CN214753669U - Bearing device and reaction chamber of semiconductor process equipment - Google Patents
Bearing device and reaction chamber of semiconductor process equipment Download PDFInfo
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- CN214753669U CN214753669U CN202120917750.0U CN202120917750U CN214753669U CN 214753669 U CN214753669 U CN 214753669U CN 202120917750 U CN202120917750 U CN 202120917750U CN 214753669 U CN214753669 U CN 214753669U
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Abstract
The application discloses bear device and semiconductor process equipment's reaction chamber relates to the semiconductor and equips the field. A bearing device is applied to a reaction chamber of semiconductor process equipment and used for bearing a wafer, and comprises a heating layer, a dielectric layer, a temperature control layer and a temperature measuring device, wherein the heating layer, the dielectric layer and the temperature control layer are sequentially stacked, the temperature measuring device is arranged in the heating layer, and a wafer bearing surface is arranged on one side of the heating layer, which is far away from the dielectric layer; the heating layer is used for heating the wafer loaded on the wafer loading surface; the dielectric layer is used for separating the heating layer from the temperature control layer so as to reduce the speed of transferring the heat of the heating layer to the temperature control layer when the wafer is heated; the temperature control layer is used for increasing the speed of transferring the heat of the heating layer to the temperature control layer when the wafer is cooled; and the temperature measuring device is used for detecting the temperature on the wafer bearing surface. The reaction chamber of the semiconductor processing equipment comprises the bearing device. The method and the device can solve the problems of wafer position deviation, low temperature control precision and long process time.
Description
Technical Field
The application belongs to the technical field of semiconductor equipment, and particularly relates to a bearing device and a reaction chamber of semiconductor process equipment.
Background
The dry photoresist removal is to remove the photoresist by using plasma, and compared with the wet photoresist removal, the dry photoresist removal has better effect and higher speed. In the modern integrated circuit manufacturing process, the High dose particle implantation followed by photoresist stripping (HDIS) is mainly divided into two steps, first the Crust (Crust) of the surface layer is removed, and then the undenatured photoresist (bulk strip) under the Crust is removed. The temperatures required for the two steps are quite different, specifically, relatively low temperatures are required for removing the crust, e.g., <200 ℃, too high a temperature causes volatilization of the undenatured colloidal solvent to cause crust bursting (popping), while relatively high temperatures are required for removing the undenatured gel under the crust, e.g., greater than 200 ℃, and a rapid rate of temperature change is required. Therefore, control of the wafer surface temperature is critical.
In the related art, the wafer is driven by the lifting mechanism to move up and down so as to change the distance between the wafer and the heating element, thereby controlling the temperature. However, during the lifting process, the problems of wafer position deviation, low temperature control precision, prolonged process time and the like are easy to occur.
SUMMERY OF THE UTILITY MODEL
An object of the embodiments of the present application is to provide a carrying device and a carrying chamber of a semiconductor processing apparatus, which can solve at least one of the problems of wafer position deviation, low temperature control precision and prolonged process time.
In order to solve the technical problem, the present application is implemented as follows:
the embodiment of the application provides a bearing device, which is applied to a reaction chamber of semiconductor process equipment and used for bearing a wafer, and the bearing device comprises: the temperature measuring device comprises a heating layer, a dielectric layer, a temperature control layer and a temperature measuring device, wherein the heating layer, the dielectric layer and the temperature control layer are sequentially stacked, and the temperature measuring device is arranged in the heating layer;
the heating layer is used for heating the wafer loaded on the wafer loading surface;
the dielectric layer is used for separating the heating layer from the temperature control layer so as to reduce the speed of transferring the heat of the heating layer to the temperature control layer when the temperature of the wafer is raised;
the temperature control layer is used for increasing the speed of transferring the heat of the heating layer to the temperature control layer when the wafer is cooled;
and the temperature measuring device is used for detecting the temperature of the wafer bearing surface.
The embodiment of the application also provides a reaction chamber, and the reaction chamber comprises the bearing device.
In this application embodiment, the bearing device is including the zone of heating, dielectric layer and the accuse temperature layer of range upon range of setting in proper order, separates zone of heating and accuse temperature layer through the dielectric layer to, when the zone of heating is to bearing the wafer on the wafer loading face heating, the wafer loading face can directly heat the wafer, and meanwhile, the dielectric layer can separate the zone of heating. In the temperature rising process, the dielectric layer deviates from the wafer bearing surface, so that in the initial heating stage, the dielectric layer can play a certain role in blocking heat generated by the heating layer, the speed of transferring the heat of the heating layer to the temperature control layer is reduced, more heat is rapidly transferred to the wafer bearing surface, further, the wafer on the wafer bearing surface is rapidly heated, and rapid temperature rising is realized. In the cooling process, the temperature control layer can improve the speed of heat transfer to the temperature control layer of the zone of heating to can make heat transfer to the temperature control layer on a large amount of zones of heating, and then make the temperature of zone of heating reduce fast, in order to realize rapid cooling. And in the process of temperature rise or temperature reduction, the temperature of the wafer bearing surface is detected in real time through the temperature measuring device, so that the accurate control of the wafer heating temperature is realized.
Compare in adopting elevating system drive wafer to go up and down and change the mode that the temperature of wafer was adjusted to distance between wafer and the heating element, the temperature control effect in this application embodiment is more accurate, and the wafer can not make elevating movement along with elevating system among the heating process to the phenomenon of wafer skew can not appear, the position precision of wafer has been guaranteed, meanwhile, this application embodiment can realize rapid heating up and rapid cooling, and need not to wait for, has reduced the process time, has promoted process efficiency.
Drawings
FIG. 1 is a schematic view of a reaction chamber disclosed in an embodiment of the present application;
FIG. 2 is a schematic view of a carrier apparatus according to an embodiment of the disclosure;
fig. 3 is a front view of a heating layer in an embodiment of the present application.
Description of reference numerals:
100-a heating layer; 110-a heating section; 111-heating wires; 120-a stationary part; 121-fixing holes; 130-flange portion; 131-a channel;
200-a dielectric layer;
300-temperature control layer;
400-a temperature measuring device;
500-a support; 510-a support portion; 511-bump; 520-a mounting portion; 521-a cavity; 530-a first plate; 540-a second plate; 550-grooves;
600-a fastener;
710-a first seal; 720-a second seal;
800-a reaction chamber; 810-embedded groove;
900-fixed disk.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that embodiments of the application may be practiced in sequences other than those illustrated or described herein, and that the terms "first," "second," and the like are generally used herein in a generic sense and do not limit the number of terms, e.g., the first term can be one or more than one. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.
The embodiments of the present application are described in detail below with reference to the accompanying drawings through specific embodiments and application scenarios thereof.
Referring to fig. 1 and 2, in an embodiment of the present application, a carrier apparatus is disclosed, which is used in a reaction chamber 800 of a semiconductor processing apparatus and is used for carrying a wafer, and the disclosed carrier apparatus includes a heating layer 100, a dielectric layer 200, a temperature control layer 300, and a temperature measuring apparatus 400.
Referring to fig. 3, a heating layer 100 is a heating component of the carrier for heating the wafer carried thereon to meet the semiconductor process requirements. The dielectric layer 200 is a heat exchange or separation component of the carrying device, and the heating layer 100 and the temperature control layer 300 can be separated by the dielectric layer 200 to meet the requirements of the wafer heating process or the wafer cooling process. The temperature control layer 300 is an adjusting component of the bearing device, and the temperature control layer 300 can cool the heating layer 100, so that the temperature of the heating layer 100 can be adjusted.
Referring to fig. 2, in the embodiment of the present application, a heating layer 100, a dielectric layer 200 and a temperature control layer 300 are sequentially stacked, and the heating layer 100 and the temperature control layer 300 are separated by the dielectric layer 200. In a normal use state of the bearing device, the heating layer 100 is located at the uppermost position, the dielectric layer 200 is located at the middle position, and the temperature control layer 300 is located at the lowermost position.
A wafer carrying surface is disposed on a side of the heating layer 100 away from the dielectric layer 200, and a wafer can be placed on the wafer carrying surface and directly heated by the wafer carrying surface. It should be noted here that, the wafer on the wafer bearing surface on one side of the heating layer 100 can be directly heated, and one side of the heating layer 100 departing from the wafer bearing surface is blocked by the dielectric layer 200, and the speed of transferring the heat of the heating layer 100 to the temperature control layer 300 can be reduced by the dielectric layer 200, so that the transfer speed of the heat quantity on the side is slower than the transfer speed of the heat quantity to the wafer, that is, in the short time of heating the heating layer 100, due to the existence of the dielectric layer 200, the heat produced by the heating layer 100 can be blocked to a certain extent from being transferred towards the direction of the temperature control layer 300, so that a large amount of heat produced by the heating layer 100 is transferred towards the direction of the wafer, and further the rapid heating of the wafer is realized.
Alternatively, heating layer 100 may be made of pure titanium (CP-Ti), temperature control layer 300 may be made of aluminum, and both heating layer 100 and temperature control layer 300 have good thermal conductivity. Heat is rapidly transferred to the wafer carrier surface by the heater layer 100 and the wafer is heated by the wafer carrier surface. In addition, the dielectric layer 200 may be made of a ceramic material, which has a better thermal conductivity, but the heating layer 100 has a better thermal conductivity, so that heat is mainly conducted in the heating layer 100 in a short time when the heating layer 100 is heated, that is, the dielectric layer 200 has a blocking effect on heat to some extent in the short time. As the temperature of the heating layer 100 gradually increases, the amount of heat transferred to the dielectric layer 200 gradually increases, so that the dielectric layer 200 is heated and gradually transferred to the temperature control layer 300 through the dielectric layer 200.
When the wafer is cooled, the speed of transferring the heat of the heating layer 100 to the temperature control layer 300 can be increased by the temperature control layer 300. Optionally, a cooling medium may be introduced into the temperature control layer 300, wherein the cooling medium may circulate to absorb heat from the medium layer 200. In addition, the temperature control layer 300 may also be made of a material with a high thermal conductivity, and the heat on the dielectric layer 200 may be rapidly transferred to other components through the temperature control layer 300, so as to rapidly cool the dielectric layer 200 and the heating layer 100. Compare in the mode that realizes the wafer cooling through the distance between increase wafer and the heating element, also promptly, through the thermal mode of air transfer, loop through zone of heating 100 and dielectric layer 200 in this application embodiment to realize the rapid cooling to the wafer through the heat transfer medium in the accuse temperature layer 300, promoted cooling rate, shortened process time, thereby promoted process efficiency greatly.
In order to control the temperature more accurately, the temperature measuring device 400 is additionally arranged in the embodiment of the application, the temperature on the wafer bearing surface can be detected in real time through the temperature measuring device 400, the actual heating temperature of the wafer is fed back through the actual detected temperature on the wafer bearing surface, and therefore the temperature can be accurately regulated and controlled. Alternatively, the temperature measuring device 400 may be a thermocouple.
Compare in adopting elevating system drive wafer to go up and down and change the mode that the temperature of wafer was adjusted to distance between wafer and the heating element, the temperature control effect in this application embodiment is more accurate, and the wafer can not make elevating movement along with elevating system among the heating process to the phenomenon of wafer skew can not appear, the position precision of wafer has been guaranteed, meanwhile, this application embodiment can realize rapid heating up and rapid cooling, and need not to wait for, has reduced the process time, has promoted process efficiency.
With continued reference to fig. 3, in some embodiments, the heating layer 100 includes a heating portion 110 and a fixing portion 120, wherein the heating portion 110 is located at a middle region of the heating layer 100 and the fixing portion 120 is located at an outer edge of the heating portion 110. Therefore, when the wafer is placed on the wafer bearing surface, the wafer can be heated in all directions by the heating part 110, so that all parts of the wafer can be heated. The heating layer 100 may be fixed on the dielectric layer 200 by the fixing part 120. Optionally, a plurality of fixing holes 121 are disposed at the fixing portion 120, and the fixing of the heating layer 100 is achieved through the fixing holes 121.
In order to make the heat on the wafer more uniform, the heating portion 110 in the embodiment of the present application is divided into a plurality of heating zones, and the plurality of heating zones are distributed around the center of the heating layer 100 in a central symmetry manner, as shown in fig. 3. In the embodiment of the present application, the heating portion 110 is divided into a plurality of heating zones, which can respectively heat the zones corresponding to the respective heating zones on the wafer, and the heating parameters of the respective heating zones are substantially the same, so that the heating conditions of the respective heating zones on the wafer are substantially the same, and further, the heating at the respective positions on the wafer is more uniform. In some embodiments, the heating layer 100 is a circular sheet structure, and the plurality of heating regions are centrosymmetric with respect to the center of the heating layer 100, so that the wafer can be heated more uniformly, and thus, the wafer can be heated uniformly at each position, and the performance of the wafer can be improved. Based on the arrangement, the temperature difference between the center and the edge of the heating layer 100 can be controlled within +/-5 ℃, and the actual process requirements are met.
With continued reference to fig. 3, in some embodiments, the heating part 110 includes a heating wire 111, and the heating wire 111 is provided in an armoured manner. In the embodiment of the present application, a layer of metal protection may be added outside the heating wire 111 to prevent the heating wire 111 inside from being damaged.
In order to rapidly cool the wafer, a flow channel (not shown in the figure) is disposed in the temperature control layer 300, and a heat exchange medium may be filled in the flow channel, so as to absorb part of the heat through the heat exchange medium, so as to cool the heating layer 100. The specific process is as follows: when the wafer needs to be cooled, a heat exchange medium is introduced into the flow channel and can circularly flow in the flow channel, at the moment, the overall temperature of the temperature control layer 300 is relatively low, the temperature of the heating layer 100 after being heated is relatively high, the temperature of the dielectric layer 200 in contact with the heating layer 100 is also high, and the temperatures of the heating layer 100 and the dielectric layer 200 are higher than that of the temperature control layer 300. Therefore, the heat of the dielectric layer 200 can be continuously transferred to the temperature control layer 300, so that the heat is absorbed and taken away by the heat exchange medium, and the cooling effect on the dielectric layer 200 is realized. When the temperature of the dielectric layer 200 is lowered to be lower than that of the heating layer 100, the heat of the heating layer 100 is continuously transferred to the dielectric layer 200, thereby lowering the temperature of the heating layer 100. By cooling the heating layer 100, the wafer disposed on the wafer carrying surface can be cooled to achieve a temperature meeting the process requirements.
Referring to fig. 2, in some embodiments, the heating layer 100 further includes a flange portion 130, and the flange portion 130 extends from a side of the heating layer 100 opposite to the wafer carrying surface toward the dielectric layer 200 and the temperature control layer 300 and sequentially penetrates through the dielectric layer 200 and the temperature control layer 300. Alternatively, the flange portion 130 may be located in a middle region of the heating layer 100, when the heating layer 100 is assembled to the dielectric layer 200 and the temperature control layer 300, a side of the heating layer 100 facing away from the wafer bearing surface abuts against a surface of the dielectric layer 200, and the flange portion 130 passes through a middle portion of the dielectric layer 200 and a middle portion of the temperature control layer 300. Based on this, the heating layer 100 can be mounted on the dielectric layer 200 and the temperature control layer 300 to some extent by the flange portion 130.
In addition, a channel 131 is formed on the flange portion 130, and the cable of the carrying device is inserted into the channel 131. Since the heating layer 100 needs to be powered during the heating process, the power line for power supply can be passed through the channel 131 on the flange portion 130, thereby effectively avoiding the influence on the normal use of the carrying device caused by the wire routing from other positions.
With continued reference to fig. 2, in order to achieve the fixed mounting of the carrier, the carrier in the embodiment of the present application further includes a support 500, through which the carrier 500 can be assembled to the reaction chamber 800 to achieve the fixing of the carrier. In some embodiments, the temperature control layer 300 is fixed on the support 500, and the support 500 can support and fix the carrier, so that the carrier can be more stably assembled into the reaction chamber 800. Further, the flange portion 130 of the heating layer 100 is abutted against the support member 500 after passing through the dielectric layer 200 and the temperature control layer 300. Based on this, after the heating layer 100, the dielectric layer 200, the temperature control layer 300 and the support member 500 are fixedly installed, since the flange portion 130 penetrates through the dielectric layer 200 and the temperature control layer 300, the dielectric layer 200 and the temperature control layer 300 can be limited to a certain extent by the flange portion 130, thereby effectively preventing the dielectric layer 200 and the temperature control layer 300 from being dislocated relative to the heating layer 100, and further ensuring the installation accuracy among the heating layer 100, the dielectric layer 200 and the temperature control layer 300.
Alternatively, a passage provided opposite to the channel 131 of the flange portion 130 is provided on the support 500, and the power line of the heating layer 100 may extend to the outside of the reaction chamber 800 via the channel 131 of the flange portion 130 and the passage of the support 500.
With continued reference to fig. 2, in order to improve the sealing performance of the reaction chamber 800, a first sealing member 710 is disposed between the flange portion 130 and the support 500 in the embodiment of the present application, and the first sealing member 710 is used for sealing the flange portion 130 and the support 500. Optionally, the end face of the flange part 130 opposite to the support 500 and the end face of the support 500 are sealed by the first sealing member 710, so that a vacuum degree that cannot be actually required in the reaction chamber 800 due to a gap between the flange part 130 and the support 500 can be effectively prevented.
With continued reference to fig. 2, in order to assemble the heating layer 100, the dielectric layer 200 and the temperature control layer 300, the carrier device in the embodiment of the present application further includes a fastener 600, and the fixed assembly of the above structure can be achieved by the fastener 600. Specifically, a plurality of fixing holes 121 are formed in the fixing portion 120 of the heating layer 100 along the circumferential direction thereof, and the fastening member 600 penetrates the temperature control layer 300 and the dielectric layer 200 from one side of the temperature control layer 300, correspondingly penetrates the fixing holes 121, and is in threaded connection with the fixing holes 121. Optionally, through holes are respectively formed in the dielectric layer 200 and the temperature control layer 300, the fastening member 600 may be a fastening screw, and the fastening screw sequentially penetrates through the through hole of the temperature control layer 300 and the through hole of the dielectric layer 200 from one side of the temperature control layer 300 and is screwed into the fixing hole 121, so that the heating layer 100, the dielectric layer 200 and the temperature control layer 300 are detachably connected.
Further, a through hole may be further provided at a region of the supporting member 500 contacting the temperature-control layer 300, so that, when the temperature-control layer 300 is assembled to the supporting member 500, the fastening member 600 may sequentially pass through the through hole of the supporting member 500, the through hole of the temperature-control layer 300, and the through hole of the dielectric layer 200, and be in threaded connection with the fixing hole 121 of the heating layer 100, thereby fixing the temperature-control layer 300, the dielectric layer 200, and the heating layer 100 on the supporting member 500.
Referring to fig. 1, in some embodiments, the carrier further includes a support 500, the support 500 including a support portion 510 and a mounting portion 520. The supporting portion 510 is used for supporting the temperature control layer 300, and the mounting portion 520 is used for being fixed on the reaction chamber 800. The support portion 510 has a support surface on which the temperature control layer 300 is fixed. Alternatively, the temperature control layer 300 may be welded on the supporting surface to achieve the fixation of the temperature control layer 300 and the support 500. The temperature control layer 300 can be supported and fixed by the supporting surface.
The mounting part 520 has a cavity 521 penetrating in the axial direction, and a protrusion 511 is formed on a side of the supporting part 510 facing away from the supporting surface, and the protrusion 511 is at least partially disposed in the cavity 521. Alternatively, the support portion 510 may be a circular disk-shaped structure, and a middle region thereof is provided with a protrusion 511, and the protrusion 511 is located at a side facing away from the temperature control layer 300. When mounting, the protrusion 511 is partially or completely inserted into the cavity 521 of the mounting part 520, so that the mounting of the supporting part 510 and the mounting part 520 is achieved by the mutual assembly of the protrusion 511 and the cavity 521. In addition, other fixing methods, such as welding, screwing, etc., may be adopted between the supporting portion 510 and the mounting portion 520, and the fixing method of the supporting portion and the mounting portion is not limited in the embodiment of the present application.
In order to assemble the mounting part 520 to the reaction chamber 800, in the embodiment of the present application, the outer wall of the mounting part 520 at an end region facing away from the supporting part 510 is provided with a first plate 530. Alternatively, the first plate 530 may be an annular plate, which is sleeved on the periphery of the mounting portion 520 and is fixedly connected with the outer wall of the mounting portion 520, for example, welded or the like. As such, in a case where the carrier is assembled to the reaction chamber 800, the first plate 530 is supported and fixed with the bottom of the reaction chamber 800. Alternatively, a corresponding insertion groove 810 may be provided at the bottom of the reaction chamber 800, and the first plate 530 is placed in the insertion groove 810 and supported by the insertion groove 810. In order to make the fixing more stable, the fixing plate 900 may be additionally provided, after the first plate 530 of the mounting portion 520 is matched with the bottom of the reaction chamber 800, the fixing plate 900 is abutted against the outer end face of the bottom of the reaction chamber 800, and then the fastening screw is screwed to connect the fastening screw with the mounting portion 520, under the fastening action of the fastening screw, the fixing plate 900 compresses the outer end face of the bottom of the reaction chamber 800, and the first plate 530 on the mounting portion 520 compresses the inner end face of the bottom of the reaction chamber 800, thereby realizing the fixed mounting of the mounting portion 520 and the bottom of the reaction chamber 800.
Referring to fig. 2, in some embodiments, the outer wall of the mounting portion 520 at an end region facing away from the supporting portion 510 is further provided with a second plate 540 spaced apart from the first plate 530. Alternatively, the first plate 530 may be an annular plate, and the first plate 530 is sleeved outside the mounting portion 520 and is fixedly connected to the outer side wall of the mounting portion 520, for example, welded or the like. The second plate 540 is located at an end surface of the mounting part 520 facing away from the supporting part 510, and the peripheral dimension of the second plate 540 is smaller than that of the first plate 530. As such, it may be installed by the first plate 530 and the second plate 540 together to be fitted to the bottom of the reaction chamber 800.
In order to improve the sealing performance of the reaction chamber 800, a second sealing member 720 is provided in the groove 550 formed between the first plate 530 and the second plate 540 in the embodiment, the second sealing member 720 is used to seal the support member 500 and the reaction chamber 800, and the second sealing member 720 can be restricted from moving by the first plate 530 and the second plate 540. With the carrier assembled to the reaction chamber 800, the second seal 720 is located between the first plate 530 and the reaction chamber 800. Optionally, the second sealing member 720 is disposed between the first plate 530 and the inner end surface of the bottom of the reaction chamber 800, and the second sealing member 720 is pressed by the first plate 530 and the inner end surface of the bottom of the reaction chamber 800, so that the gap between the first plate 530 and the inner end surface of the bottom of the reaction chamber 800 can be sealed by the second sealing member 720, and a good sealing effect is achieved.
The embodiment of the present application further discloses a reaction chamber 800 of a semiconductor processing apparatus, and the reaction chamber 800 of the disclosed semiconductor processing apparatus includes the above-mentioned carrying device.
To sum up, can realize the quick temperature rise and the cooling of wafer through bearing device in this application embodiment, compare in adopting elevating system drive wafer to go up and down and change the temperature mode that the wafer was adjusted to the distance between wafer and the heating element, the temperature control effect in this application embodiment is more accurate, and the wafer can not make elevating movement along with elevating system among the heating process, thereby the phenomenon of wafer skew can not appear, the position accuracy of wafer has been guaranteed, meanwhile, this application embodiment can realize rapid heating up and rapid cooling, and need not to wait, the process time has been reduced, the process efficiency has been promoted.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A carrier apparatus for use in a reaction chamber (800) of a semiconductor processing apparatus for carrying a wafer, the carrier apparatus comprising: the temperature measuring device comprises a heating layer (100), a dielectric layer (200), a temperature control layer (300) and a temperature measuring device (400), wherein the heating layer (100), the dielectric layer (200) and the temperature control layer (300) are sequentially stacked, and the temperature measuring device (400) is arranged in the heating layer (100), and a wafer bearing surface is arranged on one side, away from the dielectric layer (200), of the heating layer (100);
the heating layer (100) is used for heating the wafer loaded on the wafer loading surface;
the dielectric layer (200) is used for separating the heating layer (100) from the temperature control layer (300) so as to reduce the speed of transferring the heat of the heating layer (100) to the temperature control layer (300) when the wafer is heated;
the temperature control layer (300) is used for increasing the speed of transferring the heat of the heating layer (100) to the temperature control layer (300) when the wafer is cooled;
and the temperature measuring device (400) is used for detecting the temperature of the wafer bearing surface.
2. The carrying device according to claim 1, wherein the heating layer (100) includes a heating portion (110) and a fixing portion (120) provided at an outer edge of the heating portion (110);
the heating part (110) is divided into a plurality of heating zones, and the plurality of heating zones are distributed around the center of the heating layer (100) in a centrosymmetric manner.
3. The carrying device according to claim 1, wherein the temperature control layer (300) is provided with a flow channel for charging a heat exchange medium, and the heat exchange medium is used for absorbing heat.
4. The carrying apparatus according to claim 1, wherein the heating layer (100) further comprises a flange portion (130), the flange portion (130) extends from a surface of the heating layer (100) facing away from the wafer carrying surface toward the dielectric layer (200) and the temperature control layer (300) and penetrates through the dielectric layer (200) and the temperature control layer (300) in sequence;
the flange part (130) is provided with a channel (131), and the cable of the bearing device is arranged in the channel (131) in a penetrating way.
5. The carrying device according to claim 4, further comprising a support (500), wherein the temperature control layer (300) is fixed on the support (500), and the flange portion (130) is abutted to the support (500) after passing through the medium layer (200) and the temperature control layer (300).
6. The carrying arrangement according to claim 5, characterized in that a first seal (710) is provided between the flange part (130) and the support (500), the first seal (710) being adapted to seal the flange part (130) and the support (500).
7. The carrier of claim 2, further comprising a fastener (600);
a plurality of fixing holes (121) are formed in the fixing portion (120) along the circumferential direction of the fixing portion, and the fastening piece (600) penetrates the temperature control layer (300) and the medium layer (200) in sequence and is in threaded connection with the fixing holes (121).
8. The carrying device according to claim 1, characterized in that the carrying device further comprises a support member (500), the support member (500) comprises a support portion (510) and a mounting portion (520), the support portion (510) has a support surface, the temperature control layer (300) is fixed on the support surface, the mounting portion (520) has a cavity (521) which penetrates along the axial direction, a protrusion (511) is formed on one side of the support portion (510) which is far away from the support surface, and the protrusion (511) is at least partially arranged in the cavity (521).
9. The carrying device according to claim 8, characterized in that the outer wall of the mounting portion (520) facing away from the end region of the support portion (510) is provided with a first plate (530), the first plate (530) being supported and fixed with the bottom of the reaction chamber (800) in the state of the carrying device being fitted to the reaction chamber (800);
the outer wall of one end region, deviating from the supporting part (510), of the mounting part (520) is further provided with a second plate (540) arranged at an interval with the first plate (530), a groove (550) is formed between the first plate (530) and the second plate (540), a second sealing element (720) is arranged at the position of the groove (550), and the second sealing element (720) is used for sealing the supporting part (500) and the reaction chamber (800).
10. A reaction chamber of semiconductor processing equipment, comprising the carrier of any one of claims 1-9.
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| CN202120917750.0U CN214753669U (en) | 2021-04-29 | 2021-04-29 | Bearing device and reaction chamber of semiconductor process equipment |
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| CN202120917750.0U CN214753669U (en) | 2021-04-29 | 2021-04-29 | Bearing device and reaction chamber of semiconductor process equipment |
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| CN114678296A (en) * | 2022-03-11 | 2022-06-28 | 智程半导体设备科技(昆山)有限公司 | Wafer heating device |
| CN115938995A (en) * | 2023-02-24 | 2023-04-07 | 深圳市新凯来技术有限公司 | Wafer heating device and semiconductor processing equipment |
| TWI822590B (en) * | 2022-02-16 | 2023-11-11 | 大陸商北京北方華創微電子裝備有限公司 | Wafer placement state detection method, semiconductor process chamber and apparatus |
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| CN114156206A (en) * | 2021-11-24 | 2022-03-08 | 北京北方华创微电子装备有限公司 | Chuck assembly of semiconductor processing equipment and semiconductor processing equipment |
| TWI822590B (en) * | 2022-02-16 | 2023-11-11 | 大陸商北京北方華創微電子裝備有限公司 | Wafer placement state detection method, semiconductor process chamber and apparatus |
| CN114678296A (en) * | 2022-03-11 | 2022-06-28 | 智程半导体设备科技(昆山)有限公司 | Wafer heating device |
| CN115938995A (en) * | 2023-02-24 | 2023-04-07 | 深圳市新凯来技术有限公司 | Wafer heating device and semiconductor processing equipment |
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