TW202324499A - Heat treatment apparatus, heat treatment method, and computer recording medium - Google Patents

Heat treatment apparatus, heat treatment method, and computer recording medium Download PDF

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TW202324499A
TW202324499A TW111140234A TW111140234A TW202324499A TW 202324499 A TW202324499 A TW 202324499A TW 111140234 A TW111140234 A TW 111140234A TW 111140234 A TW111140234 A TW 111140234A TW 202324499 A TW202324499 A TW 202324499A
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Taiwan
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solvent
valve
aforementioned
heat treatment
exhaust pipe
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TW111140234A
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Chinese (zh)
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大幸信
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

The purpose of the present invention is to inhibit clogging of an open/close valve provided in an exhaust system with sublimate generated by heating a substrate. A heat treatment apparatus for heat-treating a substrate comprises: a heating unit for heating the substrate; an exhaust pipe into which sublimate generated by the heating of the substrate flows; an open/close valve provided on the exhaust pipe; and a droplet supply mechanism for supplying droplets of solvent to the exhaust pipe. The droplet supply mechanism includes a droplet supply pipe connected to the exhaust pipe upstream of the open/close valve.

Description

加熱處理裝置、加熱處理方法及電腦記憶媒體Heat treatment device, heat treatment method and computer storage medium

本揭示，係關於加熱處理裝置、加熱處理方法及電腦記憶媒體。This disclosure relates to a heat treatment device, a heat treatment method, and a computer storage medium.

專利文獻1，係揭示一種「在處理容器內加熱形成有塗佈膜之基板」的加熱處理裝置。該加熱處理裝置，係具有：載置部，被設置於處理容器內，載置基板；加熱部，用以加熱被載置於載置部的基板；吸引管，通往被形成於載置部的吸引口，貫通載置部且往正下方延伸；及捕集容器，被設置於吸引管與吸引機構之間的吸引路徑，捕集容器，係構成為在俯視下被設置於載置部的正下方並與吸引管連接，捕集處理容器內的昇華物。 [先前技術文獻] [專利文獻] Patent Document 1 discloses a heat treatment apparatus that "heats a substrate on which a coating film is formed in a treatment container". The heat treatment device has: a mounting part, which is arranged in a processing container, and mounts a substrate; a heating part, which is used to heat the substrate mounted on the mounting part; The suction port penetrates the loading portion and extends directly below; and the collection container is arranged on the suction path between the suction pipe and the suction mechanism, and the collection container is configured to be arranged on the loading portion in a plan view. Directly below and connected to the suction tube to trap sublimates in the treatment vessel. [Prior Art Literature] [Patent Document]

[專利文獻1] 日本特開2021-009923號公報[Patent Document 1] Japanese Patent Laid-Open No. 2021-009923

[本發明所欲解決之課題][Problems to be Solved by the Invention]

本揭示之技術，係抑制「因基板之加熱而產生的昇華物堵塞於被設置在排氣系統之開關閥」的情形。 [用以解決課題之手段] The technology of the present disclosure is to suppress the situation that "the sublimate generated by the heating of the substrate clogs the on-off valve installed in the exhaust system". [Means to solve the problem]

本揭示之一態樣，係一種對基板進行加熱處理的加熱處理裝置，其特徵係，具備有：加熱部，用以加熱前述基板；排氣管，流入有因前述基板之加熱而產生的昇華物；開關閥，被設置於前述排氣管；及液滴供給機構，將溶劑的液滴供給至前述排氣管，前述液滴供給機構，係在前述開關閥之上游側具有被連接於前述排氣管的液滴供給管。 [發明之效果] One aspect of the present disclosure is a heat treatment device for heat-treating a substrate, which is characterized in that it includes: a heating unit for heating the substrate; object; a switch valve, which is arranged in the aforementioned exhaust pipe; and a liquid drop supply mechanism, which supplies liquid droplets of the solvent to the aforementioned exhaust pipe, and the aforementioned liquid drop supply mechanism is connected to the aforementioned liquid drop supply mechanism on the upstream side of the aforementioned switch valve. Droplet supply tube for exhaust pipe. [Effect of Invention]

根據本揭示，可抑制「因基板之加熱而產生的昇華物堵塞於被設置在排氣系統之開關閥」的情形。According to the present disclosure, it is possible to suppress the situation that "the sublimate generated by the heating of the substrate clogs the on-off valve provided in the exhaust system".

自以往，存在有如下述情形：在半導體基板例如半導體晶圓(以下，有時稱為「晶圓」)之表面塗佈各種處理液，例如用以形成圖案的光阻液、用以提高電漿耐性之硬遮罩形成用的例如SOC。而且，在該些處理液之塗佈後，係在加熱處理裝置內進行加熱晶圓的加熱處理。像這樣的加熱處理，係為了確保塗佈膜之均勻性而必須均勻地加熱對象晶圓，通常將對象晶圓載置於平坦的載置台或熱板上而進行。Conventionally, there have been situations in which various processing liquids, such as photoresist liquids for forming patterns, for improving electrical For example, SOC for forming a hard mask of slurry resistance. Then, after the coating of these processing liquids, the heat treatment of heating the wafer is performed in the heat treatment apparatus. Such heat treatment requires uniform heating of the target wafer in order to ensure the uniformity of the coating film, and is usually performed by placing the target wafer on a flat mounting table or a hot plate.

然而，近年來，雖製造許多如例如3D-NAND型晶片般的多層層積型元件，但當層積數變多時，則晶圓本身在一連串處理的過程中有時會產生翹曲。在產生了該翹曲的狀態下，例如當於熱板上對該晶圓進行加熱處理時，則無法均勻地加熱晶圓而對膜厚的均勻性產生影響。However, in recent years, although many multi-layer laminated devices such as 3D-NAND wafers have been produced, when the number of laminates increases, the wafer itself may warp during a series of processes. For example, when the wafer is heat-treated on a hot plate in a state where the warpage has occurred, the wafer cannot be heated uniformly, which affects the uniformity of the film thickness.

因此，例如在將晶圓載置於熱板或載置台上並進行加熱的情況下，係進行一邊吸引吸附該晶圓而矯正晶圓之翹曲，一邊加熱該晶圓。Therefore, for example, when a wafer is placed on a hot plate or a mounting table and heated, the wafer is heated while being sucked and sucked to correct the warp of the wafer.

然而，在被塗佈於對象晶圓上之處理液為例如前述SOC的情況下，有時在加熱時會產生大量的昇華物。此時，處理空間內之氛圍，係雖從晶圓的上方或周圍被排出，但關於吸引晶圓之吸引排氣系統，係另外通過貫通了熱板的吸引路徑被排出。However, when the processing liquid coated on the target wafer is, for example, the aforementioned SOC, a large amount of sublimation may be generated during heating. At this time, the atmosphere in the processing space is exhausted from above or around the wafer, but the suction exhaust system that sucks the wafer is also exhausted through the suction path that penetrates the hot plate.

由於在吸引排氣系統中，係以高排氣壓力進行吸引，因此，流路窄的部位較多，且於吸引排氣系統之開關閥的設置部位處，係流路特別窄。因此，有因晶圓之加熱而產生的昇華物沈積於其開關閥之顧慮。當昇華物沈積於開關閥時，則由於開關閥內之流路伴隨著沈積量的增加而變得更窄，因此，吸引排氣系統的吸引壓力會下降。而且，當吸引壓力持續下降時，則無法以所期望的吸引壓力吸引保持晶圓，並無法矯正被加熱之晶圓的翹曲。In the suction and exhaust system, the suction is carried out with high exhaust pressure, so there are many places where the flow path is narrow, and the flow path is particularly narrow at the position where the on-off valve of the suction and exhaust system is installed. Therefore, there is a concern that the sublimation produced by the heating of the wafer is deposited on its switching valve. When the sublime is deposited on the on-off valve, the flow path in the on-off valve becomes narrower with the increase of the deposition amount, so the suction pressure of the suction exhaust system will drop. Moreover, when the suction pressure continues to drop, the wafer cannot be sucked and held at the desired suction pressure, and warpage of the heated wafer cannot be corrected.

因此，本揭示之技術，係抑制「因基板之加熱而產生的昇華物堵塞於被設置在排氣系統之開關閥」的情形。Therefore, the technology of the present disclosure is to suppress the situation that "the sublimate generated by heating the substrate clogs the on-off valve provided in the exhaust system".

以下，參閱圖面，說明關於本實施形態之加熱處理裝置的構成。另外，在本說明書中，對於實質上具有同一機能構成的要素，係賦予同一符號而省略重複說明。Hereinafter, referring to the drawings, the configuration of the heat treatment apparatus according to the present embodiment will be described. In addition, in this specification, the same code|symbol is attached|subjected to the element which has substantially the same functional structure, and repeated description is abbreviate|omitted.

圖1，係從側面觀看而示意地表示本實施形態的加熱處理裝置之構成的說明圖。圖2，係示意地表示本實施形態之溶劑的液滴供給機構之構成的說明圖。FIG. 1 is an explanatory diagram schematically showing the configuration of a heat treatment apparatus according to the present embodiment viewed from the side. FIG. 2 is an explanatory diagram schematically showing the configuration of a solvent droplet supply mechanism according to the present embodiment.

如圖1所示，加熱處理裝置1，係具有處理容器2。處理容器2，係具有：底部構造體3，構成底部；蓋部4，構成頂部；及環形閘門5，構成側面。處理容器2，係被設置於未圖示的殼體內。As shown in FIG. 1 , a heat treatment apparatus 1 includes a treatment container 2 . The processing container 2 has: a bottom structure 3 constituting the bottom; a cover 4 constituting the top; and an annular gate 5 constituting the side. The processing container 2 is installed in an unillustrated casing.

底部構造體3，係經由支撐構件7被支撐於未圖示的前述殼體的基台6之上。底部構造體3，係具備有：支撐台12，在比緣部11更內側形成有凹部，且由扁平的圓筒體所構成。在支撐台12之凹部，係設置有用以載置晶圓W的載置部即熱板13。The bottom structure 3 is supported on the base 6 of the above-mentioned case which is not shown via the support member 7. As shown in FIG. The bottom structure 3 is provided with a support base 12, a concave portion is formed inside the edge portion 11, and is constituted by a flat cylindrical body. In the concave portion of the support table 12, a heating plate 13, which is a mounting portion for mounting the wafer W, is provided.

在熱板13內，係設置有：作為加熱部的加熱器14，用以對經載置的晶圓W進行加熱處理。又，例如在周方向等間隔地設置有3根升降銷15，該升降銷15，係用以貫通底部構造體3，在與外部之未圖示的搬送裝置之間進行收授晶圓W。升降銷15，係被構成為藉由設置於基台6上的升降機構16進行升降，可向熱板13上突出。Inside the hot plate 13, a heater 14 is provided as a heating unit for heat-processing the placed wafer W. As shown in FIG. Also, for example, three lift pins 15 are provided at equal intervals in the circumferential direction, and the lift pins 15 penetrate the bottom structure 3 to transfer the wafer W to and from an external transfer device (not shown). The lift pin 15 is configured to be raised and lowered by a lift mechanism 16 provided on the base 6 and can protrude toward the heating plate 13 .

蓋部4，係由直徑比底部構造體3大的圓板狀之構件所構成。蓋部4，係被支撐於前述未圖示之殼體的頂棚。蓋部4，係具有在俯視下其外緣位於比底部構造體3之外緣更外側的大小。蓋部4，係中空形狀，在上面部4a與下面部4b之間形成有扁平之圓筒形狀的排氣室4c。The cover part 4 is constituted by a disc-shaped member whose diameter is larger than that of the bottom structure 3 . The cover part 4 is supported by the ceiling of the above-mentioned unillustrated housing. The cover portion 4 has a size such that its outer edge is located outside the outer edge of the bottom structure 3 in plan view. The cover part 4 is hollow, and a flat cylindrical exhaust chamber 4c is formed between the upper part 4a and the lower part 4b.

排氣室4c，係被設定為其外緣成為與底部構造體3的外緣之位置大致相同的位置。在下面部4b之周邊部，係於周方向等間隔地形成有與排氣室4c連通的複數個外周排氣口4d。外周排氣口4d，係開口於比被載置於熱板13的晶圓W之外緣更外側的位置。The exhaust chamber 4 c is set so that its outer edge becomes substantially the same position as the outer edge of the bottom structure 3 . A plurality of outer peripheral exhaust ports 4d communicating with the exhaust chamber 4c are formed at equal intervals in the circumferential direction on the peripheral portion of the lower surface portion 4b. The peripheral exhaust port 4 d is opened at a position outside the outer edge of the wafer W placed on the hot plate 13 .

排氣室4c之上方亦即蓋部4的上面部4a，係連接有通往排氣室4c的外周排氣管21。在外周排氣管21，係當以蓋部4側作為上游側時，則從上游側起設置有閥V11及流量調整部22並被連接於設置在工廠內的工廠排氣系統。Above the exhaust chamber 4c, that is, the upper surface 4a of the cover 4 is connected with a peripheral exhaust pipe 21 leading to the exhaust chamber 4c. In the outer peripheral exhaust pipe 21, when the cover portion 4 side is the upstream side, a valve V11 and a flow rate regulator 22 are provided from the upstream side, and are connected to a factory exhaust system installed in the factory.

又，在蓋部4之下面部4b的中央部，係形成有中央排氣口4e。中央排氣口4e之中心，係開口於與被載置在熱板13的晶圓W之中心一致。在中央排氣口4e，係連接有中央排氣管23的一端側，該中央排氣管23，係被設置為貫通排氣室4c。在中央排氣管23，係當以蓋部4側為上游側時，從上游側設置有閥V12及流量調整部24並被連接於工廠排氣系統。In addition, a center air outlet 4e is formed in the center of the lower surface 4b of the lid 4 . The center of the central exhaust port 4 e is opened to coincide with the center of the wafer W placed on the hot plate 13 . One end side of the central exhaust pipe 23 provided so as to penetrate the exhaust chamber 4c is connected to the central exhaust port 4e. The central exhaust pipe 23 is provided with a valve V12 and a flow rate regulator 24 from the upstream side when the cover 4 side is the upstream side, and is connected to the factory exhaust system.

在底部構造體3之周圍，係設置有環形閘門5，該環形閘門5，係用以堵塞底部構造體3與蓋部4之間的間隙之周圍而形成處理空間的閘門構件。環形閘門5，係作為整體而具有環狀之中空部的構成，具有外側閘門部5a與內側閘門部5b，在外側閘門部5a與內側閘門部5b之間，係形成有環狀空間5c。Around the bottom structure 3, an annular gate 5 is provided. The annular gate 5 is a gate member for blocking the periphery of the gap between the bottom structure 3 and the cover 4 to form a processing space. The annular gate 5 has an annular hollow portion as a whole, has an outer gate portion 5a and an inner gate portion 5b, and an annular space 5c is formed between the outer gate portion 5a and the inner gate portion 5b.

在外側閘門部5a之上方側，係遍及全周等間隔地形成有與環狀空間5c連通的複數個流入口5d。在內側閘門部5b之下方側，係遍及全周等間隔地形成有與環狀空間5c連通的複數個供給口5e。藉由該構成，收容處理容器2之前述殼體(未圖示)內的惰性氣體例如氮氣，係被均勻地供給至處理容器2。On the upper side above the outer gate portion 5a, a plurality of inlets 5d communicating with the annular space 5c are formed at equal intervals over the entire circumference. On the lower side of the inner shutter portion 5b, a plurality of supply ports 5e communicating with the annular space 5c are formed at equal intervals over the entire circumference. With this configuration, the inert gas such as nitrogen gas inside the casing (not shown) that accommodates the processing container 2 is uniformly supplied to the processing container 2 .

環形閘門5，係藉由下面側的環狀板5f予以支撐，環狀板5f，係藉由被設置於基台6的升降機構25上下移動。亦即，環形閘門5，係如圖1所示般，上升至內側閘門部5b之上側碰到蓋部4的下面外周部為止，在處理容器2中之晶圓W的上方形成處理空間S。又，在下降時，為了搬入搬出被載置於熱板13的晶圓W，形成搬入搬出晶圓W之搬送裝置(未圖示)的進入退避空間。The annular gate 5 is supported by an annular plate 5f on the lower side, and the annular plate 5f moves up and down by an elevating mechanism 25 provided on the base 6 . That is, as shown in FIG. 1 , the ring gate 5 rises until the upper side of the inner gate portion 5 b touches the lower peripheral portion of the cover portion 4 to form a processing space S above the wafer W in the processing container 2 . Moreover, when descending, in order to carry in and out the wafer W placed on the hot plate 13, an entry and retreat space is formed for a transfer device (not shown) that carries in and out the wafer W.

另外，為了在排氣室4c的內部、壁面分別防止昇華物之析出，蓋部4及處理容器2之壁內，係埋設有加熱器(未圖示)，且被加熱至所期望的溫度例如300℃。In addition, in order to prevent the precipitation of sublimates inside and on the wall of the exhaust chamber 4c, a heater (not shown) is embedded in the cover 4 and the wall of the processing container 2, and is heated to a desired temperature such as 300°C.

在熱板13，係於上面的周邊部以等間隔形成有複數個例如8個吸引口31。在該吸引口31，係連接有分別貫通熱板13、底部構造體3之筒狀的吸引管32之上端部。各吸引管32之下端部，係貫通基台6且與被配置於基台6之下方的真空槽40連接。真空槽40，係在俯視下位於熱板13的正下方。在吸引管32中之基台6的貫通部分之外周，係設置有斷熱材料33。A plurality of, for example, eight suction ports 31 are formed at equal intervals on the peripheral portion of the hot plate 13 . The upper end of a cylindrical suction pipe 32 penetrating through the heating plate 13 and the bottom structure 3 is connected to the suction port 31 . The lower end of each suction tube 32 passes through the base 6 and is connected to a vacuum chamber 40 disposed below the base 6 . The vacuum groove 40 is located directly below the hot plate 13 in a plan view. A heat insulating material 33 is provided on the outer periphery of the penetrating portion of the base 6 in the suction pipe 32 .

真空槽40，係藉由支撐台51予以支撐，支撐台51，係藉由升降機構52上下移動自如。在圖1所示之狀態中，真空槽40，係藉由升降機構52位於上升的位置，亦即各吸引管32的下端部與真空槽40位於連接位置。另一方面，當藉由升降機構52使支撐台51下降時，則各吸引管32之下端部與真空槽40的連接狀態被解除。在真空槽40之下方，係配置有承接部53。因此，當藉由升降機構52使支撐台51下降時，則可僅將真空槽40載置於承接部53。The vacuum tank 40 is supported by a support platform 51, and the support platform 51 is freely movable up and down by a lifting mechanism 52. In the state shown in FIG. 1 , the vacuum tank 40 is positioned at an elevated position by the lifting mechanism 52 , that is, the lower end of each suction tube 32 is at a connecting position with the vacuum tank 40 . On the other hand, when the support table 51 is lowered by the lifting mechanism 52, the connection state between the lower end of each suction tube 32 and the vacuum chamber 40 is released. Below the vacuum chamber 40, a receiving portion 53 is arranged. Therefore, when the support table 51 is lowered by the elevating mechanism 52 , only the vacuum chamber 40 can be placed on the receiving portion 53 .

在真空槽40，係連接有排氣管41。由於吸引晶圓W之上述吸引管32，係被連接於上升的真空槽40，因此，經由真空槽40被連接於排氣管41。在排氣管41，係設置有作為開關閥的閥V13。而且，當以真空槽40作為上游側時，則排氣管41，係自閥V13起下游側通往例如噴射器或鼓風扇等的吸引機構50。因此，藉由使該吸引機構50作動的方式，形成從吸引口31、吸引管32、真空槽40連接到排氣管41、閥V13、吸引機構50的吸引路徑。An exhaust pipe 41 is connected to the vacuum chamber 40 . Since the suction pipe 32 for sucking the wafer W is connected to the raised vacuum chamber 40 , it is connected to the exhaust pipe 41 via the vacuum chamber 40 . The exhaust pipe 41 is provided with a valve V13 as an on-off valve. Furthermore, when the vacuum tank 40 is used as the upstream side, the exhaust pipe 41 is connected to the suction mechanism 50 such as an ejector or a blower fan on the downstream side from the valve V13. Therefore, by activating the suction mechanism 50 , a suction path connecting the suction port 31 , the suction pipe 32 , and the vacuum chamber 40 to the exhaust pipe 41 , the valve V13 , and the suction mechanism 50 is formed.

如圖2所示般，本實施形態之加熱處理裝置1，係具有：液滴供給機構100，將溶劑的液滴供給至上述排氣管41，使沈積於閥V13的昇華物溶解。As shown in FIG. 2, the heat treatment apparatus 1 of the present embodiment includes a droplet supply mechanism 100 for supplying solvent droplets to the exhaust pipe 41 to dissolve the sublimated product deposited on the valve V13.

液滴供給機構100，係具備有：溶劑瓶110，作為收容有溶劑的溶劑供給部；及溶劑槽120，作為儲存從溶劑瓶110所供給之溶劑的溶劑儲存部。溶劑槽120，係被形成為例如內徑為1~6mm的管狀，在內部，係儲存例如1ml以下的溶劑。另外，溶劑之種類，係只要可溶解昇華物則不特別限定，例如可使用丙酮等的有機溶劑。The droplet supply mechanism 100 includes: a solvent bottle 110 as a solvent supply unit containing a solvent; and a solvent tank 120 as a solvent storage unit for storing the solvent supplied from the solvent bottle 110 . The solvent tank 120 is formed, for example, in a tubular shape with an inner diameter of 1 to 6 mm, and stores, for example, less than 1 ml of solvent inside. In addition, the type of solvent is not particularly limited as long as the sublimation product can be dissolved, and for example, an organic solvent such as acetone can be used.

溶劑瓶110為密閉容器，在溶劑瓶110之上部，係設置有：配管101，作為供給惰性氣體之一例即氮氣的第1氣體供給管。該配管101之一端部，係被連接於未圖示的氮氣供給源，另一端部，係在溶劑瓶110之內部，位於溶劑液面之上方的空間。The solvent bottle 110 is an airtight container, and on the upper part of the solvent bottle 110, a pipe 101 is provided as a first gas supply pipe for supplying nitrogen as an example of an inert gas. One end of the pipe 101 is connected to a nitrogen gas supply source (not shown), and the other end is located inside the solvent bottle 110 in a space above the liquid surface of the solvent.

在溶劑瓶110與溶劑槽120之間，係設置有：配管102，作為將溶劑供給至溶劑槽120的溶劑供給管。該配管102之一端部，係被連接於溶劑槽120的例如底部，另一端部，係位於溶劑瓶110的底面附近。Between the solvent bottle 110 and the solvent tank 120 , a pipe 102 is provided as a solvent supply pipe for supplying a solvent to the solvent tank 120 . One end of the pipe 102 is connected to, for example, the bottom of the solvent tank 120 , and the other end is located near the bottom of the solvent bottle 110 .

在溶劑槽120之上部，係連接有作為彎管之配管103的一端部，其配管103之另一端部，係被連接於工廠排氣系統。One end of a pipe 103 as an elbow is connected to the top of the solvent tank 120, and the other end of the pipe 103 is connected to the factory exhaust system.

又，在溶劑槽120之上部，係設置有：配管104，作為供給惰性氣體之一例即氮氣的第2氣體供給管。該配管104，係一端部被連接於氮氣供給源(未圖示)，另一端部，係被連接於溶劑槽120的上部。Moreover, on the upper part of the solvent tank 120, the piping 104 is provided as the 2nd gas supply pipe which supplies nitrogen gas which is an example of an inert gas. One end of the pipe 104 is connected to a nitrogen gas supply source (not shown), and the other end is connected to the upper part of the solvent tank 120 .

在溶劑槽120與排氣管41之間，係設置有：配管105，作為將溶劑之液滴從溶劑槽120供給至排氣管41的液滴供給管。該配管105之一端部，係被連接於溶劑槽120的例如底部，另一端部，係被連接於排氣管41之閥V13的上游側。另外，配管105與排氣管41之連接位置，係閥V13的附近為較佳。藉此，容易使從配管105所供給之溶劑的液滴與沈積於閥V13的昇華物接觸，昇華物變得容易溶解。另外，配管105之內徑，係例如1~4mm。Between the solvent tank 120 and the exhaust pipe 41 , a pipe 105 is provided as a droplet supply pipe for supplying solvent droplets from the solvent tank 120 to the exhaust pipe 41 . One end of the pipe 105 is connected to, for example, the bottom of the solvent tank 120 , and the other end is connected to the upstream side of the valve V13 of the exhaust pipe 41 . In addition, the connection position between the pipe 105 and the exhaust pipe 41 is preferably near the valve V13. Thereby, the liquid droplet of the solvent supplied from the pipe 105 is easily brought into contact with the sublimate deposited on the valve V13, and the sublimate is easily dissolved. In addition, the inner diameter of the pipe 105 is, for example, 1 to 4 mm.

在上述配管101~105，係分別設置有閥V1~V6。詳細而言，在作為第1氣體供給管之配管101，係設置有作為第1閥的閥V1，在作為溶劑供給管之配管102，係設置有作為第2閥的閥V2。又，在作為彎管之配管103，係設置有作為第3閥的閥V3，在作為第2氣體供給管之配管104，係設置有作為第4閥的閥V4。而且，在作為液滴供給管之配管105，係設置有作為第5閥的閥V5與作為第6閥的閥V6。閥V5與閥V6，係相互隔開間隔而配置，閥V5，係被配置於配管105之溶劑槽120側的端部附近，閥V6，係被配置於於配管105之排氣管41側的端部附近。Valves V1 to V6 are respectively provided in the pipes 101 to 105 described above. Specifically, the piping 101 as the first gas supply pipe is provided with the valve V1 as the first valve, and the piping 102 as the solvent supply pipe is provided with the valve V2 as the second valve. In addition, the pipe 103 serving as an elbow is provided with a valve V3 serving as a third valve, and the pipe 104 serving as a second gas supply pipe is provided with a valve V4 serving as a fourth valve. In addition, a valve V5 as a fifth valve and a valve V6 as a sixth valve are provided in the pipe 105 as a droplet supply pipe. The valve V5 and the valve V6 are arranged at a distance from each other, the valve V5 is arranged near the end of the piping 105 on the side of the solvent tank 120, and the valve V6 is arranged on the side of the exhaust pipe 41 of the piping 105. near the end.

該些閥V1~V6，係雖例如亦可藉由操作員的操作予以開關，但在本實施形態中，係藉由控制部200予以開關控制。藉由如後述般適當地開關各閥V1~V6的方式，進行從溶劑瓶110向溶劑槽120之溶劑供給與從溶劑槽120向排氣管41的溶劑之液滴供給。These valves V1 to V6 can also be opened and closed by an operator's operation, for example, but in this embodiment, they are opened and closed by the control unit 200 . The solvent supply from the solvent bottle 110 to the solvent tank 120 and the solvent droplet supply from the solvent tank 120 to the exhaust pipe 41 are performed by appropriately opening and closing the respective valves V1 to V6 as described later.

在液滴供給機構100中，係設置有檢測溶劑槽120內的溶劑之液面的液面檢測部為較佳。在本實施形態中，係在溶劑槽120之側面部設置有作為液面檢測部的液面感測器130。在設置有液面感測器130的情況下，係在從溶劑瓶110向溶劑槽120供給溶劑時，例如可基於液面感測器130之檢測結果，停止來自溶劑瓶110的溶劑供給。藉此，可使向溶劑槽120的溶劑供給量穩定成固定量。另外，液面感測器130之具體構造，係不特別限定，只要是能進行溶劑槽120內之液面檢測的構造即可。使用例如具有發光部與受光部且因應受光部中之受光量的變化而切換ON與OFF之類型的液面感測器。In the droplet supply mechanism 100 , it is preferable to provide a liquid level detection unit that detects the liquid level of the solvent in the solvent tank 120 . In this embodiment, a liquid level sensor 130 as a liquid level detection unit is provided on the side surface of the solvent tank 120 . When the liquid level sensor 130 is provided, when the solvent is supplied from the solvent bottle 110 to the solvent tank 120 , for example, the supply of the solvent from the solvent bottle 110 can be stopped based on the detection result of the liquid level sensor 130 . Thereby, the amount of solvent supplied to the solvent tank 120 can be stabilized at a constant amount. In addition, the specific structure of the liquid level sensor 130 is not particularly limited, as long as it is a structure capable of detecting the liquid level in the solvent tank 120 . For example, a liquid level sensor is used that has a light-emitting part and a light-receiving part, and switches ON and OFF in response to changes in the amount of light received in the light-receiving part.

又，在設置有液面感測器130的情況下，如圖3所示般，亦可將溶劑槽120的一部分形成為例如毛細管狀，藉此，設置狹窄部121。而且，在該狹窄部121設置液面感測器130為較佳。狹窄部121，係指垂直於高度方向(垂直方向)的剖面中之溶劑槽120的剖面積比溶劑槽120的其他部位之剖面積小的部分。換言之，狹窄部121，係指流路比溶劑槽120之其他部位窄的部分。藉由在該狹窄部121配置液面感測器130的方式，液面高度之檢測精度會提升，可更精度良好地進行對溶劑槽120之溶劑的定量供給。In addition, when the liquid level sensor 130 is provided, as shown in FIG. 3 , a part of the solvent tank 120 may be formed, for example, in a capillary shape, whereby the narrow portion 121 may be provided. Furthermore, it is preferable to install a liquid level sensor 130 in the narrow portion 121 . The narrow portion 121 refers to a portion where the cross-sectional area of the solvent tank 120 in a cross-section perpendicular to the height direction (vertical direction) is smaller than that of other parts of the solvent tank 120 . In other words, the narrow portion 121 refers to a portion where the flow path is narrower than other portions of the solvent tank 120 . By arranging the liquid level sensor 130 in the narrow portion 121, the detection accuracy of the liquid level height is improved, and the quantitative supply of the solvent to the solvent tank 120 can be performed more accurately.

另外，在圖3所示之例子中，係雖狹窄部121被設置於溶劑槽120的中央部，但狹窄部121，係亦可因應溶劑槽120的尺寸或形狀來適當地變更。例如狹窄部121，係亦可被設置於溶劑槽120的上部。另一方面，在溶劑槽120之高度方向上的狹窄部121之形成區域較大的情況下，由於溶劑供給時之溶劑槽120內的壓力損失較大，因此，負荷會施加於氮氣的供給機構。因此，狹窄部121，係僅被設置於液面高度的檢測區域為較佳。In addition, in the example shown in FIG. 3 , although the narrow portion 121 is provided at the center of the solvent tank 120 , the narrow portion 121 may be appropriately changed according to the size or shape of the solvent tank 120 . For example, the narrow part 121 can also be disposed on the upper part of the solvent tank 120 . On the other hand, when the formation area of the narrow portion 121 in the height direction of the solvent tank 120 is large, since the pressure loss in the solvent tank 120 at the time of solvent supply is large, a load is applied to the nitrogen gas supply mechanism. . Therefore, it is preferable that the narrow portion 121 is provided only in the detection area of the liquid level.

在液滴供給機構100中，係設置有檢測配管105內的溶劑之液滴是否存在的液滴檢測部為較佳。如圖2所示般，在本實施形態中，係在溶劑槽120與閥V5之間設置有作為液滴檢測部的液滴檢測感測器140。在設置有液滴檢測感測器140的情況下，係在從溶劑槽120向排氣管41供給液滴時，可基於液滴檢測感測器140之檢測結果，將閥V5關閉。藉此，在對排氣管41之溶劑的液滴供給結束時，由於可更確實地使溶劑不殘存於配管105內，因此，可提高防爆性。In the droplet supply mechanism 100, it is preferable to provide a droplet detecting unit for detecting the presence or absence of a droplet of the solvent in the pipe 105. As shown in FIG. As shown in FIG. 2, in this embodiment, a droplet detection sensor 140 as a droplet detection unit is provided between the solvent tank 120 and the valve V5. When the droplet detection sensor 140 is provided, the valve V5 can be closed based on the detection result of the droplet detection sensor 140 when the liquid droplet is supplied from the solvent tank 120 to the exhaust pipe 41 . Thereby, when the supply of the solvent droplets to the exhaust pipe 41 is completed, since the solvent can be more reliably prevented from remaining in the pipe 105, the explosion-proof property can be improved.

又，在如本實施形態般地設置有閥V6的情況下，係基於液滴檢測感測器140之檢測結果，將閥V5與閥V6一起關閉為較佳。藉此，在對排氣管41之溶劑的液滴供給結束時，可將氮氣封入閥V5與閥V6之間的配管105內，並且亦可抑制從排氣管41內向配管105之排氣的流入。其結果，可進一步提高不將溶劑的液滴供給至排氣管41時之配管105中的防爆性。Also, when the valve V6 is provided as in the present embodiment, it is preferable to close the valve V5 together with the valve V6 based on the detection result of the droplet detection sensor 140 . Thereby, when the liquid droplet supply of the solvent to the exhaust pipe 41 is completed, nitrogen gas can be enclosed in the pipe 105 between the valve V5 and the valve V6, and the exhaustion from the exhaust pipe 41 to the pipe 105 can also be suppressed. inflow. As a result, the explosion-proof property in the piping 105 when no liquid droplets of the solvent are supplied to the exhaust pipe 41 can be further improved.

另外，液滴檢測感測器140之具體構造，係不特別限定，只要是能進行配管105內的溶劑之液滴檢測的構造即可。又，液滴檢測感測器140相對於配管105的設置部位亦不特別限定。In addition, the specific structure of the droplet detection sensor 140 is not particularly limited, as long as it is a structure capable of detecting a droplet of the solvent in the pipe 105 . Also, the installation position of the droplet detection sensor 140 with respect to the pipe 105 is not particularly limited.

在液滴供給機構100中，係設置測定排氣管41內之吸引壓力(負壓)的壓力測定部為較佳。在本實施形態中，係在排氣管41上的閥V13之上游側設置有作為壓力測定部的壓力計60。在設置有壓力計60的情況下，可監視排氣管41內的吸引壓力，並可於適當之時間點進行對排氣管41之溶劑的液滴供給。In the droplet supply mechanism 100, it is preferable to provide a pressure measurement unit that measures the suction pressure (negative pressure) in the exhaust pipe 41. In the present embodiment, a pressure gauge 60 as a pressure measuring unit is provided on the exhaust pipe 41 on the upstream side of the valve V13. When the pressure gauge 60 is provided, the suction pressure in the exhaust pipe 41 can be monitored, and the liquid droplet supply of the solvent to the exhaust pipe 41 can be performed at an appropriate timing.

如圖1所示般，設置有上述液滴供給機構100的加熱處理裝置1，係具備有控制部200。控制部200，係例如具備有CPU或記憶體等的電腦，且具有程式儲存部(未圖示)。在程式儲存部，係例如儲存有控制晶圓W的加熱處理或液滴供給機構100之動作的各種程式。另外，上述程式，係亦可為被記錄於電腦可讀取的記憶媒體H者，且亦可為從該記憶媒體H被安裝於控制部200者。記憶媒體H，係可為暫時記憶媒體或非暫時記憶媒體。程式之一部分或全部，係亦可由專用硬體(電路基板)來實現。As shown in FIG. 1 , the heat treatment apparatus 1 provided with the above-mentioned droplet supply mechanism 100 includes a control unit 200 . The control unit 200 is, for example, a computer including a CPU, a memory, and the like, and has a program storage unit (not shown). In the program storage unit, for example, various programs for controlling the heating process of the wafer W or the operation of the droplet supply mechanism 100 are stored. In addition, the above-mentioned program may be recorded in the computer-readable storage medium H, and may be installed in the control unit 200 from the storage medium H. The memory medium H can be a temporary memory medium or a non-temporary memory medium. Part or all of the program can also be realized by dedicated hardware (circuit board).

本實施形態之加熱處理裝置1，係如以上般地予以構成。其次，說明關於在該加熱處理裝置1中所進行的晶圓W之加熱處理與向排氣管41之溶劑的液滴供給方法。The heat treatment apparatus 1 of this embodiment is comprised as mentioned above. Next, the heat treatment of the wafer W performed in the heat treatment apparatus 1 and the method of supplying liquid droplets of the solvent to the exhaust pipe 41 will be described.

在進行加熱處理時，係首先對晶圓W塗佈包含有碳膜之前驅體的塗佈液，從而形成塗佈膜即SOC膜。其次，在使環形閘門5下降的狀態下，藉由搬送裝置(未圖示)使該晶圓W移動至熱板13之上方，並將晶圓W收授至升降銷15。此時，以使熱板13之表面溫度成為例如350℃的方式，控制加熱器14的輸出。此時，真空槽40，係處於與吸引管32之下端部連接的狀態。When heat treatment is performed, first, a coating liquid containing a carbon film precursor is applied to the wafer W to form an SOC film which is a coating film. Next, with the ring gate 5 lowered, the wafer W is moved above the hot plate 13 by a transfer device (not shown), and the wafer W is received and delivered to the lift pins 15 . At this time, the output of the heater 14 is controlled so that the surface temperature of the hot plate 13 becomes 350 degreeC, for example. At this time, the vacuum chamber 40 is in a state connected to the lower end of the suction pipe 32 .

而且，當晶圓W被載置於熱板13上時，則閥V13被開放，晶圓W，係藉由來自吸引口31之吸引被吸附保持於熱板13上。因此，即便為具有翹曲的晶圓W，亦可藉由來自吸引口31之吸引來矯正該翹曲，使晶圓W成為平坦狀態。藉此，可對晶圓W進行均勻的加熱處理。Furthermore, when the wafer W is placed on the hot plate 13 , the valve V13 is opened, and the wafer W is sucked and held on the hot plate 13 by suction from the suction port 31 . Therefore, even if the wafer W has a warp, the warp can be corrected by the suction from the suction port 31, and the wafer W can be brought into a flat state. Thereby, the wafer W can be uniformly heat-treated.

另外，進行吸引之吸引機構的吸引壓力，係可藉由閥V13之開合度等的調整來控制。因此，在吸引晶圓W的情況下，係例如亦可在加熱處理的初期時，使吸引力相對較強，在加熱處理的後期時，視為SOC膜已乾燥、硬化且使吸引力相對較弱或停止吸引本身。藉由像這樣地控制吸引力之強弱或作動本身的方式，可減少吸引量。In addition, the suction pressure of the suction mechanism can be controlled by adjusting the opening and closing degree of the valve V13. Therefore, in the case of attracting the wafer W, for example, at the initial stage of the heat treatment, the attraction force may be relatively strong, and at the later stage of the heat treatment, the SOC film may be regarded as having been dried and hardened, and the attraction force may be relatively strong. Weak or stop attracting itself. The amount of attraction can be reduced by controlling the strength of attraction or the movement itself like this.

而且，當晶圓W被吸附保持於熱板13上時，則環形閘門5上升而成為關閉處理容器2的狀態，藉此，區劃形成處理空間S。其次，閥V11、V12被開放，在進行來自中央排氣口4e、中央排氣管23之排氣與來自外周排氣口4d、排氣室4c、外周排氣管21之排氣的狀態下，對晶圓W進行加熱處理。Then, when the wafer W is adsorbed and held on the hot plate 13 , the ring shutter 5 is raised to close the processing container 2 , whereby the processing space S is partitioned and formed. Next, the valves V11 and V12 are opened, and the exhaust from the central exhaust port 4e and the central exhaust pipe 23 and the exhaust from the outer peripheral exhaust port 4d, exhaust chamber 4c, and outer peripheral exhaust pipe 21 are performed. , performing heat treatment on the wafer W.

在加熱處理的期間，促進晶圓W上的塗佈膜即SOC膜中之溶劑的揮發，並且藉由塗佈膜中之交聯劑進行交聯反應。在該期間，塗佈膜中之交聯劑或低分子成分雖揮發，但在加熱處理後半，係產生許多昇華物。該昇華物之一部分，係雖從前述中央排氣口4e及外周排氣口4d被排出，但剩餘的昇華物，係從晶圓W的下面與熱板13之間的間隙朝吸引口31內流入。此原因在於，在熱板13之表面，係形成有用以創造出微小空隙之被稱為間隙銷、接近銷的微小凸部，又，來自吸引口31之吸引力，係比來自中央排氣管23、外周排氣口4d的排氣大。從吸引口31流入吸引管32內之昇華物，係經由真空槽40流入排氣管41且被排出至外部。During the heat treatment, volatilization of the solvent in the coating film on the wafer W, that is, the SOC film is promoted, and a crosslinking reaction is performed by the crosslinking agent in the coating film. During this period, although the cross-linking agent or low-molecular components in the coating film volatilize, many sublimates are produced in the second half of the heat treatment. A part of the sublimated matter is discharged from the central exhaust port 4e and the peripheral exhaust port 4d, but the remaining sublimated matter is discharged from the gap between the lower surface of the wafer W and the hot plate 13 into the suction port 31. inflow. The reason for this is that, on the surface of the hot plate 13, there are formed tiny protrusions called clearance pins or proximity pins to create tiny gaps, and the suction from the suction port 31 is stronger than that from the central exhaust pipe. 23. The exhaust of the peripheral exhaust port 4d is large. The sublimated matter flowing into the suction pipe 32 from the suction port 31 flows into the exhaust pipe 41 through the vacuum chamber 40 and is discharged to the outside.

其次，參閱圖4~圖7，說明關於將溶劑之液滴供給至排氣管41的方法。另外，圖5~圖7所示之實線的箭頭，係表示溶劑的流動，虛線的箭頭，係表示氮氣的流動。Next, referring to FIGS. 4 to 7 , the method of supplying the liquid droplets of the solvent to the exhaust pipe 41 will be described. In addition, the arrows of the solid line shown in FIGS. 5 to 7 indicate the flow of the solvent, and the arrows of the broken line indicate the flow of the nitrogen gas.

向排氣管41之溶劑的液滴供給，係在昇華物沈積於閥V13而晶圓W之吸引保持力下降時被予以實施。吸引保持力之下降，係例如基於以圖2所示之壓力計60所測定的排氣管41內之吸引壓力來予以判斷。詳細而言，藉由以壓力計60所測定的吸引壓力是否比晶圓W之吸引保持所需要的預定壓力小來予以判斷。而且，在以壓力計60所測定的吸引壓力減小至預定壓力的情況下，係自動開始將溶劑之液滴供給至排氣管41的工程。又，作為其他開始方法，亦可於例如預定片數的晶圓W之加熱處理結束的階段，開始將溶劑之液滴供給至排氣管41的工程。另外，對排氣管41之溶劑的液滴供給，係為了不對加熱處理中之晶圓W的吸引保持力造成影響，而在從晶圓W之加熱處理結束後至下一晶圓W之加熱處理開始為止的期間予以實施。The droplet supply of the solvent to the exhaust pipe 41 is carried out when the sublime is deposited on the valve V13 and the attraction and holding force of the wafer W decreases. The reduction of the suction holding force is judged based on, for example, the suction pressure in the exhaust pipe 41 measured by the pressure gauge 60 shown in FIG. 2 . Specifically, it is judged by whether or not the suction pressure measured by the pressure gauge 60 is lower than a predetermined pressure required for the suction and holding of the wafer W. Then, when the suction pressure measured by the pressure gauge 60 decreases to a predetermined pressure, the process of supplying the liquid droplets of the solvent to the exhaust pipe 41 is automatically started. In addition, as another starting method, for example, the process of supplying the liquid droplets of the solvent to the exhaust pipe 41 may be started at the stage when the heat treatment of a predetermined number of wafers W is completed. In addition, the droplet supply of the solvent to the exhaust pipe 41 is performed from the end of the heat treatment of the wafer W to the heating of the next wafer W so as not to affect the attraction and retention force of the wafer W being heated. It is carried out during the period from the start of processing.

如圖4所示般，在溶劑的液滴被供給至排氣管41之前，係在溶劑槽120的內部未儲存溶劑而填充有氮氣。此時，液滴供給機構100之各閥V1~V6，係處於全部關閉的狀態。As shown in FIG. 4 , before the liquid droplets of the solvent are supplied to the exhaust pipe 41 , the inside of the solvent tank 120 is filled with nitrogen gas without storing the solvent. At this time, the valves V1 to V6 of the droplet supply mechanism 100 are all closed.

其次，如圖5所示般，將閥V1、閥V2及閥V3開啟。藉此，氮氣從配管101被壓送至溶劑瓶110的內部，儲存於溶劑瓶110之溶劑會從配管102的下端被送至溶劑槽120。此時，被填充於溶劑槽120之氮氣，係從配管103被排出至外部。Next, as shown in FIG. 5, the valve V1, the valve V2, and the valve V3 are opened. Thereby, nitrogen gas is pumped into the solvent bottle 110 from the pipe 101 , and the solvent stored in the solvent bottle 110 is sent to the solvent tank 120 from the lower end of the pipe 102 . At this time, the nitrogen gas filled in the solvent tank 120 is discharged to the outside through the pipe 103 .

而且，在溶劑槽120內的溶劑之儲存量達到預定量後，將閥V1、閥V2及閥V3關閉，停止從溶劑瓶110向溶劑槽120的溶劑供給。在本實施形態中，係在藉由液面感測器130檢測到溶劑槽120內之溶劑的液面時，從液面感測器130朝向控制部200輸出ON信號。控制部200，係基於該信號，朝向閥V1、閥V2及閥V3輸出控制信號而各閥V1~V3被關閉。Then, after the storage amount of the solvent in the solvent tank 120 reaches a predetermined amount, the valve V1, the valve V2, and the valve V3 are closed, and the supply of the solvent from the solvent bottle 110 to the solvent tank 120 is stopped. In this embodiment, when the liquid level of the solvent in the solvent tank 120 is detected by the liquid level sensor 130 , an ON signal is output from the liquid level sensor 130 to the control unit 200 . Based on the signal, the control unit 200 outputs a control signal to the valve V1, the valve V2, and the valve V3 to close the valves V1 to V3.

藉由從上述溶劑瓶110向溶劑槽120之溶劑的供給，在溶劑槽120之內部，係例如儲存有1ml以下之極少量的溶劑。By supplying the solvent from the above-mentioned solvent bottle 110 to the solvent tank 120 , a very small amount of solvent of, for example, 1 ml or less is stored inside the solvent tank 120 .

其次，如圖6所示般，將閥V4、閥V5及閥V6開啟。藉此，氮氣從配管104被壓送至溶劑槽120的內部，儲存於溶劑槽120之溶劑會被推出至與溶劑槽120之底面連接的配管105。Next, as shown in FIG. 6, the valve V4, the valve V5, and the valve V6 are opened. Thereby, nitrogen gas is pumped into the solvent tank 120 from the piping 104 , and the solvent stored in the solvent tank 120 is pushed out to the piping 105 connected to the bottom surface of the solvent tank 120 .

其後，如圖7所示般，儲存於溶劑槽120內的所有溶劑會被推出至配管105。推出之溶劑，係與持續被供給至溶劑槽120的氮氣一起流動於配管105內並到達排氣管41。在此，由於被供給至排氣管41之溶劑，係儲存於溶劑槽120之極少量的溶劑，因此，流入排氣管41時，係例如作為1滴~3滴之液滴狀的溶劑而供給。Thereafter, as shown in FIG. 7 , all the solvent stored in the solvent tank 120 is pushed out to the pipe 105 . The released solvent flows in the pipe 105 together with the nitrogen gas continuously supplied to the solvent tank 120 and reaches the exhaust pipe 41 . Here, since the solvent supplied to the exhaust pipe 41 is a very small amount of solvent stored in the solvent tank 120, when it flows into the exhaust pipe 41, it is, for example, 1 to 3 droplets of the solvent. supply.

而且，供給至排氣管41之溶劑的液滴到達閥V13，藉此，沈積於閥V13的昇華物會溶解。其後，由於使昇華物溶解之溶劑的液滴為極少量，故全部揮發，並藉由吸引機構50被排出到外部。另外，在向排氣管41之溶劑供給量較多且被供給至排氣管41的溶劑之形態並非液滴狀的情況下，係由於溶劑的全量揮發，因此，無法以吸引機構50排出溶劑。在該情況下，必需設置將排放管(未圖示)連接於排氣管41等的排液構造。另一方面，在本實施形態之液滴供給機構100中，係由於被供給至排氣管41之溶劑的液滴全部揮發，因此，不需要排液構造。Then, the liquid droplets of the solvent supplied to the exhaust pipe 41 reach the valve V13, whereby the sublimated product deposited on the valve V13 is dissolved. Thereafter, since the liquid droplets of the solvent for dissolving the sublimate are extremely small, all of them are volatilized, and are discharged to the outside by the suction mechanism 50 . In addition, when the amount of solvent supplied to the exhaust pipe 41 is large and the form of the solvent supplied to the exhaust pipe 41 is not in the form of droplets, the solvent cannot be discharged by the suction mechanism 50 because the entire amount of the solvent evaporates. . In this case, it is necessary to provide a discharge structure for connecting a discharge pipe (not shown) to the exhaust pipe 41 and the like. On the other hand, in the droplet supply mechanism 100 of this embodiment, since all the droplets of the solvent supplied to the exhaust pipe 41 are volatilized, a liquid discharge structure is not required.

又，在將溶劑之液滴供給至排氣管41時，係雖亦可開放閥V13，但當「在開放了閥V13的狀態下，將液滴供給機構100之閥V4~V6開放」時，則有時亦需要用以控制吸引排氣系統之負壓的額外構造。因此，為了不需要像這樣的額外構造，係在將溶劑之液滴供給至排氣管41時關閉閥V13為較佳。Also, when the liquid droplets of the solvent are supplied to the exhaust pipe 41, the valve V13 may also be opened, but when "the valves V4 to V6 of the liquid drop supply mechanism 100 are opened while the valve V13 is open" , then sometimes an additional structure for controlling the negative pressure of the suction exhaust system is also required. Therefore, it is preferable to close the valve V13 when supplying the liquid droplets of the solvent to the exhaust pipe 41 so that such an additional structure is unnecessary.

又，在使沈積於閥V13之昇華物有效地溶解的觀點中，係閥V13中之溶劑的流路朝向垂直方向為較佳。藉此，在關閉閥V13而將溶劑之液滴滴下於排氣管41時，可在閥V13內的流路暫時儲存溶劑，並可促進昇華物之溶解。In addition, from the viewpoint of effectively dissolving the sublimate deposited on the valve V13, it is preferable that the flow path of the solvent in the valve V13 is oriented vertically. Thereby, when the valve V13 is closed and the solvent droplet is dripped to the exhaust pipe 41, the solvent can be temporarily stored in the flow path in the valve V13, and the dissolution of the sublimate can be accelerated.

如上述般，在將溶劑之液滴供給至排氣管41後，將閥V4、閥V5及閥V6關閉。將各閥V4~V6關閉之時間點，係例如為了向排氣管41之液滴供給，雖亦可為在開放各閥V4~V6後經過了預定時間的時間點，但在本實施形態中，係基於液滴檢測感測器140之檢測結果來決定時間點。詳細而言，當在液滴檢測感測器140未輸出ON信號之時間超過了預定時間(例如5秒)的情況下，從控制部200朝向閥V4、閥V5及閥V6輸出控制信號而各閥V4~V6被關閉。As described above, after the liquid droplets of the solvent are supplied to the exhaust pipe 41, the valve V4, the valve V5, and the valve V6 are closed. The timing at which the valves V4 to V6 are closed is, for example, for liquid droplet supply to the exhaust pipe 41, and it may be a timing at which a predetermined time has elapsed after the valves V4 to V6 are opened, but in this embodiment , the time point is determined based on the detection result of the droplet detection sensor 140 . Specifically, when the droplet detection sensor 140 does not output an ON signal for a predetermined period of time (for example, 5 seconds), control signals are output from the control unit 200 to the valve V4, the valve V5, and the valve V6. Valves V4~V6 are closed.

如上述般，藉由閥V4~V6被關閉的方式，各閥V1~V6之開關狀態會返回到圖4所示的狀態，且將溶劑之液滴供給至排氣管41的工程便結束。其後，開始進行下一晶圓W之加熱處理的工程。As mentioned above, by closing the valves V4-V6, the switching states of the valves V1-V6 return to the state shown in FIG. 4, and the process of supplying the solvent droplets to the exhaust pipe 41 is completed. Thereafter, the process of heating the next wafer W is started.

如以上般，在本實施形態之加熱處理裝置1中，係設置有液滴供給機構100，藉此，可將溶劑之液滴供給至吸引排氣系統的排氣管41。藉此，可使沈積於被設置在排氣管41之閥V13的昇華物溶解，並可抑制閥V13的堵塞。其結果，吸引排氣系統之吸引壓力回復，可適當地進行加熱處理時之晶圓W的吸引保持。As mentioned above, in the heat processing apparatus 1 of this embodiment, the droplet supply mechanism 100 is provided, and the liquid droplet of a solvent can be supplied to the exhaust pipe 41 of a suction exhaust system by this. Thereby, the sublimate deposited on the valve V13 provided in the exhaust pipe 41 can be dissolved, and clogging of the valve V13 can be suppressed. As a result, the suction pressure of the suction exhaust system is restored, and the suction and holding of the wafer W during heat processing can be appropriately performed.

又，以往，係雖在因昇華物所致之閥V13的堵塞發生之前，必需定期地進行開關閥之零件更換等的維護，但根據本實施形態之加熱處理裝置1，可使閥V13的昇華物溶解。因此，可使進行零件更換等的維護之頻率減少且生產率提升。Also, in the past, before the clogging of the valve V13 caused by sublimation, it was necessary to periodically perform maintenance such as parts replacement of the on-off valve, but according to the heat treatment apparatus 1 of this embodiment, the sublimation of the valve V13 can be reduced. matter dissolves. Therefore, the frequency of maintenance such as parts replacement can be reduced and productivity can be improved.

本揭示之液滴供給機構，係除了用以吸引保持被加熱處理之晶圓W的吸引排氣系統以外，例如亦可應用於半導體製造製程中所使用的固化乾燥裝置或昇華乾燥裝置之排氣系統。亦即，本揭示之液滴供給機構，係可應用於因晶圓W之加熱而產生昇華物的加熱處理裝置之排氣系統。The droplet supply mechanism disclosed in the present disclosure is not only a suction and exhaust system used to attract and hold the heated wafer W, but also can be applied to the exhaust of solidification drying equipment or sublimation drying equipment used in the semiconductor manufacturing process, for example. system. In other words, the droplet supply mechanism of the present disclosure can be applied to an exhaust system of a heat treatment device that generates sublimates due to heating of the wafer W.

吾人應理解本次所揭示之實施形態，係在所有方面皆為例示而非限制性者。上述實施形態，係亦可在不脫離添附之申請專利範圍及其主旨的情況下，以各種形態進行省略、置換、變更。It should be understood that the embodiments disclosed this time are illustrative and non-restrictive in all respects. The above-mentioned embodiments can also be omitted, replaced, and changed in various forms without departing from the scope of the appended patent application and its gist.

另外，如以下般之構成亦屬於本揭示的技術範圍。 (1)一種程式，該程式，係以使加熱處理裝置執行加熱處理方法的方式，在控制該加熱處理裝置之控制部的電腦上動作，該加熱處理方法，係具有：對前述基板進行加熱處理的加熱處理工程；及將溶劑之液滴供給至流入有因前述基板之加熱而產生的昇華物之排氣管的工程，在將溶劑之液滴供給至前述排氣管的工程中，在被設置於前述排氣管之開關閥的上游側，將前述溶劑之液滴供給至該排氣管。 In addition, the following configurations also belong to the technical scope of the present disclosure. (1) A program that operates on a computer that controls a control unit of the heat treatment device in such a manner that the heat treatment device executes a heat treatment method, the heat treatment method comprising: performing heat treatment on the aforementioned substrate and the process of supplying the liquid droplets of the solvent to the exhaust pipe in which the sublimate generated by the heating of the aforementioned substrate flows, in the process of supplying the liquid droplets of the solvent to the aforementioned exhaust pipe, in the process of being It is provided on the upstream side of the on-off valve of the exhaust pipe, and the liquid droplets of the solvent are supplied to the exhaust pipe.

1:加熱處理裝置 14:加熱器 41:排氣管 100:液滴供給機構 105:配管 H:記憶媒體 V13:閥 W:晶圓 1: Heat treatment device 14: heater 41: exhaust pipe 100: Droplet supply mechanism 105: Piping H: memory media V13: Valve W: Wafer

[圖1]從側面觀看而示意地表示本實施形態的加熱處理裝置之構成的說明圖。 [圖2]示意地表示本實施形態之溶劑的液滴供給機構之構成的說明圖。 [圖3]表示溶劑儲存部之其他形狀例的圖。 [圖4]用於說明將溶劑的液滴供給至排氣管之工程的說明圖。 [圖5]用於說明將溶劑的液滴供給至排氣管之工程的說明圖。 [圖6]用於說明將溶劑的液滴供給至排氣管之工程的說明圖。 [圖7]用於說明將溶劑的液滴供給至排氣管之工程的說明圖。 [ Fig. 1] Fig. 1 is an explanatory diagram schematically showing the configuration of a heat treatment apparatus according to the present embodiment viewed from the side. [ Fig. 2] Fig. 2 is an explanatory diagram schematically showing the configuration of a solvent droplet supply mechanism according to the present embodiment. [ Fig. 3 ] A diagram showing another shape example of a solvent storage part. [ Fig. 4 ] An explanatory diagram for explaining a process of supplying liquid droplets of a solvent to an exhaust pipe. [ Fig. 5 ] An explanatory diagram for explaining a process of supplying liquid droplets of a solvent to an exhaust pipe. [ Fig. 6 ] An explanatory diagram for explaining a process of supplying liquid droplets of a solvent to an exhaust pipe. [ Fig. 7 ] An explanatory diagram for explaining a process of supplying liquid droplets of a solvent to an exhaust pipe.

1:加熱處理裝置 1: Heat treatment device

40:真空槽 40: vacuum tank

41:排氣管 41: exhaust pipe

50:吸引機構 50: Attract agencies

60:壓力計 60: pressure gauge

100:液滴供給機構 100: Droplet supply mechanism

101:配管 101: Piping

102:配管 102: Piping

103:配管 103: Piping

104:配管 104: Piping

105:配管 105: Piping

110:溶劑瓶 110: solvent bottle

120:溶劑槽 120: solvent tank

130:液面感測器 130: liquid level sensor

140:液滴檢測感測器 140: Droplet detection sensor

V1:閥 V1: valve

V2:閥 V2: valve

V3:閥 V3: valve

V4:閥 V4: valve

V5:閥 V5: valve

V6:閥 V6: valve

V13:閥 V13: Valve

W:晶圓 W: Wafer

Claims (13)

一種加熱處理裝置，係對基板進行加熱處理，該加熱處理裝置，其特徵係，具備有： 加熱部，用以加熱前述基板； 排氣管，流入有因前述基板之加熱而產生的昇華物； 開關閥，被設置於前述排氣管；及 液滴供給機構，將溶劑的液滴供給至前述排氣管， 前述液滴供給機構，係在前述開關閥之上游側具有被連接於前述排氣管的液滴供給管。 A heat treatment device is used for heat treatment of a substrate. The heat treatment device is characterized in that it has: a heating unit for heating the aforementioned substrate; The exhaust pipe flows into the sublimate produced by the heating of the aforementioned substrate; an on-off valve disposed on the aforementioned exhaust pipe; and a liquid drop supply mechanism for supplying liquid droplets of the solvent to the aforementioned exhaust pipe, The droplet supply mechanism includes a droplet supply pipe connected to the exhaust pipe on the upstream side of the on-off valve. 如請求項1之加熱處理裝置，其中， 前述排氣管與前述液滴供給管之連接位置，係位於前述開關閥的附近。 Such as the heat treatment device of claim 1, wherein, The connecting position of the aforementioned exhaust pipe and the aforementioned droplet supply pipe is located near the aforementioned on-off valve. 如請求項1或2之加熱處理裝置，其中， 前述液滴供給機構，係具備有： 溶劑儲存部，連接有前述液滴供給管； 溶劑供給部，將前述溶劑供給至前述溶劑儲存部； 第1氣體供給管，將惰性氣體供給至前述溶劑供給部； 溶劑供給管，連接前述溶劑儲存部與前述溶劑供給部； 彎管，被連接於前述溶劑儲存部；及 第2氣體供給管，將惰性氣體供給至前述溶劑儲存部， 在前述第1氣體供給管設置有第1閥，在前述溶劑供給管設置有第2閥，在前述彎管設置有第3閥，在前述第2氣體供給管設置有第4閥，在前述液滴供給管設置有第5閥。 The heat treatment device according to claim 1 or 2, wherein, The aforementioned droplet supply mechanism has: The solvent storage part is connected with the aforementioned liquid droplet supply pipe; a solvent supply unit that supplies the solvent to the solvent storage unit; a first gas supply pipe for supplying an inert gas to the solvent supply part; a solvent supply pipe, connecting the aforementioned solvent storage part and the aforementioned solvent supply part; an elbow connected to the aforementioned solvent storage; and The second gas supply pipe supplies the inert gas to the solvent storage part, A first valve is provided on the first gas supply pipe, a second valve is provided on the solvent supply pipe, a third valve is provided on the elbow pipe, a fourth valve is provided on the second gas supply pipe, and a valve is provided on the solvent supply pipe. The drip supply tube is provided with a 5th valve. 如請求項3之加熱處理裝置，其中，具備有： 控制部，控制前述液滴供給機構， 前述控制部，係被構成為執行如下述控制： 在將前述溶劑從前述溶劑供給部供給至前述溶劑儲存部的工程中，係開啟前述第1閥、前述第2閥、前述第3閥並關閉前述第4閥及前述第5閥，且從前述第1氣體供給管供給惰性氣體， 在將前述溶劑之液滴從前述溶劑儲存部供給至前述排氣管的工程中，係關閉前述第2閥及前述第3閥並開啟前述第4閥及前述第5閥，且從前述第2氣體供給管供給惰性氣體。 Such as the heat treatment device of claim 3, wherein, there are: a control unit that controls the aforementioned droplet supply mechanism, The aforementioned control unit is configured to perform the following controls: In the process of supplying the solvent from the solvent supply part to the solvent storage part, the first valve, the second valve, and the third valve are opened, the fourth valve and the fifth valve are closed, and the The first gas supply pipe supplies inert gas, In the process of supplying the droplets of the solvent from the solvent storage part to the exhaust pipe, the second valve and the third valve are closed, the fourth valve and the fifth valve are opened, and the The gas supply pipe supplies inert gas. 如請求項4之加熱處理裝置，其中， 前述控制部，係被構成為執行「在將前述溶劑之液滴供給至前述排氣管的工程中，關閉前述開關閥」的控制。 Such as the heat treatment device of claim 4, wherein, The control unit is configured to perform control of "closing the on-off valve during the process of supplying the liquid droplets of the solvent to the exhaust pipe". 如請求項4之加熱處理裝置，其中， 前述液滴供給機構，係具備有： 液面檢測部，檢測儲存於前述溶劑儲存部的前述溶劑之液面， 前述控制部，係被構成為執行「在將前述溶劑供給至前述溶劑儲存部的工程中，當以前述液面檢測部檢測到前述溶劑之液面時，關閉前述第1閥、前述第2閥及前述第3閥」的控制。 Such as the heat treatment device of claim 4, wherein, The aforementioned droplet supply mechanism has: a liquid level detection unit for detecting the liquid level of the solvent stored in the solvent storage unit, The control unit is configured to perform “closing the first valve and the second valve when the liquid level of the solvent is detected by the liquid level detection unit during the process of supplying the solvent to the solvent storage unit. And the control of the aforementioned third valve". 如請求項6之加熱處理裝置，其中， 前述溶劑儲存部，係具有： 狹窄部，流路比該溶劑儲存部中之其他部位窄， 前述液面檢測部，係被配置於前述狹窄部。 Such as the heat treatment device of claim 6, wherein, The aforementioned solvent storage unit has: Narrow part, the flow path is narrower than other parts in the solvent storage part, The liquid level detection unit is disposed on the narrowed portion. 如請求項4之加熱處理裝置，其中， 前述液滴供給機構，係具備有： 液滴檢測部，檢測前述液滴供給管內的前述溶劑之液滴是否存在， 前述控制部，係被構成為執行「在將前述溶劑之液滴供給至前述排氣管的工程中，當在前述液滴檢測部未檢測到前述溶劑的時間超過了預定時間時，關閉前述第4閥及前述第5閥」的控制。 Such as the heat treatment device of claim 4, wherein, The aforementioned droplet supply mechanism has: a liquid drop detection unit detects whether there is a liquid drop of the solvent in the liquid drop supply pipe, The aforementioned control unit is configured to execute “during the process of supplying the liquid droplets of the aforementioned solvent to the aforementioned exhaust pipe, when the time for which the aforementioned solvent is not detected by the aforementioned liquid drop detection unit exceeds a predetermined time, turn off the aforementioned first 4 valves and the control of the aforementioned 5th valve". 如請求項4之加熱處理裝置，其中， 前述液滴供給機構，係具有： 第6閥，被設置於前述液滴供給管之前述第5閥的下游側， 前述控制部，係被構成為執行「在將前述溶劑之液滴供給至前述排氣管的工程中，將前述第5閥與前述第6閥一起關閉」的控制。 Such as the heat treatment device of claim 4, wherein, The aforementioned droplet supply mechanism has: The 6th valve is arranged on the downstream side of the aforementioned 5th valve of the aforementioned droplet supply pipe, The control unit is configured to perform control of "closing the fifth valve together with the sixth valve during the process of supplying the liquid droplets of the solvent to the exhaust pipe". 如請求項4之加熱處理裝置，其中，具備有： 壓力測定部，測定前述排氣管內的吸引壓力， 前述控制部，係被構成為執行「在以前述壓力測定部所測定到的吸引壓力小至預定壓力後，將前述溶劑供給至前述溶劑儲存部」的工程。 Such as the heat treatment device of claim 4, wherein, there are: a pressure measuring unit for measuring the suction pressure in the exhaust pipe, The control unit is configured to perform a process of “supplying the solvent to the solvent storage unit after the suction pressure measured by the pressure measurement unit is reduced to a predetermined pressure”. 如請求項1或2之加熱處理裝置，其中，具有： 載置部，載置前述基板；及 吸引管，貫通前述載置部，吸引前述基板， 前述吸引管，係被連接於前述排氣管。 The heat treatment device according to claim 1 or 2, wherein: a mounting section for mounting the aforementioned substrate; and a suction pipe that penetrates the mounting portion and sucks the substrate, The aforementioned suction pipe is connected to the aforementioned exhaust pipe. 一種加熱處理方法，係對基板進行加熱處理，該加熱處理方法，其特徵係，具有： 對前述基板進行加熱處理的加熱處理工程；及 將溶劑之液滴供給至流入有因前述基板之加熱而產生的昇華物之排氣管的工程， 在將溶劑之液滴供給至前述排氣管的工程中，在被設置於前述排氣管之開關閥的上游側，將前述溶劑之液滴供給至該排氣管。 A heat treatment method is to heat a substrate, the heat treatment method is characterized in that it has: Heat treatment works for heat treatment of the aforementioned substrates; and The process of supplying the liquid droplets of the solvent to the exhaust pipe flowing into the sublimation product generated by the heating of the aforementioned substrate, In the process of supplying the liquid droplets of the solvent to the exhaust pipe, the liquid droplets of the solvent are supplied to the exhaust pipe on the upstream side of the on-off valve provided in the exhaust pipe. 一種可讀取的電腦記憶媒體，其特徵係， 記憶有程式，該程式，係以使加熱處理裝置執行加熱處理方法的方式，在控制該加熱處理裝置之控制部的電腦上動作，該加熱處理方法，係具有：對基板進行加熱處理的加熱處理工程；及將溶劑之液滴供給至流入有因前述基板之加熱而產生的昇華物之排氣管的工程，在將溶劑之液滴供給至前述排氣管的工程中，在被設置於前述排氣管之開關閥的上游側，將前述溶劑之液滴供給至該排氣管。 A readable computer memory medium characterized by, A program is memorized, and the program operates on a computer controlling a control unit of the heat treatment device in such a manner that the heat treatment device executes a heat treatment method. The heat treatment method includes: heat treatment of a substrate. process; and the process of supplying the liquid droplets of the solvent to the exhaust pipe that flows into the sublimate produced by the heating of the aforementioned substrate, in the process of supplying the liquid droplets of the solvent to the aforementioned exhaust pipe, the On the upstream side of the opening and closing valve of the exhaust pipe, the liquid droplets of the solvent are supplied to the exhaust pipe.
TW111140234A 2021-11-05 2022-10-24 Heat treatment apparatus, heat treatment method, and computer recording medium TW202324499A (en)

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