JP4541232B2 - Processing system and processing method - Google Patents

Description

  The present invention relates to a processing system and a processing method for processing a substrate.

  For example, in a manufacturing process of a semiconductor device such as an LSI, a processing system that performs various processes such as a cleaning process and a heat treatment on a semiconductor wafer (hereinafter referred to as “wafer”) is used. Generally, such a processing system includes a mounting table on which a carrier for storing a plurality of wafers arranged in a substantially parallel posture, a processing unit having a substrate processing apparatus, a carrier mounting unit, and a processing unit. And a substrate transfer unit having a substrate transfer device for transferring a wafer between them (see, for example, Patent Documents 1 and 2). The wafer is transferred to the processing system while being stored in the carrier. The carrier is mounted on the mounting table in a posture in which the internal wafer is substantially horizontal and the opening closed by the lid is directed to the gate provided on the side wall of the substrate transfer unit. When the carrier is placed, the lid is removed from the opening of the carrier to open the opening, and the shutter is removed from the gate to open the gate. Then, the wafer is unloaded from the carrier through the opening and the gate by the substrate transfer device and transferred to the processing unit. A wafer that has been subjected to a predetermined process in the processing unit is unloaded from the processing unit by the substrate transfer device, and is loaded into the carrier through the opening and the gate.

  By the way, in the carrier, for example, particulate contaminants (particles) or gaseous contaminants invading in the previous step may be accumulated, and the carrier opening is opened when an unprocessed wafer is taken out. When opened, contaminants in the carrier may enter the processing system and contaminate the processing system. In order to solve this problem, various configurations for replacing the atmosphere in the carrier have been proposed (see, for example, Patent Documents 2 and 3).

  As an example of such a configuration, a configuration is proposed in which a gas supply mechanism for supplying gas to the internal space of the carrier is provided in the vicinity of the gate of the substrate transfer unit, and an exhaust path for exhausting the internal space of the carrier is provided on the mounting table (See, for example, Patent Document 2). In this configuration, the gas injected from the gas supply mechanism is supplied into the carrier through the gate and the opening with a reduced flow velocity. And the atmosphere in a carrier is exhausted via the exhaust port provided in the lower surface of the carrier, and the exhaust path provided in the mounting base.

  As another example, a configuration has been proposed in which an air supply nozzle for supplying air to the internal space of the carrier and an exhaust hole for exhausting the internal space of the carrier are provided in the carrier (see, for example, Patent Document 3). ). In this configuration, for example, when the carrier is placed on the mounting table, the external air supply path and the exhaust path are connected to the air supply nozzle and the exhaust hole, respectively, and the gas supplied from the air supply nozzle is transferred to the internal space of the carrier. The atmosphere in the internal space is exhausted to the exhaust hole.

JP 2003-273058 A Japanese Patent Laid-Open No. 2004-22674 JP 2003-168728 A

  However, in the conventional processing system, it is difficult to remove particles adhering to the wafer in the carrier and the inner wall of the carrier. In particular, particles are often charged and attached to the wafer or carrier by electrostatic force, and there is a problem that it is difficult to remove from the wafer or carrier.

  Also, if the carrier is provided with an air supply nozzle or exhaust hole, or if a valve mechanism for opening or closing the air supply nozzle or exhaust hole is provided, the structure of the carrier becomes complicated and labor is required for processing. There was a problem that needed. Furthermore, it is necessary to provide an air supply nozzle, an exhaust hole, etc. on all the carriers used in the processing system, resulting in a problem that the cost increases.

  An object of the present invention is to provide a processing system and a processing method capable of effectively removing particles adhering in a carrier and particles adhering to a wafer in a carrier.

In order to solve the above problems, according to the present invention, there is provided a processing system for processing a substrate, comprising a processing unit for processing a substrate, and a mounting table for mounting a storage container for storing a plurality of substrates. The storage container is placed in a state in which the substrates in the storage container are arranged horizontally and vertically, and an opening for loading / unloading the substrate into / from the storage container is directed to the side of the storage container, outside the opening, a plurality of gas supply ports for supplying the gas is provided, each gas supply ports are directed in a direction for supplying a gas in a horizontal direction toward between the boards of the storage container, wherein A suction port for sucking the atmosphere in the storage container is provided outside the opening, a closing member for closing the opening, and a closing member lifting mechanism for lifting and lowering the closing member relative to the opening are provided. The suction port is higher than the closing member While being disposed location, and wherein the following the said closure member is movable up and down, the processing system is provided. Here, the storage container is, for example, a carrier. According to such a processing system, particles adhering to the upper and lower surfaces of the substrate in the storage container can be suitably blown away by the gas and removed.

  The gas supply ports may be provided on both sides of the opening in the width direction of the opening, and the supply direction of the gas supplied from the gas supply port may be variable.

According to the present invention, there is also provided a method for processing a substrate, wherein the storage container storing the substrate is in a state in which the substrate in the storage container is leveled, and the opening of the storage container is placed on the side of the storage container. The gas is supplied from the outside of the opening toward the inside of the storage container while lowering a closing member that closes the opening relative to the opening. the upper surface of the accommodated substrates and / or along a lower surface to flow the gas, the gas flows downward in the substrate at the rear side of the container opposite to the opening, is discharged to the outside of the opening, the discharge When the gas is sucked by the suction port provided outside the opening, the suction port is arranged at a position higher than the closing member, and is moved downward by following the closing member, and is subjected to suction, The substrate is carried out from the container through the serial opening, characterized in that for performing a predetermined process on unloading the substrate from the container, the processing method is provided.

Further, according to the present invention, there is provided a method of processing a substrate, wherein the substrate is subjected to a predetermined process, and the substrate subjected to the predetermined process is stored in the storage through an opening provided on a side of a storage container. A gas is supplied from the outside of the opening toward the inside of the storage container while being stored horizontally in the container, and the closing member closing the opening is lowered relative to the opening. The gas was allowed to flow along the upper surface and / or the lower surface of the substrate, and the gas that flowed below the substrate on the back side of the storage container facing the opening was discharged to the outside of the opening . When the gas is sucked by a suction port provided outside the opening, the suction port is disposed at a position higher than the closing member, and the suction port sucks the gas while lowering it following the closing member. especially to do And, processing method is provided.

  In the storage container, a plurality of substrates may be stored side by side, and the gas may be supplied between the substrates stored in the storage container. Furthermore, the gas may be supplied while changing the gas supply direction. The gas may be supplied from both sides of the opening in the width direction of the opening, and the gas supply direction from both sides of the opening may be alternately changed.

The gas may be an inert gas or an ionized gas.

  According to the present invention, by forming a gas flow along the upper surface and the lower surface of the substrate in the storage container, the particles adhering to the upper surface and the lower surface of the substrate are washed away and the particles in the storage container are discharged. You can do it. Further, the atmosphere in the storage container can be replaced with the atmosphere of the gas supplied from the gas supply port. There is no need for troublesome processing of the storage container for the particle removal function and the function of replacing the atmosphere in the storage container, and the processing cost of the storage container can be reduced.

  Hereinafter, a preferred embodiment of the present invention will be described based on a processing system for performing a cleaning process on a wafer as an example of a substrate. FIG. 1 is a plan view of a processing system 1 according to the present embodiment, and FIG. 2 is a side view thereof. FIG. 3 is a longitudinal sectional view along the XZ plane (substantially vertical plane) of the processing unit 3 described later. As shown in FIGS. 1 and 2, the processing system 1 includes a loading / unloading unit 2 for loading / unloading the carrier C from / to the processing system 1 from the outside, and a processing unit 3 for performing a cleaning process on the wafer W. ing.

  The loading / unloading unit 2 includes a carrier mounting unit 10 on which a carrier C that is a storage container capable of storing a plurality of, for example, 25 wafers W, and a carrier mounting unit 10 between the carrier mounting unit 10 and the processing unit 3. The provided board | substrate conveyance part 12 is provided. The carrier placement unit 10, the substrate transfer unit 12, and the processing unit 3 are provided so as to be arranged in this order in the X-axis direction (substantially horizontal direction). The carrier placing unit 10 and the substrate transporting unit 12 are partitioned by a boundary wall 15 that is erected along the XZ plane.

  The wafer W has, for example, a substantially circular thin plate shape, and is loaded into the carrier mounting unit 10 from the outside of the processing system 1 in a state where a plurality of wafers are stored in the carrier C. As shown in FIG. 4, the carrier C includes a box-shaped carrier main body 21 whose one side (front surface in FIG. 4) is an opening 20 and a lid 22 that can seal the opening 20. . The opening 20 has a substantially rectangular shape, and the lid body 22 has a substantially rectangular plate shape that is substantially the same size as the opening 20. By inserting the lid 22 into the opening 20 and closing the opening 20, the internal space S of the carrier body 21 can be sealed. The lid body 22 is provided with a lock mechanism (not shown) for fixing the lid body 22 to the opening 20.

  The carrier body 21 is provided with a flange portion 23 formed in a substantially rectangular frame shape along the periphery of the opening 20. Slots 25 for holding the peripheral edge of the wafer W are formed on the inner side walls of the opposite side portions 21a, 21b (the left side portion and the right side portion as viewed from the opening 20 side in FIG. 4) across the internal space S. A plurality, for example, 25 pieces are provided. In each inner wall, each slot 25 is provided in a groove shape extending linearly from the opening 20 side toward the back portion 21e side, and is provided in parallel with each other at a predetermined interval. . The wafer W is carried into and out of the internal space S through the opening 20, and the peripheral edge portion of the wafer W is inserted into and out of the pair of slots 25 provided on both inner side walls from the opening 20 side. The both sides of the wafer W are stored in the internal space S while being held by the pair of slots 25. Therefore, by inserting one wafer W into each slot 25, up to 25 wafers W are placed in the internal space S in parallel with a predetermined interval in a substantially parallel posture. Can be stored side by side.

  In the carrier main body 21, the back portion 21 e facing the opening 20 with the internal space S interposed therebetween is closed. A gap is formed between the peripheral edge of the wafer W accommodated in each slot 25 and the inner surface of the back part 21e.

  As shown in FIGS. 1 and 2, the carrier mounting unit 10 has a predetermined number, for example, up to three carriers C arranged in a line in the Y-axis direction (substantially horizontal direction substantially perpendicular to the X-axis direction). A carrier mounting table 40 that can be mounted is provided. In addition, a predetermined number, for example, three gates 41 are provided in the boundary wall portion 15 side by side in the Y-axis direction. Each gate 41 communicates with the carrier mounting unit 10 side and the substrate transport unit 12 side, and is opened in a substantially rectangular shape that is slightly larger than the lid 22 of the carrier C and smaller than the flange 23. Yes. In such a configuration, each carrier C has the wafer W in the carrier C substantially horizontal and arranged vertically in the height direction (Z-axis direction, substantially vertical direction) of the opening 20 and the gate 41, and the flange portion. 23 is placed on the upper surface of the carrier mounting table 40 in a state in which 23 is in close contact with the side surface of the boundary wall portion 15 along the outer periphery of the gate 41. The opening 20 and the lid body 22 are arranged so as to face the side of the carrier C and face the inside of the gate 41.

  In addition, a shutter 42 that closes the gate 41 from the substrate transfer section 12 side is provided for each gate 41. As shown in FIG. 5, each shutter 42 has a box shape with one side opened, and the opening is formed slightly larger than the gate 41. The gate 41 is closed while the entire peripheral edge 42b of the opening is in close contact with the side surface of the boundary wall 15 (the surface on the substrate transport unit 12 side) along the outer periphery of the gate 41. . As shown in FIG. 6, each shutter 42 can be moved in the X-axis direction and the Z-axis direction by driving the shutter moving mechanism 43, respectively. Each shutter 42 is provided with a lid opening / closing mechanism 50 that opens and closes the lid 22 by switching between a locked state and an unlocked state of the lid 22 of the carrier C. By holding the lid 22 and moving it in the X-axis direction to open and close the opening 20, the opening 20 and the gate 41 can be communicated or blocked. Further, the lid body 22 is moved into the substrate transport section 12 through the gate 41, and the shutter 42, the lid body opening / closing mechanism 50 and the lid body 22 are moved integrally below the gate 41, whereby the opening 20, gate The wafer W can be moved between the internal space S of the carrier body 21 and the substrate transfer unit 12 via 41. Further, a suction nozzle 87 described later is attached to the shutter 42.

  As shown in FIGS. 1 and 2, a substrate transfer device 60 for transferring the wafer W is disposed in the substrate transfer unit 12. The substrate transfer device 60 includes a main body 61 and a transfer arm 62 that can hold a single wafer W in a substantially horizontal posture. The main body 61 is configured to be horizontally movable in the Y-axis direction and vertically movable in the Z-axis direction, and is rotatable in the XY plane (θ direction). The transfer arm 62 has a substantially flat plate shape oriented substantially in the horizontal direction, and is supported above the main body 61 by the main body 61, and is slidable in the XY plane relative to the main body 61. Yes.

  As shown in FIG. 7, a distal end member 65 is provided on the distal end side of the upper surface of the transfer arm 62, and a step portion 66 lower than the distal end member 65 is provided along the proximal end side of the distal end member 65. On the base end side of the upper surface of the transfer arm 62, a stepped portion 67 having a height substantially the same as the stepped portion 66 is provided. The wafer W is held on the upper surface side of the transfer arm 62 in such a state that two opposing portions of the lower surface peripheral edge portion are respectively placed on the step portions 66 and 67 and the end surface is in contact with the tip member 65. Further, the transfer arm 62 moves in the X-axis direction with the tip end side facing the gate 41 side, and as shown in FIG. 8, the carrier mounting is performed via each gate 41 in the open state and the opening 20 of the carrier C. The carrier body 21 mounted on the mounting table 40 can move forward and backward with respect to the internal space S. Further, the transfer arm 62 can enter a gap between the wafers W stored in the internal space S, and can lift and hold the wafer W held at an arbitrary height from below.

  The substrate transport device 60 can access each gate 41 and each delivery unit 101A, 101B provided in the processing unit 3 described later by appropriately moving the main body 61 in the Y-axis direction and the Z-axis direction. The transfer arm 62 can be moved to the position. The wafer W held by the transfer arm 62 can be transferred from the carrier mounting unit 10 side to the processing unit 3 side, and conversely from the processing unit 3 side to the carrier mounting unit 10 side.

As shown in FIG. 2, a fan filter unit (FFU) 70 that supplies a clean gas downflow into the substrate transfer unit 12 is provided at the ceiling of the substrate transfer unit 12. The gas supplied from the FFU 70 is, for example, an inert gas such as air or nitrogen (N ₂ ) gas. Although not shown, an exhaust path for exhausting the atmosphere in the substrate transfer unit 12 is connected to the bottom of the substrate transfer unit 12.

  As shown in FIG. 1, a pair of gas supply mechanisms 71 </ b> A and 71 </ b> B for supplying gas toward the internal space S of the carrier C are provided on the left and right sides of each gate 41 and the shutter 42 in the substrate transport unit 12. Each is provided.

  The gas supply mechanisms 71A and 71B have substantially symmetrical structures with respect to the XZ plane. As shown in FIG. 9, the gas supply mechanisms 71 </ b> A and 71 </ b> B are provided side by side on a substantially cylindrical cylindrical body 72 erected with its length direction directed in the Z-axis direction, and on the outer peripheral surface of each cylindrical body 72. , For example, a plurality of nozzles 74 having gas supply ports 73 for discharging an inert gas such as nitrogen gas.

  The cylinders 72 of the gas supply mechanisms 71A and 71B are respectively provided on the left and right sides of the gate 41 when viewed from the substrate transfer device 60 side outside the gate 41. The upper end of each cylinder 72 is closed, and a gas supply pipe 81 communicating with the internal space of the cylinder 72 is connected to the lower end of the cylinder 72. The gas supply pipe 81 is connected to a gas supply source 82 provided outside the substrate transfer unit 12. A gas supply path 83 for supplying the gas supplied from the gas supply source 82 to the gas supply port 73 is configured by the internal flow path of the gas supply pipe 81 and the internal space of the cylindrical body 72. The gas supply pipes 81 of the gas supply mechanisms 71A and 71B are joined together and connected to a gas supply source 82, and an opening / closing valve 84 is interposed at the joining portion. The on-off valve 84 is opened and closed by a control command from the controller 85. When the on-off valve 84 is opened, gas is discharged from all the gas supply ports 73 of the gas supply mechanisms 71A and 71B simultaneously through the gas supply paths 83 of the gas supply mechanisms 71A and 71B. Yes. The gas supplied from the gas supply source 82 to each gas supply port 73 is an inert gas such as nitrogen gas and is sufficiently cleaned.

  Each gas supply port 73 has a substantially circular shape, for example, and opens at the tip of each nozzle 74. A plurality of, for example, 26 gas supply ports 73 are arranged in a straight line vertically along the Z-axis direction in the vicinity of both left and right sides in the width direction (Y-axis direction) of the opening 20 and the gate 41. Arranged at intervals. The interval between the gas supply ports 73 may be substantially the same as, for example, the interval between the slots 25 in the carrier body 21, that is, the interval between the wafers W housed in the carrier body 21.

  Further, each nozzle 74 and gas supply port 73 are provided along a surface facing the gate 41 and the opening 20 side, and the inside of the carrier main body 21 from the outside of the gate 41 and the opening 20 (on the substrate transport unit 12 side). The direction is toward the space S and the direction of supplying gas in a substantially horizontal direction. Each gas supply port 73 of the gas supply mechanism 71A provided on the left side of the gate 41 when viewed from the substrate transfer device 60 side is right when viewed from the substrate transfer device 60 side toward the internal space S side from the outside of the opening 20. Each gas supply port 73 of the gas supply mechanism 71B provided on the right side of the gate 41 as viewed from the substrate transfer apparatus 60 side is supplied from the outside of the opening 20 to the internal space. The gas is supplied in a direction inclined toward the left as viewed from the substrate transfer device 60 side as it goes toward the S side. In addition, the gas supply direction of each gas supply port 73 of the gas supply mechanism 71A and the gas supply direction of each gas supply port 73 of the gas supply mechanism 71B are substantially symmetric with respect to the XZ plane. It has become.

  Further, as shown in FIG. 10, the gas supply port 73 provided at the uppermost position opens to a height between the slot 25 provided at the uppermost position and the inner side surface of the upper portion 21c of the carrier body 21. It is directed in the direction of supplying gas between the wafer W accommodated in the uppermost part and the upper part (the ceiling part in FIG. 10) 21c of the carrier body 21. The respective gas supply ports 73 therebelow are opened so as to correspond to the heights between the slots 25 one by one, and gas is supplied to the gaps between the wafers W accommodated in the slots 25. Oriented to the direction. The gas supply port 73 provided in the lowermost part has an opening having a height between the slot 25 provided in the lowermost part and the lower part (bottom part) 21d of the carrier body 21, and is stored in the lowermost part. The direction is directed to supply gas between the wafer W and the side portion 21d. Therefore, even for the wafer W inserted into the slot 25 at any height, the gas is supplied from the gas supply port 73 to the space above and below the wafer W, and the gas flows along the upper and lower surfaces of the wafer W. It has become the arrangement.

  Outside the opening 20 and the gate 41, a suction nozzle 87 having a suction port 87a that forcibly sucks the atmosphere from the internal space S is provided between the gas supply mechanisms 71A and 71B. As shown in FIG. 6, the suction nozzle 87 is attached to, for example, the outer surface of the shutter 42, and is moved integrally with the shutter 42 by driving the shutter moving mechanism 43, so that the opening 20 and the gate 41 are moved. Move up and down relatively. The suction nozzle 87 is erected upward, and the upper end portion of the suction nozzle 87 is bent toward the opening 20 at a position higher than the upper edge portion of the shutter 42. An open end of the bent tip portion of the suction nozzle 87 is a suction port 87a.

  As shown in FIG. 9, the suction port 87 a is opened, for example, in an elongated rectangular shape along the width direction of the opening 20 and the gate 41. On the other hand, the lower end portion of the suction nozzle 87 is connected to a suction mechanism 89 such as a pump or an ejector provided outside the substrate transport unit 12 via a suction path 88 or the like.

  As shown in FIG. 1, the processing unit 3 includes a transfer unit group 92, a cleaning unit group 93, a heating / cooling unit group 94, and a control / utility around a main wafer transfer mechanism 91 disposed in the center. A unit group 95 is arranged.

  As shown in FIG. 3, the main wafer transfer mechanism 91 includes three transfer arms 91a, 91b, 91c that hold the wafers W one by one in a substantially horizontal posture. These transfer arms 91a to 91c are selectively accessed to transfer units 101A and 101B, substrate cleaning units 110A to 110D, cooling unit 111, and heating units 112A to 112C, which will be described later, and wafers W are carried into and out of each unit. Can be done.

  The transfer unit group 92 is disposed between the substrate transfer unit 12 and the main wafer transfer mechanism 91, and the transfer units 101A and 101B are stacked in this order from the bottom.

  The cleaning unit group 93 is disposed on the left side of the main wafer transfer mechanism 91, and two substrate cleaning units 110A and 110B are arranged in the X-axis direction on the lower stage, and two substrate cleaning units on the upper stage. 110C and 110D are arranged side by side in the X-axis direction. Each of the substrate cleaning units 110 </ b> A to 110 </ b> D is configured to hold, for example, the wafer W substantially horizontally and supply the cleaning liquid to the upper surface of the wafer W for cleaning.

  The heating / cooling unit group 94 is disposed on the opposite side of the delivery unit group 92 with the main wafer transfer mechanism 91 interposed therebetween, and the cooling unit 111 and the heating units 112A, 112B, 112C are stacked in this order from the bottom. Yes.

  As shown in FIG. 1, the control / utility unit group 95 includes an electrical unit 121 that is a power source of the processing system 1, a machine control unit 122 that controls operations of various devices in the processing system 1, and a substrate cleaning unit. A chemical solution storage unit 123 that stores a predetermined cleaning chemical solution to be fed to 110A to 110D is provided.

  On the ceiling of the processing unit 3, an FFU 170 for downflowing clean gas is disposed in the processing unit 3. The gas supplied from the FFU 170 is, for example, an inert gas such as air or nitrogen gas.

  Next, a processing process of the wafer W using the processing system 1 configured as described above will be described. First, a carrier C storing a plurality of wafers W not yet processed in the processing system 1 is transferred from the outside of the processing system 1 by a carrier transfer device (not shown) and mounted on the carrier mounting unit 10. The On the carrier mounting portion 10, a carrier C storing the unprocessed wafer W and an empty carrier C ′ for storing the processed wafer W are mounted. When the carrier C (C ′) is placed on the carrier placing table 40, the gate 41 corresponding to the carrier C (C ′) is kept closed from the substrate transport unit 12 side by the shutter 42. . Further, the carrier C (C ′) is in a state where the opening 20 is closed by the lid 22. In the state where the gate 41 is closed by the shutter 42, the suction nozzle 87 waits in a state where the suction port 87a is disposed above the opening 20 and the gate 41 as shown by a two-dot chain line in FIG. It has been made. Further, the suction of the suction mechanism 89 is stopped.

  The wafers W in the carrier C placed on the carrier placing table 40 are housed one by one in each slot 25, and are housed in a state of being arranged vertically. When the carrier C is placed, the lid 22 is unlocked by the lid opening / closing mechanism 50 and removed from the opening 20, and the shutter 42 and the lid 22 are moved below the gate 41 by driving the shutter moving mechanism 43. Thus, when the shutter 42 is lowered to the standby position below the gate 41 and the opening 20 and the gate 41 are communicated with each other, as shown by the solid line in FIG. It is provided at a height lower than the gas supply port 75 provided below, and is disposed so as to face the opening 20 and the gate 41 at a position close to the lower edge of the opening 20 and the lower edge of the gate 41. Is done.

  Next, gas supply by each gas supply mechanism 71A, 71B is started and the suction mechanism 89 is operated to start suction by the suction port 87a. The gas supplied from the gas supply ports 73 of the gas supply mechanisms 71A and 71B provided outside the opening 20 and the gate 41 enters the internal space S through the opening 20 and the gate 41 as shown in FIG. Between the wafer W housed in the uppermost part and the upper part 21c of the carrier body 21, between the wafers W, the wafer W housed in the lowermost part and the lower part 21d of the carrier body 21 Each flows in between. Above and below each wafer W, the gas flows along the upper and lower surfaces of the wafer W from the opening 20 side toward the back portion 21e. The gas thus supplied to the upper surface and the lower surface of the wafer W flows toward the suction port 87 a by being pushed by the gas continuously supplied from the gas supply port 73 and by the suction force of the suction mechanism 89. . That is, on the back portion 21e side, the wafer W is directed downward from the upper surface side of the wafer W through a gap between the peripheral portion on the back side of the wafer W and the inner surface of the back portion 21e. It descends along the gaps between the peripheral edge of each lower wafer W and the inner surface of the inner part 21 e and descends to the side part 21 d which is the bottom of the carrier body 21. Thereafter, under the wafer W accommodated in the lowermost slot 25, the wafer flows from the rear portion 21 e side to the opening 20 side along the side portion 21 d and is discharged from the internal space S through the opening 20 and the gate 41. 20 and the suction port 87a provided outside the lower end of the gate 41. The atmosphere sucked into the suction port 87 a passes through the suction nozzle 87, the suction path 88, and the suction mechanism 89 and is discharged to the outside of the processing system 1.

  In this way, by forming a lateral flow of gas along the upper and lower surfaces of each wafer W, even if particles adhere to the upper and lower surfaces of the wafer W, the particles are blown away by the gas and together with the gas. Washed away. Therefore, the wafer W in the internal space S can be cleaned. Further, since a gas flow along the inner surface of the carrier body 21 is also formed, particles adhering to the inner surface of the carrier body 21 are also blown away by the gas and removed. Therefore, the inner surface of the carrier body 21 can also be cleaned.

  Further, gaseous pollutants accumulated in the internal space S can be discharged. Furthermore, the atmosphere of the internal space S can be replaced with the atmosphere of the gas supplied from the gas supply port 73. That is, the internal space S can be purged with gas. For example, by purging with an inert gas such as nitrogen, it is possible to prevent a natural oxide film from being generated on the wafer in the internal space S. Therefore, it is possible to prevent the quality of the wafer W from deteriorating.

  In addition, by supplying gas uniformly from both sides of the wafer W in the internal space S by the gas supply ports 73 arranged on the left and right sides of the opening 20, the gas can be easily supplied to the entire upper and lower surfaces of the wafer W. , Particles can be efficiently removed from the entire wafer W. Furthermore, the atmosphere between the wafers W can be pushed out efficiently. When the wafer W is unloaded from the internal space S or loaded into the internal space S through the opening 20, the gas supply mechanisms 71A and 71B do not get in the way, and the wafer W can be loaded and unloaded smoothly.

  Further, by forcibly exhausting the internal space S by the suction port 87a, it becomes easy to reliably form a gas flow in the internal space S. Furthermore, the flow velocity of the gas in the internal space S is increased, particles adhering to the wafer W and the carrier body 21 are blown off more effectively, and the atmosphere in the internal space S is more effectively discharged, so that the internal space S The inside pollutants (gaseous pollutants, particles, etc.) and atmosphere can be efficiently recovered. Further, by attracting and actively collecting contaminants and atmosphere from the internal space S, it is possible to prevent the contaminants and atmosphere discharged from the internal space S from leaking or diffusing into the substrate transport unit 12. it can.

  What is necessary is just to set suitably the supply flow rate of the gas supplied from each gas supply port 73 so that the airflow in the internal space S is formed suitably. For example, the supply flow rate of the gas supply port 73 provided at the uppermost position may be set to be the largest, and the supply flow rate may be gradually decreased toward the gas supply port 73 provided at the lower position.

  Thus, when the gas is supplied to the internal space S of the carrier C, the transfer arm 62 of the substrate transfer device 60 is passed through the gate 41 and the opening 20 to enter the internal space S of the carrier C, and the internal space S Under the wafer W. When the transfer arm 62 is raised and a single wafer W is placed on the upper surface of the transfer arm 62 and held, the transfer arm 62 is retracted in the X-axis direction, and the peripheral edge of the wafer W is retracted in the slots 25 on both sides. While doing so, the wafer W is moved. In this way, one wafer W is extracted from the slot 25 by the substrate transfer device 60 and is transferred from the internal space S through the opening 20 and the gate 41.

  The wafer W unloaded from the carrier C is transferred by the substrate transfer device 60, transferred to the lower transfer unit 101A shown in FIG. 3, and taken out from the transfer unit 101A by the main wafer transfer mechanism 91, and then the substrate cleaning unit 110A. To any of 110D. Then, cleaning processing is performed in the substrate cleaning units 110A to 110D. Here, the wafer W is in a clean state with less adhesion of particles by supplying gas. Therefore, it is possible to suppress the processing unit 3 from being contaminated by particles adhering to the wafer W.

  After the cleaning process, the wafer W is unloaded from the substrate cleaning units 110A to 110D by the main wafer transfer mechanism 91, is loaded into any of the heating units 112A to 112C, and is dried by heating. Then, it is cooled by the cooling unit 111 as necessary.

  After completion of the drying process or the cooling process, the wafer W is unloaded from the heating unit 112A (112B, 112C) or the cooling unit 111 and transferred to the transfer unit 101B. Then, it is taken out from the delivery unit 101B by the transfer arm 62 of the substrate transfer device 60. Thus, the processed wafer W that has been subjected to the predetermined processing in the processing unit 3 is held on the upper surface of the transfer arm 62 in a substantially horizontal posture and transferred into the substrate transfer unit 12.

  In the substrate transfer unit 12, the wafer W is transferred in front of the right gate 41 corresponding to the mounting position of the empty carrier C '. In a state where the cover 22 and the shutter 42 of the carrier C ′ are removed from the opening 20 and the gate 41, the transfer arm 62 holding the wafer W is passed through the gate 41 and the opening 20, and the peripheral portion of the wafer W is disposed on both sides. The wafer W is carried into the internal space S while being allowed to enter along the slots 25. When the wafer W is stored in the internal space S, the transfer arm 62 is lowered and transferred to the slots 25 on both sides. Then, the transfer arm 62 is retracted below the wafer W and returned into the substrate transfer unit 12 through the opening 20 and the gate 41.

  As described above, the unprocessed wafers W in the carrier C are transferred to the processing unit 3 one by one, and the processed wafers W are stored one by one in the carrier C ′. Note that the container for storing the processed wafer W may not be the right carrier C ′, but may be the same carrier C as the carrier stored when the wafer W is loaded into the processing system 1, for example. Thus, when 25 processed wafers W are stored in the internal space S of the carrier C ′ (C), the opening 20 of the carrier C ′ (C) is closed by the lid 22 to be locked. Thereafter, the carrier C ′ (C) is unloaded from the carrier mounting unit 10 to the outside of the processing system by a carrier transport device (not shown) and transported to the processing system or the like in the next process. As described above, a series of steps in the processing system 1 is completed.

  According to the processing system 1, by supplying gas from the opening 20 side of the carrier C toward the internal space S, and forming a gas flow along the upper surface and the lower surface of each wafer W in the internal space S, Particles adhering to the upper and lower surfaces of the wafer W and particles accumulated in the internal space S can be blown away, pushed away and discharged. Therefore, the wafer W can be cleaned by removing the particles. As a result, the amount of particles brought into the processing unit 3 together with the wafer W can be reduced. Accordingly, it is possible to prevent the cleanliness of the processing unit 3 from being lowered and perform the cleaning process and the like reliably. Further, by exhausting the internal space S while supplying an inert gas such as nitrogen, the internal space S of the carrier C can be brought into an inert gas atmosphere. Furthermore, it is not necessary to perform troublesome processing on the carrier C, and particles in the internal space S can be removed or purged with a simple structure. Therefore, the processing cost of the carrier C can be reduced.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to such embodiments. For example, in the above embodiment, the gas is supplied to the internal space S after the opening 20 of the carrier C is opened and before the unloading of the wafer W is started, but the unloading of the wafer W is started. Also, the gas may be supplied from each gas supply port 73 to the internal space S of the carrier C. Then, the wafer W accommodated in the internal space S can be further cleaned. Further, if the gas is supplied while the wafer W is carried out of the internal space S by the transfer arm 62, the particles adhering to the wafer W being carried out can be suitably blown off. Furthermore, it is possible to clean the transfer arm 62 by bringing the gas flow into contact with the transfer arm 62 and blowing off particles adhering to the transfer arm 62. Further, the gas may be supplied while the transfer arm 62 enters the internal space S. Also in this case, the particles adhering to the transfer arm 62 can be blown off to clean the transfer arm 62.

  Further, if an inert gas such as nitrogen is supplied from each gas supply port 73 to the internal space S while the gate 41 and the opening 20 are opened, the atmosphere and particles in the substrate transfer unit 12 may cause the gate 41 and the opening 20 to pass through. It is possible to prevent the carrier C from entering the internal space S, and even if it enters, the carrier C can be immediately discharged from the internal space S. Accordingly, the interior space S can be kept clean, and particles can be prevented from adhering to the inner walls of the wafer W and the carrier C in the interior space S. Further, it is possible to prevent the oxidizing atmosphere in the substrate transfer unit 12 from entering the internal space S of the carrier C, and to maintain the inside of the internal space S in an inert gas atmosphere such as nitrogen. That is, it is possible to prevent the oxidizing atmosphere from coming into contact with the wafer W in the internal space S, and to prevent the generation of a natural oxide film in the wafer W waiting in the internal space S.

  In the above embodiment, the gas is supplied to the internal space S of the carrier C that stores the unprocessed wafer W. However, the gas is supplied to the internal space S of the carrier C ′ (C) that stores the processed wafer W. Thus, a gas flow is formed along a path substantially similar to the gas flow in the carrier C shown in FIG. 10, and contaminants, atmosphere, gas, etc. in the internal space S of the carrier C ′ (C) are removed. You may make it discharge. In this case, for example, particles that have adhered to the wafer W before being carried into the carrier C ′ (C) in the transfer path after the cleaning process are blown off by the gas flow in the internal space S and removed. Can be cleaned. Therefore, the reliability of the cleaning process can be improved. Further, if an inert gas such as nitrogen is supplied as a gas to make the inner space S of the carrier C ′ (C) an inert gas atmosphere, a natural oxide film is generated on the surface of the processed wafer W. It can be prevented from progressing. By closing the opening 20 in a state where the contaminants and the oxidizing atmosphere are removed from the internal space S of the carrier C ′ (C), the wafer W in the carrier C ′ (C) can be prevented from being contaminated.

  Further, the gas may be supplied to the internal space S of the empty carrier C ′ (or the empty carrier C after all the wafers W are unloaded) before the wafer W is loaded. Then, the inside of the carrier body 21 can be surely cleaned. The wafer W can be stored in the carrier C ′ (C) having a high cleanliness, and the wafer W can be prevented from being contaminated by transferring particles from the carrier C ′ (C). If the gas supplied from the gas supply port 73 is an inert gas such as nitrogen, for example, the processed wafer W is placed in the internal space S of the carrier C ′ (C) in an inert gas atmosphere in advance. It can be stored, and it can be suppressed that a natural oxide film is generated on the wafer W stored in the internal space S.

  Further, an inert gas such as nitrogen may be supplied from the gas supply port 73 even after the loading of the wafer W into the carrier C ′ (C) is started. Then, by supplying gas to the internal space S of the carrier C ′ (C) and the wafer W stored in the internal space S and cleaning it, the internal space S and the wafer W to be loaded later are already stored. It is possible to prevent particles from being transferred from and adhered to the wafer W. Further, the oxidizing atmosphere in the substrate transfer unit 12 can be prevented from entering the internal space S of the carrier C ′ (C), and the inside of the internal space S can be maintained in an inert gas atmosphere. That is, it is possible to prevent the oxidizing atmosphere from coming into contact with the processed wafer W accommodated in the internal space S, and to prevent the generation of a natural oxide film from proceeding. Further, if the gas is supplied while the wafer W is carried into the internal space S by the transfer arm 62, the particles can be suitably blown off from the loaded wafer W, and the gas flow is brought into contact with the transfer arm 62 to carry the transfer. Particles adhering to the arm 62 can be blown away to clean the transfer arm 62. Further, after storing the wafer W, the gas may be supplied to the transfer arm 62 while the transfer arm 62 is moved out.

  In the above embodiment, the suction port 87a is disposed near the lower edge of the opening 20 for suction. However, the suction port 87a may be disposed at an arbitrary height for suction. For example, suction may be performed from a gap between the wafers W.

  For example, as shown in FIG. 11, while the lid 22 and the shutter 42 removed from the opening 20 and the gate 41 of the carrier C are lowered, the gas is supplied from the gas supply port 73 and the suction port 87a is connected to the lid. Suction may be performed while lowering the lens 22 and the shutter 42 by following the lowering. In the embodiment shown in FIG. 11, the closing member for closing the opening is the cover 22 of the carrier C and the shutter 42 of the gate 41 corresponding to the carrier C. The closing member raising / lowering mechanism for raising and lowering the closing member is the shutter moving mechanism 43.

  In this embodiment, the carrier C containing the unprocessed wafer W is placed on the carrier placing table 40, the lid 22 is held by the lid opening / closing mechanism 50 of the shutter 42, and as shown in FIG. When the body 22 and the shutter 42 begin to descend integrally, gas supply from the gas supply port 73 is started. Further, suction is started while the suction port 87a is lowered to a height facing the opening 20 and the gate 41. Of the gases supplied from each gas supply port 73, the gas supplied from the gas supply port 73 located above the upper edge of the shutter 42 is from a portion opened above the upper edge of the shutter 42. It flows into the internal space S through the gate 41 and the opening 20. Then, it flows toward the back portion 21e along the upper and lower surfaces of the wafer W positioned at a height above the suction port 87a, and from the gap between the wafers W positioned at the height of the suction port 87a toward the opening 20 side. The liquid is sucked and discharged by the suction port 87a. The suction port 87 a sucks the atmosphere in the internal space S at a position higher than the shutter 42 while descending following the lowering of the shutter 42. Thus, while supplying gas from the gas supply port 73 and performing suction by the suction port 87a, the shutter 42, the lid 22 and the suction nozzle 87 are lowered, and the opening 20 and the gate 41 are completely opened. In this way, the pollutant in the internal space S can be efficiently recovered. In addition, it is possible to quickly collect the contaminant before it flows out to the substrate transport unit 12 and reliably prevent the contaminant from flowing out to the substrate transport unit 12.

  Further, the opening 42 and the gate 41 are not completely opened, but only a part is opened from above, and the shutter 42, the lid 22 and the suction nozzle 87 are lowered each time the wafers W are carried out from above one by one. Anyway. In this case, the lower part of the internal space S in which the wafer W that has not yet been unloaded is covered with the shutter 42 and the lid 22, so that contaminants flow out from the lower part covered by the shutter 42 to the substrate transfer unit 12. Can be prevented.

  When the suction nozzle 87 is attached to the shutter 42 in this way, it is not necessary to separately provide a suction nozzle raising / lowering mechanism, and space can be saved. Further, it is not necessary to control the driving of the suction nozzle lifting mechanism in accordance with the movement of the shutter 42, and the control becomes simple. Further, the suction nozzle 87 may not be attached to the shutter 42. For example, as shown in FIG. 12, a suction nozzle lifting mechanism 180 that lifts and lowers the suction nozzle 87 may be provided separately, and the suction port 87 a may be lifted and lowered by driving the suction nozzle lifting mechanism 180. In this case, a control unit (not shown) for controlling the driving of the shutter moving mechanism 43 and the suction nozzle raising / lowering mechanism 180 is provided so that the suction port 87a moves downward in synchronization with the lowering of the shutter 42 according to a command from the control unit. Suction may be performed while controlling the pressure.

  In the above embodiment, the suction nozzle 87 can be moved up and down integrally with the shutter 42, or can be moved up and down by driving the suction nozzle lifting mechanism 180. Of course, the suction nozzle 87 may be fixed to the opening 20 and the gate 41. good. For example, as shown in FIGS. 9 and 10, a suction nozzle 87 is erected below the opening 20 and the gate 41, and the suction port 87 a provided at the upper end of the suction nozzle 87 is connected to the opening 20 and the gate 41. You may fix and install in the state opened toward the lower edge part of the opening 20 and the gate 41 on the outer side.

  The cylinder 72 of each gas supply mechanism 71A, 71B may be configured to be movable relative to the opening 20 and the gate 41. For example, when the opening 20 and the gate 41 are opened and closed by the lid 22 and the shutter 42, the cylinders 72 of the gas supply mechanisms 71A and 71B are put on standby at positions separated from the shutter 42 and the gate 41, and the lid 22 and the shutter 41 are opened. When gas is supplied from the gas supply port 73 by moving 42 below the opening 20 and the gate 41, the cylinder 72 of each gas supply mechanism 71A, 71B is brought close to a position near the opening 20 and the gate 41. The gas supplied from each gas supply port 73 may easily flow into the internal space S.

  The supply direction of the gas supplied from the gas supply port 73 of each gas supply mechanism 71A, 71B may be variable. For example, as shown in FIG. 13, in the gas supply mechanism 71A, support members 191 and 192 for supporting the upper end portion and the lower end portion of the cylindrical body 72 through bearings or the like so as to be rotatable around the central axis in the Z-axis direction are provided. , For example, fixed to the boundary wall 15. Further, a drive pulley 194 that rotates around the central axis in the Z-axis direction by driving the motor 193 is provided in the vicinity of the lower end of the cylinder 72, and is wound around the drive pulley 194 and the lower end of the cylinder 72. The provided timing belt 195 is provided. That is, when the driving pulley 194 is rotated by driving the motor 193 and the timing belt 195 is rotated, the cylindrical body 72 is rotated, and the direction of each nozzle 74 is changed in a plan view and discharged from the gas supply port 73. The direction of the gas is changed. Note that the rotation direction of the motor 193 is variable, and the cylindrical body 72 can be rotated clockwise or counterclockwise in a plan view, and the gas supply direction can be repeatedly reciprocated to change. . The gas supply mechanism 71B also has the same configuration as the gas supply mechanism 71A, and includes support members 191, 192, a motor 193, a drive pulley 194, and a timing belt 195, and can change the gas supply direction. Therefore, the gas supply direction of the gas supply mechanism 71A and the gas supply direction of the gas supply mechanism 71B can be changed independently of each other. With the above configuration, by supplying gas while changing the gas supply direction from each gas supply port 73, the gas can be supplied uniformly over the entire upper and lower surfaces of the wafer W. In addition, the particles can be suitably blown from the entire lower surface.

  For example, when supplying gas while lowering the lid 22 and the shutter 42 (see FIG. 11), the gas supply direction from each gas supply port 73 is changed until the opening 20 and the gate 41 are completely opened. If the opening 20 and the gate 41 are completely opened after that, the rotation of each cylinder 72 may be started and the gas supply direction from each gas supply port 73 may be changed. Thereby, the contaminant in the internal space S can be discharged reliably.

  Further, the gas supply from the gas supply port 73 of the gas supply mechanism 71A and the gas supply from the gas supply port 73 of the gas supply mechanism 71B may be performed simultaneously, but from the other while one is stopped. Alternatively, it may be performed alternately. Further, the gas supply direction from the gas supply port 73 of the gas supply mechanism 71A and the gas supply direction from the gas supply port 73 of the gas supply mechanism 71B are not changed at the same time, and one of them is set in a certain direction. Alternatively, the other may be changed so as to change the other. By doing so, it is possible to prevent the gas supplied from the gas supply mechanism 71A and the gas supplied from the gas supply mechanism 71B from colliding with each other, thereby preventing the airflow from being disturbed. It becomes easy to discharge | emit smoothly and efficiently from internal space S of '). For example, as shown in FIG. 14, the gas supply direction from the right gas supply mechanism 71B is first maintained at a constant direction, while the other gas supply mechanism 71A rotates the cylinder 72 while changing the supply direction. The gas is supplied, and then the rotation of the cylinder 72 of the gas supply mechanism 71A is stopped to make the supply direction constant, the rotation of the cylinder 72 is started in the other gas supply mechanism 71B, and the gas is supplied while changing the supply direction. Should be supplied.

  Further, as shown in FIG. 15, the gas supply port 73 may be directed to the outside opposite to the opening 20, and the gas may be supplied from the opening 20 side toward the outside of the opening 20. Then, outside the opening 20, the unprocessed wafer W that is unloaded from the internal space S through the gate 41 and the opening 20, the processed wafer W that is loaded into the internal space S, and a transfer that holds the wafer W. Gas is supplied to the arm 62, the transfer arm 62 that retreats from the internal space S, and the transfer arm 62 that enters the internal space S, and the lateral gas that flows outward from the opening 20 side along the wafer W and the transfer arm 62. A flow can be formed. Therefore, particles adhering to the wafer W or the transfer arm 62 can be blown off to the outside of the opening 20 by gas and removed.

  In such a configuration, for example, after opening the opening 20 and before unloading the wafer W, the gas supply port 73 faces the opening 20 so that a gas flow is formed in the internal space S. While the gas supply port 73 is carried out from the internal space S, the gas supply port 73 faces the outside of the opening 20, and the gas flow along the wafer W and the transfer arm 62 is formed outside the opening 20. The direction may be switched. Further, for example, while the processed wafer W is carried into the internal space S of the carrier C ′ (C), the gas supply port 73 faces the outside of the opening 20, and along the wafer W and the transfer arm 62 outside the opening 20. After the wafer W is accommodated and before the opening 20 is closed, the gas supply port 73 is directed toward the opening 20 so that the gas flow is formed in the internal space S. It may be switched to. In this way, if gas is supplied to the processed wafer W outside the opening 20, it is possible to prevent particles from being stored in the internal space S and to reliably contaminate the carrier C ′ (C). Can be prevented.

  Further, for example, if the direction of each gas supply port 73 is changed while the gate 41 and the opening 20 are opened, and the gas is continuously supplied from the opening 20 side to the outside of the opening 20, the inside of the substrate transfer unit 12 can be obtained. Can be prevented from entering the internal space S of the carrier C (C ′).

  The supply flow rate of the gas supplied from each gas supply port 73 may be variable. For example, a flow rate adjusting valve may be provided in the gas supply path 83 of each gas supply mechanism 71A, 71B. The supply flow rate may be appropriately adjusted according to the number of wafers W stored in the internal space S, the pitch between the wafers W, the gas supply direction, and the like. Further, for example, when gas supply and suction are performed while the lid 22 and the shutter 42 are lowered (see FIG. 11), each gas supply is performed as the lid 22 and the shutter 42 are lowered with respect to the opening 20 and the gate 41. The supply flow rate of the gas supplied from the port 73 may be gradually increased to maximize the supply flow rate of the gas when the opening 20 and the gate 41 are completely opened. If it does so, according to the volume of the space where gas flows in the internal space S, a sufficient quantity of gas for discharge | emission of a pollutant can be supplied, and a pollutant can be reliably discharged | emitted from the internal space S. . Further, the suction force of the suction mechanism 89 can be adjusted, and the flow rate sucked into the suction port 87a may be variable.

  In the above embodiment, the gas supply port 73 is arranged on the both sides of the opening 20 and the gate 41 outside the opening 20 and the gate 41, but the arrangement of the gas supply port 73 is not limited thereto. For example, it may be arranged only on one side of the opening 20 and the gate 41. Further, the number of gas supply ports 73 and the number of wafers W stored in the carriers C and C ′ are not limited to the numbers shown in the embodiment, and can be any number.

  In the above embodiment, the carriers C, C storing the unprocessed wafers W are placed on the leftmost side or the center of the carrier placing table 40, and the empty carrier C ′ is placed on the rightmost side of the carrier placing table 40. However, the present invention is not limited to this configuration, and the carriers C and C ′ can be placed at arbitrary positions. Further, the number of carriers C and C ′ to be placed is not limited to the number shown in the embodiment.

  In the above embodiment, the gas supplied from each gas supply port 73 to the internal space S of the carriers C and C ′ is an inert gas, but is not limited thereto. In addition, the gas supplied from each gas supply port 73 to the internal space S of the carriers C and C ′ may be ionized (charged). In this case, the particles can be neutralized by spraying the ionized gas supplied from each gas supply port 73 to the particles charged by static electricity. Therefore, particles adhering to the wafer W, the carrier main body 21 and the transfer arm 62 due to electrostatic force can be easily removed from the wafer W, the carrier main body 21 and the transfer arm 62. For example, each nozzle 74 described above may be provided with an ionization function for ionizing a gas, and the gas may be supplied from the gas supply port 73 after being ionized when passing through the nozzle 74.

  The structure of the process part 3 is not limited to what performs the washing | cleaning shown in embodiment. The present invention can also be applied to a system that performs processing other than cleaning, such as film formation processing, on the wafer W.

  The substrate in the present invention is not limited to a silicon wafer, and may be any substrate, for example, a glass substrate for LCD, a photomask substrate, a CD substrate, or the like. Therefore, the shape of the substrate is not limited to a substantially disk shape, and may be any shape, for example, a substantially rectangular plate shape.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various changes and modifications can be conceived within the scope of the technical idea described in the claims. It is understood that it belongs to.

  The present invention can be applied to, for example, a processing system for processing a substrate and a substrate processing method.

It is a schematic plan view explaining the structure of the processing system concerning this Embodiment. It is a schematic side view explaining the structure of a processing system. It is a schematic longitudinal cross-sectional view explaining the structure of a process part. It is a schematic perspective view of a carrier. It is a schematic cross-sectional view explaining arrangement | positioning of the carrier and shutter with respect to a gate. It is a schematic side view explaining operation | movement of a suction nozzle and a shutter. It is a top view of a conveyance arm. It is a schematic side view explaining the structure and operation | movement of a conveyance arm. It is a schematic perspective view explaining the structure of a gas supply mechanism. It is the schematic longitudinal cross-sectional view which showed the flow of the gas supplied from a gas supply mechanism. It is a schematic side view explaining a method of performing suction while lowering the shutter. It is a schematic side view concerning embodiment provided with the nozzle raising / lowering mechanism. It is a schematic perspective view concerning embodiment which made the supply direction of the gas from a gas supply port variable. It is the schematic cross-sectional view which showed the state which made the supply direction of the gas from one gas supply mechanism constant, and changed the gas supply direction of the other gas supply mechanism. It is a schematic side view explaining the state which made the supply direction of the gas from a gas supply port the direction which goes outside from an opening side.

Explanation of symbols

C (C ') Carrier S Internal space W Wafer 1 Processing system 3 Processing unit 20 Opening 21 Carrier body 25 Slot 41 Gate 60 Substrate transfer device 62 Transfer arm 71A, 71B Gas supply mechanism 72 Cylindrical body 73 Gas supply port 87a Suction port

Claims (12)

A processing system for processing a substrate,
A processing unit for processing a substrate; and a mounting table for mounting a storage container for storing a plurality of substrates.
The storage container is placed in a state in which the substrates in the storage container are arranged horizontally and vertically, and an opening for loading / unloading the substrate into / from the storage container is directed to the side of the storage container,
A plurality of gas supply ports for supplying gas are provided outside the opening,
Each gas supply port is oriented in the direction of supplying gas horizontally between the substrates in the storage container ,
A suction port for sucking the atmosphere in the storage container is provided outside the opening,
A closing member that closes the opening; and a closing member lifting mechanism that lifts and lowers the closing member relative to the opening;
The processing system according to claim 1, wherein the suction port can be moved up and down following the closing member while being disposed at a position higher than the closing member . The processing system according to claim 1, wherein the gas supply ports are provided on both sides of the opening in the width direction of the opening. The processing system according to claim 1, wherein a supply direction of the gas supplied from the gas supply port is variable. The processing system according to claim 1, wherein the gas is an inert gas. The processing system according to claim 1, wherein the gas is ionized. A method of processing a substrate, comprising:
Placing the storage container containing the substrate in a state in which the substrate in the storage container is horizontal and with the opening of the storage container facing the side of the storage container;
An upper surface and / or a lower surface of the horizontally stored substrate is supplied by supplying gas from the outside of the opening toward the inside of the storage container while lowering a closing member for closing the opening relative to the opening. The gas is allowed to flow along the inner side of the container, and the gas flowing below the substrate on the back side of the storage container facing the opening is discharged to the outside of the opening.
When the discharged gas is sucked by a suction port provided outside the opening, the suction port is disposed at a position higher than the closing member, and the suction port is lowered while following the closing member. Aspirating with,
Unloading the substrate from the storage container through the opening;
A processing method, comprising: performing a predetermined process on the substrate carried out of the storage container. A method of processing a substrate, comprising:
Apply predetermined processing to the substrate,
The substrate subjected to the predetermined treatment is horizontally stored in the storage container through an opening provided on a side of the storage container,
An upper surface and / or a lower surface of the horizontally stored substrate is supplied by supplying gas from the outside of the opening toward the inside of the storage container while lowering a closing member for closing the opening relative to the opening. The gas is allowed to flow along the inner side of the container, and the gas flowing below the substrate on the back side of the storage container facing the opening is discharged to the outside of the opening.
When the discharged gas is sucked by a suction port provided outside the opening, the suction port is disposed at a position higher than the closing member, and the suction port is lowered while following the closing member. A processing method characterized by performing suction by means of A plurality of substrates are stored side by side in the storage container,
The processing method according to claim 6, wherein the gas is supplied between the substrates stored in the storage container. The processing method according to claim 6, wherein the gas is supplied while changing a supply direction of the gas. Supplying the gas from both sides of the opening in the width direction of the opening;
The processing method according to claim 9, wherein gas supply directions from both sides of the opening are alternately changed. The processing method according to claim 6, wherein the gas is an inert gas. The processing method according to claim 6, wherein the gas is ionized.

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