JP3333748B2 - Coating film forming apparatus, curing apparatus and curing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coating film forming apparatus for applying a coating liquid on a substrate to form an insulating film in a semiconductor device manufacturing process and the like, and a curing processing apparatus for performing a coating film curing treatment. About.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
For example, an interlayer insulating film is formed by a SOD (Spin on Dielectric) system. In this SOD system,
The interlayer insulating film is formed by spin-coating a coating film on a semiconductor wafer by a sol-gel method, a silk method, a speed film method, a Fox method, or the like. Annealing treatment is applied to the wafer on which the coating film is spin-coated to cure the coating film (cure)
Need to be done.

In such an annealing process, conventionally, a plurality of wafers on which a coating film is spin-coated are carried into a heating furnace for each lot, heated at a high temperature for a predetermined time, and then carried out for each lot. It is carried out by being conveyed to a cooling unit via a conveyance path and cooled to a predetermined temperature, and the interlayer insulating film is hardened by such processing.

[0004]

However, the above-described annealing using a heating furnace is a batch processing in which a plurality of wafers are heated in a high-temperature heating furnace for each lot, so that precise temperature control is performed for each wafer. Cannot be performed.

Although the heat treatment is performed in an inert gas atmosphere, it is difficult to strictly control the concentration of the inert gas when transferring the semiconductor wafer to the cooling unit after the completion of the heat treatment. Is difficult, the oxidation of the interlayer insulating film may occur.

The present invention has been made in view of the above circumstances, and it is possible to control each substrate when performing a curing process on the substrate on which the coating film is formed, and to prevent oxidation of the coating film. It is an object of the present invention to provide a coating film forming apparatus and a curing processing apparatus which can perform the above-mentioned steps.

[0007]

According to a first aspect of the present invention, there is provided a coating film forming apparatus for forming a coating film on a substrate by applying a coating liquid to the substrate. A coating processing unit for applying a coating liquid to the substrate, and a curing processing unit for applying heat treatment and cooling processing to the substrate to cure the coating film, wherein the curing processing unit is coated with the coating liquid. A heat treatment chamber having a hot plate that heats the substrates one by one to a predetermined temperature,
When the hot plate is heating the substrate,
A ring shutter surrounding the periphery, said communicates with the heat treatment chamber, and the cooling processing chamber for cooling the heat treated substrate, and the inert gas supply means for supplying an inert gas into the cooling processing chamber and the heat treatment chamber, There is provided an application film forming apparatus, comprising: an exhaust unit that exhausts the heat treatment chamber and the cooling treatment chamber.

According to a second aspect of the present invention, there is provided a curing apparatus for subjecting a substrate on which a coating film is formed to a heating process and a cooling process to cure the coating film. heat treatment at a predetermined temperature one by one substrate that is
A heat treatment chamber having a hot plate ;
Surrounds the perimeter of the substrate when the heat is heating the substrate
And the ring shutter, said communicates with the heat treatment chamber, and the cooling processing chamber for cooling the heat treated substrate, and the inert gas supply means for supplying an inert gas into the cooling processing chamber and heating chamber, heating chamber and A hardening treatment apparatus comprising: an exhaust unit that exhausts the cooling treatment chamber.

Further, according to a third aspect of the present invention, a coating
Heat treatment and cooling treatment for the substrate on which the cloth film is formed
Is a curing treatment device that cures the coating film by applying
Heat the substrates coated with the cloth solution one by one to a predetermined temperature.
Heat treatment chamber having a hot plate
Cooling process that cools the substrate that has been heated and communicated with the chamber
Chamber, and can be moved between the heating processing chamber and the cooling processing chamber.
Provided by the hot plate and heated by the hot plate.
The cooled substrate is placed in the cooling processing chamber while the substrate is placed and cooled.
Cooling plate to be transported to the
An inert gas supply means for supplying an inert gas to the science room;
Exhaust means for exhausting the heat treatment chamber and the cooling treatment chamber
A curing treatment device is provided.

Further, according to a fourth aspect of the present invention, a coating
Heat and cool the substrate with the cloth film
Curing method for curing a coating film by heating
In the room, place the substrate on the hot plate
Heating the cooling plate and heating the cooling plate
Enter the chamber and place the substrate on the cooling plate,
While cooling the substrate on the cooling plate,
Place the placed cooling plate in the heat treatment chamber.
From the heat treatment chamber to the cooling treatment chamber,
Transporting the substrate into the cooling processing chamber;
Continuing the cooling of the substrate in the laboratory.
Supply inert gas to the processing room and the cooling processing room,
Characterized by performing the above steps continuously in a neutral atmosphere
A method for chemical treatment is provided.

As described above, according to the present invention, the curing unit for curing the coating film in the coating film forming apparatus includes:
A heat treatment chamber for heating the substrate and a cooling treatment chamber for cooling the heated substrate are provided in communication with each other, and a means for supplying an inert gas to the heat treatment chamber and the cooling treatment chamber, and for exhausting the gas. Since the means is provided, heat treatment and cooling treatment can be continuously performed in an inert atmosphere having a low oxygen concentration, and oxidation of the coating film can be sufficiently prevented. In addition, since the single-wafer processing is performed in which the wafers are heated one by one in the heat treatment chamber, precise temperature control can be performed for each wafer, and excellent in-plane uniformity of the heat treatment can be maintained. Further, since the single-wafer processing is used, the management can be performed for each wafer instead of the conventional management for each lot, so that the yield can be improved. In the first and second aspects, the heat treatment is
Using a ring shutter
The heating temperature, so that the in-plane uniformity of the heating temperature can be significantly improved.
Can be.

In this case, by providing a shutter for shutting off between the heat treatment chamber and the cooling treatment chamber in the curing treatment unit, it is possible to prevent thermal interference therebetween.

The inert gas supply means has a structure having an inert gas supply section in each of the heat treatment chamber and the cooling processing chamber, and the exhaust means has a structure having an exhaust section in each of the heat treatment chamber and the cooling processing chamber. By doing so, even when the substrate is being loaded / unloaded on one side, processing in a low oxygen concentration atmosphere can be performed on the other.

Further, the heat treatment chamber has a structure having a plurality of pins for raising and lowering the substrate, and a hot plate for heating the substrate to a predetermined temperature when the substrate mounted on the plurality of pins is descending. By doing so, the in-plane uniformity of the substrate temperature during the heat treatment can be further enhanced.

Further, the cooling processing chamber receives the substrate that has been heated and placed on the plurality of pins, is carried into the cooling processing chamber, cooled to a predetermined temperature, and after cooling, the substrate is cooled. By adopting a structure having a cooling plate to be placed back on the pins, rapid cooling of the substrate can be performed smoothly.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a coating film forming apparatus (SOD system) according to an embodiment of the present invention and a DCC (Dieelectric Oxyg) used therein will be described with reference to the accompanying drawings.
An en Density Controlled Cure and Cooling-off) processing device will be described.

FIG. 1A is a top plan view of an SOD system according to an embodiment of the present invention, and FIG.
FIG. 2 is a plan view of the lower part of the SOD system, FIG. 2 is a side view of the SOD system shown in FIG. 1, and FIG. 3 is a diagram showing two unit laminates mounted in the SOD system shown in FIG. FIG.

The SOD system generally includes a processing unit 1, a side cabinet 2, and a carrier station (CSB) 3.

As shown in FIGS. 1A and 2, the processing section 1 includes a solvent exchange unit (DSE) 11 provided at an upper stage on the front side thereof and a coating unit (SCT) for high viscosity. 1) and FIG.
(B) and as shown in FIG. 2, a low-viscosity coating processing unit (SCT) 13 provided in the lower stage on the front side thereof
And a chemical chamber 14 containing a chemical or the like.

At the center of the processing section 1, as shown in FIGS. 1A and 1B, processing unit groups 16 and 17 each having a plurality of processing units stacked in multiple stages are provided. In between, a transfer mechanism 18 for transferring the wafer W up and down is provided. The processing unit group 16 on the left side
As shown in FIG. 3, a low-temperature hot plate (LHP) 19, two DCC processing units 20, and two aging units (DAC) 21 are stacked in this order from the upper side. . The processing unit group 17 on the right side includes two hot plates (OHP) 22 for high temperature and a hot plate (L
HP) 23 and two cooling plates (CPL) 2
4, a transfer unit (TRS) 25, and a cooling plate (CPL) 26 are stacked. In addition, the transfer part (TRS) 25 can also have the function of a cooling plate.

The side cabinet 2 has a bubbler 27 for supplying a chemical solution and a trap (TRAP) 28 for cleaning exhaust gas at the upper stage, and a power supply source 29 at the lower stage. , A chemical solution chamber 30 for storing a chemical solution such as HMDS or ammonia, and a drain 31 for discharging waste liquid.

In the SOD system configured as described above, for example, when an interlayer insulating film is formed by a sol-gel method, the wafer W transferred from the carrier station (CSB) 3 to the transfer unit (TRS) 25 The cooling plate (CPL) 24,
26, the temperature of which is controlled there, and then transported to the coating processing units (SCT) 12, 13, where the TEO
A coating liquid in which a colloid of S is dispersed in an organic solvent such as an ethanol solution is applied to the wafer W. Then, the wafer W
Is transported to the aging unit (DAC) 21,
It is gelled and then transported to Solvent Exchange (DSE) 11, where the solvent is replaced.
Thereafter, the wafer W is placed on a hot plate for low temperature (LH).
P) 19, 23, hot plate for high temperature (OHP) 2
2 and is returned to the carrier station (CSB) 3 by the transport mechanism (TCP) 25. In this case, the curing process in the DCC processing unit 20 is unnecessary.

In the above-described SOD system, for example, when an interlayer insulating film is formed by a silk method, a speed film method, or a fox method, the wafer W transferred from the carrier station (CSB) 3 to the transfer unit (TRS) 25 Is transported to the cooling plates (CPL) 24 and 26 by the transport mechanism 18 and cooled, and then transported to the low-viscosity coating processing unit (SCT) 13 where the coating liquid is applied to the wafer W. Thereafter, the wafer W is placed on a low-temperature hot plate (LHP) 19,2.
Heat treatment at 3 and cooling plate (CPL) 2
The wafer W is transported to the wafers 4 and 26 and cooled, and then transported to the high-viscosity coating unit (SCT) 12 where the coating liquid is applied to the wafer W. Thereafter, the wafer W is subjected to a heat treatment by using a low-temperature hot plate (LHP) 19, 23,
The heat treatment is performed by a hot plate (OHP) 22 for high temperature, the heat treatment is carried into the DCC processing unit 20, where the heat treatment and the cooling treatment are performed in a low oxygen concentration atmosphere, and the applied interlayer insulating film is cured. After that, the wafer W
It is returned to the carrier station (CSB) 3 via the transfer unit (TRS) 25.

Next, the DCC processing unit 20 according to the present embodiment will be described with reference to FIGS. FIG. 4 is a schematic plan view of the DCC processing unit according to the present embodiment, FIG. 5 is a schematic cross-sectional view of the DCC processing unit shown in FIG. 4, and FIG. It is a flowchart of FIG.

As shown in FIGS. 4 and 5, the DCC processing unit 20 has a heating processing chamber 41 and a cooling processing chamber 42 provided adjacent thereto. And a hot plate 43 whose set temperature can be set to 200 to 470 ° C. Also, this DC
The C processing unit 20 further includes a main transport mechanism 18
(FIGS. 1 and 3) A first gate shutter 44 that is opened and closed when a wafer W is transferred to and from, and a second gate that opens and closes between the heating processing chamber 41 and the cooling processing chamber 42. It has a shutter 45 and a ring shutter 46 that moves up and down together with the second gate shutter 45 while surrounding the wafer W around the hot plate 43.
Further, the hot plate 43 is provided with three lift pins 47 for placing the wafer W thereon and moving it up and down. Note that a shielding plate screen may be provided between the hot plate 43 and the ring shutter 46.

Below the heat treatment chamber 41, an elevating mechanism 48 for elevating the three lift pins 47, an elevating mechanism 49 for elevating the ring shutter 46 together with the second gate shutter 45, and a first elevating mechanism 49 And a lifting mechanism 50 for lifting and lowering the gate shutter 44 to open and close it.

The heat treatment chamber 41 is configured such that an inert gas such as N ₂ is supplied thereto from a supply source (not shown), and the inside thereof is exhausted through an exhaust pipe 51. It is configured as follows. By evacuating while supplying the inert gas in this way, the inside of the heat treatment chamber 41 is maintained at a low oxygen concentration (for example, 50 ppm or less) atmosphere.

The heating processing chamber 41 and the cooling processing chamber 42 communicate with each other through a communication port 52. A cooling plate 53 for mounting and cooling the wafer W is moved along a guide plate 54 by a moving mechanism. 55 makes it possible to move in the horizontal direction. Thereby, the cooling plate 53 can enter the heating processing chamber 41 through the communication port 52, and receives the wafer W heated by the hot plate 43 in the heating processing chamber 41 from the lift pins 47 to cool the cooling plate 53. After the wafer W is carried into the processing chamber 42 and cooled, the wafer W is returned to the lift pins 47.

The set temperature of the cooling plate 53 is, for example, 15 to 25 ° C., and the applicable temperature range of the wafer W to be cooled is, for example, 200 to 470 ° C.

Further, the cooling processing chamber 42 is configured such that an inert gas such as N ₂ is supplied into the cooling processing chamber 42 through a supply pipe 56, and the inside thereof is exhausted to the outside through an exhaust pipe 57. It is configured to be. Thus, similarly to the heating processing chamber 41, the inside of the cooling processing chamber 42 is maintained at a low oxygen concentration (for example, 50 ppm or less) atmosphere.

In the DCC processing unit 20 configured as described above, the heating process and the cooling process are performed as follows in accordance with the procedure shown in FIG.

First, the first gate shutter 44 is opened, and the wafer W is loaded from the main transfer mechanism 18 (FIGS. 1 and 3) onto the three lift pins 47 in the heat treatment chamber 41 (step 1). ). At this time, simultaneous replacement of the wafers W is not performed.

Next, the first gate shutter 44 is closed, the ring shutter 46 and the second gate shutter 45 are raised, and the wafer W is moved to the ring shutter 4.
6 (step 2). At this time, the supply of the inert gas such as N ₂ into the heat treatment chamber 41 is started (step 3), and the inert gas is charged into the heat treatment chamber 41, so that the inside of the heat treatment chamber 41 has low oxygen. Concentration (eg 5
(0 ppm or less) is maintained in the atmosphere.

After that, the lift pins 47 are lowered, the wafer W is brought close to the hot plate 43, and is heated in a low oxygen concentration (for example, 50 ppm or less) atmosphere (step 4). The heating temperature is, for example, 200 to
470 ° C. At this time, heating in the heat treatment chamber 41 is not heating by a heating furnace, but a hot plate 43.
, And the hot plate 43 is surrounded by the ring shutter 46, so that the in-plane uniformity is good. Further, since the heat treatment chamber 41 and the cooling processing chamber 42 are shut off by the second gate shutter 45, thermal influence on the cooling processing chamber 42 can be prevented.

After the completion of the heat treatment, the ring shutter 46
Then, the second gate shutter 45 is lowered, and the lift pins 47 are raised (Step 5). At this time, while the filling of the inert gas such as N ₂ into the heat treatment chamber 41 is stopped, the supply of the inert gas such as N ₂ into the cooling treatment chamber 42 is started, and the inert gas is cooled. By filling the processing chamber 42, the inside of the cooling processing chamber 42 has a low oxygen concentration (for example, 5
(0 ppm or less) is maintained in the atmosphere.

Thereafter, the cooling plate 53 enters the heat treatment chamber 41, receives the wafer W from the lift pins 47 (Step 6), and lowers the lift pins 47 (Step 7).

Then, the cooling plate 53 is returned into the cooling processing chamber 42, the second gate shutter 45 is raised, and the wafer W is cooled in a low oxygen concentration (for example, 50 ppm or less) atmosphere (step 8). The cooling temperature at this time is, for example, 200 to 400 ° C. At this time, since the film is cooled in a low oxygen concentration atmosphere, oxidation of the film is effectively prevented. After the completion of the cooling process, the supply of the inert gas such as N ₂ into the cooling process chamber 42 is stopped.

Thereafter, the second gate shutter 45 is lowered, the cooling plate 53 enters the heating processing chamber 41 (step 9), and then the lift pins 47 are raised, and the wafer W is returned from the cooling plate 53 to the lift pins 47. (Step 10).

The cooling plate 53 after unloading the wafer W is returned into the cooling processing chamber 42, and the first gate shutter 44 is opened (step 11). Then, the wafer W is returned to the main transfer mechanism 18 (FIGS. 1 and 3) (step 12). Thus, the heating process and the cooling process are completed.

As described above, during the curing treatment of the interlayer insulating film formed on the wafer W, the heating treatment and the cooling treatment are performed in a low oxygen concentration atmosphere by one unit in which the heating treatment chamber and the cooling treatment chamber communicate with each other. Therefore, oxidation of the interlayer insulating film can be sufficiently prevented. Further, since the processing is not a batch heating by a heating furnace but a single wafer processing, precise temperature control can be performed for each wafer, and the in-plane uniformity of the heating temperature of the wafer can be maintained well. Further, since the heat treatment is performed by the hot plate 43 and the ring shutter 46 is used, the in-plane uniformity of the heating temperature can be significantly improved. Further, since the single-wafer processing is performed as described above, the management for each lot can be performed instead of the conventional management for each lot, and the yield can be improved.

The heating processing chamber 41 and the cooling processing chamber 4
2 has a structure capable of supplying an inert gas such as N _{2 to} each of them, and has a structure capable of exhausting from each of the heating processing chamber 41 and the cooling processing chamber 42, so that one of the wafers W can be loaded and unloaded. In the other case, the treatment can be performed in a low oxygen concentration atmosphere.

The present invention is not limited to the above-described embodiment, but can be variously modified. For example, the substrate to be processed is not limited to a semiconductor wafer, but may be another substrate such as an LCD substrate. Further, the type of the film is not limited to the interlayer insulating film, and any film may be used as long as a curing treatment by heating in a low oxygen concentration atmosphere after application is required.

[0043]

As described above, according to the present invention,
In the coating film forming apparatus, a curing processing unit for curing the coating film is provided with a heating processing chamber for heating the substrate and a cooling processing chamber for cooling the heated substrate, and these heating processing chambers and Since a means for supplying an inert gas to the cooling treatment chamber and a means for exhausting the gas are provided, the heating treatment and the cooling treatment can be continuously performed in an inert atmosphere having a low oxygen concentration, and the oxidation of the coating film can be sufficiently performed. Can be prevented. In addition, since the single-wafer processing is performed in which the wafers are heated one by one in the heat treatment chamber, precise temperature control can be performed for each wafer, and excellent in-plane uniformity of the heat treatment can be maintained. Further, since the single-wafer processing is used, the management can be performed for each wafer instead of the conventional management for each lot, so that the yield can be improved. In addition, heat treatment is performed on a hot plate, and
By using a ring shutter, the heating temperature
Uniformity can be significantly increased.

[Brief description of the drawings]

FIG. 1 shows a coating film forming apparatus (S) according to an embodiment of the present invention.
FIG. 2 is a plan view of an upper stage and a lower stage of an OD system).

FIG. 2 is a side view of the coating film forming apparatus (SOD system) shown in FIG.

FIG. 3 is a side view showing two processing unit groups mounted in the coating film forming apparatus (SOD system) shown in FIG. 1 and formed by stacking a plurality of processing units in multiple stages.

FIG. 4 is a plan view schematically showing a DCC processing unit according to the embodiment.

FIG. 5 is a sectional view schematically showing the DCC processing unit shown in FIG. 4;

FIG. 6 is a flowchart of processing in the DCC processing unit.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1; Processing part 2; Side cabinet 3; Carrier station (CSB) 12; Coating processing unit (SCT) for high viscosity 13; Coating processing unit (SCT) for low viscosity 20; DCC processing unit 41; Cooling processing chamber 43; hot plate 44; first gate shutter 45; second gate shutter 46; ring shutter 47; lift pin 51; exhaust pipe (exhaust means) 52; communication port 53; cooling plate 56; Supply means) 57; exhaust pipe (exhaust means)

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI H01L 21/90 Q (72) Inventor Shinji Koga 2655 Tsukure, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Tokyo Electron Kyushu Kumamoto Office Examiner Keishi Fujiwara (56) References JP-A-10-55951 (JP, A) JP-A-11-16898 (JP, A) JP-A-4-171935 (JP, A) JP-A-6-177118 (JP) , A) JP-A-9-181060 (JP, A) JP-A-10-22189 (JP, A) JP-A-5-508740 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB Name) H01L 21/31 H01L 21/027 H01L 21/316 H01L 21/768

Claims (14)

(57) [Claims] A coating liquid is applied to a substrate to form a coating film on the substrate.
A coating film forming apparatus for forming a coating film, comprising: a coating processing unit for coating a coating liquid on a substrate;
A curing processing unit for heating the substrates coated with the coating solution one by one to a predetermined temperature.processing
Having a hot plateA heat treatment chamber,When the hot plate is heating the substrate,
A ring shutter surrounding the perimeter, Said Communicates with the heat treatment chamber to cool the heat-treated substrate
Cooling chamber, and inert gas that supplies inert gas to the heating chamber and cooling chamber
Gas supply means and exhaust means for exhausting the heat treatment chamber and the cooling treatment chamber are provided.
A coating film forming apparatus. 2. The coating film forming apparatus according to claim 1, wherein the curing processing unit has a shutter that shuts off a space between a heating processing chamber and a cooling processing chamber. 3. The heating processing chamber and the cooling processing chamber each include an inert gas supply unit, and the exhaust means includes the heating processing chamber and the cooling processing chamber. 3. The coating film forming apparatus according to claim 1, further comprising an exhaust unit. 4. The heat treatment chamber includes a plurality of pins for supporting and elevating the substrate, and a substrate mounted on the plurality of pins.
To raise the substrate on the hot plate.
The coating film forming apparatus according to any one of claims 1 to 3 , further comprising a lowering mechanism . 5. The cooling processing chamber receives a substrate that has been heated and placed on the plurality of pins, is carried into a cooling processing chamber, is cooled to a predetermined temperature, and after cooling, the substrate is cooled by the plurality of pins. The coating film forming apparatus according to any one of claims 1 to 4 , further comprising a cooling plate that is placed back on the pins. 6. A heating process for the substrate on which the coating film is formed.
Curing treatment to cure the coating film by applying treatment and cooling treatment
An apparatus that heats substrates coated with a coating solution one by one to a predetermined temperature.processing
Having a hot plateA heat treatment chamber,When the hot plate is heating the substrate,
A ring shutter surrounding the perimeter, Said Communicates with the heat treatment chamber to cool the heat-treated substrate
Cooling chamber, and inert gas that supplies inert gas to the heating chamber and cooling chamber
Gas supply means; and exhaust means for exhausting the heating processing chamber and the cooling processing chamber.
A curing treatment device comprising: 7. A heating process for the substrate on which the coating film is formed.
Curing treatment to cure the coating film by applying treatment and cooling treatment
A device, Heat treatment of the substrate coated with the coating solution one by one to a predetermined temperature
A heat treatment chamber having a hot plate, Communicates with this heat treatment chamber to cool the heat-treated substrate
Cooling processing chamber It is provided so as to be movable between the heating processing chamber and the cooling processing chamber.
Substrate heated by the hot plate
The substrate is transferred to the cooling processing chamber while being cooled
Cooling plate, Inert supply of inert gas to heating and cooling chambers
Gas supply means; Exhaust means for exhausting the heat treatment chamber and the cooling treatment chamber.
A curing treatment device comprising: 8. Furthermore, claims, characterized in that it comprises a shutter for blocking between the heating chamber and the cooling treatment chamber
The curing treatment device according to claim 6 or 7 . 9. The inert gas supply unit has an inert gas supply unit in each of the heating processing chamber and the cooling processing chamber, and the exhaust unit includes the heating processing chamber and the cooling processing chamber. claims, characterized in that each of has an exhaust
The curing device according to any one of claims 6 to 8 . Wherein said heat treatment chamber, supporting the lifting of the substrate
The plurality of pins to be moved and the substrate placed on the plurality of pins are lowered to place the substrate on the hot plate.
The curing apparatus according to any one of claims 6 to 9 , further comprising an elevating mechanism . 11. The cooling processing chamber receives a substrate that has been heat-processed and placed on the plurality of pins, is carried into a cooling processing chamber, cooled to a predetermined temperature, and after cooling, the substrate is removed from the plurality of pins. 6 to claim characterized by having a cooling plate that is placed back into the pin curing apparatus according to any one of claims 10. 12. A substrate on which a coating film has been formed is subjected to heat treatment and heat treatment.
Curing method to cure coating film by applying cooling process
And Place a substrate on a hot plate in the heating chamber
And heat-treating the substrate; Allow the cooling plate to enter the heat treatment chamber and cool
Place the substrate on the cooling plate, and
The cooler on which the substrate is placed while cooling the substrate on
Plate from the heat treatment chamber to the heat treatment chamber
The substrate is moved to the cooling processing chamber
The step of bringing in, Continuing the cooling of the substrate in the cooling processing chamber,
Supply an inert gas to the heat treatment chamber and the cooling treatment chamber.
And performing the above steps continuously in an inert atmosphere.
Characteristic curing method. 13. The heat treatment chamber and the cooling treatment chamber
Of which substrate is present, the inert gas
Exhaust while supplying oxygen, low oxygen with 50ppm or less oxygen
13. The method according to claim 12, wherein the concentration atmosphere is maintained.
Hardening treatment method. 14. The heating processing step,
Around the hot plate provided in the science room
Surrounding with a gutter and supplying the inert gas
14. Curing according to claim 12 or claim 13, characterized in that
Processing method .