TWI822590B - Wafer placement state detection method, semiconductor process chamber and apparatus - Google Patents

Abstract

A method for detecting wafer placement status in a semiconductor process chamber, wherein the semiconductor process chamber includes a cavity and a bearing disc set in the cavity, the bearing disc is used to carry the wafer and keep the bearing disc at the set temperature value, and the bearing disc is equipped with a temperature detector, the method includes: placing the wafer on the bearing disc and obtaining the minimum actual temperature detection value detected by the temperature detector within the preset time; Judge whether the minimum actual temperature detection value is lower than the preset temperature value; If yes, it is determined that the wafer position is normal and the process continues; If not, it is judged that the wafer position is abnormal.

Description

Wafer placement status detection method, semiconductor process chamber and equipment

The present invention relates to the field of semiconductor process equipment, and specifically, to a method for detecting a wafer placement state, a semiconductor process chamber for implementing the method for detecting a wafer placement state, and a semiconductor process equipment including the semiconductor process chamber.

Dry glue removal refers to using plasma to remove the photoresist on the wafer. Compared with the wet glue removal method, dry glue removal has better effect and faster speed. In modern integrated circuit manufacturing, the wafer is usually placed on a carrier tray in a semiconductor process chamber, and then the process gas in the chamber is ionized to generate plasma, and the plasma is used to lithography specific locations on the wafer. Glue for etching. Among them, the carrier plate plays a role in supporting and fixing the wafer, and controlling the temperature of the wafer during the manufacturing process.

However, during the semiconductor manufacturing process, wafers sometimes overlap when being transferred to the carrier tray due to station deviation or other factors. This causes the carrier tray to heat the wafer unevenly, resulting in etching of the wafer. The rate is inconsistent, affecting the uniformity of the process.

The present invention aims to provide a wafer placement state detection method, a semiconductor process chamber for implementing the wafer placement state detection method and a semiconductor process equipment including the semiconductor process chamber. The wafer placement state detection method can Ensure the stability of the position of the wafer transferred to the carrier tray.

In order to achieve the above object, as an aspect of the present invention, a method for detecting a wafer placement state is provided, which is applied to a semiconductor process chamber. The semiconductor process chamber includes a cavity and a carrier tray disposed in the cavity. The carrier tray It is used to carry the wafer and keep the carrying tray at a set temperature value. The carrying tray is provided with a temperature detection component for detecting the temperature of the carrying tray close to the carrying surface. The wafer placement status detection method includes: Place the wafer on the bearing surface of the carrier tray, and obtain the minimum actual temperature detection value among all actual temperature detection values detected by the temperature detection component within the preset time; determine whether the minimum actual temperature detection value is lower than the preset value Temperature value, the preset temperature value is lower than the set temperature value; if it is, it is determined that the position of the wafer is normal; if not, it is determined that the position of the wafer is abnormal.

Optionally, the wafer placement status detection method also includes a method for determining the preset temperature value. The method includes: placing the wafer on the carrier tray and keeping the wafer in a normal position; obtaining the temperature detection Among all the first temperature detection values detected by the component, the minimum first temperature detection value during the period from when the wafer is placed on the carrier to when the temperature of the carrier returns to the set temperature value; to the carrier Place the wafer on the tray and place the wafer in an abnormal position; obtain all the second temperature detection values detected by the temperature detection component, from when the wafer is placed on the carrier tray to when the carrier tray The minimum second temperature detection value during the period when the temperature returns to the set temperature value; the preset temperature value is determined based on the minimum first temperature detection value and the minimum second temperature detection value, wherein the preset temperature value is between Between the minimum first temperature detection value and the minimum second temperature detection value.

Optionally, determining the preset temperature value according to the minimum first temperature detection value and the minimum second temperature detection value specifically includes: calculating the first temperature between the set temperature value and the minimum first temperature detection value. The difference, and the second temperature difference between the set temperature value and the minimum second temperature detection value; determine the preset temperature difference according to the first temperature difference and the second temperature difference, wherein, the The size of the preset temperature difference is between the first temperature difference and the second temperature difference; the difference between the set temperature value and the preset temperature difference is calculated as the preset temperature value.

Optionally, the preset time is greater than the time it takes for the temperature of the carrier plate to drop from the temperature before the wafer is placed on the carrier plate to the minimum first temperature detection value and the temperature of the carrier plate drops from the temperature of the wafer to the carrier plate. The time it takes for the temperature before the wafer is placed on the susceptor to drop to the minimum second temperature detection value is less than the time it takes for the temperature of the susceptor to return to the set temperature value from the temperature before the wafer is placed on the susceptor. time.

Optionally, the carrier plate is also provided with a heating element and at least one over-temperature detector. The heating element is used to heat the carrier plate. The over-temperature detector is used to detect the temperature of the carrier plate. The wafer The placement state detection method also includes: controlling the heating element to stop heating when the temperature detection value of the over-temperature detection component is higher than a preset safe temperature value.

As a second aspect of the present invention, a semiconductor processing chamber is provided, including a cavity and a carrier tray disposed in the cavity. The carrier tray is used to carry a wafer, and the temperature of the carrier tray and the wafer are connected to each other. Maintained at a set temperature value, wherein a temperature detection component is provided in the bearing plate for detecting the temperature of the bearing plate close to the bearing surface. The conductor processing chamber also includes a control device for realizing the above-mentioned crystal structure provided by the present invention. Circle placement status detection method.

Optionally, the temperature detection component is disposed at the center of the bearing plate.

Optionally, the temperature detection component includes a thermocouple, and the distance between one end of the thermocouple facing the bearing plate and the bearing surface is 7 mm to 8 mm.

Optionally, the bearing tray is also provided with a heating element and at least one over-temperature detection component, the heating element is used to heat the bearing tray, and the over-temperature detection component is used to detect the temperature of the bearing tray; the control device It is used to control the heating element to stop heating when the temperature detection value of the over-temperature detection component is higher than the preset safe temperature value.

Optionally, a plurality of the over-temperature detection components are provided in the carrier tray, and the plurality of over-temperature detection components are arranged at intervals along the circumferential direction of the carrier tray.

As a third aspect of the present invention, a semiconductor processing equipment is provided. The semiconductor processing equipment includes the above-mentioned semiconductor processing chamber provided by the present invention.

In the wafer placement status detection method, semiconductor process chamber and semiconductor process equipment provided by the present invention, after placing the wafer on the bearing surface of the bearing tray, all actual temperature values detected by the temperature detector within a preset time are obtained. The minimum actual temperature detection value in the temperature detection value can be used to determine whether the actual temperature detection value has dropped sufficiently from the set temperature value, that is, whether the minimum actual temperature detection value is lower than the preset temperature value, and at the minimum When the actual temperature detection value is lower than the preset temperature value, it is determined that the wafer position is normal. When the minimum actual temperature detection value is not lower than the preset temperature value, it is determined that the wafer position is abnormal (such as overlapping), thereby achieving Automatically identify whether the wafer position is normal, promptly stop the semiconductor process when the wafer position is abnormal, avoid the semiconductor process chamber from continuing the semiconductor process when the wafer position is abnormal, and ensure the uniformity of the semiconductor process on the wafer surface It improves the reliability and stability of the chip transfer process, reduces the risk of debris, and improves the safety of the semiconductor process.

The following disclosure provides many different embodiments or examples of different means for implementing the disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, the following description in which a first member is formed over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include embodiments in which additional members Embodiments may be formed between the first member and the second member such that the first member and the second member may not be in direct contact. Additionally, the present disclosure may repeat reference numbers and/or letters in various instances. This repetition is for simplicity and clarity and does not inherently indicate a relationship between the various embodiments and/or configurations discussed.

In addition, for ease of description, spatially relative terms such as “below,” “below,” “lower,” “above,” “upper,” and the like may be used herein to describe one element or component in relation to another(s). The relationship between components or components, as illustrated in the figure. Spatially relative terms are intended to cover different orientations of the device in use or operation other than the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the values stated in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Furthermore, as used herein, the term "about" generally means within 10%, 5%, 1% or 0.5% of a given value or range. Alternatively, the term "approximately" means within one acceptable standard error of the mean when considered by one of ordinary skill in the art. Except in operating/working examples, or unless otherwise expressly specified, all numerical ranges such as quantities, durations of time, temperatures, operating conditions, ratios of quantities, and the like for materials disclosed herein, Quantities, values and percentages should be understood to be modified in all instances by the term "approximately". Accordingly, unless indicated to the contrary, the numerical parameters set forth in the patent claims of this disclosure and accompanying invention claims are approximations that may vary as necessary. At a minimum, each numerical parameter should be interpreted in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges may be expressed herein as from one endpoint to the other endpoint or between two endpoints. All ranges disclosed herein include endpoints unless otherwise specified.

As shown in FIGS. 1 and 2 , the bearing surface a of the bearing tray 100 is usually surrounded by a limiting element structure surrounding the bearing surface a. As shown in Figure 1, under normal circumstances, the transmission element of the semiconductor processing equipment can accurately place the wafer 10 in a position aligned with the carrying surface a, so that the wafer 10 accurately falls into the area defined by the limiting element structure. Inside, one side surface of the wafer 10 is completely in contact with the carrying surface a to achieve effective heat exchange with the carrying plate 100 .

However, as shown in FIG. 2 , in some cases, the transmission elements of the semiconductor processing equipment may produce a certain positional deviation when transporting the wafer 10 , causing overlapping problems when the wafer 10 falls on the carrier tray 100 . That is, one edge of the wafer 10 rests on the limiting element structure, so that the side surface of the wafer 10 facing the carrying surface a cannot fully contact the carrying surface a. This not only affects the relationship between the wafer 10 and the carrying plate 100 The heat exchange efficiency reduces the controllability of the temperature of the wafer 10 , affects the uniformity of the semiconductor process performed on the surface of the wafer 10 , and may also cause the wafer 10 to further slide or even come out of the carrier tray 100 in the subsequent process, causing a debris accident.

In order to solve the above technical problems, as an aspect of the present invention, a method for detecting wafer placement status is provided, which is applied to a semiconductor process chamber. The semiconductor process chamber includes a cavity and a carrier tray 100 disposed in the cavity. The carrier tray 100 is used to carry the wafer and maintain the carrying tray 100 at the set temperature value TC1. As shown in FIGS. 3 and 4 , a temperature detection component 110 is provided in the bearing tray 100 for detecting the temperature of the bearing tray 100 close to the bearing surface a. The wafer placement status detection method is implemented by the control device of the semiconductor process chamber. As shown in Figure 7, the wafer placement status detection method includes:

Step S1: Place the wafer 10 on the bearing surface a of the carrier tray 100, and obtain the minimum actual temperature detection value among all actual temperature detection values detected by the temperature detection component 110 within the preset time t2 (i.e., the detected bearing surface Surface a has the lowest temperature);

Step S2: Determine whether the minimum actual temperature detection value is lower than the preset temperature value TC4, which is lower than the above-mentioned set temperature value TC1; if so, it is determined that the wafer position is normal, and the process can be continued at this time; if not , it is determined that the wafer position is abnormal, and the process needs to be stopped at this time.

The inventor of the present invention discovered during experimental research that because the wafer 10 was at room temperature before being introduced into the semiconductor process chamber, and there was a temperature difference between the carrier tray 100 maintained at the set temperature value TC1, therefore, the wafer 10 was placed on the carrier After being placed on the bearing surface a of the bearing plate 100, heat will be exchanged with the bearing plate 100, causing a certain fluctuation in the temperature of the bearing surface a of the bearing plate 100. The heat exchange efficiency between the wafer 10 and the carrier plate 100 is related to the contact area between the two. Therefore, when the wafer 10 normally falls on the carrier surface a (all wafers are placed on the carrier surface a), the carrier surface The fluctuation amplitude of the temperature on a must be greater than the fluctuation amplitude of the temperature on the carrying surface a when the wafer 10 is overlapped (the wafer is partially placed on the carrying surface a).

Specifically, the control device can control the heating power of the heating element in the bearing plate 100 through feedback adjustment (specifically, proportional integral derivative (PID) adjustment). That is, the control device can control the heating power of the heating element in the bearing plate 100 according to the temperature fed back by the temperature measuring element in the bearing plate 100 . value, the heating power of the heating element is adjusted immediately so that the temperature value fed back by the temperature measuring element is maintained at the set temperature value TC1, thereby maintaining the temperature of the carrier tray 100 and the wafers it carries at the set temperature value TC1.

Optionally, as shown in FIGS. 3 and 4 , a plurality of ejector pin holes 130 penetrating the carrier 100 along the thickness direction are also formed in the carrier tray 100 to cooperate with the ejector pin structure (for example, a three-pin structure) to realize the wafer operation. Lift. For example, three ejector pin holes 130 can be formed in the carrier tray 100. When the transfer assembly takes the film from the chamber, the three-pin structure below the carrier tray 100 rises upward, and the three ejector pins pass through the three ejector pin holes one by one. 130 and lift up the wafer on the carrier tray 100 so that the transfer component can lift the wafer from below and take the wafer away; when the transfer component transfers the wafer into the chamber, the three-pin structure is raised in advance, and the transfer component transfers the wafer to the chamber. The circle is placed on the three ejector pins, and then the three-pin structure is lowered, so that the three ejector pins are retracted to the bottom of the carrier tray 100 through the three ejector pin holes 130, and the wafer is placed on the carrier surface a (that is, corresponding to the moment in Figure 5 t0).

As shown in the curve L1 in Figure 5, at time 0, the control device controls the three-pin structure to start to descend, so that the wafer 10 normally falls on the bearing surface a at time t0. The surface on one side of the wafer 10 is in contact with the bearing surface of the bearing plate 100. Surface a contacts and quickly absorbs the heat on the bearing plate 100, causing the temperature on the bearing surface a of the bearing plate 100 to drop rapidly. Then the bearing plate 100 increases the heating power through proportional integral differential adjustment to restore the temperature of the bearing surface a to Set the temperature value TC1.

As shown in the curve L2 in Figure 5, at time 0, the control device controls the three-pin structure to begin to descend, so that when the wafer 10 falls on the carrier tray 100 at time t0 and an overlapping problem occurs, the surface on one side of the wafer 10 is only partially In contact with the bearing surface a of the bearing plate 100, the rate at which it absorbs heat on the bearing plate 100 is lower than that corresponding to the curve L1. Therefore, the lowest temperature that the bearing surface a can reach on the curve L2 is higher than that of the bearing surface a on the curve L1. the lowest temperature. That is, the temperature adjustment capability of the bearing tray 100 remains unchanged. When the wafer normally falls on the bearing surface a, the temperature fluctuation amplitude of the bearing surface a is larger. When the wafer is placed on the edge, the temperature fluctuation amplitude of the bearing surface a is smaller. Therefore, This feature can be used to identify whether the wafer position is normal.

In the wafer placement state detection method provided by the present invention, after placing the wafer carrying surface a on the carrying tray 100, the minimum of all actual temperature detection values detected by the temperature detection component 110 within a preset time is obtained. The actual temperature detection value can be used to determine whether the actual temperature detection value has dropped sufficiently from the set temperature value TC1, that is, to determine whether the minimum actual temperature detection value is lower than the preset temperature value TC4, and when the minimum actual temperature detection value is When the temperature is lower than the preset temperature value TC4, it is determined that the wafer position is normal. When the minimum actual temperature detection value is not lower than the preset temperature value TC4 (that is, the temperature drop of the bearing surface a is too small), the wafer position is found to be abnormal. (for example, overlap occurs), thereby realizing automatic identification of whether the wafer position is normal, and promptly stopping the semiconductor process when the wafer position is abnormal, avoiding the semiconductor process chamber from continuing the semiconductor process when the wafer position is offset, ensuring The uniformity of the semiconductor process and the stability of the wafer transfer process on the wafer surface reduce the risk of debris and improve the safety of the semiconductor process.

It should be noted that the size of the preset temperature value TC4 needs to be determined based on the fluctuation range of the temperature on the carrying surface a after the wafer normally falls on the carrying surface a. That is, the size of the preset temperature value TC4 is related to the set temperature value TC1, the model of the carrier tray 100, the material and size of the wafer, and other factors. Taking into account the variability of the above factors, in order to improve the sensitivity of the method provided by the present invention to different semiconductors The adaptability of the process chamber. As a preferred embodiment of the present invention, the wafer placement status detection method also includes a method of determining the preset temperature value TC4. The method includes:

Step S11: Place the wafer 10 on the carrier tray 100, and keep the wafer 10 in a normal position, that is, place all the wafers 10 on the carrier surface a, and obtain all the first temperature signals detected by the temperature detector 110. Among the temperature detection values, the minimum first temperature detection value TC2 during the period from when the wafer 10 is placed on the susceptor 100 to when the temperature of the susceptor 100 returns to the set temperature value TC1;

Step S12: Place the wafer 10 on the carrier tray 100, and place the wafer 10 in an abnormal position, that is, the wafer 10 is partially placed on the carrier surface a (ie, overlapping), and obtain the temperature detection component 110 Among all the second temperature detection values detected, the minimum second temperature detection value TC3 during the period from when the wafer 10 is placed on the susceptor tray 100 to when the temperature of the susceptor tray 100 returns to the set temperature value TC1;

Step S13: Determine the preset temperature value TC4 according to the minimum first temperature detection value TC2 and the minimum second temperature detection value TC3, where the preset temperature value TC4 is between the minimum first temperature detection value TC2 and the minimum second temperature detection value between TC3.

In the embodiment of the present invention, the control device first obtains the minimum first temperature detection value TC2 of the carrier tray 100 when the wafer normally falls on the carrier tray 100 in step S11, and then obtains the minimum first temperature detection value TC2 of the carrier tray 100 when the wafer overlaps in step S12. Based on the minimum second temperature detection value TC3 of the carrier 100, a preset temperature value TC4 between the minimum first temperature detection value TC2 and the minimum second temperature detection value TC3 can be determined, and based on this, the wafer The basis for judging whether the film is transferred normally. That is, after placing the wafer on the carrier tray 100 and the temperature of the carrier tray 100 drops below the preset temperature value TC4 (that is, the minimum first temperature detection value TC2 is lower than the preset temperature value TC4), it can be determined that the transmission The wafer is normal; the temperature of the carrier tray 100 does not drop below the preset temperature value TC4 (that is, the minimum second temperature detection value TC3 is higher than or equal to the preset temperature value TC4), then it can be determined that the temperature between the wafer and the carrier surface a is The contact area is too small and the wafer overlaps.

As an optional implementation of the present invention, determining the preset temperature value TC4 based on the minimum first temperature detection value TC2 and the minimum second temperature detection value TC3 specifically includes:

Step S131: Calculate the first temperature difference ΔTC1 between the set temperature value TC1 and the minimum first temperature detection value TC2, and the second temperature difference ΔTC2 between the set temperature value TC1 and the minimum second temperature detection value TC3;

Step S132: Determine a preset temperature difference ΔTC based on the first temperature difference ΔTC1 and the second temperature difference ΔTC2, where the preset temperature difference ΔTC is between the first temperature difference ΔTC1 and the second temperature difference Between ΔTC2;

Step S133: Calculate the difference between the set temperature value TC1 and the preset temperature difference ΔTC as the preset temperature value TC4.

It has been experimentally verified by the inventor of the present invention that in the existing dry glue removal machine, after the wafer normally falls on the bearing surface a, the maximum fluctuation range of the temperature detection value of the temperature detection part 110 set in the bearing tray 100 (i.e. ΔTC1) It is about 3°C; when the wafer is edged, the maximum fluctuation range of the temperature detection value of the temperature detection component 110 (ie, ΔTC2) is about 0.5°C. That is, the preset temperature difference ΔTC can be set to a value between 0.5°C and 3°C.

As an optional implementation of the present invention, the preset temperature difference ΔTC can be 2°C, that is, the preset temperature value TC4 is 2°C lower than the set temperature value TC1 , for example, the wafer 10 is placed on the carrier tray 100 After loading, if the temperature of the carrier tray 100 drops by more than 2°C, it can be considered that the bottom surface of the wafer 10 is in complete contact with the carrier surface a of the carrier tray 100 and the position of the wafer 10 is normal.

The embodiment of the present invention does not specifically limit the length of the preset time t2, as long as it can ensure that the peak value of the temperature detection value fluctuation of the temperature detection component 110 falls within the preset time t2. For example, as an optional implementation of the present invention, the length of time that elapses when the temperature detection value of the temperature detection component 110 reaches the lowest point after the wafer is placed can be recorded, and the preset time t2 can be determined with reference to this length of time. Specifically, the time corresponding to the lowest point of curve L1 and curve L2 is usually not very different (i.e., the t1 moment in Figure 5). When selecting the preset time t2, make the preset time t2 greater than the lowest point of all previously collected temperature curves. The corresponding t1 is enough. In addition, since it usually takes a certain amount of time to restore the bearing plate 100 to the set temperature value TC1 through feedback adjustment, in order to improve detection efficiency, the preset time t2 is preferably shorter than the time for the bearing surface a to return to the set temperature value TC1.

That is, the preset time t2 is greater than the time it takes for the temperature of the susceptor 100 to drop from the temperature before the wafer is placed on the susceptor 100 to the minimum first temperature detection value TC2 and the time it takes for the temperature of the susceptor 100 to decrease from the temperature before the wafer is placed on the susceptor 100 to the minimum first temperature detection value TC2. The time it takes to drop to the minimum second temperature detection value TC3 before 100 (that is, greater than the t1 moment of each collected curve), and less than the temperature of the susceptor 100 returning to the set temperature from the temperature before the wafer is placed on the susceptor 100 Value TC1 takes the time.

In order to improve the safety of the semiconductor manufacturing process, as a preferred embodiment of the present invention, as shown in FIG. 3 , the carrier tray 100 is also provided with a heating element and at least one over-temperature detector 120 , and the heating element is used to perform testing on the carrier tray 100 . The heating and over-temperature detection component 120 is used to detect the temperature of the carrier tray 100. The wafer placement status detection method also includes:

When the temperature detection value of the over-temperature detection component 120 is higher than the preset safe temperature value, the heating element is controlled to stop heating.

In the embodiment of the present invention, the control device performs real-time monitoring of the temperature detection value of the over-temperature detection component 120. When the temperature detection value of the over-temperature detection component 120 is higher than the preset safe temperature value, it is determined that the temperature of the carrier tray 100 is too high. High, the heating element is actively controlled to stop heating, so as to avoid problems such as cracking and bulging of the bearing surface a due to excessive temperature of the bearing plate 100, and to protect the bearing plate 100 and its internal corresponding structures.

As an optional implementation of the present invention, the preset safe temperature value can be set between the normal operating temperature of the bearing tray 100 and the upper limit of temperature resistance. For example, if the upper limit of the heating temperature of the carrier plate 100 is about 350°C, and its working environment is 200°C-275°C, then the preset safe temperature value can be set between 275°C and 350°C. For example, the preset safe temperature value may be 320°C.

As a preferred embodiment of the present invention, the temperature detector 110 is multiplexed as a temperature measurement element for feedback adjustment (PID adjustment) of the heating element heating power of the control device, that is, the control device is used to instantly obtain the temperature detection value of the temperature detector 110, And based on the difference between the temperature detection value and the set temperature value TC1, the heating power of the heating element is feedback adjusted (PID adjustment), so that the temperature detection value of the temperature detection part 110 is maintained at the set temperature value TC1, and then the carrier plate 100 and The temperature of the wafer 10 carried thereon is maintained at the set temperature value TC1.

In order to facilitate the understanding of technicians, the following provides a detailed process for the control device to confirm the preset temperature value TC4 when the set temperature value TC1 is 275°C:

After the control device receives the set temperature value TC1 of 275°C, it immediately adjusts the heating power in the bearing tray 100 according to the temperature detection value of the temperature detection component 110 to maintain the temperature detection value of the temperature detection component 110 at 275°C.

Before processing the wafer, the control device first performs process testing. First, the transmission component is controlled to transfer the wafer to the three-pin structure of the carrier tray 100, and then the three-pin structure is controlled to descend so that all the wafers are placed on the carrier surface a of the carrier tray 100 (that is, the wafer is transferred to the carrier tray 100 normally. circle), and obtain the temperature detection value of the temperature detection component 110 in real time, and obtain the temperature curve L1 of the bearing plate 100 corresponding to normal conditions. From the analysis of the curve L1, it can be seen that the first temperature difference ΔTC1 between the minimum first temperature detection value TC2 and the set temperature value TC1 when the temperature of the bearing plate 100 fluctuates is about 3°C, which decreases from the three-pin structure to the temperature detection component 110 The time t1 elapsed when the temperature detection value drops to the lowest point (TC2) is about 13s;

Then, (after removing the previous wafer 10 ), the transmission component is controlled to transfer the wafer to the carrier tray 100 , and then the three-pin structure is controlled to descend, so that the wafer is partially placed on the carrier surface a of the carrier tray 100 (i.e., the wafer is Overlapping), the temperature detection value of the temperature detection component 110 is also obtained in real time, and the temperature curve L2 of the carrier plate 100 corresponding to the overlapping condition is obtained. From the analysis of the curve L2, it can be seen that the second temperature difference ΔTC2 between the minimum second temperature detection value TC3 and the set temperature value TC1 when the temperature of the bearing plate 100 fluctuates is about 0.5°C (the time t1 corresponding to the lowest point is also about 13 seconds). ).

Finally, the control device can determine the value range of the preset temperature value TC4 and the preset time t2 based on the results of the two process tests, specifically:

First, it can be seen from the values of the first temperature difference ΔTC1 and the second temperature difference ΔTC2 that the value range of the temperature difference ΔTC is ΔTC2<ΔTC<ΔTC1, that is, 0.5°C<ΔTC<3°C. The value of ΔTC is 2°C. Then the preset temperature value TC4=TC1-ΔTC=273℃ can be obtained.

From the value of t1, it can be seen that the value range of the preset time t2 is t2>t1, that is, t2>13s. Set the value of the preset time t2 so that the preset time t2=20s.

The control device can then write the temperature difference value ΔTC (preset temperature value TC4) into the process recipe corresponding to the current wafer, and write the preset time t2 into the software configuration item (setup).

Later in the semiconductor manufacturing process, the control device can make a judgment based on the set value when transferring the chip. If the temperature detection value of the temperature detection component 110 does not drop below 273°C within 20 seconds after the three-pin structure is lowered, it will be judged that the crystal is Circle overlapping (i.e. abnormal wafer position).

In order to improve the safety of the semiconductor process and the troubleshooting efficiency of the semiconductor process production line, as a preferred embodiment of the present invention, the method also includes throwing an alarm (for example, controlling a buzzer) after determining that the wafer position is abnormal (overlap). The device rings, the indicator light flashes, and the corresponding alarm window pops up on the interface, etc.).

As a second aspect of the present invention, a semiconductor processing chamber is provided, including a cavity and a carrying tray 100 disposed in the cavity. The carrying tray 100 is used to carry a wafer and maintain the temperature of the carrying tray 100 and the wafer. At the set temperature value TC1. A temperature detection component 110 is provided in the carrier tray 100 for detecting the temperature of the carrier tray 100 close to the carrier surface a. The conductor process chamber also includes a control device for implementing the wafer placement status detection method provided by the embodiment of the present invention. .

In the semiconductor process chamber provided by the present invention, after placing the wafer on the carrying surface a of the carrying tray 100, the minimum actual temperature detection among all actual temperature detection values detected by the temperature detection component within a preset time is obtained. value, it can be judged whether the actual temperature detection value has dropped sufficiently from the set temperature value, that is, whether the minimum actual temperature detection value is lower than the preset temperature value, and when the minimum actual temperature detection value is lower than the preset temperature When the minimum actual temperature detection value is not lower than the preset temperature value, it is determined that the wafer position is abnormal (such as overlapping), so as to automatically identify whether the wafer position is normal and timely Stopping the semiconductor process when the wafer position is abnormal prevents the semiconductor process chamber from continuing the semiconductor process when the wafer position is abnormal, ensuring the uniformity of the semiconductor process on the wafer surface and the stability of the wafer transfer process. It also reduces the risk of debris and improves the safety of the semiconductor manufacturing process.

As an optional embodiment of the present invention, a heating element is also provided in the carrier tray 100 for heating the carrier tray 100 . Optionally, as shown in FIG. 3 , the heating element includes a heating wire 150 embedded inside the bearing tray 100 . The heating wire 150 can generate heat based on the principle of electric heating after being connected to the power supply, thereby heating the bearing tray 100 and the materials carried thereon. wafer is heated. Optionally, the semiconductor processing chamber provided by the present invention can be used in a dry glue removal process.

In order to ensure the control device's recognition accuracy of wafer overlapping, as a preferred embodiment of the present invention, as shown in Figure 3, the temperature detection component 110 is disposed at the center of the carrier tray 100. For example, the temperature detector 110 is on the carrier tray. The projection on the bearing surface a of the bearing plate 100 coincides with the axis of the bearing plate 100 .

When the wafer position is shifted and overlap problems occur, the contact position between the edge of the wafer and the bearing surface a is random, and the contact position between one edge of the wafer and the bearing surface a changes with the shift of the wafer position. Therefore, in the embodiment of the present invention, the temperature detection component 110 is disposed in the center of the carrier tray 100, so that no matter which side of the wafer is in contact with the carrier surface a when the wafer is overlapped, the detection results of the temperature detection component 110 will not be affected. The difference from the normal situation ensures the accuracy of identifying the wafer overlap problem.

As an optional implementation of the present invention, the temperature detection component 110 may include a thermocouple. In order to ensure the temperature detection effect of the temperature detection component 110 on the bearing tray 100 and avoid affecting the flatness of the bearing surface a and the uniformity of the wafer temperature, as a preferred embodiment of the present invention, as shown in Figure 3, the thermocouple faces The distance d between one end of the bearing tray 100 and the bearing surface a is 7 mm to 8 mm. Optionally, the distance d between the end of the thermocouple facing the bearing plate 100 and the bearing surface a is 7.5 mm.

In order to ensure the stability of the thermocouple fixed in the bearing plate 100, the thermocouple is preferably a K-type armored thermocouple, and the thread on the outer surface of the thermocouple is screwed into the threaded hole in the center of the bottom of the bearing plate 100 to achieve Fastening connection with the carrying plate 100.

Optionally, the outer diameter of the thermocouple of the temperature detection component 110 is about 3 mm, the response speed is 1.2 s, and the temperature measurement accuracy is level I.

In order to improve the safety of the semiconductor manufacturing process, as a preferred embodiment of the present invention, as shown in FIG. 3 , at least one over-temperature detector 120 is also provided in the carrier tray 100 . The over-temperature detector 120 is used to detect the temperature of the carrier tray 100 . temperature. The control device is used to control the heating element to stop heating when the temperature detection value of the over-temperature detection component 120 is higher than a preset safe temperature value.

In the embodiment of the present invention, the control device performs real-time monitoring of the temperature detection value of the over-temperature detection component 120. When the temperature detection value of the over-temperature detection component 120 is higher than the preset safe temperature value, it is determined that the temperature of the carrier tray 100 is too high. High, the heating element is actively controlled to stop heating, so as to avoid problems such as cracking and bulging of the bearing surface a due to excessive temperature of the bearing plate 100, and to protect the bearing plate 100 and its internal corresponding structures.

As a preferred embodiment of the present invention, the over-temperature detection component 120 includes a thermocouple, which is embedded and installed near the heating wire 150 and located between the center and the edge of the bearing plate 100 . During the semiconductor manufacturing process, the heat generated by the heating wire 150 is conducted outward through the carrier tray 100 to maintain the temperature of the entire carrier tray 100 and the wafer 10 carried thereon at the set temperature value TC1. There is a gradient distribution of the temperature inside the carrier tray, that is, The temperature gradually decreases in the direction away from the heating wire 150. Therefore, in order to ensure that the control device promptly detects the abnormal situation that the temperature of the bearing plate 100 is too high, the over-temperature detection component 120 is preferably placed as close as possible to the heating wire 150, so that the over-temperature detection component 120 can Real-time detection of the temperature near the heating wire 150 allows the control device to detect abnormalities more quickly when the temperature of the heating wire 150 exceeds the preset safe temperature value, thereby better preventing the bearing plate 100 from being broken due to excessive temperature and causing the bearing surface to break. a. Problems such as bulges and the like protect the bearing tray 100 and its internal corresponding structures.

Preferably, the position of the over-temperature detection component 120 along the thickness direction of the bearing tray 100 corresponds to the heating wire 150 (that is, the over-temperature detection component 120 and the heating wire 150 are located on the same horizontal plane), so as to improve the control device's ability to pass through when the temperature of the bearing tray 100 is too high. The efficiency of the over-temperature detection component 120 in identifying abnormal problems.

Optionally, the tops of the heating wire 150 and the over-temperature detection component 120 are approximately 17.5 mm away from the bearing surface a of the bearing tray 100 . Optionally, the outer diameter of the thermocouple in the over-temperature detection component 120 is approximately 3 mm.

In order to further improve the safety of the semiconductor manufacturing process, as a preferred embodiment of the present invention, multiple over-temperature detection components 120 are provided in the carrier tray 100. The multiple over-temperature detection components 120 are spaced apart along the circumferential direction of the carrier tray 100, so that The temperature of the bearing tray 100 in all directions can be detected instantly to improve alarm sensitivity.

As a preferred embodiment of the present invention, as shown in Figure 4, an air guide groove 140 is also formed on the bearing surface a of the bearing tray 100 to guide the gas between the wafer and the bearing surface a to be discharged evenly in the circumferential direction. to ensure the stability of the wafer position.

Optionally, as shown in FIG. 4 , the air guide groove 140 includes a plurality of radiating grooves 141 , each radiating groove 141 extends radially from the center of the bearing surface a, and the plurality of radiating grooves 141 are distributed circumferentially for guiding. The gas is discharged radially.

Preferably, as shown in FIG. 4 , the air guide groove 140 also includes at least one annular groove 142 , which extends circumferentially around the axis of the carrier plate 100 and intersects a plurality of (all) radiation grooves 141 for improving The pressure uniformity of the gas along the circumferential direction can prevent the horizontal position of the wafer from shifting due to the uneven size of the circumferential airflow when the gas between the wafer and the bearing surface a is discharged when the wafer falls, thereby further improving the stability of the wafer position. sex.

As an optional embodiment of the present invention, as shown in Figure 3, the temperature detection component 110, the over-temperature detection component 120 and the heating element are all connected to the circuit outside the chamber through a high-temperature resistant flexible wire 170. The surface layer of the high-temperature resistant flexible wire 170 has Mask layer.

In order to extend the service life of the high-temperature resistant cord 170, as an optional implementation mode of the present invention, as shown in Figure 3, an insulating sleeve 160 is fixedly provided at the bottom of the carrier tray 100, and the bottom end of the insulating sleeve 160 is in contact with the semiconductor process chamber. The bottom wall of the chamber is fixedly connected, and the inside of the insulating sleeve 160 is connected to the outside of the cavity through the through hole on the bottom wall of the cavity. The high-temperature resistant flexible wire 170 passes through the insulating sleeve 160 and the circuit outside the cavity (such as, power supply, control device, etc.) connection.

As an optional implementation mode of the present invention, as shown in Figure 6, the control device (outside the dotted line frame is the control device structure, and within the dotted line frame is the structure provided in the bearing tray 100) includes a thermostat and a solid-state relay. After receiving the temperature detection value of the temperature detection component 110 in the carrier tray 100, and based on the difference between the temperature detection value and the set temperature value TC1, the solid state relay is used to instantly adjust the power finally output to the heating element, thereby achieving Feedback adjustment (PID adjustment) is performed on the temperature of the carrier tray 100 to maintain the temperature of the carrier tray 100 and the wafers carried thereon at the set temperature value TC1.

When the over-temperature detection component 120 is also provided in the carrier tray 100, as an optional implementation mode of the present invention, as shown in Figure 6, the control device also includes a temperature control module and a temperature control module connected before the solid-state relay and the power supply. The AC contactor and the temperature control module are used to cut off the AC contactor when the temperature detection value of the over-temperature detection component 120 exceeds the preset safe temperature value (for example, 320°C) according to the judgment logic of the temperature control module. The power supply cannot be loaded onto the heating element, thereby protecting the structure in the carrier tray 100 .

As a third aspect of the present invention, a semiconductor processing equipment is provided. The semiconductor processing equipment includes the semiconductor processing chamber provided by the embodiment of the present invention. Optionally, the semiconductor processing equipment further includes a transport element for transporting the wafer to the carrier tray 100 in the semiconductor process chamber (specifically, transporting the wafer to the raised three-pin structure of the carrier tray 100).

In the semiconductor processing equipment provided by the present invention, the control device of the semiconductor processing chamber can obtain all the actual temperature detections detected by the temperature detection component 110 within a preset time after placing the wafer on the carrying surface of the carrying tray 100. The minimum actual temperature detection value in the value can be used to judge whether the actual temperature detection value has dropped sufficiently from the set temperature value TC1, that is, it can be judged whether the minimum actual temperature detection value is lower than the preset temperature value TC4, and at the minimum When the actual temperature detection value is lower than the preset temperature value TC4, it is determined that the wafer position is normal. When the minimum actual temperature detection value is not lower than the preset temperature value TC4 (that is, the temperature drop of the bearing surface a is too small), it is determined When an abnormal wafer position is discovered, the semiconductor process is promptly stopped when the wafer position is abnormal. This prevents the semiconductor process chamber from continuing the semiconductor process when the wafer position is abnormal, ensuring the uniformity and uniformity of the semiconductor process on the wafer surface. The stability of the chip transfer process reduces the risk of debris and improves the safety of the semiconductor manufacturing process.

The foregoing content summarizes the features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also understand that such equivalent constructions do not depart from the spirit and scope of the disclosure, and that they can be variously changed, replaced, and altered herein without departing from the spirit and scope of the disclosure.

100: Carrying tray 110: Temperature detection piece 120: Over-temperature detection piece 130:Thimble hole 140: Air guide groove 141:Radiation trough 142: Annular groove 150: Heating wire 160:Insulating sleeve 170:High temperature resistant soft wire S1, S2: steps

The present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or reduced for clarity of discussion. FIG. 1 is a schematic diagram of a situation in which a wafer falls on a carrier tray in a semiconductor processing chamber provided by an embodiment of the present invention; 2 is a schematic diagram of another situation in which a wafer falls on a carrier tray in a semiconductor processing chamber provided by an embodiment of the present invention; Figure 3 is a schematic structural diagram of a carrier tray in a semiconductor processing chamber provided by an embodiment of the present invention; Figure 4 is a top view of the area a of the bearing surface of the bearing plate in Figure 3; Figure 5 is a schematic diagram of changes in the temperature detection value of the temperature detection component in the bearing tray under the conditions shown in Figures 1 and 2; Figure 6 is a schematic structural diagram of a control device in a semiconductor processing chamber provided by an embodiment of the present invention; FIG. 7 is a flow chart of a method for detecting a wafer placement state provided by an embodiment of the present invention.

S1, S2: steps

Claims (11)

A method for detecting wafer placement status, applied to a semiconductor process chamber. The semiconductor process chamber includes a cavity and a carrier tray disposed in the cavity. The carrier tray is used to carry the wafer, and the carrier tray is used to carry the wafer. The disk is maintained at a set temperature value, wherein a temperature detector is provided in the carrier disk for detecting the temperature of the carrier disk close to the carrier surface. The wafer placement status detection method includes: Place a wafer on the bearing surface of the carrier tray, and obtain a minimum actual temperature detection value among all actual temperature detection values detected by the temperature detection component within a preset time; Determine whether the minimum actual temperature detection value is lower than a preset temperature value, and the preset temperature value is lower than the set temperature value; if so, it is determined that the position of the wafer is normal; if not, it is determined that the position of the wafer is abnormal. The wafer placement status detection method as described in claim 1, wherein the wafer placement status detection method also includes a method for determining the preset temperature value, the method includes: Place the wafer on the carrier tray and keep the wafer in a normal position; Obtain the minimum first temperature detection value among all the first temperature detection values detected by the temperature detection component during the period from when the wafer is placed on the carrier tray to when the temperature of the carrier tray returns to the set temperature value. ; Place a wafer on the carrier tray and place the wafer in an abnormal position; Obtain the minimum second temperature detection value among all the second temperature detection values detected by the temperature detection component during the period from when the wafer is placed on the carrier tray to when the temperature of the carrier tray returns to the set temperature value. ; The preset temperature value is determined according to the minimum first temperature detection value and the minimum second temperature detection value, wherein the preset temperature value is between the minimum first temperature detection value and the minimum second temperature detection value . The wafer placement state detection method as described in claim 2, wherein determining the preset temperature value based on the minimum first temperature detection value and the minimum second temperature detection value specifically includes: Calculate a first temperature difference between the set temperature value and the minimum first temperature detection value, and a second temperature difference between the set temperature value and the minimum second temperature detection value; Determine a preset temperature difference based on the first temperature difference and the second temperature difference, wherein the preset temperature difference is between the first temperature difference and the second temperature difference; The difference between the set temperature value and the preset temperature difference is calculated as the preset temperature value. The wafer placement state detection method as described in claim 2 or 3, wherein the preset time is greater than the time required for the temperature of the carrier to drop from the temperature before the wafer is placed on the carrier to the minimum first temperature detection value. The time it takes and the time it takes for the temperature of the carrier to drop from the temperature before the wafer is placed on the carrier to the minimum second temperature detection value, and is less than the temperature of the carrier from when the wafer is placed on the carrier The time it takes for the previous temperature of the disk to return to the set temperature value. The wafer placement state detection method according to any one of claims 1 to 3, wherein the carrier tray is further provided with a heating element and at least one over-temperature detector, and the heating element is used to heat the carrier tray. , the over-temperature detection component is used to detect the temperature of the carrier plate, and the wafer placement status detection method also includes: When the temperature detection value of the over-temperature detection component is higher than the preset safe temperature value, the heating element is controlled to stop heating. A semiconductor processing chamber includes a cavity and a carrier tray disposed in the cavity. The carrier tray is used to carry a wafer and maintain the temperatures of the carrier tray and the wafer at a set temperature value. Wherein, the bearing plate is provided with a temperature detection component for detecting the temperature of the bearing plate close to the bearing surface. The conductor processing chamber also includes a control device for realizing any one of claims 1 to 5. Wafer placement status detection method. The semiconductor processing chamber according to claim 6, wherein the temperature detection member is disposed at the center of the carrier plate. The semiconductor processing chamber of claim 7, wherein the temperature detection component includes a thermocouple, and the distance between an end of the thermocouple facing the bearing plate and the bearing surface is 7 mm to 8 mm. The semiconductor process chamber according to any one of claims 6 to 8, wherein the carrier tray is further provided with a heating element and at least one over-temperature detector, the heating element is used to heat the carrier tray, the The over-temperature detection component is used to detect the temperature of the bearing plate; the control device is used to control the heating element to stop heating when the temperature detection value of the over-temperature detection component is higher than a preset safe temperature value. The semiconductor process chamber according to claim 9, wherein a plurality of the over-temperature detection components are provided in the carrier tray, and the plurality of over-temperature detection components are arranged at intervals along the circumferential direction of the carrier tray. A semiconductor processing equipment, wherein the semiconductor processing equipment includes the semiconductor processing chamber described in any one of claims 6 to 10.