JP2001351907A - Thermal treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thermal treatment apparatus capable of thermally treating a substrate uniformly inside its surface. SOLUTION: A thermal treatment apparatus 68 is equipped with a hot platen 67, which heats a wafer W, keeping it horizontal in position and a lid 63, which forms a space S serving as a treating chamber that processes the wafer W. The lid 63 is made of SUS, and an annular black body 70 is disposed on the center of the lid 63, so as to surround an exhaust vent 69 provided at the center of the lid 63.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to the technical field of a heat treatment apparatus for heating a substrate such as a semiconductor wafer.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
For example, SOD (Spin on Dielectric)
c) An interlayer insulating film is formed by the system. This S
In the OD system, a coating film is spin-coated on a wafer and subjected to a chemical treatment or a heat treatment to form an interlayer insulating film.

For example, when an interlayer insulating film is formed by a sol-gel method, first, an insulating film material, for example, a colloid of TEOS (tetraethoxysilane) is coated on a semiconductor wafer (hereinafter, referred to as "wafer") with an organic solvent. Is supplied. Next, the wafer supplied with the solution is subjected to a gelling process, and then the solvent is replaced. Then, the wafer in which the solvent has been replaced is heated.

[0004] In these series of steps, various heat treatments are performed. Generally, such heat treatment is performed by placing the wafer on a hot plate for heating the wafer, but if the wafer is directly placed on the hot plate, the wafer is adversely affected by static electricity. A gap forming member is arranged on the hot plate, and the wafer is heated while forming a gap between the wafer and the hot plate.

[0005] In the heat treatment, when the wafer in which the solvent is replaced is subjected to heat treatment at a high temperature, the treatment is carried out in a low oxygen atmosphere from the viewpoint of preventing oxidation. Such a low oxygen atmosphere is formed, for example, by carrying a wafer into the processing chamber and then replacing the processing chamber with N ₂ gas.

[0006]

However, N₂To
When the heat treatment is performed while supplying into the processing chamber, N₂Gas flow
Depending on the condition, the heating temperature applied to the wafer
There was a problem of becoming. Specifically, for example,
If the exhaust port is located at the top center of the processing chamber, N ₂gas
Flows from the periphery of the wafer toward the center of the wafer,
The wafer is discharged out of the processing chamber through the exhaust port at the center
You. In the case of such an airflow, it passes over the heated wafer
The heated gas collects in the center of the wafer and is outside the processing chamber.
The heating plate is uniformly heated in the plane
Temperature near the center of the wafer
The temperature becomes higher than the surrounding temperature, and the heating
Sticking had occurred.

An object of the present invention has been made in view of such a problem, and an object of the present invention is to provide a heat treatment apparatus capable of uniformly performing in-plane heat treatment on a substrate.

[0008]

In order to solve the above-mentioned problems, a heat treatment apparatus according to the present invention comprises a hot plate on which a substrate is placed, and a heating plate for heating the placed substrate; A top plate disposed so as to face the surface, wherein a surface of the top plate facing the substrate has at least a first region and a second region having different colors in the surface. I do.

According to this structure of the present invention, the ratio of absorption of radiant heat emitted from the substrate is changed by making the first region and the second region different in color, thereby changing the ratio of absorption of radiant heat from the substrate. From the substrate can be varied in the plane of the substrate. Therefore, in a heat treatment apparatus having a top plate whose colors do not differ in a plane, when the heating distribution of the substrate is non-uniform, the color distribution of the top plate is made different according to the non-uniform heating distribution, so that the The heat treatment can be uniformed in the plane.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the basic principle of a heat treatment apparatus according to the present invention will be described with reference to FIG. 15 by taking a heat treatment apparatus in which an exhaust port is located in the upper part of the center of a wafer as an example. explain.

[0011] The heat treatment apparatus 68 includes a wafer as a substrate.
W is the proximity sheet 51 and proximity pin
For example, there is a built-in heater 67a held through the
A hot plate 67 made of Lamix, and above the hot plate 67
The hot plate 67 is formed so as to form a space S forming a processing chamber.
It is in close contact with the peripheral portion via the sealing member 62,
A lid 63 serving as a top plate which comes into contact with and separates from the plate 67;
7 so as to surround the wafer placed on
N with supply port formed₂The gas supply path 64 and the lid 63
An exhaust path 65 having an exhaust port 69 formed in the center thereof;
3 lifts which raise and lower the wafer W between
And a lowering pin 66. The lid 63 includes a lifting pin 81
It is set to be able to move up and down in conjunction with raising and lowering. The lid 63
The wafer W is made of SUS (stainless steel).
Are opposite to each other in the first region A and the second region A, which have different colors.
And an area B. The first area A is an exhaust port 6
Area close to 9, in other words N₂Near the downstream of the gas flow
And the second region B is a region outside the first region A. This
Here, the first area A is a ring-shaped area surrounding the exhaust port 69.
In this region, for example, the ceramic of the black body 70 is
Coated and arranged. The second area B updates the first area A.
This area is exposed by SUS.
It is in a state of being left. Heat treatment equipment with such a structure
In the N ₂N supplied from the gas supply path 64₂gas
From the periphery of the wafer W as indicated by the arrow.
Flows toward the center of Eha W and converges at the center of wafer W
Then, it is discharged out of the processing chamber through the exhaust port 65.

In the heat treatment apparatus, the thermal radiation energy emitted from the wafer W heated by the hot plate 67 reaches the lid 63, a part of which is absorbed, and the rest is reflected back to the wafer W, where it is reflected. Absorption and reflection are performed again,
Such an operation is repeated. Therefore, when the total energy emitted from a unit area of the wafer W and Q _1, which is equal to the sum of the irradiance E1 and reflected energy of the wafer W.
This reflected energy is the total energy Q ₂ released from the lid
Equal to the multiplied reflectance r ₁ in. here,

[0013]

(Equation 1)

Since there is a relationship of

[0015]

(Equation 2)

## EQU1 ## Similarly, for the lid 63, the lid 6
Assuming that the total energy emitted from the unit area of No. 3 is Q ₂ , the emissivity is E ₂ , the reflectivity is r _2, and the emissivity ε ₂ ,

[0017]

(Equation 3)

## EQU1 ## Therefore, the temperature _{T 1} of the wafer W,
To become higher than the temperature T ₂ of the lid 63, heat Q per unit area transmitted by radiation from the wafer W that generally found in the lid 63,

[0019]

(Equation 4)

In order to uniformly heat the wafer W in the plane, the value of the heat quantity Q may be made uniform in the plane.

Here, in the conventional heating device in which the black body 70 is not disposed, as described above, even if the hot plate is heated with a uniform temperature distribution in the plane, the wafer W to be actually applied is heated. In the in-plane temperature distribution, the central portion of the wafer W substantially corresponding to the exhaust port 69 has a higher temperature than the peripheral portion of the wafer W. This is due to the gas flow of the gas flowing in the processing chamber, which has a structure in which the heated gas passing over the heated wafer is collected at the central portion of the wafer and discharged.

Therefore, in the present invention, in order to make the value of the heat quantity Q uniform within the surface of the wafer W, the inner surface of the lid facing the surface of the wafer W is made to have a structure in which the reflectance is partially different. In addition, the thermal emissivity of the wafer W in the conventional overheated region was increased. Specifically, in order to make the inner surface of the lid facing the wafer W partially different in heat reflectance, in other words, to have a structure in which the heat absorption rate is partially different, the processing chamber facing the wafer W Are different in color distribution in the plane of the figure. That is, a color having a higher heat absorption rate is arranged in a region in which the heat absorption rate is to be increased, than in a region in which the heat absorption rate is to be decreased. For example, in the case of the processing apparatus in which the exhaust port described here is located at the center of the lid, the area where the heat absorption rate is desired to correspond to the first area, and the area where the heat absorption rate is desired to correspond to the second area. I do. In other words, on the inner surface of the lid facing the wafer W, only the vicinity of the exhaust port is partially provided with a black body ceramic having a high heat absorption coefficient to reduce the reflectance, and nothing is arranged in other areas. The SUS having a lower heat absorption than the black body is exposed, and the reflectance is relatively increased. Note that the first region may be colored with red, blue, green, or the like instead of the black body, and a color higher than the heat absorption rate of SUS may be provided.

Here, the apparatus having the exhaust port above the wafer W has been described as an example, but the position of the exhaust port is not limited to this. That is, the color distribution on the inner surface of the lid facing the wafer W may be adjusted according to the gas flow state of the gas flowing in the apparatus.

Next, an embodiment of the present invention will be described with reference to the drawings, taking an SOD system incorporating a heat treatment apparatus as an embodiment of the present invention as an example.

FIGS. 1 to 3 show the overall structure of an SOD system incorporating a heat treatment apparatus according to an embodiment of the present invention. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. Is a rear view.

In the SOD system 1, a plurality of, for example, 25, semiconductor wafers (hereinafter, referred to as wafers) W as substrates are carried into or out of the system in units of, for example, 25 wafer cassettes CR. A cassette block 10 for loading / unloading wafers W from / to the CR and various single-wafer processing stations for performing predetermined processing on the wafers W one by one in the SOD coating process are arranged at predetermined positions in multiple stages. Processing block 11
And a cabinet 12 in which an ammonia water bottle, a bubbler, a drain bottle, and the like required in the aging step are installed.

In the cassette block 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, up to four wafer cassettes CR are provided at the positions of the projections 20 a on the cassette mounting table 20 with their respective wafer entrances facing the processing block 11. A wafer carrier 21 which is placed in a row in the direction and is movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z vertical direction) of the wafers stored in the wafer cassette CR is selectively provided in each wafer cassette CR. Is to be accessed. Further, the wafer transfer body 21 is configured to be rotatable in the θ direction.
The transfer / cooling plate (TCP) belonging to the multistage station section of the third set G3 on the side is also accessible.

In the processing block 11, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 22 is provided at the center, and all the processing stations are surrounded by one or more sets in a multi-stage manner. Are located in In this example,
This is a multi-stage arrangement of four sets G1, G2, G3, G4. The multi-stage stations of the first and second sets G1, G2 are juxtaposed on the front side of the system (in FIG.
The third multi-stage station is arranged adjacent to the cassette block 10, and the fourth multi-stage station of the set G4 is arranged adjacent to the cabinet 12.

As shown in FIG. 2, in the first set G1, a wafer W is placed on a spin chuck in a cup CP to supply an insulating film material, and the wafer is rotated to form a uniform insulating film on the wafer. A SOD coating processing station (SCT) for coating, and a wafer W is placed on a spin chuck in a cup CP to supply a chemical solution for exchange such as HMDS and heptane, and a solvent in an insulating film applied on the wafer is dried before a drying step. In addition, a solvent exchange processing station (DSE) for performing a process of replacing with another solvent is superposed in two stages from the bottom.

In the second set G2, an SOD coating processing station (SCT) is arranged in the upper stage. Note that an SOD coating processing station (SCT), a solvent exchange processing station (DSE), and the like can be arranged below the second set G2 as needed.

As shown in FIG. 3, in the third set G3, 2
Low heat treatment station (OHP), low heat treatment station (LHP), two cooling treatment stations (CPL), and a transfer / cooling plate (TC
P) and cooling processing stations (CPL) are arranged in multiple stages in order from the top. Here, the low-oxygen high-temperature heating processing station (OHP) has a hot plate on which the wafer W is placed in a process chamber capable of being sealed, and discharges N ₂ uniformly from a hole on the outer periphery of the hot plate. Air is exhausted from the upper center, and the wafer W is subjected to high-temperature heat treatment in a low oxygen atmosphere. The low-temperature heat processing station (LHP) has a hot plate on which the wafer W is placed, and heat-processes the wafer W at a low temperature. The cooling processing station (CPL) has a cooling plate on which the wafer W is placed, and cools the wafer W. Delivery / cooling plate (TC
P) has a two-stage structure having a cooling plate for cooling the wafer W in the lower stage and a transfer table in the upper stage, and transfers the wafer W between the cassette block 10 and the processing block 11.

In the fourth set G4, a low-temperature heating processing station (LHP), two low-oxygen curing / cooling processing stations (DCC), and an aging processing station (D
AC) are arranged in multiple stages from the top. here,
The low oxygen curing / cooling processing station (DCC) has a hot plate and a cooling plate adjacent to each other in a process chamber that can be sealed, and performs high temperature heat treatment and heat treatment in a N ₂ -substituted low oxygen atmosphere. The cooled wafer W is subjected to a cooling process. The aging processing station (DAC) introduces NH ₃ + H ₂ O into a process chamber capable of being sealed, performs aging processing on the wafer W, and wet-gels the insulating film material film on the wafer W.

FIG. 4 is a perspective view showing the appearance of the main wafer transfer mechanism 22. The main wafer transfer mechanism 22 has a cylindrical support comprising a pair of opposed walls 25 and 26 connected to each other at an upper end and a lower end. A wafer transfer device 30 is provided inside the body 27 so as to be able to move up and down in the vertical direction (Z direction). The cylindrical support 27 is connected to a rotation shaft of a motor 31, and is rotated integrally with the wafer transfer device 30 about the rotation shaft by the rotation driving force of the motor 31. Therefore, the wafer transfer device 30 is rotatable in the θ direction. For example, three tweezers are provided on the transfer base 40 of the wafer transfer device 30. These tweezers 4
1, 42 and 43 are both wall portions 2 of the cylindrical support 27.
It has a form and size that allow it to pass through the side opening 44 between 5 and 26, and is configured to be able to move back and forth along the X direction. Then, the main wafer transfer mechanism 22
The tweezers 41, 42, and 43 access processing stations disposed therearound and transfer wafers W to and from these processing stations.

In the present embodiment, the heat treatment apparatus as one embodiment of the present invention is applied to a DCC heat treatment chamber, and will be described below with reference to FIGS. still,
The heat treatment apparatus used here has the same basic structure as the heat treatment apparatus used in describing the above-described basic principle, except for the structure for forming a processing space that is a closed space.

FIG. 5 is a plan view of the above-described low oxygen curing / cooling processing station (DCC), and FIG. 6 is a sectional view thereof. FIG. 7 is a plan view of the top plate, and FIG. 8 is a partial cross-sectional view of the heat treatment chamber for describing a gas flow in the heat treatment chamber. FIG. 9 shows a temperature distribution on a straight line passing through the center of each of the hot plate, the wafer, and the top plate during the heat treatment. FIG. 10 is a plan view of the hot plate showing positions of hot wires incorporated in the hot plate.

Low oxygen cure / cooling station (D
CC) includes a heat treatment chamber 341 and a cooling treatment chamber 342 provided adjacent to the heat treatment chamber 341. The heat treatment chamber 341 has a heat treatment temperature that can be set to 200 to 470 ° C. It has a plate 343. The low-oxygen curing / cooling processing station (DCC) further includes a first gate shutter 344 that opens and closes when transferring the wafer W to and from the main wafer transfer mechanism 22, a heating processing chamber 341 and a cooling processing chamber 342. Gate shutter 345 for opening and closing between the first and second shutters 345 and the ring shutter 3 raised and lowered together with the second gate shutter 345 for forming a space S to be a processing chamber while surrounding the wafer W around the hot plate 343.
46. Further, the heating plate 343 is provided with three lift pins 347 for placing and moving the wafer W up and down. Note that a shielding screen may be provided between the hot plate 343 and the ring shutter 346.

An elevating mechanism 348 for elevating and lowering the three lift pins 347 is provided below the heat treatment chamber 341.
The ring shutter 346 is connected to the second gate shutter 34.
5 and a lifting mechanism 350 for lifting and lowering the first gate shutter 344 to open and close it.

N ₂ gas is supplied into the heat treatment chamber 341 from the inside of the ring shutter 346 as a purge gas. An exhaust port 60 is opened in the top plate 50 located above the heat treatment chamber 341, and an exhaust pipe 351 is connected to the exhaust port 60. By exhausting this gas while supplying the N ₂ gas into the processing chamber, the inside of the heat processing chamber 341 is maintained at a low oxygen concentration (for example, 50 ppm or less) atmosphere. The N ₂ gas, as shown by the arrow in FIG.
It flows from the peripheral portion of the wafer W toward the central portion of the wafer W, is converged at the central portion, rises, and is discharged out of the heat treatment chamber 341 through the exhaust port 60.

The top plate 50 is made of silver SUS,
The surface of the top plate 50 facing the wafer W includes a first area A near the exhaust port 60 and a second area B other than the first area A. The first region A corresponds to a ring-shaped region surrounding the exhaust port 60, and the ceramic of the black body 61 is disposed in the first region A. The second region B is a region further surrounding the first region A, and is in a state where the SUS is exposed and has a silver color. As a result, the thermal emissivity of the wafer W corresponding to the first region A where the black body 61 is arranged is SUS
Wafer W corresponding to the exposed second region B
Relatively high compared to the part. Here, the black body 61
Is not arranged, the wafer W tends to have a high temperature at the center of the wafer W corresponding to the vicinity of the exhaust port 60.
Therefore, by increasing the thermal emissivity at the central portion of the wafer W as in the present embodiment, even when the heated N ₂ gas is collected at the central portion of the wafer W, the N ₂ gas is transmitted from the wafer W to the top plate 50 by radiation. The amount of heat Q can be made uniform in the surface of the wafer W, and the wafer W can be subjected to a heat treatment without unevenness in the surface.

In this embodiment, the hot plate 343
Has a structure in which heaters 330 are concentrically assembled as shown in FIG. In the present embodiment, the heating plate 343 is adjusted so as to be in a uniform heating state in the plane, but the heater 330 has a structure capable of adjusting the heat for each concentric circle.
The temperature of the heater 330 corresponding to the center of the wafer W may be adjusted, and the temperature of the heater 330 may be adjusted in part by adjusting the temperature of the heater W in addition to the arrangement of the black body. Can be expanded.

The heating chamber 341 and the cooling chamber 342
Is communicated through the communication port 352 with the wafer W
A cooling plate 353 for mounting and cooling is mounted so as to be movable in the horizontal direction by a moving mechanism 355 along a guide plate 354. Thereby, the cooling plate 353 is
The wafer W which can enter the heat treatment chamber 341 through the communication port 352 and is heated by the hot plate 343 in the heat treatment chamber 341 is received from the lift pins 347 and is carried into the cooling treatment chamber 342. After cooling the wafer W, the wafer W is returned to the lift pins 347.

The set temperature of the cooling plate 353 is, for example, 15 to 25 ° C., and the applicable temperature range of the wafer W to be cooled is, for example, 200 to 470 ° C.

Further, the cooling processing chamber 342 is provided with a supply pipe 35.
6, and an inert gas such as N ₂ is supplied to the inside through the exhaust pipe 6 and further exhausted to the outside through an exhaust pipe 357. This allows
Similarly to the heat treatment chamber 341, the inside of the cooling treatment chamber 342 is maintained at a low oxygen concentration (for example, 50 ppm or less) atmosphere.

On the hot plate 343, for example, 0.2 mm
, A proximity sheet 251 and a proximity pin 252, and a guide 253 are provided. As a result, the wafer W is disposed on the hot plate via the proximity sheet and the proximity pins, and the air containing oxygen remains in the gap between the wafer W and the hot plate 343 when the wafer W is replaced with the N ₂ gas. The time required for setting the inside of the heat treatment chamber 341 to a desired low oxygen atmosphere can be shortened, and heat treatment under low oxygen can be performed in a short time.

The operation in the heat treatment chamber 341 is performed as follows. First, with the lift pin 347 raised,
The wafer W is transferred from the main wafer transfer mechanism 22 onto the lift pins 347. Thereafter, the first and second gate shutters 344, 345 are closed. N ₂ gas from the N ₂ gas supply source into the heat treatment chamber 341 is supplied upward from the periphery of the hot plate 343, is further heat processing chamber 341 is exhausted through the exhaust pipe 351. At this stage, 30
A large amount of N ₂ gas of about 1 / min is supplied. This allows
The air remaining in the heat treatment chamber 341 is pushed out from the exhaust pipe 351 and the purging proceeds rapidly.

From such a state, the lift pins 347 are lowered, and the wafer W is placed on the hot plate 343 via the proximity sheet and the proximity pins.

[0047] Thereafter, when the oxygen concentration in the processing chamber is stabilized below a predetermined value, the diaphragm supply of N ₂ gas in a small amount of about 10l / min continues to be subsequently supplied N ₂ gas by this amount.
In such a state where the supply of the N ₂ gas is continued, the wafer W
Is heated. At the time of this heat treatment, as shown in FIG. 9, the hot plate is uniformly heated to 140 ° C. in the plane. The wafer W is uniformly heated to 140 ° C. in the plane. The top plate has a black body at the center, so it has a temperature distribution such that the temperature increases from the end to the center, with 90 ° C near the center and 70 ° C near the periphery. . Here, although not shown, in the case of the conventional apparatus structure in which the black body is not arranged, the top plate has a substantially uniform temperature distribution in the plane, and the temperature of the wafer W increases from the end to the center. Temperature distribution. In the present embodiment,
In addition to the conventional structure, by providing a black body on a part of the top plate so as to increase the thermal emissivity at the center of the wafer W, the wafer W can be uniformly heated in the plane.

In the above-described embodiment, the first region A is in a state where a single black color is applied, but the color is changed from gray to black gradually or stepwise from the peripheral portion toward the center portion. May be coated with a color. Further, the second region B may be provided with such a color gradation, and the coloring distribution can be appropriately adjusted according to the in-plane heating distribution on the wafer W. Further, a plurality of ring-shaped black bodies having different widths can be arranged concentrically in the first region A, whereby the heat radiation characteristic distribution of the wafer W corresponding to the first region A can be reduced. It can be different within.

The first region A is not limited to a black body, but may be colored red, green, or blue, and has a higher heat absorption rate than the color of the second region B where SUS is exposed. I just want to make it a coloring.

In the above embodiment, the top plate 5
As 0, one having a shape in which one opening is provided as an exhaust port 60 in the center is used. However, as shown in FIG. The provided shape can also be used. In this case, the central portion of the top plate 150 provided with the exhaust port 160 corresponds to the first region A, and the other region corresponds to the second region B. In this case, for example, the top plate 150 is SUS
In this case, the black body 161 may be arranged in a circle in the first area A, and the SUS may be exposed in the second area.

As shown in FIG. 12, the top plate 250 is formed of SUS, and the first region A near the exhaust port 260 is formed of SU.
S may be exposed, and the mirror 261 may be disposed in the second area B further surrounding the first area A. Thereby, the heat absorption rate in the first area A can be made relatively higher than the heat absorption rate in the second area.

In the above embodiment, the case where the exhaust port is located above the wafer W has been described as an example. However, as shown in FIGS. 13 and 14, the exhaust port is located on the side of the heat treatment apparatus. The present invention can also be applied to the case where the position is located at. FIG. 13 is a schematic sectional view of the heat treatment apparatus. FIG. 14 is a schematic plan view of the heat treatment apparatus,
It is a figure explaining the inner surface state of a lid, and the position of a gas supply port and a discharge port. In each figure, the gas flow state of the gas flowing in the apparatus is illustrated by arrows.

As shown in the figure, the heat treatment device 441 comprises:
A heating plate 467 with a built-in heater for holding the wafer W via the proximity sheet 4451 and the proximity pins 452, and a space S forming a processing chamber above the heating plate 467.
A lid 450 as a top plate arranged to form
3 for raising and lowering the wafer W between the hot plate 61 and a position above the hot plate 61
And a lifting pin 66 of a book. A supply port 452 for supplying N ₂ gas into the processing chamber is provided on one side of the lid 450, and a side facing the one side of the lid 450 is provided with a supply port 452.
An exhaust port 451 is provided opposite to the supply port 452 via the wafer W.

In such a structure, the gas flowing in the heat treatment device 441 flows on the wafer W from one end to the other end of the wafer, as indicated by an arrow. Therefore, the gas near the other end is heated while passing over the wafer, and thus has a higher temperature than the gas near the one end. For this reason, the heating temperature unevenness of the wafer W occurs near the downstream and upstream of the gas.

In the present embodiment, in order to prevent the occurrence of such uneven heating temperature, the first region A corresponding to the vicinity of the gas downstream of the lid and the other region B are colored differently. Specifically, the lid 450 is formed of SUS,
The surface facing the wafer W of 0 is composed of a first region A and a second region B having different colors from each other. The first area A is an area corresponding to the vicinity of the exhaust port 451, in other words, the area near the downstream of the gas. In this area, a ceramic black body 453 is applied and arranged. On the other hand, the second area B
Is in a state where SUS is exposed,
The emissivity is higher than the area. With such a structure, the radiation characteristics of the wafer W near the exhaust port can be made relatively higher than in other regions, and the heat treatment in the plane of the wafer W can be performed uniformly.

The present invention is not limited to the above-described embodiment, but can be variously modified. For example, the substrate to be processed is not limited to a semiconductor wafer, but may be another substrate such as an LCD substrate. The present invention is applicable to a heat treatment apparatus that heats a substrate in a state in which a gas flows in a processing chamber. The color distribution of the inner surface of the processing chamber facing the wafer W may be adjusted according to the gas flow state of the gas flowing in the chamber.

[0057]

As described above, according to the present invention,
A heat treatment can be performed on the substrate uniformly in the plane.

[Brief description of the drawings]

FIG. 1 is a plan view of an SOD system according to an embodiment of the present invention.

FIG. 2 is a front view of the SOD system shown in FIG.

FIG. 3 is a rear view of the SOD system shown in FIG. 1;

FIG. 4 is a perspective view of a main wafer transfer mechanism in the SOD system shown in FIG.

FIG. 5 is a plan view of a low-oxygen curing / cooling processing station according to the embodiment of the present invention.

6 is a sectional view of the low-oxygen curing / cooling processing station shown in FIG.

FIG. 7 is a plan view of a top plate arranged in a heat treatment chamber constituting a part of the low oxygen curing / cooling treatment station shown in FIG.

FIG. 8 is a schematic cross-sectional view of a heat treatment chamber constituting a part of the low-oxygen cure / cool treatment station shown in FIG.

FIG. 9 is a diagram showing an in-plane temperature distribution of a hot plate, a wafer, and a top plate during a heat treatment in a heat treatment chamber constituting a part of the low oxygen curing / cooling station shown in FIG. 6;

FIG. 10 is a schematic plan view of a hot plate disposed in a heat treatment chamber constituting a part of the low oxygen curing / cooling treatment station shown in FIG.

FIG. 11 is a schematic plan view of a top plate according to another embodiment.

FIG. 12 is a schematic plan view of a top plate in still another embodiment.

FIG. 13 is a schematic sectional view of a heat treatment apparatus according to still another embodiment.

FIG. 14 is a schematic plan view of the heat treatment apparatus shown in FIG. 13 and is a view for explaining a structure of a lid and a flow of gas in the apparatus.

FIG. 15 is a schematic sectional view of a heat treatment apparatus for explaining a basic principle of the present invention.

[Explanation of symbols]

 50, 150, 250 ... top plate 60, 69, 161, 260, 451 ... exhaust port 61, 70, 161, 453 ... black body 63, 450 ... lid 64 ... supply path 67a, 330 ... heater 68, 441 ... heat treatment Apparatus 261 Mirror 341 Heat treatment chamber 452 Supply port W Wafer A First area B Second area S Space for forming processing chamber

Claims (11)

[Claims] A hot plate on which a substrate is placed, and a heating plate for heat-treating the placed substrate; and a top plate arranged so as to face a substrate placement surface of the hot plate. A heat treatment apparatus, wherein a surface facing the substrate has at least a first region and a second region having different colors in the surface. 2. A processing chamber for forming a closed space for heat-treating a substrate between the hot plate and the top plate, a supply unit for supplying gas into the processing chamber, and the gas The heat treatment apparatus according to claim 1, further comprising an exhaust port for exhausting the gas to the outside of the processing chamber, wherein the first region is located near the exhaust port. 3. The exhaust port is arranged to have an opening substantially at the center of the top plate, the first area is an area surrounding the exhaust port, and the second area is an area surrounding the exhaust port.
The heat treatment apparatus according to claim 2, wherein the region is a region further surrounding the first region. 4. The exhaust port is disposed with a plurality of openings substantially in the center of the top plate, the first region corresponds to the center, and the second region corresponds to the first region. 3. The heat treatment apparatus according to claim 2, wherein the heat treatment apparatus corresponds to a surrounding area. 5. The heating plate according to claim 3, wherein a heater is incorporated concentrically into the heating plate.
The heat treatment apparatus as described in the above. 6. The superheater according to claim 2, wherein the exhaust port is disposed with an opening on a side surface of the processing chamber, and the first region is a region near the side surface. 7. A supply unit for supplying a gas into the processing chamber, and an exhaust port for exhausting the gas to the outside of the processing chamber, wherein the first region is provided for the gas flowing in the processing chamber. The heat treatment apparatus according to claim 1, wherein the heat treatment apparatus is located near a downstream. 8. The heat absorption rate of the surface in the first area is larger than the heat absorption rate of the surface in the second area. Heat treatment equipment. 9. The heat treatment apparatus according to claim 1, wherein the top plate is made of SUS, and a black body is arranged in the first region. 10. The heat treatment apparatus according to claim 9, wherein the black body is made of ceramic. 11. The top plate is made of SUS and the second plate is made of SUS.
9. The heat treatment apparatus according to claim 1, wherein a mirror is arranged in the region.