JP6948927B2 - How to remove static electricity from board loading / unloading devices, board processing devices, and board transport containers - Google Patents

How to remove static electricity from board loading / unloading devices, board processing devices, and board transport containers Download PDF

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JP6948927B2
JP6948927B2 JP2017234476A JP2017234476A JP6948927B2 JP 6948927 B2 JP6948927 B2 JP 6948927B2 JP 2017234476 A JP2017234476 A JP 2017234476A JP 2017234476 A JP2017234476 A JP 2017234476A JP 6948927 B2 JP6948927 B2 JP 6948927B2
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carrier
transport
substrate
storage container
port
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JP2019102727A (en
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雄一 大岡
雄一 大岡
雅人 門部
雅人 門部
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to KR1020180155025A priority patent/KR102462916B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67396—Closed carriers characterised by the presence of antistatic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover

Description

本発明は、基板搬入出装置、基板処理装置及び基板搬送容器の除電方法に関する。 The present invention relates to a method for removing static electricity from a substrate loading / unloading device, a substrate processing device, and a substrate transport container.

半導体製造装置において、ＦＯＵＰ（Front Opening Unified Pod）の搬送領域のパーティクルがＦＯＵＰの蓋体を介して基板搬送領域に混入することを抑制する蓋体開閉装置が知られている（例えば、特許文献１参照）。 In a semiconductor manufacturing apparatus, there is known a lid opening / closing device that suppresses particles in a transport region of a FOUP (Front Opening Unified Pod) from being mixed into a substrate transport region via a lid of the FOUP (for example, Patent Document 1). reference).

上記の蓋体開閉装置は、蓋体の前面が開閉ドアにより開閉される搬送口を向くようにＦＯＵＰを載置する載置台と、ＦＯＵＰに対向する対向面部に設けられるガス吐出口と、載置台に載置されたＦＯＵＰを対向面部に対して相対的に進退させる進退機構とを備える。そして、ガス吐出口からＦＯＵＰの蓋体までの距離が５ｍｍ以下であるときに蓋体へパージガスを供給することにより、蓋体と対向面部との間を流れるパージガスの流速が高くなり、蓋体のパーティクルを容易に除去することが可能となる。 The lid opening / closing device includes a mounting table on which the FOUP is placed so that the front surface of the lid faces the transport port opened / closed by the opening / closing door, a gas discharge port provided on the facing surface portion facing the FOUP, and a mounting table. It is provided with an advancing / retreating mechanism for advancing / retreating the FOUP placed on the facing surface relative to the facing surface portion. Then, when the distance from the gas discharge port to the lid of the FOUP is 5 mm or less, by supplying the purge gas to the lid, the flow velocity of the purge gas flowing between the lid and the facing surface portion becomes high, and the flow velocity of the purge gas of the lid becomes high. Particles can be easily removed.

特開２０１２−２０４６４５号公報Japanese Unexamined Patent Publication No. 2012-204645

しかしながら、上記の装置では、ＦＯＵＰの内面に付着するパーティクルを除去することは困難である。ＦＯＵＰの内面に付着したパーティクルは、ＦＯＵＰに収納される基板に付着したり、ＦＯＵＰの蓋体を取り外すときに基板搬送領域に混入したりする場合がある。 However, with the above device, it is difficult to remove the particles adhering to the inner surface of the FOUP. Particles adhering to the inner surface of the FOUP may adhere to the substrate housed in the FOUP, or may be mixed in the substrate transport area when the lid of the FOUP is removed.

そこで、本発明の一態様では、ＦＯＵＰの内面を除電し、ＦＯＵＰの内面へのパーティクルの付着を抑制できる基板搬入出装置を提供することを目的とする。 Therefore, one aspect of the present invention is to provide a substrate loading / unloading device capable of eliminating static electricity on the inner surface of the FOUP and suppressing adhesion of particles to the inner surface of the FOUP.

上記目的を達成するため、本発明の一態様に係る基板搬入出装置は、基板搬送領域と容器搬送領域とを区画する隔壁と、前記隔壁に形成された搬送口と、前記搬送口の開口縁部に取り出し口の開口縁部を密着させた基板収納容器の内部に、前記搬送口の開口縁部からイオン化されたガスを吹き付けるガス供給機構と、周縁部が前記容器搬送領域の側へ向けて屈曲された屈曲部を含む箱体として形成され、前記周縁部を前記搬送口の開口縁部に密着させることで前記搬送口を閉じる開閉ドアと、前記屈曲部の下部の内面に設けられ、前記基板収納容器の内面の電位を検出する電位計と、を有する。
In order to achieve the above object, the substrate loading / unloading device according to one aspect of the present invention includes a partition partition for partitioning the substrate transport area and the container transport area, a transport port formed in the partition wall, and an opening edge of the transport port. A gas supply mechanism that blows ionized gas from the opening edge of the transport port into the inside of the substrate storage container in which the opening edge of the take-out port is brought into close contact with the portion, and the peripheral edge toward the container transport region side. It is formed as a box body including a bent bent portion, and is provided on an opening / closing door that closes the transport port by bringing the peripheral edge portion into close contact with the opening edge portion of the transport port, and on the inner surface of the lower portion of the bent portion. It has a potential meter for detecting the potential on the inner surface of the substrate storage container .

開示の基板搬入出装置によれば、ＦＯＵＰの内面を除電し、ＦＯＵＰの内面へのパーティクルの付着を抑制できる。 According to the disclosed substrate loading / unloading device, it is possible to eliminate static electricity on the inner surface of the FOUP and suppress the adhesion of particles to the inner surface of the FOUP.

本発明の実施形態に係る基板処理装置の概略構成図Schematic configuration diagram of the substrate processing apparatus according to the embodiment of the present invention. 本発明の実施形態に係る基板処理装置の概略平面図Schematic plan view of the substrate processing apparatus according to the embodiment of the present invention. キャリア及び開閉ドアの縦断面図Longitudinal section of carrier and open / close door キャリア及び開閉ドアの横断面図Cross section of carrier and open / close door 搬送口及びキャリアの斜視図Perspective view of transport port and carrier キャリアの除電方法の一例を示すフローチャートFlowchart showing an example of carrier static elimination method キャリアの除電方法の一例を示す工程図（１）Process diagram showing an example of a carrier static elimination method (1) キャリアの除電方法の一例を示す工程図（２）Process diagram showing an example of a carrier static elimination method (2) キャリアの除電方法の一例を示す工程図（３）Process diagram showing an example of a carrier static elimination method (3) キャリアの除電方法の一例を示す工程図（４）Process diagram (4) showing an example of a carrier static elimination method キャリアの除電方法の一例を示す工程図（５）Process diagram (5) showing an example of a carrier static elimination method

以下、本発明を実施するための形態について図面を参照して説明する。なお、本明細書及び図面において、実質的に同一の構成については、同一の符号を付することにより重複した説明を省く。 Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In the present specification and the drawings, substantially the same configuration is designated by the same reference numerals to omit duplicate explanations.

（基板処理装置）
本発明の実施形態に係る基板搬入出装置を備える基板処理装置について説明する。本発明の実施形態に係る基板搬入出装置は、種々の基板処理装置に適用できるが、理解の容易のために、基板処理装置の一例として縦型熱処理装置を用いた場合を例に挙げて説明する。 (Board processing equipment)
A substrate processing apparatus including a substrate loading / unloading device according to an embodiment of the present invention will be described. The substrate loading / unloading apparatus according to the embodiment of the present invention can be applied to various substrate processing apparatus, but for easy understanding, a case where a vertical heat treatment apparatus is used as an example of the substrate processing apparatus will be described as an example. do.

図１は、本発明の実施形態に係る基板処理装置の概略構成図である。図２は、本発明の実施形態に係る基板処理装置の概略平面図である。 FIG. 1 is a schematic configuration diagram of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic plan view of the substrate processing apparatus according to the embodiment of the present invention.

基板処理装置１は、装置の外装体を構成する筐体１０に収容されて構成される。筐体１０内には、キャリア搬送領域Ｓ１０とウエハ搬送領域Ｓ２０とが形成されている。キャリア搬送領域Ｓ１０とウエハ搬送領域Ｓ２０とは、隔壁１１により区画されている。隔壁１１には、キャリア搬送領域Ｓ１０とウエハ搬送領域Ｓ２０とを連通させ、ウエハＷを搬送するための搬送口１２が設けられている。搬送口１２は、ＦＩＭＳ（Front-Opening Interface Mechanical Standard）規格に従った開閉ドア５０により開閉される。開閉ドア５０には駆動機構５１が接続されており、駆動機構５１により開閉ドア５０は前後方向及び上下方向に移動自在に構成され、搬送口１２が開閉される。なお、搬送口１２及び開閉ドア５０の周囲の構成については後述する。また、以下では、キャリア搬送領域Ｓ１０及びウエハ搬送領域Ｓ２０の配列方向を基板処理装置１の前後方向とする。 The substrate processing device 1 is housed in a housing 10 that constitutes an exterior body of the device. A carrier transport region S10 and a wafer transport region S20 are formed in the housing 10. The carrier transfer area S10 and the wafer transfer area S20 are separated by a partition wall 11. The partition wall 11 is provided with a transport port 12 for communicating the carrier transport region S10 and the wafer transport region S20 and transporting the wafer W. The transport port 12 is opened and closed by the opening / closing door 50 according to the FIMS (Front-Opening Interface Mechanical Standard) standard. A drive mechanism 51 is connected to the opening / closing door 50, and the opening / closing door 50 is configured to be movable in the front-rear direction and the up-down direction by the drive mechanism 51, and the transport port 12 is opened and closed. The configuration around the transport port 12 and the opening / closing door 50 will be described later. Further, in the following, the arrangement direction of the carrier transfer area S10 and the wafer transfer area S20 will be the front-rear direction of the substrate processing apparatus 1.

キャリア搬送領域Ｓ１０は、大気雰囲気とされている。キャリア搬送領域Ｓ１０は、基板の一例である半導体ウエハ（以下「ウエハＷ」という。）が収納されたキャリア４０が、基板処理装置１に対して搬入又は搬出されるための領域である。キャリア４０は、例えばＦＯＵＰ（Front-Opening Unified Pod）であってよい。ＦＯＵＰ内の清浄度が所定のレベルに保持されることで、ウエハＷの表面への異物の付着や自然酸化膜の形成を防止できる。キャリア搬送領域Ｓ１０は、第１の搬送領域Ｓ１１と、第１の搬送領域Ｓ１１の後方（ウエハ搬送領域Ｓ２０側）に位置する第２の搬送領域Ｓ１２とを含む。 The carrier transport region S10 has an atmospheric atmosphere. The carrier transport area S10 is an area for the carrier 40 containing the semiconductor wafer (hereinafter referred to as “wafer W”), which is an example of the substrate, to be carried in or out of the substrate processing device 1. The carrier 40 may be, for example, a FOUP (Front-Opening Unified Pod). By maintaining the cleanliness in the FOUP at a predetermined level, it is possible to prevent foreign matter from adhering to the surface of the wafer W and the formation of a natural oxide film. The carrier transfer area S10 includes a first transfer area S11 and a second transfer area S12 located behind the first transfer area S11 (on the wafer transfer area S20 side).

第１の搬送領域Ｓ１１の左右方向には、キャリア４０を載置する２つの第１の載置台１４が設けられている。第１の載置台１４のキャリア４０を載置する面には、キャリア４０を位置決めする複数（例えば３つ）の位置決めピン１４ａが設けられている。 Two first mounting tables 14 on which the carrier 40 is mounted are provided in the left-right direction of the first transport region S11. A plurality of (for example, three) positioning pins 14a for positioning the carrier 40 are provided on the surface of the first mounting table 14 on which the carrier 40 is mounted.

第２の搬送領域Ｓ１２には、第１の載置台１４に対して前後に並ぶように、左右に２つの第２の載置台１６が配置されている。第２の載置台１６は、進退機構１７により前後に移動自在に構成されており、キャリア４０からウエハＷをウエハ搬送領域Ｓ２０に受け渡すための受け渡し位置と、キャリア搬送機構１９からキャリア４０を受け取る受け取り位置との間でキャリア４０を搬送する。第２の載置台１６のキャリア４０を載置する面には、キャリア４０を位置決めする複数（例えば３つ）の位置決めピン１６ａと、キャリア４０を固定するためのフック１６ｂとが設けられている。 In the second transport area S12, two second mounting tables 16 are arranged on the left and right so as to be arranged in the front-rear direction with respect to the first mounting table 14. The second mounting table 16 is configured to be movable back and forth by the advancing / retreating mechanism 17, and receives the transfer position for transferring the wafer W from the carrier 40 to the wafer transfer area S20 and the carrier 40 from the carrier transfer mechanism 19. The carrier 40 is transported to and from the receiving position. On the surface of the second mounting table 16 on which the carrier 40 is mounted, a plurality of (for example, three) positioning pins 16a for positioning the carrier 40 and hooks 16b for fixing the carrier 40 are provided.

第２の搬送領域Ｓ１２の上部には、キャリア４０を保管するキャリア保管部１８が設けられている。キャリア保管部１８は、例えば２段の棚により構成されており、各棚は左右に２つのキャリア４０を載置することができる。第２の搬送領域Ｓ１２には、第１の載置台１４、第２の載置台１６、及びキャリア保管部１８との間でキャリア４０を搬送するキャリア搬送機構１９が設けられている。キャリア搬送機構１９は、左右に伸び、且つ昇降自在なガイド１９ａと、ガイド１９ａにガイドされながら左右に移動する移動部１９ｂと、移動部１９ｂに設けられ、キャリア４０を保持して水平方向に搬送する関節アーム１９ｃと、を備えている。 A carrier storage unit 18 for storing the carrier 40 is provided above the second transport area S12. The carrier storage unit 18 is composed of, for example, two shelves, and two carriers 40 can be placed on the left and right sides of each shelf. The second transport area S12 is provided with a carrier transport mechanism 19 that transports the carrier 40 between the first mounting table 14, the second mounting table 16, and the carrier storage unit 18. The carrier transport mechanism 19 is provided on a guide 19a that extends left and right and can be raised and lowered, a moving portion 19b that moves left and right while being guided by the guide 19a, and a moving portion 19b that holds the carrier 40 and transports the carrier 40 in the horizontal direction. It is provided with a joint arm 19c and the like.

ウエハ搬送領域Ｓ２０は、キャリア４０からウエハＷを取り出し、各種の処理を施す領域である。ウエハ搬送領域Ｓ２０は、ウエハＷに酸化膜が形成されることを防ぐために、不活性ガス雰囲気、例えば窒素（Ｎ２）ガス雰囲気とされている。ウエハ搬送領域Ｓ２０には、下端が炉口として開口された縦型の処理容器２２が設けられている。 The wafer transfer region S20 is an region in which the wafer W is taken out from the carrier 40 and various processes are performed. The wafer transport region S20 has an inert gas atmosphere, for example, a nitrogen (N 2 ) gas atmosphere, in order to prevent the oxide film from being formed on the wafer W. The wafer transfer region S20 is provided with a vertical processing container 22 having a lower end opened as a furnace opening.

処理容器２２の下方には、多数枚のウエハＷを棚状に保持するウエハボート２３が断熱部２４を介してキャップ２５の上に載置されている。キャップ２５は昇降機構２６の上に支持されており、昇降機構２６によりウエハボート２３が処理容器２２に対して搬入又は搬出される。 Below the processing container 22, a wafer boat 23 that holds a large number of wafers W in a shelf shape is placed on the cap 25 via a heat insulating portion 24. The cap 25 is supported on the elevating mechanism 26, and the wafer boat 23 is carried in or out of the processing container 22 by the elevating mechanism 26.

ウエハボート２３と搬送口１２との間には、ウエハ搬送機構２７が設けられている。ウエハ搬送機構２７は、左右に伸びるガイド機構２７ａに沿って移動すると共に鉛直軸回りに回動する移動体２７ｂに、５枚の進退自在なアーム２７ｃを設けて構成され、ウエハボート２３と第２の載置台１６上のキャリア４０との間でウエハＷを搬送する。 A wafer transfer mechanism 27 is provided between the wafer boat 23 and the transfer port 12. The wafer transfer mechanism 27 is configured by providing five advancing and retreating arms 27c on a moving body 27b that moves along a guide mechanism 27a extending to the left and right and rotates around a vertical axis, and is composed of a wafer boat 23 and a second wafer transfer mechanism 27. The wafer W is conveyed to and from the carrier 40 on the mounting table 16.

図３は、キャリア４０及び開閉ドア５０の縦断面図である。図４は、キャリア４０及び開閉ドア５０の横断面である。図５は、搬送口１２及びキャリア４０の斜視図である。 FIG. 3 is a vertical cross-sectional view of the carrier 40 and the opening / closing door 50. FIG. 4 is a cross section of the carrier 40 and the opening / closing door 50. FIG. 5 is a perspective view of the transport port 12 and the carrier 40.

キャリア４０は、容器本体であるキャリア本体４１と、蓋体４２とを含む。キャリア本体４１内の左右には、ウエハＷの裏面側周縁部を支持する支持部４１ａが多段に設けられている。キャリア本体４１の前面には、キャリア４０の内部からウエハＷを取り出すための取り出し口４３が形成されている。取り出し口４３の開口縁部４４の内周側の左右の上下には、それぞれ係合溝４４ａが形成されている。 The carrier 40 includes a carrier body 41 which is a container body and a lid body 42. Support portions 41a for supporting the back surface side peripheral edge portion of the wafer W are provided in multiple stages on the left and right sides of the carrier main body 41. An outlet 43 for taking out the wafer W from the inside of the carrier 40 is formed on the front surface of the carrier main body 41. Engagement grooves 44a are formed on the left, right, upper and lower sides of the inner peripheral side of the opening edge 44 of the take-out port 43, respectively.

キャリア本体４１の上部には、キャリア搬送機構１９がキャリア４０を搬送するために把持する把持部４１ｂが設けられている。キャリア本体４１の下部には、凹部４５ａと溝部４５ｂとが設けられている。凹部４５ａは、第１の載置台１４及び第２の載置台１６の位置決めピン１４ａ，１６ａに嵌合する。溝部４５ｂは、第２の載置台１６のフック１６ｂに係合することによってキャリア本体４１が第２の載置台１６に固定される。 A grip portion 41b that the carrier transport mechanism 19 grips for transporting the carrier 40 is provided on the upper portion of the carrier main body 41. A recess 45a and a groove 45b are provided in the lower portion of the carrier body 41. The recess 45a fits into the positioning pins 14a and 16a of the first mounting table 14 and the second mounting table 16. The carrier main body 41 is fixed to the second mounting table 16 by engaging the groove portion 45b with the hook 16b of the second mounting table 16.

蓋体４２の内部には、左右に回動部４６が設けられている。回動部４６の上下には垂直方向に伸びる直動部４７が設けられている。直動部４７は、回動部４６の回動に応じて昇降し、その先端が蓋体４２の側面から突出した状態と、蓋体４２内に引き込んだ状態とで切り替わるように構成されている。なお、図５では、直動部４７の先端が引き込んだ状態を示している。直動部４７の先端がキャリア本体４１の係合溝４４ａに係合することによって、蓋体４２がキャリア本体４１に係合される。蓋体４２の前面には、ラッチキー６９ａを蓋体４２の内部に差し込むための開口４８が設けられている。 Rotating portions 46 are provided on the left and right inside the lid body 42. A linear motion portion 47 extending in the vertical direction is provided above and below the rotating portion 46. The linear motion portion 47 is configured to move up and down in response to the rotation of the rotating portion 46, and to switch between a state in which the tip thereof protrudes from the side surface of the lid body 42 and a state in which the tip thereof is retracted into the lid body 42. .. Note that FIG. 5 shows a state in which the tip of the linear motion portion 47 is retracted. The lid 42 is engaged with the carrier body 41 by engaging the tip of the linear motion portion 47 with the engagement groove 44a of the carrier body 41. An opening 48 for inserting the latch key 69a into the inside of the lid 42 is provided on the front surface of the lid 42.

蓋体４２の前面には、位置合わせ用の窪み４０１が形成されている。対向する対向板６１のレジストレーションピン６０１が位置合わせ用の窪み４０１に挿入され、対向板６１とキャリア４０との位置合わせが行えるように構成されている。かかるレジストレーションピン６０１は、管状に構成され、窪み４０１に挿入された際に、真空吸着して蓋体４２を保持できる構成とされてもよい。 A recess 401 for alignment is formed on the front surface of the lid body 42. The registration pin 601 of the facing plate 61 is inserted into the positioning recess 401 so that the facing plate 61 and the carrier 40 can be aligned. The registration pin 601 may be formed in a tubular shape so that when it is inserted into the recess 401, it can be vacuum-sucked to hold the lid 42.

搬送口１２のキャリア搬送領域Ｓ１０側の開口縁部には、キャリア本体４１の開口縁部４４が当接する位置にシール部材１３が設けられている。 A seal member 13 is provided at a position where the opening edge 44 of the carrier main body 41 comes into contact with the opening edge of the transport port 12 on the carrier transport region S10 side.

開閉ドア５０は、その周縁部がキャリア搬送領域Ｓ１０側へ向けて屈曲された箱体として形成されている。箱体の開口縁部にはシール部材５２が設けられ、シール部材５２を介して開閉ドア５０は搬送口１２の開口縁部に密着する。 The opening / closing door 50 is formed as a box whose peripheral edge is bent toward the carrier transport region S10 side. A sealing member 52 is provided at the opening edge of the box body, and the opening / closing door 50 is brought into close contact with the opening edge of the transport port 12 via the sealing member 52.

開閉ドア５０のキャリア搬送領域Ｓ１０側には、蓋体４２を開閉する蓋体開閉機構６０が設けられている。蓋体開閉機構６０は、対向板６１と、対向板６１を前後方向に移動させる進退機構６２とを備えている。対向板６１は、第２の載置台１６に載置された蓋体４２の前面に対向する対向面部６３を備えている。 A lid opening / closing mechanism 60 for opening / closing the lid 42 is provided on the carrier transport region S10 side of the opening / closing door 50. The lid opening / closing mechanism 60 includes a facing plate 61 and an advancing / retreating mechanism 62 that moves the facing plate 61 in the front-rear direction. The facing plate 61 includes a facing surface portion 63 facing the front surface of the lid 42 mounted on the second mounting table 16.

対向面部６３からその厚さ方向に棒状の接続部６９が伸びており、接続部６９の先端には円い棒状のラッチキー６９ａが設けられている。接続部６９がその軸回りに回動することによって、ラッチキー６９ａも回動する。ラッチキー６９ａは蓋体４２の回動部４６に係合し、回動部４６を回動させることができるように形成されている。 A rod-shaped connecting portion 69 extends from the facing surface portion 63 in the thickness direction thereof, and a round rod-shaped latch key 69a is provided at the tip of the connecting portion 69. As the connecting portion 69 rotates around its axis, the latch key 69a also rotates. The latch key 69a is formed so as to engage with the rotating portion 46 of the lid body 42 so that the rotating portion 46 can be rotated.

ガス供給機構７０は、搬送口１２の開口縁部に取り出し口４３の開口縁部４４を密着させたキャリア４０の内部に、搬送口１２の開口縁部からイオン化されたガスを吹き付ける。ガス供給機構７０は、ガス供給管７１と、吐出口７２と、ガス供給ライン７３と、ガス供給源７４と、イオナイザ７５と、を有する。 The gas supply mechanism 70 blows ionized gas from the opening edge of the transport port 12 into the inside of the carrier 40 in which the opening edge 44 of the take-out port 43 is brought into close contact with the opening edge of the transport port 12. The gas supply mechanism 70 includes a gas supply pipe 71, a discharge port 72, a gas supply line 73, a gas supply source 74, and an ionizer 75.

ガス供給管７１は、図４に示されるように、搬送口１２の側縁部側に垂直に設けられている。ガス供給管７１は、例えばブレイクフィルタにより構成されている。ブレイクフィルタは、セラミックス等の多孔質構造を有する焼結体であり、多数の気孔が互いに連通することで三次元網目状にガスの流路を形成する。 As shown in FIG. 4, the gas supply pipe 71 is provided vertically on the side edge side of the transport port 12. The gas supply pipe 71 is composed of, for example, a break filter. The break filter is a sintered body having a porous structure such as ceramics, and a large number of pores communicate with each other to form a gas flow path in a three-dimensional network.

吐出口７２は、ガス供給管７１の上下に形成されている。吐出口７２は、ガス供給管７１に供給されたガスをキャリア４０に向けて吐出可能に構成されている。 Discharge ports 72 are formed above and below the gas supply pipe 71. The discharge port 72 is configured so that the gas supplied to the gas supply pipe 71 can be discharged toward the carrier 40.

ガス供給ライン７３は、一端がガス供給管７１と接続されており、他端がガス供給源７４と接続されている。 One end of the gas supply line 73 is connected to the gas supply pipe 71, and the other end is connected to the gas supply source 74.

ガス供給源７４は、ガス供給ライン７３にＮ２ガスを供給する。また、Ｎ２ガスに代えて、Ａｒ等の別の不活性ガスを用いてもよい。 Gas supply 74 supplies a N 2 gas to the gas supply line 73. Further, instead of the N 2 gas, another inert gas such as Ar may be used.

イオナイザ７５は、ガス供給ライン７３に介設されており、ガス供給ライン７３を流れるＮ２ガスをイオン化する。イオナイザ７５は、例えばコロナ放電を利用する方式であってもよく、軟Ｘ線、紫外線等の電離放射線を利用する方式であってもよい。また、イオナイザ７５の後段にパーティクルを除去するためのフィルタを設けてもよい。 The ionizer 75 is interposed in the gas supply line 73 and ionizes the N 2 gas flowing through the gas supply line 73. The ionizer 75 may be, for example, a method using corona discharge, or a method using ionizing radiation such as soft X-rays and ultraviolet rays. Further, a filter for removing particles may be provided after the ionizer 75.

係る構成のガス供給機構７０では、ガス供給源７４からガス供給ライン７３にＮ２ガスが供給され、供給されたＮ２ガスはイオナイザ７５によってイオン化されて、ガス供給管７１の吐出口７２から吐出される。 In the gas supply mechanism 70 having such a configuration, N 2 gas is supplied from the gas supply source 74 to the gas supply line 73, and the supplied N 2 gas is ionized by the ionizer 75 and discharged from the discharge port 72 of the gas supply pipe 71. Will be done.

具体的には、例えばイオン化されたＮ２ガスは、搬送口１２のキャリア搬送領域Ｓ１０側の開口縁部にキャリア４０の開口縁部４４を密着させ、蓋体開閉機構６０によりキャリア４０から蓋体４２を取り外して取り出し口４３を開放した状態で、吐出口７２から吐出される。これにより、イオン化されたＮ２ガスは、キャリア４０の内部に万遍なく流入する。その結果、キャリア４０の内面が除電され、キャリア４０の内面へのパーティクルの付着が抑制される。また、キャリア４０の内面にパーティクルが付着している場合であっても、キャリア４０の内部に吹き付けられるイオン化されたＮ２ガスによりパーティクルが除去される。 Specifically, for example, ionized N 2 gas, an opening edge portion 44 of the carrier 40 is adhered to the opening edge portion of the carrier transport region S10 side of the transfer port 12, the lid from the carrier 40 by the lid opening and closing mechanism 60 With the 42 removed and the take-out port 43 open, the battery is discharged from the discharge port 72. As a result, the ionized N 2 gas evenly flows into the carrier 40. As a result, the inner surface of the carrier 40 is statically eliminated, and the adhesion of particles to the inner surface of the carrier 40 is suppressed. Further, even when the particles are adhered to the inner surface of the carrier 40, the particles are removed by ionized N 2 gas is blown into the interior of the carrier 40.

また、例えばイオン化されたＮ２ガスは、搬送口１２のキャリア搬送領域Ｓ１０側の開口縁部にキャリア４０の開口縁部４４を密着させ、且つキャリア４０の取り出し口４３が蓋体４２で閉じられている状態で、吐出口７２から吐出されてもよい。この場合、キャリア４０（蓋体４２）と開閉ドア５０とに囲まれて形成される閉塞空間にイオン化されたＮ２ガスが吹き付けられる。その結果、閉塞空間がＮ２ガスで置換されると共に、閉塞空間を形成する蓋体４２のウエハ搬送領域Ｓ２０側、開閉ドア５０の内面、蓋体開閉機構６０等が除電される。 Further, for example, in the ionized N 2 gas, the opening edge 44 of the carrier 40 is brought into close contact with the opening edge 44 on the carrier transport region S10 side of the transport port 12, and the take-out port 43 of the carrier 40 is closed by the lid 42. In this state, the gas may be discharged from the discharge port 72. In this case, N 2 gas is ionized in the closed space formed by being surrounded by the carrier 40 (the lid 42) and the door 50 is blown. As a result, closed space while being replaced with N 2 gas, the wafer transfer area S20 of the lid body 42 to form a closed space, the inner surface of the door 50, the lid opening and closing mechanism 60 and the like are static elimination.

搬送口１２の下端部には、横長の排気口７６が設けられている。排気口７６は、ガス供給管７１の吐出口７２から吐出されたガスを排気する。 A horizontally long exhaust port 76 is provided at the lower end of the transport port 12. The exhaust port 76 exhausts the gas discharged from the discharge port 72 of the gas supply pipe 71.

また、開閉ドア５０のキャリア搬送領域Ｓ１０側へ向けて屈曲された部分のうちの下部の内面には、電位計７７が設けられている。電位計７７は、開閉ドア５０により搬送口１２が閉じられ、蓋体開閉機構６０によりキャリア４０の蓋体４２が開放されたとき、キャリア４０の内面に帯電した静電気の電位を検出する。電位計７７としては、例えば非接触式の表面電位計を用いることができる。なお、電位計７７が設けられる位置は、キャリア４０の内面に帯電した静電気の電位を検出できる位置であれば別の位置であってもよい。 Further, an electrometer 77 is provided on the inner surface of the lower portion of the portion of the opening / closing door 50 that is bent toward the carrier transport region S10 side. The electrometer 77 detects the potential of static electricity charged on the inner surface of the carrier 40 when the transport port 12 is closed by the opening / closing door 50 and the lid 42 of the carrier 40 is opened by the lid opening / closing mechanism 60. As the electrometer 77, for example, a non-contact type surface electrometer can be used. The position where the electrometer 77 is provided may be a different position as long as it can detect the potential of static electricity charged on the inner surface of the carrier 40.

基板処理装置１には、例えばコンピュータからなる制御部１００が設けられている。制御部１００はプログラム、メモリ、ＣＰＵからなるデータ処理部等を備えている。プログラムには、制御部１００から基板処理装置１の各部に制御信号を送り、後述の各処理工程を進行させるように命令（各ステップ）が組み込まれている。制御信号により第２の載置台１６の進退、キャリア４０の搬送、蓋体開閉機構６０の進退、ウエハＷの搬送、蓋体４２の開閉、開閉ドア５０の開閉、蓋体４２へのＮ２ガスの供給、イオナイザ７５のオンオフ等の動作が制御され、ウエハＷの搬送及び処理が行われる。プログラムは、コンピュータ記憶媒体例えばフレキシブルディスク、コンパクトディスク、ハードディスク、ＭＯ（光磁気ディスク）及びメモリーカード等の記憶媒体に格納されて制御部１００にインストールされる。 The substrate processing device 1 is provided with a control unit 100 including, for example, a computer. The control unit 100 includes a data processing unit including a program, a memory, and a CPU. The program incorporates instructions (each step) for sending a control signal from the control unit 100 to each unit of the substrate processing device 1 and advancing each processing process described later. Advance / retreat of the second mounting table 16, transfer of the carrier 40, advance / retreat of the lid opening / closing mechanism 60, transfer of the wafer W, opening / closing of the lid 42, opening / closing of the opening / closing door 50, N 2 gas to the lid 42 by a control signal. The operation such as supply of the wafer and on / off of the ionizer 75 is controlled, and the wafer W is conveyed and processed. The program is stored in a storage medium such as a computer storage medium such as a flexible disk, a compact disk, a hard disk, an MO (magneto-optical disk), and a memory card, and is installed in the control unit 100.

（除電方法）
次に、図６から図１１を参照して、制御部１００が基板処理装置１の各部を制御してキャリア４０の内面を除電する方法の一例について説明する。図６は、キャリア４０の除電方法の一例を示すフローチャートである。図７から図１１は、キャリア４０の除電方法の一例を示す工程図である。 (Static elimination method)
Next, an example of a method in which the control unit 100 controls each unit of the substrate processing device 1 to eliminate static electricity on the inner surface of the carrier 40 will be described with reference to FIGS. 6 to 11. FIG. 6 is a flowchart showing an example of a static elimination method for the carrier 40. 7 to 11 are process diagrams showing an example of a static elimination method for the carrier 40.

最初に、キャリア４０内のウエハＷを搬出する準備を行う（ステップＳＴ１）。具体的には、自動搬送ロボット（図示せず）により、キャリア４０を第１の載置台１４に載置した後、キャリア搬送機構１９により、キャリア４０を、第１の載置台１４から第２の載置台１６に搬送し、フック１６ｂにより第２の載置台１６に固定する。続いて、進退機構１７により、第２の載置台１６を隔壁１１の搬送口１２へ向けて前進させる。キャリア４０が前進し、ウエハＷを受け渡すための受け渡し位置に移動し、隔壁１１の搬送口１２の周りのシール部材１３にキャリア４０の開口縁部４４が当接して、キャリア４０と開閉ドア５０との間に閉塞空間が形成される。そして、蓋体開閉機構６０のラッチキー６９ａが蓋体４２内の回動部４６に係合する。ラッチキー６９ａが９０度回動し、蓋体４２とキャリア本体４１との係合が解除されると共にラッチキー６９ａに蓋体４２が保持される。そして、ラッチキー６９ａが蓋体４２を保持した状態で対向板６１が開閉ドア５０へ向けて後退して、キャリア本体４１の取り出し口４３が開放される。開閉ドア５０が後退した後、下降して搬送口１２から退避し、キャリア４０内がウエハ搬送領域Ｓ２０に開放される（図７参照）。 First, preparations are made to carry out the wafer W in the carrier 40 (step ST1). Specifically, after the carrier 40 is mounted on the first mounting table 14 by an automatic transfer robot (not shown), the carrier 40 is mounted on the first mounting table 14 to the second mounting table 14 by the carrier transfer mechanism 19. It is conveyed to the mounting table 16 and fixed to the second mounting table 16 by the hook 16b. Subsequently, the advancing / retreating mechanism 17 advances the second mounting table 16 toward the transport port 12 of the partition wall 11. The carrier 40 advances and moves to a delivery position for delivering the wafer W, the opening edge 44 of the carrier 40 comes into contact with the seal member 13 around the transport port 12 of the partition wall 11, and the carrier 40 and the opening / closing door 50 A closed space is formed between and. Then, the latch key 69a of the lid opening / closing mechanism 60 engages with the rotating portion 46 in the lid 42. The latch key 69a rotates 90 degrees, the engagement between the lid body 42 and the carrier body 41 is released, and the lid body 42 is held by the latch key 69a. Then, with the latch key 69a holding the lid body 42, the facing plate 61 retracts toward the opening / closing door 50, and the take-out port 43 of the carrier main body 41 is opened. After the opening / closing door 50 retracts, it descends and retracts from the transport port 12, and the inside of the carrier 40 is opened to the wafer transport region S20 (see FIG. 7).

次に、キャリア４０内のウエハＷを搬出する（ステップＳＴ２）。具体的には、ウエハ搬送機構２７により、キャリア４０内のウエハＷを順次取り出してウエハボート２３に移載する。キャリア４０内のウエハＷがすべて取り出されると、キャリア４０内が空の状態となる（図８参照）。 Next, the wafer W in the carrier 40 is carried out (step ST2). Specifically, the wafer transfer mechanism 27 sequentially takes out the wafer W in the carrier 40 and transfers it to the wafer boat 23. When all the wafers W in the carrier 40 are taken out, the inside of the carrier 40 becomes empty (see FIG. 8).

次に、開閉ドア５０により搬送口１２を閉じる（ステップＳＴ３）。具体的には、退避していた開閉ドア５０を上昇させた後、前進させることにより、開閉ドア５０により搬送口１２を閉じる（図９参照）。 Next, the transport port 12 is closed by the opening / closing door 50 (step ST3). Specifically, by raising the retracted opening / closing door 50 and then moving it forward, the opening / closing door 50 closes the transport port 12 (see FIG. 9).

次に、キャリア４０の内面にイオン化されたＮ２ガスを吹き付ける（ステップＳＴ４）。具体的には、イオナイザ７５の動作を開始させて、吐出口７２からキャリア４０の内部に、イオン化されたＮ２ガスを吹き付ける（図１０参照）。これにより、キャリア４０の内面が除電され、キャリア４０の内面へのパーティクルの付着が抑制される。また、キャリア４０の内面にパーティクルが付着している場合であっても、キャリア４０の内部に吹き付けられるイオン化されたＮ２ガスによりパーティクルが除去される。イオナイザ７５の動作を開始してから所定時間が経過した後、イオナイザ７５の動作を停止する。所定時間は、例えばキャリア４０の内部にイオン化されたＮ２ガスを吹き付ける前に電位計７７によりキャリア４０の内面の帯電量を計測し、計測した帯電量と、予め記憶部に記憶された帯電量と除電に必要なイオン化されたＮ２ガスの吹き付け時間と、の関係を示す吹き付け時間設定テーブルに基づいて算出される時間とすることができる。また、所定時間に代えて、例えばキャリア４０の内面にイオン化されたＮ２ガスを吹き付けながら電位計７７によりキャリア４０の内面の帯電量を計測し、計測された帯電量が所定の帯電量以下になった後、イオナイザ７５の動作を停止させてもよい。また、例えばキャリア４０の内面にイオン化されたＮ２ガスを予め定められた時間だけ吹き付けた後、電位計７７によりキャリア４０の内面の帯電量を計測し、計測された帯電量が所定の帯電量以下の場合、イオナイザ７５の動作を停止し、計測された帯電量が所定の帯電量よりも大きい場合、再びキャリア４０の内面にイオン化されたＮ２ガスを予め定められた時間だけ吹き付けてもよい。また、例えば排気口７６側に気中パーティクル測定器を設置し、排気口７６から排出されるガスに含まれるパーティクル量の変化を測定し、測定したパーティクル量の変化に基づいて、イオナイザ７５の動作を停止させてもよい。また、例えばこれらの方法を組み合わせて、イオナイザ７５の動作を停止するタイミングを決定してもよい。 Next, spray the ionized N 2 gas to the inner surface of the carrier 40 (step ST4). Specifically, to initiate the operation of the ionizer 75, from the discharge port 72 into the interior of the carrier 40 blows ionized N 2 gas (see Fig. 10). As a result, the inner surface of the carrier 40 is statically eliminated, and the adhesion of particles to the inner surface of the carrier 40 is suppressed. Further, even when the particles are adhered to the inner surface of the carrier 40, the particles are removed by ionized N 2 gas is blown into the interior of the carrier 40. After a predetermined time has elapsed from the start of the operation of the ionizer 75, the operation of the ionizer 75 is stopped. Predetermined time, for example, the charge amount of the inner surface of the carrier 40 is measured by the electrometer 77 before blowing inside ionized N 2 gas carrier 40, and the measured charge amount, the charge amount stored in advance in the storage unit It may be the spraying time and the N 2 gas which is ionized required neutralization, the time blowing showing the relationship calculated based on the time setting table. Further, instead of the predetermined time, for example, the charge amount of the inner surface of the carrier 40 is measured by voltmeter 77 while blowing ionized N 2 gas to the inner surface of the carrier 40, the amount of measured charge within less than a predetermined charge amount After that, the operation of the ionizer 75 may be stopped. Further, for example, after spraying on the inner surface of the carrier 40 by a predetermined time the ionized N 2 gas, the charge amount of the inner surface of the carrier 40 is measured by the electrometer 77, the amount of measured charge reaches a predetermined charge amount in the following cases, it stops the operation of the ionizer 75, when the charge amount measured is greater than a predetermined charge amount, may be sprayed by a predetermined time the N 2 gas which is ionized to the inner surface of the carrier 40 again .. Further, for example, an aerial particle measuring device is installed on the exhaust port 76 side, a change in the amount of particles contained in the gas discharged from the exhaust port 76 is measured, and the operation of the ionizer 75 is performed based on the change in the measured particle amount. May be stopped. Further, for example, these methods may be combined to determine the timing at which the operation of the ionizer 75 is stopped.

次に、蓋体４２によりキャリア４０の取り出し口４３を閉じる（ステップＳＴ５）。具体的には、前述した動作と逆の動作によって、キャリア本体４１の取り出し口４３を蓋体４２により閉じ、蓋体４２をキャリア本体４１に固定する（図１１参照）。 Next, the take-out port 43 of the carrier 40 is closed by the lid body 42 (step ST5). Specifically, the take-out port 43 of the carrier main body 41 is closed by the lid body 42 and the lid body 42 is fixed to the carrier main body 41 by an operation opposite to the above-described operation (see FIG. 11).

続いて、第２の載置台１６が後退してキャリア４０が隔壁１１から離れ、キャリア搬送機構１９によりキャリア保管部１８に搬送されて一時的に保管される。一方、ウエハＷが搭載されたウエハボート２３は、処理容器２２内に搬入されて、ウエハＷにＣＶＤ、アニール処理、酸化処理等の処理が行われる。その後、キャリア保管部１８に一時的に保管されていたキャリア４０がキャリア搬送機構１９により第２の載置台１６に搬送され、前述した手順と同様の手順により、蓋体４２が取り外され、キャリア本体４１の取り出し口４３が開放される。そして、処理を終えたウエハＷがキャリア４０内に収納される。このとき、イオン化されたＮ２ガスによってキャリア４０の内面が除電され、キャリア４０の内面にパーティクルがほとんど付着していないので、処理を終えたウエハＷへのパーティクルの付着を抑制できる。 Subsequently, the second mounting table 16 retracts, the carrier 40 separates from the partition wall 11, and is transported to the carrier storage unit 18 by the carrier transport mechanism 19 for temporary storage. On the other hand, the wafer boat 23 on which the wafer W is mounted is carried into the processing container 22, and the wafer W is subjected to processing such as CVD, annealing treatment, and oxidation treatment. After that, the carrier 40 temporarily stored in the carrier storage unit 18 is transported to the second mounting table 16 by the carrier transport mechanism 19, the lid 42 is removed by the same procedure as the above-described procedure, and the carrier main body is removed. The take-out port 43 of 41 is opened. Then, the processed wafer W is stored in the carrier 40. At this time, the inner surface of the carrier 40 is discharged by the N 2 gas is ionized, since the particles on the inner surface of the carrier 40 is hardly adhered, it can suppress the adhesion of particles to the wafer W having been subjected to the process.

なお、上記の例では、イオナイザ７５の動作を停止させた後にキャリア４０の蓋体４２を閉じているが、例えばキャリア４０の内面にイオン化されたＮ２ガスを吹き付けながら蓋体４２を閉じるようにしてもよい。これにより、蓋体４２のウエハ搬送領域Ｓ２０側、蓋体開閉機構６０、開閉ドア５０の内面等についても除電することができ、蓋体４２のウエハ搬送領域Ｓ２０側、蓋体開閉機構６０、開閉ドア５０の内面等へのパーティクルの付着を抑制できる。また、蓋体４２のウエハ搬送領域Ｓ２０側、蓋体開閉機構６０、開閉ドア５０の内面等にパーティクルが付着している場合であっても、キャリア４０の内面にイオン化されたＮ２ガスによりパーティクルを除去できる。 In the above example, although closed the lid 42 of the carrier 40 after stopping the operation of the ionizer 75, for example, to close the lid 42 while blowing ionized N 2 gas to the inner surface of the carrier 40 You may. As a result, static electricity can be eliminated from the wafer transport area S20 side of the lid 42, the lid opening / closing mechanism 60, the inner surface of the opening / closing door 50, etc., and the wafer transport area S20 side of the lid 42, the lid opening / closing mechanism 60, opening / closing. Adhesion of particles to the inner surface of the door 50 can be suppressed. Further, the particles wafer transfer area S20 side of the lid 42, the lid opening and closing mechanism 60, even if the particles on the inner surface or the like of the door 50 is attached, by N 2 gas is ionized to the inner surface of the carrier 40 Can be removed.

また、上記の例では、キャリア４０からウエハＷを搬出した直後にキャリア４０の内部にイオン化されたＮ２ガスを吹き付けてキャリア４０の内面を除電する場合を例に挙げて説明したが、これに限定されない。例えば、処理容器２２にて所定の処理が行われたウエハＷをキャリア４０に搬入する直前にキャリア４０の内部にイオン化されたＮ２ガスを吹き付けてキャリア４０の内面を除電してもよい。 Further, in the above example has been described by taking as an example a case where by blowing N 2 gas inside the carrier 40 to the ionized immediately after unloading the wafer W from the carrier 40 to neutralize the inner surface of the carrier 40 as an example, to Not limited. For example, it may be neutralizing the inner surface of the carrier 40 by blowing N 2 gas is ionized in the interior of the carrier 40 just before the wafer W is loaded which the predetermined processing has been performed in the processing vessel 22 to the carrier 40.

以上に説明したように、本発明の実施形態では、搬送口１２の開口縁部に取り出し口４３の開口縁部４４を密着させたキャリア４０の内部に、搬送口１２の開口縁部からイオン化されたガスを吹き付けるガス供給機構７０を有する。これにより、キャリア４０の内部にイオン化されたＮ２ガスを吹き付けることができるので、キャリア４０の内面を除電し、キャリア４０の内面へのパーティクルの付着を抑制できる。そのため、キャリア４０に収納されるウエハＷにパーティクルが付着したり、キャリア４０の蓋体４２を取り外するときにパーティクルがウエハ搬送領域Ｓ２０に混入したりすることを抑制できる。また、キャリア４０の内面にパーティクルが付着している場合であっても、キャリア４０の内部に吹き付けられるイオン化されたＮ２ガスによりパーティクルを除去できる。さらに、キャリア４０が次工程に搬送されて蓋体４２が開閉された場合、キャリア４０の内面が除電されているので、次工程においてキャリア４０が載置される領域にパーティクルが浮遊していても、キャリア４０の内面に付着することを抑制できる。 As described above, in the embodiment of the present invention, the inside of the carrier 40 in which the opening edge 44 of the take-out port 43 is brought into close contact with the opening edge of the transport port 12 is ionized from the opening edge of the transport port 12. It has a gas supply mechanism 70 for blowing the gas. Thus, it is possible to blow inside ionized N 2 gas carrier 40, and discharges the inner surface of the carrier 40, can suppress the adhesion of particles to the inner surface of the carrier 40. Therefore, it is possible to prevent particles from adhering to the wafer W housed in the carrier 40 and particles from being mixed into the wafer transport region S20 when the lid 42 of the carrier 40 is removed. Further, even if the particles on the inner surface of the carrier 40 has been attached, it can remove particles by ionized N 2 gas blown to the inside of the carrier 40. Further, when the carrier 40 is conveyed to the next step and the lid 42 is opened and closed, the inner surface of the carrier 40 is statically eliminated, so that even if particles are suspended in the area where the carrier 40 is placed in the next step. , It is possible to prevent the carrier 40 from adhering to the inner surface.

なお、上記の実施形態において、キャリア４０は基板収納容器の一例であり、キャリア搬送領域Ｓ１０は容器搬送領域の一例であり、ウエハ搬送領域Ｓ２０は基板搬送領域の一例である。また、イオナイザ７５はイオン化装置の一例である。 In the above embodiment, the carrier 40 is an example of a substrate storage container, the carrier transfer area S10 is an example of a container transfer area, and the wafer transfer area S20 is an example of a substrate transfer area. The ionizer 75 is an example of an ionizer.

以上、本発明を実施するための形態について説明したが、上記内容は、発明の内容を限定するものではなく、本発明の範囲内で種々の変形及び改良が可能である。 Although the embodiment for carrying out the present invention has been described above, the above contents do not limit the contents of the invention, and various modifications and improvements can be made within the scope of the present invention.

上記の実施形態では、基板が半導体ウエハである場合を例に挙げて説明したが、これに限定されず、例えば基板はガラス基板やＬＣＤ基板であってもよい。 In the above embodiment, the case where the substrate is a semiconductor wafer has been described as an example, but the present invention is not limited to this, and the substrate may be, for example, a glass substrate or an LCD substrate.

１ 基板処理装置
１０ 筐体
１１ 隔壁
１２ 搬送口
２２ 処理容器
２７ ウエハ搬送機構
４０ キャリア
４３ 取り出し口
４４ 開口縁部
５０ 開閉ドア
６０ 蓋体開閉機構
７０ ガス供給機構
７１ ガス供給管
７２ 吐出口
７３ ガス供給ライン
７４ ガス供給源
７５ イオナイザ
７７ 電位計
１００ 制御部
Ｓ１０ キャリア搬送領域
Ｓ２０ ウエハ搬送領域
Ｗ ウエハ 1 Substrate processing device 10 Housing 11 Partition 12 Transport port 22 Processing container 27 Wafer transport mechanism 40 Carrier 43 Extract port 44 Opening edge 50 Opening / closing door 60 Lid opening / closing mechanism 70 Gas supply mechanism 71 Gas supply pipe 72 Discharge port 73 Gas supply Line 74 Gas supply source 75 Ionizer 77 Electrometer 100 Control unit S10 Carrier transfer area S20 Wafer transfer area W Wafer

Claims (8)

基板搬送領域と容器搬送領域とを区画する隔壁と、
前記隔壁に形成された搬送口と、
前記搬送口の開口縁部に取り出し口の開口縁部を密着させた基板収納容器の内部に、前記搬送口の開口縁部からイオン化されたガスを吹き付けるガス供給機構と、
周縁部が前記容器搬送領域の側へ向けて屈曲された屈曲部を含む箱体として形成され、前記周縁部を前記搬送口の開口縁部に密着させることで前記搬送口を閉じる開閉ドアと、
前記屈曲部の下部の内面に設けられ、前記基板収納容器の内面の電位を検出する電位計と、
を有する、
基板搬入出装置。 A partition wall that separates the substrate transport area and the container transport area,
The transport port formed in the partition wall and
A gas supply mechanism that blows ionized gas from the opening edge of the transport port into the inside of the substrate storage container in which the opening edge of the take-out port is brought into close contact with the opening edge of the transport port.
An opening / closing door in which the peripheral edge portion is formed as a box body including a bent portion bent toward the side of the container transport region, and the peripheral edge portion is brought into close contact with the opening edge portion of the transport port to close the transport port.
An electrometer provided on the inner surface of the lower part of the bent portion and detecting the electric potential on the inner surface of the substrate storage container, and
Have,
Board loading / unloading device. 前記ガス供給機構は、
前記隔壁に形成され、前記ガスを吐出する吐出口を有するガス供給管と、
前記ガス供給管と連通し、前記ガス供給管に前記ガスを供給するガス供給ラインと、
前記ガス供給ラインに介設され、前記ガス供給ラインを流れる前記ガスをイオン化するイオン化装置と、
を有する、
請求項１に記載の基板搬入出装置。 The gas supply mechanism
A gas supply pipe formed in the partition wall and having a discharge port for discharging the gas,
A gas supply line that communicates with the gas supply pipe and supplies the gas to the gas supply pipe.
An ionizing device that is interposed in the gas supply line and ionizes the gas flowing through the gas supply line.
Have,
The substrate loading / unloading device according to claim 1. 前記電位計により検出される前記基板収納容器の内面の電位に基づいて、前記イオン化装置の動作を制御する制御部と、
を有する、
請求項２に記載の基板搬入出装置。 Based on the potential of the inner surface of the substrate storage container is detected by the pre-Symbol electrometer, and a control unit for controlling the operation of the ionizer,
Have,
The substrate loading / unloading device according to claim 2. 請求項１乃至３のいずれか一項に記載の基板搬入出装置と、
前記基板搬送領域内に設けられ、基板を搬送する搬送機構と、
前記基板搬送領域内に設けられた処理容器と、
を有する、
基板処理装置。 The board loading / unloading device according to any one of claims 1 to 3.
A transport mechanism provided in the substrate transport region for transporting the substrate,
A processing container provided in the substrate transport area and
Have,
Board processing equipment. 基板搬送領域と容器搬送領域とを区画する隔壁に形成された搬送口の開口縁部に、基板収納容器の取り出し口の開口縁部を密着させる工程と、
前記搬送口を開閉する開閉ドアにより前記搬送口を塞ぐ工程と、
前記開閉ドアにより前記搬送口を塞いだ状態で、前記基板収納容器の内部に、前記搬送口の開口縁部からイオン化されたガスを吹き付ける工程と、
を有する、
基板収納容器の除電方法。 A step of bringing the opening edge of the take-out port of the substrate storage container into close contact with the opening edge of the transport port formed in the partition wall that separates the substrate transport area and the container transport area.
A process of closing the transport port with an opening / closing door that opens and closes the transport port, and
A step of blowing ionized gas from the opening edge of the transport port into the inside of the substrate storage container with the transport port closed by the opening / closing door.
Have,
How to remove static electricity from the board storage container. 前記基板収納容器の内部に、前記搬送口の開口縁部からイオン化されたガスを吹き付ける工程は、前記基板収納容器の前記取り出し口を塞ぐ蓋体が取り外された状態で行われる、
請求項５に記載の基板収納容器の除電方法。 The step of spraying the ionized gas from the opening edge of the transport port into the inside of the substrate storage container is performed in a state where the lid that closes the take-out port of the substrate storage container is removed.
The method for removing static electricity from a substrate storage container according to claim 5. 前記基板収納容器の内部に、前記搬送口の開口縁部からイオン化されたガスを吹き付ける工程は、前記基板収納容器の内部に基板が収納されていない状態で行われる、
請求項５又は６に記載の基板収納容器の除電方法。 The step of spraying the ionized gas from the opening edge of the transport port onto the inside of the substrate storage container is performed in a state where the substrate is not stored inside the substrate storage container.
The method for removing static electricity from a substrate storage container according to claim 5 or 6. 前記基板収納容器の内部に、前記搬送口の開口縁部からイオン化されたガスを吹き付ける工程の後に、前記基板収納容器の前記取り出し口を蓋体により塞ぐ工程を有する、
請求項５乃至７のいずれか一項に記載の基板収納容器の除電方法。 After the step of spraying the ionized gas from the opening edge of the transport port into the inside of the substrate storage container, there is a step of closing the take-out port of the board storage container with a lid.
The method for removing static electricity from a substrate storage container according to any one of claims 5 to 7.
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