substrate can be improved. Further, thermal interference between the units can be suppressed as much as possible.

[Brief description of the drawings]

FIG. 1 is a plan view showing an overall configuration of an SOD system to which a substrate processing apparatus according to the present invention is applied.

FIG. 2 is a front view of the SOD system shown in FIG.

FIG. 3 is a rear view of the SOD system shown in FIG. 1;

FIG. 4 is a perspective view of a multi-functional hot plate curing device (MHC) according to the present invention.

5 is a cross-sectional view of the multi-functional hot plate curing device (MHC) shown in FIG.

FIG. 6 is a flowchart showing processing steps of the SOD system according to the present embodiment.

FIG. 7 is a diagram for explaining a modified example of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 SOD system 11 1st processing block (1st processing area) 12 2nd processing block (2nd processing area) 51 Heat insulation wall 52 Inert gas introduction part DAC Aging processing unit EB Electron beam processing unit LHP Low temperature heating Processing unit MHC Multi-functional hot plate curing device MW Microwave processing unit SCT SOD coating processing unit UV Ultraviolet processing unit W Wafer

Continued on the front page (72) Hibiki Otani 2655 Tsukure, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Tokyo Electron Kyushu Co., Ltd. Kumamoto Office F-term (reference) 5F045 AB32 BB08 CB05 EM09 EM10 EN04 EN05 HA16 HA25

Claims (6)

[Claims] A coating unit configured to apply an insulating film material on a substrate; a heating unit configured to perform a plurality of types of heating processes on the substrate coated with the insulating film material by the coating unit; A substrate processing apparatus comprising: a transfer device configured to transfer a substrate to the heat processing unit. 2. The substrate processing apparatus according to claim 1, further comprising: a first processing area and a second processing area, wherein the coating unit is disposed in the first processing area; A substrate processing apparatus, wherein the heat treatment unit is disposed in a second processing area. 3. The substrate processing apparatus according to claim 2, further comprising: a means for introducing an inert gas into the second processing area to control an atmosphere in the second processing area by the inert gas. A substrate processing apparatus. 4. The substrate processing apparatus according to claim 2, further comprising a heat insulating member disposed between the first processing area and the second processing area. Substrate processing equipment. 5. One of claims 2 to 4
The substrate processing apparatus according to any one of the preceding claims, further comprising a wall member provided so as to surround the second processing region, and provided with a temperature control unit for controlling the temperature in the second processing region. Substrate processing apparatus. 6. One of claims 1 to 5
The substrate processing apparatus according to claim 1, wherein the plurality of types of heat treatment in the heat treatment unit include at least a heat treatment for baking the substrate and a heat treatment for curing the substrate. apparatus.