CN106409670A - Substrate processing apparatus, substrate processing method and maintenance method of substrate processing apparatus - Google Patents

Substrate processing apparatus, substrate processing method and maintenance method of substrate processing apparatus Download PDF

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Publication number
CN106409670A
CN106409670A CN201610597359.0A CN201610597359A CN106409670A CN 106409670 A CN106409670 A CN 106409670A CN 201610597359 A CN201610597359 A CN 201610597359A CN 106409670 A CN106409670 A CN 106409670A
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Prior art keywords
substrate
thermocatalyst
process container
exhaust pathway
board treatment
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CN201610597359.0A
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CN106409670B (en
Inventor
牟田行志
守屋刚
森拓也
竹下和宏
江崎智规
水永耕市
田中雅山
金川耕三
中野圭悟
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60105—Applying energy, e.g. for the soldering or alloying process using electromagnetic radiation
    • H01L2021/6012—Incoherent radiation, e.g. polychromatic heating lamp
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
    • H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere

Abstract

The invention provides a substrate processing apparatus, a substrate processing method and a maintenance method of the substrate processing apparatus. In a process of heating a wafer, a sublimate generated by the processing of the wafer is decomposed and suppressed from being attached to an exhaust passage. Further, processing of heating a wafer W with light from a light source part to remove a sublimate attached to a light transmission window. A thermal catalytic layer is formed on the inner surface of a processing container and heated. Thus, when a sublimate sublimated from a coating film on a wafer W and received within the processing container reaches the vicinity of the thermal catalytic layer, the sublimate is decomposed and removed by the thermal activation of the thermal catalytic layer. In removing a sublimate attached to a light transmission window, a cleaning substrate formed with the thermal catalytic layer on the surface thereof is carried into the processing container and caused to approach the light transmission window. Thereafter, the cleaning substrate is heated so that the sublimate attached to the surface of the light transmission window is removed.

Description

The maintaining method of substrate board treatment, substrate processing method using same and substrate board treatment
Technical field
The present invention relates to substrate-placing to be carried out the substrate of the process of substrate in the process container with exhaust pathway The maintaining method of processing meanss, substrate processing method using same and substrate board treatment.
Background technology
For example in the manufacturing process of the semiconductor device of multilayered wiring structure, carry out in the semiconductor crystal wafer as substrate (hereinafter referred to as " wafer ") upper process forming the coated film such as resist film, antireflection film, then makes to residue in coated film Solvent seasoning, in addition, for cross-linking reaction of promoting cross-linking agent etc., carry out heat treated.As the heating carrying out heat treated Processing meanss, using the heat treated dress of the construction of the heating plate being provided with the mounting table being also used as wafer in process container Put.As the heating part that wafer is heated, being also known to using infrared lamp is the construction that LED light source substitutes heating plate Heating part.
In such heat treatment apparatus, if heating wafer, the organic principle in coated film distils, and therefore, utilizes Air or non-active gas purge in process container, and sublimate is discharged via exhaust pathway together with exhaust stream.For Suppression processes dispersing of the microgranule in atmosphere gas, by wall portion in process container be heated to the sublimation temperature of sublimate with On, therefore, the attachment of sublimate is inhibited.However, for the sublimate being flowed in exhaust pathway, due in exhaust line The reduction of downstream temperature in footpath and sublimate easily separates out, accordingly, it would be desirable to termly be safeguarded.
In addition, in the case that LED light source is used as heating part, being attached to the atmosphere gas in process container by sublimate The light inlet window for example including quartz plate that body and the atmosphere gas for placing light source separate leads to luminance reduction, and needs will fill Put decomposition to be cleaned.In addition, for example to being referred to as SOC (Spin On Cap, coating-type cover) film as etching mask The film of carbon system carry out in the operation of film forming, be known to irradiation UV (ultraviolet) and carry out the operation of the planarization process of film, Same problem is there is also in the case of being somebody's turn to do.
In addition, recorded in patent documentation 1 removing polymer using thermocatalyst.In addition, described in patent documentation 2 Have, using thermocatalyst, resolution process is carried out to plastic composite.However, for the liter that will produce in substrate board treatment The technology that magnificent thing, residue decomposition remove is not on the books.
Prior art literature
Patent documentation
Patent documentation 1：Japanese Unexamined Patent Publication 2014-94464 publication
Patent documentation 2：Japanese Unexamined Patent Publication 2014-177523 publication
Content of the invention
Problems to be solved by the invention
The present invention makes in this context, its object is to provide following technology：While to process container Inside it is exhausted while when substrate is processed, the product generating due to the process of substrate can be decomposed, to suppress raw Become the situation that thing adheres to exhaust pathway.Another object of the present invention is to providing following technology：While in process container It is exhausted while when substrate being processed using the light from light source portion, the process due to substrate being generated and is attached to The product of light inlet window removes.
For solution to problem
The substrate board treatment of the present invention is characterised by, including：
Process container, is internally provided with the mounting portion for loading processed substrate at it；
Exhaust pathway, it is used for the atmosphere gas in described process container are exhausted；
Thermocatalyst material, it is formed at least one of the inner surface of described process container and described exhaust pathway, By thermal activities, decompose the product producing from this processed substrate due to the process of processed substrate by being heated；
The heating part of thermocatalyst, it is used for described thermocatalyst material is heated.
The substrate board treatment of another invention is characterised by, including：
Process container, is internally provided with the mounting portion for loading processed substrate at it；
Substrate heating part, it is used for the processed substrate being placed in described mounting portion is heated；
Exhaust pathway, it is used for the atmosphere gas in described process container are exhausted；
Light source portion, it is used for the substrate irradiation light being placed in described mounting portion；
Light inlet window, it is used for separating the atmosphere gas in described light source portion and process container；
Selector, it is used for selecting service mode；
Control unit, its output control signal, to execute following steps：To have heat to urge when have selected described service mode The step that the maintenance substrate of agent material inputs into described process container, wherein, described thermocatalyst material passes through to be added Heat and by thermal activities and be used for decompose due to substrate process and from substrate generation product be sublimate；Then in order that institute The step stated thermocatalyst material thermal activities and utilize the described maintenance substrate of described substrate heating part heating；In order to adhere to Described sublimate to described light inlet window removes and makes the described maintenance substrate after heating close to the step of described light inlet window.
The substrate processing method using same of the present invention is characterised by, including：
By mounting portion in process container for the processed substrate-placing and the operation that processed；
Operation atmosphere gas in described process container being exhausted via exhaust pathway；
The thermocatalyst material of at least one to the inner surface being arranged at described process container and described exhaust pathway Heated and made its thermal activities, decompose the operation of the product producing from substrate due to the process of processed substrate.
The maintaining method of the substrate board treatment of the present invention is the method safeguarding substrate board treatment,
This substrate board treatment includes：
Process container, is internally provided with the mounting portion for loading processed substrate at it；
Substrate heating part, it is used for the processed substrate being placed in described mounting portion is heated；
Exhaust pathway, it is used for the atmosphere gas in described process container are exhausted；
Light source portion, it is used for the substrate irradiation light being placed in described mounting portion；
Light inlet window, it is used for separating the atmosphere gas in described light source portion and process container,
The maintaining method of this substrate board treatment includes following operation：
The operation that the maintenance substrate with thermocatalyst material is inputted into described process container, wherein, described heat Catalyst material is by heated and by thermal activitiesization and be used for making the process due to substrate and the product from substrate generation is Sublimate decomposes；
Then in order that described thermocatalyst material thermal activities and utilize heating described maintenance in described substrate heating part to use The operation of substrate；
Described sublimate in order to be attached to described light inlet window removes and makes the described maintenance substrate after heating close The operation of described light inlet window.
The effect of invention
According to the present invention, carry out the process of substrate in process container, the atmosphere gas in process container are exhausted When, in the inner surface of process container and at least one setting thermocatalyst material of described exhaust pathway, by thermocatalytic Agent material is heated, and the product producing is decomposed remove in the atmosphere gas in process container.Therefore, it is possible to suppress raw Become the attachment to exhaust pathway for the thing, safeguard frequency therefore, it is possible to reduce.
In addition, in another invention, being exhausted in process container while utilizing the light pair from light source portion When substrate is processed, the maintenance being provided with thermocatalyst material is heated and is made with it near light inlet window with substrate, will be attached The sublimate light inlet window removes, and therefore, does not decompose process container and just can clean light inlet window.
Brief description
Fig. 1 is the axonometric chart representing coating, developing unit.
Fig. 2 is the top view representing coating, developing unit.
Fig. 3 is the longitudinal cross-sectional side view of the heat treatment apparatus representing the 1st embodiment.
Fig. 4 is the explanatory diagram of the effect representing described heat treatment apparatus.
Fig. 5 is the explanatory diagram of the maintaining method of the substrate board treatment representing the present invention.
Fig. 6 is the explanatory diagram of the maintaining method of the substrate board treatment representing the present invention.
Fig. 7 is the longitudinal cross-sectional side view of the heat treatment apparatus representing the 2nd embodiment.
Fig. 8 is the top view of the exhaust pathway representing heat treatment apparatus.
Fig. 9 is top view and the side view of the other examples of the exhaust pathway representing heat treatment apparatus.
Figure 10 is the top view of the other examples of the exhaust pathway representing heat treatment apparatus.
Figure 11 is the longitudinal cross-sectional side view of the planarizer representing the 3rd embodiment.
Figure 12 is the explanatory diagram representing the sublimate producing in planarizer.
Figure 13 is the explanatory diagram of the maintaining method representing planarizer.
Figure 14 is the explanatory diagram of the maintaining method representing planarizer.
Figure 15 is the sectional view of the heat treatment apparatus representing the 4th embodiment.
Figure 16 is the exploded perspective view of the heat treatment apparatus representing the 4th embodiment.
Figure 17 is the axonometric chart of the example of the heating part of representation module body and thermocatalyst.
Figure 18 is to represent the axonometric chart of heat treatment apparatus of the 5th embodiment and the sectional view of thermocatalyst unit.
Figure 19 is the sectional view of the heat treatment apparatus representing the 6th embodiment.
Figure 20 is the top view of the mounting table of heat treatment apparatus representing the 6th embodiment.
Figure 21 is the explanatory diagram representing the heater being provided with pressure at expulsion determination part.
Figure 22 is the performance plot representing the temperature change of mass change and heat in reference example.
Figure 23 is the performance plot representing the temperature change of mass change and heat in comparative example.
Description of reference numerals
1st, heating module；2nd, process container；4th, LED module；5th, thermocatalytic oxidant layer；6th, Clean- substrate；9th, sublimate； 10th, heater；23rd, lifter pin；30th, exhaust pathway；100th, control unit；W, wafer.
Specific embodiment
[the 1st embodiment]
As the substrate board treatment of the 1st embodiment of the present invention, the example being applied to heat treatment apparatus is carried out Explanation.
First, the base plate processing system of the heat treatment apparatus being assembled with the present invention is applied, the entirety of developing unit Simply described.Coating, developing unit are as shown in Figure 1 and Figure 2 like that by supporting region B1, treatment region B2 and switching Area B3 linearly connects and constitutes.It is also associated with exposure station B4 in translation field B3.
Supporting region B1 has from the substrate i.e. conveying appearance of the wafer W of such as diameter 300mm for receiving multiple products Device is the effect that bearing part C (such as FOUP) is with respect to input and output wafer W in device, including the mounting table 101 of bearing part C, Door 102 and the conveying arm 103 for conveying wafer W from bearing part C.
Treatment region B2 be stack gradually from down for wafer W is carried out with liquid process the 1st unit area～the 6th unit area D1～ D6 and constitute, constituent parts area D1～D6 is same structure.Alphabet to constituent parts area D1～D6 mark in FIG Show process classification, BCT represents that antireflection film formation is processed, COT represents to wafer W supply resist and forms the anti-of resist film Erosion agent film formation is processed, and DEV represents development treatment.
Typically represent the structure of unit area D3 in Fig. 2, be provided with unit area D3：Principal arm A3, it is from carrying Area B1 side is moved towards in linear conveyor zones R3 of translation field B3；Coating element 110, it has glass module 111.Separately Outward, it is laminated with heating module and the refrigerating module 1 of the heat treatment apparatus being equivalent to the present invention in shelf unit U1～U6.
It is provided with by the shelf unit of the multiple module compositions being laminated to each other in the supporting region B1 side of conveyor zones R3 U7.The handing-over of the wafer W between conveying arm 103 and principal arm A3 can be by the transfer module of shelf unit U7 and conveying arm 104 Carry out.
Translation field B3 is used for carrying out the handing-over of wafer W between treatment region B2 and exposure station B4, has multiple processing modules Shelf unit U8, U9, the U10 being laminated to each other.Additionally, the reference 105,106 of in figure is namely in shelf list The conveying arm of handing-over that is first between U8, U9, carrying out wafer W between shelf unit U9, U10, the reference 107 of in figure be for Carry out the conveying arm of the handing-over of wafer W between shelf unit U10 and exposure station B4.
The outline of the transport path of the wafer W of the system including coating, developing unit and exposure station B4 is simply entered Row explanation.Wafer W is with the transfer module of bearing part C → conveying arm 103 → shelf unit U7 → conveying arm 104 → shelf unit U7 Transfer module → unit area D1 (D2) → unit area D3 (D4) → translation field B3 → exposure station B4 → translation field B3 → unit area The sequential flowing of transfer module TRS of D5 (D6) → shelf unit U7 → conveying arm 103 → bearing part C.
As shown in Fig. 2 coating, developing unit have control unit 100.Control unit 100 has program storage portion, in program storage Deposit the program that order is enrolled in portion's storage, made with the cleaning implementing conveying processing procedure, each heating module and the refrigerating module of wafer Sequence in industry.
Fig. 3 shows the overall structure of the heat treatment apparatus as heating module.Reference 2 in Fig. 3 is to process Container, this process container 2 includes lower member 25 and cap 22, and this lower member 25 includes the flat cylinder of upper surface open, This cap 22 can move up and down with respect to this lower member 25 and process container 2 is opened and closed, and this process container 2 constitutes and carries out Heating chamber as the heat treated of the wafer W of the diameter 300mm of substrate.
Lower member 25 is supported on the housing (not shown) of the packaging body constituting heat treatment apparatus by supporting member 26 Be equivalent on the base station 27 of bottom surface sections.The LED battle array constituting the light source portion as substrate heating part is provided with lower member 25 Row 41, are provided with for will be used for placing the atmosphere gas of this LED array 41 and process atmosphere gas in the upper side of LED array 41 The light inlet window 42 being for example made up of quartz that body separates.LED array 41 is carried out by such as copper (Cu) plate on its complete cycle Gold-plated reflecting plate 43 surrounds, will towards the direction different from direction of illumination (top in Fig. 3) light reflect so as to Enough radiant light is effectively taken out.In addition, being provided with for so that Clean- substrate described later is close on the surface of light inlet window 42 The state of this light inlet window 42 keeps the jut 44 of Clean- substrate described later.
On the bottom 28 of lower member 25 and light inlet window 42, overlook apparently along their through hole of thickness direction insertion 29 have circumferentially been equally spaced at 3, are accordingly provided with the lifter pin 23 of supporting wafer W with each through hole 29.Rise Fall pin 23 is lifted using the elevating mechanism 24 being arranged on base station 27, is projected, is submerged with the surface with respect to light inlet window 42 Mode arrange, by make wafer W lift, thus for example carrying out wafer W's between the conveying arm A3 in lifter pin 23 and Fig. 2 Handing-over.
Cap 22 includes the flat cylinder of lower surface opening, is configured to be formed as the perisporium with lower member 25 The upper surface (specifically abutting with pin 51 described later) in portion and the down position of the state of sealing treatment container 2 and by crystalline substance Lift between lifting position when circle W is joined with respect to lifter pin 23.In this example embodiment, the lifting action of cap 22 passes through The lifting arm 18 of the outer peripheral face being installed in cap 22 is driven to carry out using the elevating mechanism 19 being arranged at base station 27.
In addition, the upper surface of the surrounding wall portion in lower member 25, being circumferentially spaced and having alternately formed such as height is 1mm Pin 51.Thus, it is formed with the gap of 1mm between cap 22 and lower member 25 when closing cap 22, to process container 2 Inside carry out extraneous gas (being placed with the atmosphere gas of the dust free room of heat treatment apparatus) during aerofluxuss to flow into from gap, processed Form air-flow in container 2.
It is formed with air vent 32, air vent 32 and the exhaust pathway including discharge duct in the central part of the top board of cap 22 The bottom of 30 side connects.Exhaust pathway 30 diametrically linearly stretches out along the upper surface of cap 22, with factory Interior discharge duct connects.
In addition, cladding is formed with the whole internal face of process container 2 for example by Cr2O3The thermocatalyst material constituting The thermocatalytic oxidant layer 5 of (thermocatalyst body).Thermocatalytic oxidant layer 5 is for example on base material using the known bag such as coating, spraying plating Cover the overlay film that maneuver forms thermocatalyst body.It is embedded with for the thermocatalyst in process container 2 in the wall of cap 22 The heating part of the thermocatalyst that layer 5 is heated is heater 10.The caloric value of heater 10 is configured to following temperature, should Temperature makes thermocatalytic oxidant layer 5 thermal activities thus playing thermocatalyst function, that is, playing and make to produce from wafer W and reach this heat and urge The vicinity of agent layer 5 sublimate thermal decomposition function, for example in Cr2O3In the case of become 200 DEG C～400 DEG C.Positioned at cap The exhaust pathway 30 of 22 upper surface is heated into, by heater (not shown), the inadhering temperature of sublimate producing from wafer W.
Record the control unit that heat treatment apparatus are controlled in figure 3, this control unit can be referred to as shown in Fig. 1 A part for control unit, therefore, marks identical reference 100.Control unit 100 shown in Fig. 3 and selection service mode Selector 99 connects, and when have selected service mode, the program for carrying out the maintenance of heat treatment apparatus is started.This selection Portion 99 is for example arranged at the exercisable guidance panel of operator.Control unit 100 is for example based on the fortune being pre-entered into control unit 100 Carryover sequence come to control the lifting action of the lifter pin 23 based on elevating mechanism 24, the irradiation based on LED module 4 intensity adjustment with And opening and closing (the beating opening/closing) action based on LED module 4.
Next, saying to the effect that the substrate board treatment constituting embodiments of the present invention is heat treatment apparatus Bright.First, input wafer W into process container 2 using the principal arm A3 shown in outside conveying arm, such as Fig. 2.In this moment, LED module 4 is closed.If the wafer W being held in principal arm A3 reaches the top of light inlet window 42, make lifter pin using elevating mechanism 24 23 rise the wafer W thus on jack-up principal arm A3, accept wafer W from principal arm A3, the principal arm A3 having joined wafer W is withdrawn into process Outside container 2.
Then, so that cap 22 is declined, form the state of cap 22 of closing as shown in Figure 3, form process atmosphere gas And so that lifter pin 23 is declined, make wafer W be located at the height of regulation for example, the lower surface of the surface of light inlet window 42 and wafer W it Between the height in gap become the height of 3mm.Then, irradiate the absorbing wavelength scope of this wafer W from LED module 4 towards wafer W Radiant light be infrared light, wafer W be heated to the heat treatment temperature of regulation, such as 200 DEG C～400 DEG C, such as 300 DEG C. Thus, in the present embodiment, lifter pin 23 is equivalent to mounting portion.In addition, for example through by exhaust line after making cap 22 decline Aerofluxuss in the start to process container 2 of footpath 30.In the state of closing cap 22 as has been described, covered due to the presence of pin 51 Form gap between portion 22 and lower member 25.Therefore, if becoming negative pressure in process container 2, the atmosphere gas (air) of surrounding Flow into from this gap, as shown in figure 4, being formed from periphery towards the air-flow of central upper in process container 2.
Now contained organic principle for example in coating fluid distils from the coated film of wafer W and becomes sublimate, as The air vent 32 of the sublimate of product central upper towards process container 2 with the air-flow being formed in process container 2 flows Dynamic, and be intended to flow into exhaust pathway 30 from air vent 32.On the other hand, it is formed at the inwall including the top surface of process container 2 The thermocatalytic oxidant layer 5 in face by heater 10 thermal activities, therefore, near the internal face of process container 2 sublimate due to heat The thermocatalyst of catalyst layer 5 acts on and is decomposed.
Here, make the product producing when the process of wafer W, here be from coated film distillation to thermocatalytic oxidant layer 5 Sublimate produce decomposition illustrate.If to thermocatalytic oxidant layer 5, such as Cr2O3Heated, then electronics is excited, had Stronger oxidizing force.If organic principle be sublimate near this thermocatalytic oxidant layer 5, organic principle is oxidized, raw in sublimate Become free radical.The free radical being generated afterwards is propagated at 200 DEG C～400 DEG C in sublimate.And, sublimate is due to freedom Base and cause cracking small molecule, become contained oxygen in the atmosphere gas in the sublimate of small molecule and process container 2 In conjunction with becoming carbon dioxide and water.
Therefore, the atmosphere gas in the process container 2 of air vent 32 aerofluxuss in sublimate urging due to thermocatalytic oxidant layer 5 Agent act on and by aerofluxuss after being decomposed.
If heat treated terminates, lifter pin 23 rises thus jack-up wafer W, and lifter pin 23 directly rises to and conveying arm The height and position being joined between A3.Then, in the delivery position making conveying arm A3 enter into the wafer W in process container 2 Afterwards, lifter pin 23 is made to decline and join wafer W in conveying arm A3.The conveying arm A3 receiving wafer W is maintaining wafer W In the state of retreat, wafer W is exported to outside process container 2.
So arranged from after the thermocatalytic oxidant layer 5 that the sublimate of wafer W distillation is coated in process container 2 is decomposed Gas, but the sublimate of a part invades the gap between wafer W and light inlet window 42, is attached to the surface of light inlet window 42.Therefore, such as Shown in Fig. 5, sublimate 9 separates out in the surface of light inlet window 42, and the transmitance of the light irradiating from LED module 3 is deteriorated.Therefore, wafer W Produce temperature inequality it is impossible to carry out good heating, in addition, sublimate 9 is likely to become the generating source of microgranule.
Thus, such as after terminate the process of wafer W of pre-set number using heat treatment apparatus, carry out For the cleaning operation removing in the sublimate 9 on the surface of light inlet window 42 will be separated out.In this cleaning operation, using such as diameter The Clean- substrate that the back side of the wafer W for 300mm is coated by thermocatalytic oxidant layer 5.If to employing Clean- substrate The removal of sublimate illustrates, then first, operator's Land use models selector 99 selects service mode.By this selection, profit For example take out cleaning with conveying arm 103 from the bearing part C of the supporting region B1 being positioned over the coating shown in Fig. 1, Fig. 2, developing unit Use substrate.Clean- substrate joins in principal arm A3 by conveying arm 104, shelf unit U7, further with this principal arm A3 to place In reason container 2, input is thus join in lifter pin 23.
Afterwards, as shown in fig. 6, making lifter pin 23 decline, Clean- substrate 6 is joined (mounting) in the group of jut 44. Then, open LED module 3 while exhaust pathway 30 starts aerofluxuss, Clean- substrate 6 is heated to such as 300 DEG C.Cause And, LED module 4 is it may be said that be also used as heating part and the substrate heating part of thermocatalyst.Then, the following table of Clean- substrate 6 The thermocatalytic oxidant layer 5 of surface side is activated, and the distance between light inlet window 42 and Clean- substrate 6 closely reach 3mm, therefore, attached Sublimate 9 removal that is decomposed because thermocatalyst acts on of light inlet window 42.The decomposition composition of sublimate 9 and process container Atmosphere gas in 2 are together from exhaust pathway 30 aerofluxuss.
Additionally, Clean- substrate 6 can also be placed in coating, the Storage Department in developing unit.Storage Department can also be such as A part using shelf unit U7.
In the 1st embodiment, when carrying out the heat treated of wafer W in process container 2, in process container 2 Surface forms thermocatalytic oxidant layer 5, and this thermocatalytic oxidant layer 5 is heated.Therefore, distil, draw in the coated film from wafer W The sublimate entering in process container 2 reach thermocatalytic oxidant layer 5 neighbouring when, due to thermocatalytic oxidant layer 5 thermal activities and Be decomposed removal.As a result, the quantitative change flowing into the sublimate in downstream of exhaust pathway 30 is few, therefore, sublimate is to exhaust line The adhesion amount in footpath 30 tails off, and can reduce and safeguard frequency, and the precipitation of the inner surface to process container 2 for the sublimate is pressed down System, therefore, it is possible to reduce microgranule pollution, the frequency of the cleaning in process container 2 is also suppressed.
In addition, the Clean- substrate 6 being formed with thermocatalytic oxidant layer 5 on surface is inputted into process container 2, by clear Clean substrate 6 is heated, thus the sublimate 9 being attached to the surface of light inlet window 42 eliminates.To locate therefore, it is possible to reduce Manage container 2 to decompose and carry out the maintenance frequency of the cleaning of inside.
[the 2nd embodiment]
Fig. 7 and Fig. 8 shows the substrate board treatment of the 2nd embodiment.This substrate board treatment adding shown in Fig. 3 The position making the upper side positioned at process container 2 in exhaust pathway 30 in annealing device is for example configured to maze configuration, with Make the pressure loss more than the position than this position downstream for the pressure loss at this position.At the position being configured to maze configuration It is formed with thermocatalytic oxidant layer 5.In this example embodiment, the position in downstream is equivalent to and constitutes than the upper side positioned at process container 2 The exhaustor 34 of the exhaust pathway of position downstream.The position being configured to maze configuration is equivalent to crushing region (crushing portion), For convenience of description, illustrate as exhaust pathway 300.
Exhaust pathway 300 includes：Downside exhaust pathway 31, one side is connected with air vent 32, towards process container 2 On the right side of in figure, periphery extends；And upside exhaust pathway 33, it is arranged at the top of downside exhaust pathway 31, and its bottom surface warp Connected with the another side of exhaust pathway on the downside of this 31 by connected entrance 31a.Upside exhaust pathway 33 is towards the left side of process container Periphery is multiple along bending right and left, with the exhaustor 34 being connected to so-called factory aerofluxuss (winding discharge duct in factory) Connect.And, exhaust pathway 31 and the respective inner surface of upside exhaust pathway 33 are formed with thermocatalytic oxidant layer 5 on the downside of this. And, it is configured to, is provided with heat transfer plate 36 between upside exhaust pathway 33 and process container 2, to being arranged at process container 2 The heat of heater 10 is conducted heat, and thermocatalytic oxidant layer 5 is heated to such as 300 DEG C.In addition it is also possible to setting is exclusively used in row The heater that gas circuit footpath 300 is heated.
In the 2nd embodiment, if the atmosphere gas in process container 2 flow into exhaust pathway 300 via air vent 32, In this exhaust pathway 300 flow in a period of sublimate decomposed by thermocatalytic oxidant layer 5 and by aerofluxuss.In addition, exhaust pathway 300 Stream bending, the pressure loss forms the exhaustor of exhaust pathway, the i.e. pressure of the exhaustor 34 in downstream than with common layout Power loss is big, and therefore, the atmosphere gas in process container 2 are that exhaust stream is larger with the degree of the inwall collision of exhaust pathway 300. Therefore, the sublimate contained by exhaust stream contact with thermocatalytic oxidant layer 5 or be located at thermocatalytic oxidant layer 5 vicinity when anaplasia Long, can more effectively remove sublimate, as a result, adhesion amount in exhaustor 34 for the sublimate can be reduced, can reduce Safeguard frequency.
Crushing portion be exhaust pathway shape, construction other examples represent in fig .9.Crushing portion shown in Fig. 9 arranges The bottom surface of one side in gas circuit footpath 301 is connected with the air vent 32 of process container 2, and another side linearly extends.And, from The length direction of exhaust pathway 301 is observed, and the wall portion from right side extends and prolongs towards bottom surface from top surface towards the wall portion in left side The seizure plate portion 302 stretched and the wall portion from left side are towards the wall portion capture board that extends and extend towards top surface from bottom surface on right side Portion 302 has alternately been arranged side by side multiple along the length direction of exhaust pathway 301.Exhaust pathway 301 inner surface and The surface of capture unit 302 is formed with thermocatalytic oxidant layer 5.
And, for the exhaust pathway as crushing portion, as shown in Figure 10 or exhaust pathway 303, this exhaust line Footpath 303 is configured to, and the bottom surface of a side is connected with air vent 32, winding in the shape of a spiral towards outside, in outer edge and exhaustor 34 connections.In this case, for example, as shown in Figure 10 or make on the flow direction of exhaust stream seizure plate portion 304 from The structure that the side wall of left and right alternately projects.
Preferably so in the downstream being close to of process container 2, the larger exhaust pathway of the pressure loss is set and in this row Gas circuit footpath forms thermocatalytic oxidant layer 5, as shown in Figure 1 it is also possible to exhaust pathway in the layout according to common exhaust pathway 30 30 setting thermocatalytic oxidant layer 5, even this situation, it may have attachment in the exhaust pathway in downstream for the sublimate is suppressed Effect.Even in addition, not arranging thermocatalyst in the inwall setting thermocatalytic oxidant layer 5 of process container 2 in exhaust pathway The structure of layer 5, it may have the effect that attachment in the exhaust pathway in downstream for the sublimate is suppressed.
In embodiments described above, employ LED array 41 as the substrate heating part of heating wafer W, but It can be heating plate loading plate, being heated by the heaters constituting for loading wafer W.
[the 3rd embodiment]
As the substrate board treatment of the 3rd embodiment of the present invention, (purple to the surface irradiation UV being applied to wafer W Outside line) and carry out the device of UV process, for example make to be formed at the surface planarisation of the coated film of wafer W UV processing meanss example Son illustrates.
As coated film, for example, the SOC film formed can be set forth on the pattern of wafer W.As the raw material of SOC film, can make With by containing the carbon reacting and decomposing with the active oxygen being produced by irradiation ultraviolet radiation under oxygen-containing atmosphere gas, ozone Organic film raw material of compound, for example have polyethylene construction ((- CH2-)n) the polymer raw material of skeleton be dissolved in solvent Liquid.
As shown in figure 11, UV processing meanss have flat and along the elongated rectangular shape of fore-and-aft direction housing 70, It is provided with for the input/output port 71 of input and output wafer W with to this input/output port in the side wall of the front side of housing 70 The shutter 72 that 71 are opened and closed.
In the inside of housing 70, in nearby side, demarcation strip 73 upper side the space observed from input/output port 71 In be provided with conveying arm 74 for conveying wafer W.Conveying arm 74 is provided with travel mechanism (not shown), this travel mechanism For carry out between the conveying arm of outside (not shown) along fore-and-aft direction the handing-over of wafer W nearby side position and with Move between the position of depth side of the handing-over carrying out wafer W between mounting table 81 described later.Conveying arm 74 also functions to as right The effect of the cooling arm that the wafer W after process is cooled down.
The position of nearby side joining wafer W between outside conveying arm is provided with lifter pin 75, outside defeated Send when carrying out the handing-over of wafer W between arm and conveying arm 74, this lifter pin 75 temporarily supports this wafer W.Lifter pin 75 and configuration Elevating mechanism 76 in the space of the lower side of demarcation strip 73 connects, and can the mounting surface than wafer W in conveying arm 74 lean on The position of lower side and than this mounting surface by the top side and can carry out and the conveying arm of outside between wafer W handing-over position Between lift.
The rear side carrying out the position of handing-over of wafer W between conveying arm 74 and the conveying arm of outside is configured with wafer W Mounting table 81.Imbed having heaters 82 in the inside of mounting table 81, it may have as the function of the heating part of heating wafer W.
The lower side of mounting table 81 is provided with lifter pin 83, is somebody's turn to do during the handing-over carrying out wafer W between conveying arm 74 Lifter pin 83 temporarily supports this wafer W.As shown in figure 5, being arranged at mounting table for the through hole 84 for lifter pin 83 insertion 81.
Lifter pin 83 is connected with elevating mechanism 85, by the crystalline substance in the conveying arm 74 of the upper side moving to mounting table 81 Lift between the lower section side position of mounting surface of circle W and the top side position of this mounting surface, thus at it and conveying arm 74 between Carry out the handing-over of wafer W and wafer W is placed in mounting table 81.In addition, lifter pin 83 is configured to, carry in lifter pin 83 Upper surface and top surface that Clean- substrate 6 can be risen in the Clean- substrate 6 that the 1st embodiment is illustrated are (detailed The lower surface of UV through portion 93 described later for thin) between height dimension become in the range of a few mm～more than ten mm for example The height of 3mm.
The upper side of mounting table 81 is provided with lamp house 91, this lamp house 91 contains for the crystalline substance being placed in mounting table 81 Circle W irradiates the UV lamp 92 as light source portion of UV light.The lower surface of lamp house 91 is provided with the UV through portion 93 as light inlet window, should UV through portion 93 makes the UV light irradiating from UV lamp 92 pass through towards wafer W.UV through portion 93 for example includes making the stone of UV light transmission English plate etc..
In addition, the side wall in the lower section of lamp house 91 is provided with gas supply part 94 and air vent in the way of relative to each other 95, wherein, gas supply part 94 is used for supplying clean air in housing 70, and air vent 95 is used for the atmosphere gas in housing 70 Body is exhausted.Exhaust gear 97 is connected with air vent 95 via exhaustor 96.In addition, UV processing meanss are also filled with heat treated Put and be similarly connected with control unit 100.
In this UV processing means, it is coated with substrate carrying mechanism and the lifting outside the wafer W utilization of SOC film on surface Synergism between pin 75 and joined in conveying arm 74.Then one make conveying arm 74 move to mounting table 81 upper side and Stop, so that lifter pin 83 is increased, wafer W is joined in lifter pin 83 from conveying arm 74.So that lifter pin 83 is declined afterwards and incite somebody to action Wafer W is placed in mounting table 81.Then, aerofluxuss are started from air vent 95 while gas supply part 94 supply gas.
Afterwards wafer W is heated to such as 250 DEG C, lights UV lamp 72 and irradiate UV light.By the UV light being irradiated, from crystalline substance Oxygen in the clean air (oxygen-containing atmosphere gas) of top of circle W produces active oxygen, ozone.Surface (the one of SOC film of SOC film Part) by these active oxygens, ozone decomposed and be removed, execute so-called eat-back (etch back Japanese：エッチバック).
When UV being irradiated to such wafer W and carrying out the planarization of SOC film, as shown in figure 12, wafer W is being carried out During heat treated, sometimes it is attached to the lower surface of UV through portion 93 from the sublimate of wafer W distillation, if sublimate 9 is attached to UV Through portion 93, then transmitance decline is it is impossible to carry out good UV process.Therefore, carrying out for example pre-set number The process of wafer W after, be formed with the Clean- of thermocatalytic oxidant layer 5 using at least whole surface in surface and the back side Substrate 6 is carrying out the removal of sublimate 9.
For example utilize the operation same with wafer W, as shown in figure 13, Clean- substrate 6 is placed in mounting table 81.It Afterwards, using mounting table 81, Clean- substrate 6 (thermocatalytic oxidant layer 5) is heated to 200 DEG C～400 DEG C such as 300 DEG C.Then, such as Shown in Figure 14, so that lifter pin 83 is increased, make the height dimension that Clean- substrate 6 rises to and UV through portion 93 between become several mm The height of the such as 3mm in the range of～more than ten mm.Now continue the heating being carried out by mounting table 81, by Clean- substrate 6 Temperature maintains 300 DEG C.In addition, starting aerofluxuss using gas supply part 94 supplying clean air and from air vent 95.Its knot Really, due to the effect of thermocatalytic oxidant layer 5, the sublimate 9 being attached to the lower surface of UV through portion 93 is decomposed, the distillation after decomposition Thing 9 is discharged from air vent 95 together with atmosphere gas.
According to the 3rd embodiment, by heating to Clean- substrate 6, it is attached to the surface of UV through portion 93 Sublimate 9 eliminates.Thus, it is possible to the harmful effect processing for UV being led to through being deteriorated of suppression UV, additionally, there are The effect safeguarding frequency that process container 2 is decomposed the cleaning to carry out inside can be reduced.
In the 3rd embodiment, thermocatalytic oxidant layer can also be formed thus suppressing sublimate downstream side in exhaustor 96 Exhaust pathway precipitation, in this case it is also possible to as the 2nd embodiment, exhaustor 96 to be set to the pressure loss larger Construction.
Alternatively, it is also possible to be constituted mounting table 81 in the way of lifting freely, mounting table 81 is made to rise and make removal substrate Near the lower surface of UV through portion 93, in this example embodiment, at least face side of Clean- substrate 6 is coated i.e. by thermocatalytic oxidant layer 5 Can be it is also possible to clad surface and this two faces of the back side.
The substrate board treatment of the present invention is not limited to heat the device of substrate or utilizes such as processing gas pair The device that substrate is etched.
Material shown in the example of the material being used as thermocatalytic oxidant layer or following chemical formula.BeO (beryllium oxide), MgO (magnesium oxide), CaO (calcium oxide), SrO (strontium oxide), BaO (Barium monoxide), CeO2(cerium oxide), TiO2(two Titanium oxide), ZrO2(zirconium dioxide), V2O5(vanadic anhydride), Y2O3(yittrium oxide), Y2O2S (yttrium oxysulfide：Yttrium oxide sulfide)、Nb2O5(niobium pentaoxide), Ta2O5(tantalum pentoxide), MoO3(molybdenum trioxide), WO3(three oxidations Tungsten), MnO2(manganese dioxide), Fe2O3(iron sesquioxide), Fe3O4(ferroso-ferric oxide), MgFe2O4、NiFe2O4、ZnFe2O4、 ZnCo2O4, ZnO (zinc oxide), CdO (Aska-Rid .), MgAl2O4、ZnAl2O4、Tl2O3(thallium oxide), In2O3(Indium sesquioxide .), SnO2 (tin ash), PbO2(Lead oxide brown), UO2(Uranous oxide), Cr2O3(chromic oxide), MgCr2O4、FeCrO4、CoCrO4、 ZnCr2O4、WO2(tungsten oxide), MnO (manganese oxide), Mn3O4(mangano-manganic oxide), Mn2O3(manganese sesquioxide managnic oxide), FeO (oxidation Ferrum), NiO (nickel oxide), CoO (cobalt oxide), Co3O4(Cobalto-cobaltic oxide), PdO (Palladium monoxide), CuO (copper oxide), Cu2O (oxygen Change two bronze medals), Ag2O (silver oxide), CoAl2O4、NiAl2O4、Ti2O (titanium oxide), GeO (germanium oxide), PbO (lead oxide), TiO (titanium monoxide), Ti2O3(titanium sesquioxide), VO (vanadium oxide), MoO2(molybdenum dioxide), IrO2(iridium dioxide), RuO2(oxidation Ruthenium).And, these thermocatalyst bodies are heated to more than 200 DEG C, are more preferably heated to more than 300 DEG C of temperature.
In addition, in the inner surface of the inner surface that thermocatalyst body is arranged at process container or exhaustor, for example Thermocatalyst body can be set to shape plate-shaped formed body.In addition, maintenance substrate can also be including thermocatalyst The plate body of body.
In addition, by these materials are used for thermocatalytic oxidant layer 5, can make polyethylene terephthalate, polypropylene, Polrvinyl chloride, polystyrene, ABS resin, epoxy resin, phynol residues, benzene, toluene, volatile organic carbon etc. decompose.
In addition, when thermocatalytic oxidant layer being coated on the inner surface of process container or exhaustor it is also possible to setting is to heat The heating part that catalyst layer is heated and the cooling body of cooling thermocatalytic oxidant layer.The wall in process container for example can be included The surrounding of interior or exhaustor buries cooling tubing, make for example to be cooled down by cooler after cooling water flow in the inside of cooling tubing Logical structure.In such a configuration, for example utilize cooling body to cool down thermocatalytic oxidant layer, make the atmosphere gas in process container Or the organic principle contained by the aerofluxuss of exhaust circulation pipe separates out in the surface of thermocatalytic oxidant layer.Utilize heating arrangements afterwards Heating thermocatalytic oxidant layer, makes sublimate decompose and remove.Using such method, thermocatalytic oxidant layer can be cooled down and energetically catch Contained organic principle in collection atmosphere gas, aerofluxuss, therefore, lifts arresting efficiency, thermocatalytic oxidant layer is being carried out heating, is entering More sublimates can be removed during the removal of row organic principle.Thus, it is possible to suppress the downstream effluent to exhaustor further The amount of dynamic organic principle.
[the 4th embodiment]
The embodiment of the 4th～6 of described below represents that the substrate board treatment of the present invention is applied to heat treated fills The example put.
The thermocatalytic medium (thermocatalyst material) of Porous can also be configured at exhaust pathway and make aerofluxuss by the present invention Stream passes through in this thermocatalytic medium, and the 4th embodiment of the present invention is the heat treatment apparatus employing such method Configuration example.Example shown in Figure 15 and Figure 16 has the tectosome 310 including module body 322, to substitute shown in already described Fig. 7 The tectonic position including exhaust pathway 300 in heat treatment apparatus, module body 322 is by the thermocatalytic dosage form of Porous Become block formed body.
Tectosome 310 has：Main part 311, it includes the row that one end is connected to the air vent 32 being formed at cap 22 Gas circuit footpath 312；Box 320, it can insert this exhaust line from the exhaust port 313 of the another side being formed at this exhaust pathway 312 In footpath 312.
Box 320 has housing 321 and the module body 322 of the thermocatalytic medium as Porous.Housing 321 is to maintain module The keeping body of body 322, be formed as from the upstream side of exhaust pathway 312 towards downstream extend and upper surface open substantially case Type.Housing 321 is formed into, when box 320 is inserted into exhaust pathway 312 between the wall and box 320 of exhaust pathway 312 Form the extremely narrow gap of the degree of handling of without prejudice to box 320.In addition, the bottom surface of length direction one side in housing 321, It is formed with hole portion 323 in the position corresponding with air vent 32.And, the side of the another side of the length direction of housing 320 Open, and the horizontal tab 324 for pulling out box 320 from exhaust pathway 312 is formed extended at both sides from the bottom surface of housing 321.
Module body 322 is to make thermocatalyst material be attached to for example to be carried by the catalyst that pottery is formed as porous plastid The filter of body and constitute, be formed as being accommodated in the prism-shaped of housing 321.And, as shown in figure 16, can make module body 322 boxes 320 inserting housings 321 and constituting insert exhaust pathway 312 from exhaust port 313.Exhaust port 313 be connected to work Factory's power facility (Japanese：Work is exerted oneself) pipeline (not shown) connect.
In the heat treatment apparatus of this example, for example the heater 10 located at lid 22 heats across main part 311 Module body 322 in exhaust pathway 312, thermocatalytic medium is activated.In addition it is also possible to arrange heating in main part 311 Device, using this heater heated mould block 322.And if, being exhausted to the atmosphere gas in process container 2, in aerofluxuss When stream flows in exhaust pathway 312, exhaust stream passes through to constitute the space of the porous plastid of module body 322, via pipeline air exhaust water.
So the module body 322 of porous plastid is configured in the way of blocking exhaust pathway 312, make exhaust stream pass through module Space in body 322, therefore, the area contacting with the sublimate contained by exhaust stream of thermocatalytic medium becomes big, in aerofluxuss The decomposition efficiency of sublimate improves.
And, for example every the process of wafer W of predetermined number or the predetermined operating every heat treatment apparatus Time disconnects exhaust port 313 from pipeline, box 320 is taken out from exhaust pathway 312, module body 322 is replaced with new module Body 322.
Hard-decomposed material blocking mould in heat treatment apparatus, if having carried out heat treated, contained by aerofluxuss The space of block 322, extraction flow is likely to decrease, but the heat treatment apparatus according to the 4th embodiment, can be by module body 322 promptly take out from exhaust pathway 312, simply change.Therefore, it is possible to simply be safeguarded, can seek along with dimension The shortening of the operation interrupted time (downtime) of device of shield.
Thermocatalytic medium is made to be attached to the surface of for example granular Ceramic Balls alternatively, it is also possible to alternative module body 322, with The mode in the gap of landfill housing 321 is filled.The substrate being provided with thermocatalytic medium is set to emboliform in the case of, surface Long-pending also change is big, therefore, has same effect.
Moreover, it can be, when module body 322 being arranged at the inside of exhaust pathway 312, with the structure of module body 322 Material is become to be the position court from the upstream side (air vent 32 side) that module body 322 is configured at exhaust pathway 312 for the ceramic density The mode (upstream side, voidage is higher) uprising to the position being configured at downstream (pipe side) is formed.By so Constitute, aerofluxuss in module body 322 by when the pressure loss diminish, therefore, exhaust stream successfully flows in exhaust pathway 312 Dynamic, required extraction flow can be readily insured that.
And, the heating part of thermocatalyst can also be embedded in the inside of module body 322.For instance, it is possible to enumerate as figure The structure of the heater 325 alongst repeatedly bending in the setting of the inside of module body 322 as shown in 17.
[the 5th embodiment]
In addition, being configured to by respective for multiple heat treatment apparatus exhaust pathway even to being applied to the present invention using Figure 18 The embodiment being connected to the substrate board treatment that the aggregation pipe as general exhaust pathway carrys out aerofluxuss illustrates.In Figure 18 In, the reference 300 being connected to heat treatment apparatus 1 represents the single exhaust pathway of heat treatment apparatus 1, reference 330 represent general aggregation pipe, and the downstream of aggregation pipe 330 is connected with factory power facility.And, preferably In, in aggregation pipe 330, the thermocatalytic with thermocatalyst material as shown in Figure 18 is provided with detachable mode Agent unit 340.
For example, as shown in the longitudinal section of Figure 18, thermocatalyst unit 340 has cross sectional shape and aggregation pipe 330 The corresponding pipeline of cross sectional shape 332, the flange of the flange 331 by the two ends being formed at pipeline 332 and aggregation pipe 330 side Handling are freely connected to aggregation pipe 330.It is fixed with the module body of the thermocatalytic medium of Porous in the inside of pipeline 332 341, the outer surface of pipeline 332 is provided with the heater 342 for heated mould block 341 in complete cycle.In addition, the week of heater 342 Enclose and covered by adiabator 343, and, the outside of adiabator 343 is covered by cover 344.In addition, substituting in cover 344 and heating Between device 342, adiabator 343 is set, cooling water both can have been made to circulate between cover 344 and heater 343 it is also possible to supply Adiabatic air.In this example embodiment, each heat treatment apparatus 1 single exhaust pathway 300 for example as the 2nd embodiment party It is provided with thermocatalytic medium like that, in addition to single exhaustor 300, also by set described in formula or the 4th embodiment Pipeline 330 arranges thermocatalytic medium, and the sublimate that cannot remove in single exhaust pathway 300 can be avoided to adhere to heap in downstream Long-pending.
In addition, in the 5th embodiment, hold processing in being not provided with thermocatalytic medium in single exhaust pathway 300 In the case that the inner surface of device 2 is provided with thermocatalytic medium, or the inner surface in single exhaust pathway 300 and process container 2 It is also possible to only arrange thermocatalytic medium in aggregation pipe 330 in the case of being all not provided with thermocatalytic medium.In addition, also may be used To be set to also set up the knot of thermocatalyst unit 340 in the heat treatment apparatus of the 3rd embodiment in aggregation pipe 330 Structure.
[the 6th embodiment]
Figure 19, Figure 20 represent the heat treatment apparatus of the 6th embodiment of the present invention.In this heat treatment apparatus, right In the mounting table 360 of mounting wafer W, by the use of the hot plate 362 of the heater 361 being embedded with as heating part with for this hot plate 362 Embedded matrix 370 circumferentially opens up multiple aerofluxuss in the surface complete cycle of the matrix 370 of the circumference as mounting table 360 Mouth 363.In matrix 370, the exhaust pathway 364 with each air vent 363 as opening extends downwards, also towards mounting table 360 central part is formed deviously.
On the other hand, the lower surface central part of mounting table 360 is connected with exhaustor 365, with using columned module body 366 lower surface blocks the mode of the peristome of this exhaustor 365 and blocks exhaust pathway 364 with the side face of mounting table 360 The mode in downstream is provided with for example columned module body 366.That is, by module body between exhaustor 365 and exhaust pathway 364 366 closure, the upper surface of module body 366 is contacted with the lower surface of hot plate 362.Module body 366 is and institute in the 4th embodiment The module body 322 using similarly makes thermocatalytic medium be attached to the ceramic filter of such as Porous and constitute.
In addition it is also possible to be set to following structure：Exhaust pathway 364 is included with each air vent 363 accordingly along upper and lower Exhaust pathway and the general exhaust chamber of the lower end institute opening of these exhaust pathways that direction extends, are provided with mould in this aerofluxuss interior Block 366.
In addition, being provided with cap 367 above mounting table 360, the center of top of cap 367 with for supply such as nitrogen (N2Gas) etc. the purge gas feed path 368 of purge gas connect.Thus, in the present embodiment, heater 361 dual-purpose It is used as the heating part of thermocatalyst.
By so constituting, the hot plate 362 of mounting table 360 can be utilized to heat wafer W, and can be by located at aerofluxuss The module body 366 of the thermocatalytic medium in path 364 heats and makes its activation.And, upper to wafer W from air vent 363 The atmosphere gas of side have carried out aerofluxuss aerofluxuss by the module body 366 after being heated during aerofluxuss, therefore, it is possible to make contained by aerofluxuss Some sublimates decompose.
In addition, the mounting table as the heat treatment apparatus shown in the 1st embodiment～the 5th embodiment is it is also possible to fit With the mounting table 360 shown in Figure 19, Figure 20.
Alternatively, it is also possible to be, for example, the aerofluxuss in the downstream in the region being provided with thermocatalytic medium in exhaust pathway are measured Pressure, when pressure at expulsion exceedes threshold value, makes the temperature of thermocatalytic medium rise.For example, as shown in figure 21 like that in the 4th enforcement In heat treatment apparatus shown in mode, it is provided with for surveying in the downstream in the region being provided with module body 322 of exhaust pathway 312 Determine the pressure at expulsion determination part 326 of pressure at expulsion.And, it is configured to, control unit 100 is previously stored with the upper of pressure at expulsion Limit threshold value, the measured value to pressure at expulsion determination part 326 and upper limit of pressure threshold value are compared, and exceed the upper limit in pressure at expulsion In the case of threshold value, the temperature of the heater 10 of the heating part as thermocatalyst is made to rise to such as 500 DEG C.
For example, in heat treatment apparatus, carrying out the process of wafer W, if continuing the aerofluxuss of atmosphere gas, not dividing completely The sublimate of solution is attached to module body 322, exhaust pathway 312 sometimes, and the pressure loss uprises sometimes, and therefore, extraction flow has can Can reduce.Therefore, when pressure at expulsion rises, the temperature by making heater 10 rises, the activity rising of thermocatalytic medium. Thus, the material plugging module body 322, the attachment being attached to exhaust pathway 312 also can decompose, and can reduce pressure and damage Lose, reduced-maintenance frequency can be subtracted.
In addition, pressure at expulsion determination part 326 can also lean on upstream side (to process located at than the region being provided with thermocatalytic medium Container 2 side) position.Or can also be to measure the flow of aerofluxuss, in the case that flow is less than lower limit, make thermocatalytic The temperature of the heating part of agent rises.
Moreover, it can be, for example often process the wafer W of predetermined number or the duration of runs of device often through pre- The fixed time, the heating-up temperature of the heating part of thermocatalyst is just made to increase with Time constant.By so constituting, Neng Gouding Phase ground removes the hard-decomposed material of attachment on formed body, can subtract reduced-maintenance frequency.
[checking test]
For by Cr2O3The substrate of cladding, the sample having polymer (FRP) in its surface attachment is set to reference example, will be Its surface does not have the sample of polymer attached to be set to comparative example, measure by the sample of reference example and comparative example from 0 DEG C of temperature by Gradually bring up to the change of quality during 600 DEG C of temperature and hot-fluid.The mensure of hot-fluid employs differential scanning calorimetry device.
Figure 22 and Figure 23 is the quality representing the sample corresponding with temperature in reference example and comparative example respectively The performance plot of the value of rate of change (quality %) and hot-fluid (μ V).According to this result, in reference example, temperature is at 300 DEG C～350 DEG C Hot-fluid increase nearby, Mass lost.It is thought that Cr2O3Work as thermocatalyst, decomposed the reason of polymer.Thus, Employing Cr2O3As in the case of thermocatalytic oxidant layer it may be said that by be heated to 300 DEG C about such that it is able to decompose attachment Polymer.

Claims (20)

1. a kind of substrate board treatment it is characterised in that
This substrate board treatment includes：
Process container, is internally provided with the mounting portion for loading processed substrate at it；
Exhaust pathway, it is used for the atmosphere gas in described process container are exhausted；
Thermocatalyst material, it is arranged at least one of the inner surface of described process container and described exhaust pathway, right It heats and makes its thermal activities, for decomposing the generation producing due to the process of processed substrate from this processed substrate Thing；
The heating part of thermocatalyst, it is used for described thermocatalyst material is heated.
2. substrate board treatment according to claim 1 it is characterised in that
This substrate board treatment has the substrate heating part that the processed substrate being placed in described mounting portion is heated.
3. substrate board treatment according to claim 2 it is characterised in that
The product producing from described processed substrate is sublimate.
4. the substrate board treatment according to any one of claims 1 to 3 it is characterised in that
Described exhaust pathway has the pressure loss crushing region bigger than the pressure loss of side downstream,
Described crushing region is provided with described thermocatalyst material.
5. the substrate board treatment according to any one of Claims 1 to 4 it is characterised in that
This substrate board treatment includes：
Light source portion, it is used for the processed substrate irradiation light being placed in described mounting portion；
Light inlet window, it is used for making the atmosphere gas in described light source portion and process container separate；
Selector, it is used for selecting service mode；
Control unit, its output control signal, to execute following steps：
To there is the maintenance substrate of described thermocatalyst material into described process container when have selected described service mode The step of input；
Then in order that described thermocatalyst material thermal activities and using described substrate heating part heat described maintenance substrate Step；
Described product in order to be attached to described light inlet window removes and makes the described maintenance substrate after heating close to described The step of light inlet window.
6. a kind of substrate board treatment it is characterised in that
This substrate board treatment includes：
Process container, is internally provided with the mounting portion for loading processed substrate at it；
Substrate heating part, it is used for the processed substrate being placed in described mounting portion is heated；
Exhaust pathway, it is used for the atmosphere gas in described process container are exhausted；
Light source portion, it is used for the substrate irradiation light being placed in described mounting portion；
Light inlet window, it is used for separating the atmosphere gas in described light source portion and process container；
Selector, it is used for selecting service mode；
Control unit, its output control signal, to execute following steps：
When have selected described service mode, the maintenance substrate with thermocatalyst material is inputted into described process container Step, wherein, described thermocatalyst material is heated and made its thermal activities for decomposing process due to substrate and The product producing from substrate is sublimate；
Then in order that described thermocatalyst material thermal activities and using described substrate heating part heat described maintenance substrate Step；
Described sublimate in order to be attached to described light inlet window removes and makes the described maintenance substrate after heating close to described The step of light inlet window.
7. the substrate board treatment according to claim 5 or 6 it is characterised in that
Described light source portion is also used as described substrate heating part.
8. the substrate board treatment according to claim 5 or 6 it is characterised in that
Described light source portion is the lamp of irradiation ultraviolet radiation.
9. the substrate board treatment according to any one of claim 5～8 it is characterised in that
The described maintenance substrate after heating is made using keeping substrate from rear side and to make substrate close to the step of described light inlet window The lifter pin of lifting is carrying out.
10. the substrate board treatment according to any one of claim 1～9 it is characterised in that
Described thermocatalyst material is formed as stratiform.
11. substrate board treatments according to any one of claim 1～9 it is characterised in that
Described thermocatalyst material is configured in the module body of supported on carriers thermocatalyst of Porous or particle Body, is arranged in the way of blocking described exhaust pathway.
12. substrate board treatments according to claim 11 it is characterised in that
This substrate board treatment is configured to described thermocatalyst material and is accommodated in the box of housing to load and unload and freely install In exhaust pathway.
13. substrate board treatments according to claim 11 or 12 it is characterised in that
This substrate board treatment has：
Determination part, it measures the pressure at expulsion of described exhaust pathway or extraction flow；
Control unit, it is controlled, to exceed setting value in the pressure at expulsion being determined by described determination part or to determine Extraction flow be less than setting value when, make thermocatalyst heating part heating-up temperature rise.
14. substrate board treatments according to any one of claim 1～12 are it is characterised in that this processing substrate fills Put with control unit, this control unit is controlled, so that the accumulated time of often predetermined processing substrate or often predetermined substrate Process number makes the heating-up temperature of the heating part of thermocatalyst rise temporarily.
15. substrate board treatments according to any one of claim 1～14 are it is characterised in that described process container It is provided with multiple, there is each independent exhaust pathway interflow suitable with the described exhaust pathway being respectively arranged on each process container and form Shared exhaust pathway,
Described thermocatalyst material located at described independent exhaust pathway, and, be configured to the supported on carriers heat in Porous and urge The thermocatalyst material of the module body of agent or particle body is arranged in the way of blocking Universal Exhaust Gas path.
A kind of 16. substrate processing method using sames it is characterised in that
This substrate processing method using same includes following operation：
By mounting portion in process container for the processed substrate-placing and the operation that processed；
Operation atmosphere gas in described process container being exhausted via exhaust pathway；
The thermocatalyst material of at least one of the inner surface being arranged at described process container and described exhaust pathway is carried out Heat and make thermocatalyst material thermal activities thus decomposing the product producing from substrate due to the process of processed substrate Operation.
17. substrate processing method using sames according to claim 16 it is characterised in that
While being heated while carrying out being placed in the process of the processed substrate of described mounting portion using substrate heating part.
18. substrate processing method using sames according to claim 16 or 17 it is characterised in that
Described thermocatalyst material is configured in the module body of supported on carriers thermocatalyst of Porous or particle Body, is arranged in the way of blocking described exhaust pathway,
This substrate processing method using same includes following operation：Determine in the determination part by the pressure at expulsion measuring described exhaust pathway When pressure at expulsion exceedes setting value, or the exhaust stream determining in the determination part by the extraction flow measuring described exhaust pathway When amount is less than setting value, the heating-up temperature of thermocatalyst material is made to increase.
19. substrate processing method using sames according to any one of claim 16～18 are it is characterised in that this processing substrate side Method includes following operation：Often the process number of the accumulated time of predetermined processing substrate or often predetermined substrate makes thermocatalytic temporarily The heating-up temperature of the heating part of agent rises.
A kind of 20. maintaining methods of substrate board treatment, it is the method safeguarding substrate board treatment,
This substrate board treatment includes：
Process container, is internally provided with the mounting portion for loading processed substrate at it；
Substrate heating part, it is used for the processed substrate being placed in described mounting portion is heated；
Exhaust pathway, it is used for the atmosphere gas in described process container are exhausted；
Light source portion, it is used for the substrate irradiation light being placed in described mounting portion；
Light inlet window, its be used for separating the atmosphere gas in described light source portion and process container it is characterised in that
The maintaining method of this substrate board treatment includes following operation：
The operation that the maintenance substrate with thermocatalyst material is inputted into described process container, wherein, urges to described heat Agent material is heated and so that the product that its thermal activities produces from substrate for the process decomposed due to substrate is risen Magnificent thing；
Then in order that described thermocatalyst material thermal activities and using described substrate heating part heat described maintenance substrate Operation；
Described sublimate in order to be attached to described light inlet window removes and makes the described maintenance substrate after heating close to described The operation of light inlet window.
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