JP2001044117A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively replace the inside of processing chamber with N2 gas to execute heating under the low oxygen atmosphere within a short period of time by supplying the gas for purge almost in parallel to a substrate allocated on a hot plate via a gap forming member and to the first surface and second surface of the substrate. SOLUTION: In a low oxygen high temperature heating processing station OHP, a proximity sheet 251 as a gap forming material, a proximity pin 252 and a guide 253 are provided and height of the proximity sheet 251 and proximity pin 252 is set two times the height of the aging process station, cooling process station and low temperature heating process station. Thereby, the air in the gap between a wafer W and hot plate 232 is no longer remained at the time of replacement with the N2 gas, and the time required for setting the closed space as the processing chamber between the lift cover 238 and hot plate 232 to the desired low oxygen atmosphere can be shortened.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention belongs to the technical field of a substrate processing apparatus for heating or cooling a substrate such as a semiconductor wafer.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
For example, SOD (Spin on Dielectric)
c) An interlayer insulating film is formed by the system. This S
In the OD system, a coating film is spin-coated on a wafer and subjected to a chemical treatment or a heat treatment to form an interlayer insulating film.

For example, when an interlayer insulating film is formed by a sol-gel method, first, an insulating film material, for example, a colloid of TEOS (tetraethoxysilane) is coated on a semiconductor wafer (hereinafter, referred to as "wafer") with an organic solvent. Is supplied. Next, the wafer supplied with the solution is subjected to a gelling process, and then the solvent is replaced. Then, the wafer in which the solvent has been replaced is heated.

[0004] In these series of steps, various heating processes and cooling processes are performed. Generally, such a heating process or a cooling process is performed by placing the wafer on a hot plate or a cooling plate (hereinafter, referred to as a plate) for heating or cooling the wafer. If the wafer is placed directly on the plate, a gap forming member is arranged on the plate because the wafer is adversely affected by static electricity, and the wafer is heated or cooled while forming a gap between the wafer and the plate. I have.

[0005] By the way, the heat treatment and the cooling treatment are performed.
Of the solvent-substituted wafers at high temperatures
Is performed in a low oxygen atmosphere from the viewpoint of preventing oxidation.
You. Such a low oxygen atmosphere is, for example, a wafer
After loading, N ₂By replacing with gas
Is formed.

[0006]

However, if much time is required to form a desired low oxygen atmosphere by replacing the processing chamber with N ₂ , the time required for the heat treatment under low oxygen is substantially reduced. And the overall processing time for forming the insulating film is affected. for that reason,
It is desired to efficiently replace the inside of the processing chamber with N ₂ gas.

An object of the present invention is to provide a substrate processing apparatus capable of performing heat treatment under low oxygen in a short time and further reducing the total time required for substrate processing.

Another object of the present invention is to provide a substrate processing apparatus capable of uniformly performing a heat treatment under low oxygen.

[0009]

In order to solve the above-mentioned problems, a main aspect of the present invention is to provide a processing chamber for heating a substrate having a first surface and a second surface, and a processing chamber in the processing chamber. A hot plate disposed to heat-treat the substrate from the second surface side; a gap forming member for maintaining a predetermined gap between a surface of the hot plate and a second surface of the substrate; A gas supply unit configured to supply a purge gas to the first surface and the second surface of the substrate substantially parallel to the substrate disposed on the hot plate via the gap forming member and disposed around the plate; 1 supply unit.

In the present invention, the gas for purging is supplied to the first surface and the second surface of the substrate substantially in parallel with the substrate placed on the hot plate via the gap forming member. The periphery of the substrate can be efficiently replaced with the purge gas, and the periphery of the substrate can be uniformly replaced. Therefore, heat treatment under low oxygen can be performed in a short time, and the total time required for substrate processing can be shortened. In addition, heat treatment under low oxygen can be performed uniformly.

Another aspect of the present invention is a plurality of types of processing stations including a plate for heating or cooling a substrate, and a gap forming member for holding the substrate away from the plate. And a transfer device for transferring substrates between these processing stations. Of the plurality of types of processing stations, a processing station that heats a substrate in an atmosphere with a reduced oxygen concentration is higher than other processing stations. A high gap forming member is provided.

In the present invention, since the height of the gap forming member in the processing station for heat-treating the substrate in an atmosphere having a reduced oxygen concentration is high, for example, when the processing chamber for the heat treatment is replaced with N2 gas, No air remains in the gap between the plate and the plate. Therefore, the time required for setting a desired low oxygen atmosphere in the treatment chamber can be shortened, and heat treatment under low oxygen can be performed in a short time. In comparison with this, since the height of the gap forming member is low in the other processing stations, the heating processing and the cooling processing can be performed more efficiently in a short time.
Therefore, according to the present invention, the total time required for substrate processing can be shortened.

In one embodiment of the present invention, the processing station for heat-treating the substrate in an atmosphere having a reduced oxygen concentration has a gap forming member approximately twice as high as other processing stations. It is characterized by. Thereby, the above effect can be made more remarkable.

In one embodiment of the present invention, the processing station for heating the substrate in an atmosphere having a reduced oxygen concentration has a gap forming member having a height of about 0.1 mm to 0.2 mm. And If the height of the gap forming member is less than 0.1 mm, for example, when the processing chamber for heat treatment is replaced with N2 gas, air tends to remain in the gap between the substrate and the plate, and the height of the gap forming member is reduced. If the thickness is higher than 0.2 mm, heat treatment under low oxygen cannot be performed efficiently.

A substrate processing apparatus according to the present invention includes a coating processing station for applying an insulating film material to a substrate, an aging processing station for performing an aging process on the substrate on which the insulating film material is applied, and a solvent for performing the aging process on the substrate. A solvent exchange processing station for performing exchange processing, a low-temperature heating processing station for performing low-temperature heating on the solvent-exchanged substrate, and a low-oxygen high-temperature heating processing station for performing high-temperature heating of the low-temperature heated substrate under low oxygen. Curing the substrate subjected to the low-oxygen high-temperature heat treatment under low oxygen.
A low oxygen cure / cooling treatment station for cooling treatment,
Provided integrally with a transfer device for transferring the substrate between these stations, at least the aging processing station, the low-temperature heating processing station and the low-oxygen curing / cooling processing station, respectively, a plate for heat-processing the substrate, A gap forming member for holding the substrate away from the plate, wherein the height of the gap forming member of the low-temperature heating processing station or the low-oxygen curing / cooling processing station is different from that of another processing station. The height is higher than the height.

In a conventional apparatus of this type, the step of aging the substrate coated with the insulating film material and the step of solvent exchanging the substrate subjected to the aging processing are performed by removing the substrate coated with the insulating film material from the system. In this case, the total time required for substrate processing is extremely long. On the other hand, in the present invention, the aging processing station for aging the substrate coated with the edge film material and the solvent exchange processing station for performing the solvent exchange processing on the aged substrate are integrated with the system. The total time required for this is very short. In addition, the aging processing station and the solvent exchange processing station are low-
Since it functions as a buffer for temporarily holding the substrate with respect to the cooling processing station, the tact time can be matched.

In one embodiment of the present invention, a first cooling processing station for cooling the substrate before applying the insulating film material to the substrate, and a second cooling processing station for cooling the substrate subjected to the low oxygen curing / cooling processing. A cooling processing station, wherein the first and second cooling processing stations are
A plate for heating or cooling the substrate and a gap forming member for holding the substrate apart from the plate are provided.

[0018]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 to FIG. 3 show an S according to an embodiment of the present invention.
1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.

In the SOD system 1, a plurality of, for example, 25, semiconductor wafers (hereinafter, referred to as wafers) W as substrates are carried into or out of the system by a wafer cassette CR, for example, in units of 25 wafers. A cassette block 10 for loading / unloading wafers W from / to the CR and various single-wafer processing stations for performing predetermined processing on the wafers W one by one in the SOD coating process are arranged at predetermined positions in multiple stages. Processing block 11
And a cabinet 12 in which an ammonia water bottle, a bubbler, a drain bottle, and the like required in the aging step are installed.

In the cassette block 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, up to four wafer cassettes X are provided at the positions of the projections 20 a on the cassette mounting table 20 with their respective wafer entrances facing the processing block 11. A wafer carrier 21 which is placed in a row in the direction and is movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z vertical direction) of the wafers stored in the wafer cassette CR is selectively provided in each wafer cassette CR. Is to be accessed. Further, the wafer transfer body 21 is configured to be rotatable in the θ direction.
The transfer / cooling plate (TCP) belonging to the multistage station section of the third set G3 on the side is also accessible.

In the processing block 11, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 22 is provided at the center, and all the processing stations are multi-staged around one or more sets around it. Are located in In this example,
This is a multistage arrangement of four sets G1, G2, G3, G4. The multistage stations of the first and second sets G1, G2 are juxtaposed on the front side of the system (in FIG. 1), and the multistage of the third set G3. The stations are arranged adjacent to the cassette block 10, and the multistage stations of the fourth set G4 are arranged adjacent to the cabinet 12.

As shown in FIG. 2, in the first set G1, a wafer W is placed on a spin chuck in a cup CP to supply an insulating film material, and the wafer is rotated to form a uniform insulating film on the wafer. A SOD coating processing station (SCT) for coating, and a wafer W is placed on a spin chuck in a cup CP to supply a chemical solution for exchange such as HMDS and heptane, and a solvent in an insulating film applied on the wafer is dried before a drying step. In addition, a solvent exchange processing station (DSE) for performing a process of replacing with another solvent is superposed in two stages from the bottom.

In the second set G2, an SOD coating processing station (SCT) is arranged on the upper stage. Incidentally, if necessary, an SOD coating processing station (SCT), a solvent exchange processing station (DSE), and the like can be arranged in the lower stage of the second set G2.

As shown in FIG. 3, in the third set G3, 2
The low oxygen high temperature heating processing station (OHP), the low temperature heating processing station (LHP), the two cooling processing stations (CPL), the transfer / cooling plate (TCP), and the cooling processing station (CPL) They are arranged in multiple stages from the top. Here, the low-oxygen high-temperature heating processing station (OHP) has a hot plate on which the wafer W is placed in a process chamber that can be sealed, and discharges N2 uniformly from a hole on the outer periphery of the hot plate while upper portion of the processing chamber. Exhaust from the center,
The wafer W is heated at a high temperature in a low oxygen atmosphere. The low-temperature heat processing station (LHP) has a hot plate on which the wafer W is placed, and heat-processes the wafer W at a low temperature. The cooling processing station (CPL) has a cooling plate on which the wafer W is placed, and cools the wafer W. The transfer / cooling plate (TCP) has a two-stage structure having a cooling plate for cooling the wafer W in a lower stage and a transfer table in an upper stage, and transfers the wafer W between the cassette block 10 and the processing block 11.

In the fourth set G4, a low-temperature heating processing station (LHP), two low-oxygen curing / cooling processing stations (DCC), and an aging processing station (D
AC) are arranged in multiple stages from the top. here,
The low oxygen curing / cooling treatment station (DCC) has a hot plate and a cooling plate adjacent to each other in a process chamber that can be sealed, and is subjected to high temperature heat treatment and heat treatment in a N 2 -substituted low oxygen atmosphere. The wafer W is cooled. An aging processing station (DAC) introduces NH3 + H2O into a process chamber that can be sealed, performs aging processing on the wafer W, and wet-gels the insulating film material film on the wafer W.

FIG. 4 is a perspective view showing the appearance of the main wafer transfer mechanism 22. The main wafer transfer mechanism 22 has a cylindrical support comprising a pair of opposed wall portions 25 and 26 connected at an upper end and a lower end. A wafer transfer device 30 is provided inside the body 27 so as to be able to move up and down in the vertical direction (Z direction). The cylindrical support 27 is connected to a rotation shaft of a motor 31, and is rotated integrally with the wafer transfer device 30 about the rotation shaft by the rotation driving force of the motor 31. Therefore, the wafer transfer device 30 is rotatable in the θ direction. For example, three tweezers are provided on the transfer base 40 of the wafer transfer device 30. These tweezers 4
1, 42 and 43 are both wall portions 2 of the cylindrical support 27.
It has a form and size that allow it to pass through the side opening 44 between 5 and 26, and is configured to be able to move back and forth along the X direction. Then, the main wafer transfer mechanism 22
The tweezers 41, 42, and 43 access processing stations disposed therearound and transfer wafers W to and from these processing stations.

FIG. 5 shows the cooling processing station (C
PL), and FIG. 6 is a plan view thereof.

At substantially the center of the cooling processing station (CPL), a cooling plate 32 as a plate for cooling the wafer W is disposed. The cooling plate 32 is, for example, a circle having a diameter slightly larger than the wafer W, and a cooling pipe (not shown) is arranged in the cooling plate 32.
Cooling water circulates through the cooling pipe.

A plurality of through holes 34 are provided between the front surface and the back surface of the cooling plate 32, for example, at three positions. In these through holes 34, a plurality of, for example, three support pins 35 for transferring the wafer W are inserted so as to be able to protrude and retract. These support pins 35 are integrally connected on the back side of the cooling plate 32 by a connecting member 36 disposed on the back side of the cooling plate 32. The coupling member 36 is connected to an elevating cylinder 37 arranged on the back side of the cooling plate 32. By the lifting operation of the lifting cylinder 37, the support pins 35 protrude or sink from the surface of the cooling plate 32. The support pins 35 transfer the wafer W to and from the main wafer transfer mechanism 22 while protruding from the surface of the cooling plate 32. The support pins 35 receiving the wafer W from the main wafer transfer mechanism 22 descend and sink into the cooling plate 32,
As a result, the wafer W comes into close contact with the surface of the cooling plate 32, and the wafer W is cooled.

The cooling cover 3 is provided above the cooling plate 32.
8 are arranged. Note that it is also possible to provide a support pin on the upper surface of the cooling cover 38 to constitute a standby portion for the wafer W.

Further, the cooling processing station (CPL)
The proximity sheet 51 as a gap forming member for floating and holding the wafer W on the cooling plate 32 without adhering to the cooling plate 32 is provided at a plurality of locations, for example, at six locations on the outer peripheral portion of the mounting position of the wafer W. , And a proximity pin 52 as a gap forming member is disposed at the center of the wafer W mounting position.

The proximity sheets 51 extend outside the wafer W mounting position, and guide guides 53 for guiding the substrates are arranged at the positions where the respective proximity sheets 51 extend. I have.

The height of the proximity sheet 51 and the proximity pins 52 in the cooling processing station (CPL) is set to, for example, about 0.1 mm. Thereby, the gap between the cooling plate 32 and the wafer W becomes very small, and the cooling effect can be enhanced.

FIG. 7 is a sectional view of the above aging processing station (DAC).

Aging processing station (DAC)
Is closely connected to a peripheral portion of the heating plate 61 via a seal member 62 so as to form a space S forming a processing chamber above the heating plate 61 made of, for example, ceramics, in which a heater 61a is incorporated. And a gas supply path 64 having a supply port formed on the surface of the heating plate 61 so as to surround the wafer placed on the heating plate 61. And an evacuation path 65 having a suction port formed at the center of the heating plate 61, and three elevating pins 66 for elevating and lowering the wafer W between the heating plate 61 and an upper position thereof.

This aging processing station (DA)
In C), ammonia is vaporized by a bubbler and a mass flow controller (not shown) in the side cabinet 12 and supplied into the processing chamber S via the above-described gas supply path 64, and the exhaust gas from the exhaust path 65 , Is trapped by a drain tank (not shown) in the side cabinet 12.

The aging processing station (D
AC), the cooling processing station (CPL)
Similarly, a proximity sheet 51 and a proximity pin 52 as gap forming members having a height of about 0.1 mm, for example, and a guide 53 are provided.

FIG. 8 is a sectional view of the low-temperature heat treatment station (LHP) described above.

At a substantially center of the low-temperature heat treatment station (LHP), a hot plate 132 as a plate for heating the wafer W is disposed. A heater (not shown) is embedded in the hot plate 132.

A plurality of, for example, three, through holes 134 are provided between the front surface and the back surface of the hot plate 132. In these through holes 134, a plurality of, for example, three support pins 135 for transferring the wafer W are inserted so as to be able to protrude and retract. These support pins 135 are connected to the hot plate 1
The heating plate 132 is integrally joined on the back side by a joining member 136 arranged on the back side of the heating plate 32. Coupling member 13
6 is connected to an elevating cylinder 137 arranged on the back side of the hot plate 132. The support pins 135 protrude or sink from the surface of the hot plate 132 by the elevating operation of the elevating cylinder 137.

The elevating cover 1 is located above the hot plate 132.
38 are arranged. The lifting cover 138 can be raised and lowered by a lifting cylinder 139. Then, when the elevating cover 138 is lowered as shown in the drawing, a closed space for performing a heat treatment is formed between the elevating cover 138 and the hot plate 132.

Further, the low-temperature heat treatment station (LH
P), the aging processing station (DA
Similar to C) and the cooling station (CPL), for example, a proximity sheet 51 and a proximity pin 52 as gap forming members having a height of about 0.1 mm, and a guide 53 are provided. Thus, the effect of the heat treatment can be enhanced by narrowing the gap between the hot plate 132 and the wafer W.

FIG. 9 is a sectional view of the low-oxygen high-temperature heat treatment station (OHP) described above.

A low oxygen and high temperature heat treatment station (OH
At approximately the center of P), a hot plate 232 as a plate for heating the wafer W is disposed. A heater (not shown) is embedded in the hot plate 232.

A plurality of, for example, three through holes 234 are provided between the front surface and the back surface of the hot plate 232. In each of the through holes 234, a plurality of, for example, three support pins 235 for delivering the wafer W are inserted so as to be able to protrude and retract. These support pins 235 are
The heat plate 232 is integrally joined on the back surface side by a joining member 236 arranged on the back surface side of the heat plate 32. Coupling member 23
6 is connected to an elevating cylinder 237 arranged on the back side of the hot plate 232. The support pin 235 protrudes or sinks from the surface of the hot plate 232 by the elevating operation of the elevating cylinder 237.

The elevating cover 2 is located above the hot plate 232.
38 are arranged. The elevating cover 238 can be moved up and down by an elevating cylinder 239. Then, when the elevating cover 238 is lowered as shown in the drawing, a closed space for performing a heat treatment is formed between the elevating cover 238 and the hot plate 232.

Further, the wafer W is heated at a high temperature in a low-oxygen atmosphere by exhausting the N 2 gas uniformly from the hole 240 on the outer periphery of the hot plate 232 and exhausting the gas through the exhaust port 241 at the center of the elevating cover 238. Has become.

In the low-oxygen high-temperature heat treatment station (OHP), similar to the above-described aging treatment station (DAC), cooling treatment station (CPL), and low-temperature heat treatment station (LHP), a proximity sheet as a gap forming member is provided. 251 and the proximity pin 252, and further, a guide 253 are provided. The height of the proximity sheet 251 and the proximity pin 252 is set to 0.2 mm, and the aging processing station (DAC) and the cooling processing station described above are provided. (CPL), low temperature heat treatment station (LHP)
It is twice as tall as the one. This gives N
2 When the gas is replaced, air does not remain in the gap between the wafer W and the hot plate 232, and a desired low oxygen atmosphere is formed in the closed space between the elevating cover 238 and the hot plate 232, which is a processing chamber. And the heat treatment under low oxygen can be performed in a short time.

FIG. 10 is a plan view of the above-described low oxygen curing / cooling processing station (DCC), and FIG. 11 is a sectional view thereof.

Low oxygen cure / cooling station (D
CC) includes a heat treatment chamber 341 and a cooling treatment chamber 342 provided adjacent to the heat treatment chamber 341. The heat treatment chamber 341 has a heat treatment temperature that can be set to 200 to 470 ° C. It has a plate 343. The low-oxygen curing / cooling processing station (DCC) further includes a first gate shutter 344 that opens and closes when transferring the wafer W to and from the main wafer transfer mechanism 22, a heating processing chamber 341 and a cooling processing chamber 342. And a ring shutter 346 that moves up and down together with the second gate shutter 345 while surrounding the wafer W around the hot plate 343. further,
The heating plate 343 is provided with a 3
The lift pins 347 are provided to be able to move up and down. Note that a shielding screen may be provided between the hot plate 343 and the ring shutter 346.

An elevating mechanism 348 for elevating the three lift pins 347 is provided below the heat treatment chamber 341.
The ring shutter 346 is connected to the second gate shutter 34.
5 and a lifting mechanism 350 for lifting and lowering the first gate shutter 344 to open and close it.

In the heat treatment chamber 341, N ₂ gas is supplied from a ring shutter 346 as a purge gas as described later.
Gas is supplied. An exhaust pipe 351 is connected to an upper portion of the heat treatment chamber 341, and the inside of the heat treatment chamber 341 is configured to be exhausted through the exhaust pipe 351. Further, an oxygen concentration monitor 361 for monitoring the oxygen concentration in the heat treatment chamber 341 is connected to the heat treatment chamber 341. Then, as described later, by exhausting while supplying N ₂ gas, the inside of the heat treatment chamber 341 is maintained at a low oxygen concentration (for example, 50 ppm or less) atmosphere. Of course, the oxygen concentration monitoring unit may be arranged on an exhaust path such as an exhaust pipe.

The heating processing chamber 341 and the cooling processing chamber 342
Is communicated through the communication port 352 with the wafer W
A cooling plate 353 for mounting and cooling is mounted so as to be movable in the horizontal direction by a moving mechanism 355 along a guide plate 354. Thereby, the cooling plate 352 is
The wafer W, which can enter the heat treatment chamber 341 through the communication port 352 and is heated by the hot plate 343 in the heat treatment chamber 41, is received from the lift pins 347, and is carried into the cooling treatment chamber 342. After cooling the wafer W, the wafer W is returned to the lift pins 347.

The set temperature of the cooling plate 353 is, for example, 15 to 25 ° C., and the applicable temperature range of the wafer W to be cooled is, for example, 200 to 470 ° C.

Further, the cooling processing chamber 342 is provided with a supply pipe 35.
6, and an inert gas such as N2 is supplied to the inside thereof, and the inside is exhausted to the outside through an exhaust pipe 357. This allows
Similarly to the heat treatment chamber 341, the inside of the cooling treatment chamber 342 is maintained at a low oxygen concentration (for example, 50 ppm or less) atmosphere.

On the hot plate 343, a height similar to that of the above-described low-oxygen high-temperature heat treatment station (OHP) is set at 0.2.
Proximity sheet 251 and proximity pin 252 mm and guide guide 253 are provided. As a result, air does not remain in the gap between the wafer W and the hot plate 343 when replacing with the N2 gas, and the time for setting the inside of the heat treatment chamber 341 to a desired low oxygen atmosphere can be shortened. In addition, heat treatment under low oxygen can be performed in a short time. FIG. 13 shows the results of an experiment performed to confirm such an effect. A in the figure indicates a wafer W
Change in the oxygen concentration in the gap between the wafer W and the hot plate 343 when the gap between the hot plate 343 and the hot plate 343 is 0.2 mm. This shows a temporal change of the oxygen concentration in the gap. From this figure, it can be seen that the oxygen concentration decreases as the gap between the wafer W and the hot plate 343 increases.

The structure of the cooling plate disposed below the transfer / cooling plate (TCP) is substantially the same as that of the cooling processing station (CPL) shown in FIGS. 5 and 6. The height is likewise 0.1
mm proximity sheet and proximity pin,
Further, a guide is provided.

FIG. 14 is a view showing the configuration of the inside of the heat treatment chamber 341 in the low oxygen curing / cooling treatment station (DCC) described above. This figure shows the ring shutter 3
46 rises, and this ring shutter 346
3 shows a state in which the periphery of the wafer W placed at the heating position on the wafer 3 is surrounded.

The inside of the ring shutter 346 contains N ₂
N ₂ gas is supplied from a gas supply source 362. The inner wall of the ring shutter 346 is provided with a large number of ejection holes 363 for ejecting the N ₂ gas toward the wafer W on the hot plate 343 substantially in parallel with the wafer W.

In order to supply the N ₂ gas to both the front and back surfaces of the wafer W placed on the hot plate 343 via the proximity sheet and the proximity pins, some of the many ejection holes 363 are provided. Is provided at a position lower than the back surface of the wafer W disposed on the hot plate 343 via the proximity sheet and the proximity pins, and the remaining ejection holes 363 are provided at a position higher than the front surface of the wafer W. .

[0062] Further, the control unit 364, via the supply amount and the exhaust pipe 351 of the _{N 2} gas from the _{N 2} gas supply source 362 according to the oxygen concentration in the heat treatment chamber 341 which is monitored by the oxygen concentration monitor 361 All the displacements are controlled. By performing the control in this manner, the consumption of N ₂ gas can be reduced.

With the lift pins 347 raised, the wafer W is transferred onto the lift pins 347 from the main wafer transfer mechanism 22. Thereafter, the first and second gate shutters 344, 345 are closed. N in the heat treatment chamber 341
_The N ₂ gas is supplied from the _two- gas supply source 362, and the inside of the heat treatment chamber 341 is further exhausted through the exhaust pipe 351. At this stage, a large amount of N ₂ gas of about 30 l / min is supplied. Thereby, the air remaining in the heat treatment chamber 341 is pushed out from the exhaust pipe 351 and the purging proceeds rapidly.

From such a state, the lift pins 347 are lowered, and the wafer W is placed on the hot plate 343 via the proximity sheet and the proximity pins. In the present embodiment, as described above, since the N ₂ gas is supplied substantially parallel to the wafer W and on both the front and back surfaces of the wafer W, the periphery of the wafer W can be efficiently replaced with the N ₂ gas. The surroundings of the N ₂ gas can be uniformly replaced.

[0065] Thereafter, when the oxygen concentration is stabilized at a predetermined value or less, stop the supply of the N ₂ gas in a small amount of about 10l / min continues to be subsequently supplied N ₂ gas by this amount. Thus it is possible to reduce the consumption of N ₂ gas by throttling the supply of N ₂ gas.

Next, the operation of the SOD system 1 configured as described above will be described. FIG. 12 shows this SOD
2 shows a processing flow in the system 1.

First, in the cassette block 10, the wafer W before processing is transferred from the wafer cassette CR to the wafer carrier 2.
1 and transferred to a transfer table in a transfer / cooling plate (TCP) belonging to the third set G3 on the processing block 11 side.

The wafer W transferred to the transfer table in the transfer / cooling plate (TCP) is transferred to the cooling processing station (CPL) via the main wafer transfer mechanism 22. Then, at the cooling processing station (CPL), the wafer W is transferred to the SOD coating processing station (SCT).
(Step 901).

The wafer W which has been cooled at the cooling processing station (CPL) is
It is transported to the D coating processing station (SCT). Then, in the SOD coating processing station (SCT), the wafer W is subjected to the SOD coating processing (step 90).
2).

The wafer W that has been subjected to the SOD coating processing at the SOD coating processing station (SCT) is transferred to the aging processing station (DAC) via the main wafer transfer mechanism 22. And the aging processing station (DA
In C), NH3 + H2O is introduced into the processing chamber to perform an aging process on the wafer W to gel the insulating film material film on the wafer W (step 903).

The wafer W that has been aged at the aging processing station (DAC) is transferred to the main wafer transfer mechanism 22.
Through a solvent exchange processing station (DSE). Then, at the solvent exchange processing station (DSE), a chemical solution for exchange is supplied to the wafer W, and a process of replacing the solvent in the insulating film applied on the wafer with another solvent is performed (step 904).

The wafer W which has been subjected to the replacement processing at the solvent exchange processing station (DSE) passes through the main wafer transfer mechanism 22 to the low temperature heating processing station (LH).
P). Then, the wafer W is subjected to a low-temperature heat treatment at a low-temperature heat treatment station (LHP) (step 905).

The wafer W subjected to the low-temperature heat treatment at the low-temperature heat treatment station (LHP) is transferred to the low-oxygen high-temperature heat treatment station (OHP) via the main wafer transfer mechanism 22. And the low oxygen high temperature heat treatment station (OH
In P), the wafer W is subjected to a high-temperature heat treatment in a low oxygen atmosphere (step 906). Alternatively, the wafer W which has been subjected to the low-temperature heat treatment at the low-temperature heat treatment station (LHP) is supplied with the low oxygen cure
It is transported to a cooling processing station (DCC). Then, in the low oxygen curing / cooling processing station (DCC), the wafer W is subjected to a high-temperature heat treatment in a low oxygen atmosphere and is cooled (step 907).

One of the steps 906 and 907 is appropriately selected depending on the insulating material applied to the wafer W.

The wafer W processed in step 906 or 907 is transferred to the cooling plate in the transfer / cooling plate (TCP) via the main wafer transfer mechanism 22. Then, the wafer W is cooled in the cooling plate of the transfer / cooling plate (TCP) (Step 908).

The wafer W cooled by the cooling plate of the transfer / cooling plate (TCP) is transferred to the wafer cassette CR via the wafer transfer body 21 in the cassette block 10.

As described above, the SOD system 1 of the present embodiment
Then, an aging processing station (DAC) for aging the wafer W coated with the edge film material and a solvent exchange processing station (D) for performing the solvent exchange processing on the aged wafer W
Since the SE) is integrated with the system, the total time required for substrate processing is very short. In addition, the aging processing station (DAC) and the solvent exchange processing station (DSE) are like buffers that temporarily hold the wafer W with respect to the low oxygen high temperature heating processing station (OHP) and the low oxygen curing / cooling processing station (DCC). Perform various functions,
It is also possible to make the tact time consistent.

Next, a modification of the heat treatment chamber shown in FIG. 14 will be described.

The heat treatment chamber 401 shown in FIG.
An ejection hole 402 for ejecting N ₂ gas is provided on the surface of the nozzle 43. By providing such ejection holes 402, N ₂ gas is more efficiently and more efficiently supplied to the gap between the back surface of the wafer W placed on the hot plate 343 and the hot plate 343 via the proximity sheet and the proximity pins. It can be supplied uniformly.

The heat treatment chamber 411 shown in FIG. 16 has a spout provided at a position lower than the back surface of the wafer W placed on the hot plate 343 via the proximity sheet and the proximity pins. ejection amount of N ₂ gas ejected from the ejection holes 363 provided through the hole 363 at a position closest to the surface of the ejection amount and the wafer W of the N ₂ gas ejected was the maximum, according to the distance from the surface of the wafer W The ejection amount of the N ₂ gas ejected from the ejection hole 363 at the position indicated by the arrow is gradually reduced. Since there is no problem even if the oxygen concentration is somewhat high at a position away from the wafer W, reducing the supply amount of the N ₂ gas at a position away from the wafer W as in this example does not adversely affect the wafer W. N
₂ Gas consumption can be reduced.

The heat treatment chamber 42 shown in FIG. 17 and FIG.
1, the N ₂ gas supply unit 422 for supplying a N ₂ gas on one side of the hot plate 343 is provided, it is provided with a discharge portion 423 for performing exhaust on the other side of the hot plate 343.

The heat treatment chamber 431 shown in FIGS. 19 and 20
It is, _{N 2} for supplying the _{N 2} gas on the surface of the hot plate 343
A gas supply section 432 is provided, and an exhaust section 433 for exhausting gas is provided on the outer periphery of the hot plate 343.

In the heat treatment chambers 421 and 431 configured as described above, the N ₂ gas can be purged more smoothly and quickly.

The heat treatment chamber 441 shown in FIG.
An exhaust portion 442 for exhausting gas is provided on the surface of the substrate 43, and an N ₂ gas supply portion 443 for supplying N ₂ gas is provided on the outer periphery of the hot plate 343. In this example, in particular, by providing the exhaust portion 442 on the surface of the hot plate 343, uniform exhaust can be performed, and thereby uniform processing can be performed by uniform purge.

The present invention can be further modified and implemented as follows.

That is, as shown in FIG.
In the heat treatment chamber 341 shown in FIG.
When the wafer W is transferred from the main wafer transfer mechanism 22 onto the lift pins 347 in a state where the wafer W is raised, first, the first and second gate shutters 344 and 345 are closed (Step 2201). Next, the lowering of the lift pins 347 is started (step 2202), and the inside of the heat treatment chamber 341 is exhausted without further supplying the N ₂ gas (step 220).
3). After reaching a certain degree of vacuum state (for example, after a lapse of a predetermined time) (step 2204), the evacuation is stopped and N ₂
The supply of gas is started (Step 2205). afterwards,
The wafer W is placed on the hot plate 343 via the proximity sheet and the proximity pins. In the present embodiment, since the N ₂ gas is supplied after the vacuum state is obtained, the purging can be performed efficiently.

Further, as shown in FIG.
In the heat treatment chamber 341 shown in FIG.
When the wafer W is transported from the main wafer transport mechanism 22 onto the lift pins 347 in a state where is raised, first, the first and second gate shutters 344 and 345 are closed (Step 2301). Next, the lowering of the lift pins 347 is started (Step 2302), and N ₂ gas is supplied while exhausting the inside of the heat treatment chamber 341 (Step 2303). afterwards,
The wafer W is placed on the hot plate 343 via the proximity sheet and the proximity pins. In the present embodiment, there is a possibility that particles may fly especially when the pressure in the processing chamber is once reduced to a vacuum state, but such a situation can be avoided since there is no pressure reducing step. In addition, N
By performing the _two substitutions, the temperature distribution can be further improved, and heat treatment at a stable temperature can be performed.

Further, as shown in FIG.
In the heat treatment chamber 341 shown in FIG.
When the wafer W is transported from the main wafer transport mechanism 22 onto the lift pins 347 in a state where is raised, first, the first and second gate shutters 344 and 345 are closed (Step 2401). Then, supplying the _{N 2} gas while exhausting the heat treatment chamber 341 (step 2402). Thereafter, the oxygen concentration is confirmed, and when the oxygen concentration falls below a predetermined value (step 2403), the lowering of the lift pins 347 is started (step 2404). Thereafter, the wafer W is transferred via the proximity sheet and the proximity pins. Hot plate 34
3 is placed. In the present embodiment, particularly, since the heating of the wafer W is started after the N ₂ substitution is completely completed, the oxidation of the wafer W can be reliably prevented.

The present invention is not limited to the above-described embodiment, but can be variously modified. For example, the substrate to be processed is not limited to a semiconductor wafer, but may be another substrate such as an LCD substrate. Further, the type of the film is not limited to the interlayer insulating film.

[0090]

As described above, according to the present invention,
Heat treatment under low oxygen can be performed in a short time, and the total time required for substrate processing can be shortened. In addition, heat treatment under low oxygen can be performed uniformly.

[Brief description of the drawings]

FIG. 1 is a plan view of an SOD system according to an embodiment of the present invention.

FIG. 2 is a front view of the SOD system shown in FIG.

FIG. 3 is a rear view of the SOD system shown in FIG. 1;

FIG. 4 is a perspective view of a main wafer transfer mechanism in the SOD system shown in FIG.

FIG. 5 is a cross-sectional view of the cooling processing station according to the embodiment of the present invention.

6 is a plan view of the cooling processing station shown in FIG.

FIG. 7 is a sectional view of the aging processing station according to the embodiment of the present invention.

FIG. 8 is a sectional view of a low-temperature heat treatment station according to the embodiment of the present invention.

FIG. 9 is a cross-sectional view of a low-oxygen high-temperature heat treatment station according to the embodiment of the present invention.

FIG. 10 is a plan view of a low oxygen curing / cooling processing station according to the embodiment of the present invention.

FIG. 11 is a sectional view of the low-oxygen curing / cooling processing station shown in FIG. 11;

FIG. 12 is a processing flowchart of the SOD system shown in FIG. 1;

FIG. 13 shows the results of an experiment performed to confirm the effects of the present invention.

FIG. 14 is a cross-sectional view of a heat treatment chamber in the low-oxygen cure / cool treatment station shown in FIG.

FIG. 15 is a sectional view showing another embodiment of the heat treatment chamber.

FIG. 16 is a sectional view showing still another embodiment of the heat treatment chamber.

FIG. 17 is a plan view showing still another embodiment of the heat treatment chamber.

18 is a cross-sectional view of the heat treatment chamber shown in FIG.

FIG. 19 is a plan view showing another embodiment of the heat treatment chamber.

20 is a cross-sectional view of the heat treatment chamber shown in FIG.

FIG. 21 is a plan view showing still another embodiment of the heat treatment chamber.

FIG. 22 is a flowchart showing another processing procedure in the heat treatment chamber.

FIG. 23 is a flowchart showing another processing procedure in the heat treatment chamber.

FIG. 24 is a flowchart showing still another processing procedure in the heating processing chamber.

[Explanation of symbols]

 22 Main wafer transfer mechanism 32 Cooling plate 51, 251 Proximity sheet 52, 252 Proximity pin 61, 132, 232, 343 Hot plate W Wafer CPL Cooling processing station SCT SOD coating processing station DAC Aging processing station DSE Solvent exchange processing station LHP Low temperature heat treatment station OHP Low oxygen high temperature heat treatment station DCC Low oxygen cure / cooling treatment station TCP Delivery / cooling plate

Claims (18)

[Claims] A processing chamber for heating a substrate having a first surface and a second surface; a hot plate disposed in the processing chamber and heating the substrate from the second surface side; A gap forming member that maintains a predetermined gap between the surface of the hot plate and the second surface of the substrate; and a gap forming member that is disposed around the hot plate, and on the hot plate via the gap forming member. A substrate processing apparatus, comprising: a first supply unit that supplies a gas for purging to a first surface and a second surface of a substrate substantially parallel to an arranged substrate. 2. The substrate processing apparatus according to claim 1, wherein the purge gas is N ₂ gas. 3. The substrate processing apparatus according to claim 1, further comprising: a second supply unit configured to supply a purge gas from a surface of the hot plate toward a second surface of the substrate. Characteristic substrate processing equipment. 4. The substrate processing apparatus according to claim 1, further comprising an exhaust unit that exhausts the inside of the processing chamber. 5. The substrate processing apparatus according to claim 4, wherein the exhaust unit is disposed above the hot plate. 6. The substrate processing apparatus according to claim 4, wherein the exhaust unit is disposed on a surface of the hot plate. 7. The substrate processing apparatus according to claim 1, wherein the first supply unit is disposed on one side of the hot plate, and the apparatus includes an exhaust unit disposed on the other side of the hot plate. A substrate processing apparatus, comprising: 8. The substrate processing apparatus according to claim 7, wherein the exhaust unit evacuates substantially parallel to the substrate disposed on the hot plate and from the first surface and the second surface of the substrate. A substrate processing apparatus, comprising: 9. The substrate processing apparatus according to claim 1, wherein: means for detecting an oxygen concentration in the processing chamber; and a gas for purging by the first supply unit based on the detected oxygen concentration. A substrate processing apparatus, further comprising: means for controlling the supply of the substrate. 10. The substrate processing apparatus according to claim 1, wherein the first supply unit supplies the gas for purging such that an air volume on a second surface is larger than that on the first surface. A substrate processing apparatus characterized by supplying. 11. The substrate processing apparatus according to claim 1, wherein the purge gas is supplied at a first air volume, and then the purge gas is supplied at a second air volume smaller than the first air volume. The substrate processing apparatus further comprises means for controlling supply of a gas for purging by the first supply unit so as to supply the gas. 12. The substrate processing apparatus according to claim 1, wherein an elevating mechanism for elevating the substrate on the hot plate, an exhaust unit for exhausting the inside of the processing chamber, and a substrate from the hot plate by the elevating mechanism. In the state where the pressure is ascending, starting the evacuation of the processing chamber by the evacuation unit, and terminating the evacuation of the processing chamber by the evacuation unit when the substrate is lowered onto the hot plate by the elevating mechanism. Characteristic substrate processing equipment. 13. A plurality of types of processing stations including a plate for heating or cooling a substrate, and a gap forming member for holding the substrate apart from the plate, and transfer of the substrate between the processing stations. And a transfer device that performs a heat treatment of the substrate in an atmosphere in which the oxygen concentration is reduced, among the plurality of types of processing stations, includes a gap forming member that is higher than other processing stations. A substrate processing apparatus. 14. The substrate processing apparatus according to claim 13, wherein the first substrate is disposed around the plate and substantially parallel to a substrate disposed on the plate via the gap forming member. A substrate supply apparatus for supplying a purge gas to the first surface and the second surface. 15. The substrate processing apparatus according to claim 13, wherein the processing station that heats the substrate in an atmosphere having a reduced oxygen concentration has a gap that is approximately twice as high as other processing stations. A substrate processing apparatus comprising a member. 16. The substrate processing apparatus according to claim 13, wherein the processing station for heating the substrate in an atmosphere having a reduced oxygen concentration includes a gap forming member having a height of approximately 0.1 mm to 0.2 mm. A substrate processing apparatus, comprising: 17. An application processing station for applying an insulating film material to a substrate, an aging processing station for performing an aging process on the substrate coated with the insulating film material, and a solvent exchange process for performing a solvent exchange process on the aged substrate. A low-temperature heat treatment station for performing low-temperature heat treatment on the substrate subjected to the solvent exchange treatment; a low-oxygen high-temperature heat treatment station for performing high-temperature heat treatment on the low-temperature heat-treated substrate under low oxygen; A low-oxygen curing / cooling processing station for curing / cooling the processed substrate under low oxygen; and a transport device for transporting the substrate between these stations are integrally provided, at least the aging processing station, and the low-temperature heating. Processing station And the low-oxygen cure / cooling station includes a plate for heat-treating the substrate, and a gap forming member for holding the substrate away from the plate, respectively, wherein the low-temperature heat treatment station or the low-oxygen cure The height of the gap forming member of the cooling processing station is
A substrate processing apparatus, wherein the height is higher than a height of a gap forming member of another processing station. 18. The substrate processing apparatus according to claim 17, wherein the first cooling processing station cools the substrate before applying the insulating film material to the substrate, and cools the low-oxygen cured / cooled substrate. And a second cooling processing station for processing, wherein the first and second cooling processing stations are for heating or cooling the substrate and for holding the substrate at a distance from the plate. And a gap forming member.