TWI641028B - 利用空間原子層沉積進行無縫間隙充填 - Google Patents

利用空間原子層沉積進行無縫間隙充填 Download PDF

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TWI641028B
TWI641028B TW104107034A TW104107034A TWI641028B TW I641028 B TWI641028 B TW I641028B TW 104107034 A TW104107034 A TW 104107034A TW 104107034 A TW104107034 A TW 104107034A TW I641028 B TWI641028 B TW I641028B
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dielectric material
plasma
layer
gas
substrate
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李寧
蓋葉維多
巴賽諾米海拉
夏立群
馬可士史帝芬Ｄ
楊海春
田中敬一
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美商應用材料股份有限公司
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Abstract

本文中揭示的實施例一般是關於在高深寬比特徵中形成介電材料。在一個實施例中，揭示一種用於在一個處理腔室中充填高深寬比溝槽的方法。所述方法包括將基板置於處理腔室內部，在所述腔室中，基板具有一表面，所述表面具有複數個高深寬比溝槽，及所述表面面向氣體/電漿分配組件。所述方法進一步包括執行以下序列：在基板表面上及複數個溝槽中的每一個內側沉積介電材料層，在此情況下，介電材料層位於每一溝槽底部及側壁上；並去除安置在基板表面上的介電材料層的一部分，在此情況下，每一溝槽的開口被擴大。重複進行所述序列，直至利用介電材料無縫充填了溝槽為止。

Description

利用空間原子層沉積進行無縫間隙充填
本文揭示的實施例一般是關於基板處理，及更具體而言是關於用於以高深寬比特徵形成介電材料的方法。
隨著積體電路上的裝置密度持續增大，裝置結構之間的尺寸與距離持續減小。結構間隙的較窄寬度和結構之間溝槽的較窄寬度增大了所述構造中的高度與寬度比率(亦即深寬比)。換句話說，積體電路元件的持續微型化正在使所述元件內和所述元件之間的水平寬度比所述元件垂直高度更快地縮小。
雖然製作具有日益增大深寬比的裝置結構的能力已容許將更多結構(例如電晶體、電容器、二極體，等等)包裝在半導體晶片基板的相同表面積上，但此舉亦產生製造問題。所述問題之一是在充填處理期間，難以在不產生空隙或縫隙的情況下完全充填這些結構中的間隙和溝槽。利用諸如氮化矽或氧化矽的介電材料充填間隙和溝槽必須使鄰近的裝置結構與彼此電隔絕。如果間隙留空，則將會有過多電雜訊 和電流洩漏，使裝置無法正常操作(或根本無法操作)。
當間隙寬度較大(及深寬比較小)時，間隙相對易於利用介電材料的快速沉積物填充。沉積材料將覆蓋間隙側面及底部，並持續從下到上進行充填，直至裂縫或溝槽得到充分充填為止。然而，隨著深寬比增至3：1或以上，將變得更難以在沒有堵塞的情況下充填深的狹窄溝槽，所述堵塞在充填體積中產生空隙或縫隙。
由此，對在具有高深寬比的間隙、溝槽，和其他裝置結構內形成介電材料的方法仍存在需求。
本文揭示的實施例一般是關於基板處理，及更具體而言是關於用於以較高深寬比特徵形成介電材料的方法。在一個實施例中，揭示一種用於充填高深寬比溝槽的方法。所述方法包括將複數個基板置於處理腔室內部，在所述腔室中，每一基板具有一表面，所述表面具有複數個高深寬比溝槽，及所述表面面向氣體/電漿分配組件。所述方法進一步包括執行以下序列：在基板表面上及複數個溝槽中的每一個內側沉積介電材料層，在此情況下，介電材料層位於每一溝槽的底部及側壁上；並去除安置在基板表面上的一部分介電材料層，在此情況下，每一溝槽的開口被加寬。所述方法進一步包括重複所述序列，直至利用介電材料無縫充填了溝槽為止，在此情況下，序列在處理腔室中執行。
30‧‧‧氣體/電漿分配組件
60‧‧‧基板
61‧‧‧表面
65‧‧‧梭子
70‧‧‧軌道
90‧‧‧加熱器
100‧‧‧處理腔室
120‧‧‧第一前體注射器
125‧‧‧氣體/電漿口
130‧‧‧第二前體注射器
135‧‧‧氣體/電漿口
140‧‧‧淨化氣體注射器
142‧‧‧第三前體注射器
144‧‧‧電漿注射器
145‧‧‧淨化氣體口
150‧‧‧泵送系統
155‧‧‧真空口
160‧‧‧分區
165‧‧‧氣體/電漿口
175‧‧‧氣體/電漿口
191‧‧‧噴淋頭
198‧‧‧箭頭
200‧‧‧轉盤處理腔室
230‧‧‧基座組件
231‧‧‧頂表面
240‧‧‧支撐軸
243‧‧‧凹槽
250‧‧‧氣體/電漿分配組件
252‧‧‧扇形區段
301‧‧‧表面
302‧‧‧氣體/電漿口
304‧‧‧淨化氣體口
306‧‧‧真空口
400‧‧‧步驟
402‧‧‧步驟
404‧‧‧步驟
406‧‧‧步驟
408‧‧‧步驟
為了能夠詳細理解上文中列舉的本發明特徵，可參 考實施對上文簡述的本發明進行更為具體的描述，述及之實施中的一些實施在附圖中進行圖示。然而，將注意，附圖僅圖示本發明的典型實施，因此附圖將不被視作限制本發明範疇，因為本發明可認可其他同等有效的實施。
圖1是根據一個實施例的處理腔室的橫剖面側視圖。
圖2是根據一個實施例的轉盤處理腔室的透視圖。
圖3是根據一個實施例的氣體/電漿分配組件中的一部分的示意性底視圖。
圖4圖示根據一個實施例的用於利用介電材料充填高深寬比特徵的處理步驟。
為了便於理解，在可能的情況下已使用相同元件符號以指定附圖中共用的相同元件。假設一個實施中揭示的元件可在無需特定詳述的情況下以有利方式用於其他實施中。
本文揭示的實施例一般是關於基板處理，及更具體而言是關於用於在高深寬比特徵中形成介電材料的方法。在一個實施例中，揭示一種用於充填高深寬比溝槽的方法。所述方法包括將基板置於處理腔室內部，在所述腔室中，基板具有一表面，所述表面具有複數個高深寬比溝槽，及所述表面面向氣體/電漿分配組件。所述方法進一步包括執行以下序列：在基板表面上及複數個溝槽中的每一個內側沉積介電材料層，在此情況下，介電材料層位於每一溝槽底部及側壁上；並去除安置在基板表面上的一部分介電材料層，在此情況下，每一溝槽的開口被擴大。所述方法進一步包括重複所述 序列，直至利用介電材料無縫充填了溝槽為止，在此情況下，在處理腔室中執行序列。
圖1是根據一個實施例的處理腔室100的橫剖面側視圖。處理腔室100能夠在一或更多個基板60上執行沉積和蝕刻處理兩者。處理腔室100包括氣體/電漿分配組件30，所述分配元件能夠在基板60的整個頂表面61分配一或更多個氣體及/或電漿。基板60可具有複數個待充填介電材料的溝槽，所述介電材料如氮化矽或氧化矽。氣體/電漿分配組件30包括複數個氣體口和複數個真空口，所述氣體口將一或更多個氣流及/或電漿傳輸至基板60，所述真空口安置在相鄰的氣體口之間以從處理腔室100傳輸出氣流。
在一個實施例中，氣體/電漿分配組件包括第一前體注射器120、第二前體注射器130、第三前體注射器142、電漿注射器144，和淨化氣體注射器140。注射器120、130、140、142、144可由諸如主機的系統電腦(未圖示)控制，或由諸如可程式設計邏輯控制器的腔室特定控制器控制。前體注射器120將化合物A的連續或脈衝式反應性前體流經由氣體口125注入處理腔室100。前體注射器130將化合物B的連續或脈衝式反應性前體流經由氣體口135注入處理腔室100。前體注射器142將化合物C的連續或脈衝式反應性前體流經由氣體口165注入處理腔室100。前體A、B、C可用以執行氮化矽、氧化矽，或其他介電材料的原子層沉積(atomic layer deposition；ALD)至形成於基板60上的溝槽內。前體A可包含矽，前體B可包含氮，且前體C可包含氧。在一個實施例中，僅有兩個前體 ，如前體A和B，或前體A和C。
電漿注射器144可將遠端電漿經由電漿/氣體口175注入處理腔室100，以在基板60上執行電漿蝕刻。電漿注射器144可將諸如NF3的蝕刻劑氣體經由電漿/氣體口175注入電漿區域185內，及電極187、189在電漿區域185中形成電場，然後在電漿區域185中產生電漿。亦可使用其他類型的電漿源來代替電極187、189以在電漿區域185中產生電漿。淨化氣體注射器140將連續的或脈衝式的非反應性氣流或淨化氣流經由複數個氣體口145注入處理腔室100。遠端電漿或在電漿區域185中形成的電漿可通過噴淋頭191。噴淋頭191可被配置以通過使或多或少的電漿到達基板60上來控制蝕刻處理的方向性。
淨化氣體從處理腔室100中去除反應性材料和反應性副產物。淨化氣體通常為惰性氣體，如氮氣、氬氣或氦氣。氣體口145可被安置在氣體口125、135、165、175之間以便分隔前驅化合物A、B、C與電漿或蝕刻劑氣體，由此避免前體與電漿/蝕刻劑氣體之間的交叉污染。
在另一方面中，在將前體注入處理腔室100內之前，遠端電漿源(未圖示)可連接到前體注射器120、前體注射器130及前體注射器142。處理腔室100進一步包括連接到處理腔室100的泵送系統150。泵送系統150可被配置以經由一或更多個真空口155將氣流排出處理腔室100。真空口155可被安置在氣體口125、135、165、175之間，以便在氣流與基板表面61反應之後，將氣流排出處理腔室100，及進一步限制前體與電 漿/蝕刻劑氣體之間的交叉污染。
處理腔室100包括複數個分區160，所述分區安置在相鄰的氣體口之間。每一分區160的下部部分延伸至基板60的表面61附近，例如，與表面61相距約0.5mm或更大距離。在此配置中，分區160的下部部分與基板表面61分隔達一距離，所述距離足以容許在氣流與基板表面61反應之後，氣流圍繞下部部分流向真空口155。箭頭198指示氣流方向。因為分區160作為氣流的物理阻擋層進行操作，因此分區160亦限制前體之間的交叉污染。複數個加熱器90可被安置在基板60下方以協助在處理腔室100中執行的一或更多個處理。
處理腔室100亦可包括梭子65與軌道70以用於穿過處理腔室100以從氣體/電漿分配組件30下方通過的形式移送基板60。在圖1中所示的實施例中，梭子65以直線路經移動穿過處理腔室100。圖2圖示一實施例，在所述實施例中，基板以圓形路徑移動穿過轉盤處理系統。
圖2是根據一個實施例的轉盤處理腔室200的透視圖。處理腔室200可包括基座組件230和氣體/電漿分配組件250。基座組件230具有頂表面231與複數個凹槽243，所述凹槽形成於頂表面231中。每一凹槽243可支撐一個基板60。在一個實施例中，基座組件230具有六個凹槽以用於支撐六個基板60。每一凹槽243經定尺寸以使被支撐在凹槽243中的基板60具有與基座組件230的頂表面231大體上共面的頂表面61。在沉積/蝕刻處理期間，或在沉積/蝕刻處理之間，基座組件230可通過支撐軸240而旋轉。
氣體/電漿分配組件250包括複數個扇形區段252。氣體/電漿分配組件250的部分被去除以圖示安置在下方的基座組件230，如圖2中所示。氣體/電漿分配組件250並非由複數個區段252形成，而是可按與基座組件230具有相同形狀地一體形成。氣體/電漿分配組件250的部分在圖3中圖示。
圖3是氣體/電漿分配組件250中的一部分的示意性底視圖。氣體/電漿分配組件250具有表面301，所述表面301面向基座組件230。複數個氣體/電漿口302可在表面301中形成。淨化氣體口304圍繞每一氣體/電漿口302，且真空口306在相鄰氣體/電漿口302之間。氣體/電漿口302可與氣體/電漿口125、135、165、175具有相同作用，淨化氣體口304可與淨化氣體口145具有相同作用，及真空口306可與真空口155具有相同作用。在一個實施例中，表面301中安置有八個氣體/電漿口302。在一個實施例中，有八個區段252，所述區段形成氣體/電漿分配組件250，每一區段具有一個氣體/電漿口302。圖3中圖示的氣體/電漿分配組件250的部分可為兩個區段252的組合。在一個實施例中，一個氣體/電漿口302用於分配電漿以執行電漿蝕刻，而剩餘七個氣體/電漿口302則用於分配前體氣體以用於將介電材料沉積至在基板60上形成的溝槽內。在另一實施例中，兩個氣體/電漿口302用於分配電漿，而剩餘六個氣體/電漿口302則用於分配前體氣體。在另一實施例中，三個氣體/電漿口302用來分配電漿，而剩餘五個氣體/電漿口302則用來分配前體氣體。在另一實施例中，四個氣體/電漿口302用來分配電漿，而剩餘四個氣體/電漿口302則用來分配前體氣體。相 同的前體氣體可進入一個以上的氣體口302，且一或更多個前體可進入一個氣體口302。
處理腔室100或200允許在處理腔室中進行沉積與蝕刻。在操作期間，基板60在所述空間分隔的出口302下方移動，並連續地將多個表面曝露於不同的化學品或電漿環境。由此，在空間ALD和表面蝕刻處理中，有可能存在薄膜逐層生長的情況。在操作期間，當基板60在一或更多個氣體口302下方旋轉時，一定厚度的氮化矽或氧化矽的第一層可沉積至溝槽內。然後，基板60旋轉，以便處於電漿口302下方，且含氟電漿去除第一層的一部分。由於溝槽內側的電漿活性成分濃度低，因此蝕刻大部分發生在溝槽頂部。換句話說，沉積在溝槽底部與側壁上的第一層不受影響。電漿蝕刻步驟使得溝槽頂部比溝槽底部開口更寬。其次，在基板60於一或更多個氣體口302下方旋轉時，另一層氮化矽或氧化矽層可沉積至溝槽內，及在基板60旋轉以便處於另一電漿出口302下方時，第二氮化矽或氧化矽層中靠近溝槽頂部的部分通過電漿蝕刻處理而被去除。可重複進行沉積與蝕刻處理，直至用氮化矽或氧化矽無縫充填溝槽。無縫意味著溝槽內側大體上沒有空隙或縫隙。
圖4圖示根據一個實施例的用於利用介電材料充填高深寬比特徵的處理步驟400。在步驟402中，複數個基板置於處理腔室內部，所述處理腔室如處理腔室100或處理腔室200。基板可置於基座組件(如梭子65或基座組件230)上，且位於氣體/電漿分配組件(如氣體/電漿分配組件30、250) 下方。在一個實施例中，有六個基板安置在基座組件上。複數個基板中的每一個具有一表面，所述表面面向氣體/電漿分配組件，及複數個高深寬比溝槽在所述表面中形成。在步驟404中，第一層介電材料沉積在所述表面與溝槽內側上。第一層可在溝槽底部與側壁上形成。在一個實施例中，第一層具有一厚度，所述厚度的範圍自約50埃至約75埃，如約50埃。第一層可為氮化矽、氧化矽，或其他介電材料，且第一層可在基板置於氣體/電漿分配組件的一或更多個氣體口下方時形成。一或更多個前體氣體可從一或更多個氣體口流出，且與基板表面反應及與彼此相互反應以形成第一層。在沉積期間，基板可通過基座組件移動；或在第一層沉積時，基板可在一或更多個氣體口中的每一個下方固定不動。
接下來，在步驟406中，安置在基板表面上的第一層的一部分被去除。由於安置在基板表面上的第一層的部分可能使溝槽具有較小開口，因此基板被移至諸如電漿口175、302的電漿出口下方的位置。含氟電漿從電漿口流出，且安置在基板表面上的第一層的一部分內腐蝕達約10%至30%，意味著安置在基板表面上的第一層厚度的10%至30%被去除。安置在溝槽底部與側壁上的第一層的部分不受影響，因為溝槽內側存在低的自由基濃度。安置在基板表面上的第一層的部分被去除，溝槽開口被擴大，從而使得溝槽易於充填。
可重複進行步驟404與406，如步驟408中所示，使得第二層沉積在第一層上和溝槽內側，及去除安置在第一層上的第二層的一部分以擴大溝槽開口，直至利用介電材料無縫 充填高深寬比溝槽為止。在一個實施例中，步驟408包括重複步驟404、406約達4次至6次，諸如6次。
儘管前述內容是針對本發明的實施的，但可在不背離本發明的基本範疇之前提下設計本發明的其他及更多實施方式，及本發明的範疇由以上申請專利範圍所決定。

Claims (19)

  1. 一種用於充填高深寬比溝槽的方法，所述方法包括以下步驟：將複數個基板置於一處理腔室內部，該等複數個基板中的每一基板包含一表面，該表面具有複數個高深寬比溝槽，及該表面面向一氣體/電漿分配組件；在該處理腔室中執行一序列，該序列包括以下步驟：使用原子層沉積在每一基板的該表面上及該等複數個溝槽的每一者的內側沉積一介電材料層，該介電材料層位於每一溝槽的一底部與側壁上；及去除安置在每一基板的該表面上的該介電材料層的一部分，每一溝槽的頂上的一開口藉由該去除步驟而被擴大，該去除步驟包括：在位於該處理腔室中在兩個電極之間的一電漿區域中形成一電漿，及從該電漿區域流動該電漿至每一基板的該表面；和重複該序列，直至利用該介電材料無縫充填了該等溝槽為止；其中去除該介電材料層的一部分包括去除約10%至30%的該介電材料層。
  2. 如請求項1所述之方法，其中該等複數個基板置於一基座組件上。
  3. 如請求項2所述之方法，其中該基座組件具有一頂表面與形成於該頂表面中的複數個凹槽，其中每一凹槽被配置以支撐該等複數個基板中之一個基板。
  4. 如請求項3所述之方法，其中該等複數個凹槽包括六個凹槽。
  5. 如請求項2所述之方法，其中該氣體/電漿分配組件包括面向該基座組件的一表面，其中複數個口在該氣體/電漿組件的該表面中形成。
  6. 如請求項5所述之方法，其中該氣體/電漿分配組件包括八個口。
  7. 如請求項1所述之方法，其中該介電材料層具有一厚度，該厚度的範圍自約50埃至約75埃。
  8. 如請求項7所述之方法，其中該介電材料層具有一約50埃的厚度。
  9. 如請求項1所述之方法，其中去除該介電材料層的一部分包括去除約10%的該介電材料層。
  10. 如請求項1所述之方法，其中該序列重複4次至6次。
  11. 如請求項10所述之方法，其中該序列重複6次。
  12. 一種用於充填高深寬比溝槽的方法，該方法包括以下步驟：將複數個基板置於一處理腔室內部，該等複數個基板中的每一基板包含一表面，該表面具有複數個高深寬比溝槽，及該表面面向一氣體/電漿分配組件；在該處理腔室中執行一序列，該序列包括以下步驟：將每一基板置於該氣體/電漿分配組件中的一第一組一或更多個口下方，以在每一基板的該表面上及該等複數個溝槽的每一個的內側形成一介電材料層，該介電材料層位於每一溝槽的一底部與側壁上，該介電材料層係使用原子層沉積來形成；及將每一基板置於該氣體/電漿分配組件中的一第二組一或更多個口下方，以去除安置在該基板的每一表面上的該介電材料層的一部分，該第二組一或更多個口不同於該第一組一或更多個口，每一溝槽的頂上的一開口藉由該去除步驟而被擴大，該去除步驟包括：在位於該處理腔室中在兩個電極之間的一電漿區域中形成一電漿，及從該電漿區域流動該電漿至每一基板的該表面；及重複該序列，直至利用該介電材料無縫充填該等溝槽為止。
  13. 如請求項12所述之方法，其中該氣體/電漿分配組件包括面向每一基板的該表面的一表面，其中該第一組一或更多個口與該第二組一或更多個口在該氣體/電漿組件的該表面中形成。
  14. 如請求項13所述之方法，其中該氣體/電漿分配組件包括八個口。
  15. 如請求項12所述之方法，其中該介電材料層具有一厚度，該厚度的範圍自約50埃至約75埃。
  16. 如請求項15所述之方法，其中該介電材料層具有一約50埃的厚度。
  17. 如請求項12所述之方法，其中去除該介電材料層的一部分包括去除約10%至30%的該介電材料層。
  18. 如請求項17所述之方法，其中去除該介電材料層的一部分包括去除約10%的該介電材料層。
  19. 如請求項12所述之方法，其中該序列重複4次至6次。
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Families Citing this family (272)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9564309B2 (en) 2013-03-14 2017-02-07 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US9824881B2 (en) 2013-03-14 2017-11-21 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9297073B2 (en) 2014-04-17 2016-03-29 Applied Materials, Inc. Accurate film thickness control in gap-fill technology
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9576792B2 (en) 2014-09-17 2017-02-21 Asm Ip Holding B.V. Deposition of SiN
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US10410857B2 (en) 2015-08-24 2019-09-10 Asm Ip Holding B.V. Formation of SiN thin films
US10550469B2 (en) * 2015-09-04 2020-02-04 Lam Research Corporation Plasma excitation for spatial atomic layer deposition (ALD) reactors
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10084040B2 (en) 2015-12-30 2018-09-25 Taiwan Semiconductor Manufacturing Co., Ltd. Seamless gap fill
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10395919B2 (en) * 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US20200211833A1 (en) * 2017-08-22 2020-07-02 Intel Corporation Seam-free silicon nitride gap-fill techniques for high aspect ratio trenches
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー．ブイ． クリーン・ミニエンバイロメントを備える装置
TWI779134B (zh) 2017-11-27 2022-10-01 荷蘭商Ａｓｍ智慧財產控股私人有限公司 用於儲存晶圓匣的儲存裝置及批爐總成
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
KR102657269B1 (ko) 2018-02-14 2024-04-16 에이에스엠 아이피 홀딩 비.브이. 주기적 증착 공정에 의해 기판 상에 루테늄-함유 막을 증착하는 방법
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11955331B2 (en) 2018-02-20 2024-04-09 Applied Materials, Inc. Method of forming silicon nitride films using microwave plasma
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US10431500B1 (en) 2018-03-27 2019-10-01 Globalfoundries Inc. Multi-step insulator formation in trenches to avoid seams in insulators
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10580645B2 (en) 2018-04-30 2020-03-03 Asm Ip Holding B.V. Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR20190128558A (ko) 2018-05-08 2019-11-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TWI819010B (zh) 2018-06-27 2023-10-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
TWI751420B (zh) 2018-06-29 2022-01-01 荷蘭商Ａｓｍ知識產權私人控股有限公司 薄膜沉積方法
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
TWI833804B (zh) * 2018-09-21 2024-03-01 美商應用材料股份有限公司 含鋁膜的間隙填充
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
JP7509548B2 (ja) 2019-02-20 2024-07-02 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための周期的堆積方法および装置
JP2020133004A (ja) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材を処理するための基材処理装置および方法
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
TW202113936A (zh) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
CN112635282A (zh) 2019-10-08 2021-04-09 Asm Ip私人控股有限公司 具有连接板的基板处理装置、基板处理方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN112992667A (zh) 2019-12-17 2021-06-18 Asm Ip私人控股有限公司 形成氮化钒层的方法和包括氮化钒层的结构
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (zh) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於生長磷摻雜矽層之方法及其系統
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202140831A (zh) 2020-04-24 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含氮化釩層及包含該層的結構之方法
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202147383A (zh) 2020-05-19 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202200837A (zh) 2020-05-22 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基材上形成薄膜之反應系統
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220006455A (ko) 2020-07-08 2022-01-17 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
KR20220081905A (ko) 2020-12-09 2022-06-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 증착용 실리콘 전구체
CN114639631A (zh) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 跳动和摆动测量固定装置
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
US20230051200A1 (en) * 2021-08-11 2023-02-16 Applied Materials, Inc. Seam-free gapfill deposition
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090286381A1 (en) * 2008-05-16 2009-11-19 Novellus Systems Inc. Protective Layer To Enable Damage Free Gap Fill
US20140023794A1 (en) * 2012-07-23 2014-01-23 Maitreyee Mahajani Method And Apparatus For Low Temperature ALD Deposition

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110090442A (ko) * 2010-02-04 2011-08-10 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090286381A1 (en) * 2008-05-16 2009-11-19 Novellus Systems Inc. Protective Layer To Enable Damage Free Gap Fill
US20140023794A1 (en) * 2012-07-23 2014-01-23 Maitreyee Mahajani Method And Apparatus For Low Temperature ALD Deposition

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