200952113 六、發明說明： 【發明所屬之技術領域】 【0001】 本發明係關於一種從收納著半導體晶圓等被處理體的收容匣 盒將被處理體移載到被處理體移載區域内的被處理體承載部上以 對被處理體實施熱處理的處理系統以及被處理體移載機構。 【先前技術】 [0002] 一般而吕，為了製造1C或LSI等半導體積體電路，會對半導 〇 體晶圓重複各種成膜處理、氧化擴散處理、蝕刻處理等製程，在 卞施各處理時，必須在對應的裝置之間運送半導體晶圓。此時， 半導體晶圓以一次複數片的方式，例如以一次25片的方式，被運 • 送1 丨收雜盒时容。這觀倾盒，係在對大氣開放的狀態下 '進行運送的E盒’如前開口式通用容器（Front Opening Unified P+〇d ; FOUP ;註冊商標）那樣，為了抑制粒子或自然氧化膜的附 著，會在關閉蓋關成密封狀態的箱子_成&氣體等非活性 氣體環境或清淨空氣的氣體環境（參照專利文獻丨〜3)。 【0003】 然後，處理上述收容匣盒的處理系統，例如分批式處理系統， ® 一般都會有利用運送機構運送上述收容匣盒的匣盒運送區域，以 及為了對半導體晶圓進行熱處理而從該收容匣盒將半導體晶圓移 載到晶圓承載部(晶舟)等構件上的被處理體移載區域（參照例如專 利文獻4〜6)。然後，兩區域被區隔壁分隔開，區隔壁設有可開閉 的開口閘門，用來傳遞晶圓，由於被處理體在裸露狀態下運送， 為了防止晶圓表面上附著自然氧化膜等，會在上述被處理體移載 區域内形成非活性氣體環境，例如氮氣環境，或形成清淨空氣環 境。 【0004】 然後，在上述被處理體移載區域中，如上所述收容有例如25 200952113 ^曰曰圓的收容匣盒内的晶圓，被晶圓移載機構移載到由石英等材 料，構成而作為被處理體承載部之用的晶圓承載部上。該晶圓承 載部以多段方式保持複數片晶圓，例如5〇〜15〇片左右，各晶圓 之間保持相等間隔距離。又同樣地，在對晶圓完成熱處理之後， 再用十述移載機構，以跟上述程序相反的程序，從晶圓承載部將 晶圓送回收容匣盒。 【0005】 在此，一般的縱型熱處理單元，其所使用的石英製的晶圓承 ，會在構成晶圓承載部的支柱上形成支持晶圓邊緣的晶圓支 ❹[Technical Field] [0001] The present invention relates to a method of transferring a to-be-processed object from a storage cassette containing a to-be-processed object, such as a semiconductor wafer, to the to-be A processing system for performing heat treatment on the object to be processed and a to-be-processed object transfer mechanism on the object to be processed portion. [Prior Art] [0002] In general, in order to manufacture a semiconductor integrated circuit such as a 1C or an LSI, various processes such as a film forming process, an oxidative diffusion process, and an etching process are repeated for a semiconductor wafer, and various processes are performed. At the time, the semiconductor wafer must be transported between the corresponding devices. At this time, the semiconductor wafer is transported in one piece at a time, for example, in a single 25-piece manner. This viewing box is an E-box that is transported in an open state, such as a front-opening general-purpose container (Front Opening Unified P+〇d; FOUP; registered trademark), in order to suppress adhesion of particles or natural oxide film. In the atmosphere of the inert gas atmosphere such as a gas container or a clean air such as a gas container (see Patent Document 丨 to 3). [0003] Then, the processing system for processing the storage cassette, such as a batch processing system, generally has a cassette transport area for transporting the storage cassette by a transport mechanism, and for heat treatment of the semiconductor wafer. The semiconductor cassette is transferred to a workpiece transfer region on a member such as a wafer carrier (boat) (see, for example, Patent Documents 4 to 6). Then, the two areas are separated by a partition wall, and the partition wall is provided with an openable and openable gate for transferring the wafer. Since the object to be processed is transported in a bare state, in order to prevent the natural oxide film from adhering to the surface of the wafer, An inert gas atmosphere, such as a nitrogen atmosphere, or a clean air environment is formed in the above-described object transfer region. [0004] Then, in the above-described object transfer region, the wafer in the cassette containing, for example, 25 200952113 is accommodated as described above, and is transferred to a material such as quartz by the wafer transfer mechanism. It is configured as a wafer carrier for the object carrier. The wafer carrier holds a plurality of wafers in a plurality of stages, for example, about 5 〇 to 15 ,, and the wafers are equally spaced apart. Similarly, after the wafer is subjected to the heat treatment, the wafer transfer unit is used to transfer the wafer from the wafer carrier to the cassette in a procedure reverse to the above procedure. [0005] Here, a general vertical heat treatment unit uses a quartz wafer carrier to form a wafer support wafer edge on a pillar constituting the wafer carrier portion.
部，並在所謂階梯型的晶圓承載部或支柱之間以多段方式掛 設環狀的載置台，然後在各載置台上形成支持晶圓邊緣的支持爪 邛，此即所謂的環型晶圓承載部（參照專利文獻6等）。 【0006】 另外，在上述被處理體移載區域内使用上述移載機構於收容 便盒與晶圓承載部之間移載半導體晶圓時，由於各構件之間猶微 ^接觸或摩擦，無可避免的會在上述晶®本體、收容E盒本體， 甚至晶圓承載部本體上產生靜電❶若產生靜電，環境中漂浮的少 許粒子也會吸附靜電，進而使製品的成品率降低。 【0007】 因此 、-在1知的運送機構中，以除去上述產生之靜電為目的 而在被處理體移載區域内設置固定的電離器，或是以除去匣各之 圓移載時於晶圓上產生之靜電為目的而在移載機構的ί載 是部的連接根部上設置複數個電離器，藉此除去上述產生之 C參照例如專利文獻7 )。 【0008】 [專利文獻丨]日本特開平8-279546號公報 [專利文獻2]日本特開平9_306975號公報 [專利文獻3]曰本特開平η_274267號公報 [專利文獻4]日本特開2〇〇2_76〇89號公報 [專利文獻5]日本特開2003-37148號公報 200952113 [2文獻6] S本特開平9_213647號公報 I文獻7]日本特開平11-238778號公報 【發明内容】 [發明所欲解決的問題] [0009] 内，便斤離器固定設置在被處理體移載區域 子）的靜ί 度的帶電處所的靜電或漂浮帶電塵（粒 ❹ 【0010】 分區以:產:S在被處理體移載區域内移載機構所移動的大部 電處ίϊ 而上述習知構造很難充分且有效地將該等帶 上設置電。此時’雖然可在移載機構的所有移動區域 加設備成本，並非實用的因應對策。益的。又置口數增加，大幅增 【0011】 去除ί伴的連接根部上設置電離器’雖然能夠有效地 古二ιίΐ持在移射部上的晶圓本體所產生的靜電，但是卻血法 5=除掉晶圓承載部本體或收容Ε盒本體所產生的靜電了而 且在此情況下電離器的設置數量也會太多。贼的㈣而 w 【0012】 爲址有==_點，本發明之目的在於有效解決該等問題。 fL發月k供一種用少數台的離子產生機構便能夠去除掉在 區域内的寬廣範圍中的帶電處所的靜電以及漂 【0013】 求ΐ 1之發明係—種被處理體的移載機構，其在收容E各 移動載置被處理體；該收容£盒以複2 又、式呆寺並收谷複數被處理體；該被處理體保持機構以複數 200952113 處理體’並將被處理體裝载到用來對被處理體 ^既疋處理的處理容器内，或從該處理容器卸載被處理體；^ ΐΐΐϊίϊΐ構的特徵為包含：昇降台，其受昇降機構驅動而〆 降；叉狀機構，其設置在該昇的上’載置被處理 旋轉；以及離子產生機構，其設置在該又狀機 構上並產生能夠去除掉靜電的離子。 【0014】 、像這樣，在收容被處理體的收容匣盒與對處理容器實施裝載 以及卸載的被處理體保持機構之間移載被處理體的移載機構，由 〇And attaching a ring-shaped mounting table in a plurality of stages between the so-called stepped wafer carrying portions or the pillars, and then forming support claws on the mounting bases to support the edge of the wafer. This is called a ring-shaped crystal. A circular bearing portion (see Patent Document 6, etc.). [0006] Further, when the semiconductor wafer is transferred between the storage case and the wafer carrying portion by using the transfer mechanism in the object transfer region, the member is slightly contacted or rubbed between the members. It can be avoided that static electricity is generated in the above-mentioned Crystal® body, the E-box body, and even the wafer carrier body. If static electricity is generated, a small amount of particles floating in the environment will also adsorb static electricity, thereby reducing the yield of the product. Therefore, in a known transport mechanism, a fixed ionizer is provided in the transfer area of the object to be processed for the purpose of removing the static electricity generated as described above, or in the case where the transfer of the circle is removed. For the purpose of static electricity generated on the circle, a plurality of ionizers are provided on the connecting root portion of the transfer mechanism, thereby removing the C reference generated as described above, for example, Patent Document 7). [Patent Document 3] Japanese Patent Laid-Open Publication No. Hei 9-306975 (Patent Document 3) Japanese Patent Laid-Open Publication No. H07-274267 (Patent Document 4) [Patent Document 5] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The problem to be solved] [0009] In the charged position of the charged area of the object to be treated, the static electricity or floating charged dust (particles [0010] partitioned to: The majority of the movements of the transfer mechanism in the transfer area of the object to be processed are difficult to fully and effectively set the electricity to the above-mentioned conventional structures. At this time, although all movements of the transfer mechanism are possible The cost of adding equipment to the area is not a practical countermeasure. Benefits. The number of ports is increased, and the number of ports is increased. [0011] The ionizer is set on the root of the connection with the ί mate. Although it can effectively stay on the moving part. The static electricity generated by the wafer body, Yes, but the blood method 5 = remove the static electricity generated by the body of the wafer carrier or the body of the cassette, and in this case the number of ionizers will be too much. The thief's (four) and w [0012] for the address = = _ point, the object of the present invention is to effectively solve the problems. The fL singularity k is for a small number of ion generating mechanisms to remove the static electricity and drift of the charged space in a wide range in the area [0013] The invention of ΐ 1 is a transfer mechanism of a processed object, wherein the object to be processed is placed in each of the housings E; the storage box is multiplexed, and the temple is collected and the plurality of objects are processed; The body holding mechanism loads the processed body into the processing container for processing the object to be processed or unloads the processed object from the processing container in the plural number 200952113; the feature of the body is: a lifting platform driven by the lifting mechanism to descend; a fork mechanism disposed on the upper portion of the lift to be processed to rotate; and an ion generating mechanism disposed on the latch mechanism to generate static electricity capable of removing static electricity Ion. [0014 In this way, the transfer mechanism of the object to be processed is transferred between the storage cassette that houses the object to be processed and the object holding mechanism that loads and unloads the processing container.
ΐίίϊ並移動被處理體的叉狀機構上設置能夠去除靜電的離子 Α Ή _故2要°又至少數台的離子產生機構，便能去除掉在例 區域内的寬廣範圍中的帶電處所的靜電以及漂浮 帶電塵粒的靜電。 【0015】 I2的發明’係於如請求項1的發明中，該叉狀機構係 以下構件所構成：旋轉台，其以可旋轉 其設置在該旋轉台上且載置該被處^；·前進以 及後退。 if"項3的發明’係於如請求項2的發明中，該叉狀機構具 織轉纟上且在前端部^設有可侧有無嫌處理體的 光感應|§且能夠前進以及後退的附感應器叉 【0016】 請求項4的發明，係於如請求項2或3的發明中，該離子產 生機構設置在該旋轉台上。 二凊求項5的發明，係於如請求項2至4中任一項的發明中， 5亥產生機構設有供應載體氣體的載體氣體供給機構，且該離 子產$機構的離子吹出喷嘴設置在該旋轉台的 【0017】 > π求項6的發明，係於如請求項3的發明中，該離子產生機 構設置在該附感應器的叉本體上。 7 200952113 凊求項7的發明，係於如請求項3或6的發明中，該離子產 生機構設有供應載體氣體的載體氣體供給機構，續離手產生機 的離子吹出喷嘴設置在該附感應器的叉本=前=^產生機構 【0018】 請求項8的發明，係於如請求項5或7的發明中，該離子吹 出嘴嘴上設置有讓該離子吹出方向擴散的擴散頭。 的發明’係於如請求項5或7的發明中，該離子吹 出嘴有用來改變該離子吹出方向的可調向葉片。 ❹ 更明H如請求項1至9中任一項的發明中’ 二3躺感應器，其設置在該離子吹出區域内；以及 產生機作其娜該㈣錢观絲的侧健制該離子 該離離器係於如請求項1至ι〇中任一項的發明中’ [0020] 請求項12的發明，係於如請求項1 , 來。 該處理容3係3由的二上2:任；·，的發明中 成的裝設著能夠以氣密方^裝卸i罩ί英製圓筒體所相 睛求項14的發明，係於如請灰 該被處3下方 在該任-_發明中， 請求項16之發明，係—狂α # 數被處理體的_盒取出心==== 纽村騎賴，封中起 ❹ 〜200952113 特徵為包含：縱型處理單元，其設有絲對該被處理體實 ^方^周圍被區隔壁所區隔；被處理體保持機構，其 方式保持该被處理體；保持機構用昇降機構， ^處理容ϋ卸載該被處理體保持機構；以及請求項丨至 Κίϊίϊίΐΐί載機構’其在該收容11盒與該被處理= 該移載處壁Γ收容s盒設置在移載處理台上， [對照先前技術之功效] ❹ 【0023】 統，iiim皮異處的m移果載機構以及被處理想的處理系 知恭t在收容被處理體的收容11盒與對處理容器進付載以及 t If —㈣處理體雜觸之财倾處雜轉錢構在載 =動;處理體的叉狀機構上設置離子產生機構载 域内t ίϊίϊ=ίί?構’就能去除在例如被處理體移載區 廣範圍中的帶電處所的靜電以及漂浮帶電塵粒的靜電。 【實施方式】 【0024】 個實m、概略構造圖’顯示本發明之被處賴的處理系统的- 移載機構該區域内設置有本發明之被處理體的 的氣流·’圖4 23圖翻顯示被處理體移載區域内的清淨氣體 列位置與移載機禮f，顯不被處理體移載區域内各構成要件排 產生機的一個實施例；圖5係顯示具有離子 移載機構的放大立體圖；圖6係顯示移載機構的叉狀 200952113 機構的側視圖·，圖7係顯示離子產生機構的各種態樣的方塊構造 圖。 【0025】 首先，如圖1以及圖2所示的，該被處理體的處理系統2整 j被框體〇斤包圍，該框體4具備區隔壁的功能，由例如不銹鋼 ，材料所構成，其内部被區隔壁12分成用來運送收容匣盒6的收 容匣盒運送區域8，以及用來移載作為被處理體之半導體晶圓w 的被處理體移載區域10。又，在此晶圓W係使用直徑的 晶圓，惟並非以此為限，亦可使用直徑45〇_、8英吋、6英 晶圓_。 、 、 〇 【嶋】 上述收容匣盒6内可收容複數片晶圓，例如25片， f狀的方式受到支樓，該收容匿盒6被開閉蓋部6A密封起I，内 ^形成N2氣體等非活性氣體環境或清淨空氣環境。然 盒運送區域8内以降流方式流動，上述被處理^ 移载區域10内形成非活性氣體環境，後述Ν2氣體 的清淨氣體的侧流在該被處理體移載區域10内流 / I; 10内也會有清淨空氣流動的情況。 通X孤域 【0027】 ❹“該Ϊ理系統2，主要是由以下構件所構成：送出送入填14， 邻盒6送入處理系統2内部，或從處理系t 2内 ===部16，其用來暫時儲存上述收容匿盒6 ; 移載處理口 20，其在該收容匿盒6與作為 圓承載部18之間移載半導體晶圓w ;處理单處元里==== 承載，18上而被晶圓承載部18所支持的半導 施既定的熱處理。 』卞守锻日日圓W實 [0028] 盒插送 啟或關閉。紐盒送出人σ 24上設置有外侧載“ 200952113 來Λ置Γ外部運送過來的收容匿盒6。該外側载p .載置二 口 28 ’該滑盯板28可在其上載置著收容昆盒6的狀行: 【0029】 斗私ί外’上述暫存部16位於收容11盒運送區域8内邱的卜古 =16設置有棚台3〇，在圖示的實施Ϊ二=:: ❹ 2列2段方式並排的棚台3g上。二 【0030】 別限定，實際上可設置更多數量。 ㈣機台32以豎立方式設置在上述2個棚台3〇之間，★亥昇 32战置有可脉平额前進魏以 ^ e 部34屈伸以及昇降，而將Gig χ錢岐人埠14繼部16之 【0031】叉ίίϊ and moving the forked mechanism of the object to be processed is provided with an ion Α 能够 故 故 故 要 要 要 2 ° ° at least several ion generating mechanisms, can remove the static electricity in a wide range of charged places in the example area And static electricity that floats charged dust particles. [0015] The invention of claim 2 is the invention of claim 1, wherein the fork mechanism is constituted by a rotating table that is rotatably disposed on the rotating table and that is placed on the rotating table; Go forward and back. If the invention of claim 3 is in the invention of claim 2, the fork mechanism has a woven turn and is provided with light sensing on the front end portion that can be disposed on the side of the susceptible body and can be advanced and retracted. Inductive fork [0016] The invention of claim 4, wherein the ion generating mechanism is disposed on the rotating table. The invention according to any one of claims 2 to 4, wherein the 5H generating mechanism is provided with a carrier gas supply mechanism for supplying a carrier gas, and the ion blowing nozzle of the ion generating mechanism is disposed. In the invention of claim 3, in the invention of claim 3, the ion generating mechanism is disposed on the fork body of the sensor. In the invention of claim 3 or 6, the ion generating mechanism is provided with a carrier gas supply mechanism for supplying a carrier gas, and an ion blowing nozzle which is continued from the hand generator is disposed at the induction sensor The invention of claim 8 is the invention of claim 8 or claim 7, wherein the ion blowing nozzle is provided with a diffusion head for diffusing the ion blowing direction. According to the invention of claim 5 or 7, the ion blowing nozzle has an adjustable vane for changing the direction in which the ion is blown. ❹ More clearly H. The invention according to any one of claims 1 to 9, wherein the two-third lying sensor is disposed in the ion blowing region; and the generating machine is used as the side of the (4) Qianguan silk. The alien is attached to the invention of any one of claims 1 to ι ' [0020] The invention of claim 12 is as claimed in claim 1. According to the invention of the second aspect of the invention, the invention of the invention is based on the invention of the second embodiment of the present invention. If you ask the ash to be under the 3 in the _- invention, the invention of claim 16 is _ α α # number of processed objects _ box out of the heart ==== New Village riding Lai, sealed from the ❹ ~ 200952113 is characterized by comprising: a vertical processing unit, which is provided with a wire to be partitioned by the partition wall around the object to be processed; a processed body holding mechanism holding the object to be processed in a manner; and a lifting mechanism for the holding mechanism , ^ handles the unloading of the object to be processed by the object; and requests the item to be loaded in the container 11 and the container is placed in the transfer processing table [Compared with the effects of the prior art] ❹ [0023] The system of the iiim skin transfer and the processing of the processed object are known to contain 11 boxes of the object to be processed and the handling container and the handling container. t If — (4) processing the body of the miscellaneous touch of the money, the miscellaneous transfer of money in the carrier = movement; Art carrier-generating means t ίϊίϊ = ίί? Configuration 'can be removed and the static charges floating dust particles charged in the charging place, for example, a wide range of carrier is moved processed region. [Embodiment] [0024] A solid m, a schematic configuration diagram 'shows the transfer system of the treated system of the present invention - a transfer mechanism in which the object to be processed of the present invention is disposed in the region. Displaying the position of the clean gas column in the transfer area of the object to be processed and the transfer machine f, showing an embodiment of the constituent element row generating machine in the transfer area of the processed object; FIG. 5 shows the mechanism with ion transfer A magnified perspective view of Fig. 6 is a side view of a forked 200952113 mechanism showing the transfer mechanism. Fig. 7 is a block diagram showing various aspects of the ion generating mechanism. First, as shown in FIG. 1 and FIG. 2, the processing system 2 of the object to be processed is surrounded by a frame body, and the frame body 4 has a function of partitioning walls, and is made of, for example, stainless steel or a material. The inside is partitioned by the partition wall 12 into a cassette transporting area 8 for transporting the cassette 6 and a processed object transfer area 10 for transferring the semiconductor wafer w as a processed object. Further, in this wafer W, a wafer having a diameter is used, but it is not limited thereto, and a diameter of 45 Å, 8 Å, and 6 Å wafers may be used.嶋 嶋 嶋 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述 上述Such as an inert gas environment or a clean air environment. The inside of the cassette transporting area 8 flows in a downflow manner, and an inert gas atmosphere is formed in the processed transfer area 10, and a side stream of the clean gas of the Ν2 gas described later flows in the processed object transfer area 10/I; There will also be a clean air flow inside. XX孤域 [0027] ❹ "The treatment system 2 is mainly composed of the following components: the delivery and delivery 14, the adjacent box 6 is sent into the processing system 2, or from the processing system t 2 === 16, which is used for temporarily storing the above-mentioned containment box 6; a transfer processing port 20 for transferring the semiconductor wafer w between the containment box 6 and the circular carrying portion 18; processing a single unit ==== Carrying, 18 is supported by the wafer carrier 18 to support the given heat treatment. 』 锻 锻 锻 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日" 200952113 Λ Λ 收容 Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ The outer side load p. is placed on two sides 28'. The sliding board 28 can be placed on the row in which the box 6 is placed: [0029] The front storage unit 16 is located in the housing 11 transport area 8 The inner Qiu's Bugu = 16 is set up with a shed 3 〇, in the implementation of the illustration Ϊ 2 =:: ❹ 2 columns 2 paragraphs side by side of the shed 3g. [0030] Don't limit, you can actually set more. (4) The machine table 32 is placed in an upright manner between the above two sheds, 3 ★, 升 升 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Step 16 [0031]
陪二’f上述，處理台20中，在區隔出兩個區域8、10的區 隔i 12上，設置有僅比收容匣盒6的開閉蓋6A ❹ ϋΓ在該開Γ的收紐盒運送區域8該側，以水平口 叹置有載置台38，其上可載置收容。又，在置Α 3 二侧上設置有致動器40，可將載置於該载置台38上=^的 =向區隔壁12該側，在讓上述收盒6的開閉蓋6A ^ =口 36的狀態下，使收容£盒6關σ部的開口緣與區隔壁12 =口 36的開口緣約略氣密性地接觸。又，上述致動器4〇也可 以狄置成從上方推壓收容匣盒6而使其固定的態樣。 【0032】 … 严，該開口 36的被處理體移載區域1(Η亥側，以可幢方向 /月行的方式設置有能夠開啟或關閉該開口 36的開閉門門42。又 該開閉閘門42也能夠設置成可朝上下方向滑行移動二態樣。又，’ 11 200952113 ^開閉閘門42上^置糊相啟或關上敝練盒6的 6八的蓋開閉機構44 (參照圖2)。 【0033】 然後，在收容匣盒運送區域8内，在該開口 36附近設置有用 讓收容E盒6待機的待機用昆盒運送臂部46，其概盒運送 二34接收收納有接下來應該進域理的晶圓敝容匿盒6，並在 、、里過待機之後將該收容匣盒6移置到移載處理台 20上。又，也有 不設置上述待機盒運送臂部46的態樣，此時，上述g盒運送 臂部34會直接將收容匣盒6移置到移載處理台2〇上。 【0034】 ❹ 另一方面，在上述被處理體移載區域1〇内，設置有用來載置 晶，承載部18的2個承載部載置台，亦即，設置有移載用承載部 載置台48與待機用承載部載置台5〇。在上述2個承載部載置台 48扣5〇』之中該移載用承载部載置台48與上述移載處理台2〇 盖？Λ有:支術特徵的被處理體移載機構52。該移 載機構52主要具備昇降台56，其受昇降機構54驅動而朝上下方 向昇降；叉狀機構58，其可朝水平方向前進、後退以及旋轉；以 及^子產生機構60，其可產生能夠除去靜電的離子。又，該移載 機構52的構造容後詳述。 ❹ 【0035】 因此’若驅動該移載機構52的叉狀機構5S，使其前進、後退 ί 台38场收容e盒6赫糊承載部載置 台48上的晶圓承載部18之間移動載置晶圓w。在此，可設置複 數台晶圓承載部18，例如設置晶圓承載部18A、观共2台，然 也可以只設置1台或設置3台以上的晶圓 1 J η ’ Y、设置1台晶圓承載部18時，便不設置承載部載置 σ 其與後述罩蓋上的晶圓承載部之’動載置晶圓。 【0036】 該晶圓承載部18整體是由耐熱性材 備例如6根石英製的支柱。以等間距方式形成 12 200952113 例如4.0mm左右。 間的間隔距離可設定為 【0037】 持的22以受到基板62支 22具備處理容器64，該處mu?；：侧上方。該處理單元 頂部的石英製圓筒體所構成的/且理&部形成開口且形成有 筒狀的加熱H 66,該加_ 66 &早_圍設置有圓 在域理容n 64 __環境，的晶圓加熱。 ❹ ❺職σ，或設置在容n·卩的排細進彳！底面侧壁上 在例如〜 ®溫度最大約 驅動而能夠上昇或下降的罩蓋7广二那樣文到承载部昇降機構68 2裝载到該處理容器64 里容器64下端開口 Γ〇3ΐ 口部以氣密方式封閉起來。 會將處理容器 f 滑行的方_ 部 ’其可在上述兩承載部旋轉的承載部移載 承=r48,之二;=17〇之間以及 13 200952113 然後，在該被處理體移載區域10内部的一侧上，設置有一對 高性能的過濾器76 (參照圖2以及圖3)，該過濾器76朝水平方 向吹出清淨空氣或Ν2氣體等非活性氣體，以經常形成清淨氣體的 侧流78。藉此，便能夠保持該被處理體移載區域1〇内部的清淨， 同時冷卻該氣體環境溫度。又，在上述過濾器76設置面的對向面 上，設置有氣體吸入口 80 ’在此吸入之上述侧流78，透過設置在 底部的導管82 (請亦參照圖4)等構件回到上述過濾器76該侧， 一部份被循環使用。 【0041】 Ο 在此就作為本發明技術特徵的被處理體移載機構52詳細 明，如前所述，該移載機構52主要具備：昇降台56，其受昇降 構54驅動而能夠朝上下方向昇降；又狀機構58，其可朝水 前進、後退以及旋轉；以及離子產生機構6〇，其可產 ^ 靜電的離子。 姚In the processing station 20, in the compartment i 12 which partitions the two areas 8, 10, there is provided only the opening and closing cover 6A of the cassette 6 to be placed in the opening box. On the side of the transport area 8, the mounting table 38 is slid in a horizontal position, and can be placed thereon. Moreover, the actuator 40 is provided on the two sides of the set ,3, and the side of the partition wall 12 on the mounting table 38 can be placed on the side of the partition wall 12, and the opening and closing cover 6A = port 36 of the cassette 6 can be opened. In the state of the opening, the opening edge of the yoke portion of the accommodating case 6 is brought into close contact with the opening edge of the partition wall 12 = the port 36. Further, the actuator 4A may be placed so as to be pressed from above to receive the cassette 6 and fixed. [0032] The opening/closing door 42 of the opening 36 of the opening 36 of the opening 36 is disposed on the side of the object (the side of the sea), and the opening and closing door 42 capable of opening or closing the opening 36 is provided in the direction of the building/month. 42 can also be arranged to slide in a two-dimensional manner in the up and down direction. Further, '11 200952113^Open and close the shutter 42 to open or close the cover opening and closing mechanism 44 of the six-eighth of the box 6 (see Fig. 2). [0033] Then, in the accommodating cassette transporting area 8, a standby stencil carrying arm portion 46 for accommodating the E-box 6 is placed in the vicinity of the opening 36, and the box transporting unit 34 is received and stored next. The wafer buffer of the domain is concealed, and the storage cassette 6 is moved to the transfer processing table 20 after being in standby. Further, there is also a case where the standby cassette transporting arm portion 46 is not provided. At this time, the above-described g cartridge transporting arm portion 34 directly displaces the storage cassette 6 onto the transfer processing table 2A. [0034] On the other hand, in the above-described object transfer region 1A, There are two carrier mounting stages for mounting the crystals, the carrier portion 18, that is, there is a transfer The load-bearing portion mounting table 48 and the standby load-bearing portion mounting table 5 are disposed. The transfer-side load-bearing portion mounting table 48 and the transfer processing table 2 are covered by the two load-bearing portion mounting tables 48. There is a subject transfer mechanism 52. The transfer mechanism 52 mainly includes an elevating table 56 that is driven by the elevating mechanism 54 to move up and down. The fork mechanism 58 can be moved forward and backward in the horizontal direction. And a rotation generating unit 60 that generates ions capable of removing static electricity. Further, the configuration of the transfer mechanism 52 will be described in detail later. [0035] Therefore, if the fork mechanism for driving the transfer mechanism 52 is driven 5S, the wafer loading portion 18 is placed between the wafer carrying portions 18 on the e-boxes of the 38-seat e-boxes, and the wafers are placed on the mounting pads 48. Here, a plurality of wafer carriers 18 can be disposed. For example, when the wafer carrier 18A and the wafer are provided in a total of two, it is also possible to provide only one or three or more wafers 1 J η 'Y, and when one wafer carrier 18 is provided, the carrier is not provided. The σ is placed on the wafer carrying portion of the cover to be described later. 36] The entire wafer carrier 18 is made of a heat-resistant material, for example, six pillars made of quartz. It is formed at an equal interval of 12 200952113, for example, about 4.0 mm. The interval between the two can be set to [0037] 22 The substrate 62 is provided with a processing container 64, which is on the upper side of the chamber. The quartz cylinder formed on the top of the processing unit is formed with an opening and formed with a cylindrical heating H 66. Add _ 66 & early _ set with a circle in the field to n n __ environment, the wafer is heated. ❺ ❺ σ σ, or set in the capacity of n 卩 排 彳 彳! On the side wall of the bottom surface, for example, the cover 7 which is driven at the most temperature and can be raised or lowered is widened, and the load-elevating mechanism 68 2 is loaded into the processing container 64 to open the lower end of the container 64. The airtight method is closed. The _ portion of the processing container f is slidable. The load bearing portion that can rotate on the two bearing portions can be transferred to the bearing portion = r48, two; = 17 以及 and 13 200952113. Then, in the processed object transfer region 10 On the inner side, a pair of high-performance filters 76 (see Figs. 2 and 3) are provided. The filter 76 blows inactive gas such as clean air or helium 2 gas in the horizontal direction to form a side stream of clean gas frequently. 78. Thereby, it is possible to keep the inside of the object transfer region 1〇 clean while cooling the gas ambient temperature. Further, on the opposite surface of the installation surface of the filter 76, the side flow 78 sucked by the gas suction port 80' is transmitted through the member 82 (see also FIG. 4) provided at the bottom to return to the above. One side of the filter 76 is recycled. [0041] Here, the object transfer mechanism 52 which is a feature of the present invention is described in detail. As described above, the transfer mechanism 52 mainly includes a lift table 56 which is driven by the lift mechanism 54 and can be moved up and down. The direction is raised and lowered; the mechanism 58 is capable of advancing, retreating, and rotating toward the water; and the ion generating mechanism 6〇, which can generate electrostatic ions. Yao
[0042J f體而S，如圖1以及圖5所示的，上述昇降機構54 ^ t的=螺桿，構成’且沿著該滾珠螺桿86 Θ 或逆向旋轉，藉此沿著上述引導軌88 Ϊΐί 動。然後，該昇降台56具備朝水平方向延伸的 ^ 圖5 )，叉狀機構58安裝在該臂部9〇上。裝# 9〇 (參照 【0043】 上述叉狀機構58主要係由長方體形狀的旋 叉本體94所構成。該旋轉台92設置在上述安震複^ 以箭頭91所示的方式旋轉，該叉本體94 ^ ^ ^匕夠[0042J f body and S, as shown in Figures 1 and 5, the above-mentioned lifting mechanism 54 ^ t = screw, constitutes 'and along the ball screw 86 Θ or reverse rotation, thereby along the above-mentioned guide rail 88 Ϊΐ move. Then, the elevating table 56 is provided to extend in the horizontal direction (Fig. 5), and the fork mechanism 58 is attached to the arm portion 9''. Mounting #9〇 (Refer to [0043] The fork mechanism 58 is mainly composed of a spiral body 94 having a rectangular parallelepiped shape. The rotating table 92 is disposed in the manner shown by an arrow 91, and the fork body is rotated. 94 ^ ^ ^匕 enough
能夠前進以及後退。如圖6所示的，在此台， 94C、94D、94E以沿上下方向間_等距‘方 = 94A 呈分^4Γ分別在各又本體94A〜94E上载置Λ : 然後’上述各叉本體94人〜_的基端部受到滑動部％的支 200952113 持，使該滑動部96如箭頭97 (參照圖5)所示的朝上述旋轉台92 長邊方向在返滑行移動’便能夠如上所述的讓上述又本體94A〜 94E前進或後退。又’上述叉本體94的支數並不限於$支，可以 更多或更少。 【0045】 上述離子產生機構60設置在上述叉狀機構58的上述旋轉台 92上。具體而言’該離子產生機構6〇係由例如電離器所構成，如 圖5所示的，在上述長方體形狀的旋轉台92兩侧分別設置有離子 產生機構60。又，在此係設置2台離子產生機構6〇，惟若只設置 1台也是可以。該離子產生機構6〇,如圖7 (A)所示的，主^是 Ο 分別由離子產生器98、從該離子產生器98延伸而出的離子流路 loy以及連接該離子流路100前端部的離子吹出喷嘴1〇2所構成。 然後’在上述離子產生器98上設置有供應載體氣體的載體氣體供 給機構104。 〃 【0046】 脚載體氣體供給機構104，係由途中插設著開閉㈤觸的載 1G8所構成’赠端部該側分出2條分叉路徑連接上述 ，應紐氣體。該__，在此係使用例 Ϊ氣ίΐ 為限，亦可使用&、取等稀有氣體。該 ❹料’可使關如觸可紐且呈職狀的不 鐵鼠龍（商品名）製的氣體管、陶莞製管等，且設置足 夠的長度’使其能夠追隨上述叉狀機構5 【0047】 針（ΐΐί離Ϊ %内建了複數支習知的正放電針與負放電 針（未跛圖不）’可產生正離子與負離子。在此 器’無論使用哪個種類的電離器都可以，例如，可同 流產生正離子與負離子的_ De _ 離子與負離子的AC式橫停型電離=速輪抓產生 與負離子的軟X射線讎照射X射線以產生正離子 15 2〇〇952i13 【0048】 、在此可讓所產生的正離子與負離子與上述載體氣體一起在上 ，離子流路100内流動移送。·該離子流路100，係由例如不銹鋼 1、鐵氟龍（商品名）製、陶瓷製等材質的管路所構成，宜使用 ，緣材質構成，以儘可能讓上述所產生的兩種離子不會在其内部 j滅。又，上述兩種離子的吹出喷嘴102，分別安裝固定在上述旋 轉台92的前端部上，同時輸送上述離子與載體氣體，並讓上述離 子因應需要如箭頭110 (參照圖5以及圖6)所示的向前方吹送出 去。 【0049】Ability to move forward and back. As shown in Fig. 6, at this stage, 94C, 94D, and 94E are placed on each of the main bodies 94A to 94E in the up-and-down direction _ equidistance 'square = 94A, respectively, and then placed on each of the main bodies 94A to 94E: The base end portion of 94 to _ is held by the branch portion 200952113 of the sliding portion, and the sliding portion 96 is moved back and forth in the longitudinal direction of the rotating table 92 as indicated by an arrow 97 (see Fig. 5). The above-mentioned further bodies 94A to 94E are advanced or retracted. Further, the number of the fork body 94 is not limited to $, and may be more or less. The ion generating mechanism 60 is provided on the rotating table 92 of the fork mechanism 58. Specifically, the ion generating mechanism 6 is composed of, for example, an ionizer. As shown in Fig. 5, an ion generating mechanism 60 is provided on each of both sides of the rectangular parallelepiped rotating table 92. Further, two ion generating mechanisms 6 are provided here, but only one unit may be provided. The ion generating mechanism 6A, as shown in Fig. 7(A), is mainly composed of an ion generator 98, an ion flow path extending from the ion generator 98, and a front end connecting the ion channel 100. The ion blowing nozzle 1 〇 2 is formed. Then, a carrier gas supply mechanism 104 for supplying a carrier gas is disposed on the ion generator 98 described above.脚 [0046] The foot carrier gas supply mechanism 104 is composed of a load 1G8 in which an opening and closing (five) touch is inserted in the middle. The side of the gift end portion is branched by two bifurcation paths to connect the above-mentioned gas. The __, in this case, is limited to the use of Ϊ ΐ , , , , , , , , , , , , , , , , , , , , The dip material can be used to make a gas tube made of a non-iron rat (trade name), such as a non-iron rat (trade name), and is provided with a sufficient length to enable it to follow the fork mechanism 5 [0047] The needle (ΐΐί从Ϊ% built in a number of conventional positive and negative discharge needles (not shown) can produce positive ions and negative ions. In this device' no matter which type of ionizer is used For example, AC-type transverse stop type ionization of _De_ ions and negative ions which can generate positive ions and negative ions in the same direction = fast-wheel capture and soft X-ray irradiation of negative ions to generate X-rays to generate positive ions 15 2〇〇952i13 [0048] Here, the generated positive ions and negative ions can be transported together with the carrier gas in the ion channel 100. The ion channel 100 is made of, for example, stainless steel 1 and Teflon (trade name). a pipe made of a material such as a ceramic or a ceramic material, preferably used, and made of a material of a rim, so as to prevent the two kinds of ions generated as described above from being extinguished in the interior thereof. Further, the two kinds of ions are blown out of the nozzle 102, Separately mounted to the above rotation The front end portion 92, while transporting the ions and carrier gas ions and make it available as needed in response to the arrow 110 (see FIG. 5 and FIG. 6) to blow out forward. [0049]
又，如圖2以及圖7 (A)所示的，在上述離子吹送範圍内， $即’在被處理體移載區域1〇内，設置有帶電量偵測感應器112， μ帶電量偵測感應器112的偵測値，會被輸入到例如由電腦等構 件所組成的離子用控制部114。然後，從該離子用控制部114送出 ，的的控制信號，會輸入到上述離子產生機構6〇該侧，具體而言 疋輸入到離子產生器98與開閉閥106該侧，並根據上述帶電量债 測感應器112的偵測値控制該離子產生機構6〇的動作。又，亦可 不*又置上述帶電量偵測感應器112’而在處理系統運作中讓上述離 子產生機構60經常保持運作以不斷吹送出離子。 【0050】 、然後」該處理系統2整體的動作控制，例如在收容匣盒運 =域8内送入及送出收容!^盒6的操作、在被處理體移載^域比 的？載操作、晶圓承載部18的移載操作、晶圓承載部 18的昇_作、處理料22的熱處理操作（成膜處理等）等 由例如電腦所組成的系統控制部120 (參照 '、 ^ 114 120 ^ t可Γ二 ==二;3用控制部114所需要的程i 所讀取）儲存在錄媒體22中^該記錄媒體122係 由例^碟、CD (c〇mpactDisc)、硬碟或快閃記憶體等所構成。 200952113 首先接ΐ被處理系統2，作進行説明。 圓表面附著自然氧化膜‘如以挪活性乳體環境以防止晶 成Κ氣體環境。然後、，在收丄流％ (參照圖3 )形 的降流以維持清淨空氣^氣體=私區域8内部形成清淨空氣 【0052】 盒運仏説明，在瞻 ❹ 6A朝向g盒送出送入口 2目=^收今Ea 6 ’以其開閉蓋 然後，載置著收盒；外侧载置台26 讓該滑行板28前進，以將收容$ 口 f上設有滑行板28 域8内部。 H 6移送到上述收容IE盒運送區 【0053】 上的述滑行板烈 到上方暫存部16的棚台30的既定運送 ❹ 【0054】 然後，當移載處理台20的載置‘从a 收容匿盒6移載到移載處理台2()的 38上已經載置著其他收容匣各沾卩主你 0上又备载置台 部46挾持E盒運送臂部34^的收容送臂 36附近待機，後，讓載置台38上的並6 口 40推壓收雜盒6,將其固定在載mi8侧的水平致動器 【0055】 在s亥狀態下，驅動蓋開閉機構44 (參昭 酬間門42與收容S盒6的開閉蓋6A打開，例)如^3= 17 200952113 行移動而退避打開。然後，驅動本發明之被處理體移載機構 W，將收容在收容匣盒6内的晶以一次5片的方式取出，並 將其移載到設置在移載用承載部載置台48上的晶圓承載部18上。 【0056】 此時，晶圓承載部18的晶圓收容片數為75片，若收容匣盒ό ^的曰a圓收容片數為25片，便從3個收容匣盒6内取出並移載晶 H固批次的處理。在此當上述被處理體移載機構52的驅 放後’設置在其上的離子產生機構60也會被驅動而開始釋 Ο ❹ 【0057】 若晶圓w移載到上述晶圓承載部18完 ^載74，將娜糊稀賴置自48上的晶圓承載 邛18移載至下降到最下端的罩蓋7〇上。在此，合 成並卸載之晶圓的晶圓承載部18在上述罩蓋7〇^時/用、二 ，機構74 該晶圓承載部18移到待機用承載部载 【0058】 上的處理晶圓的晶圓承載部18移載到罩蓋7〇 以及載置承載部昇降機構68，使晶圓承载部18 部18送人處理單元22的處理容器科^ j = j承載 裝載。然後，該罩蓋7〇會將虛琿六 以下鳊開口邛導入並 在該狀態下64的下綱口部密封起來， 成膜處理錄化触處㈣、f W物蚊的熱處理，例如 相反的逆便進行與前述過程 載開始而晶圓承餅18開始降下= 18 200952113Further, as shown in FIG. 2 and FIG. 7(A), in the ion blowing range, $ is 'in the object transfer area 1〇, a charge detecting sensor 112 is provided, and the μ-charge detector is provided. The detection 値 of the sensor 112 is input to an ion control unit 114 composed of, for example, a computer or the like. Then, the control signal sent from the ion control unit 114 is input to the side of the ion generating mechanism 6, specifically, to the side of the ion generator 98 and the on-off valve 106, and based on the above-mentioned charge amount. The detection of the debt sensor 112 controls the action of the ion generating mechanism 6A. Alternatively, the charge detecting sensor 112' may be disposed without the above-described charge detecting sensor 112' to keep the ion generating mechanism 60 constantly operated to continuously blow out ions during operation of the processing system. [0050] Then, the operation control of the entire processing system 2 is performed, for example, in the storage box area 8 and the operation of the cassette 6 is carried out, and the operation of the cassette 6 is carried out in the object to be processed. The system control unit 120 composed of, for example, a computer, such as a load operation, a transfer operation of the wafer carrier 18, a lift of the wafer carrier 18, a heat treatment operation of the processing material 22 (film formation process, etc.) (refer to ', ^ 114 120 ^ t can be two == two; 3 is read by the process i required by the control unit 114) is stored in the recording medium 22. The recording medium 122 is composed of a CD, a CD (c〇mpactDisc), A hard disk or a flash memory. 200952113 First, the system to be processed 2 is connected for explanation. A natural oxide film adheres to the round surface, such as the active emulsion environment to prevent the formation of a gas atmosphere. Then, in the turbulent flow % (refer to Figure 3)-shaped downflow to maintain the clean air ^ gas = private area 8 to form a clean air [0052] box operation instructions, in the ❹ 6 6A toward the g box to send the delivery 2目^^收收Ea 6' is opened and closed by the cover, and then the cassette is placed; the outer stage 26 advances the slide board 28 to provide the inside of the area 8 of the slide board 28 on the accommodation port f. H 6 is transferred to the predetermined transport port of the shed 30 which is placed on the above-mentioned IE box transport area [0053] to the upper temporary storage unit 16 [0054] Then, when the transfer processing table 20 is placed 'from a The storage box 6 is transferred to the transfer processing table 2 () 38 and has been placed on the other storage trays, each of which is attached to the main unit, and the storage tray 36 is held by the E-box transport arm portion 34^. Standby nearby, after that, the 6-port 40 on the mounting table 38 pushes the receiving box 6 and fixes it to the horizontal actuator on the mi8 side [0055]. In the s-sea state, the cover opening and closing mechanism 44 is driven. The opening and closing door 42 and the opening and closing cover 6A for accommodating the S box 6 are opened, for example, as ^3=17 200952113, the line moves to retreat. Then, the object transfer mechanism W of the present invention is driven, and the crystals accommodated in the cassette 6 are taken out at a time, and transferred to the transfer carrier mounting table 48. On the wafer carrier 18. [0056] At this time, the number of wafers accommodated in the wafer carrier 18 is 75, and if the number of the accommodating pockets of the cassette ό is 25, it is taken out from the three cassettes 6 and moved. Treatment of the carrier crystal H solid batch. Here, after the above-described object transfer mechanism 52 is driven, the ion generating mechanism 60 disposed thereon is also driven to start releasing. [0057] If the wafer w is transferred to the wafer carrier 18 After the loading 74, the wafer carrier 邛18 placed on the bottom of the wafer is transferred to the lowermost cover 7〇. Here, the wafer carrier portion 18 of the synthesized and unloaded wafer is moved to the processing unit on the standby carrier portion [0058] at the time of the above-mentioned cover 7/using, and the mechanism 74. The wafer carrier 18 is transferred to the cover 7 and the carrier lift mechanism 68, and the wafer carrier 18 is fed to the processing container of the processing unit 22 for loading. Then, the cover 7〇 will introduce the 鳊 珲 鳊 鳊 并 并 并 并 并 并 并 并 并 并 并 密封 密封 密封 密封 密封 密封 密封 密封 密封 , 密封 密封 密封 密封 密封 , , 热处理 热处理 热处理 热处理 热处理 热处理 热处理 热处理 热处理 热处理 热处理 热处理 热处理 热处理The process begins with the aforementioned process and the wafer carrier 18 begins to drop = 18 200952113
環:竟雖然是南溫狀態，但會被上述側流％ (參照圖3〕所冷卻。 ft來的晶圓承載部18會被承載部移載機構74經由待 ΐϋΐίίί台5G或不經由待機用承載部載置台5G直接移載 會冷卻到-ίϊϊ置台48上。此期間上述已處理完成的晶圓W 【0060】 %蔣處理體移載機構52的昇降機構54以及叉狀機構 的葡的晶從晶圓承載部18移載到移載處理台20 、 口 的二收各匣盒6内。在該情況下，也會驅動設置在 ❹ 機f52亡的離子產生機構60釋放離子：已處 到開口日3曰6 h i載到，收容11盒6内之後，將開閉閘門42裝設 的開閉蓋麵圖2)，將保持在其上 【0061】 收容ΪΪ δ 送區域8内的£盒運送臂部34，將該 域各送出逆暫存部16，或是不經過存放的過程，而經 u送 運送到處理系統2之外。在該匣各運送臂邱 收容Ε盒叙晶目的收容Ε盒6躺，已經挾持著空 〇 容H盒6設置在載置46 ’會將該空收 容ϋ盒6内。 上’讓已經處理好的晶圓繼續收容到收 [0062] 處理=成用Γί如然後，1個批次的晶圓的 承載部載置台48上的晶圓“部用 200952113 m标的，被處理體移載機構52的昇降機構54讓昇降台56 叉狀機構58的旋轉台92，在從昇降台56延伸出來 的女裝90上因應需要旋轉移動，再者走 =6，移動，5支叉本體94A〜_也走 動 籍此，便此以各又本體94A〜94E支撐或移載晶 [0064] 1移載晶圓W之後，晶圓W本體、收容晶圓W的收 ΤΈ/^ 3支持曰曰圓w的晶圓承載部18會因為靜電而有帶電的 4::)鹿因t各種原因’存在於該被處理體移載區域10内的少 许粒子（塵粒）也會因為靜電而有帶電的傾向。 〇 【0065】 本發日种，由於在上蚊雜構58上設置離子產生 該離子產生機構6G釋放出正離子與負離子，故能 杨電處所或漂浮著的帶電粒子，以防止粒子附著在晶圓 【0066】 叭如圖7 (A)所示的，離子產生機構60的離子產生器 動正離子與負離子，伴隨載體氣體在離子流路100内流 該離離子吹出喷嘴ig2向前方不斷釋放出去。 ο 喷觜會因為上述晶圓w的移載操作而昇降移動、 ΐ釋放=峨移動，故會對該叉狀機構58移動的所有範 【0067】 心ΐ如在u圖4中’顯示出叉狀機構58朝向左右相反側的狀能， 機構58會在移動過的所有路徑上釋放出離子。如i， 上^靜^。去除上述有帶電傾向之收容E盒6以及晶81承載部18 【0068】 i由於對被處理體移載區域1G廣範圍地釋放離子，故W 有效也去除掉舰勒的帶電漂浮粒子的靜電。此時，由於離= 20 200952113 產生器60只有1台或2台左右’故設備成本非常少，用少數台的 離子產生機構60就在寬廣的範圍内釋放離子。 口 【0069】 一 又，該被處理體移載區域10内的帶電狀況，如圖7 (Α)所 示的，由帶電量偵測感應器112不斷偵測，當該偵測値低於既定 値時’上述離子用控制部114便停止離子產生器98的動作，'以防 止載體氣體等資源無端被消耗掉。 【0070】 Ο 像這樣，由於在收容有作為被處理體的例如半導體晶圓的收 容匣盒6與裝載以及卸載到處理容器64内作為被處理體保持機構 的晶圓承載部18之間進行被處理體移載動作的移載機構，在載 巧移動被處理體的叉狀機構58上設置有離子產生機構6〇以去 靜電’故用少數台的離子產生機構60就能去除掉在例如被處理體 移載的寬廣範圍内的帶電處所以及漂浮帶電塵粒的靜電。 又，在上述實施態樣中，係以在旋轉台92兩側設置2 Α 3機，60的情況作為實施例進行言兑明，惟並非以此為限: s 的只設置1台離子產生機構⑹，並讓從該離乙 〇 出，離子流路卿在途中分成2條，然後在各分ί 域二要㈣刖端部上設置離子吹出喷嘴ι〇2。若是這樣，便炉 盘‘台離-子產生器98 ’降低備成本。又，在圖7⑻中， 【:】所示相同構造的部位’附上相同畔照符號。 <變化實施態樣> 明。被處理體運送機構的變化實施態樣進行説 生機構60的一部或全部安努在太，為限’亦可將離子產 被處理體運送機n® ’ 示本發明之被處理體運送機構的一個、===俯=係; 200952113 顯示沿圖8中的A-A線的端視概略剖面圖。又，在圖8以及圖9 中’與圖5中的構成要件相同者，會附上相同的參照符號。 【0073】 一般而言，如圖8以及圖9所示的，叉狀機構58，除了保持 晶圓W的叉本體94A〜94E以外，有時也會設置附感應器的叉本 體94X’該感應器能夠偵測晶圓在晶圓承載部18或收容匣盒6内 的收容位置。 【0074】 該附感應器的又本體94X ’跟其他叉本體94A〜94E同樣，可 前進以及後退，前端侧呈分叉狀。然後，在該分叉狀的前端部上， © 設置有γ偵測有無晶圓W的光感應器130。該光感應器130,係 由發光器130A與受光器i3〇B所構成’該發光器13〇A設置在分 叉狀的前端部的一端上，由發光二極體或雷射元件等構件所組 成，可發出檢測光L ;該受光器130B設置在另一個前端部上，在 讓該附感應器的又本體94X前進的狀態下，在相當於晶圓w邊緣 的處所朝上下方向掃描移動’偵測有無晶圓，以及其位置。又， 可以用該附感應器的叉本體94X運送晶圓W，自不待言。 [0075] 然後’在該變化實施態樣中，在上述附感應器的叉本體94X 的兩侧，分別設置有上述離子產生機構6〇。具體而言，2台離子 產生機構60的各離子吹出喷嘴102分別安裝在上述附感應器的叉 本體94X的分又狀的前端部上。又，在此將各離子產生器98安裝 在滑動部96的兩侧。在該情況下，讓上述附感應器的叉本體94X 前進’在讓上述離子吹出喷嘴102更接近上述晶圓w、晶圓承載 部18或收容匣盒6的狀態下吹出離子，以更有效地去除帶電處所 等的靜電。又’在該情況下，也可以如圖7 (B)所示的只設置1 台離子產生器98，自不待言。 【0076】 又’在上述各實施態樣中，離子吹出喷嘴102吹出離子的方 向’是設定成朝前方直線吹出，惟並非以此為限’如圖1〇所示的， 22 200952113 亦可在離子吹出噴嘴102的前端部上，設置讓離子畋屮方命 的擴散頭132。兮撼㈣η? π古、^置獅子欠出方向擴散 亥擴散頭132 S又有複數的吹出孔132Α，讓離子除 G域Ϊ圍中向斜前方擴散，如是便可將離子吹送到前方寬廣 【0077】 外罟兮圖示’惟亦可在該離子吹出喷嘴102的前端部上 改魏子的吹心向。又在上祕實施態樣 明，“用載體氣體的離子產生機構60作為實施例進行説 體氣體的為限’不使賴體氣體也是可以。在不使用該載 ❹ 山土月/ ，可讓所產生的離子伴隨侧流78 (參照圖3)擴 散出去。 、 【0078】 上的各實施態射，主要是以讓離子產生器98與離 ίίΐΐί?:曰分離而兩者透過離子流路100連結(參照圖7)的 機二盆㈣此為限’亦可如圖11所示的離子產生 ΐ ί〇=ΐί態樣那樣，使用離子產生器98與離子吹出喷 ^女IIP γ Ί # 口的離子產生機構。吾人可使用例如^^YENCE股 2 = 微除電器隨〇20系歹1J (商品名）等產品，作 ❹ ί 又’在該情況下’也有使用載體氣體的態 ㈣的祕’在圖11中，是圖示出使用載體氣 體的態樣。 【0079】 又在此被處理體係以半導體晶圓為例進行説明，惟該半導 體晶圓亦包含石夕基板或GaAs、SiC、⑽等化 且亦不限於該等基板而已，用於液晶顯 基板等被處_亦可_本發明。展置的玻璃基板或陶是 【圖式簡單說明】 政接ΐi係顯*本發明之被處理體的處料、統的―實施態樣之概 略構造圖。 23 200952113 二5俯_ ’顯示設置有本發明之被處理體移載機構的 Ά 載區域内的各構成要件的排列位置的一個實施例。 圖3係—立體圖’顯示被處理體移載區域内的清淨氣體的流 動0 、一立體圖’顯示被處理體移載區域内的各構成要件的 排列位置，、移載機構的動作狀況的-個實施例。 放大立體圖’顯示具備離子產錄制移載機構。 @ 7/、、一侧視圖，顯示移載機構的又狀機構。Ring: Although it is in the south temperature state, it will be cooled by the above-mentioned side stream % (refer to Fig. 3). The wafer carrier 18 of the ft will be carried by the carrier transfer mechanism 74 via the standby 5G or not via standby. The load-bearing portion mounting table 5G is directly transferred and cooled to the mounting table 48. During this period, the wafer W that has been processed is processed. [0060] The lifting mechanism 54 of the Jiang processing body transfer mechanism 52 and the crystal of the fork mechanism It is transferred from the wafer carrier 18 to the transfer processing table 20 and the two ports of the port. In this case, the ion generating mechanism 60 provided in the machine f52 is also driven to release ions: The opening and closing day 3曰6 hi is carried, and after the 11-box 6 is accommodated, the opening and closing cover surface of the opening and closing gate 42 is shown in Fig. 2), and the box carrying arm held in the [0061] housing δ δ feeding area 8 is held thereon. The unit 34 sends the fields out of the reverse temporary storage unit 16, or carries them out of the processing system 2 via the u delivery process. In this magazine, the storage cassettes 6 are placed in the storage box, and the storage cassette 6 is placed, and the empty cassette H is placed on the mounting box 46' to place the empty cassette 6 therein. On the above, let the processed wafers continue to be accommodated and received. [0062] Processing = Γ 如 For example, the wafer "on the wafer carrier portion of the wafer of one batch of wafers" is marked with 200952113 m, and is processed. The lifting mechanism 54 of the body transfer mechanism 52 allows the rotary table 92 of the fork mechanism 56 of the lifting platform 56 to be rotated in rotation on the women's clothing 90 extending from the lifting platform 56, and then move = 6 and move, 5 forks The main body 94A~_ also moves, so that the main body 94A~94E supports or transfers the crystal [0064]. After the transfer of the wafer W, the wafer W body and the receiving wafer W receive/support. The wafer carrier 18 of the circle w is charged by the static electricity 4::) deer. For a variety of reasons, a small amount of particles (dust particles) present in the substrate transfer region 10 may also be due to static electricity. There is a tendency to electrify. 〇【0065】 In this Japanese version, since the ions are generated on the upper mosquito structure 58, the ion generating mechanism 6G releases positive ions and negative ions, so that the charged particles in the Yang electric space or floating can be Prevent particles from adhering to the wafer [0066] as shown in Figure 7 (A), the ion generating mechanism 60 is away The generator moves the positive ions and the negative ions, and the carrier gas continuously flows out in the ion flow path 100 to the front of the ion blowing nozzle ig2. ο The sneezing moves up and down due to the transfer operation of the wafer w, and the ΐ discharge =峨 moves, so all the movements of the fork mechanism 58 [0067], as shown in Fig. 4, 'shows the shape of the fork mechanism 58 toward the left and right opposite sides, and all the paths that the mechanism 58 will move. The ions are released on the upper side, such as i, the upper part is static, and the above-mentioned charged E-box 6 and the crystal 81 carrying portion 18 are removed. [0068] Since a large range of ions are released to the processed object transfer area 1G, W It also effectively removes the static electricity of the charged floating particles of the squad. At this time, since there is only one or two generators 60 from the = 20 200952113, the equipment cost is very small, and a small number of ion generating mechanisms 60 are widely used. The ion is released in the range. [0069] Again, the charged condition in the object transfer area 10 is continuously detected by the charge detecting sensor 112 as shown in FIG. 7 (Α), when the detect When the test is lower than the established ' The ion control unit 114 stops the operation of the ion generator 98, and prevents the resource such as the carrier gas from being consumed. [0070] 像 In this case, a storage cassette such as a semiconductor wafer is stored as a target object. 6: a transfer mechanism that performs a transfer operation of the object to be processed between the wafer carrier 18 that is loaded and unloaded into the processing container 64 as the object holding mechanism, and is provided on the fork mechanism 58 that moves the object to be processed. The ion generating mechanism 6 is configured to remove static electricity, so that a small number of ion generating mechanisms 60 can remove static electricity from, for example, a charged space within a wide range of the object to be processed and floating floating dust particles. Further, in the above-described embodiment, the case where two Α 3 machines, 60 are provided on both sides of the rotary table 92 is exemplified as an embodiment, but it is not limited thereto: only one ion generating mechanism is provided for s (6), and let the ion streamer divide into two on the way, and then set the ion blowing nozzle ι2 on the end of each of the two (4) ends. If this is the case, the tray "Taiwan-Sub-Generator 98" reduces the cost of the backup. Further, in Fig. 7 (8), the portion of the same structure shown in [:] is attached with the same banknote symbol. <Change implementation aspect> In the embodiment of the change in the object transport mechanism, one or all of the health-care mechanism 60 can be used, and the ion transport target transporter n® can also be used as the target transport mechanism of the present invention. One, ===down=system; 200952113 shows a schematic cross-sectional view along the line AA in Fig. 8. In addition, in FIGS. 8 and 9, the same reference numerals are attached to the same components as those in FIG. 5. [0073] In general, as shown in FIGS. 8 and 9, the fork mechanism 58 may be provided with a fork body 94X' of the sensor in addition to the fork bodies 94A to 94E holding the wafer W. The device can detect the storage position of the wafer in the wafer carrying portion 18 or the receiving cassette 6. The body 94X' of the sensor can be advanced and retracted like the other fork bodies 94A to 94E, and the front end side is bifurcated. Then, on the forked front end portion, © is provided with a light sensor 130 for detecting the presence or absence of the wafer W. The light sensor 130 is composed of an illuminator 130A and a light receiver i3〇B. The illuminator 13A is disposed on one end of the forked front end portion, and is composed of a light emitting diode or a laser element. The composition emits the detection light L; the photodetector 130B is disposed on the other front end portion, and in the state where the further body 94X of the sensor is advanced, the scanning movement is performed in the up and down direction at a position corresponding to the edge of the wafer w. Detect the presence or absence of wafers and their location. Further, the wafer W can be carried by the fork body 94X of the sensor, and it goes without saying. Then, in the variation embodiment, the ion generating mechanism 6A described above is provided on both sides of the fork main body 94X of the above-described inductor. Specifically, each of the ion blowing nozzles 102 of the two ion generating mechanisms 60 is attached to the distal end portion of the fork main body 94X of the inductor. Further, each ion generator 98 is attached to both sides of the sliding portion 96. In this case, the fork main body 94X of the inductor is advanced to eject ions in a state where the ion blowing nozzle 102 is brought closer to the wafer w, the wafer carrier 18, or the cassette 6 to more efficiently Remove static electricity from charged spaces. Further, in this case, it is also possible to provide only one ion generator 98 as shown in Fig. 7(B), and it goes without saying. [0076] Further, in each of the above embodiments, the direction in which the ion blowing nozzle 102 blows ions is set to be blown straight ahead, but not limited thereto, as shown in FIG. 1A, 22 200952113 A diffusion head 132 for arranging ions is provided on the front end portion of the ion blowing nozzle 102.兮撼(4)η? π古、^ The lion owes the direction of diffusion. The diffusion head 132 S has a plurality of blow holes 132Α, allowing the ions to diffuse forward in the G-domain, and then the ions can be blown to the front. 0077] The outer cymbal diagram 'but only the tip end of the ion blowing nozzle 102 can be changed to the blowing direction of the Weizi. Further, in the above-mentioned embodiment, "the ion generating means 60 using the carrier gas is used as an example to limit the body gas", and it is also possible to prevent the gas from being used. The generated ions are diffused out along with the side stream 78 (refer to FIG. 3). The various implementations of the method are mainly to separate the ion generator 98 from the ίίΐΐ 曰: 而 and both of them through the ion channel 100. Connect the machine (see Figure 7) to the second basin (4). This can also be used as shown in Figure 11. The ion generator 98 and the ion-blown spray IIP γ Ί #口 can also be used as shown in Figure 11. Ion generator mechanism. For example, we can use products such as ^^YENCE strand 2 = micro-discharger with 歹20 series 歹1J (trade name), ❹ ί and 'in this case' also have the state of using carrier gas (4) In Fig. 11, a state in which a carrier gas is used is illustrated. [0079] Here, the semiconductor system is exemplified by a semiconductor wafer, but the semiconductor wafer also includes a shi, a substrate, or GaAs or SiC. (10) Equalized and not limited to such substrates, for liquid crystal display The substrate or the like is placed in the present invention. The glass substrate or the ceramic material to be mounted is a simple description of the drawings. The structure of the object to be processed of the present invention is summarized as a schematic structure of the embodiment. Fig. 23 200952113 shows an embodiment in which the arrangement positions of the respective components in the load-bearing area of the object transfer mechanism of the present invention are arranged. Fig. 3 is a perspective view showing the transfer of the object to be processed. The flow of the clean gas in the area 0, a perspective view 'shows the arrangement position of each component in the transfer area of the object to be processed, and the operation state of the transfer mechanism. The enlarged perspective view shows the recording of the ion production. Carrier mechanism. @7/,, a side view, showing the repetitive mechanism of the transfer mechanism.
圖8ϋ)ΐ 一方塊構造圖’顯示離子產生機構的各種態樣。 化實施態樣、。賴圖’顯示本發明之被處理體運送機構的一個變 化實m、。一俯視圖’顯示本發明之被處理體運送機構的一個變 _圖ig係—立體圖，顯示設置在離子吹时嘴的前端部上的擴 圖11係顯7F離子產生機構的其他變化實施態樣之圖式。 【主要元件符號說明】 2〜被處理體的處理系統 4〜框體 6〜收容匣盒 6A〜開閉蓋部 8〜收容匣盒運送區域 10〜被處理體移載區域 12〜區隔壁 14〜送出送入埠 16〜暫存部 18、18A、18B〜晶圓承載部 20〜移載處理台 22〜處理單元 24 200952113 24〜匣盒送出送入口 26〜外侧載置台 28〜滑行板 30〜棚台 32〜昇降機台 34〜匣盒運送臂部 3 6〜開口 38〜載置台 40〜致動器 42〜開閉閘門 ^ 44〜蓋開閉機構 46〜待機用匣盒運送臂部 48〜移載用承載部載置台 50〜待機用承載部載置台 52〜被處理體移載機構 54〜昇降機構 56〜昇降台 58〜叉狀機構 60〜離子產生機構 62〜基板 ❹ 64〜處理容器 66〜加熱器 68〜承載部昇降機構 70〜罩蓋 72〜閘門 74〜承載部移載機構 76〜過遽器 78〜側流 80〜氣體吸入口 82〜導管 25 200952113 8 6〜滾珠螺桿 88〜引導執 90〜臂部 91〜箭頭 92〜旋轉台 94〜叉本體 94A至94E〜叉本體 94X〜附感應器的叉本體 96〜滑動部 97〜箭頭 〇 98〜離子產生器 100〜離子流路 102〜離子吹出喷嘴 104〜載體氣體供給機構 106〜開閉閥 108〜載體氣體管 110〜前頭 112〜帶電量偵測感應器 114〜離子用控制部 120〜系統控制部 ® 122〜記錄媒體 130〜光感應器 130A〜發光器 130B-受光器 132〜擴散頭 132A〜吹出孔 A-A〜剖面線 B-W〜晶圓 26Fig. 8A) ΐ A block configuration diagram 'shows various aspects of the ion generating mechanism. Implement the situation. The map "shows a variation of the object transport mechanism of the present invention. A top view 'shows a variation of the object transport mechanism of the present invention, a perspective view showing that the enlarged view of the front end portion of the nozzle for ion blowing is a modified embodiment of the 7F ion generating mechanism. figure. [Description of main component symbols] 2 to the processing system 4 to the frame 6 to the processing object, the storage cassette 6A, the opening/closing lid portion 8 to the storage cassette transporting region 10, the processing target transfer region 12, and the partition wall 14 to Feed 埠 16 to temporary storage unit 18, 18A, 18B to wafer carrier unit 20 to transfer processing table 22 to processing unit 24 200952113 24 to cassette delivery and delivery port 26 to outer mounting table 28 to sliding plate 30 to shed 32 to the elevator table 34 to the cassette transport arm unit 3 6 to the opening 38 to the mounting table 40 to the actuator 42 to the opening and closing gate 44 to the cover opening and closing mechanism 46 to the standby cassette transport arm portion 48 to the transfer carrying portion The mounting table 50 to the standby carrying portion mounting table 52 to the processed object transfer mechanism 54 to the elevating mechanism 56 to the elevating table 58 to the fork mechanism 60 to the ion generating mechanism 62 to the substrate ❹ 64 to the processing container 66 to the heater 68 Carrying section elevating mechanism 70 - cover 72 - gate 74 - carrying section transfer mechanism 76 - damper 78 - side stream 80 - gas suction port 82 - duct 25 200952113 8 6~ ball screw 88 ~ guide 90 ~ arm 91~arrow 92~rotating table 94~fork body 94A To 94E to fork body 94X to fork main body 96 to sensor, sliding portion 97 to arrow 〇 98 to ion generator 100 to ion flow path 102 to ion blowing nozzle 104 to carrier gas supply mechanism 106 to opening and closing valve 108 to carrier gas Tube 110 to front 112 to charge detection sensor 114 to ion control unit 120 to system control unit 122 to recording medium 130 to light sensor 130A to illuminator 130B to light receiver 132 to diffusion head 132A to blown hole AA ~ section line BW ~ wafer 26