TWI770118B - Substrate processing system - Google Patents

Abstract

In a substrate processing system that comprises processing devices for processing substrates and in which substrate transport regions are provided for the purpose of transporting substrates to the processing devices, an object of the invention is to reliably prevent the adhesion of floating particles to the substrates. A substrate processing system, which comprises heat processing devices 40 and the like as processing devices that process substrates, and in which transport regions R1 to R4 are provided for the purpose of transporting wafers W to the processing devices, further comprises sound wave emission devices 60 and 70 which emit sound waves to prevent floating particles in the transport regions R1 to R4 from adhering to the substrates. The sound wave emission device 70 is provided, for example, in a region adjacent to a transport exit and entry port K2 for the wafer W in the heat treatment device 40 in the transport region R1.

Description

Substrate Processing System

The present invention relates to a substrate processing system including a processing apparatus for processing a substrate, and a substrate conveying area for conveying a substrate to the processing apparatus.

For example, in a photolithography process in a semiconductor device manufacturing process, an antireflection film or a photoresist film is formed by sequentially supplying a coating liquid on the surface of a semiconductor wafer (hereinafter referred to as a "wafer") serving as a substrate. A predetermined photoresist pattern is formed on the wafer by coating treatment, exposure treatment for exposing the photoresist film to a predetermined pattern, development treatment for developing the exposed photoresist film, and heat treatment for heating the wafer. Next, an etching process is performed using the photoresist pattern as a mask, and then a photoresist film removal process, etc. are performed to form a predetermined pattern on the wafer. These series of processes are performed in a coating and developing processing system that is a substrate processing system equipped with various processing apparatuses for processing wafers, a conveying mechanism for conveying wafers, and the like.

In addition, in the coating and developing processing system, for example, in order to keep the ambient air in the conveying area clean, the conveying area provided with the conveying mechanism is sealed, and the downdraft for supplying clean air is installed on the ceiling surface of the conveying area. ULPA (Ultra Low Penetration Air) filter (Patent Document 1). By setting the ULPA filter, the suspended particles in the handling area can flow to the bottom of the system and be discharged through the exhaust mechanism. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2012-154688

[Problems to be Solved by Invention]

In addition, with respect to the control of particles in the device, along with the miniaturization of the manufacturing process of semiconductor elements, the particles to be managed will be more stringent. Therefore, as a measure to prevent the suspended particles from adhering to the substrate, if only the ULPA filter is provided in the transfer area as in Patent Document 1, it becomes insufficient for the control of the particles in the apparatus. For example, even if a ULPA filter is installed, the flow direction of the air flow is blocked or changed by the operation of the wafer transfer device, etc., and the internal air flow that is different from the static state when the wafer transfer device is not operating may be generated temporarily downward. The suspended particles flow upward again. In this case, there may be particles that have not been discharged from the transfer area for a long time, and management of such particles is also necessary depending on the manufacturing process.

The present invention is made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing system including a processing apparatus for processing a substrate and a substrate conveying area for conveying a substrate to the processing apparatus, which can more reliably Prevent aerosols from adhering to the substrate. [How to solve the problem]

In order to achieve this object, the substrate processing system of the present invention includes a processing apparatus for processing substrates, and a substrate conveying area for conveying the substrates to the processing apparatus. Sonic launcher settings.

According to the present invention, since the substrate transfer area is provided with the sound wave emitting device for emitting sound waves, the suspended particles can be moved in the direction of the exhaust mechanism, so that the suspended particles can be more reliably prevented from adhering to the substrate.

The sound wave emitting device may also be provided in an area adjacent to the substrate carrying/carrying-out port of the processing apparatus in the substrate carrying area.

The above-mentioned substrate processing system may also include a boat mounting portion for mounting a wafer boat for accommodating substrates, and the sound wave transmitting device is arranged in the substrate transfer area and is opposite to the substrate import/export port of the wafer boat mounting portion. adjacent area.

The above-mentioned substrate processing system may further include a substrate conveying device that moves in the substrate conveying area to convey the substrate, and the acoustic wave emitting device is attached to the substrate conveying device.

The sound wave emitting device can also be supported in a swingable manner.

The substrate handling area may also have an adsorption area for adsorbing fine dust.

The sound waves emitted by the sound wave emitting device can also have directivity.

The substrate processing system may also include a device adjacent to the substrate transfer area, and the sound wave emitting device is disposed in the adjacent device in a manner of emitting sound waves toward the substrate transfer area.

The adjacent device may also be a accommodating device for accommodating substrates for substrate transfer, and the sonic emitting device is arranged at a position facing the substrate transport area and sandwiching the substrate therebetween when the substrate is accommodated in the accommodating device.

The sound wave emitting device can also cooperate with the action of the substrate carrying device that moves in the substrate carrying area to carry the substrate, and emits sound waves. [Inventive effect]

ADVANTAGE OF THE INVENTION According to this invention, in the substrate processing system provided with the processing apparatus which processes a board|substrate, and the board|substrate conveyance area which conveys a board|substrate to this processing apparatus, it becomes possible to prevent aerosol from adhering to a board|substrate more reliably.

(1st Embodiment) Hereinafter, embodiment of this invention is demonstrated. FIG. 1 is a schematic diagram for explaining the configuration of a substrate processing system according to a first embodiment of the present invention. 2 and 3 are a front view and a rear view schematically showing an outline of the internal configuration of each substrate processing system. 4 and 5 are a longitudinal sectional side view and a longitudinal sectional front view schematically showing an outline of the internal structure of each substrate processing system. In addition, in this specification and drawings, the same code|symbol is attached|subjected to the element which has substantially the same functional structure, and repeated description is abbreviate|omitted.

As shown in FIG. 1 , the substrate processing system 1 has a structure in which the following components are integrally connected: a boat station 10 for carrying in/out a boat C containing a plurality of wafers W; and a processing station 11 having a plurality of wafer pairs The circle W includes various processing apparatuses for performing predetermined processing; and the interface station 13 carries out the transfer of the wafer W between the exposure apparatuses 12 adjacent to the processing station 11 .

The boat station 10 is provided with a boat mount 20 . The boat mounting table 20 is provided with a plurality of boat mounting plates 21 , and the boat mounting plates 21 are used to mount the boat C when the boat C is carried in/out to the outside of the substrate processing system 1 . .

In the boat station 10 , a wafer transfer area L is provided between the boat mounting table 20 and the processing station 11 . As shown in FIG. 1 , in the wafer transfer area L, a wafer transfer device 23 that can move freely on a transfer path 22 extending in the X direction is provided. The wafer transfer device 23 is also freely movable in the vertical direction and around the vertical axis (theta direction), and can be moved between the wafer boat C on each wafer boat mounting plate 21 and the transfer device in the third block G3 of the processing station 11 to be described later. , transfer wafer W.

The processing station 11 is provided with a plurality of blocks including various devices, for example, the first to fourth blocks G1, G2, G3, and G4 are provided. For example, the first block G1 is provided on the front side of the processing station 11 (the negative side in the X direction in FIG. 1 ), and the second block G1 is provided on the back side (the positive side in the X direction in FIG. 1 ) of the processing station 11 . Block G2. In addition, a third block G3 is provided on the boat station 10 side of the processing station 11 (the negative Y direction side in FIG. 1 ), and the processing station 11 is provided on the interface station 13 side (the Y direction positive side in FIG. 1 ) , with the fourth block G4.

As shown in FIG. 2 , for example, in the first block G1 , a plurality of liquid processing apparatuses are arranged in order from the bottom, for example, the developing processing apparatus 30 is arranged in order to perform development processing on the wafer W; the lower anti-reflection film is formed The device 31 forms an anti-reflection film (hereinafter referred to as the “lower anti-reflection film”) on the lower layer of the photoresist film of the wafer W; the photoresist coating device 32 coats the wafer W with a photoresist liquid to form a photoresist film; The antireflection film forming apparatus 33 forms an antireflection film (hereinafter referred to as an "upper antireflection film") on the upper layer of the photoresist film of the wafer W.

For example, the development processing apparatus 30 , the lower anti-reflection film forming apparatus 31 , the resist coating apparatus 32 , and the upper anti-reflection film forming apparatus 33 are each arranged in a row of four in the horizontal direction. In addition, the number and arrangement of these developing treatment apparatuses 30 , lower antireflection film forming apparatuses 31 , photoresist coating apparatuses 32 , and upper antireflection film forming apparatuses 33 can be arbitrarily selected.

In the developing processing apparatus 30 , the lower anti-reflection film forming apparatus 31 , the resist coating apparatus 32 , and the upper anti-reflection film forming apparatus 33 , for example, spin coating of applying a predetermined coating liquid on the wafer W is performed. In spin coating, for example, a coating liquid is ejected onto the wafer W from a coating nozzle, and the wafer W is rotated so that the coating liquid is spread on the surface of the wafer W.

As shown in FIG. 3 , for example, in the second block G2 , the following devices are arranged in the vertical direction, etc.: a heat treatment device 40 , which performs heat treatment such as heating or cooling the wafer W; Adhesion between the liquid and the wafer W; the peripheral exposure device 42 exposes the outer peripheral portion of the wafer W. The number and arrangement of these heat treatment devices 40 , attachment devices 41 , and peripheral exposure devices 42 may be arbitrarily selected.

For example, in the 3rd block G3, the scaffold unit which laminated|stacked a plurality of conveyors etc. is provided. Moreover, in the 4th block G4, the scaffold unit which laminated|stacked a plurality of conveyors etc. is also provided.

As shown in FIG. 1, the wafer transfer area R is formed in the area|region enclosed by the 1st block G1 - the 4th block G4.

Moreover, as shown in FIG. 1, the wafer transfer apparatus 100 is installed in the side of the X direction positive direction side of the 3rd block G3. The wafer transfer apparatus 100 includes, for example, a transfer arm 100a that can move freely in the X direction, the θ direction, and the vertical direction. The wafer transfer device 100 moves up and down in a state where the wafer W is supported by the transfer arm 100a, and can transfer the wafer W to each transfer device in the third block G3.

In the interface station 13, a wafer transfer device 110 and a transfer device 111 are provided. The wafer transfer apparatus 110 has a transfer arm 110a that can move freely in the Y direction, the θ direction, and the vertical direction, for example. For example, the wafer transfer device 110 supports the wafer W on the transfer arm 110a, and can transfer the wafer W among the transfer devices, the transfer device 111, and the exposure device 12 in the fourth block G4.

The wafer handling area R is further explained. As shown in FIG. 4 , the wafer transfer area R is formed by stacking four transfer areas R1 to R4 in sequence from the bottom, and the transfer areas R1 to R4 are each formed so as to extend from the third block G3 side to the fourth block. It extends in the direction on the G4 side (positive direction of the Y direction in FIG. 4 ). As shown in FIG. 5 , on one side in the width direction of the conveyance regions R1 to R4, a liquid processing apparatus such as a photoresist coating apparatus 32 is arranged, and on the other side, for example, a heat treatment apparatus 40 is arranged. In some cases, the attachment device 41 or the peripheral exposure device 42 may be arranged instead of the heat treatment device 40 .

In addition, the conveyance areas R1 to R4 are respectively provided with: guides 301 extending along the longitudinal direction (Y direction in FIG. 5 ) of the conveyance areas R1 to R4 ; and conveyance arms A1 to A4 along the guides The carrier 301 is a transfer device for transferring the wafer W. The transfer arms A1 to A4 are used to transfer the wafers W between all the modules adjacent to the regions R1 to R4 in each of the transfer areas R1 to R4. The conveyance arms A1 to A4 (hereinafter, collectively referred to as conveyance arm A in some cases) have a frame 302 that moves along a guide 301, a lifter 303 that lifts and lowers along the frame 302, and a rotating body 304 that moves along the lifter 302. 303 ; and the wafer support portion 305 moves forward and backward on the rotating body 304 .

In order to form a coating film by spin coating, a liquid processing apparatus such as the photoresist coating apparatus 32 includes a spin chuck 201 that holds and rotates the wafer W, and a coating liquid supply nozzle (not shown) that supplies the coating liquid. In addition, the above-mentioned liquid processing apparatus includes a cup body 202 that surrounds the wafer W and recovers the coating liquid scattered from the wafer W, and a filter 203 that is provided above the cup body 202 and supplies cleanliness to the cup body 202 Air.

The heat treatment apparatus 40 includes a hot plate 401 for heating the wafer W, a plate member 402 for transferring and cooling the wafer W between the hot plate 401 and the transfer arms A1 to A4, and a rectifier plate 403 provided on the hot plate Above 401 ; the exhaust parts 404 and 405 exhaust the inside of the transfer areas R1 to R4 and the heat treatment device 40 . Below the heat processing apparatuses 40 which are the second, fourth, sixth, and eighth ones counted from the top, a fan device 406 for exhausting the conveyance areas R1 to R4 is provided.

Further explanation is given for the processing station 11 . The processing station 11 includes a housing 51 in which each of the above-described devices is accommodated, and the housing 51 is partitioned by each of the transfer areas R1 to R4 . The frame body 51 is provided with a fan filter unit (FFU) 52, and the FFU 52 is connected with a vertical duct 53 formed to extend up and down and span the conveyance areas R1 to R4. This vertical duct 53 is connected to a horizontal duct 54 extending along the longitudinal direction of each of the transfer areas R1 to R4.

The horizontal guide pipe 54 is provided above the edge part on the liquid processing apparatus side, such as the photoresist coating apparatus 32 in each conveyance area R1-R4. In addition, the horizontal duct 54 has a ULPA filter (not shown) inside. The air sent from the fan filter unit 52 directly or through the vertical duct 53 flows into the horizontal duct 54, is cleaned by the ULPA filter, and is supplied from the horizontal duct 54 to the bottom.

Moreover, below the horizontal duct 54, the partition plate 55 is provided. This partition plate 55 forms the ceiling surface of each conveyance area R1-R4, and has the gas diffusion chamber (not shown) which diffuses the air supplied from the horizontal duct 54 inside. Furthermore, on the bottom surface of the partition plate 55, a plurality of ejection ports are formed on the entire surface, and the plurality of ejection ports are used for ejecting the air diffused in the gas diffusion chamber to the conveyance regions R1-R4. The air which has passed through the ULPA filter of the horizontal duct 54 and has been cleaned by removing particles flows into the gas diffusion chamber of the partition plate 55, and is ejected downward through the ejection port. In this way, in each of the conveyance areas R1 to R4, a downdraft made of purified air is formed.

The processing station 11 utilizes the downdraft of the above-mentioned purified air to make the aerosols flow downward, and is discharged to the outside through the fan device 406 . In this processing station 11, in order to purify the ambient gas in each of the conveyance areas R1 to R4, a sound wave emitting device is provided in each of the conveyance areas R1 to R4. Specifically, in the transfer areas R1 to R4, the sonic emitting device 60 is installed in the area adjacent to the transfer/unload port K1 of the wafer W of the liquid processing apparatus such as the photoresist coating device 32, and the sound wave emitting device 60 is installed in the transfer areas R1 to R4. In the area adjacent to the loading/unloading port K2 of the wafer W of the thermal processing apparatus 40, a sound wave emitting device 70 is installed. The sound wave emitting devices 60 and 70 are installed, for example, so as to emit sound waves toward the bottoms of the transfer areas R1 to R4 where the fan device 406 for exhausting is provided from above the above-mentioned carry-in/carry-out ports K1 and K2.

By the sound waves emitted from the sound wave emitting devices 60 and 70 toward the bottom, the aerosols existing in the vicinity of the above-mentioned import/export outlet can be moved downward and discharged to the outside through the fan device 406 .

In addition, by disposing the above-mentioned sonic wave emitting devices 60 and 70 as described above, when the wafer W is transferred between the liquid processing device and the thermal processing device 40 and the transfer arms A1 to A4, particles can be prevented from passing from the liquid processing device and the thermal processing device 40 from the liquid processing device and the thermal processing device 40. Intrusion into the conveyance areas R1 to R4, or the intrusion of fine particles from the conveyance areas R1 to R4 into the liquid treatment apparatus and the heat treatment apparatus 40. Furthermore, by providing the sound wave emitting devices 60 and 70, during maintenance, even if the cleanliness is deteriorated due to the intrusion of particles due to the opening of the transfer areas R1 to R4, or the generation of fine dust due to human actions, it can be quickly restored. original cleanliness. In addition, the import/export ports K1 and K2 are configured to be freely openable and closeable according to the control of the control unit 500 to be described later.

In the illustrated example, one sonic wave emitting device 70 is provided for the two carry-in/outlet ports K2 of the heat treatment apparatus 40, but one sonic wave emitting device 70 may be provided for each of the two carry-in/outlet ports K2. In addition, the sound wave emitting device 70 may be installed not to emit sound waves toward the bottom side of the transfer areas R1 to R4, but to emit sound waves toward the outer side of the heat treatment device 40 provided with the exhaust parts 404 and 405 . Thereby, the fine particles in the vicinity of the inlet/outlet of the heat treatment apparatus 40 can be moved to the outer side and discharged to the outside through the exhaust units 404 and 405 .

FIG. 6 is a plan view of an example of the sound wave transmitting device 60 . The sound wave transmitting device 60 is a parametric horn that uses ultrasonic waves to emit directional sound waves, and arranges the complex-to-digital converters 61 that emit ultrasonic waves on a flat base 62 to form a parametric array. For example, the sound wave emitting device 60 is installed by fixing the base 62 to the vicinity of the ceiling of the transfer areas R1 to R4 so that the converter 61 faces downward. The sound wave emitted by the sound wave transmitting device 60 may be a frequency in the audible range, or may be an ultrasonic wave having a frequency above 20 kHz, for example.

Since the aerosols can be moved in a desired direction by forming the sound wave emitting device 60 with a parametric horn, the aerosols can be reliably discharged to the outside and removed. In addition, in the illustrated example, a total of 32 converters 61 of 4 vertically and 8 horizontally are arranged, but the number and arrangement of the converters 61 are not limited to this example. In addition, since the structure of the sound wave transmitting device 70 is the same as that of the sound wave transmitting device 60, the description thereof is omitted.

As shown in FIG. 1 , a control unit 500 is provided in the substrate processing system 1 composed of the above devices. The control unit 500 is, for example, a computer, and has a program storage unit (not shown). In the program storage unit, a program for controlling the processing of the wafer W in the substrate processing system 1 is stored. In addition, the program storage unit also stores a program for controlling the operation of the drive systems of the various processing apparatuses and conveying apparatuses described above to realize the coating process described later in the substrate processing system 1 . In addition, the program can be recorded on a computer-readable recording medium H such as a computer-readable hard disk (HD), floppy disk (FD), compact disk (CD), magneto-optical disk (MO), memory card, etc. It is mounted on the control unit 500 from the recording medium.

Next, wafer processing using the substrate processing system 1 configured as described above will be described. First, the boat C containing the plurality of wafers W is carried into the boat station 10 of the substrate processing system 1 , and then the wafers W in the wafer boat C are sequentially transferred to the processing station 11 by the wafer transfer device 23 . The transmission device of the third block G3.

Next, the wafer W is transferred to the thermal processing apparatus 40 by the transfer arm A2 of the transfer area R2 of the processing station 11 . Simultaneously with the transportation, the inlet/outlet K2 of the heat treatment device 40 in the second block G2 adjacent to the transportation area R2 is opened, and in accordance with this opening action, the sound wave is emitted from the sonic wave emitting device 70 to the bottom of the transportation area R2. It is preferable to start the sound wave emission before the start of the opening operation of the carry-in/carry-out port K2. The wafer support portion 305 of the transfer arm A2 is inserted into the heat treatment device 40 in a state where the sound waves are emitted from the sound wave emitting device 70 , and the wafer W is transferred to the plate 402 of the heat treatment device 40 . After the transfer, the wafer support portion 305 of the transfer arm A2 is pulled out of the thermal processing apparatus 40 , the carry-in/out port K2 is closed, and the sound wave emission from the sound wave emission device 70 is stopped. After that, the temperature adjustment process of the wafer W is performed by the heat treatment apparatus 40 .

After the temperature adjustment treatment, the inlet/outlet K2 of the heat treatment device 40 is opened, and the sound wave is emitted from the sound wave emitting device 70 in accordance with the opening action. In the state where the sound wave is emitted from the sound wave emitting device 70 , the wafer support portion 305 of the transfer arm A2 is inserted into the heat treatment device 40 , and the wafer W is transferred from the plate 402 of the heat treatment device 40 to the wafer support portion 305 . . After the transfer, the wafer support portion 305 of the transfer arm A2 is pulled out of the thermal processing apparatus 40 , the carry-in/out port K2 is closed, and the sound wave emission from the sound wave emission device 70 is stopped. In addition, in the following heat treatment in the heat treatment device 40, the sound wave emission from the sound wave emission device 70 is started/stopped in synchronization with the opening and closing of the carry-in/out port K2 as described above. Therefore, below, the description of the sound wave emission performed during the heat treatment using the heat treatment apparatus 40 will be omitted.

Then, the wafer W is conveyed to the lower antireflection film forming apparatus 31 by the conveyance arm A2. Simultaneously with this conveyance, the carry-in/outlet K1 of the lower antireflection film forming apparatus 31 is opened, and in accordance with this opening action, sound waves are emitted from the sound wave emitting device 60 toward the bottom of the conveyance area R2. It is preferable to start the sound wave emission before the opening operation of the carry-in/carry-out port K1 starts. The wafer support portion 305 of the transfer arm A2 is inserted into the lower anti-reflection film forming apparatus 31 in a state of emitting sound waves from the sonic wave emitting apparatus 60 , and the wafer is transferred to the wafer of the lower anti-reflection film forming apparatus 31 Pin for transmission (not shown). After the transfer, the wafer support portion 305 of the transfer arm A2 is pulled out from the lower antireflection film forming apparatus 31 , the carrying/carrying port K1 is closed, and the sound wave emission from the sound wave emitting device 60 is stopped. After that, a lower anti-reflection film is formed on the wafer W by the lower anti-reflection film forming apparatus 31 .

After the lower anti-reflection film is formed, the carrying/out port K1 of the lower anti-reflection film forming device 31 is opened, and the sound wave is emitted from the sound wave emitting device 60 in accordance with the opening operation. In the state where the sound wave is emitted from the sound wave emitting device 60, the wafer support portion 305 of the transfer arm A2 is inserted into the lower anti-reflection film forming device 31, and the wafer transfer pin of the lower anti-reflection film forming device 31 is inserted into the lower anti-reflection film forming device 31. The wafer W is transferred to the wafer support portion 305 . After the transfer, the wafer support portion 305 of the transfer arm A2 is pulled out of the lower antireflection film forming apparatus 31 , the carrying/carrying outlet K1 is closed, and the sound wave emission from the sound wave emitting device 60 is stopped. Also, in the following processing in a liquid processing apparatus other than the lower antireflection film forming apparatus 31, as described above, the sound wave emission from the sound wave emitting device 60 is started/stopped in synchronization with the opening and closing of the carry-in/out port K1. . Therefore, hereinafter, the description of the sound wave emission performed during the heat treatment by the liquid treatment apparatus is omitted.

After that, the wafer W is transferred into the heat treatment apparatus 40 adjacent to the transfer area R2 by the transfer arm A2, and heat treatment and temperature adjustment are performed. Next, the wafer W is conveyed to the attachment device 41 adjacent to the conveyance area R2 by the conveyance arm A2, and an attachment process is performed. In addition, although illustration is omitted, the attaching device 41 is also provided with a loading/unloading outlet for the wafer W, and a sound wave emitting device is provided in the area adjacent to the aforementioned loading/unloading outlet in the transport area R2. In addition, in the attachment treatment by the attachment device 41, as in the heat treatment by the heat treatment device 40, the sound wave emission from the sound wave emitting device is started/stopped in synchronization with the opening and closing of the inlet/outlet.

After that, the wafer W is transferred to the transfer device of the fourth block G4 adjacent to the transfer area R2 by the transfer arm A2. Next, the wafer W is transferred to another transfer device of the fourth block G4 adjacent to the transfer area R3 by the wafer transfer device 110 . After that, the wafer W is conveyed to the photoresist coating apparatus 32 by the conveyance arm A3 in the conveyance area R3, and a photoresist film is formed on the wafer W. As shown in FIG. After that, the wafer W is conveyed to the heat treatment apparatus 40 adjacent to the conveyance area R3 by the conveyance arm A3, and a prebake process is performed. In addition, in the pre-baking treatment, the same treatment as the heat treatment after the formation of the lower anti-reflection film is performed, and also in the heat treatment after the formation of the anti-reflection film, the post-exposure baking treatment, and the post-baking treatment, which will be described later. deal with. However, the heat treatment apparatuses 40 used for each heat treatment are different from each other.

Next, the wafer W is transferred to the transfer device of the fourth block G4 adjacent to the transfer area R3 by the transfer arm A3. Next, the wafer W is transferred to another transfer device of the fourth block G4 adjacent to the transfer area R4 by the wafer transfer device 110 . After that, the wafer W is transferred to the upper anti-reflection film forming apparatus 33 by the transfer arm A4 in the transfer area R4, and the upper anti-reflection film is formed on the wafer W. As shown in FIG. Then, by the transfer arm A4, the wafer W is transferred to the thermal processing apparatus 40 adjacent to the transfer area R4, and heating and temperature adjustment are performed. Then, the wafer W is conveyed to the peripheral exposure apparatus 42 adjacent to the conveyance area R4 by the conveyance arm A4, and peripheral exposure processing is performed. Although not shown, the peripheral exposure device 42 is also provided with a loading/unloading port for the wafer W, and a region adjacent to the aforementioned loading/unloading port in the transfer area R4 is provided with a sound wave emitting device. Also, in the peripheral exposure process by the peripheral exposure device 42, as in the heat treatment by the heat treatment device 40, the sound wave emission from the sound wave emission device is started/stopped in synchronization with the opening and closing of the carry-in/outlet.

Next, the wafer W is transferred to the transfer device of the fourth block adjacent to the transfer area R4 by the transfer arm A4. After that, the wafer W is transferred to the exposure device 12 by the wafer transfer device 110, and exposure processing is performed in a predetermined pattern.

Next, the wafer W is transferred to the transfer device of the fourth block G4 adjacent to the transfer area R1 by the wafer transfer device 110 . Next, by the transfer arm A1 in the transfer area R1, the wafer W is transferred to the heat treatment apparatus 40 adjacent to the transfer area R1, and a post-exposure bake process is performed. Then, the wafer W is conveyed to the development processing apparatus 30 by the conveyance arm A1, and development processing is performed. After the development process is completed, the wafer W is conveyed to the heat treatment apparatus 40 adjacent to the conveyance area R1 by the conveyance arm A1, and a post-baking process is performed. After that, the wafer W is transferred to the transfer device of the third block G3 adjacent to the transfer area R1 by the transfer arm A1. Thereafter, the wafer W is transported to the wafer boat C of the wafer boat mounting plate 21 by the wafer transport device 23 to complete a series of photolithography processes.

In the above example, the sound wave is emitted from the sound wave transmitting device 70 in synchronization with the opening and closing, but the timing of sound wave emission is not limited to this example. For example, the wafer W may be emitted frequently when it is stored in the processing station 11. Specifically, the emission of the sound wave may be started when the wafer W is loaded into the third block of the processing station 11, and the When the circle W is moved out of the 4th block, the emission of sound waves is stopped.

FIG. 7 is a side view of another example of the sound wave transmitting device. In the figure, the sound wave emitting device 60' is a parametric horn that emits directional sound waves. In order to make the emitting direction of the sound waves adjustable, the sound wave emitting device 60' is supported in a swingable manner. Specifically, in the sound wave emitting device 60 ′, the base 62 ′ having the complex number converter 61 is supported by the pivot portion 63 in a swingable manner. In addition, the pivot portion 63 itself is supported by, for example, the frame body 51 of the processing station 11 .

In this way, by supporting the sonic wave emitting device 60' in a swingable manner, a small object can be used as the sonic wave emitting device 60', and a significant increase in the manufacturing cost of the substrate processing system 1 can be prevented. The sound wave emitting device 60' is controlled by the control unit 500 to periodically swing, for example.

(Another example of the first embodiment) FIG. 8 is a schematic explanatory diagram of another example of the substrate processing system according to the first embodiment of the present invention, and is a front view showing only the boat station. In the example of FIG. 5 etc., in the conveyance areas R1-R4 of the processing station 11, the sound wave transmitting apparatuses 60 and 70 are installed. On the other hand, in the example of FIG. 8, the sound wave transmitting device 80 is installed in the transfer area L of the boat station 10'. Specifically, the wafer boat station 10 ′ has a frame body 56 , and the frame body 56 has a carry-in/carry-out port K3 facing the wafer boat C placed on the wafer boat stage 20 , so it is not connected to the above-mentioned transfer area L in the boat station 20 . The sound wave transmitting device 80 is installed in the area adjacent to the import/export outlet K3.

In this way, by disposing the sonic wave emitting device 80 in the transfer area L of the boat station 10 ′, when the wafer W is unloaded from the boat C or the wafer W is loaded into the boat C, the intrusion of particles from the boat C can be prevented. to the transfer area L, or particles enter the wafer boat C from the transfer area L. In addition, the configuration of the sound wave transmitting device 80 can be, for example, the same as that of the sound wave transmitting device 60 in FIG. 6 . Moreover, the sound wave emitting device 80 may be provided in the vicinity of the carry-in/export port K3 as shown in FIG. 8, or may be provided in the vicinity of the top plate surface above the carry-in/export port K3.

Although not shown, an FFU unit is also provided for the boat station 10', and an exhaust mechanism for exhausting the ambient gas in the transfer area L is provided at the bottom of the boat station 10'. The sound wave emitting device 80 is installed, for example, so as to emit sound waves toward the bottom of the transfer area L where the exhaust mechanism is provided from above the carry-in/carry-out port K3.

(Another Example of the First Embodiment) In the above example, the sonic emitting device is installed only in the area adjacent to the wafer loading/unloading exit in the transfer area, but the area where the sonic emitting device is installed is not limited to the above example. For example, the sound wave emitting device may be installed so as to cover the whole of the ceiling surface within the range that does not interfere with the downdraft from the ceiling surface in the transfer area. Moreover, in the center of the width direction of the conveyance areas R1 to R4 of the processing station 11, a plurality of sound wave emitting devices may be installed along the longitudinal direction. Furthermore, a plurality of sound wave emitting devices may also be provided along the width direction of the conveyance area. In addition, a sound wave emitting device may be installed in an area adjacent to the conveying device of the third block G3 or the fourth block G4 in the transfer area.

(Another example of the first embodiment) FIG. 9 is an explanatory diagram of another example of the substrate processing system according to the first embodiment of the present invention, and FIG. 9(B) is a partial view of the sound wave emitting device attached to the substrate conveying device of FIG. 9(A). In the example of FIG. 5 and the like, the sound wave transmitting device is attached to the casing 51 of the processing station 11 . On the other hand, in this example, as shown in FIG.

The sound wave transmitting device 600 mounted on the substrate conveyance arm A has a first sound wave transmitting unit 610 and a second sound wave transmitting unit 620 . The first sound wave emitting unit 610 and the second sound wave emitting unit 620 are parametric speakers that emit directional sound waves by using ultrasonic waves, respectively, and include: complex converters 611, 621, which emit ultrasonic waves; base members 612, 622 , for fixing the converters 611 and 621 to the substrate conveying arm A.

As shown in FIG. 9(B) , the base member 612 includes: a support surface 612a for supporting the plurality of converters 611; In addition, since the configuration of the second sound wave transmitting unit 620 is the same as that of the first sound wave transmitting unit 610, the description thereof is omitted.

The sonic wave from the first sonic wave emitting unit 610 and the sonic wave from the second sonic wave emitting unit 620 are jointly radiated to the entire surface of the wafer placed on the transfer arm A. However, the supporting surface 612a of the first sound wave transmitting unit 610 supporting the converter 611 and the supporting surface supporting the converter 621 of the second sound wave transmitting unit 620 are not parallel to each other. Therefore, the vector V1 of the sound wave from the first sound wave transmitting unit 610 and the vector V2 of the sound wave from the second sound wave transmitting unit 620 are non-parallel, and the sum of the two vectors V1 and V2 becomes the direction from the root of the conveying arm A to the front end ( The vector V3 of the negative X direction of the graph). Therefore, during wafer transfer, by emitting sound waves from the sound wave emitting device 600, the particles near the wafer surface can be separated from the wafer and discharged to the outside, so that the particles can be prevented from adhering to the wafer.

Also, as shown in FIG. 9(B), the first sonic wave emitting unit 610 is fixed to the conveying arm A so that the wafer W is located at the center of the converter group formed by the complex number converters 611. More specifically, the first sound wave emitting unit 610 is fixed to the conveying arm A so that the long-side direction of the transducer group is parallel to the surface of the wafer W, and the center of the short-side direction of the transducer group is located on the wafer. Circle W surface. The same applies to the second sound wave transmitting unit 620 .

In the above example, the sound wave transmitting device 600 is mounted on the outer side of the carrying arm A. However, the sound wave emitting device can also be installed above the carrying arm A. More specifically, the sound wave emitting device may also be mounted above the wafer support portion 305 of the transfer arm A. As shown in FIG.

(Second Embodiment) Fig. 10 is a schematic explanatory diagram of a substrate processing system according to a second embodiment of the present invention, and Figs. Top view and side view. The substrate processing system of the second embodiment is similar to the substrate processing system of the first embodiment, except that the transfer areas R1 to R4 and/or the transfer area L are provided with the sound wave emitting device, the transfer areas R1 to R4 and/or the transfer area L are More adsorption zone.

Specifically, for example, as shown in FIGS. 10(A) and 10(B) , the cooled cooling plate 700 is attached to the partition plate 55 forming the bottom surface of the conveyance areas R2 to R4, and the cooling plate 700 Due to the thermophoresis effect, the suspended particles in the high temperature region are adsorbed on the cooling plate 700 . In other words, the adsorption zone is formed by the cooling plate 700 on the partition plate 55 .

The cooling plate 700 can be cooled, for example, by circulating cooling water inside. However, the cooling method of the cooling plate 700 is not limited to this, and may be cooled by, for example, cold air. Moreover, it is preferable to also attach the cooling plate 700 to the bottom wall which forms the bottom surface of the conveyance area R1.

If the adsorption zone is provided on the bottom surface of the conveyance zones R1 to R4, not only the suspended particles can be collected, but also the particles deposited on the bottom surface can be prevented from rotating up. Furthermore, in addition to the sound wave emitting device, the adsorption area is further provided as described above, so that even if the cleanliness becomes poor during maintenance, the original cleanliness can be returned more quickly.

In addition to disposing the cooling plate 700 on the partition plate 55 or the bottom wall, for example, cooling water can be circulated inside the partition plate 55 or the bottom wall to form cooling in the partition plate 55 or the bottom wall. The zone is the adsorption zone of suspended particles.

FIG. 11 is a diagram showing another example of the cooling plate. The cooling plate 700 of FIG. 10 is provided on the partition plate 55 so as to cover the partition plate 55 substantially all over the surface. On the other hand, the cooling plate 800 of FIG. 11 covers the part of the partition plate 55 , specifically, does not cover the center in the width direction of the transfer areas R2 to R4 of the partition plate 55 but only covers both sides , and set on the partition plate 55 . Using the cooling plate 800, suspended particles can also be adsorbed.

(Other example of 2nd Embodiment) In the above-mentioned example, the cooling plate was attached to the part which forms the bottom wall of the conveyance area, such as the partition plate 55. However, the cooling plate can also be mounted on the part forming the side wall of the handling area. Moreover, a cooling plate may be attached to the conveyance arm A. When attaching the cooling plate to the conveyance arm A, the cooling plate is attached to the elevating body 303, for example. In addition, an exhaust mechanism is provided for the conveyance arm A, and the exhaust system is exhausted from the X-axis/θ-axis via the Z-axis and from the Y-axis. As described above, by attaching the cooling plate to the lower part of the conveying arm A such as the lift body 303, even if the particles leak from the exhaust passage of the conveying arm A, more specifically, even in the case of the θ-Z axis pipe In the case of particle leakage, the cooling plate can also absorb the particles.

(Another example of the second embodiment) In the above example, the adsorption region of the fine particles is formed by the thermophoresis effect using the cooling plate. However, the adsorption method is not limited to the above-mentioned example, and suspended particles may be adsorbed by electrostatic adsorption. In this case, an electrified electrified plate is used instead of the cooling plate, and is installed in the conveyance area.

When the adsorption zone is provided as in the present embodiment, the adsorption zone is cleaned at a predetermined timing to remove the captured particles. Cleaning of the adsorption zone, eg during regular maintenance. In addition, it is also possible to monitor the contamination status of the adsorption area, notify the user when cleaning is necessary, and clean the adsorption area according to the notification result. The removal of particles from the adsorption zone can be performed, for example, by manual suction with a suction nozzle, or by providing an exhaust mechanism around the adsorption zone and automatically discharging it with the exhaust mechanism.

(Third Embodiment) A substrate processing system according to a third embodiment of the present invention will be described with reference to FIGS. 12 and 13 . 12 and 13 are schematic explanatory diagrams of a shelf unit installed in the third block of the substrate processing system of the present embodiment, FIG. 12 is a side view of the shelf unit, and FIG. 13 is a storage unit provided in the shelf unit to be described later. Top view of the interior of the block.

The substrate processing system of the third embodiment has another sonic wave emitting device which is adjacent to the transfer areas R1 to R4 and/or the transfer area L and faces the transfer areas R1 to R4 and/or the transfer area L emits sound waves.

Specifically, for example, as shown in FIG. 12 , the shelf unit 900 is a storage device provided in the third block G3 adjacent to the conveyance areas R1 to R4, and the shelf unit 900 has a direction toward the conveyance areas R1 to R4. Another sound wave transmitting device 910 that emits sound waves.

The shelf unit 900 has a plurality of storage blocks B1 to B4 partitioned in order to correspond to the conveyance areas R1 to R4. Although the illustration is omitted, each of the storage blocks B1 to B4 of the shelf unit 900 is provided with a mounting rack or a cooling plate as a storage portion for storing the wafers W. As shown in FIG. The cooling plate is used to adjust the wafer W to a predetermined temperature. In addition, the rack unit 900 has transfer parts TR1 and TR2, and the transfer parts TR1 and TR2 have a transfer stage for linearly transferring the wafer W between the third block G3 and the fourth block G4. Wafers W are transferred between the illustrated shuttle transfer device and transfer arms A1 to A4.

For example, the sound wave transmitting device 910 can have the same configuration as that of the sound wave transmitting device 60 in FIG. 6 . In addition, one sound wave transmitting device 910 is provided in each of the storage blocks B1 to B4. Furthermore, in this example, in the storage block B1, as shown in FIG. 13 , the sound wave emitting device 910 is installed in the manner of emitting sound waves toward the transfer area R1: when the wafer W is stored in the storage block When B1 is opposed to the transfer area R1, the wafer W is sandwiched therebetween. The arrangement positions of the sound wave transmitting devices 910 in the storage blocks B2 to B4 are also the same.

By disposing another sound wave emitting device 910 in the rack unit 900 that emits sound waves toward the transfer areas R1 to R4 as in the present embodiment, it is possible to prevent the aerosols existing in the transfer areas R1 to R4 from invading into the rack unit 900 . . Therefore, it is possible to prevent the suspended particles in the transfer areas R1 to R4 from adhering to the wafers W accommodated in the shelf unit 900 .

The sound wave transmitting device 910, for example, transmits sound waves in accordance with the movements of the corresponding conveying arms A1 to A4. Specifically, the sound wave transmitting device 910 starts from the time when the wafer support part 305 of the corresponding conveyance arm A1 starts to move with respect to the storage block B1, that is, from the time when the wafer support part 305 starts to move from the origin position to The sound wave is emitted until the wafer support portion 305 returns to the original position. Instead of this, when the corresponding conveying arm A1 approaches the scaffolding unit 900, the sonic transmitting device 910 can also stop the movement of the conveying arm A1 in the direction of the scaffolding unit 900 (the negative direction of the Y direction in FIG. 1 ) and start to support the wafer. The unit 305 emits sound waves until it returns to the origin position. In addition, the sound wave transmitting device 910 may also emit sound waves frequently.

The sound wave transmitting timing of the sound wave transmitting device 910 may be the same for the storage blocks B1-B4, or may be different for each storage block B1-B4.

In addition, in the above-mentioned example, the sound wave transmitting device 910 is installed so as to emit sound waves toward the transfer areas R1 to R4. However, in addition to or instead of this, the sonic wave emitting device 910 may be provided in a manner of emitting sonic waves toward the transfer area L or the transfer area where the wafer transfer device 100 is stored. However, when only one sound wave emitting device 910 is installed, it is preferable to install it so as to emit sound waves toward the transfer areas R1 to R4. This is because, among the transfer arms, the transfer arms A1 to A4 are most frequently moved, so there is a high possibility that suspended particles are present in the transfer areas R1 to R4 where the transfer arms A1 to A4 are provided.

In addition, in the above-mentioned example, the sound wave transmitting device 910 is provided only in the storage blocks B1 to B4 of the shelf unit 900, but the sound wave transmitting device 910 may be similarly provided in the transmission parts TR1 and TR2.

Furthermore, in the above-mentioned example, the sound wave transmitting device 910 is installed in the shelf unit 900 in the third block G3 adjacent to the transfer areas R1 to R4. However, in addition to or instead of this, the sound wave emitting device 910 may also be installed in the shelf unit in the fourth block G4 adjacent to the transfer areas R1 - R4 .

Moreover, in the third embodiment, as in the substrate processing system of the first embodiment, it is preferable that the transfer area is provided with a sound wave emitting device. [Industrial availability]

The present invention can be applied to a substrate processing system provided with a substrate transfer area for transferring substrates.

1‧‧‧Substrate processing system 10, 10'‧‧‧boat station 11‧‧‧processing station 12‧‧‧exposure device 13‧‧‧interface station 20‧‧‧boat mounting platform 21‧‧‧boat loading Mounting plate 22‧‧‧Conveying path 23‧‧‧Wafer conveying device 30‧‧‧Development processing device 31‧‧‧Lower antireflection film forming device 32‧‧‧Resist coating device 33‧‧‧Upper antireflection film forming Device 40‧‧‧Heat treatment device41‧‧‧Attaching device42‧‧‧Peripheral exposure device51‧‧‧Frame 52‧‧‧Fan filter unit (FFU)53‧‧‧Vertical duct 54‧‧‧Horizontal duct 55 ‧‧‧Partition plate 56‧‧‧Frame body 60, 60´‧‧‧Sound wave transmitting device 61‧‧‧Converter 62, 62´‧‧‧Base 63‧‧‧Pivot part 70, 80‧‧‧Sound wave transmitting Apparatus 100, 110‧‧‧Wafer handling device 100a, 110a‧‧‧Transfer arm 111‧‧‧Transfer device 201‧‧‧Rotary chuck 202‧‧‧Cup body 203‧‧‧Filter 301‧‧‧Guide Parts 302‧‧‧Frame 303‧‧‧Lifting body 304‧‧‧Rotating body 305‧‧‧Wafer supporting part 401‧‧‧Hot plate 402‧‧‧Plates 403‧‧‧Rectifying plates 404, 405‧‧‧ Exhaust part 406‧‧‧Fan device 500‧‧‧Control part 600‧‧‧Sound wave transmitting device 610‧‧‧First sound wave transmitting unit 611‧‧‧Converter 612‧‧‧Base member 612a‧‧‧Support surface 612b ‧‧‧Fixing surface 620‧‧‧Second sound wave transmitting unit 621‧‧‧Converter 622‧‧‧Base member 700, 800‧‧‧Cooling plate 900‧‧‧Shelf unit 910‧‧‧Sound wave transmitting device A‧ ‧‧Substrate transport arm A1～A4‧‧‧Transfer arm B1～B4‧‧‧Accommodation block C‧‧‧Boat G1～G4‧‧‧Block H‧‧‧Recording medium K1～K3‧‧‧Loading/ Outlet L‧‧‧Wafer transfer area R‧‧‧Wafer transfer area R1～R4‧‧‧Transportation area TR1, TR2‧‧‧Transfer section V1～V3‧‧‧Vector W‧‧‧Wafer

1 is a schematic plan view of the configuration of the substrate processing system according to the first embodiment. [ Fig. 2] Fig. 2 is a schematic front view of the configuration of the substrate processing system according to the first embodiment. [ Fig. 3] Fig. 3 is a schematic rear view of the configuration of the substrate processing system according to the first embodiment. 4 is a schematic vertical cross-sectional side view of the configuration of the substrate processing system according to the first embodiment. [ Fig. 5] Fig. 5 is a schematic vertical cross-sectional front view of the configuration of the substrate processing system according to the first embodiment. [ Fig. 6 ] A plan view of an example of a sound wave transmitting device. [ Fig. 7 ] A side view of another example of the sonic wave emitting device. [ Fig. 8] Fig. 8 is a schematic explanatory diagram of another example of the substrate processing system according to the first embodiment of the present invention. [ Fig. 9 ] (A) to (B) are explanatory diagrams of another example of the substrate processing system according to the first embodiment of the present invention. [ Fig. 10 ] (A) to (B) are schematic explanatory diagrams of the substrate processing system according to the second embodiment of the present invention. [Fig. 11] Another illustration of the cooling plate. [ Fig. 12] Fig. 12 is a schematic explanatory diagram of a substrate processing system according to a third embodiment of the present invention. [ Fig. 13 ] An interior plan view of a storage block provided in a shelf unit.

30‧‧‧Development processing device

31‧‧‧Lower anti-reflection film forming device

32‧‧‧Photoresist coating device

33‧‧‧Apparatus for forming upper antireflection film

40‧‧‧Heat treatment equipment

51‧‧‧Frame

52‧‧‧Fan Filter Unit (FFU)

54‧‧‧Horizontal conduit

55‧‧‧Separator

60, 70‧‧‧Sound wave transmitter

201‧‧‧Rotary chuck

202‧‧‧Cup

203‧‧‧Filter

301‧‧‧Guide

302‧‧‧Framework

303‧‧‧Lifting body

304‧‧‧Rotating body

305‧‧‧Wafer support

401‧‧‧Hot Plate

402‧‧‧Panel

403‧‧‧Rectifier

404, 405‧‧‧Exhaust

406‧‧‧Fan units

A1~A4‧‧‧carrying arm

K1~K2‧‧‧Entry/Exit

R1~R4‧‧‧Transportation area

W‧‧‧Wafer

Claims (5)

A substrate processing system is provided with a processing device for processing substrates, and is provided with a substrate transport area for transporting substrates to the processing device, characterized by comprising: a sound wave transmitting device, which emits sound waves to prevent suspension in the substrate transport area The particles are attached to the substrate; and a substrate conveying device moves in the substrate conveying area to convey the substrate; the sound wave emitting device is mounted on the substrate conveying device. A substrate processing system is provided with a processing device for processing substrates, and is provided with a substrate transport area for transporting substrates to the processing device, characterized by comprising: a sound wave transmitting device, which emits sound waves to prevent suspension in the substrate transport area The particles are attached to the substrate; the sonic emitting device is supported in a swingable manner. A substrate processing system is provided with a processing device for processing substrates, and is provided with a substrate transport area for transporting substrates to the processing device, characterized by comprising: a sound wave transmitting device, which emits sound waves to prevent suspension in the substrate transport area The particles are attached to the substrate; the substrate handling area has an adsorption area for adsorbing the particles. A substrate processing system, comprising a processing device for processing a substrate, and a substrate transport area for transporting the substrate to the processing device, characterized by comprising: A sound wave emitting device, which emits sound waves to prevent the suspended particles in the substrate carrying area from adhering to the substrate; and a device adjacent to the substrate carrying area; the sound wave emitting device, in a manner of emitting sound waves toward the substrate carrying area, located in The adjacent device; the adjacent device is a accommodating device for accommodating substrates for substrate transfer, and the sonic emitting device is arranged at: when the substrate is accommodated in the accommodating device, it is opposite to the substrate conveying area and the The substrate is sandwiched therebetween. According to the substrate processing system of claim 4, the sound wave transmitting device emits sound waves in cooperation with the action of the substrate transport device moving in the substrate transport area to transport the substrate.

Images