TW202415455A - Substrate processing apparatus and substrate processing method making sure that the processing liquid can be maintained at a desired temperature, and the desired etching rate can be achieved - Google Patents
Substrate processing apparatus and substrate processing method making sure that the processing liquid can be maintained at a desired temperature, and the desired etching rate can be achieved Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 163
- 239000007788 liquid Substances 0.000 title claims abstract description 119
- 238000003672 processing method Methods 0.000 title claims abstract description 10
- 238000005530 etching Methods 0.000 title abstract description 19
- 239000011261 inert gas Substances 0.000 claims abstract description 87
- 238000010438 heat treatment Methods 0.000 claims abstract description 64
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- 238000000034 method Methods 0.000 abstract description 8
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 62
- 230000007246 mechanism Effects 0.000 description 35
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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Abstract
Description
本發明涉及一種基板處理裝置及基板處理方法。The present invention relates to a substrate processing device and a substrate processing method.
作為通過處理液對層疊於半導體晶圓等基板的膜進行蝕刻的濕式蝕刻的裝置，存在將多片基板一次性浸漬於處理液的批量式基板處理裝置。此種批量式基板處理裝置可一次性對多片基板進行處理，因此生產性高。As a wet etching apparatus for etching a film stacked on a substrate such as a semiconductor wafer with a processing liquid, there is a batch type substrate processing apparatus that immerses a plurality of substrates in the processing liquid at one time. Such a batch type substrate processing apparatus can process a plurality of substrates at one time, and therefore has high productivity.
但是，批量式基板處理裝置是將多片基板浸漬於共同的條件的處理液內，因此難以根據形成於各基板的膜厚等的差異，針對每一基板細微地對蝕刻深度等進行調整。因此，使用單片式基板處理裝置，所述單片式基板處理裝置在使基板旋轉的同時向基板的旋轉中心附近供給蝕刻用的處理液，並使處理液在基板表面延展，由此對基板逐片進行處理。However, the batch type substrate processing apparatus immerses a plurality of substrates in a processing liquid under common conditions, and therefore it is difficult to finely adjust the etching depth, etc. for each substrate according to the difference in the film thickness, etc. formed on each substrate. Therefore, a single-chip substrate processing apparatus is used, which supplies a processing liquid for etching near the rotation center of the substrate while rotating the substrate, and spreads the processing liquid on the substrate surface, thereby processing the substrates one by one.
作為蝕刻用的處理液，使用氫氟酸或磷酸、硫酸等酸系液體。例如，在層疊有氧化膜與氮化膜的基板中，在對氮化膜進行蝕刻的情況下，有利用磷酸的水溶液（磷酸溶液）作為處理液的基板處理裝置。磷酸溶液的溫度越高，蝕刻性能越高，若磷酸溶液的溫度下降，則蝕刻性能下降。因此，為了獲得所期望的蝕刻速率，必需將磷酸溶液維持於高溫。例如，通過將磷酸溶液加熱至150℃～160℃並供給至基板，來對氮化膜進行蝕刻。As a processing liquid for etching, an acidic liquid such as hydrofluoric acid, phosphoric acid, or sulfuric acid is used. For example, in a substrate having an oxide film and a nitride film stacked thereon, when etching the nitride film, there is a substrate processing device that uses an aqueous solution of phosphoric acid (phosphoric acid solution) as a processing liquid. The higher the temperature of the phosphoric acid solution, the higher the etching performance. If the temperature of the phosphoric acid solution decreases, the etching performance decreases. Therefore, in order to obtain the desired etching rate, the phosphoric acid solution must be maintained at a high temperature. For example, the nitride film is etched by heating the phosphoric acid solution to 150°C to 160°C and supplying it to the substrate.
然而，矽晶圓等基板的熱傳導率高。於是，供給至基板的表面的磷酸溶液的熱經由基板而逃逸，溫度容易下降。即，供給至基板的旋轉中心附近的磷酸溶液在旋轉中心附近成為高溫，但隨著朝向基板的外周移動，溫度會因散熱而下降。However, the thermal conductivity of substrates such as silicon wafers is high. Therefore, the heat of the phosphoric acid solution supplied to the surface of the substrate escapes through the substrate, and the temperature tends to drop. That is, the phosphoric acid solution supplied to the vicinity of the rotation center of the substrate becomes high temperature near the rotation center, but as it moves toward the periphery of the substrate, the temperature drops due to heat dissipation.
如此，若磷酸溶液的溫度因基板的表面上的位置而不同，則因基板的表面上的位置而蝕刻速率產生差異，因此難以均勻地對整個基板進行處理。為了應對此問題，有在維持基板的表面上的磷酸溶液的溫度的同時進行蝕刻處理的基板處理裝置（參照專利文獻1）。In this way, if the temperature of the phosphoric acid solution varies depending on the position on the surface of the substrate, the etching rate varies depending on the position on the surface of the substrate, making it difficult to uniformly process the entire substrate. In order to cope with this problem, there is a substrate processing device that performs etching processing while maintaining the temperature of the phosphoric acid solution on the surface of the substrate (see Patent Document 1).
所述基板處理裝置在基板表面的上方設置有覆蓋基板的表面的程度的大小的加熱板，使加熱板接近基板的表面，從設置於加熱板的中心附近的噴出口供給高溫的磷酸溶液。基板與加熱板之間的距離為幾毫米左右，磷酸溶液在被加熱的同時在基板表面上流動。由此，可維持磷酸溶液的蝕刻性能。The substrate processing device is provided with a heating plate of a size covering the surface of the substrate above the surface of the substrate, and the heating plate is brought close to the surface of the substrate, and a high-temperature phosphoric acid solution is supplied from a nozzle provided near the center of the heating plate. The distance between the substrate and the heating plate is about several millimeters, and the phosphoric acid solution flows on the surface of the substrate while being heated. Thus, the etching performance of the phosphoric acid solution can be maintained.
[現有技術文獻] [專利文獻] [專利文獻1] 日本專利第5841431號公報 [Prior art literature] [Patent literature] [Patent literature 1] Japanese Patent No. 5841431
[發明所要解決的問題] 在使用如以上所述的加熱板的基板處理裝置中，為了獲得所期望的蝕刻速率，需要將處理中的處理液的溫度維持於所期望的溫度。因此，以往通過對加熱板的溫度進行測定，根據測定溫度來對加熱板的溫度進行控制，來維持處理液的溫度。然而，即使對加熱板的溫度進行測定，也並非對處理液的溫度進行測定，因此無法準確地知道處理液是否可維持所期望的溫度。 [Problem to be solved by the invention] In order to obtain the desired etching rate in a substrate processing device using a heating plate as described above, the temperature of the processing liquid during processing needs to be maintained at the desired temperature. Therefore, in the past, the temperature of the heating plate was measured and the temperature of the heating plate was controlled according to the measured temperature to maintain the temperature of the processing liquid. However, even if the temperature of the heating plate is measured, the temperature of the processing liquid is not measured, so it is impossible to accurately know whether the processing liquid can maintain the desired temperature.
作為用於對處理液的溫度進行測定的溫度計，例如有使用紅外線以非接觸方式對溫度進行測定的放射溫度計。但是，處理中的基板被加熱板覆蓋，因此難以遠程對處理液的溫度進行測定。為了應對此問題，可考慮在加熱板的與基板相向的面設置溫度計。但是，所述溫度計與處理液接近，因此由於溫度計受到高溫處理液的蒸汽，而溫度計會破損。於是，所測定的溫度變得不準確或無法進行溫度測定，因此難以將處理液設為所期望的溫度。As a thermometer for measuring the temperature of the processing liquid, for example, there is a radiation thermometer that measures the temperature in a non-contact manner using infrared rays. However, the substrate being processed is covered by the heating plate, so it is difficult to measure the temperature of the processing liquid remotely. In order to deal with this problem, it can be considered to set a thermometer on the surface of the heating plate facing the substrate. However, the thermometer is close to the processing liquid, so the thermometer is damaged by the vapor of the high-temperature processing liquid. Therefore, the measured temperature becomes inaccurate or the temperature cannot be measured, so it is difficult to set the processing liquid to the desired temperature.
本發明的實施方式是為了解決如上所述的課題而提出，其目的在於提供一種基板處理裝置及基板處理方法，通過對處理液的溫度進行測定並根據測定溫度來對加熱部的溫度進行控制，可將處理液維持於所期望的溫度，以所期望的蝕刻速率對基板進行處理。The implementation method of the present invention is proposed to solve the problem mentioned above, and its purpose is to provide a substrate processing device and a substrate processing method. By measuring the temperature of the processing liquid and controlling the temperature of the heating part according to the measured temperature, the processing liquid can be maintained at a desired temperature and the substrate can be processed at a desired etching rate.
[解決問題的技術手段] 本發明的實施方式的基板處理裝置具有：旋轉體，使由保持部保持的基板旋轉；供給部，向所述基板的被處理面供給經加熱的處理液；板，設置於與所述被處理面相向的位置且能夠沿與所述基板相接/分離的方向移動；驅動部，使所述板相對於所述基板進退；加熱部，設置於所述板，對供給至所述基板的所述被處理面的所述處理液進行加熱；溫度計，收容於形成在所述板且在所述被處理面之側開口的設置孔，以非接觸方式對供給至所述基板的所述被處理面的所述處理液的溫度進行測定；供氣口，在所述設置孔的內側壁的比所述溫度計更靠下側處開口，向所述溫度計的下方供給惰性氣體；排氣口，在所述設置孔的所述內側壁的與所述供氣口不同的位置且比所述溫度計更靠下側處開口，將從所述供氣口供給的所述惰性氣體排出；以及控制部，根據由所述溫度計測定出的溫度來對所述加熱部進行控制。 [Technical means for solving the problem] The substrate processing device of the embodiment of the present invention comprises: a rotating body, which rotates the substrate held by the holding part; a supply part, which supplies the heated processing liquid to the processing surface of the substrate; a plate, which is arranged at a position facing the processing surface and can move in the direction of contacting/separating from the substrate; a driving part, which makes the plate move forward and backward relative to the substrate; a heating part, which is arranged on the plate, and heats the processing liquid supplied to the processing surface of the substrate; a thermometer, which is housed in a device formed on the plate and opened on the side of the processing surface. A setting hole is provided to measure the temperature of the processing liquid supplied to the processing surface of the substrate in a non-contact manner; an air supply port is opened on the inner wall of the setting hole at a lower side than the thermometer to supply inert gas below the thermometer; an exhaust port is opened on the inner wall of the setting hole at a position different from the air supply port and at a lower side than the thermometer to exhaust the inert gas supplied from the air supply port; and a control unit is used to control the heating unit according to the temperature measured by the thermometer.
本發明的實施方式的基板處理方法中，利用旋轉體使由保持部保持的基板旋轉，形成有設置在與所述基板的被處理面相向的位置且能夠沿與所述基板相接/分離的方向移動的板，從設置於在所述被處理面之側開口的設置孔的供氣口供給惰性氣體，從設置於所述設置孔的排氣口將所述惰性氣體排出，使所述板接近所述基板，且利用供給部向所述基板的所述被處理面供給經加熱的處理液，利用設置於所述板的加熱部對所述處理液進行加熱，利用收容於所述設置孔內且設置於所述供氣口及所述排氣口之上的溫度計，以非接觸方式對所述處理液的溫度進行測定，利用控制部根據由所述溫度計測定出的溫度來對所述加熱部進行控制。In the substrate processing method of the embodiment of the present invention, a substrate held by a holding part is rotated by a rotating body, and a plate is formed which is arranged at a position opposite to the processed surface of the substrate and can move in a direction of contact with/separation from the substrate, an inert gas is supplied from an air supply port of a setting hole opened on the side of the processed surface, and the inert gas is discharged from an exhaust port provided in the setting hole, so that the plate is brought close to the substrate, and a heated processing liquid is supplied to the processed surface of the substrate by the supply part, and the processing liquid is heated by a heating part provided on the plate, and the temperature of the processing liquid is measured in a non-contact manner by a thermometer accommodated in the setting hole and arranged on the air supply port and the exhaust port, and the heating part is controlled by a control part according to the temperature measured by the thermometer.
[發明的效果] 本發明的實施方式可提供一種基板處理裝置及基板處理方法，通過對處理液的溫度進行測定並根據測定溫度來對加熱部的溫度進行控制，可將處理液維持於所期望的溫度，以所期望的蝕刻速率對基板進行處理。 [Effect of the invention] The implementation method of the present invention can provide a substrate processing device and a substrate processing method. By measuring the temperature of the processing liquid and controlling the temperature of the heating part according to the measured temperature, the processing liquid can be maintained at a desired temperature and the substrate can be processed at a desired etching rate.
以下，參照附圖對本發明的實施方式進行說明。 [概要] 如圖1所示，本實施方式的基板處理裝置1通過在使基板W與旋轉體10一起旋轉的同時在供給部40中將經加熱的處理液L供給至基板W的其中一個面（以下，稱為被處理面），而對被處理面進行處理。此時，如圖2所示，驅動部80使具有加熱部60（加熱器61）的板50接近基板W的被處理面，使板50與基板W之間的空間變窄，由此使熱不易逃逸並且進行加熱，來抑制處理液L的溫度下降。板50與基板W非接觸，且能夠相對於基板W進退。 Hereinafter, the embodiment of the present invention will be described with reference to the accompanying drawings. [Overview] As shown in FIG. 1 , the substrate processing device 1 of the present embodiment processes the processed surface by supplying the heated processing liquid L to one of the surfaces of the substrate W (hereinafter referred to as the processed surface) in the supply section 40 while rotating the substrate W together with the rotating body 10. At this time, as shown in FIG. 2 , the driving section 80 brings the plate 50 having the heating section 60 (heater 61) close to the processed surface of the substrate W, narrows the space between the plate 50 and the substrate W, thereby making it difficult for heat to escape and performing heating, thereby suppressing the temperature drop of the processing liquid L. The plate 50 is non-contact with the substrate W and can move forward and backward relative to the substrate W.
此外，由本實施方式處理的基板W例如是形成有氮化膜的矽晶圓，作為處理液L，使用用於對氮化膜進行蝕刻的磷酸溶液。In addition, the substrate W processed by the present embodiment is, for example, a silicon wafer having a nitride film formed thereon, and as the processing liquid L, a phosphoric acid solution for etching the nitride film is used.
[結構] 如圖1及圖2所示，基板處理裝置1具有：旋轉體10、旋轉機構20、保持部30、供給部40、板50、加熱部60、溫度計70、驅動部80、控制部90。 [Structure] As shown in FIG. 1 and FIG. 2 , the substrate processing device 1 includes: a rotating body 10, a rotating mechanism 20, a holding part 30, a supply part 40, a plate 50, a heating part 60, a thermometer 70, a driving part 80, and a control part 90.
（旋轉體） 旋轉體10使由保持部30保持的基板W旋轉。旋轉體10具有與由保持部30保持的基板W空開間隔地相向的工作台11。旋轉體10為一端被工作台11堵塞的圓筒形狀。工作台11為直徑比基板W大的圓形的面。 (Rotating body) The rotating body 10 rotates the substrate W held by the holding part 30. The rotating body 10 has a worktable 11 facing the substrate W held by the holding part 30 with a space therebetween. The rotating body 10 is in a cylindrical shape with one end blocked by the worktable 11. The worktable 11 is a circular surface with a diameter larger than that of the substrate W.
旋轉體10由對處理液L具有耐性的材料形成。例如，優選為由聚四氟乙烯（Polytetrafluoroethylene，PTFE）、聚氯三氟乙烯（Polychlorotrifluoroethylene，PCTFE）等氟系樹脂構成旋轉體10。此外，雖未圖示，但此種旋轉體10通過後述的旋轉機構20能夠旋轉地設置於固定在設置面或設置於設置面的台架的固定基座上。The rotating body 10 is formed of a material resistant to the processing liquid L. For example, the rotating body 10 is preferably formed of a fluorine-based resin such as polytetrafluoroethylene (PTFE) or polychlorotrifluoroethylene (PCTFE). Although not shown, the rotating body 10 is rotatably arranged on a fixed base fixed to the installation surface or a stand arranged on the installation surface by a rotating mechanism 20 described later.
此外，在旋轉體10的周圍設置有隔板12、杯13。隔板12、杯13是以上部的直徑縮窄的方式彎曲的筒狀體，以隔板12成為內側、杯13成為外側的方式呈同心圓狀配置。在隔板12及杯13的底面分別設置有用於對處理液L進行排液的排液口12a、排液口13a。隔板12、杯13從基板W的周圍接收從旋轉的基板W飛散的各種處理液L。隔板12所接收的處理液L經由排液口12a而排出至未圖示的回收路徑，杯13所接收的處理液L經由排液口13a而排出至未圖示的排液路徑。In addition, a partition 12 and a cup 13 are provided around the rotating body 10. The partition 12 and the cup 13 are cylindrical bodies bent in a manner in which the diameter of the upper part is narrowed, and are arranged in a concentric circle in a manner in which the partition 12 is on the inner side and the cup 13 is on the outer side. A drain port 12a and a drain port 13a for draining the processing liquid L are provided on the bottom surfaces of the partition 12 and the cup 13, respectively. The partition 12 and the cup 13 receive various processing liquids L scattered from the rotating substrate W from around the substrate W. The processing liquid L received by the partition 12 is discharged to a recovery path not shown in the figure through the drain port 12a, and the processing liquid L received by the cup 13 is discharged to a drainage path not shown in the figure through the drain port 13a.
（旋轉機構） 旋轉機構20是使旋轉體10旋轉的機構。旋轉機構20具有驅動源21。驅動源21固定於固定基座，為具有中空的轉子及使所述轉子旋轉的定子的中空馬達。驅動源21通過對定子的線圈通電，使旋轉體10與轉子一起旋轉。 (Rotation mechanism) The rotation mechanism 20 is a mechanism for rotating the rotating body 10. The rotation mechanism 20 has a drive source 21. The drive source 21 is fixed to a fixed base and is a hollow motor having a hollow rotor and a stator for rotating the rotor. The drive source 21 rotates the rotating body 10 together with the rotor by energizing the coil of the stator.
（保持部） 保持部30與工作台11平行且空開間隔地對基板W進行保持。保持部30具有保持銷31。保持銷31通過未圖示的驅動機構以與旋轉體10的軸平行的軸為中心偏心旋轉，由此在與基板W的邊緣部相接並對基板W進行保持的保持位置與通過從基板W的邊緣部離開而將基板W釋放的釋放位置之間移動。 (Holding section) The holding section 30 holds the substrate W in parallel with the worktable 11 and at a distance therefrom. The holding section 30 has a holding pin 31. The holding pin 31 is eccentrically rotated about an axis parallel to the axis of the rotating body 10 by a driving mechanism (not shown) to move between a holding position where the substrate W is held in contact with the edge of the substrate W and a release position where the substrate W is released by separating from the edge of the substrate W.
（供給部） 如圖1所示，供給部40向基板W的被處理面、即由保持部30保持的基板W的與工作台11為相反側的面供給處理液L。供給部40具有供給兩種處理液L的處理液供給機構411、處理液供給機構412。 (Supply Unit) As shown in FIG. 1 , the supply unit 40 supplies the processing liquid L to the processing surface of the substrate W, that is, the surface of the substrate W held by the holding unit 30 on the opposite side to the worktable 11. The supply unit 40 has a processing liquid supply mechanism 411 and a processing liquid supply mechanism 412 for supplying two types of processing liquids L.
處理液供給機構411供給包含磷酸（H 3PO 4）的水溶液（以下，稱為磷酸溶液）作為處理液L。處理液供給機構412供給純水（H 2O）作為處理液L。處理液供給機構411、處理液供給機構412具有儲存各個處理液L的處理液槽41a。 The processing liquid supply mechanism 411 supplies an aqueous solution containing phosphoric acid (H 3 PO 4 ) (hereinafter referred to as a phosphoric acid solution) as the processing liquid L. The processing liquid supply mechanism 412 supplies pure water (H 2 O) as the processing liquid L. The processing liquid supply mechanism 411 and the processing liquid supply mechanism 412 have a processing liquid tank 41 a storing the processing liquid L respectively.
各處理液槽41a分別與處理液供給管41b連接。處理液供給管41b的前端部與由保持部30保持的基板W相向。由此，來自各處理液槽41a的處理液L經由處理液供給管41b而供給至基板W的表面。Each processing liquid tank 41a is connected to a processing liquid supply pipe 41b. The front end of the processing liquid supply pipe 41b faces the substrate W held by the holding unit 30. Thus, the processing liquid L from each processing liquid tank 41a is supplied to the surface of the substrate W through the processing liquid supply pipe 41b.
在各處理液供給管41b分別設置有閥41c、流量計41d。閥41c具有流量的調節功能與接通/斷開（ON/OFF）功能。各閥41c對從對應的處理液槽41a流入至處理液供給管41b的處理液L的量進行調整。在各處理液供給管41b中流動的處理液L的量由對應的流量計41d檢測。此外，儲存於各處理液槽41a的處理液L的生成設備及生成方法並不限定於特定的生成設備及生成方法。A valve 41c and a flow meter 41d are provided in each treatment liquid supply pipe 41b. The valve 41c has a flow rate adjustment function and an ON/OFF function. Each valve 41c adjusts the amount of treatment liquid L flowing from the corresponding treatment liquid tank 41a to the treatment liquid supply pipe 41b. The amount of treatment liquid L flowing in each treatment liquid supply pipe 41b is detected by the corresponding flow meter 41d. In addition, the production equipment and production method of the treatment liquid L stored in each treatment liquid tank 41a are not limited to specific production equipment and production method.
（板） 板50為設置於與基板W的被處理面相向的位置且能夠沿與基板W相接/分離的方向移動的構件。板50是直徑比基板W大的圓形。在板50的上部的周緣，形成有向外方擴徑的凸緣50b。板50由石英形成。此外，為了兼顧耐熱性與耐液性，板50可為雙層結構。即，由具有耐熱性的材料形成基體，其周圍由對處理液L具有耐性的材料覆蓋。例如，可將石英作為基體，在其周圍形成PTFE、PCTFE等氟系樹脂的蓋，由此構成板50。 (Plate) Plate 50 is a member that is disposed at a position facing the processed surface of substrate W and is movable in a direction of contact with/separation from substrate W. Plate 50 is circular with a diameter larger than substrate W. A flange 50b that expands outward is formed at the periphery of the upper portion of plate 50. Plate 50 is formed of quartz. In addition, in order to take into account both heat resistance and liquid resistance, plate 50 may be a double-layer structure. That is, a base is formed of a heat-resistant material, and its periphery is covered with a material that is resistant to the processing liquid L. For example, quartz may be used as a base, and a cover of a fluororesin such as PTFE or PCTFE may be formed around it, thereby forming plate 50.
在板50插通有兩個處理液供給管41b的前端，形成有向基板W側露出的兩個噴出口50a。兩個噴出口50a偏離旋轉體10的旋轉的軸。其原因在於，隨著基板W的旋轉，基板W中的與噴出口50a的相向部分逐次變化，由此有助於處理液L的溫度均勻化。進而，如後所述，在板50設置有設置孔51、供氣口52、排氣口55。Two nozzles 50a exposed to the substrate W side are formed at the front end of the plate 50 through which two processing liquid supply pipes 41b are inserted. The two nozzles 50a are offset from the axis of rotation of the rotating body 10. The reason is that as the substrate W rotates, the portion of the substrate W facing the nozzles 50a gradually changes, which helps to make the temperature of the processing liquid L uniform. Furthermore, as described later, the plate 50 is provided with a setting hole 51, an air supply port 52, and an exhaust port 55.
（加熱部） 加熱部60設置於板50，對供給至基板W的被處理面的處理液L進行加熱。本實施方式的加熱部60是通過通電而發熱的加熱器61。加熱器61在平板50的水平方向上的不同位置設置有多個。例如，加熱器61包括能夠各別地對發熱量進行控制的例如三個加熱片。即，在圓形形狀的加熱片的外側同心地配置有圓環狀的兩個加熱片。根據此種加熱器61，通過各別地對同心地配置的三個加熱片的發熱量進行控制，可針對同心狀的每一部分改變處理液L的溫度。此外，為了抑制基板W的外周側的溫度下降，加熱部60的直徑優選為基板W的直徑以上、即同等或更大的直徑。 (Heating section) The heating section 60 is provided on the plate 50 to heat the processing liquid L supplied to the processing surface of the substrate W. The heating section 60 of the present embodiment is a heater 61 that generates heat by energizing. A plurality of heaters 61 are provided at different positions in the horizontal direction of the plate 50. For example, the heater 61 includes, for example, three heating plates that can control the amount of heat generated individually. That is, two annular heating plates are concentrically arranged on the outer side of the circular heating plate. According to this heater 61, by individually controlling the amount of heat generated by the three concentrically arranged heating plates, the temperature of the processing liquid L can be changed for each concentric portion. In addition, in order to suppress the temperature drop on the outer periphery of the substrate W, the diameter of the heating section 60 is preferably greater than the diameter of the substrate W, that is, equal to or greater than the diameter of the substrate W.
（溫度計） 溫度計70以非接觸方式對供給至基板W的被處理面的處理液L的溫度進行測定。溫度計70收容於形成在板50的設置孔51。設置孔51是圓柱形狀的貫通孔。設置孔51沿板50的厚度方向（上下方向）貫通。溫度計70插入至設置孔51的上端。設置孔51的被處理面側的端部成為開口51a。作為溫度計70，例如使用基於測定對象發出的紅外線的放射量來對溫度進行測定的放射溫度計。溫度計70的檢測面朝向被處理面，以便可經由設置孔51的開口51a而感知紅外線。 (Thermometer) The thermometer 70 measures the temperature of the processing liquid L supplied to the processed surface of the substrate W in a non-contact manner. The thermometer 70 is accommodated in the setting hole 51 formed in the plate 50. The setting hole 51 is a cylindrical through hole. The setting hole 51 is through in the thickness direction (up and down direction) of the plate 50. The thermometer 70 is inserted to the upper end of the setting hole 51. The end of the setting hole 51 on the processed surface side becomes an opening 51a. As the thermometer 70, for example, a radiation thermometer that measures the temperature based on the radiation amount of infrared rays emitted by the measured object is used. The detection surface of the thermometer 70 faces the processed surface so that infrared rays can be sensed through the opening 51a of the setting hole 51.
溫度計70在板50的徑向上的不同位置設置有多個。即，設置孔51在板50的徑向上的不同位置設置有多個，溫度計70設置於各個設置孔51。例如，設置孔51與三個加熱片對應地設置有三處，在各自的上端插入有溫度計70。在設置孔51內的溫度計70的下方，形成用於積存惰性氣體G的空間51b。A plurality of thermometers 70 are provided at different positions in the radial direction of the plate 50. That is, a plurality of setting holes 51 are provided at different positions in the radial direction of the plate 50, and the thermometer 70 is provided in each setting hole 51. For example, three setting holes 51 are provided corresponding to three heating plates, and a thermometer 70 is inserted into each upper end. A space 51b for storing the inert gas G is formed below the thermometer 70 in the setting hole 51.
在各設置孔51的內側壁設置有供氣口52及排氣口55。供氣口52在比溫度計70更靠下側處開口，向溫度計70的下方的空間51b供給惰性氣體G。在板50設置有向供氣口52供給惰性氣體G的供氣路53。在供氣路53連接有供氣部54。供氣部54包含供氣裝置54a、質量流量控制器（Mass Flow Controller）（以下，稱為MFC）54b，經由未圖示的配管而與供氣路53連接。An air supply port 52 and an air exhaust port 55 are provided on the inner wall of each setting hole 51. The air supply port 52 opens at a lower side than the thermometer 70, and supplies the inert gas G to the space 51b below the thermometer 70. The plate 50 is provided with an air supply path 53 for supplying the inert gas G to the air supply port 52. The air supply path 53 is connected to an air supply unit 54. The air supply unit 54 includes an air supply device 54a and a mass flow controller (hereinafter referred to as MFC) 54b, and is connected to the air supply path 53 via a pipe not shown.
供氣裝置54a為惰性氣體G的供給源。作為惰性氣體G，優選為使用He。He的比重比水蒸氣（H 2）輕，因此He位於比從開口51a侵入並向溫度計70上升的水蒸氣（以下，稱為蒸汽V）更靠上方處。因此，在從處理液L上升來的蒸汽V與溫度計70之間介隔存在He，從而保護溫度計70。但是，作為惰性氣體G，也可使用N 2。 The gas supply device 54a is a supply source of the inert gas G. As the inert gas G, He is preferably used. The specific gravity of He is lighter than that of water vapor (H 2 ), so He is located above the water vapor (hereinafter referred to as steam V) that intrudes from the opening 51a and rises toward the thermometer 70. Therefore, He is interposed between the steam V rising from the processing liquid L and the thermometer 70, thereby protecting the thermometer 70. However, N 2 may also be used as the inert gas G.
MFC 54b設置於和供氣裝置54a與供氣路53之間連接的配管，是對惰性氣體G的每單位時間的供給流量進行調整的調整部。MFC 54b具有對流體的流量進行測量的質量流量計及對流量進行控制的電磁閥。The MFC 54b is provided in the piping connecting the gas supply device 54a and the gas supply path 53, and is a regulating unit that regulates the supply flow rate per unit time of the inert gas G. The MFC 54b has a mass flowmeter that measures the flow rate of the fluid and an electromagnetic valve that controls the flow rate.
排氣口55在比溫度計70更靠下側處開口，設置於與供氣口52不同的位置，將從供氣口52供給的惰性氣體G排出。不同位置包含在俯視時不重疊的位置及高度位置不同的位置中的一者或兩者。在本實施方式中，在俯視時隔著溫度計70而與供氣口52相向的位置設置有排氣口55。由此，從供氣口52供給的惰性氣體G以覆蓋溫度計70的檢測面的方式通過，並從排氣口55排出。另外，排氣口55設置於比供氣口52更靠開口51a側（比供氣口52更靠下方）。供氣口52優選為在溫度計70的下部空開間隔的同時設置於接近的位置。由此，從供氣口52供給的惰性氣體G朝向靠近開口51a側的排氣口55向下方流動，因此蒸汽V更不易從開口51a侵入。The exhaust port 55 opens at a lower side than the thermometer 70 and is disposed at a position different from the air supply port 52 to discharge the inert gas G supplied from the air supply port 52. The different positions include one or both of positions that do not overlap when viewed from above and positions at different heights. In the present embodiment, the exhaust port 55 is disposed at a position that is opposite to the air supply port 52 across the thermometer 70 when viewed from above. Thus, the inert gas G supplied from the air supply port 52 passes through in a manner that covers the detection surface of the thermometer 70 and is discharged from the exhaust port 55. In addition, the exhaust port 55 is disposed at a side closer to the opening 51a than the air supply port 52 (lower than the air supply port 52). The air supply port 52 is preferably disposed at a position close to the lower portion of the thermometer 70 while being spaced apart therefrom. Thus, the inert gas G supplied from the gas supply port 52 flows downward toward the gas exhaust port 55 on the side close to the opening 51 a , and therefore the steam V is less likely to intrude from the opening 51 a .
在本實施方式中，如圖1及圖2所示，設置於溫度計70的下方的供氣口52與溫度計70在上下方向上空開間隔地設置。由此，在從供氣口52供給比重輕的惰性氣體G時，在設置孔51內的溫度計70的下方形成惰性氣體G滯留的空間（滯留空間）。如此，通過在溫度計70的下方滯留惰性氣體G，可保護溫度計70免受蒸汽V的影響。為了使圖2的設置孔51內的滯留空間明確，由RS表示滯留空間的上下方向上的間隔。In the present embodiment, as shown in FIG. 1 and FIG. 2 , the air supply port 52 provided below the thermometer 70 is provided with a space therebetween in the vertical direction. Thus, when the inert gas G having a light specific gravity is supplied from the air supply port 52, a space (stagnation space) in which the inert gas G is retained is formed below the thermometer 70 in the setting hole 51. In this way, by retaining the inert gas G below the thermometer 70, the thermometer 70 can be protected from the influence of the steam V. In order to make the stagnation space in the setting hole 51 of FIG. 2 clear, the vertical spacing of the stagnation space is represented by RS.
另外，在本實施方式中，如圖1及圖2所示，供氣口52與排氣口55在設置孔51中設置於靠近溫度計70的位置。即，供氣口52及排氣口55在上下方向上與開口51a的距離比與溫度計70的距離大。如此，排氣口55與供氣口52相比設置於下方，排氣口55在設置孔51中設置於靠近溫度計70的位置，由此從排氣口55的下部至開口51a的空間比從排氣口55的下部至溫度計70的空間大。於是，通過從供氣口52供給惰性氣體G及從排氣口55排出惰性氣體G，在排氣口55的下方的空間中氣體的流動變少。由此，可防止蒸汽V從開口51a侵入，可保護溫度計70免受蒸汽的影響。為了使圖2中的以設置孔51內的排氣口55為邊界的上下的空間明確，由LS表示從排氣口55的下部至開口51a的空間的上下方向上的間隔，由US表示從排氣口55的下部至溫度計70的空間的上下方向上的間隔。In addition, in the present embodiment, as shown in FIG. 1 and FIG. 2 , the air supply port 52 and the exhaust port 55 are disposed in the setting hole 51 at a position close to the thermometer 70. That is, the distance between the air supply port 52 and the exhaust port 55 and the opening 51a in the vertical direction is greater than the distance between the air supply port 52 and the exhaust port 55 and the thermometer 70. In this way, the exhaust port 55 is disposed below the air supply port 52, and the exhaust port 55 is disposed in the setting hole 51 at a position close to the thermometer 70, so that the space from the lower part of the exhaust port 55 to the opening 51a is larger than the space from the lower part of the exhaust port 55 to the thermometer 70. Therefore, by supplying the inert gas G from the air supply port 52 and discharging the inert gas G from the exhaust port 55, the flow of the gas in the space below the exhaust port 55 is reduced. Thus, the steam V can be prevented from intruding from the opening 51a, and the thermometer 70 can be protected from the influence of the steam. In order to make the upper and lower spaces bounded by the exhaust port 55 in the setting hole 51 in FIG. 2 clear, the interval in the upper and lower directions of the space from the lower part of the exhaust port 55 to the opening 51a is represented by LS, and the interval in the upper and lower directions of the space from the lower part of the exhaust port 55 to the thermometer 70 is represented by US.
在板50設置有從排氣口55對惰性氣體G進行排氣的排氣路56。在排氣路56連接有排氣部57。排氣部57包含排氣裝置57a、質量流量控制器（以下，稱為MFC）57b，經由未圖示的配管而與排氣路56連接。The plate 50 is provided with an exhaust path 56 for exhausting the inert gas G from the exhaust port 55. The exhaust section 57 is connected to the exhaust path 56. The exhaust section 57 includes an exhaust device 57a and a mass flow controller (hereinafter referred to as MFC) 57b, and is connected to the exhaust path 56 via a pipe (not shown).
排氣裝置57a是對惰性氣體G進行抽吸的裝置。MFC 57b設置於和排氣裝置57a與排氣路56之間連接的配管，是用於對利用排氣裝置57a的每單位時間的排氣流量進行調整的調整部。MFC 57b具有對流體的流量進行測量的質量流量計及對流量進行控制的電磁閥。The exhaust device 57a is a device for sucking the inert gas G. The MFC 57b is provided in the piping connecting the exhaust device 57a and the exhaust path 56, and is a regulating unit for adjusting the exhaust flow rate per unit time using the exhaust device 57a. The MFC 57b has a mass flowmeter for measuring the flow rate of the fluid and an electromagnetic valve for controlling the flow rate.
驅動部80是使板50相對於基板W進退的機構。驅動部80具有支撐部81、臂82、升降機構83。支撐部81為環狀的構件，在其內側插通有板50，凸緣50b與上部抵接，由此水平地對板50進行支撐。臂82為一端固定於支撐部81且沿水平方向延伸的構件。The driving part 80 is a mechanism for moving the plate 50 forward and backward relative to the substrate W. The driving part 80 has a supporting part 81, an arm 82, and a lifting mechanism 83. The supporting part 81 is a ring-shaped component, and the plate 50 is inserted into the inner side of the supporting part 81, and the flange 50b abuts against the upper part, thereby horizontally supporting the plate 50. The arm 82 is a component that is fixed at one end to the supporting part 81 and extends in the horizontal direction.
升降機構83豎立設置於台架，是經由臂82而使板50升降的機構。升降機構83具有沿與旋轉體10的軸平行的方向移動的可動部，在可動部安裝有支撐部81的另一端。升降機構83能夠適用例如氣缸、滾珠螺桿機構等使可動部移動的各種機構，但省略詳情。升降機構83使板50下降至與基板W的表面之間形成間隔d的位置。所述間隔d例如為4 mm以下，但維持為與處理液L之間空出2 mm左右的間隙。The lifting mechanism 83 is vertically arranged on the stage, and is a mechanism for lifting the plate 50 via the arm 82. The lifting mechanism 83 has a movable part that moves in a direction parallel to the axis of the rotating body 10, and the other end of the support part 81 is installed on the movable part. The lifting mechanism 83 can be applied to various mechanisms such as a cylinder, a ball screw mechanism, etc. that move the movable part, but the details are omitted. The lifting mechanism 83 lowers the plate 50 to a position where a gap d is formed between the plate 50 and the surface of the substrate W. The gap d is, for example, less than 4 mm, but is maintained to leave a gap of about 2 mm between the plate 50 and the processing liquid L.
此外，處理液L被供給部40中的未圖示的加熱裝置加熱至預先設定的溫度，被供給至基板W並被加熱部60加熱。由此，可使供給至基板W的處理液L在維持預先設定的溫度的狀態下遍佈基板W的整個面。特別是，通過使外周側的加熱器61為高溫，可獲得提高溫度容易下降的基板W的外周側的溫度的效果。Furthermore, the processing liquid L is heated to a preset temperature by a heating device (not shown) in the supply unit 40, supplied to the substrate W, and heated by the heating unit 60. Thus, the processing liquid L supplied to the substrate W can be spread over the entire surface of the substrate W while maintaining the preset temperature. In particular, by setting the temperature of the heater 61 on the peripheral side to a high temperature, the temperature of the peripheral side of the substrate W, which is prone to temperature drop, can be increased.
（控制部） 控制部90對基板處理裝置1的各部進行控制。為了實現基板處理裝置1的各種功能，控制部90具有執行程式（program）的處理器、存儲程式或動作條件等各種信息的存儲器（memory）、驅動各元件的驅動電路。即，控制部90具有對旋轉機構20、保持部30、供給部40、MFC 54b、MFC 57b、加熱部60、驅動部80等進行控制的機構控制部91。 (Control unit) The control unit 90 controls each unit of the substrate processing device 1. In order to realize various functions of the substrate processing device 1, the control unit 90 has a processor for executing a program, a memory for storing various information such as a program or operation conditions, and a drive circuit for driving each component. That is, the control unit 90 has a mechanism control unit 91 for controlling the rotating mechanism 20, the holding unit 30, the supply unit 40, the MFC 54b, the MFC 57b, the heating unit 60, the drive unit 80, etc.
另外，本實施方式的控制部90具有加熱控制部92、流量控制部93。加熱控制部92根據由溫度計70測定出的溫度來對加熱部60的溫度進行控制。即，加熱控制部92進行根據處理液L的溫度來對加熱器61的輸出進行控制的反饋控制。例如，在由溫度計70測定出的溫度比規定的溫度低的情況下，使與所述溫度計70對應的加熱器61的溫度上升。例如，與板50的中心側相鄰的加熱器61對應於各溫度計70。In addition, the control unit 90 of the present embodiment includes a heating control unit 92 and a flow control unit 93. The heating control unit 92 controls the temperature of the heating unit 60 according to the temperature measured by the thermometer 70. That is, the heating control unit 92 performs feedback control to control the output of the heater 61 according to the temperature of the treatment liquid L. For example, when the temperature measured by the thermometer 70 is lower than the specified temperature, the temperature of the heater 61 corresponding to the thermometer 70 is increased. For example, the heaters 61 adjacent to the center side of the plate 50 correspond to each thermometer 70.
流量控制部93通過MFC 54b、MFC 57b對惰性氣體G相對於設置孔51的供給流量及排氣流量進行控制，以便在設置孔51內充滿惰性氣體G的同時不從開口51a流出。若惰性氣體G的供給流量過多，則從設置孔51漏出而處理液L的溫度下降。若惰性氣體G的排氣流量過多，則會吸入蒸汽V，因此對溫度計70造成影響，並且吸入基板W的被處理面上的處理液L的周圍的環境，由此處理液L的溫度下降。因此，基本上優選為控制成惰性氣體G的供給流量與排氣流量同等。The flow control unit 93 controls the supply flow rate and exhaust flow rate of the inert gas G relative to the setting hole 51 through the MFC 54b and the MFC 57b so that the setting hole 51 is filled with the inert gas G and does not flow out from the opening 51a. If the supply flow rate of the inert gas G is too high, it leaks from the setting hole 51 and the temperature of the processing liquid L drops. If the exhaust flow rate of the inert gas G is too high, the vapor V is sucked in, thereby affecting the thermometer 70, and the environment around the processing liquid L on the processing surface of the substrate W is sucked in, thereby dropping the temperature of the processing liquid L. Therefore, it is basically preferred to control the supply flow rate of the inert gas G to be equal to the exhaust flow rate.
[動作] 在所述圖1及圖2的基礎上，參照圖3的流程圖對如以上所述的本實施方式的基板處理裝置1的動作進行說明。此外，通過如下所述的流程對基板W進行處理的基板處理方法、處理基板製造方法也為本實施方式的一形態。 [Action] Based on the above-mentioned FIG. 1 and FIG. 2, the action of the substrate processing device 1 of the present embodiment as described above is explained with reference to the flowchart of FIG. 3. In addition, a substrate processing method and a processed substrate manufacturing method for processing a substrate W according to the following process are also one form of the present embodiment.
首先，如圖1所示，板50處於上方的待機位置。此時，在板50與工作台11之間設置有能夠搬入由未圖示的搬送機器人的手支撐的基板W的間隔。First, as shown in Fig. 1, the plate 50 is in the upper standby position. At this time, a gap is provided between the plate 50 and the worktable 11, into which a substrate W supported by the hand of a transfer robot (not shown) can be carried.
另外，通過預先對加熱部60的加熱器61通電，板50的與基板W相向的面被加熱，並保持於規定溫度（例如，溫度範圍180℃～225℃內的溫度）。此外，例如，基板W的外周區域因散熱而溫度下降最多，因此可將外周區域的加熱器61加熱為比其他區域溫度高。In addition, by energizing the heater 61 of the heating unit 60 in advance, the surface of the plate 50 facing the substrate W is heated and maintained at a predetermined temperature (for example, a temperature within a temperature range of 180°C to 225°C). In addition, for example, the peripheral area of the substrate W has the largest temperature drop due to heat dissipation, so the heater 61 of the peripheral area can be heated to a higher temperature than other areas.
在此狀態下，搭載於搬送機器人的手的基板W被搬入至板50與旋轉體10之間，其周緣由多個保持銷31支撐，由此保持於旋轉體10的工作台11上（步驟S01）。此時，定位成基板W的中心與旋轉體10的旋轉的軸一致。In this state, the substrate W carried by the hand of the transfer robot is carried between the plate 50 and the rotating body 10, and its periphery is supported by a plurality of holding pins 31, thereby being held on the worktable 11 of the rotating body 10 (step S01). At this time, the center of the substrate W is positioned so as to coincide with the axis of rotation of the rotating body 10.
供氣部54開始從供氣口52向設置孔51供給惰性氣體G，由此使空間51b充滿惰性氣體G（步驟S02）。繼而，利用排氣部57開始從排氣口55對惰性氣體G進行排氣（步驟S03）。MFC 54b、MFC 57b對惰性氣體G的供給流量及排氣流量進行調整，以使空間51b中始終存在惰性氣體G，並且惰性氣體G不會從開口51a漏出。The gas supply unit 54 starts to supply the inert gas G from the gas supply port 52 to the setting hole 51, thereby filling the space 51b with the inert gas G (step S02). Then, the exhaust unit 57 starts to exhaust the inert gas G from the exhaust port 55 (step S03). The MFC 54b and the MFC 57b adjust the supply flow rate and exhaust flow rate of the inert gas G so that the inert gas G always exists in the space 51b and the inert gas G does not leak from the opening 51a.
旋轉體10以比較低的規定速度（例如，50 rpm左右）旋轉。由此，基板W與保持部30一起以所述規定速度旋轉（步驟S04）。然後，板50下降至與基板W的被處理面之間形成規定間隔d（例如，4 mm以下）的位置（步驟S05）。The rotating body 10 rotates at a relatively low predetermined speed (e.g., about 50 rpm). As a result, the substrate W rotates together with the holding portion 30 at the predetermined speed (step S04). Then, the plate 50 is lowered to a position where a predetermined distance d (e.g., less than 4 mm) is formed between the plate 50 and the processed surface of the substrate W (step S05).
處理液供給機構411將磷酸溶液供給至基板W的被處理面，並且開始利用溫度計70進行磷酸溶液的溫度測定（步驟S06）。在供給磷酸溶液的期間，始終進行溫度測定。如上所述，磷酸溶液預先在供給部40中被加熱。通過磷酸溶液朝向旋轉的基板W的外周依次移動，基板W的表面的純水被磷酸溶液置換，同時通過蝕刻將氮化膜去除。The processing liquid supply mechanism 411 supplies the phosphoric acid solution to the processing surface of the substrate W, and starts to measure the temperature of the phosphoric acid solution using the thermometer 70 (step S06). The temperature is always measured during the supply of the phosphoric acid solution. As described above, the phosphoric acid solution is preheated in the supply unit 40. As the phosphoric acid solution moves toward the outer periphery of the rotating substrate W, the pure water on the surface of the substrate W is replaced by the phosphoric acid solution, and the nitride film is removed by etching.
供給至基板W的中心附近的磷酸溶液隨著向基板W的外周移動，熱容易逃逸，但在本實施方式中，板50向基板W接近至間隔d，因此磷酸溶液被加熱器61加熱，可抑制因溫度下降引起的處理速率的下降。例如，磷酸溶液的溫度優選為維持於150℃～160℃左右。The phosphoric acid solution supplied to the vicinity of the center of the substrate W tends to lose heat as it moves toward the periphery of the substrate W. However, in the present embodiment, the plate 50 is close to the substrate W to the distance d, so the phosphoric acid solution is heated by the heater 61, and the decrease in the processing rate due to the temperature drop can be suppressed. For example, the temperature of the phosphoric acid solution is preferably maintained at about 150°C to 160°C.
處理中的磷酸溶液的溫度如上所述由溫度計70測定。根據測定出的溫度，加熱控制部92對加熱器61的溫度進行控制。即，提高與溫度下降的區域對應的加熱器61的溫度。通過在設置孔51的空間51b充滿惰性氣體G，溫度計70的檢測面被惰性氣體G覆蓋，因此可防止來自經加熱的磷酸溶液的蒸汽V附著於檢測面。由此，可在維持溫度計70的性能的同時，正常地對液溫進行測定。另外，惰性氣體G不會從開口51a漏出，因此可防止磷酸溶液的溫度因惰性氣體G而下降。The temperature of the phosphoric acid solution being processed is measured by the thermometer 70 as described above. Based on the measured temperature, the heating control unit 92 controls the temperature of the heater 61. That is, the temperature of the heater 61 corresponding to the area where the temperature drops is increased. By filling the space 51b of the setting hole 51 with the inert gas G, the detection surface of the thermometer 70 is covered with the inert gas G, thereby preventing the vapor V from the heated phosphoric acid solution from adhering to the detection surface. As a result, the liquid temperature can be measured normally while maintaining the performance of the thermometer 70. In addition, the inert gas G does not leak from the opening 51a, thereby preventing the temperature of the phosphoric acid solution from dropping due to the inert gas G.
當經過規定的處理時間時（步驟S07），處理液供給機構411停止磷酸溶液的供給，並且也停止利用溫度計70的溫度測定（步驟S08）。When the prescribed treatment time has elapsed (step S07), the treatment solution supply mechanism 411 stops supplying the phosphoric acid solution and also stops measuring the temperature using the thermometer 70 (step S08).
接著，處理液供給機構412將純水供給至基板W的表面（步驟S09）。當向旋轉的基板W的表面供給純水時，所述純水朝向基板W的外周依次移動，由此將基板W的表面的磷酸溶液沖掉。然後，當經過規定的清洗時間時（步驟S10），處理液供給機構412停止純水的供給（步驟S11）。Next, the processing liquid supply mechanism 412 supplies pure water to the surface of the substrate W (step S09). When the pure water is supplied to the surface of the rotating substrate W, the pure water moves toward the periphery of the substrate W, thereby washing away the phosphoric acid solution on the surface of the substrate W. Then, when a predetermined cleaning time has passed (step S10), the processing liquid supply mechanism 412 stops supplying pure water (step S11).
基板W停止旋轉（步驟S12），板50上升（步驟S13）。其後，停止由供氣部54進行的惰性氣體G的供給、由排氣部57進行的排氣（步驟S14）。然後，搬送機器人的手插入至基板W的下方，將保持部30對基板W的保持釋放，利用搬送機器人的手搬出基板W（步驟S15）。The substrate W stops rotating (step S12), and the plate 50 rises (step S13). Thereafter, the supply of the inert gas G by the gas supply unit 54 and the exhaust by the exhaust unit 57 are stopped (step S14). Then, the hand of the transport robot is inserted under the substrate W, the holding unit 30 releases the substrate W, and the substrate W is carried out by the hand of the transport robot (step S15).
[效果] （1）如以上所述的本實施方式的基板處理裝置1具有：旋轉體10，使由保持部30保持的基板W旋轉；供給部40，向基板W的被處理面供給經加熱的處理液L；板50，設置於與被處理面相向的位置且能夠沿與基板W相接/分離的方向移動；驅動部80，使板50相對於基板W進退；加熱部60，設置於板50，對供給至基板W的被處理面的處理液L進行加熱；溫度計70，收容於形成在板50且在被處理面側開口的設置孔51，以非接觸方式對供給至基板W的被處理面的處理液L的溫度進行測定；供氣口52，在設置孔51的內側壁的比溫度計70更靠下側處開口，向溫度計70的下方供給惰性氣體G；排氣口55，在設置孔51的內側壁的與供氣口52不同的位置且比溫度計70更靠下側處開口，將從供氣口52供給的惰性氣體G排出；以及控制部90，根據由溫度計70測定出的溫度來對加熱部60進行控制。 [Effects] (1) The substrate processing device 1 of the present embodiment as described above comprises: a rotating body 10 for rotating the substrate W held by the holding part 30; a supply part 40 for supplying a heated processing liquid L to the processing surface of the substrate W; a plate 50, which is arranged at a position opposite to the processing surface and can move in a direction of contact with/separation from the substrate W; a driving part 80 for moving the plate 50 forward and backward relative to the substrate W; a heating part 60, which is arranged on the plate 50 and heats the processing liquid L supplied to the processing surface of the substrate W; a thermometer 70, which is accommodated in a temperature sensor formed on the plate 50 and on the processing surface. The side-opening setting hole 51 measures the temperature of the processing liquid L supplied to the processing surface of the substrate W in a non-contact manner; the air supply port 52 opens on the inner wall of the setting hole 51 at a lower side than the thermometer 70, and supplies the inert gas G below the thermometer 70; the exhaust port 55 opens on the inner wall of the setting hole 51 at a different position from the air supply port 52 and at a lower side than the thermometer 70, and exhausts the inert gas G supplied from the air supply port 52; and the control unit 90 controls the heating unit 60 according to the temperature measured by the thermometer 70.
本實施方式的基板處理方法中，旋轉體10使由保持部30保持的基板W旋轉，形成於設置在與基板W的被處理面相向的位置且能夠沿與基板W相接/分離的方向移動的板50，從設置於在被處理面側開口的設置孔51的供氣口52供給惰性氣體G，從設置於設置孔51的排氣口55將惰性氣體G排出，使板50接近基板W，供氣部54向基板W的被處理面供給經加熱的處理液L，利用設置於板50的加熱部60對處理液L進行加熱，利用收容於設置孔51內且設置於供氣口52及排氣口55之上的溫度計70，以非接觸方式對處理液L的溫度進行測定，控制部90根據由溫度計70測定出的溫度來對加熱部60進行控制。In the substrate processing method of the present embodiment, the rotating body 10 rotates the substrate W held by the holding part 30, and the plate 50 is arranged at a position facing the processed surface of the substrate W and can move in the direction of contacting/separating from the substrate W. The inert gas G is supplied from the gas supply port 52 of the setting hole 51 opened on the side of the processed surface, and the inert gas G is exhausted from the exhaust port 55 provided in the setting hole 51, so that the plate 50 contacts the substrate W. Near the substrate W, the air supply section 54 supplies heated processing liquid L to the processed surface of the substrate W, and the processing liquid L is heated by a heating section 60 arranged on the plate 50. The temperature of the processing liquid L is measured in a non-contact manner by a thermometer 70 accommodated in the setting hole 51 and arranged on the air supply port 52 and the exhaust port 55. The control section 90 controls the heating section 60 according to the temperature measured by the thermometer 70.
因此，利用設置於板50的設置孔51的溫度計70對處理液L的溫度進行測定，根據測定溫度來對加熱部60的溫度進行控制，由此可將處理液L維持於所期望的溫度，以所期望的蝕刻速率對基板W進行處理。特別是，通過設置孔51內的惰性氣體G保護溫度計70免受蒸汽V的影響，可維持對處理液L的溫度進行測定的溫度計70的性能，並且對設置孔51內的惰性氣體G進行排氣，因此可防止惰性氣體G從設置孔51流出，抑制處理液L的溫度下降。Therefore, the temperature of the processing liquid L is measured by the thermometer 70 provided in the setting hole 51 of the plate 50, and the temperature of the heating part 60 is controlled according to the measured temperature, thereby maintaining the processing liquid L at a desired temperature and processing the substrate W at a desired etching rate. In particular, the performance of the thermometer 70 for measuring the temperature of the processing liquid L can be maintained by protecting the thermometer 70 from the influence of the steam V by the inert gas G in the setting hole 51, and the inert gas G in the setting hole 51 is exhausted, so that the inert gas G can be prevented from flowing out of the setting hole 51, and the temperature drop of the processing liquid L can be suppressed.
此處，例如，如圖4A所示，在形成於板50的設置孔51，在僅僅收容有溫度計70的情況下，來自處理液L的蒸汽V從設置孔51的開口51a侵入。因此，溫度計70暴露於高溫的蒸汽環境，會導致變形或破損、測定精度的下降等。另外，如圖4B所示，即使向在溫度計70的周圍設置有間隙的設置孔51供給惰性氣體G而保護溫度計70，由於從開口51a漏出的惰性氣體G，處理液L的溫度也會下降，處理性能下降。Here, for example, as shown in FIG. 4A , in the case where only the thermometer 70 is accommodated in the setting hole 51 formed in the plate 50, the steam V from the processing liquid L intrudes from the opening 51a of the setting hole 51. Therefore, the thermometer 70 is exposed to the high-temperature steam environment, which may cause deformation or damage, a decrease in measurement accuracy, etc. In addition, as shown in FIG. 4B , even if the inert gas G is supplied to the setting hole 51 with a gap around the thermometer 70 to protect the thermometer 70, the inert gas G leaking from the opening 51a will cause the temperature of the processing liquid L to drop, and the processing performance will drop.
另一方面，本實施方式可防止高溫處理液L的蒸汽V向設置孔51侵入或惰性氣體G從設置孔51漏出，而對處理液L的溫度進行測定。即，通過供給惰性氣體G來保護溫度計70免受處理液L的蒸汽V的影響，由此可防止溫度計70的變形或破損、測定性能的下降而維持性能。另外，通過惰性氣體G的排氣，可防止由惰性氣體G的洩漏引起的處理液L的溫度下降而抑制基板W的處理速率的下降，實現高工藝性能與再現性。On the other hand, the present embodiment can prevent the vapor V of the high-temperature processing liquid L from invading the setting hole 51 or the inert gas G from leaking from the setting hole 51, and measure the temperature of the processing liquid L. That is, by supplying the inert gas G to protect the thermometer 70 from the vapor V of the processing liquid L, the thermometer 70 can be prevented from being deformed or damaged, and the measurement performance can be maintained. In addition, by exhausting the inert gas G, the temperature of the processing liquid L caused by the leakage of the inert gas G can be prevented from decreasing, and the processing rate of the substrate W can be suppressed, thereby achieving high process performance and reproducibility.
特別是，通過使供氣口52與排氣口55處於不同的位置，容易形成覆蓋溫度計70的檢測面的流動。例如，通過使供氣口52與排氣口55處於在俯視時不重疊的位置，產生在俯視時從供氣口52供給的惰性氣體G通過檢測面的下部而朝向排氣口55的流動，由此檢測面被惰性氣體G覆蓋。收容溫度計70的設置孔51的直徑比較小（例如，10 mm左右），因此通過如此使供氣與排氣處於不同的位置，可使惰性氣體G遍佈溫度計70的整個檢測面。另外，通過將惰性氣體G供給至設置孔51，使惰性氣體G在設置孔51中滯留後進行排氣，可形成由惰性氣體G構成的保護層。In particular, by locating the air supply port 52 and the air exhaust port 55 at different positions, it is easy to form a flow covering the detection surface of the thermometer 70. For example, by locating the air supply port 52 and the air exhaust port 55 at positions that do not overlap when viewed from above, the inert gas G supplied from the air supply port 52 flows toward the air exhaust port 55 through the lower part of the detection surface when viewed from above, and the detection surface is covered with the inert gas G. The diameter of the setting hole 51 for accommodating the thermometer 70 is relatively small (for example, about 10 mm), so by locating the air supply and the air exhaust at different positions in this way, the inert gas G can be spread over the entire detection surface of the thermometer 70. In addition, by supplying the inert gas G to the setting hole 51 and exhausting the inert gas G after the inert gas G is retained in the setting hole 51, a protective layer made of the inert gas G can be formed.
（2）加熱部60在板50的徑向上的不同位置設置有多個，溫度計70在板50的徑向上的不同位置設置有多個。因此，可根據被處理面上的處理液L的溫度分佈的差異，控制部90對加熱部60的溫度進行調整，而防止處理速率的下降，因此可進行良好的處理。此外，控制部90也可根據被處理面內的位置來改變處理速率。(2) A plurality of heating units 60 are provided at different positions in the radial direction of the plate 50, and a plurality of thermometers 70 are provided at different positions in the radial direction of the plate 50. Therefore, the control unit 90 can adjust the temperature of the heating unit 60 according to the difference in the temperature distribution of the treatment liquid L on the surface to be treated, thereby preventing the treatment rate from decreasing, thereby achieving good treatment. In addition, the control unit 90 can also change the treatment rate according to the position within the surface to be treated.
（3）排氣口55設置於比供氣口52更靠下方處。因此，產生來自供氣口52的惰性氣體G向下方流動的氣流，因此蒸汽V難以上升，可防止蒸汽V的侵入。(3) The exhaust port 55 is provided below the air supply port 52. Therefore, a flow of the inert gas G from the air supply port 52 is generated to flow downward, so that the steam V is difficult to rise, and the intrusion of the steam V can be prevented.
（4）惰性氣體G是比重比蒸汽V（水蒸氣）輕的氣體。因此，惰性氣體G來到蒸汽V的上方，因此在從基板W的被處理面上的處理液L上升來的蒸汽V與溫度計70之間介隔存在惰性氣體G，對溫度計70進行保護。(4) The inert gas G is a gas with a specific gravity lighter than that of the steam V (water vapor). Therefore, the inert gas G comes above the steam V, and the inert gas G is interposed between the steam V rising from the processing liquid L on the processing surface of the substrate W and the thermometer 70, thereby protecting the thermometer 70.
（5）供氣口52與溫度計70在上下方向上空開間隔RS地設置。因此，在設置孔51的溫度計70的下方形成有惰性氣體G滯留的空間。因此，通過滯留於溫度計70的下方的惰性氣體G的層來保護溫度計70。(5) The air supply port 52 and the thermometer 70 are disposed at a distance RS in the vertical direction. Therefore, a space where the inert gas G is retained is formed below the thermometer 70 in the hole 51 . Therefore, the thermometer 70 is protected by the layer of the inert gas G retained below the thermometer 70 .
（變形例） （1）如圖5所示，供氣路53可設為空開間隙地覆蓋溫度計70的周圍的筒狀。也可通過使供氣口52為水平方向上長的狹縫狀，使惰性氣體G容易遍佈溫度計70的檢測面。另外，也可通過相對於圖2所示的供氣路53的直徑減小供氣口52的直徑，對於圖5所示的供氣路53及供氣口52與溫度計70的間隙，使供氣口52的部分比供氣路53的部分變窄，而提高惰性氣體G的流速。 (Variation) (1) As shown in FIG. 5 , the air supply path 53 may be provided in a cylindrical shape covering the periphery of the thermometer 70 with a gap. The air supply port 52 may also be provided in a horizontally long slit shape so that the inert gas G can be easily distributed over the detection surface of the thermometer 70. In addition, the flow rate of the inert gas G may be increased by reducing the diameter of the air supply port 52 relative to the diameter of the air supply path 53 shown in FIG. 2 , and making the air supply port 52 narrower than the air supply path 53 for the air supply path 53 and the gap between the air supply port 52 and the thermometer 70 shown in FIG. 5 .
（2）可具有：閥，設置於供氣部54，使惰性氣體G的流量為規定量；測定部，設置於供氣部54，對惰性氣體G的供給流量進行測定；以及調整部，對惰性氣體G的流量進行調整，控制部90對調整部進行控制，以根據由測定部所得的測定結果來對排氣流量進行調整。例如，如圖6所示，可設置流量計54c（測定部）與針閥54d（閥）來代替供氣裝置54a的MFC 54b。在此情況下，針閥54d使惰性氣體G的流量為預先設定的規定量，將利用流量計54c對其進行測定而得的值輸入至控制部90。流量控制部93通過排氣裝置57a的MFC 57b對排氣流量進行調整，以使其成為與所輸入的測定值相同的流量。由此，可簡化控制結構，並且可降低裝置成本。(2) It may include: a valve provided in the air supply section 54 to make the flow rate of the inert gas G a predetermined value; a measuring section provided in the air supply section 54 to measure the supply flow rate of the inert gas G; and an adjusting section to adjust the flow rate of the inert gas G, wherein the control section 90 controls the adjusting section to adjust the exhaust flow rate according to the measurement result obtained by the measuring section. For example, as shown in FIG. 6 , a flow meter 54c (measuring section) and a needle valve 54d (valve) may be provided in place of the MFC 54b of the air supply device 54a. In this case, the needle valve 54d makes the flow rate of the inert gas G a predetermined value set in advance, and the value measured by the flow meter 54c is input to the control section 90. The flow control unit 93 adjusts the exhaust gas flow rate through the MFC 57b of the exhaust device 57a so that it becomes the same flow rate as the input measurement value. This simplifies the control structure and reduces the device cost.
（3）加熱部60可為各加熱器61包含均熱板的結構。另外，加熱部60也可使用通過鹵素燈或發光二極體（Light Emitting Diode，LED）等光直接對基板W或處理液L進行加熱的加熱部。在所述形態中，通過與多個加熱部60對應地分別設置溫度計70，使對溫度進行測定的區域與進行加熱的區域近似，但加熱部60的數量與溫度計70的數量也可未必對應。(3) The heating unit 60 may be a structure in which each heater 61 includes a heat spreader. Alternatively, the heating unit 60 may be a heating unit that directly heats the substrate W or the processing liquid L using light such as a halogen lamp or a light emitting diode (LED). In the above embodiment, the temperature measuring area and the heating area are approximated by providing the thermometers 70 corresponding to the plurality of heating units 60, but the number of heating units 60 and the number of thermometers 70 may not necessarily correspond.
（4）基板處理裝置1的處理只要是處理液L及基板W的溫度對處理速率造成影響的處理，則處理的內容及處理液L並不限定於所述例示的內容及處理液L。作為處理對象的基板W及膜也不限定於所述例示的基板及膜。(4) The processing performed by the substrate processing apparatus 1 is not limited to the above-described processing contents and processing liquid L as long as the temperatures of the processing liquid L and the substrate W affect the processing rate. The substrate W and film to be processed are also not limited to the above-described substrates and films.
[其他實施方式] 以上，對本發明的實施方式及各部的變形例進行了說明，但所述實施方式或各部的變形例是作為一例而提示，並不意圖限定發明的範圍。所述這些新穎的實施方式能夠以其他各種方式實施，可在不脫離發明的主旨的範圍內進行各種省略、置換、變更。這些實施方式或其變形包含於發明的範圍或主旨中，並且包含於申請專利範圍所記載的發明中。 [Other embodiments] The embodiments and variations of each part of the present invention have been described above, but the embodiments or variations of each part are provided as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other ways and can be omitted, replaced, or changed in various ways without departing from the main purpose of the invention. These embodiments or variations thereof are included in the scope or main purpose of the invention and are included in the invention described in the scope of the patent application.
1:基板處理裝置 10:旋轉體 11:工作台 12:隔板 12a、13a:排液口 13:杯 20:旋轉機構 21:驅動源 30:保持部 31:保持銷 40:供給部 41a:處理液槽 41b:處理液供給管 41c:閥 41d、54c:流量計 50:板 50a:噴出口 50b:凸緣 51:設置孔 51a:開口 51b:空間 52:供氣口 53:供氣路 54:供氣部 54a:供氣裝置 54b、57b:MFC 54d:針閥 55:排氣口 56:排氣路 57:排氣部 57a:排氣裝置 60:加熱部 61:加熱器 70:溫度計 80:驅動部 81:支撐部 82:臂 83:升降機構 90:控制部 91:機構控制部 92:加熱控制部 93:流量控制部 411、412:處理液供給機構 1: substrate processing device 10: rotating body 11: workbench 12: partition 12a, 13a: liquid discharge port 13: cup 20: rotating mechanism 21: driving source 30: holding part 31: holding pin 40: supply part 41a: processing liquid tank 41b: processing liquid supply pipe 41c: valve 41d, 54c: flow meter 50: plate 50a: spray port 50b: flange 51: setting hole 51a: opening 51b: space 52: air supply port 53: air supply path 54: air supply part 54a: air supply device 54b, 57b: MFC 54d: needle valve 55: exhaust port 56: Exhaust path 57: Exhaust section 57a: Exhaust device 60: Heating section 61: Heater 70: Thermometer 80: Driving section 81: Support section 82: Arm 83: Lifting mechanism 90: Control section 91: Mechanism control section 92: Heating control section 93: Flow control section 411, 412: Processing liquid supply mechanism
圖1是表示實施方式的基板處理裝置的結構的圖。 圖2是表示在圖1的設置孔收容有溫度計的板的內部結構的軸向剖面圖。 圖3是表示實施方式的基板處理裝置的處理流程的流程圖。 圖4A及圖4B是表示收容有溫度計的板的比較例的剖面圖。 圖5是表示在設置孔收容有溫度計的板的變形例的剖面圖。 圖6是表示惰性氣體的供氣排氣控制的變形例的說明圖。 FIG. 1 is a diagram showing the structure of a substrate processing apparatus according to an embodiment. FIG. 2 is an axial cross-sectional view showing the internal structure of a plate having a thermometer accommodated in a setting hole of FIG. 1 . FIG. 3 is a flow chart showing a processing flow of a substrate processing apparatus according to an embodiment. FIG. 4A and FIG. 4B are cross-sectional views showing a comparative example of a plate having a thermometer accommodated in a setting hole. FIG. 5 is a cross-sectional view showing a modified example of a plate having a thermometer accommodated in a setting hole. FIG. 6 is an explanatory view showing a modified example of supply and exhaust control of an inert gas.
1:基板處理裝置 1: Substrate processing equipment
10:旋轉體 10: Rotating body
11:工作台 11: Workbench
12:隔板 12: Partition
12a、13a:排液口 12a, 13a: Drain port
13:杯 13: Cup
20:旋轉機構 20: Rotating mechanism
21:驅動源 21: Driving source
30:保持部 30:Maintenance Department
31:保持銷 31: Retaining pin
40:供給部 40: Supply Department
41a:處理液槽 41a: Treatment tank
41b:處理液供給管 41b: Treatment liquid supply pipe
41c:閥 41c: Valve
41d:流量計 41d: Flow meter
50:板 50: Board
50a:噴出口 50a: Spray outlet
50b:凸緣 50b: flange
51:設置孔 51: Setting hole
51a:開口 51a: Opening
51b:空間 51b: Space
52:供氣口 52: Air supply port
53:供氣路 53: Gas supply line
54:供氣部 54: Air supply department
54a:供氣裝置 54a: Air supply device
54b、57b:MFC 54b, 57b: MFC
54d:針閥 54d: Needle valve
55:排氣口 55: Exhaust port
56:排氣路 56: Exhaust duct
57:排氣部 57: Exhaust section
57a:排氣裝置 57a: Exhaust device
60:加熱部 60: Heating section
61:加熱器 61: Heater
70:溫度計 70: Thermometer
80:驅動部 80: Drive Department
81:支撐部 81: Support part
82:臂 82: Arm
83:升降機構 83: Lifting mechanism
90:控制部 90: Control Department
91:機構控制部 91:Institutional Control Department
92:加熱控制部 92: Heating control unit
93:流量控制部 93: Flow Control Department
411、412:處理液供給機構 411, 412: Treatment fluid supply mechanism
L:處理液 L: Treatment liquid
W:基板 W: Substrate
Claims (9)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022158339 | 2022-09-30 | ||
| JP2022-158339 | 2022-09-30 | ||
| JP2023-130354 | 2023-08-09 | ||
| JP2023130354A JP2024052540A (en) | 2022-09-30 | 2023-08-09 | Wafer processing device and wafer processing method |
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| TW202415455A true TW202415455A (en) | 2024-04-16 |
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| JPS5841431U (en) | 1981-09-14 | 1983-03-18 | 松下電工株式会社 | ventilation roof |
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