TW201843439A - Substrate processing system - Google Patents
Substrate processing system Download PDFInfo
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- TW201843439A TW201843439A TW107104891A TW107104891A TW201843439A TW 201843439 A TW201843439 A TW 201843439A TW 107104891 A TW107104891 A TW 107104891A TW 107104891 A TW107104891 A TW 107104891A TW 201843439 A TW201843439 A TW 201843439A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
Abstract
Description
本發明係關於一種基板處理系統，該基板處理系統具備處理基板的處理裝置，並設有用以將基板搬運至該處理裝置的基板搬運區。The present invention relates to a substrate processing system including a processing device for processing a substrate and a substrate transfer area for transferring the substrate to the processing device.
例如，於半導體元件的製造工程中的光微影製程中，依序進行將塗布液供給至作為基板的半導體晶圓(以下稱「晶圓」。)表面上而形成反射防止膜或光阻膜的塗布處理、將光阻膜曝光成既定圖案的曝光處理、對曝光後的光阻膜進行顯影的顯影處理、及將晶圓予以加熱的熱處理等，而於晶圓上形成既定光阻圖案。接著，以光阻圖案作為遮罩進行蝕刻處理，其後進行光阻膜的去除處理等，而於晶圓上形成既定圖案。此等一連串處理係於塗布顯影處理系統中進行，該塗布顯影處理系統係搭載有用以處理晶圓的各種處理裝置或用以搬運晶圓的搬運機構等的基板處理系統。For example, in a photolithography process in the manufacturing process of a semiconductor element, a coating liquid is sequentially supplied to the surface of a semiconductor wafer (hereinafter referred to as a "wafer") as a substrate to form an antireflection film or a photoresist film. Coating process, exposure process for exposing the photoresist film to a predetermined pattern, development process for developing the exposed photoresist film, and heat treatment for heating the wafer, etc., to form the predetermined photoresist pattern on the wafer. Next, an etching process is performed using the photoresist pattern as a mask, and then a photoresist film removal process is performed to form a predetermined pattern on the wafer. These series of processing are performed in a coating development processing system, which is a substrate processing system equipped with various processing apparatuses for processing wafers or a transport mechanism for transporting wafers.
又，於塗布顯影處理系統中，例如，為了使搬運區內的環境氣體保持潔淨，而將設有搬運機構的搬運區加以密閉，並於搬運區的頂板面，設置供給潔淨空氣的下降氣流的ULPA(Ultra Low Penetration Air)過濾器(專利文獻1)。藉由設置ULPA過濾器，可使搬運區內的懸浮微粒往系統下方流動，並藉由排氣機構排出。 [先前技術文獻] [專利文獻]Further, in the coating and development processing system, for example, in order to keep the ambient gas in the transfer area clean, the transfer area provided with the transfer mechanism is sealed, and a downflow air supply for supplying clean air is provided on the top surface of the transfer area. ULPA (Ultra Low Penetration Air) filter (Patent Document 1). By setting ULPA filter, the suspended particles in the handling area can flow below the system and be discharged through the exhaust mechanism. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本特開2012-154688號公報[Patent Document 1] Japanese Patent Application Publication No. 2012-154688
[發明欲解決之問題][Invention to solve the problem]
另外，針對裝置內的微粒的控制，伴隨著半導體元件的製造工程的微縮化，對於所管理的微粒亦將更為嚴格。因此作為防止懸浮微粒附著於基板的對策，若如專利文獻1般僅對搬運區設置ULPA過濾器，則對於作為裝置內的微粒的控制而言已變得不充分。例如，即使設置ULPA過濾器，但因晶圓搬運裝置的動作等使得氣流的流向阻斷、改變，因產生與晶圓搬運裝置未動作的靜止狀態不同的內部氣流，有時會有暫時朝下方的懸浮微粒再度往上方流動的情形。此情形時，可能存在長時間未從搬運區排出的微粒，依製造工程不同，如此的微粒的管理亦成為必要。In addition, the control of the microparticles in the device is accompanied by the miniaturization of the manufacturing process of the semiconductor device, and the microparticles to be managed will be more stringent. Therefore, as a countermeasure for preventing the floating particles from adhering to the substrate, if a ULPA filter is provided only in the transport area as in Patent Document 1, it becomes insufficient to control the particles in the device. For example, even if a ULPA filter is installed, the flow direction of the air flow is blocked or changed due to the operation of the wafer transfer device, etc., and an internal air flow that is different from the stationary state in which the wafer transfer device is not operated may be temporarily downward. Of suspended particles flowing upward again. In this case, there may be particles that have not been discharged from the transfer area for a long time. Depending on the manufacturing process, the management of such particles is also necessary.
本發明係基於上述問題點所成，其目的在於提供一種基板處理系統，該基板處理系統具備處理基板的處理裝置，並設有用以將基板搬運至該處理裝置的基板搬運區，能更確實地防止懸浮微粒附著於基板。 [解決問題之方法]The present invention has been made based on the above-mentioned problems, and an object thereof is to provide a substrate processing system including a processing device for processing a substrate and a substrate transfer area for transferring the substrate to the processing device, which can more reliably Prevent aerosols from adhering to the substrate. [Solution to the problem]
為了達成該目的，本發明之基板處理系統，其具備處理基板的處理裝置，並設有用以將基板搬運至該處理裝置的基板搬運區，其特徵為：於該基板搬運區，具備發射音波的音波發射裝置設置。In order to achieve the object, the substrate processing system of the present invention includes a processing device for processing a substrate and a substrate transfer area for transferring the substrate to the processing device, and is characterized in that the substrate transfer area is provided with a sound wave emitting device. Sonic emission device set.
依據本發明，因於該基板搬運區具備發射音波的音波發射裝置，可使懸浮微粒往排氣機構的方向移動，故可更確實地防止懸浮微粒附著於基板。According to the present invention, since the substrate transfer area is provided with a sound wave emitting device that emits sound waves, the suspended particles can be moved in the direction of the exhaust mechanism, so that the suspended particles can be more reliably prevented from adhering to the substrate.
該音波發射裝置亦可設於與該基板搬運區中之與該處理裝置的基板搬入/搬出口相鄰的區域。The sound wave emitting device may be provided in an area adjacent to the substrate carrying in / out port of the processing device in the substrate carrying area.
上述基板處理系統亦可具備載置用以收容基板的晶舟之晶舟載置部，該音波發射裝置設於該基板搬運區中之和對於該晶舟載置部的基板搬入/搬出口相鄰的區域。The above-mentioned substrate processing system may further include a wafer boat mounting portion on which a wafer boat for accommodating a substrate is mounted, and the acoustic wave emitting device is provided in the substrate transfer area and the substrate loading / unloading exit phase of the wafer boat mounting portion is provided. Adjacent areas.
上述基板處理系統亦可具備於該基板搬運區內移動以搬運基板的基板搬運裝置，該音波發射裝置安裝於該基板搬運裝置。The substrate processing system may further include a substrate transfer device that moves within the substrate transfer area to transfer the substrate, and the acoustic wave emitting device is mounted on the substrate transfer device.
該音波發射裝置亦可以可擺動的方式被支撐。The sound wave transmitting device may be supported in a swingable manner.
該基板搬運區亦可具有吸附微塵的吸附區。The substrate transfer area may also have an adsorption area that adsorbs fine dust.
該音波發射裝置所發射的音波，亦可具有指向性。The sound waves emitted by the sound wave transmitting device may also have directivity.
該基板處理系統亦可具備與該基板搬運區相鄰的裝置，該音波發射裝置以朝著該基板搬運區發射音波的方式，設於該相鄰的裝置。The substrate processing system may further include a device adjacent to the substrate transfer area, and the sound wave emitting device may be provided on the adjacent device so as to emit a sound wave toward the substrate transfer area.
該相鄰裝置亦可係為了基板傳送而收容基板之收容裝置，該音波發射裝置設於：在將基板收容於該收容裝置時與該基板搬運區對向而將該基板夾於其間之位置。The adjacent device may also be a storage device for accommodating a substrate for substrate transfer, and the sonic emission device is provided at a position where the substrate is opposed to the substrate transfer area and the substrate is sandwiched therebetween when the substrate is stored in the storage device.
該音波發射裝置亦可配合於該基板搬運區內移動以搬運基板的基板搬運裝置的動作，而發射音波。 [發明效果]The sound wave transmitting device can also emit sound waves in cooperation with the movement of the substrate conveying device that moves in the substrate conveying area to convey the substrate. [Inventive effect]
依據本發明，可於具備處理基板的處理裝置且設有將基板搬運至該處理裝置的基板搬運區的基板處理系統中，更確實地防止懸浮微粒附著於基板。According to the present invention, in a substrate processing system provided with a processing device for processing a substrate and provided with a substrate transfer area for transferring the substrate to the processing device, it is possible to more reliably prevent aerosol particles from adhering to the substrate.
(第1實施形態) 以下，說明本發明的實施形態。圖1係本發明的第1實施形態的基板處理系統的構成概略說明圖。圖2及圖3係概要顯示各基板處理系統的內部構成概略的前視圖及後視圖。圖4及圖5係概要顯示各基板處理系統的內部構成概略的縱剖側視圖及縱剖前視圖。又，本說明書及圖式中，對於具有實質相同功能結構的要件，藉由賦予相同符號而省略重複說明。(First Embodiment) Hereinafter, embodiments of the present invention will be described. FIG. 1 is a schematic explanatory diagram of a configuration of a substrate processing system according to a first embodiment of the present invention. FIG. 2 and FIG. 3 are a front view and a rear view showing the outline of the internal configuration of each substrate processing system. 4 and 5 are a longitudinal cross-sectional side view and a longitudinal cross-sectional front view that schematically show the internal configuration of each substrate processing system. In this specification and the drawings, elements having substantially the same functional structure are denoted by the same reference numerals, and redundant descriptions are omitted.
基板處理系統1如圖1所示，具有將下述構件一體連接的構成：晶舟站10，將收容複數片晶圓W的晶舟C加以搬入/搬出；處理站11，具備複數之對晶圓W實施既定處理的各種處理裝置；及介面站13，於與處理站11相鄰的曝光裝置12之間，進行晶圓W的傳送。As shown in FIG. 1, the substrate processing system 1 has a structure in which the following components are integrally connected: a wafer boat station 10 that loads / unloads a wafer boat C that houses a plurality of wafers W; a processing station 11 that includes a plurality of wafers Various processing apparatuses that perform predetermined processing on the circle W; and the interface station 13 transfers the wafer W between the exposure apparatuses 12 adjacent to the processing station 11.
於晶舟站10，設有晶舟載置台20。於晶舟載置台20，設有複數晶舟載置板21，該晶舟載置板21係於對基板處理系統1的外部進行晶舟C的搬入/搬出時，用以載置晶舟C。At the boat station 10, a boat mounting platform 20 is provided. The wafer boat mounting table 20 is provided with a plurality of wafer boat mounting plates 21. The wafer boat mounting plate 21 is used for loading the wafer boat C when the wafer boat C is carried in / out of the substrate processing system 1. .
於晶舟站10，於晶舟載置台20與處理站11之間，設置晶圓搬運區L。如圖1所示，於晶圓搬運區L，設有於朝X方向延伸的搬運路徑22上移動自如的晶圓搬運裝置23。晶圓搬運裝置23於上下方向及繞垂直軸(θ方向)亦移動自如，可於各晶舟載置板21上的晶舟C與後述處理站11的第3區塊G3的傳送裝置之間，搬運晶圓W。At the wafer boat station 10, a wafer transfer area L is set between the wafer boat mounting table 20 and the processing station 11. As shown in FIG. 1, in the wafer transfer area L, a wafer transfer device 23 that is freely movable on a transfer path 22 extending in the X direction is provided. The wafer transfer device 23 can also move freely in the vertical direction and around the vertical axis (θ direction), and can be between the wafer boat C on each wafer boat mounting plate 21 and the transfer device in the third block G3 of the processing station 11 described later , Handling wafer W.
於處理站11，設有複數個具備各種裝置的區塊，例如設有第1～4的4個區塊G1、G2、G3、G4。例如，於處理站11的正面側(圖1的X方向負方向側)，設有第1區塊G1，於處理站11的背面側(圖1的X方向正方向側)，設有第2區塊G2。又，於處理站11的晶舟站10側(圖1的Y方向負方向側)，設有第3區塊G3，於處理站11的介面站13側(圖1的Y方向正方向側)，設有第4區塊G4。The processing station 11 is provided with a plurality of blocks including various devices, for example, four blocks G1, G2, G3, and G4 are provided. For example, a first block G1 is provided on the front side of the processing station 11 (the negative direction side in the X direction in FIG. 1), and a second side is provided on the back side of the processing station 11 (the positive direction side in the X direction in FIG. 1). Block G2. A third block G3 is provided on the wafer boat station 10 side of the processing station 11 (the negative direction side in the Y direction in FIG. 1), and on the interface station 13 side of the processing station 11 (the positive direction side in the Y direction in FIG. 1). , With the fourth block G4.
如圖2所示，例如，於第1區塊G1，從下方起依序配置複數個液體處理裝置，例如依序配置：顯影處理裝置30，對晶圓W進行顯影處理；下部反射防止膜形成裝置31，於晶圓W的光阻膜的下層形成反射防止膜(以下稱「下部反射防止膜」)；光阻塗布裝置32，對晶圓W塗布光阻液而形成光阻膜；及上部反射防止膜形成裝置33，於晶圓W的光阻膜的上層形成反射防止膜(以下稱「上部反射防止膜」)。As shown in FIG. 2, for example, in the first block G1, a plurality of liquid processing devices are sequentially arranged from the bottom, for example, in order: the development processing device 30 performs a development process on the wafer W; and a lower reflection prevention film is formed. The device 31 forms an anti-reflection film (hereinafter referred to as "lower anti-reflection film") on the lower layer of the photoresist film of the wafer W; the photoresist coating device 32 applies a photoresist liquid to the wafer W to form a photoresist film; and an upper portion The anti-reflection film forming device 33 forms an anti-reflection film (hereinafter referred to as an "upper anti-reflection film") on the upper layer of the photoresist film of the wafer W.
例如，顯影處理裝置30、下部反射防止膜形成裝置31、光阻塗布裝置32及上部反射防止膜形成裝置33，各自於水平方向排列4個而配置。又，此等顯影處理裝置30、下部反射防止膜形成裝置31、光阻塗布裝置32及上部反射防止膜形成裝置33的數量或配置，可任意選擇。For example, each of the development processing device 30, the lower anti-reflection film forming device 31, the photoresist coating device 32, and the upper anti-reflection film forming device 33 is arranged in an array in the horizontal direction. In addition, the number or arrangement of the development processing device 30, the lower reflection preventing film forming device 31, the photoresist coating device 32, and the upper reflection preventing film forming device 33 can be arbitrarily selected.
於此等顯影處理裝置30、下部反射防止膜形成裝置31、光阻塗布裝置32及上部反射防止膜形成裝置33中，例如，進行將既定塗布液塗布於晶圓W上之旋轉塗布。於旋轉塗布中，例如，從塗布噴嘴對晶圓W上噴出塗布液，並使晶圓W旋轉，以使塗布液擴散於晶圓W表面。In the development processing device 30, the lower reflection preventing film forming device 31, the photoresist coating device 32, and the upper reflection preventing film forming device 33, for example, spin coating is performed by applying a predetermined coating liquid on the wafer W. In spin coating, for example, a coating liquid is sprayed onto a wafer W from a coating nozzle, and the wafer W is rotated to spread the coating liquid on the surface of the wafer W.
如圖3所示，例如，於第2區塊G2，於上下方向等排列設置如下述裝置：熱處理裝置40，進行晶圓W的加熱或冷卻等的熱處理；附著裝置41，用以提高光阻液與晶圓W的附著性；周邊曝光裝置42，將晶圓W的外周部予以曝光。此等熱處理裝置40、附著裝置41、周邊曝光裝置42的數量或配置，亦可任意選擇。As shown in FIG. 3, for example, in the second block G2, the following devices are arranged in an up-down direction and the like: a heat treatment device 40 for performing heat treatment such as heating or cooling of the wafer W; and an attachment device 41 for increasing photoresist Adhesion of the liquid to the wafer W; The peripheral exposure device 42 exposes the outer peripheral portion of the wafer W. The number or arrangement of these heat treatment apparatuses 40, attachment apparatuses 41, and peripheral exposure apparatuses 42 can also be arbitrarily selected.
例如，於第3區塊G3，設有將複數傳送裝置等疊層而成的棚架單元。又，於第4區塊G4，亦設有將複數傳送裝置等疊層而成的棚架單元。For example, the third block G3 is provided with a shelving unit formed by stacking a plurality of transfer devices and the like. In addition, in the fourth block G4, a shelving unit formed by stacking a plurality of transfer devices and the like is also provided.
如圖1所示，於由第1區塊G1～第4區塊G4所圍的區域，形成晶圓搬運區R。As shown in FIG. 1, a wafer transfer area R is formed in an area surrounded by the first block G1 to the fourth block G4.
又，如圖1所示，於第3區塊G3的X方向正方向側的旁邊，設置晶圓搬運裝置100。晶圓搬運裝置100具有可於例如X方向、θ方向及上下方向移動自如的搬運臂100a。晶圓搬運裝置100以藉由搬運臂100a支撐晶圓W的狀態上下移動，可將晶圓W搬運至第3區塊G3內的各傳送裝置。As shown in FIG. 1, a wafer transfer device 100 is provided beside the X-direction positive side of the third block G3. The wafer transfer apparatus 100 includes a transfer arm 100 a that can move freely in the X direction, the θ direction, and the up-down direction, for example. The wafer transfer apparatus 100 moves up and down while supporting the wafer W by the transfer arm 100a, and can transfer the wafer W to each transfer device in the third block G3.
於介面站13，設有晶圓搬運裝置110及傳送裝置111。晶圓搬運裝置110具有可於例如Y方向、θ方向及上下方向移動自如的搬運臂110a。晶圓搬運裝置110例如，將晶圓W支撐於搬運臂110a，可於第4區塊G4內的各傳送裝置、傳送裝置111及曝光裝置12之間搬運晶圓W。The interface station 13 is provided with a wafer transfer device 110 and a transfer device 111. The wafer transfer apparatus 110 includes, for example, a transfer arm 110 a that is movable in the Y direction, the θ direction, and the up-down direction. The wafer transfer device 110 supports, for example, the wafer W on the transfer arm 110 a and can transfer the wafer W between each transfer device, the transfer device 111, and the exposure device 12 in the fourth block G4.
針對晶圓搬運區R更進一步說明。如圖4所示，晶圓搬運區R係將4個搬運區R1～R4由下依序疊層而構成，搬運區R1～R4各自形成為於從第3區塊G3側往第4區塊G4側的方向(圖4的Y方向正方向)延伸。如圖5所示，於搬運區R1～R4的寬度方向的一側，配置光阻塗布裝置32等的液體處理裝置，而於另一側，配置例如熱處理裝置40。有時亦有配置附著裝置41或周邊曝光裝置42以取代熱處理裝置40的情形。The wafer transfer area R will be further described. As shown in FIG. 4, the wafer transfer area R is formed by stacking four transfer areas R1 to R4 in order from below, and the transfer areas R1 to R4 are each formed from the third block G3 side to the fourth block. The direction on the G4 side (the positive direction in the Y direction in FIG. 4) extends. As shown in FIG. 5, a liquid processing device such as a photoresist coating device 32 is disposed on one side in the width direction of the conveying areas R1 to R4, and a heat treatment device 40 is disposed on the other side, for example. In some cases, an attachment device 41 or a peripheral exposure device 42 may be provided instead of the heat treatment device 40.
又，於搬運區R1～R4各自設有：導引件301，沿著該搬運區R1～R4的長度方向(圖5的Y方向)延伸；及搬運臂A1～A4，係沿著該導引件301搬運晶圓W的搬運裝置。搬運臂A1～A4係用以於每個搬運區R1～R4於與該區域R1～R4相鄰的全部模組間進行晶圓W的傳送。此搬運臂A1～A4(以下，有時總括稱為搬運臂A)具有：框架302，沿著導引件301移動；升降體303，沿著該框架302升降；轉動體304，於該升降體303上轉動；及晶圓支撐部305，於該轉動體304上前進後退。Further, each of the transfer areas R1 to R4 is provided with a guide 301 extending along the longitudinal direction (the Y direction in FIG. 5) of the transfer areas R1 to R4 and the transfer arms A1 to A4 along the guide. The carrier 301 transports the wafer W. The transfer arms A1 to A4 are used to transfer wafers W in each of the transfer areas R1 to R4 between all modules adjacent to the areas R1 to R4. The transfer arms A1 to A4 (hereinafter, collectively referred to as the transfer arm A) include: a frame 302 that moves along the guide 301; a lifting body 303 that moves up and down along the frame 302; a rotating body 304 that is on the lifting body 303 rotates; and the wafer support portion 305 advances and retreats on the rotating body 304.
為了藉由旋轉塗布形成塗布膜，光阻塗布裝置32等的液體處理裝置具有：固持晶圓W使其旋轉的旋轉夾盤201、及供給塗布液的未圖示的塗布液供給噴嘴。又，上述液體處理裝置具有：杯體202，包圍晶圓W並將從晶圓W飛散的塗布液予以回收；及過濾器203，設於該杯體202的上方並對杯體202內供給潔淨空氣。In order to form a coating film by spin coating, a liquid processing device such as a photoresist coating device 32 includes a spin chuck 201 that holds and rotates a wafer W, and a coating liquid supply nozzle (not shown) that supplies a coating liquid. The liquid processing apparatus includes a cup 202 that surrounds the wafer W and recovers the coating liquid scattered from the wafer W; and a filter 203 that is provided above the cup 202 and cleans the inside of the cup 202. air.
熱處理裝置40具有：熱板401，加熱晶圓W；板件402，於該熱板401與搬運臂A1～A4之間傳送晶圓W並使晶圓W冷卻；整流板403，設於熱板401的上方；排氣部404、405，使搬運區R1～R4及熱處理裝置40內排氣。於從上計數為第2個、第4個、第6個、第8個的熱處理裝置40的下方，設置使搬運區R1～R4排氣的風扇裝置406。The heat treatment device 40 includes a hot plate 401 that heats the wafer W, a plate 402 that transfers the wafer W between the hot plate 401 and the transfer arms A1 to A4 and cools the wafer W, and a rectifying plate 403 that is provided on the hot plate. Above 401; exhaust sections 404 and 405 exhaust the conveyance zones R1 to R4 and the heat treatment device 40. Below the second, fourth, sixth, and eighth heat treatment apparatuses 40 counted from above, a fan device 406 is provided to exhaust the conveyance zones R1 to R4.
針對處理站11進一步說明。處理站11具備框體51，於該框體51內收納有上述各裝置，框體51內由每個搬運區R1～R4所分隔。於框體51上設有風機過濾機組單元(FFU)52，於該FFU52，連接有形成為上下延伸並橫跨搬運區R1～R4的垂直導管53。此垂直導管53連接至沿著各搬運區R1～R4的長度方向延伸的水平導管54。The processing station 11 will be further described. The processing station 11 includes a frame 51 in which the above-mentioned devices are housed, and the frame 51 is partitioned by each of the transport areas R1 to R4. A fan filter unit (FFU) 52 is provided on the casing 51, and a vertical duct 53 formed to extend up and down and across the conveyance zones R1 to R4 is connected to the FFU 52. This vertical duct 53 is connected to a horizontal duct 54 extending along the longitudinal direction of each of the transfer areas R1 to R4.
水平導管54設於各搬運區R1～R4中的光阻塗布裝置32等液體處理裝置側的緣部的上方。又，水平導管54於內部具有未圖示的ULPA過濾器。從上述風機過濾機組單元52送來的空氣，直接或經由垂直導管53，流入水平導管54，藉由ULPA過濾器予以潔淨化，而從水平導管54供給至下方。The horizontal duct 54 is provided above the edge portion on the liquid processing device side such as the photoresist coating device 32 in each of the conveyance zones R1 to R4. The horizontal duct 54 has a ULPA filter (not shown) inside. The air sent from the fan filter unit 52 flows into the horizontal duct 54 directly or through the vertical duct 53, is cleaned by the ULPA filter, and is supplied from the horizontal duct 54 to the lower side.
又，於水平導管54下方，設有分隔板55。此分隔板55形成各搬運區R1～R4的頂板面，於內部具有將從水平導管54所供給的空氣加以擴散的氣體擴散室(未圖示)。再者，於分隔板55底面，全面形成多數噴出口，該多數噴出口用以將於氣體擴散室擴散的空氣噴出至搬運區R1～R4。 通過水平導管54的ULPA過濾器且微粒被去除而潔淨化的空氣，流入至分隔板55的氣體擴散室，經由噴出口，而往下方噴出。如此，於各搬運區R1～R4中，形成由潔淨化空氣所成的下降氣流。A partition plate 55 is provided below the horizontal duct 54. This partition plate 55 forms a top plate surface of each of the transfer areas R1 to R4, and has a gas diffusion chamber (not shown) therein that diffuses air supplied from the horizontal duct 54. Furthermore, a plurality of ejection outlets are formed on the bottom surface of the partition plate 55, and the plurality of ejection outlets are used to eject the air diffused from the gas diffusion chamber to the transfer areas R1 to R4. The air that has passed through the ULPA filter of the horizontal duct 54 and has been cleaned by removing particulates flows into the gas diffusion chamber of the partition plate 55 and is ejected downward through the ejection port. In this way, in each of the conveyance zones R1 to R4, a downflow of clean air is formed.
處理站11利用上述潔淨化空氣所成的下降氣流，使懸浮微粒往下方流下，經由風扇裝置406而排出至外部。於此處理站11中，為了使各搬運區R1～R4內的環境氣體更潔淨化，於搬運區R1～R4內各自設有音波發射裝置。具體而言，於搬運區R1～R4中之與光阻塗布裝置32等的液體處理裝置的晶圓W的搬入/搬出口K1相鄰的區域，設置音波發射裝置60，於搬運區R1～R4中之與熱處理裝置40的晶圓W的搬入/搬出口K2相鄰的區域，設置音波發射裝置70。音波發射裝置60、70例如設置為從上述搬入/搬出口K1、K2的上方，朝著設有排氣用的風扇裝置406的搬運區R1～R4的底部發出音波。The processing station 11 uses the downdraft formed by the clean air to cause the suspended particulates to flow downward, and then discharges them to the outside through the fan device 406. In this processing station 11, in order to make the ambient gas in each of the transfer areas R1 to R4 cleaner, sonic emission devices are respectively provided in the transfer areas R1 to R4. Specifically, the sonic emission device 60 is provided in a region adjacent to the loading / unloading port K1 of the wafer W of the liquid processing device such as the photoresist coating device 32 in the transfer areas R1 to R4, and the transfer areas R1 to R4 Among the regions adjacent to the loading / unloading port K2 of the wafer W of the heat treatment apparatus 40, a sonic emitting device 70 is provided. The sound wave emitting devices 60 and 70 are provided, for example, from above the carrying-in / carrying-out ports K1 and K2 and emit sound waves toward the bottoms of the transporting areas R1 to R4 provided with the exhaust fan device 406.
藉由從音波發射裝置60、70往底部方向所發射的音波，可使存在於上述搬入/搬出口附近等的懸浮微粒往下方移動，經由風扇裝置406而往外部排出。The sound waves emitted from the sound wave emitting devices 60 and 70 toward the bottom can move the aerosol particles existing near the above-mentioned loading / unloading port downward, and can be discharged to the outside through the fan device 406.
又，藉由如上所述設置上述音波發射裝置60、70，於液體處理裝置及熱處理裝置40與搬運臂A1～A4間的晶圓W之傳送時，可防止微粒從液體處理裝置及熱處理裝置40侵入至搬運區R1～R4，或微粒從搬運區R1～R4侵入至液體處理裝置及熱處理裝置40。 再者，藉由設置音波發射裝置60、70，於維修時，即使因搬運區R1～R4的開啟等造成微粒侵入、或因人的動作而產生微塵等而使潔淨度惡化，亦可迅速恢復原本的潔淨度。 又，搬入/搬出口K1、K2構成為可根據後述控制部500的控制而任意開閉。Furthermore, by providing the above-mentioned sonic emission devices 60 and 70 as described above, particles can be prevented from being transferred from the liquid processing device and the heat treatment device 40 when the wafer W between the liquid processing device and the heat treatment device 40 and the transfer arms A1 to A4 is transferred. Intrusion into the transfer areas R1 to R4, or ingress of particles from the transfer areas R1 to R4 into the liquid processing apparatus and heat treatment apparatus 40. Furthermore, by installing the sound wave emitting devices 60 and 70, during maintenance, even if the cleanliness is deteriorated due to the intrusion of particles due to the opening of the conveying areas R1 to R4, etc., or the generation of dust due to human actions, it can be quickly restored Original cleanliness. The loading / unloading ports K1 and K2 are configured to be opened and closed arbitrarily under the control of the control unit 500 described later.
於圖例中，係對於熱處理裝置40的2個搬入/搬出口K2設置1個音波發射裝置70，但亦可對2個搬入/搬出口K2分別設置1個音波發射裝置70。 又，音波發射裝置70亦可設置成不朝著搬運區R1～R4的底部側發出音波，而是朝著設有排氣部404、405的熱處理裝置40的外側邊發出音波。藉此，可使熱處理裝置40的搬入/搬出口附近的微粒往外側邊移動，而經由排氣部404、405排出至外部。In the illustration, one acoustic wave emitting device 70 is provided for two carrying-in / carrying-out ports K2 of the heat treatment device 40, but one acoustic wave emitting device 70 may be provided for each of the two carrying-in / carrying-out ports K2. Further, the sound wave emitting device 70 may be provided so as not to emit sound waves toward the bottom side of the conveyance zones R1 to R4, but to emit sound waves toward the outer side of the heat treatment device 40 provided with the exhaust portions 404 and 405. Thereby, the microparticles | fine-particles in the vicinity of the carrying-in / carrying-out port of the heat processing apparatus 40 can be moved to an outer side, and can be discharged | emitted to the exterior through the exhaust parts 404 and 405.
圖6係音波發射裝置60的一例的俯視圖。 音波發射裝置60係藉由使用超音波而發出具有指向性的音波的參數喇叭，將發出超音波的複數轉換器61排列於平板狀的底座62，而構成參數陣列。例如，藉由使轉換器61朝下的方式，將底座62固定於搬運區R1～R4的頂棚附近，而設置音波發射裝置60。 音波發射裝置60所發出的音波，可為可聽範圍的頻率，亦可為具有例如20kHz以上頻率的超音波。FIG. 6 is a plan view of an example of the acoustic wave emitting device 60. The acoustic wave transmitting device 60 is a parametric speaker that emits a directional sound wave by using an ultrasonic wave, and a complex converter 61 that emits an ultrasonic wave is arranged on a flat base 62 to form a parameter array. For example, the base 62 is fixed near the ceiling of the conveyance areas R1 to R4 with the converter 61 facing downward, and a sound wave emitting device 60 is provided. The sound wave emitted by the sound wave transmitting device 60 may be a frequency in an audible range, or may be an ultrasonic wave having a frequency of, for example, 20 kHz or more.
因可藉由以參數喇叭構成音波發射裝置60，而使懸浮微粒往期望的方向移動，故可將該懸浮微粒確實往外部排出而去除。 又，於圖例中，係排列縱4個×橫8個之合計32個轉換器61，但轉換器61的數量或配置不限於此例。 又，音波發射裝置70的構成因與音波發射裝置60相同，故省略其說明。Since the acoustic wave emitting device 60 is constituted by a parameter horn, the suspended particles can be moved in a desired direction, so the suspended particles can be surely discharged to the outside and removed. Moreover, in the illustration, 32 converters 61 are arranged in a total of 4 vertical × 8 horizontal, but the number or arrangement of the converters 61 is not limited to this example. Since the configuration of the acoustic wave transmitting device 70 is the same as that of the acoustic wave transmitting device 60, description thereof will be omitted.
如圖1所示，於由以上各裝置所成的基板處理系統1，設有控制部500。控制部500為例如電腦，具有程式儲存部(未圖示)。於程式儲存部，儲存有用以控制基板處理系統1中的晶圓W的處理的程式。又，於程式儲存部，亦儲存有用以控制上述各種處理裝置或搬運裝置等的驅動系統的動作，以實現基板處理系統1中之後述塗布處理的程式。又，該程式可記錄於例如電腦可讀取的硬碟(HD)、軟碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等電腦可讀取的記錄媒體H，亦可從該記錄媒體安裝於控制部500。As shown in FIG. 1, a control unit 500 is provided in the substrate processing system 1 formed by each of the above devices. The control unit 500 is, for example, a computer and includes a program storage unit (not shown). In the program storage section, a program for controlling the processing of the wafer W in the substrate processing system 1 is stored. The program storage section also stores programs for controlling the operations of the driving systems such as the above-mentioned various processing apparatuses and conveying apparatuses to realize the coating processing described later in the substrate processing system 1. The program can be recorded on a computer-readable recording medium H such as a hard disk (HD), a flexible disk (FD), a compact disc (CD), a magneto-optical disk (MO), or a memory card that can be read by a computer, or The recording medium is mounted on the control unit 500.
其次，說明使用如上所述構成的基板處理系統1而進行的晶圓處理。首先，將收納複數晶圓W的晶舟C搬入至基板處理系統1的晶舟站10，再藉由晶圓搬運裝置23將晶舟C內的各晶圓W依序搬運至處理站11的第3區塊G3的傳送裝置。Next, wafer processing using the substrate processing system 1 configured as described above will be described. First, the wafer boat C containing the plurality of wafers W is transferred to the wafer boat station 10 of the substrate processing system 1, and then each wafer W in the wafer boat C is sequentially transferred to the processing station 11 by the wafer transfer device 23. The transmission device of the third block G3.
其次，藉由處理站11的搬運區R2的搬運臂A2將晶圓W搬運至熱處理裝置40。與此搬運之同時，將與搬運區R2相鄰之第2區塊G2的熱處理裝置40的搬入/搬出口K2開啟，配合此開啟動作，從音波發射裝置70往搬運區R2的底部發射音波。最好從搬入/搬出口K2的開啟動作開始前，使音波發射開始。 於從音波發射裝置70發射音波的狀態下，將搬運臂A2的晶圓支撐部305插入至熱處理裝置40內，而將晶圓W傳送至該熱處理裝置40的板件402。於傳送後，將搬運臂A2的晶圓支撐部305從熱處理裝置40內拉出，關閉搬入/搬出口K2，並停止來自音波發射裝置70的音波發射。之後，藉由熱處理裝置40，對晶圓W進行溫度調節處理。Next, the wafer W is transferred to the heat treatment apparatus 40 by the transfer arm A2 of the transfer area R2 of the processing station 11. At the same time as the carrying, the carrying-in / carrying-out port K2 of the heat treatment device 40 in the second block G2 adjacent to the carrying area R2 is opened, and in accordance with this opening operation, a sound wave is emitted from the sonic transmitting device 70 to the bottom of the carrying area R2. It is preferable to start the sound wave transmission before the opening operation of the loading / unloading port K2 is started. In a state where the sound wave is emitted from the sound wave emitting device 70, the wafer support portion 305 of the transfer arm A2 is inserted into the heat treatment device 40, and the wafer W is transferred to the plate 402 of the heat treatment device 40. After the transfer, the wafer support portion 305 of the transfer arm A2 is pulled out of the heat treatment apparatus 40, the carry-in / carry-out port K2 is closed, and the sonic emission from the sonic emission device 70 is stopped. Thereafter, the wafer W is subjected to a temperature adjustment process by the heat treatment apparatus 40.
於溫度調節處理後，使熱處理裝置40的搬入/搬出口K2開啟，配合此開啟動作，從音波發射裝置70發射音波。於從音波發射裝置70發射音波的狀態下，將搬運臂A2的晶圓支撐部305插入至熱處理裝置40內，而使晶圓W從該熱處理裝置40的板件402傳送至晶圓支撐部305。於傳送後，將搬運臂A2的晶圓支撐部305從熱處理裝置40內拉出，關閉搬入/搬出口K2，並停止來自音波發射裝置70的音波發射。又，於以下之在熱處理裝置40中之加熱處理時，亦與上述相同，與搬入/搬出口K2的開閉同步，使來自音波發射裝置70的音波發射開始/停止。因此，以下，對於使用熱處理裝置40之加熱處理時所進行的音波發射，省略其說明。After the temperature adjustment process, the carry-in / carry-out port K2 of the heat treatment device 40 is opened, and in accordance with this opening action, a sound wave is emitted from the sound wave emission device 70. In a state in which sound waves are emitted from the sonic emission device 70, the wafer support portion 305 of the transfer arm A2 is inserted into the heat treatment device 40, and the wafer W is transferred from the plate 402 of the heat treatment device 40 to the wafer support portion 305 . After the transfer, the wafer support portion 305 of the transfer arm A2 is pulled out of the heat treatment apparatus 40, the carry-in / carry-out port K2 is closed, and the sonic emission from the sonic emission device 70 is stopped. In addition, in the following heat treatment in the heat treatment device 40, the sound wave emission from the sound wave emission device 70 is started / stopped in synchronization with the opening / closing of the loading / unloading port K2, as described above. Therefore, hereinafter, the description of the sound wave emission during the heat treatment using the heat treatment device 40 is omitted.
其後，藉由搬運臂A2將晶圓W搬運至下部反射防止膜形成裝置31。與此搬運之同時，下部反射防止膜形成裝置31的搬入/搬出口K1開啟，配合此開啟動作，將音波從音波發射裝置60朝搬運區R2的底部發射。最好於搬入/搬出口K1的開啟動作開始前，使音波發射開始進行。 於從音波發射裝置60發射音波的狀態下，將搬運臂A2的晶圓支撐部305插入至下部反射防止膜形成裝置31內，而將晶圓傳送至該下部反射防止膜形成裝置31的晶圓傳送用的插銷(未圖示)。於傳送後，使搬運臂A2的晶圓支撐部305從下部反射防止膜形成裝置31內拉出，關閉搬入/搬出口K1，並停止來自音波發射裝置60的音波發射。之後，藉由下部反射防止膜形成裝置31而於晶圓W上形成下部反射防止膜。Thereafter, the wafer W is transferred to the lower anti-reflection film forming apparatus 31 by the transfer arm A2. At the same time as the carrying, the carrying-in / carrying-out port K1 of the lower anti-reflection film-forming device 31 is opened, and in accordance with this opening action, the sound waves are emitted from the sound wave emitting device 60 toward the bottom of the carrying area R2. It is preferable to start the sound wave emission before the opening operation of the carry-in / carry-out port K1 starts. In a state where sound waves are emitted from the sound wave emitting device 60, the wafer support portion 305 of the transfer arm A2 is inserted into the lower reflection preventing film forming device 31, and the wafer is transferred to the wafer of the lower reflection preventing film forming device 31 Transfer pin (not shown). After the transfer, the wafer support portion 305 of the transfer arm A2 is pulled out from the lower anti-reflection film forming device 31, the loading / unloading port K1 is closed, and the sound wave emission from the sound wave emitting device 60 is stopped. Thereafter, a lower reflection preventing film is formed on the wafer W by the lower reflection preventing film forming device 31.
下部反射防止膜形成後，使下部反射防止膜形成裝置31的搬入/搬出口K1打開，配合此打開動作，而從音波發射裝置60發射音波。於從音波發射裝置60發射音波的狀態下，將搬運臂A2的晶圓支撐部305插入至下部反射防止膜形成裝置31內，該下部反射防止膜形成裝置31的晶圓傳送用的插銷，將晶圓W傳送至晶圓支撐部305。於傳送後，將搬運臂A2的晶圓支撐部305從下部反射防止膜形成裝置31內拉出，關閉搬入/搬出口K1，並停止來自音波發射裝置60的音波發射。又，於以下之在下部反射防止膜形成裝置31以外的液體處理裝置中之處理時，亦與上述相同，與搬入/搬出口K1的開閉同步，使來自音波發射裝置60的音波發射開始/停止。因此，以下，針對利用液體處理裝置的加熱處理時所進行的音波發射，省略其說明。After the lower anti-reflection film is formed, the carrying-in / carry-out port K1 of the lower anti-reflection film forming device 31 is opened, and in accordance with this opening operation, a sound wave is emitted from the sound wave emitting device 60. In a state where the sound wave is emitted from the sound wave emitting device 60, the wafer support portion 305 of the transfer arm A2 is inserted into the lower anti-reflection film forming device 31. The wafer W is transferred to the wafer support portion 305. After the transfer, the wafer support portion 305 of the transfer arm A2 is pulled out from the lower anti-reflection film forming device 31, the carry-in / carry-out port K1 is closed, and the sound wave emission from the sound wave emitting device 60 is stopped. Also, in the following processing in a liquid processing apparatus other than the lower reflection preventing film forming apparatus 31, the same as above, the opening / closing of the carry-in / carry-out port K1 is synchronized to start / stop the sound wave emission from the sound wave emission device 60 . Therefore, in the following, description of the sound wave emission during the heat treatment by the liquid processing device is omitted.
其後，藉由搬運臂A2，將晶圓W搬運至與搬運區R2相鄰的熱處理裝置40內，進行加熱處理及溫度調節。 接著，藉由搬運臂A2，將晶圓W搬運至與搬運區R2相鄰的附著裝置41，而進行附著處理。又，雖省略圖示，但於附著裝置41亦設有晶圓W的搬入/搬出口，於搬運區R2之與上述搬入/搬出口相鄰的區域，設有音波發射裝置。又，於利用附著裝置41所進行之附著處理時，與利用熱處理裝置40所進行之加熱處理時相同，與搬入/搬出口的開閉同步，使來自音波發射裝置的音波發射開始/停止。Thereafter, the wafer W is transferred into the heat treatment apparatus 40 adjacent to the transfer area R2 by the transfer arm A2, and heat treatment and temperature adjustment are performed. Next, the wafer W is transferred to the attachment device 41 adjacent to the transfer area R2 by the transfer arm A2 to perform an attachment process. Although not shown in the drawings, a wafer W loading / unloading port is also provided in the attachment device 41, and a sound wave emitting device is provided in a region adjacent to the loading / unloading port in the transfer zone R2. In addition, the attachment process by the attachment device 41 is the same as the heat treatment by the heat treatment device 40, and the sound wave emission from the sound wave emission device is started / stopped in synchronization with the opening / closing of the loading / unloading port.
其後，藉由搬運臂A2，將晶圓W搬運至與搬運區R2相鄰的第4區塊G4的傳送裝置。接著，藉由晶圓搬運裝置110，將晶圓W搬運至與搬運區R3相鄰的第4區塊G4的另一傳送裝置。之後，藉由搬運區R3內的搬運臂A3，將晶圓W搬運至光阻塗布裝置32，於晶圓W上形成光阻膜。其後，藉由搬運臂A3將晶圓W搬運至與搬運區R3相鄰的熱處理裝置40，而進行預烘烤處理。又，於預烘烤處理中，進行與下部反射防止膜形成後的熱處理相同的處理，又，於後述反射防止膜形成後的熱處理、曝光後烘烤處理、事後烘烤處理中，亦進行同樣處理。但是，用於各熱處理的熱處理裝置40彼此不同。Thereafter, the wafer W is transferred to the transfer device of the fourth block G4 adjacent to the transfer region R2 by the transfer arm A2. Next, the wafer transfer device 110 transfers the wafer W to another transfer device in the fourth block G4 adjacent to the transfer area R3. Thereafter, the wafer W is transferred to the photoresist coating device 32 by the transfer arm A3 in the transfer area R3, and a photoresist film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 adjacent to the transfer region R3 by the transfer arm A3 to perform a pre-baking process. In the pre-baking process, the same process as the heat treatment after the formation of the lower antireflection film is performed, and the same is performed in the heat treatment after the formation of the antireflection film described later, the post-exposure baking process, and the post-baking process. deal with. However, the heat treatment apparatuses 40 used for the respective heat treatments are different from each other.
其次，藉由搬運臂A3將晶圓W搬運至與搬運區R3相鄰的第4區塊G4的傳送裝置。接著，藉由晶圓搬運裝置110，將晶圓W搬運至與搬運區R4相鄰的第4區塊G4的另一傳送裝置。之後，藉由搬運區R4內的搬運臂A4，將晶圓W搬運至上部反射防止膜形成裝置33，而於晶圓W上形成上部反射防止膜。其後藉由搬運臂A4，將晶圓W搬運至與搬運區R4相鄰的熱處理裝置40，而進行加熱及溫度調節。其後，藉由搬運臂A4，將晶圓W搬運至與搬運區R4相鄰的周邊曝光裝置42，而進行周邊曝光處理。又，雖省略圖示，但於周邊曝光裝置42亦設有晶圓W的搬入/搬出口，而於搬運區R4中之與上述搬入/搬出口相鄰的區域，設有音波發射裝置。又，於利用周邊曝光裝置42所進行之周邊曝光處理時，亦與利用熱處理裝置40所進行之熱處理時相同，與搬入/搬出口的開閉同步，使來自音波發射裝置的音波發射開始/停止。Next, the wafer W is transferred to the transfer device of the fourth block G4 adjacent to the transfer area R3 by the transfer arm A3. Next, the wafer transfer device 110 transfers the wafer W to another transfer device in the fourth block G4 adjacent to the transfer area R4. Thereafter, the wafer W is transferred to the upper anti-reflection film forming device 33 by the transfer arm A4 in the transport region R4, and an upper anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 adjacent to the transfer area R4 by the transfer arm A4, and heating and temperature adjustment are performed. Thereafter, the wafer W is transferred to the peripheral exposure device 42 adjacent to the transfer area R4 by the transfer arm A4 to perform peripheral exposure processing. Although not shown in the drawings, a wafer W carrying-in / carrying-out port is also provided in the peripheral exposure device 42, and a sound wave emitting device is provided in a region adjacent to the carrying-in / carrying-out port in the transporting area R4. Also, the peripheral exposure processing performed by the peripheral exposure device 42 is the same as the thermal treatment performed by the heat treatment device 40, and the opening / closing of the loading / unloading port is synchronized to start / stop the sound wave emission from the sound wave emitting device.
其次，藉由搬運臂A4將晶圓W搬運至與搬運區R4相鄰的第4區塊的傳送裝置。之後，藉由晶圓搬運裝置110，將晶圓W搬運至曝光裝置12，而以既定圖案進行曝光處理。Next, the wafer W is transferred to the transfer device in the fourth block adjacent to the transfer area R4 by the transfer arm A4. Thereafter, the wafer W is transferred to the exposure device 12 by the wafer transfer device 110, and exposure processing is performed in a predetermined pattern.
其次，藉由晶圓搬運裝置110，將晶圓W搬運至與搬運區R1相鄰的第4區塊G4的傳送裝置。接著，藉由搬運區R1內的搬運臂A1，將晶圓W搬運至與搬運區R1相鄰的熱處理裝置40，而進行曝光後烘烤處理。其後，藉由搬運臂A1，將晶圓W搬運至顯影處理裝置30而進行顯影處理。顯影處理結束後，藉由搬運臂A1，將晶圓W搬運至與搬運區R1相鄰的熱處理裝置40，而進行事後烘烤處理。之後，藉由搬運臂A1，將晶圓W搬運至與搬運區R1相鄰的第3區塊G3的傳送裝置。其後，藉由晶圓搬運裝置23，將晶圓W搬運至晶舟載置板21的晶舟C，而完成一連串的光微影製程。Next, the wafer W is transferred to the transfer device of the fourth block G4 adjacent to the transfer area R1 by the wafer transfer device 110. Next, the transfer arm A1 in the transfer area R1 transfers the wafer W to the heat treatment apparatus 40 adjacent to the transfer area R1, and performs post-exposure bake processing. Thereafter, the wafer W is transferred to the developing processing apparatus 30 by the carrying arm A1 to perform a developing process. After the development process is completed, the wafer W is transferred to the heat treatment apparatus 40 adjacent to the transfer region R1 by the transfer arm A1 and is subjected to a post-baking process. Thereafter, the wafer W is transferred to the transfer device of the third block G3 adjacent to the transfer region R1 by the transfer arm A1. Thereafter, the wafer transfer device 23 is used to transfer the wafer W to the wafer boat C of the wafer boat mounting plate 21 to complete a series of photolithography processes.
於以上例中，與開閉同步，從音波發射裝置70發射音波，但音波發射的時機不限於此例。例如，可於晶圓W存於處理站11內時經常地發射亦可，具體而言，亦可於晶圓W搬入至處理站11的第3區塊時開始進行音波的發射，於將晶圓W從第4區塊搬出時，使音波的發射停止。In the above example, sound waves are transmitted from the sound wave transmitting device 70 in synchronization with the opening and closing, but the timing of sound wave transmission is not limited to this example. For example, the wafer W may be emitted frequently when the wafer W is stored in the processing station 11. Specifically, the wafer W may be emitted when the wafer W is moved to the third block of the processing station 11. When circle W is carried out from the fourth block, the sound wave emission is stopped.
圖7為音波發射裝置的其他例之側視圖。 圖中音波發射裝置60´，係發出具有指向性的音波的參數喇叭，為了使音波的發出方向為可調整，使音波發射裝置60´以可擺動的方式被支撐。具體而言，音波發射裝置60´中，具有複數轉換器61的底座62´，藉由樞支部63而以可擺動的方式被支撐。又，樞支部63本身由例如由處理站11的框體51所支撐。Fig. 7 is a side view of another example of the acoustic wave transmitting device. In the figure, the sound wave emitting device 60´ is a parameter horn that emits a directional sound wave. In order to make the sound wave emitting direction adjustable, the sound wave emitting device 60´ is supported in a swingable manner. Specifically, in the acoustic wave transmitting device 60 ′, a base 62 ′ having a complex converter 61 is supported in a swingable manner by a pivot support 63. Moreover, the pivot support part 63 itself is supported by the housing 51 of the processing station 11, for example.
如此，藉由以可擺動的方式支撐音波發射裝置60´，可使用小的物體作為音波發射裝置60´，可防止基板處理系統1的製造成本的大幅上升。 音波發射裝置60´例如藉由控制部500控制成可週期性地擺動。In this way, by supporting the acoustic wave emitting device 60´ in a swingable manner, a small object can be used as the acoustic wave emitting device 60´, and it is possible to prevent the manufacturing cost of the substrate processing system 1 from increasing significantly. The sound wave emitting device 60 'is controlled to be periodically swingable by the control unit 500, for example.
(第1實施形態的其他例) 圖8係本發明的第1實施形態的基板處理系統的其他例的概略說明圖，為僅顯示晶舟站的前視圖。 於圖5等之例中，於處理站11的搬運區R1～R4，設置音波發射裝置60、70。相對於此，於圖8之例中，於晶舟站10’的搬運區L設置音波發射裝置80。具體而言，晶舟站10’具有框體56，該框體56因具有對著載置於晶舟載置台20的晶舟C的搬入/搬出口K3，故於與搬運區L內的上述搬入/搬出口K3相鄰的區域，設置音波發射裝置80。(Another Example of the First Embodiment) FIG. 8 is a schematic explanatory view of another example of the substrate processing system according to the first embodiment of the present invention, and is a front view showing only the wafer boat station. In the example shown in FIG. 5 and the like, sound wave emitting devices 60 and 70 are provided in the transporting areas R1 to R4 of the processing station 11. On the other hand, in the example of FIG. 8, a sound wave emitting device 80 is provided in the handling area L of the wafer boat station 10 '. Specifically, the wafer boat station 10 ′ has a frame 56 having a loading / unloading port K3 facing the wafer boat C placed on the boat mounting table 20. A sound wave emitting device 80 is provided in a region adjacent to the loading / unloading port K3.
如此，藉由將音波發射裝置80設置於晶舟站10’的搬運區L，於從晶舟C搬出晶圓W或將晶圓W搬入至晶舟C時，可防止微粒從晶舟C侵入至搬運區L、或微粒從搬運區L侵入至晶舟C。 又，音波發射裝置80的構成，例如可採用與圖6的音波發射裝置60相同的構成。又，亦可將音波發射裝置80如圖8地設於搬入/搬出口K3的附近，亦可設於搬入/搬出口K3上方且為頂板面的附近。In this way, by arranging the sonic emission device 80 in the handling area L of the wafer boat station 10 ′, it is possible to prevent particles from entering the wafer boat C when the wafer W is moved out of the wafer boat C or the wafer W is transferred into the wafer boat C. To the transfer area L, or particles enter the wafer boat C from the transfer area L. The configuration of the acoustic wave transmitting device 80 can be, for example, the same as that of the acoustic wave transmitting device 60 of FIG. 6. Further, the sonic emission device 80 may be provided near the carry-in / carry-out port K3 as shown in FIG. 8, or may be provided near the carry-in / carry-out port K3 and near the top surface.
雖省略圖示，但對於晶舟站10’亦設置FFU單元，並將用以使搬運區L內的環境氣體排出的排氣機構，設於晶舟站10’的底部。音波發射裝置80例如設置為：從搬入/搬出口K3的上方，朝著設有排氣機構的搬運區L的底部發出音波。Although the illustration is omitted, an FFU unit is also provided for the wafer boat station 10 ', and an exhaust mechanism for exhausting the ambient gas in the transfer area L is provided at the bottom of the wafer boat station 10'. The sound wave emitting device 80 is provided, for example, to emit sound waves from above the carrying-in / carrying-out port K3 toward the bottom of the carrying area L provided with the exhaust mechanism.
(第1實施形態的另一例) 於以上之例中，音波發射裝置僅設於搬運區中之與晶圓的搬入/搬出口相鄰的區域，但設置音波發射裝置的區域不限於上述例。例如，亦可於不妨礙搬運區之來自頂板面的下降氣流之範圍下，以覆蓋該頂板面整體的方式設置音波發射裝置。又，亦可於處理站11的搬運區R1～R4的寬度方向中央，沿著長度方向設置複數音波發射裝置。再者，亦可沿著搬運區的寬度方向設置複數音波發射裝置。 又，亦可於搬運區中之與第3區塊G3或第4區塊G4的傳送裝置相鄰的區域，設置音波發射裝置。(Another example of the first embodiment) In the above example, the acoustic wave emitting device is provided only in the area adjacent to the wafer loading / unloading port in the transfer area, but the area where the acoustic wave emitting device is provided is not limited to the above example. For example, a sound wave emitting device may be provided so as to cover the entire top plate surface in a range that does not hinder the downdraft from the top plate surface in the conveying area. In addition, a plurality of acoustic wave emitting devices may be provided in the center of the width direction of the transfer areas R1 to R4 of the processing station 11 along the length direction. Furthermore, a plurality of sound wave emitting devices may be provided along the width direction of the conveyance area. Further, a sound wave transmitting device may be provided in an area adjacent to the transmission device in the third block G3 or the fourth block G4 in the transfer area.
(第1實施形態的其他另一例) 圖9係本發明的第1實施形態之基板處理系統之其他另一例的說明圖，圖9(A)係顯示本例的基板搬運裝置的周邊模樣，圖9(B)係安裝於圖9(A)的基板搬運裝置的音波發射裝置的部分圖。 於圖5等之例中，音波發射裝置安裝於處理站11的框體51。相對於此，於本例中，如圖9(A)所示，音波發射裝置600係安裝於基板搬運臂A的外側邊。(Another Example of the First Embodiment) FIG. 9 is an explanatory diagram of another example of the substrate processing system according to the first embodiment of the present invention, and FIG. 9 (A) is a diagram showing the periphery of the substrate conveying device of this example. 9 (B) is a partial view of a sound wave emitting device mounted on the substrate transfer device of FIG. 9 (A). In the example of FIG. 5 and the like, the sound wave transmitting device is mounted on the housing 51 of the processing station 11. On the other hand, in this example, as shown in FIG. 9 (A), the sound wave emitting device 600 is mounted on the outer side of the substrate carrying arm A.
安裝於基板搬運臂A的音波發射裝置600，具有第1音波發射單元610及第2音波發射單元620。 第1音波發射單元610及第2音波發射單元620，各自為藉由使用超音波而發出具有指向性的音波的參數喇叭，具有：複數轉換器611、621，發出超音波；底座構件612、622，用以對基板搬運臂A固定該轉換器611、621。The sound wave emitting device 600 mounted on the substrate carrying arm A includes a first sound wave emitting unit 610 and a second sound wave emitting unit 620. The first sound wave transmitting unit 610 and the second sound wave transmitting unit 620 are parametric speakers that emit directional sound waves by using ultrasonic waves, and include: a plurality of converters 611 and 621 that emit ultrasonic waves; and base members 612 and 622. To fix the converters 611 and 621 to the substrate carrying arm A.
如圖9(B)所示，底座構件612包含：支撐複數轉換器611的支撐面612a；及對著搬運臂A的升降體303的固定面612b。 又，第2音波發射單元620的構成，因與第1音波發射單元610相同，故省略其說明。As shown in FIG. 9 (B), the base member 612 includes a support surface 612a that supports the multiple converter 611, and a fixed surface 612b that faces the lifting body 303 of the transfer arm A. The configuration of the second sound wave transmitting unit 620 is the same as that of the first sound wave transmitting unit 610, and therefore description thereof is omitted.
將來自第1音波發射單元610的音波與來自第2音波發射單元620的音波，共同對載置於搬運臂A的晶圓表面整體發射。但是，第1音波發射單元610之支撐轉換器611之支撐面612a與第2音波發射單元620之支撐轉換器621之支撐面，彼此並非平行。因此，來自第1音波發射單元610的音波的向量V1與來自第2音波發射單元620的音波的向量V2為非平行，兩向量V1、V2的和，成為從搬運臂A的根部朝向前端方向(圖的X方向負方向)的向量V3。因此，於晶圓搬運中，藉由從音波發射裝置600發射音波，可使晶圓表面附近的微粒從晶圓分離而排出至外部，故可防止微粒附著於晶圓。The sound waves from the first sound wave emitting unit 610 and the sound waves from the second sound wave emitting unit 620 are collectively emitted to the entire surface of the wafer placed on the transfer arm A. However, the supporting surface 612a of the supporting converter 611 of the first acoustic wave transmitting unit 610 and the supporting surface of the supporting converter 621 of the second acoustic wave transmitting unit 620 are not parallel to each other. Therefore, the vector V1 of the sound wave from the first sound wave transmitting unit 610 and the vector V2 of the sound wave from the second sound wave transmitting unit 620 are non-parallel, and the sum of the two vectors V1 and V2 becomes the direction from the root of the carrying arm A toward the front end ( X direction (negative direction in the figure) vector V3. Therefore, by transmitting sound waves from the sound wave emitting device 600 during wafer transportation, particles near the surface of the wafer can be separated from the wafer and discharged to the outside, so that particles can be prevented from adhering to the wafer.
又，如圖9(B)所示，將第1音波發射單元610固定於搬運臂A，俾使晶圓W位於由複數轉換器611所成之轉換器群的中心。更具體而言，將第1音波發射單元610固定於搬運臂A，俾使上述轉換器群的長邊方向與晶圓W的表面成平行，且上述轉換器群的短邊方向的中心位於晶圓W表面。針對第2音波發射單元620亦同。As shown in FIG. 9 (B), the first sound wave transmitting unit 610 is fixed to the transfer arm A so that the wafer W is located at the center of a converter group formed by the complex converter 611. More specifically, the first acoustic wave emitting unit 610 is fixed to the carrying arm A so that the long-side direction of the converter group is parallel to the surface of the wafer W, and the center of the short-side direction of the converter group is located on the crystal. Round W surface. The same applies to the second sound wave transmitting unit 620.
於以上例中，將音波發射裝置600安裝於搬運臂A的外側邊。然而，亦可將音波發射裝置安裝於搬運臂A的上方。更具體而言，亦可將音波發射裝置安裝於搬運臂A的晶圓支撐部305的上方。In the above example, the sound wave transmitting device 600 is mounted on the outer side of the carrying arm A. However, the sound wave transmitting device may be mounted above the carrying arm A. More specifically, the sonic emission device may be mounted above the wafer support portion 305 of the transfer arm A.
(第2實施形態) 圖10係本發明的第2實施形態的基板處理系統的概略說明圖，圖10(A)及圖10(B)分別為本實施形態的基板處理系統的分隔板的俯視圖及側視圖。 第2實施形態的基板處理系統，如第1實施形態之基板處理系統，除了於搬運區R1～R4及/或搬運區L具備音波發射裝置之外，搬運區R1～R4及/或搬運區L更具有吸附區。(Second Embodiment) FIG. 10 is a schematic explanatory diagram of a substrate processing system according to a second embodiment of the present invention, and FIGS. 10 (A) and 10 (B) are views of a partition plate of the substrate processing system according to this embodiment, respectively. Top view and side view. The substrate processing system according to the second embodiment, like the substrate processing system according to the first embodiment, has a sonic emission device in the transfer areas R1 to R4 and / or the transfer area L, and the transfer areas R1 to R4 and / or the transfer area L. It also has an adsorption area.
具體而言，例如，如圖10(A)及圖10(B)所示，於形成搬運區R2～R4底面的分隔板55上，安裝有已冷卻的冷卻板700，藉由冷卻板700所為之熱泳效應(Thermophoresis)，高溫度區域的懸浮微粒吸附於冷卻板700。換言之，藉由分隔板55上的冷卻板700而形成吸附區。Specifically, for example, as shown in FIG. 10 (A) and FIG. 10 (B), the cooling plate 700 which has been cooled is mounted on the partition plate 55 forming the bottom surface of the conveying area R2 to R4. Due to the thermophoresis effect, the suspended particles in the high temperature region are adsorbed on the cooling plate 700. In other words, the adsorption area is formed by the cooling plate 700 on the partition plate 55.
冷卻板700例如可藉由使冷卻水於內部循環而被冷卻。但是，冷卻板700的冷卻方法不限於此，例如，亦可利用冷風而使其冷卻。 又，最好於形成搬運區R1底面的底壁上，亦安裝冷卻板700。The cooling plate 700 can be cooled by circulating cooling water inside, for example. However, the cooling method of the cooling plate 700 is not limited to this. For example, the cooling plate 700 may be cooled by cold air. It is also preferable that a cooling plate 700 is also installed on the bottom wall forming the bottom surface of the conveyance area R1.
若於搬運區R1～R4底面設置吸附區，則不僅可捕集懸浮微粒，亦可防止沉積於該底面的微粒旋轉而上。再者，除音波發射裝置外如上所述更設置吸附區，藉此即使於維修時潔淨度變差，仍可更迅速地回到原本的潔淨度。If an adsorption area is provided on the bottom surface of the conveying areas R1 to R4, not only the suspended particles can be trapped, but also the particles deposited on the bottom surface can be prevented from rotating upward. In addition, as described above, in addition to the acoustic emission device, an adsorption area is further provided, so that even if the cleanliness is deteriorated during maintenance, the original cleanliness can be returned more quickly.
又，除了將冷卻板700設於分隔板55或底壁上的方式外，亦可例如使冷卻水於分隔板55內部或底壁內部循環，而於分隔板55或底壁形成冷卻區亦即懸浮微粒的吸附區。Furthermore, in addition to the manner in which the cooling plate 700 is provided on the partition plate 55 or the bottom wall, for example, cooling water may be circulated inside the partition plate 55 or the bottom wall, and cooling may be formed on the partition plate 55 or the bottom wall. This area is also the adsorption area of suspended particles.
圖11係顯示冷卻板的其他例之圖。 圖10的冷卻板700係以覆蓋分隔板55大致全面的方式設於該分隔板55上。相對於此，圖11的冷卻板800，以覆蓋分隔板55的部分的方式，具體而言，以不覆蓋分隔板55的搬運區R2～R4的寬度方向中央而僅覆蓋兩側的方式，而設於分隔板55上。 利用此冷卻板800，亦可吸附懸浮微粒。FIG. 11 is a diagram showing another example of the cooling plate. The cooling plate 700 of FIG. 10 is provided on the partition plate 55 so as to cover the partition plate 55 substantially in its entirety. In contrast, the cooling plate 800 of FIG. 11 covers a portion of the partition plate 55, specifically, does not cover the widthwise center of the transfer areas R2 to R4 of the partition plate 55 and covers only both sides. ， But set on the partition plate 55. The cooling plate 800 can also adsorb suspended particles.
(第2實施形態的其他例) 於以上例中，冷卻板係安裝於分隔板55等之形成搬運區的底壁的部分。然而，冷卻板亦可安裝於形成搬運區的側壁的部分。 又，亦可將冷卻板安裝於搬運臂A。將冷卻板安裝於搬運臂A的情形時，例如，將冷卻板安裝於升降體303。又，對搬運臂A設置排氣機構，排氣係從X軸/θ軸經由Z軸而從Y軸排出。如上所述，藉由將冷卻板安裝於如升降體303等之搬運臂A下部，即使於微粒從搬運臂A的排氣通路外洩的情形，更具體而言，即使於θ‐Z軸管產生微粒外洩的情形，亦可藉由冷卻板吸附微粒。(Other examples of the second embodiment) In the above examples, the cooling plate is attached to a portion of the bottom wall of the conveying area such as the partition plate 55. However, the cooling plate may be mounted on a portion forming a side wall of the transfer area. The cooling plate may be attached to the transfer arm A. When the cooling plate is attached to the transfer arm A, for example, the cooling plate is attached to the lifting body 303. An exhaust mechanism is provided to the transfer arm A, and the exhaust system is discharged from the X-axis / θ-axis through the Z-axis and from the Y-axis. As described above, by installing the cooling plate on the lower part of the transfer arm A such as the lifting body 303, even if the particles leak out from the exhaust passage of the transfer arm A, more specifically, the In the case of leakage of particles, the particles can also be adsorbed by a cooling plate.
(第2實施形態的另一例) 於以上之例中，藉由使用冷卻板的熱泳效應而形成微粒的吸附區。然而，吸附方法不限於上述例，亦可藉由靜電吸附而吸附懸浮微粒。於該情形時，係以帶電的帶電板取代冷卻板，而設於搬運區內。(Another example of the second embodiment) In the above example, the adsorption region of the fine particles is formed by the thermal swimming effect using a cooling plate. However, the adsorption method is not limited to the above examples, and the suspended particles may be adsorbed by electrostatic adsorption. In this case, the cooling plate is replaced by a charged live plate, and it is set in the handling area.
於如本實施形態一樣設置吸附區的情形時，吸附區於既定時機進行清潔，而將所捕集的微粒加以去除。 吸附區的清潔，例如於定期維修時進行。又，亦可監視吸附區的汙染狀況，於有必要清潔時通知使用者，依通報結果而進行吸附區的清潔。 將微粒從吸附區去除，例如，可藉由以抽吸噴嘴手動抽吸而進行，亦可藉由於吸附區周圍設置排氣機構並以該排氣機構自動排出而進行。In the case where an adsorption area is provided as in this embodiment, the adsorption area is cleaned at a predetermined timing, and the trapped particles are removed. Cleaning of the suction area, for example, during regular maintenance. In addition, it is also possible to monitor the pollution status of the adsorption area, notify the user when cleaning is necessary, and clean the adsorption area according to the notified result. The removal of the particles from the adsorption zone can be performed, for example, by manual suction with a suction nozzle, or can be performed by providing an exhaust mechanism around the adsorption zone and automatically discharging the exhaust mechanism.
(第3實施形態) 使用圖12及圖13，說明本發明的第3實施形態的基板處理系統。圖12及圖13係設於本實施形態的基板處理系統的第3區塊的棚架單元的概略說明圖，圖12係棚架單元的側視圖，圖13係設於棚架單元的後述收納區塊的內部俯視圖。(Third Embodiment) A substrate processing system according to a third embodiment of the present invention will be described with reference to Figs. 12 and 13. 12 and 13 are schematic explanatory views of a shelf unit provided in the third block of the substrate processing system of the present embodiment, FIG. 12 is a side view of the shelf unit, and FIG. 13 is a later-described storage provided in the shelf unit Top view of the interior of the block.
第3實施形態的基板處理系統具有另一音波發射裝置，該另一音波發射裝置與搬運區R1～R4及/或搬運區L相鄰，並朝著該搬運區R1～R4及/或搬運區L發射音波。The substrate processing system according to the third embodiment includes another acoustic wave emitting device which is adjacent to the conveying areas R1 to R4 and / or the conveying area L and faces the conveying areas R1 to R4 and / or the conveying area. L emits sound waves.
具體而言，例如，如圖12所示，棚架單元900係為設於與搬運區R1～R4相鄰的第3區塊G3的收容裝置，棚架單元900具有朝著搬運區R1～R4發射音波之另一音波發射裝置910。Specifically, for example, as shown in FIG. 12, the scaffold unit 900 is a storage device provided in the third block G3 adjacent to the conveyance areas R1 to R4, and the scaffold unit 900 has a direction toward the conveyance areas R1 to R4. Another sound wave transmitting device 910 that emits sound waves.
棚架單元900具有為了與搬運區R1～R4對應而區隔出複數個收納區塊B1～B4。圖示雖省略，但於棚架單元900的收納區塊B1～B4各自設有載置架或冷卻板以作為收容晶圓W的收容部。冷卻板係用以將晶圓W調整成既定溫度。 又，棚架單元900具有傳送部TR1、TR2，該傳送部TR1、TR2具有傳送平台，該傳送平台係用以於在第3區塊G3與第4區塊G4間直線搬運晶圓W之未圖示的穿梭搬運裝置和搬運臂A1～A4之間，進行晶圓W的傳送。The shelving unit 900 has a plurality of storage blocks B1 to B4 partitioned so as to correspond to the transport zones R1 to R4. Although not shown in the drawings, each of the storage blocks B1 to B4 of the shelf unit 900 is provided with a mounting rack or a cooling plate as a storage section for storing the wafer W. The cooling plate is used to adjust the wafer W to a predetermined temperature. In addition, the scaffolding unit 900 has a transfer section TR1 and TR2, and the transfer sections TR1 and TR2 have a transfer platform for transferring wafers W in a straight line between the third block G3 and the fourth block G4. The wafer W is transferred between the illustrated shuttle transfer device and the transfer arms A1 to A4.
音波發射裝置910例如可採用與圖6的音波發射裝置60相同的構成。 又，音波發射裝置910係於各收納區塊B1～B4分別設置1個。再者，於本例中，於收納區塊B1中，如圖13所示，以朝著搬運區R1發射音波的方式，將音波發射裝置910設置於：在將晶圓W收容於收納區塊B1時與搬運區R1對向而將該晶圓W夾於其間之位置。收納區塊B2～B4中之音波發射裝置910的配設位置亦相同。The acoustic wave transmitting device 910 can have, for example, the same configuration as the acoustic wave transmitting device 60 of FIG. 6. The acoustic wave transmitting device 910 is provided in each of the storage blocks B1 to B4. Furthermore, in this example, in the storage block B1, as shown in FIG. 13, the sound wave transmitting device 910 is disposed in such a manner that the sound wave is transmitted toward the transfer area R1: the wafer W is stored in the storage block At B1, the wafer W is opposed to the transfer area R1 and the wafer W is sandwiched therebetween. The arrangement positions of the acoustic wave emitting devices 910 in the storage blocks B2 to B4 are also the same.
藉由如本實施形態一般，於棚架單元900設置朝著搬運區R1～R4發射音波的另一音波發射裝置910，可防止存在於搬運區R1～R4的懸浮微粒侵入至棚架單元900內。因此，可防止搬運區R1～R4內的懸浮微粒附著至收容於棚架單元900的晶圓W。By installing another sound wave transmitting device 910 that emits sound waves toward the conveyance areas R1 to R4 in the shelf unit 900 as in the present embodiment, it is possible to prevent suspended particles existing in the conveyance areas R1 to R4 from entering the shelf unit 900. . Therefore, it is possible to prevent the aerosols in the transfer areas R1 to R4 from adhering to the wafer W stored in the rack unit 900.
音波發射裝置910例如配合所對應的搬運臂A1～A4的動作而發射音波。具體而言，音波發射裝置910於從所對應的搬運臂A1的晶圓支撐部305相對於收納區塊B1開始動作時起，亦即，晶圓支撐部305從原點位置開始動作時起至晶圓支撐部305返回至原點位置為止的期間，發射音波。取代於此，音波發射裝置910亦可於所對應的搬運臂A1接近棚架單元900時搬運臂A1停止往棚架單元900的方向(圖1的Y方向負方向)的移動起至晶圓支撐部305返回原點位置為止的期間，發射音波。又，音波發射裝置910亦可經常地發出音波。The sound wave transmitting device 910 emits sound waves in accordance with the operations of the corresponding carrying arms A1 to A4, for example. Specifically, the sonic emission device 910 starts from the time when the wafer support portion 305 of the corresponding transfer arm A1 starts operating with respect to the storage block B1, that is, from the time when the wafer support portion 305 starts operating from the origin position. During the period until the wafer support portion 305 returns to the origin position, sound waves are emitted. Instead of this, the sonic emission device 910 may also stop the movement of the transport arm A1 toward the rack unit 900 (the negative direction in the Y direction in FIG. 1) to the wafer support when the corresponding transport arm A1 approaches the rack unit 900. While the unit 305 returns to the origin position, it emits sound waves. In addition, the sound wave transmitting device 910 may frequently emit sound waves.
音波發射裝置910的音波的發射時機，可為收納區塊B1～B4皆相同，亦可為每一收納區塊B1～B4皆不同。The sound wave transmission timing of the sound wave transmitting device 910 may be the same for the storage blocks B1 to B4, or may be different for each of the storage blocks B1 to B4.
又，於上述例中，係以朝搬運區R1～R4發射音波的方式，設置音波發射裝置910。然而，可附加或取代於此，以朝著搬運區L或存有晶圓搬運裝置100的搬運區發射音波的方式，設置音波發射裝置910。但是，於音波發射裝置910僅設置1個的情形時，最好以朝著搬運區R1～R4發射音波的方式設置。此係因搬運臂中，以搬運臂A1～A4的動作最為頻繁，故於設有該搬運臂A1～A4的搬運區R1～R4存有懸浮微粒的可能性較高。Moreover, in the above-mentioned example, the sound wave transmitting device 910 is provided so as to emit sound waves toward the transfer areas R1 to R4. However, the sound wave transmitting device 910 may be provided in such a manner as to emit sound waves toward the conveyance area L or the conveyance area in which the wafer conveyance device 100 is stored, in addition to or instead of this. However, when only one sound wave transmitting device 910 is provided, it is desirable to install the sound wave toward the transfer areas R1 to R4. In this system, since the movement of the transfer arms A1 to A4 is the most frequent among the transfer arms, there is a high possibility that suspended particles are stored in the transfer areas R1 to R4 provided with the transfer arms A1 to A4.
又，於上述例中，僅於棚架單元900的收納區塊B1～B4設置音波發射裝置910，但亦可於傳送部TR1、TR2同樣設置音波發射裝置910。In the above example, the acoustic wave transmitting device 910 is provided only in the storage blocks B1 to B4 of the shelf unit 900. However, the acoustic wave transmitting device 910 may be provided in the transmission sections TR1 and TR2 in the same manner.
再者，於上述例中，音波發射裝置910係設置於與搬運區R1～R4相鄰的第3區塊G3內的棚架單元900。然而，附加或取代於此，音波發射裝置910亦可設置於與搬運區R1～R4相鄰的第4區塊G4內的棚架單元。Furthermore, in the above-mentioned example, the acoustic wave emitting device 910 is provided in the shelving unit 900 in the third block G3 adjacent to the conveying areas R1 to R4. However, in addition to or instead of this, the sound wave transmitting device 910 may also be provided in a shelving unit in the fourth block G4 adjacent to the conveying areas R1 to R4.
又，第3實施形態中，如第1實施形態的基板處理系統一樣，宜於搬運區具備音波發射裝置。 [產業上的利用可能性]Moreover, in the third embodiment, like the substrate processing system of the first embodiment, it is preferable that the transfer area be provided with a sound wave emitting device. [Industrial availability]
本發明可應用於設有用以搬運基板的基板搬運區的基板處理系統。The present invention can be applied to a substrate processing system provided with a substrate transfer area for transferring substrates.
1‧‧‧基板處理系統1‧‧‧ substrate processing system
10、10’‧‧‧晶舟站10, 10 ’‧‧‧ Jingzhou Station
11‧‧‧處理站11‧‧‧processing station
12‧‧‧曝光裝置12‧‧‧ exposure device
13‧‧‧介面站13‧‧‧Interface Station
20‧‧‧晶舟載置台20‧‧‧ Crystal boat mounting platform
21‧‧‧晶舟載置板21‧‧‧ Crystal Boat Loading Board
22‧‧‧搬運路徑22‧‧‧Transportation path
23‧‧‧晶圓搬運裝置23‧‧‧Wafer Handling Device
30‧‧‧顯影處理裝置30‧‧‧Development processing device
31‧‧‧下部反射防止膜形成裝置31‧‧‧Lower reflection preventing film forming device
32‧‧‧光阻塗布裝置32‧‧‧Photoresist coating device
33‧‧‧上部反射防止膜形成裝置33‧‧‧ Upper reflection preventing film forming device
40‧‧‧熱處理裝置40‧‧‧Heat treatment equipment
41‧‧‧附著裝置41‧‧‧ Attachment
42‧‧‧周邊曝光裝置42‧‧‧Peripheral exposure device
51‧‧‧框體51‧‧‧Frame
52‧‧‧風機過濾機組單元(FFU)52‧‧‧fan filter unit (FFU)
53‧‧‧垂直導管53‧‧‧Vertical Duct
54‧‧‧水平導管54‧‧‧ Horizontal catheter
55‧‧‧分隔板55‧‧‧ divider
56‧‧‧框體56‧‧‧Frame
60、60´‧‧‧音波發射裝置60, 60´‧‧‧ sound wave transmitting device
61‧‧‧轉換器61‧‧‧ converter
62、62´‧‧‧底座62, 62´‧‧‧ base
63‧‧‧樞支部63‧‧‧ pivot branch
70、80‧‧‧音波發射裝置70, 80‧‧‧ sound wave transmitting device
100、110‧‧‧晶圓搬運裝置100, 110‧‧‧wafer handling equipment
100a、110a‧‧‧搬運臂100a, 110a‧‧‧carrying arm
111‧‧‧傳送裝置111‧‧‧Transfer
201‧‧‧旋轉夾盤201‧‧‧Rotary Chuck
202‧‧‧杯體202‧‧‧ cup body
203‧‧‧過濾器203‧‧‧filter
301‧‧‧導引件301‧‧‧Guide
302‧‧‧框架302‧‧‧Frame
303‧‧‧升降體303‧‧‧lifting body
304‧‧‧轉動體304‧‧‧rotating body
305‧‧‧晶圓支撐部305‧‧‧ Wafer support
401‧‧‧熱板401‧‧‧hot plate
402‧‧‧板件402‧‧‧plate
403‧‧‧整流板403‧‧‧rectifier
404、405‧‧‧排氣部404, 405‧‧‧ exhaust
406‧‧‧風扇裝置406‧‧‧fan unit
500‧‧‧控制部500‧‧‧Control Department
600‧‧‧音波發射裝置600‧‧‧ sound wave transmitting device
610‧‧‧第1音波發射單元610‧‧‧1st sound wave transmitting unit
611‧‧‧轉換器611‧‧‧ converter
612‧‧‧底座構件612‧‧‧base member
612a‧‧‧支撐面612a‧‧‧ support surface
612b‧‧‧固定面612b‧‧‧Fixed surface
620‧‧‧第2音波發射單元620‧‧‧Second sound wave transmitting unit
621‧‧‧轉換器621‧‧‧ converter
622‧‧‧底座構件622‧‧‧base member
700、800‧‧‧冷卻板700, 800‧‧‧ cooling plate
900‧‧‧棚架單元900‧‧‧Scaffolding Unit
910‧‧‧音波發射裝置910‧‧‧Sound wave transmitting device
A‧‧‧基板搬運臂A‧‧‧ substrate handling arm
A1～A4‧‧‧搬運臂A1 ～ A4‧‧‧Handling arm
B1～B4‧‧‧收納區塊B1 ～ B4‧‧‧Storage area
C‧‧‧晶舟C‧‧‧ Crystal Boat
G1～G4‧‧‧區塊G1 ～ G4‧‧‧‧block
H‧‧‧記錄媒體H‧‧‧Recording media
K1～K3‧‧‧搬入/搬出口K1 ～ K3‧‧‧‧Moving in / out
L‧‧‧晶圓搬運區L‧‧‧ Wafer Handling Area
R‧‧‧晶圓搬運區R‧‧‧Wafer Handling Area
R1～R4‧‧‧搬運區R1 ～ R4‧‧‧Transportation area
TR1、TR2‧‧‧傳送部TR1, TR2‧‧‧Transfer Department
V1～V3‧‧‧向量V1 ～ V3‧‧‧ vector
W‧‧‧晶圓W‧‧‧ Wafer
【圖1】第1實施形態的基板處理系統的構成概略俯視圖。 【圖2】第1實施形態的基板處理系統的構成概略前視圖。 【圖3】第1實施形態的基板處理系統的構成概略後視圖。 【圖4】第1實施形態的基板處理系統的構成概略縱剖側視圖。 【圖5】第1實施形態的基板處理系統的構成概略縱剖前視圖。 【圖6】音波發射裝置的一例的俯視圖。 【圖7】音波發射裝置的其他例的側視圖。 【圖8】本發明的第1實施形態的基板處理系統的其他例的概略說明圖。 【圖9】(A)～(B)本發明的第1實施形態的基板處理系統的其他另一例的說明圖。 【圖10】(A)～(B)本發明的第2實施形態的基板處理系統的概略說明圖。 【圖11】冷卻板的其他例圖。 【圖12】本發明的第3實施形態的基板處理系統的概略說明圖。 【圖13】設於棚架單元的收納區塊的內部俯視圖。[Fig. 1] A schematic plan view of a configuration of a substrate processing system according to a first embodiment. [FIG. 2] A schematic front view of the configuration of the substrate processing system according to the first embodiment. [FIG. 3] A schematic rear view of the configuration of the substrate processing system according to the first embodiment. [Fig. 4] A schematic longitudinal sectional side view of the configuration of the substrate processing system according to the first embodiment. [Fig. 5] A schematic longitudinal sectional front view of the configuration of the substrate processing system according to the first embodiment. Fig. 6 is a plan view of an example of a sound wave transmitting device. Fig. 7 is a side view of another example of the acoustic wave transmitting device. 8 is a schematic explanatory diagram of another example of the substrate processing system according to the first embodiment of the present invention. [Fig. 9] (A) to (B) An explanatory diagram of another example of the substrate processing system according to the first embodiment of the present invention. [Fig. 10] (A) to (B) A schematic explanatory diagram of a substrate processing system according to a second embodiment of the present invention. [Fig. 11] Another example of a cooling plate. 12 is a schematic explanatory diagram of a substrate processing system according to a third embodiment of the present invention. FIG. 13 is an internal plan view of a storage block provided in a shelf unit.
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| JP4279008B2 (en) * | 2003-02-27 | 2009-06-17 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
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