JP4833140B2 - Sublimation removal device - Google Patents

Description

  The present invention relates to a sublimate removal apparatus for removing sublimate in exhaust gas discharged from a substrate processing apparatus.

  For example, in photolithography processing in the manufacture of semiconductor devices, after heat treatment (pre-baking) for evaporating the solvent in the resist solution applied to the surface of a semiconductor wafer (hereinafter referred to as “wafer”), or after pattern exposure. , Heat treatment to promote chemical reaction of resist film on wafer (post-exposure baking), heat treatment to improve chemical resistance by curing resist film on wafer after pattern development (post-baking) Various heat treatments are performed.

  In the heat treatment apparatus in which these heat treatments are performed, sublimates are generated from, for example, a resist film during heating. The sublimate is discharged to an exhaust means such as an ejector through an exhaust pipe connected to the heat treatment apparatus together with the atmosphere in the heat treatment apparatus. However, since the temperature in the exhaust pipe is lower than the temperature in the heat treatment apparatus, the sublimate may adhere to the exhaust pipe or the exhaust means. The sublimate adhering in this way reduces the exhaust flow rate.

  Therefore, conventionally, it has been proposed to provide a sublimate removal device in the exhaust pipe to collect the sublimate. For example, a mesh-shaped collecting member is installed inside the sublimation removal apparatus. And the atmosphere in a heat processing apparatus is discharged | emitted as exhaust gas from an exhaust pipe, the exhaust gas containing a sublimate passes a sublimate removal apparatus, and a sublimate is removed by a collection member (patent document 1).

JP 2003-347198 A

  However, since the collected sublimate adheres to the collection member and the collection member is clogged, it is necessary to frequently maintain the sublimation removal apparatus. And since the heat processing apparatus cannot be used at the time of maintenance of this sublimate removal apparatus, the operation rate of the heat processing apparatus was deteriorated.

  The present invention has been made in view of the above points, and it is an object of the present invention to reduce the maintenance frequency of the sublimate removal apparatus for removing the sublimate discharged from the substrate processing apparatus and to improve the operating rate of the processing apparatus. And

  In order to achieve the above object, the present invention provides a sublimate removal apparatus for removing sublimate in exhaust gas discharged from a substrate processing apparatus, which is disposed in a sealed container for storing a cleaning liquid, and in the container. A spherical filter, an exhaust gas inflow part for injecting exhaust gas from the upper part of the container toward the filter, a cleaning liquid supply part for supplying a cleaning liquid from the upper part of the container toward the filter, and an exhaust gas inflow in the container The exhaust gas flowing in from the part is provided below the location where it collides with the filter, the exhaust gas outflow part flowing out the exhaust gas in the container, the cleaning liquid discharge part provided below the exhaust gas outflow part in the container, The material of the filter is made of a material that allows gas to pass but does not allow solids and liquids to pass, and the filter is rotatable in a container. And the lower portion of this filter is characterized in that was immersed in the cleaning liquid stored in the container.

  According to the present invention, since the filter allows gas to pass but does not allow solids to pass through, when the exhaust gas flowing from the exhaust gas inflow portion toward the filter passes through the filter and is discharged from the exhaust gas outflow portion, the sublimate in the exhaust gas Is collected on the filter surface and removed from the exhaust gas. And while exhaust gas is flowing in this way, the cleaning liquid is supplied from the cleaning liquid supply section into the container. The cleaning liquid is supplied to the surface of the filter, and the filter rotates due to the collision of the cleaning liquid. As the filter rotates, the sublimate adhering to the surface of the filter moves downward. Since the filter to which the sublimate has adhered is immersed in the cleaning liquid below the exhaust gas outflow portion, the sublimated substance is removed from the surface of the filter into the cleaning liquid. Then, the washed filter rotates upward, and the sublimate in the exhaust gas can be collected and removed again. As described above, the collected sublimate can be washed away with the cleaning liquid while the sublimate in the exhaust gas is collected by the filter. Therefore, the filter is not clogged, and the maintenance frequency of the filter can be reduced. And the operation rate of the processing apparatus of a board | substrate can be improved.

  Further, since the filter has a spherical shape, the filter can be rotated in multiple directions, sublimates can be removed over the entire spherical surface, and the entire spherical surface can be cleaned with a cleaning liquid. Therefore, the filter maintenance cycle can be shortened.

  Above the exhaust gas outflow portion in the container, the filter may be in annular contact with the inner peripheral portion of the side surface of the container. As a result, while sublimating the sublimate adhering to the filter surface, the sublimate scraped off by the rotation of the filter can be dropped downward to remove the sublimate.

  A stopper for preventing the filter from floating may be provided above the exhaust gas outflow portion in the container. As a result, the filter can be prevented from floating above the cleaning liquid, and the sublimate adhering to the filter can be reliably washed away. In addition, the sublimated material adhering to the surface of the filter can be removed by scraping with a stopper. The stopper preferably has a shape projecting in an annular shape from the inner periphery to the inner side of the container, whereby the filter can be reliably prevented from rising.

  The cleaning liquid supplied from the cleaning liquid supply unit may collide with the surface of the filter by shifting from the vertical center axis of the filter. This ensures that the filter can be rotated in multiple directions.

  A mist trap that captures moisture in the exhausted exhaust gas may be provided in the outflow path that continues from the exhaust gas outflow portion.

  The discharge path following the exhaust gas outflow portion may be provided upward from the exhaust gas outflow portion. Thus, even if the cleaning liquid in the container enters the exhaust gas outflow path, the cleaning liquid does not flow downstream of the exhaust gas outflow path.

  The cleaning liquid discharged from the cleaning liquid discharge unit may be circulated to the cleaning liquid supply unit. Thus, for example, a filter in the cleaning liquid is provided between the cleaning liquid discharge unit and the cleaning liquid supply unit to remove the sublimate in the cleaning liquid, and the cleaning liquid can be reused. Can be reduced.

As a reference example , instead of the spherical filter, a cylindrical filter may be used, and the cylindrical filter may be disposed horizontally in the container and rotatable in the circumferential direction of the filter. Good.

  According to the sublimation product removing apparatus of the present invention, the maintenance frequency of the filter can be reduced, and the operating rate of the substrate processing apparatus can be improved.

  Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a plan view showing an outline of the configuration of a coating and developing treatment system 1 equipped with a sublimation processing apparatus according to the present embodiment, FIG. 2 is a front view of the coating and developing treatment system 1, and FIG. 2 is a rear view of the coating and developing treatment system 1. FIG.

  As shown in FIG. 1, the coating and developing treatment system 1 is a cassette that carries, for example, 25 wafers W from the outside to the coating and developing treatment system 1 in a cassette unit, and carries a wafer W into and out of the cassette C. A station 2, a processing station 3 in which a plurality of various processing apparatuses for performing predetermined processing in a single wafer type in a photolithography process are arranged in multiple stages, and an exposure apparatus provided adjacent to the processing station 3 (Not shown) has a configuration in which the interface unit 4 for transferring the wafer W to and from the unit is integrally connected.

  The cassette station 2 is provided with a cassette mounting table 5 that can mount a plurality of cassettes C in a row in the X direction (vertical direction in FIG. 1). The cassette station 2 is provided with a wafer transfer body 7 that can move in the X direction on the transfer path 6. The wafer carrier 7 is also movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and is selective to the wafers W in each cassette C arranged in the X direction. Can be accessed.

  The wafer transfer body 7 is rotatable in the θ direction around the Z axis, and a temperature control device 60 belonging to a third processing device group G3 on the processing station 3 side to be described later, and a transition device 61 for delivering the wafer W. Can also be accessed.

  The processing station 3 adjacent to the cassette station 2 includes, for example, five processing device groups G1 to G5 in which a plurality of processing devices are arranged in multiple stages. A first processing device group G1 and a second processing device group G2 are arranged in this order from the cassette station 2 side on the X direction negative direction (downward direction in FIG. 1) side of the processing station 3. A third processing device group G3, a fourth processing device group G4, and a fifth processing device group G5 are sequentially arranged from the cassette station 2 side on the X direction positive direction (upward direction in FIG. 1) side of the processing station 3. Has been placed. A first transfer device A1 is provided between the third processing device group G3 and the fourth processing device group G4, and the wafer W is supported and transferred inside the first transfer device A1. A first transfer arm 10 is provided. The first transfer arm 10 can selectively access each processing apparatus in the first processing apparatus group G1, the third processing apparatus group G3, and the fourth processing apparatus group G4 to transfer the wafer W. A second transfer device A2 is provided between the fourth processing device group G4 and the fifth processing device group G5, and the wafer W is supported and transferred inside the second transfer device A2. A second transfer arm 11 is provided. The second transfer arm 11 can selectively access each processing apparatus in the second processing apparatus group G2, the fourth processing apparatus group G4, and the fifth processing apparatus group G5 to transfer the wafer W.

  As shown in FIG. 2, in the first processing unit group G1, a liquid processing apparatus that performs processing by supplying a predetermined liquid to the wafer W, for example, resist coating apparatuses 20, 21, and 22 that apply a resist solution to the wafer W. Bottom coating devices 23 and 24 for forming an antireflection film for preventing reflection of light during the exposure process are stacked in five stages in order from the bottom. In the second processing unit group G2, liquid processing units, for example, development processing units 30 to 34 for supplying a developing solution to the wafer W and performing development processing are stacked in five stages in order from the bottom. In addition, chemical chambers 40 and 41 for supplying various processing liquids to the liquid processing apparatuses in the processing apparatus groups G1 and G2 are provided at the bottom of the first processing apparatus group G1 and the second processing apparatus group G2. Each is provided.

  For example, as shown in FIG. 3, the third processing unit group G3 includes a temperature control unit 60, a transition unit 61, high-precision temperature control units 62 to 64 that control the temperature of the wafer W under high-precision temperature control, and the wafer W. High-temperature heat treatment apparatuses 65 to 68 that heat-treat them at a high temperature are sequentially stacked in nine stages from the bottom.

  In the fourth processing unit group G4, for example, a high-accuracy temperature control unit 70, pre-baking units 71 to 74 that heat-treat the resist-coated wafer W, and post-baking units 75 to 74 that heat-process the developed wafer W. 79 are stacked in 10 steps from the bottom. The sublimation removal apparatus 200 concerning this invention is connected to the prebaking apparatuses 71-74, respectively.

  In the fifth processing apparatus group G5, a plurality of heat treatment apparatuses for heat-treating the wafer W, for example, high-accuracy temperature control apparatuses 80 to 83 and post-exposure baking apparatuses 84 to 89 are stacked in 10 stages in order from the bottom.

  As shown in FIG. 1, a plurality of processing devices are arranged on the positive side in the X direction of the first transfer device A1, and for example, an adhesion device 90 for hydrophobizing the wafer W as shown in FIG. 91, and heating devices 92 and 93 for heating the wafer W are stacked in four stages in order from the bottom. As shown in FIG. 1, a peripheral exposure device 94 that selectively exposes only the edge portion of the wafer W, for example, is disposed on the positive side in the X direction of the second transfer device A2.

  For example, as shown in FIG. 1, the interface unit 4 is provided with a wafer transfer body 101 that moves on a transfer path 100 that extends in the X direction, and a buffer cassette 102. The wafer transfer body 101 can move in the Z direction and can also rotate in the θ direction. With respect to the exposure apparatus (not shown) adjacent to the interface unit 4, the buffer cassette 102, and the fifth processing apparatus group G5. The wafer W can be transferred by accessing.

  Next, the structure of the above-mentioned pre-baking apparatus 71 and the sublimate removal apparatus 200 is demonstrated.

  As illustrated in FIGS. 4 and 5, the pre-baking apparatus 71 includes a heating unit 121 that heat-processes the wafer W and a cooling unit 122 that cools the wafer W in the housing 120.

  As shown in FIG. 4, the heating unit 121 is located on the upper side and can be moved up and down, and the heating plate 121 is located on the lower side and is integrated with the lid 130 to form the processing chamber S. have.

  The lid 130 has a substantially conical shape that gradually increases toward the center, and an exhaust part 130a is provided at the top. The atmosphere in the processing chamber S is discharged from the exhaust part 130a as exhaust gas.

  The hot plate accommodating portion 131 includes a cylindrical case 140. Inside the case 140, a hot plate 141 for heating the wafer W, an annular holding member 142 for holding the outer peripheral portion of the hot plate 141, and A substantially cylindrical support ring 143 that surrounds and holds the outer periphery of the holding member 142 is provided. On the upper surface of the support ring 143, for example, a blow-out port 144 through which an inert gas is blown out into the processing chamber S is formed.

  As shown in FIG. 4, below the hot plate 141, there are provided first raising / lowering pins 150 for supporting the lower surface of the wafer W and raising / lowering it when the wafer W is transferred onto the hot plate 141. The first elevating pin 150 can be moved up and down by an elevating drive mechanism 151. In addition, through holes 152 that penetrate the hot plate 141 in the thickness direction (vertical direction) are formed at three locations surrounding the central portion of the upper surface of the hot plate 141. Each first elevating pin 150 is raised from below the heat plate 141 by driving of the elevating drive mechanism 151 and inserted into the through hole 152, and can move up and down within the through hole 152. It can pass through and protrude above the hot plate 141 or exit below the hot plate 141.

  In the cooling unit 122 adjacent to the heating unit 121, for example, a cooling plate 170 for mounting and cooling the wafer W is provided. For example, cooling water flows through the inside of the cooling plate 170, and the cooling plate 170 can be adjusted to a predetermined set temperature. The cooling plate 170 is attached to a rail 171 extending toward the heating unit 121 side. The cooling plate 170 can move on the rail 171 by the driving unit 172. The cooling plate 170 can move to above the heating plate 141 on the heating unit 121 side.

  For example, as shown in FIG. 5, the cooling plate 170 has a substantially rectangular flat plate shape, and the end surface on the heating unit 121 side is curved in an arc shape. In the cooling plate 170, two slits 173 along the X direction are formed. Below the slit 173, the 2nd raising / lowering pin 174 is provided as shown in FIG. The second elevating pin 174 can be moved up and down by the elevating drive unit 175. The second elevating pin 174 can rise from below the cooling plate 170 and pass through the slit 173 to protrude above the cooling plate 170.

  As shown in FIG. 5, a loading / unloading port 180 for loading / unloading the wafer W is formed on both side surfaces of the casing 120 with the cooling plate 170 interposed therebetween.

  Next, the configuration of the sublimation product removing apparatus 200 connected to the prebaking apparatus 71 will be described.

  As shown in FIGS. 6 and 7, the sublimate removal device 200 includes a sealed container 210. In the vicinity of the center of the side surface of the container 210, the inner diameter gradually decreases, and a side taper portion 210a is formed. That is, the diameter of the lower side surface 210 c is smaller than the upper side surface 210 b of the container 210. The inside of the container 210 is kept at a lower temperature than the processing chamber S, for example, at room temperature. The container 210 is made of a material that does not allow liquid to leak, for example, resin.

  As shown in FIG. 6, an exhaust gas inflow part 211 for allowing exhaust gas to flow into the container 210 is formed in the top plate part 210 d of the container 210, and an exhaust gas inflow pipe 212 is connected to the exhaust gas inflow part 211. One end of the exhaust gas inflow pipe 212 is connected to the center of the top plate portion 210d of the container 210 as shown in FIG. The other end of the exhaust gas inflow pipe 212 is connected to the exhaust part 130a of the pre-baking device 71 as shown in FIG. In order to prevent the sublimate from adhering to the exhaust gas inflow pipe 212, it is preferable to shorten the length of the exhaust gas inflow pipe 212 and install the sublimation removal apparatus 200 near the prebaking 71.

  As shown in FIG. 6, a cleaning liquid supply part 213 for supplying a cleaning liquid into the container 210 is formed in the top plate part 210 d of the container 210, and the cleaning liquid supply pipe 214 penetrates the cleaning liquid supply part 213. As shown in FIG. 7, one end of the cleaning liquid supply pipe 214 passes through a position shifted from the center of the top plate portion 210 d of the container 210. For example, as shown in FIG. 6, the other end of the cleaning liquid supply pipe 214 is connected to the pre-baking apparatus 71, and cooling water that is passed through the cooling plate 170 of the pre-baking apparatus 71 is used as the cleaning liquid. Note that water or a resist solvent, such as thinner, may be used as the cleaning liquid.

  As shown in FIG. 6, a cleaning liquid discharge part 215 that discharges the cleaning liquid in the container 210 is formed on the lower side surface 210 c of the container 210, and a cleaning liquid discharge pipe 216 is connected to the cleaning liquid discharge part 215. The cleaning liquid in the container 210 is stored up to the upper end of the cleaning liquid discharge pipe 216, for example.

  As shown in FIG. 6, an exhaust gas outflow portion 217 that exhausts the atmosphere in the container 210 is formed in the lower portion 210 c of the side surface of the container 210 above the cleaning liquid discharge tube 216, and an exhaust gas outflow tube 218 is formed in the exhaust gas outflow portion 217. It is connected. The exhaust gas outflow pipe 218 is connected to an exhaust means (not shown) for exhausting exhaust gas quantitatively, for example. The exhaust gas outlet pipe 218 is provided with, for example, a pump (not shown), and exhaust gas in the container 210 is sucked into the exhaust gas outlet pipe 218. The exhaust gas outflow pipe 218 is provided with a mist trap 219 for removing moisture in the exhaust gas. In the mist trap 219, elements 219a for collecting moisture are alternately provided in multiple stages. The exhaust gas outlet pipe 218 on the downstream side of the mist trap 219 extends upward.

  A spherical filter 220 is provided inside the container 210 as shown in FIG. The filter 220 is in contact with the side taper portion 210 a of the container 210 over the entire circumference above the exhaust gas outflow pipe 218. The filter 220 floats on the cleaning liquid stored below the exhaust gas outlet pipe 218, and the lower part of the filter 220 is immersed in the cleaning liquid. The filter 220 has a hollow main body 221 and an attachment portion 222 provided so as to cover the main body 221 in order to maintain strength. The main body 221 is made of a material that transmits gas but does not transmit solids and liquids and does not cause pressure loss. For example, polyethylene, polyacetal, or the like is used. The adhering portion 222 is a material that allows gas to permeate but does not allow solids to permeate. The sublimate adhering to the adhering portion 222 is easy to peel off, and the surface is hydrophobic, for example, Teflon (DuPont), which is a fluorine resin. Registered trademark).

  A stopper 223 protruding in the horizontal direction from the entire circumference of the side taper portion 210a is provided above the side taper portion 210a of the container 210 with which the filter 220 is in contact. The stopper 223 prevents the filter 220 from floating upward.

  The coating and developing treatment system 1 equipped with the sublimation product removing apparatus 200 according to the present embodiment is configured as described above. Next, wafer processing performed in the coating and developing treatment system 1 will be described.

  First, one wafer W is taken out from the cassette C on the cassette mounting table 5 by the wafer transfer body 7 and transferred to the temperature adjustment device 60 of the third processing unit group G3. The wafer W transferred to the temperature adjusting device 60 is adjusted to a predetermined temperature, and then transferred to the bottom coating device 23 by the first transfer device 10 to form an antireflection film. The wafer W on which the antireflection film is formed is sequentially transferred to the heating device 92, the high-temperature heat treatment device 65, and the high-precision temperature control device 70 by the first transfer device 10, and subjected to predetermined processing in each device. Thereafter, the wafer W is transferred to the resist coating apparatus 20.

  When a resist film is formed on the surface of the wafer W in the resist coating apparatus 20, the wafer W is transferred to the pre-baking apparatus 71 by the first transfer arm 10 and subjected to heat treatment, and then the second transfer. The arm 11 sequentially conveys the image to the peripheral exposure device 94 and the high-precision temperature control device 83, and performs predetermined processing in each device. Thereafter, the wafer is transferred to an exposure apparatus (not shown) by the wafer transfer body 101 of the interface unit 4, and a predetermined pattern is exposed on the resist film on the wafer W. The wafer W that has been subjected to the exposure process is transferred to the post-exposure baking apparatus 84 by the wafer transfer body 101 and subjected to a predetermined process.

  When the heat treatment in the post-exposure baking apparatus 84 is completed, the wafer W is transferred to the high-accuracy temperature adjustment apparatus 81 by the second transfer arm 11 and the temperature is adjusted, and then transferred to the development processing apparatus 30 and developed on the wafer W. Is applied to form a pattern on the resist film. Thereafter, the wafer W is transferred to the post-baking device 75 by the second transfer arm 11 and subjected to heat treatment, and then transferred to the high-accuracy temperature adjusting device 63 to adjust the temperature. Then, the wafer W is transferred to the transition device 61 by the first transfer arm 10 and returned to the cassette C by the wafer transfer body 7 to complete a series of photolithography steps.

  Next, during the heat treatment of the wafer W by the pre-baking device 71, exhaust gas generated in the pre-baking device 71 is discharged to the sublimation removal device 200, and the sublimation product in the exhaust gas is removed by the sublimation removal device 200. The process will be described.

  In the pre-baking apparatus 71, first, the wafer W held in a substantially horizontal posture by the first transfer arm 10 is loaded into the cooling unit 122 through the loading / unloading port 180 and placed on the cooling plate 170. Then, the wafer W supported by the cooling plate 170 is transported above the hot plate accommodating portion 131 by the movement of the cooling plate 170 in a state where the lid 130 is raised and the processing chamber S is opened. When the wafer W is transported above the hot plate 141, it is transferred to the upper ends of the three first elevating pins 150 that have been lifted and waited in advance. When the cooling plate 170 is withdrawn after the wafer W is delivered, the lid body 130 is lowered to be integrated with the hot plate accommodating portion 131, and the processing chamber S is closed. Then, the first raising / lowering pins 150 are lowered, and the wafer W is transferred to the support member 146 on the hot plate 141. The first raising / lowering pins 150 that have transferred the wafer W are accommodated in the through holes 152 of the hot plate 141. Thus, the wafer W is placed on the upper end portion of the support member 146 and supported while being lifted from the upper surface of the hot plate 141. The temperature of the hot plate 141 is raised in advance, and when the wafer W is brought close to the hot plate 141, heating of the wafer W is started, and heat treatment is performed for a predetermined time, for example, about 60 seconds to 90 seconds.

  While heat treatment is performed on the wafer W, an inert gas is supplied from the outlet 144 into the processing chamber S, and an atmosphere in the processing chamber S is discharged from the exhaust unit 130a as exhaust gas. The exhaust gas discharged from the exhaust part 130a flows into the container 210 of the sublimate removal apparatus 200 through the exhaust gas inflow pipe 212.

  The exhaust gas flowing into the container 210 passes through the filter 220 and is sucked into the exhaust gas outflow tube 218 by a pump (not shown) provided in the exhaust gas outflow tube 218. At this time, since the inside of the container 210 is kept at room temperature, the sublimate in the exhaust gas is solidified. Then, when the exhaust gas passes through the filter 220, the sublimate adheres to the surface of the attachment portion 222 of the filter 220 and is removed from the exhaust gas. The exhaust gas sucked into the exhaust gas outflow pipe 218 passes through the mist trap 219, moisture in the exhaust gas is removed, and is discharged to an exhaust means (not shown).

  As described above, while the exhaust gas flows into the container 210, the cleaning liquid is supplied into the container 210 from the cleaning liquid supply pipe 214. The cleaning liquid is supplied to the surface of the filter 220, and the filter 220 is rotated by the collision of the cleaning liquid. Due to the rotation of the filter 220, the sublimate adhering to the surface of the adhering portion 222 of the filter 220 moves downward. During the movement of the filter 220, the filter 220 is in contact with the side taper portion 210a of the container 210. Therefore, a part of the sublimate adhering to the adhesion portion 222 is scraped off by the side taper portion 210a, and the filter 220 rotates. Fall down. Then, the filter 220 to which the remaining sublimate has adhered is immersed in the cleaning liquid stored in the container 210, and the sublimated substance is removed from the surface of the adhesion portion 222 of the filter 220 into the cleaning liquid. The cleaning liquid containing the removed sublimate is discharged from the cleaning liquid discharge pipe 216 and discarded. The cleaned filter 220 rotates upward, and the sublimate in the exhaust gas is again adhered to the adhesion part 222 and removed.

  When the heat treatment of the wafer W in the pre-baking apparatus 71 is completed, the supply of air from the outlet 144 in the processing chamber S and the exhaust from the exhaust unit 130a are stopped. Then, along with the stop of the exhaust from the exhaust part 130a, the sublimation product removing apparatus 200 stops the supply of the cleaning liquid from the cleaning liquid supply pipe 214, and ends the removal of the sublimate in the exhaust gas. On the other hand, in the pre-baking apparatus 71, when the heat treatment of the wafer W is completed, the first lifting pins 150 are lifted, and the wafer W is lifted from the hot plate 141 by the first lifting pins 150. Thereafter, after the lid body 130 is raised and the processing chamber S is opened, the cooling plate 170 is moved to receive the wafer W from the first lift pins 150 and exit. As a result, the wafer W is unloaded from the heating unit 121 to the cooling unit 122. When the wafer W on the cooling plate 170 is cooled in the cooling unit 122, the wafer W is unloaded from the cooling unit 122 through the loading / unloading port 180. Thus, a series of heat treatment and sublimation removal in the exhaust gas is completed.

  According to the above embodiment, since the filter 220 allows gas to pass but does not allow solids to pass, the sublimate in the exhaust gas flowing in from the exhaust gas inflow pipe 212 can be removed by the attachment portion 222 of the filter 220. Further, while the exhaust gas flows in the container 210, the filter 220 to which the sublimate adheres is immersed in the cleaning liquid stored in the container 210 due to the rotation of the filter 220. It can be removed in the cleaning liquid. Then, the cleaned filter 220 rotates upward, and the sublimate in the exhaust gas can be adhered again and removed. In addition, since the cleaning liquid from which the sublimate has been removed is discharged from the cleaning liquid discharge pipe 216, the sublimated substance in the cleaning liquid does not adhere to the filter 220 again. In this way, since the sublimate in the exhaust gas is collected by the filter 220, the collected sublimate can be washed away by the cleaning liquid, so that the sublimate does not accumulate on the surface of the filter 220. Therefore, the filter 220 is not clogged, and the maintenance frequency of the filter 220 can be reduced. Accordingly, the operating rate of the prebaking apparatus 71 can be improved.

  Further, since the filter 220 has a spherical shape, the filter 220 can rotate in multiple directions, the sublimated material can be removed over the entire spherical surface, and the entire spherical surface can be cleaned with the cleaning liquid. Therefore, the maintenance frequency of the filter 220 can be reduced. Further, since the cleaning liquid supply pipe 214 passes through a position shifted from the center of the top plate portion 210 d of the container 210, the cleaning liquid supplied from the cleaning liquid supply pipe 214 shifts from the vertical central axis of the filter 220 and is filtered. The filter 220 can be reliably rotated in multiple directions.

  In addition, since the filter 220 is in contact with the side taper portion 210a of the container 210 over the entire circumference, the sublimate attached to the surface of the attachment portion 222 of the filter 220 can be scraped off to remove the sublimate.

  Further, a stopper 223 protruding from the entire circumference of the side taper portion 210a of the container 210 is provided above the side taper portion 210a of the container 210 with which the filter 220 is in contact, so that the filter 220 is lifted above the cleaning liquid. Can be prevented. Further, the sublimate adhered to the surface of the filter 220 can be scraped off by the stopper 223 to remove the sublimate. Furthermore, the stopper 223 can also prevent the sublimate from rising through the gap between the filter 220 and the side tapered portion 210a of the container 210.

  Further, since the exhaust gas outflow pipe 218 on the downstream side of the mist trap 219 is directed upward, even if the cleaning liquid in the container 210 enters the exhaust gas outflow pipe 218, the cleaning liquid remains in the exhaust gas outflow pipe 218. There is no flow downstream.

  In the above embodiment, the sublimation removal device 200 is connected to the pre-baking devices 71 to 74, respectively, but one sublimation removal device 200 may be connected to the pre-baking devices 71 to 74 in common. . In addition, the sublimation removal device 200 is connected to post baking devices 75 to 79 and post exposure baking devices 84 to 89 which are other heat treatment devices, and the sublimates in the exhaust gas from these heat treatment devices can be removed. it can.

  The sublimation product removing apparatus 200 of the above embodiment may be connected to the resist coating apparatuses 20 to 22. In the resist coating apparatuses 20 to 22, sublimates are generated from the resist solution during the coating process of the resist solution on the wafer W. Then, the atmosphere in the resist coating apparatuses 20 to 22 is discharged together with the sublimation to the sublimation removal apparatus 200, and the sublimation removal apparatus 200 can remove the sublimation. In this case, a solvent is used as the cleaning liquid of the sublimate removal apparatus 200. Further, the sublimation removal device 200 may be connected to an SOG (Spin On Glass) coating device (not shown). In this case, the sublimation generated from the coating solution of the SOG material can be removed from the exhaust gas. it can.

  In the sublimation product removing apparatus 200 of the above embodiment, the cleaning liquid containing the sublimated material is discharged from the cleaning liquid discharge pipe 216 and discarded. However, the cleaning liquid may be purified and reused. In such a case, the cleaning liquid discharge pipe 216 is connected to the cleaning liquid supply pipe 214 as shown in FIG. Between the cleaning liquid discharge pipe 216 and the cleaning liquid supply pipe 214, there are provided a filter 231 that removes sublimated substances in the cleaning liquid and a pump 232 that sends the cleaning liquid from which the sublimated substances have been removed to the cleaning liquid supply pipe 214. Accordingly, the cleaning liquid can be reused, and the amount of the cleaning liquid supplied to the sublimation product removing apparatus 200 can be reduced.

  In the sublimation removal apparatus 200 of the above embodiment, the spherical filter 220 is installed. However, instead of the filter 220, a cylindrical filter 240 may be used as shown in FIGS. Good. The filter 240 is installed horizontally and is rotatable in the circumferential direction of the filter 240. Similarly to the filter 220, the filter 240 has a hollow main body 241 and an attachment portion 242 provided so as to cover the main body 241, and allows exhaust gas to pass therethrough to attach sublimate to the attachment portion 242. In such a case, a substantially rectangular parallelepiped container 243 is used instead of the substantially cylindrical container 210. The filter 220 is in contact with the longitudinal side taper portion 243 a of the container 243 above the exhaust gas outflow pipe 218, and the lower part of the filter 220 is immersed in the cleaning liquid stored below the exhaust gas outflow pipe 218. Also in this example, the sublimate removed by the filter 240 can be removed in the cleaning liquid, so that the filter 240 is not clogged and the maintenance frequency of the filter 240 can be reduced.

The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It will be apparent to those skilled in the art that various changes or modifications can be made within the scope of the ideas described in the claims, and these are naturally within the technical scope of the present invention. It is understood that it belongs.
The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

  The present invention is useful for, for example, a sublimate removal apparatus that removes sublimate in exhaust gas discharged from a substrate processing apparatus.

It is a top view which shows the outline of a structure of the coating and developing processing system carrying the sublimate removal apparatus concerning this Embodiment. FIG. 2 is a front view of the coating and developing treatment system of FIG. 1. FIG. 2 is a rear view of the coating and developing treatment system of FIG. 1. It is a longitudinal cross-sectional view of a prebaking apparatus. It is a top view of a prebaking apparatus. It is a longitudinal cross-sectional view of the sublimate removal apparatus concerning this Embodiment. It is a top view of the sublimate removal apparatus concerning this Embodiment. It is explanatory drawing which shows the outline of a structure of the system provided with the circulation function of the washing | cleaning liquid in the sublimate removal apparatus concerning this Embodiment. It is a top view of the sublimate removal apparatus concerning another form. It is a longitudinal cross-sectional view of the sublimate removal apparatus concerning another form.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Coating and developing treatment system 71 Prebaking apparatus 200 Sublimation removal apparatus 210 Container 211 Exhaust gas inflow part 212 Exhaust gas inflow pipe 213 Cleaning liquid supply part 214 Cleaning liquid supply pipe 215 Cleaning liquid discharge part 216 Cleaning liquid discharge pipe 217 Exhaust gas outflow part 218 Exhaust gas outflow pipe 219 Mist Trap 220 Filter 223 Stopper

Claims (8)

A sublimate removal apparatus for removing sublimate in exhaust gas discharged from a substrate processing apparatus,
A sealed container for storing the cleaning liquid;
A spherical filter disposed in the container;
An exhaust gas inflow part for allowing exhaust gas to flow from the upper part of the container toward the filter;
A cleaning liquid supply unit for supplying a cleaning liquid from the upper part of the container toward the filter;
Exhaust gas flowing out from the exhaust gas inflow portion in the container is provided below the location where the exhaust gas collides with the filter, and an exhaust gas outflow portion that causes the exhaust gas in the container to flow out,
A cleaning liquid discharge part provided below the exhaust gas outflow part in the container,
The filter material is made of a material that allows gas to pass but does not allow solids and liquids to pass through.
The sublimate removing device, wherein the filter is rotatable in a container, and a lower part of the filter is immersed in a cleaning liquid stored in the container. Above the exhaust gas outlet in the container,
The sublimate removing device according to claim 1, wherein the filter is in annular contact with the inner peripheral portion of the side surface of the container. Above the exhaust gas outlet in the container,
The sublimate removing device according to claim 1, wherein a stopper for preventing the filter from being lifted is provided. 4. The sublimate removal device according to claim 3, wherein the stopper has a shape protruding in an annular shape from an inner peripheral portion of a side surface of the container toward an inner side. 5. The sublimate removal device according to any one of claims 1 to 4, wherein the cleaning liquid supplied from the cleaning liquid supply unit is displaced from a vertical central axis of the filter and collides with a surface of the filter. The sublimate removal apparatus according to any one of claims 1 to 5, wherein a mist trap that captures moisture in the exhausted exhaust gas is provided in an outflow path that continues from the exhaust gas outflow portion. The sublimate removal device according to any one of claims 1 to 6, wherein an exhaust path following the exhaust gas outflow portion is provided upward from the exhaust gas outflow portion. The sublimate removing device according to claim 1, wherein the cleaning liquid discharged from the cleaning liquid discharge unit is circulated to the cleaning liquid supply unit.

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